WO2020078557A1 - Deposition apparatus, system and method for depositing a material on a substrate - Google Patents
Deposition apparatus, system and method for depositing a material on a substrate Download PDFInfo
- Publication number
- WO2020078557A1 WO2020078557A1 PCT/EP2018/078598 EP2018078598W WO2020078557A1 WO 2020078557 A1 WO2020078557 A1 WO 2020078557A1 EP 2018078598 W EP2018078598 W EP 2018078598W WO 2020078557 A1 WO2020078557 A1 WO 2020078557A1
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- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- deposition
- substrate segment
- segment
- transport device
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 301
- 238000000151 deposition Methods 0.000 title claims abstract description 270
- 230000008021 deposition Effects 0.000 title claims abstract description 247
- 239000000463 material Substances 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims description 49
- 238000010438 heat treatment Methods 0.000 claims abstract description 85
- 238000001816 cooling Methods 0.000 claims description 55
- 230000005855 radiation Effects 0.000 claims description 54
- 239000011248 coating agent Substances 0.000 claims description 38
- 238000000576 coating method Methods 0.000 claims description 38
- 230000001105 regulatory effect Effects 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 description 28
- 239000007789 gas Substances 0.000 description 22
- 238000012545 processing Methods 0.000 description 21
- 239000012809 cooling fluid Substances 0.000 description 13
- 238000005137 deposition process Methods 0.000 description 13
- 239000012530 fluid Substances 0.000 description 11
- 239000004020 conductor Substances 0.000 description 9
- 238000004804 winding Methods 0.000 description 9
- 238000012546 transfer Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 238000004891 communication Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000037303 wrinkles Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
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- 238000002955 isolation Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
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- 230000001360 synchronised effect Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- Embodiments of the present disclosure relate to thin- film processing apparatuses, particularly to deposition systems, and more particularly to roll-to-roll (R2R) deposition systems.
- Embodiments of the present disclosure particularly relate to a radiation device, an apparatus and method for depositing a material on a substrate.
- Processing of flexible substrates is in high demand in the packaging industry, semiconductor industries and other industries. Processing may consist of coating of a flexible substrate with a material, such as a metal, in particular aluminum, semiconductors and dielectric materials and other processing treatments conducted on a substrate for the respective applications.
- Systems performing this task generally include a processing drum, e.g., a cylindrical roller, coupled to a processing system for transporting the substrate, and on which at least a portion of the substrate is processed.
- Roll-to-roll coating systems can, thereby, provide a high throughput system.
- an evaporation process such as a thermal evaporation process
- a thermal evaporation process can be utilized for depositing thin layers of metals which can be metallized onto flexible substrates.
- Roll-to-Roll deposition systems are also experiencing a strong increase in demand in the display industry and the photovoltaic (PV) industry.
- touch panel elements, flexible displays, and flexible PV modules result in an increasing demand of depositing suitable layers in Roll-to-Roll coaters.
- such devices typically have several layers, which are typically manufactured with CVD processes and particularly also PECVD processes.
- a deposition apparatus for depositing a material on a substrate.
- the deposition apparatus includes a transport device configured to transport the substrate, one or more deposition units configured to deposit the material on the substrate, a deposition compartment, the deposition compartment including two or more edge regions, and a heating unit configured to heat the substrate exclusively at a first substrate segment and a second substrate segment with the first substrate segment and the second substrate segment facing the two or more edge regions of the deposition compartment.
- a deposition apparatus for depositing a material on a substrate.
- the deposition apparatus includes a transport device, the transport device including two transport device edge portions.
- the deposition apparatus includes one or more deposition units including one or more deposition compartments, the one or more deposition compartments including two or more edge regions.
- the deposition apparatus includes a heating unit. At least one of the group consisting of the two transport device edge portions and the two or more deposition compartment edge regions include the heating unit.
- a method for depositing a material on a substrate with a deposition apparatus includes a deposition compartment and one or more deposition units.
- the method includes exclusively heating a first substrate segment and a second substrate segment being transported by a transport device with a heating unit, the first substrate segment and the second substrate segment facing two or more edge regions of the deposition compartment.
- Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method aspect. These method aspects may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus. It includes method aspects for carrying out every function of the apparatus. BRIEF DESCRIPTION OF DRAWINGS
- FIG. 1 shows a top schematic view of a roll-to-roll deposition system for depositing or coating the thin-film according to embodiments described herein;
- FIG. 2 shows a cross section of a deposition unit according to embodiments described herein;
- FIG. 3 shows a top view of a deposition unit according to embodiments described herein;
- FIG. 4A shows a front view of a deposition apparatus according to embodiments described herein;
- FIG. 4B shows a front view of a deposition apparatus according to embodiments described herein;
- FIG. 5 shows a side view of a radiation device according to embodiments described herein.
- FIG. 6 shows a flow diagram of a method according to embodiments described herein.
- Embodiments described herein relate to a deposition apparatus for depositing a material on a substrate, the deposition apparatus including a transport device configured to transport the substrate, one or more deposition units configured to deposit the material on the substrate, a deposition compartment, the deposition compartment including two or more edge regions, and a heating unit configured to heat the substrate exclusively at a first substrate segment and a second substrate segment with the first substrate segment and the second substrate segment facing the two or more edge regions of the deposition compartment.
- a deposition apparatus for depositing a material on a substrate.
- the deposition apparatus may include a transport device provided e.g. as a coating drum.
- the substrate may be guided by the coating drum for passing a deposition compartment.
- the material may be deposited on the substrate at the deposition compartment.
- the substrate may include a first substrate segment, a second substrate segment and a third substrate segment.
- the deposition compartment may further include two or more edge regions. The edge regions may face the transport device.
- the deposition apparatus may further include a heating unit. The heating unit may heat the first substrate segment and the second substrate segment.
- a deposition apparatus for depositing a material on a substrate.
- the deposition apparatus may include a transport device, the transport device including two transport device edge portions.
- the deposition apparatus may further include one or more deposition units including one or more deposition compartments, the one or more deposition compartments including two or more deposition compartment edge regions.
- the deposition apparatus may include a heating unit. At least one of the group consisting of the two transport device edge portions and the two or more deposition compartment edge regions may include the heating unit.
- FIG. 1 shows a schematic view of a system for depositing a material on a substrate according to embodiments described herein.
- the system includes a deposition apparatus.
- the deposition apparatus may include a vacuum chamber 102 and a transport device 140 for transporting the substrate.
- the deposition apparatus may include one or more deposition units 110.
- the deposition units may be configured for depositing a material on the substrate.
- the one or more deposition units may be arranged such that the substrate is transported between the transport device 140 and the one or more deposition units 110.
- the transport device may transport the substrate along the one or more deposition units.
- a radiation device may be included in each of the one or more deposition units.
- the radiation device may be configured to allow for the deposition of material on the substrate.
- the radiation device may include a cooling device as further described below.
- the deposition apparatus may include one or more supply channels.
- the one or more supply channels may be configured for providing a material to the one or more deposition units.
- a system for the deposition of material on a substrate e.g. for depositing a thin film on the substrate includes a deposition apparatus.
- the substrate may be a flexible substrate.
- the system may include a vacuum chamber 102.
- the vacuum chamber has a first chamber portion 102 A and a second chamber portion 102B.
- a third chamber portion 102C may be configured as a winding/unwinding chamber and can be separated from the remaining portions of the chamber for exchange of the flexible substrate such that the remaining chamber portions 102A/B do not need to be vented for removing the processed flexible substrate and evacuated after the new substrate has been inserted.
- the deposition apparatus may include at least one deposition unit, in particular, the deposition apparatus may include more than two deposition units.
- a flexible substrate or web as used with the embodiments described herein can typically be characterized in that it is bendable.
- the term“web” may be synonymously used with the term“strip” or the term“flexible substrate”.
- the web as described in embodiments herein, may be a foil or another flexible substrate.
- the benefits of embodiments described herein may also be provided for non- flexible substrates or carriers of other inline-deposition systems. Yet, it is understood that particular benefit can be utilized for flexible substrates and applications for manufacturing devices on flexible substrates.
- the substrate may be provided by a supply device.
- the supply device may be a roll.
- the substrate may be provided on a first roll 764 having a shaft, which is e.g. used for unwinding in FIG. 1.
- the substrate may be received by a take-up device.
- the take-up device may be a roll.
- the supply device and/or the take-up device may be provided by holding arrangements.
- the substrate may be wound on a second roll 764’ having a shaft, which is e.g. used for winding in FIG. 1.
- the substrate can also be guided through the system in reverse direction such that the shafts can be used for winding instead of unwinding and for unwinding instead of winding.
- the unwinding shaft for supporting the flexible substrate to be processed and the winding shaft supporting the flexible substrate having the processed thin film thereon are provided in the third chamber portion 102C.
- the substrate 106 that may be flexible, may be provided on a first roll 764, e.g. having a winding shaft.
- the substrate may be guided via one, two or more rollers from the first roll 764 to the coating drum and from the coating drum to the second roll 764’, e.g. having a winding shaft, on which the substrate is wound after processing thereof.
- a transport device 140 e.g. coating drum 142 having a rotation axis 111 may be provided in the apparatus.
- the coating drum 142 may have a curved outer surface for guiding and/or transporting the substrate along the curved outer surface.
- the substrate may be guided through a first vacuum processing region, e.g. of the upper most deposition unit 110 in FIG. 1, and at least one second vacuum processing region, e.g. of the second upper most deposition unit 110 in FIG. 1.
- the embodiment depicted in FIG. 1 includes five deposition units 110, such as five deposition sources.
- the deposition sources are provided in processing regions, wherein the substrate being transported by the coating drum may be processed in the respective areas.
- two or more deposition units e.g. deposition stations can be provided.
- four, five, six, or even more deposition units, e.g. deposition stations can be provided.
- the processing regions may be separated from adjacent processing regions or further areas by gas separation units.
- a first portion of the coating drum i.e. an area of the cross-section of the coating drum perpendicular to the rotation axis
- the remaining portion of the coating drum i.e. an area of the cross-section of the coating drum perpendicular to the rotation axis
- the first chamber portion 102A may have a convex shape wall portion.
- Convex is to be understood as either having a curved surface of the wall portion or having a plurality of flat surfaces adjacent to each other in order to provide for a convex shape of the plurality of surfaces.
