Nothing Special   »   [go: up one dir, main page]

WO2022068562A1 - Bulk acoustic resonator, doping concentration determination method, filter, and electronic device - Google Patents

Bulk acoustic resonator, doping concentration determination method, filter, and electronic device Download PDF

Info

Publication number
WO2022068562A1
WO2022068562A1 PCT/CN2021/117934 CN2021117934W WO2022068562A1 WO 2022068562 A1 WO2022068562 A1 WO 2022068562A1 CN 2021117934 W CN2021117934 W CN 2021117934W WO 2022068562 A1 WO2022068562 A1 WO 2022068562A1
Authority
WO
WIPO (PCT)
Prior art keywords
resonator
doping concentration
thickness ratio
filter
layer thickness
Prior art date
Application number
PCT/CN2021/117934
Other languages
French (fr)
Chinese (zh)
Inventor
庞慰
徐洋
杨清瑞
张孟伦
Original Assignee
诺思(天津)微系统有限责任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 诺思(天津)微系统有限责任公司 filed Critical 诺思(天津)微系统有限责任公司
Publication of WO2022068562A1 publication Critical patent/WO2022068562A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material

Definitions

  • Embodiments of the present disclosure relate to the field of semiconductors, and in particular, to a bulk acoustic wave resonator and a method for determining doping concentration, as well as a filter and an electronic device.
  • thin film bulk acoustic resonator As a new type of MEMS device, thin film bulk acoustic resonator (FBAR) has the advantages of small size, light weight, low insertion loss, high frequency bandwidth and high quality factor, which is well adapted to the replacement of wireless communication systems.
  • the area of the resonator will decrease, and the area of the resonator will decrease.
  • the area of the resonator will decrease.
  • the present disclosure is made to alleviate or solve at least one aspect of the above-mentioned problems in the prior art.
  • a bulk acoustic wave resonator comprising:
  • the piezoelectric layer being a piezoelectric layer including a doping element having a corresponding doping concentration
  • the resonant frequency of the resonator is higher than 2.5GHz, and has a layer thickness ratio E/P;
  • Embodiments of the present disclosure also relate to a method for determining a doping concentration, where the doping concentration is a doping concentration of a doping element of a piezoelectric layer of a bulk acoustic wave resonator, the resonator has an electromechanical coupling coefficient Kt 2 , so The resonant frequency of the resonator is higher than 2.5GHz and has a layer thickness ratio E/P, and the method includes the steps:
  • Embodiments of the present disclosure also relate to a filter comprising the resonator described above.
  • Embodiments of the present disclosure also relate to an electronic device including the above-mentioned filter or the above-mentioned resonator.
  • FIG. 1 is a schematic cross-sectional view of a bulk acoustic wave resonator
  • FIG. 2 is a graph exemplarily showing the relationship between the E/P value and the width of the raised structure and the Q value of the resonator;
  • FIG. 3 exemplarily shows the relationship between the width of the raised structure and the Q value of the resonator
  • Fig. 4 exemplarily shows the relationship diagram of E/P value and Kt 2 ;
  • FIG. 15 exemplarily shows a graph of the E/P value versus the area of the resonator for a Kt 2 of 5.9%;
  • Figure 1 shows a cross-sectional view of a typical sandwich-structured BAW resonator.
  • the reference numerals are described as follows:
  • Substrate, optional materials are single crystal silicon, gallium nitride, gallium arsenide, sapphire, quartz, silicon carbide, diamond, etc.
  • Acoustic mirror which can be a cavity, or a Bragg reflector and other equivalent forms.
  • the embodiment of the present disclosure adopts the form of a cavity.
  • Bottom electrode (including bottom electrode pins), the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or their alloys.
  • Piezoelectric layer which can be a single crystal piezoelectric material, optional, such as: single crystal aluminum nitride, single crystal gallium nitride, single crystal lithium niobate, single crystal lead zirconate titanate (PZT), single crystal Potassium niobate, single crystal quartz film, or single crystal lithium tantalate and other materials can also be polycrystalline piezoelectric materials (corresponding to single crystal, non-single crystal materials), optional, such as polycrystalline aluminum nitride, Zinc oxide, PZT, etc., can also be a rare earth element doped material containing a certain atomic ratio of the above materials, for example, can be doped aluminum nitride, and doped aluminum nitride contains at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium
  • Top electrode (including top electrode pins), the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or their alloys.
  • Passivation layer or process layer which can be aluminum nitride, silicon nitride or silicon dioxide, etc.
  • the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the above metals or their alloys.
  • the electromechanical coupling coefficient Kt 2 is related to the value of the layer thickness ratio E/P and the doping concentration of the doping element in the piezoelectric layer.
  • the Q value of the bulk acoustic wave resonator is related to the value of the layer thickness ratio E/P.
  • the area of the resonator (referring to the area of the effective area of the resonator, and the effective area refers to the area formed by the overlapping portion of the top electrode, the piezoelectric layer, the bottom electrode and the acoustic mirror of the resonator in the thickness direction of the resonator) is in
  • the electromechanical coupling coefficient of the resonator is fixed, it decreases as the resonant frequency of the resonator increases.
  • the present disclosure proposes a method to maintain Kt 2 stable by selecting a doping concentration lower than a doping concentration based on a specific layer thickness ratio (ie, setting an upper limit value of the doping concentration), and making the area of the resonator In a relatively small case, the power capacity problem caused by the small unit area of the resonator is alleviated or eliminated.
  • the present disclosure may further define the lower limit of the layer thickness ratio, and improve the performance of the resonator based on the layer thickness ratio higher than the lower limit of the layer thickness ratio.
  • the layer thickness ratio E/P is briefly described below.
  • the thickness of the bottom electrode 103 is t1
  • the thickness of the piezoelectric layer 104 is t2
  • the thickness of the top electrode 105 is t3
  • the thickness of the passivation layer 106 above the top electrode is t4 .
  • the ratio of the electrode thickness to the piezoelectric layer thickness that is, the layer thickness ratio E/P, is defined as (t1+t3)/t2.
  • the ratio of the electrode thickness to the piezoelectric layer thickness is defined, that is, the layer thickness ratio E/P is (t1+t3+t4*a)/t2, where a and the passivation layer 106 resonate
  • the rate of influence of the frequency Fs is related to the ratio of the rate of influence of the top electrode 105 to the resonant frequency Fs.
  • the rate of influence of the thickness of the passivation layer 106 on the resonant frequency Fs of the resonator is V1 nm/MHz, and the thickness of the top electrode 105
  • the doping concentration of the element doped in the piezoelectric layer is briefly described below.
  • Doping means that a portion of one or more elements in the original undoped piezoelectric material is replaced by a doping element.
  • the doping concentration is defined as: in a unit volume, the atomic number of the doping element, and the total atomic number of the above-mentioned one or more elements partially replaced by the doping element and the atomic number of the doping element and the ratio.
  • the piezoelectric layer is aluminum nitride and the doping element is scandium
  • the doping concentration is the ratio of the number of scandium atoms to the sum of the number of aluminum atoms and scandium atoms per unit volume. (Sc/Al+Sc).
  • FIG. 2 is a graph exemplarily showing the relationship between the layer thickness ratio E/P value and the convex structure width and the Q value of the resonator.
  • the ordinate is the Q value of the resonator
  • the abscissa has two layers
  • the first layer is the layer thickness ratio E/P of the resonator
  • the second layer is the width L (unit is ⁇ m) of the protruding structure 107 .
  • FIG. 2 exemplarily shows the resonator Q value of the Band1TX frequency band (1920-1980 MHz) as a function of the layer thickness ratio E/P.
  • FIG. 2 exemplarily shows the Q-values of the resonator at different protrusion structure widths L under different layer thickness ratios E/P.
  • the layer thickness ratio E/P is less than 1, the peaks of the two corresponding Q values in FIG. 3 both deteriorate as the layer thickness ratio E/P becomes smaller.
  • the value of the layer thickness ratio E/P can directly affect the Q value of the resonator.
  • the value of the layer thickness ratio E/P should not be lower than 0.75.
  • FIG. 4 exemplarily shows the relationship between the E/P value and Kt 2 , wherein the abscissa is the E/P value and the ordinate is Kt 2 . More specifically, FIG. 4 exemplarily shows the change of kt 2 with the layer thickness ratio E/P when the piezoelectric layer is a piezoelectric layer of aluminum nitride doped with metal scandium element and the doping concentration is 8.2%. It can be seen that kt 2 increases as the layer thickness ratio E/P decreases. However, on the premise that the resonator performance is not seriously deteriorated, it is concluded from Fig. 2 that kt 2 cannot be improved by infinitely reducing the E/P value.
  • 5-14 exemplarily show graphs of doping concentration versus Kt 2 , where the abscissa is the doping concentration and the ordinate is Kt 2 . It can be seen that Kt 2 increases as the doping concentration increases.
  • a higher value of the layer thickness ratio E/P can be selected, for example, the value of the layer thickness ratio E/P should not be lower than 0.75 to ensure a higher Q value of the resonator (but at this time Kt 2 cannot reach performance requirements or not fully satisfied), at the same time, the Kt 2 is increased to meet the performance requirements or improve the performance by selecting a doping concentration above a predetermined value. Therefore, on the premise of ensuring the resonator performance (higher Q value), kt 2 can be increased by increasing the doping concentration.
  • Kt 2 is related to the value of the layer thickness ratio E/P and the doping concentration, and the E/P value is limited by the lower limit (as explained before, not less than 0.75), even if it is desired that the larger the Kt 2 , the better, Kt 2 also has an upper limit, which is determined by the lower limit of E/P, 0.75.
  • the kt 2 of the resonator can be increased by selecting the doping concentration.
  • the resonator with kt 2 selected there is a better range of doping concentration determined by the E/P value to ensure the high performance of the resonator.
  • the thickness t2 of the piezoelectric layer becomes smaller with kt2 fixed.
  • the area of the 50 ⁇ resonator becomes smaller.
  • the area of the 50 ⁇ resonator at 1.75GHz is about 21000 ⁇ m 2
  • the area of the 50 ⁇ resonator at 3.5GHz is about 5200 ⁇ m 2 .
  • FIG. 15 exemplarily shows a graph of the layer thickness ratio E/P value versus the area of the resonator, where Kt 2 is 5.9%.
  • the vertical axis is the area of the resonator in ⁇ m 2
  • the horizontal axis is the E/P value. Therefore, for a fixed Kt 2 , based on what is shown in FIG. 15 , the area of the resonator can be increased by reducing the layer thickness ratio E/P.
  • Kt 2 increases with the doping concentration unchanged.
  • Kt 2 decreases as the doping concentration decreases.
  • the layer thickness ratio E/P can be reduced to increase the area, while reducing the doping concentration to keep the Kt 2 of the resonator stable (ie unchanged). Or float by 5% relative to the original value, in the embodiment of the present disclosure, take the same as an example for illustration).
  • the value of the layer thickness ratio E/P is selected to be not greater than 3 and the upper limit value of the doping concentration is determined based on the E/P value.
  • the area of the resonator can be increased by reducing the E/P value. It is also necessary to set the doping concentration in an optimal range, and the upper limit of the optimal range is determined based on the smaller value of the layer thickness ratio E/P (3 in the present disclosure), so that both Increasing the area of the resonator (by choosing a smaller E/P value) also keeps Kt 2 stable by choosing a smaller doping concentration value corresponding to that E/P value.
  • the present disclosure also proposes a method for determining a doping concentration of a piezoelectric layer of a bulk acoustic wave resonator, where the piezoelectric layer of the resonator is a piezoelectric layer including a doping element, and the doping element has a corresponding doping concentration.
  • y corresponds to Kt 2
  • x corresponds to the doping concentration a1.
  • the E/P value in order to keep the Q value of the resonator at a relatively high value, the E/P value is not less than 0.75.
  • y corresponds to Kt 2
  • x corresponds to doping concentration b2.
  • the above resonators (selecting a suitable doping concentration based on the layer thickness ratio E/P to increase the resonator area while keeping Kt 2 stable) can also be used in filters.
  • the filter is a filter in a frequency band of 2.515GHz-2.675GHz or a frequency band of 3.3GHz-3.6GHz; and the range of the doping concentration of the resonator in the filter is 14.4 %-26.5%. Further, the doping concentration of the resonator in the filter ranges from 15.7% to 26.5%.
  • the filter is a filter in the frequency band of 4.8GHz-4.96GHz; and the doping concentration of the resonator in the filter ranges from 1% to 12.4%. Further, the doping concentration of the resonator in the filter ranges from 2.6% to 12.4%.
  • the filter is a filter in the frequency band of 5.15GHz-5.85GHz; and the doping concentration of the resonator in the filter ranges from 28.5% to 37%. Further, the doping concentration of the resonator in the filter ranges from 28.8% to 37%.
  • the upper limit value of the doping concentration of the piezoelectric layer of the resonator is selected based on the value of the selected layer thickness ratio E/P, so that the Kt 2 of the resonator can be guaranteed to be stable.
  • the resonator has a larger area.
  • the lower limit value of the doping concentration of the piezoelectric layer of the resonator can also be selected based on the value of the selected layer thickness ratio E/P, which also ensures that the resonator has a higher Q value.
  • the present disclosure provides an effective guiding solution for how to select the doping concentration of the doping element of the piezoelectric layer to obtain a larger resonator area.
  • the material of the piezoelectric layer is not limited to aluminum nitride, but can also be other piezoelectric materials listed in the present disclosure
  • the doping element is not limited to scandium metal, and can also be used in the present disclosure. Other doped metal elements listed.
  • the aluminum nitride doped scandium element is used as an example to illustrate how to determine the upper limit value or the upper limit of the doping concentration of the piezoelectric layer of the resonator based on the value of the selected layer thickness ratio E/P lower limit.
  • each numerical range except that it is explicitly stated that it does not include the endpoint value, may be the endpoint value, but also the middle value of each numerical range, and these are all within the protection scope of the present disclosure. .
  • BAW resonators can be used to form other semiconductor devices besides filters.
  • a bulk acoustic wave resonator comprising:
  • the piezoelectric layer being a piezoelectric layer including a doping element having a corresponding doping concentration
  • the resonant frequency of the resonator is higher than 2.5GHz, and has a layer thickness ratio E/P;
  • the piezoelectric layer is an aluminum nitride layer doped with scandium, and a1 is determined by the following formula:
  • Kt 2 0.2977a1 2 +0.2085a1+0.033.
  • the resonant frequency of the resonator is higher than 3.0GHz;
  • the piezoelectric layer is an aluminum nitride layer doped with scandium, and a3 is determined by the following formula:
  • Kt 2 0.3093a2 2 +0.2149a2+0.0342.
  • the resonant frequency of the resonator is higher than 3.5GHz
  • the piezoelectric layer is an aluminum nitride layer doped with scandium, and a3 is determined by the following formula:
  • Kt 2 0.3437a3 2 +0.2137a3+0.0364.
  • the resonant frequency of the resonator is higher than 4GHz
  • the piezoelectric layer is an aluminum nitride layer doped with scandium, and a4 is determined by the following formula:
  • Kt 2 0.3508a4 2 +0.2213a4+0.0378.
  • the resonant frequency of the resonator is higher than 4.5GHz
  • the piezoelectric layer is an aluminum nitride layer doped with scandium, and a5 is determined by the following formula:
  • the resonant frequency of the resonator is higher than 5GHz
  • the piezoelectric layer is an aluminum nitride layer doped with scandium, and a6 is determined by the following formula:
  • Kt 2 0.407a6 2 +0.2315a6+0.0421.
  • the resonant frequency of the resonator is higher than 6 GHz;
  • the piezoelectric layer is an aluminum nitride layer doped with scandium, and a7 is determined by the following formula:
  • Kt 2 0.4801a7 2 +0.2157a7+0.0461.
  • the piezoelectric layer is an aluminum nitride layer doped with scandium, and b1 is determined by the following formula:
  • Kt 2 0.3909b1 2 +0.3056b1+0.062.
  • the piezoelectric layer is an aluminum nitride layer doped with scandium, and b2 is determined by the following formula:
  • Kt 2 0.4463b2 2 +0.2869b2+0.0603.
  • the piezoelectric layer is an aluminum nitride layer doped with scandium, and b3 is determined by the following formula:
  • Kt 2 0.4147b3 2 +0.2774b3+0.057.
  • a filter comprising a plurality of bulk acoustic wave resonators according to any one of 1-20.
  • the filter is a filter in the frequency band 2.515GHz-2.675GHz or in the frequency band 3.3GHz-3.6GHz;
  • the doping concentration of the resonators in the filter ranges from 14.4% to 26.5%.
  • the doping concentration of the resonators in the filter ranges from 15.7% to 26.5%.
  • the filter is a filter in the 4.8GHz-4.96GHz frequency band.
  • the doping concentration of the resonators in the filter ranges from 1% to 12.4%.
  • the doping concentration of the resonators in the filter ranges from 2.6% to 12.4%.
  • the filter is a filter in the 5.15GHz-5.85GHz frequency band.
  • the doping concentration of the resonators in the filter ranges from 28.5% to 37%.
  • the doping concentration of the resonators in the filter ranges from 28.8% to 37%.
  • a method for determining a doping concentration wherein the doping concentration is the doping concentration of a doping element of a piezoelectric layer of a bulk acoustic wave resonator, the resonator has an electromechanical coupling coefficient Kt 2 , and the resonance of the resonator is The frequency is higher than 2.5GHz and has a layer thickness ratio E/P, the method comprises the steps:
  • the piezoelectric layer is an aluminum nitride layer doped with scandium, and a1 is determined by the following formula:
  • Kt 2 0.2977a1 2 +0.2085a1+0.033.
  • the piezoelectric layer is an aluminum nitride layer doped with scandium, and b1 is determined by the following formula:
  • Kt 2 0.3909b1 2 +0.3056b1+0.062.
  • An electronic device comprising the filter according to any one of 21-27, or the bulk acoustic wave resonator according to any one of 1-20.
  • the electronic equipment here includes but is not limited to intermediate products such as RF front-end, filter and amplifier modules, and terminal products such as mobile phones, WIFI, and drones.

