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WO2022000706A1 - 触控显示装置 - Google Patents

触控显示装置 Download PDF

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Publication number
WO2022000706A1
WO2022000706A1 PCT/CN2020/107859 CN2020107859W WO2022000706A1 WO 2022000706 A1 WO2022000706 A1 WO 2022000706A1 CN 2020107859 W CN2020107859 W CN 2020107859W WO 2022000706 A1 WO2022000706 A1 WO 2022000706A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
display device
touch display
touch
wire
Prior art date
Application number
PCT/CN2020/107859
Other languages
English (en)
French (fr)
Inventor
叶剑
Original Assignee
武汉华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US17/047,407 priority Critical patent/US11532678B2/en
Publication of WO2022000706A1 publication Critical patent/WO2022000706A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes

Definitions

  • the present application relates to the technical field of touch display, and in particular, to a touch display device.
  • Flexible organic light-emitting diode Organic Light-Emitting Diode, OLED
  • OLED Organic Light-Emitting Diode
  • Flexible organic light-emitting diode displays It is more and more popular in the market, and gradually replaces liquid crystal displays as the mainstream of display technology.
  • FIG. 1 it is a schematic diagram of a conventional flexible organic light emitting diode display.
  • Traditional flexible organic light emitting diode displays include thin film transistor arrays (Thin Film Transistor Array, TFT Array) substrate 100, anode (Anode) layer 101, pixel definition layer (Pixel Definition Layer, PDL) 102, support column (Photo Spacer, PS) 103, organic light-emitting layer (Luminescence) layer, EL) 104, cathode (Cathode) layer 105, thin film packaging (Thin Film) Encapsulation (TFE) layer 106 and a touch electrode layer 107 located above the thin film encapsulation layer 106 , the touch electrode layer includes a metal grid, and the metal grid is composed of metal lines 1071 .
  • the support pillars 103 are dispersed and arranged above the pixel definition layer 102 according to a certain rule to form a plurality of protrusions, and the support pillars 103 are located at the gap positions of the openings of the pixel definition layer of the adjacent light-emitting sub-pixels.
  • the support pillars 103 are mainly used for evaporating the organic light-emitting layer.
  • the distance between the cathode 105 on the support column 103 and the touch electrode located on the surface of the thin film encapsulation layer 106 is compared with that of the cathode 105 on the upper surface of the pixel definition layer 102 and the thin film encapsulation layer 106 The distance between the touch electrodes on the surface is closer, resulting in a larger parasitic capacitance of the touch electrodes directly above the position of the support column 103 , thereby affecting the touch sensitivity and other properties of the area.
  • the purpose of the present application is to provide a touch display device to solve the problem that the distance between the cathode on the support column and the touch electrode is small, resulting in large parasitic capacitance, which affects the performance of touch sensitivity and the like.
  • the present application provides a touch display device, the touch display device comprising:
  • an organic light emitting diode display panel the organic light emitting diode display panel includes a support column and a cathode, and a part of the cathode is formed on the support column;
  • the touch layer is located on one side of the organic light emitting diode display panel, the touch layer includes an insulating layer and a first conductive layer, the insulating layer is provided with protrusions, and part of the first conductive layer
  • the conductive layer is located on the side of the protrusion away from the cathode, and the orthographic projection of the protrusion on the touch display device at least partially coincides with the orthographic projection of the support column on the touch display device;
  • the organic light emitting diode display panel further includes a pixel definition layer, the support column is disposed on the pixel definition layer, a part of the cathode is formed on the pixel definition layer, and a part of the first conductive layer is formed on the pixel definition layer on the insulating layer;
  • the distance between the cathode formed on the pixel definition layer and the corresponding first conductive layer is equal to a distance between the cathode formed on the support column and a distance from the cathode disposed on the protrusion. the spacing between the first conductive layers on the sides;
  • the touch control layer further includes a second conductive layer, the insulating layer is located between the first conductive layer and the second conductive layer, the second conductive layer includes a bridge line, and the bridge line is located between the first conductive layer and the second conductive layer.
  • the orthographic projection on the touch display device is staggered from the orthographic projection of the support column on the touch display device.
  • the height of the protrusion is equal to the height of the support column.
  • the first conductive layer includes a first electrode and a second electrode, the first electrode and the second electrode are electrically insulated, and two adjacent first electrodes are formed continuously, Two adjacent second electrodes are electrically connected through the bridge lines, and each of the second electrodes and the bridge lines are electrically connected through a first via hole on the insulating layer.
  • the first conductive layer further includes a first wire and a second wire
  • the second conductive layer further includes a third wire and a fourth wire
  • the third wire is electrically connected to the first wire one-to-one, and the third wire is electrically connected to a part of the first electrode through a second via hole on the insulating layer;
  • the fourth wire is electrically connected to the second wire one-to-one, and the fourth wire is electrically connected to a part of the second electrode through a third via hole on the insulating layer.
  • the orthographic projection of the support column on the touch display device is located within the orthographic projection of the protrusion on the touch display device, or the support column is located on the touch display device.
  • the orthographic projection on the touch display device completely coincides with the orthographic projection of the protrusion on the touch display device.
  • the insulating layer includes at least one of an inorganic insulating layer or an organic insulating layer.
  • the organic light emitting diode display panel includes a plurality of sub-pixels, and the support column is disposed between two adjacent sub-pixels.
  • the organic light emitting diode display panel includes an encapsulation layer, and the encapsulation layer is disposed between the cathode and the touch layer.
  • a touch display device comprising:
  • an organic light emitting diode display panel the organic light emitting diode display panel includes a support column and a cathode, and a part of the cathode is formed on the support column;
  • the touch layer is located on one side of the organic light emitting diode display panel, the touch layer includes an insulating layer and a first conductive layer, the insulating layer is provided with protrusions, and part of the first conductive layer The conductive layer is located on the side of the protrusion away from the cathode, and the orthographic projection of the protrusion on the touch display device at least partially coincides with the orthographic projection of the support column on the touch display device.