- the plurality of flat surfaces forming together the convex shape has the advantage that the below- mentioned vacuum flange connections can be provided at a flat surface, which is easier to manufacture.
- a first deposition unit corresponds to the first processing region and at a second deposition unit corresponds to the second vacuum processing region.
- at least two deposition units include a flange portion for providing a vacuum connection to the first chamber portion 102A.
- the first chamber portion may have a convex shaped wall portion as described above, and at least two openings essentially parallel thereto, for example the at least two openings are provided within the convex shaped wall portion or in a protrusion extending from the convex shaped wall portion, i.e. an extension of the convex shaped wall portion protruding essentially radially outward with respect to the coating drum axis.
- the at least two deposition units may be configured to be received in the at least two openings of the first chamber portion.
- the flange portions may provide a vacuum tight connection with the convex shaped wall portion of the first chamber portion or with the protrusion extending from the convex shaped wall portion. It is however to be understood that the flange portions may also be provided for the other deposition units shown in FIG.1.
- the deposition units can be inserted from outside of the convex shaped wall portion of the first chamber portion 102A.
- a vacuum flange can be connected on insertion.
- a vacuum region may be provided in the first chamber portion.
- the deposition units can be inserted in the openings along an essential radial direction with respect to the axis of the coating drum 142.
- a portion of the deposition units 110 may be provided in vacuum, i.e. within the first chamber portion and/or inside with respect to the flange. Another portion of the deposition units may be provided outside of the region in which the vacuum in the vacuum chamber 102 is provided.
- the deposition units can easily be exchanged and supply of consumption media like cooling fluid, gas, electric power etc. can easily be provided.
- a connection of the deposition unit to further elements like power supplies, gas supplies, pump devices, vacuum pumps and the like is provided outside the first chamber portion 102A and, may form the above-mentioned another portion outside of the region.
- FIG. 1 shows a deposition apparatus 105.
- the deposition apparatus 105 may include a vacuum chamber 102, which can be provided such that the vacuum can be generated in the chamber.
- Various vacuum processing techniques, and particularly vacuum deposition techniques can be used to process the substrate or to deposit the thin- film on the substrate.
- the deposition apparatus 105 may be a roll-to-roll deposition apparatus, bearing a substrate 106 that may be flexible, being guided and processed.
- the substrate 106 that may be flexible may be guided in FIG. 1, as indicated by arrow 8, from the second chamber portion 102B to the first chamber portion 102A having the deposition units therein.
- the vacuum chamber 102 may further include a third chamber portion 102C which may be configured as a winding/unwinding chamber.
- the vacuum chamber 102 may include windings e.g. rolls for providing the substrate.
- the flexible substrate may be directed by rollers to the transport device, e.g. the coating drum 142 which is configured for guiding and/or transporting the substrate during processing and/or deposition.
- the substrate may be transported in a transport direction indicated by arrow 8. It is to be understood that the substrate may also be transported in the reverse direction indicated by arrow 8. From the coating drum 142, the substrate 106 may be guided back into the second chamber portion 102B and the third chamber portion, respectively.
- the third chamber portion may include an unwinder for supplying the substrate.
- the substrate may then be guided via rollers towards the transport device, e.g. the coating drum 142.
- the substrate may be guided via the curved surface of the coating drum 142.
- the coating drum may transport the substrate along the processing regions for allowing the deposition of particles on the substrate.
- the substrate may be transported between the curved surface of the coating drum and the respective deposition unit.
- the substrate may be guided through a slit between the coating drum and the deposition unit.
- the coating drum 142 may transport the substrate back to the third chamber portion via rollers to a winder to receive the processed substrate.
- the winder and the unwinder may be rolls.
- the winder and/or the unwinder may be removably arranged in the third chamber portion.
- Ultra high barrier stacks or flexible TFT devices are e.g. composed of a series of layers, which are e.g. deposited with PECVD or PVD processes or combinations thereof. Because of the high demands on the quality of the different films it is common use to deposit the single films in specially designed systems for each single film. To bring down costs and make the applications commercially available, it is an improvement to combine the deposition of at least sets or combinations of films in one single coater. According to embodiments described herein, a modular concept which allows for the combination of several process modules is provided.
- flexible ultra high barriers for OLED display and/or lighting, flex solar, or other electronic devices with the need for protection from an adjacent environment can be provided.
- this can include the deposition of etch stop, gate dielectric, channel, source gate and drain electrodes for flexible TFT.
- the second chamber portion 102B may be inclined with respect to a vertical or horizontal orientation of the third chamber portion (not shown).
- the angle of inclination can be 20° to 70° relative to vertical.
- the inclination may be such that the coating drum is displaced downwardly as compared to a horizontal arrangement of the similar components without inclination.
- the inclination of the second chamber portion 102B allows for providing additional deposition units to be provided such that the axis (see lines 1 shown in FIG. 1), e.g. the symmetry axis of the deposition units, is at the same height above or below the axis of the coating drum 142. As shown in FIG.
- FIG. 2 shows a cross section of a deposition unit according to embodiments described herein.
- the deposition unit 110 may include a housing 112.
- the deposition unit 110 may include an inner shielding, e.g. a pump shielding.
- the inner shielding may line the housing for limiting a deposition chamber within the housing.
- the deposition unit further may include a deposition opening 126.
- the deposition opening 126 may extend e.g. in between the inner shielding. In other words, the deposition opening 126 may have the same dimensions as the deposition chamber. According to embodiments, the deposition opening may be narrower than the dimension of the deposition chamber.
- the deposition unit may include a temperature regulation 118.
- the temperature regulation 118 may be configured to cool the deposition unit i.e. the housing 112 of the deposition unit.
- the temperature regulation may further be configured to cool the inner shielding.
- cooling channels may be included in the housing 112. A cooling fluid may be transported through the cooling channels for enabling a heat transfer between the deposition chamber and the cooling fluid.
- the deposition unit may include one or more supply channels 130.
- the one or more supply channels may include one or more gas supply lines.
- the deposition unit may include two supply channels 130.
- the deposition unit may include a radiation device 200.
- the one or more supply channels 130 may be arranged in an upper section of the deposition unit.
- the one or more supply channels may be in fluid communication with supply arrangements e.g. gas tanks.
- supply arrangements e.g. gas tanks.
- one gas supply line may be in fluid communication with one supply arrangement and the second gas supply line may be in fluid communication with a second supply arrangement.
- the one or more supply channels may be arranged in the same horizontal plane of the deposition unit.
- the one or more supply channels 130 may extend in a direction perpendicular to the paper plane of FIG. 2.
- a plurality of openings may be arranged to allow for a material to enter the deposition unit i.e. the deposition chamber.
- the openings may provide e.g. gas to the deposition chamber.
- the openings may be provided as nozzles.
- the deposition unit may include a radiation device 200.
- the radiation device may be arranged in a central position e.g. in a lower section of the deposition unit 110.
- the radiation device may be arranged between two supply channels.
- the radiation device may be arranged in a plane different from the plane of the supply channels.
- the plane of the radiation device may be below the plane of the supply channels in a vertical direction.
- the radiation device may be arranged such that radiation energy may be provided in the direction of the one or more supply channels.
- the transport device 140 may be arranged at the upper section of the deposition unit. It is to be understood that the terms “upper” and“lower” relate to the orientation of the deposition unit shown in FIG. 2.
- the deposition unit may be arranged at different angles of the transport device as shown with respect to FIG. 1.
- the transport device 140 may provide the substrate at the deposition opening 126. For example, a movement of the transport device may provide the substrate along the deposition opening 126. The movement of transport device may provide the substrate at a constant velocity or the movement of the transport device may be started and stopped several times.
- the transport device may be a coating drum 142.
- the deposition unit may include a gas separation unit 122.
- the gas separation unit may be configured for separating the first vacuum processing region and at least one second vacuum processing region and may be adapted to form a slit through which the substrate can pass between the outer surface of the substrate support and the gas separation unit.
- the gas separation unit may be adapted to control fluid communication between the first processing region and the second processing region. The fluid communication may be controlled by adjusting the position, e.g. the radial position, of the gas separation unit.
- an actuator of a gas separation unit 122 for providing the radial position can be selected from the group consisting of an electrical motor, a pneumatic actuator such as a pneumatic cylinder, a linear drive, and a hydraulic actuator such as a hydraulic cylinder.
- the deposition opening 126 may allow for material to reach the substrate. In other words, the deposition opening may allow the material to be deposited on the substrate transported by the transport device.
- deposition may be understood as any process which allows for the transfer of (solid) particles on a substrate.
- the material to be deposited may be sputtered on a substrate.
- the material is released from a target (e.g. in conjunction with generating a plasma) and is deposited on the substrate.
- a target e.g. in conjunction with generating a plasma
- sputtering is related to a generation of exceeding high thermal energy.
- the material to be deposited may be evaporated by applying high temperatures to the respective material to transfer the material into the gaseous phase. The evaporated particles may then settle on the (cooler) substrate.
- a sputtering process or an evaporation process is carried out, high amounts of thermal energy are generated during the process.
- processes carried out in the deposition apparatus are not limited to sputtering and evaporation but may also include other deposition processes for depositing a material on a substrate.
- the deposition unit may be a reaction chamber.
- a vacuum may be applied to the deposition unit.
- the reaction chamber may enable a PECVD process, a CVD process, a PCD process or combinations thereof.
- a chemical reaction may take place in the deposition unit or deposition chamber.
- the supply channels may guide a gas, in particular a reactive gas, into the deposition chamber.
- a gas in particular a reactive gas
- two different types of gas may be provided.
- a chemical reaction may take place resulting in the deposition of particles on the substrate.
- a support gas and a feedstock gas may be provided.
- FIG. 3 shows a top view of a deposition unit according to embodiments described herein.
- the deposition unit may include a deposition compartment 120.
- the deposition compartment may include two or more edge regions 124.
- the two or more edge regions 124 may be considered as upper side limitations of the deposition compartment i.e. the deposition chamber.
- the one or more edge regions may form a frame surrounding the deposition chamber.
- the two or more edge regions 124 may be arranged at the short side of the deposition compartment.
- the one or more edge regions may be defined by the dimensions of the deposition compartment.
- the deposition compartment may have a substantially rectangular shape.
