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WO2022065804A1 - Low-dielectric-constant polyimide film and manufacturing method therefor - Google Patents

Low-dielectric-constant polyimide film and manufacturing method therefor Download PDF

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Publication number
WO2022065804A1
WO2022065804A1 PCT/KR2021/012687 KR2021012687W WO2022065804A1 WO 2022065804 A1 WO2022065804 A1 WO 2022065804A1 KR 2021012687 W KR2021012687 W KR 2021012687W WO 2022065804 A1 WO2022065804 A1 WO 2022065804A1
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Prior art keywords
dianhydride
mol
component
polyimide film
diamine
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PCT/KR2021/012687
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French (fr)
Korean (ko)
Inventor
조민상
이길남
Original Assignee
피아이첨단소재 주식회사
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Priority to CN202180064230.2A priority Critical patent/CN116194512A/en
Publication of WO2022065804A1 publication Critical patent/WO2022065804A1/en

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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/06Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1042Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2379/00Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
    • C08J2379/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08J2379/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors

Definitions

  • the present invention relates to a low-k polyimide film having improved dielectric properties and a method for manufacturing the same.
  • Polyimide (PI) is a polymer material with the highest level of heat resistance, chemical resistance, electrical insulation, chemical resistance, and weather resistance among organic materials based on an imide ring with excellent chemical stability along with a rigid aromatic main chain. am.
  • Such a thin circuit board has a structure in which a circuit including a metal foil is formed on a polyimide film that is easy to bend while having excellent heat resistance, low temperature resistance and insulating properties is widely used.
  • a flexible metal clad laminate is mainly used, and as an example, a flexible copper clad laminate (FCCL) using a thin copper plate as a metal foil is included.
  • FCCL flexible copper clad laminate
  • polyimide is also used as a protective film and insulating film for thin circuit boards.
  • the dielectric properties are not excellent enough to maintain sufficient insulation in high-frequency communication.
  • the insulator has a low dielectric characteristic, it is possible to reduce the occurrence of undesirable stray capacitance and noise in the thin circuit board, thereby substantially solving the cause of communication delay.
  • polyimide with low dielectric properties is recognized as the most important factor in the performance of thin circuit boards.
  • Dielectric dissipation factor (Df) refers to the degree of dissipation of electrical energy in a thin circuit board, and is closely related to the signal propagation delay that determines communication speed. It is recognized as an important factor in the performance of the substrate.
  • the polyimide film contains more moisture, the dielectric constant increases and the dielectric loss factor increases.
  • a polyimide film it is suitable as a material for a thin circuit board due to its excellent intrinsic properties, but may be relatively vulnerable to moisture due to polar imide groups, which may deteriorate insulation properties.
  • Patent Document 1 Republic of Korea Patent Publication No. 10-2015-0069318
  • An object of the present invention is to provide a polyimide film having high heat resistance, low dielectric properties, and low moisture absorption properties, and a method for manufacturing the same.
  • a dianhydride component comprising a biphenyltetracarboxylic dianhydride (BPDA) and a pyromellitic dianhydride (PMDA); and
  • the content of m-tolidine is 30 mol% or more and 50 mol% or less
  • the content of paraphenylene diamine is 50 mol% or more and 70 mol% or less
  • polyimide film is provided.
  • the content of the biphenyltetracarboxylic dianhydride is 45 mol% or more and 65 mol% or less, based on 100 mol% of the total content of the dianhydride component, and pyromelliticdian
  • the content of hydride (PMDA) may be 35 mol% or more and 55 mol% or less.
  • the polyimide film may include a block copolymer consisting of two or more blocks.
  • a first block obtained by imidizing a dianhydride component containing biphenyltetracarboxylic dianhydride and a diamine component containing m-tolidine and paraphenylene diamine;
  • the polyimide film may have a glass transition temperature (Tg) of 300° C. or more and a dielectric loss factor (Df) of 0.003 or less.
  • moisture permeability may be 0.02 (g/(m 2 *day))/ ⁇ m) or less, and the thermal expansion coefficient may be 15 to 18 ppm/°C.
  • Another embodiment of the present invention comprises the steps of: (a) polymerizing a first dianhydride component and a first diamine component in an organic solvent to prepare a first polyamic acid;
  • the first dianhydride component and the second dianhydride component each include at least one selected from the group consisting of biphenyltetracarboxylic dianhydride (BPDA) and pyromellitic dianhydride (PMDA),
  • BPDA biphenyltetracarboxylic dianhydride
  • PMDA pyromellitic dianhydride
  • the first diamine component and the second diamine component each include at least one selected from the group consisting of m-tolidine and paraphenylene diamine (PPD),
  • the content of m-tolidine is 30 mol% or more and 50 mol% or less
  • the content of paraphenylene diamine is 50 mol% or more It provides a method for producing a polyimide film, which is 70 mol% or less.
  • the present invention provides a multilayer film comprising the above-described polyimide film and a thermoplastic resin layer.
  • the present invention provides a flexible metal clad laminate comprising the above-described polyimide film and an electrically conductive metal foil.
  • the polyimide film according to the embodiment of the present invention can have low dielectric properties and high heat resistance properties by minimizing moisture absorption and air permeability by using a specific dianhydride component and a specific diamine component in a specific molar ratio in combination.
  • the present invention can implement high-speed communication at a high frequency of 10 GHz or more including the polyimide film as described above, and thus can be usefully applied to electronic components such as flexible metal clad laminates.
  • dianhydride is intended to include precursors or derivatives thereof, which may not technically be dianhydride acids, but will nevertheless react with a diamine to form a polyamic acid, which in turn is a polyamic acid can be converted into mids.
  • diamine is intended to include precursors or derivatives thereof, which may not technically be diamines, but will nevertheless react with dianhydrides to form polyamic acids, which in turn are polyamic acids. can be converted into mids.
  • the polyimide film according to the present invention is prepared by imidizing a polyamic acid solution containing a dianhydride component and a diamine component.
  • the dianhydride component may include at least one selected from the group consisting of biphenyltetracarboxylic dianhydride (BPDA) and pyromellitic dianhydride (PMDA).
  • BPDA biphenyltetracarboxylic dianhydride
  • PMDA pyromellitic dianhydride
  • the diamine component may include at least one selected from the group consisting of m-tolidine and paraphenylene diamine (PPD).
  • PPD paraphenylene diamine
  • the polyimide film of the present invention includes a dianhydride component including biphenyltetracarboxylic dianhydride (BPDA) and pyromellitic dianhydride (PMDA), m-tolidine and It can be obtained by imidating a polyamic acid solution containing a diamine component including paraphenylene diamine (PPD).
  • BPDA biphenyltetracarboxylic dianhydride
  • PMDA pyromellitic dianhydride
  • m-tolidine m-tolidine
  • PPD paraphenylene diamine
  • the present invention can implement the crystallinity of the film through the biphenyltetracarboxylic dianhydride (BPDA) and m-tolidine (m-tolidine).
  • BPDA biphenyltetracarboxylic dianhydride
  • m-tolidine m-tolidine
  • the content of m-tolidine is 0 mol% or more and 50 mol% or less, based on 100 mol% of the total content of the diamine component, and the content of paraphenylene diamine It may be 50 mol% or more and 70 mol% or less.
  • the m-tolidine may be included in an amount of 30 mol% or more and 50 mol% or less.
  • Such m-tolidine has a particularly hydrophobic methyl group, and thus may contribute to the low moisture absorption properties of the polyimide film.
  • m-tolidine and paraphenylene diamine are included in the diamine component in the above content range, low dielectric properties may be obtained and low transmission loss characteristics may be obtained even at high frequencies.
  • the content of the biphenyltetracarboxylic dianhydride (BPDA) is 45 mol% or more and 65 mol% or less, based on 100 mol% of the total content of the dianhydride component, and pyromellitic dianhydride
  • the content of the ride (PMDA) may be 35 mol% or more and 55 mol% or less.
  • the content of the biphenyltetracarboxylic dianhydride (BPDA) is 45 mol% or more and 55 mol% or less
  • the content of the pyromellitic dianhydride (PMDA) is 45 mol% or more and 55 mol% or less
  • BPDA biphenyltetracarboxylic dianhydride
  • PMDA pyromellitic dianhydride
  • the mechanical properties of the polyimide film are improved, and to prepare a flexible metal clad laminate It is possible to secure an appropriate level of heat resistance.
  • the polyimide chain derived from biphenyltetracarboxylic dianhydride has a structure called a charge transfer complex (CTC), that is, an electron donor and an electron acceptor. It has a regular linear structure positioned close to each other, and the intermolecular interaction is strengthened.
  • CTC charge transfer complex
  • this structure Since this structure has an effect of preventing hydrogen bonding with moisture, it can affect the lowering of the moisture absorption rate of moisture, thereby maximizing the effect of lowering the moisture permeability of the polyimide film.
  • the pyromellitic dianhydride included as the dianhydride component is preferable in that it has a relatively rigid structure and can impart appropriate elasticity to the polyimide film.
  • the content ratio of dianhydride is particularly important. For example, as the content ratio of biphenyltetracarboxylic dianhydride decreases, it becomes difficult to expect a low moisture absorption rate due to the CTC structure.
  • biphenyltetracarboxylic dianhydride contains two benzene rings corresponding to the aromatic moiety
  • pyromellitic dianhydride contains one benzene ring corresponding to the aromatic moiety
  • An increase in the pyromellitic dianhydride content in the dianhydride component can be understood as an increase in the imide group in the molecule based on the same molecular weight. It can be understood that the ratio of the imide groups derived from the pyromellitic dianhydride in the polyimide polymer chain is relatively increased compared to the imide groups derived from the biphenyltetracarboxylic dianhydride.
  • the increase in the pyromellitic dianhydride content can be seen as a relative increase in the imide group for the entire polyimide film, and thus it is difficult to expect a low moisture absorption rate.
  • the polyimide film may include a block copolymer consisting of two or more blocks, for example, may include two blocks.
  • Each of the two blocks is a first block obtained by imidating a dianhydride component containing biphenyltetracarboxylic dianhydride and a diamine component containing m-tolidine and paraphenylene diamine. ; and a second block obtained by imidizing a dianhydride component including biphenyltetracarboxylic dianhydride and pyromellitic dianhydride and a diamine component including m-tolidine.
  • the first block and the second block may be formed by imidation of specific monomers, respectively.
  • the polyimide film according to the present invention includes a first block having low dielectric properties and film forming processability through heat resistance and a second block for strengthening low dielectric properties through crystallinity to achieve desired high heat resistance, low dielectric properties and low dielectric properties. It may exhibit hygroscopic properties.
  • the polyimide film of the present invention can secure a glass transition temperature (Tg) of 300° C. or higher and a dielectric loss factor (Df) of 0.003 or less, thereby exhibiting high heat resistance and low dielectric properties.
  • the polyid film controls crystallization through a second block containing biphenyltetracarboxylic dianhydride and m-tolidine to minimize moisture absorption and moisture permeability, thereby improving low dielectric strength. properties can be implemented.
  • the present invention provides interlayer dimensional stability by appropriately controlling the content of biphenyltetracarboxylic dianhydride used in forming the second block as necessary to have a coefficient of thermal expansion of 15 to 18 ppm/°C similar to copper foil. can be obtained
  • the polyimide film according to the present invention may have a glass transition temperature (Tg) of 300° C. or more and a dielectric loss factor (Df) of 0.003 or less.
  • Tg glass transition temperature
  • Df dielectric loss factor
  • moisture permeability it may be 0.02 (g/(m 2 *day))/ ⁇ m) or less
  • thermal expansion coefficient it may be 15 to 18 ppm/°C.
  • the polyimide film satisfying the above-described dielectric loss factor (Df), glass transition temperature, moisture permeability and/or thermal expansion coefficient range can be used as an insulating film for flexible metal clad laminates, and the manufactured flexible metal clad laminate Even if it is used as an electrical signal transmission circuit that transmits a signal at a high frequency of GHz or higher, its insulation stability can be secured and signal transmission delay can be minimized.
  • Df dielectric loss factor
  • glass transition temperature glass transition temperature
  • moisture permeability and/or thermal expansion coefficient range can be used as an insulating film for flexible metal clad laminates, and the manufactured flexible metal clad laminate Even if it is used as an electrical signal transmission circuit that transmits a signal at a high frequency of GHz or higher, its insulation stability can be secured and signal transmission delay can be minimized.
  • the "dielectric loss factor” means a force dissipated by a dielectric (or insulator) when friction of molecules interferes with molecular motion caused by an alternating electric field.
  • the value of the dielectric loss factor is commonly used as an index indicating the ease of dissipation of electric charge (dielectric loss). The higher the dielectric loss factor, the easier it is to dissipate the charge. there is. That is, since the dielectric loss factor is a measure of power loss, the lower the dielectric loss factor, the faster the communication speed can be maintained while signal transmission delay due to power loss is alleviated.
  • the polyimide film which is an insulating film
  • the polyimide film according to the present invention may have a dielectric loss factor of 0.004 or less under a very high frequency of 10 GHz.
  • the moisture permeability which indicates the amount of moisture contained in the material, is generally known to increase the dielectric constant and dielectric loss rate when the moisture permeability is high.
  • the dielectric constant is greater than 100, in a liquid state, about 80, and when water vapor in a gaseous state, it is 1.0059.
  • the dielectric constant and dielectric loss factor of the polyimide film may be dramatically increased.
  • the dielectric constant and dielectric loss factor of the polyimide film may change rapidly with only a small amount of moisture absorption.
  • the polyimide film according to the present invention may have a moisture permeability of 0.02 (g/(m 2 *day))/ ⁇ m) or less, and the achievement of this is due to the structural characteristics of the polyimide film according to the present invention.
  • the polyimide film according to the present invention satisfies all of the above conditions, so it can be used as an insulating film for flexible metal clad laminates, and insulation stability can be secured even at high frequencies, and signal transmission delay is minimized can do.