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

The present disclosure relates to a bulk acoustic resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a piezoelectric layer, the piezoelectric layer being a piezoelectric layer comprising a doping element, the doping element having a corresponding doping concentration; and a top electrode,wherein the resonator has at resonance frequency higher than 2.5 GHz, and has a layer thickness ratio E/P; the resonator has an electromechanical coupling coefficient Kt2; and the doping concentration is less than a1, a1 being a doping concentration corresponding to the electromechanical coupling coefficient Kt2 when the layer thickness ratio E/P = 3. The present disclosure also relates to a doping concentration determination method, the doping concentration being a doping concentration of a doping element of a piezoelectric layer of a bulk acoustic resonator, the resonator having an electromechanical coupling coefficient Kt2, the resonator having a resonant frequency higher than 2.5 GHz and having a layer thickness ratio E/P, the method comprising the steps of: on the basis of the layer thickness ratio E/P, selecting the doping concentration to be less than a1, a1 being a doping concentration corresponding to the electromechanical coupling coefficient Kt2 when the layer thickness ratio of the resonator E/P = 3. The present disclosure also relates to a filter and an electronic device.

Description

体声波谐振器、掺杂浓度确定方法、滤波器及电子设备Bulk acoustic wave resonator, method for determining doping concentration, filter and electronic device 技术领域technical field
本公开的实施例涉及半导体领域，尤其涉及一种体声波谐振器及掺杂浓度确定方法，以及一种滤波器和一种电子设备。Embodiments of the present disclosure relate to the field of semiconductors, and in particular, to a bulk acoustic wave resonator and a method for determining doping concentration, as well as a filter and an electronic device.
背景技术Background technique
随着5G通信技术的发展，通信技术对滤波器的大带宽提出了越来越高的要求。在这种前提下，滤波器的设计就对具有更大有效机电耦合系数(kt 2)的谐振器提出了迫切需求。 With the development of 5G communication technology, the communication technology puts forward higher and higher requirements for the large bandwidth of the filter. Under this premise, the design of the filter places an urgent need for a resonator with a larger effective electromechanical coupling coefficient (kt 2 ).
薄膜体声波谐振器(FBAR)作为一种新型的MEMS器件，具有体积小、质量轻、插入损耗低、频带宽以及品质因子高等优点，很好地适应了无线通信系统的更新换代。As a new type of MEMS device, thin film bulk acoustic resonator (FBAR) has the advantages of small size, light weight, low insertion loss, high frequency bandwidth and high quality factor, which is well adapted to the replacement of wireless communication systems.
现有技术中，仍然有在保持谐振器的kt 2较大的情况下还提高谐振器的Q值的需求。 In the prior art, there is still a need to increase the Q value of the resonator while keeping the kt 2 of the resonator relatively large.
此外，随着谐振器的频率提高，在Kt 2固定的情况下，谐振器的面积会减小，而谐振器面积减小，虽然有利于谐振器乃至滤波器的小型化，但是，谐振器的面积过小，在谐振器的功率较大的情况下，会出现谐振器的单位面积的功率容量问题。当单颗谐振器应当承受的功率一定时，面积越小时功率密度则越高，因此谐振器越容易烧毁。 In addition, as the frequency of the resonator increases, when Kt is fixed, the area of the resonator will decrease, and the area of the resonator will decrease. Although it is beneficial to the miniaturization of the resonator and even the filter, the If the area is too small, when the power of the resonator is large, the problem of the power capacity per unit area of the resonator will occur. When the power that a single resonator should withstand is constant, the smaller the area, the higher the power density, so the resonator is easier to burn.
因此，现有技术中，也有在保持频率较高的谐振器的kt 2较大的情况下使得其面积不会过小的需求。 Therefore, in the prior art, there is also a need to keep the area of the resonator with a higher frequency from being too small under the condition that the kt 2 of the resonator with a higher frequency is kept large.
发明内容SUMMARY OF THE INVENTION
为缓解或解决现有技术中的上述问题的至少一个方面，提出本公开。The present disclosure is made to alleviate or solve at least one aspect of the above-mentioned problems in the prior art.
根据本公开的实施例的一个方面，提出了一种体声波谐振器，包括：According to an aspect of the embodiments of the present disclosure, a bulk acoustic wave resonator is proposed, comprising:
基底；base;
声学镜；acoustic mirror;
底电极；bottom electrode;
压电层，所述压电层为包括掺杂元素的压电层，所述掺杂元素具有对应的掺杂浓度；和a piezoelectric layer, the piezoelectric layer being a piezoelectric layer including a doping element having a corresponding doping concentration; and
顶电极，top electrode,
其中：in:
所述谐振器的谐振频率高于2.5GHz，且具有层厚比E/P；The resonant frequency of the resonator is higher than 2.5GHz, and has a layer thickness ratio E/P;
所述谐振器具有机电耦合系数Kt 2，所述掺杂浓度小于a1，a1为层厚比E/P＝3时所述机电耦合系数Kt 2对应的掺杂浓度。 The resonator has an electromechanical coupling coefficient Kt 2 , the doping concentration is less than a1, and a1 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the layer thickness ratio E/P=3.
本公开的实施例也涉及一种掺杂浓度确定方法，所述掺杂浓度为体声波谐振器的压电层的掺杂元素的掺杂浓度，所述谐振器具有机电耦合系数Kt 2，所述谐振器的谐振频率高于2.5GHz且具有层厚比E/P，所述方法包括步骤： Embodiments of the present disclosure also relate to a method for determining a doping concentration, where the doping concentration is a doping concentration of a doping element of a piezoelectric layer of a bulk acoustic wave resonator, the resonator has an electromechanical coupling coefficient Kt 2 , so The resonant frequency of the resonator is higher than 2.5GHz and has a layer thickness ratio E/P, and the method includes the steps:
基于层厚比E/P，选择所述掺杂浓度小于a1，a1为谐振器层厚比E/P＝3时所述机电耦合系数Kt 2对应的掺杂浓度。 Based on the layer thickness ratio E/P, the doping concentration is selected to be less than a1, and a1 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=3.
本公开的实施例还涉及一种滤波器，包括上述的谐振器。Embodiments of the present disclosure also relate to a filter comprising the resonator described above.
本公开的实施例也涉及一种电子设备，包括上述的滤波器或者上述的谐振器。Embodiments of the present disclosure also relate to an electronic device including the above-mentioned filter or the above-mentioned resonator.
附图说明Description of drawings
以下描述与附图可以更好地帮助理解本公开所公布的各种实施例中的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：These and other features and advantages of the various embodiments disclosed in this disclosure may be better understood by the following description and accompanying drawings, wherein like reference numerals refer to like parts throughout, wherein:
图1为体声波谐振器的示意性截面图；1 is a schematic cross-sectional view of a bulk acoustic wave resonator;
图2为示例性示出E/P值和凸起结构宽度与谐振器的Q值之间的关系图；FIG. 2 is a graph exemplarily showing the relationship between the E/P value and the width of the raised structure and the Q value of the resonator;
图3示例性示出了凸起结构的宽度与谐振器的Q值之间的关系图；FIG. 3 exemplarily shows the relationship between the width of the raised structure and the Q value of the resonator;
图4示例性示出了E/P值与Kt 2的关系图； Fig. 4 exemplarily shows the relationship diagram of E/P value and Kt 2 ;
图5示例性示出了E/P＝3的情况下，掺杂浓度与Kt 2的关系图； FIG. 5 exemplarily shows the relationship between doping concentration and Kt 2 in the case of E/P=3;
图6示例性示出了E/P＝2.8的情况下，掺杂浓度与Kt 2的关系图； FIG. 6 exemplarily shows the relationship between doping concentration and Kt 2 in the case of E/P=2.8;
图7示例性示出了E/P＝2.6的情况下，掺杂浓度与Kt 2的关系图； FIG. 7 exemplarily shows the relationship between doping concentration and Kt 2 in the case of E/P=2.6;
图8示例性示出了E/P＝2.4的情况下，掺杂浓度与Kt 2的关系图； FIG. 8 exemplarily shows the relationship between doping concentration and Kt 2 in the case of E/P=2.4;
图9示例性示出了E/P＝2.2的情况下，掺杂浓度与Kt 2的关系图； FIG. 9 exemplarily shows the relationship between doping concentration and Kt 2 in the case of E/P=2.2;
图10示例性示出了E/P＝2的情况下，掺杂浓度与Kt 2的关系图； FIG. 10 exemplarily shows the relationship between doping concentration and Kt 2 in the case of E/P=2;
图11示例性示出了E/P＝1.8的情况下，掺杂浓度与Kt 2的关系图； FIG. 11 exemplarily shows the relationship between doping concentration and Kt 2 in the case of E/P=1.8;
图12示例性示出了E/P＝1.0的情况下，掺杂浓度与Kt 2的关系图； FIG. 12 exemplarily shows the relationship between doping concentration and Kt 2 in the case of E/P=1.0;
图13示例性示出了E/P＝0.85的情况下，掺杂浓度与Kt 2的关系图； FIG. 13 exemplarily shows the relationship between doping concentration and Kt 2 in the case of E/P=0.85;
图14示例性示出了E/P＝0.75的情况下，掺杂浓度与Kt 2的关系图； FIG. 14 exemplarily shows the relationship between doping concentration and Kt 2 in the case of E/P=0.75;
图15示例性示出了在Kt 2为5.9％的情况下E/P值与谐振器的面积的关系图； FIG. 15 exemplarily shows a graph of the E/P value versus the area of the resonator for a Kt 2 of 5.9%;
图16示例性示出了频率为3.5GHz的谐振器，在Kt 2＝5.9％的情况下掺杂浓度与谐振器面积的关系；和 Figure 16 exemplarily shows doping concentration versus resonator area for a frequency of 3.5 GHz for a resonator with Kt 2 =5.9%; and
图17示例性示出了频率为1.75GHz的谐振器，在Kt 2＝5.9％的情况下掺杂浓度与谐振器面积的关系。 FIG. 17 exemplarily shows doping concentration versus resonator area for a resonator at a frequency of 1.75 GHz with Kt 2 =5.9%.
具体实施方式Detailed ways
下面通过实施例，并结合附图，对本公开的技术方案作进一步具体的说明。下述参照附图对本公开实施方式的说明旨在对本公开的总体公开构思进行解释，而不应当理解为对本公开的一种限制。The technical solutions of the present disclosure will be further specifically described below through the embodiments and in conjunction with the accompanying drawings. The following description of the embodiments of the present disclosure with reference to the accompanying drawings is intended to explain the general disclosed concept of the present disclosure, and should not be construed as a limitation of the present disclosure.
图1示出了典型的三明治结构的体声波谐振器的截面图。图1中，附图标记说明如下：Figure 1 shows a cross-sectional view of a typical sandwich-structured BAW resonator. In Figure 1, the reference numerals are described as follows:
101：基底，可选材料为单晶硅、氮化镓、砷化镓、蓝宝石、石英、碳化硅、金刚石等。101: Substrate, optional materials are single crystal silicon, gallium nitride, gallium arsenide, sapphire, quartz, silicon carbide, diamond, etc.
102：声学镜，可为空腔，也可采用布拉格反射层及其他等效形式。本公开的实施例中采用的是空腔的形式。102: Acoustic mirror, which can be a cavity, or a Bragg reflector and other equivalent forms. The embodiment of the present disclosure adopts the form of a cavity.
103：底电极(包括底电极引脚)，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。103: Bottom electrode (including bottom electrode pins), the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or their alloys.
