WO2022143144A1 - Ion source having coil structure capable of changing along with discharge cavity structure - Google Patents
Ion source having coil structure capable of changing along with discharge cavity structure Download PDFInfo
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- WO2022143144A1 WO2022143144A1 PCT/CN2021/137797 CN2021137797W WO2022143144A1 WO 2022143144 A1 WO2022143144 A1 WO 2022143144A1 CN 2021137797 W CN2021137797 W CN 2021137797W WO 2022143144 A1 WO2022143144 A1 WO 2022143144A1
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- discharge chamber
- coil
- chamber body
- ion source
- discharge
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- 239000000463 material Substances 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 230000001965 increasing effect Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 abstract description 10
- 238000009826 distribution Methods 0.000 description 11
- 238000009616 inductively coupled plasma Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
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- 239000004020 conductor Substances 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
Definitions
- the present application relates to the field of ion beam etching, in particular to an ion source whose coil structure can be changed with the discharge cavity structure.
- An ion source is a device that ionizes neutral atoms or molecules and extracts an ion beam from it. It is various types of ion accelerators, mass spectrometers, electromagnetic isotope separators, ion implanters, ion beam etching devices, and ion thrusters. And an indispensable part of equipment such as neutral beam injectors in controlled fusion devices.
- Radio Frequency Inductively Coupled Plasma (RFICP) sources can resonate in the megahertz range and can efficiently generate plasma at low gas pressures and transfer energy to the plasma efficiently. Due to its simple structure, it can generate high-density plasma The advantages of pure plasma, long service life, and good performance-price ratio, so it has developed rapidly in recent years.
- the currently used RF ICP (Inductively Coupled Plasma) sources are mainly cylindrical, as shown in Figure 1.
- RF ICP The RF coil of the source is wound around the electrically insulated quartz discharge chamber. When RF power is applied to the coil through the matching network, a radio frequency current flows through the coil, thus generating a radio frequency magnetic flux, which is axially generated inside the discharge chamber. A radio frequency electric field is induced in which the electrons are accelerated by the electric field, resulting in a plasma, and the energy of the coil is coupled into the plasma.
- the radio frequency ICP source is cylindrical
- the radio frequency power supply is loaded on the radio frequency coil
- the current mainly flows in the cavity wall of the discharge cavity and gradually decays in the skin layer, so the current in the discharge cavity
- the plasma density generally shows a trend of high on both sides and low in the middle, as shown by the solid line in Figure 2.
- the plasma density distribution in the reaction chamber will also have a saddle-shaped trend (shown by the dotted line in Figure 2). Due to the uneven plasma density distribution, the etching rate is uneven, which affects the etching uniformity. .
- Exemplary embodiments of the present application provide an ion source whose coil structure can be changed with the discharge cavity structure, and the ion source with the coil structure changing with the discharge cavity structure combines a coil-shaped ICP source with a cylindrical ICP source,
- the plasma density in the discharge chamber body can be adjusted in stages, and the etching uniformity can be improved.
- Exemplary embodiments of the present application provide an ion source whose coil structure can be changed with the structure of a discharge cavity, including an ion source cavity, a coil support, a coil and a discharge cavity body that are coaxially arranged in sequence from outside to inside.
- the discharge chamber body includes a discharge chamber top, a discharge chamber middle and a discharge chamber bottom which are connected in sequence.
- the top of the discharge chamber is a hollow ring and is located on the plasma outlet side.
- the bottom of the discharge chamber is a disc with an air inlet hole in the center. Among them, the air inlet hole is used to introduce the gas to be ionized.
- the center of the hollow ring and the center of the disk are both located on the central axis of the discharge chamber body.
- the middle part of the discharge chamber includes an upper end straight tube and a lower end dome tube which are connected in sequence.
- the top of the upper straight cylinder is connected with the top of the discharge chamber in sequence, and the bottom of the lower Dome-shaped cylinder is connected with the outer edge of the bottom of the discharge chamber in sequence.
- the outer ring supported by the coil is installed on the inner wall surface of the ion source cavity, and the shape of the inner wall surface supported by the coil is the same as the shape of the body of the discharge chamber.
- the coil is installed in the coil support, and the two ends of the coil are respectively connected with the radio frequency source.
- Coils include cylindrical helical coils and Dome-type coils.
- the position of the cylindrical helical coil corresponds to the position of the upper end straight cylinder, and the position of the Dome type coil corresponds to the position of the lower end Dome type cylinder.
- the distances from each layer of coils to the outer wall of the discharge chamber body are equal.
- the wall thickness of the discharge chamber body ranges from 2 mm to 20 mm.
- the material of the discharge chamber body is quartz or ceramic.
- the distance between each layer of coils and the outer wall surface of the discharge chamber body ranges from 2 mm to 30 mm.
- the distance between each layer of coils and the outer wall surface of the discharge chamber body ranges from 0 mm to 30 mm.
- the wall thickness of the discharge chamber body is H
- the distance from each layer of coils to the outer wall of the discharge chamber body is L
- H and L are determined according to the required plasma density in the discharge chamber body.
- the values of H and L are chosen to be small when the desired plasma density within the discharge chamber body is high. Larger values of H and L are chosen when the desired plasma density within the discharge vessel body is low.
- the plasma density in the discharge chamber body is adjusted by adjusting the distance L from each layer of coils to the outer wall surface of the discharge chamber body.
- the wall thickness H of the discharge chamber body is relatively large, by reducing L, the plasma density in the discharge chamber body can be made uniform.
- the wall thickness H of the discharge chamber body is small, by increasing L, the plasma density in the discharge chamber body can be made uniform.
- a uniform air plate is coaxially installed on the inner wall surface of the bottom of the discharge chamber, and the air uniform plate has a uniform air cavity communicated with the air inlet hole.
- the inner wall surface of the coil support is provided with a notch for installing the coil.
- the coil is formed by 3D printing.
- a coil-shaped inductively coupled plasma (Inductive Coupled Plasma, ICP) source is combined with a cylindrical ICP source, which can adjust the plasma density in sections and improve the etching uniformity.
- ICP Inductive Coupled Plasma
- the plasma ionization is performed by the Dome-type coil; the Dome-type coil can be decomposed into an axial helical coil and a radial coil-shaped plane coil; wherein, the helical coil can make the discharge chamber
- the radio frequency electric field is induced along the axial direction, while the coil-shaped planar coil induces the radio frequency electric field in the radial direction in the discharge chamber, so that the plasma density distribution in the entire discharge chamber is uniform and the etching uniformity is ensured.
- FIG. 1 shows a schematic diagram of the structure of the coil and the discharge chamber of the ion source in the prior art.