  • the preparation of the polyamic acid is, for example,
  • the polymerization method is not limited to the above examples, and any known method may be used for the preparation of the first to third polyamic acids.
  • (d) forming a film of the precursor composition including the third polyamic acid on a support, and then imidizing the film may include.
  • the first dianhydride component and the second dianhydride component may each include at least one selected from the group consisting of biphenyltetracarboxylic dianhydride (BPDA) and pyromellitic dianhydride (PMDA).
  • BPDA biphenyltetracarboxylic dianhydride
  • PMDA pyromellitic dianhydride
  • first diamine component and the second diamine component include at least one selected from the group consisting of m-tolidine and paraphenylene diamine (PPD).
  • PPD paraphenylene diamine
  • the content of m-tolidine is 30 mol% or more and 50 mol% or less
  • the content of paraphenylene diamine is 50 mol% or more 70 mol% or less.
  • the content of the biphenyltetracarboxylic dianhydride is 45 mol% or more and 65 mol% or less, and pyromellitic
  • the content of dianhydride (PMDA) may be 35 mol% or more and 55 mol% or less.
  • the first polyamic acid includes a dianhydride component including biphenyltetracarboxylic dianhydride and a diamine component including m-tolidine and paraphenylene diamine
  • the second polyamic acid may include a dianhydride component including biphenyltetracarboxylic dianhydride and pyromellitic dianhydride and a diamine component including m-tolidine.
  • the polymerization method of the polyamic acid as described above can be defined as a random polymerization method, and the polyimide film prepared from the polyamic acid of the present invention prepared by the above process has a dielectric loss factor (Df) and It can be preferably applied in terms of maximizing the effect of the present invention for lowering moisture absorption and air permeability.
  • Df dielectric loss factor
  • the polymerization method of the polyamic acid may be a block polymerization method.
  • combining a polyamic acid is not specifically limited, Any solvent can be used as long as it is a solvent in which a polyamic acid is dissolved, It is preferable that it is an amide type solvent.
  • the solvent may be an organic polar solvent, specifically an aprotic polar solvent, for example, N,N-dimethylformamide (DMF), N,N- It may be at least one selected from the group consisting of dimethylacetamide, N-methyl-pyrrolidone (NMP), gamma butyrolactone (GBL), and Diglyme, but is not limited thereto. It can be used in combination of 2 or more types.
  • DMF N,N-dimethylformamide
  • NMP N-methyl-pyrrolidone
  • GBL gamma butyrolactone
  • Diglyme Diglyme
  • N,N-dimethylformamide and N,N-dimethylacetamide may be particularly preferably used.
  • a filler may be added for the purpose of improving various properties of the film, such as sliding properties, thermal conductivity, corona resistance, and loop hardness.
  • the filler to be added is not particularly limited, but preferred examples thereof include silica, titanium oxide, alumina, silicon nitride, boron nitride, calcium hydrogen phosphate, calcium phosphate, mica, and the like.
  • the particle size of the filler is not particularly limited, and may be determined according to the characteristics of the film to be modified and the type of filler to be added. Generally, the average particle diameter is 0.05 to 100 ⁇ m, preferably 0.1 to 75 ⁇ m, more preferably 0.1 to 50 ⁇ m, particularly preferably 0.1 to 25 ⁇ m.
  • the modifying effect becomes difficult to appear, and when the particle size exceeds this range, the surface properties may be greatly impaired or the mechanical properties may be greatly reduced.
  • the added amount of a filler is 0.01 to 100 parts by weight, preferably 0.01 to 90 parts by weight, and more preferably 0.02 to 80 parts by weight based on 100 parts by weight of polyimide.
  • the method of adding a filler is not specifically limited, Any well-known method can also be used.
  • the polyimide film may be prepared by thermal imidization and chemical imidization.
  • it may be prepared by a complex imidization method in which thermal imidization and chemical imidization are combined.
  • the thermal imidization method is a method in which a chemical catalyst is excluded and the imidization reaction is induced by a heat source such as hot air or an infrared dryer.
  • the thermal imidization method can imidize the amic acid group present in the gel film by heat-treating the gel film at a variable temperature in the range of 100 to 600 ° C., specifically 200 to 500 ° C., more specifically, The amic acid group present in the gel film can be imidized by heat treatment at 300 to 500 °C.
  • the polyamic acid composition is dried at a variable temperature in the range of 50 °C to 200 °C. and may also be included in the scope of the thermal imidization method.
  • a polyimide film may be prepared by using a dehydrating agent and an imidizing agent according to a method known in the art.
  • a polyimide film can be manufactured.
  • the polyimide film of the present invention manufactured according to the above manufacturing method may have a glass transition temperature (Tg) of 320° C. or higher, a moisture absorption rate of 0.4% or lower, and a dielectric loss factor (Df) of 0.004 or lower.
  • Tg glass transition temperature
  • Df dielectric loss factor
  • the present invention provides a multilayer film including the above-described polyimide film and a thermoplastic resin layer, and a flexible metal clad laminate including the above-described polyimide film and an electrically conductive metal foil.
  • thermoplastic resin layer for example, a thermoplastic polyimide resin layer or the like may be applied.
  • the metal foil to be used is not particularly limited, but when the flexible metal foil laminate of the present invention is used for electronic devices or electrical devices, for example, copper or copper alloy, stainless steel or its alloy, nickel or nickel alloy (42 alloy). Also included), it may be a metal foil comprising aluminum or an aluminum alloy.
  • copper foils such as rolled copper foils and electrolytic copper foils are often used, and they can be preferably used in the present invention as well.
  • the antirust layer, the heat-resistant layer, or the adhesive layer may be apply
  • the thickness of the metal foil is not particularly limited, and may have a thickness capable of exhibiting a sufficient function according to its use.
  • a metal foil is laminated on one surface of the polyimide film, or an adhesive layer containing a thermoplastic polyimide is added to one surface of the polyimide film, and the metal foil is attached to the adhesive layer. It may have a laminated structure.
  • the present invention also provides an electronic component including the flexible metal clad laminate as an electrical signal transmission circuit.
  • the electrical signal transmission circuit may be an electronic component that transmits a signal at a high frequency of at least 2 GHz, specifically, a high frequency of at least 5 GHz, and more specifically, a high frequency of at least 10 GHz.
  • the electronic component may be, for example, a communication circuit for a portable terminal, a communication circuit for a computer, or a communication circuit for aerospace, but is not limited thereto.
  • DMF was introduced while nitrogen was injected into a 500 ml reactor equipped with a stirrer and nitrogen injection and discharge tube, and the temperature of the reactor was set to 30 ° C.
  • a diamine component m-tolidine and paraphenylene diamine; Biphenyltetracarboxylic dianhydride is added as a dianhydride component to confirm that it is completely dissolved.
  • a first polyamic acid having a viscosity of 200,000 cP at 23°C was prepared after stirring was continued for 120 minutes while heating and raising the temperature to 40°C in a nitrogen atmosphere.
  • NMP was introduced while nitrogen was injected into a 500 ml reactor equipped with a stirrer and nitrogen injection/discharge tube, and the temperature of the reactor was set to 30° C., m-tolidine as a diamine component, and biphenyltetracarboxylic dian Confirm that the hydride and pyromellitic dianhydride are completely dissolved.
  • a second polyamic acid having a viscosity of 200,000 cP at 23°C was prepared after stirring was continued for 120 minutes while heating and raising the temperature to 40°C in a nitrogen atmosphere.
  • the temperature of the first polyamic acid and the second polyamic acid was raised to 40° C. under a nitrogen atmosphere and stirring was continued for 120 minutes while heating, the final viscosity at 23° C. was 200,000 cP, and the diamine component and dianhydride acid
  • a third polyamic acid including the components as shown in Table 1 was prepared.
  • the third polyamic acid prepared above was bubbled through a high-speed rotation of 1,500 rpm or more. Thereafter, the polyamic acid and the catalyst are mixed and mixed, followed by film casting, and dried under a nitrogen atmosphere and at a temperature of 90-200° C. for 30 minutes to prepare a gel film, and the gel film is heated to 450° C. at a rate of 2° C./min. The temperature was raised, heat treatment was performed at 450° C. for 60 minutes, and cooling was performed to 30° C. at a rate of 2° C./min to obtain a polyimide film.
  • the polyimide film was peeled off the glass substrate by dipping in distilled water.
  • the thickness of the prepared polyimide film was 15 ⁇ m.
  • the thickness of the prepared polyimide film was measured using an Anritsu film thickness tester (Electric Film thickness tester).
  • Example 1 a polyimide film was prepared in the same manner as in Example 1, except that the components and their contents were respectively changed as shown in Table 1 below.
  • Dianhydride component (mol%) Diamine component (mol%) Polyamic acid polymerization method BPDA (mol%) PMDA (mol%) m-Tolidine (mol%) PPD (mol%)
  • Example 1 55 45 40 60 block polymerization Example 2 60 40 46 54 block polymerization Example 3 60 40 34 66 block polymerization Example 4 48 52 46 54 block polymerization Comparative Example 1 40 60 90 10 block polymerization Comparative Example 2 50 50 60 40 block polymerization Comparative Example 3 40 60 100 - block polymerization Comparative Example 4 60 40 100 - block polymerization Comparative Example 5 50 50 50 50 block polymerization
  • Moisture permeability was measured using a Permatran-W 3/33 MA instrument at 38 ⁇ 2°C, 100% R.H. (Measurement standards are in accordance with ASTM F1249).
  • the dielectric loss factor (Df) was measured by leaving the flexible metal clad laminate for 72 hours using an Agilent 4294A ohmmeter.
  • CTE coefficient of thermal expansion
  • the glass transition temperature (T g ) was obtained by obtaining the loss modulus and storage modulus of each film using DMA, and the inflection point was measured as the glass transition temperature in their tangent graph.
  • the polyimide film prepared according to the embodiment of the present invention exhibits a remarkably low dielectric loss factor of 0.003 or less, and the glass transition temperature is at a desired level.
  • the moisture permeability also showed excellent results, and it was found that the filmization was well implemented because it had excellent flatness because wrinkles did not occur.
  • Comparative Examples 2 and 4 it can be seen that the filmization is not realized because the flatness of the film is not constant due to the inflow of wrinkles. From this, it can be expected that the comparative examples are difficult to be used in electronic components in which signals are transmitted at high frequencies in the unit of gigabytes.
  • the polyimide film according to the embodiment of the present invention can have low dielectric properties and high heat resistance properties by minimizing moisture absorption and air permeability by using a specific dianhydride component and a specific diamine component in a specific molar ratio in combination.
  • the present invention can implement high-speed communication at a high frequency of 10 GHz or more, including the polyimide film as described above, and thus can be usefully applied to electronic components such as flexible metal clad laminates.

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Abstract

The present invention relates to a polyimide film and a manufacturing method therefor, the polyimide film being manufactured by imidizing a polyamic acid solution comprising: an acid dianhydride component comprising a biphenyltetracarboxylic dianhydride (BPDA) and a pyromellitic dianhydride (PMDA); and a diamine component comprising m-tolidine and p-phenylenediamine (PPD), wherein, on the basis of 100 mol% of the total amount of the diamine component, the amount of m-tolidine is 30-50 mol% and the amount of PPD is 50-70 mol%.

Description

저유전 폴리이미드 필름 및 이의 제조방법Low dielectric polyimide film and manufacturing method thereof
본 발명은 유전특성이 개선된 저유전 폴리이미드 필름 및 이의 제조방법에 관한 것이다.The present invention relates to a low-k polyimide film having improved dielectric properties and a method for manufacturing the same.
폴리이미드(polyimide, PI)는 강직한 방향족 주쇄와 함께 화학적 안정성이 매우 우수한 이미드 고리를 기초로 하여, 유기 재료들 중에서도 최고 수준의 내열성, 내약품성, 전기 절연성, 내화학성, 내후성을 가지는 고분자 재료이다.Polyimide (PI) is a polymer material with the highest level of heat resistance, chemical resistance, electrical insulation, chemical resistance, and weather resistance among organic materials based on an imide ring with excellent chemical stability along with a rigid aromatic main chain. am.
특히, 뛰어난 절연특성, 즉 낮은 유전율과 같은 우수한 전기적 특성으로 전기, 전자, 광학 분야 등에 이르기까지 고기능성 고분자 재료로 각광받고 있다.In particular, due to excellent insulating properties, that is, excellent electrical properties such as low dielectric constant, it is in the spotlight as a high-functional polymer material in the fields of electricity, electronics, and optics.
최근, 전자제품이 경량화, 소형화되어 감에 따라서, 집적도가 높고 유연한 박형 회로기판이 활발히 개발되고 있다.In recent years, as electronic products become lighter and smaller, thin circuit boards with a high degree of integration and flexibility are being actively developed.
이러한 박형 회로기판은 우수한 내열성, 내저온성 및 절연특성을 가지면서도 굴곡이 용이한 폴리이미드 필름 상에 금속박을 포함하는 회로가 형성되어 있는 구조가 많이 활용되는 추세이다. Such a thin circuit board has a structure in which a circuit including a metal foil is formed on a polyimide film that is easy to bend while having excellent heat resistance, low temperature resistance and insulating properties is widely used.
이러한 박형 회로기판으로는 연성금속박적층판이 주로 사용되고 있고, 한 예로, 금속박으로 얇은 구리판을 사용하는 연성동박적층판(Flexible Copper Clad Laminate, FCCL)이 포함된다. 그 밖에도 폴리이미드를 박형 회로기판의 보호 필름, 절연 필름 등으로 활용하기도 한다.As such a thin circuit board, a flexible metal clad laminate is mainly used, and as an example, a flexible copper clad laminate (FCCL) using a thin copper plate as a metal foil is included. In addition, polyimide is also used as a protective film and insulating film for thin circuit boards.