104：压电层，可以为单晶压电材料，可选的，如：单晶氮化铝、单晶氮化镓、单晶铌酸锂、单晶锆钛酸铅(PZT)、单晶铌酸钾、单晶石英薄膜、或者单晶钽酸锂等材料，也可以为多晶压电材料(与单晶相对应，非单晶材料)，可选的，如多晶氮化铝、氧化锌、PZT等，还可是包含上述材料的一定原子比的稀土元素掺杂材料，例如可以是掺杂氮化铝，掺杂氮化铝至少含一种稀土元素，如钪(Sc)、钇(Y)、镁(Mg)、钛(Ti)、镧(La)、铈(Ce)、镨(Pr)、钕(Nd)、钷(Pm)、钐(Sm)、铕(Eu)、钆(Gd)、铽(Tb)、镝(Dy)、钬(Ho)、铒(Er)、铥(Tm)、镱(Yb)、镥(Lu)等。104: Piezoelectric layer, which can be a single crystal piezoelectric material, optional, such as: single crystal aluminum nitride, single crystal gallium nitride, single crystal lithium niobate, single crystal lead zirconate titanate (PZT), single crystal Potassium niobate, single crystal quartz film, or single crystal lithium tantalate and other materials can also be polycrystalline piezoelectric materials (corresponding to single crystal, non-single crystal materials), optional, such as polycrystalline aluminum nitride, Zinc oxide, PZT, etc., can also be a rare earth element doped material containing a certain atomic ratio of the above materials, for example, can be doped aluminum nitride, and doped aluminum nitride contains at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu) and the like.
105：顶电极(包括顶电极引脚)，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。105: Top electrode (including top electrode pins), the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or their alloys.
106：钝化层或工艺层，其可以是氮化铝、氮化硅或二氧化硅等。106: Passivation layer or process layer, which can be aluminum nitride, silicon nitride or silicon dioxide, etc.
107：凸起结构，材料可选钼，钌，金，铝，镁，钨，铜，钛，铱，锇，铬或以上金属的符合或其合金等。107: Protruding structure, the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the above metals or their alloys.
对于体声波谐振器而言，其机电耦合系数Kt 2与层厚比E/P的值以及压电层中的掺杂元素的掺杂浓度有关。此外，体声波谐振器的Q值与层厚比E/P的值相关。 For the bulk acoustic wave resonator, its electromechanical coupling coefficient Kt 2 is related to the value of the layer thickness ratio E/P and the doping concentration of the doping element in the piezoelectric layer. In addition, the Q value of the bulk acoustic wave resonator is related to the value of the layer thickness ratio E/P.
而且，谐振器的面积(指谐振器的有效区域的面积，而有效区域指谐振器的顶电极、压电层、底电极和声学镜在谐振器的厚度方向上的重叠部分形成的区域)在谐振器的机电耦合系数固定的情况下随谐振器的谐振频率的升高而降低。Also, the area of the resonator (referring to the area of the effective area of the resonator, and the effective area refers to the area formed by the overlapping portion of the top electrode, the piezoelectric layer, the bottom electrode and the acoustic mirror of the resonator in the thickness direction of the resonator) is in When the electromechanical coupling coefficient of the resonator is fixed, it decreases as the resonant frequency of the resonator increases.
本公开提出了一种通过选择低于基于特定的层厚比的掺杂浓度的掺杂浓度(即设定掺杂浓度的上限值)，来维持Kt 2稳定，以及使得在谐振器的面积相对较小的情况下缓解或者消除谐振器的单位面积小导致的功率容量问题。 The present disclosure proposes a method to maintain Kt 2 stable by selecting a doping concentration lower than a doping concentration based on a specific layer thickness ratio (ie, setting an upper limit value of the doping concentration), and making the area of the resonator In a relatively small case, the power capacity problem caused by the small unit area of the resonator is alleviated or eliminated.
本公开也可以进一步限定层厚比的下限值，基于高于层厚比的下限值的层厚比，提升谐振器的性能。The present disclosure may further define the lower limit of the layer thickness ratio, and improve the performance of the resonator based on the layer thickness ratio higher than the lower limit of the layer thickness ratio.
下面简单说明层厚比E/P。The layer thickness ratio E/P is briefly described below.
如图1所示，底电极103的厚度为t1，压电层104的厚度为t2，顶电极105的厚度为t3，以及顶电极以上的钝化层106的厚度为t4。当不设置钝化层106时，定义电极厚度与压电层厚度的比例，即层厚比E/P为(t1+t3)/t2。当谐振器具有钝化层106时，定义电极厚度与压电层层厚比例，即层厚比E/P为(t1+t3+t4*a)/t2，其中a与钝化层106对谐振频率Fs的影响速率和顶电极105对谐振频率Fs的影响速率的比值有关系，具体的，假设钝化层106的厚度对谐振器谐振频率Fs的影响速率为V1nm/MHz,顶电极105的厚度对谐振器谐振频率Fs的影响速率为V2nm/MHz,则a＝V2/V1。假如顶电极和底电极材料选择Mo，钝化层选择AlN，则a的值接近1/3。如果谐振器的叠置结构在上述的基础上增加其他功能层，则层厚比E/P也可以基于上述概念计算。As shown in FIG. 1 , the thickness of the bottom electrode 103 is t1 , the thickness of the piezoelectric layer 104 is t2 , the thickness of the top electrode 105 is t3 , and the thickness of the passivation layer 106 above the top electrode is t4 . When the passivation layer 106 is not provided, the ratio of the electrode thickness to the piezoelectric layer thickness, that is, the layer thickness ratio E/P, is defined as (t1+t3)/t2. When the resonator has the passivation layer 106, the ratio of the electrode thickness to the piezoelectric layer thickness is defined, that is, the layer thickness ratio E/P is (t1+t3+t4*a)/t2, where a and the passivation layer 106 resonate The rate of influence of the frequency Fs is related to the ratio of the rate of influence of the top electrode 105 to the resonant frequency Fs. Specifically, it is assumed that the rate of influence of the thickness of the passivation layer 106 on the resonant frequency Fs of the resonator is V1 nm/MHz, and the thickness of the top electrode 105 The rate of influence on the resonant frequency Fs of the resonator is V2nm/MHz, then a=V2/V1. If Mo is selected for the top electrode and bottom electrode material, and AlN is selected for the passivation layer, the value of a is close to 1/3. If the stacked structure of the resonator adds other functional layers on the basis of the above, the layer thickness ratio E/P can also be calculated based on the above concept.
下面简单说明在压电层中掺杂的元素的掺杂浓度。The doping concentration of the element doped in the piezoelectric layer is briefly described below.
掺杂意味着原来没有掺杂的压电材料中的一种或多种元素的一部分被掺杂元素所代替。此时掺杂浓度定义为：在单位体积中，掺杂元素的原子数，与上述提及的一种或多种被掺杂元素部分代替的元素的总原子数与掺杂元素的原子数之和的比值。例如，在压电层为氮化铝、掺杂元素为钪的情况下，部分铝原子被钪原子替代，掺杂浓度为单位体积中钪原子数与铝原子数和钪原子数的和的比值(Sc/Al+Sc)。Doping means that a portion of one or more elements in the original undoped piezoelectric material is replaced by a doping element. At this time, the doping concentration is defined as: in a unit volume, the atomic number of the doping element, and the total atomic number of the above-mentioned one or more elements partially replaced by the doping element and the atomic number of the doping element and the ratio. For example, when the piezoelectric layer is aluminum nitride and the doping element is scandium, part of the aluminum atoms are replaced by scandium atoms, and the doping concentration is the ratio of the number of scandium atoms to the sum of the number of aluminum atoms and scandium atoms per unit volume. (Sc/Al+Sc).
图2为示例性示出层厚比E/P值和凸起结构宽度与谐振器的Q值之间的关系图。图2中，纵坐标为谐振器的Q值，横坐标有两层，第一层为谐振器的层厚比E/P，第二层为凸起结构107的宽度L(单位为μm)。基于第一层，图2示例性示出了Band1TX频带(1920-1980MHz)的谐振器Q值随层厚比E/P的变化关系。基于第二层，图2示例性示出了在不同的层厚比E/P的情况下，不同的凸起结构宽度L时谐振器的Q值。FIG. 2 is a graph exemplarily showing the relationship between the layer thickness ratio E/P value and the convex structure width and the Q value of the resonator. In FIG. 2 , the ordinate is the Q value of the resonator, and the abscissa has two layers, the first layer is the layer thickness ratio E/P of the resonator, and the second layer is the width L (unit is μm) of the protruding structure 107 . Based on the first layer, FIG. 2 exemplarily shows the resonator Q value of the Band1TX frequency band (1920-1980 MHz) as a function of the layer thickness ratio E/P. Based on the second layer, FIG. 2 exemplarily shows the Q-values of the resonator at different protrusion structure widths L under different layer thickness ratios E/P.
图3示例性示出了在层厚比E/P＝1的情况下凸起结构的宽度L与谐振器的Q值之间的关系图。从图3可以看出，谐振器Q值随凸起宽度L变化而变化，当凸起宽度L＝1.25um和L＝5.25um左右时Q值存在两个峰值。但是，参见图2，当层厚比E/P小于1时，图3中对应的两个Q值的峰值均会随着层厚比E/P变小而恶化。参见图2，当E/P＝0.65时，在图3中的Q值的两个最大值均恶化超过了20％，并且L＝1.25时的最大值已不存在。FIG. 3 exemplarily shows the relationship between the width L of the raised structure and the Q value of the resonator in the case of a layer thickness ratio E/P=1. It can be seen from FIG. 3 that the Q value of the resonator varies with the protrusion width L, and there are two peaks in the Q value when the protrusion width L=1.25um and L=5.25um. However, referring to FIG. 2 , when the layer thickness ratio E/P is less than 1, the peaks of the two corresponding Q values in FIG. 3 both deteriorate as the layer thickness ratio E/P becomes smaller. Referring to FIG. 2, when E/P=0.65, both maximum values of the Q value in FIG. 3 deteriorate by more than 20%, and the maximum value at L=1.25 no longer exists.
因此，层厚比E/P的取值可以直接影响谐振器的Q值的大小。为了得到较好的谐振器Q值，层厚比E/P的值应不低于0.75。Therefore, the value of the layer thickness ratio E/P can directly affect the Q value of the resonator. In order to obtain a better Q value of the resonator, the value of the layer thickness ratio E/P should not be lower than 0.75.
图4示例性示出了E/P值与Kt 2的关系图，其中横坐标为E/P值，纵坐标为Kt 2。更具体的，图4示例性示出了当压电层为氮化铝掺杂金属钪元素的压电层时，掺杂浓度为8.2％时，kt 2随层厚比E/P的变化。可以看到，随着层厚比E/P降低，kt 2升高。然而，在保证谐振器性能不严重恶化的前提下，从图2得到的结论是不能通过无限降低E/P值来提升kt 2。 FIG. 4 exemplarily shows the relationship between the E/P value and Kt 2 , wherein the abscissa is the E/P value and the ordinate is Kt 2 . More specifically, FIG. 4 exemplarily shows the change of kt 2 with the layer thickness ratio E/P when the piezoelectric layer is a piezoelectric layer of aluminum nitride doped with metal scandium element and the doping concentration is 8.2%. It can be seen that kt 2 increases as the layer thickness ratio E/P decreases. However, on the premise that the resonator performance is not seriously deteriorated, it is concluded from Fig. 2 that kt 2 cannot be improved by infinitely reducing the E/P value.
图5-14示例性示出了掺杂浓度与Kt 2的关系图，其中横坐标为掺杂浓度，而纵坐标为Kt 2。可以看到，随着掺杂浓度提高，Kt 2提高。 5-14 exemplarily show graphs of doping concentration versus Kt 2 , where the abscissa is the doping concentration and the ordinate is Kt 2 . It can be seen that Kt 2 increases as the doping concentration increases.
因此，可以通过选择一个较高的层厚比E/P值，例如层厚比E/P的 值应不低于0.75，以保证谐振器的Q值较高(但是此时Kt 2达不到性能要求或者不完全满足性能要求)，同时，通过选择在预定值以上的掺杂浓度来提升Kt 2以满足性能要求或提升性能。因此，可以在保证谐振器性能(较高的Q值)的前提下，通过提升掺杂浓度提升kt 2。 Therefore, a higher value of the layer thickness ratio E/P can be selected, for example, the value of the layer thickness ratio E/P should not be lower than 0.75 to ensure a higher Q value of the resonator (but at this time Kt 2 cannot reach performance requirements or not fully satisfied), at the same time, the Kt 2 is increased to meet the performance requirements or improve the performance by selecting a doping concentration above a predetermined value. Therefore, on the premise of ensuring the resonator performance (higher Q value), kt 2 can be increased by increasing the doping concentration.
由于Kt 2与层厚比E/P的值以及掺杂浓度有关，且E/P值有下限值的限制(如前说明的，不小于0.75)，所以，即使希望Kt 2越大越好，Kt 2也有一个上限值，该上限值由E/P的下限值0.75确定。 Since Kt 2 is related to the value of the layer thickness ratio E/P and the doping concentration, and the E/P value is limited by the lower limit (as explained before, not less than 0.75), even if it is desired that the larger the Kt 2 , the better, Kt 2 also has an upper limit, which is determined by the lower limit of E/P, 0.75.
换言之，在本公开中，对于体声波滤波器，可以通过选择掺杂浓度来提升谐振器的kt 2。然而对于选定了kt 2的谐振器，掺杂浓度存在一个由E/P值确定的较优的范围，以保证谐振器的高性能。 In other words, in the present disclosure, for a bulk acoustic wave filter, the kt 2 of the resonator can be increased by selecting the doping concentration. However, for the resonator with kt 2 selected, there is a better range of doping concentration determined by the E/P value to ensure the high performance of the resonator.
