WO2022147747A9 - 移相器及天线 - Google Patents
移相器及天线 Download PDFInfo
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- WO2022147747A9 WO2022147747A9 PCT/CN2021/070799 CN2021070799W WO2022147747A9 WO 2022147747 A9 WO2022147747 A9 WO 2022147747A9 CN 2021070799 W CN2021070799 W CN 2021070799W WO 2022147747 A9 WO2022147747 A9 WO 2022147747A9
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
- H01P1/181—Phase-shifters using ferroelectric devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
- H01P1/182—Waveguide phase-shifters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
- H01P1/184—Strip line phase-shifters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/12—Hollow waveguides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
- H01Q3/34—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
- H01Q3/36—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means with variable phase-shifters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/44—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the electric or magnetic characteristics of reflecting, refracting, or diffracting devices associated with the radiating element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
- H01Q9/045—Substantially flat resonant element parallel to ground plane, e.g. patch antenna with particular feeding means
- H01Q9/0457—Substantially flat resonant element parallel to ground plane, e.g. patch antenna with particular feeding means electromagnetically coupled to the feed line
Definitions
- a phase shifter is a device used to change the phase of an electromagnetic wave signal.
- An ideal phase shifter has very small insertion loss and almost the same loss in different phase states to achieve amplitude balance.
- phase shifters such as electric control, optical control, magnetic control, and mechanical control.
- the basic function of the phase shifter is to change the transmission phase of the microwave signal by controlling the bias voltage.
- the phase shifter is divided into digital type and analog type. It is an important part of the phased array antenna. It is used to control the phase of each signal in the antenna array, so that the radiation beam can be electrically scanned; it is also commonly used in digital communication systems as a phase shifter. Modulator.
- the present disclosure aims to solve at least one of the technical problems existing in the prior art, and provides a phase shifter and an antenna.
- the reference electrode is provided with a first opening, and the length of the first opening in the first direction is not less than the line width of the transmission line.
- the extending direction of the orthographic projection of the second transmission end on the first base passes through the center of the orthographic projection of the first opening on the first base.
- the orthographic projection of the at least one meandering line on the first base has a portion intersecting the extension direction of the orthographic projection of the first transmission end on the first base.
- the ratio of the length of the first opening in the first direction to the length of the first opening in the second direction is 1.7:1 ⁇ 2.3:1;
- a second opening is further provided on the reference electrode, and the length of the second opening in the first direction is not less than the line width of the transmission line;
- the length of the second opening in the first direction is the same as the length of the first opening in the first direction
- the length of the second opening in the second direction is the same as the length of the first opening in the second direction.
- the lengths in both directions are the same.
- the orthographic projection of the second opening on the first substrate does not overlap with the orthographic projection of the transmission main part of the transmission line on the first substrate.
- the phase shifter further includes: a first waveguide structure and a second waveguide structure; the first waveguide structure is configured to transmit through the second opening and the first transmission end of the transmission line by coupling Microwave signals; the second waveguide structure is configured to transmit microwave signals through the first opening and the second transmission end of the transmission line in a coupling manner.
- the first port of the first waveguide structure is arranged on the side of the first substrate away from the first dielectric layer; the first port of the second waveguide is arranged on the side of the second substrate away from the first dielectric layer. one side of the dielectric layer;
- the extension direction of the orthographic projection of the first transmission end on the first substrate runs through the center of the orthographic projection of the first port of the first waveguide structure on the first substrate; and/or,
- the extension direction of the orthographic projection of the second transmission end on the second substrate runs through the center of the orthographic projection of the first port of the second waveguide structure on the second substrate.
- the distance between the orthographic projection of the first transmission end on the first substrate and the center of the orthographic projection of the first port of the first waveguide structure on the first substrate is smaller than a preset value; and /or,
- the distance between the orthographic projection of the second transmission end on the second substrate and the center of the orthographic projection of the first port of the second waveguide structure on the second substrate is smaller than a preset value.
- the first waveguide structure includes a rectangular waveguide structure with a cross-sectional aspect ratio of 1.7 to 2.3:1 and/or, the second waveguide structure includes a rectangular waveguide structure with a cross-sectional aspect ratio of 1.7 :1 ⁇ 2.3:1.
- the orthographic projection of the first port of the first waveguide structure on the first substrate completely overlaps the orthographic projection of the first opening on the first substrate;
- the orthographic projection of the first port of the second waveguide structure on the second substrate completely overlaps the orthographic projection of the second opening on the second substrate.
- the isolation structure is located on a side of the reference electrode close to the second substrate, and the reference electrode extends to the peripheral area and overlaps the isolation structure.
- a protective layer is formed on the inner wall of the hollow cavity of the first waveguide structure and/or the inner wall of the hollow cavity of the second waveguide structure.
- an embodiment of the present disclosure provides an antenna, which includes any one of the phase shifters described above.
- the antenna further includes a patch electrode disposed on a side of the second substrate away from the first dielectric layer, and the patch electrode overlaps with an orthographic projection of the first opening on the second substrate.
- FIG. 2 is a cross-sectional view of AA' of the phase shifter shown in FIG. 1 .
- FIG. 7 is a cross-sectional view of BB' of the phase shifter shown in FIG. 6 .
- FIG. 8 is a top view (transmission line side) of the first substrate in the phase shifter shown in FIG. 6 .
- FIG. 9 is a top view (ground electrode side) of a second substrate in the phase shifter shown in FIG. 6 .
- FIG. 10 is a schematic diagram of a first waveguide structure according to an embodiment of the present disclosure.