- the deposition compartment may have two parallel long sides and two parallel short sides. Accordingly, the long sides may be extended in length in comparison to the short sides.
- the two or more edge regions may be arranged at the long sides and/or the short sides of the deposition compartment.
- the deposition compartment may include one or more supply channels 130 and optionally a radiation device 200.
- the deposition compartment may include at least two edge regions 124, particularly, the deposition compartment may include four edge regions 124.
- the deposition apparatus may include a heating unit 300.
- the heating unit 300 may be arranged at the deposition compartment, e.g. at the two or more edge regions 124 shown in FIG. 3.
- the heating unit 300 may be configured for heating the substrate exclusively at a first substrate segment and a second substrate segment with the first substrate segment and the second substrate segment facing the two or more edge regions 124 of the deposition compartment.
- the term“exclusively heating” as used herein may be understood as a directed heating of the segments of the substrate.
- the term may be understood as a direct heating of the first substrate segment and/or the second substrate segment.
- the heating unit may be configured such that heat may reach the first substrate segment and/or the second substrate segment without reaching the third substrate segment. However, some of the heat provided by the heating unit may be carried over to the third substrate segment, the heat carried over being as little as 20% of the provided heat, particularly 10% of the provided heat, more particularly 5% of the provided heat.
- the heating unit 300 may be arranged at the two or more edge regions 124.
- the heating unit may be provided at at least one of the two or more edge regions of the deposition compartment. More particularly, the heating units may be provided at two of the two or more edge regions.
- the heating unit may be provided at the short sides of the deposition compartment. For example, the heating unit may be attached to the two or more edge regions.
- the heating unit may include one or more heating devices 325.
- the one or more heating devices 325 may be arranged with the two or more edge regions. In particular, each of the two or more edge regions may include one of the one or more heating devices 325.
- the two or more edge regions on the long side of the deposition compartment may include one heating device each. Additionally or alternatively, more than one heating device may be arranged at the two or more edge regions.
- the one or more heating devices may be selected from the group consisting of ceramic inlays, radiation heaters, resistive heaters or combinations thereof.
- the heating unit may be configured to locally heat the substrate 106.
- the heating unit i.e. the one or more heating devices may be configured such that a part of the substrate is heated. This part may be arranged with the two or more edge regions.
- the part of the substrate may be a substrate segment.
- the substrate may be considered to include several substrate segments.
- the substrate 106 may include three substrate segments.
- the substrate may include a first substrate segment 107, a second substrate segment 108 and/or a third substrate segment 109.
- Present embodiments may provide for the possibility to heat only specific segments of the substrate.
- the heating unit i.e. the one or more heating devices may be configured to heat the substrate and/or substrate segments by heat radiation.
- the temperature of the heating unit may be altered.
- FIG. 4A shows a front view of a deposition apparatus according to embodiments described herein.
- a transport device 140 may be arranged with the deposition compartment 120.
- the transport device may be a coating drum 142.
- the substrate 106 may be guided by the transport device i.e. the coating drum.
- the transport device i.e. the coating drum may be arranged such that material to be deposited may reach the substrate 106.
- the transport device may be arranged above the deposition compartment. It is to be understood that the direction“above the deposition compartment” relates to the depiction in FIG.4 A but may also be understood as the transport device and the deposition compartment being arranged in proximity to each other.
- the dimensions of the transport device 140 may exceed the dimensions of the deposition opening 126.
- the substrate 106 may be guided by the transport device.
- the substrate 106 may extend along the transport device parallel to the rotation axis 111 of the transport device.
- the deposition opening 126 of the deposition compartment may be arranged such that a segment of the substrate receives the material to be deposited.
- the substrate 106 may include one or more substrate segments.
- the substrate 106 may include three substrate segments.
- the substrate may include a first substrate segment 107, a second substrate segment 108 and/or a third substrate segment 109.
- the first substrate segment 107 and the second substrate segment 108 may be defined as parts of the substrate which are kept free from the material to be deposited.
- the first substrate segment 107 and the second substrate segment 108 may be arranged with the two or more edge regions of the deposition compartment 120.
- the first substrate segment and the second substrate segment may be the parts of the substrate exceeding the dimensions of the deposition opening.
- the third substrate segment may be defined by a part of the substrate arranged with the deposition opening.
- the third substrate segment is the part of the substrate receiving the material to be deposited.
- the third substrate segment 109 may be arranged between the first substrate segment 107 and the second substrate segment 108.
- the transport device 140 may include two transport device edge portions 144.
- the transport device edge portions 144 may be arranged at the side boundaries of the transport device 140 e.g. at the side boundaries of the coating drum 142.
- a first transport device edge portion may be arranged with the first substrate segment 107.
- a second transport device edge portion may be arranged with the second substrate segment 108.
- the first transport device edge portion and the second transport device edge portion may be arranged with the two or more edge regions of the deposition compartment 120.
- the first transport device edge portion and the second transport device edge portion may be parts of the transport device exceeding the dimensions of the deposition opening.
- the heating unit 300 may be provided adjacent to the first substrate segment 107 and/or the second substrate segment 108.
- the heating unit 300 may be provided at the transport device in regions corresponding to the first substrate segment and/or the second substrate segment.
- the heating unit 300 may include one or more heating devices.
- the heating unit may be configured to heat the substrate 106.
- the heating unit may be configured to heat the first substrate segment 107 and/or the second substrate segment 108.
- the heating unit may include one or more heating devices e.g. resistive heaters.
- the heating unit may be provided at the transport device 140.
- the heating unit may be arranged within the coating drum 142.
- the heating device may be arranged such that the first substrate segment 107 and/or the second substrate segment 108 exclusively receive heat from the heating unit i.e. the one or more heating devices.
- the one or more heating devices may be placed at segments of the coating drum that correspond to the first substrate segment 107 and/or to the second substrate segment 108.
- the heating unit may be provided at the two transport device edge portions 144, i.e. the heating unit may be provided at the first transport device edge portion and/or the second transport device edge portion.
- the two transport device edge portions may transfer the heat from the heating unit to the substrate transported by the transport device.
- the first transport device edge region may transfer the heat from the heating unit to the first substrate segment and/or the second transport device edge region may transfer the heat from the heating unit to the second substrate segment. Consequently, the first substrate segment and/or the second substrate segment may be exclusively heated by the heating unit via the first transport device edge portion and/or the second transport device edge portion.
- the heating unit is configured to compensate for a temperature difference at the substrate.
- a temperature difference may occur due to higher temperatures applied to the deposition process.
- the third substrate segment may receive the highest process temperatures by being arranged with the deposition opening.
- the first substrate segment and/or the second substrate segment may receive less of the process temperature since the first substrate segment and the second substrate segment are in no direct contact with the deposition opening. In other words, the first substrate segment and the second substrate segment remain cooler in comparison to the third substrate segment during the deposition process when no heat is provided to the first substrate segment and/or the second substrate segment.
- heating of the first substrate segment and the second substrate segment with the heating unit may lead to uniform distribution of temperature at the substrate.
- the temperature difference may damage the substrate e.g. folds and/or wrinkles may be generated, particularly on the side of the substrate.
- Heating of the first substrate segment and the second substrate segment may prevent or avoid the formation of folds and/or wrinkles on the substrate.
- a uniform distribution of the material to be deposited may be ensured.
- guidance of the substrate with the transport device may be facilitated since the prevention of folds and/or wrinkles prevents the substrate from getting stuck in the deposition apparatus.
- FIG. 4B shows a front view of a deposition apparatus according to embodiments described herein.
- the transport device may include a cooling apparatus 450.
- the cooling apparatus 450 may be arranged within the transport device i.e. the coating drum 142.
- the cooling apparatus 450 may be configured to cool the substrate.
- the cooling apparatus may be arranged such that the third substrate segment 109 may be cooled.
- the third substrate segment may be arranged with the deposition opening 126.
- the cooling apparatus 450 may be provided between the two transport device edge portions 144.
- the cooling apparatus may be arranged at a portion of the transport device being in between the two transport device edge portions 144.
- the cooling apparatus 450 may be configured to cool the substrate segment being arranged with the portion of the transport device being in between the two transport device edge portions 144. Consequently, the transport device may include the heating unit at the two transport device edge portions and a cooling apparatus at the transport device portion in between the two transport device edge portions.
- the third substrate segment 109 may be provided with a first temperature.
- the first substrate segment 107 and the second substrate segment 108 may be provided with a second temperature.
- the first substrate segment and the second substrate segment may include a temperature and the third substrate segment 109 may include another temperature.
- a third temperature of the substrate may be generated.
- the third temperature may be understood as a uniform temperature of the substrate resulting from the first temperature and the second temperature.
- the third temperature may be understood as a temperature that is homogenously distributed over the substrate.
- the first temperature and the second temperature may also be equal.
- the cooling apparatus may be configured to provide a temperature to the substrate 106.
- the cooling apparatus may provide the first temperature to the third substrate segment 109. Cooling of the third substrate segment may be beneficial because the third substrate segment may receive heat generated by the deposition process. For example, power is supplied to the deposition compartment for carrying out the deposition process thus energy is provided to the deposition apparatus which may generate heat during the process.
- the material to be deposited may be provided at high temperatures for ensuring a high quality deposition of particles. These high temperatures may be compensated for by cooling the substrate i.e. the third substrate segment which is the part of the substrate receiving the material to be deposited.
- the cooling apparatus 450 may include cooling channels.
- the cooling channels may be cooling tubes.
- the cooling tubes may be provided with a cooling fluid.
- the cooling fluid may be provided with a temperature below the process temperature.
- the deposition apparatus may include a controller for controlling the temperature of the cooling apparatus.
- the heating unit may be configured to heat the first substrate segment and the second substrate segment to a temperature substantially equal to a temperature of the third substrate segment.
- the cooling apparatus may be configured to cool the third substrate segment to a first temperature and the heating unit may be configured to heat the first substrate segment and the second substrate segment to a second temperature such that the first substrate segment and the second substrate segment have the same temperature as the third substrate segment.
- the first temperature and the second temperature may be synchronized to result in a temperature uniformly spread over the substrate.
- the temperature of the substrate may be finely adjusted. By regulating the temperature of different parts or segments of the substrate, the overall temperature of the substrate may be adjusted more accurately and more precisely. This allows for an improved regulation of the deposition process while minimizing adverse effects.
