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WO2019211928A1 - Method for manufacturing retention device - Google Patents

Method for manufacturing retention device Download PDF

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Publication number
WO2019211928A1
WO2019211928A1 PCT/JP2019/000152 JP2019000152W WO2019211928A1 WO 2019211928 A1 WO2019211928 A1 WO 2019211928A1 JP 2019000152 W JP2019000152 W JP 2019000152W WO 2019211928 A1 WO2019211928 A1 WO 2019211928A1
Authority
WO
WIPO (PCT)
Prior art keywords
bonding
ceramic
ceramic member
base member
joining
Prior art date
Application number
PCT/JP2019/000152
Other languages
French (fr)
Japanese (ja)
Inventor
誠 栗林
真宏 井上
利真 榊原
Original Assignee
日本特殊陶業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本特殊陶業株式会社 filed Critical 日本特殊陶業株式会社
Priority to JP2019534901A priority Critical patent/JP6703646B2/en
Publication of WO2019211928A1 publication Critical patent/WO2019211928A1/en

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    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the technology disclosed in this specification relates to a method for manufacturing a holding device.
  • an electrostatic chuck that holds and holds a wafer by electrostatic attraction.
  • the electrostatic chuck includes a ceramic member, a base member, a joint portion for joining the ceramic member and the base member, and a chuck electrode provided inside the ceramic member, and a voltage is applied to the chuck electrode.
  • the wafer is adsorbed and held on the surface of the ceramic member (hereinafter referred to as “adsorption surface”) by utilizing the electrostatic attractive force generated by this.
  • the accuracy of each process (film formation, etching, etc.) on the wafer may be reduced.
  • the ability to control the distribution is required.
  • an adjustment resin having a thermal conductivity different from the thermal conductivity of the joint is embedded in a position corresponding to the temperature distribution of the adsorption surface of the adhesion surface opposite to the adsorption surface of the ceramic member.
  • An electric chuck is known (see, for example, Patent Documents 1 and 2).
  • the temperature distribution on the bonding surface of the ceramic member alone becomes a desired temperature by embedding the adjustment resin in the bonding surface of the ceramic member before bonding the ceramic member to the base member. Even if the base member is bonded to the ceramic member, the temperature distribution on the bonding surface may fluctuate and deviate from a desired temperature. Then, for example, the ceramic member is peeled off from the base member, the adjustment resin embedded in the bonding surface of the ceramic member is adjusted, and the process of re-joining the ceramic member and the base member again increases. The manufacturing process may be complicated.
  • Such a problem is not limited to an electrostatic chuck that holds a wafer using electrostatic attraction, but is a problem common to holding devices in which a ceramic member and a base member are joined.
  • a method for manufacturing a holding device disclosed in the present specification includes a ceramic having a first surface substantially perpendicular to a first direction and a second surface opposite to the first surface.
  • a pre-bonding ceramic member that is the ceramic member before being bonded via the bonding portion and a pre-bonding base member that is the base member before being bonded via the bonding portion are prepared.
  • the process Measuring a height difference distribution of at least one of the second surface of the ceramic member before bonding and the third surface of the base member before bonding; and the ceramic member before bonding and the base member before bonding. Predicting the temperature distribution of the first surface when the pre-joining ceramic member and the pre-joining base member are joined based on the measurement result of the height difference distribution before joining, A step of changing at least one configuration of the pre-bonding ceramic member, the pre-bonding base member, and the bonding portion in accordance with a prediction result of the surface temperature distribution.
  • the inventor of the present application greatly affects the temperature distribution of the first surface of the ceramic member in the holding device completed by joining the ceramic member before joining and the base member before joining through the joint part, This is a variation in the thickness of the bonded portion, and the variation in the thickness of the bonded portion can be predicted from the height difference distribution of at least one of the second surface of the ceramic member before bonding and the third surface of the base member before bonding. , Found a new thing. Therefore, in the method of manufacturing the holding device, the height difference distribution of at least one of the second surface of the ceramic member before joining and the third surface of the base member before joining is measured, and the ceramic member and base portion before joining are measured.
  • the temperature distribution of the first surface when the ceramic member before joining and the base member before joining are joined is predicted, and the temperature distribution prediction result of the first surface is predicted. Accordingly, at least one of the structure of the ceramic member before bonding, the base member before bonding, and the bonding portion is changed. Therefore, according to the method for manufacturing the holding device, when the pre-bonding ceramic member and the base member before bonding are joined to complete the holding device, the temperature distribution of the first surface of the holding device is measured. As compared with the above, it is possible to provide a holding device capable of controlling the temperature distribution of the first surface while simplifying the manufacturing process of the holding device.
  • the predicted result of the temperature distribution of the first surface is that the first surface has a relatively high temperature and a first region where the temperature is relatively low. 2 regions may be included. According to the method for manufacturing the holding device, it is possible to provide a holding device that can control the temperature distribution of the first surface while simplifying the manufacturing process of the holding device.
  • a first joint that overlaps the first region in the first direction in the joint according to a prediction result of the temperature distribution of the first surface.
  • the configuration of the joint portion is changed so that the thermal conductivity of the portion is higher than the thermal conductivity of the second joint portion that overlaps the second region in the first direction in the joint portion. May be.
  • the manufacturing method of the holding device it is possible to provide a holding device capable of controlling the temperature distribution of the first surface while simplifying the manufacturing process of the holding device by changing the configuration of the joint portion.
  • a portion of the second surface of the ceramic member before bonding that overlaps the second region in the first direction view may be processed.
  • a holding device capable of controlling the temperature distribution of the first surface while simplifying the manufacturing process of the holding device by processing the second surface of the ceramic member before bonding is provided. can do.
  • a portion of the third surface of the base member before joining that overlaps the second region in the first direction view may be processed.
  • the holding device capable of controlling the temperature distribution of the first surface while simplifying the manufacturing process of the holding device by processing the third surface of the base member before joining is provided. can do.
  • a method for manufacturing a holding device disclosed in the present specification includes a first surface that is substantially perpendicular to a first direction, and a second surface that is opposite to the first surface.
  • a plurality of pre-joining base members including a pre-joining ceramic member that is the ceramic member before joining via the joining portion, and the base member before joining via the joining portion; Prepare Measuring the height difference distribution of the second surface of the pre-bonding ceramic member and the height difference distribution of the third surface of each of the plurality of base members before bonding, and the ceramic before bonding.
  • the first surface when the ceramic member before joining and each of the plurality of base members before joining are joined based on the measurement result of the height difference distribution. Predicting the temperature distribution of the first surface, extracting one base member before joining from the plurality of base members before joining in accordance with a prediction result of the temperature distribution of the first surface, and joining the joints Joining the pre-ceramic member and the extracted pre-joining base member via the joint.
  • the first holding device in the completed body of the holding device is used.
  • the temperature distribution on the first surface of the holding device is As compared with the case of measurement, it is possible to provide a holding device that can control the temperature distribution of the first surface while simplifying the manufacturing process of the holding device.
  • a method for manufacturing a holding device disclosed in the present specification includes a first surface that is substantially perpendicular to a first direction, and a second surface that is opposite to the first surface.
  • a plurality of pre-bonding ceramic members including the ceramic member before being bonded via the bonding portion, and a pre-bonding base member which is the base member before being bonded via the bonding portion; Prepare Measuring the height difference distribution of the second surface of each of the plurality of pre-bonding ceramic members and the height difference distribution of the third surface of the base member before bonding, and the ceramics before bonding.
  • the first holding device in the completed body of the holding device is based on the measurement result of the height difference distribution between the second surface of each of the plurality of pre-bonding ceramic members and the third surface of the base member before bonding.
  • the manufacturing method of the holding device after completing the holding device by joining each of the plurality of pre-bonding ceramic members and the base member before bonding, the temperature distribution on the first surface of the holding device is As compared with the case of measurement, it is possible to provide a holding device that can control the temperature distribution of the first surface while simplifying the manufacturing process of the holding device.
  • a heater device such as an electrostatic chuck or a CVD heater, a vacuum chuck, or other ceramic member and a base member are joined. It can be realized in the form of a holding device, a manufacturing method thereof, and the like.
  • FIG. 1 is a perspective view schematically showing an external configuration of an electrostatic chuck 100 according to a first embodiment. It is explanatory drawing which shows roughly the XZ cross-sectional structure of the electrostatic chuck 100 in 1st Embodiment.
  • 3 is a flowchart illustrating a method for manufacturing the electrostatic chuck 100 according to the first embodiment. It is explanatory drawing which illustrates the correspondence of the height difference of ceramic side joining surface S2, and the temperature difference of adsorption
  • FIG. It is a flowchart which shows the manufacturing method of the electrostatic chuck 100 in 2nd Embodiment. It is explanatory drawing which shows typically the one part process of the manufacturing method of the electrostatic chuck 100 in 2nd Embodiment.
  • FIG. 1 is a perspective view schematically showing an external configuration of the electrostatic chuck 100 in the first embodiment
  • FIG. 2 is an explanatory diagram schematically showing an XZ cross-sectional configuration of the electrostatic chuck 100 in the first embodiment. It is. In each figure, XYZ axes orthogonal to each other for specifying the direction are shown. In this specification, for convenience, the positive direction of the Z-axis is referred to as the upward direction, and the negative direction of the Z-axis is referred to as the downward direction. However, the electrostatic chuck 100 is actually installed in a direction different from such a direction. May be.
  • the electrostatic chuck 100 is an apparatus for attracting and holding an object (for example, a wafer W) by electrostatic attraction, and is used for fixing the wafer W in a vacuum chamber of a semiconductor manufacturing apparatus, for example.
  • the electrostatic chuck 100 includes a ceramic member 10 and a base member 20 that are arranged in a predetermined arrangement direction (in this embodiment, the vertical direction (Z-axis direction)).
  • the ceramic member 10 and the base member 20 include a lower surface of the ceramic member 10 (hereinafter referred to as “ceramic side bonding surface S2”) and an upper surface of the base member 20 (hereinafter referred to as “base side bonding surface S3”). It arrange
  • the base member 20 is disposed so that the base-side bonding surface S3 is positioned on the ceramic-side bonding surface S2 side of the ceramic member.
  • the electrostatic chuck 100 further includes a bonding portion 30 disposed between the ceramic side bonding surface S2 of the ceramic member 10 and the base side bonding surface S3 of the base member 20.
  • the vertical direction (Z-axis direction) corresponds to the first direction in the claims
  • the ceramic side bonding surface S2 corresponds to the second surface in the claims
  • the base side bonding surface S3 is the patent. This corresponds to the third surface in the claims.
  • the ceramic member 10 is, for example, a circular flat plate-like member, and is formed of ceramics.
  • the diameter of the ceramic member 10 is, for example, about 50 mm to 500 mm (usually about 200 mm to 350 mm), and the thickness of the ceramic member 10 is, for example, about 1 mm to 10 mm.
  • Various ceramics can be used as a material for forming the ceramic member 10. From the viewpoint of strength, wear resistance, plasma resistance, and the like, for example, aluminum oxide (alumina, Al 2 O 3 ) or aluminum nitride (AlN) is used. It is preferable to use ceramics containing as a main component.
  • the main component here means a component having the largest content ratio (weight ratio).
  • a pair of internal electrodes 40 formed of a conductive material for example, tungsten or molybdenum
  • a voltage is applied to the pair of internal electrodes 40 from a power source (not shown)
  • an electrostatic attractive force is generated, and the wafer W causes the upper surface of the ceramic member 10 (hereinafter referred to as an “attracting surface S1”) by the electrostatic attractive force. It is fixed by adsorption.
  • the suction surface S1 corresponds to the first surface in the claims.
  • a heater 50 made of a resistance heating element including a conductive material (for example, tungsten or molybdenum) is provided inside the ceramic member 10.
  • a voltage is applied to the heater 50 from a power source (not shown)
  • the ceramic member 10 is heated by the heater 50 generating heat, and the wafer W held on the suction surface S1 of the ceramic member 10 is heated.
  • the heater 50 is formed in a substantially concentric shape as viewed in the Z direction in order to warm the adsorption surface S1 of the ceramic member 10 as uniformly as possible.
  • the base member 20 is a circular flat plate-like member having the same diameter as the ceramic member 10 or having a larger diameter than the ceramic member 10.
  • the base member 20 is a material having a higher thermal conductivity than the ceramic member 10 (for example, It is made of metal (aluminum, aluminum alloy, etc.).
  • the diameter of the base member 20 is, for example, about 220 mm to 550 mm (usually about 220 mm to 350 mm), and the thickness of the base member 20 is, for example, about 20 mm to 40 mm.
  • a refrigerant flow path 21 is formed inside the base member 20.
  • a coolant for example, a fluorine-based inert liquid or water
  • the base member 20 is cooled.