- FIG. 11 is a front view of the phase shifter shown in FIG. 6 .
- FIG. 16 is a measured curve of the phase shift angle and DC bias voltage of the phase shifter shown in FIG. 13 .
- FIG. 18 is a cross-sectional view of DD' of the phase shifter shown in FIG. 17 .
- FIG. 19 is a top view (transmission line side) of the first substrate in the phase shifter shown in FIG. 17 .
- Fig. 20 is a plan view (ground electrode side) of a second substrate in the phase shifter shown in Fig. 17 .
- Fig. 1 is a schematic structural diagram of a liquid crystal phase shifter according to an embodiment of the present disclosure
- Fig. 2 is a cross-sectional view of AA' of the phase shifter shown in Fig. 1 , as shown in Figs. 1 and 2, the liquid crystal phase shifter
- the device includes a first substrate and a second substrate oppositely arranged, and a liquid crystal layer 30 arranged between the first substrate and the second substrate.
- the first substrate includes a first substrate 10, a transmission line 11 and a bias line 12 arranged on the side of the first substrate 10 close to the liquid crystal layer 30, and a second wire arranged on the side of the transmission line 11 and the bias line 12 away from the first substrate 10.
- an alignment layer 13 .
- first end point and the second end point are relative concepts, if the first end point is the head end, then the second end point is the end point, and vice versa.
- first end point of the first transmission end 11a is electrically connected to the first end point of the transmission body part 11c.
- the first endpoint may be a common endpoint.
- the first end point of the second transmission end 11b is electrically connected to the second end point of the transmission body part 11c, and the first end point of the second transmission end 11b and the second end point of the transmission body part 11c have a common terminal.
- the main transmission part 11c includes but is not limited to meandering lines, and the number of meandering lines can be one or more.
- the shape of the meandering line includes, but is not limited to, a bow shape, a wave shape, and the like.
- the shapes of the meandering lines are at least partially different. That is to say, some of the meandering lines may have the same shape, or all the meandering lines may have different shapes.
- the second transmission end 11b is used as the sending end of the microwave signal; correspondingly, when the second transmission end 11b is used as the receiving end of the microwave signal, Then the first transmission end 11a is used as the sending end of the microwave signal.
- the bias line 12 is electrically connected to the transmission line 11 and is configured to load a DC bias signal to the transmission line 11 so as to form a DC steady-state electric field between the transmission line 11 and the ground electrode 21 .
- the liquid crystal molecules in the liquid crystal layer 30 are deflected due to the electric field force.
- the dielectric constant of the liquid crystal layer 30 is changed.
- the dielectric constant of the liquid crystal layer 30 changes so that the phase of the microwave signal changes accordingly.
- the magnitude of the phase change of the microwave signal is positively correlated with the deflection angle of the liquid crystal molecules and the electric field strength, that is, applying a DC bias voltage can change the phase of the microwave signal, which is the working principle of the liquid crystal phase shifter.
- Fig. 4 is the top view (ground electrode 21 side) of the second substrate in the phase shifter shown in Fig. 1; As shown in Fig. 4, there is first opening 211 on the ground electrode 21, and this first opening 211 is used as microwave signal radiation, and the length of the first opening 211 in the first direction is not less than the line width of the delay line.
- the first direction refers to the direction perpendicular to the extending direction of the second transmission end 11 b of the transmission line 11 , that is, the X direction in FIG. 4 .
- the length of the first opening 211 on the ground electrode 21 in the first direction refers to the maximum length of the first opening 211 in the X direction in FIG. 4 .
- the orthographic projection of the transmission line 11 and the ground electrode 21 on the first substrate 10 at least partially overlaps, and the second transmission end 11 b of the transmission line 11 and the first opening 211 on the ground electrode 21 on the first substrate 10
- the orthographic projections overlap at least partially.
- the microwave signal is fed into the liquid crystal phase shifter and fed out of the liquid crystal phase shifter by the transmission line 11 in the liquid crystal phase shifter and the metal microstrip on the printed circuit board (Printed Circuit Board, PCB).
- Line coupling when assembled between the PCB board and the glass substrate of the liquid crystal phase shifter in engineering practice, air gaps will be introduced due to factors such as the height of the metal microstrip line, and the height of the air gaps at different positions will also vary.
- the coupling structure is a capacitive structure, which is sensitive to the thickness of the air gap.
- a small random change in the thickness of the air gap will cause a change in the coupling efficiency, which will cause a large change in the amplitude of the microwave signal, that is, a large change in the insertion loss, as shown in Figure 5
- the maximum insertion loss is 3.7dB.
- the high-gain antenna adopts an array design, that is, the liquid crystal phase shifters are arranged in an array, the amplitude difference between each liquid crystal phase shifter will reduce the performance of the antenna (that is, the main lobe gain decreases and the side lobe increases).
- FIG. 6 is a schematic diagram of another phase shifter of an embodiment of the present disclosure
- FIG. 7 is BB' of the phase shifter shown in FIG. 6
- Figure 8 is a top view (transmission line side) of the first substrate in the phase shifter shown in Figure 6
- Figure 9 is a top view (ground electrode side) of the second substrate in the phase shifter shown in Figure 6
- the phase shifter has a microwave transmission region and a peripheral region surrounding the microwave transmission region.
- the first waveguide structure 60 is configured to transmit microwave signals by coupling with the first transmission end 11a of the transmission line 11; The two transmission ends 11b transmit microwave signals in a coupling manner.