此外，谐振器的面积A满足如下公式：In addition, the area A of the resonator satisfies the following formula:
A∝t2/(Fs*ε)–(1)A∝t2/(Fs*ε)–(1)
A:50Ω谐振器的面积A: Area of 50Ω resonator
t2：压电层的厚度t2: Thickness of the piezoelectric layer
Fs：谐振器的谐振频率Fs: Resonant frequency of the resonator
ε：压电层的介电常数ε: dielectric constant of the piezoelectric layer
随着频率升高，在固定kt 2的情况下压电层的厚度t2会变小。通过上述公式(1)可以知道，随着频率Fs升高，50Ω谐振器的面积会变小。比如在掺杂浓度为0的情况下，当kt 2为5.9％时，参见图17，1.75GHz的50Ω谐振器面积约为21000μm 2，而参见图16，3.5GHz的50Ω谐振器面积约为5200μm 2。当谐振器的频率升高从而面积变小后，如在背景技术中提到的，在谐振器的功率较大的情况下，会出现谐振器的单位面积的功率容量问题。当单颗谐振器应当承受的功率一定时，面积越小时功率密度则越高，因此谐振器越容易烧毁。因此，对于高频滤波器或谐振器，例如频率高于2.5GHz，需要考虑提高谐振器的面积以减少或消除谐振器因为单位面积的功率容量过大而烧毁的风险。 As the frequency increases, the thickness t2 of the piezoelectric layer becomes smaller with kt2 fixed. It can be known from the above formula (1) that as the frequency Fs increases, the area of the 50Ω resonator becomes smaller. For example, when the doping concentration is 0, when the kt 2 is 5.9%, referring to Fig. 17, the area of the 50Ω resonator at 1.75GHz is about 21000μm 2 , while referring to Fig. 16, the area of the 50Ω resonator at 3.5GHz is about 5200μm 2 . When the frequency of the resonator increases and the area becomes smaller, as mentioned in the background art, when the power of the resonator is relatively large, the problem of the power capacity per unit area of the resonator will occur. When the power that a single resonator should withstand is constant, the smaller the area, the higher the power density, so the resonator is easier to burn. Therefore, for high-frequency filters or resonators, such as frequencies above 2.5 GHz, it is necessary to consider increasing the area of the resonator to reduce or eliminate the risk of the resonator being burned due to excessive power capacity per unit area.
图15示例性示出了层厚比E/P值与谐振器的面积的关系图，其中Kt 2为5.9％。图15中，纵轴为谐振器的面积，单位为μm 2，横轴为E/P值。因此，对于固定的Kt 2，基于图15所示，可以通过减小层厚比E/P来增加谐振器的面积。又，如图4所示，随着E/P值降低，在掺杂浓度不变的情 况下，Kt 2会升高。此外，参见图5-14，对于固定的E/P值，随着掺杂浓度降低，Kt 2会降低。基于以上，为了使得高频谐振器的面积的变大且保持Kt 2稳定，可以减小层厚比E/P以增加面积、同时降低掺杂浓度以保持谐振器的Kt 2稳定(即不变或相对于原值浮动5％，在本公开的实施例中，以保持不变为例进行说明)。 FIG. 15 exemplarily shows a graph of the layer thickness ratio E/P value versus the area of the resonator, where Kt 2 is 5.9%. In FIG. 15 , the vertical axis is the area of the resonator in μm 2 , and the horizontal axis is the E/P value. Therefore, for a fixed Kt 2 , based on what is shown in FIG. 15 , the area of the resonator can be increased by reducing the layer thickness ratio E/P. Also, as shown in FIG. 4 , as the E/P value decreases, Kt 2 increases with the doping concentration unchanged. Furthermore, referring to Figures 5-14, for a fixed E/P value, Kt 2 decreases as the doping concentration decreases. Based on the above, in order to increase the area of the high-frequency resonator and keep the Kt 2 stable, the layer thickness ratio E/P can be reduced to increase the area, while reducing the doping concentration to keep the Kt 2 of the resonator stable (ie unchanged). Or float by 5% relative to the original value, in the embodiment of the present disclosure, take the same as an example for illustration).
因此，若需要通过选择降低层厚比E/P值来增加谐振器的面积(较小的层厚比E/P值会导致谐振器的Kt 2升高)，就需要同时采用降低的掺杂浓度来降低Kt 2以保持Kt 2稳定。由于希望谐振器的面积增加越多，E/P值就要越小，因此，可以选择较低的E/P值以及与之对应的掺杂浓度，这样既保证了谐振器的面积不至于太小从而导致功率容量的问题，也保证了谐振器的Kt 2稳定。 Therefore, if it is necessary to increase the area of the resonator by selectively reducing the E/P value of the layer thickness ratio (smaller layer thickness ratio E/P values will lead to an increase in the Kt of the resonator ) , it is necessary to use reduced doping at the same time. concentration to lower Kt 2 to keep Kt 2 stable. Since the more the area of the resonator is expected to increase, the smaller the E/P value will be. Therefore, a lower E/P value and the corresponding doping concentration can be selected, which not only ensures that the area of the resonator will not be too large It is small which leads to the problem of power capacity and also ensures that the Kt 2 of the resonator is stable.
在本公开中，选择层厚比E/P的值应不大于3而且基于该E/P值来确定掺杂浓度的上限值。具体的，在本公开中，对于体声波滤波器，可以通过选择降低E/P值来增大谐振器的面积，但是，为了维持谐振器的kt 2稳定，或者对于选定了kt 2的谐振器，还需要将掺杂浓度设定在一个较优的范围，该较优的范围的上限基于较小的层厚比E/P的值(在本公开中为3)来确定，从而既可以增大谐振器的面积(通过选择较小的E/P值)，还可以通过选择与该E/P值对应的较小掺杂浓度值来维持Kt 2稳定。即，在本公开中，对于高频谐振器，例如频率高于2.5GHz的谐振器，若既要保证谐振器的性能又要增大谐振器的面积，则不仅掺杂浓度需要满足因为性能要求，还需要其基于谐振器的面积要求有一个上限限制。对于高频产品，在本公开中，使E/P值小于3且掺杂浓度为小于E/P＝3对应的掺杂浓度，从而有利于增大谐振器面积以及满足谐振器的相关性能要求。 In the present disclosure, the value of the layer thickness ratio E/P is selected to be not greater than 3 and the upper limit value of the doping concentration is determined based on the E/P value. Specifically, in the present disclosure, for the BAW filter , the area of the resonator can be increased by reducing the E/P value. It is also necessary to set the doping concentration in an optimal range, and the upper limit of the optimal range is determined based on the smaller value of the layer thickness ratio E/P (3 in the present disclosure), so that both Increasing the area of the resonator (by choosing a smaller E/P value) also keeps Kt 2 stable by choosing a smaller doping concentration value corresponding to that E/P value. That is, in the present disclosure, for a high-frequency resonator, such as a resonator with a frequency higher than 2.5 GHz, if the performance of the resonator is to be ensured and the area of the resonator is to be increased, not only the doping concentration needs to meet the performance requirements , which also requires an upper limit based on the area requirement of the resonator. For high-frequency products, in the present disclosure, the E/P value is less than 3 and the doping concentration is less than the doping concentration corresponding to E/P=3, which is beneficial to increase the area of the resonator and meet the relevant performance requirements of the resonator .
基于以上，本公开提出了一种体声波谐振器，其压电层为包括掺杂元素的压电层，所述掺杂元素具有对应的掺杂浓度，所述谐振器的谐振频率高于2.5GHz，且具有层厚比E/P；所述谐振器具有机电耦合系数Kt 2，所述掺杂浓度小于a1，a1为层厚比E/P＝3时所述机电耦合系数Kt 2对应的掺杂浓度。 Based on the above, the present disclosure proposes a bulk acoustic wave resonator, the piezoelectric layer of which is a piezoelectric layer including a doping element, the doping element has a corresponding doping concentration, and the resonant frequency of the resonator is higher than 2.5 GHz, and has a layer thickness ratio E/P; the resonator has an electromechanical coupling coefficient Kt 2 , the doping concentration is less than a1, and a1 corresponds to the electromechanical coupling coefficient Kt 2 when the layer thickness ratio E/P=3 doping concentration.
基于以上，本公开也提出了一种体声波谐振器的压电层的掺杂浓度确定方法，谐振器的压电层为包括掺杂元素的压电层，所述掺杂元素具有对 应的掺杂浓度，所述谐振器的谐振频率高于2.5GHz，且具有层厚比E/P；所述谐振器具有机电耦合系数Kt 2，所述方法包括步骤：基于层厚比E/P，选择所述掺杂浓度小于a1，a1为谐振器层厚比E/P＝3时所述机电耦合系数Kt 2对应的掺杂浓度。 Based on the above, the present disclosure also proposes a method for determining a doping concentration of a piezoelectric layer of a bulk acoustic wave resonator, where the piezoelectric layer of the resonator is a piezoelectric layer including a doping element, and the doping element has a corresponding doping concentration. impurity concentration, the resonant frequency of the resonator is higher than 2.5GHz, and the resonator has a layer thickness ratio E/P; the resonator has an electromechanical coupling coefficient Kt 2 , and the method includes the steps: based on the layer thickness ratio E/P, selecting The doping concentration is less than a1, and a1 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=3.
在本公开的更具体的实施例中，当压电层为氮化铝掺杂金属钪元素的压电层时，掺杂浓度的上限值a1为层厚比E/P＝3时所述机电耦合系数Kt 2对应的掺杂浓度，且由如下公式确定：Kt 2＝0.2977a1 2+0.2085a1+0.033。在图5中，示出了在E/P＝3的情况下，掺杂浓度a1与Kt 2的关系图，在图5中，y对应于Kt 2，而x对应于掺杂浓度a1。 In a more specific embodiment of the present disclosure, when the piezoelectric layer is an aluminum nitride-doped metal scandium piezoelectric layer, the upper limit a1 of the doping concentration is the layer thickness ratio E/P=3. The doping concentration corresponding to the electromechanical coupling coefficient Kt 2 is determined by the following formula: Kt 2 =0.2977a1 2 +0.2085a1+0.033. In FIG. 5, a graph showing the relationship between the doping concentration a1 and Kt 2 in the case of E/P=3, in FIG. 5, y corresponds to Kt 2 , and x corresponds to the doping concentration a1.
在本公开的一个实施例中，谐振器的谐振频率高于3.0GHz，掺杂浓度小于a2，a2为谐振器层厚比E/P＝2.8时所述机电耦合系数Kt 2对应的掺杂浓度。在本公开的更具体的实施例中，当压电层为氮化铝掺杂金属钪元素的压电层时，掺杂浓度的上限值a2为层厚比E/P＝2.8时所述机电耦合系数Kt 2对应的掺杂浓度，且由如下公式确定：Kt 2＝0.3093a2 2+0.2149a2+0.0342。在图6中，示出了在E/P＝2.8的情况下，掺杂浓度a2与Kt 2的关系图，在图6中，y对应于Kt 2，而x对应于掺杂浓度a2。 In an embodiment of the present disclosure, the resonant frequency of the resonator is higher than 3.0 GHz, and the doping concentration is less than a2, where a2 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=2.8 . In a more specific embodiment of the present disclosure, when the piezoelectric layer is an aluminum nitride-doped metal scandium piezoelectric layer, the upper limit a2 of the doping concentration is the layer thickness ratio E/P=2.8. The doping concentration corresponding to the electromechanical coupling coefficient Kt 2 is determined by the following formula: Kt 2 =0.3093a2 2 +0.2149a2+0.0342. In FIG. 6 , a graph of doping concentration a2 versus Kt 2 is shown in the case of E/P=2.8, in which y corresponds to Kt 2 and x corresponds to doping concentration a2.
在本公开的一个实施例中，所述谐振器的谐振频率高于3.5GHz；所述掺杂浓度小于a3，a3为谐振器层厚比E/P＝2.6时所述机电耦合系数Kt 2对应的掺杂浓度。在本公开的更具体的实施例中，当压电层为氮化铝掺杂金属钪元素的压电层时，掺杂浓度的上限值a3为层厚比E/P＝2.6时所述机电耦合系数Kt 2对应的掺杂浓度，且由如下公式确定：Kt 2＝0.3437a3 2+0.2137a3+0.0364。在图7中，示出了在E/P＝2.6的情况下，掺杂浓度a3与Kt 2的关系图，在图7中，y对应于Kt 2，而x对应于掺杂浓度a3。 In an embodiment of the present disclosure, the resonant frequency of the resonator is higher than 3.5 GHz; the doping concentration is less than a3, where a3 is the resonator layer thickness ratio E/P=2.6 when the electromechanical coupling coefficient Kt 2 corresponds to doping concentration. In a more specific embodiment of the present disclosure, when the piezoelectric layer is an aluminum nitride-doped metal scandium piezoelectric layer, the upper limit value a3 of the doping concentration is the layer thickness ratio E/P=2.6. The doping concentration corresponding to the electromechanical coupling coefficient Kt 2 is determined by the following formula: Kt 2 =0.3437a3 2 +0.2137a3+0.0364. In FIG. 7, a graph of doping concentration a3 versus Kt 2 is shown in the case of E/P=2.6, in which y corresponds to Kt 2 and x corresponds to doping concentration a3.