- FIG. 2 shows a schematic diagram of the plasma density distribution in the discharge chamber of the ion source in the prior art.
- FIG. 3 shows a schematic diagram of an ion source in which the coil structure can be changed with the discharge cavity structure according to an embodiment of the present application.
- FIG. 4 shows a schematic structural diagram of a discharge chamber according to an embodiment of the present application.
- FIG. 5 shows a schematic structural diagram of a coil support according to an embodiment of the present application.
- FIG. 6 shows a schematic structural diagram of a coil according to an embodiment of the present application.
- FIG. 7 shows a schematic diagram of manufacturing a coil using a coil tool according to an embodiment of the present application.
- Radio frequency column 51 ⁇ 52. Radio frequency column; 61 ⁇ 62. Conductor; 7. Air distribution plate; 10. Grid assembly.
- an embodiment of the present application proposes an ion source whose coil structure can be changed with the discharge cavity structure, including an ion source cavity, a coil support 3 , a coil 2 and a discharge cavity that are coaxially arranged from outside to inside.
- Body 1 an ion source whose coil structure can be changed with the discharge cavity structure, including an ion source cavity, a coil support 3 , a coil 2 and a discharge cavity that are coaxially arranged from outside to inside.
- the discharge chamber body 1 includes a discharge chamber top 11 , a discharge chamber middle 12 and a discharge chamber bottom 13 which are connected in sequence.
- the top 11 of the discharge chamber, the middle part 12 of the discharge chamber and the bottom 13 of the discharge chamber can be formed by fusion welding, and can also be integrally formed.
- the top of the discharge chamber is a hollow ring and is located on the plasma outlet side, that is, close to the grid assembly 10 of the ion source.
- the grid assembly 10 includes a screen grid, an acceleration grid, and the like.
- the bottom 13 of the discharge chamber is a disk with an air inlet 131 in the center.
- the center of the hollow ring and the center of the disk are both located on the central axis of the discharge chamber body 1 .
- the above-mentioned gas inlet holes are used to introduce gas to be ionized, such as argon (Ar) and the like.
- the outer circumference of the air inlet hole 131 may also be provided with a gas-distribution plate installation hole 132 for coaxially installing the gas-distribution plate 7 on the inner wall surface of the bottom 13 of the discharge cavity. cavity.
- the setting of the air distribution plate 7 can make the air intake uniform.
- the diameter of the bottom 13 of the discharge chamber should be more than 5 mm larger than the outer diameter of the gas-distributing plate 7 , and should not exceed the maximum inner diameter of the body 1 of the discharge chamber.
- the middle part of the discharge chamber includes an upper end straight cylinder 121 and a lower end Dome type cylinder 122 which are connected in sequence.
- the top of the upper straight cylinder 121 is connected to the top of the discharge chamber in sequence, and the bottom of the lower Dome-shaped cylinder 122 is sequentially connected to the outer edge of the bottom 13 of the discharge chamber.
- the wall thickness of the discharge chamber body 1 should not be too thin. At the same time, in order to ensure the plasma density of the discharge chamber and the influence of material processing, the wall thickness of the discharge chamber body 1 should not be too thick. Therefore, the discharge chamber body 1 should not be too thick.
- the wall thickness of the main body 1 can be selected from 2 to 20 mm.
- the material of the discharge chamber body 1 can be ceramic or quartz.
- the outer ring of the coil support 3 is installed on the inner wall surface of the ion source cavity, and the shape of the inner wall surface of the coil support 3 is the same as that of the discharge chamber body 1 . As shown in FIG. 5 , the inner wall surface of the coil support 3 is provided with a notch 31 for installing the coil for installing the coil 2 .
- the material of the coil support 3 can be insulating materials such as ceramics and polytetrafluoroethylene.
- Both ends of the coil 2 are connected to the radio frequency source through the radio frequency column 51 or 52 and the wire 61 or 62 respectively.
- the coil 2 includes a cylindrical helical coil and a Dome type coil.
- the position of the cylindrical helical coil corresponds to the position of the upper end straight cylinder, and the position of the Dome type coil corresponds to the position of the lower end Dome type cylinder.
- the distances from each layer of coils 2 to the outer wall surface of the discharge chamber body 1 are equal. Ensuring the distance between the coil 2 and the discharge chamber body 1 is of great significance to the plasma density distribution in the discharge chamber body 1.
- a coil tool 4 is required when winding the coil 2.
- the structure of the coil 2 tool is shown in Figure 7, which can be integrated or composed of multiple parts. 3D printing can be used during processing.
- the distance from the coil 2 to the bottom 1 of the discharge cavity is adjustable, and the position of the bottom end of the coil 2 may be below or above the bottom 13 of the discharge cavity.
- the wall thickness of the discharge chamber body is H
- the distance between each layer of coils and the outer wall of the discharge chamber body is L
- H and L are determined according to the inside of the discharge chamber body.
- the desired plasma density is selected.
- the selection method includes:
- the wall thickness of the discharge chamber body 1 can be selected to be small, and the distance between the discharge chamber body 1 and the coil 2 can be reduced at the same time;
- L it can be understood that when the plasma density in the discharge chamber body 1 is higher, the wall thickness of the discharge chamber body 1 can be selected to be smaller, and the distance between the discharge chamber body 1 and the coil 2 can be reduced, that is, the selected H and L is smaller;
- the wall thickness of the discharge chamber body 1 should be inversely proportional to the distance from the coil 2 to the outer wall of the central portion 12 of the discharge chamber.
- the adjustment method includes:
- the distance between the coil 2 and the discharge chamber body 1 can be selected to be larger; that is, by increasing L, the plasma density in the discharge chamber body 1 can be made uniform. It can be understood that when the wall thickness of the discharge chamber body 1 is smaller, a larger distance can be selected between the coil 2 and the discharge chamber 1, that is, by increasing L, the plasma density in the discharge chamber body 1 can be uniform; as well as
- the distance between the coil 2 and the middle part 1 of the discharge chamber should be reduced; It is understood that the larger the wall thickness H of the discharge chamber body 1 is, the distance between the coil 2 and the middle part 1 of the discharge chamber should be correspondingly reduced, that is, by reducing L, the plasma density in the discharge chamber body 1 can be uniform.
- the Ar plasma gas enters the discharge chamber body 1 , and after the RF power supply is connected to the coil 2 , the ionized gas in the discharge chamber body 1 is ionized. Since the distance between the coil 2 and the middle 12 of the discharge chamber remains the same, therefore:
- the plasma ionization is performed by the Dome-type coil; the Dome-type coil can be decomposed into an axial spiral coil and a radial coil-shaped plane coil; among them, the spiral coil can make the discharge.