한편, 최근 전자 기기에 다양한 기능들이 내재됨에 따라 상기 전자기기에 빠른 연산 속도와 통신 속도가 요구되고 있으며, 이를 충족하기 위해 고주파로 고속 통신이 가능한 박형 회로기판이 개발되고 있다.On the other hand, as various functions are embedded in electronic devices in recent years, fast operation speed and communication speed are required for the electronic devices.
그러나, 통상의 폴리이미드의 경우 유전 특성이 고주파 통신에서 충분한 절연성을 유지할 수 있을 정도로 우수한 수준은 아닌 실정이다.However, in the case of conventional polyimide, the dielectric properties are not excellent enough to maintain sufficient insulation in high-frequency communication.
또한, 절연체가 저유전 특성을 지닐수록 박형 회로기판에서 바람직하지 않은 부유 용량(stray capacitance)과 노이즈의 발생을 감소시킬 수 있어, 통신 지연의 원인을 상당부분 해소할 수 있는 것으로 알려져 있다.In addition, it is known that, as the insulator has a low dielectric characteristic, it is possible to reduce the occurrence of undesirable stray capacitance and noise in the thin circuit board, thereby substantially solving the cause of communication delay.
따라서, 저유전 특성의 폴리이미드가 박형 회로기판의 성능에 무엇보다 중요한 요인으로 인식되고 있는 실정이다.Therefore, polyimide with low dielectric properties is recognized as the most important factor in the performance of thin circuit boards.
특히, 고주파 통신의 경우 필연적으로 폴리이미드를 통한 유전 손실(dielectric dissipation)이 발생하게 되는데. 유전 손실률(dielectric dissipation factor; Df)은 박형 회로기판의 전기 에너지 낭비 정도를 의미하고, 통신 속도를 결정하는 신호 전달 지연과 밀접하게 관계되어 있어, 폴리이미드의 유전 손실률을 가능한 낮게 유지하는 것도 박형 회로기판의 성능에 중요한 요인으로 인식되고 있다.In particular, in the case of high-frequency communication, dielectric dissipation inevitably occurs through polyimide. Dielectric dissipation factor (Df) refers to the degree of dissipation of electrical energy in a thin circuit board, and is closely related to the signal propagation delay that determines communication speed. It is recognized as an important factor in the performance of the substrate.
또한, 폴리이미드 필름에 습기가 많이 포함될수록 유전상수가 커지고 유전 손실률이 증가한다. 폴리이미드 필름의 경우 우수한 고유의 특성으로 인하여 박형 회로기판의 소재로서 적합한 반면, 극성을 띄는 이미드기에 의해 습기에 상대적으로 취약할 수 있으며, 이로 인해 절연 특성이 저하될 수 있다.In addition, as the polyimide film contains more moisture, the dielectric constant increases and the dielectric loss factor increases. In the case of a polyimide film, it is suitable as a material for a thin circuit board due to its excellent intrinsic properties, but may be relatively vulnerable to moisture due to polar imide groups, which may deteriorate insulation properties.
따라서, 폴리이미드 특유의 기계적 특성, 열적 특성 및 내화학 특성을 일정 수준으로 유지하면서도, 유전 특성, 특히 저유전 손실율의 폴리이미드 필름의 개발이 필요한 실정이다.Accordingly, there is a need to develop a polyimide film having dielectric properties, particularly low dielectric loss, while maintaining the mechanical properties, thermal properties, and chemical resistance properties unique to polyimide at a certain level.
[선행기술 문헌][Prior art literature]
[특허문헌][Patent Literature]
(특허문헌 1) 대한민국 공개특허공보 제10-2015-0069318호(Patent Document 1) Republic of Korea Patent Publication No. 10-2015-0069318
본 발명은 고내열 특성, 저유전 특성 및 저흡습 특성을 겸비한 폴리이미드 필름 및 이의 제조방법을 제공하는 데 목적이 있다.An object of the present invention is to provide a polyimide film having high heat resistance, low dielectric properties, and low moisture absorption properties, and a method for manufacturing the same.
이에 본 발명은 이의 구체적 실시예를 제공하는데 실질적인 목적이 있다.Accordingly, it is a practical object of the present invention to provide specific examples thereof.
상기와 같은 목적을 달성하기 위한 본 발명의 일 실시형태는, 비페닐테트라카르복실릭디안하이드라이드(BPDA) 및 피로멜리틱디안하이드라이드(PMDA)를 포함하는 이무수물산 성분; 및One embodiment of the present invention for achieving the above object is a dianhydride component comprising a biphenyltetracarboxylic dianhydride (BPDA) and a pyromellitic dianhydride (PMDA); and
m-톨리딘(m-tolidine) 및 파라페닐렌 디아민(PPD)을 포함하는 디아민 성분을 포함하는 폴리아믹산 용액을 이미드화하여 제조되며,It is prepared by imidizing a polyamic acid solution containing a diamine component including m-tolidine and paraphenylene diamine (PPD),
상기 디아민 성분의 총 함량 100 몰%를 기준으로, 상기 m-톨리딘의 함량이 30 몰% 이상 50 몰% 이하이고, 상기 파라페닐렌 디아민의 함량이 50 몰% 이상 70 몰% 이하인, 폴리이미드 필름을 제공한다.Based on 100 mol% of the total content of the diamine component, the content of m-tolidine is 30 mol% or more and 50 mol% or less, and the content of paraphenylene diamine is 50 mol% or more and 70 mol% or less, polyimide film is provided.
일 실시형태에 있어서, 상기 이무수물산 성분은 이무수물산 성분의 총함량 100 몰%를 기준으로 상기 비페닐테트라카르복실릭디안하이드라이드의 함량이 45 몰% 이상 65 몰% 이하이고, 피로멜리틱디안하이드라이드(PMDA)의 함량이 35 몰% 이상 55 몰% 이하일 수 있다.In one embodiment, in the dianhydride component, the content of the biphenyltetracarboxylic dianhydride is 45 mol% or more and 65 mol% or less, based on 100 mol% of the total content of the dianhydride component, and pyromelliticdian The content of hydride (PMDA) may be 35 mol% or more and 55 mol% or less.
일 실시형태에 있어서, 상기 폴리이미드 필름은 2이상의 블록으로 이루어진 블록 공중합체를 포함할 수 있다.In one embodiment, the polyimide film may include a block copolymer consisting of two or more blocks.
예를 들면, 비페닐테트라카르복실릭디안하이드라이드를 포함하는 이무수물산 성분과 m-톨리딘(m-tolidine) 및 파라페닐렌 디아민을 포함하는 디아민 성분을 이미드화 반응시켜 얻어진 제1 블록; 및For example, a first block obtained by imidizing a dianhydride component containing biphenyltetracarboxylic dianhydride and a diamine component containing m-tolidine and paraphenylene diamine; and
비페닐테트라카르복실릭디안하이드라이드 및 피로멜리틱디안하이드라이드를 포함하는 이무수물산 성분과 m-톨리딘을 포함하는 디아민 성분을 이미드화 반응시켜 얻어진 제2 블록;을 포함하는 블록 공중합체를 포함할 수 있다.A second block obtained by imidizing a dianhydride component containing biphenyltetracarboxylic dianhydride and pyromellitic dianhydride and a diamine component containing m-tolidine; can do.
상기 폴리이미드 필름은 유리전이온도(Tg)가 300℃ 이상이고, 유전손실율(Df)가 0.003 이하일 수 있다. The polyimide film may have a glass transition temperature (Tg) of 300° C. or more and a dielectric loss factor (Df) of 0.003 or less.
또한, 수분 투기성이 0.02(g/(m2*day))/㎛) 이하일 수 있으며, 열팽창 계수가 15 내지 18 ppm/℃일 수 있다.In addition, moisture permeability may be 0.02 (g/(m 2 *day))/㎛) or less, and the thermal expansion coefficient may be 15 to 18 ppm/℃.
본 발명의 다른 일 실시형태는, (a) 제1 이무수물산 성분 및 제1 디아민 성분을 유기용매 중에서 중합하여 제1 폴리아믹산을 제조하는 단계;Another embodiment of the present invention comprises the steps of: (a) polymerizing a first dianhydride component and a first diamine component in an organic solvent to prepare a first polyamic acid;
(b) 제2 이무수물산 성분 및 제2 디아민 성분을 유기용매 중에서 중합하여 제2 폴리아믹산을 제조하는 단계;(b) preparing a second polyamic acid by polymerizing the second dianhydride component and the second diamine component in an organic solvent;
(c) 상기 제1 폴리아믹산 및 제2 폴리아믹산을 유기용매 중에서 공중합하여 제3 폴리아믹산을 제조하는 단계; 및(c) preparing a third polyamic acid by copolymerizing the first polyamic acid and the second polyamic acid in an organic solvent; and
(d) 상기 제3 폴리아믹산을 포함하는 전구체 조성물을 지지체 상에 제막한 후, 이미드화하는 단계를 포함하고,(d) forming a film of the precursor composition including the third polyamic acid on a support, followed by imidization;
상기 제1 이무수물산 성분 및 제2 이무수물산 성분은 각각 비페닐테트라카르복실릭디안하이드라이드(BPDA) 및 피로멜리틱디안하이드라이드(PMDA)로 이루어진 그룹에서 선택된 1종 이상을 포함하고,The first dianhydride component and the second dianhydride component each include at least one selected from the group consisting of biphenyltetracarboxylic dianhydride (BPDA) and pyromellitic dianhydride (PMDA),
상기 제1 디아민 성분 및 제2 디아민 성분은 각각 m-톨리딘(m-tolidine) 및 파라페닐렌 디아민(PPD)로 이루어진 그룹에서 선택된 1종 이상을 포함하며,The first diamine component and the second diamine component each include at least one selected from the group consisting of m-tolidine and paraphenylene diamine (PPD),
상기 제1 디아민 성분 및 상기 제2 디아민 성분의 총 함량 100 몰%를 기준으로 상기 m-톨리딘의 함량이 30 몰% 이상 50 몰% 이하이고, 상기 파라페닐렌 디아민의 함량이 50 몰% 이상 70 몰% 이하인, 폴리이미드 필름의 제조방법을 제공한다.Based on 100 mol% of the total content of the first diamine component and the second diamine component, the content of m-tolidine is 30 mol% or more and 50 mol% or less, and the content of paraphenylene diamine is 50 mol% or more It provides a method for producing a polyimide film, which is 70 mol% or less.
또한, 본 발명은 상술한 폴리이미드 필름과, 열가소성 수지층을 포함하는 다층필름을 제공한다.In addition, the present invention provides a multilayer film comprising the above-described polyimide film and a thermoplastic resin layer.
또한, 본 발명은 상술한 상술한 폴리이미드 필름과, 전기전도성의 금속박을 포함하는 연성금속박적층판을 제공한다.In addition, the present invention provides a flexible metal clad laminate comprising the above-described polyimide film and an electrically conductive metal foil.
또한, 상기의 연성금속박적층판을 포함하는 전자 부품을 제공한다.In addition, it provides an electronic component including the flexible metal clad laminate.
본 발명의 구현예에 따른 폴리이미드 필름은 특정 이무수물산 성분과 특정 디아민 성분을 특정한 몰비로 조합하여 사용함으로써 수분의 흡습율과 투기성을 최소화 하여 저유전 특성 및 고내열 특성을 가질 수 있다.The polyimide film according to the embodiment of the present invention can have low dielectric properties and high heat resistance properties by minimizing moisture absorption and air permeability by using a specific dianhydride component and a specific diamine component in a specific molar ratio in combination.
또한, 본 발명은 상기와 같은 폴리이미드 필름을 포함하여 10 GHz 이상의 높은 주파수로 고속 통신을 구현할 수 있어 연성금속박적층판 등의 전자 부품 등에 유용하게 적용될 수 있다.In addition, the present invention can implement high-speed communication at a high frequency of 10 GHz or more including the polyimide film as described above, and thus can be usefully applied to electronic components such as flexible metal clad laminates.
이하에서, 본 발명에 따른 "폴리이미드 필름" 및 "폴리이미드 필름의 제조 방법"의 순서로 발명의 실시 형태를 보다 상세하게 설명한다.Hereinafter, embodiments of the invention will be described in more detail in the order of "polyimide film" and "method for producing polyimide film" according to the invention.
이에 앞서, 본 명세서 및 청구범위에 사용된 용어나 단어는 통상적이거나 사전적인 의미로 한정해서 해석되어서는 아니 되며, 발명자는 그 자신의 발명을 가장 최선의 방법으로 설명하기 위해 용어의 개념을 적절하게 정의할 수 있다는 원칙에 입각하여 본 발명의 기술적 사상에 부합하는 의미와 개념으로 해석되어야만 한다.Prior to this, the terms or words used in the present specification and claims should not be construed as being limited to conventional or dictionary meanings, and the inventor should properly understand the concept of the term in order to best describe his invention. Based on the principle that it can be defined, it should be interpreted as meaning and concept consistent with the technical idea of the present invention.
따라서, 본 명세서에 기재된 실시예의 구성은 본 발명의 가장 바람직한 하나의 실시예에 불과할 뿐이고 본 발명의 기술적 사상을 모두 대변하는 것은 아니므로, 본 출원시점에 있어서 이들을 대체할 수 있는 다양한 균등물과 변형예들이 존재할 수 있음을 이해하여야 한다.Accordingly, since the configuration of the embodiments described in the present specification is only one of the most preferred embodiments of the present invention and does not represent all the technical spirit of the present invention, various equivalents and modifications that can be substituted for them at the time of the present application It should be understood that examples may exist.
본 명세서에서 단수의 표현은 문맥상 명백하게 다르게 뜻하지 않는 한, 복수의 표현을 포함한다. 본 명세서에서, "포함하다", "구비하다" 또는 "가지다" 등의 용어는 실시된 특징, 숫자, 단계, 구성 요소 또는 이들을 조합한 것이 존재함을 지정하려는 것이지, 하나 또는 그 이상의 다른 특징들이나 숫자, 단계, 구성 요소, 또는 이들을 조합한 것들의 존재 또는 부가 가능성을 미리 배제하지 않는 것으로 이해되어야 한다.In this specification, the singular expression includes the plural expression unless the context clearly dictates otherwise. In the present specification, terms such as "comprise", "comprising" or "have" are intended to designate the existence of an embodied feature, number, step, element, or a combination thereof, but one or more other features or It should be understood that the existence or addition of numbers, steps, elements, or combinations thereof, is not precluded in advance.
