Nothing Special   »   [go: up one dir, main page]

WO2020254143A1 - Half-bridge power assembly - Google Patents

Half-bridge power assembly Download PDF

Info

Publication number
WO2020254143A1
WO2020254143A1 PCT/EP2020/065910 EP2020065910W WO2020254143A1 WO 2020254143 A1 WO2020254143 A1 WO 2020254143A1 EP 2020065910 W EP2020065910 W EP 2020065910W WO 2020254143 A1 WO2020254143 A1 WO 2020254143A1
Authority
WO
WIPO (PCT)
Prior art keywords
power
half bridge
power assembly
bridge power
assembly according
Prior art date
Application number
PCT/EP2020/065910
Other languages
French (fr)
Inventor
Rüdiger BREDTMANN
Michael PAULU
Ole MÜHLFELD
Holger Ulrich
Original Assignee
Danfoss Silicon Power Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danfoss Silicon Power Gmbh filed Critical Danfoss Silicon Power Gmbh
Publication of WO2020254143A1 publication Critical patent/WO2020254143A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the invention covers a new approach for design and manufacturing of multi-chip automotive traction power modules, including cooling, packaging and arrangement of elements.
  • Novel hard-encapsulated semiconductor power modules with integrated baseplates comprise very high power densities, robustness and reliability.
  • known high power modules are costly to manufacture, use a substantial amount of copper, require nickel plating to prevent electro-corrosion and require three separate coolant seals for a three phase inverter.
  • the manufacturing process (and design) of power modules is separated into manufacturing sub-assemblies without a high-footprint lead frame and to integrate these subassemblies on a common baseplate in order to save space and extend the yield and manufacturing capacity of known production equipment.
  • an object of the present invention to provide a half bridge power assembly that has a smaller footprint, is lighter, requires a reduced length of sealing and is more efficient at cooling the power components of which it comprises.
  • the cooled baseplate comprises a first portion, comprising a first metal, and a second portion, comprising a second metal.
  • At least one of the power modules may be attached to the copper portion by sintering, or, in an alternative embodiment, by soldering.
  • At least one of the power modules may be attached to the first portion of the baseplate.
  • the first metal may be copper or a copper alloy
  • the second metal may be aluminium or an aluminium alloy
  • the cooled baseplate may comprise a three-dimensional structure on the side opposite to the side on which at least one of the power modules is attached.
  • the half bridge power assembly as described above may further comprise a flow cover which encloses the three-dimensional structure and which distributes coolant across the three-dimensional structure.
  • a power converter apparatus which comprises a half bridge power assembly as described above.
  • a motor vehicle comprising a power converter apparatus as described above.
  • Fig. 1 shows a subassembly comprising a ceramic substrate with a metal layer
  • Fig. 2 shows the subassembly from Fig. 1, encapsulated with a hard resin
  • Fig. 3 shows a rolled sheet metal baseplate
  • Fig. 4 shows two subassemblies of Fig. 2, firmly bonded to the
  • Fig. 5 shows a possible layout for the hollow topside contact
  • Fig. 6 shows the assembly of a control-PCB on top of the module by using press-fit pins
  • Fig. 7 shows a possible design of a leadframe
  • Fig. 8 shows an embodiment of the present invention comprising two power modules attached to a single baseplate
  • Fig. 9 shows an embodiment of the present invention comprising three power modules attached to a single baseplate
  • Fig. 10 shows a block diagram of a power converter apparatus
  • Fig. 11 shows a schematic diagram of a motor vehicle comprising a power converter described above.
  • Fig. 1 shows a subassembly comprising a ceramic substrate (DBC), consisting of a ceramic 2, such as AI 2 O 3, S1 3 N 4 or AI N, and with a metal layer 1, 3 (circuit-carrier).
  • DBC ceramic substrate
  • semiconductor components 4 for example IGBTs, reverse-conducting IGBTs, diodes or MOSFETs, are assembled by pressure sintering 6 (or soldering).
  • pressure sintering 6 or soldering
  • the use of sintering is to be recommended, since it eliminates the need for vacuum-soldering during production, uni-axial pressure sintering being used instead.
  • the top-side contact to the semiconductor component 4 is established by wire- or ribbon bonding 5.
  • external contacts of the subassembly that predominantly makes up the circuit of a half-bridge with two functional switches, are established by hollow contacts 7.
  • These hollow contacts 7 are ultrasonically welded to the substrate by a torsional welding process.
  • the subassembly is free of soft-solders and therefore can withstand later manufacturing processes that typically reach solder temperature.
  • Fig. 2 shows the subassembly from Fig. 1, being encapsulated with a hard resin 8, e.g. epoxy mold compound.
  • the manufacturing process may include a leadframe or not.
  • Two elements of the subassembly are exposed : a) the DBC / substrate 1-3 is exposed to dissipate heat and b) the hollow copper structures 7 are exposed to the top to make up receptacles for external contacting.
  • Fig. 3 shows a rolled sheet metal baseplate 10-11 substantially comprising aluminium.
  • a copper layer 10 or separate copper inlays are rolled and therefore firmly bonded to the aluminium layer.
  • the aluminium layer is pressed and forged towards a three-dimensional structure 12 to enhance cooling, utilizing either a pin-fin structure or an array of coolant distribution passages (not shown). Nickel plating not necessary.
  • Fig. 4 shows two encapsulated subassemblies 14 of Fig. 2, firmly bonded to the baseplate 10-11 described in Fig. 3.
  • the subassemblies 14 are preferably pressure-sintered 13 (or soldered) to the copper surface 10 of the baseplate
  • Fig. 5 shows a possible layout for the hollow topside contact 7.
  • two half-bridge modules 14 are assembled on a common baseplate 15.
  • a low-inductance DC path 17 is located to the top longside of the module.
  • Phase outputs 18 are located at the bottom longside of the modules.
  • Small-signal-contacts 16 are located to the left and right side of each sub-assembly.
  • Fig. 6 shows the assembly of a control-PCB 19 on top of the module by using press-fit pins 20.
  • Fig. 7 shows a possible design of a leadframe 23, 24, using pressfit structures 24 to be inserted into the hollow topside contacts.
  • one structure 23 forms the DC input contact
  • another structure 22 forms the phase output contact.
  • Fig. 8 shows that the open cooling baffle 12 can be covered by a flow- cover 25 such as a sheet metal cooling duct.
  • a flow- cover 25 such as a sheet metal cooling duct. This allows coolant to be distributed across the three-dimensional structure 12.
  • the use of a sheet metal cooling duct which completely covers the three-dimensional structure eliminates the need for extended module seals and clamps, and thus reduces the problems, such as leakage, which often occur when extended sealing lengths are required.
  • the flow cover 25 may be assembled using laser welding. Only two inlet- and outlet openings for the liquid coolant would have to be connected and sealed.
  • Fig. 9 shows an embodiment of the present invention comprising three power modules 14 attached to a single baseplate.
  • Fig. 10 shows a block diagram of a power converter apparatus 26 comprising the inventive power assembly 28 described above.
  • DC power from a battery 31 is passed via the power converter controller 27 and the half bridge power module 28 which is controls, to an electric motor 29.
  • Fig. 11 shows a schematic diagram of a motor vehicle 30 comprising a power converter 26 described above.
  • the power to the electric motor 29 is controlled by the power converter controller 27 which in turn controls the half bridge power module 28 described.
  • the electric motor 29 enables the movement of the vehicle 30.
  • PCB Printed circuit board
  • Power converter apparatus Power converter controller Half bridge power module Electric motor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

