WO2021035942A1 - Pixel compensation circuit - Google Patents
Pixel compensation circuit Download PDFInfo
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- WO2021035942A1 WO2021035942A1 PCT/CN2019/115240 CN2019115240W WO2021035942A1 WO 2021035942 A1 WO2021035942 A1 WO 2021035942A1 CN 2019115240 W CN2019115240 W CN 2019115240W WO 2021035942 A1 WO2021035942 A1 WO 2021035942A1
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- WIPO (PCT)
- Prior art keywords
- thin film
- film transistor
- electrically connected
- scan signal
- node
- Prior art date
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Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3266—Details of drivers for scan electrodes
Definitions
- the invention relates to the field of pixel circuits of collective tubes, and in particular to a pixel compensation circuit.
- Display panels such as Organic Light-Emitting Diode (OLED for short), have attracted great attention from academia and industry because of their huge development potential in the direction of solid-state lighting and flat panel displays.
- Organic light-emitting diode (OLED) panels can be made lighter and thinner, so flexible display technology will be the future development trend.
- the basic driving circuit of AMOLED is 2T1C, including a driving thin film transistor TFT (T1), a switching thin film transistor TFT (T2) and a storage capacitor Cst.
- OLED display technology has developed along the way. OLED pixel circuits can compensate for screen unevenness and device differences through internal and external compensation.
- the threshold voltage (Vth) of the driving thin film transistor TFT easily drifts, which causes the OLED driving current to fluctuate, which makes the OLED panel defective and affects the image quality.
- the present invention proposes a pixel compensation circuit designed to internally compensate the threshold voltage of an OLED self-luminous device.
- a pixel compensation circuit includes: a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a sixth thin film transistor, a first capacitor and an organic light emitting diode, wherein,
- the source of the first thin film transistor is electrically connected to a first node, the drain of the first thin film transistor is electrically connected to a second node, and the gate of the first thin film transistor is electrically connected to a third node;
- the source of the second thin film transistor is electrically connected to the third node
- the drain of the second thin film transistor is electrically connected to the first node
- the gate of the second thin film transistor is electrically connected to the third node.
- the source of the third thin film transistor is electrically connected to the second node, the drain of the third thin film transistor is electrically connected to a data line signal, and the gate of the third thin film transistor is electrically connected to a second scan signal ;
- the source of the fourth thin film transistor is electrically connected to the power supply voltage, the drain of the fourth thin film transistor is electrically connected to the first node, and the gate of the fourth thin film transistor is electrically connected to the first control signal;
- the source of the fifth thin film transistor is electrically connected to the second node, the drain of the fifth thin film transistor is electrically connected to the anode of the organic light emitting diode, and the gate of the fifth thin film transistor is electrically connected to Second control signal;
- the source of the sixth thin film transistor is electrically connected to the first node, the drain of the sixth thin film transistor outputs a reset signal, and the gate of the sixth thin film transistor is electrically connected to the first scan signal;
- One end of the first capacitor is electrically connected to the power supply voltage, and the other end of the first capacitor is electrically connected to the third node;
- the anode of the organic light emitting diode is electrically connected to the drain of the fifth thin film transistor, and the cathode of the organic light emitting diode is electrically connected to the negative electrode of a power supply;
- the combination of the first scan signal, the second scan signal, the third scan signal, the first control signal, and the second control signal sequentially corresponds to the reset phase, the data writing phase, and the light emitting phase ;
- the first to sixth thin film transistors include amorphous indium gallium zinc oxide materials.
- the first scan signal is at a low level
- the second scan signal is at a high level
- the third scan signal is at a low level
- the first control signal is at a high level
- the second control signal is at a low level.
- the first scan signal is at a high level
- the second scan signal is at a low level
- the third scan signal is at a low level.
- the first control signal is at a high level
- the second control signal is at a high level.
- the first scan signal is at a high level
- the second scan signal is at a high level
- the third scan signal is at a high level
- the first control signal is at a low level
- the second control signal is at a low level.
- the second thin film transistor, the fifth thin film transistor, and the sixth thin film transistor are turned on, and the gate of the first thin film transistor is turned on.
- the pole position is reset to a reset signal, and the reset signal is lower than the potential of the negative pole of the power supply.
- the fourth thin film transistor, the fifth thin film transistor, and the sixth thin film transistor are turned off, and the second thin film transistor and the The third thin film transistor is turned on.
- the second thin film transistor, the third thin film transistor, and the sixth thin film transistor are turned off, and the fourth thin film transistor and the first thin film transistor are turned off. Five thin film transistors are turned on.
- the second thin film transistor, the third thin film transistor, and the sixth thin film transistor are dual-channel thin film transistors.
- An embodiment of the present invention also provides a pixel compensation circuit, including: a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a sixth thin film transistor, a first capacitor, and an organic Light-emitting diodes, among them,
- the source of the first thin film transistor is electrically connected to a first node, the drain of the first thin film transistor is electrically connected to a second node, and the gate of the first thin film transistor is electrically connected to a third node;
- the source of the second thin film transistor is electrically connected to the third node
- the drain of the second thin film transistor is electrically connected to the first node
- the gate of the second thin film transistor is electrically connected to the third node.
- the source of the third thin film transistor is electrically connected to the second node, the drain of the third thin film transistor is electrically connected to a data line signal, and the gate of the third thin film transistor is electrically connected to a second scan signal ;
- the source of the fourth thin film transistor is electrically connected to the power supply voltage, the drain of the fourth thin film transistor is electrically connected to the first node, and the gate of the fourth thin film transistor is electrically connected to the first control signal;
- the source of the fifth thin film transistor is electrically connected to the second node, the drain of the fifth thin film transistor is electrically connected to the anode of the organic light emitting diode, and the gate of the fifth thin film transistor is electrically connected to Second control signal;
- the source of the sixth thin film transistor is electrically connected to the first node, the drain of the sixth thin film transistor outputs a reset signal, and the gate of the sixth thin film transistor is electrically connected to the first scan signal;
- One end of the first capacitor is electrically connected to the power supply voltage, and the other end of the first capacitor is electrically connected to the third node;
- the anode of the organic light emitting diode is electrically connected to the drain of the fifth thin film transistor, and the cathode of the organic light emitting diode is electrically connected to the negative electrode of a power supply.
- the combination of the first scan signal, the second scan signal, the third scan signal, the first control signal, and the second control signal corresponds in sequence In the reset phase, data writing phase and light emitting phase.
- the first scan signal is at a low level
- the second scan signal is at a high level
- the third scan signal is at a low level
- the first control signal is at a high level
- the second control signal is at a low level.
- the first scan signal is at a high level
- the second scan signal is at a low level
- the third scan signal is at a low level.
- the first control signal is at a high level
- the second control signal is at a high level.
- the first scan signal is at a high level
- the second scan signal is at a high level
- the third scan signal is at a high level
- the first control signal is at a low level
- the second control signal is at a low level.
- the second thin film transistor, the fifth thin film transistor, and the sixth thin film transistor are turned on, and the gate of the first thin film transistor is turned on.
- the pole position is reset to a reset signal, and the reset signal is lower than the potential of the negative pole of the power supply.
- the fourth thin film transistor, the fifth thin film transistor, and the sixth thin film transistor are turned off, and the second thin film transistor and the The third thin film transistor is turned on.
- the second thin film transistor, the third thin film transistor, and the sixth thin film transistor are turned off, and the fourth thin film transistor and the first thin film transistor are turned off. Five thin film transistors are turned on.
- the second thin film transistor, the third thin film transistor, and the sixth thin film transistor are dual-channel thin film transistors.
- the first thin film transistor to the sixth thin film transistor comprise amorphous indium gallium zinc oxide material
- the 6T1C (six thin film transistors and one capacitor) pixel compensation circuit proposed in the embodiment of the present invention realizes the reset function and the function of internally compensating the threshold voltage.
- FIG. 1 is a diagram of a pixel compensation circuit provided by an embodiment of the present invention.
- FIG. 2 is a signal timing diagram of a pixel compensation circuit provided by an embodiment of the present invention.
- FIG. 1 is a diagram of a pixel compensation circuit provided by an embodiment of the present invention.
- the present invention provides a pixel compensation circuit including: a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3, and a second thin film transistor T2.
- a pixel compensation circuit including: a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3, and a second thin film transistor T2.