  • the organic light emitting diode display panel further includes a pixel definition layer, the support column is disposed on the pixel definition layer, a part of the cathode is formed on the pixel definition layer, and a part of the cathode is formed on the pixel definition layer.
  • a first conductive layer is formed on the insulating layer,
  • the distance between the cathode formed on the pixel definition layer and the corresponding first conductive layer is equal to a distance between the cathode formed on the support column and a distance from the cathode disposed on the protrusion. the spacing between the first conductive layers on the sides.
  • the height of the protrusion is equal to the height of the support column.
  • the touch layer further includes a second conductive layer, the insulating layer is located between the first conductive layer and the second conductive layer, and the second conductive layer includes bridge lines , the orthographic projection of the bridge line on the touch display device is staggered from the orthographic projection of the support column on the touch display device.
  • the first conductive layer includes a first electrode and a second electrode, the first electrode and the second electrode are electrically insulated, and two adjacent first electrodes are formed continuously, Two adjacent second electrodes are electrically connected through the bridge lines, and each of the second electrodes and the bridge lines are electrically connected through a first via hole on the insulating layer.
  • the first conductive layer further includes a first wire and a second wire
  • the second conductive layer includes a third wire and a fourth wire
  • the third wire is electrically connected to the first wire one-to-one, and the third wire is electrically connected to a part of the first electrode through a second via hole on the insulating layer;
  • the fourth wire is electrically connected to the second wire one-to-one, and the fourth wire is electrically connected to a part of the second electrode through a third via hole on the insulating layer.
  • the orthographic projection of the support column on the touch display device is located within the orthographic projection of the protrusion on the touch display device, or the support column is located on the touch display device.
  • the orthographic projection on the touch display device completely coincides with the orthographic projection of the protrusion on the touch display device.
  • the insulating layer includes at least one of an inorganic insulating layer or an organic insulating layer.
  • the organic light emitting diode display panel includes an encapsulation layer, and the encapsulation layer is disposed between the cathode and the touch layer.
  • the present application provides a touch display device, the touch display device includes: an organic light emitting diode display panel, the organic light emitting diode display panel includes a support column and a cathode, and part of the cathode is formed on the support column; a touch layer, the touch layer is located on the organic light emitting diode display panel.
  • the touch layer On one side of the light-emitting diode display panel, the touch layer includes an insulating layer and a first conductive layer, the insulating layer is provided with protrusions, part of the first conductive layer is located on the side of the protrusions away from the cathode, and the protrusions are on the touch display device
  • the orthographic projection of the support column at least partially coincides with the orthographic projection of the support column on the touch display device.
  • FIG. 1 is a schematic diagram of a conventional flexible organic light emitting diode display
  • FIG. 2 is a schematic cross-sectional view of the touch display device of the present application.
  • FIG. 4 is a schematic diagram illustrating the arrangement of metal grids surrounding sub-pixels and the distribution of support columns
  • 5A-5C are schematic diagrams of the process of forming the touch layer of the present application.
  • the touch display device includes an organic light emitting diode display panel 20 and a touch layer 30 .
  • the organic light emitting diode display panel 20 may be a flexible organic light emitting diode display panel or a rigid organic light emitting diode display panel.
  • the touch layer 30 is located on one side of the organic light emitting diode display panel 20 . Specifically, the touch layer 30 is located on the light-emitting side of the organic light emitting diode display panel 20 .
  • the organic light emitting diode display panel 20 includes a substrate 200 , a thin film transistor array layer, an organic light emitting diode array layer, and an encapsulation layer 203 .
  • the thin film transistor array layer includes a plurality of thin film transistors arranged in an array.
  • the thin film transistor array layer includes an active layer 2011, a gate insulating layer 2012, a gate electrode 2013, a first insulating layer 2014, a patterned metal member 2015, a second insulating layer 2016, source and drain electrodes (20171, 20172), and a planarization layer 2018, pixel definition layer 2019, and support pillars 2020.
  • the active layer 2011 is disposed on the substrate 200 .
  • the preparation material of the active layer 2011 is polysilicon.
  • the gate insulating layer 2012 covers the active layer 2011 and the substrate 200.
  • the gate insulating layer 2012 is made of at least one of silicon nitride and silicon oxide.
  • the thickness of the gate insulating layer 2012 is 800 angstroms to 1200 angstroms.
  • the gate electrode 2013 is disposed on the gate insulating layer 2012 and is disposed corresponding to the active layer 2011 , and the preparation material of the gate electrode 2013 is selected from at least one of molybdenum, aluminum, titanium and copper.
  • the first insulating layer 2014 covers the gate electrode 2013 and the gate insulating layer 2012, and the material for preparing the first insulating layer 2014 is selected from at least one of silicon nitride or silicon oxide.
  • the patterned metal member 2015 is disposed on the first insulating layer 2014 and is disposed corresponding to the gate 2013 , the patterned metal member 2015 and the gate 2013 form a capacitor, the orthographic projection of the patterned metal member 2015 on the touch display device 40 and the gate The orthographic projections of 2013 on the touch display device 40 are completely overlapped, and the preparation material of the patterned metal member 2015 is the same as that of the gate electrode 2013 .
  • the second insulating layer 2016 covers the patterned metal member 2015 and the first insulating layer 2014 .
  • the source and drain electrodes (20171, 20172) include a source electrode 20171 and a drain electrode 20172.
  • the source electrode 20171 and the drain electrode 20172 are disposed on the second insulating layer 2016, and the source electrode 20171 and the drain electrode 20172 pass through the first insulating layer 2014,
  • the via holes of the second insulating layer 2016 and the gate insulating layer 2012 are in contact with the active layer 2011 , and the source electrode 20171 and the drain electrode 20172 are symmetrically disposed on opposite sides of the gate electrode 2013 respectively.
  • the planarization layer 2018 covers the source and drain electrodes ( 20171 , 20172 ) and the second insulating layer 2016 , the planarization layer 2018 is an organic insulating layer, and the thickness of the planarization layer 2018 is 0.8 ⁇ m-2.5 ⁇ m.
  • a plurality of independent anodes are formed on the planarization layer 2018.
