Nothing Special   »   [go: up one dir, main page]

WO2021179663A1 - Transducteur, son procédé de fabrication et son application - Google Patents

Transducteur, son procédé de fabrication et son application Download PDF

Info

Publication number
WO2021179663A1
WO2021179663A1 PCT/CN2020/129193 CN2020129193W WO2021179663A1 WO 2021179663 A1 WO2021179663 A1 WO 2021179663A1 CN 2020129193 W CN2020129193 W CN 2020129193W WO 2021179663 A1 WO2021179663 A1 WO 2021179663A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
etching
hollow
cuboid
height
Prior art date
Application number
PCT/CN2020/129193
Other languages
English (en)
Chinese (zh)
Inventor
刘嘉俊
彭本贤
于峰崎
Original Assignee
深圳先进技术研究院
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳先进技术研究院 filed Critical 深圳先进技术研究院
Publication of WO2021179663A1 publication Critical patent/WO2021179663A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0644—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element
    • B06B1/0651—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element of circular shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
    • B81B3/001—Structures having a reduced contact area, e.g. with bumps or with a textured surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00214—Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00531—Dry etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00539—Wet etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B2201/00—Indexing scheme associated with B06B1/0207 for details covered by B06B1/0207 but not provided for in any of its subgroups
    • B06B2201/70—Specific application
    • B06B2201/76—Medical, dental