- Four thin film transistors T4 a fifth thin film transistor T5, a sixth thin film transistor T6, a first capacitor C1, and an organic light emitting diode OLED, each of the first thin film transistor T1 to the sixth thin film transistor T6 includes a drain , Source and gate, among them,
- the source of the first thin film transistor T1 is electrically connected to the first node A, the drain is electrically connected to the second node B, and the gate is electrically connected to the third node C;
- the source of the second thin film transistor T2 is electrically connected to the third node C, the drain is electrically connected to the first node A, and the gate is electrically connected to the third scan signal SCAN3;
- the source of the third thin film transistor T3 is electrically connected to the second node B, the drain is electrically connected to the data line signal Data, and the gate is electrically connected to the second scan signal SCAN2;
- the source of the fourth thin film transistor T4 is electrically connected to the power supply voltage V DD , the drain is electrically connected to the first node A, and the gate is electrically connected to the first control signal EM1;
- the source of the fifth thin film transistor T5 is electrically connected to the second node B, the drain is electrically connected to the anode of the organic light emitting diode OLED, and the gate is electrically connected to the second control signal EM2;
- the source of the sixth thin film transistor T6 is electrically connected to the first node A, the drain outputs the reset signal VI, and the gate is electrically connected to the first scan signal SCAN1;
- One end of the first capacitor C1 is electrically connected to the power supply voltage V DD , and the other end is electrically connected to the third node C;
- the anode of the organic light emitting diode OLED is electrically connected to the drain of the fifth thin film transistor T5, and the cathode of the organic light emitting diode OLED is connected to the negative electrode V SS of the power supply.
- the first thin film transistor T1 is used as a driving transistor
- the second thin film transistor T2 to the sixth thin film transistor T6 are used as switching transistors.
- FIG. 2 it is a signal timing diagram of the pixel compensation circuit provided by the embodiment of the present invention.
- the combination of the first scan signal SCAN1, the second scan signal SCAN2, the third scan signal SCAN3, the first control signal EM1, and the second control signal EM2 sequentially corresponds to A reset stage (I), a data writing stage (II), and a light-emitting stage (III).
- the first scan signal SCAN1 is at a low level
- the second scan signal SCAN2 is at a high level
- the third scan signal SCAN3 is at a low level.
- the first control signal EM1 is at a high level
- the second control signal EM2 is at a low level.
- the first scan signal SCAN1 is at a low level, so that the sixth thin film transistor is turned on; the second scan signal SCAN2 Is high, making the third thin film transistor turn off; the third scan signal SCAN3 is low, making the second thin film transistor turn on; the first control signal EM1 is high, making the The fourth thin film transistor is turned off; the second control signal EM2 is at a low level, so that the fifth thin film transistor is turned on.
- the gate point of the first thin film transistor is reset to the reset signal VI, and the anode of the organic light emitting diode OLED is reset to VI+V th ( T1 ) , wherein the reset signal VI must be lower than the negative electrode of the power supply.
- Potential V SS Potential
- the first scan signal SCAN1 is at a high level
- the second scan signal SCAN2 is at a low level
- the third scan signal SCAN3 is Low level
- the first control signal EM1 is high level
- the second control signal EM2 is high level.
- the first scan signal SCAN1 is at a high level, so that the sixth thin film transistor is turned off; the second scan The signal SCAN2 is at a low level, so that the third thin film transistor is turned on; the third scan signal SCAN3 is at a low level, so that the second thin film transistor is turned on; the first control signal EM1 is at a high level, so that The fourth thin film transistor is turned off; the second control signal EM2 is at a high level, so that the fifth thin film transistor is turned off.
- the data signal Data enters the first thin film transistor through the third thin film transistor, and under the action of the second thin film transistor, the gate of the first thin film transistor writes V Data —V th ( T1 ) potential, and record the V th of the first thin film transistor.
- the first scan signal SCAN1 is at a high level
- the second scan signal SCAN2 is at a high level
- the third scan signal SCAN3 is at a high level.
- the first control signal EM1 is at a low level
- the second control signal EM2 is at a low level.
- the first scan signal SCAN1 is at a high level, so that the sixth thin film transistor is turned off; the second scan signal SCAN2 Is a high level, so that the third thin film transistor is turned off; the third scan signal SCAN3 is at a high level, so that the second thin film transistor is turned off; and the first control signal EM1 is a low level, so that the The fourth thin film transistor is turned on; the second control signal EM2 is at a low level, so that the fifth thin film transistor is turned on. Therefore, the current flows from the power supply voltage V DD to the negative electrode V SS of the power supply and passes through the organic light emitting diode OLED device to make it emit light.
- the magnitude of the current is controlled by the first thin film transistor:
- the first thin film transistor T1 is a driving thin film transistor
- the second thin film transistor T2 is responsible for grabbing the V th ⁇ V T1 of the first thin film transistor T1
- the second thin film transistor T2 Leakage current requirements are relatively strict, and are usually made into dual-channel thin film transistors.
- the third thin film transistor T3 controls the writing of the data signal Data.
- the third thin film transistor T3 can also be made into a double channel. ⁇ Thin Film Transistor.
- the fourth thin film transistor T4 controls the writing of the power supply voltage V DD signal.
- the fifth thin film transistor T5 controls the writing of the anode of the organic light emitting diode OLED
- the sixth thin film transistor T6 is a reset thin film transistor, in order to reduce the leakage current of the sixth thin film transistor T6 to the anode of the organic light emitting diode OLED
- the sixth thin film transistor T6 can also be made into a dual-channel thin film transistor.
- the first to sixth thin film transistors are preferably made of amorphous indium gallium zinc oxide materials.
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Abstract
A pixel compensation circuit, comprising a first thin film transistor (T1), a second thin film transistor (T2), a third thin film transistor (T3), a fourth thin film transistor (T4), a fifth thin film transistor (T5), a sixth thin film transistor (T6), a first capacitor (C1), and an organic light emitting diode (OLED). A reset function and an internal threshold voltage compensation function are implemented by a 6T1C pixel compensation circuit.
Description
本发明涉及集体管的像素电路领域,尤其涉及一种像素补偿电路。The invention relates to the field of pixel circuits of collective tubes, and in particular to a pixel compensation circuit.
显示面板,如有机发光二极管(Organic Light-Emitting Diode,简称:OLED)因其在固态照明和平板显示的方向拥有巨大的发展潜力而得到了学术界和产业界的极大关注。有机发光二极管(OLED)平板可以做的更轻更薄,因而柔性显示技术将是未来的发展趋势。Display panels, such as Organic Light-Emitting Diode (OLED for short), have attracted great attention from academia and industry because of their huge development potential in the direction of solid-state lighting and flat panel displays. Organic light-emitting diode (OLED) panels can be made lighter and thinner, so flexible display technology will be the future development trend.
OLED色域广、对比度高、节能、可折叠性,在新世代显示器中具有强的竞争力,AMOLED技术是柔性显示重点发展方向之一。 AMOLED的基本驱动电路是2T1C,包括一个驱动薄膜晶体管TFT(T1)、一个开关薄膜晶体管 TFT(T2)和一个存储电容Cst。 OLED的驱动电流由驱动薄膜晶体管TFT 控制,其电流大小为:I
OLED=k(V
gs-V
th)
2;其中,k为驱动薄膜晶体管TFT的电流放大系数,由驱动薄膜晶体管TFT本身特性决定,Vth为驱动薄膜晶体管TFT的阈值电压。由于驱动薄膜晶体管TFT的阈值电压(Vth)容易漂移,导致OLED驱动电流变动,使得OLED面板出现不良,影响画质。
OLED has a wide color gamut, high contrast ratio, energy saving, and foldability. It has strong competitiveness in the new generation of displays. AMOLED technology is one of the key development directions for flexible displays. The basic driving circuit of AMOLED is 2T1C, including a driving thin film transistor TFT (T1), a switching thin film transistor TFT (T2) and a storage capacitor Cst. The driving current of the OLED is controlled by the driving thin film transistor TFT, and its current size is: I OLED =k (V gs -V th ) 2 ; where k is the current amplification factor of the driving thin film transistor TFT, which is determined by the characteristics of the driving thin film transistor TFT itself , Vth is the threshold voltage of the thin film transistor TFT. Since the threshold voltage (Vth) of the driving thin film transistor TFT easily drifts, the driving current of the OLED changes, which makes the OLED panel defective and affects the image quality.