본 명세서에서 양, 농도, 또는 다른 값 또는 파라미터가 범위, 바람직한 범위 또는 바람직한 상한 값 및 바람직한 하한 값의 열거로서 주어지는 경우, 범위가 별도로 개시되는 지에 상관없이 임의의 한 쌍의 임의의 위쪽 범위 한계치 또는 바람직한 값 및 임의의 아래쪽 범위 한계치 또는 바람직한 값으로 형성된 모든 범위를 구체적으로 개시하는 것으로 이해되어야 한다.Where an amount, concentration, or other value or parameter is given herein as a range, a preferred range, or a recitation of a preferred upper value and a lower preferred value, any pair of any upper limit of the range or It is to be understood that the preferred values and any lower range limits or all ranges formed by the preferred values are specifically disclosed.
수치 값의 범위가 범위가 본 명세서에서 언급될 경우, 달리 기술되지 않는다면, 그 범위는 그 종점 및 그 범위 내의 모든 정수와 분수를 포함하는 것으로 의도된다. 본 발명의 범주는 범위를 정의할 때 언급되는 특정 값으로 한정되지 않는 것으로 의도된다.When a range of numerical values is recited herein, the range is intended to include the endpoints and all integers and fractions within the range, unless otherwise stated. It is intended that the scope of the invention not be limited to the particular values recited when defining the ranges.
본 명세서에서 "이무수물산"은 그 전구체 또는 유도체를 포함하는 것으로 의도되는데, 이들은 기술적으로는 이무수물산이 아닐 수 있지만, 그럼에도 불구하고 디아민과 반응하여 폴리아믹산을 형성할 것이며, 이 폴리아믹산은 다시 폴리이미드로 변환될 수 있다.As used herein, “dianhydride” is intended to include precursors or derivatives thereof, which may not technically be dianhydride acids, but will nevertheless react with a diamine to form a polyamic acid, which in turn is a polyamic acid can be converted into mids.
본 명세서에서 "디아민"은 그의 전구체 또는 유도체를 포함하는 것으로 의도되는데, 이들은 기술적으로는 디아민이 아닐 수 있지만, 그럼에도 불구하고 디안하이드라이드와 반응하여 폴리아믹산을 형성할 것이며, 이 폴리아믹산은 다시 폴리이미드로 변환될 수 있다.As used herein, "diamine" is intended to include precursors or derivatives thereof, which may not technically be diamines, but will nevertheless react with dianhydrides to form polyamic acids, which in turn are polyamic acids. can be converted into mids.
본 발명에 따른 폴리이미드 필름은 이무수물산 성분과 디아민 성분을 포함하는 폴리아믹산 용액을 이미드화하여 제조된다.The polyimide film according to the present invention is prepared by imidizing a polyamic acid solution containing a dianhydride component and a diamine component.
상기 이무수물산 성분은 비페닐테트라카르복실릭디안하이드라이드(BPDA) 및 피로멜리틱디안하이드라이드(PMDA)로 이루어진 그룹에서 선택된 1종 이상을 포함할 수 있다.The dianhydride component may include at least one selected from the group consisting of biphenyltetracarboxylic dianhydride (BPDA) and pyromellitic dianhydride (PMDA).
상기 디아민 성분은 m-톨리딘(m-tolidine) 및 파라페닐렌 디아민(PPD)로 이루어진 그룹에서 선택된 1종 이상을 포함할 수 있다. The diamine component may include at least one selected from the group consisting of m-tolidine and paraphenylene diamine (PPD).
예를 들면, 본 발명의 폴리이미드 필름은 비페닐테트라카르복실릭디안하이드라이드(BPDA) 및 피로멜리틱디안하이드라이드(PMDA)를 포함하는 이무수물산 성분과 m-톨리딘(m-tolidine) 및 파라페닐렌 디아민(PPD)을 포함하는 디아민 성분을 포함하는 폴리아믹산 용액을 이미드화 반응시켜 얻어질 수 있다.For example, the polyimide film of the present invention includes a dianhydride component including biphenyltetracarboxylic dianhydride (BPDA) and pyromellitic dianhydride (PMDA), m-tolidine and It can be obtained by imidating a polyamic acid solution containing a diamine component including paraphenylene diamine (PPD).
본 발명은 상기 비페닐테트라카르복실릭디안하이드라이드(BPDA)와 m-톨리딘(m-tolidine)를 통해 필름의 결정성을 구현할 수 있다.The present invention can implement the crystallinity of the film through the biphenyltetracarboxylic dianhydride (BPDA) and m-tolidine (m-tolidine).
본 발명의 일 구현예에 따르면, 상기 디아민 성분은, 디아민 성분의 총 함량 100몰%를 기준으로 상기 m-톨리딘의 함량이 0 몰% 이상 50 몰% 이하이고, 상기 파라페닐렌 디아민의 함량이 50 몰% 이상 70 몰% 이하일 수 있다.According to one embodiment of the present invention, in the diamine component, the content of m-tolidine is 0 mol% or more and 50 mol% or less, based on 100 mol% of the total content of the diamine component, and the content of paraphenylene diamine It may be 50 mol% or more and 70 mol% or less.
바람직하게는, 상기 m-톨리딘은 30 몰% 이상 50 몰% 이하로 포함될 수 있다. 이러한 m-톨리딘은 특히 소수성을 띄는 메틸기를 가지고 있어서 폴리이미드 필름의 저흡습 특성에 기여할 수 있다.Preferably, the m-tolidine may be included in an amount of 30 mol% or more and 50 mol% or less. Such m-tolidine has a particularly hydrophobic methyl group, and thus may contribute to the low moisture absorption properties of the polyimide film.
본 발명에서, 디아민 성분에 m-톨리딘과 파라페닐렌 디아민이 상기 함량범위로 포함되는 경우, 낮은 유전특성을 가져 고주파에서도 저전송손실 특성을을 가질 수 있다.In the present invention, when m-tolidine and paraphenylene diamine are included in the diamine component in the above content range, low dielectric properties may be obtained and low transmission loss characteristics may be obtained even at high frequencies.
상기 이무수물산 성분은, 이무수물산 성분의 총 함량 100 몰%를 기준으로 상기 상기 비페닐테트라카르복실릭디안하이드라이드(BPDA)의 함량이 45 몰% 이상 65 몰% 이하이고, 피로멜리틱디안하이드라이드(PMDA)의 함량이 35 몰% 이상 55 몰% 이하일 수 있다. In the dianhydride component, the content of the biphenyltetracarboxylic dianhydride (BPDA) is 45 mol% or more and 65 mol% or less, based on 100 mol% of the total content of the dianhydride component, and pyromellitic dianhydride The content of the ride (PMDA) may be 35 mol% or more and 55 mol% or less.
바람직하게는, 상기 비페닐테트라카르복실릭디안하이드라이드(BPDA)의 함량이 45 몰% 이상 55 몰% 이하, 상기 피로멜리틱디안하이드라이드(PMDA)의 함량이 45 몰% 이상 55 몰% 이하일 수 있다. 상기 이수물산 성분에 비페닐테트라카르복실릭디안하이드라이드와 피로멜리틱디안하이드라이드(PMDA)가 상술한 함량범위로 포함되는 경우, 폴리이미드 필름의 기계적 물성이 향상되고, 연성금속박적층판을 제조하기에 적절한 수준의 내열성을 확보할 수 있다. 또한, 소망하는 수준의 유전 손실률 및 수분 투기성을 확보하는데 유리한 이점이 있다.Preferably, the content of the biphenyltetracarboxylic dianhydride (BPDA) is 45 mol% or more and 55 mol% or less, and the content of the pyromellitic dianhydride (PMDA) is 45 mol% or more and 55 mol% or less can When biphenyltetracarboxylic dianhydride and pyromellitic dianhydride (PMDA) are included in the above-mentioned content range in the dihydrate component, the mechanical properties of the polyimide film are improved, and to prepare a flexible metal clad laminate It is possible to secure an appropriate level of heat resistance. In addition, there are advantageous advantages in securing desired levels of dielectric loss rate and moisture permeability.
본 발명에서는 비페닐테트라카르복실릭디안하이드라이드로부터 유래된 폴리이미드 사슬은 전하이동착체(CTC: Charge transfer complex)라고 명명된 구조, 즉, 전자주게(electron donnor)와 전자받게(electron acceptor)가 서로 근접하게 위치하는 규칙적인 직선 구조를 가지게 되고 분자간 상호 작용(intermolecular interaction)이 강화된다.In the present invention, the polyimide chain derived from biphenyltetracarboxylic dianhydride has a structure called a charge transfer complex (CTC), that is, an electron donor and an electron acceptor. It has a regular linear structure positioned close to each other, and the intermolecular interaction is strengthened.
이러한 구조는 수분과의 수소결합을 방지하는 효과가 있으므로, 수분의 흡습률을 낮추는데 영향을 주어 폴리이미드 필름의 수분 투기성을 낮추는 효과를 극대화 할 수 있다.Since this structure has an effect of preventing hydrogen bonding with moisture, it can affect the lowering of the moisture absorption rate of moisture, thereby maximizing the effect of lowering the moisture permeability of the polyimide film.
또한, 상기 이무수물산 성분으로 포함되는 피로멜리틱디안하이드라이드는 상대적으로 강직한 구조를 가지며 폴리이미드 필름에 적절한 탄성을 부여할 수 있는 점에서 바람직하다.In addition, the pyromellitic dianhydride included as the dianhydride component is preferable in that it has a relatively rigid structure and can impart appropriate elasticity to the polyimide film.
폴리이미드 필름이 적절한 탄성과 흡습률을 동시에 만족하기 위해서는 이무수물산의 함량비가 특히 중요하다. 예를 들어, 비페닐테트라카르복실릭디안하이드라이드의 함량비가 감소할수록 상기 CTC 구조로 인한 낮은 흡습률을 기대하기 어려워진다.In order for the polyimide film to simultaneously satisfy appropriate elasticity and moisture absorption, the content ratio of dianhydride is particularly important. For example, as the content ratio of biphenyltetracarboxylic dianhydride decreases, it becomes difficult to expect a low moisture absorption rate due to the CTC structure.
또한, 비페닐테트라카르복실릭디안하이드라이드는 방향족 부분에 해당하는 벤젠 고리를 2개 포함하는 반면에, 피로멜리틱디안하이드라이드는 방향족 부분에 해당하는 벤젠 고리를 1개 포함한다. In addition, biphenyltetracarboxylic dianhydride contains two benzene rings corresponding to the aromatic moiety, whereas pyromellitic dianhydride contains one benzene ring corresponding to the aromatic moiety.
이무수물산 성분에서 피로멜리틱디안하이드라이드 함량의 증가는 동일한 분자량을 기준으로 했을 때 분자 내의 이미드기가 증가하는 것으로 이해할 수 있다. 이는 폴리이미드 고분자 사슬에 상기 피로멜리틱디안하이드라이드로부터 유래되는 이미드기의 비율이 비페닐테트라카르복실릭디안하이드라이드로부터 유래되는 이미드기 대비 상대적으로 증가하는 것으로 이해할 수 있다. An increase in the pyromellitic dianhydride content in the dianhydride component can be understood as an increase in the imide group in the molecule based on the same molecular weight. It can be understood that the ratio of the imide groups derived from the pyromellitic dianhydride in the polyimide polymer chain is relatively increased compared to the imide groups derived from the biphenyltetracarboxylic dianhydride.
즉, 피로멜리틱디안하이드라이드 함량의 증가는 폴리이미드 필름 전체에 대해서도, 이미드기의 상대적 증가로 볼 수 있고, 이로 인해 낮은 흡습률을 기대하기 어려워진다.That is, the increase in the pyromellitic dianhydride content can be seen as a relative increase in the imide group for the entire polyimide film, and thus it is difficult to expect a low moisture absorption rate.
반대로, 피로멜리틱디안하이드라이드의 함량비가 감소하면 상대적으로 강직한 구조의 성분이 감소하게 되어, 폴리이미드 필름의 기계적 특성이 소망하는 수준 이하로 저하될 수 있다.Conversely, when the content ratio of pyromellitic dianhydride is reduced, a component having a relatively rigid structure is reduced, and thus the mechanical properties of the polyimide film may be lowered to a desired level or less.
이러한 이유로 상기 비페닐테트라카르복실릭디안하이드라이드의 함량이 상기 범위를 상회하는 경우, 폴리이미드 필름의 기계적 물성이 저하되고, 연성금속박적층판을 제조하기에 적절한 수준의 내열성을 확보할 수 없다.For this reason, when the content of biphenyltetracarboxylic dianhydride exceeds the above range, mechanical properties of the polyimide film are deteriorated, and heat resistance at an appropriate level for manufacturing a flexible metal clad laminate cannot be secured.
반대로, 상기 비페닐테트라카르복실릭디안하이드라이드의 함량이 상기 범위를 하회하거나, 피로멜리틱디안하이드라이드의 함량이 상기 범위를 상회하는 경우, 적절한 수준의 유전상수, 유전 손실률 및 흡습률의 달성이 어려우므로 바람직하지 않다.Conversely, when the content of biphenyltetracarboxylic dianhydride is less than the above range or the content of pyromellitic dianhydride exceeds the above range, an appropriate level of dielectric constant, dielectric loss rate and moisture absorption rate are achieved. This is difficult because it is not preferable.
일 구현예에 있어서, 상기 폴리이미드 필름은 2이상의 블록으로 이루어진 블록 공중합체를 포함할 수 있고, 예를 들면, 2개의 블록을 포함할 수 있다.In one embodiment, the polyimide film may include a block copolymer consisting of two or more blocks, for example, may include two blocks.