在本公开的一个实施例中，所述谐振器的谐振频率高于4GHz；所述掺杂浓度小于a4，a4为谐振器层厚比E/P＝2.4时所述机电耦合系数Kt 2对应的掺杂浓度。在本公开的更具体的实施例中，当压电层为氮化铝掺杂金属钪元素的压电层时，掺杂浓度的上限值a4为层厚比E/P＝2.4时所述机电耦合系数Kt 2对应的掺杂浓度，且由如下公式确定：Kt 2＝0.3508a4 2+0.2213a4+0.0378。在图8中，示出了在E/P＝2.4的情况下，掺杂浓度a4与Kt 2的关系图，在图8中，y对应于Kt 2，而x对应于掺杂浓度a4。 In an embodiment of the present disclosure, the resonant frequency of the resonator is higher than 4 GHz; the doping concentration is less than a4, where a4 corresponds to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=2.4 doping concentration. In a more specific embodiment of the present disclosure, when the piezoelectric layer is an aluminum nitride-doped metal scandium piezoelectric layer, the upper limit value a4 of the doping concentration is the layer thickness ratio E/P=2.4. The doping concentration corresponding to the electromechanical coupling coefficient Kt 2 is determined by the following formula: Kt 2 =0.3508a4 2 +0.2213a4+0.0378. In FIG. 8 , a graph of doping concentration a4 versus Kt 2 is shown in the case of E/P=2.4, in which y corresponds to Kt 2 and x corresponds to doping concentration a4.
在本公开的一个实施例中，所述谐振器的谐振频率高于4.5GHz；所述掺杂浓度小于a5，a5为谐振器层厚比E/P＝2.2时所述机电耦合系数Kt 2对应的掺杂浓度。在本公开的更具体的实施例中，当压电层为氮化铝掺杂金属钪元素的压电层时，掺杂浓度的上限值a5为层厚比E/P＝2.2时所述机电耦合系数Kt 2对应的掺杂浓度，且由如下公式确定：Kt 2＝0.3345a5 2+0.2352a5+0.0399。在图9中，示出了在E/P＝2.2的情况下，掺杂浓度a5与Kt 2的关系图，在图9中，y对应于Kt 2，而x对应于掺杂浓度a5。 In an embodiment of the present disclosure, the resonant frequency of the resonator is higher than 4.5 GHz; the doping concentration is less than a5, where a5 is the resonator layer thickness ratio E/P=2.2 when the electromechanical coupling coefficient Kt 2 corresponds to doping concentration. In a more specific embodiment of the present disclosure, when the piezoelectric layer is an aluminum nitride-doped metal scandium piezoelectric layer, the upper limit value a5 of the doping concentration is the layer thickness ratio E/P=2.2. The doping concentration corresponding to the electromechanical coupling coefficient Kt 2 is determined by the following formula: Kt 2 =0.3345a5 2 +0.2352a5+0.0399. In FIG. 9 , a graph of doping concentration a5 versus Kt 2 is shown in the case of E/P=2.2, in which y corresponds to Kt 2 and x corresponds to doping concentration a5.
在本公开的一个实施例中，所述谐振器的谐振频率高于5GHz；所述掺杂浓度小于a6，a6为谐振器层厚比E/P＝2时所述机电耦合系数Kt 2对应的掺杂浓度。在本公开的更具体的实施例中，当压电层为氮化铝掺杂金属钪元素的压电层时，掺杂浓度的上限值a5为层厚比E/P＝2时所述机电耦合系数Kt 2对应的掺杂浓度，且由如下公式确定：Kt 2＝0.407a6 2+0.2315a6+0.0421。在图10中，示出了在E/P＝2的情况下，掺杂浓度a6与Kt 2的关系图，在图10中，y对应于Kt 2，而x对应于掺杂浓度a6。 In an embodiment of the present disclosure, the resonant frequency of the resonator is higher than 5 GHz; the doping concentration is less than a6, where a6 corresponds to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=2 doping concentration. In a more specific embodiment of the present disclosure, when the piezoelectric layer is an aluminum nitride-doped metal scandium piezoelectric layer, the upper limit value a5 of the doping concentration is the layer thickness ratio E/P=2. The doping concentration corresponding to the electromechanical coupling coefficient Kt 2 is determined by the following formula: Kt 2 =0.407a6 2 +0.2315a6+0.0421. In FIG. 10 , a graph showing the relationship between the doping concentration a6 and Kt 2 in the case of E/P=2, in FIG. 10 , y corresponds to Kt 2 , and x corresponds to the doping concentration a6.
在本公开的一个实施例中，所述谐振器的谐振频率高于6GHz；所述掺杂浓度小于a7，a7为谐振器层厚比E/P＝1.8时所述机电耦合系数Kt 2对应的掺杂浓度。在本公开的更具体的实施例中，当压电层为氮化铝掺杂金属钪元素的压电层时，掺杂浓度的上限值a7为层厚比E/P＝1.8时所述机电耦合系数Kt 2对应的掺杂浓度，且由如下公式确定：Kt 2＝0.4801a7 2+0.2157a7+0.0461。在图11中，示出了在E/P＝1.8的情况下，掺杂浓度a6与Kt 2的关系图，在图11中，y对应于Kt 2，而x对应于掺杂浓度a7。 In an embodiment of the present disclosure, the resonant frequency of the resonator is higher than 6 GHz; the doping concentration is less than a7, where a7 corresponds to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=1.8 doping concentration. In a more specific embodiment of the present disclosure, when the piezoelectric layer is an aluminum nitride-doped metal scandium piezoelectric layer, the upper limit a7 of the doping concentration is the layer thickness ratio E/P=1.8. The doping concentration corresponding to the electromechanical coupling coefficient Kt 2 is determined by the following formula: Kt 2 =0.4801a7 2 +0.2157a7+0.0461. In FIG. 11 , a graph of doping concentration a6 versus Kt 2 is shown in the case of E/P=1.8, in which y corresponds to Kt 2 and x corresponds to doping concentration a7.
此外，如上已经提及的，对于E/P值，为了使得谐振器的Q值处于相对高的值，E/P值不小于0.75。Furthermore, as already mentioned above, for the E/P value, in order to keep the Q value of the resonator at a relatively high value, the E/P value is not less than 0.75.
在本公开的一个实施例中，所述掺杂浓度不小于b1，b1为谐振器层厚比E/P＝0.75时所述机电耦合系数Kt 2对应的掺杂浓度。在本公开的更具体的实施例中，当压电层为氮化铝掺杂金属钪元素的压电层时，掺杂浓度的下限值b1为层厚比E/P＝0.75时所述机电耦合系数Kt 2对应的掺杂浓度，且由如下公式确定：Kt 2＝0.3909b1 2+0.3056b1+0.062。在图14中，示出了在E/P＝0.75的情况下，掺杂浓度b1与Kt 2的关系图，在图14中， y对应于Kt 2，而x对应于掺杂浓度b1。 In an embodiment of the present disclosure, the doping concentration is not less than b1, and b1 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=0.75. In a more specific embodiment of the present disclosure, when the piezoelectric layer is an aluminum nitride-doped metal scandium piezoelectric layer, the lower limit value b1 of the doping concentration is the layer thickness ratio E/P=0.75. The doping concentration corresponding to the electromechanical coupling coefficient Kt 2 is determined by the following formula: Kt 2 =0.3909b1 2 +0.3056b1+0.062. In FIG. 14 , a graph of doping concentration b1 versus Kt 2 is shown in the case of E/P=0.75, in which y corresponds to Kt 2 and x corresponds to doping concentration b1 .
在本公开的一个实施例中，所述掺杂浓度不小于b2，b2为谐振器层厚比E/P＝0.85时所述机电耦合系数Kt 2对应的掺杂浓度。在本公开的更具体的实施例中，当压电层为氮化铝掺杂金属钪元素的压电层时，掺杂浓度的下限值b2为层厚比E/P＝0.85时所述机电耦合系数Kt 2对应的掺杂浓度，且由如下公式确定：Kt 2＝0.4463b2 2+0.2869b2+0.0603。在图13中，示出了在E/P＝0.85的情况下，掺杂浓度b2与Kt 2的关系图，在图13中，y对应于Kt 2，而x对应于掺杂浓度b2。 In an embodiment of the present disclosure, the doping concentration is not less than b2, and b2 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=0.85. In a more specific embodiment of the present disclosure, when the piezoelectric layer is an aluminum nitride-doped metal scandium piezoelectric layer, the lower limit value b2 of the doping concentration is the layer thickness ratio E/P=0.85. The doping concentration corresponding to the electromechanical coupling coefficient Kt 2 is determined by the following formula: Kt 2 =0.4463b2 2 +0.2869b2+0.0603. In FIG. 13, a graph showing the relationship between doping concentration b2 and Kt 2 in the case of E/P=0.85, in FIG. 13, y corresponds to Kt 2 and x corresponds to doping concentration b2.
在本公开的一个实施例中，所述掺杂浓度不小于b3，b3为谐振器层厚比E/P＝1时所述机电耦合系数Kt 2对应的掺杂浓度。在本公开的更具体的实施例中，当压电层为氮化铝掺杂金属钪元素的压电层时，掺杂浓度的下限值b3为层厚比E/P＝1时所述机电耦合系数Kt 2对应的掺杂浓度，且由如下公式确定：Kt 2＝0.4147b3 2+0.2774b3+0.057。在图12中，示出了在E/P＝1的情况下，掺杂浓度b3与Kt 2的关系图，在图12中，y对应于Kt 2，而x对应于掺杂浓度b3。 In an embodiment of the present disclosure, the doping concentration is not less than b3, and b3 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=1. In a more specific embodiment of the present disclosure, when the piezoelectric layer is an aluminum nitride-doped metal scandium piezoelectric layer, the lower limit value b3 of the doping concentration is the layer thickness ratio E/P=1. The doping concentration corresponding to the electromechanical coupling coefficient Kt 2 is determined by the following formula: Kt 2 =0.4147b3 2 +0.2774b3+0.057. In FIG. 12 , a graph showing the relationship between the doping concentration b3 and Kt 2 in the case of E/P=1, in FIG. 12 , y corresponds to Kt 2 and x corresponds to the doping concentration b3.
以上的谐振器(基于层厚比E/P选取合适的掺杂浓度来增加谐振器面积的同时保持Kt 2稳定)也可以用于滤波器。 The above resonators (selecting a suitable doping concentration based on the layer thickness ratio E/P to increase the resonator area while keeping Kt 2 stable) can also be used in filters.
在本公开的一个实施例中，所述滤波器为2.515GHz-2.675GHz频段或3.3GHz-3.6GHz频段的滤波器；且所述滤波器中的谐振器的所述掺杂浓度的范围为14.4％-26.5％。进一步的，所述滤波器中的谐振器的所述掺杂浓度的范围为15.7％-26.5％。In an embodiment of the present disclosure, the filter is a filter in a frequency band of 2.515GHz-2.675GHz or a frequency band of 3.3GHz-3.6GHz; and the range of the doping concentration of the resonator in the filter is 14.4 %-26.5%. Further, the doping concentration of the resonator in the filter ranges from 15.7% to 26.5%.
在本公开的一个实施例中，所述滤波器为4.8GHz-4.96GHz频段的滤波器；且所述滤波器中的谐振器的所述掺杂浓度的范围为1％-12.4％。进一步的，所述滤波器中的谐振器的所述掺杂浓度的范围为2.6％-12.4％。In an embodiment of the present disclosure, the filter is a filter in the frequency band of 4.8GHz-4.96GHz; and the doping concentration of the resonator in the filter ranges from 1% to 12.4%. Further, the doping concentration of the resonator in the filter ranges from 2.6% to 12.4%.
在本公开的一个实施例中，所述滤波器为5.15GHz-5.85GHz频段的滤波器；且所述滤波器中的谐振器的所述掺杂浓度的范围为28.5％-37％。进一步的，所述滤波器中的谐振器的所述掺杂浓度的范围为28.8％-37％。In an embodiment of the present disclosure, the filter is a filter in the frequency band of 5.15GHz-5.85GHz; and the doping concentration of the resonator in the filter ranges from 28.5% to 37%. Further, the doping concentration of the resonator in the filter ranges from 28.8% to 37%.
在本公开的上述实施例中，说明了基于选择的层厚比E/P的值，来选择谐振器的压电层掺杂浓度的上限值，从而可以在保证谐振器的Kt 2稳定的同时，谐振器有较大的面积。进一步的，还可以基于选择的层厚比E/P 的值，来选择谐振器的压电层掺杂浓度的下限值，还保证谐振器有较高的Q值。本公开为如何选择压电层的掺杂元素的掺杂浓度从而获得较大的谐振器面积提供了有效的指导方案。 In the above-mentioned embodiments of the present disclosure, it is explained that the upper limit value of the doping concentration of the piezoelectric layer of the resonator is selected based on the value of the selected layer thickness ratio E/P, so that the Kt 2 of the resonator can be guaranteed to be stable. At the same time, the resonator has a larger area. Further, the lower limit value of the doping concentration of the piezoelectric layer of the resonator can also be selected based on the value of the selected layer thickness ratio E/P, which also ensures that the resonator has a higher Q value. The present disclosure provides an effective guiding solution for how to select the doping concentration of the doping element of the piezoelectric layer to obtain a larger resonator area.