随着显示面板的发展,人们追求更大屏幕,更高的分辨率,更刺激的视觉效果,这无疑对面板制程、材料以及工艺提出了更高的要求。为了实现更加稳定、高品质和清晰度显示效果,OLED显示技术顺势发展,OLED像素电路可以通过内部和外补两种方式补偿屏幕的不均匀以及器件差异。With the development of display panels, people are pursuing larger screens, higher resolutions, and more exciting visual effects, which undoubtedly puts forward higher requirements on the panel manufacturing process, materials and craftsmanship. In order to achieve a more stable, high-quality and clear display effect, OLED display technology has developed along the way. OLED pixel circuits can compensate for screen unevenness and device differences through internal and external compensation.
现有技术的驱动电路中,由于驱动薄膜晶体管TFT的阈值电压(Vth)容易漂移,从而导致OLED驱动电流变动,使得OLED面板出现不良,影响画质。In the driving circuit of the prior art, the threshold voltage (Vth) of the driving thin film transistor TFT easily drifts, which causes the OLED driving current to fluctuate, which makes the OLED panel defective and affects the image quality.
为解决上述技术问题,本发明提出一种OLED 自发光器件设计的内部补偿阈值电压的像素补偿电路。In order to solve the above technical problems, the present invention proposes a pixel compensation circuit designed to internally compensate the threshold voltage of an OLED self-luminous device.
一种像素补偿电路,包括:第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第五薄膜晶体管、第六薄膜晶体管、第一电容以及有机发光二极管,其中,A pixel compensation circuit includes: a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a sixth thin film transistor, a first capacitor and an organic light emitting diode, wherein,
所述第一薄膜晶体管的源极电性连接第一节点,所述第一薄膜晶体管的漏极电性连接第二节点,所述第一薄膜晶体管的栅极电性连接第三节点;The source of the first thin film transistor is electrically connected to a first node, the drain of the first thin film transistor is electrically connected to a second node, and the gate of the first thin film transistor is electrically connected to a third node;
所述第二薄膜晶体管的源极电性连接所述第三节点,所述第二薄膜晶体管的漏极电性连接所述第一节点,所述第二薄膜晶体管的栅极电性连接第三扫描信号;The source of the second thin film transistor is electrically connected to the third node, the drain of the second thin film transistor is electrically connected to the first node, and the gate of the second thin film transistor is electrically connected to the third node. Scan signal
所述第三薄膜晶体管的源极电性连接所述第二节点,所述第三薄膜晶体管的漏极电性连接数据线信号,所述第三薄膜晶体管的栅极电性连接第二扫描信号;The source of the third thin film transistor is electrically connected to the second node, the drain of the third thin film transistor is electrically connected to a data line signal, and the gate of the third thin film transistor is electrically connected to a second scan signal ;
所述第四薄膜晶体管的源极电性连接电源电压,所述第四薄膜晶体管的漏极电性连接所述第一节点,所述第四薄膜晶体管的栅极电性连接第一控制信号;The source of the fourth thin film transistor is electrically connected to the power supply voltage, the drain of the fourth thin film transistor is electrically connected to the first node, and the gate of the fourth thin film transistor is electrically connected to the first control signal;
所述第五薄膜晶体管的源极电性连接所述第二节点,所述第五薄膜晶体管的漏极电性连接所述有机发光二极管的阳极,所述第五薄膜晶体管的栅极电性连接第二控制信号;The source of the fifth thin film transistor is electrically connected to the second node, the drain of the fifth thin film transistor is electrically connected to the anode of the organic light emitting diode, and the gate of the fifth thin film transistor is electrically connected to Second control signal;
所述第六薄膜晶体管的源极电性连接所述第一节点,所述第六薄膜晶体管的漏极输出复位信号,所述第六薄膜晶体管的栅极电性连接第一扫描信号;The source of the sixth thin film transistor is electrically connected to the first node, the drain of the sixth thin film transistor outputs a reset signal, and the gate of the sixth thin film transistor is electrically connected to the first scan signal;
所述第一电容的一端电性连接所述电源电压,所述第一电容的另一端电性连接所述第三节点;以及One end of the first capacitor is electrically connected to the power supply voltage, and the other end of the first capacitor is electrically connected to the third node; and
所述有机发光二极管的所述阳极电性连接所述第五薄膜晶体管的所述漏极,所述有机发光二极管的阴极电性连接电源负极;The anode of the organic light emitting diode is electrically connected to the drain of the fifth thin film transistor, and the cathode of the organic light emitting diode is electrically connected to the negative electrode of a power supply;
其中所述第一扫描信号、所述第二扫描信号、所述第三扫描信号、所述第一控制信号以及所述第二控制信号的组合依次对应于复位阶段、数据写入阶段以及发光阶段;The combination of the first scan signal, the second scan signal, the third scan signal, the first control signal, and the second control signal sequentially corresponds to the reset phase, the data writing phase, and the light emitting phase ;
其中所述第一薄膜晶体管至第六薄膜晶体管包括非晶铟镓锌氧化物材料。The first to sixth thin film transistors include amorphous indium gallium zinc oxide materials.
根据本发明实施例所提供的像素补偿电路,在所述复位阶段,所述第一扫描信号为低电平,所述第二扫描信号为高电平,所述第三扫描信号为低电平,所述第一控制信号为高电平,所述第二控制信号为低电平。According to the pixel compensation circuit provided by the embodiment of the present invention, in the reset phase, the first scan signal is at a low level, the second scan signal is at a high level, and the third scan signal is at a low level , The first control signal is at a high level, and the second control signal is at a low level.
根据本发明实施例所提供的像素补偿电路,在所述数据写入阶段,所述第一扫描信号为高电平,所述第二扫描信号为低电平,所述第三扫描信号为低电平,所述第一控制信号为高电平,所述第二控制信号为高电平。According to the pixel compensation circuit provided by the embodiment of the present invention, in the data writing stage, the first scan signal is at a high level, the second scan signal is at a low level, and the third scan signal is at a low level. Level, the first control signal is at a high level, and the second control signal is at a high level.
根据本发明实施例所提供的像素补偿电路,在所述发光阶段,所述第一扫描信号为高电平,所述第二扫描信号为高电平,所述第三扫描信号为高电平,所述第一控制信号为低电平,所述第二控制信号为低电平。According to the pixel compensation circuit provided by the embodiment of the present invention, in the light-emitting phase, the first scan signal is at a high level, the second scan signal is at a high level, and the third scan signal is at a high level , The first control signal is at a low level, and the second control signal is at a low level.
根据本发明实施例所提供的像素补偿电路,在所述复位阶段,所述第二薄膜晶体管、所述第五薄膜晶体管以及所述第六薄膜晶体管打开,所述第一薄膜晶体管的所述栅极点位复位成复位信号,且所述复位信号低于所述电源负极的电位。According to the pixel compensation circuit provided by the embodiment of the present invention, in the reset phase, the second thin film transistor, the fifth thin film transistor, and the sixth thin film transistor are turned on, and the gate of the first thin film transistor is turned on. The pole position is reset to a reset signal, and the reset signal is lower than the potential of the negative pole of the power supply.
根据本发明实施例所提供的像素补偿电路,在所述数据写入阶段,所述第四薄膜晶体管、所述第五薄膜晶体管以及所述第六薄膜晶体管关闭,所述第二薄膜晶体管和所述第三薄膜晶体管打开。According to the pixel compensation circuit provided by the embodiment of the present invention, in the data writing stage, the fourth thin film transistor, the fifth thin film transistor, and the sixth thin film transistor are turned off, and the second thin film transistor and the The third thin film transistor is turned on.
根据本发明实施例所提供的像素补偿电路,在所述发光阶段,所述第二薄膜晶体管、所述第三薄膜晶体管以及所述第六薄膜晶体管关闭,所述第四薄膜晶体管和所述第五薄膜晶体管打开。According to the pixel compensation circuit provided by the embodiment of the present invention, in the light-emitting phase, the second thin film transistor, the third thin film transistor, and the sixth thin film transistor are turned off, and the fourth thin film transistor and the first thin film transistor are turned off. Five thin film transistors are turned on.
根据本发明实施例所提供的像素补偿电路,所述第二薄膜晶体管、所述第三薄膜晶体管以及所述第六薄膜晶体管为双沟道薄膜晶体管。According to the pixel compensation circuit provided by the embodiment of the present invention, the second thin film transistor, the third thin film transistor, and the sixth thin film transistor are dual-channel thin film transistors.