- the radio frequency electric field is induced in the cavity along the axial direction, and the coil-shaped planar coil induces the radio frequency electric field in the radial direction in the discharge cavity, so that the plasma density distribution in the entire discharge cavity is uniform and the etching uniformity is ensured;
- plasma ionization is performed by a cylindrical helical coil; the cylindrical helical coil can induce a radio frequency electric field in the discharge chamber along the axial direction.
- the coil is spread evenly at the bottom.
- the length of the coil is related to the inductance. Ensuring that the inductance is sufficient can make the plasma density distribution evenly distributed.
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Abstract
Disclosed is an ion source having a coil structure capable of changing along with a discharge cavity structure, comprising an ion source cavity, a coil support, a coil, and a discharge cavity body which are coaxially arranged in sequence from outside to inside. The discharge cavity body comprises a discharge cavity top part, a discharge cavity middle part, and a discharge cavity bottom part; the discharge cavity top part is a hollow ring; the discharge cavity bottom part is a disc provided with an air inlet in the center; the discharge cavity middle part comprises an upper straight cylinder and a lower dome-shaped cylinder; an outer ring of the coil support is mounted on the inner wall surface of the ion source cavity, and the shape of the inner wall surface of the coil support is the same as the shape of the discharge cavity body; the coil is mounted in the coil support and comprises a cylindrical helical coil and a dome-shaped coil; the position of the cylindrical helical coil corresponds to the position of the upper straight cylinder, and the position of the dome-shaped coil corresponds to the position of the lower dome-shaped cylinder; the distance from each layer of the coil and the outer wall surface of the discharge cavity body is equal. According to the present application, a spiral ICP source is combined with a cylindrical ICP source, such that the plasma density in a discharge cavity body can be adjusted in a segmented manner, and then the etching uniformity is improved.
Description
相关申请Related applications
本申请要求于2021年1月4日提交中国专利局、申请号为202110002163.3、申请名称为“一种线圈结构能随放电腔结构进行变化的离子源”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。This application claims the priority of the Chinese patent application filed on January 4, 2021 with the application number 202110002163.3 and the application title "An ion source whose coil structure can change with the discharge chamber structure", the entire contents of which are Incorporated herein by reference.
本申请涉及离子束刻蚀领域,特别涉及一种线圈结构能随放电腔结构进行变化的离子源。The present application relates to the field of ion beam etching, in particular to an ion source whose coil structure can be changed with the discharge cavity structure.
离子源是使中性原子或分子电离,并从中引出离子束流的装置,它是各种类型的离子加速器、质谱仪、电磁同位素分离器、离子注入机、离子束刻蚀装置、离子推进器以及受控聚变装置中的中性束注入器等设备的不可缺少的部件。An ion source is a device that ionizes neutral atoms or molecules and extracts an ion beam from it. It is various types of ion accelerators, mass spectrometers, electromagnetic isotope separators, ion implanters, ion beam etching devices, and ion thrusters. And an indispensable part of equipment such as neutral beam injectors in controlled fusion devices.
射频感应耦合等离子体(RFICP)源可以在兆赫兹范围内产生共振,并且在低气压下可以有效地产生等离子体,并将能量高效的传递给等离子体,由于其结构简单,能产生高密度的纯净等离子体,使用寿命长、以及性能价格比好等优点,所以在近年发展很快,目前使用的射频ICP(电感耦合等离子体)源主要是圆筒形的,如图1所示,射频ICP源的射频线圈绕在电绝缘的石英放电室外边,当通过匹配网络将射频功率加到线圈上时,线圈中就有射频电流通过,于是产生射频磁通,并且在放电室内部沿着轴向感应出射频电场,其中的电子被电场加速,从而产生等离子体,同时线圈的能量被耦合到等离子体中。Radio Frequency Inductively Coupled Plasma (RFICP) sources can resonate in the megahertz range and can efficiently generate plasma at low gas pressures and transfer energy to the plasma efficiently. Due to its simple structure, it can generate high-density plasma The advantages of pure plasma, long service life, and good performance-price ratio, so it has developed rapidly in recent years. The currently used RF ICP (Inductively Coupled Plasma) sources are mainly cylindrical, as shown in Figure 1. RF ICP The RF coil of the source is wound around the electrically insulated quartz discharge chamber. When RF power is applied to the coil through the matching network, a radio frequency current flows through the coil, thus generating a radio frequency magnetic flux, which is axially generated inside the discharge chamber. A radio frequency electric field is induced in which the electrons are accelerated by the electric field, resulting in a plasma, and the energy of the coil is coupled into the plasma.
由于射频ICP源为圆筒形,当射频电源加载在射频线圈上时,由于电流的趋肤效应,电流主要在放电腔腔壁内流过,在趋肤层内逐渐衰减,故放电腔内的等离子体密度一般呈现两边高,中间低的趋势,如图2中的实线所示。受射频功率和工作压力的影响,反应腔内的等离子体密度分布也会出现马鞍形趋势(图2虚线表示),由于等离子体密度分布不均匀,导致刻蚀速率不均,影响刻蚀均匀性。Because the radio frequency ICP source is cylindrical, when the radio frequency power supply is loaded on the radio frequency coil, due to the skin effect of the current, the current mainly flows in the cavity wall of the discharge cavity and gradually decays in the skin layer, so the current in the discharge cavity The plasma density generally shows a trend of high on both sides and low in the middle, as shown by the solid line in Figure 2. Affected by RF power and working pressure, the plasma density distribution in the reaction chamber will also have a saddle-shaped trend (shown by the dotted line in Figure 2). Due to the uneven plasma density distribution, the etching rate is uneven, which affects the etching uniformity. .
发明内容SUMMARY OF THE INVENTION
本申请各示例性实施例提供一种线圈结构能随放电腔结构进行变化的离子源,该线圈结构能随放电腔结构进行变化的离子源将盘香形ICP源与筒状ICP源相结合,能够分段调节放电 腔本体内的等离子体密度,改善刻蚀均匀性。Exemplary embodiments of the present application provide an ion source whose coil structure can be changed with the discharge cavity structure, and the ion source with the coil structure changing with the discharge cavity structure combines a coil-shaped ICP source with a cylindrical ICP source, The plasma density in the discharge chamber body can be adjusted in stages, and the etching uniformity can be improved.
本申请各示例性实施例提供一种线圈结构能随放电腔结构进行变化的离子源,包括从外至内依次同轴设置的离子源腔、线圈支撑、线圈和放电腔本体。Exemplary embodiments of the present application provide an ion source whose coil structure can be changed with the structure of a discharge cavity, including an ion source cavity, a coil support, a coil and a discharge cavity body that are coaxially arranged in sequence from outside to inside.