- the first waveguide structure 60 transmits the microwave signal to the first transmission end 11a of the transmission line 11 through coupling, At this time, the microwave signal is transmitted between the transmission line 11 and the ground electrode 21, and since the bias line 12 is loaded with a DC bias voltage, a DC steady-state electric field is formed between the transmission line 11 and the ground electrode 21 at this time, so that the liquid crystal molecules deflection, the dielectric constant of the liquid crystal layer 30 changes, so that the microwave signal is transmitted between the transmission line 11 and the ground electrode 21, the phase of the microwave signal will change accordingly due to the change of the dielectric constant of the liquid crystal layer 30.
- the microwave signal is phase-shifted, it is coupled to the second waveguide structure 70 via the second transmission end 11 b of the transmission line 11 through the first opening 211 on the ground electrode 21 , and the phase-shifted microwave signal is radiated out of the phase shifter.
- the ratio of the length of the first opening 211 on the ground electrode 21 in the X direction to the length of the first opening in the Y direction is 1.7:1 ⁇ 2.3:1.
- the length of the first opening 211 in the X direction and the length in the Y direction can also be based on the line width of the first transmission end 11a of the transmission line 11 and the first port of the first waveguide structure 60 connected to the first substrate. The size is specified.
- the phase shifter also includes a first wiring board and a second wiring board; wherein, the first wiring board is bound and connected to the first substrate, and is configured to connect to the bias line 12 Provides DC bias voltage.
- the second wiring board is bonded to the second substrate and is configured to provide a ground signal to the ground electrode 21.
- Both the first wiring board and the second wiring board may include various types of wiring boards, such as flexible printed circuit boards (Flexible Printed Circuit, FPC) or printed circuit boards (Printed Circuit Board, PCB), etc., which are not limited here.
- FPC Flexible Printed Circuit
- PCB printed circuit boards
- the microwave signal is fed into between the transmission line 11 and the ground electrode 21 through the first waveguide structure 60 for phase shifting, and the phase-shifted microwave signal is radiated out of the phase shifter through the second waveguide structure 70 , that is, the first waveguide structure 60 and the second waveguide structure 70 are used as the feed structure of the phase shifter, and since the first waveguide structure 60 and the second waveguide structure 70 are usually metal hollow structures, in the process of assembling with the phase shifter It is not easy to generate an air gap, so the coupling efficiency of the microwave signal can be effectively improved.
- the phase shifter in the embodiment of the present disclosure is applied to the liquid crystal phased array antenna, the consistency of the amplitude between the channels of the antenna can be improved. performance, reducing insertion loss.
- the first waveguide structure 60 and the second waveguide structure 70 can be made of hollow metal walls.
- the first waveguide structure 60 can have at least one first side wall, and at least one first side wall is connected to form a second waveguide structure.
- the waveguide cavity of the first waveguide structure 60 , and/or, the second waveguide structure 70 has at least one second side wall, and the at least one second side wall is connected to form the waveguide cavity of the second waveguide structure 70 .
- the first waveguide structure 60 has only one first sidewall
- the first waveguide structure 60 is a circular waveguide structure, and the first sidewall surrounds a circular hollow pipe to form a waveguide cavity of the first waveguide structure 60 .
- the first waveguide structure 60 may also include multiple first side walls to form waveguide cavities of various shapes.
- FIG. 10 is a schematic diagram of a first waveguide structure 60 according to an embodiment of the present disclosure.
- the first waveguide structure 60 may be Including four side walls are respectively the first side wall 60a, the second side wall 60b, the third side wall 60c and the fourth side wall 60d, the first side wall 60a is set opposite to the second side wall 60b, and the third side wall 60c Set opposite to the fourth side wall 60d, the four side walls are connected to surround a rectangular waveguide cavity 601, so the first waveguide structure 60 is a rectangular waveguide.
- the structure of the second waveguide structure 70 is the same as that of the first waveguide structure 60. If the second waveguide structure 70 has only one sidewall, the second waveguide structure 70 is a circular waveguide structure. If the second waveguide structure 70 includes multiple sidewalls, A plurality of sidewalls encloses a correspondingly shaped second waveguide structure 70 .
- the first waveguide structure 60 and the second waveguide structure 70 are rectangular waveguides as an example for illustration, which is not limited here.
- the length ratio of their respective cross-sectional areas can be in the range of 1.7-2.3:1, for example: the aspect ratio of the rectangular waveguide is 2 :1, the length of the Ku waveguide is about 12mm-19mm.
- the thickness of the first sidewall of the first waveguide structure 60 may be 4 to 6 times the skin depth of the microwave signal transmitted by the phase shifter; the thickness of the second sidewall of the second waveguide structure 70 may be 4 to 6 times the skin depth of the microwave signal transmitted by the phase shifter is not limited here.
- a protective layer is formed on the inner wall of the hollow structure (eg, waveguide cavity 601 ) of the first waveguide structure 60 and/or the second waveguide structure 70 .
- a thin gold layer is formed on the inner wall of the hollow structure by an electroplating process as a protective layer to prevent the inner wall of the hollow structure from being oxidized.
- the filling medium is a medium with a high dielectric constant to reduce the size of the waveguide structure.
- the filling medium includes but not limited to polytetrafluoroethylene, ceramics, and of course, the filling medium can also be air.
- FIG. 11 is a front view of the phase shifter shown in FIG. 6 ; the size and shape of the first waveguide structure 60 and the second waveguide structure 70 may be the same. In this case, the input and output coupling efficiencies of microwave signals can be kept consistent. Of course, in some examples, at least one of the size and shape of the first waveguide structure 60 and the second waveguide structure 70 may also be different.