  • the adsorption surface of the ceramic member 10 is transferred by heat transfer between the ceramic member 10 and the base member 20 via the joint portion 30.
  • the temperature of the wafer W held in S1 is kept constant. Further, when heat input from the plasma is generated during the plasma processing, the temperature control of the wafer W is realized by adjusting the electric power applied to the heater 50.
  • the joint portion 30 includes an adhesive such as a silicone resin, an acrylic resin, and an epoxy resin, and joins the ceramic member 10 and the base member 20.
  • the thickness of the joint portion 30 is, for example, not less than 0.1 mm and not more than 1 mm.
  • FIG. 3 is a flowchart showing a method for manufacturing the electrostatic chuck 100 according to the first embodiment.
  • Preparation process of ceramic member 10P before joining and base member 20P before joining First, the pre-bonding ceramic member 10P and the pre-bonding base member 20P are prepared (S110).
  • the pre-bonding ceramic member 10P is the ceramic member 10 before being bonded via the bonding portion 30, and when the pre-bonding ceramic member 10P is processed in the process of changing the configuration of the electrostatic chuck 100 described later, Including those before and after the processing.
  • the base member 20P before joining is the base member 20 before joining via the joining part 30, and when the base member 20P before joining is processed in the process of changing the configuration of the electrostatic chuck 100 described later, Including those before and after the processing.
  • the pre-bonding ceramic member 10P and the pre-bonding base member 20P can be manufactured by a known manufacturing method.
  • the pre-bonding ceramic member 10P is manufactured by the following method. That is, a plurality of ceramic green sheets (for example, alumina green sheets) are prepared, and each ceramic green sheet is printed with metallized ink for constituting the internal electrode 40, the heater 50, and the like, and then the plurality of ceramic green sheets. Are bonded to each other, thermocompression-bonded, cut into a predetermined disk shape, fired, and finally subjected to polishing or the like, whereby the pre-bonding ceramic member 10P is manufactured.
  • a plurality of ceramic green sheets for example, alumina green sheets
  • the height difference distribution of the ceramic side bonding surface S2 of the pre-bonding ceramic member 10P is measured (S120).
  • the height difference distribution of the ceramic side bonding surface S2 is a distribution of deviation amounts with respect to the average height in the vertical direction at a plurality of points in the ceramic side bonding surface S2.
  • the ceramic side The height difference distribution (degree of unevenness) of the joint surface S2 is measured.
  • the ceramic-side bonding surface S2 is caused by shrinkage of the ceramic green sheet laminate or variation in polishing during firing of the method for manufacturing the pre-bonding ceramic member 10P.
  • undulation or the like occurs on the ceramic-side bonding surface S2.
  • the degree of undulations is, for example, about ⁇ 20 ⁇ m.
  • Prediction process of temperature distribution of adsorption surface S1 Next, before bonding the pre-bonding ceramic member 10P and the pre-bonding base member 20P, the pre-bonding ceramic member 10P and the pre-bonding base member 20P are bonded in advance based on the measurement result of the height difference distribution in S120.
  • the temperature distribution of the attracting surface S1 in the case (completed body of the electrostatic chuck 100) is predicted (specified) (S130).
  • the temperature distribution of the suction surface S1 refers to a temperature distribution in a surface direction substantially parallel to the suction surface S1 (a direction substantially perpendicular to the vertical direction).
  • the inventor of the present application has a great influence on the temperature distribution of the suction surface S1 of the ceramic member 10 in the completed electrostatic chuck 100, in particular, the variation in the thickness of the joint 30. It was newly found that the thickness variation of 30 can be predicted from the height difference distribution of at least one of the ceramic-side bonding surface S2 of the pre-bonding ceramic member 10P and the base-side bonding surface S3 of the pre-bonding base member 20P. If the thickness of the joint portion 30 varies, the heat transfer from the ceramic member 10 to the base member 20 varies in the surface direction, and as a result, the temperature distribution on the adsorption surface S1 varies.
  • Variations in heat transfer coefficient due to the internal structure of the ceramic member 10 and the base member 20 also affect the temperature distribution on the adsorption surface S1.
  • the influence due to the variation in the heat transfer coefficient of the ceramic member 10 or the like is smaller than the influence due to the variation in the thickness of the joint portion 30.
  • the variation in the heat transfer coefficient due to the internal structure of the ceramic member 10 or the base member 20 is local, for example, causing a high temperature or low temperature singularity at a specific location on the adsorption surface S1.
  • the pre-bonding ceramic member 10P and the pre-bonding base member 20P are connected to each other via the bonding portion 30.
  • the temperature distribution of the attracting surface S1 in the completed electrostatic chuck 100 after bonding may deviate from the desired distribution. More specifically, due to thermal deformation of the pre-bonding ceramic member 10P, the pre-bonding base member 20P, and the bonding portion 30 by heat treatment during bonding, the thickness of the bonding portion 30 varies, and the temperature distribution of the adsorption surface S1 is desired. May deviate from the distribution.
  • the variation in the thickness of the joint portion 30 is mainly influenced by the ceramic side joining surface S2 of the ceramic member 10 and the base side joining surface S3 of the base member 20. That is, between the height difference distribution of the ceramic side bonding surface S2 of the ceramic member 10 and the height difference distribution of the base side bonding surface S3 of the base member 20, and the temperature distribution of the attracting surface S1 in the completed electrostatic chuck 100, Correlation is established.
  • the base-side joining surface S3 Since the metal pre-joining base member 20P is relatively easy to process as compared to the ceramic pre-joining ceramic member 10P, the base-side joining surface S3 has a higher processing accuracy than the ceramic-side joining surface S2. It can be formed in a substantially plane.
  • the base-side joining surface S3 of the base member 20P before joining is a substantially flat surface, and variations in the thickness of the joining portion 30 are mainly caused by the ceramic-side joining surface S2 of the ceramic member 10P before joining. It depends on the height difference distribution.
  • the correspondence relationship information includes, for example, the height difference of the ceramic side bonding surface S2 of the pre-bonding ceramic member 10P (hereinafter simply referred to as “the height difference of the ceramic side bonding surface S2”) and the electrostatic chuck 100 caused by the height difference.
  • the difference in height of the ceramic-side bonding surface S2 is the height in the direction (vertical direction) substantially perpendicular to the suction surface S1 with respect to a predetermined reference position on the ceramic-side bonding surface S2 for a plurality of target positions on the ceramic-side bonding surface S2. It is a difference.
  • the plurality of target points are, for example, a plurality of points arranged in a lattice pattern on the ceramic side bonding surface S2 when viewed in the vertical direction.
  • the temperature difference of the suction surface S1 is the difference in temperature at the position on the suction surface S1 corresponding to each target position with respect to the ambient temperature (or the temperature at the position on the suction surface S1 corresponding to the reference position).
  • the correspondence information between the height difference of the ceramic side bonding surface S2 and the temperature difference of the adsorption surface S1 is, for example, the height difference of the ceramic side bonding surface S2 of the ceramic member 10P before bonding with respect to the plurality of electrostatic chucks 100. It can be obtained by measuring the temperature difference of the suction surface S1 in the finished product.
  • FIG. 4 is an explanatory diagram illustrating the correspondence between the height difference of the ceramic side bonding surface S2 of the pre-bonding ceramic member 10P and the temperature difference of the adsorption surface S1. From FIG. 4, as the height difference between the position on the ceramic side bonding surface S2 and the reference position is larger, the temperature of the position on the suction surface S1 corresponding to the position and the ambient temperature (the temperature of the position corresponding to the reference position). It can be seen that the difference between and increases. That is, the relatively large difference in height of the ceramic side bonding surface S2 means that the depth of the recess in the ceramic side bonding surface S2 is relatively large.
  • the thickness of the joint portion 30 in the completed electrostatic chuck 100 increases, and as a result, the heat transfer from the ceramic member 10 to the base member 20 decreases, thereby reducing the surface of the suction surface S1.
  • the height difference of the ceramic side bonding surface S2 of the ceramic member 10P before bonding can be known. For this reason, from the measurement result of the height difference distribution in S120, using the correspondence information between the height difference of the ceramic-side joining surface S2 and the temperature difference of the suction surface S1, the suction surface S1 in the completed electrostatic chuck 100 is measured.
  • the temperature distribution can be predicted.
  • the configuration of the electrostatic chuck 100 is changed according to the prediction result of the temperature distribution of the suction surface S1 in S130 (S140). Specifically, at least one of the pre-bonding ceramic member 10P, the pre-bonding base member 20P, and the bonding portion 30 so that the temperature distribution of the suction surface S1 approaches a desired distribution (for example, the temperature distribution in the surface direction is substantially uniform). Change one configuration.
  • a known method can be used as follows. (1) A plurality of members having different thermal conductivities are arranged inside the joint portion 30 so that variations in the temperature distribution of the adsorption surface S1 are suppressed.
  • the ceramic-side bonding surface S2 of the pre-bonding ceramic member 10P is processed so that variations in the temperature distribution of the adsorption surface S1 are suppressed.
  • the ceramic side bonding surface S2 is processed so that the variation in the thickness of the bonding portion 30 is suppressed.
  • the ceramic side bonding surface S2 is processed so that the height difference distribution of the ceramic side bonding surface S2 becomes higher.
  • the base-side bonding surface S3 of the base member 20P before bonding is processed so that variations in the temperature distribution of the suction surface S1 are suppressed.
  • the base-side bonding surface S3 is processed so that the variation in the thickness of the bonding portion 30 is suppressed.
  • the height difference distribution of at least one of the ceramic-side bonding surface S2 of the pre-bonding ceramic member 10P and the base-side bonding surface S3 of the pre-bonding base member 20P. Is measured (S120 in FIG. 3).
  • the pre-joining ceramic member 10P and the pre-joining base member 20P are joined.
  • the temperature distribution of the suction surface S1 in the finished product is predicted (S130).
  • At least one configuration of the pre-bonding ceramic member 10P, the pre-bonding base member 20P, and the bonding portion 30 is changed according to the prediction result of the temperature distribution of the suction surface S1 (S140). For this reason, according to the manufacturing method of the present embodiment, when the pre-bonding ceramic member 10P and the pre-bonding base member 20P are bonded to complete the electrostatic chuck 100, the temperature distribution of the attracting surface S1 is measured. As compared with the above, it is possible to provide the electrostatic chuck 100 capable of controlling the temperature distribution of the attracting surface S1 while simplifying the manufacturing process of the electrostatic chuck 100. This will be specifically described below.
  • FIG. 5 is an explanatory diagram showing the temperature distribution of the attracting surface S1 and the XZ cross-sectional configuration of the electrostatic chuck 100.
  • FIG. 5A shows the temperature distribution of the adsorption surface S1 before joining the pre-joining ceramic member 10P and the pre-joining base member 20P, and the XZ cross-sectional configuration of the pre-joining ceramic member 10P alone.
  • FIG. 2A the configuration of the electrostatic chuck 100 other than the pre-bonding ceramic member 10P is indicated by a two-dot chain line.
  • 5B shows the temperature distribution of the attracting surface S1 of the completed electrostatic chuck 100 after the bonding of the pre-bonding ceramic member 10P and the pre-bonding base member 20P, and the XZ cross-sectional configuration of the electrostatic chuck 100. It is shown.
  • the ceramic-side bonding surface S2 of the pre-bonding ceramic member 10P is not a perfect plane but has irregularities (swells). Specifically, a portion of the ceramic side bonding surface S2 located immediately below the first region S1A on the adsorption surface S1 of the ceramic member 10P before bonding is convex, and the ceramic member 10P before bonding is adsorbed. A portion located immediately below the second region S1B on the surface S1 is concave.
  • the measurement result does not reflect the influence on the temperature distribution due to the variation in the thickness of the bonding portion 30.
  • the temperature distribution of the suction surface S1 in the completed electrostatic chuck 100 cannot be measured.
  • the thickness of the joint portion 30 is determined from the height difference distribution of the ceramic-side joining surface S2 and the like. A variation in temperature distribution of the attracting surface S1 in the completed electrostatic chuck 100 due to the variation is predicted.
  • a portion of the ceramic side bonding surface S2 located immediately below the first region S1A on the suction surface S1 is convex, and the second region on the suction surface S1. The portion located immediately below S1B is concave.
  • the thickness D1 of the portion located immediately below the first region S1A in the joint portion 30 is the thickness D2 of the portion located directly below the second region S1B. It turns out that it becomes thin compared with. And from this magnitude relationship, it can be predicted that the temperature of the first region S1A is relatively high and the temperature of the second region S1B is relatively low on the suction surface S1.
  • the electrostatic chuck 100 is configured to suppress the temperature variation of the suction surface S1 before or during the joining of the pre-joining ceramic member 10P and the pre-joining base member 20P.