放电腔本体包括依次连接的放电腔顶部、放电腔中部和放电腔底部。The discharge chamber body includes a discharge chamber top, a discharge chamber middle and a discharge chamber bottom which are connected in sequence.
放电腔顶部为中空圆环,且位于等离子出口侧。The top of the discharge chamber is a hollow ring and is located on the plasma outlet side.
放电腔底部为中心设有进气孔的圆盘。其中,进气孔用于通入待电离气体。中空圆环的圆心和圆盘的圆心均位于放电腔本体的中心轴线上。The bottom of the discharge chamber is a disc with an air inlet hole in the center. Among them, the air inlet hole is used to introduce the gas to be ionized. The center of the hollow ring and the center of the disk are both located on the central axis of the discharge chamber body.
放电腔中部包括依次连接的上端直筒和下端穹型(Dome)筒。上端直筒的顶端与放电腔顶部依次连接,下端Dome型筒的底部与放电腔底部的外缘依次连接。The middle part of the discharge chamber includes an upper end straight tube and a lower end dome tube which are connected in sequence. The top of the upper straight cylinder is connected with the top of the discharge chamber in sequence, and the bottom of the lower Dome-shaped cylinder is connected with the outer edge of the bottom of the discharge chamber in sequence.
线圈支撑的外圈安装在离子源腔的内壁面,线圈支撑的内壁面形状与放电腔本体的形状相同。The outer ring supported by the coil is installed on the inner wall surface of the ion source cavity, and the shape of the inner wall surface supported by the coil is the same as the shape of the body of the discharge chamber.
线圈安装在线圈支撑内,线圈两端分别与射频源相连接。线圈包括筒形螺旋线圈和Dome型线圈。其中,筒形螺旋线圈的位置与上端直筒的位置相对应,Dome型线圈与下端Dome型筒的位置相对应。每层线圈到放电腔本体外壁面的距离均相等。The coil is installed in the coil support, and the two ends of the coil are respectively connected with the radio frequency source. Coils include cylindrical helical coils and Dome-type coils. The position of the cylindrical helical coil corresponds to the position of the upper end straight cylinder, and the position of the Dome type coil corresponds to the position of the lower end Dome type cylinder. The distances from each layer of coils to the outer wall of the discharge chamber body are equal.
在一实施例中,放电腔本体的壁厚范围在2mm至20mm之间。In one embodiment, the wall thickness of the discharge chamber body ranges from 2 mm to 20 mm.
在一实施例中,放电腔本体的材质为石英或陶瓷。In one embodiment, the material of the discharge chamber body is quartz or ceramic.
在一实施例中,当放电腔本体的材质为石英时,每层线圈到放电腔本体外壁面的距离范围在2mm至30mm之间。当放电腔本体的材质为陶瓷时,每层线圈到放电腔本体外壁面的距离范围在0mm至30mm之间。In one embodiment, when the material of the discharge chamber body is quartz, the distance between each layer of coils and the outer wall surface of the discharge chamber body ranges from 2 mm to 30 mm. When the material of the discharge chamber body is ceramic, the distance between each layer of coils and the outer wall surface of the discharge chamber body ranges from 0 mm to 30 mm.
在一实施例中,放电腔本体的壁厚为H,每层线圈到放电腔本体外壁面的距离均为L,根据放电腔本体内所需的等离子密度确定H和L。In one embodiment, the wall thickness of the discharge chamber body is H, the distance from each layer of coils to the outer wall of the discharge chamber body is L, and H and L are determined according to the required plasma density in the discharge chamber body.
在一实施例中,当放电腔本体内所需的等离子密度较高时,选择H和L的值较小。当放电腔本体内所需的等离子密度较低时,选择H和L的值较大。In one embodiment, the values of H and L are chosen to be small when the desired plasma density within the discharge chamber body is high. Larger values of H and L are chosen when the desired plasma density within the discharge vessel body is low.
在一实施例中,当放电腔本体的壁厚H已确定时,通过调节每层线圈到放电腔本体外壁面的距离L,调节放电腔本体内的等离子体密度。当放电腔本体的壁厚H较大时,通过减小L,使得放电腔本体内的等离子体密度达到均匀。当放电腔本体的壁厚H较小时,通过增大L,使得放电腔本体内的等离子体密度达到均匀。In one embodiment, when the wall thickness H of the discharge chamber body is determined, the plasma density in the discharge chamber body is adjusted by adjusting the distance L from each layer of coils to the outer wall surface of the discharge chamber body. When the wall thickness H of the discharge chamber body is relatively large, by reducing L, the plasma density in the discharge chamber body can be made uniform. When the wall thickness H of the discharge chamber body is small, by increasing L, the plasma density in the discharge chamber body can be made uniform.
在一实施例中,放电腔底部内壁面同轴安装有匀气盘,匀气盘具有与进气孔相连通的匀气腔。In one embodiment, a uniform air plate is coaxially installed on the inner wall surface of the bottom of the discharge chamber, and the air uniform plate has a uniform air cavity communicated with the air inlet hole.
在一实施例中,线圈支撑的内壁面设置有用于安装线圈的槽口。In one embodiment, the inner wall surface of the coil support is provided with a notch for installing the coil.
在一实施例中,线圈采用3D打印成型。In one embodiment, the coil is formed by 3D printing.
本申请具有如下有益效果:This application has the following beneficial effects:
本申请将盘香形电感耦合等离子体(Inductive Coupled Plasma,ICP)源与筒状ICP源相结合,能够分段对等离子体密度进行调节,改善刻蚀均匀性。In the present application, a coil-shaped inductively coupled plasma (Inductive Coupled Plasma, ICP) source is combined with a cylindrical ICP source, which can adjust the plasma density in sections and improve the etching uniformity.
在放电腔本体的下端Dome型筒内部,由Dome型线圈进行等离子体电离;Dome型线圈可以分解为轴向的螺旋线圈和径向的盘香形平面线圈;其中,螺旋线圈能使放电腔内沿轴向感应出射频电场,而盘香形平面线圈则使放电腔内沿径向感应出射频电场,从而,使得整个放电腔内的等离子体密度分布均匀,保证刻蚀均匀性。Inside the Dome-type cylinder at the lower end of the discharge chamber body, the plasma ionization is performed by the Dome-type coil; the Dome-type coil can be decomposed into an axial helical coil and a radial coil-shaped plane coil; wherein, the helical coil can make the discharge chamber The radio frequency electric field is induced along the axial direction, while the coil-shaped planar coil induces the radio frequency electric field in the radial direction in the discharge chamber, so that the plasma density distribution in the entire discharge chamber is uniform and the etching uniformity is ensured.