本发明实施例还提供了一种像素补偿电路,包括:第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第五薄膜晶体管、第六薄膜晶体管、第一电容以及有机发光二极管,其中,An embodiment of the present invention also provides a pixel compensation circuit, including: a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a sixth thin film transistor, a first capacitor, and an organic Light-emitting diodes, among them,
所述第一薄膜晶体管的源极电性连接第一节点,所述第一薄膜晶体管的漏极电性连接第二节点,所述第一薄膜晶体管的栅极电性连接第三节点;The source of the first thin film transistor is electrically connected to a first node, the drain of the first thin film transistor is electrically connected to a second node, and the gate of the first thin film transistor is electrically connected to a third node;
所述第二薄膜晶体管的源极电性连接所述第三节点,所述第二薄膜晶体管的漏极电性连接所述第一节点,所述第二薄膜晶体管的栅极电性连接第三扫描信号;The source of the second thin film transistor is electrically connected to the third node, the drain of the second thin film transistor is electrically connected to the first node, and the gate of the second thin film transistor is electrically connected to the third node. Scan signal
所述第三薄膜晶体管的源极电性连接所述第二节点,所述第三薄膜晶体管的漏极电性连接数据线信号,所述第三薄膜晶体管的栅极电性连接第二扫描信号;The source of the third thin film transistor is electrically connected to the second node, the drain of the third thin film transistor is electrically connected to a data line signal, and the gate of the third thin film transistor is electrically connected to a second scan signal ;
所述第四薄膜晶体管的源极电性连接电源电压,所述第四薄膜晶体管的漏极电性连接所述第一节点,所述第四薄膜晶体管的栅极电性连接第一控制信号;The source of the fourth thin film transistor is electrically connected to the power supply voltage, the drain of the fourth thin film transistor is electrically connected to the first node, and the gate of the fourth thin film transistor is electrically connected to the first control signal;
所述第五薄膜晶体管的源极电性连接所述第二节点,所述第五薄膜晶体管的漏极电性连接所述有机发光二极管的阳极,所述第五薄膜晶体管的栅极电性连接第二控制信号;The source of the fifth thin film transistor is electrically connected to the second node, the drain of the fifth thin film transistor is electrically connected to the anode of the organic light emitting diode, and the gate of the fifth thin film transistor is electrically connected to Second control signal;
所述第六薄膜晶体管的源极电性连接所述第一节点,所述第六薄膜晶体管的漏极输出复位信号,所述第六薄膜晶体管的栅极电性连接第一扫描信号;The source of the sixth thin film transistor is electrically connected to the first node, the drain of the sixth thin film transistor outputs a reset signal, and the gate of the sixth thin film transistor is electrically connected to the first scan signal;
所述第一电容的一端电性连接所述电源电压,所述第一电容的另一端电性连接所述第三节点;以及One end of the first capacitor is electrically connected to the power supply voltage, and the other end of the first capacitor is electrically connected to the third node; and
所述有机发光二极管的所述阳极电性连接所述第五薄膜晶体管的所述漏极,所述有机发光二极管的阴极电性连接电源负极。The anode of the organic light emitting diode is electrically connected to the drain of the fifth thin film transistor, and the cathode of the organic light emitting diode is electrically connected to the negative electrode of a power supply.
根据本发明实施例所提供的像素补偿电路,所述第一扫描信号、所述第二扫描信号、所述第三扫描信号、所述第一控制信号以及所述第二控制信号的组合依次对应于复位阶段、数据写入阶段以及发光阶段。According to the pixel compensation circuit provided by the embodiment of the present invention, the combination of the first scan signal, the second scan signal, the third scan signal, the first control signal, and the second control signal corresponds in sequence In the reset phase, data writing phase and light emitting phase.
根据本发明实施例所提供的像素补偿电路,在所述复位阶段,所述第一扫描信号为低电平,所述第二扫描信号为高电平,所述第三扫描信号为低电平,所述第一控制信号为高电平,所述第二控制信号为低电平。According to the pixel compensation circuit provided by the embodiment of the present invention, in the reset phase, the first scan signal is at a low level, the second scan signal is at a high level, and the third scan signal is at a low level , The first control signal is at a high level, and the second control signal is at a low level.
根据本发明实施例所提供的像素补偿电路,在所述数据写入阶段,所述第一扫描信号为高电平,所述第二扫描信号为低电平,所述第三扫描信号为低电平,所述第一控制信号为高电平,所述第二控制信号为高电平。According to the pixel compensation circuit provided by the embodiment of the present invention, in the data writing stage, the first scan signal is at a high level, the second scan signal is at a low level, and the third scan signal is at a low level. Level, the first control signal is at a high level, and the second control signal is at a high level.
根据本发明实施例所提供的像素补偿电路,在所述发光阶段,所述第一扫描信号为高电平,所述第二扫描信号为高电平,所述第三扫描信号为高电平,所述第一控制信号为低电平,所述第二控制信号为低电平。According to the pixel compensation circuit provided by the embodiment of the present invention, in the light-emitting phase, the first scan signal is at a high level, the second scan signal is at a high level, and the third scan signal is at a high level , The first control signal is at a low level, and the second control signal is at a low level.
根据本发明实施例所提供的像素补偿电路,在所述复位阶段,所述第二薄膜晶体管、所述第五薄膜晶体管以及所述第六薄膜晶体管打开,所述第一薄膜晶体管的所述栅极点位复位成复位信号,且所述复位信号低于所述电源负极的电位。According to the pixel compensation circuit provided by the embodiment of the present invention, in the reset phase, the second thin film transistor, the fifth thin film transistor, and the sixth thin film transistor are turned on, and the gate of the first thin film transistor is turned on. The pole position is reset to a reset signal, and the reset signal is lower than the potential of the negative pole of the power supply.
根据本发明实施例所提供的像素补偿电路,在所述数据写入阶段,所述第四薄膜晶体管、所述第五薄膜晶体管以及所述第六薄膜晶体管关闭,所述第二薄膜晶体管和所述第三薄膜晶体管打开。According to the pixel compensation circuit provided by the embodiment of the present invention, in the data writing stage, the fourth thin film transistor, the fifth thin film transistor, and the sixth thin film transistor are turned off, and the second thin film transistor and the The third thin film transistor is turned on.
根据本发明实施例所提供的像素补偿电路,在所述发光阶段,所述第二薄膜晶体管、所述第三薄膜晶体管以及所述第六薄膜晶体管关闭,所述第四薄膜晶体管和所述第五薄膜晶体管打开。According to the pixel compensation circuit provided by the embodiment of the present invention, in the light-emitting phase, the second thin film transistor, the third thin film transistor, and the sixth thin film transistor are turned off, and the fourth thin film transistor and the first thin film transistor are turned off. Five thin film transistors are turned on.
根据本发明实施例所提供的像素补偿电路,所述第二薄膜晶体管、所述第三薄膜晶体管以及所述第六薄膜晶体管为双沟道薄膜晶体管。According to the pixel compensation circuit provided by the embodiment of the present invention, the second thin film transistor, the third thin film transistor, and the sixth thin film transistor are dual-channel thin film transistors.
根据本发明实施例所提供的像素补偿电路,所述第一薄膜晶体管至第六薄膜晶体管包括非晶铟镓锌氧化物材料According to the pixel compensation circuit provided by the embodiment of the present invention, the first thin film transistor to the sixth thin film transistor comprise amorphous indium gallium zinc oxide material
本发明实施例所提出的6T1C(六个薄膜晶体管及一个电容)像素补偿电路,实现了复位作用以及内部补偿阈值电压的功能。The 6T1C (six thin film transistors and one capacitor) pixel compensation circuit proposed in the embodiment of the present invention realizes the reset function and the function of internally compensating the threshold voltage.
图1为本发明实施例所提供的像素补偿电路图。FIG. 1 is a diagram of a pixel compensation circuit provided by an embodiment of the present invention.
图2为本发明实施例所提供的像素补偿电路的信号时序图。FIG. 2 is a signal timing diagram of a pixel compensation circuit provided by an embodiment of the present invention.
以下各实施例的说明是参考附加的图式,用以例示本揭示可用以实施的特定实施例。The description of the following embodiments refers to the attached drawings to illustrate specific embodiments that the present disclosure can be implemented.