- the first port of the first waveguide structure 60 is fixed on the side of the first substrate 10 away from the liquid crystal layer 30, and the first port of the first waveguide structure 60 and the first transmission end 11a of the transmission line 11 are at the first
- the orthographic projections on the substrate 10 overlap, so that the microwave signal can be transmitted by coupling between the first waveguide structure 60 and the first transmission end 11a of the transmission line 11; and/or, the first port of the second waveguide structure 70 fixed on the side of the first substrate 10 away from the liquid crystal layer 30, and the first port of the second waveguide structure 70, the first opening 211 on the ground electrode 21 and the second transmission end 11b of the transmission line 11 on the second substrate 20
- the orthographic projections there is overlap in the orthographic projections, so that microwave signals can be transmitted between the second waveguide structure 70 and the second transmission end 11 b of the transmission line 11 in a coupling manner.
- the first port of the second waveguide structure 70 can completely overlap the first opening 211 on the ground electrode 21 , so as to transmit the microwave signal accurately.
- the first port of the second waveguide structure 70 may also be an orthographic projection on the second substrate 20, covering the orthographic projection of the first opening 211 on the ground electrode 21 on the second substrate 20, In this case, the area of the first opening 211 on the ground electrode 21 is smaller than the area of the first port of the second waveguide structure 70 .
- the extension direction of the orthographic projection of the first transmission end 11 a of the delay line on the first substrate 10 runs through the orthographic projection of the first port of the first waveguide structure 60 on the first substrate 10 center of.
- the first transmission end 11 a of the delay line extends in the Y direction and runs through the center of the first port of the first waveguide structure 60 .
- the center of the first port of the first waveguide structure 60 refers to the intersection of two diagonal lines of the first port.
- the center of the first port of the first waveguide structure 60 refers to the center of the circle of the first port.
- the orthographic projection of the second transmission end 11b of the delay line on the second substrate 20 is inserted into the first port of the second waveguide structure 70, so that the microwave signal passes through the first port of the delay line.
- the two transmission ends 11b are coupled to the second waveguide structure 70 to radiate the microwave signal out of the phase shifter.
- the distance between the orthographic projection of the first transmission end 11a of the delay line on the first substrate 10 and the center of the orthographic projection of the first port of the first waveguide structure 60 on the first substrate 10 is less than a preset Set value, the default value is 2.5mm.
- the distance between the orthographic projection of the first transmission end 11a on the first substrate 10 and the center of the orthographic projection of the first port of the first waveguide structure 60 on the first substrate 10 is 0; that is, the first transmission The orthographic projection of the end point of the end 11 a on the first substrate 10 is located at the center of the orthographic projection of the first port of the first waveguide structure 60 on the first substrate 10 .
- the reason for this setting is that in this case, the coupling efficiency between the first waveguide structure 60 and the delay line is the highest, and the insertion loss of the microwave signal is the smallest.
- the distance between the orthographic projection of the second transmission end 11b of the delay line on the second substrate 20 and the center of the orthographic projection of the first port of the second waveguide structure 70 on the second substrate 20 is also smaller than the preset The value is 2.5mm.
- the distance between the orthographic projection of the second transmission end 11b on the second substrate 20 and the center of the orthographic projection of the first port of the second waveguide structure 70 on the second substrate 20 is 0; that is, The orthographic projection of the second transmission end 11 b on the second substrate 20 coincides with the center of the orthographic projection of the first port of the second waveguide structure 70 on the second substrate 20 .
- the reason for this setting is that in this case, the coupling efficiency between the second waveguide structure 70 and the delay line is the highest, and the insertion loss of the microwave signal is the smallest.
- this embodiment further includes a signal connector, one end of the signal connector is connected to an external signal line, and the other end is connected to the second port of the first waveguide structure 60, and a microwave signal is input to the first waveguide structure 60, and the first waveguide
- the structure 60 then couples the microwave signal to the transmission line 11
- the signal connectors can be various types of connectors, such as SMA connectors, etc., which are not limited here.
- the phase shifter in the embodiment of the present disclosure may further include a third substrate, and the third substrate is connected to the second port of the first waveguide structure 60 .
- the third substrate includes a third substrate and a feeding transmission line 11, the third substrate is connected to the second port of the first waveguide structure 60, the feeding transmission line 11 is arranged on the side of the third substrate close to the first waveguide structure 60, the feeding transmission line
- the first end of 11 extends to the edge of the third base to connect to the external signal line, specifically, the signal connector can be arranged on the edge of the third base, one end is connected to the feeder transmission line 11, and the other end is connected to the external signal line to feed the feeder
- the electrical transmission line 11 inputs signals.
- the second end of the feeding transmission line 11 extends to the second port of the first waveguide structure 60, so as to feed the signal into the waveguide cavity of the first waveguide structure 60, and the first waveguide structure 60 sends the signal through its first port Coupled to the first feed structure.
- the second end of the feeding transmission line 11 may extend into the second port of the first waveguide structure 60, that is, the orthographic projection of the second end of the feeding transmission line 11 on the first substrate 10 is located at the first The second port of the waveguide structure 60 is in orthographic projection on the first substrate 10 .
- FIG. 13 is a schematic diagram of another phase shifter according to an embodiment of the present disclosure
- FIG. 14 is a cross-sectional view of CC' of the phase shifter shown in FIG. 13
- FIG. 15 is a cross-sectional view of the phase shifter shown in FIG.