  • the configuration can be changed. Specifically, in the example of FIG. 5B, the first portion having a thermal conductivity lower than the thermal conductivity of the joint portion 30 in the portion located immediately below the first region S ⁇ b> 1 ⁇ / b> A in the joint portion 30.
  • the second member 34 having a higher thermal conductivity than that of the bonding portion 30 is embedded in a portion located immediately below the second region S1B.
  • the portion located immediately below the first region S1A corresponds to the first joint portion in the claims, and the portion located directly below the second region S1B is the second joint portion in the claims. It corresponds to.
  • FIG. 6 is a flowchart illustrating a method for manufacturing the electrostatic chuck 100 according to the second embodiment
  • FIG. 7 is an explanatory diagram schematically illustrating some steps of the method for manufacturing the electrostatic chuck 100 according to the second embodiment. It is. Among the steps of the manufacturing method of the second embodiment, the same steps as those of the manufacturing method of the first embodiment described above are denoted by the same reference numerals, and the description thereof is omitted.
  • Method for manufacturing electrostatic chuck 100 (Preparation step of the pre-bonding ceramic member 10P and the plurality of pre-bonding base members 20P): First, the pre-bonding ceramic member 10P and the plurality of pre-bonding base members 20P before being bonded to each other are prepared (S110a). The manufacturing method of the pre-bonding ceramic member 10P and the pre-bonding base member 20P is as described in the first embodiment.
  • the temperature distribution of the suction surface S1 in the completed electrostatic chuck 100 is predicted.
  • the height in S120a is determined. From the measurement result of the difference distribution, the temperature distribution of the attracting surface S1 in the completed electrostatic chuck 100 is predicted.
  • hird base member extraction step Next, before bonding the pre-bonding ceramic member 10P and the pre-bonding base member 20P, one of the plurality of pre-bonding base members 20P is pre-bonded according to the prediction result of the temperature distribution in S130a.
  • the base member 20P is extracted (S140a). Specifically, among the plurality of pre-bonding base members 20P, the temperature distribution of the attracting surface S1 in the completed electrostatic chuck 100 bonded to the pre-bonding ceramic member 10P is a desired distribution (for example, a temperature distribution in the surface direction).
  • One pre-joining base member 20P that is the closest combination is extracted.
  • the pre-bonding ceramic member 10P and the pre-bonding base member 20P are connected in relation to the connection of the internal structure (gas path, conduction path, etc.) between the pre-bonding ceramic member 10P and the pre-bonding base member 20P.
  • the positional relationship in the circumferential direction around the axis (Z axis) along the vertical direction cannot be changed. That is, it is not possible to employ a method of bringing the temperature distribution of the suction surface S1 closer to a desired distribution by changing the circumferential positional relationship between the pre-bonding ceramic member 10P and the pre-bonding base member 20P.
  • FIG. 7 shows a ceramic member 10P before bonding and three base members 20P (20A to 20C) before bonding.
  • the three pre-joining base members 20A to 20C have different height distributions of the base-side joining surface S3. From the measurement results of the respective height difference distributions, the combination in which the temperature distribution of the attracting surface S1 in the completed electrostatic chuck 100 is closest to the desired distribution is a combination of the pre-bonding ceramic member 10P and the pre-bonding base member 20A. Therefore, the base member 20A before joining was extracted.
  • the pre-bonding ceramic member 10P and the extracted pre-bonding base member 20A In the combination of the pre-bonding ceramic member 10P and the extracted pre-bonding base member 20A, one recess and the other protrusion are opposed to each other with respect to the ceramic-side bonding surface S2 and the base-side bonding surface S3. It becomes uneven. For this reason, in the combination of the pre-bonding ceramic member 10P and the pre-bonding base member 20A, compared with other combinations (pre-bonding ceramic member 10P and pre-bonding base member 20B, etc.), the bonded portion in the completed electrostatic chuck 100 The variation in the thickness in the 30 plane direction can be most suppressed.
  • the level of the ceramic-side bonding surface S2 of the pre-bonding ceramic member 10P and the base-side bonding surfaces S3 of the plurality of pre-bonding base members 20P is different.
  • the temperature distribution of the attracting surface S1 in the completed electrostatic chuck 100 is predicted (S130a), and the plurality of base members 20P before bonding are determined according to the prediction result.
  • One pre-joining base member 20P can be extracted from the inside (S140a).
  • the temperature distribution of the adsorption surface S1 of the electrostatic chuck 100 is completed after the pre-bonding ceramic member 10P and the pre-bonding base member 20P are bonded to complete the electrostatic chuck 100.
  • the electrostatic chuck 100 capable of controlling the temperature distribution of the suction surface S1 while simplifying the manufacturing process of the electrostatic chuck 100.
  • the configuration of the electrostatic chuck 100 in each of the above embodiments is merely an example, and can be variously modified.
  • at least one of the internal electrode 40 and the heater 50 may not be provided inside the ceramic member 10.
  • the electrostatic chuck 100 includes, for example, a structure in which a metal, ceramics, resin, or the like is disposed between the ceramic member 10 and the base member 20, or between the ceramic member 10 and the base member 20.
  • a configuration in which a heater is arranged separately from the heater 50 arranged inside is also possible.
  • the manufacturing method of the electrostatic chuck 100 in each of the above embodiments is merely an example, and various modifications can be made.
  • the height difference distribution of the base-side joining surface S3 of the base member 20 or the height difference distribution of the ceramic-side joining surface S2 of the ceramic member 10P before joining and before joining may be measured.
  • a plurality of pre-bonding ceramic members 10P and a pre-bonding base member 20P are prepared, and the height difference distribution of each ceramic-side bonding surface S2 of the plurality of pre-bonding ceramic members 10P and Based on the measurement result with the height difference distribution of the base-side joining surface S3 of the base member 20P before joining, the temperature distribution of the attracting surface S1 in the completed body of the electrostatic chuck 100 is predicted, and according to the prediction result, a plurality of One pre-bonding ceramic member (ceramic member to be bonded) may be extracted from the pre-bonding ceramic members.
  • the present invention is not limited to the electrostatic chuck 100 that holds the wafer W by using electrostatic attraction, but can be applied to other holding devices (such as a vacuum chuck).

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Abstract

Provided is a retention device which is capable of controlling the temperature distribution on a first surface while enabling simplifying of steps for manufacturing said retention device. This method for manufacturing a retention device involves: preparing a pre-bonded ceramic member and a pre-bonded base member; and measuring a level difference distribution on a second surface of the pre-bonded ceramic member and/or a third surface of the pre-bonded base member. Next, prior to bonding the pre-bonded ceramic member and the pre-bonded base member together, a prediction is made, on the basis of the measurement result of the level difference distribution, of the temperature distribution on the first surface when bonding is performed between the pre-bonded ceramic member and the pre-bonded base member. Further, according to the prediction result of the temperature distribution on the first surface, a change is made to the configuration of at least one of the pre-bonded ceramic member, the pre-bonded base member, and a junction area therebetween.

Description

保持装置の製造方法Method for manufacturing holding device
 本明細書に開示される技術は、保持装置の製造方法に関する。 The technology disclosed in this specification relates to a method for manufacturing a holding device.
 保持装置として、例えば、ウェハを静電引力により吸着して保持する静電チャックが知られている。静電チャックは、セラミックス部材と、ベース部材と、セラミックス部材とベース部材とを接合する接合部と、セラミックス部材の内部に設けられたチャック電極とを備えており、チャック電極に電圧が印加されることにより発生する静電引力を利用して、セラミックス部材の表面(以下、「吸着面」という)にウェハを吸着して保持する。 As the holding device, for example, an electrostatic chuck that holds and holds a wafer by electrostatic attraction is known. The electrostatic chuck includes a ceramic member, a base member, a joint portion for joining the ceramic member and the base member, and a chuck electrode provided inside the ceramic member, and a voltage is applied to the chuck electrode. The wafer is adsorbed and held on the surface of the ceramic member (hereinafter referred to as “adsorption surface”) by utilizing the electrostatic attractive force generated by this.
 静電チャックの吸着面に保持されたウェハの温度が所望の温度にならないと、ウェハに対する各処理(成膜、エッチング等)の精度が低下するおそれがあるため、静電チャックにはウェハの温度分布を制御する性能が求められる。 If the temperature of the wafer held on the chucking surface of the electrostatic chuck does not reach a desired temperature, the accuracy of each process (film formation, etching, etc.) on the wafer may be reduced. The ability to control the distribution is required.
 従来から、セラミックス部材の吸着面とは反対側の接着面のうち、吸着面の温度分布に応じた位置に、熱伝導率が接合部の熱伝導率とは異なる調整用樹脂が埋設された静電チャックが知られている(例えば、特許文献1,2参照)。 Conventionally, an adjustment resin having a thermal conductivity different from the thermal conductivity of the joint is embedded in a position corresponding to the temperature distribution of the adsorption surface of the adhesion surface opposite to the adsorption surface of the ceramic member. An electric chuck is known (see, for example, Patent Documents 1 and 2).
特開2016-1757号公報JP 2016-1757 A 特開2013-247342号公報JP 2013-247342 A
 上述した従来の静電チャックでは、セラミックス部材をベース部材に接合する前に、セラミックス部材の接着面に調整用樹脂を埋設することにより、セラミックス部材単体における接着面の温度分布が所望の温度になったとしても、セラミックス部材にベース部材が接合されると、接着面の温度分布が変動し、所望の温度からずれることがある。そうすると、例えば、セラミックス部材をベース部材から剥がして、セラミックス部材の接着面に埋設する調整用樹脂を調整し、再び、セラミックス部材とベース部材とを接合し直すなどの工程が増えるため、保持装置の製造工程が複雑化するおそれがある。 In the conventional electrostatic chuck described above, the temperature distribution on the bonding surface of the ceramic member alone becomes a desired temperature by embedding the adjustment resin in the bonding surface of the ceramic member before bonding the ceramic member to the base member. Even if the base member is bonded to the ceramic member, the temperature distribution on the bonding surface may fluctuate and deviate from a desired temperature. Then, for example, the ceramic member is peeled off from the base member, the adjustment resin embedded in the bonding surface of the ceramic member is adjusted, and the process of re-joining the ceramic member and the base member again increases. The manufacturing process may be complicated.
 なお、このような課題は、静電引力を利用してウェハを保持する静電チャックに限らず、セラミックス部材とベース部材とが接合された保持装置一般に共通の課題である。 Note that such a problem is not limited to an electrostatic chuck that holds a wafer using electrostatic attraction, but is a problem common to holding devices in which a ceramic member and a base member are joined.
 本明細書では、上述した課題を解決することが可能な技術を開示する。 In this specification, a technique capable of solving the above-described problems is disclosed.
 本明細書に開示される技術は、以下の形態として実現することが可能である。 The technology disclosed in this specification can be realized as the following forms.