  • the pixel definition layer 2019 covers the plurality of independent anodes 2021 and the planarization layer 2018 .
  • the pixel definition layer 2019 is provided with a plurality of openings corresponding to the plurality of independent anodes 2021 , and the longitudinal section of the opening is an inverted trapezoid.
  • the pixel definition layer 2019 is an organic insulating layer, and the thickness of the pixel definition layer 2019 is 0.8 micrometers to 2.5 micrometers, for example, 2 micrometers.
  • the support pillars 2020 are disposed on the pixel definition layer 2019 and located between two adjacent openings of the pixel definition layer 2019 .
  • the support pillars 2020 are used to support the fine mask in the process of evaporating the organic light emitting layer into the opening.
  • the support pillars 2020 and the pixel definition layer 2019 can be prepared by one process, for example, by using the same halftone mask and a yellow light process.
  • the longitudinal section of the support column 2020 is trapezoidal, and the cross section of the support column 2020 is circular.
  • the height of the support post 2020 is 0.8 microseconds to 1.2 microseconds, eg, 1 micrometer.
  • the organic light emitting diode array layer 202 includes organic light emitting diodes arranged in an array.
  • the organic light emitting diode array layer includes a plurality of independent anodes 2021, an organic light emitting layer 2022 disposed on each anode 2021 and located in the opening, and a cathode 2023.
  • a plurality of organic light emitting diodes share one cathode, and the cathode 2023 is formed by evaporation. face formed. Part of the cathode 2023 is formed on the support column 2020 , part of the cathode 2023 is formed on the organic light emitting layer 2022 , and part of the cathode 2023 is formed on the pixel definition layer 2019 .
  • the encapsulation layer 203 is disposed between the cathode 2023 and the touch layer 30 .
  • the encapsulation layer 203 is a thin film encapsulation layer.
  • the thickness of the encapsulation layer 203 is 6 micrometers to 14 micrometers, for example, 10 micrometers.
  • the encapsulation layer 203 is used to prevent the cathode 2023 and the organic light-emitting layer 2022 from being corroded by oxygen or water vapor.
  • FIG. 3 it is a schematic cross-sectional view of the touch layer of the touch display device shown in FIG. 2 .
  • the touch layer includes a buffer layer 301 , a second conductive layer 302 , a first passivation layer 303 , a first conductive layer 304 and a second passivation layer 305 .
  • the buffer layer 301 is disposed on the encapsulation layer 203 .
  • the preparation material of the buffer layer 301 is selected from at least one of silicon nitride and silicon oxide.
  • the second conductive layer 302 is disposed on the buffer layer 301 .
  • the second conductive layer 302 includes bridge lines 3021 , and the bridge lines 3021 are composed of metal lines.
  • the bridge lines 3021 are distributed according to a certain rule.
  • the orthographic projection of the bridge wire 3021 on the touch display device and the orthographic projection of the support column 2020 on the touch display device are staggered, so as to avoid parasitic capacitance between the bridge wire 3021 and the cathode 2023 on the support column 2020, thereby improving the touch control performance. Dot rate and touch sensitivity, etc.
  • the first passivation layer 303 is an insulating layer.
  • the first passivation layer 303 is located between the first conductive layer 304 and the second conductive layer 302 .
  • the first passivation layer 303 includes at least one of an organic insulating layer or an inorganic insulating layer.
  • the first passivation layer 303 includes an organic insulating layer, and the thickness of the organic insulating layer is 0.8 ⁇ m-1.2 ⁇ m, for example, 1 ⁇ m.
  • Protrusions 3031 are disposed on the first passivation layer 303 , part of the first conductive layer 304 is formed on the side of the protrusion 3031 away from the cathode 2023 , and part of the first conductive layer 304 is formed on the first passivation layer 303 .
  • the protrusions 3031 and the first passivation layer 303 can be prepared through the same process.
  • the orthographic projection of the protrusion 3031 on the touch display device and the orthographic projection of the support column 2020 on the touch display device at least partially overlap, so as to increase the cathode 2023 formed on the support column 2020 and the protrusion 3031 away from the cathode 2023.
  • the spacing between the first conductive layers 304 on the side of the bumps 3031 reduces the parasitic capacitance between the first conductive layers 304 on the protrusions 3031 and the cathodes 2023 formed on the support pillars 2020 , and improves the touch reporting rate.
  • the “at least partial coincidence” in the orthographic projection of the protrusions 3031 on the touch display device and the orthographic projection of the support pillars 2020 on the touch display device at least partially means that “the protrusions 3031 are on the touch display device”. At least a part of the orthographic projection on the device and at least a part of the orthographic projection of the support column 2020 on the touch display device are at the same position on the same two-dimensional plane and have the same shape and size.
  • the orthographic projections "completely coincide” and the orthographic projections "completely overlap” mean that the positions, shapes and sizes of the projections are exactly the same.
  • the distance between the cathode 2023 formed on the pixel definition layer 2019 and the corresponding first conductive layer 304 is equal to that formed on the support column 2020
  • the distance between the cathode 2023 and the first conductive layer 304 disposed on the protrusion 3031 is equal to the distance between the cathode and the corresponding first conductive layer 304 in the position where the pixel definition layer 2019 is not provided with the support column 2020 and the corresponding first conductive layer 304
  • the distance between the cathode on the pillar 2020 and the first conductive layer 304 on the protrusion 3031 is to make the distance between the first conductive layer 304 and the cathode 2023 at different positions the same, so as to avoid touch noise caused by different parasitic capacitances, and improve the Touch performance.
  • the height of the protrusions 3031 is equal to the height of the support pillars 2020 , so that the distance between the cathode 2023 and the first conductive layer 304 where the pixel definition layer 2019 is not provided with the support pillars 2020 is equal to the cathode 2023 on the support pillar 2020
  • the distance from the first conductive layer 304 on the protrusion 3031 is the same.
  • the orthographic projection of the support column 2020 on the touch display device is within the orthographic projection of the protrusion 3031 on the touch display device, or, the orthographic projection of the support column 2020 on the touch display device and the protrusion 3031 on the touch display device.