The invention comprises a half bridge power assembly comprising one or more power modules attached to a cooled baseplate, wherein at least one power module comprises a substrate on which is mounted a power semiconductor, one or more hollow top contacts, and an encapsulation which covers the power semiconductor and at least partially covers the hollow top contacts and the substrate, and wherein the cooled baseplate comprises a first portion comprising a first metal and a second portion comprising a second metal.

Description

Half-Bridge Power Assembly
The invention covers a new approach for design and manufacturing of multi-chip automotive traction power modules, including cooling, packaging and arrangement of elements.
Novel hard-encapsulated semiconductor power modules with integrated baseplates comprise very high power densities, robustness and reliability. Unfortunately, there are limits to effectively downscale the known art of half-bridge power modules towards smaller currents and circuit topology of higher integration. In addition, known high power modules are costly to manufacture, use a substantial amount of copper, require nickel plating to prevent electro-corrosion and require three separate coolant seals for a three phase inverter.
Summary of the invention
The manufacturing process (and design) of power modules is separated into manufacturing sub-assemblies without a high-footprint lead frame and to integrate these subassemblies on a common baseplate in order to save space and extend the yield and manufacturing capacity of known production equipment.
It is, thus, an object of the present invention to provide a half bridge power assembly that has a smaller footprint, is lighter, requires a reduced length of sealing and is more efficient at cooling the power components of which it comprises.
According to a first aspect of the present invention the above and other objects are fulfilled by providing a half bridge power assembly
comprising one or more power modules attached to a cooled baseplate, wherein at least one power module comprises a substrate on which is mounted a power semiconductor, one or more hollow top contacts, and an encapsulation which covers the power semiconductor and at least partially covers the hollow top contacts and the substrate, and wherein the cooled baseplate comprises a first portion, comprising a first metal, and a second portion, comprising a second metal.
At least one of the power modules may be attached to the copper portion by sintering, or, in an alternative embodiment, by soldering.
In a preferred embodiment of the invention at least one of the power modules may be attached to the first portion of the baseplate.
In a further preferred embodiment of the invention, the first metal may be copper or a copper alloy, and the second metal may be aluminium or an aluminium alloy.
The cooled baseplate may comprise a three-dimensional structure on the side opposite to the side on which at least one of the power modules is attached.
In addition, the half bridge power assembly as described above may further comprise a flow cover which encloses the three-dimensional structure and which distributes coolant across the three-dimensional structure.
According to a second aspect of the present invention the above and other objects are fulfilled by providing a power converter apparatus which comprises a half bridge power assembly as described above.
According to a third aspect of the present invention the above and other objects are fulfilled by providing a motor vehicle comprising a power converter apparatus as described above.
Description of the Drawings
The invention will become more fully understood from the detailed description given herein below. The accompanying drawings are given by way of illustration only, and thus they are not limitative of the present invention. In the accompanying drawings:
Fig. 1 shows a subassembly comprising a ceramic substrate with a metal layer;
Fig. 2 shows the subassembly from Fig. 1, encapsulated with a hard resin;
Fig. 3 shows a rolled sheet metal baseplate;
Fig. 4 shows two subassemblies of Fig. 2, firmly bonded to the
baseplate described in Fig. 3;
Fig. 5 shows a possible layout for the hollow topside contact;
Fig. 6 shows the assembly of a control-PCB on top of the module by using press-fit pins;
Fig. 7 shows a possible design of a leadframe;
Fig. 8 shows an embodiment of the present invention comprising two power modules attached to a single baseplate;
Fig. 9 shows an embodiment of the present invention comprising three power modules attached to a single baseplate;
Fig. 10 shows a block diagram of a power converter apparatus, and Fig. 11 shows a schematic diagram of a motor vehicle comprising a power converter described above.