Definitions

  • the invention belongs to the field of micro-electromechanical technology, and relates to a transducer and a preparation method and application thereof, in particular to a concentric circular-ring capacitive micro-mechanical ultrasonic transducer based on a non-diffraction sound field, and a preparation method and application thereof.
  • Ultrasound is a kind of mechanical wave with higher vibration frequency than sound wave. It has the characteristics of high frequency, short wavelength, small diffraction phenomenon, good directivity, and it can become rays and propagate directionally. Ultrasound can transmit information, and it is easy to obtain more concentrated sound energy. Ultrasound has a strong ability to penetrate liquids and solids, especially in solids that are opaque to sunlight. It can penetrate to a depth of tens of meters. Therefore, ultrasonic testing is widely used in industry, agriculture, national defense, and medicine.
  • the ultrasonic transducer is formed of a piezoelectric ceramic material such as PZT or a piezoelectric polymer such as PVDF.
  • the current transducer can be made by semiconductor technology.
  • Such a transducer is formed of a tiny semiconductor unit in which a vibrating membrane generates and receives ultrasonic energy, and is called a micromachined ultrasonic transducer (MUT).
  • MUT micromachined ultrasonic transducer
  • Two such transducer types are: those that use piezoelectric materials on the membrane, known as piezoelectric micromachined ultrasonic transducers (PMUT); and those that use the capacitive effect between a conductive membrane and another electrode Those are called capacitive micromachined ultrasonic transducers (CMUT).
  • PMUT piezoelectric micromachined ultrasonic transducers
  • CMUT capacitive micromachined ultrasonic transducers
  • CMUT capacitive micromachined ultrasonic transducer
  • CMUT capacitive micromachined ultrasonic sensor
  • CMUT capacitive micromachined ultrasonic sensor
  • a corrosion area must be formed between the upper electrode and the lower electrode, and the corrosion solution is poured into it. After the cavity gap is formed, the corrosion solution is removed.
  • this process method will have the following two problems: 1. In the process of wet etching, the corrosion rate will be caused by the concentration of the etching solution and the corrosion time, which will cause the different corrosion levels and thus reduce the process consistency. 2. In the process of cleaning the corrosive liquid, due to the small cavity gap (2um) and the existence of the liquid surface tension, it is easy to cause the upper and lower electrodes to stick together, which leads to the failure of the device.
  • the purpose of the present invention is to provide a transducer and its preparation method and application, wherein the transducer is a non-diffracted ultrasonic sound field, because the non-diffracted wave can travel infinitely far without divergence in an ideal state, and the non-diffracted wave It is a highly focused ultrasound.
  • time-delay focusing processing is not required, which improves the imaging frame rate; in the preparation process, reactive ion deep etching and wet etching are used together, which is convenient for Self-stop during the preparation process; avoid multiple photolithography, and can ensure the consistency and repeatability in the process operation; by setting the metal layer as a channel, avoid the first component and the second component from sticking to each other.
  • One of the objectives of the present invention is to provide a transducer, the transducer comprising: a first component, a second component, and a third component for connecting the first component and the second component;
  • the first component includes an upper board layer and a first lead layer
  • the second component includes a lower board layer and a second lead layer
  • the third component includes an insulating layer, a conductive layer, a parylene layer, and a hollow layer located inside the insulating layer;
  • the upper electrode plate layer, the first lead layer and the second lead layer are all suspended above the lower electrode plate layer;
  • the upper electrode plate layer and the first lead layer are connected through the conductive layer in the third component;
  • the lower electrode plate layer and the second lead layer are connected by the conductive layer in the third component.
  • the transducer is a non-diffracted ultrasonic sound field, because the non-diffracted wave can travel infinitely far without divergence in an ideal state, and the non-diffracted wave is a highly focused ultrasound, which is applied to ultrasound imaging
  • the system does not need to perform delay focusing processing, which improves the imaging frame rate; the speed of the sound wave in the human body is about 1.5mm/ ⁇ s.
  • the sound wave round-trip time is 267 ⁇ s
  • the sound wave can travel in the human body for a distance of 20cm, and the imaging speed It is 3750 frames per second.
  • the current traditional ultrasound imaging system speed is only 30 frames per second, and the use of non-diffracting wave imaging will effectively increase the imaging speed.
  • the transducer in the present invention is a concentric circular-ring capacitive micromachined ultrasonic transducer based on a non-diffracting sound field, which can greatly reduce the device area and facilitate the arraying of the transducer under the premise of having better ultrasonic intensity and ultrasonic frequency.
  • the upper electrode plate layer includes a first metal layer, a second metal layer ringed on the outer periphery of the first metal layer, and a third metal layer ringed on the outer periphery of the second metal layer.
  • the first metal layer, the second metal layer, and the third metal layer are arranged in concentric circles from the inside to the outside.
  • the first metal layer is a solid cylinder
  • the radius of the bottom surface of the cylinder is 0-100 ⁇ m, (not including 0, such as 1 ⁇ m, 10 ⁇ m, 20 ⁇ m, 30 ⁇ m, 40 ⁇ m, 50 ⁇ m, 60 ⁇ m, 70 ⁇ m, 80 ⁇ m, 90 ⁇ m, 100 ⁇ m, etc.), preferably 5 ⁇ m
  • the side height is 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.52 ⁇ m, 0.55 ⁇ m, 0.57 ⁇ m, 0.6 ⁇ m, etc.) , Preferably 0.55 ⁇ m.
  • the second metal layer is a hollow cylinder
  • the outer radius of the bottom surface of the hollow cylinder is 4-400 ⁇ m, (for example, 4 ⁇ m, 10 ⁇ m, 50 ⁇ m, 100 ⁇ m, 150 ⁇ m, 200 ⁇ m). ⁇ m, 250 ⁇ m, 300 ⁇ m, 350 ⁇ m, 400 ⁇ m, etc.), preferably 15 ⁇ m
  • the inner radius of the bottom surface is 2-200 ⁇ m, (for example, 2 ⁇ m, 10 ⁇ m, 50 ⁇ m, 100 ⁇ m, 150 ⁇ m, 200 ⁇ m, etc.
  • the side height is 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.52 ⁇ m, 0.55 ⁇ m, 0.57 ⁇ m, 0.6 ⁇ m, etc.), preferably 0.55 ⁇ m.