  • the orthographic projections on the upper and lower sides are completely coincident, so that the distance from the first conductive layer 304 disposed corresponding to the support column 2020 to the cathode 2023 on the support column 2020 is increased.
  • the first conductive layer 304 includes a first electrode 3041 and a second electrode 3042, the first electrode 3041 and the second electrode 3042 are electrically insulated, two adjacent first electrodes 3041 are formed continuously, and two adjacent first electrodes 3041 are formed continuously.
  • the second electrodes 3042 are electrically connected through the bridge lines 302 , and each of the second electrodes 3042 and the bridge lines 302 are electrically connected through the first vias 303 a on the first passivation layer 303 .
  • the second passivation layer 305 covers the first conductive layer 304 and the first passivation layer 303 .
  • the second passivation layer 305 is an insulating layer.
  • the first electrode 3041 , the second electrode 3042 and the bridge wire 3021 are all composed of metal meshes.
  • a metal grid consists of metal wires.
  • the first electrode 3041 , the second electrode 3042 and the bridge line 3021 are arranged correspondingly to the display area of the organic light emitting diode display panel.
  • the organic light emitting diode display panel includes a plurality of sub-pixels
  • the touch layer includes a plurality of metal grids
  • each metal grid is arranged around a sub-pixel, so as to avoid the light emitted by the sub-pixels being blocked by the metal lines.
  • the support column 2020 is disposed between two adjacent sub-pixels, and there are 2 sub-pixels, 4 sub-pixels or 8 sub-pixels between adjacent two supporting columns 2020 .
  • the plurality of metal grids include rectangular metal grids and diamond-shaped metal grids.
  • the sub-pixels include diamond-shaped sub-pixels.
  • FIGS. 5A-5C are schematic diagrams of the process of forming the touch layer of the present application.
  • the steps of forming the touch layer include:
  • a second metal layer on the entire surface is formed by physical vapor deposition, such as Ti/Al/Ti, or other metals such as Mo/Cu/Ag and their alloys, and the second metal layer is patterned by a yellow photolithography (dry etching) process.
  • Two metal layers form a bridge line (Bridge) 3021, a third wire 3022 and a fourth wire 3023, as shown in 5A.
  • S101 secondly, forming the first passivation layer 303 covering the bridge line (Bridge) 3021, the third wire 3022 and the fourth wire 3023, using the process of photolithography (dry etching) to pattern the first passivation layer, at A first via hole 303a is formed at the end of the bridge wire 3021 and a corresponding second via hole 303b and a third via hole 303c are formed at the end of the touch electrode channel, wherein the second via hole 303b is disposed corresponding to the third wire 3022, The three vias 303c are disposed corresponding to the fourth wires 3023, as shown in FIG. 5B . Part of the via holes on the first passivation layer 303 are disposed just above the third wires 3022 .
  • a first metal layer on the entire surface is formed on the first passivation layer by physical vapor deposition, and the first metal layer is Ti/Al/Ti, or other metals such as Mo/Cu/Ag and their alloys.
  • the first metal layer is patterned by a yellow photo-etching (dry etching) process to form a first electrode 3041 (sense electrode, RX) that is continuously conductive in the lateral direction and a second electrode 3042 (driving electrode, TX) that is isolated in the longitudinal direction.
  • the isolated second electrode 3042 is electrically connected to the lower bridge line 3021 through the first via hole 303a, thereby forming a longitudinally continuous second electrode 3042, as shown in FIG. 5C .
  • the third wire 3022 is electrically connected to a part of the first electrode 3041 through the second via hole 303b on the first passivation layer 303 .
  • the fourth wire 3023 is electrically connected to a part of the second electrode 3042 through the third via hole 303 c on the first passivation layer 303 .
  • a first wire connected to the first electrode 3041 and a second wire connected to the second electrode 3042 are formed.
  • the orthographic projection of the first wire on the touch layer and the orthographic projection of the third wire 3022 on the touch layer completely overlap and the third wire
  • a wire is electrically connected to the third wire one-to-one
  • the orthographic projection of the second wire on the touch layer completely overlaps with the orthographic projection of the fourth wire 3023 on the touch layer, and is electrically connected to the fourth wire one-to-one , so as to reduce the impedance of the peripheral traces connected to the first electrode 3041 and the second electrode 3042 .
  • the first wire and the third wire may be electrically connected to the first wire through the second via hole 303b, or may be electrically connected to the first wire through a via hole directly above the third wire 3022 and disposed on the first passivation layer 303.