图1显示了现有技术中离子源的线圈和放电腔结构示意图。FIG. 1 shows a schematic diagram of the structure of the coil and the discharge chamber of the ion source in the prior art.
图2显示了现有技术中离子源放电腔内的等离子密度分布示意图。FIG. 2 shows a schematic diagram of the plasma density distribution in the discharge chamber of the ion source in the prior art.
图3显示了本申请一实施例的线圈结构能随放电腔结构进行变化的离子源的示意图。FIG. 3 shows a schematic diagram of an ion source in which the coil structure can be changed with the discharge cavity structure according to an embodiment of the present application.
图4显示了本申请一实施例的放电腔的结构示意图。FIG. 4 shows a schematic structural diagram of a discharge chamber according to an embodiment of the present application.
图5显示了本申请一实施例的线圈支撑的结构示意图。FIG. 5 shows a schematic structural diagram of a coil support according to an embodiment of the present application.
图6显示了本申请一实施例的线圈的结构示意图。FIG. 6 shows a schematic structural diagram of a coil according to an embodiment of the present application.
图7显示了本申请一实施例的采用线圈工装制作线圈的示意图。FIG. 7 shows a schematic diagram of manufacturing a coil using a coil tool according to an embodiment of the present application.
附图标记:Reference number:
1.放电腔本体;11.放电腔顶部;12.放电腔中部;121.上端直筒;122.下端Dome型筒;13.放电腔底部;131.进气孔;132.匀气盘安装孔;1. The body of the discharge chamber; 11. The top of the discharge chamber; 12. The middle of the discharge chamber; 121. The upper end straight cylinder; 122. The lower end Dome-shaped cylinder;
2.线圈;2. Coil;
3.线圈支撑;31.槽口;3. Coil support; 31. Notch;
4.线圈工装;4. Coil tooling;
51~52.射频柱;61~62.导线;7.匀气盘;10.Grid组件。51~52. Radio frequency column; 61~62. Conductor; 7. Air distribution plate; 10. Grid assembly.
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述。下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。以下所描述的实施例是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. The drawings in the following description are only some embodiments of the present application, and for those of ordinary skill in the art, other drawings can also be obtained from these drawings without creative effort. The embodiments described below are some, but not all, embodiments of the present application. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative efforts shall fall within the protection scope of this application.
应当理解,本申请的说明书和权利要求书中使用的术语“包括”和“包含”指示所描述特征、整体、步骤、操作、元件和/或组件的存在,但并不排除一个或多个其它特征、整体、步骤、操作、元件、组件和/或其集合的存在或添加。It is to be understood that the terms "comprising" and "comprising" used in the description and claims of this application indicate the presence of the described features, integers, steps, operations, elements and/or components, but do not exclude one or more other The presence or addition of features, integers, steps, operations, elements, components and/or sets thereof.
本申请的描述中,需要理解的是,术语“左”、“右”、“上”、“下”等指示的方位或位置 关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作。In the description of this application, it should be understood that the orientations or positional relationships indicated by the terms "left", "right", "upper", "lower", etc. are based on the orientations or positional relationships shown in the accompanying drawings, and are only for convenience This application is described and simplified without indicating or implying that the referred device or element must have a particular orientation, be constructed and operate in a particular orientation.
如图3所示,本申请一实施例提出一种线圈结构能随放电腔结构进行变化的离子源,包括从外至内依次同轴设置的离子源腔、线圈支撑3、线圈2和放电腔本体1。As shown in FIG. 3 , an embodiment of the present application proposes an ion source whose coil structure can be changed with the discharge cavity structure, including an ion source cavity, a coil support 3 , a coil 2 and a discharge cavity that are coaxially arranged from outside to inside. Body 1.
如图4所示,放电腔本体1包括依次连接的放电腔顶部11、放电腔中部12和放电腔底部13。放电腔顶部11、放电腔中部12和放电腔底部13之间可熔焊加工成型,也可以一体成型。As shown in FIG. 4 , the discharge chamber body 1 includes a discharge chamber top 11 , a discharge chamber middle 12 and a discharge chamber bottom 13 which are connected in sequence. The top 11 of the discharge chamber, the middle part 12 of the discharge chamber and the bottom 13 of the discharge chamber can be formed by fusion welding, and can also be integrally formed.
放电腔顶部为中空圆环,且位于等离子出口侧,也即靠近离子源的栅格(Grid)组件10,Grid组件10包括屏栅和加速栅等。The top of the discharge chamber is a hollow ring and is located on the plasma outlet side, that is, close to the grid assembly 10 of the ion source. The grid assembly 10 includes a screen grid, an acceleration grid, and the like.
放电腔底部13为中心设有进气孔131的圆盘。其中,中空圆环的圆心和圆盘的圆心均位于放电腔本体1的中心轴线上。The bottom 13 of the discharge chamber is a disk with an air inlet 131 in the center. Wherein, the center of the hollow ring and the center of the disk are both located on the central axis of the discharge chamber body 1 .
上述进气孔用于通入待电离气体,如氩(Ar)等。在进气孔131的外周还可以开设有匀气盘安装孔132,用于在放电腔底部13内壁面同轴安装匀气盘7,匀气盘7具有与进气孔131相连通的匀气腔。匀气盘7的设置,能使进气均匀。放电腔底部13直径应比匀气盘7外径偏大5mm以上,最大不得超过放电腔本体1的最大内径。The above-mentioned gas inlet holes are used to introduce gas to be ionized, such as argon (Ar) and the like. The outer circumference of the air inlet hole 131 may also be provided with a gas-distribution plate installation hole 132 for coaxially installing the gas-distribution plate 7 on the inner wall surface of the bottom 13 of the discharge cavity. cavity. The setting of the air distribution plate 7 can make the air intake uniform. The diameter of the bottom 13 of the discharge chamber should be more than 5 mm larger than the outer diameter of the gas-distributing plate 7 , and should not exceed the maximum inner diameter of the body 1 of the discharge chamber.
放电腔中部包括依次连接的上端直筒121和下端Dome型筒122。上端直筒121的顶端与放电腔顶部依次连接,下端Dome型筒122的底部与放电腔底部13的外缘依次连接。The middle part of the discharge chamber includes an upper end straight cylinder 121 and a lower end Dome type cylinder 122 which are connected in sequence. The top of the upper straight cylinder 121 is connected to the top of the discharge chamber in sequence, and the bottom of the lower Dome-shaped cylinder 122 is sequentially connected to the outer edge of the bottom 13 of the discharge chamber.