상기 2개의 블록은 각각 비페닐테트라카르복실릭디안하이드라이드를 포함하는 이무수물산 성분과 m-톨리딘(m-tolidine) 및 파라페닐렌 디아민을 포함하는 디아민 성분을 이미드화 반응시켜 얻어진 제1 블록; 및 비페닐테트라카르복실릭디안하이드라이드 및 피로멜리틱디안하이드라이드를 포함하는 이무수물산 성분과 m-톨리딘을 포함하는 디아민 성분을 이미드화 반응시켜 얻어진 제2 블록일 수 있다. Each of the two blocks is a first block obtained by imidating a dianhydride component containing biphenyltetracarboxylic dianhydride and a diamine component containing m-tolidine and paraphenylene diamine. ; and a second block obtained by imidizing a dianhydride component including biphenyltetracarboxylic dianhydride and pyromellitic dianhydride and a diamine component including m-tolidine.
이처럼 상기 제1 블록 및 제2 블록은, 각각 특정 단량체들의 이미드화 반응에 의해 형성되는 것 일 수 있다. As such, the first block and the second block may be formed by imidation of specific monomers, respectively.
본 발명에 따른 폴리이미드 필름은 내열성을 통한 제막 공정성과 저유전 특성을 갖는 제 1 블록과 결정성을 통해 저유전 특성을 강화하는 제 2 블록을 포함하여 목적하는 고내열 특성, 저유전 특성 및 저흡습 특성을 나타낼 수 있다.The polyimide film according to the present invention includes a first block having low dielectric properties and film forming processability through heat resistance and a second block for strengthening low dielectric properties through crystallinity to achieve desired high heat resistance, low dielectric properties and low dielectric properties. It may exhibit hygroscopic properties.
예를 들면, 상기 제1 블록 형성시에 비페닐테트라카르복실릭디안하이드라이드, m-톨리딘(m-tolidine) 및 파라페닐렌 디아민의 함량을 필요에 따라 적절하게 조절하여 고내열성 및 저유전 특성을 확보할 수 있다. 즉, 본 발명의 폴리이미드 필름은 300℃ 이상의 유리전이온도 (Tg) 및 0.003 이하의 유전손실율(Df)을 확보할 수 있어 고내열성 및 저유전 특성을 나타낼 수 있다.For example, when the first block is formed, the contents of biphenyltetracarboxylic dianhydride, m-tolidine and paraphenylene diamine are appropriately adjusted as needed to achieve high heat resistance and low dielectric properties. characteristics can be obtained. That is, the polyimide film of the present invention can secure a glass transition temperature (Tg) of 300° C. or higher and a dielectric loss factor (Df) of 0.003 or less, thereby exhibiting high heat resistance and low dielectric properties.
또한, 상기 폴리이드 필름은 비페닐테트라카르복실릭디안하이드라이드 및 m-톨리딘(m-tolidine)를 포함하는 제2 블록을 통해 결정성화를 조절하여 수분 흡수율과 수분 투기성을 최소화하여 향상된 저유전 특성을 구현할 수 있다. In addition, the polyid film controls crystallization through a second block containing biphenyltetracarboxylic dianhydride and m-tolidine to minimize moisture absorption and moisture permeability, thereby improving low dielectric strength. properties can be implemented.
나아가, 본 발명은 상기 제2 블록 형성시 사용되는 비페닐테트라카르복실릭디안하이드라이드의 함량을 필요에 따라 적절히 제어하여 동박과 유사한 15 내지 18 ppm/℃의 열팽창 계수를 가짐으로써 층간 치수안정성을 확보할 수 있다.Furthermore, the present invention provides interlayer dimensional stability by appropriately controlling the content of biphenyltetracarboxylic dianhydride used in forming the second block as necessary to have a coefficient of thermal expansion of 15 to 18 ppm/℃ similar to copper foil. can be obtained
상술한 바와 같이, 본 발명에 따른 폴리이미드 필름은 유리전이온도(Tg)가 300℃ 이상이고, 유전손실율(Df)이 0.003 이하일 수 있다. 또한, 수분 투기성의 경우, 0.02(g/(m2*day))/㎛) 이하일 수 있으며, 열팽창 계수의 경우에는 15 내지 18 ppm/℃ 일 수 있다.As described above, the polyimide film according to the present invention may have a glass transition temperature (Tg) of 300° C. or more and a dielectric loss factor (Df) of 0.003 or less. In addition, in the case of moisture permeability, it may be 0.02 (g/(m 2 *day))/㎛) or less, and in the case of the thermal expansion coefficient, it may be 15 to 18 ppm/℃.
이와 관련하여, 상술한 유전 손실률(Df), 유리전이온도, 수분 투기성 및/또는 열팽창 계수 범위를 만족하는 폴리이미드 필름은, 연성금속박적층판용 절연 필름으로 활용 가능할뿐더러, 제조된 연성금속박적층판이 10 GHz 이상의 고주파로 신호를 전송하는 전기적 신호 전송 회로로 사용되더라도, 그것의 절연 안정성이 확보될 수 있고, 신호 전달 지연도 최소화할 수 있다.In this regard, the polyimide film satisfying the above-described dielectric loss factor (Df), glass transition temperature, moisture permeability and/or thermal expansion coefficient range can be used as an insulating film for flexible metal clad laminates, and the manufactured flexible metal clad laminate Even if it is used as an electrical signal transmission circuit that transmits a signal at a high frequency of GHz or higher, its insulation stability can be secured and signal transmission delay can be minimized.
상기 "유전 손실률"은 분자들의 마찰이 교대 전기장에 의해 야기된 분자 운동을 방해할 때 유전체(또는 절연체)에 의해 소멸되는 힘을 의미한다.The "dielectric loss factor" means a force dissipated by a dielectric (or insulator) when friction of molecules interferes with molecular motion caused by an alternating electric field.
유전 손실률의 값은 전하의 소실(유전 손실)의 용이성을 나타내는 지수로서 통상적으로 사용되며, 유전 손실률이 높을수록 전하가 소실되기가 쉬워지며, 반대로 유전 손실률이 낮을수록 전하가 소실되기가 어려워질 수 있다. 즉, 유전 손실률은 전력 손실의 척도인 바, 유전 손실률이 낮을 수록 전력 손실에 따른 신호 전송 지연이 완화되면서 통신 속도가 빠르게 유지될 수 있다.The value of the dielectric loss factor is commonly used as an index indicating the ease of dissipation of electric charge (dielectric loss). The higher the dielectric loss factor, the easier it is to dissipate the charge. there is. That is, since the dielectric loss factor is a measure of power loss, the lower the dielectric loss factor, the faster the communication speed can be maintained while signal transmission delay due to power loss is alleviated.
이것은 절연 필름인 폴리이미드 필름에 강력하게 요구되는 사항으로, 본 발명에 따른 폴리이미드 필름은 10 GHz의 매우 높은 주파수 하에서 유전 손실률이 0.004 이하일 수 있다.This is strongly required for the polyimide film, which is an insulating film, and the polyimide film according to the present invention may have a dielectric loss factor of 0.004 or less under a very high frequency of 10 GHz.
상기 수분 투기성은, 재료에 포함된 수분량을 나타내는 것으로서, 일반적으로 수분 투기성이 높을 때 유전상수 및 유전 손실률이 증가하는 것으로 알려져 있다.The moisture permeability, which indicates the amount of moisture contained in the material, is generally known to increase the dielectric constant and dielectric loss rate when the moisture permeability is high.
일반적으로, 물이 고체의 상태일 때, 유전상수가 100 이상이고, 액체 상태일 때, 약 80이며, 기체 상태의 수증기일 때, 1.0059로 알려져 있다.In general, it is known that when water is in a solid state, the dielectric constant is greater than 100, in a liquid state, about 80, and when water vapor in a gaseous state, it is 1.0059.
예컨데, 수증기 등이 폴리이미드 필름에 흡습된 상태에서 물은 액체 상태로 존재하게 되는데, 이러한 경우, 폴리이미드 필름의 유전상수와 유전 손실률은 비약적으로 높아질 수 있다.For example, water exists in a liquid state while water vapor is absorbed into the polyimide film. In this case, the dielectric constant and dielectric loss factor of the polyimide film may be dramatically increased.
즉, 미량의 수분 흡습만으로도 폴리이미드 필름의 유전상수와 유전 손실률은 급변할 수 있다.That is, the dielectric constant and dielectric loss factor of the polyimide film may change rapidly with only a small amount of moisture absorption.
본 발명에 따른 폴리이미드 필름은, 수분 투기성이 0.02(g/(m2*day))/㎛) 이하일 수 있으며, 이의 달성은 본 발명에 따른 폴리이미드 필름의 구성적 특징에 기인한다.The polyimide film according to the present invention may have a moisture permeability of 0.02 (g/(m 2 *day))/㎛) or less, and the achievement of this is due to the structural characteristics of the polyimide film according to the present invention.
이에 대해서는 후에 보다 구체적으로 설명할 것이나, 본 발명에 따른 폴리이미드 필름의 분자구조 중, 비극성 부분이 포함되어 있는 것에 기인하는 것으로 보인다.This will be described in more detail later, but it seems to be due to the inclusion of a non-polar portion in the molecular structure of the polyimide film according to the present invention.
이상에서 살펴본 바와 같이, 본 발명에 따른 폴리이미드 필름은, 상기한 조건들을 모두 만족함에 따라, 연성금속박적층판용 절연 필름으로 활용 가능할뿐더러, 고주파에도 절연 안정성이 확보될 수 있고, 신호 전달 지연도 최소화할 수 있다.As described above, the polyimide film according to the present invention satisfies all of the above conditions, so it can be used as an insulating film for flexible metal clad laminates, and insulation stability can be secured even at high frequencies, and signal transmission delay is minimized can do.
본 발명에서 폴리아믹산의 제조는 예를 들어,In the present invention, the preparation of the polyamic acid is, for example,
(1) 디아민 성분 전량을 용매 중에 넣고, 그 후 이무수물산 성분을 디아민 성분과 실질적으로 등몰이 되도록 첨가하여 중합하는 방법;(1) a method in which the whole amount of the diamine component is placed in a solvent, and then the dianhydride component is added so as to be substantially equimolar with the diamine component, followed by polymerization;
(2) 이무수물산 성분 전량을 용매 중에 넣고, 그 후 디아민 성분을 이무수물산 성분과 실질적으로 등몰이 되도록 첨가하여 중합하는 방법;(2) a method in which the entire amount of the dianhydride component is placed in a solvent, and then the diamine component is added so as to be substantially equimolar with the dianhydride component and polymerized;
(3) 디아민 성분 중 일부 성분을 용매 중에 넣은 후, 반응 성분에 대해서 이무수물산 성분 중 일부 성분을 약 95~105 몰%의 비율로 혼합한 후, 나머지 디아민 성분을 첨가하고 이에 연속해서 나머지 이무수물산 성분을 첨가하여, 디아민 성분 및 이무수물산 성분이 실질적으로 등몰이 되도록 하여 중합하는 방법;(3) After putting some of the diamine components in the solvent, mixing some of the dianhydride components with respect to the reaction components in a ratio of about 95 to 105 mol%, then adding the remaining diamine components and successively with the remaining dianhydride acid a method of polymerization by adding a component so that the diamine component and the dianhydride component are substantially equimolar;
(4) 이무수물산 성분을 용매 중에 넣은 후, 반응 성분에 대해서 디아민 화합물 중 일부 성분을 95~105 몰%의 비율로 혼합한 후, 다른 이무수물산 성분을 첨가하고 계속되어 나머지 디아민 성분을 첨가하여, 디아민 성분 및 이무수물산 성분이 실질적으로 등몰이 되도록 하여 중합하는 방법;(4) After putting the dianhydride component in the solvent, mixing some components of the diamine compound in a ratio of 95 to 105 mol% with respect to the reaction component, adding another dianhydride component, and then adding the remaining diamine components, a method of polymerization such that the diamine component and the dianhydride component are substantially equimolar;
(5) 용매 중에서 일부 디아민 성분과 일부 이무수물산 성분을 어느 하나가 과량이도록 반응시켜, 제1 조성물을 형성하고, 또 다른 용매 중에서 일부 디아민 성분과 일부 이무수물산 성분을 어느 하나가 과량이도록 반응시켜 제2 조성물을 형성한 후, 제1, 제2 조성물들을 혼합하고, 중합을 완결하는 방법으로서, 이 때 제1 조성물을 형성할 때 디아민 성분이 과잉일 경우, 제 2조성물에서는 이무수물산 성분을 과량으로 하고, 제1 조성물에서 이무수물산 성분이 과잉일 경우, 제2 조성물에서는 디아민 성분을 과량으로 하여, 제1, 제2 조성물들을 혼합하여 이들 반응에 사용되는 전체 디아민 성분과 이무수물산 성분이 실질적으로 등몰이 되도록 하여 중합하는 방법 등을 들 수 있다.(5) reacting some diamine component and some dianhydride component in an excess of any one in a solvent to form a first composition, and reacting some diamine component and some dianhydride component in another solvent so that any one is excessive 2 After forming the composition, the first and second compositions are mixed and polymerization is completed. At this time, when the diamine component is excessive when the first composition is formed, in the second composition, the dianhydride component is used in excess And, when the dianhydride component in the first composition is excessive, in the second composition, the diamine component is in excess, and the first and second compositions are mixed and the total diamine component and the dianhydride component used in these reactions are substantially the same The method of superposing|polymerizing so that it may become molar, etc. are mentioned.
다만, 상기 중합 방법이 이상의 예들로만 한정되는 것은 아니며, 상기 제1 내지 제3 폴리아믹산의 제조는 공지된 어떠한 방법을 사용할 수 있음은 물론이다.However, the polymerization method is not limited to the above examples, and any known method may be used for the preparation of the first to third polyamic acids.