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本申请提供一种触控显示装置，包括：有机发光二极管显示面板，有机发光二极管显示面板包括支撑柱以及阴极，部分阴极形成于支撑柱上；触控层，触控层包括绝缘层以及第一导电层，绝缘层上设置有凸起，部分第一导电层位于凸起远离阴极的一侧，凸起在触控显示装置上的正投影与支撑柱在触控显示装置上的正投影至少部分重合。

Description

触控显示装置 技术领域
本申请涉及触控显示技术领域，尤其涉及一种触控显示装置。
 背景技术
柔性有机发光二极管(Organic Light-Emitting Diode，OLED)显示器具有主动发光、可视角度大、色域宽、亮度高、响应速度快、低功耗以及结构上可弯曲等优点，柔性有机发光二极管显示器越来越受到市场的欢迎，逐渐取代液晶显示器成为显示技术的主流。
柔性有机发光二极管显示器按照其发光位置的不同分为顶发光型和底发光型两种。目前，顶发光型有机发光二极管显示器为有机发光二极管显示器量产技术的主流。如图1所示，其为传统柔性有机发光二极管显示器的示意图。传统柔性有机发光二极管显示器包括薄膜晶体管阵列（Thin Film Transistor Array，TFT Array）基板100、阳极（Anode）层101、像素定义层(Pixel Definition Layer，PDL)102、支撑柱（Photo Spacer，PS）103、有机发光层(Luminescence layer，EL)104、阴极(Cathode)层105、薄膜封装(Thin Film Encapsulation，TFE)层106以及位于薄膜封装层106上方的触控电极层107，触控电极层包括金属网格，金属网格由金属线1071组成。其中，支撑柱103按照一定规律分散设置在像素定义层102的上方，形成多个凸起，支撑柱103位于相邻发光子像素的像素定义层开孔的间隙位置处。支撑柱103主要用来在有机发光层蒸镀时，当形成有支撑柱103的基板与精细掩模板（Fine Metal Mask，FMM）接触时，支撑柱103与精细掩模板接触，从而有效防止基板上的金属线路等被精细掩模板刮伤。另外，由于阴极105是整面蒸镀，因此支撑柱103上的阴极105与位于薄膜封装层106表面的触控电极的距离相较于像素定义层102上表面的阴极105与位于薄膜封装层106表面的触控电极的距离更近，导致支撑柱103位置正上方的触控电极的寄生电容较大，从而影响该区域的触控灵敏度等性能。
因此，有必要提出一种技术方案以解决支撑柱上的阴极与触控电极之间的间距较小导致寄生电容较大而影响触控灵敏度等性能。
 技术问题
本申请的目的在于提供一种触控显示装置，以解决支撑柱上的阴极与触控电极之间的间距较小导致寄生电容较大而影响触控灵敏度等性能的问题。
 技术解决方案
为实现上述目的，本申请提供一种触控显示装置，所述触控显示装置包括：
有机发光二极管显示面板，所述有机发光二极管显示面板包括支撑柱以及阴极，部分所述阴极形成于所述支撑柱上；
触控层，所述触控层位于所述有机发光二极管显示面板的一侧，所述触控层包括绝缘层以及第一导电层，所述绝缘层上设置有凸起，部分所述第一导电层位于所述凸起远离所述阴极的一侧，所述凸起在所述触控显示装置上的正投影与所述支撑柱在所述触控显示装置上的正投影至少部分重合；
所述有机发光二极管显示面板还包括像素定义层，所述支撑柱设置于所述像素定义层上，部分所述阴极形成于所述像素定义层上，部分所述第一导电层形成于所述绝缘层上；
形成于所述像素定义层上的所述阴极与对应的所述第一导电层之间的间距等于形成于所述支撑柱上的所述阴极与设置于所述凸起远离所述阴极的一侧的所述第一导电层之间的间距；
所述触控层还包括第二导电层，所述绝缘层位于所述第一导电层和所述第二导电层之间，所述第二导电层包括桥接线，所述桥接线在所述触控显示装置上的正投影与所述支撑柱在所述触控显示装置上的正投影错开。
在上述触控显示装置中，所述凸起的高度等于所述支撑柱的高度。
在上述触控显示装置中，所述第一导电层包括第一电极以及第二电极，所述第一电极与所述第二电极电性绝缘，相邻两个所述第一电极连续形成，相邻两个所述第二电极通过所述桥接线电性连接，每个所述第二电极与所述桥接线通过所述绝缘层上的第一过孔电性连接。
在上述触控显示装置中，所述第一导电层还包括第一导线以及第二导线，所述第二导电层还包括第三导线以及第四导线，
所述第三导线与所述第一导线一对一电性连接，所述第三导线与部分所述第一电极通过所述绝缘层上的第二过孔电性连接；
所述第四导线与所述第二导线一对一电性连接，所述第四导线与部分所述第二电极通过所述绝缘层上的第三过孔电性连接。
在上述触控显示装置中，所述支撑柱在所述触控显示装置上的正投影位于所述凸起在所述触控显示装置上的正投影内，或，所述支撑柱在所述触控显示装置上的正投影与所述凸起在所述触控显示装置上的正投影完全重合。
在上述触控显示装置中，所述绝缘层包括无机绝缘层或有机绝缘层中的至少一种。
在上述触控显示装置中，所述有机发光二极管显示面板包括多个子像素，所述支撑柱设置于相邻两个所述子像素之间。
在上述触控显示装置中，所述有机发光二极管显示面板包括封装层，所述封装层设置于所述阴极和所述触控层之间。
一种触控显示装置，所述触控显示装置包括：
有机发光二极管显示面板，所述有机发光二极管显示面板包括支撑柱以及阴极，部分所述阴极形成于所述支撑柱上；
触控层，所述触控层位于所述有机发光二极管显示面板的一侧，所述触控层包括绝缘层以及第一导电层，所述绝缘层上设置有凸起，部分所述第一导电层位于所述凸起远离所述阴极的一侧，所述凸起在所述触控显示装置上的正投影与所述支撑柱在所述触控显示装置上的正投影至少部分重合。
在上述触控显示装置中，所述有机发光二极管显示面板还包括像素定义层，所述支撑柱设置于所述像素定义层上，部分所述阴极形成于所述像素定义层上，部分所述第一导电层形成于所述绝缘层上，
形成于所述像素定义层上的所述阴极与对应的所述第一导电层之间的间距等于形成于所述支撑柱上的所述阴极与设置于所述凸起远离所述阴极的一侧的所述第一导电层之间的间距。
在上述触控显示装置中，所述凸起的高度等于所述支撑柱的高度。