为保证放电腔本体1具有足够强度,放电腔本体1的壁厚不能太薄,同时为保证放电腔的等离子体密度及材料加工影响,放电腔本体1的壁厚不能太厚,所以,放电腔本体1的壁厚可以从2~20mm之间选择。In order to ensure that the discharge chamber body 1 has sufficient strength, the wall thickness of the discharge chamber body 1 should not be too thin. At the same time, in order to ensure the plasma density of the discharge chamber and the influence of material processing, the wall thickness of the discharge chamber body 1 should not be too thick. Therefore, the discharge chamber body 1 should not be too thick. The wall thickness of the main body 1 can be selected from 2 to 20 mm.
放电腔本体1的材质可以为陶瓷或石英材质。The material of the discharge chamber body 1 can be ceramic or quartz.
线圈支撑3的外圈安装在离子源腔的内壁面,线圈支撑3的内壁面形状与放电腔本体1的形状相同。如图5所示,线圈支撑3的内壁面设置有用于安装线圈的槽口31,用于安装线圈2。线圈支撑3的材质可以为陶瓷、聚四氟乙烯等绝缘材质。The outer ring of the coil support 3 is installed on the inner wall surface of the ion source cavity, and the shape of the inner wall surface of the coil support 3 is the same as that of the discharge chamber body 1 . As shown in FIG. 5 , the inner wall surface of the coil support 3 is provided with a notch 31 for installing the coil for installing the coil 2 . The material of the coil support 3 can be insulating materials such as ceramics and polytetrafluoroethylene.
线圈2两端分别通过射频柱51或52、导线61或62与射频源相连接。Both ends of the coil 2 are connected to the radio frequency source through the radio frequency column 51 or 52 and the wire 61 or 62 respectively.
如图6所示,线圈2包括筒形螺旋线圈和Dome(穹)型线圈。其中,筒形螺旋线圈的位置与上端直筒的位置相对应,Dome型线圈与下端Dome型筒的位置相对应。As shown in FIG. 6, the coil 2 includes a cylindrical helical coil and a Dome type coil. The position of the cylindrical helical coil corresponds to the position of the upper end straight cylinder, and the position of the Dome type coil corresponds to the position of the lower end Dome type cylinder.
每层线圈2到放电腔本体1外壁面的距离均相等。保证线圈2和放电腔本体1之间的距离对放电腔本体1内等离子体密度分布具有重要意义,线圈2的成型应与放电腔本体1的结构相一致,若放电腔本体1的材质为石英,每层线圈2到放电腔本体1外壁面的距离均为2~30mm。若放电腔本体1的材质为陶瓷,每层线圈2到放电腔本体外壁面的距离L均为 0~30mm。由于陶瓷的硬度及抗高温能力强,故而当L=0时,也即线圈2固定于陶瓷的放电腔本体1上。The distances from each layer of coils 2 to the outer wall surface of the discharge chamber body 1 are equal. Ensuring the distance between the coil 2 and the discharge chamber body 1 is of great significance to the plasma density distribution in the discharge chamber body 1. The shape of the coil 2 should be consistent with the structure of the discharge chamber body 1. If the material of the discharge chamber body 1 is quartz , the distance from each layer of coil 2 to the outer wall of the discharge chamber body 1 is 2-30 mm. If the material of the discharge chamber body 1 is ceramic, the distance L from each layer of coil 2 to the outer wall of the discharge chamber body is 0-30mm. Due to the high hardness and high temperature resistance of ceramics, when L=0, that is, the coil 2 is fixed on the ceramic discharge chamber body 1 .
为保证每处线圈2到放电腔中部12之间的距离一致,在缠绕线圈2时需利用一个线圈工装4,线圈2工装的结构如图7所示,可以为一体,也可以由多个部分组成,加工时可采用3D打印成型等。In order to ensure that the distance between each coil 2 and the middle 12 of the discharge cavity is consistent, a coil tool 4 is required when winding the coil 2. The structure of the coil 2 tool is shown in Figure 7, which can be integrated or composed of multiple parts. 3D printing can be used during processing.
另外,线圈2到放电腔底部1的距离可调,线圈2底端位置可以在放电腔底部13的下方,也可以在其上方。In addition, the distance from the coil 2 to the bottom 1 of the discharge cavity is adjustable, and the position of the bottom end of the coil 2 may be below or above the bottom 13 of the discharge cavity.
当Ar等离子化气体进入放电腔本体1内的流量确定,放电腔本体的壁厚为H,每层线圈到放电腔本体外壁面的距离均为L,则H和L,根据放电腔本体内所需的等离子密度进行选择。在一实施例中,选择方法包括:When the flow rate of Ar plasma gas entering the discharge chamber body 1 is determined, the wall thickness of the discharge chamber body is H, and the distance between each layer of coils and the outer wall of the discharge chamber body is L, then H and L are determined according to the inside of the discharge chamber body. The desired plasma density is selected. In one embodiment, the selection method includes:
A、若需放电腔本体1内的等离子体密度较高,放电腔本体1可以选择小壁厚,同时减小放电腔本体1与线圈2之间的距离;也即选择均较小的H和L,可以理解为,放电腔本体1内的等离子密度越高时,放电腔本体1可以选择越小的壁厚,同时减小放电腔本体1与线圈2之间的距离,也即选择的H和L越小;以及A. If the plasma density in the discharge chamber body 1 is required to be high, the wall thickness of the discharge chamber body 1 can be selected to be small, and the distance between the discharge chamber body 1 and the coil 2 can be reduced at the same time; L, it can be understood that when the plasma density in the discharge chamber body 1 is higher, the wall thickness of the discharge chamber body 1 can be selected to be smaller, and the distance between the discharge chamber body 1 and the coil 2 can be reduced, that is, the selected H and L is smaller; and
B、若需放电腔本体1内的等离子体密度偏低,放电腔本体1可以选择大壁厚,同时加大放电腔本体1与线圈2之间的距离;也即选择均较大的H和L,可以理解为,放电腔本体1内的等离子体密度越低,放电腔本体1可以选择越厚的壁厚,同时加大放电腔本体1和线圈2之间的距离,也即选择的H和L越大。B. If the plasma density in the discharge chamber body 1 is required to be low, the wall thickness of the discharge chamber body 1 can be selected to be large, and the distance between the discharge chamber body 1 and the coil 2 can be increased at the same time; L, it can be understood that the lower the plasma density in the discharge chamber body 1, the thicker the wall thickness of the discharge chamber body 1 can be selected, and at the same time the distance between the discharge chamber body 1 and the coil 2 is increased, that is, the selected H and L is larger.