如本领域技术人员能够理解的，压电层的材料不限于氮化铝，还可以是例如本公开中列明的其他压电材料，而且掺杂元素也不限于钪金属，还可以本公开中列明的其他可掺杂的金属元素。虽然在本公开的具体实施例中，以氮化铝掺杂钪元素为例说明了如何基于选择的层厚比E/P的值来确定谐振器的压电层掺杂浓度的上限值或下限值。As can be understood by those skilled in the art, the material of the piezoelectric layer is not limited to aluminum nitride, but can also be other piezoelectric materials listed in the present disclosure, and the doping element is not limited to scandium metal, and can also be used in the present disclosure. Other doped metal elements listed. Although in the specific embodiment of the present disclosure, the aluminum nitride doped scandium element is used as an example to illustrate how to determine the upper limit value or the upper limit of the doping concentration of the piezoelectric layer of the resonator based on the value of the selected layer thickness ratio E/P lower limit.
需要指出的是，在本公开中，各个数值范围，除了明确指出不包含端点值之外，除了可以为端点值，还可以为各个数值范围的中值，这些均在本公开的保护范围之内。It should be pointed out that, in the present disclosure, each numerical range, except that it is explicitly stated that it does not include the endpoint value, may be the endpoint value, but also the middle value of each numerical range, and these are all within the protection scope of the present disclosure. .
如本领域技术人员能够理解的，体声波谐振器可以用于形成除了滤波器之外的其他半导体器件。As can be appreciated by those skilled in the art, BAW resonators can be used to form other semiconductor devices besides filters.
基于以上，本公开提出了如下技术方案：Based on the above, the present disclosure proposes the following technical solutions:
1、一种体声波谐振器，包括：1. A bulk acoustic wave resonator, comprising:
基底；base;
声学镜；acoustic mirror;
底电极；bottom electrode;
压电层，所述压电层为包括掺杂元素的压电层，所述掺杂元素具有对应的掺杂浓度；和a piezoelectric layer, the piezoelectric layer being a piezoelectric layer including a doping element having a corresponding doping concentration; and
顶电极，top electrode,
其中：in:
所述谐振器的谐振频率高于2.5GHz，且具有层厚比E/P；The resonant frequency of the resonator is higher than 2.5GHz, and has a layer thickness ratio E/P;
所述谐振器具有机电耦合系数Kt 2，所述掺杂浓度小于a1，a1为层厚比E/P＝3时所述机电耦合系数Kt 2对应的掺杂浓度。 The resonator has an electromechanical coupling coefficient Kt 2 , the doping concentration is less than a1, and a1 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the layer thickness ratio E/P=3.
2、根据1所述的谐振器，其中：2. The resonator according to 1, wherein:
所述压电层为掺杂有钪元素的氮化铝层，a1由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and a1 is determined by the following formula:
Kt 2＝0.2977a1 2+0.2085a1+0.033。 Kt 2 =0.2977a1 2 +0.2085a1+0.033.
3、根据1所述的谐振器，其中：3. The resonator according to 1, wherein:
所述谐振器的谐振频率高于3.0GHz；The resonant frequency of the resonator is higher than 3.0GHz;
所述掺杂浓度小于a2，a2为谐振器层厚比E/P＝2.8时所述机电耦合系数Kt 2对应的掺杂浓度。 The doping concentration is less than a2, and a2 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=2.8.
4、根据3所述的谐振器，其中：4. The resonator according to 3, wherein:
所述压电层为掺杂有钪元素的氮化铝层，a3由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and a3 is determined by the following formula:
Kt 2＝0.3093a2 2+0.2149a2+0.0342。 Kt 2 =0.3093a2 2 +0.2149a2+0.0342.
5、根据3所述的谐振器，其中：5. The resonator of 3, wherein:
所述谐振器的谐振频率高于3.5GHz；The resonant frequency of the resonator is higher than 3.5GHz;
所述掺杂浓度小于a3，a3为谐振器层厚比E/P＝2.6时所述机电耦合系数Kt 2对应的掺杂浓度。 The doping concentration is less than a3, and a3 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=2.6.
6、根据5所述的谐振器，其中：6. The resonator according to 5, wherein:
所述压电层为掺杂有钪元素的氮化铝层，a3由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and a3 is determined by the following formula:
Kt 2＝0.3437a3 2+0.2137a3+0.0364。 Kt 2 =0.3437a3 2 +0.2137a3+0.0364.
7、根据5所述的谐振器，其中：7. The resonator according to 5, wherein:
所述谐振器的谐振频率高于4GHz；The resonant frequency of the resonator is higher than 4GHz;
所述掺杂浓度小于a4，a4为谐振器层厚比E/P＝2.4时所述机电耦合系数Kt 2对应的掺杂浓度。 The doping concentration is less than a4, and a4 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=2.4.
8、根据7所述的谐振器，其中：8. The resonator according to 7, wherein:
所述压电层为掺杂有钪元素的氮化铝层，a4由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and a4 is determined by the following formula:
Kt 2＝0.3508a4 2+0.2213a4+0.0378。 Kt 2 =0.3508a4 2 +0.2213a4+0.0378.
9、根据7所述的谐振器，其中：9. The resonator according to 7, wherein:
所述谐振器的谐振频率高于4.5GHz；The resonant frequency of the resonator is higher than 4.5GHz;
所述掺杂浓度小于a5，a5为谐振器层厚比E/P＝2.2时所述机电耦合系数Kt 2对应的掺杂浓度。 The doping concentration is less than a5, and a5 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=2.2.
10、根据9所述的谐振器，其中：10. The resonator according to 9, wherein:
所述压电层为掺杂有钪元素的氮化铝层，a5由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and a5 is determined by the following formula:
Kt 2＝0.3345a5 2+0.2352a5+0.0399。 Kt 2 =0.3345a5 2 +0.2352a5+0.0399.
11、根据9所述的谐振器，其中：11. The resonator according to 9, wherein:
所述谐振器的谐振频率高于5GHz；The resonant frequency of the resonator is higher than 5GHz;
所述掺杂浓度小于a6，a6为谐振器层厚比E/P＝2时所述机电耦合系数Kt 2对应的掺杂浓度。 The doping concentration is less than a6, and a6 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=2.
12、根据11所述的谐振器，其中：12. The resonator of 11, wherein:
所述压电层为掺杂有钪元素的氮化铝层，a6由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and a6 is determined by the following formula:
Kt 2＝0.407a6 2+0.2315a6+0.0421。 Kt 2 =0.407a6 2 +0.2315a6+0.0421.
13、根据11所述的谐振器，其中：13. The resonator of 11, wherein:
所述谐振器的谐振频率高于6GHz；The resonant frequency of the resonator is higher than 6 GHz;
所述掺杂浓度小于a7，a7为谐振器层厚比E/P＝1.8时所述机电耦合系数Kt 2对应的掺杂浓度。 The doping concentration is less than a7, and a7 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=1.8.
14、根据13所述的谐振器，其中：14. The resonator of 13, wherein:
所述压电层为掺杂有钪元素的氮化铝层，a7由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and a7 is determined by the following formula:
Kt 2＝0.4801a7 2+0.2157a7+0.0461。 Kt 2 =0.4801a7 2 +0.2157a7+0.0461.
15、根据1-14中任一项所述的谐振器，其中：15. The resonator of any of 1-14, wherein:
所述掺杂浓度不小于b1，b1为层厚比E/P＝0.75时所述机电耦合系数Kt 2对应的掺杂浓度。 The doping concentration is not less than b1, and b1 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the layer thickness ratio E/P=0.75.
16、根据15所述的谐振器，其中：16. The resonator of 15, wherein:
所述压电层为掺杂有钪元素的氮化铝层，b1由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and b1 is determined by the following formula:
Kt 2＝0.3909b1 2+0.3056b1+0.062。 Kt 2 =0.3909b1 2 +0.3056b1+0.062.
17、根据16所述的谐振器，其中：17. The resonator of 16, wherein:
所述掺杂浓度不小于b2，b2为谐振器层厚比E/P＝0.85时所述机电耦合系数Kt 2对应的掺杂浓度。 The doping concentration is not less than b2, and b2 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=0.85.
18、根据17所述的谐振器，其中：18. The resonator of 17, wherein:
所述压电层为掺杂有钪元素的氮化铝层，b2由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and b2 is determined by the following formula:
Kt 2＝0.4463b2 2+0.2869b2+0.0603。 Kt 2 =0.4463b2 2 +0.2869b2+0.0603.
19、根据17所述的谐振器，其中：19. The resonator of 17, wherein:
所述掺杂浓度不小于b3，b3为谐振器层厚比E/P＝1.00时所述机电耦合系数Kt 2对应的掺杂浓度。 The doping concentration is not less than b3, and b3 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=1.00.
20、根据19所述的谐振器，其中：20. The resonator of 19, wherein:
所述压电层为掺杂有钪元素的氮化铝层，b3由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and b3 is determined by the following formula:
Kt 2＝0.4147b3 2+0.2774b3+0.057。 Kt 2 =0.4147b3 2 +0.2774b3+0.057.
21、一种滤波器，包括多个根据1-20中任一项所述的体声波谐振器。21. A filter comprising a plurality of bulk acoustic wave resonators according to any one of 1-20.
22、根据21所述的滤波器，其中：22. The filter according to 21, wherein:
所述滤波器为2.515GHz-2.675GHz频段或3.3GHz-3.6GHz频段的滤波器；且The filter is a filter in the frequency band 2.515GHz-2.675GHz or in the frequency band 3.3GHz-3.6GHz; and
所述滤波器中的谐振器的所述掺杂浓度的范围为14.4％-26.5％。The doping concentration of the resonators in the filter ranges from 14.4% to 26.5%.
23、根据22所述的滤波器，其中：23. The filter of 22, wherein:
所述滤波器中的谐振器的所述掺杂浓度的范围为15.7％-26.5％。The doping concentration of the resonators in the filter ranges from 15.7% to 26.5%.
24、根据21所述的滤波器，其中：24. The filter of 21, wherein:
所述滤波器为4.8GHz-4.96GHz频段的滤波器；且The filter is a filter in the 4.8GHz-4.96GHz frequency band; and
所述滤波器中的谐振器的所述掺杂浓度的范围为1％-12.4％。The doping concentration of the resonators in the filter ranges from 1% to 12.4%.
25、根据24所述的滤波器，其中：25. The filter of 24, wherein:
所述滤波器中的谐振器的所述掺杂浓度的范围为2.6％-12.4％。The doping concentration of the resonators in the filter ranges from 2.6% to 12.4%.
26、根据21所述的滤波器，其中：26. The filter of 21, wherein:
所述滤波器为5.15GHz-5.85GHz频段的滤波器；且The filter is a filter in the 5.15GHz-5.85GHz frequency band; and
所述滤波器中的谐振器的所述掺杂浓度的范围为28.5％-37％。The doping concentration of the resonators in the filter ranges from 28.5% to 37%.
27、根据26所述的滤波器，其中：27. The filter of 26, wherein:
所述滤波器中的谐振器的所述掺杂浓度的范围为28.8％-37％。The doping concentration of the resonators in the filter ranges from 28.8% to 37%.
28、一种掺杂浓度确定方法，所述掺杂浓度为体声波谐振器的压电层的掺杂元素的掺杂浓度，所述谐振器具有机电耦合系数Kt 2，所述谐振器的谐振频率高于2.5GHz且具有层厚比E/P，所述方法包括步骤： 28. A method for determining a doping concentration, wherein the doping concentration is the doping concentration of a doping element of a piezoelectric layer of a bulk acoustic wave resonator, the resonator has an electromechanical coupling coefficient Kt 2 , and the resonance of the resonator is The frequency is higher than 2.5GHz and has a layer thickness ratio E/P, the method comprises the steps:
基于层厚比E/P，选择所述掺杂浓度不小于a1，a1为谐振器层厚比E/P＝3时所述机电耦合系数Kt 2对应的掺杂浓度。 Based on the layer thickness ratio E/P, the doping concentration is selected to be not less than a1, and a1 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=3.
29、根据28所述的方法，其中：29. The method of 28, wherein:
所述压电层为掺杂有钪元素的氮化铝层，a1由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and a1 is determined by the following formula:
Kt 2＝0.2977a1 2+0.2085a1+0.033。 Kt 2 =0.2977a1 2 +0.2085a1+0.033.
30、根据28所述的方法，其中：30. The method of 28, wherein:
选择所述掺杂浓度不小于b1，b1为层厚比E/P＝0.75时所述机电耦合系数Kt 2对应的掺杂浓度。 The doping concentration is selected to be not less than b1, and b1 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the layer thickness ratio E/P=0.75.
31、根据30所述的方法，其中：31. The method of 30, wherein:
所述压电层为掺杂有钪元素的氮化铝层，b1由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and b1 is determined by the following formula:
Kt 2＝0.3909b1 2+0.3056b1+0.062。 Kt 2 =0.3909b1 2 +0.3056b1+0.062.
32、一种电子设备，包括根据21-27中任一项所述的滤波器，或根据 1-20中任一项所述的体声波谐振器。32. An electronic device comprising the filter according to any one of 21-27, or the bulk acoustic wave resonator according to any one of 1-20.
这里的电子设备，包括但不限于射频前端、滤波放大模块等中间产品，以及手机、WIFI、无人机等终端产品。The electronic equipment here includes but is not limited to intermediate products such as RF front-end, filter and amplifier modules, and terminal products such as mobile phones, WIFI, and drones.
尽管已经示出和描述了本公开的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本公开的原理和精神的情况下可以对这些实施例进行变化，本公开的范围由所附权利要求及其等同物限定。Although embodiments of the present disclosure have been shown and described, it will be understood by those skilled in the art that changes may be made to these embodiments without departing from the principles and spirit of the present disclosure, the scope of which is determined by It is defined by the appended claims and their equivalents.