  • the third metal layer is a hollow cylinder, and the outer radius of the bottom surface of the hollow cylinder is 8-700 ⁇ m, (for example, 8 ⁇ m, 50 ⁇ m, 100 ⁇ m, 150 ⁇ m, 200 ⁇ m, 250 ⁇ m).
  • the inner radius of the bottom surface is 6-500 ⁇ m, (for example, 6 ⁇ m, 50 ⁇ m, 100 ⁇ m, 150 ⁇ m, 200 ⁇ m, 250 ⁇ m, 300 ⁇ m, 350 ⁇ m, 400 ⁇ m, 450 ⁇ m, 500 ⁇ m, etc.), preferably 17 ⁇ m
  • the side height is 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.52 ⁇ m, 0.55 ⁇ m, 0.57 ⁇ m, 0.6 ⁇ m, etc.), preferably 0.55 ⁇ m.
  • the first lead layer is arranged on the outer periphery of the third metal layer, and is arranged at an interval from the third metal layer.
  • the shape of the first lead layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 15-25 ⁇ m, (for example, 15 ⁇ m, 16 ⁇ m, 17 ⁇ m, 18 ⁇ m, 19 ⁇ m, 20 ⁇ m, 21 ⁇ m, 22 ⁇ m, 23 ⁇ m, 24 ⁇ m, 25 ⁇ m, etc.), preferably 20 ⁇ m, with a width of 0.3-0.7 ⁇ m, (for example, 0.3 ⁇ m, 0.35 ⁇ m, 0.4 ⁇ m, 0.45 ⁇ m, 0.5 ⁇ m, 0.55 ⁇ m, 0.6 ⁇ m, 0.65 ⁇ m, 0.7 ⁇ m, etc.), preferably 0.5 ⁇ m, with a height of 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.51 ⁇ m, 0.52 ⁇ m, 0.53 ⁇ m, 0.54 ⁇ m , 0.55 ⁇ m, 0.56 ⁇ m, 0.57 ⁇ m,
  • the material of the upper electrode plate layer and the first lead layer are both aluminum.
  • the lower electrode plate layer includes a metal layer and a lower insulating layer located on the bottom surface of the metal layer.
  • the material of the metal layer is aluminum.
  • the material of the insulating layer is silicon dioxide.
  • the shape of the metal layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 250-350 ⁇ m, (for example, 250 ⁇ m, 260 ⁇ m ⁇ m, 270 ⁇ m, 280 ⁇ m, 290 ⁇ m, 300 ⁇ m, 310 ⁇ m, 320 ⁇ m, 330 ⁇ m, 340 ⁇ m, 350 ⁇ m, etc.), preferably 300 ⁇ m, with a width of 250-350 ⁇ m, (for example, 250 ⁇ m, 260 ⁇ m , 270 ⁇ m, 280 ⁇ m, 290 ⁇ m, 300 ⁇ m, 310 ⁇ m, 320 ⁇ m, 330 ⁇ m, 340 ⁇ m, 350 ⁇ m, etc.), preferably 300 ⁇ m, with a height of 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.52 ⁇ m, 0.55 ⁇ m, 0.57 ⁇ m, 0.6 ⁇ m,
  • the shape of the lower insulating layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 250-350 ⁇ m, (for example, 250 ⁇ m, 260 ⁇ m ⁇ m, 270 ⁇ m, 280 ⁇ m, 290 ⁇ m, 300 ⁇ m, 310 ⁇ m, 320 ⁇ m, 330 ⁇ m, 340 ⁇ m, 350 ⁇ m, etc.), preferably 300 ⁇ m, with a width of 250-350 ⁇ m, (for example, 250 ⁇ m, 260 ⁇ m , 270 ⁇ m, 280 ⁇ m, 290 ⁇ m, 300 ⁇ m, 310 ⁇ m, 320 ⁇ m, 330 ⁇ m, 340 ⁇ m, 350 ⁇ m, etc.), preferably 300 ⁇ m, with a height of 1.5-1.8 ⁇ m, (for example, 1.5 ⁇ m, 1.55 ⁇ m, 1.6 ⁇ m, 1.65 ⁇ m, 1.7 ⁇ m
  • the shape of the second lead layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 15-25 ⁇ m, (for example, 15 ⁇ m, 16 ⁇ m, 17 ⁇ m, 18 ⁇ m, 19 ⁇ m, 20 ⁇ m, 21 ⁇ m, 22 ⁇ m, 23 ⁇ m, 24 ⁇ m, 25 ⁇ m, etc.), preferably 20 ⁇ m, with a width of 0.3-0.7 ⁇ m, (for example, 0.3 ⁇ m, 0.35 ⁇ m, 0.4 ⁇ m, 0.45 ⁇ m, 0.5 ⁇ m, 0.55 ⁇ m, 0.6 ⁇ m, 0.65 ⁇ m, 0.7 ⁇ m, etc.), preferably 0.5 ⁇ m, with a height of 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.51 ⁇ m, 0.52 ⁇ m, 0.53 ⁇ m, 0.54 ⁇ m , 0.55 ⁇ m, 0.56 ⁇ m, 0.57 ⁇ m,
  • the material of the second lead layer is aluminum.
  • the material of the insulating layer is silicon dioxide.
  • the conductive layer includes an aluminum layer and a tungsten layer arranged perpendicular to the aluminum layer.
  • the tungsten layer includes a first tungsten layer, a second tungsten layer, and a third tungsten layer arranged at intervals from parallel.
  • the electrical signal of the upper electrode plate layer is sequentially conducted to the first lead layer through the first tungsten layer, the aluminum layer, and the second tungsten layer.
  • the electrical signal of the lower electrode plate layer is conducted to the second lead layer through the third tungsten layer.
  • the shape of the aluminum layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 2-100 ⁇ m, (for example, 2 ⁇ m, 10 ⁇ m, 20 ⁇ m, 30 ⁇ m, 40 ⁇ m, 50 ⁇ m, 60 ⁇ m, 70 ⁇ m , 80 ⁇ m, 90 ⁇ m, 100 ⁇ m, etc.), preferably 8 ⁇ m, with a width of 0.3-0.7 ⁇ m, (for example, 0.3 ⁇ m, 0.35 ⁇ m, 0.4 ⁇ m, 0.45 ⁇ m, 0.5 ⁇ m, 0.55 ⁇ m, 0.6 ⁇ m, 0.65 ⁇ m, 0.7 ⁇ m, etc.), preferably 0.5 ⁇ m, and the height is 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.52 ⁇ m, 0.55 ⁇ m, 0.57 ⁇ m, 0.6 ⁇ m, etc.), preferably 0.55 ⁇ m.
  • the shape of the first tungsten layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 0.1-20 ⁇ m, (for example, 0.1 ⁇ m, 3 ⁇ m, 5 ⁇ m, 8 ⁇ m, 10 ⁇ m, 12 ⁇ m, 15 ⁇ m, 18 ⁇ m, 20 ⁇ m, etc.), Preferably 5 ⁇ m, width 0.3-0.7 ⁇ m, (for example, 0.3 ⁇ m, 0.35 ⁇ m, 0.4 ⁇ m, 0.45 ⁇ m, 0.5 ⁇ m, 0.55 ⁇ m, 0.6 ⁇ m, 0.65 ⁇ m, 0.7 ⁇ m, etc.), preferably 0.5 ⁇ m, height 0.5- 0.6 ⁇ m, preferably 0.55 ⁇ m.
  • the shape of the second tungsten layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 0.1-20 ⁇ m, (for example, 0.1 ⁇ m, 3 ⁇ m, 5 ⁇ m, 8 ⁇ m, 10 ⁇ m, 12 ⁇ m, 15 ⁇ m, 18 ⁇ m, 20 ⁇ m, etc.), preferably 5 ⁇ m, with a width of 0.3-0.7 ⁇ m, (for example, 0.3 ⁇ m, 0.35 ⁇ m, 0.4 ⁇ m, 0.45 ⁇ m, 0.5 ⁇ m, 0.55 ⁇ m, 0.6 ⁇ m, 0.65 ⁇ m, 0.7 ⁇ m, etc.), preferably 0.5 ⁇ m, with a height of 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.52 ⁇ m, 0.55 ⁇ m, 0.57 ⁇ m, 0.6 ⁇ m, etc.), preferably 0.55 ⁇ m .
  • the shape of the third tungsten layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 0.1-20 ⁇ m, (for example, 0.1 ⁇ m, 3 ⁇ m, 5 ⁇ m, 8 ⁇ m, 10 ⁇ m, 12 ⁇ m, 15 ⁇ m, 18 ⁇ m, 20 ⁇ m, etc.), preferably 5 ⁇ m, with a width of 0.3-0.7 ⁇ m, (for example, 0.3 ⁇ m, 0.35 ⁇ m, 0.4 ⁇ m, 0.45 ⁇ m, 0.5 ⁇ m, 0.55 ⁇ m, 0.6 ⁇ m, 0.65 ⁇ m, 0.7 ⁇ m, etc.), preferably 0.5 ⁇ m, with a height of 2.5-3 ⁇ m, (for example, 2.5 ⁇ m, 2.55 ⁇ m, 2.6 ⁇ m, 2.65 ⁇ m, 2.7 ⁇ m, 2.75 ⁇ m, 2.8 ⁇ m , 2.85 ⁇ m, 2.9 ⁇ m, 2.95
  • the parylene layer and the hollow layer are both arranged in parallel below the conductive layer, and the vertical distance between the parylene layer and the conductive layer is 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.52 ⁇ m). ⁇ m, 0.55 ⁇ m, 0.57 ⁇ m, 0.6 ⁇ m, etc.), preferably 0.55 ⁇ m.
  • the hollow layer includes a first hollow layer, a second hollow layer ringed on the outer periphery of the first hollow layer, and a third hollow layer disposed on the outer periphery of the second hollow layer.
  • the shape of the first hollow layer is a cylinder
  • the radius of the bottom surface of the cylinder is 0-100 ⁇ m, (not including 0, such as 1 ⁇ m, 5 ⁇ m, 10 ⁇ m, 20 ⁇ m, 30 ⁇ m , 40 ⁇ m, 50 ⁇ m, 60 ⁇ m, 70 ⁇ m, 80 ⁇ m, 90 ⁇ m, 100 ⁇ m, etc.), preferably 3 ⁇ m
  • the side height is 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.52 ⁇ m, 0.55 ⁇ m, 0.57 ⁇ m, 0.6 ⁇ m etc.), preferably 0.55 ⁇ m.
  • the shape of the second hollow layer is a hollow cylinder