하나의 구체적인 예에서, 본 발명에 따른 폴리이미드 필름의 제조방법은,In one specific example, the method for producing a polyimide film according to the present invention,
(a) 제1 이무수물산 성분 및 제1 디아민 성분을 유기용매 중에서 중합하여 제1 폴리아믹산을 제조하는 단계;(a) preparing a first polyamic acid by polymerizing the first dianhydride component and the first diamine component in an organic solvent;
(b) 제2 이무수물산 성분 및 제2 디아민 성분을 유기용매 중에서 중합하여 제2 폴리아믹산을 제조하는 단계;(b) preparing a second polyamic acid by polymerizing the second dianhydride component and the second diamine component in an organic solvent;
(c) 상기 제1 폴리아믹산 및 제2 폴리아믹산을 유기용매 중에서 공중합하여 제3 폴리아믹산을 제조하는 단계; 및(c) preparing a third polyamic acid by copolymerizing the first polyamic acid and the second polyamic acid in an organic solvent; and
(d) 상기 제3 폴리아믹산을 포함하는 전구체 조성물을 지지체 상에 제막한 후, 이미드화하는 단계를 포함할 수 있다.(d) forming a film of the precursor composition including the third polyamic acid on a support, and then imidizing the film may include.
상기 제1 이무수물산 성분 및 제2 이무수물산 성분은 각각 비페닐테트라카르복실릭디안하이드라이드(BPDA) 및 피로멜리틱디안하이드라이드(PMDA)로 이루어진 그룹에서 선택된 1종 이상을 포함할 수 있다.The first dianhydride component and the second dianhydride component may each include at least one selected from the group consisting of biphenyltetracarboxylic dianhydride (BPDA) and pyromellitic dianhydride (PMDA).
또한, 상기 제1 디아민 성분 및 제2 디아민 성분은 m-톨리딘(m-tolidine) 및 파라페닐렌 디아민(PPD)로 이루어진 그룹에서 선택된 1종 이상을 포함하는 것을 특징으로 한다.In addition, the first diamine component and the second diamine component include at least one selected from the group consisting of m-tolidine and paraphenylene diamine (PPD).
상기 제1 디아민 성분 및 상기 제2 디아민 성분의 총 함량 100 몰%를 기준으로 상기 m-톨리딘의 함량이 30 몰% 이상 50 몰% 이하이고, 상기 파라페닐렌 디아민의 함량이 50 몰% 이상 70 몰% 이하일 수 있다.Based on 100 mol% of the total content of the first diamine component and the second diamine component, the content of m-tolidine is 30 mol% or more and 50 mol% or less, and the content of paraphenylene diamine is 50 mol% or more 70 mol% or less.
또한, 상기 제1 이무수물산 성분 및 상기 제2 이무수물산 성분의 총 함량 100 몰%를 기준으로 상기 비페닐테트라카르복실릭디안하이드라이드의 함량이 45 몰% 이상 65 몰% 이하이고, 피로멜리틱디안하이드라이드(PMDA)의 함량이 35 몰% 이상 55 몰% 이하일 수 있다.In addition, based on 100 mol% of the total content of the first dianhydride component and the second dianhydride component, the content of the biphenyltetracarboxylic dianhydride is 45 mol% or more and 65 mol% or less, and pyromellitic The content of dianhydride (PMDA) may be 35 mol% or more and 55 mol% or less.
바람직하게는, 상기 제1 폴리아믹산은 비페닐테트라카르복실릭디안하이드라이드를 포함하는 이무수물산 성분과 m-톨리딘(m-tolidine) 및 파라페닐렌 디아민을 포함하는 디아민 성분을 포함하고, 상기 제2 폴리아믹산은 비페닐테트라카르복실릭디안하이드라이드 및 피로멜리틱디안하이드라이드를 포함하는 이무수물산 성분과 m-톨리딘을 포함하는 디아민 성분을 포함할 수 있다.Preferably, the first polyamic acid includes a dianhydride component including biphenyltetracarboxylic dianhydride and a diamine component including m-tolidine and paraphenylene diamine, The second polyamic acid may include a dianhydride component including biphenyltetracarboxylic dianhydride and pyromellitic dianhydride and a diamine component including m-tolidine.
본 발명에서는, 상기와 같은 폴리아믹산의 중합 방법을 임의(random) 중합 방식으로 정의할 수 있으며, 상기와 같은 과정으로 제조된 본 발명의 폴리아믹산으로부터 제조된 폴리이미드 필름은 유전 손실률(Df) 및 수분의 흡수율과 투기성을 낮추는 본 발명의 효과를 극대화시키는 측면에서 바람직하게 적용될 수 있다.In the present invention, the polymerization method of the polyamic acid as described above can be defined as a random polymerization method, and the polyimide film prepared from the polyamic acid of the present invention prepared by the above process has a dielectric loss factor (Df) and It can be preferably applied in terms of maximizing the effect of the present invention for lowering moisture absorption and air permeability.
다만, 상기 중합 방법은 앞서 설명한 고분자 사슬 내의 반복단위의 길이가 상대적으로 짧게 제조되므로, 이무수물산 성분으로부터 유래되는 폴리이미드 사슬이 가지는 각각의 우수한 특성을 발휘하기에는 한계가 있을 수 있다. 따라서, 본 발명에서 특히 바람직하게 이용될 수 있는 폴리아믹산의 중합 방법은 블록 중합 방식일 수 있다.However, in the polymerization method, since the length of the repeating unit in the above-described polymer chain is relatively short, there may be a limit in exhibiting excellent properties of the polyimide chain derived from the dianhydride component. Accordingly, the polymerization method of the polyamic acid that can be particularly preferably used in the present invention may be a block polymerization method.
한편, 폴리아믹산을 합성하기 위한 용매는 특별히 한정되는 것은 아니고, 폴리아믹산을 용해시키는 용매이면 어떠한 용매도 사용할 수 있지만, 아미드계 용매인 것이 바람직하다.On the other hand, the solvent for synthesize|combining a polyamic acid is not specifically limited, Any solvent can be used as long as it is a solvent in which a polyamic acid is dissolved, It is preferable that it is an amide type solvent.
구체적으로는, 상기 용매는 유기 극성 용매일 수 있고, 상세하게는 비양성자성 극성 용매(aprotic polar solvent)일 수 있으며, 예를 들어, N,N-디메틸포름아미드(DMF), N,N-디메틸아세트아미드, N-메틸-피롤리돈(NMP), 감마 브티로 락톤(GBL), 디그림(Diglyme)으로 이루어진 군에서 선택된 하나 이상일 수 있으나, 이에 제한되는 것은 아니며, 필요에 따라 단독으로 또는 2종 이상 조합해서 사용할 수 있다. Specifically, the solvent may be an organic polar solvent, specifically an aprotic polar solvent, for example, N,N-dimethylformamide (DMF), N,N- It may be at least one selected from the group consisting of dimethylacetamide, N-methyl-pyrrolidone (NMP), gamma butyrolactone (GBL), and Diglyme, but is not limited thereto. It can be used in combination of 2 or more types.
하나의 예에서, 상기 용매는 N,N-디메틸포름아미드 및 N,N-디메틸아세트아미드가 특히 바람직하게 사용될 수 있다.In one example, as the solvent, N,N-dimethylformamide and N,N-dimethylacetamide may be particularly preferably used.
또한, 폴리아믹산 제조 공정에서는 접동성, 열전도성, 코로나 내성, 루프 경도 등의 필름의 여러 가지 특성을 개선할 목적으로 충전재를 첨가할 수도 있다. 첨가되는 충전재는 특별히 한정되는 것은 아니지만, 바람직한 예로는 실리카, 산화티탄, 알루미나, 질화규소, 질화붕소, 인산수소칼슘, 인산칼슘, 운모 등을 들 수 있다.In addition, in the polyamic acid manufacturing process, a filler may be added for the purpose of improving various properties of the film, such as sliding properties, thermal conductivity, corona resistance, and loop hardness. The filler to be added is not particularly limited, but preferred examples thereof include silica, titanium oxide, alumina, silicon nitride, boron nitride, calcium hydrogen phosphate, calcium phosphate, mica, and the like.
충전재의 입경은 특별히 한정되는 것은 아니고, 개질하여야 할 필름 특성과 첨가하는 충전재의 종류과 따라서 결정하면 된다. 일반적으로는, 평균 입경이 0.05 내지 100 ㎛, 바람직하게는 0.1 내지 75 ㎛, 더욱 바람직하게는 0.1 내지 50 ㎛, 특히 바람직하게는 0.1 내지 25 ㎛이다.The particle size of the filler is not particularly limited, and may be determined according to the characteristics of the film to be modified and the type of filler to be added. Generally, the average particle diameter is 0.05 to 100 μm, preferably 0.1 to 75 μm, more preferably 0.1 to 50 μm, particularly preferably 0.1 to 25 μm.
입경이 이 범위를 하회하면 개질 효과가 나타나기 어려워지고, 이 범위를 상회하면 표면성을 크게 손상시키거나, 기계적 특성이 크게 저하되는 경우가 있다.When the particle size is less than this range, the modifying effect becomes difficult to appear, and when the particle size exceeds this range, the surface properties may be greatly impaired or the mechanical properties may be greatly reduced.
또한, 충전재의 첨가량에 대해서도 특별히 한정되는 것은 아니고, 개질하여야 할 필름 특성이나 충전재 입경 등에 의해 결정하면 된다. 일반적으로, 충전재의 첨가량은 폴리이미드 100 중량부에 대하여 0.01 내지 100 중량부, 바람직하게는 0.01 내지 90 중량부, 더욱 바람직하게는 0.02 내지 80 중량부이다.Moreover, it is not specifically limited also about the addition amount of a filler, What is necessary is just to determine by the film characteristic to be modified|reformed, a filler particle diameter, etc. In general, the added amount of the filler is 0.01 to 100 parts by weight, preferably 0.01 to 90 parts by weight, and more preferably 0.02 to 80 parts by weight based on 100 parts by weight of polyimide.
충전재 첨가량이 이 범위를 하회하면, 충전재에 의한 개질 효과가 나타나기 어렵고, 이 범위를 상회하면 필름의 기계적 특성이 크게 손상될 가능성이 있다. 충전재의 첨가 방법은 특별히 한정되는 것은 아니고, 공지된 어떠한 방법을 이용할 수도 있다.When the filler addition amount is less than this range, the modifying effect by the filler is difficult to appear, and when it exceeds this range, the mechanical properties of the film may be greatly impaired. The method of adding a filler is not specifically limited, Any well-known method can also be used.
본 발명의 제조방법에서 폴리이미드 필름은 열 이미드화법 및 화학적 이미드화법에 의해서 제조될 수 있다.In the manufacturing method of the present invention, the polyimide film may be prepared by thermal imidization and chemical imidization.
또한, 열 이미드화법 및 화학적 이미드화법이 병행되는 복합 이미드화법에 의해서 제조될 수도 있다.Also, it may be prepared by a complex imidization method in which thermal imidization and chemical imidization are combined.
상기 열 이미드화법이란, 화학적 촉매를 배제하고, 열풍이나 적외선 건조기 등의 열원으로 이미드화 반응을 유도하는 방법이다.The thermal imidization method is a method in which a chemical catalyst is excluded and the imidization reaction is induced by a heat source such as hot air or an infrared dryer.
상기 열 이미드화법은 상기 겔 필름을 100 내지 600 ℃의 범위의 가변적인 온도에서 열처리하여 겔 필름에 존재하는 아믹산기를 이미드화할 수 있으며, 상세하게는 200 내지 500 ℃, 더욱 상세하게는, 300 내지 500 ℃에서 열처리하여 겔 필름에 존재하는 아믹산기를 이미드화할 수 있다.The thermal imidization method can imidize the amic acid group present in the gel film by heat-treating the gel film at a variable temperature in the range of 100 to 600 ° C., specifically 200 to 500 ° C., more specifically, The amic acid group present in the gel film can be imidized by heat treatment at 300 to 500 °C.
다만, 겔 필름을 형성하는 과정에서도 아믹산 중 일부(약 0.1 몰% 내지 10 몰%)가 이미드화될 수 있으며, 이를 위해 50 ℃ 내지 200 ℃의 범위의 가변적인 온도에서 폴리아믹산 조성물을 건조할 수 있고, 이 또한 상기 열 이미드화법의 범주에 포함될 수 있다.However, in the process of forming the gel film, some of the amic acid (about 0.1 mol% to 10 mol%) may be imidized, and for this purpose, the polyamic acid composition is dried at a variable temperature in the range of 50 ℃ to 200 ℃. and may also be included in the scope of the thermal imidization method.
화학적 이미드화법의 경우, 당업계에 공지된 방법에 따라 탈수제 및 이미드화제를 이용하여, 폴리이미드 필름을 제조할 수 있다.In the case of chemical imidization, a polyimide film may be prepared by using a dehydrating agent and an imidizing agent according to a method known in the art.
복합이미드화법의 한예로는 폴리아믹산 용액에 탈수제 및 이미드화 제를 투입한 후 80 내지 200℃, 바람직하게는 100 내지 180℃에서 가열하여, 부분적으로 경화 및 건조한 후에 200 내지 400℃에서 5 내지 400 초간 가열함으로써 폴리이미드 필름을 제조할 수 있다.As an example of the complex imidization method, after adding a dehydrating agent and an imidizing agent to a polyamic acid solution, heating at 80 to 200° C., preferably 100 to 180° C., partially curing and drying, at 200 to 400° C. 5 to 400 By heating for a second, a polyimide film can be manufactured.
이상과 같은 제조방법에 따라 제조된 본 발명의 폴리이미드 필름은 유리전이온도(Tg)가 320℃ 이상이고, 흡습율이 0.4% 이하이며, 유전손실율(Df)가 0.004 이하인 일 수 있다.The polyimide film of the present invention manufactured according to the above manufacturing method may have a glass transition temperature (Tg) of 320° C. or higher, a moisture absorption rate of 0.4% or lower, and a dielectric loss factor (Df) of 0.004 or lower.