为了让本揭示的上述及其他目的、特征、优点能更明显易懂,下文将特举本揭示优选实施例,并配合所附图式,作详细说明如下。再者,本揭示所提到的方向用语,例如上、下、顶、底、前、后、左、右、内、外、侧层、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本揭示,而非用以限制本揭示。In order to make the above and other objectives, features, and advantages of the present disclosure more obvious and understandable, the following will specifically illustrate the preferred embodiments of the present disclosure, in conjunction with the accompanying drawings, and describe in detail as follows. Furthermore, the directional terms mentioned in this disclosure, such as up, down, top, bottom, front, back, left, right, inside, outside, side layer, surrounding, center, horizontal, horizontal, vertical, vertical, axial , Radial, uppermost or lowermost layers, etc., are only the direction of reference to the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present disclosure, rather than to limit the present disclosure.
在图中,结构相似的单元是以相同标号表示。In the figure, units with similar structures are indicated by the same reference numerals.
图1为本发明实施例所提供的像素补偿电路图,如图1所示,本发明提供一种像素补偿电路,包括:第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5、第六薄膜晶体管T6、第一电容C1以及有机发光二极管OLED,所述第一薄膜晶体管T1至第六薄膜晶体管T6中的每一个薄膜晶体管均包括漏极、源极以及栅极,其中,FIG. 1 is a diagram of a pixel compensation circuit provided by an embodiment of the present invention. As shown in FIG. 1, the present invention provides a pixel compensation circuit including: a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3, and a second thin film transistor T2. Four thin film transistors T4, a fifth thin film transistor T5, a sixth thin film transistor T6, a first capacitor C1, and an organic light emitting diode OLED, each of the first thin film transistor T1 to the sixth thin film transistor T6 includes a drain , Source and gate, among them,
所述第一薄膜晶体管T1的源极电性连接第一节点A,漏极电性连接第二节点B,栅极电性连接第三节点C;The source of the first thin film transistor T1 is electrically connected to the first node A, the drain is electrically connected to the second node B, and the gate is electrically connected to the third node C;
所述第二薄膜晶体管T2的源极电性连接第三节点C,漏极电性连接第一节点A,栅极电性连接第三扫描信号SCAN3;The source of the second thin film transistor T2 is electrically connected to the third node C, the drain is electrically connected to the first node A, and the gate is electrically connected to the third scan signal SCAN3;
所述第三薄膜晶体管T3的源极电性连接第二节点B,漏极电性连接数据线信号Data,栅极电性连接第二扫描信号SCAN2;The source of the third thin film transistor T3 is electrically connected to the second node B, the drain is electrically connected to the data line signal Data, and the gate is electrically connected to the second scan signal SCAN2;
所述第四薄膜晶体管T4的源极电性连接电源电压V
DD,漏极电性连接第一节点A,栅极电性连接第一控制信号EM1;
The source of the fourth thin film transistor T4 is electrically connected to the power supply voltage V DD , the drain is electrically connected to the first node A, and the gate is electrically connected to the first control signal EM1;
所述第五薄膜晶体管T5的源极电性连接第二节点B,漏极电性连接所述有机发光二极管OLED的阳极,栅极电性连接第二控制信号EM2;The source of the fifth thin film transistor T5 is electrically connected to the second node B, the drain is electrically connected to the anode of the organic light emitting diode OLED, and the gate is electrically connected to the second control signal EM2;
所述第六薄膜晶体管T6的源极电性连接第一节点A,漏极输出复位信号VI,栅极电性连接第一扫描信号SCAN1;The source of the sixth thin film transistor T6 is electrically connected to the first node A, the drain outputs the reset signal VI, and the gate is electrically connected to the first scan signal SCAN1;
所述第一电容C1的一端电性连接所述电源电压V
DD,另一端电性连接所述第三节点C;以及
One end of the first capacitor C1 is electrically connected to the power supply voltage V DD , and the other end is electrically connected to the third node C; and
所述有机发光二极管OLED的阳极电性连接所述第五薄膜晶体管T5的漏极,所述有机发光二极管OLED的阴极接电源负极V
SS。
The anode of the organic light emitting diode OLED is electrically connected to the drain of the fifth thin film transistor T5, and the cathode of the organic light emitting diode OLED is connected to the negative electrode V SS of the power supply.
在本实施例中,所述第一薄膜晶体管T1作为驱动晶体管,所述第二薄膜晶体管T2到所述第六薄膜晶体管T6作为开关晶体管。In this embodiment, the first thin film transistor T1 is used as a driving transistor, and the second thin film transistor T2 to the sixth thin film transistor T6 are used as switching transistors.
以下结合附图来介绍本发明实施例中的像素补偿电路的工作原理。如图2所示,为本发明实施例所提供的像素补偿电路的信号时序图。在本实施例中,所述第一扫描信号SCAN1、所述第二扫描信号SCAN2、所述第三扫描信号SCAN3、所述第一控制信号EM1以及所述第二控制信号EM2的组合依次对应于一复位阶段(Ⅰ)、一数据写入阶段(Ⅱ)以及一发光阶段(Ⅲ)。The working principle of the pixel compensation circuit in the embodiment of the present invention will be described below with reference to the drawings. As shown in FIG. 2, it is a signal timing diagram of the pixel compensation circuit provided by the embodiment of the present invention. In this embodiment, the combination of the first scan signal SCAN1, the second scan signal SCAN2, the third scan signal SCAN3, the first control signal EM1, and the second control signal EM2 sequentially corresponds to A reset stage (I), a data writing stage (II), and a light-emitting stage (III).
在所述复位阶段(Ⅰ)中,如图2所示,所述第一扫描信号SCAN1为低电平,所述第二扫描信号SCAN2为高电平,所述第三扫描信号SCAN3为低电平,所述第一控制信号EM1为高电平,所述第二控制信号EM2为低电平。In the reset phase (I), as shown in FIG. 2, the first scan signal SCAN1 is at a low level, the second scan signal SCAN2 is at a high level, and the third scan signal SCAN3 is at a low level. Level, the first control signal EM1 is at a high level, and the second control signal EM2 is at a low level.
进一步的,在图1所示的电路图中,在所述复位阶段(Ⅰ)中,所述第一扫描信号SCAN1为低电平,使得所述第六薄膜晶体管打开;所述第二扫描信号SCAN2为高电平,使得所述第三薄膜晶体管关闭;所述第三扫描信号SCAN3为低电平,使得所述第二薄膜晶体管打开;所述第一控制信号EM1为高电平,使得所述第四薄膜晶体管关闭;所述第二控制信号EM2为低电平,使得所述第五薄膜晶体管打开。此时,所述第一薄膜晶体管的栅极点位复位成复位信号VI,所述有机发光二极管OLED的阳极复位为VI+V
th
(
T1
),其中,所述复位信号VI必须低于电源负极的电位V
SS。
Further, in the circuit diagram shown in FIG. 1, in the reset phase (I), the first scan signal SCAN1 is at a low level, so that the sixth thin film transistor is turned on; the second scan signal SCAN2 Is high, making the third thin film transistor turn off; the third scan signal SCAN3 is low, making the second thin film transistor turn on; the first control signal EM1 is high, making the The fourth thin film transistor is turned off; the second control signal EM2 is at a low level, so that the fifth thin film transistor is turned on. At this time, the gate point of the first thin film transistor is reset to the reset signal VI, and the anode of the organic light emitting diode OLED is reset to VI+V th ( T1 ) , wherein the reset signal VI must be lower than the negative electrode of the power supply. Potential V SS .
在所述数据写入阶段(Ⅱ)中,如图2所示,所述第一扫描信号SCAN1为高电平,所述第二扫描信号SCAN2为低电平,所述第三扫描信号SCAN3为低电平,所述第一控制信号EM1为高电平,所述第二控制信号EM2为高电平。In the data writing stage (II), as shown in FIG. 2, the first scan signal SCAN1 is at a high level, the second scan signal SCAN2 is at a low level, and the third scan signal SCAN3 is Low level, the first control signal EM1 is high level, and the second control signal EM2 is high level.