(1)本明細書に開示される保持装置の製造方法は、第1の方向に略垂直な第1の表面と、前記第1の表面とは反対側の第2の表面と、を有するセラミックス部材と、第3の表面を有し、前記第3の表面が前記セラミックス部材の前記第2の表面側に位置するように配置されたベース部材と、前記セラミックス部材の前記第2の表面と前記ベース部材の前記第3の表面との間に配置され、前記セラミックス部材と前記ベース部材とを接合する接合部と、を備え、前記セラミックス部材の前記第1の表面上に対象物を保持する保持装置の製造方法において、前記接合部を介して接合する前の前記セラミックス部材である接合前セラミックス部材と、前記接合部を介して接合する前の前記ベース部材である接合前ベース部材と、を準備する工程と、前記接合前セラミックス部材の前記第2の表面と前記接合前ベース部材の前記第3の表面との少なくとも一方の高低差分布を測定する工程と、前記接合前セラミックス部材と前記接合前ベース部材とを接合する前に、前記高低差分布の測定結果に基づき、前記接合前セラミックス部材と前記接合前ベース部材とを接合した場合における前記第1の表面の温度分布を予測する工程と、前記第1の表面の温度分布の予測結果に応じて、前記接合前セラミックス部材と前記接合前ベース部材と前記接合部との少なくとも1つの構成を変更する工程と、を含む。本願発明者は、接合前セラミックス部材と接合前ベース部材とを、接合部を介して接合して完成した保持装置におけるセラミックス部材の第1の表面の温度分布に大きく影響を与えるのは、特に、接合部の厚さのばらつきであり、その接合部の厚さのばらつきは、接合前セラミックス部材の第2の表面と接合前ベース部材の第3の表面との少なくとも一方の高低差分布から予測できる、ことを新たに見出した。そこで、本保持装置の製造方法では、接合前セラミックス部材の第2の表面と接合前ベース部材の第3の表面との少なくとも一方の高低差分布を測定し、接合前セラミックス部材とベース部との接合前に、上記高低差分布の測定結果に基づき、接合前セラミックス部材と接合前ベース部材とを接合した場合における第1の表面の温度分布を予測し、第1の表面の温度分布の予測結果に応じて、接合前セラミックス部材と接合前ベース部材と接合部との少なくとも1つの構成を変更する。このため、本保持装置の製造方法によれば、接合前セラミックス部材と接合前ベース部材とを接合して保持装置を完成させた後に、保持装置の第1の表面の温度分布が測定される場合に比べて、保持装置の製造工程を簡略化しつつ、第1の表面の温度分布を制御可能な保持装置を提供することができる。 (1) A method for manufacturing a holding device disclosed in the present specification includes a ceramic having a first surface substantially perpendicular to a first direction and a second surface opposite to the first surface. A member, a base member having a third surface, the third surface being located on the second surface side of the ceramic member, the second surface of the ceramic member, and the A holding part that is disposed between the third surface of the base member and that joins the ceramic member and the base member, and holds the object on the first surface of the ceramic member In the apparatus manufacturing method, a pre-bonding ceramic member that is the ceramic member before being bonded via the bonding portion and a pre-bonding base member that is the base member before being bonded via the bonding portion are prepared. And the process Measuring a height difference distribution of at least one of the second surface of the ceramic member before bonding and the third surface of the base member before bonding; and the ceramic member before bonding and the base member before bonding. Predicting the temperature distribution of the first surface when the pre-joining ceramic member and the pre-joining base member are joined based on the measurement result of the height difference distribution before joining, A step of changing at least one configuration of the pre-bonding ceramic member, the pre-bonding base member, and the bonding portion in accordance with a prediction result of the surface temperature distribution. The inventor of the present application greatly affects the temperature distribution of the first surface of the ceramic member in the holding device completed by joining the ceramic member before joining and the base member before joining through the joint part, This is a variation in the thickness of the bonded portion, and the variation in the thickness of the bonded portion can be predicted from the height difference distribution of at least one of the second surface of the ceramic member before bonding and the third surface of the base member before bonding. , Found a new thing. Therefore, in the method of manufacturing the holding device, the height difference distribution of at least one of the second surface of the ceramic member before joining and the third surface of the base member before joining is measured, and the ceramic member and base portion before joining are measured. Before joining, based on the measurement result of the height difference distribution, the temperature distribution of the first surface when the ceramic member before joining and the base member before joining are joined is predicted, and the temperature distribution prediction result of the first surface is predicted. Accordingly, at least one of the structure of the ceramic member before bonding, the base member before bonding, and the bonding portion is changed. Therefore, according to the method for manufacturing the holding device, when the pre-bonding ceramic member and the base member before bonding are joined to complete the holding device, the temperature distribution of the first surface of the holding device is measured. As compared with the above, it is possible to provide a holding device capable of controlling the temperature distribution of the first surface while simplifying the manufacturing process of the holding device.
(2)上記保持装置の製造方法において、前記第1の表面の温度分布の予測結果は、前記第1の表面が、相対的に温度が高い第1の領域と、相対的に温度が低い第2の領域とを含んでいてもよい。本保持装置の製造方法によれば、保持装置の製造工程を簡略化しつつ、第1の表面の温度分布を制御可能な保持装置を提供することができる。 (2) In the method for manufacturing the holding device, the predicted result of the temperature distribution of the first surface is that the first surface has a relatively high temperature and a first region where the temperature is relatively low. 2 regions may be included. According to the method for manufacturing the holding device, it is possible to provide a holding device that can control the temperature distribution of the first surface while simplifying the manufacturing process of the holding device.
(3)上記保持装置の製造方法において、前記第1の表面の温度分布の予測結果に応じて、前記接合部のうち、前記第1の方向視で前記第1の領域と重なる第1の接合部分の熱伝導率が、前記接合部のうち、前記第1の方向視で前記第2の領域と重なる第2の接合部分の熱伝導率より高くなるように、前記接合部の構成を変更してもよい。本保持装置の製造方法によれば、接合部の構成を変更することにより、保持装置の製造工程を簡略化しつつ、第1の表面の温度分布を制御可能な保持装置を提供することができる。 (3) In the manufacturing method of the holding device, a first joint that overlaps the first region in the first direction in the joint according to a prediction result of the temperature distribution of the first surface. The configuration of the joint portion is changed so that the thermal conductivity of the portion is higher than the thermal conductivity of the second joint portion that overlaps the second region in the first direction in the joint portion. May be. According to the manufacturing method of the holding device, it is possible to provide a holding device capable of controlling the temperature distribution of the first surface while simplifying the manufacturing process of the holding device by changing the configuration of the joint portion.
(4)上記保持装置の製造方法において、前記接合前セラミックス部材の前記第2の表面のうち、前記第1の方向視で前記第2の領域と重なる部分を加工してもよい。本保持装置の製造方法によれば、接合前セラミックス部材の第2の表面を加工することにより、保持装置の製造工程を簡略化しつつ、第1の表面の温度分布を制御可能な保持装置を提供することができる。 (4) In the manufacturing method of the holding device, a portion of the second surface of the ceramic member before bonding that overlaps the second region in the first direction view may be processed. According to the method for manufacturing the holding device, a holding device capable of controlling the temperature distribution of the first surface while simplifying the manufacturing process of the holding device by processing the second surface of the ceramic member before bonding is provided. can do.
(5)上記保持装置の製造方法において、前記接合前ベース部材の前記第3の表面のうち、前記第1の方向視で前記第2の領域と重なる部分を加工してもよい。本保持装置の製造方法によれば、接合前ベース部材の第3の表面を加工することにより、保持装置の製造工程を簡略化しつつ、第1の表面の温度分布を制御可能な保持装置を提供することができる。 (5) In the manufacturing method of the holding device, a portion of the third surface of the base member before joining that overlaps the second region in the first direction view may be processed. According to the manufacturing method of the holding device, the holding device capable of controlling the temperature distribution of the first surface while simplifying the manufacturing process of the holding device by processing the third surface of the base member before joining is provided. can do.
(6)本明細書に開示される保持装置の製造方法は、第1の方向に略垂直な第1の表面と、前記第1の表面とは反対側の第2の表面と、を有するセラミックス部材と、第3の表面を有し、前記第3の表面が前記セラミックス部材の前記第2の表面側に位置するように配置されたベース部材と、前記セラミックス部材の前記第2の表面と前記ベース部材の前記第3の表面との間に配置され、前記セラミックス部材と前記ベース部材とを接合する接合部と、を備え、前記セラミックス部材の前記第1の表面上に対象物を保持する保持装置の製造方法において、前記接合部を介して接合する前の前記セラミックス部材である接合前セラミックス部材と、前記接合部を介して接合する前の前記ベース部材を含む複数の接合前ベース部材と、を準備する工程と、前記接合前セラミックス部材の前記第2の表面の高低差分布と、前記複数の接合前ベース部材それぞれの前記第3の表面の高低差分布と、を測定する工程と、前記接合前セラミックス部材と前記接合前ベース部材とを接合する前に、前記高低差分布の測定結果に基づき、前記接合前セラミックス部材と前記複数の接合前ベース部材のそれぞれとを接合した場合における前記第1の表面の温度分布を予測する工程と、前記第1の表面の温度分布の予測結果に応じて、前記複数の接合前ベース部材の中から、1つの前記接合前ベース部材を抽出する工程と、前記接合前セラミックス部材と、抽出された前記接合前ベース部材とを、前記接合部を介して接合する工程と、を含む。本保持装置の製造方法では、接合前セラミックス部材の第2の表面と、複数の接合前ベース部材それぞれの第3の表面との高低差分布の測定結果に基づき、保持装置の完成体における第1の表面の温度分布を予測し、その予測結果に応じて、複数の接合前ベース部材の中から、1つの接合前ベース部材を抽出することができる。このため、本保持装置の製造方法によれば、接合前セラミックス部材と複数の接合前ベース部材のそれぞれとを接合して保持装置を完成させた後に、保持装置の第1の表面の温度分布が測定される場合に比べて、保持装置の製造工程を簡略化しつつ、第1の表面の温度分布を制御可能な保持装置を提供することができる。 (6) A method for manufacturing a holding device disclosed in the present specification includes a first surface that is substantially perpendicular to a first direction, and a second surface that is opposite to the first surface. A member, a base member having a third surface, the third surface being located on the second surface side of the ceramic member, the second surface of the ceramic member, and the A holding part that is disposed between the third surface of the base member and that joins the ceramic member and the base member, and holds the object on the first surface of the ceramic member In the method of manufacturing an apparatus, a plurality of pre-joining base members including a pre-joining ceramic member that is the ceramic member before joining via the joining portion, and the base member before joining via the joining portion; Prepare Measuring the height difference distribution of the second surface of the pre-bonding ceramic member and the height difference distribution of the third surface of each of the plurality of base members before bonding, and the ceramic before bonding. Before joining the member and the base member before joining, the first surface when the ceramic member before joining and each of the plurality of base members before joining are joined based on the measurement result of the height difference distribution. Predicting the temperature distribution of the first surface, extracting one base member before joining from the plurality of base members before joining in accordance with a prediction result of the temperature distribution of the first surface, and joining the joints Joining the pre-ceramic member and the extracted pre-joining base member via the joint. In the method for manufacturing the holding device, based on the measurement result of the height difference between the second surface of the ceramic member before bonding and the third surface of each of the plurality of base members before bonding, the first holding device in the completed body of the holding device is used. It is possible to predict the temperature distribution of the surface of the base material and extract one base member before joining from a plurality of base members before joining according to the prediction result. For this reason, according to the manufacturing method of the holding device, after the pre-bonding ceramic member and each of the plurality of base members before bonding are joined to complete the holding device, the temperature distribution on the first surface of the holding device is As compared with the case of measurement, it is possible to provide a holding device that can control the temperature distribution of the first surface while simplifying the manufacturing process of the holding device.
(7)本明細書に開示される保持装置の製造方法は、第1の方向に略垂直な第1の表面と、前記第1の表面とは反対側の第2の表面と、を有するセラミックス部材と、第3の表面を有し、前記第3の表面が前記セラミックス部材の前記第2の表面側に位置するように配置されたベース部材と、前記セラミックス部材の前記第2の表面と前記ベース部材の前記第3の表面との間に配置され、前記セラミックス部材と前記ベース部材とを接合する接合部と、を備え、前記セラミックス部材の前記第1の表面上に対象物を保持する保持装置の製造方法において、前記接合部を介して接合する前の前記セラミックス部材を含む複数の接合前セラミックス部材と、前記接合部を介して接合する前の前記ベース部材である接合前ベース部材と、を準備する工程と、前記複数の接合前セラミックス部材それぞれの前記第2の表面の高低差分布と、前記接合前ベース部材の前記第3の表面の高低差分布と、を測定する工程と、前記接合前セラミックス部材と前記接合前ベース部材とを接合する前に、前記高低差分布の測定結果に基づき、前記複数の接合前セラミックス部材のそれぞれと前記接合前ベース部材とを接合した場合における前記第1の表面の温度分布を予測する工程と、前記第1の表面の温度分布の予測結果に応じて、前記複数の接合前セラミックス部材の中から、1つの前記接合前セラミックス部材を抽出する工程と、抽出された前記接合前セラミックス部材と、前記接合前ベース部材とを、前記接合部を介して接合する工程と、を含む。本保持装置の製造方法では、複数の接合前セラミックス部材それぞれの第2の表面と、接合前ベース部材の第3の表面との高低差分布の測定結果に基づき、保持装置の完成体における第1の表面の温度分布を予測し、その予測結果に応じて、複数の接合前セラミックス部材の中から、1つの接合前セラミックス部材を抽出することができる。このため、本保持装置の製造方法によれば、複数の接合前セラミックス部材のそれぞれと接合前ベース部材とを接合して保持装置を完成させた後に、保持装置の第1の表面の温度分布が測定される場合に比べて、保持装置の製造工程を簡略化しつつ、第1の表面の温度分布を制御可能な保持装置を提供することができる。 (7) A method for manufacturing a holding device disclosed in the present specification includes a first surface that is substantially perpendicular to a first direction, and a second surface that is opposite to the first surface. A member, a base member having a third surface, the third surface being located on the second surface side of the ceramic member, the second surface of the ceramic member, and the A holding part that is disposed between the third surface of the base member and that joins the ceramic member and the base member, and holds the object on the first surface of the ceramic member In the method for manufacturing an apparatus, a plurality of pre-bonding ceramic members including the ceramic member before being bonded via the bonding portion, and a pre-bonding base member which is the base member before being bonded via the bonding portion; Prepare Measuring the height difference distribution of the second surface of each of the plurality of pre-bonding ceramic members and the height difference distribution of the third surface of the base member before bonding, and the ceramics before bonding. The first surface when each of the plurality of pre-joining ceramic members and the pre-joining base member are joined based on the measurement result of the height difference distribution before joining the member and the pre-joining base member. And a step of extracting one pre-joining ceramic member from the plurality of pre-joining ceramic members according to a prediction result of the temperature distribution of the first surface. Joining the ceramic member before joining and the base member before joining via the joining portion. In the manufacturing method of the holding device, the first holding device in the completed body of the holding device is based on the measurement result of the height difference distribution between the second surface of each of the plurality of pre-bonding ceramic members and the third surface of the base member before bonding. It is possible to predict the temperature distribution of the surface of the steel sheet and to extract one pre-joining ceramic member from among the plurality of pre-joining ceramic members according to the prediction result. For this reason, according to the manufacturing method of the holding device, after completing the holding device by joining each of the plurality of pre-bonding ceramic members and the base member before bonding, the temperature distribution on the first surface of the holding device is As compared with the case of measurement, it is possible to provide a holding device that can control the temperature distribution of the first surface while simplifying the manufacturing process of the holding device.