본 발명은, 상술한 폴리이미드 필름과 열가소성 수지층을 포함하는 다층 필름 및 상술한 폴리이미드 필름과 전기전도성의 금속박을 포함하는 연성금속박적층판을 제공한다.The present invention provides a multilayer film including the above-described polyimide film and a thermoplastic resin layer, and a flexible metal clad laminate including the above-described polyimide film and an electrically conductive metal foil.
상기 열가소성 수지층으로는 예를 들어 열가소성 폴리이미드 수지층 등이 적용될 수 있다.As the thermoplastic resin layer, for example, a thermoplastic polyimide resin layer or the like may be applied.
사용하는 금속박으로는 특별히 한정되는 것은 아니지만, 전자 기기 또는 전기 기기용도에 본 발명의 연성금속박적층판을 이용하는 경우에는, 예를 들면 구리 또는 구리 합금, 스테인레스강 또는 그의 합금, 니켈 또는 니켈 합금(42 합금도 포함함), 알루미늄 또는 알루미늄 합금을 포함하는 금속박일 수 있다.The metal foil to be used is not particularly limited, but when the flexible metal foil laminate of the present invention is used for electronic devices or electrical devices, for example, copper or copper alloy, stainless steel or its alloy, nickel or nickel alloy (42 alloy). Also included), it may be a metal foil comprising aluminum or an aluminum alloy.
일반적인 연성금속박적층판에서는 압연 동박, 전해 동박이라는 구리박이 많이 사용되며, 본 발명에서도 바람직하게 사용할 수 있다. 또한, 이들 금속박의 표면에는 방청층, 내열층 또는 접착층이 도포되어 있을 수도 있다.In general flexible metal clad laminates, copper foils such as rolled copper foils and electrolytic copper foils are often used, and they can be preferably used in the present invention as well. Moreover, the antirust layer, the heat-resistant layer, or the adhesive layer may be apply|coated on the surface of these metal foils.
본 발명에서 상기 금속박의 두께에 대해서는 특별히 한정되는 것은 아니고, 그 용도에 따라서 충분한 기능을 발휘할 수 있는 두께이면 된다.In the present invention, the thickness of the metal foil is not particularly limited, and may have a thickness capable of exhibiting a sufficient function according to its use.
본 발명에 따른 연성금속박적층판은, 상기 폴리이미드 필름의 일면에 금속박이 라미네이트되어 있거나, 상기 폴리이미드 필름의 일면에 열가소성 폴리이미드를 함유하는 접착층이 부가되어 있고, 상기 금속박이 접착층에 부착된 상태에서 라미네이트되어있는 구조일 수 있다. In the flexible metal clad laminate according to the present invention, a metal foil is laminated on one surface of the polyimide film, or an adhesive layer containing a thermoplastic polyimide is added to one surface of the polyimide film, and the metal foil is attached to the adhesive layer. It may have a laminated structure.
본 발명은 또한, 상기 연성금속박적층판을 전기적 신호 전송 회로로서 포함하는 전자 부품을 제공한다. 상기 전기적 신호 전송 회로는, 적어도 2 GHz의 고주파, 상세하게는 적어도 5 GHz의 고주파, 더욱 상세하게는 적어도 10 GHz의 고주파로 신호를 전송하는 전자 부품일 수 있다. The present invention also provides an electronic component including the flexible metal clad laminate as an electrical signal transmission circuit. The electrical signal transmission circuit may be an electronic component that transmits a signal at a high frequency of at least 2 GHz, specifically, a high frequency of at least 5 GHz, and more specifically, a high frequency of at least 10 GHz.
상기 전자 부품은 예를 들어, 휴대 단말기용 통신 회로, 컴퓨터용 통신 회로, 또는 우주 항공용 통신회로일 수 있으나 이것으로 한정되는 것은 아니다.The electronic component may be, for example, a communication circuit for a portable terminal, a communication circuit for a computer, or a communication circuit for aerospace, but is not limited thereto.
이하, 발명의 구체적인 실시예를 통해, 발명의 작용 및 효과를 보다 상술하기로 한다. 다만, 이러한 실시예는 발명의 예시로 제시된 것에 불과하며, 이에 의해 발명의 권리범위가 정해지는 것은 아니다.Hereinafter, through specific examples of the invention, the operation and effect of the invention will be described in more detail. However, these embodiments are merely presented as an example of the invention, and the scope of the invention is not defined thereby.
<실시예 1><Example 1>
교반기 및 질소 주입·배출관을 구비한 500 ㎖ 반응기에 질소를 주입시키면서 DMF을 투입하고 반응기의 온도를 30℃로 설정한 후 디아민 성분으로서 m-톨리딘(m-tolidine) 및 파라페닐렌 디아민과, 이무수물산 성분으로서 비페닐테트라카르복실릭디안하이드라이드를 투입하여 완전히 용해된 것을 확인한다. 질소 분위기하에 40℃로 온도를 올려 가열하면서 120 분간 교반을 계속한 후, 23℃에서의 점도가 200,000 cP를 나타내는 제1 폴리아믹산을 제조하였다.DMF was introduced while nitrogen was injected into a 500 ml reactor equipped with a stirrer and nitrogen injection and discharge tube, and the temperature of the reactor was set to 30 ° C. As a diamine component, m-tolidine and paraphenylene diamine; Biphenyltetracarboxylic dianhydride is added as a dianhydride component to confirm that it is completely dissolved. A first polyamic acid having a viscosity of 200,000 cP at 23°C was prepared after stirring was continued for 120 minutes while heating and raising the temperature to 40°C in a nitrogen atmosphere.
교반기 및 질소 주입·배출관을 구비한 500 ㎖ 반응기에 질소를 주입시키면서 NMP을 투입하고 반응기의 온도를 30℃로 설정한 후 디아민 성분으로서 m-톨리딘, 이무수물산 성분으로서 비페닐테트라카르복실릭디안하이드라이드 및 피로멜리틱디안하이드라이드를 투입하여 완전히 용해된 것을 확인한다. 질소 분위기하에 40℃로 온도를 올려 가열하면서 120 분간 교반을 계속한 후, 23℃에서의 점도가 200,000 cP를 나타내는 제2 폴리아믹산을 제조하였다.NMP was introduced while nitrogen was injected into a 500 ml reactor equipped with a stirrer and nitrogen injection/discharge tube, and the temperature of the reactor was set to 30° C., m-tolidine as a diamine component, and biphenyltetracarboxylic dian Confirm that the hydride and pyromellitic dianhydride are completely dissolved. A second polyamic acid having a viscosity of 200,000 cP at 23°C was prepared after stirring was continued for 120 minutes while heating and raising the temperature to 40°C in a nitrogen atmosphere.
이이서, 상기 제1 폴리아믹산 및 제2 폴리아믹산을 질소 분위기하에 40℃로 온도를 올려 가열하면서 120 분간 교반을 계속한 후, 23℃에서의 최종 점도가 200,000 cP를 나타내고, 디아민 성분 및 이무수물산 성분을 하기 표 1과 같이 포함하는 제3 폴리아믹산을 제조하였다.Then, the temperature of the first polyamic acid and the second polyamic acid was raised to 40° C. under a nitrogen atmosphere and stirring was continued for 120 minutes while heating, the final viscosity at 23° C. was 200,000 cP, and the diamine component and dianhydride acid A third polyamic acid including the components as shown in Table 1 was prepared.
상기에서 제조된 제3 폴리아믹산을 1,500 rpm 이상의 고속 회전을 통해 기포를 제거하였다. 이후 폴리아믹산과 촉매제를 혼합하여 Mixing 한 후 필름 캐스팅하여 질소 분위기하 및 90-200℃의 온도에서 30 분 동안 건조하여 겔 필름을 제조하고, 상기 겔 필름을 450℃까지 2 ℃/분의 속도로 승온하고, 450℃에서 60 분 동안 열처리하고, 30℃까지 2 ℃/분의 속도로 냉각하여 폴리이미드 필름을 수득하였다.The third polyamic acid prepared above was bubbled through a high-speed rotation of 1,500 rpm or more. Thereafter, the polyamic acid and the catalyst are mixed and mixed, followed by film casting, and dried under a nitrogen atmosphere and at a temperature of 90-200° C. for 30 minutes to prepare a gel film, and the gel film is heated to 450° C. at a rate of 2° C./min. The temperature was raised, heat treatment was performed at 450° C. for 60 minutes, and cooling was performed to 30° C. at a rate of 2° C./min to obtain a polyimide film.
이후 증류수에 디핑(dipping)하여 유리 기판에서 폴리이미드 필름을 박리시켰다. 제조된 폴리이미드 필름의 두께는 15 ㎛였다. 제조된 폴리이미드 필름의 두께는 Anritsu사의 필름 두께 측정기(Electric Film thickness tester)를 사용하여 측정하였다.Thereafter, the polyimide film was peeled off the glass substrate by dipping in distilled water. The thickness of the prepared polyimide film was 15 μm. The thickness of the prepared polyimide film was measured using an Anritsu film thickness tester (Electric Film thickness tester).
<실시예 2 내지 4 및 비교예 1 내지 5><Examples 2 to 4 and Comparative Examples 1 to 5>
실시예 1에서, 성분 및 이의 함량을 각각 하기 표 1과 같이 변경한 것을 제외하고, 실시예 1과 동일한 방법으로 폴리이미드 필름을 제조하였다. In Example 1, a polyimide film was prepared in the same manner as in Example 1, except that the components and their contents were respectively changed as shown in Table 1 below.
  이무수물산 성분 (몰%)Dianhydride component (mol%) 디아민 성분 (몰%)Diamine component (mol%) 폴리아믹산 중합 방식Polyamic acid polymerization method
BPDA (몰%)BPDA (mol%) PMDA(몰%)PMDA (mol%) m-Tolidine(몰%)m-Tolidine (mol%) PPD(몰%)PPD (mol%)
실시예1Example 1 5555 4545 4040 6060 블록 중합block polymerization
실시예2Example 2 6060 4040 4646 5454 블록 중합block polymerization
실시예3Example 3 6060 4040 3434 6666 블록 중합block polymerization
실시예4Example 4 4848 5252 4646 5454 블록 중합block polymerization
비교예1Comparative Example 1 4040 6060 9090 1010 블록 중합block polymerization
비교예2Comparative Example 2 5050 5050 6060 4040 블록 중합block polymerization
비교예3Comparative Example 3 4040 6060 100100 -- 블록 중합block polymerization
비교예4Comparative Example 4 6060 4040 100100 -- 블록 중합block polymerization
비교예5Comparative Example 5 5050 5050 5050 5050 블록 중합block polymerization
실험예Experimental example
실시예 1 내지 실시예 4, 비교예 1 내지 비교예 5에서 각각 제조한 폴리이미드 필름에 대해서 수분 투기성, 유전 손실율, 열적 특성(열팽창 계수 및 유리 전이 온도) 및 필름화 특성을 평가하고 그 결과를 하기 표 2에 나타내었다.For the polyimide films prepared in Examples 1 to 4 and Comparative Examples 1 to 5, respectively, moisture permeability, dielectric loss rate, thermal properties (coefficient of thermal expansion and glass transition temperature) and film formation properties were evaluated, and the results were evaluated. It is shown in Table 2 below.
(1) 수분 투기성(1) moisture permeability
수분투기성은 Permatran-W 3/33 MA 기기를 사용하여 38±2℃, 100%R.H 환경에서 측정하였다 (측정 기준은 ASTM F1249에 준함).Moisture permeability was measured using a Permatran-W 3/33 MA instrument at 38±2°C, 100% R.H. (Measurement standards are in accordance with ASTM F1249).
(2) 유전 손실률 측정(2) Measurement of dielectric loss factor
유전 손실률(Df)은 저항계 Agilent 4294A을 사용하여 72 시간동안 연성금속박적층판을 방치하여 측정하였다The dielectric loss factor (Df) was measured by leaving the flexible metal clad laminate for 72 hours using an Agilent 4294A ohmmeter.
(3) 열팽창 계수 측정(3) Measurement of coefficient of thermal expansion
열팽창 계수(CTE)는 TA사 열기계 분석기(thermomechanical analyzer) Q400 모델을 사용하였으며, 폴리이미드 필름을 폭 4 mm, 길이 20 mm로 자른 후 질소 분위기하에서 0.05 N의 장력을 가하면서, 10 ℃/min의 속도로 상온에서 300℃까지 승온 후 다시 10 ℃/min의 속도로 냉각하면서 100℃ 에서 200℃ 구간의 기울기를 측정하였다.The coefficient of thermal expansion (CTE) was measured using a Q400 thermomechanical analyzer from TA, and after cutting a polyimide film to 4 mm in width and 20 mm in length, while applying a tension of 0.05 N under a nitrogen atmosphere, 10 °C/min After raising the temperature from room temperature to 300°C at a rate of
(4) 유리전이온도 측정(4) Glass transition temperature measurement
유리전이온도(Tg)는 DMA를 이용하여 각 필름의 손실 탄성률과 저장 탄성률을 구하고, 이들의 탄젠트 그래프에서 변곡점을 유리전이온도로 측정하였다.The glass transition temperature (T g ) was obtained by obtaining the loss modulus and storage modulus of each film using DMA, and the inflection point was measured as the glass transition temperature in their tangent graph.
(5) 필름화 특성(평탄성 평가)(5) Filmization characteristics (flatness evaluation)
필름화 특성은 상기 실시예 및 비교예로부터 제조된 폴리이미드 필름의 주름 발생 유무를 육안으로 관찰하여 평가하였다. 그 결과를 하기 표 2에 나타내었다.Filming properties were evaluated by visually observing the presence or absence of wrinkles in the polyimide films prepared in Examples and Comparative Examples. The results are shown in Table 2 below.