Fig. 1 shows a subassembly comprising a ceramic substrate (DBC), consisting of a ceramic 2, such as AI2O3, S13N4 or AI N, and with a metal layer 1, 3 (circuit-carrier). On top of this substrate, semiconductor components 4, for example IGBTs, reverse-conducting IGBTs, diodes or MOSFETs, are assembled by pressure sintering 6 (or soldering). The use of sintering is to be recommended, since it eliminates the need for vacuum-soldering during production, uni-axial pressure sintering being used instead. The top-side contact to the semiconductor component 4 is established by wire- or ribbon bonding 5. Moreover, external contacts of the subassembly, that predominantly makes up the circuit of a half-bridge with two functional switches, are established by hollow contacts 7.
These hollow contacts 7 are ultrasonically welded to the substrate by a torsional welding process. In consequence, the subassembly is free of soft-solders and therefore can withstand later manufacturing processes that typically reach solder temperature.
Fig. 2 shows the subassembly from Fig. 1, being encapsulated with a hard resin 8, e.g. epoxy mold compound. The manufacturing process may include a leadframe or not. Two elements of the subassembly are exposed : a) the DBC / substrate 1-3 is exposed to dissipate heat and b) the hollow copper structures 7 are exposed to the top to make up receptacles for external contacting.
Fig. 3 shows a rolled sheet metal baseplate 10-11 substantially comprising aluminium. A copper layer 10 or separate copper inlays are rolled and therefore firmly bonded to the aluminium layer. The aluminium layer is pressed and forged towards a three-dimensional structure 12 to enhance cooling, utilizing either a pin-fin structure or an array of coolant distribution passages (not shown). Nickel plating not necessary.
Fig. 4 shows two encapsulated subassemblies 14 of Fig. 2, firmly bonded to the baseplate 10-11 described in Fig. 3. The subassemblies 14 are preferably pressure-sintered 13 (or soldered) to the copper surface 10 of the baseplate
Fig. 5 shows a possible layout for the hollow topside contact 7. In this example, two half-bridge modules 14 are assembled on a common baseplate 15. A low-inductance DC path 17 is located to the top longside of the module. Phase outputs 18 are located at the bottom longside of the modules. Small-signal-contacts 16 are located to the left and right side of each sub-assembly. Fig. 6 shows the assembly of a control-PCB 19 on top of the module by using press-fit pins 20.
Fig. 7 shows a possible design of a leadframe 23, 24, using pressfit structures 24 to be inserted into the hollow topside contacts. In this embodiment, one structure 23 forms the DC input contact, and another structure 22 forms the phase output contact.
Fig. 8 shows that the open cooling baffle 12 can be covered by a flow- cover 25 such as a sheet metal cooling duct. This allows coolant to be distributed across the three-dimensional structure 12. The use of a sheet metal cooling duct which completely covers the three-dimensional structure eliminates the need for extended module seals and clamps, and thus reduces the problems, such as leakage, which often occur when extended sealing lengths are required. The flow cover 25 may be assembled using laser welding. Only two inlet- and outlet openings for the liquid coolant would have to be connected and sealed.
Fig. 9 shows an embodiment of the present invention comprising three power modules 14 attached to a single baseplate.
Fig. 10 shows a block diagram of a power converter apparatus 26 comprising the inventive power assembly 28 described above. Here, DC power from a battery 31 is passed via the power converter controller 27 and the half bridge power module 28 which is controls, to an electric motor 29.
Fig. 11 shows a schematic diagram of a motor vehicle 30 comprising a power converter 26 described above. The power to the electric motor 29 is controlled by the power converter controller 27 which in turn controls the half bridge power module 28 described. The electric motor 29 enables the movement of the vehicle 30. Reference numbers
1-3 DBC or DBA
1, 3 Copper or other conductor
2 Ceramic, for example AI2O3, S13N4, AIN
4 Semiconductor component
5 Bondwire or bond ribbon
6 Sinter layer
7 Hollow contact, for example of Copper
8 Hard encapsulation
9 Exposed Substrate
10- 11 Baseplate
10 First metal
11 Second metal
12 Three-dimensional structure
13 Sintered connection layer
14 Molded module
15 Baseplate
16 Signal terminals
17 DC terminals
18 Phase terminals
19 Printed circuit board (PCB)
20 Pressfit pins
21 Sinter or solder joint Phase contact
DC contact
Pressfit insert
Flow cover
Power converter apparatus Power converter controller Half bridge power module Electric motor
Motor vehicle
Battery