进一步的,在图1所示的电路图中,在所述数据写入阶段(Ⅱ)中,所述第一扫描信号SCAN1为高电平,使得所述第六薄膜晶体管关闭;所述第二扫描信号SCAN2为低电平,使得所述第三薄膜晶体管打开;所述第三扫描信号SCAN3为低电平,使得所述第二薄膜晶体管打开;所述第一控制信号EM1为高电平,使得所述第四薄膜晶体管关闭;所述第二控制信号EM2为高电平,使得所述第五薄膜晶体管关闭。随后,数据信号Data通过所述第三薄膜晶体管进入到所述第一薄膜晶体管,在所述第二薄膜晶体管的作用下,所述第一薄膜晶体管的所述栅极写入V
Data—V
th
(
T1
)电位,并记录所述第一薄膜晶体管的V
th。
Further, in the circuit diagram shown in FIG. 1, in the data writing stage (II), the first scan signal SCAN1 is at a high level, so that the sixth thin film transistor is turned off; the second scan The signal SCAN2 is at a low level, so that the third thin film transistor is turned on; the third scan signal SCAN3 is at a low level, so that the second thin film transistor is turned on; the first control signal EM1 is at a high level, so that The fourth thin film transistor is turned off; the second control signal EM2 is at a high level, so that the fifth thin film transistor is turned off. Subsequently, the data signal Data enters the first thin film transistor through the third thin film transistor, and under the action of the second thin film transistor, the gate of the first thin film transistor writes V Data —V th ( T1 ) potential, and record the V th of the first thin film transistor.
在所述发光阶段(Ⅲ)中,如图2所示,所述第一扫描信号SCAN1为高电平,所述第二扫描信号SCAN2为高电平,所述第三扫描信号SCAN3为高电平,所述第一控制信号EM1为低电平,所述第二控制信号EM2为低电平。In the light-emitting stage (III), as shown in FIG. 2, the first scan signal SCAN1 is at a high level, the second scan signal SCAN2 is at a high level, and the third scan signal SCAN3 is at a high level. Level, the first control signal EM1 is at a low level, and the second control signal EM2 is at a low level.
进一步的,在图1所示的电路图中,在所述发光阶段(Ⅲ)中,所述第一扫描信号SCAN1为高电平,使得所述第六薄膜晶体管关闭;所述第二扫描信号SCAN2为高电平,使得所述第三薄膜晶体管关闭;所述第三扫描信号SCAN3为高电平,使得所述第二薄膜晶体管关闭;所述第一控制信号EM1为低电平,使得所述第四薄膜晶体管打开;所述第二控制信号EM2为低电平,使得所述第五薄膜晶体管打开。因此,电流从电源电压V
DD流向电源负极V
SS,经过有机发光二极管OLED器件,使其发光。其中,所述电流的大小收到所述第一薄膜晶体管的控制:
Further, in the circuit diagram shown in FIG. 1, in the light-emitting stage (III), the first scan signal SCAN1 is at a high level, so that the sixth thin film transistor is turned off; the second scan signal SCAN2 Is a high level, so that the third thin film transistor is turned off; the third scan signal SCAN3 is at a high level, so that the second thin film transistor is turned off; and the first control signal EM1 is a low level, so that the The fourth thin film transistor is turned on; the second control signal EM2 is at a low level, so that the fifth thin film transistor is turned on. Therefore, the current flows from the power supply voltage V DD to the negative electrode V SS of the power supply and passes through the organic light emitting diode OLED device to make it emit light. Wherein, the magnitude of the current is controlled by the first thin film transistor:
I
OLED=k(V
gs—V
th)
2= k(VDD—(data—V
th)—V
th)
I OLED =k(V gs —V th ) 2 = k(VDD—(data—V th )—V th )
在本实施例中,所述第一薄膜晶体管T1为驱动薄膜晶体管,所述第二薄膜晶体管T2负责抓取所述第一薄膜晶体管T1的V
th—V
T1 ,所述第二薄膜晶体管T2的漏电流要求比较严,通常会制作成双沟道薄膜晶体管。所述第三薄膜晶体管T3控制数据信号Data 的写入,为了减少所述第三薄膜晶体管T3漏电流对所述有机发光二极管OLED阳极的影响,所述第三薄膜晶体管T3也可以制作成双沟道薄膜晶体管。所述第四薄膜晶体管T4控制所述电源电压V
DD信号的写入。所述第五薄膜晶体管T5 控制所述有机发光二极管OLED阳极的写入,所述第六薄膜晶体管T6为复位薄膜晶体管, 为了减少所述第六薄膜晶体管T6漏电流对所述有机发光二极管OLED阳极的影响,所述第六薄膜晶体管T6也可以制作成双沟道薄膜晶体管。在本实施例中,所述第一薄膜晶体管至第六薄膜晶体管优选为非晶铟镓锌氧化物材料制作。
In this embodiment, the first thin film transistor T1 is a driving thin film transistor, the second thin film transistor T2 is responsible for grabbing the V th −V T1 of the first thin film transistor T1, and the second thin film transistor T2 Leakage current requirements are relatively strict, and are usually made into dual-channel thin film transistors. The third thin film transistor T3 controls the writing of the data signal Data. In order to reduce the influence of the leakage current of the third thin film transistor T3 on the anode of the organic light emitting diode OLED, the third thin film transistor T3 can also be made into a double channel.道Thin Film Transistor. The fourth thin film transistor T4 controls the writing of the power supply voltage V DD signal. The fifth thin film transistor T5 controls the writing of the anode of the organic light emitting diode OLED, the sixth thin film transistor T6 is a reset thin film transistor, in order to reduce the leakage current of the sixth thin film transistor T6 to the anode of the organic light emitting diode OLED The sixth thin film transistor T6 can also be made into a dual-channel thin film transistor. In this embodiment, the first to sixth thin film transistors are preferably made of amorphous indium gallium zinc oxide materials.
尽管已经相对于一个或多个实现方式示出并描述了本揭示,但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本揭示包括所有这样的修改和变型,并且仅由所附权利要求的范围限制。特别地关于由上述组件执行的各种功能,用于描述这样的组件的术语旨在对应于执行所述组件的指定功能(例如其在功能上是等价的)的任意组件(除非另外指示),即使在结构上与执行本文所示的本说明书的示范性实现方式中的功能的公开结构不等同。此外,尽管本说明书的特定特征已经相对于若干实现方式中的仅一个被公开,但是这种特征可以与如可以对给定或特定应用而言是期望和有利的其他实现方式的一个或多个其他特征组合。而且,就术语“包括”、“具有”、“含有”或其变形被用在具体实施方式或权利要求中而言,这样的术语旨在以与术语“包含”相似的方式包括。Although the present disclosure has been shown and described with respect to one or more implementation manners, those skilled in the art will think of equivalent variations and modifications based on the reading and understanding of the specification and the accompanying drawings. The present disclosure includes all such modifications and variations, and is limited only by the scope of the appended claims. Especially with regard to the various functions performed by the above-mentioned components, the terms used to describe such components are intended to correspond to any component (unless otherwise indicated) that performs the specified function of the component (for example, it is functionally equivalent) , Even if the structure is not equivalent to the disclosed structure that performs the functions in the exemplary implementation of the present specification shown herein. In addition, although a specific feature of this specification has been disclosed with respect to only one of several implementations, this feature can be combined with one or more of other implementations that may be desirable and advantageous for a given or specific application. Other feature combinations. Moreover, as far as the terms "including", "having", "containing" or their variants are used in specific embodiments or claims, such terms are intended to be included in a similar manner to the term "comprising".
以上仅是本揭示的优选实施方式,应当指出,对于本领域普通技术人员,在不脱离本揭示原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本揭示的保护范围。The above are only the preferred embodiments of the present disclosure. It should be pointed out that for those of ordinary skill in the art, without departing from the principles of the present disclosure, several improvements and modifications can be made, and these improvements and modifications should also be regarded as the present disclosure. protected range.