在上述触控显示装置中，所述触控层还包括第二导电层，所述绝缘层位于所述第一导电层和所述第二导电层之间，所述第二导电层包括桥接线，所述桥接线在所述触控显示装置上的正投影与所述支撑柱在所述触控显示装置上的正投影错开。
在上述触控显示装置中，所述第一导电层包括第一电极以及第二电极，所述第一电极与所述第二电极电性绝缘，相邻两个所述第一电极连续形成，相邻两个所述第二电极通过所述桥接线电性连接，每个所述第二电极与所述桥接线通过所述绝缘层上的第一过孔电性连接。
在上述触控显示装置中，所述第一导电层还包括第一导线以及第二导线，所述第二导电层包括第三导线以及第四导线，
所述第三导线与所述第一导线一对一电性连接，所述第三导线与部分所述第一电极通过所述绝缘层上的第二过孔电性连接；
所述第四导线与所述第二导线一对一电性连接，所述第四导线与部分所述第二电极通过所述绝缘层上的第三过孔电性连接。
在上述触控显示装置中，所述支撑柱在所述触控显示装置上的正投影位于所述凸起在所述触控显示装置上的正投影内，或，所述支撑柱在所述触控显示装置上的正投影与所述凸起在所述触控显示装置上的正投影完全重合。
在上述触控显示装置中，所述绝缘层包括无机绝缘层或有机绝缘层中的至少一种。
在上述触控显示装置中，所述有机发光二极管显示面板包括多个子像素，所述支撑柱设置于相邻两个所述子像素之间。
在上述触控显示装置中，所述有机发光二极管显示面板包括封装层，所述封装层设置于所述阴极和所述触控层之间。
 有益效果
本申请提供一种触控显示装置，触控显示装置包括：有机发光二极管显示面板，有机发光二极管显示面板包括支撑柱以及阴极，部分阴极形成于支撑柱上；触控层，触控层位于有机发光二极管显示面板的一侧，触控层包括绝缘层以及第一导电层，绝缘层上设置有凸起，部分第一导电层位于凸起远离阴极的一侧，凸起在触控显示装置上的正投影与支撑柱在触控显示装置上的正投影至少部分重合。通过在触控层的绝缘层上设置凸起，以增加支撑柱上的阴极与绝缘层上的凸起一侧的第一导电层之间的间距，从而减小对应支撑柱设置的第一导电层与支撑柱上的阴极之间的寄生电容，提高触控显示装置的触控报点率。
 附图说明
图1为传统柔性有机发光二极管显示器的示意图；
图2为本申请触控显示装置的截面示意图；
图3为图2所示触控显示装置的触控层的截面示意图；
图4为本申请金属网格环绕子像素设置及支撑柱的分布示意图；
图5A-5C为形成本申请触控层的过程示意图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
请参阅图2，其为本申请触控显示装置的截面示意图。触控显示装置包括有机发光二极管显示面板20以及触控层30。有机发光二极管显示面板20可以为柔性有机发光二极管显示面板，也可以为硬质有机发光二极管显示面板。触控层30位于有机发光二极管显示面板20的一侧。具体地，触控层30位于有机发光二极管显示面板20的出光侧。
有机发光二极管显示面板20包括基底200、薄膜晶体管阵列层、有机发光二极管阵列层以及封装层203。
薄膜晶体管阵列层包括多个阵列排布的薄膜晶体管。薄膜晶体管阵列层包括有源层2011、栅极绝缘层2012、栅极2013、第一绝缘层2014、图案化金属构件2015、第二绝缘层2016、源漏电极(20171，20172)、平坦化层2018、像素定义层2019以及支撑柱2020。
有源层2011设置于基底200上。有源层2011的制备材料为多晶硅。栅极绝缘层2012覆盖有源层2011以及基底200，栅极绝缘层2012的制备材料为氮化硅以及氧化硅中的至少一种，栅极绝缘层2012的厚度为800埃-1200埃。栅极2013设置于栅极绝缘层2012上且对应有源层2011设置，栅极2013的制备材料选自钼、铝、钛以及铜中的至少一种。第一绝缘层2014覆盖栅极2013以及栅极绝缘层2012，第一绝缘层2014的制备材料选自氮化硅或氧化硅中的至少一种。图案化金属构件2015设置于第一绝缘层2014上且对应栅极2013设置，图案化金属构件2015与栅极2013形成电容器，图案化金属构件2015在触控显示装置40上的正投影与栅极2013在触控显示装置40上的正投影完全重合，图案化金属构件2015的制备材料与栅极2013相同。第二绝缘层2016覆盖图案化金属构件2015以及第一绝缘层2014。源漏电极(20171，20172)包括源电极20171以及漏电极20172，源电极20171以及漏电极20172设置于第二绝缘层2016上，且源电极20171以及漏电极20172均通过贯穿第一绝缘层2014、第二绝缘层2016以及栅极绝缘层2012的过孔与有源层2011接触，且源电极20171以及漏电极20172分别对称地设置于栅极2013的相对两侧。平坦化层2018覆盖源漏电极（20171，20172）以及第二绝缘层2016，平坦化层2018为有机绝缘层，平坦化层2018的厚度为0.8微米-2.5微米。多个独立的阳极形成于平坦化层2018上。像素定义层2019覆盖多个独立的阳极2021以及平坦化层2018，像素定义层2019对应多个独立的阳极2021设置有多个开口，开口的纵截面为倒梯形。像素定义层2019为有机绝缘层，像素定义层2019的厚度为0.8微米-2.5微米，例如为2微米。
支撑柱2020设置于像素定义层2019上且位于像素定义层2019的相邻两个开口之间。支撑柱2020用于在向开口中蒸镀有机发光层的制程中支撑精细掩模板。支撑柱2020与像素定义层2019可以通过一道制程制备得到，例如利用同一个半色调掩膜板结合黄光制程制备得到。支撑柱2020的纵截面为梯形，支撑柱2020的横截面为圆形。支撑柱2020的高度为0.8微秒-1.2微秒，例如1微米。
有机发光二极管阵列层202包括阵列排布的有机发光二极管。有机发光二极管阵列层包括多个独立的阳极2021、设置于每个阳极2021上且位于开口中的有机发光层2022以及一个阴极2023，多个有机发光二极管共用一个阴极，且阴极2023通过蒸镀整面形成。部分阴极2023形成于支撑柱2020上，部分阴极2023形成于有机发光层2022上，部分阴极2023形成于像素定义层2019上。