Claims (32)

  1. 一种体声波谐振器，包括：A bulk acoustic wave resonator, comprising:
    基底；base;
    声学镜；acoustic mirror;
    底电极；bottom electrode;
    压电层，所述压电层为包括掺杂元素的压电层，所述掺杂元素具有对应的掺杂浓度；和a piezoelectric layer, the piezoelectric layer is a piezoelectric layer including a doping element having a corresponding doping concentration; and
    顶电极，top electrode,
    其中：in:
    所述谐振器的谐振频率高于2.5GHz，且具有层厚比E/P；The resonant frequency of the resonator is higher than 2.5GHz, and has a layer thickness ratio E/P;
    所述谐振器具有机电耦合系数Kt 2，所述掺杂浓度小于a1，a1为层厚比E/P＝3时所述机电耦合系数Kt 2对应的掺杂浓度。 The resonator has an electromechanical coupling coefficient Kt 2 , the doping concentration is less than a1, and a1 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the layer thickness ratio E/P=3.
  2. 根据权利要求1所述的谐振器，其中：The resonator of claim 1, wherein:
    所述压电层为掺杂有钪元素的氮化铝层，a1由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and a1 is determined by the following formula:
    Kt 2＝0.2977a1 2+0.2085a1+0.033。 Kt 2 =0.2977a1 2 +0.2085a1+0.033.
  3. 根据权利要求1所述的谐振器，其中：The resonator of claim 1, wherein:
    所述谐振器的谐振频率高于3.0GHz；The resonant frequency of the resonator is higher than 3.0GHz;
    所述掺杂浓度小于a2，a2为谐振器层厚比E/P＝2.8时所述机电耦合系数Kt 2对应的掺杂浓度。 The doping concentration is less than a2, and a2 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=2.8.
  4. 根据权利要求3所述的谐振器，其中：The resonator of claim 3, wherein:
    所述压电层为掺杂有钪元素的氮化铝层，a3由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and a3 is determined by the following formula:
    Kt 2＝0.3093a2 2+0.2149a2+0.0342。 Kt 2 =0.3093a2 2 +0.2149a2+0.0342.
  5. 根据权利要求3所述的谐振器，其中：The resonator of claim 3, wherein:
    所述谐振器的谐振频率高于3.5GHz；The resonant frequency of the resonator is higher than 3.5GHz;
    所述掺杂浓度小于a3，a3为谐振器层厚比E/P＝2.6时所述机电耦合系数Kt 2对应的掺杂浓度。 The doping concentration is less than a3, and a3 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=2.6.
  6. 根据权利要求5所述的谐振器，其中：The resonator of claim 5, wherein:
    所述压电层为掺杂有钪元素的氮化铝层，a3由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and a3 is determined by the following formula:
    Kt 2＝0.3437a3 2+0.2137a3+0.0364。 Kt 2 =0.3437a3 2 +0.2137a3+0.0364.
  7. 根据权利要求5所述的谐振器，其中：The resonator of claim 5, wherein:
    所述谐振器的谐振频率高于4GHz；The resonant frequency of the resonator is higher than 4GHz;
    所述掺杂浓度小于a4，a4为谐振器层厚比E/P＝2.4时所述机电耦合系数Kt 2对应的掺杂浓度。 The doping concentration is less than a4, and a4 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=2.4.
  8. 根据权利要求7所述的谐振器，其中：The resonator of claim 7, wherein:
    所述压电层为掺杂有钪元素的氮化铝层，a4由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and a4 is determined by the following formula:
    Kt 2＝0.3508a4 2+0.2213a4+0.0378。 Kt 2 =0.3508a4 2 +0.2213a4+0.0378.
  9. 根据权利要求7所述的谐振器，其中：The resonator of claim 7, wherein:
    所述谐振器的谐振频率高于4.5GHz；The resonant frequency of the resonator is higher than 4.5GHz;
    所述掺杂浓度小于a5，a5为谐振器层厚比E/P＝2.2时所述机电耦合系数Kt 2对应的掺杂浓度。 The doping concentration is less than a5, and a5 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=2.2.
  10. 根据权利要求9所述的谐振器，其中：The resonator of claim 9, wherein:
    所述压电层为掺杂有钪元素的氮化铝层，a5由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and a5 is determined by the following formula:
    Kt 2＝0.3345a5 2+0.2352a5+0.0399。 Kt 2 =0.3345a5 2 +0.2352a5+0.0399.
  11. 根据权利要求9所述的谐振器，其中：The resonator of claim 9, wherein:
    所述谐振器的谐振频率高于5GHz；The resonant frequency of the resonator is higher than 5GHz;
    所述掺杂浓度小于a6，a6为谐振器层厚比E/P＝2时所述机电耦合系数Kt 2对应的掺杂浓度。 The doping concentration is less than a6, and a6 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=2.
  12. 根据权利要求11所述的谐振器，其中：The resonator of claim 11, wherein:
    所述压电层为掺杂有钪元素的氮化铝层，a6由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and a6 is determined by the following formula:
    Kt 2＝0.407a6 2+0.2315a6+0.0421。 Kt 2 =0.407a6 2 +0.2315a6+0.0421.
  13. 根据权利要求11所述的谐振器，其中：The resonator of claim 11, wherein:
    所述谐振器的谐振频率高于6GHz；The resonant frequency of the resonator is higher than 6 GHz;
    所述掺杂浓度小于a7，a7为谐振器层厚比E/P＝1.8时所述机电耦合系数Kt 2对应的掺杂浓度。 The doping concentration is less than a7, and a7 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=1.8.
  14. 根据权利要求13所述的谐振器，其中：The resonator of claim 13, wherein:
    所述压电层为掺杂有钪元素的氮化铝层，a7由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and a7 is determined by the following formula:
    Kt 2＝0.4801a7 2+0.2157a7+0.0461。 Kt 2 =0.4801a7 2 +0.2157a7+0.0461.
  15. 根据权利要求1-14中任一项所述的谐振器，其中：The resonator of any of claims 1-14, wherein:
    所述掺杂浓度不小于b1，b1为层厚比E/P＝0.75时所述机电耦合系数 Kt 2对应的掺杂浓度。 The doping concentration is not less than b1, and b1 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the layer thickness ratio E/P=0.75.
  16. 根据权利要求15所述的谐振器，其中：The resonator of claim 15, wherein:
    所述压电层为掺杂有钪元素的氮化铝层，b1由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and b1 is determined by the following formula:
    Kt 2＝0.3909b1 2+0.3056b1+0.062。 Kt 2 =0.3909b1 2 +0.3056b1+0.062.
  17. 根据权利要求16所述的谐振器，其中：The resonator of claim 16, wherein:
    所述掺杂浓度不小于b2，b2为谐振器层厚比E/P＝0.85时所述机电耦合系数Kt 2对应的掺杂浓度。 The doping concentration is not less than b2, and b2 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=0.85.
  18. 根据权利要求17所述的谐振器，其中：The resonator of claim 17, wherein:
    所述压电层为掺杂有钪元素的氮化铝层，b2由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and b2 is determined by the following formula:
    Kt 2＝0.4463b2 2+0.2869b2+0.0603。 Kt 2 =0.4463b2 2 +0.2869b2+0.0603.
  19. 根据权利要求17所述的谐振器，其中：The resonator of claim 17, wherein:
    所述掺杂浓度不小于b3，b3为谐振器层厚比E/P＝1.00时所述机电耦合系数Kt 2对应的掺杂浓度。 The doping concentration is not less than b3, and b3 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=1.00.
  20. 根据权利要求19所述的谐振器，其中：The resonator of claim 19, wherein:
    所述压电层为掺杂有钪元素的氮化铝层，b3由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and b3 is determined by the following formula:
    Kt 2＝0.4147b3 2+0.2774b3+0.057。 Kt 2 =0.4147b3 2 +0.2774b3+0.057.
  21. 一种滤波器，包括多个根据权利要求1-20中任一项所述的体声波谐振器。A filter comprising a plurality of bulk acoustic wave resonators according to any one of claims 1-20.
  22. 根据权利要求21所述的滤波器，其中：The filter of claim 21, wherein:
    所述滤波器为2.515GHz-2.675GHz频段或3.3GHz-3.6GHz频段的滤波器；且The filter is a filter in the frequency band 2.515GHz-2.675GHz or in the frequency band 3.3GHz-3.6GHz; and
    所述滤波器中的谐振器的所述掺杂浓度的范围为14.4％-26.5％。The doping concentration of the resonators in the filter ranges from 14.4% to 26.5%.
  23. 根据权利要求22所述的滤波器，其中：The filter of claim 22, wherein:
    所述滤波器中的谐振器的所述掺杂浓度的范围为15.7％-26.5％。The doping concentration of the resonators in the filter ranges from 15.7% to 26.5%.
  24. 根据权利要求21所述的滤波器，其中：The filter of claim 21, wherein:
    所述滤波器为4.8GHz-4.96GHz频段的滤波器；且The filter is a filter in the 4.8GHz-4.96GHz frequency band; and
    所述滤波器中的谐振器的所述掺杂浓度的范围为1％-12.4％。The doping concentration of the resonators in the filter ranges from 1% to 12.4%.
  25. 根据权利要求24所述的滤波器，其中：The filter of claim 24, wherein:
    所述滤波器中的谐振器的所述掺杂浓度的范围为2.6％-12.4％。The doping concentration of the resonators in the filter ranges from 2.6% to 12.4%.
  26. 根据权利要求21所述的滤波器，其中：The filter of claim 21, wherein:
    所述滤波器为5.15GHz-5.85GHz频段的滤波器；且The filter is a filter in the 5.15GHz-5.85GHz frequency band; and
    所述滤波器中的谐振器的所述掺杂浓度的范围为28.5％-37％。The doping concentration of the resonators in the filter ranges from 28.5% to 37%.
  27. 根据权利要求26所述的滤波器，其中：The filter of claim 26, wherein:
    所述滤波器中的谐振器的所述掺杂浓度的范围为28.8％-37％。The doping concentration of the resonators in the filter ranges from 28.8% to 37%.
  28. 一种掺杂浓度确定方法，所述掺杂浓度为体声波谐振器的压电层的掺杂元素的掺杂浓度，所述谐振器具有机电耦合系数Kt 2，所述谐振器的谐振频率高于2.5GHz且具有层厚比E/P，所述方法包括步骤： A method for determining a doping concentration, wherein the doping concentration is the doping concentration of a doping element of a piezoelectric layer of a bulk acoustic wave resonator, the resonator has an electromechanical coupling coefficient Kt 2 , and the resonant frequency of the resonator is high At 2.5GHz and having a layer thickness ratio E/P, the method includes the steps:
    基于层厚比E/P，选择所述掺杂浓度小于a1，a1为谐振器层厚比E/P＝3时所述机电耦合系数Kt 2对应的掺杂浓度。 Based on the layer thickness ratio E/P, the doping concentration is selected to be less than a1, and a1 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the resonator layer thickness ratio E/P=3.
  29. 根据权利要求28所述的方法，其中：The method of claim 28, wherein:
    所述压电层为掺杂有钪元素的氮化铝层，a1由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and a1 is determined by the following formula:
    Kt 2＝0.2977a1 2+0.2085a1+0.033。 Kt 2 =0.2977a1 2 +0.2085a1+0.033.
  30. 根据权利要求28所述的方法，其中：The method of claim 28, wherein:
    选择所述掺杂浓度不小于b1，b1为层厚比E/P＝0.75时所述机电耦合系数Kt 2对应的掺杂浓度。 The doping concentration is selected to be not less than b1, and b1 is the doping concentration corresponding to the electromechanical coupling coefficient Kt 2 when the layer thickness ratio E/P=0.75.
  31. 根据权利要求30所述的方法，其中：The method of claim 30, wherein:
    所述压电层为掺杂有钪元素的氮化铝层，b1由如下公式确定：The piezoelectric layer is an aluminum nitride layer doped with scandium, and b1 is determined by the following formula:
    Kt 2＝0.3909b1 2+0.3056b1+0.062。 Kt 2 =0.3909b1 2 +0.3056b1+0.062.
  32. 一种电子设备，包括根据权利要求21-27中任一项所述的滤波器，或根据权利要求1-20中任一项所述的体声波谐振器。An electronic device comprising a filter according to any one of claims 21-27, or a bulk acoustic wave resonator according to any one of claims 1-20.
PCT/CN2021/117934 2020-09-30 2021-09-13 Bulk acoustic resonator, doping concentration determination method, filter, and electronic device WO2022068562A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202011065223.8 2020-09-30
CN202011065223.8A CN114337572A (en) 2020-09-30 2020-09-30 Bulk acoustic wave resonator, doping concentration determination method, filter, and electronic device