  • the inner radius of the bottom surface of the hollow cylinder is 2.5-205 ⁇ m, (for example, 2.5 ⁇ m, 5 ⁇ m, 10 ⁇ m, 30 ⁇ m, 50 ⁇ m, 70 ⁇ m, 100 ⁇ m, 120 ⁇ m, 150 ⁇ m, 170 ⁇ m, 200 ⁇ m, 205 ⁇ m, etc.), preferably 9 ⁇ m
  • the outer radius of the bottom surface is 3.5-395 ⁇ m, (for example 3.5 ⁇ m, 10 ⁇ m, 50 ⁇ m, 100 ⁇ m, 150 ⁇ m, 200 ⁇ m, 250 ⁇ m, 300 ⁇ m, 350 ⁇ m, 395 ⁇ m, etc.)
  • the side height is 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.52 ⁇ m, 0.55 ⁇ m , 0.57 ⁇ m, 0.6 ⁇ m, etc.), preferably 0.55 ⁇ m.
  • the shape of the third hollow layer is a hollow cylinder
  • the inner radius of the bottom surface of the hollow cylinder is 6.5-505 ⁇ m, (for example, 6.5 ⁇ m, 30 ⁇ m, 50 ⁇ m, 100 ⁇ m, 150 ⁇ m, 200 ⁇ m, 250 ⁇ m, 300 ⁇ m, 350 ⁇ m, 400 ⁇ m, 450 ⁇ m, 505 ⁇ m, etc.), preferably 19 ⁇ m
  • the outer radius of the bottom surface is 7.5-695 ⁇ m, (for example 7.5 ⁇ m, 30 ⁇ m, 50 ⁇ m, 100 ⁇ m, 150 ⁇ m, 200 ⁇ m, 250 ⁇ m, 300 ⁇ m, 350 ⁇ m, 400 ⁇ m, 450 ⁇ m, 500 ⁇ m, 550 ⁇ m, 600 ⁇ m, 650 ⁇ m, 695 ⁇ m, etc.), It is preferably 23 ⁇ m, and the side height is 0.5-0.6 ⁇ m, (for example, 0.5 ⁇
  • the parylene layer is arranged on the outer periphery of the third hollow layer.
  • parylene the role of parylene is to block the corroded holes, usually 1 g parylene evaporates 5.5 h, the thickness of the horizontal surface obtained is 1 ⁇ m, and the content of parylene is adjusted as needed.
  • the second object of the present invention is to provide a method for preparing the transducer as described in the first object.
  • the preparation method includes: passing the bare chip through primary etching, coating and secondary etching in sequence to obtain the transducer. Energy device.
  • the die is first designed by Cadence virtuoso and then produced.
  • the appearance structure of the bare chip is a rectangular parallelepiped, which is perpendicular to the upper and lower bottom surfaces of the rectangular parallelepiped.
  • the bare chip is cut along the center of the upper and lower bottom surfaces, and the section is parallel to one side of the rectangular parallelepiped;
  • Figure 1 is a cross-sectional view of the bare chip structure, as shown in the figure.
  • the structure of the die includes a non-metal oxide layer and an aluminum layer A2 distributed inside the non-metal oxide layer A1 (in order to make the figure more concise and clear, only one aluminum layer is identified, and A2 is not just referring to the figure
  • the marked aluminum layer M1 refers to the aluminum layers M1-M5 in Figure 1 as a whole and the tungsten layer A3 (in order to make the figure more concise and clear, only one tungsten layer is identified, and A3 is not just a mark in the figure
  • the tungsten layer W1 refers to the metal layers W1-W4 in Figure 1) and the silicon nitride layer A4 on the upper surface of the non-metal oxide layer A1; the non-metal oxide layer is a silicon dioxide layer; the aluminum layer
  • the number of layers is 5, from bottom to top including M1 layer, M2 layer, M3 layer, M4 layer and M5 layer; the aluminum layer can be continuously distributed or spaced apart.
  • M1 includes only one aluminum layer
  • M2 includes 6 aluminum layers spaced from left to right (that is, M21 layer, M22 layer, M23 layer, M24 layer, M25 layer, M26 layer )
  • M3 includes only one aluminum layer
  • M4 includes 7 aluminum layers spaced from left to right (that is, M41, M42, M43, M44, M45, M46, M47)
  • M5 only Including an aluminum layer
  • the number of tungsten layers is 4 layers, from left to right including W1 layer, W2 layer, W3 layer and W4 layer
  • W1 layer is used to connect M5 layer and M21 layer vertically
  • W2 layer is used for vertical connection
  • the W3 layer is used to vertically connect the M3 layer and the M46 layer
  • the W4 layer is used to vertically connect the M1 layer and the M47 layer.
  • the direction from left to right in FIG. 1 is recorded as the length
  • the direction from top to bottom is recorded as the height
  • the direction from the inside to the outside is recorded as the width.
  • the first etching includes the first deep reactive ion etching and wet etching of the die in sequence.
  • the first deep reactive ion etching is dry etching.
  • the first deep reactive ion etching is dry etching.
  • the first reactive ion deep etching in the present invention belongs to dry etching, which has good vertical etching ability for non-metal compounds, but has no corrosive effect on metals. It only reacts with non-metals and does not react with metals. Characteristic, the etching process will stop automatically due to the existence of the aluminum layer from top to bottom.
  • the etching parameters of the first deep reactive ion etching include: the etching gas is a mixed gas of CHF 3 and oxygen, and the power of the RIE source is 50-80 W, such as 50W, 55W, 60W, 65W , 70W, 75W, 80W, etc., the uniformity of etching is 90-95%, such as 90%, 91%, 92%, 93%, 94%, 95%, etc.
  • the volume ratio of CHF 3 and oxygen in the mixed gas of CHF 3 and oxygen is (3-6):1, for example, 3:1, 3.5:1, 4:1, 4.5:1, 5: 1, 5.5:1, 6:1, etc.
  • the first deep reactive ion etching includes etching and removing the silicon nitride layer and the silicon dioxide layer on the upper surface of the M5 layer in the bare chip, as well as those arranged perpendicular to the M5 layer and not protected by the M5 layer. Silica layer to obtain preform A.
  • FIG. 2 is a cross-sectional view of the preform A obtained after the first deep reactive ion etching.
  • the upper surface of the M5 layer in the original FIG. The silicon nitride layer and the silicon dioxide layer, and the silicon dioxide layer with vertical M5 setting and no M5 layer protection is removed from top to bottom to obtain the structure of preform A.
  • the reaction Ions only react with the silicon dioxide layer, not the metal layer. During the top-down corrosion process, when it corrodes to the M5 metal layer, the corrosion will automatically stop.
  • the wet etching includes acid etching.
  • the preparation method of the acid solution for acid etching includes: mixing phosphoric acid, nitric acid, glacial acetic acid, and deionized water in a volume ratio of 1:1:2:16.
  • the wet etching includes etching and removing the W1 layer and the M2 layer in the preform A to obtain the preform B.
  • FIG. 3 is a cross-sectional view of the preform B obtained after wet etching.
  • the acid used in the wet etching will react with the metal instead of If it reacts with the silicon dioxide layer, the W1 layer will be etched and removed first in the wet process. The W1 layer and the M21 layer are connected. After the W1 layer is removed by the acid solution, the acid solution will continue to corrode the M21 layer.