 なお、本明細書に開示される技術は、種々の形態で実現することが可能であり、例えば、静電チャック、CVDヒータ等のヒータ装置、真空チャック、その他のセラミックス部材とベース部材とが接合された保持装置、それらの製造方法等の形態で実現することが可能である。 The technology disclosed in this specification can be realized in various forms. For example, a heater device such as an electrostatic chuck or a CVD heater, a vacuum chuck, or other ceramic member and a base member are joined. It can be realized in the form of a holding device, a manufacturing method thereof, and the like.
第1実施形態における静電チャック100の外観構成を概略的に示す斜視図である。1 is a perspective view schematically showing an external configuration of an electrostatic chuck 100 according to a first embodiment. 第1実施形態における静電チャック100のXZ断面構成を概略的に示す説明図である。It is explanatory drawing which shows roughly the XZ cross-sectional structure of the electrostatic chuck 100 in 1st Embodiment. 第1実施形態における静電チャック100の製造方法を示すフローチャートである。3 is a flowchart illustrating a method for manufacturing the electrostatic chuck 100 according to the first embodiment. セラミックス側接合面S2の高低差と吸着面S1の温度差との対応関係を例示する説明図である。It is explanatory drawing which illustrates the correspondence of the height difference of ceramic side joining surface S2, and the temperature difference of adsorption | suction surface S1. 吸着面S1の温度分布と静電チャック100のXZ断面構成とを示す説明図である。It is explanatory drawing which shows temperature distribution of adsorption | suction surface S1, and XZ cross-sectional structure of the electrostatic chuck 100. FIG. 第2実施形態における静電チャック100の製造方法を示すフローチャートである。It is a flowchart which shows the manufacturing method of the electrostatic chuck 100 in 2nd Embodiment. 第2実施形態における静電チャック100の製造方法の一部の工程を模式的に示す説明図である。It is explanatory drawing which shows typically the one part process of the manufacturing method of the electrostatic chuck 100 in 2nd Embodiment.
A.第1実施形態:
A-1.静電チャック100の構成:
 図1は、第1実施形態における静電チャック100の外観構成を概略的に示す斜視図であり、図2は、第1実施形態における静電チャック100のXZ断面構成を概略的に示す説明図である。各図には、方向を特定するための互いに直交するXYZ軸が示されている。本明細書では、便宜的に、Z軸正方向を上方向といい、Z軸負方向を下方向というものとするが、静電チャック100は実際にはそのような向きとは異なる向きで設置されてもよい。
A. First embodiment:
A-1. Configuration of the electrostatic chuck 100:
FIG. 1 is a perspective view schematically showing an external configuration of the electrostatic chuck 100 in the first embodiment, and FIG. 2 is an explanatory diagram schematically showing an XZ cross-sectional configuration of the electrostatic chuck 100 in the first embodiment. It is. In each figure, XYZ axes orthogonal to each other for specifying the direction are shown. In this specification, for convenience, the positive direction of the Z-axis is referred to as the upward direction, and the negative direction of the Z-axis is referred to as the downward direction. However, the electrostatic chuck 100 is actually installed in a direction different from such a direction. May be.
 静電チャック100は、対象物(例えばウェハW)を静電引力により吸着して保持する装置であり、例えば半導体製造装置の真空チャンバー内でウェハWを固定するために使用される。静電チャック100は、所定の配列方向(本実施形態では上下方向(Z軸方向))に並べて配置されたセラミックス部材10およびベース部材20を備える。セラミックス部材10とベース部材20とは、セラミックス部材10の下面(以下、「セラミックス側接合面S2」という)とベース部材20の上面(以下、「ベース側接合面S3」という)とが、後述する接合部30を挟んで上記配列方向に対向するように配置されている。すなわち、ベース部材20は、ベース側接合面S3がセラミックス部材のセラミックス側接合面S2側に位置するように配置される。静電チャック100は、さらに、セラミックス部材10のセラミックス側接合面S2とベース部材20のベース側接合面S3との間に配置された接合部30を備える。上下方向(Z軸方向)は、特許請求の範囲における第1の方向に相当し、セラミックス側接合面S2は、特許請求の範囲における第2の表面に相当し、ベース側接合面S3は、特許請求の範囲における第3の表面に相当する。 The electrostatic chuck 100 is an apparatus for attracting and holding an object (for example, a wafer W) by electrostatic attraction, and is used for fixing the wafer W in a vacuum chamber of a semiconductor manufacturing apparatus, for example. The electrostatic chuck 100 includes a ceramic member 10 and a base member 20 that are arranged in a predetermined arrangement direction (in this embodiment, the vertical direction (Z-axis direction)). The ceramic member 10 and the base member 20 include a lower surface of the ceramic member 10 (hereinafter referred to as “ceramic side bonding surface S2”) and an upper surface of the base member 20 (hereinafter referred to as “base side bonding surface S3”). It arrange | positions so that the junction part 30 may be pinched | interposed in the said arrangement direction. That is, the base member 20 is disposed so that the base-side bonding surface S3 is positioned on the ceramic-side bonding surface S2 side of the ceramic member. The electrostatic chuck 100 further includes a bonding portion 30 disposed between the ceramic side bonding surface S2 of the ceramic member 10 and the base side bonding surface S3 of the base member 20. The vertical direction (Z-axis direction) corresponds to the first direction in the claims, the ceramic side bonding surface S2 corresponds to the second surface in the claims, and the base side bonding surface S3 is the patent. This corresponds to the third surface in the claims.
 セラミックス部材10は、例えば円形平面の板状部材であり、セラミックスにより形成されている。セラミックス部材10の直径は、例えば50mm~500mm程度(通常は200mm~350mm程度)であり、セラミックス部材10の厚さは、例えば1mm~10mm程度である。 The ceramic member 10 is, for example, a circular flat plate-like member, and is formed of ceramics. The diameter of the ceramic member 10 is, for example, about 50 mm to 500 mm (usually about 200 mm to 350 mm), and the thickness of the ceramic member 10 is, for example, about 1 mm to 10 mm.
 セラミックス部材10の形成材料としては、種々のセラミックスが用いられ得るが、強度や耐摩耗性、耐プラズマ性等の観点から、例えば、酸化アルミニウム(アルミナ、Al)または窒化アルミニウム(AlN)を主成分とするセラミックスが用いられることが好ましい。なお、ここでいう主成分とは、含有割合(重量割合)の最も多い成分を意味する。 Various ceramics can be used as a material for forming the ceramic member 10. From the viewpoint of strength, wear resistance, plasma resistance, and the like, for example, aluminum oxide (alumina, Al 2 O 3 ) or aluminum nitride (AlN) is used. It is preferable to use ceramics containing as a main component. In addition, the main component here means a component having the largest content ratio (weight ratio).
 セラミックス部材10の内部には、導電性材料(例えば、タングステンやモリブデン等)により形成された一対の内部電極40が設けられている。一対の内部電極40に電源(図示せず)から電圧が印加されると、静電引力が発生し、この静電引力によってウェハWがセラミックス部材10の上面(以下、「吸着面S1」という)に吸着固定される。吸着面S1は、特許請求の範囲における第1の表面に相当する。 Inside the ceramic member 10, a pair of internal electrodes 40 formed of a conductive material (for example, tungsten or molybdenum) is provided. When a voltage is applied to the pair of internal electrodes 40 from a power source (not shown), an electrostatic attractive force is generated, and the wafer W causes the upper surface of the ceramic member 10 (hereinafter referred to as an “attracting surface S1”) by the electrostatic attractive force. It is fixed by adsorption. The suction surface S1 corresponds to the first surface in the claims.
 また、セラミックス部材10の内部には、導電性材料(例えば、タングステンやモリブデン等)を含む抵抗発熱体により構成されたヒータ50が設けられている。ヒータ50に電源(図示せず)から電圧が印加されると、ヒータ50が発熱することによってセラミックス部材10が温められ、セラミックス部材10の吸着面S1に保持されたウェハWが温められる。これにより、ウェハWの温度制御が実現される。ヒータ50は、例えば、セラミックス部材10の吸着面S1をできるだけ満遍なく温めるため、Z方向視で略同心円状に形成されている。 Further, a heater 50 made of a resistance heating element including a conductive material (for example, tungsten or molybdenum) is provided inside the ceramic member 10. When a voltage is applied to the heater 50 from a power source (not shown), the ceramic member 10 is heated by the heater 50 generating heat, and the wafer W held on the suction surface S1 of the ceramic member 10 is heated. Thereby, the temperature control of the wafer W is realized. For example, the heater 50 is formed in a substantially concentric shape as viewed in the Z direction in order to warm the adsorption surface S1 of the ceramic member 10 as uniformly as possible.
 ベース部材20は、例えばセラミックス部材10と同径の、または、セラミックス部材10より径が大きい円形平面の板状部材であり、例えば、熱伝導率がセラミックス部材10の熱伝導率より高い材料(例えば金属(アルミニウムやアルミニウム合金等))により形成されている。ベース部材20の直径は、例えば220mm~550mm程度(通常は220mm~350mm程度)であり、ベース部材20の厚さは、例えば20mm~40mm程度である。 The base member 20 is a circular flat plate-like member having the same diameter as the ceramic member 10 or having a larger diameter than the ceramic member 10. For example, the base member 20 is a material having a higher thermal conductivity than the ceramic member 10 (for example, It is made of metal (aluminum, aluminum alloy, etc.). The diameter of the base member 20 is, for example, about 220 mm to 550 mm (usually about 220 mm to 350 mm), and the thickness of the base member 20 is, for example, about 20 mm to 40 mm.
 ベース部材20の内部には冷媒流路21が形成されている。冷媒流路21に冷媒(例えば、フッ素系不活性液体や水等)が供給されると、ベース部材20が冷却される。上述したヒータ50によるセラミックス部材10の加熱と併せてベース部材20の冷却が行われると、接合部30を介したセラミックス部材10とベース部材20との間の伝熱により、セラミックス部材10の吸着面S1に保持されたウェハWの温度が一定に維持される。さらに、プラズマ処理中にプラズマからの入熱が生じた際には、ヒータ50に加える電力を調整することにより、ウェハWの温度制御が実現される。 A refrigerant flow path 21 is formed inside the base member 20. When a coolant (for example, a fluorine-based inert liquid or water) is supplied to the coolant channel 21, the base member 20 is cooled. When the base member 20 is cooled together with the heating of the ceramic member 10 by the heater 50 described above, the adsorption surface of the ceramic member 10 is transferred by heat transfer between the ceramic member 10 and the base member 20 via the joint portion 30. The temperature of the wafer W held in S1 is kept constant. Further, when heat input from the plasma is generated during the plasma processing, the temperature control of the wafer W is realized by adjusting the electric power applied to the heater 50.
 接合部30は、例えばシリコーン系樹脂やアクリル系樹脂、エポキシ系樹脂等の接着剤を含んでおり、セラミックス部材10とベース部材20とを接合している。接合部30の厚さは例えば0.1mm以上、1mm以下である。 The joint portion 30 includes an adhesive such as a silicone resin, an acrylic resin, and an epoxy resin, and joins the ceramic member 10 and the base member 20. The thickness of the joint portion 30 is, for example, not less than 0.1 mm and not more than 1 mm.
A-2.静電チャック100の製造方法:
 図3は、第1実施形態における静電チャック100の製造方法を示すフローチャートである。
A-2. Method for manufacturing electrostatic chuck 100:
FIG. 3 is a flowchart showing a method for manufacturing the electrostatic chuck 100 according to the first embodiment.