- FIG. 5 shows a side view of a radiation device according to embodiments described herein.
- the deposition apparatus may include a radiation device 200.
- the radiation device 200 may have an axis 2.
- the radiation device 200 may include a hollow body 250.
- the hollow body 250 may extend in a length direction of the radiation device along the axis 2.
- the radiation device may include a cylindrical shape.
- the length of the radiation device along the axis 2 may be adapted to the dimensions of the deposition unit.
- the radiation device may be connected to a power source e.g. the hollow body may be connected to a power source.
- the radiation device may include a coaxial connector.
- the radiation device may include an outer tube 255.
- the outer tube surrounds the hollow body 250.
- the outer tube 255 may extend along the axis 2 of the radiation device.
- the length of the outer tube 255 along the axis 2 may be similar to the length of the hollow body.
- the outer tube may be configured as a vacuum isolation.
- the outer tube may be a quartz tube. Quartz is the material of choice to allow the radiation waves i.e. microwaves to pass the outer tube without being absorbed or with little of the microwaves being absorbed.
- the radiation device may include a cooling device 246.
- the cooling device 246 may be arranged within the hollow body 250.
- the cooling device may extend in a length direction along the axis 2 of the radiation device.
- the cooling device may line an inner area of the hollow body 250.
- the cooling device is configured to cool the hollow body. Cooling of the hollow body may include a heat transfer between the hollow body and the cooling device.
- the cooling device 246 may include one or more cooling channels for guiding a cooling fluid therethrough.
- the cooling channels may include an entry fluid port 242 and an exit fluid port 244.
- the entry fluid port 242 may be arranged on one end region of the radiation device and the exit fluid port 244 may be arranged on a second end region of the radiation device.
- the cooling fluid may enter the cooling device through the entry fluid port.
- the cooling fluid may exit the cooling device through the exit fluid port.
- the cooling fluid may allow for heat exchange between the radiation device and the cooling fluid. By flowing through the cooling channels, the cooling fluid may transport the heat generated by the radiation device away from the radiation device.
- the hollow body 250 may include a conductor.
- the conductor may be provided with power at a first power port and/or a second power port.
- the conductor may be made from copper (Cu) or from any other metal suitable for the application of providing radiation energy.
- the power source may provide energy to the conductor.
- High-frequency radiation waves may be generated at the conductor. For example, microwaves are generated.
- the radiation waves may generate a plasma around the radiation device.
- energy is provided to the conductor.
- the conductor heats up due to the energy provided, the energy increasing the temperature of the radiation device. This may lead to an increase in temperature in the deposition unit i.e. the deposition chamber. Such an increase in temperature may not only disturb the deposition process but may also damage the components involved in the deposition process, e.g. the conductor.
- the radiation device i.e. the microwave antenna generates heat by providing radiation energy to the deposition process.
- the cooling device may provide cooling of the microwave antenna.
- the temperature inside the deposition chamber may be regulated.
- the cooling device counteracts the generated heat of the microwave antenna. Damage and/or alterations of the substrate can be avoided. For example, folding of the substrate can be avoided and/or prevented. This allows for a more uniform deposition of particles on the substrate. Furthermore, a degradation of the reacting species may be prevented and/or avoided.
- the uniformity of the plasma generated at the radiation device may be increased. Further advantageously, the radiation device and/or the conductor may be protected from damage due to overheating.
- cooling of the radiation device and heating of the first substrate segment and the second substrate segment may be combined.
- the radiation device may be cooled to adjust the process temperature in the deposition compartment and the first substrate segment and the second substrate segment may be heated to further counteract adverse effects of high process temperatures. Synergistic positive effects may be provided to the deposition apparatus and/or the deposition process.
- a coordinated thermal management of the deposition apparatus can be provided. Firstly, the process temperature e.g. the temperature in the deposition compartment can be regulated such that the temperature is high enough for the deposition process to work disturbance-free while being low enough to avoid damage of process components.
- the temperature of the substrate can be finely adjusted to further avoid damage which reduces or even prevents rejects and thus, lowers production costs.
- the combination of the temperature regulation of the radiation device and the temperature regulation of the substrate i.e. the first substrate segment and the second substrate segment may further allow for an even more precise and more accurate fine regulation of the substrate temperature i.e. the third temperature mentioned above.
- the deposition process may be improved and may be made more efficient.
- the deposition apparatus may include a controller.
- the controller may be configured to regulate the temperature of the deposition apparatus.
- the controller is configured to regulate the temperature of the radiation device, to regulate the temperature of the gas cooling device and/or to regulate the temperature of the heating unit.
- the controller may for example be set to different temperature values to provide the temperatures to the radiation device, the gas cooling device and the heating unit, respectively.
- FIG. 6 shows a flow diagram of a method 600 for depositing a material on a substrate according to embodiments described herein.
- the deposition apparatus includes one or more deposition units and a deposition compartment.
- Box 660 includes exclusively heating a first substrate segment and a second substrate segment being transported by a transport device with a heating unit, the first substrate segment and the second substrate segment facing two or more edge regions of the deposition compartment.
- the transport device may include a cooling apparatus.
- a first temperature is provided at the cooling apparatus to cool a third substrate segment.
- the third substrate segment may be arranged between a first substrate segment and a second substrate segment.
- the cooling apparatus may e.g. be the cooling apparatus described with respect to FIG. 4B.
- a second temperature is provided at the heating unit to exclusively heat the first substrate segment and the second substrate segment.
- the second temperature may be adjusted so that the first substrate segment and the second substrate segment may have a temperature that is equal to the temperature of the third substrate segment.
- the first temperature and the second temperature may be combined in a third temperature that is homogenously distributed at the first substrate segment, the second substrate segment and the third substrate segment.
- the substrate may be prevented from folding and/or wrinkling.
- the method may further include regulating the first temperature and the second temperature to a value in a range between 0 to 200 °C, particularly 20 to 160 °C.
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Abstract
A deposition apparatus (105) for depositing a material on a substrate (106) is provided. The deposition apparatus includes a transport device (140) for transporting the substrate (106), one or more deposition units (110) for depositing the material on the substrate (106), a deposition compartment (120), the deposition compartment comprising two or more edge regions (124), and a heating unit (300) configured for heating the substrate (106). The heating unit (300) is configured for heating the substrate (106) exclusively at a first substrat e segment (107) and a second substrate segment (108) with the first substrate segment and the second substrate segment facing the two or more edge regions (124) of the deposition compartment (120).
Description
DEPOSITION APPARATUS, SYSTEM AND METHOD FOR DEPOSITING A
MATERIAL ON A SUBSTRATE
FIELD OF INVENTION
[0001] Embodiments of the present disclosure relate to thin- film processing apparatuses, particularly to deposition systems, and more particularly to roll-to-roll (R2R) deposition systems. Embodiments of the present disclosure particularly relate to a radiation device, an apparatus and method for depositing a material on a substrate.
BACKGROUND
[0002] Processing of flexible substrates, such as plastic films or foils, is in high demand in the packaging industry, semiconductor industries and other industries. Processing may consist of coating of a flexible substrate with a material, such as a metal, in particular aluminum, semiconductors and dielectric materials and other processing treatments conducted on a substrate for the respective applications. Systems performing this task generally include a processing drum, e.g., a cylindrical roller, coupled to a processing system for transporting the substrate, and on which at least a portion of the substrate is processed. Roll-to-roll coating systems can, thereby, provide a high throughput system.
[0003] Typically, an evaporation process, such as a thermal evaporation process, can be utilized for depositing thin layers of metals which can be metallized onto flexible substrates. However, Roll-to-Roll deposition systems are also experiencing a strong increase in demand in the display industry and the photovoltaic (PV) industry. For example, touch panel elements, flexible displays, and flexible PV modules result in an increasing demand of depositing suitable layers in Roll-to-Roll coaters. However, such devices typically have several layers, which are typically manufactured with CVD processes and particularly also PECVD processes.
[0004] For the optimal deposition of materials onto substrates the process parameters of the different thermal evaporation processes need to be adjusted accordingly. Especially the thermal management of the processes plays a role in achieving high quality depositions of
materials. Thereby, not only the overall thermal management of the processes needs to be improved but also the thermal regulation of several components influencing the processes.
SUMMARY
[0005] In light of the above and according to an aspect, a deposition apparatus for depositing a material on a substrate is provided. The deposition apparatus includes a transport device configured to transport the substrate, one or more deposition units configured to deposit the material on the substrate, a deposition compartment, the deposition compartment including two or more edge regions, and a heating unit configured to heat the substrate exclusively at a first substrate segment and a second substrate segment with the first substrate segment and the second substrate segment facing the two or more edge regions of the deposition compartment.
[0006] According to a further aspect, a deposition apparatus for depositing a material on a substrate is provided. The deposition apparatus includes a transport device, the transport device including two transport device edge portions. The deposition apparatus includes one or more deposition units including one or more deposition compartments, the one or more deposition compartments including two or more edge regions. The deposition apparatus includes a heating unit. At least one of the group consisting of the two transport device edge portions and the two or more deposition compartment edge regions include the heating unit.
[0007] According to a further aspect, a method for depositing a material on a substrate with a deposition apparatus is provided. The deposition apparatus includes a deposition compartment and one or more deposition units. The method includes exclusively heating a first substrate segment and a second substrate segment being transported by a transport device with a heating unit, the first substrate segment and the second substrate segment facing two or more edge regions of the deposition compartment.
[0008] Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method aspect. These method aspects may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus. It includes method aspects for carrying out every function of the apparatus.
BRIEF DESCRIPTION OF DRAWINGS
[0009] So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the invention and are described in the following:
FIG. 1 shows a top schematic view of a roll-to-roll deposition system for depositing or coating the thin-film according to embodiments described herein;
FIG. 2 shows a cross section of a deposition unit according to embodiments described herein;
FIG. 3 shows a top view of a deposition unit according to embodiments described herein;
FIG. 4A shows a front view of a deposition apparatus according to embodiments described herein;
FIG. 4B shows a front view of a deposition apparatus according to embodiments described herein;
FIG. 5 shows a side view of a radiation device according to embodiments described herein; and
FIG. 6 shows a flow diagram of a method according to embodiments described herein.