- the isolation structure 80 is provided to prevent external radio frequency signals from interfering with microwave signals transmitted in the microwave transmission area.
- Fig. 16 is the phase shift angle and DC bias measured curve of the phase shifter shown in Fig. 13; A phase shift angle greater than 360° is realized, so the phase shifter of the embodiments of the present disclosure meets the requirements of the phased array antenna.
- the isolation structure 80 can be made of a high-resistance material, which includes but is not limited to indium tin oxide (ITO), nickel (Ni), nitrogen Any one of tantalum oxide (TaN), chromium (Cr), indium oxide (In 2 O 3 ), and tin oxide (Sn 2 O 3 ).
- ITO material is used.
- the thickness of the isolation structure 80 is about 30nm-2000nm, and the width is about 0.1mm-5mm. The specific thickness and width of the isolation structure 80 can be set according to the size of the phase shifter and the size of the ground electrode 21.
- the isolation structure 80 adopts a closed-loop structure, the isolation structure 80 is located on the side of the ground electrode 21 away from the liquid crystal layer 30, and the ground electrode 21 overlaps with the isolation structure 80, that is, the isolation structure 80 and The ground electrodes 21 are shorted together.
- the outline of the ground electrode 21 is a rectangle, which has successively connecting the first side, the second side, the third side, and the fourth side.
- a slot 212 is formed on any one of (top), third side (right), and fourth side (bottom). In FIG. 15 , the slot 212 is formed on the third side as an example.
- the ground electrode 21 is made of a metal material, such as any one of copper, aluminum, gold, and silver.
- the thickness of the ground electrode 21 is about 0.1 ⁇ m-100 ⁇ m. Parameters such as the specific material and thickness of the ground electrode 21 can be specifically set according to the size and performance requirements of the phase shifter.
- the phase shifter not only includes the above structure, but also includes structures such as a support structure 40 and a sealant 50; wherein the sealant 50 is disposed between the first substrate and the second substrate, and is located in the peripheral area , and surround the microwave transmission area, used to seal the liquid crystal cell of the phase shifter; the support structure 40 is arranged between the first substrate and the second substrate, and its number can be multiple, and each support structure 40 is arranged at intervals in the microwave The transfer area is used to maintain the cell thickness of the liquid crystal cell.
- structures such as a support structure 40 and a sealant 50
- the sealant 50 is disposed between the first substrate and the second substrate, and is located in the peripheral area , and surround the microwave transmission area, used to seal the liquid crystal cell of the phase shifter
- the support structure 40 is arranged between the first substrate and the second substrate, and its number can be multiple, and each support structure 40 is arranged at intervals in the microwave The transfer area is used to maintain the cell thickness of the liquid crystal cell.
- the support structure 40 in the embodiments of the present disclosure can be made of organic materials and has a certain degree of elasticity, so as to prevent the first substrate 10 from being damaged by an external force when the phase shifter is squeezed. And the second substrate 20 has a problem of breakage. Further, appropriate spherical particles can be added to the support structure 40, and the stability of the support structure 40 when maintaining the thickness of the box is ensured by the spherical particles.
- the bias line 12 is made of a high-resistance material.
- the electric field formed by it and the ground electrode 21 is only used to drive the liquid crystal molecules in the liquid crystal layer 30 to deflect.
- the microwave signal transmitted by the phase shifter it is equivalent to an open circuit, that is, the microwave signal is only transmitted along the transmission line 11 .
- the conductivity of the bias line 1224 is less than 14500000 siemens/m (Siemens/meter), and it is better to select the bias line 12 with a lower conductivity value according to the size of the phase shifter.
- the material of the bias line 12 includes, but is not limited to, indium tin oxide (ITO), nickel (Ni), tantalum nitride (TaN), chromium (Cr), indium oxide (In 2 O 3 ), tin oxide Any one of (Sn 2 O 3 ).
- the bias line 12 is made of ITO material.
- the transmission line 11 is made of a metal material, and the specific material of the transmission line 11 is made of metals such as aluminum, silver, gold, chromium, molybdenum, nickel, or iron.
- the line spacing of the transmission line 11 refers to a point having a normal on the transmission line 11 and an intersection point between the normal line and other parts of the transmission line 11, the distance from this point to the nearest one of the intersection points of its normal line and other parts of the transmission line 11, That is, d1 as shown in FIG. 8 represents the line spacing of the transmission line 11 .
- the line width of the transmission line 11 is about 100 ⁇ m-3000 ⁇ m
- the line spacing of the transmission line 11 is about 100 ⁇ m-2 mm
- the thickness of the transmission line 11 is about 0.1 ⁇ m-100 ⁇ m.
- the transmission line 11 is a delay line, and the corner of the delay line is not equal to 90°, so as to prevent the microwave signal from being reflected at the corner of the delay line to cause loss of the microwave signal.
- the first base 10 can be made of various materials.
- the material of the first base 10 can include polyethylene terephthalate (polyethylene glycol terephthalate). , PET) and polyimide (Polyimide, PI), if the first substrate 1011 is a rigid substrate, the material of the first substrate 10 may also be glass or the like.
- the thickness of the first substrate 10 may be about 0.1mm-1.5mm.
- the second base 20 can also be made of various materials.
- the thickness of the liquid crystal layer 30 is about 1 ⁇ m-1 mm.
- the thickness of the liquid crystal layer 30 can be specifically set according to the requirements of the size of the phase shifter and the phase shift angle.