另外,若期望放电腔本体1内的等离子密度趋于均匀一致,放电腔本体1的壁厚与线圈2到放电腔中部12外壁之间的距离应呈反比。具体地,调节方法包括:In addition, if the plasma density in the discharge chamber body 1 is expected to be uniform, the wall thickness of the discharge chamber body 1 should be inversely proportional to the distance from the coil 2 to the outer wall of the central portion 12 of the discharge chamber. Specifically, the adjustment method includes:
A、当放电腔本体1的壁厚H较小时,线圈2到放电腔本体1之间的距离可以选择较大;也即通过增大L,使得放电腔本体1内的等离子体密度达到均匀,可以理解为,当放电腔本体1的壁厚越小时,线圈2到放电腔1之间可以选择越大的距离,也即通过增大L,使得放电腔本体1内的等离子体密度达到均匀;以及A. When the wall thickness H of the discharge chamber body 1 is small, the distance between the coil 2 and the discharge chamber body 1 can be selected to be larger; that is, by increasing L, the plasma density in the discharge chamber body 1 can be made uniform. It can be understood that when the wall thickness of the discharge chamber body 1 is smaller, a larger distance can be selected between the coil 2 and the discharge chamber 1, that is, by increasing L, the plasma density in the discharge chamber body 1 can be uniform; as well as
B、当放电腔本体1的壁厚H较大时,应减少线圈2到放电腔中部1之间的距离;也即通过减小L,使得放电腔本体1内的等离子体密度达到均匀,可以理解为放电腔本体1的壁厚H越大,应相应减少线圈2到放电腔中部1之间的距离,也即通过减小L,使得放电腔本体1内的等离子体密度达到均匀。B. When the wall thickness H of the discharge chamber body 1 is large, the distance between the coil 2 and the middle part 1 of the discharge chamber should be reduced; It is understood that the larger the wall thickness H of the discharge chamber body 1 is, the distance between the coil 2 and the middle part 1 of the discharge chamber should be correspondingly reduced, that is, by reducing L, the plasma density in the discharge chamber body 1 can be uniform.
在需要刻蚀时,Ar等离子化气体进入放电腔本体1内,线圈2上通射频电源后,对放电腔本体1内的离子化气体进行电离。由于线圈2与放电腔中部12之间的距离保持不变,因此:When etching is required, the Ar plasma gas enters the discharge chamber body 1 , and after the RF power supply is connected to the coil 2 , the ionized gas in the discharge chamber body 1 is ionized. Since the distance between the coil 2 and the middle 12 of the discharge chamber remains the same, therefore:
A、在放电腔本体的下端Dome型筒内部,由Dome型线圈进行等离子体电离;Dome型 线圈可以分解为轴向的螺旋线圈和径向的盘香形平面线圈;其中,螺旋线圈能使放电腔内沿轴向感应出射频电场,而盘香形平面线圈则使放电腔内沿径向感应出射频电场,从而,使得整个放电腔内的等离子体密度分布均匀,保证刻蚀均匀性;以及A. Inside the Dome-type cylinder at the lower end of the discharge chamber body, the plasma ionization is performed by the Dome-type coil; the Dome-type coil can be decomposed into an axial spiral coil and a radial coil-shaped plane coil; among them, the spiral coil can make the discharge The radio frequency electric field is induced in the cavity along the axial direction, and the coil-shaped planar coil induces the radio frequency electric field in the radial direction in the discharge cavity, so that the plasma density distribution in the entire discharge cavity is uniform and the etching uniformity is ensured; and
B、在放电腔本体1的上端直筒内部,由筒形螺旋线圈进行等离子体电离;筒形螺旋线圈能使放电腔内沿轴向感应出射频电场,在放电腔本体1的上端直筒内部不加线圈,靠下方均匀扩散,线圈长度跟电感有关,保证电感够就能够使等离子体密度分布均匀分布。B. Inside the straight cylinder at the upper end of the discharge chamber body 1, plasma ionization is performed by a cylindrical helical coil; the cylindrical helical coil can induce a radio frequency electric field in the discharge chamber along the axial direction. The coil is spread evenly at the bottom. The length of the coil is related to the inductance. Ensuring that the inductance is sufficient can make the plasma density distribution evenly distributed.
以上详细描述了本申请的一些实施方式,但是,本申请并不限于上述实施方式中的具体细节,在本申请的技术构思范围内,可以对本申请的技术方案进行多种等同变换,这些等同变换均属于本申请的保护范围。Some embodiments of the present application have been described in detail above. However, the present application is not limited to the specific details of the above-mentioned embodiments. Within the scope of the technical concept of the present application, various equivalent transformations can be performed on the technical solutions of the present application. These equivalent transformations All belong to the protection scope of this application.
Claims (10)
- 一种线圈结构能随放电腔结构进行变化的离子源,包括:An ion source whose coil structure can be changed with the discharge cavity structure, including:从外至内依次同轴设置的离子源腔、线圈支撑、线圈和放电腔本体;The ion source cavity, the coil support, the coil and the discharge cavity body are arranged coaxially from outside to inside in sequence;其中,所述放电腔本体包括依次连接的放电腔顶部、放电腔中部和放电腔底部;所述放电腔顶部为中空圆环,且位于等离子出口侧;所述放电腔底部的中心设有圆盘,所述圆盘上设有进气孔;其中,所述进气孔用于通入待电离气体;所述中空圆环的圆心和所述圆盘的圆心均位于所述放电腔本体的中心轴线上;所述放电腔中部包括依次连接的上端直筒和下端Dome型筒;所述上端直筒的顶端与所述放电腔顶部连接,所述下端Dome型筒的底部与所述放电腔底部的外缘连接;The discharge chamber body includes a discharge chamber top, a discharge chamber middle and a discharge chamber bottom which are connected in sequence; the discharge chamber top is a hollow ring and is located on the plasma outlet side; the center of the discharge chamber bottom is provided with a disc , the disk is provided with an air inlet hole; wherein, the air inlet hole is used to pass the gas to be ionized; the center of the hollow ring and the center of the disk are both located in the center of the discharge chamber body On the axis; the middle part of the discharge chamber includes an upper end straight cylinder and a lower end Dome-shaped cylinder which are connected in sequence; the top end of the upper end straight cylinder is connected with the top of the discharge chamber, and the bottom of the lower end Dome-shaped cylinder is connected with the outer part of the bottom of the discharge chamber. edge connection;其中,所述线圈支撑的外圈安装在所述离子源腔的内壁面,所述线圈支撑的内壁面的形状与所述放电腔本体的形状相同;所述线圈安装在所述线圈支撑内,所述线圈两端分别与射频源相连接;所述线圈包括筒形螺旋线圈和Dome型线圈;其中,所述筒形螺旋线圈的位置与所述上端直筒的位置相对应,所述Dome型线圈与所述下端Dome型筒的位置相对应;每层所述线圈到所述放电腔本体的外壁面的距离均相等。Wherein, the outer ring supported by the coil is installed on the inner wall of the ion source cavity, and the shape of the inner wall supported by the coil is the same as the shape of the discharge chamber body; the coil is installed in the coil support, Both ends of the coil are respectively connected with a radio frequency source; the coil includes a cylindrical helical coil and a Dome-type coil; wherein, the position of the cylindrical helical coil corresponds to the position of the upper straight cylinder, and the Dome-type coil Corresponding to the position of the Dome-shaped cylinder at the lower end; the distances from the coils of each layer to the outer wall surface of the discharge chamber body are equal.