DETAILED DESCRIPTION
[0010] Reference will now be made in detail to the various embodiments of the invention, one or more examples of which are illustrated in the figures. Within the following description of the drawings, the same reference numbers refer to same components. Generally, only the differences with respect to individual embodiments are described. Each example is provided
by way of explanation of the invention and is not meant as a limitation of the invention. Further, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the description includes such modifications and variations.
[0011] Embodiments described herein relate to a deposition apparatus for depositing a material on a substrate, the deposition apparatus including a transport device configured to transport the substrate, one or more deposition units configured to deposit the material on the substrate, a deposition compartment, the deposition compartment including two or more edge regions, and a heating unit configured to heat the substrate exclusively at a first substrate segment and a second substrate segment with the first substrate segment and the second substrate segment facing the two or more edge regions of the deposition compartment.
[0012] According to embodiments described herein, a deposition apparatus for depositing a material on a substrate is provided. The deposition apparatus may include a transport device provided e.g. as a coating drum. The substrate may be guided by the coating drum for passing a deposition compartment. The material may be deposited on the substrate at the deposition compartment. The substrate may include a first substrate segment, a second substrate segment and a third substrate segment. The deposition compartment may further include two or more edge regions. The edge regions may face the transport device. The deposition apparatus may further include a heating unit. The heating unit may heat the first substrate segment and the second substrate segment.
[0013] According to yet further embodiments, a deposition apparatus for depositing a material on a substrate is provided. The deposition apparatus may include a transport device, the transport device including two transport device edge portions. The deposition apparatus may further include one or more deposition units including one or more deposition compartments, the one or more deposition compartments including two or more deposition compartment edge regions. The deposition apparatus may include a heating unit. At least one of the group consisting of the two transport device edge portions and the two or more deposition compartment edge regions may include the heating unit.
[0014] FIG. 1 shows a schematic view of a system for depositing a material on a substrate according to embodiments described herein. The system includes a deposition apparatus. The deposition apparatus may include a vacuum chamber 102 and a transport device 140 for
transporting the substrate. The deposition apparatus may include one or more deposition units 110. The deposition units may be configured for depositing a material on the substrate. The one or more deposition units may be arranged such that the substrate is transported between the transport device 140 and the one or more deposition units 110.
[0015] According to embodiments described herein, the transport device may transport the substrate along the one or more deposition units. In each of the one or more deposition units, a radiation device may be included. The radiation device may be configured to allow for the deposition of material on the substrate. The radiation device may include a cooling device as further described below. The deposition apparatus may include one or more supply channels. The one or more supply channels may be configured for providing a material to the one or more deposition units.
[0016] According to embodiments described herein, a system for the deposition of material on a substrate e.g. for depositing a thin film on the substrate is provided. The system includes a deposition apparatus. The substrate may be a flexible substrate. As exemplarily shown in FIG. 1, the system may include a vacuum chamber 102. The vacuum chamber has a first chamber portion 102 A and a second chamber portion 102B. A third chamber portion 102C may be configured as a winding/unwinding chamber and can be separated from the remaining portions of the chamber for exchange of the flexible substrate such that the remaining chamber portions 102A/B do not need to be vented for removing the processed flexible substrate and evacuated after the new substrate has been inserted. For example the downtime of the system can be reduced. The system, i.e. the deposition apparatus may include at least one deposition unit, in particular, the deposition apparatus may include more than two deposition units.
[0017] It is noted here that a flexible substrate or web as used with the embodiments described herein can typically be characterized in that it is bendable. The term“web” may be synonymously used with the term“strip” or the term“flexible substrate”. For example, the web, as described in embodiments herein, may be a foil or another flexible substrate. However, as described in more detail below, the benefits of embodiments described herein may also be provided for non- flexible substrates or carriers of other inline-deposition systems. Yet, it is understood that particular benefit can be utilized for flexible substrates and applications for manufacturing devices on flexible substrates.
[0018] The substrate may be provided by a supply device. The supply device may be a roll. The substrate may be provided on a first roll 764 having a shaft, which is e.g. used for unwinding in FIG. 1. The substrate may be received by a take-up device. The take-up device may be a roll. The supply device and/or the take-up device may be provided by holding arrangements. The substrate may be wound on a second roll 764’ having a shaft, which is e.g. used for winding in FIG. 1. However, it is to be understood that the substrate can also be guided through the system in reverse direction such that the shafts can be used for winding instead of unwinding and for unwinding instead of winding. Accordingly, the unwinding shaft for supporting the flexible substrate to be processed and the winding shaft supporting the flexible substrate having the processed thin film thereon are provided in the third chamber portion 102C. The substrate 106 that may be flexible, may be provided on a first roll 764, e.g. having a winding shaft. According to embodiments, the substrate may be guided via one, two or more rollers from the first roll 764 to the coating drum and from the coating drum to the second roll 764’, e.g. having a winding shaft, on which the substrate is wound after processing thereof.
[0019] According to embodiments and as shown in FIG. 1, a transport device 140 e.g. coating drum 142 having a rotation axis 111 may be provided in the apparatus. The coating drum 142 may have a curved outer surface for guiding and/or transporting the substrate along the curved outer surface. The substrate may be guided through a first vacuum processing region, e.g. of the upper most deposition unit 110 in FIG. 1, and at least one second vacuum processing region, e.g. of the second upper most deposition unit 110 in FIG. 1.
[0020] The embodiment depicted in FIG. 1 includes five deposition units 110, such as five deposition sources. The deposition sources are provided in processing regions, wherein the substrate being transported by the coating drum may be processed in the respective areas. Yet, it is to be understood that according to yet further embodiments, which can be combined with other embodiments described herein, two or more deposition units, e.g. deposition stations can be provided. For example, four, five, six, or even more deposition units, e.g. deposition stations can be provided. The processing regions may be separated from adjacent processing regions or further areas by gas separation units.
[0021] According to embodiments described herein, a first portion of the coating drum, i.e. an area of the cross-section of the coating drum perpendicular to the rotation axis, may be provided in the second chamber portion 102B and the remaining portion of the coating drum,
i.e. an area of the cross-section of the coating drum perpendicular to the rotation axis, may be provided in the first chamber portion 102A.
[0022] According to embodiments described herein, the first chamber portion 102A may have a convex shape wall portion. Convex is to be understood as either having a curved surface of the wall portion or having a plurality of flat surfaces adjacent to each other in order to provide for a convex shape of the plurality of surfaces. According to embodiments, the plurality of flat surfaces forming together the convex shape has the advantage that the below- mentioned vacuum flange connections can be provided at a flat surface, which is easier to manufacture.
[0023] Exemplarily relating to two of the five deposition units 110 shown in FIG. 1, a first deposition unit corresponds to the first processing region and at a second deposition unit corresponds to the second vacuum processing region. According to embodiments described herein, at least two deposition units are provided, wherein at least two deposition units include a flange portion for providing a vacuum connection to the first chamber portion 102A. For example, the first chamber portion may have a convex shaped wall portion as described above, and at least two openings essentially parallel thereto, for example the at least two openings are provided within the convex shaped wall portion or in a protrusion extending from the convex shaped wall portion, i.e. an extension of the convex shaped wall portion protruding essentially radially outward with respect to the coating drum axis.
[0024] According to embodiments, the at least two deposition units may be configured to be received in the at least two openings of the first chamber portion. The flange portions may provide a vacuum tight connection with the convex shaped wall portion of the first chamber portion or with the protrusion extending from the convex shaped wall portion. It is however to be understood that the flange portions may also be provided for the other deposition units shown in FIG.1.
[0025] Accordingly, the deposition units can be inserted from outside of the convex shaped wall portion of the first chamber portion 102A. On insertion, a vacuum flange can be connected. A vacuum region may be provided in the first chamber portion. According to embodiments, the deposition units can be inserted in the openings along an essential radial direction with respect to the axis of the coating drum 142.
[0026] As described above, a portion of the deposition units 110 may be provided in vacuum, i.e. within the first chamber portion and/or inside with respect to the flange. Another portion of the deposition units may be provided outside of the region in which the vacuum in the vacuum chamber 102 is provided. The deposition units can easily be exchanged and supply of consumption media like cooling fluid, gas, electric power etc. can easily be provided. For example, a connection of the deposition unit to further elements like power supplies, gas supplies, pump devices, vacuum pumps and the like is provided outside the first chamber portion 102A and, may form the above-mentioned another portion outside of the region.
[0027] As described above, FIG. 1 shows a deposition apparatus 105. The deposition apparatus 105 may include a vacuum chamber 102, which can be provided such that the vacuum can be generated in the chamber. Various vacuum processing techniques, and particularly vacuum deposition techniques, can be used to process the substrate or to deposit the thin- film on the substrate. As shown in FIG. 1, and as referred to herein, the deposition apparatus 105 may be a roll-to-roll deposition apparatus, bearing a substrate 106 that may be flexible, being guided and processed. The substrate 106 that may be flexible, may be guided in FIG. 1, as indicated by arrow 8, from the second chamber portion 102B to the first chamber portion 102A having the deposition units therein.
[0028] As mentioned above, according to embodiments, the vacuum chamber 102 may further include a third chamber portion 102C which may be configured as a winding/unwinding chamber. The vacuum chamber 102 may include windings e.g. rolls for providing the substrate. The flexible substrate may be directed by rollers to the transport device, e.g. the coating drum 142 which is configured for guiding and/or transporting the substrate during processing and/or deposition. The substrate may be transported in a transport direction indicated by arrow 8. It is to be understood that the substrate may also be transported in the reverse direction indicated by arrow 8. From the coating drum 142, the substrate 106 may be guided back into the second chamber portion 102B and the third chamber portion, respectively.
[0029] According to embodiments described herein, the third chamber portion may include an unwinder for supplying the substrate. The substrate may then be guided via rollers towards the transport device, e.g. the coating drum 142. The substrate may be guided via the curved surface of the coating drum 142. The coating drum may transport the substrate along the
processing regions for allowing the deposition of particles on the substrate. The substrate may be transported between the curved surface of the coating drum and the respective deposition unit. For example, the substrate may be guided through a slit between the coating drum and the deposition unit. The coating drum 142 may transport the substrate back to the third chamber portion via rollers to a winder to receive the processed substrate. The winder and the unwinder may be rolls. The winder and/or the unwinder may be removably arranged in the third chamber portion.