- the liquid crystal layer 30 in the embodiment of the present disclosure is made of a microwave liquid crystal material.
- the liquid crystal molecules in the liquid crystal layer 30 are positive liquid crystal molecules or negative liquid crystal molecules. The angle between them is greater than 0° and less than or equal to 45°.
- the included angle between the long axis direction of the liquid crystal molecules and the second electrode in the specific embodiment of the present disclosure is greater than 45° and less than 90°, which ensures that after the liquid crystal molecules are deflected, the medium of the liquid crystal layer 30 can be changed. Electric constant, in order to achieve the purpose of phase shifting.
- both the first alignment layer 13 and the second alignment layer can be made of polyimide materials.
- the thickness of the first alignment layer 13 and the second alignment layer is about 30 nm-2 ⁇ m.
- FIG. 17 is a schematic diagram of another phase shifter according to an embodiment of the present disclosure
- FIG. 18 is a sectional view of DD' of the phase shifter shown in FIG. 17
- FIG. 19 is a sectional view of the phase shifter shown in FIG. 17
- FIG. 20 is a top view (ground electrode side) of the second substrate in the phase shifter shown in FIG. 17; shown in FIGS. 17-20, the phase shifter Not only the first substrate, the second substrate, the first waveguide structure 60 and the second waveguide structure 70 mentioned above are included, but also the first reflective structure 90 and the second reflective structure 100 are included.
- the ground electrode 21 on the second substrate not only includes the first opening 211 but also includes the second opening 213, the length of the second opening 213 in the X direction is not less than the line width of the transmission line 11, and The second opening 213 does not overlap with the orthographic projection of the first opening 211 on the first substrate 10 .
- the orthographic projection of the first transmission end 11a of the transmission line 11 on the first substrate 10 at least partially overlaps the orthographic projection of the second opening 213 on the first substrate 10, and the first transmission end 11a is on the first substrate
- the extending direction of the orthographic projection on 10 runs through the center of the orthographic projection of the second opening 213 on the first substrate 10 .
- the first reflective structure 90 may adopt a waveguide structure, the waveguide cavity of the first reflective structure 90 has a first port and a second port, and the first port of the first reflective structure 90 faces the first port of the second waveguide structure.
- the reflective structure 100 can also adopt a waveguide structure, the waveguide cavity of the second reflective structure 100 has a first port and a second port, the first port of the second reflective structure 100 is facing the first port of the first waveguide structure 60, then the second The orthographic projection of the first port of the two reflective structures 100 on the second substrate 20 at least partially or completely overlaps the orthographic projection of the first port of the first waveguide structure 60 on the second substrate 20 .
- the first port of the first reflective structure 90 may also cover the first substrate, and the first port of the second reflective structure 100 may also cover the second substrate, that is, The pair of first reflective structure 90 and second reflective structure 100 may define a phase shifter therein.
- the orthographic projection of the first port of the first reflective structure 90 on the second substrate 20 covers the orthographic projection of the second opening 213 of the ground electrode 21 on the second substrate 20, and the first port of the second reflective structure 100
- the orthographic projection of the port on the first substrate 10 covers the orthographic projection of the first opening 211 of the ground electrode 21 on the first substrate 10 within the protection scope of the embodiments of the present disclosure.
- the size of the first opening 211 of the ground electrode 21 is consistent with that of the second opening 213, that is, the length of the first opening 211 in the X direction is equal to the length of the second opening 213 in the X direction, and the first opening 211 The length in the Y direction is equal to the length of the second opening 213 in the Y direction.
- the second opening 213 of the ground electrode completely coincides with the orthographic projection of the first port of the first waveguide structure 60 on the first substrate 10 . It should be noted that, as long as the orthographic projection of the first port of the second waveguide structure 70 on the first substrate 10 can cover the orthographic projection of the second opening 211 of the ground electrode 21 on the first substrate 10, all the orthographic projections of the second opening 211 of the ground electrode 21 on the first substrate 10 are included in the embodiments of the present disclosure. Within the protection range, in order to reduce the insertion loss of the microwave signal.
- the orthographic projection of the second opening 213 of the ground electrode 21 on the first substrate 10 is the same as the at least one meandering line on the first substrate 10
- the orthographic projection of the second opening 213 of the ground electrode 21 on the first substrate 10 does not overlap with the projections of each meandering line on the first substrate 10 .
- an embodiment of the present disclosure provides a method for manufacturing a phase shifter, and the method can manufacture the above-mentioned phase shifter.
- the method includes the following steps.
- step S1 specifically includes the following steps.
- the first substrate is cleaned and dried, and the first high-resistance material layer is deposited on the first substrate by magnetron sputtering, for example, a layer of ITO material is coated, and the first high-resistance material layer is processed.
- magnetron sputtering for example, a layer of ITO material is coated, and the first high-resistance material layer is processed.
- an image including bias lines is formed.
- a pattern including transmission lines is formed through a patterning process.
- the first substrate on which the transmission line is formed is cleaned and dried, and printed with PI liquid, then heated to evaporate the solvent, thermally cured, and rubbed or photo-aligned to form the first alignment layer.
- a pattern including a support structure is formed through a patterning process.
- a glue layer is formed on the side of the first alignment layer away from the first substrate by means of spin coating or spray coating, followed by pre-baking, exposure, development, and post-baking to form a pattern including a support structure.
- spherical particles can also be sprayed in the glue layer.
- step S2 specifically includes the following steps.
- a pattern including a ground electrode is formed through a patterning process.