封装层203设置于阴极2023和触控层30之间。封装层203为薄膜封装层。封装层203的厚度为6微米-14微米，例如10微米。封装层203用于避免阴极2023以及有机发光层2022为氧气或水蒸气等侵蚀。
如图3所示，其为图2所示触控显示装置的触控层的截面示意图。触控层包括缓冲层301、第二导电层302、第一钝化层303、第一导电层304以及第二钝化层305。
缓冲层301设置于封装层203上。缓冲层301的制备材料选自氮化硅以及氧化硅中的至少一种。
第二导电层302设置于缓冲层301上，第二导电层302包括桥接线3021，桥接线3021由金属线组成。桥接线3021按照一定规律分布。桥接线3021在触控显示装置上的正投影与支撑柱2020在触控显示装置上的正投影错开，以避免桥接线3021与支撑柱2020上的阴极2023之间形成寄生电容，从而提高触控报点率以及触控灵敏度等。
第一钝化层303为绝缘层。第一钝化层303位于第一导电层304和第二导电层302之间。第一钝化层303包括有机绝缘层或无机绝缘层中的至少一种。具体地，第一钝化层303包括有机绝缘层，有机绝缘层的厚度为0.8微米-1.2微米，例如1微米。
第一钝化层303上设置有凸起3031，部分第一导电层304形成于凸起3031远离阴极2023的一侧，部分第一导电层304形成于第一钝化层303上。凸起3031与第一钝化层303可以通过同一制程制备得到。凸起3031在触控显示装置上的正投影与支撑柱2020在触控显示装置上的正投影至少部分重合，以增加形成于支撑柱2020上的阴极2023与形成于凸起3031远离阴极2023一侧的第一导电层304之间的间距，从而减小凸起3031上的第一导电层304与形成于支撑柱2020上的阴极2023之间的寄生电容，提高触控报点率等。
需要说明的是，凸起3031在触控显示装置上的正投影与支撑柱2020在触控显示装置上的正投影至少部分重合中的“至少部分重合”是指“凸起3031在触控显示装置上的正投影”的至少一部分与“支撑柱2020在触控显示装置上的正投影”的至少一部分在同一个二维平面上的相同位置且形状和大小相同。下文中的正投影“完全重合”和正投影“完全重叠”是指投影的位置、形状以及大小完全相同。
在本实施例中，形成于像素定义层2019上的阴极2023与对应的第一导电层304（第一钝化层303上的第一导电层304）之间的间距等于形成于支撑柱2020上的阴极2023与设置于凸起3031上的第一导电层304之间的间距，通过使得像素定义层2019未设置支撑柱2020的位置的阴极与对应的第一导电层304之间的间距等于支撑柱2020上的阴极与凸起3031上的第一导电层304之间的距离，以使得不同位置的第一导电层304与阴极2023之间距离相同，避免寄生电容不同导致出现触控噪声，提高触控性能。
具体地，凸起3031的高度与支撑柱2020的高度相等，以使得像素定义层2019未设置支撑柱2020的位置的阴极2023与第一导电层304之间的间距等于支撑柱2020上的阴极2023与凸起3031上的第一导电层304之间的距离相等。
支撑柱2020在触控显示装置上的正投影位于凸起3031在触控显示装置上的正投影内，或，支撑柱2020在触控显示装置上的正投影与凸起3031在触控显示装置上的正投影完全重合，以使对应支撑柱2020设置的第一导电层304至支撑柱2020上的阴极2023的距离均增加。
在本实施例中，第一导电层304包括第一电极3041以及第二电极3042，第一电极3041与第二电极3042电性绝缘，相邻两个第一电极3041连续形成，相邻两个第二电极3042通过桥接线302电性连接，每个第二电极3042与桥接线302通过第一钝化层303上的第一过孔303a电性连接。
第二钝化层305覆盖第一导电层304以及第一钝化层303。第二钝化层305为绝缘层。
在本实施例中，第一电极3041、第二电极3042以及桥接线3021均由金属网格组成。金属网格由金属线组成。第一电极3041、第二电极3042以及桥接线3021对应设置有机发光二极管显示面板的显示区设置。
如图4所示，其为本申请金属网格环绕子像素设置及支撑柱的分布示意图。有机发光二极管显示面板包括多个子像素，触控层包括多个金属网格，每个金属网格环绕一个子像素设置，以避免金属线对子像素发出的光造成遮挡。支撑柱2020设置于相邻两个子像素之间，相邻两个支撑柱2020之间间隔2个子像素、4个子像素或8个子像素。多个金属网格包括矩形金属网格、菱形金属网格。子像素包括菱形子像素。
如图5A-5C所示，其为形成本申请触控层的过程示意图。触控层的形成步骤包括：
S100:首先，通过物理气相沉积形成整面的第二金属层，如Ti/Al/Ti，或者Mo/Cu/Ag等其他金属及其合金，通过黄光刻蚀(干刻)工艺图案化第二金属层，形成桥接线（Bridge）3021、第三导线3022以及第四导线3023，如5A所示。
S101:其次，形成覆盖桥接线（Bridge）3021、第三导线3022以及第四导线3023的第一钝化层303，采用黄光刻蚀(干刻)的工艺图案化第一钝化层，在桥接线3021的端点处形成第一过孔303a且在触控电极通道的端部形成相应的第二过孔303b以及第三过孔303c，其中第二过孔303b对应第三导线3022设置，第三过孔303c对应第四导线3023设置，如图5B所示。部分第一钝化层303上的过孔设置于第三导线3022的正上方。
S102:通过物理气相沉积在第一钝化层形成整面的第一金属层，第一金属层为Ti/Al/Ti，或者Mo/Cu/Ag等其他金属及其合金。通过黄光刻蚀(干刻)的工艺图案化第一金属层，形成横向连续导通的第一电极3041（感应电极，RX）以及纵向被隔离的第二电极3042（驱动电极，TX）。其中，被隔离的第二电极3042通过第一过孔303a与下方的桥接线3021电性连接导通，从而形成纵向连续导通的第二电极3042，如图5C所示。该步骤中，第三导线3022与部分第一电极3041通过第一钝化层303上的第二过孔303b电性连接。第四导线3023与部分第二电极3042通过第一钝化层303上的第三过孔303c电性连接。同时形成连接第一电极3041的第一导线以及连接第二电极3042的第二导线，第一导线在触控层上的正投影与第三导线3022在触控层上的正投影完全重叠且第一导线与第三导线一对一电性连接，第二导线在触控层上的正投影与第四导线3023在触控层上的正投完全重叠且与第四导线一对一电性连接，以降低与第一电极3041以及第二电极3042连接的外围走线的阻抗。第一导线与第三导线可以通过第二过孔303b电性连接，也可以通过位于第三导线3022正上方且设置于第一钝化层303上的过孔与第一导线电性连接。