[0030] According to yet further embodiments for operating and using deposition apparatuses as described herein, deposition of layers or a stack of layers for ultra high barrier stacks or flexible TFT devices can be provided. Ultra high barrier stacks or flexible TFT devices are e.g. composed of a series of layers, which are e.g. deposited with PECVD or PVD processes or combinations thereof. Because of the high demands on the quality of the different films it is common use to deposit the single films in specially designed systems for each single film. To bring down costs and make the applications commercially available, it is an improvement to combine the deposition of at least sets or combinations of films in one single coater. According to embodiments described herein, a modular concept which allows for the combination of several process modules is provided. In light of the above, according to some embodiments described herein, flexible ultra high barriers for OLED display and/or lighting, flex solar, or other electronic devices with the need for protection from an adjacent environment can be provided. For example, this can include the deposition of etch stop, gate dielectric, channel, source gate and drain electrodes for flexible TFT.
[0031] As further indicated in FIG. 1, the second chamber portion 102B may be inclined with respect to a vertical or horizontal orientation of the third chamber portion (not shown). The angle of inclination can be 20° to 70° relative to vertical. The inclination may be such that the coating drum is displaced downwardly as compared to a horizontal arrangement of the similar components without inclination. The inclination of the second chamber portion 102B allows for providing additional deposition units to be provided such that the axis (see lines 1 shown in FIG. 1), e.g. the symmetry axis of the deposition units, is at the same height above or below the axis of the coating drum 142. As shown in FIG. 1, the five deposition units are provided above or at the height of the rotation axis of the coating drum or below. Flaking and falling of generated particles on the substrate can be reduced or omitted.
[0032] FIG. 2 shows a cross section of a deposition unit according to embodiments described herein. The deposition unit 110 may include a housing 112. The deposition unit 110 may include an inner shielding, e.g. a pump shielding. The inner shielding may line the housing for limiting a deposition chamber within the housing. The deposition unit further may include a deposition opening 126. The deposition opening 126 may extend e.g. in between the inner shielding. In other words, the deposition opening 126 may have the same dimensions as the deposition chamber. According to embodiments, the deposition opening may be narrower than the dimension of the deposition chamber.
[0033] According to embodiments described herein, the deposition unit may include a temperature regulation 118. The temperature regulation 118 may be configured to cool the deposition unit i.e. the housing 112 of the deposition unit. The temperature regulation may further be configured to cool the inner shielding. For example, cooling channels may be included in the housing 112. A cooling fluid may be transported through the cooling channels for enabling a heat transfer between the deposition chamber and the cooling fluid.
[0034] The deposition unit may include one or more supply channels 130. The one or more supply channels may include one or more gas supply lines. Particularly, the deposition unit may include two supply channels 130. The deposition unit may include a radiation device 200.
[0035] According to embodiments described herein, the one or more supply channels 130 may be arranged in an upper section of the deposition unit. The one or more supply channels may be in fluid communication with supply arrangements e.g. gas tanks. For example, when two gas supply lines are provided, one gas supply line may be in fluid communication with one supply arrangement and the second gas supply line may be in fluid communication with a second supply arrangement. As shown in FIG. 2, the one or more supply channels may be arranged in the same horizontal plane of the deposition unit.
[0036] The one or more supply channels 130 may extend in a direction perpendicular to the paper plane of FIG. 2. Along the one or more supply channels 130, a plurality of openings may be arranged to allow for a material to enter the deposition unit i.e. the deposition chamber. The openings may provide e.g. gas to the deposition chamber. The openings may be provided as nozzles.
[0037] According to embodiments described herein, the deposition unit may include a radiation device 200. The radiation device may be arranged in a central position e.g. in a lower section of the deposition unit 110. For example, the radiation device may be arranged between two supply channels. The radiation device may be arranged in a plane different from the plane of the supply channels. For example, the plane of the radiation device may be below the plane of the supply channels in a vertical direction. Additionally or alternatively, the radiation device may be arranged such that radiation energy may be provided in the direction of the one or more supply channels.
[0038] According to embodiments described herein, the transport device 140 may be arranged at the upper section of the deposition unit. It is to be understood that the terms “upper” and“lower” relate to the orientation of the deposition unit shown in FIG. 2. The deposition unit may be arranged at different angles of the transport device as shown with respect to FIG. 1. The transport device 140 may provide the substrate at the deposition opening 126. For example, a movement of the transport device may provide the substrate along the deposition opening 126. The movement of transport device may provide the substrate at a constant velocity or the movement of the transport device may be started and stopped several times. The transport device may be a coating drum 142.
[0039] According to embodiments described herein, the deposition unit may include a gas separation unit 122. The gas separation unit may be configured for separating the first vacuum processing region and at least one second vacuum processing region and may be adapted to form a slit through which the substrate can pass between the outer surface of the substrate support and the gas separation unit. The gas separation unit may be adapted to control fluid communication between the first processing region and the second processing region. The fluid communication may be controlled by adjusting the position, e.g. the radial position, of the gas separation unit.
[0040] According to different embodiments, which can be combined with other embodiments described herein, an actuator of a gas separation unit 122 for providing the radial position can be selected from the group consisting of an electrical motor, a pneumatic actuator such as a pneumatic cylinder, a linear drive, and a hydraulic actuator such as a hydraulic cylinder.
[0041] According to embodiments described herein, the deposition opening 126 may allow for material to reach the substrate. In other words, the deposition opening may allow the material to be deposited on the substrate transported by the transport device.
[0042] According to embodiments described herein, several deposition processes may be performed. The term“deposition” as used herein, may be understood as any process which allows for the transfer of (solid) particles on a substrate. For example, the material to be deposited may be sputtered on a substrate. The material is released from a target (e.g. in conjunction with generating a plasma) and is deposited on the substrate. Typically, sputtering is related to a generation of exceeding high thermal energy. Furthermore, the material to be deposited may be evaporated by applying high temperatures to the respective material to transfer the material into the gaseous phase. The evaporated particles may then settle on the (cooler) substrate. Regardless of whether a sputtering process or an evaporation process is carried out, high amounts of thermal energy are generated during the process. The person skilled may understand that processes carried out in the deposition apparatus are not limited to sputtering and evaporation but may also include other deposition processes for depositing a material on a substrate.
[0043] According to embodiments described herein, the deposition unit may be a reaction chamber. A vacuum may be applied to the deposition unit. The reaction chamber may enable a PECVD process, a CVD process, a PCD process or combinations thereof. For example, a chemical reaction may take place in the deposition unit or deposition chamber. The supply channels may guide a gas, in particular a reactive gas, into the deposition chamber. For example, two different types of gas may be provided. A chemical reaction may take place resulting in the deposition of particles on the substrate. For example, a support gas and a feedstock gas may be provided.
[0044] FIG. 3 shows a top view of a deposition unit according to embodiments described herein. The deposition unit may include a deposition compartment 120. The deposition compartment may include two or more edge regions 124. The two or more edge regions 124 may be considered as upper side limitations of the deposition compartment i.e. the deposition chamber. The one or more edge regions may form a frame surrounding the deposition chamber. For example, the two or more edge regions 124 may be arranged at the short side of the deposition compartment.
[0045] According to embodiments described herein, the one or more edge regions may be defined by the dimensions of the deposition compartment. Considering a two dimensional shape, the deposition compartment may have a substantially rectangular shape. The deposition compartment may have two parallel long sides and two parallel short sides. Accordingly, the long sides may be extended in length in comparison to the short sides. The two or more edge regions may be arranged at the long sides and/or the short sides of the deposition compartment.
[0046] As exemplarily shown in FIG. 3, the deposition compartment may include one or more supply channels 130 and optionally a radiation device 200. The deposition compartment may include at least two edge regions 124, particularly, the deposition compartment may include four edge regions 124.
[0047] According to embodiments described herein, the deposition apparatus may include a heating unit 300. The heating unit 300 may be arranged at the deposition compartment, e.g. at the two or more edge regions 124 shown in FIG. 3. The heating unit 300 may be configured for heating the substrate exclusively at a first substrate segment and a second substrate segment with the first substrate segment and the second substrate segment facing the two or more edge regions 124 of the deposition compartment.
[0048] The term“exclusively heating” as used herein may be understood as a directed heating of the segments of the substrate. In particular, the term may be understood as a direct heating of the first substrate segment and/or the second substrate segment. The heating unit may be configured such that heat may reach the first substrate segment and/or the second substrate segment without reaching the third substrate segment. However, some of the heat provided by the heating unit may be carried over to the third substrate segment, the heat carried over being as little as 20% of the provided heat, particularly 10% of the provided heat, more particularly 5% of the provided heat.
[0049] According to embodiments described herein, the heating unit 300 may be arranged at the two or more edge regions 124. The heating unit may be provided at at least one of the two or more edge regions of the deposition compartment. More particularly, the heating units may be provided at two of the two or more edge regions. The heating unit may be provided at the short sides of the deposition compartment. For example, the heating unit may be attached to the two or more edge regions.
[0050] According to embodiments described herein, the heating unit may include one or more heating devices 325. The one or more heating devices 325 may be arranged with the two or more edge regions. In particular, each of the two or more edge regions may include one of the one or more heating devices 325. More particularly, the two or more edge regions on the long side of the deposition compartment may include one heating device each. Additionally or alternatively, more than one heating device may be arranged at the two or more edge regions. The one or more heating devices may be selected from the group consisting of ceramic inlays, radiation heaters, resistive heaters or combinations thereof.
[0051] According to embodiments described herein, the heating unit may be configured to locally heat the substrate 106. For example, the heating unit i.e. the one or more heating devices may be configured such that a part of the substrate is heated. This part may be arranged with the two or more edge regions. The part of the substrate may be a substrate segment.
[0052] The substrate may be considered to include several substrate segments. In particular, the substrate 106 may include three substrate segments. The substrate may include a first substrate segment 107, a second substrate segment 108 and/or a third substrate segment 109. Present embodiments may provide for the possibility to heat only specific segments of the substrate.
[0053] For example, the heating unit i.e. the one or more heating devices may be configured to heat the substrate and/or substrate segments by heat radiation. By adjusting the temperature of the heating unit to a certain value, the temperature of the substrate and/or of the substrate segments may be altered.