Claims

Claims
1. A half bridge power assembly comprising one or more power modules attached to a cooled baseplate,
wherein at least one power module comprises a substrate on which is mounted a power semiconductor, one or more hollow top contacts, and an encapsulation which covers the power semiconductor and at least partially covers the hollow top contacts and the substrate, and
wherein the cooled baseplate comprises a first portion comprising a first metal and a second portion comprising a second metal.
2. A half bridge power assembly according to claim 1 wherein at least one of the power modules is attached to the copper portion by sintering.
3. A half bridge power assembly according to claim 1 wherein at least one of the power modules is attached to the copper portion by soldering.
4. A half bridge power assembly according to one of the preceding claims wherein at least one of the power modules is attached to the first portion.
5. A half bridge power assembly according to one of the preceding claims wherein the first metal is copper or a copper alloy.
6. A half bridge power assembly according to one of the preceding claims wherein the second metal is aluminium or an aluminium alloy.
7. A half bridge power assembly according to one of the preceding claims wherein the cooled baseplate comprises a three- dimensional structure on the side opposite to the side on which at least one of the power modules is attached.
8. A half bridge power assembly according to claim 7 wherein the half bridge power assembly further comprises a flow cover which encloses the three-dimensional structure and which distributes coolant across the three-dimensional structure.
9. A power converter apparatus comprising a half bridge power assembly according to one of the preceding claims.
10. A motor vehicle comprising a power converter apparatus according to claim 9.
PCT/EP2020/065910 2019-06-19 2020-06-09 Half-bridge power assembly WO2020254143A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DKPA201900742 2019-06-19
DKPA201900742 2019-06-19