以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (18)

  1. 一种触控显示装置，其中，所述触控显示装置包括：
    有机发光二极管显示面板，所述有机发光二极管显示面板包括支撑柱以及阴极，部分所述阴极形成于所述支撑柱上；
    触控层，所述触控层位于所述有机发光二极管显示面板的一侧，所述触控层包括绝缘层以及第一导电层，所述绝缘层上设置有凸起，部分所述第一导电层位于所述凸起远离所述阴极的一侧，所述凸起在所述触控显示装置上的正投影与所述支撑柱在所述触控显示装置上的正投影至少部分重合；
    所述有机发光二极管显示面板还包括像素定义层，所述支撑柱设置于所述像素定义层上，部分所述阴极形成于所述像素定义层上，部分所述第一导电层形成于所述绝缘层上；
    形成于所述像素定义层上的所述阴极与对应的所述第一导电层之间的间距等于形成于所述支撑柱上的所述阴极与设置于所述凸起远离所述阴极的一侧的所述第一导电层之间的间距；
    所述触控层还包括第二导电层，所述绝缘层位于所述第一导电层和所述第二导电层之间，所述第二导电层包括桥接线，所述桥接线在所述触控显示装置上的正投影与所述支撑柱在所述触控显示装置上的正投影错开。
  2. 根据权利要求1所述的触控显示装置，其中，所述凸起的高度等于所述支撑柱的高度。
  3. 根据权利要求1所述的触控显示装置，其中，所述第一导电层包括第一电极以及第二电极，所述第一电极与所述第二电极电性绝缘，相邻两个所述第一电极连续形成，相邻两个所述第二电极通过所述桥接线电性连接，每个所述第二电极与所述桥接线通过所述绝缘层上的第一过孔电性连接。
  4. 根据权利要求3所述的触控显示装置，其中，所述第一导电层还包括第一导线以及第二导线，所述第二导电层还包括第三导线以及第四导线，
    所述第三导线与所述第一导线一对一电性连接，所述第三导线与部分所述第一电极通过所述绝缘层上的第二过孔电性连接；
    所述第四导线与所述第二导线一对一电性连接，所述第四导线与部分所述第二电极通过所述绝缘层上的第三过孔电性连接。
  5. 根据权利要求1所述的触控显示装置，其中，所述支撑柱在所述触控显示装置上的正投影位于所述凸起在所述触控显示装置上的正投影内，或，所述支撑柱在所述触控显示装置上的正投影与所述凸起在所述触控显示装置上的正投影完全重合。
  6. 根据权利要求1所述的触控显示装置，其中，所述绝缘层包括无机绝缘层或有机绝缘层中的至少一种。
  7. 根据权利要求1所述的触控显示装置，其中，所述有机发光二极管显示面板包括多个子像素，所述支撑柱设置于相邻两个所述子像素之间。
  8. 根据权利要求1所述的触控显示装置，其中，所述有机发光二极管显示面板包括封装层，所述封装层设置于所述阴极和所述触控层之间。
  9. 一种触控显示装置，其中，所述触控显示装置包括：
    有机发光二极管显示面板，所述有机发光二极管显示面板包括支撑柱以及阴极，部分所述阴极形成于所述支撑柱上；
    触控层，所述触控层位于所述有机发光二极管显示面板的一侧，所述触控层包括绝缘层以及第一导电层，所述绝缘层上设置有凸起，部分所述第一导电层位于所述凸起远离所述阴极的一侧，所述凸起在所述触控显示装置上的正投影与所述支撑柱在所述触控显示装置上的正投影至少部分重合。
  10. 根据权利要求9所述的触控显示装置，其中，所述有机发光二极管显示面板还包括像素定义层，所述支撑柱设置于所述像素定义层上，部分所述阴极形成于所述像素定义层上，部分所述第一导电层形成于所述绝缘层上，
    形成于所述像素定义层上的所述阴极与对应的所述第一导电层之间的间距等于形成于所述支撑柱上的所述阴极与设置于所述凸起远离所述阴极的一侧的所述第一导电层之间的间距。
  11. 根据权利要求9所述的触控显示装置，其中，所述凸起的高度等于所述支撑柱的高度。
  12. 根据权利要求9所述的触控显示装置，其中，所述触控层还包括第二导电层，所述绝缘层位于所述第一导电层和所述第二导电层之间，所述第二导电层包括桥接线，所述桥接线在所述触控显示装置上的正投影与所述支撑柱在所述触控显示装置上的正投影错开。
  13. 根据权利要求12所述的触控显示装置，其中，所述第一导电层包括第一电极以及第二电极，所述第一电极与所述第二电极电性绝缘，相邻两个所述第一电极连续形成，相邻两个所述第二电极通过所述桥接线电性连接，每个所述第二电极与所述桥接线通过所述绝缘层上的第一过孔电性连接。
  14. 根据权利要求13所述的触控显示装置，其中，所述第一导电层还包括第一导线以及第二导线，所述第二导电层还包括第三导线以及第四导线，
    所述第三导线与所述第一导线一对一电性连接，所述第三导线与部分所述第一电极通过所述绝缘层上的第二过孔电性连接；
    所述第四导线与所述第二导线一对一电性连接，所述第四导线与部分所述第二电极通过所述绝缘层上的第三过孔电性连接。
  15. 根据权利要求9所述的触控显示装置，其中，所述支撑柱在所述触控显示装置上的正投影位于所述凸起在所述触控显示装置上的正投影内，或，所述支撑柱在所述触控显示装置上的正投影与所述凸起在所述触控显示装置上的正投影完全重合。
  16. 根据权利要求9所述的触控显示装置，其中，所述绝缘层包括无机绝缘层或有机绝缘层中的至少一种。
  17. 根据权利要求9所述的触控显示装置，其中，所述有机发光二极管显示面板包括多个子像素，所述支撑柱设置于相邻两个所述子像素之间。
  18. 根据权利要求9所述的触控显示装置，其中，所述有机发光二极管显示面板包括封装层，所述封装层设置于所述阴极和所述触控层之间。
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