[0054] FIG. 4A shows a front view of a deposition apparatus according to embodiments described herein. A transport device 140 may be arranged with the deposition compartment 120. The transport device may be a coating drum 142. The substrate 106 may be guided by the transport device i.e. the coating drum. The transport device i.e. the coating drum may be arranged such that material to be deposited may reach the substrate 106. As exemplary shown in FIG.4A, the transport device may be arranged above the deposition compartment. It is to be understood that the direction“above the deposition compartment” relates to the depiction in FIG.4 A but may also be understood as the transport device and the deposition compartment being arranged in proximity to each other.
[0055] According to embodiments described herein, the dimensions of the transport device 140 may exceed the dimensions of the deposition opening 126. The substrate 106 may be guided by the transport device. The substrate 106 may extend along the transport device parallel to the rotation axis 111 of the transport device. Thus, the dimensions of the substrate 106 may exceed the dimensions of the deposition opening. The deposition opening 126 of the deposition compartment may be arranged such that a segment of the substrate receives the material to be deposited.
[0056] According to embodiments described herein, the substrate 106 may include one or more substrate segments. In particular, the substrate 106 may include three substrate segments. The substrate may include a first substrate segment 107, a second substrate segment 108 and/or a third substrate segment 109. The first substrate segment 107 and the second substrate segment 108 may be defined as parts of the substrate which are kept free from the material to be deposited. For example, the first substrate segment 107 and the second substrate segment 108 may be arranged with the two or more edge regions of the deposition compartment 120. In other words, the first substrate segment and the second substrate segment may be the parts of the substrate exceeding the dimensions of the deposition opening. The third substrate segment may be defined by a part of the substrate arranged with the deposition opening. In other words, the third substrate segment is the part of the substrate receiving the material to be deposited. The third substrate segment 109 may be arranged between the first substrate segment 107 and the second substrate segment 108.
[0057] According to embodiments described herein, the transport device 140 may include two transport device edge portions 144. The transport device edge portions 144 may be arranged at the side boundaries of the transport device 140 e.g. at the side boundaries of the coating drum 142. For example, a first transport device edge portion may be arranged with the first substrate segment 107. A second transport device edge portion may be arranged with the second substrate segment 108. The first transport device edge portion and the second transport device edge portion may be arranged with the two or more edge regions of the deposition compartment 120. In other words, the first transport device edge portion and the second transport device edge portion may be parts of the transport device exceeding the dimensions of the deposition opening.
[0058] According to embodiments which can be combined with any other embodiment described herein, the heating unit 300 may be provided adjacent to the first substrate
segment 107 and/or the second substrate segment 108. For example, the heating unit 300 may be provided at the transport device in regions corresponding to the first substrate segment and/or the second substrate segment. The heating unit 300 may include one or more heating devices. The heating unit may be configured to heat the substrate 106. Particularly, the heating unit may be configured to heat the first substrate segment 107 and/or the second substrate segment 108. For example, the heating unit may include one or more heating devices e.g. resistive heaters.
[0059] According to embodiments described herein, the heating unit may be provided at the transport device 140. For example, the heating unit may be arranged within the coating drum 142. The heating device may be arranged such that the first substrate segment 107 and/or the second substrate segment 108 exclusively receive heat from the heating unit i.e. the one or more heating devices. For example, the one or more heating devices may be placed at segments of the coating drum that correspond to the first substrate segment 107 and/or to the second substrate segment 108.
[0060] For example, the heating unit may be provided at the two transport device edge portions 144, i.e. the heating unit may be provided at the first transport device edge portion and/or the second transport device edge portion. The two transport device edge portions may transfer the heat from the heating unit to the substrate transported by the transport device. For example, the first transport device edge region may transfer the heat from the heating unit to the first substrate segment and/or the second transport device edge region may transfer the heat from the heating unit to the second substrate segment. Consequently, the first substrate segment and/or the second substrate segment may be exclusively heated by the heating unit via the first transport device edge portion and/or the second transport device edge portion.
[0061] Advantageously, the heating unit is configured to compensate for a temperature difference at the substrate. A temperature difference may occur due to higher temperatures applied to the deposition process. The third substrate segment may receive the highest process temperatures by being arranged with the deposition opening. The first substrate segment and/or the second substrate segment may receive less of the process temperature since the first substrate segment and the second substrate segment are in no direct contact with the deposition opening. In other words, the first substrate segment and the second substrate segment remain cooler in comparison to the third substrate segment during the deposition
process when no heat is provided to the first substrate segment and/or the second substrate segment.
[0062] Further advantageously, heating of the first substrate segment and the second substrate segment with the heating unit may lead to uniform distribution of temperature at the substrate. The temperature difference may damage the substrate e.g. folds and/or wrinkles may be generated, particularly on the side of the substrate. Heating of the first substrate segment and the second substrate segment may prevent or avoid the formation of folds and/or wrinkles on the substrate. Thus, a uniform distribution of the material to be deposited may be ensured. Further, guidance of the substrate with the transport device may be facilitated since the prevention of folds and/or wrinkles prevents the substrate from getting stuck in the deposition apparatus.
[0063] FIG. 4B shows a front view of a deposition apparatus according to embodiments described herein. As shown in FIG. 4B the transport device may include a cooling apparatus 450. The cooling apparatus 450 may be arranged within the transport device i.e. the coating drum 142. The cooling apparatus 450 may be configured to cool the substrate. Particularly, the cooling apparatus may be arranged such that the third substrate segment 109 may be cooled. The third substrate segment may be arranged with the deposition opening 126.
[0064] According to embodiments described herein, the cooling apparatus 450 may be provided between the two transport device edge portions 144. For example, the cooling apparatus may be arranged at a portion of the transport device being in between the two transport device edge portions 144. The cooling apparatus 450 may be configured to cool the substrate segment being arranged with the portion of the transport device being in between the two transport device edge portions 144. Consequently, the transport device may include the heating unit at the two transport device edge portions and a cooling apparatus at the transport device portion in between the two transport device edge portions.
[0065] According to embodiments described herein, the third substrate segment 109 may be provided with a first temperature. The first substrate segment 107 and the second substrate segment 108 may be provided with a second temperature. In other words, the first substrate segment and the second substrate segment may include a temperature and the third substrate segment 109 may include another temperature. By providing different temperatures to the first, second and third substrate segments, a third temperature of the substrate may be
generated. The third temperature may be understood as a uniform temperature of the substrate resulting from the first temperature and the second temperature. In other words, the third temperature may be understood as a temperature that is homogenously distributed over the substrate. The person skilled in the art will understand that the first temperature and the second temperature may also be equal.
[0066] According to embodiments described herein, the cooling apparatus may be configured to provide a temperature to the substrate 106. In particular, the cooling apparatus may provide the first temperature to the third substrate segment 109. Cooling of the third substrate segment may be beneficial because the third substrate segment may receive heat generated by the deposition process. For example, power is supplied to the deposition compartment for carrying out the deposition process thus energy is provided to the deposition apparatus which may generate heat during the process. Further, the material to be deposited may be provided at high temperatures for ensuring a high quality deposition of particles. These high temperatures may be compensated for by cooling the substrate i.e. the third substrate segment which is the part of the substrate receiving the material to be deposited.
[0067] According to embodiments described herein, the cooling apparatus 450 may include cooling channels. The cooling channels may be cooling tubes. The cooling tubes may be provided with a cooling fluid. By providing a cooling fluid to the cooling tubes, a heat transfer from the transport device and/or the substrate to the cooling tubes, i.e. the cooling fluid, may be enabled. The cooling fluid may be provided with a temperature below the process temperature. The deposition apparatus may include a controller for controlling the temperature of the cooling apparatus.
[0068] According to embodiments described herein, the heating unit may be configured to heat the first substrate segment and the second substrate segment to a temperature substantially equal to a temperature of the third substrate segment. In particular, the cooling apparatus may be configured to cool the third substrate segment to a first temperature and the heating unit may be configured to heat the first substrate segment and the second substrate segment to a second temperature such that the first substrate segment and the second substrate segment have the same temperature as the third substrate segment. In other words, the first temperature and the second temperature may be synchronized to result in a temperature uniformly spread over the substrate.
[0069] Advantageously, the temperature of the substrate may be finely adjusted. By regulating the temperature of different parts or segments of the substrate, the overall temperature of the substrate may be adjusted more accurately and more precisely. This allows for an improved regulation of the deposition process while minimizing adverse effects.
[0070] FIG. 5 shows a side view of a radiation device according to embodiments described herein. The deposition apparatus may include a radiation device 200. The radiation device 200 may have an axis 2. The radiation device 200 may include a hollow body 250. The hollow body 250 may extend in a length direction of the radiation device along the axis 2. The radiation device may include a cylindrical shape. The length of the radiation device along the axis 2 may be adapted to the dimensions of the deposition unit. The radiation device may be connected to a power source e.g. the hollow body may be connected to a power source. The radiation device may include a coaxial connector.
[0071] The radiation device may include an outer tube 255. The outer tube surrounds the hollow body 250. The outer tube 255 may extend along the axis 2 of the radiation device. The length of the outer tube 255 along the axis 2 may be similar to the length of the hollow body. The outer tube may be configured as a vacuum isolation. The outer tube may be a quartz tube. Quartz is the material of choice to allow the radiation waves i.e. microwaves to pass the outer tube without being absorbed or with little of the microwaves being absorbed.
[0072] The radiation device may include a cooling device 246. The cooling device 246 may be arranged within the hollow body 250. The cooling device may extend in a length direction along the axis 2 of the radiation device. The cooling device may line an inner area of the hollow body 250. The cooling device is configured to cool the hollow body. Cooling of the hollow body may include a heat transfer between the hollow body and the cooling device.
[0073] According to embodiments described herein, the cooling device 246 may include one or more cooling channels for guiding a cooling fluid therethrough. The cooling channels may include an entry fluid port 242 and an exit fluid port 244. The entry fluid port 242 may be arranged on one end region of the radiation device and the exit fluid port 244 may be arranged on a second end region of the radiation device. The cooling fluid may enter the cooling device through the entry fluid port. The cooling fluid may exit the cooling device through the exit fluid port. The cooling fluid may allow for heat exchange between the radiation device
and the cooling fluid. By flowing through the cooling channels, the cooling fluid may transport the heat generated by the radiation device away from the radiation device.