Publications (1)

Publication Number Publication Date
WO2022068562A1 true WO2022068562A1 (en) 2022-04-07

Family

ID=80949646

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/117934 WO2022068562A1 (en) 2020-09-30 2021-09-13 Bulk acoustic resonator, doping concentration determination method, filter, and electronic device

Country Status (2)

Country Link
CN (1) CN114337572A (en)
WO (1) WO2022068562A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115001428A (en) * 2022-07-11 2022-09-02 深圳新声半导体有限公司 Film concentration doping method for film filter

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115133899A (en) * 2021-03-29 2022-09-30 诺思(天津)微系统有限责任公司 Bulk acoustic wave resonator having tungsten electrode, filter, and electronic device
CN114866058B (en) * 2022-07-06 2023-02-17 深圳新声半导体有限公司 Bulk acoustic wave filter based on Sc doping concentration change

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109889177A (en) * 2018-12-26 2019-06-14 天津大学 Bulk acoustic wave resonator with doping isolation structure
CN111010131A (en) * 2019-06-06 2020-04-14 天津大学 Bulk acoustic wave resonator with variable doping concentration, filter and electronic device
CN111010120A (en) * 2019-09-20 2020-04-14 天津大学 Bulk acoustic wave resonator, filter, and electronic device having adjustment layer
CN111030636A (en) * 2019-07-15 2020-04-17 天津大学 Bulk acoustic wave resonator with acoustic impedance mismatch structure, filter and electronic device
CN111313857A (en) * 2019-11-29 2020-06-19 天津大学 Bulk acoustic wave resonator, filter, and electronic device provided with insertion structure and temperature compensation layer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109889177A (en) * 2018-12-26 2019-06-14 天津大学 Bulk acoustic wave resonator with doping isolation structure
CN111010131A (en) * 2019-06-06 2020-04-14 天津大学 Bulk acoustic wave resonator with variable doping concentration, filter and electronic device
CN111030636A (en) * 2019-07-15 2020-04-17 天津大学 Bulk acoustic wave resonator with acoustic impedance mismatch structure, filter and electronic device
CN111010120A (en) * 2019-09-20 2020-04-14 天津大学 Bulk acoustic wave resonator, filter, and electronic device having adjustment layer
CN111313857A (en) * 2019-11-29 2020-06-19 天津大学 Bulk acoustic wave resonator, filter, and electronic device provided with insertion structure and temperature compensation layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115001428A (en) * 2022-07-11 2022-09-02 深圳新声半导体有限公司 Film concentration doping method for film filter

Also Published As

Publication number Publication date
CN114337572A (en) 2022-04-12

Similar Documents

Publication Publication Date Title
WO2022068562A1 (en) Bulk acoustic resonator, doping concentration determination method, filter, and electronic device
WO2021042741A1 (en) Bulk acoustic wave resonator with piezoelectric layer having insert structure, and filter and electronic device
EP4033660A1 (en) Bulk acoustic resonator with adjusting layer, and filter and electronic device
US11018651B2 (en) Bulk acoustic wave resonators having doped piezoelectric material and an adhesion and diffusion barrier layer
WO2022083352A1 (en) Bulk acoustic resonator and assembly, filter, and electronic device
WO2022148387A1 (en) Bulk acoustic wave resonator and manufacturing method therefor, filter, and electronic device
WO2020134803A1 (en) Bulk acoustic wave resonator having asymmetric electrode thickness, filter, and electronic device
CN111953314B (en) Filter design method, filter, multiplexer and communication equipment
CN114079430A (en) Bulk acoustic wave resonator with laminated bump structure, method of manufacturing the same, filter, and electronic apparatus
WO2022062910A1 (en) Bulk acoustic resonator and assembly, method for adjusting electromechanical coupling coefficient difference, and filter and electronic device
EP3902138A1 (en) Resonator with effective area reduced based on element doping, filter and electronic device
WO2022037572A1 (en) Bulk acoustic resonator with top electrode having upper and lower gaps, manufacturing method therefor, filter, and electronic device
WO2022068552A1 (en) Bulk acoustic resonator, doping concentration determination method, filter, and electronic device
WO2022068561A1 (en) Bulk acoustic resonator, doping concentration determining method, filter, and electronic device
CN110868185A (en) Bulk acoustic wave resonator and semiconductor device
WO2024087628A1 (en) Bulk acoustic wave resonator for selecting angle of protruding structure to improve performance
CN114553169A (en) Bulk acoustic wave resonator, filter and electronic device using convex structure to reduce acoustic impedance
WO2023030359A1 (en) Bulk acoustic resonator comprising gap electrode, filter and electronic device
WO2022001861A1 (en) Bulk acoustic resonator having insertion layer to increase power, and filter and electronic device
CN217037147U (en) Acoustic resonator, filter comprising the same, and duplexer and multiplexer comprising the same
WO2022135252A1 (en) Bulk acoustic resonator having temperature compensation layer, and filter and electronic device
CN111355464A (en) Device for adjusting effective electromechanical coupling coefficient based on annular protrusion
CN114257199A (en) Bulk acoustic wave resonator having acoustic resistance layer, assembly and manufacturing method thereof, filter, and electronic device
WO2022247902A1 (en) Bulk acoustic resonator comprising silicon carbide substrate, filter, and electronic device
WO2022161135A1 (en) Filter having scandium-doped aluminum nitride as piezoelectric layer and electronic device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21874223

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21874223

Country of ref document: EP

Kind code of ref document: A1