  • the M21 layer, The M22 layer, M23 layer, M24 layer, M25 layer, and M26 layer are provided with micro channels. The acid will follow the micro channels to the M21 layer, M22 layer, M23 layer, M24 layer, M25 layer and M26 layer.
  • the coating includes depositing a parylene layer on the upper surface of the silicon dioxide layer in the preform B, the W1 layer removed by etching, and the part of the M2 layer removed by etching to obtain the preform C.
  • the method of deposition is chemical vapor deposition.
  • FIG. 4 is a cross-sectional view of the structure of the preform C obtained by chemical vapor deposition.
  • the preform B the upper surface of the silicon dioxide layer, the W1 layer removed by etching, and the etching Part of the removed M2 layer is deposited with Parylene layer, the purpose is to block the corroded pores, so that the cavity can be in a vacuum state, and secondly, to prevent subsequent work in water, water infiltration into the device, resulting in the actual effect of the device;
  • Ruilin film is prepared by a unique vacuum vapor deposition process.
  • a fully conformal polymer film coating is "grown" on the surface of the substrate by active small molecules, which can be coated on various shapes of surfaces, including sharp edges, The cracks and the inner surface have advantages that other coatings cannot match.
  • the chemical vapor deposition method includes:
  • the second etching is the second deep reactive ion etching.
  • the second deep reactive ion etching is dry etching.
  • the etching parameters of the second deep reactive ion etching include: the etching gas is a mixed gas of CHF 3 and oxygen, and the power of the RIE source is 50-80 W, such as 50W, 55W, 60W, 65W , 70W, 75W, 80W, etc., the uniformity of etching is 90-95%, such as 90%, 91%, 92%, 93%, 94%, 95%, etc.
  • the volume ratio of CHF 3 and oxygen in the mixed gas of CHF 3 and oxygen is (3-6):1, for example, 3:1, 3.5:1, 4:1, 4.5:1, 5: 1, 5.5:1, 6:1, etc.
  • the second reactive ion deep etching includes removing the paricillin layer and the silicon dioxide layer on the upper surface of the M4 layer in the preform C, and is arranged perpendicular to the M4 layer, and there is no M4 layer and M3 layer The protected paricillin layer and silicon dioxide layer, to obtain the transducer.
  • FIG. 5 is a cross-sectional view of the transducer structure obtained by the second deep etching of reactive ion, as shown in FIG.
  • the cillin layer and silicon dioxide layer, and the parecillin layer and silicon dioxide layer which are arranged perpendicular to the M4 layer and are not protected by the M4 layer and the M3 layer.
  • reactive ion deep etching and wet etching are used in conjunction to facilitate self-stop during the preparation process, avoid the use of complex etching methods such as photolithography, and ensure the repeatability in the process operation;
  • micro-holes are provided in the M2 to reduce the width of the hollow, thereby reducing the hollow area, and avoiding the upper film from sticking to the lower film, thereby forming a cavity that can be vibrated.
  • the third object of the present invention is to provide an application of the transducer as described in the first object in ultrasound imaging.
  • the present invention has the following beneficial effects:
  • the transducer of the present invention can greatly reduce the device area and facilitate the arraying of the transducer; in the preparation process, reactive ion deep etching and wet etching are used together, It is convenient to stop automatically during the preparation process, avoids the use of complex etching methods such as photolithography, and can ensure the repeatability of the process operation; in addition, the micro-channels are set in the M2 to reduce the width of the hollow, thereby reducing The hollow area is small, and the upper film is prevented from sticking to the lower film, thereby forming a vibrating cavity.
  • Figure 1 is a cross-sectional view of the bare chip structure in the summary of the invention.
  • A1 is a non-metal oxide layer
  • A2 is an aluminum layer
  • A3 is a tungsten layer
  • A4 is a silicon nitride layer
  • M1-M5 are all aluminum layers
  • W1-W4 are all tungsten layers
  • Figure 2 is a cross-sectional view of the structure of the preform A in the summary of the invention.
  • Figure 3 is a cross-sectional view of the preform B structure in the summary of the invention.
  • Figure 5 is a cross-sectional view of the transducer structure in the summary of the invention.
  • Figure 6 is a top view of the transducer in the embodiment
  • Figure 7 is a cross-sectional view along AA' of Figure 6;
  • 11 is the upper electrode plate layer
  • 12 is the first lead layer
  • 21 is the lower electrode plate layer
  • 211 is the metal layer
  • 212 is the lower insulating layer
  • 22 is the second lead layer
  • 31 is the insulating layer
  • 32 is the Perry In the forest layer
  • 33 is a hollow layer
  • 341 is an aluminum layer
  • 342 is a first tungsten layer
  • 343 is a second tungsten layer
  • 344 is a third tungsten layer.
  • FIG. 6 is a top view of the transducer
  • FIG. 7 is a cross-sectional view of FIG. 6 along AA'. It can be seen from the combination of FIG. 6 and FIG. Assembly and a third assembly filled between the first assembly and the second assembly.
  • the first assembly includes an upper plate layer 11 and a first lead layer 12, and the second assembly includes a lower plate layer 21 and a second lead layer 22.
  • the three components include an insulating layer 31, a parylene layer 32, a hollow layer 33, and a conductive layer located inside the insulating layer; the conductive layer includes an aluminum layer 341, and a first tungsten layer 342 and a second tungsten layer arranged perpendicular to the aluminum layer 341 343.
  • the third tungsten layer 344; the upper electrode plate layer 11, the first lead layer 12 and the second lead layer 22 are all suspended above the lower plate layer 21; the upper electrode plate layer 11 and the first lead layer 12 pass through the first The tungsten layer 342, the aluminum layer 341, and the second aluminum layer 343 are connected; the lower plate layer 21 and the second lead layer 22 are connected through the third tungsten layer 344; wherein the upper plate layer 11 includes a first metal layer, which is arranged around the first metal layer.
  • the lower plate layer 21 includes a metal layer 211 and a lower insulating layer 212 located on the lower surface of the metal layer 211;
  • a parylene layer 32 and the hollow layer 33 are both arranged in parallel below the aluminum layer 341;
  • the hollow layer 33 includes a first hollow layer, a second hollow layer ringed on the outer periphery of the first hollow layer, and a second hollow layer ringed on the outer periphery of the second hollow layer.