[0074] The hollow body 250 may include a conductor. The conductor may be provided with power at a first power port and/or a second power port. The conductor may be made from copper (Cu) or from any other metal suitable for the application of providing radiation energy. The power source may provide energy to the conductor. High-frequency radiation waves may be generated at the conductor. For example, microwaves are generated. The radiation waves may generate a plasma around the radiation device.
[0075] For example, energy is provided to the conductor. The conductor heats up due to the energy provided, the energy increasing the temperature of the radiation device. This may lead to an increase in temperature in the deposition unit i.e. the deposition chamber. Such an increase in temperature may not only disturb the deposition process but may also damage the components involved in the deposition process, e.g. the conductor.
[0076] Generally, the radiation device i.e. the microwave antenna generates heat by providing radiation energy to the deposition process. Advantageously, the cooling device may provide cooling of the microwave antenna. Thus, the temperature inside the deposition chamber may be regulated. Further, the cooling device counteracts the generated heat of the microwave antenna. Damage and/or alterations of the substrate can be avoided. For example, folding of the substrate can be avoided and/or prevented. This allows for a more uniform deposition of particles on the substrate. Furthermore, a degradation of the reacting species may be prevented and/or avoided. Furthermore, by cooling the radiation device, the uniformity of the plasma generated at the radiation device may be increased. Further advantageously, the radiation device and/or the conductor may be protected from damage due to overheating.
[0077] According to embodiments described herein, cooling of the radiation device and heating of the first substrate segment and the second substrate segment may be combined. For example, the radiation device may be cooled to adjust the process temperature in the deposition compartment and the first substrate segment and the second substrate segment may be heated to further counteract adverse effects of high process temperatures. Synergistic positive effects may be provided to the deposition apparatus and/or the deposition process.
[0078] Advantageously, a coordinated thermal management of the deposition apparatus can be provided. Firstly, the process temperature e.g. the temperature in the deposition compartment can be regulated such that the temperature is high enough for the deposition process to work disturbance-free while being low enough to avoid damage of process components. Secondly, the temperature of the substrate can be finely adjusted to further avoid damage which reduces or even prevents rejects and thus, lowers production costs. The combination of the temperature regulation of the radiation device and the temperature regulation of the substrate i.e. the first substrate segment and the second substrate segment may further allow for an even more precise and more accurate fine regulation of the substrate temperature i.e. the third temperature mentioned above. The deposition process may be improved and may be made more efficient.
[0079] According to embodiments that can be combined with any other embodiment described herein, the deposition apparatus may include a controller. The controller may be configured to regulate the temperature of the deposition apparatus. For example, the controller is configured to regulate the temperature of the radiation device, to regulate the temperature of the gas cooling device and/or to regulate the temperature of the heating unit. The controller may for example be set to different temperature values to provide the temperatures to the radiation device, the gas cooling device and the heating unit, respectively.
[0080] FIG. 6 shows a flow diagram of a method 600 for depositing a material on a substrate according to embodiments described herein. The deposition apparatus includes one or more deposition units and a deposition compartment. Box 660 includes exclusively heating a first substrate segment and a second substrate segment being transported by a transport device with a heating unit, the first substrate segment and the second substrate segment facing two or more edge regions of the deposition compartment.
[0081] According to embodiments, the transport device may include a cooling apparatus. In box 670, a first temperature is provided at the cooling apparatus to cool a third substrate segment. For example, the third substrate segment may be arranged between a first substrate segment and a second substrate segment. The cooling apparatus may e.g. be the cooling apparatus described with respect to FIG. 4B.
[0082] In box 680, a second temperature is provided at the heating unit to exclusively heat the first substrate segment and the second substrate segment. The second temperature may be
adjusted so that the first substrate segment and the second substrate segment may have a temperature that is equal to the temperature of the third substrate segment.
[0083] In box 690, the first temperature and the second temperature may be combined in a third temperature that is homogenously distributed at the first substrate segment, the second substrate segment and the third substrate segment. Thus, the substrate may be prevented from folding and/or wrinkling. The method may further include regulating the first temperature and the second temperature to a value in a range between 0 to 200 °C, particularly 20 to 160 °C.
Claims
1. Deposition apparatus (105) for depositing a material on a substrate (106), the deposition apparatus comprising:
a transport device (140) configured to transport the substrate (106);
one or more deposition units (110) configured to deposit the material on the substrate
(106);
a deposition compartment (120), the deposition compartment comprising two or more edge regions (124); and
a heating unit (300) configured to heat the substrate (106) exclusively at a first substrate segment (107) and a second substrate segment (108) with the first substrate segment and the second substrate segment facing the two or more edge regions (124) of the deposition compartment (120).
2. The deposition apparatus (105) according to claim 1, wherein the transport device (140) comprises a coating drum (142), the coating drum comprising a cooling apparatus (450) for cooling a third substrate segment (109).
3. The deposition apparatus (105) according to claim 2, wherein the cooling apparatus (450) is arranged within the coating drum (142).
4. The deposition apparatus (105) according to claims 2 or 3, wherein the heating unit (300) is configured to heat the first substrate segment (107) and the second substrate segment (108) to a temperature substantially equal to a temperature of the third substrate segment (109).
5. The deposition apparatus (105) according to any of the preceding claims, wherein the heating unit (300) is provided at at least one of the two or more edge regions (124) of the deposition compartment (120).
6. The deposition apparatus (105) according to any of the preceding claims, wherein the heating unit (300) is provided at the transport device (140).
7. The deposition apparatus (105) according to any of the preceding claims, wherein the heating unit (300) comprises a heating device (325) selected from the group consisting of: ceramic inlays, radiation heaters, resistive heaters or combinations thereof
8. The deposition apparatus (105) according to any of the preceding claims, the deposition apparatus further comprising a radiation device (200).
9. The deposition apparatus (105) according to claim 8, wherein the radiation device (200) further comprises a cooling device (246), the cooling device being arranged within the radiation device.
10. The deposition apparatus (105) according to any of the preceding claims, wherein the deposition apparatus further comprises a vacuum chamber (102).
11. The deposition apparatus (105) according to claim 10, the deposition apparatus further comprising:
One or more vacuum pumps;
one or more holding arrangements to provide a supply device and/or a take-up device; and
one or more deposition apparatuses (105) according to any of claims 1 to 10.
12. Deposition apparatus (105) for depositing a material on a substrate (106), the deposition apparatus comprising:
a transport device (140), the transport device comprising two transport device edge portions (144);
one or more deposition units (110) comprising one or more deposition compartments (120), the one or more deposition compartments comprising two or more edge regions (124); and
a heating unit (300), at least one of the group consisting of the two transport device edge portions (144) and the two or more deposition compartment edge regions comprising the heating unit (300).
13. Method (600) for depositing a material on a substrate (106) with a deposition apparatus (105), the deposition apparatus comprising one or more deposition units (110) and a deposition compartment (120), the method comprising: exclusively heating a first substrate segment (107) and a second substrate segment (108) being transported by a transport device (140) with a heating unit (300), the first substrate segment and the second substrate segment facing two or more edge regions (124) of the deposition compartment (120).
14. The method (600) according to claim 13, the transport device (140) comprising a cooling apparatus (450), the method further comprising:
providing a first temperature at the cooling apparatus to cool a third substrate segment (109);
providing a second temperature at the heating unit (300) to exclusively heat the first substrate segment (107) and the second substrate segment (108); and
combining the first temperature and the second temperature in a third temperature that is homogenously distributed at the first substrate segment (107), the second substrate segment (108) and the third substrate segment (109).
15. The method (600) according to claim 14, the method further comprising:
regulating the first temperature and the second temperature to a value in a range between 0 to 200 °C, particularly 20 to 160 °C.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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PCT/EP2018/078598 WO2020078557A1 (en) | 2018-10-18 | 2018-10-18 | Deposition apparatus, system and method for depositing a material on a substrate |
TW108137409A TW202032627A (en) | 2018-10-18 | 2019-10-17 | Deposition apparatus for depositing a material on a substrate and method for depositing a material on a substrate with a deposition apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/EP2018/078598 WO2020078557A1 (en) | 2018-10-18 | 2018-10-18 | Deposition apparatus, system and method for depositing a material on a substrate |
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WO2020078557A1 true WO2020078557A1 (en) | 2020-04-23 |
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PCT/EP2018/078598 WO2020078557A1 (en) | 2018-10-18 | 2018-10-18 | Deposition apparatus, system and method for depositing a material on a substrate |
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WO (1) | WO2020078557A1 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0109808A2 (en) * | 1982-11-12 | 1984-05-30 | Energy Conversion Devices, Inc. | An improved apparatus for the manufacture of photovoltaic devices |
US4470369A (en) * | 1982-07-12 | 1984-09-11 | Energy Conversion Devices, Inc. | Apparatus for uniformly heating a substrate |
JPH0247262A (en) * | 1988-08-10 | 1990-02-16 | Matsushita Electric Ind Co Ltd | Thin film formation |
JPH06116728A (en) * | 1992-10-02 | 1994-04-26 | Kobe Steel Ltd | Vacuum deposition plating method and vacuum deposition plating equipment |
US20150110960A1 (en) * | 2013-10-18 | 2015-04-23 | Applied Materials, Inc. | Roller device for vacuum deposition arrangement, vacuum deposition arrangement with roller and method for operating a roller |
-
2018
- 2018-10-18 WO PCT/EP2018/078598 patent/WO2020078557A1/en active Application Filing
-
2019
- 2019-10-17 TW TW108137409A patent/TW202032627A/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4470369A (en) * | 1982-07-12 | 1984-09-11 | Energy Conversion Devices, Inc. | Apparatus for uniformly heating a substrate |
EP0109808A2 (en) * | 1982-11-12 | 1984-05-30 | Energy Conversion Devices, Inc. | An improved apparatus for the manufacture of photovoltaic devices |
JPH0247262A (en) * | 1988-08-10 | 1990-02-16 | Matsushita Electric Ind Co Ltd | Thin film formation |
JPH06116728A (en) * | 1992-10-02 | 1994-04-26 | Kobe Steel Ltd | Vacuum deposition plating method and vacuum deposition plating equipment |
US20150110960A1 (en) * | 2013-10-18 | 2015-04-23 | Applied Materials, Inc. | Roller device for vacuum deposition arrangement, vacuum deposition arrangement with roller and method for operating a roller |
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TW202032627A (en) | 2020-09-01 |
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