Claims (18)
- 一种像素补偿电路,包括:第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第五薄膜晶体管、第六薄膜晶体管、第一电容以及有机发光二极管,其中,A pixel compensation circuit includes: a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a sixth thin film transistor, a first capacitor and an organic light emitting diode, wherein,所述第一薄膜晶体管的源极电性连接第一节点,所述第一薄膜晶体管的漏极电性连接第二节点,所述第一薄膜晶体管的栅极电性连接第三节点;The source of the first thin film transistor is electrically connected to a first node, the drain of the first thin film transistor is electrically connected to a second node, and the gate of the first thin film transistor is electrically connected to a third node;所述第二薄膜晶体管的源极电性连接所述第三节点,所述第二薄膜晶体管的漏极电性连接所述第一节点,所述第二薄膜晶体管的栅极电性连接第三扫描信号;The source of the second thin film transistor is electrically connected to the third node, the drain of the second thin film transistor is electrically connected to the first node, and the gate of the second thin film transistor is electrically connected to the third node. Scan signal所述第三薄膜晶体管的源极电性连接所述第二节点,所述第三薄膜晶体管的漏极电性连接数据线信号,所述第三薄膜晶体管的栅极电性连接第二扫描信号;The source of the third thin film transistor is electrically connected to the second node, the drain of the third thin film transistor is electrically connected to a data line signal, and the gate of the third thin film transistor is electrically connected to a second scan signal ;所述第四薄膜晶体管的源极电性连接电源电压,所述第四薄膜晶体管的漏极电性连接所述第一节点,所述第四薄膜晶体管的栅极电性连接第一控制信号;The source of the fourth thin film transistor is electrically connected to the power supply voltage, the drain of the fourth thin film transistor is electrically connected to the first node, and the gate of the fourth thin film transistor is electrically connected to the first control signal;所述第五薄膜晶体管的源极电性连接所述第二节点,所述第五薄膜晶体管的漏极电性连接所述有机发光二极管的阳极,所述第五薄膜晶体管的栅极电性连接第二控制信号;The source of the fifth thin film transistor is electrically connected to the second node, the drain of the fifth thin film transistor is electrically connected to the anode of the organic light emitting diode, and the gate of the fifth thin film transistor is electrically connected to Second control signal;所述第六薄膜晶体管的源极电性连接所述第一节点,所述第六薄膜晶体管的漏极输出复位信号,所述第六薄膜晶体管的栅极电性连接第一扫描信号;The source of the sixth thin film transistor is electrically connected to the first node, the drain of the sixth thin film transistor outputs a reset signal, and the gate of the sixth thin film transistor is electrically connected to the first scan signal;所述第一电容的一端电性连接所述电源电压,所述第一电容的另一端电性连接所述第三节点;以及One end of the first capacitor is electrically connected to the power supply voltage, and the other end of the first capacitor is electrically connected to the third node; and所述有机发光二极管的所述阳极电性连接所述第五薄膜晶体管的所述漏极,所述有机发光二极管的阴极电性连接电源负极;The anode of the organic light emitting diode is electrically connected to the drain of the fifth thin film transistor, and the cathode of the organic light emitting diode is electrically connected to the negative electrode of a power supply;其中所述第一扫描信号、所述第二扫描信号、所述第三扫描信号、所述第一控制信号以及所述第二控制信号的组合依次对应于复位阶段、数据写入阶段以及发光阶段;The combination of the first scan signal, the second scan signal, the third scan signal, the first control signal, and the second control signal sequentially corresponds to the reset phase, the data writing phase, and the light emitting phase ;其中所述第一薄膜晶体管至第六薄膜晶体管包括非晶铟镓锌氧化物材料。The first to sixth thin film transistors include amorphous indium gallium zinc oxide materials.
- 根据权利要求1所述的像素补偿电路,其中在所述复位阶段,所述第一扫描信号为低电平,所述第二扫描信号为高电平,所述第三扫描信号为低电平,所述第一控制信号为高电平,所述第二控制信号为低电平。4. The pixel compensation circuit according to claim 1, wherein in the reset phase, the first scan signal is at a low level, the second scan signal is at a high level, and the third scan signal is at a low level , The first control signal is at a high level, and the second control signal is at a low level.
- 根据权利要求2所述的像素补偿电路,其中在所述数据写入阶段,所述第一扫描信号为高电平,所述第二扫描信号为低电平,所述第三扫描信号为低电平,所述第一控制信号为高电平,所述第二控制信号为高电平。The pixel compensation circuit according to claim 2, wherein in the data writing stage, the first scan signal is at a high level, the second scan signal is at a low level, and the third scan signal is at a low level. Level, the first control signal is at a high level, and the second control signal is at a high level.
- 根据权利要求3所述的像素补偿电路,其中在所述发光阶段,所述第一扫描信号为高电平,所述第二扫描信号为高电平,所述第三扫描信号为高电平,所述第一控制信号为低电平,所述第二控制信号为低电平。4. The pixel compensation circuit according to claim 3, wherein in the light-emitting phase, the first scan signal is at a high level, the second scan signal is at a high level, and the third scan signal is at a high level , The first control signal is at a low level, and the second control signal is at a low level.
- 根据权利要求1所述的像素补偿电路,其中在所述复位阶段,所述第二薄膜晶体管、所述第五薄膜晶体管以及所述第六薄膜晶体管打开,所述第一薄膜晶体管的所述栅极点位复位成复位信号,且所述复位信号低于所述电源负极的电位。The pixel compensation circuit according to claim 1, wherein in the reset phase, the second thin film transistor, the fifth thin film transistor, and the sixth thin film transistor are turned on, and the gate of the first thin film transistor The pole position is reset to a reset signal, and the reset signal is lower than the potential of the negative pole of the power supply.
- 根据权利要求2所述的像素补偿电路,其中在所述数据写入阶段,所述第四薄膜晶体管、所述第五薄膜晶体管以及所述第六薄膜晶体管关闭,所述第二薄膜晶体管和所述第三薄膜晶体管打开。The pixel compensation circuit according to claim 2, wherein in the data writing stage, the fourth thin film transistor, the fifth thin film transistor, and the sixth thin film transistor are turned off, and the second thin film transistor and the second thin film transistor are turned off. The third thin film transistor is turned on.
- 根据权利要求3所述的像素补偿电路,其中在所述发光阶段,所述第二薄膜晶体管、所述第三薄膜晶体管以及所述第六薄膜晶体管关闭,所述第四薄膜晶体管和所述第五薄膜晶体管打开。4. The pixel compensation circuit according to claim 3, wherein in the light-emitting phase, the second thin film transistor, the third thin film transistor, and the sixth thin film transistor are turned off, and the fourth thin film transistor and the first thin film transistor are turned off. Five thin film transistors are turned on.
- 根据权利要求1所述的像素补偿电路,其中所述第二薄膜晶体管、所述第三薄膜晶体管以及所述第六薄膜晶体管为双沟道薄膜晶体管。The pixel compensation circuit according to claim 1, wherein the second thin film transistor, the third thin film transistor, and the sixth thin film transistor are dual-channel thin film transistors.
- 一种像素补偿电路,包括:第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第五薄膜晶体管、第六薄膜晶体管、第一电容以及有机发光二极管,其中,A pixel compensation circuit includes: a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a sixth thin film transistor, a first capacitor and an organic light emitting diode, wherein,所述第一薄膜晶体管的源极电性连接第一节点,所述第一薄膜晶体管的漏极电性连接第二节点,所述第一薄膜晶体管的栅极电性连接第三节点;The source of the first thin film transistor is electrically connected to a first node, the drain of the first thin film transistor is electrically connected to a second node, and the gate of the first thin film transistor is electrically connected to a third node;所述第二薄膜晶体管的源极电性连接所述第三节点,所述第二薄膜晶体管的漏极电性连接所述第一节点,所述第二薄膜晶体管的栅极电性连接第三扫描信号;The source of the second thin film transistor is electrically connected to the third node, the drain of the second thin film transistor is electrically connected to the first node, and the gate of the second thin film transistor is electrically connected to the third node. Scan signal所述第三薄膜晶体管的源极电性连接所述第二节点,所述第三薄膜晶体管的漏极电性连接数据线信号,所述第三薄膜晶体管的栅极电性连接第二扫描信号;The source of the third thin film transistor is electrically connected to the second node, the drain of the third thin film transistor is electrically connected to a data line signal, and the gate of the third thin film transistor is electrically connected to a second scan signal ;所述第四薄膜晶体管的源极电性连接电源电压,所述第四薄膜晶体管的漏极电性连接所述第一节点,所述第四薄膜晶体管的栅极电性连接第一控制信号;The source of the fourth thin film transistor is electrically connected to the power supply voltage, the drain of the fourth thin film transistor is electrically connected to the first node, and the gate of the fourth thin film transistor is electrically connected to the first control signal;所述第五薄膜晶体管的源极电性连接所述第二节点,所述第五薄膜晶体管的漏极电性连接所述有机发光二极管的阳极,所述第五薄膜晶体管的栅极电性连接第二控制信号;The source of the fifth thin film transistor is electrically connected to the second node, the drain of the fifth thin film transistor is electrically connected to the anode of the organic light emitting diode, and the gate of the fifth thin film transistor is electrically connected to Second control signal;所述第六薄膜晶体管的源极电性连接所述第一节点,所述第六薄膜晶体管的漏极输出复位信号,所述第六薄膜晶体管的栅极电性连接第一扫描信号;The source of the sixth thin film transistor is electrically connected to the first node, the drain of the sixth thin film transistor outputs a reset signal, and the gate of the sixth thin film transistor is electrically connected to the first scan signal;所述第一电容的一端电性连接所述电源电压,所述第一电容的另一端电性连接所述第三节点;以及One end of the first capacitor is electrically connected to the power supply voltage, and the other end of the first capacitor is electrically connected to the third node; and所述有机发光二极管的所述阳极电性连接所述第五薄膜晶体管的所述漏极,所述有机发光二极管的阴极电性连接电源负极。The anode of the organic light emitting diode is electrically connected to the drain of the fifth thin film transistor, and the cathode of the organic light emitting diode is electrically connected to the negative electrode of a power supply.