- the second substrate forming the isolation structure is cleaned and dried, and a second metal material layer is deposited on the layer where the isolation structure is located away from the first substrate by means of magnetron sputtering, such as coating a layer of aluminum material, After glue coating, pre-baking, exposure, development, post-baking, dry or wet etching are performed on the material layer of the second metal layer, an image including the ground electrode is formed.
- the second substrate on which the ground electrode is formed is cleaned and dried, and printed with PI liquid, then heated to evaporate the solvent, thermally cured, and rubbed or photo-aligned to form the second alignment layer.
- step S3 may specifically include the following steps.
- the first substrate formed with the sealant and the second substrate formed with the liquid crystal layer are transported to a vacuum to align and vacuum-press the cell cavity, and then cured by ultraviolet and heat to form a liquid crystal cell.
- step S3 can not only be implemented by using the above-mentioned S31 and S32.
- Step S3 may also be implemented in the following manner.
- the prepared first substrate and the second substrate are boxed together, and a certain space is supported between the first substrate and the second substrate with a sealant to form a liquid crystal layer, and a filling hole is reserved on the sealant.
- the liquid crystal molecules are poured into the gap between the first substrate and the second substrate through the filling port to form a liquid crystal layer, and then the filling port is sealed to form a liquid crystal cell.
- step S4 may specifically include: using numerically controlled machining (CNC) to perform machining on an ingot of metal copper or aluminum to obtain a hollow waveguide structure, that is, to form the first waveguide structure and the second waveguide structure. waveguide structure. Then, the inner walls of the first waveguide structure and the second waveguide structure can be electroplated with a thin gold layer to prevent oxidation, that is, a protective layer is formed on the inner walls of the first waveguide structure and the second waveguide structure. Finally, the formed first waveguide structure is fixed on the side of the first substrate away from the liquid crystal layer, and the formed second waveguide structure is fixed on the side of the second substrate away from the liquid crystal layer.
- CNC numerically controlled machining
- an embodiment of the present disclosure provides an antenna, and the antenna may be a receiving antenna or a transmitting antenna.
- multiple antennas are arranged in an array to form a phased array antenna.
- each antenna it feeds the microwave signal between the transmission line and the ground electrode through the first waveguide structure for phase shifting, and radiates the phase-shifted microwave signal out of the phase shifter through the second waveguide structure, that is, adopts the first
- the first waveguide structure and the second waveguide structure are used as the feed structure of the phase shifter, and since the first waveguide structure and the second waveguide structure are usually metal hollow structures, it is not easy to generate an air gap during the assembly process with the phase shifter, so it can be effectively
- the coupling efficiency of the microwave signal can be improved, and at the same time, when the phase shifter in the embodiment of the present disclosure is applied to the liquid crystal phased array antenna, the consistency of the amplitude between the channels of the antenna can be improved, and the insertion loss can be reduced.
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
Description
Claims (25)