  • Three hollow layers; Parylene layer 32 is arranged on the outer periphery of the third hollow layer.
  • the material of the upper electrode plate layer and the first lead layer is aluminum
  • the shape of the first metal layer is a solid cylinder
  • the radius of the bottom surface is 5 ⁇ m
  • the height of the side surface is 0.55 ⁇ m
  • the shape of the second metal layer is hollow Cylinder with a bottom outer radius of 15 ⁇ m, a bottom inner radius of 7 ⁇ m, and a side height of 0.55 ⁇ m
  • the shape of the third metal layer is a hollow cylinder with a bottom outer radius of 25 ⁇ m and a bottom inner radius of 17 ⁇ m, the side height is 0.55 ⁇ m
  • the shape of the first lead layer is a cuboid, the length of the cuboid is 20 ⁇ m, the width is 0.5 ⁇ m, and the height is 0.55 ⁇ m
  • the material of the lower board metal layer is aluminum, the shape is a cuboid, and the length is 300 ⁇ m, the width is 300 ⁇ m, the height is 0.55 ⁇ m; the
  • the length of the rectangular parallelepiped is 20 ⁇ m, the width is 0.5 ⁇ m, and the height is 0.55 ⁇ m; the material of the insulating layer is silicon dioxide, and the insulating layer is filled on the upper plate layer, the first lead layer, and the second lead
  • the shape of the aluminum layer in the insulating layer is a cuboid, the length of the cuboid is 8 ⁇ m, the width is 0.5 ⁇ m, and the height is 0.55 ⁇ m; the shape of the first tungsten layer is a cuboid, and the length of the cuboid is 5.
  • the width is 0.5 ⁇ m
  • the height is 0.55 ⁇ m
  • the shape of the second tungsten layer is a cuboid, the length of the cuboid is 5 ⁇ m, the width is 0.5 ⁇ m, and the height is 0.55 ⁇ m
  • the shape of the third tungsten layer is a cuboid, the length of the cuboid
  • the shape of the first hollow layer is a cylinder with a bottom radius of 3 ⁇ m and a side height of 0.55 ⁇ m
  • the shape of the second hollow layer is a hollow cylinder with an outer bottom surface
  • the radius is 13 ⁇ m
  • the inner radius is 9 ⁇ m
  • the side height is 0.55 ⁇ m
  • the shape of the third hollow layer is a hollow cylinder with a bottom outer radius of 23 ⁇ m, an inner radius of 19 ⁇ m
  • This embodiment also provides a method for manufacturing a transducer, which includes the following steps:
  • the first step design drawings through Cadence virtuoso, and then ask the foundry to produce, and tape out the die;
  • the appearance structure of the bare chip is a rectangular parallelepiped, which is perpendicular to the upper and lower bottom surfaces of the rectangular parallelepiped.
  • the bare chip is cut along the center of the upper and lower bottom surfaces, and the cross section is parallel to one side of the rectangular parallelepiped;
  • Figure 1 is a cross-sectional view of the bare chip structure, such as Figure 1 shows that the structure of the die includes a non-metal oxide layer and an aluminum layer A2 distributed inside the non-metal oxide layer A1 (In order to make the figure more concise and clear, only one aluminum layer is identified, and A2 is not just a reference to the figure.
  • the aluminum layer M1 marked in refers to the aluminum layer M1-M5 in Figure 1 and the tungsten layer A3 (in order to make the figure more concise and clear, only one tungsten layer is identified, and A3 is not just a reference to the mark in the figure.
  • the resulting tungsten layer W1 refers to the entire tungsten layer W1-W4 in Figure 1) and the silicon nitride layer A4 located on the upper surface of the non-metal oxide layer A1; the non-metal oxide layer is a silicon dioxide layer; aluminum
  • the number of layers is 5, from bottom to top including M1 layer, M2 layer, M3 layer, M4 layer and M5 layer.
  • the aluminum layer can be distributed continuously or spaced apart. If spaced apart, it will be located on the same horizontal plane.
  • M1 includes only one aluminum layer
  • M2 includes six aluminum layers spaced from left to right (that is, M21 layer, M22 layer, M23 layer, M24 layer, M25 layer, M26 Layer)
  • M3 includes only one aluminum layer
  • M4 includes 7 aluminum layers spaced from left to right (which can be M41 layer, M42 layer, M43 layer, M44 layer, M45 layer, M46 layer, M47 layer)
  • M5 Only one aluminum layer is included; the number of tungsten layers is 4, including W1, W2, W3, and W4 layers from left to right; W1 layer is used to connect M5 and M21 layers vertically, and W2 layer is used for vertical
  • W1 layer and the M45 layer are connected, the W3 layer is used to vertically connect the M3 layer and the M46 layer, and the W4 layer is used to vertically connect the M1 layer and the M47 layer.
  • the second step the silicon nitride layer and the silicon dioxide layer on the upper surface of the M5 layer of the bare chip obtained in the first step are removed by etching, and the silicon dioxide layer that is arranged perpendicular to the M5 layer and is not protected by the M5 layer, Get preform A;
  • the etching parameters of the first deep reactive ion etching include: the etching gas is a mixture of CHF 3 and oxygen with a volume ratio of 4:1, the power of the RIE source is 60 W, and the etching is uniform Sex is 93%.
  • Figure 2 in the content of the invention is a cross-sectional view of the preform A.
  • the upper surface of the M5 layer in the original figure 1 is removed by the first deep reactive ion etching.
  • the silicon nitride layer and silicon dioxide layer are removed from top to bottom, and the silicon dioxide layer with vertical M5 setting and no M5 layer protection is removed to obtain the structure of preform A.
  • the reactive ions only react with the silicon dioxide layer, not the metal layer. During the top-down corrosion process, when it corrodes to the M5 metal layer, the corrosion will automatically stop.
  • the third step wet etching the preform A obtained in the second step to obtain the preform B;
  • the preparation method of the acid for wet etching includes: mixing phosphoric acid, nitric acid, glacial acetic acid, and deionized water in a volume ratio of 1:1:2:16 to obtain an acid solution that satisfies the reaction with aluminum.
  • the metal layer can be removed better.
  • preform A is wet-etched to obtain preform B.
  • FIG. 3 is a cross-sectional view of preform B.
  • wet etching The acid used in the etching will react with the metal instead of the silicon dioxide layer.
  • the W1 layer will be etched and removed.
  • the W1 layer and the M21 layer are connected.
  • the acid solution will continue to corrode the M21 layer.
  • the M21 layer, the M22 layer, the M23 layer, the M24 layer, the M25 layer and the M26 layer are provided with microchannels.