- 根据权利要求1所述的离子源,其中,所述放电腔本体的壁厚范围在2mm至20mm之间。The ion source of claim 1, wherein the wall thickness of the discharge chamber body is in the range of 2 mm to 20 mm.
- 根据权利要求1所述的离子源,其中,所述放电腔本体的材质为石英或陶瓷。The ion source according to claim 1, wherein the material of the discharge chamber body is quartz or ceramic.
- 根据权利要求1所述的离子源,其中,当所述放电腔本体的材质为石英时,每层所述线圈到所述放电腔本体的所述外壁面的距离范围在2mm至30mm之间;当所述放电腔本体的材质为陶瓷时,每层所述线圈到所述放电腔本体的所述外壁面的距离范围在0mm至30mm之间。The ion source according to claim 1, wherein, when the material of the discharge chamber body is quartz, the distance between each layer of the coil and the outer wall of the discharge chamber body ranges from 2 mm to 30 mm; When the material of the discharge chamber body is ceramic, the distance between each layer of the coil and the outer wall surface of the discharge chamber body ranges from 0 mm to 30 mm.
- 根据权利要求1所述的离子源,其中,所述放电腔本体的壁厚为H,每层所述线圈到所述放电腔本体的所述外壁面的距离均为L,其中,根据所述放电腔本体内所需的等离子密度确定H和L。The ion source according to claim 1, wherein the wall thickness of the discharge chamber body is H, and the distance from each layer of the coil to the outer wall of the discharge chamber body is L, wherein according to the The desired plasma density within the discharge vessel body determines H and L.
- 根据权利要求5所述的离子源,其中,当所述放电腔本体内的所述所需的等离子密度较高时,选择的H和L值较小;当所述放电腔本体内的所述所需的等离子密度较低时,选择的H和L值较大。6. The ion source of claim 5, wherein the values of H and L are selected to be smaller when the desired plasma density within the discharge chamber body is higher; and when the desired plasma density within the discharge chamber body is higher; Larger values of H and L are chosen when the desired plasma density is low.
- 根据权利要求5所述的离子源,其中,当所述放电腔本体的所述壁厚H已确定时,通过调节每层所述线圈到所述放电腔本体的所述外壁面的所述距离L,来调节所述放电腔本体内的等离子体密度;当所述放电腔本体的所述壁厚H较大时,通过减小所述距离L,以使得所述放电腔本体内的所述等离子体密度达到均匀;当所述放电腔本体的所述壁厚H较小时,通过增大所述距离L,以使得所述放电腔本体内的所述等离子体密度达到均匀。The ion source according to claim 5, wherein, when the wall thickness H of the discharge chamber body is determined, the distance from each layer of the coil to the outer wall of the discharge chamber body is adjusted by adjusting the distance L, to adjust the plasma density in the discharge chamber body; when the wall thickness H of the discharge chamber body is relatively large, by reducing the distance L, the The plasma density is uniform; when the wall thickness H of the discharge chamber body is small, the distance L is increased to make the plasma density in the discharge chamber body uniform.
- 根据权利要求1所述的离子源,其中,所述放电腔底部的内壁面上同轴地安装有匀气盘,所述匀气盘具有与所述进气孔相连通的匀气腔。The ion source according to claim 1, wherein a uniform air plate is coaxially installed on the inner wall surface of the bottom of the discharge chamber, and the air uniform plate has a uniform air cavity communicated with the air inlet hole.
- 根据权利要求1所述的离子源,其中,所述线圈支撑的所述内壁面上设置有用于安装所述线圈的槽口。The ion source according to claim 1, wherein a notch for installing the coil is provided on the inner wall surface of the coil support.
- 根据权利要求1所述的离子源,其中,所述线圈为3D打印成型。The ion source of claim 1, wherein the coil is 3D printed.
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KR1020237024117A KR20230119210A (en) | 2021-01-04 | 2021-12-14 | Ion source in which the coil structure can be changed according to the discharge chamber structure |
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CN202110002163.3A CN114724912A (en) | 2021-01-04 | 2021-01-04 | Ion source with coil structure capable of changing along with discharge cavity structure |
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US20080223521A1 (en) * | 2004-03-30 | 2008-09-18 | Nam Hun Kim | Plasma Source Coil and Plasma Chamber Using the Same |
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CN107086178A (en) * | 2016-02-12 | 2017-08-22 | 朗姆研究公司 | System and method for selective etch film |
CN210349768U (en) * | 2019-10-18 | 2020-04-17 | 鑫天虹(厦门)科技有限公司 | Plasma etching reaction chamber with adjustable radio frequency coil |
-
2021
- 2021-01-04 CN CN202110002163.3A patent/CN114724912A/en active Pending
- 2021-12-14 WO PCT/CN2021/137797 patent/WO2022143144A1/en active Application Filing
- 2021-12-14 KR KR1020237024117A patent/KR20230119210A/en unknown
- 2021-12-14 TW TW110146802A patent/TW202228180A/en unknown
Patent Citations (6)
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US6036878A (en) * | 1996-02-02 | 2000-03-14 | Applied Materials, Inc. | Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna |
US6071372A (en) * | 1997-06-05 | 2000-06-06 | Applied Materials, Inc. | RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls |
US20080223521A1 (en) * | 2004-03-30 | 2008-09-18 | Nam Hun Kim | Plasma Source Coil and Plasma Chamber Using the Same |
US20090250334A1 (en) * | 2008-04-03 | 2009-10-08 | Novellus Systems, Inc. | Plasma generator systems and methods of forming plasma |
CN107086178A (en) * | 2016-02-12 | 2017-08-22 | 朗姆研究公司 | System and method for selective etch film |
CN210349768U (en) * | 2019-10-18 | 2020-04-17 | 鑫天虹(厦门)科技有限公司 | Plasma etching reaction chamber with adjustable radio frequency coil |
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