(接合前セラミックス部材10Pと接合前ベース部材20Pとの準備工程):
 はじめに、接合前セラミックス部材10Pと接合前ベース部材20Pとを準備する(S110)。接合前セラミックス部材10Pは、接合部30を介して接合する前のセラミックス部材10であり、後述の静電チャック100の構成の変更工程で接合前セラミックス部材10Pに加工が施される場合には、該加工の前後のものを含むものとする。接合前ベース部材20Pは、接合部30を介して接合する前のベース部材20であり、後述の静電チャック100の構成の変更工程で接合前ベース部材20Pに加工が施される場合には、該加工の前後のものを含むものとする。接合前セラミックス部材10Pおよび接合前ベース部材20Pは、公知の製造方法によって製造可能である。例えば、接合前セラミックス部材10Pは以下の方法で製造される。すなわち、複数のセラミックスグリーンシート(例えばアルミナグリーンシート)を準備し、各セラミックスグリーンシートに、内部電極40やヒータ50等を構成するためのメタライズインクの印刷等を行い、その後、複数のセラミックスグリーンシートを積層して熱圧着し、所定の円板形状にカットした上で焼成し、最後に研磨加工等を行うことにより、接合前セラミックス部材10Pが製造される。
(Preparation process of ceramic member 10P before joining and base member 20P before joining):
First, the pre-bonding ceramic member 10P and the pre-bonding base member 20P are prepared (S110). The pre-bonding ceramic member 10P is the ceramic member 10 before being bonded via the bonding portion 30, and when the pre-bonding ceramic member 10P is processed in the process of changing the configuration of the electrostatic chuck 100 described later, Including those before and after the processing. The base member 20P before joining is the base member 20 before joining via the joining part 30, and when the base member 20P before joining is processed in the process of changing the configuration of the electrostatic chuck 100 described later, Including those before and after the processing. The pre-bonding ceramic member 10P and the pre-bonding base member 20P can be manufactured by a known manufacturing method. For example, the pre-bonding ceramic member 10P is manufactured by the following method. That is, a plurality of ceramic green sheets (for example, alumina green sheets) are prepared, and each ceramic green sheet is printed with metallized ink for constituting the internal electrode 40, the heater 50, and the like, and then the plurality of ceramic green sheets. Are bonded to each other, thermocompression-bonded, cut into a predetermined disk shape, fired, and finally subjected to polishing or the like, whereby the pre-bonding ceramic member 10P is manufactured.
(セラミックス側接合面S2の高低差分布の測定工程):
 次に、接合前セラミックス部材10Pのセラミックス側接合面S2の高低差分布を測定する(S120)。セラミックス側接合面S2の高低差分布は、セラミックス側接合面S2内の複数点について、上下方向の平均高さに対するずれ量の分布である。具体的には、例えば3D形状測定機を用いて、セラミックス側接合面S2における複数点の高さ(吸着面S1に略垂直な方向(上下方向)における高低差)を測定することにより、セラミックス側接合面S2の高低差分布(凹凸の程度)を測定する。セラミックス側接合面S2を完全な平面に形成することは困難であり、例えば上述の接合前セラミックス部材10Pの製造方法の焼成時におけるセラミックスグリーンシートの積層体の収縮や研磨加工のばらつき等に起因して、セラミックス側接合面S2にうねりなどが生じる。なお、うねりの凹凸の度合いは、例えば±20μm程度である。
(Measurement process of height difference distribution of ceramic-side joining surface S2):
Next, the height difference distribution of the ceramic side bonding surface S2 of the pre-bonding ceramic member 10P is measured (S120). The height difference distribution of the ceramic side bonding surface S2 is a distribution of deviation amounts with respect to the average height in the vertical direction at a plurality of points in the ceramic side bonding surface S2. Specifically, for example, by using a 3D shape measuring machine, by measuring the heights of a plurality of points on the ceramic side bonding surface S2 (the height difference in the direction (vertical direction) substantially perpendicular to the adsorption surface S1), the ceramic side The height difference distribution (degree of unevenness) of the joint surface S2 is measured. It is difficult to form the ceramic-side bonding surface S2 in a complete plane. For example, the ceramic-side bonding surface S2 is caused by shrinkage of the ceramic green sheet laminate or variation in polishing during firing of the method for manufacturing the pre-bonding ceramic member 10P. As a result, undulation or the like occurs on the ceramic-side bonding surface S2. The degree of undulations is, for example, about ± 20 μm.
(吸着面S1の温度分布の予測工程):
 次に、接合前セラミックス部材10Pと接合前ベース部材20Pとを接合する前に、予め、S120での高低差分布の測定結果に基づき、接合前セラミックス部材10Pと接合前ベース部材20Pとを接合した場合(静電チャック100の完成体)における吸着面S1の温度分布を予測(特定)する(S130)。なお、吸着面S1の温度分布は、吸着面S1に略平行な面方向(上下方向に略垂直な方向)における温度分布をいう。
(Prediction process of temperature distribution of adsorption surface S1):
Next, before bonding the pre-bonding ceramic member 10P and the pre-bonding base member 20P, the pre-bonding ceramic member 10P and the pre-bonding base member 20P are bonded in advance based on the measurement result of the height difference distribution in S120. The temperature distribution of the attracting surface S1 in the case (completed body of the electrostatic chuck 100) is predicted (specified) (S130). Note that the temperature distribution of the suction surface S1 refers to a temperature distribution in a surface direction substantially parallel to the suction surface S1 (a direction substantially perpendicular to the vertical direction).
 ここで、本願発明者は、静電チャック100の完成体におけるセラミックス部材10の吸着面S1の温度分布に大きく影響を与えるのは、特に、接合部30の厚さのばらつきであり、その接合部30の厚さのばらつきは、接合前セラミックス部材10Pのセラミックス側接合面S2と接合前ベース部材20Pのベース側接合面S3との少なくとも一方の高低差分布から予測できる、ことを新たに見出した。接合部30の厚さにばらつきがあると、セラミックス部材10からベース部材20への熱移動が面方向にばらつき、その結果、吸着面S1の温度分布がばらつく。セラミックス部材10やベース部材20の内部構造に起因する熱伝達率のばらつき(例えばセラミックス部材10自体の厚みのばらつきやヒータ50の発熱分布のばらつき等)も、吸着面S1の温度分布に影響を与えるが、セラミックス部材10等の熱伝達率のばらつきによる影響は、接合部30の厚さのばらつきによる影響に比べて、小さい。また、セラミックス部材10やベース部材20の内部構造に起因する熱伝達率のばらつきは、例えば、吸着面S1上の特定箇所に高温または低温の温度特異点を生じさせるなど、局所的である。また、仮に、接合前セラミックス部材10P単体における吸着面S1の温度分布が所望の分布になるように制御できたとしても、接合前セラミックス部材10Pと接合前ベース部材20Pとを接合部30を介して接合すると、接合後の静電チャック100の完成体における吸着面S1の温度分布が所望の分布からずれることがある。より具体的には、接合の際の加熱処理による接合前セラミックス部材10P、接合前ベース部材20Pおよび接合部30の熱変形により、接合部30の厚さがばらつき、吸着面S1の温度分布が所望の分布からずれることがある。したがって、静電チャック100の完成体における吸着面S1の温度分布を効率良く制御するためには、静電チャック100の完成体における接合部30の厚さのばらつきを抑制することが有効である。そして、その接合部30の厚さのばらつきは、主として、セラミックス部材10のセラミックス側接合面S2とベース部材20のベース側接合面S3とによって影響を受ける。すなわち、セラミックス部材10のセラミックス側接合面S2の高低差分布やベース部材20のベース側接合面S3の高低差分布と、静電チャック100の完成体における吸着面S1の温度分布との間には、相関関係が成り立つ。なお、金属製の接合前ベース部材20Pは、セラミックス製の接合前セラミックス部材10Pに比べて比較的に加工し易いため、ベース側接合面S3は、セラミックス側接合面S2に比べて、高い加工精度で略平面に形成することが可能である。以下、本実施形態では、接合前ベース部材20Pのベース側接合面S3は、略平面であるとし、接合部30の厚さのばらつきは、主として、接合前セラミックス部材10Pのセラミックス側接合面S2の高低差分布に依存するものとする。 Here, the inventor of the present application has a great influence on the temperature distribution of the suction surface S1 of the ceramic member 10 in the completed electrostatic chuck 100, in particular, the variation in the thickness of the joint 30. It was newly found that the thickness variation of 30 can be predicted from the height difference distribution of at least one of the ceramic-side bonding surface S2 of the pre-bonding ceramic member 10P and the base-side bonding surface S3 of the pre-bonding base member 20P. If the thickness of the joint portion 30 varies, the heat transfer from the ceramic member 10 to the base member 20 varies in the surface direction, and as a result, the temperature distribution on the adsorption surface S1 varies. Variations in heat transfer coefficient due to the internal structure of the ceramic member 10 and the base member 20 (for example, variations in the thickness of the ceramic member 10 itself and variations in the heat generation distribution of the heater 50) also affect the temperature distribution on the adsorption surface S1. However, the influence due to the variation in the heat transfer coefficient of the ceramic member 10 or the like is smaller than the influence due to the variation in the thickness of the joint portion 30. Further, the variation in the heat transfer coefficient due to the internal structure of the ceramic member 10 or the base member 20 is local, for example, causing a high temperature or low temperature singularity at a specific location on the adsorption surface S1. Even if the temperature distribution of the adsorption surface S1 of the pre-bonding ceramic member 10P alone can be controlled to be a desired distribution, the pre-bonding ceramic member 10P and the pre-bonding base member 20P are connected to each other via the bonding portion 30. When bonded, the temperature distribution of the attracting surface S1 in the completed electrostatic chuck 100 after bonding may deviate from the desired distribution. More specifically, due to thermal deformation of the pre-bonding ceramic member 10P, the pre-bonding base member 20P, and the bonding portion 30 by heat treatment during bonding, the thickness of the bonding portion 30 varies, and the temperature distribution of the adsorption surface S1 is desired. May deviate from the distribution. Therefore, in order to efficiently control the temperature distribution of the attracting surface S1 in the completed electrostatic chuck 100, it is effective to suppress variations in the thickness of the joint portion 30 in the completed electrostatic chuck 100. The variation in the thickness of the joint portion 30 is mainly influenced by the ceramic side joining surface S2 of the ceramic member 10 and the base side joining surface S3 of the base member 20. That is, between the height difference distribution of the ceramic side bonding surface S2 of the ceramic member 10 and the height difference distribution of the base side bonding surface S3 of the base member 20, and the temperature distribution of the attracting surface S1 in the completed electrostatic chuck 100, Correlation is established. Since the metal pre-joining base member 20P is relatively easy to process as compared to the ceramic pre-joining ceramic member 10P, the base-side joining surface S3 has a higher processing accuracy than the ceramic-side joining surface S2. It can be formed in a substantially plane. Hereinafter, in the present embodiment, it is assumed that the base-side joining surface S3 of the base member 20P before joining is a substantially flat surface, and variations in the thickness of the joining portion 30 are mainly caused by the ceramic-side joining surface S2 of the ceramic member 10P before joining. It depends on the height difference distribution.
 そこで、本実施形態では、接合前セラミックス部材10Pのセラミックス側接合面S2の高低差分布と、静電チャック100の完成体における吸着面S1の温度分布との対応関係情報を用いて、S120での高低差分布の測定結果から、静電チャック100の完成体における吸着面S1の温度分布を予測する。対応関係情報は、例えば、接合前セラミックス部材10Pのセラミックス側接合面S2の高低差(以下、単に「セラミックス側接合面S2の高低差」という)と、該高低差に起因する静電チャック100の完成体における吸着面S1の温度差(以下、単に「吸着面S1の温度差」という)との関係である。セラミックス側接合面S2の高低差は、セラミックス側接合面S2上の複数の対象位置について、セラミックス側接合面S2上の所定の基準位置に対する、吸着面S1に略垂直な方向(上下方向)の高低差である。複数の対象点は、例えば上下方向視でセラミックス側接合面S2上に格子状に並ぶ複数の点である。吸着面S1の温度差は、周囲温度(または、基準位置に対応する吸着面S1上の位置の温度)に対する、各対象位置に対応する吸着面S1上の位置の温度の差である。なお、セラミックス側接合面S2の高低差と吸着面S1の温度差との対応関係情報は、例えば、複数の静電チャック100について、接合前セラミックス部材10Pのセラミックス側接合面S2の高低差と、完成体における吸着面S1の温度差とを測定することにより取得することができる。 Therefore, in the present embodiment, by using correspondence information between the height difference distribution of the ceramic-side bonding surface S2 of the ceramic member 10P before bonding and the temperature distribution of the suction surface S1 in the completed electrostatic chuck 100, the information in S120 is used. From the measurement result of the height difference distribution, the temperature distribution of the attracting surface S1 in the completed electrostatic chuck 100 is predicted. The correspondence relationship information includes, for example, the height difference of the ceramic side bonding surface S2 of the pre-bonding ceramic member 10P (hereinafter simply referred to as “the height difference of the ceramic side bonding surface S2”) and the electrostatic chuck 100 caused by the height difference. This is the relationship with the temperature difference of the suction surface S1 in the finished product (hereinafter simply referred to as “temperature difference of the suction surface S1”). The difference in height of the ceramic-side bonding surface S2 is the height in the direction (vertical direction) substantially perpendicular to the suction surface S1 with respect to a predetermined reference position on the ceramic-side bonding surface S2 for a plurality of target positions on the ceramic-side bonding surface S2. It is a difference. The plurality of target points are, for example, a plurality of points arranged in a lattice pattern on the ceramic side bonding surface S2 when viewed in the vertical direction. The temperature difference of the suction surface S1 is the difference in temperature at the position on the suction surface S1 corresponding to each target position with respect to the ambient temperature (or the temperature at the position on the suction surface S1 corresponding to the reference position). The correspondence information between the height difference of the ceramic side bonding surface S2 and the temperature difference of the adsorption surface S1 is, for example, the height difference of the ceramic side bonding surface S2 of the ceramic member 10P before bonding with respect to the plurality of electrostatic chucks 100. It can be obtained by measuring the temperature difference of the suction surface S1 in the finished product.