Publications (1)

Publication Number Publication Date
WO2020254143A1 true WO2020254143A1 (en) 2020-12-24

Family

ID=71105446

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2020/065910 WO2020254143A1 (en) 2019-06-19 2020-06-09 Half-bridge power assembly

Country Status (1)

Country Link
WO (1) WO2020254143A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024046632A1 (en) * 2022-09-01 2024-03-07 Robert Bosch Gmbh Method for connecting a cooler module to a metal plate, and component
DE102023107033B3 (en) 2023-03-21 2024-06-13 Danfoss Silicon Power Gmbh Pressure sintering process using a deformation absorption agent and assembly manufactured thereby

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080079021A1 (en) * 2006-09-29 2008-04-03 Reinhold Bayerer Arrangement for cooling a power semiconductor module
US20080191340A1 (en) * 2007-02-12 2008-08-14 Thilo Stolze Power Semiconductor Module And Method For Its Manufacture
US20100127371A1 (en) * 2008-11-26 2010-05-27 Infineon Technologies Ag Power semiconductor module with segmented base plate
US20130062750A1 (en) * 2011-09-12 2013-03-14 Infineon Technologies Ag Semiconductor device including cladded base plate
US20190067214A1 (en) * 2017-08-24 2019-02-28 Fuji Electric Co., Ltd. Semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080079021A1 (en) * 2006-09-29 2008-04-03 Reinhold Bayerer Arrangement for cooling a power semiconductor module
US20080191340A1 (en) * 2007-02-12 2008-08-14 Thilo Stolze Power Semiconductor Module And Method For Its Manufacture
US20100127371A1 (en) * 2008-11-26 2010-05-27 Infineon Technologies Ag Power semiconductor module with segmented base plate
US20130062750A1 (en) * 2011-09-12 2013-03-14 Infineon Technologies Ag Semiconductor device including cladded base plate
US20190067214A1 (en) * 2017-08-24 2019-02-28 Fuji Electric Co., Ltd. Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024046632A1 (en) * 2022-09-01 2024-03-07 Robert Bosch Gmbh Method for connecting a cooler module to a metal plate, and component
DE102023107033B3 (en) 2023-03-21 2024-06-13 Danfoss Silicon Power Gmbh Pressure sintering process using a deformation absorption agent and assembly manufactured thereby

Similar Documents

Publication Publication Date Title
US6690087B2 (en) Power semiconductor module ceramic substrate with upper and lower plates attached to a metal base
JP6764807B2 (en) Semiconductor module
JP6979864B2 (en) Power semiconductor devices and their manufacturing methods
KR100544033B1 (en) Microelectronic component with a sandwich design
KR100735852B1 (en) Semiconductor device
US20140367736A1 (en) Semiconductor device and method for manufacturing semiconductor device
US9468087B1 (en) Power module with improved cooling and method for making
CN107924885B (en) Structure body
US20110278706A1 (en) Power Electronic Device Package
JPH11204724A (en) Power module
WO2020254143A1 (en) Half-bridge power assembly
US20070145576A1 (en) Power Semiconductor Circuit And Method Of Manufacturing A Power Semiconductor Circuit
EP1696484B1 (en) Process for assembling a double-sided circuit component
JP4051027B2 (en) Power semiconductor device module
KR20180087330A (en) Metal slug for double sided cooling of power module
JP2004235566A (en) Semiconductor device for electric power
US20170288564A1 (en) Power conversion apparatus and method for manufacturing the same
US7952204B2 (en) Semiconductor die packages with multiple integrated substrates, systems using the same, and methods using the same
US6982482B2 (en) Packaging of solid state devices
WO2021220357A1 (en) Semiconductor device
US20230027138A1 (en) Power module
US20240332141A1 (en) Semiconductor device package for press fit assembly
US20220384321A1 (en) Semiconductor module and method for fabricating the same
EP4283670A2 (en) Molded power modules
JP2564487B2 (en) Circuit board and hybrid integrated circuit thereof

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20733546

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20733546

Country of ref document: EP

Kind code of ref document: A1