<평가 기준><Evaluation criteria>
○: 주름 발생 없이 필름의 평탄성이 일정함○: film flatness is constant without wrinkling
X: 주름 유입으로 인해 필름의 평탄성이 일정하지 않음X: The flatness of the film is not uniform due to the influx of wrinkles
단위두께 수분 투기성
(g/(m2*day))/㎛) 
unit thickness moisture permeability
(g/(m 2 *day))/㎛)
유전특성
(23℃/50RH%)
dielectric properties
(23℃/50RH%)
열적특성thermal properties 필름화 특성Filmization properties
DfDf CTE(ppm/℃)CTE (ppm/℃) Tg(℃)Tg(℃)
실시예1Example 1 0.0100.010 0.00280.0028 1515 310310 OO
실시예2Example 2 0.0130.013 0.00270.0027 1717 306306 OO
실시예3Example 3 0.0120.012 0.00280.0028 1616 310310 OO
실시예4Example 4 0.0140.014 0.00290.0029 1818 305305 OO
비교예1Comparative Example 1 0.050.05 0.00350.0035 1212 305305 OO
비교예2Comparative Example 2 측정불가not measurable 0.00270.0027 측정불가not measurable 296296 XX
비교예3Comparative Example 3 0.0420.042 0.00390.0039 66 305305 OO
비교예4Comparative Example 4 0.0180.018 0.00450.0045 1212 285285 XX
비교예5Comparative Example 5 0.0720.072 0.00340.0034 88 335335 OO
표 2에서 확인되듯이, 본 발명의 실시예에 따라 제조된 폴리이미드 필름은 유전 손실률이 0.003 이하로 현저히 낮은 유전 손실율을 나타낼 뿐만 아니라, 유리전이온도가 소망하는 수준임을 확인할 수 있다. 또한, 수분 투기성도 우수한 결과를 나타냄을 확인할 수 있었으며, 주름이 발생하지 않아 우수한 평탄성을 가지므로 필름화 구현이 잘 되는 것을 알 수 있었다. 이러한 결과는 본원에서 특정된 성분 및 조성비에 의해 달성되는 것이며, 각 성분들의 함량이 결정적 역할을 한다는 것을 알 수 있다.반면에 비교예 1 내지 5의 폴리이미드 필름은 실시예 대비 유전 손실률이 높거나 유리 전이온도가 낮게 측정되었을 뿐만 아니라, 수분 투기성에 있어서도 실시예 대비 저하된 결과를 나타내었다. 또한, 비교예 2 및 4의 경우, 주름 유입으로 인해 필름의 평탄성이 일정하지 않아 필름화 구현이 되지 않는 것을 알 수 있다. 이로부터 비교예들은 기가 단위의 고주파로 신호 전송이 이루어지는 전자 부품에 사용되기 어려움을 예상할 수 있다.As can be seen in Table 2, it can be confirmed that the polyimide film prepared according to the embodiment of the present invention exhibits a remarkably low dielectric loss factor of 0.003 or less, and the glass transition temperature is at a desired level. In addition, it was confirmed that the moisture permeability also showed excellent results, and it was found that the filmization was well implemented because it had excellent flatness because wrinkles did not occur. These results are achieved by the components and composition ratios specified herein, and it can be seen that the content of each component plays a decisive role. On the other hand, the polyimide films of Comparative Examples 1 to 5 had a high dielectric loss factor or Not only the glass transition temperature was measured to be low, but also the water permeability was lowered compared to the Example. In addition, in the case of Comparative Examples 2 and 4, it can be seen that the filmization is not realized because the flatness of the film is not constant due to the inflow of wrinkles. From this, it can be expected that the comparative examples are difficult to be used in electronic components in which signals are transmitted at high frequencies in the unit of gigabytes.
이상 본 발명의 실시예들을 참조하여 설명하였지만, 본 발명이 속한 분야에서 통상의 지식을 가진 자라면, 상기 내용을 바탕을 본 발명의 범주 내에서 다양한 응용 및 변형을 행하는 것이 가능할 것이다.Although described above with reference to the embodiments of the present invention, those of ordinary skill in the art to which the present invention pertains will be able to make various applications and modifications within the scope of the present invention based on the above content.
본 발명의 구현예에 따른 폴리이미드 필름은 특정 이무수물산 성분과 특정 디아민 성분을 특정한 몰비로 조합하여 사용함으로써 수분의 흡습율과 투기성을 최소화 하여 저유전 특성 및 고내열 특성을 가질 수 있다.The polyimide film according to the embodiment of the present invention can have low dielectric properties and high heat resistance properties by minimizing moisture absorption and air permeability by using a specific dianhydride component and a specific diamine component in a specific molar ratio in combination.
또한, 본 발명은 상기와 같은 폴리이미드 필름을 포함하여 10 GHz 이상의 높은 주파수로 고속 통신을 구현할 수 있어 연성금속박적층판 등의 전자 부품 등에 유용하게 적용될 수 있다.In addition, the present invention can implement high-speed communication at a high frequency of 10 GHz or more, including the polyimide film as described above, and thus can be usefully applied to electronic components such as flexible metal clad laminates.

Claims (14)

  1. 비페닐테트라카르복실릭디안하이드라이드(BPDA) 및 피로멜리틱디안하이드라이드(PMDA)를 포함하는 이무수물산 성분; 및dianhydride components including biphenyltetracarboxylic dianhydride (BPDA) and pyromellitic dianhydride (PMDA); and
    m-톨리딘(m-tolidine) 및 파라페닐렌 디아민(PPD)을 포함하는 디아민 성분을 포함하는 폴리아믹산 용액을 이미드화하여 제조되며,It is prepared by imidizing a polyamic acid solution containing a diamine component including m-tolidine and paraphenylene diamine (PPD),
    상기 디아민 성분의 총 함량 100 몰%를 기준으로, 상기 m-톨리딘의 함량이 30 몰% 이상 50 몰% 이하이고, 상기 파라페닐렌 디아민의 함량이 50 몰% 이상 70 몰% 이하인, 폴리이미드 필름.Based on 100 mol% of the total content of the diamine component, the content of m-tolidine is 30 mol% or more and 50 mol% or less, and the content of paraphenylene diamine is 50 mol% or more and 70 mol% or less, polyimide film.
  2. 제1항에 있어서,According to claim 1,
    상기 이무수물산 성분의 총함량 100 몰%를 기준으로 상기 비페닐테트라카르복실릭디안하이드라이드의 함량이 45 몰% 이상 65몰% 이하이고, 피로멜리틱디안하이드라이드의 함량이 35 몰% 이상 55 몰% 이하인, 폴리이미드 필름.Based on 100 mol% of the total content of the dianhydride component, the content of the biphenyltetracarboxylic dianhydride is 45 mol% or more and 65 mol% or less, and the content of pyromellitic dianhydride is 35 mol% or more and 55 % by mole or less, a polyimide film.
  3. 제1항에 있어서, According to claim 1,
    2이상의 블록으로 이루어진 블록 공중합체를 포함하는, 폴리이미드 필름.A polyimide film comprising a block copolymer consisting of two or more blocks.
  4. 제1항에 있어서,According to claim 1,
    비페닐테트라카르복실릭디안하이드라이드를 포함하는 이무수물산 성분과 m-톨리딘(m-tolidine) 및 파라페닐렌 디아민을 포함하는 디아민 성분을 이미드화 반응시켜 얻어진 제1 블록; 및a first block obtained by imidizing a dianhydride component containing biphenyltetracarboxylic dianhydride and a diamine component containing m-tolidine and paraphenylene diamine; and
    비페닐테트라카르복실릭디안하이드라이드 및 피로멜리틱디안하이드라이드를 포함하는 이무수물산 성분과 m-톨리딘을 포함하는 디아민 성분을 이미드화 반응시켜 얻어진 제2 블록;을 포함하는 블록 공중합체를 포함하는, 폴리이미드 필름.A second block obtained by imidizing a dianhydride component containing biphenyltetracarboxylic dianhydride and pyromellitic dianhydride and a diamine component containing m-tolidine which is a polyimide film.
  5. 제1항에 있어서, According to claim 1,
    유리전이온도(Tg)가 300℃ 이상이고, 유전손실율(Df)이 0.003 이하인, 폴리이미드 필름.A glass transition temperature (Tg) of 300° C. or higher, and a dielectric loss factor (Df) of 0.003 or less, a polyimide film.
  6. 제1항에 있어서, According to claim 1,
    수분 투기성이 0.02(g/(m2*day))/㎛) 이하인, 폴리이미드 필름.A polyimide film having a moisture permeability of 0.02 (g/(m 2 *day))/μm) or less.
  7. 제1항에 있어서, According to claim 1,
    열팽창 계수가 15 내지 18 ppm/℃ 인, 폴리이미드 필름.A polyimide film having a coefficient of thermal expansion of 15 to 18 ppm/°C.
  8. (a) 제1 이무수물산 성분 및 제1 디아민 성분을 유기용매 중에서 중합하여 제1 폴리아믹산을 제조하는 단계;(a) preparing a first polyamic acid by polymerizing the first dianhydride component and the first diamine component in an organic solvent;
    (b) 제2 이무수물산 성분 및 제2 디아민 성분을 유기용매 중에서 중합하여 제2 폴리아믹산을 제조하는 단계;(b) preparing a second polyamic acid by polymerizing the second dianhydride component and the second diamine component in an organic solvent;
    (c) 상기 제1 폴리아믹산 및 제2 폴리아믹산을 유기용매 중에서 공중합하여 제3 폴리아믹산을 제조하는 단계; 및(c) preparing a third polyamic acid by copolymerizing the first polyamic acid and the second polyamic acid in an organic solvent; and
    (d) 상기 제3 폴리아믹산을 포함하는 전구체 조성물을 지지체 상에 제막한 후, 이미드화하는 단계를 포함하고,(d) forming a film of the precursor composition including the third polyamic acid on a support, and then imidizing;
    상기 제1 이무수물산 성분 및 제2 이무수물산 성분은 각각 비페닐테트라카르복실릭디안하이드라이드(BPDA) 및 피로멜리틱디안하이드라이드(PMDA)로 이루어진 그룹에서 선택된 1종 이상을 포함하고,The first dianhydride component and the second dianhydride component each include at least one selected from the group consisting of biphenyltetracarboxylic dianhydride (BPDA) and pyromellitic dianhydride (PMDA),
    상기 제1 디아민 성분 및 제2 디아민 성분은 각각 m-톨리딘(m-tolidine) 및 파라페닐렌 디아민(PPD)로 이루어진 그룹에서 선택된 1종 이상을 포함하며,The first diamine component and the second diamine component each include at least one selected from the group consisting of m-tolidine and paraphenylene diamine (PPD),
    상기 제1 디아민 성분 및 상기 제2 디아민 성분의 총 함량 100 몰%를 기준으로 상기 m-톨리딘의 함량이 30 몰% 이상 50 몰% 이하이고, 상기 파라페닐렌 디아민의 함량이 50 몰% 이상 70 몰% 이하인, 폴리이미드 필름의 제조방법.Based on 100 mol% of the total content of the first diamine component and the second diamine component, the content of m-tolidine is 30 mol% or more and 50 mol% or less, and the content of paraphenylene diamine is 50 mol% or more 70 mol% or less, a method for producing a polyimide film.
  9. 제8항에 있어서, 9. The method of claim 8,
    상기 제1 이무수물산 성분 및 상기 제2 이무수물산 성분의 총함량 100 몰%를 기준으로 상기 비페닐테트라카르복실릭디안하이드라이드의 함량이 45 몰% 이상 65 몰% 이하이고, 피로멜리틱디안하이드라이드(PMDA)의 함량이 35 몰% 이상 55 몰% 이하인, 폴리이미드 필름의 제조방법.Based on 100 mol% of the total content of the first dianhydride component and the second dianhydride component, the content of the biphenyltetracarboxylic dianhydride is 45 mol% or more and 65 mol% or less, and pyromellitic dianhydride A method for producing a polyimide film, wherein the content of the Ride (PMDA) is 35 mol% or more and 55 mol% or less.
  10. 제8항에 있어서,9. The method of claim 8,
    상기 제1 폴리아믹산은 비페닐테트라카르복실릭디안하이드라이드를 포함하는 이무수물산 성분과 m-톨리딘(m-tolidine) 및 파라페닐렌 디아민을 포함하는 디아민 성분을 포함하고,The first polyamic acid includes a dianhydride component including biphenyltetracarboxylic dianhydride and a diamine component including m-tolidine and paraphenylene diamine,
    상기 제2 폴리아믹산은 비페닐테트라카르복실릭디안하이드라이드 및 피로멜리틱디안하이드라이드를 포함하는 이무수물산 성분과 m-톨리딘을 포함하는 디아민 성분을 포함하는, 폴리이미드 필름의 제조방법.The second polyamic acid comprises a dianhydride component including biphenyltetracarboxylic dianhydride and pyromellitic dianhydride and a diamine component including m-tolidine.
  11. 제8항에 있어서,9. The method of claim 8,
    제조된 폴리이미드 필름의 유리전이온도(Tg)가 300℃ 이상이고, 유전손실율(Df)이 0.003 이하인, 폴리이미드 필름의 제조방법.A method for producing a polyimide film, wherein the glass transition temperature (Tg) of the prepared polyimide film is 300° C. or more, and the dielectric loss factor (Df) is 0.003 or less.
  12. 제1항에 따른 폴리이미드 필름 및 열가소성 수지층을 포함하는, 다층 필름.A multilayer film comprising the polyimide film according to claim 1 and a thermoplastic resin layer.
  13. 제1항에 따른 폴리이미드 필름과 전기전도성의 금속박을 포함하는, 연성금속박적층판.A flexible metal clad laminate comprising the polyimide film according to claim 1 and an electrically conductive metal foil.
  14. 제13항에 따른 연성금속박적층판을 포함하는, 전자 부품.An electronic component comprising the flexible metal clad laminate according to claim 13 .
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