- 一种移相器,其包括相对设置的第一基板和第二基板,以及设置在第一基板和第二基板之间的第一介质层;所述第一基板包括:第一基底,设置在第一基底靠近所述第一介质层一侧的传输线;所述第二基板包括:第二基底,设置在第二基底靠近第一介质层一侧的参考电极,且所述参考电极与所述传输线在所述第一基底上的正投影至少部分重叠;其中,所述参考电极上设置有第一开口,且所述第一开口在第一方向的长度不小于所述传输线的线宽。
- 根据权利要求1所述的移相器,其中,所述传输线具有第一传输端、第二传输端和传输主体部;其中,所述第一传输端和所述第二传输端均具有相对设置的第一端点和第二端点;所述第一传输端的第一端点和所述第二传输端的第一端点分别连接在所述传输主体部的两相对端;且由所述第一传输端的第一端点指向其第二端点的方向与由所述第二传输端的第一端点指向其第二端点的方向相同。
- 根据权利要求2所述的移相器,其中,所述第二传输端在所述第一基底上的正投影的延伸方向贯穿所述第一开口在所述第一基底的正投影的中心。
- 根据权利要求2所述的移相器,其中,所述传输主体部包括,与所述第一传输端和所述第二传输端电连接的至少一条蜿蜒线;所述至少一条蜿蜒线在所述第一基底上的正投影具有与所述第一传输端在所述第一基底上的正投影的延伸方向相交的部分。
- 根据权利要求4所述的移相器,其中,所述蜿蜒线为多条,且多条所述蜿蜒线中至少部分形状不同。
- 根据权利要求4所述的移相器,其中,所述第一开口在所述第一基底上的正投影与所述至少一条蜿蜒线在所述第一基底上的正投影无交叠。
- 根据权利要求1所述的移相器,其中,所述第一开口在所述第一方向的长度与所述第一开口在第二方向的长度比为1.7:1~2.3:1;所述第一方向与所述第二方向垂直设置。
- 根据权利要求1所述的移相器,其中,所述参考电极上还设置有第二开口,且所述第二开口在所述第一方向的长度不小于所述传输线的线宽;所述第二开口在所述第一基底上的正投影与所述第一开口在所述第一基底上的正投影无交叠。
- 根据权利要求8所述的移相器,其中,所述第一传输端在所述第一基底上的正投影与所述第二开口在所述第一基底上的正投影至少部分重叠;所述第一传输端在所述第一基底上的正投影的延伸方向贯穿所述第二开口在所述第一基底的正投影的中心。
- 根据权利要求9所述的移相器,其中,所述第二开口在所述第一方向的长度与所述第一开口在第一方向的长度相同,所述第二开口在所述第二方向的长度与所述第一开口在第二方向的长度相同。
- 根据权利要求10所述的移相器,其中,所述第二开口在所述第一基底上的正投影与所述传输线的传输主体部在所述第一基底上的正投影无交叠。
- 根据权利要求11所述移相器,其中,所述移相器还包括:第一波导结构和第二波导结构;所述第一波导结构被配置为,通过所述 第二开口与所述传输线的第一传输端采用耦合的方式传输微波信号;所述第二波导结构被配置为,通过所述第一开口与所述传输线的第二传输端采用耦合的方式传输微波信号。
- 根据权利要求12所述的移相器,其中,所述第一波导结构的第一端口设置在所述第一基底背离所述第一介质层的一侧;所述第二波导的第一端口设置在所述第二基底背离所述第一介质层的一侧;所述第一传输端在所述第一基底上的正投影的延伸方向贯穿所述第一波导结构的第一端口在所述第一基底的正投影的中心;和/或,所述第二传输端在所述第二基底上的正投影的延伸方向贯穿所述第二波导结构的第一端口在所述第二基底的正投影的中心。
- 根据权利要求13所述的移相器,其中,所述第一传输端在所述第一基底上的正投影与所述第一波导结构的第一端口在所述第一基底的正投影的中心之间的距离小于预设值;和/或,所述第二传输端在所述第二基底上的正投影与所述第二波导结构的第一端口在所述第二基底的正投影的中心之间的距离小于预设值。
- 根据权利要求12-14中任一项所述的移相器,其中,所述第一波导结构包括矩形波导结构,且其横截面长宽比为1.7~2.3:1和/或,所述第二波导结构包括矩形波导结构,且其横截面长宽比为1.7:1~2.3:1。
- 根据权利要求12-14中任一项所述的移相器,其中,所述第一波导结构的第一端口在所述第一基底上的正投影与所述第一开口在所述第一基底上的正投影完全重叠;所述第二波导结构的第一端口在所述第二基底上的正投影与所述第二开口在所述第二基底上的正投影完全重叠。
- 根据权利要求1-11中任一项所述的移相器,其中,所述移相 器具有微波传输区和环绕所述微波传输区的周边区;所述第二基板还包括设置在第二基底上的隔离结构;所述隔离结构位于周边区,且环绕所述微波传输区。
- 根据权利要求17所述的移相器,其中,所述隔离结构位于所述参考电极靠近所述第二基底的一侧,且所述参考电极延伸至所述周边区并与所述隔离结构搭接。
- 根据权利要求18所述的移相器,其中,所述参考电极具有开槽,所述开槽位于所述周边区,且与所述隔离结构与所述开槽在所述第二基底上的正投影存在交叠。
- 根据权利要求1-11中任一项所述的移相器,其中,对于所述传输线上具有法线、且法线与所述传输线的其它部分具有交点的点,该点到其法线和所述传输线的其它部分的交点中最近的一者的距离为100μm-2mm。
- 根据权利要求16所述的移相器,其中,所述第一波导结构的中空腔体的内壁和/或所述第二波导结构的中空腔体的内壁形成有保护层。
- 根据权利要求21所述的移相器,其中,所述第一波导结构的中空腔体和/或所述第二波导结构的中空腔体内具有填充介质;所述填充介质包括聚四氟乙烯。
- 根据权利要求1-11中任一项所述的移相器,其中,第一介质层的材料包括液晶。
- 一种天线,其包括:权利要求1-23中任一项所述的移相器。
- 根据权利要求24所述的天线,其中,所述天线还包括设置在第二基底背离第一介质层一侧的贴片电极,且所述贴片电极与所述第 一开口在所述第二基底上的正投影存在交叠。
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EP21916803.6A EP4131637A4 (en) | 2021-01-08 | 2021-01-08 | PHASE SHIFTER AND ANTENNA |
JP2022564626A JP2024501905A (ja) | 2021-01-08 | 2021-01-08 | 位相シフター及びアンテナ |
CN202180000031.5A CN115053397B (zh) | 2021-01-08 | 2021-01-08 | 移相器及天线 |
US17/605,021 US12132244B2 (en) | 2021-01-08 | 2021-01-08 | Phase shifter and antenna |
KR1020237000955A KR20230125164A (ko) | 2021-01-08 | 2021-01-08 | 위상 시프터 및 안테나 |
PCT/CN2021/070799 WO2022147747A1 (zh) | 2021-01-08 | 2021-01-08 | 移相器及天线 |
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CN118511440A (zh) * | 2022-11-14 | 2024-08-16 | 京东方科技集团股份有限公司 | 射频装置、天线及电子设备 |
CN118843990A (zh) * | 2023-02-24 | 2024-10-25 | 北京京东方传感技术有限公司 | 天线、线阵及天线阵列 |
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EP2575211B1 (en) * | 2011-09-27 | 2014-11-05 | Technische Universität Darmstadt | Electronically steerable planar phased array antenna |
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KR102442849B1 (ko) * | 2015-09-30 | 2022-09-15 | 삼성디스플레이 주식회사 | 표시 패널, 표시 장치, 및 타일형 표시 장치 |
CN107371279A (zh) | 2016-05-12 | 2017-11-21 | 北京佰才邦技术有限公司 | 一种基站射频装置 |
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KR102685713B1 (ko) | 2017-10-19 | 2024-07-16 | 웨이퍼 엘엘씨 | 고분자 분산형/전단 정렬형 위상 변조기 장치 |
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