 図4は、接合前セラミックス部材10Pのセラミックス側接合面S2の高低差と吸着面S1の温度差との対応関係を例示する説明図である。図4から、セラミックス側接合面S2上の位置について、基準位置との高低差が大きいほど、該位置に対応する吸着面S1上の位置の温度と周囲温度(基準位置に対応する位置の温度)との差が大きくなることが分かる。すなわち、セラミックス側接合面S2の高低差が相対的に大きいことは、セラミックス側接合面S2における凹みの深さが相対的に大きいことを意味する。凹みの深さが大きいほど、静電チャック100の完成体において、接合部30の厚さが厚くなり、その結果、セラミックス部材10からベース部材20への熱移動が低下することによって吸着面S1上の温度が相対的に高くなる。 FIG. 4 is an explanatory diagram illustrating the correspondence between the height difference of the ceramic side bonding surface S2 of the pre-bonding ceramic member 10P and the temperature difference of the adsorption surface S1. From FIG. 4, as the height difference between the position on the ceramic side bonding surface S2 and the reference position is larger, the temperature of the position on the suction surface S1 corresponding to the position and the ambient temperature (the temperature of the position corresponding to the reference position). It can be seen that the difference between and increases. That is, the relatively large difference in height of the ceramic side bonding surface S2 means that the depth of the recess in the ceramic side bonding surface S2 is relatively large. As the depth of the dent increases, the thickness of the joint portion 30 in the completed electrostatic chuck 100 increases, and as a result, the heat transfer from the ceramic member 10 to the base member 20 decreases, thereby reducing the surface of the suction surface S1. The temperature of becomes relatively high.
 S120での高低差分布の測定結果から、接合前セラミックス部材10Pのセラミックス側接合面S2の高低差が分かる。このため、セラミックス側接合面S2の高低差と吸着面S1の温度差との対応関係情報を用いて、S120での高低差分布の測定結果から、静電チャック100の完成体における吸着面S1の温度分布を予測することができる。 From the measurement result of the height difference distribution in S120, the height difference of the ceramic side bonding surface S2 of the ceramic member 10P before bonding can be known. For this reason, from the measurement result of the height difference distribution in S120, using the correspondence information between the height difference of the ceramic-side joining surface S2 and the temperature difference of the suction surface S1, the suction surface S1 in the completed electrostatic chuck 100 is measured. The temperature distribution can be predicted.
(静電チャック100の構成の変更工程):
 次に、S130の吸着面S1の温度分布の予測結果に応じて、静電チャック100の構成を変更する(S140)。具体的には、吸着面S1の温度分布が所望の分布(例えば面方向の温度分布が略均一)に近づくように、接合前セラミックス部材10Pと接合前ベース部材20Pと接合部30との少なくとも1つの構成を変更する。変更方法は、公知の方法を用いることができる。具体例は次のとおりである。
(1)吸着面S1の温度分布のばらつきが抑制されるように、接合部30の内部に、熱伝導率が互いに異なる複数の部材を配置する。なお、この方法は、次述する接合前セラミックス部材10Pと接合前ベース部材20Pとの接合工程の際に行う。
(2)吸着面S1の温度分布のばらつきが抑制されるように、接合前セラミックス部材10Pのセラミックス側接合面S2を加工する。例えば、接合部30の厚さのばらつきが抑制されるようにセラミックス側接合面S2を加工する。本実施形態では、セラミックス側接合面S2の高低差分布がより高くなるようにセラミックス側接合面S2を加工する。
(3)吸着面S1の温度分布のばらつきが抑制されるように、接合前ベース部材20Pのベース側接合面S3を加工する。例えば、接合部30の厚さのばらつきが抑制されるようにベース側接合面S3を加工する。
(Change process of the configuration of the electrostatic chuck 100):
Next, the configuration of the electrostatic chuck 100 is changed according to the prediction result of the temperature distribution of the suction surface S1 in S130 (S140). Specifically, at least one of the pre-bonding ceramic member 10P, the pre-bonding base member 20P, and the bonding portion 30 so that the temperature distribution of the suction surface S1 approaches a desired distribution (for example, the temperature distribution in the surface direction is substantially uniform). Change one configuration. As the changing method, a known method can be used. A specific example is as follows.
(1) A plurality of members having different thermal conductivities are arranged inside the joint portion 30 so that variations in the temperature distribution of the adsorption surface S1 are suppressed. This method is performed during the joining process of the pre-joining ceramic member 10P and the pre-joining base member 20P described below.
(2) The ceramic-side bonding surface S2 of the pre-bonding ceramic member 10P is processed so that variations in the temperature distribution of the adsorption surface S1 are suppressed. For example, the ceramic side bonding surface S2 is processed so that the variation in the thickness of the bonding portion 30 is suppressed. In this embodiment, the ceramic side bonding surface S2 is processed so that the height difference distribution of the ceramic side bonding surface S2 becomes higher.
(3) The base-side bonding surface S3 of the base member 20P before bonding is processed so that variations in the temperature distribution of the suction surface S1 are suppressed. For example, the base-side bonding surface S3 is processed so that the variation in the thickness of the bonding portion 30 is suppressed.
(接合前セラミックス部材10Pと接合前ベース部材20Pとの接合工程):
 次に、接合前セラミックス部材10Pと接合前ベース部材20Pとを接合する(S150)。具体的には、接合前セラミックス部材10Pのセラミックス側接合面S2と接合前ベース部材20Pのベース側接合面S3とを、接着剤を介して貼り合わせた状態で、接着剤を硬化させる硬化処理を行うことにより、接合部30を形成する。以上の工程により、上述した構成の静電チャック100の製造が完了する。
(Jointing process between pre-joining ceramic member 10P and pre-joining base member 20P):
Next, the ceramic member 10P before joining and the base member 20P before joining are joined (S150). Specifically, a curing process is performed in which the adhesive is cured in a state where the ceramic-side bonding surface S2 of the ceramic member 10P before bonding and the base-side bonding surface S3 of the base member 20P before bonding are bonded together with an adhesive. By doing so, the joint portion 30 is formed. Through the above steps, the manufacture of the electrostatic chuck 100 having the above-described configuration is completed.
A-3.本実施形態の効果:
 以上説明したように、本実施形態の静電チャック100の製造方法では、接合前セラミックス部材10Pのセラミックス側接合面S2と接合前ベース部材20Pのベース側接合面S3との少なくとも一方の高低差分布を測定する(図3のS120)。次に、接合前セラミックス部材10Pと接合前ベース部材20Pとの接合前に、上記高低差分布の測定結果に基づき、接合前セラミックス部材10Pと接合前ベース部材20Pとを接合した静電チャック100の完成体における吸着面S1の温度分布を予測する(S130)。次に、吸着面S1の温度分布の予測結果に応じて、接合前セラミックス部材10Pと接合前ベース部材20Pと接合部30との少なくとも1つの構成を変更する(S140)。このため、本実施形態の製造方法によれば、接合前セラミックス部材10Pと接合前ベース部材20Pとを接合して静電チャック100を完成させた後に、吸着面S1の温度分布が測定される場合に比べて、静電チャック100の製造工程を簡略化しつつ、吸着面S1の温度分布を制御可能な静電チャック100を提供することができる。以下、具体的に説明する。
A-3. Effects of this embodiment:
As described above, in the method for manufacturing the electrostatic chuck 100 of the present embodiment, the height difference distribution of at least one of the ceramic-side bonding surface S2 of the pre-bonding ceramic member 10P and the base-side bonding surface S3 of the pre-bonding base member 20P. Is measured (S120 in FIG. 3). Next, before joining the pre-joining ceramic member 10P and the pre-joining base member 20P, based on the measurement result of the height difference distribution, the pre-joining ceramic member 10P and the pre-joining base member 20P are joined. The temperature distribution of the suction surface S1 in the finished product is predicted (S130). Next, at least one configuration of the pre-bonding ceramic member 10P, the pre-bonding base member 20P, and the bonding portion 30 is changed according to the prediction result of the temperature distribution of the suction surface S1 (S140). For this reason, according to the manufacturing method of the present embodiment, when the pre-bonding ceramic member 10P and the pre-bonding base member 20P are bonded to complete the electrostatic chuck 100, the temperature distribution of the attracting surface S1 is measured. As compared with the above, it is possible to provide the electrostatic chuck 100 capable of controlling the temperature distribution of the attracting surface S1 while simplifying the manufacturing process of the electrostatic chuck 100. This will be specifically described below.
 図5は、吸着面S1の温度分布と静電チャック100のXZ断面構成とを示す説明図である。図5(A)には、接合前セラミックス部材10Pと接合前ベース部材20Pとの接合の前における吸着面S1の温度分布と、接合前セラミックス部材10P単体のXZ断面構成とが示されている。なお、同図(A)では、静電チャック100のうち、接合前セラミックス部材10P以外の構成は二点鎖線で示されている。図5(B)には、接合前セラミックス部材10Pと接合前ベース部材20Pとの接合の後の静電チャック100の完成体における吸着面S1の温度分布と、静電チャック100のXZ断面構成とが示されている。 FIG. 5 is an explanatory diagram showing the temperature distribution of the attracting surface S1 and the XZ cross-sectional configuration of the electrostatic chuck 100. FIG. 5A shows the temperature distribution of the adsorption surface S1 before joining the pre-joining ceramic member 10P and the pre-joining base member 20P, and the XZ cross-sectional configuration of the pre-joining ceramic member 10P alone. In FIG. 2A, the configuration of the electrostatic chuck 100 other than the pre-bonding ceramic member 10P is indicated by a two-dot chain line. FIG. 5B shows the temperature distribution of the attracting surface S1 of the completed electrostatic chuck 100 after the bonding of the pre-bonding ceramic member 10P and the pre-bonding base member 20P, and the XZ cross-sectional configuration of the electrostatic chuck 100. It is shown.
 図5(A)に示すように、接合前セラミックス部材10Pのセラミックス側接合面S2は、完全な平面ではなく、凹凸(うねり)が存在する。具体的には、セラミックス側接合面S2のうち、接合前セラミックス部材10Pの吸着面S1上の第1の領域S1Aの直下に位置する部分は凸状になっており、接合前セラミックス部材10Pの吸着面S1上の第2の領域S1Bの直下に位置する部分は凹状になっている。ここで、例えば、接合前セラミックス部材10P単体における吸着面S1の温度分布を測定しても、その測定結果には、接合部30の厚さのばらつきに起因する温度分布への影響が反映されないため、静電チャック100の完成体における吸着面S1の温度分布を測定することはできない。 As shown in FIG. 5 (A), the ceramic-side bonding surface S2 of the pre-bonding ceramic member 10P is not a perfect plane but has irregularities (swells). Specifically, a portion of the ceramic side bonding surface S2 located immediately below the first region S1A on the adsorption surface S1 of the ceramic member 10P before bonding is convex, and the ceramic member 10P before bonding is adsorbed. A portion located immediately below the second region S1B on the surface S1 is concave. Here, for example, even if the temperature distribution of the adsorption surface S1 in the ceramic member 10P before bonding is measured, the measurement result does not reflect the influence on the temperature distribution due to the variation in the thickness of the bonding portion 30. The temperature distribution of the suction surface S1 in the completed electrostatic chuck 100 cannot be measured.