- 根据权利要求9所述的像素补偿电路,其中所述第一扫描信号、所述第二扫描信号、所述第三扫描信号、所述第一控制信号以及所述第二控制信号的组合依次对应于复位阶段、数据写入阶段以及发光阶段。9. The pixel compensation circuit according to claim 9, wherein the combination of the first scan signal, the second scan signal, the third scan signal, the first control signal, and the second control signal corresponds to In the reset phase, data writing phase and light emitting phase.
- 根据权利要求10所述的像素补偿电路,其中在所述复位阶段,所述第一扫描信号为低电平,所述第二扫描信号为高电平,所述第三扫描信号为低电平,所述第一控制信号为高电平,所述第二控制信号为低电平。11. The pixel compensation circuit according to claim 10, wherein in the reset phase, the first scan signal is at a low level, the second scan signal is at a high level, and the third scan signal is at a low level , The first control signal is at a high level, and the second control signal is at a low level.
- 根据权利要求11所述的像素补偿电路,其中在所述数据写入阶段,所述第一扫描信号为高电平,所述第二扫描信号为低电平,所述第三扫描信号为低电平,所述第一控制信号为高电平,所述第二控制信号为高电平。11. The pixel compensation circuit according to claim 11, wherein in the data writing stage, the first scan signal is at a high level, the second scan signal is at a low level, and the third scan signal is at a low level. Level, the first control signal is at a high level, and the second control signal is at a high level.
- 根据权利要求12所述的像素补偿电路,其中在所述发光阶段,所述第一扫描信号为高电平,所述第二扫描信号为高电平,所述第三扫描信号为高电平,所述第一控制信号为低电平,所述第二控制信号为低电平。11. The pixel compensation circuit according to claim 12, wherein in the light-emitting phase, the first scan signal is at a high level, the second scan signal is at a high level, and the third scan signal is at a high level , The first control signal is at a low level, and the second control signal is at a low level.
- 根据权利要求10所述的像素补偿电路,其中在所述复位阶段,所述第二薄膜晶体管、所述第五薄膜晶体管以及所述第六薄膜晶体管打开,所述第一薄膜晶体管的所述栅极点位复位成复位信号,且所述复位信号低于所述电源负极的电位。11. The pixel compensation circuit according to claim 10, wherein in the reset phase, the second thin film transistor, the fifth thin film transistor, and the sixth thin film transistor are turned on, and the gate of the first thin film transistor The pole position is reset to a reset signal, and the reset signal is lower than the potential of the negative pole of the power supply.
- 根据权利要求11所述的像素补偿电路,其中在所述数据写入阶段,所述第四薄膜晶体管、所述第五薄膜晶体管以及所述第六薄膜晶体管关闭,所述第二薄膜晶体管和所述第三薄膜晶体管打开。11. The pixel compensation circuit according to claim 11, wherein in the data writing phase, the fourth thin film transistor, the fifth thin film transistor, and the sixth thin film transistor are turned off, and the second thin film transistor and the second thin film transistor are turned off. The third thin film transistor is turned on.
- 根据权利要求12所述的像素补偿电路,其中在所述发光阶段,所述第二薄膜晶体管、所述第三薄膜晶体管以及所述第六薄膜晶体管关闭,所述第四薄膜晶体管和所述第五薄膜晶体管打开。The pixel compensation circuit according to claim 12, wherein in the light-emitting phase, the second thin film transistor, the third thin film transistor, and the sixth thin film transistor are turned off, and the fourth thin film transistor and the first thin film transistor are turned off. Five thin film transistors are turned on.
- 根据权利要求9所述的像素补偿电路,其中所述第二薄膜晶体管、所述第三薄膜晶体管以及所述第六薄膜晶体管为双沟道薄膜晶体管。9. The pixel compensation circuit according to claim 9, wherein the second thin film transistor, the third thin film transistor, and the sixth thin film transistor are dual-channel thin film transistors.
- 根据权利要求9所述的像素补偿电路,其中所述第一薄膜晶体管至第六薄膜晶体管包括非晶铟镓锌氧化物材料。9. The pixel compensation circuit according to claim 9, wherein the first to sixth thin film transistors comprise amorphous indium gallium zinc oxide material.
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8368618B2 (en) * | 2008-12-19 | 2013-02-05 | Samsung Display Co., Ltd. | Organic light emitting display device |
CN103000127A (en) * | 2011-09-13 | 2013-03-27 | 胜华科技股份有限公司 | Light-emitting element driving circuit and related pixel circuit and application thereof |
CN104751775A (en) * | 2013-12-27 | 2015-07-01 | 昆山工研院新型平板显示技术中心有限公司 | Pixel circuit with compensation function, driving method of pixel circuit and display circuit with compensation function |
CN106504703A (en) * | 2016-10-18 | 2017-03-15 | 深圳市华星光电技术有限公司 | AMOLED pixel-driving circuits and driving method |
CN107230452A (en) * | 2017-07-11 | 2017-10-03 | 深圳市华星光电半导体显示技术有限公司 | A kind of pixel-driving circuit and driving method |
CN107516488A (en) * | 2017-09-20 | 2017-12-26 | 上海天马有机发光显示技术有限公司 | A kind of image element circuit, its driving method, display panel and display device |
CN108492781A (en) * | 2018-03-30 | 2018-09-04 | 武汉华星光电半导体显示技术有限公司 | A kind of pixel-driving circuit and display device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104036724B (en) * | 2014-05-26 | 2016-11-02 | 京东方科技集团股份有限公司 | Image element circuit, the driving method of image element circuit and display device |
US10482820B2 (en) * | 2016-06-21 | 2019-11-19 | Novatek Microelectronics Corp. | Method of compensating luminance of OLED and display system using the same |
CN109523956B (en) * | 2017-09-18 | 2022-03-04 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof and display device |
CN117765880A (en) * | 2019-01-18 | 2024-03-26 | 京东方科技集团股份有限公司 | Pixel circuit, driving method, electroluminescent display panel and display device |
-
2019
- 2019-08-27 CN CN201910798682.8A patent/CN110634440B/en active Active
- 2019-11-04 WO PCT/CN2019/115240 patent/WO2021035942A1/en active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8368618B2 (en) * | 2008-12-19 | 2013-02-05 | Samsung Display Co., Ltd. | Organic light emitting display device |
CN103000127A (en) * | 2011-09-13 | 2013-03-27 | 胜华科技股份有限公司 | Light-emitting element driving circuit and related pixel circuit and application thereof |
CN104751775A (en) * | 2013-12-27 | 2015-07-01 | 昆山工研院新型平板显示技术中心有限公司 | Pixel circuit with compensation function, driving method of pixel circuit and display circuit with compensation function |
CN106504703A (en) * | 2016-10-18 | 2017-03-15 | 深圳市华星光电技术有限公司 | AMOLED pixel-driving circuits and driving method |
CN107230452A (en) * | 2017-07-11 | 2017-10-03 | 深圳市华星光电半导体显示技术有限公司 | A kind of pixel-driving circuit and driving method |
CN107516488A (en) * | 2017-09-20 | 2017-12-26 | 上海天马有机发光显示技术有限公司 | A kind of image element circuit, its driving method, display panel and display device |
CN108492781A (en) * | 2018-03-30 | 2018-09-04 | 武汉华星光电半导体显示技术有限公司 | A kind of pixel-driving circuit and display device |
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