  • the acid solution will follow the microchannels to the M21 layer, M22 layer, The M23, M24, M25, and M26 layers are etched to obtain preform B; and it can be seen from Figure 3 that in the M2 layer, due to the effect of the micro-channels, the width of the hollow is reduced, thereby reducing The hollow area is reduced, and the upper film is prevented from sticking to the lower film, thereby forming a vibrating cavity.
  • Step 4 In the preform B obtained in the third step, the upper surface of the silicon dioxide layer, the W1 layer removed by etching, and the part of the M2 layer removed by etching are all deposited by chemical vapor deposition to deposit the parylene layer to obtain the preform Product C;
  • the chemical vapor deposition method includes the following steps:
  • FIG. 4 is a cross-sectional view of the structure of the preform C.
  • the purpose of depositing the parylene layer is to block the corroded pores, so that the cavity can be in a vacuum state, and secondly, to prevent water from penetrating into the device during subsequent work in water, resulting in the actual effect of the device; the parylene film uses a unique Prepared by vacuum vapor deposition process, a fully conformal polymer film coating is "grown" on the surface of the substrate from active small molecules, which can be coated on various shapes of surfaces, including sharp edges, cracks and inner surfaces. Unmatched advantages of other coatings.
  • the fifth step the preform C obtained in the fourth step is subjected to the second reactive ion deep etching to obtain the transducer.
  • the etching parameters of the second reactive ion deep etching include: the etching gas is a mixture of CHF 3 and oxygen with a volume ratio of 4:1, the power of the RIE source is 60 W, and the etching uniformity It is 93%, and the value of the specific parameter is not specifically limited in this embodiment, and those skilled in the art can adjust it according to actual needs.
  • FIG. 5 is a cross-sectional view of the transducer structure.
  • the second reactive ion deep etching is used to remove the paricillin layer and the silicon dioxide layer on the upper surface of the M4 layer in the preform C, and the vertical It is set on the M4 layer and is not protected by the M4 layer and the M3 layer of Parecillin and silicon dioxide layer.
  • the performance test of the transducer obtained in Example 1 was carried out.
  • the test standard was as follows: a standard ultrasonic probe was used as the receiving end to test the transmitting performance of the developed transducer; an impedance analyzer was used to add an AC signal of 1V, a DC signal of 40V, and scanning Range [20KHz-1MHz], the measured ultrasonic intensity is 6.5 W/cm 2 , the ultrasonic frequency is 2000 KHz, and the array test meets the standard.
  • the material of the upper electrode plate layer and the first lead layer is aluminum
  • the shape of the first metal layer is a solid cylinder
  • the radius of the bottom surface is 1 ⁇ m
  • the height of the side surface is 0.5 ⁇ m
  • the shape of the second metal layer is a hollow cylinder
  • the outer radius of the bottom surface is 4 ⁇ m
  • the inner radius of the bottom surface is 2 ⁇ m
  • the height of the side surface is 0.6 ⁇ m
  • the shape of the third metal layer is a hollow cylinder
  • the outer radius of the bottom surface is 8 ⁇ m
  • the inner radius of the bottom surface is 6 ⁇ m
  • the height of the side surface is 0.6 ⁇ m
  • the shape of the first lead layer is a cuboid, the length of the cuboid is 15 ⁇ m, the width is 0.3 ⁇ m, and the height is 0.5 ⁇ m
  • the material of the lower board metal layer is aluminum
  • the shape is a cuboid
  • the length is 250 ⁇
  • This embodiment also provides a method for preparing a transducer.
  • the difference between the preparation method and embodiment 1 is only that the etching parameters of the first deep reactive ion etching and the second deep reactive ion etching include: the etching gas is volume A mixture of CHF 3 and oxygen gas with a ratio of 3:1, the power of the RIE source is 50 W, and the etching uniformity is 90%.
  • Example 2 The performance test of the transducer obtained in Example 2 is performed.
  • the test standard is the same as that of Example 1.
  • the measured ultrasonic intensity is 7 W/cm 2
  • the ultrasonic frequency is 2000 KHz
  • the array test meets the standard.
  • the material of the upper electrode plate layer and the first lead layer is aluminum
  • the shape of the first metal layer is a solid cylinder, the radius of the bottom surface is 100 ⁇ m, and the height of the side surface is 0.6 ⁇ m
  • the shape of the second metal layer is hollow Cylinder, the outer radius of the bottom surface is 400 ⁇ m, the inner radius of the bottom surface is 200 ⁇ m, and the side height is 0.6 ⁇ m
  • the shape of the third metal layer is a hollow cylinder, the outer radius of the bottom surface is 700 ⁇ m, and the inner radius of the bottom surface is 500 ⁇ m, the side height is 0.6 ⁇ m
  • the shape of the first lead layer is a cuboid, the length of the cuboid is 25 ⁇ m, the width is 0.7 ⁇ m, and the height is 0.6 ⁇ m
  • the material of the lower board metal layer is aluminum, the shape is a cuboid, and the length is 350 ⁇ m, the width is 350 ⁇ m, and the height
  • the length of the rectangular parallelepiped is 25 ⁇ m, the width is 0.7 ⁇ m, and the height is 0.6 ⁇ m;
  • the material of the insulating layer is silicon dioxide, and the insulating layer is filled in the upper plate layer, the first lead layer, and the second lead Between the layer and the lower plate layer;
  • the shape of the aluminum layer in the insulating layer is a cuboid, the length of the cuboid is 100 ⁇ m, the width is 0.7 ⁇ m, and the height is 0.6 ⁇ m;
  • the shape of the first tungsten layer is a cuboid, and the length of the cuboid is 20 ⁇ m ,
  • the width is 0.7 ⁇ m and the height is 0.6 ⁇ m;
  • the shape of the second tungsten layer is a cuboid, the length of the cuboid is 20 ⁇ m, the width is 0.7 ⁇ m, and the height is 0.6 ⁇ m;
  • This embodiment also provides a method for preparing a transducer.
  • the difference between the preparation method and Example 1 is only that the etching parameters of the first deep reactive ion etching and the second deep reactive ion etching include: the etching gas is volume A mixed gas of CHF 3 and oxygen with a ratio of 6:1, the power of the RIE source is 80 W, and the etching uniformity is 95%.
  • Example 3 The performance test of the transducer obtained in Example 3 is performed.
  • the test standard is the same as that of Example 1.
  • the measured ultrasonic intensity is 8 W/cm 2
  • the ultrasonic frequency is 2300 KHz
  • the array test meets the standard.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)

Abstract

L'invention concerne un transducteur, son procédé de fabrication et son application. Le transducteur comprend un premier ensemble et un deuxième ensemble, ainsi qu'un troisième ensemble servant à connecter les premier et deuxième ensembles. Le premier ensemble comprend une couche de plaque de niveau supérieur (11) et une première couche de plomb (12). Le deuxième ensemble comprend une couche de plaque de niveau inférieur (21) et une seconde couche de plomb (22). Le troisième ensemble comprend une couche isolante (31), ainsi qu'une couche conductrice, une couche de parylène (32), et une couche creuse (33) situées dans la couche isolante (31). La couche de plaque de niveau supérieur (11), la première couche de plomb (12), et la seconde couche de plomb (22) sont toutes suspendues au-dessus de la couche de plaque de niveau inférieur (21). La couche de plaque de niveau supérieur (11) et la première couche de plomb (12) sont connectées au moyen de la couche conductrice dans le troisième ensemble. La couche de plaque de niveau inférieur (21) et la seconde couche de plomb (22) sont connectées au moyen de la couche conductrice dans le troisième ensemble. À condition de présenter une bonne intensité ultrasonore et une bonne fréquence ultrasonore, le transducteur peut réduire considérablement la surface d'un dispositif, ce qui facilite l'agencement du transducteur.
PCT/CN2020/129193 2020-03-13 2020-11-16 Transducteur, son procédé de fabrication et son application WO2021179663A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010177554.4 2020-03-13
CN202010177554.4A CN111348612B (zh) 2020-03-13 2020-03-13 一种换能器及其制备方法和应用

Publications (1)

Publication Number Publication Date
WO2021179663A1 true WO2021179663A1 (fr) 2021-09-16

Family

ID=71194490

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/129193 WO2021179663A1 (fr) 2020-03-13 2020-11-16 Transducteur, son procédé de fabrication et son application

Country Status (2)

Country Link
CN (1) CN111348612B (fr)
WO (1) WO2021179663A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111348612B (zh) * 2020-03-13 2023-06-27 深圳先进技术研究院 一种换能器及其制备方法和应用

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102538850A (zh) * 2012-01-04 2012-07-04 无锡智超医疗器械有限公司 一种电容式微机电超声传感器及其制作方法
WO2017205658A1 (fr) * 2016-05-25 2017-11-30 The Regents Of The University Of Colorado, A Body Corporate Gravure de couche atomique sur des microdispositifs et des nanodispositifs
CN108793061A (zh) * 2018-05-25 2018-11-13 岭南师范学院 一种全电极凸纹结构cmut器件的制备方法
CN110369247A (zh) * 2019-01-23 2019-10-25 深圳市德力凯医疗设备股份有限公司 一种环形阵列换能器及制备方法
CN110510573A (zh) * 2019-08-30 2019-11-29 中国科学院深圳先进技术研究院 一种电容式微机械超声换能器及其制备方法和应用
CN111348612A (zh) * 2020-03-13 2020-06-30 深圳先进技术研究院 一种换能器及其制备方法和应用

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102538850A (zh) * 2012-01-04 2012-07-04 无锡智超医疗器械有限公司 一种电容式微机电超声传感器及其制作方法
WO2017205658A1 (fr) * 2016-05-25 2017-11-30 The Regents Of The University Of Colorado, A Body Corporate Gravure de couche atomique sur des microdispositifs et des nanodispositifs
CN108793061A (zh) * 2018-05-25 2018-11-13 岭南师范学院 一种全电极凸纹结构cmut器件的制备方法
CN110369247A (zh) * 2019-01-23 2019-10-25 深圳市德力凯医疗设备股份有限公司 一种环形阵列换能器及制备方法
CN110510573A (zh) * 2019-08-30 2019-11-29 中国科学院深圳先进技术研究院 一种电容式微机械超声换能器及其制备方法和应用
CN111348612A (zh) * 2020-03-13 2020-06-30 深圳先进技术研究院 一种换能器及其制备方法和应用

Also Published As

Publication number Publication date
CN111348612B (zh) 2023-06-27
CN111348612A (zh) 2020-06-30

Similar Documents

Publication Publication Date Title
CN105413997B (zh) 柔性化电容式微加工超声换能器及其制备方法
CA2105647C (fr) Transducteur ultrasonique a couplage par l'air
US5619476A (en) Electrostatic ultrasonic transducer
JP4142040B2 (ja) 高分子基コンデンサー超音波エネルギー転換器の製造方法
US10751756B2 (en) Porosity control in piezoelectric films
CN201063346Y (zh) 一种双极化分割电极传感振动膜
US20210060561A1 (en) Microparticle multi-channel time-sharing separation device and method based on arcuate interdigital transducer
WO2021179663A1 (fr) Transducteur, son procédé de fabrication et son application
CN205199868U (zh) 柔性化电容式微加工超声换能器
CN110510573B (zh) 一种电容式微机械超声换能器及其制备方法和应用
CN105509872B (zh) 一种mems压电矢量水听器及其制备方法
CN108793061B (zh) 一种全电极凸纹结构cmut器件的制备方法
JP2018538672A (ja) アレイ・コネクタおよびその製造方法
WO2022170805A1 (fr) Transducteur ultrasonore micro-électromécanique et réseau
CN103995020A (zh) 一种基于pvdf薄膜的生物传感器阵列及其制作方法
Cianci et al. Fabrication of capacitive ultrasonic transducers by a low temperature and fully surface-micromachined process
KR100671419B1 (ko) 고주파 초음파 센서용 음향 정합층 및 그를 이용한 초음파센서의 제조 방법
Mescher et al. Novel MEMS microshell transducer arrays for high-resolution underwater acoustic imaging applications
Huang et al. Fabrication of Capacitive Micromachined Ultrasonic Transducers (CMUTs) using wafer bonding technology for low frequency (10 kHz-150 kHz) sonar applications
TW201902118A (zh) 聲波微收發傳感器之訊號精準度的提升方法
WO2017209336A1 (fr) Double membrane poreuse et son procédé de fabrication
CN209383383U (zh) 一种压电mems超声波传感器
WO2020048266A1 (fr) Dispositif spécial et procédé de microcristallisation de surface de produit de ciment
Wang et al. Piezoelectric Micromachined Ultrasonic Transducers with Micro-Hole Inter-Etch and Sealing Process on (111) Silicon Wafer
CN108768333A (zh) 一种浮置复合叉指结构及其制备方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20923886

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20923886

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 20923886

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 05/07/2023)

122 Ep: pct application non-entry in european phase

Ref document number: 20923886

Country of ref document: EP

Kind code of ref document: A1