 これに対して、本実施形態の製造方法によれば、接合前セラミックス部材10Pと接合前ベース部材20Pとの接合前に、セラミックス側接合面S2等の高低差分布から、接合部30の厚みのばらつきに起因する静電チャック100の完成体における吸着面S1の温度分布のばらつきを予測する。図5(A)の例では、セラミックス側接合面S2のうち、吸着面S1上の第1の領域S1Aの直下に位置する部分は凸状になっており、吸着面S1上の第2の領域S1Bの直下に位置する部分は凹状になっている。このため、静電チャック100の完成体において、接合部30のうち、第1の領域S1Aの直下に位置する部分の厚さD1は、第2の領域S1Bの直下に位置する部分の厚さD2に比べて薄くなることが分かる。そして、この厚さの大小関係から、吸着面S1において、第1の領域S1Aの温度が相対的に高くなり、第2の領域S1Bの温度が相対的に低くなることを予測できる。 On the other hand, according to the manufacturing method of this embodiment, before joining the pre-joining ceramic member 10P and the pre-joining base member 20P, the thickness of the joint portion 30 is determined from the height difference distribution of the ceramic-side joining surface S2 and the like. A variation in temperature distribution of the attracting surface S1 in the completed electrostatic chuck 100 due to the variation is predicted. In the example of FIG. 5A, a portion of the ceramic side bonding surface S2 located immediately below the first region S1A on the suction surface S1 is convex, and the second region on the suction surface S1. The portion located immediately below S1B is concave. Therefore, in the completed body of the electrostatic chuck 100, the thickness D1 of the portion located immediately below the first region S1A in the joint portion 30 is the thickness D2 of the portion located directly below the second region S1B. It turns out that it becomes thin compared with. And from this magnitude relationship, it can be predicted that the temperature of the first region S1A is relatively high and the temperature of the second region S1B is relatively low on the suction surface S1.
 そして、その吸着面S1の温度分布の予測結果から、接合前セラミックス部材10Pと接合前ベース部材20Pとの接合前または接合の際に、吸着面S1の温度ばらつきを抑制するように静電チャック100の構成を変更することができる。具体的には、図5(B)の例では、接合部30のうち、第1の領域S1Aの直下に位置する部分に、熱伝導率が接合部30の熱伝導率に比べて低い第1の部材32が埋設され、第2の領域S1Bの直下に位置する部分に、熱伝導率が接合部30の熱伝導率に比べて高い第2の部材34が埋設されている。これにより、静電チャック100の完成体における吸着面S1の温度分布を略均一にすることができる。第1の領域S1Aの直下に位置する部分は、特許請求の範囲における第1の接合部分に相当し、第2の領域S1Bの直下に位置する部分は、特許請求の範囲における第2の接合部分に相当する。 Then, based on the prediction result of the temperature distribution of the suction surface S1, the electrostatic chuck 100 is configured to suppress the temperature variation of the suction surface S1 before or during the joining of the pre-joining ceramic member 10P and the pre-joining base member 20P. The configuration can be changed. Specifically, in the example of FIG. 5B, the first portion having a thermal conductivity lower than the thermal conductivity of the joint portion 30 in the portion located immediately below the first region S <b> 1 </ b> A in the joint portion 30. The second member 34 having a higher thermal conductivity than that of the bonding portion 30 is embedded in a portion located immediately below the second region S1B. Thereby, the temperature distribution of the attracting surface S1 in the completed electrostatic chuck 100 can be made substantially uniform. The portion located immediately below the first region S1A corresponds to the first joint portion in the claims, and the portion located directly below the second region S1B is the second joint portion in the claims. It corresponds to.
B.第2実施形態:
 図6は、第2実施形態における静電チャック100の製造方法を示すフローチャートであり、図7は、第2実施形態における静電チャック100の製造方法の一部の工程を模式的に示す説明図である。第2実施形態の製造方法の工程の内、上述した第1実施形態の製造方法と同一の工程については、同一符号を付すことによって、その説明を省略する。
B. Second embodiment:
FIG. 6 is a flowchart illustrating a method for manufacturing the electrostatic chuck 100 according to the second embodiment, and FIG. 7 is an explanatory diagram schematically illustrating some steps of the method for manufacturing the electrostatic chuck 100 according to the second embodiment. It is. Among the steps of the manufacturing method of the second embodiment, the same steps as those of the manufacturing method of the first embodiment described above are denoted by the same reference numerals, and the description thereof is omitted.
B-1.静電チャック100の製造方法:
(接合前セラミックス部材10Pと複数の接合前ベース部材20Pとの準備工程):
 はじめに、互いに接合される前の接合前セラミックス部材10Pと複数の接合前ベース部材20Pとを準備する(S110a)。接合前セラミックス部材10Pおよび接合前ベース部材20Pの製造方法については、上記第1実施形態で説明した通りである。
B-1. Method for manufacturing electrostatic chuck 100:
(Preparation step of the pre-bonding ceramic member 10P and the plurality of pre-bonding base members 20P):
First, the pre-bonding ceramic member 10P and the plurality of pre-bonding base members 20P before being bonded to each other are prepared (S110a). The manufacturing method of the pre-bonding ceramic member 10P and the pre-bonding base member 20P is as described in the first embodiment.
(セラミックス側接合面S2およびベース側接合面S3の高低差分布の測定工程):
 次に、接合前セラミックス部材10Pのセラミックス側接合面S2の高低差分布と、複数の接合前ベース部材20Pのベース側接合面S3の高低差分布と、をそれぞれ測定する(S120a)。セラミックス側接合面S2およびベース側接合面S3の高低差分布の測定方法は、上記第1実施形態で説明した通りである。
(Measurement process of height difference distribution of ceramic side bonding surface S2 and base side bonding surface S3):
Next, the height difference distribution of the ceramic-side bonding surface S2 of the pre-bonding ceramic member 10P and the height difference distribution of the base-side bonding surfaces S3 of the plurality of pre-bonding base members 20P are measured (S120a). The method for measuring the height difference distribution of the ceramic side bonding surface S2 and the base side bonding surface S3 is as described in the first embodiment.
(吸着面S1の温度分布の予測工程):
 次に、接合前セラミックス部材10Pと接合前ベース部材20Pとを接合する前に、予め、S120での高低差分布の測定結果に基づき、接合前セラミックス部材10Pと複数の接合前ベース部材20Pのそれぞれとを接合した場合(静電チャック100の完成体)における吸着面S1の温度分布を予測する(S130a)。具体的には、上記第1実施形態と同様、接合前セラミックス部材10Pのセラミックス側接合面S2の高低差分布と、静電チャック100の完成体における吸着面S1の温度分布との対応関係情報を用いて、S120aでの高低差分布の測定結果から、静電チャック100の完成体における吸着面S1の温度分布を予測する。また、複数の接合前ベース部材20Pのそれぞれのベース側接合面S3の高低差分布と、静電チャック100の完成体における吸着面S1の温度分布との対応関係情報を用いて、S120aでの高低差分布の測定結果から、静電チャック100の完成体における吸着面S1の温度分布を予測する。
(Prediction process of temperature distribution of adsorption surface S1):
Next, before joining the pre-joining ceramic member 10P and the pre-joining base member 20P, each of the pre-joining ceramic member 10P and the plurality of pre-joining base members 20P based on the measurement results of the height difference distribution in S120 in advance. And the temperature distribution of the attracting surface S1 in the case of joining (a completed body of the electrostatic chuck 100) is predicted (S130a). Specifically, as in the first embodiment, the correspondence information between the height difference distribution of the ceramic-side bonding surface S2 of the pre-bonding ceramic member 10P and the temperature distribution of the suction surface S1 of the completed electrostatic chuck 100 is obtained. Using the measurement result of the height difference distribution in S120a, the temperature distribution of the suction surface S1 in the completed electrostatic chuck 100 is predicted. In addition, using the correspondence information between the height difference distribution of the base-side bonding surfaces S3 of the plurality of base members 20P before bonding and the temperature distribution of the suction surface S1 in the completed electrostatic chuck 100, the height in S120a is determined. From the measurement result of the difference distribution, the temperature distribution of the attracting surface S1 in the completed electrostatic chuck 100 is predicted.
(第3のベース部材の抽出工程):
 次に、接合前セラミックス部材10Pと接合前ベース部材20Pとを接合する前に、予め、S130aでの温度分布の予測結果に応じて、複数の接合前ベース部材20Pの中から、1つの接合前ベース部材20Pを抽出する(S140a)。具体的には、複数の接合前ベース部材20Pの中から、接合前セラミックス部材10Pと接合した静電チャック100の完成体における吸着面S1の温度分布が所望の分布(例えば面方向の温度分布が略均一)に最も近い組み合わせとなる接合前ベース部材20Pを1つ抽出する。なお、本実施形態では、例えば接合前セラミックス部材10Pと接合前ベース部材20Pとの内部構成(ガス経路や導通経路等)の接続の関係上、接合前セラミックス部材10Pと接合前ベース部材20Pとについて、上下方向に沿った軸(Z軸)を中心とする周方向の位置関係は変更不可である。すなわち、接合前セラミックス部材10Pと接合前ベース部材20Pとの周方向の位置関係を変更することによって、吸着面S1の温度分布を所望の分布に近づける方法を採用できない。
(Third base member extraction step):
Next, before bonding the pre-bonding ceramic member 10P and the pre-bonding base member 20P, one of the plurality of pre-bonding base members 20P is pre-bonded according to the prediction result of the temperature distribution in S130a. The base member 20P is extracted (S140a). Specifically, among the plurality of pre-bonding base members 20P, the temperature distribution of the attracting surface S1 in the completed electrostatic chuck 100 bonded to the pre-bonding ceramic member 10P is a desired distribution (for example, a temperature distribution in the surface direction). One pre-joining base member 20P that is the closest combination is extracted. In the present embodiment, for example, the pre-bonding ceramic member 10P and the pre-bonding base member 20P are connected in relation to the connection of the internal structure (gas path, conduction path, etc.) between the pre-bonding ceramic member 10P and the pre-bonding base member 20P. The positional relationship in the circumferential direction around the axis (Z axis) along the vertical direction cannot be changed. That is, it is not possible to employ a method of bringing the temperature distribution of the suction surface S1 closer to a desired distribution by changing the circumferential positional relationship between the pre-bonding ceramic member 10P and the pre-bonding base member 20P.
 図7では、接合前セラミックス部材10Pと、3つの接合前ベース部材20P(20A~20C)とが示されている。3つの接合前ベース部材20A~20Cは、ベース側接合面S3の高低差分布が互いに異なる。そして、各高低差分布の測定結果から、静電チャック100の完成体における吸着面S1の温度分布が所望の分布に最も近い組み合わせは、接合前セラミックス部材10Pと接合前ベース部材20Aとの組み合わせであるため、接合前ベース部材20Aが抽出された。接合前セラミックス部材10Pと、抽出された接合前ベース部材20Aとの組み合わせでは、セラミックス側接合面S2とベース側接合面S3とについて、一方の凹所と他方の凸所とが互いに対向するような凹凸関係になる。このため、接合前セラミックス部材10Pと接合前ベース部材20Aとの組み合わせでは、他の組み合わせ(接合前セラミックス部材10Pと接合前ベース部材20B等)に比べて、静電チャック100の完成体における接合部30の面方向の厚みのばらつきを最も抑制することができる。 FIG. 7 shows a ceramic member 10P before bonding and three base members 20P (20A to 20C) before bonding. The three pre-joining base members 20A to 20C have different height distributions of the base-side joining surface S3. From the measurement results of the respective height difference distributions, the combination in which the temperature distribution of the attracting surface S1 in the completed electrostatic chuck 100 is closest to the desired distribution is a combination of the pre-bonding ceramic member 10P and the pre-bonding base member 20A. Therefore, the base member 20A before joining was extracted. In the combination of the pre-bonding ceramic member 10P and the extracted pre-bonding base member 20A, one recess and the other protrusion are opposed to each other with respect to the ceramic-side bonding surface S2 and the base-side bonding surface S3. It becomes uneven. For this reason, in the combination of the pre-bonding ceramic member 10P and the pre-bonding base member 20A, compared with other combinations (pre-bonding ceramic member 10P and pre-bonding base member 20B, etc.), the bonded portion in the completed electrostatic chuck 100 The variation in the thickness in the 30 plane direction can be most suppressed.
(接合前セラミックス部材10Pと第3のベース部材との接合工程):
 次に、接合前セラミックス部材10Pと、抽出された接合前ベース部材20Aとを接合する(S150a)。具体的には、接合前セラミックス部材10Pのセラミックス側接合面S2と接合前ベース部材20Aのベース側接合面S3とを、接着剤を介して貼り合わせた状態で、接着剤を硬化させる硬化処理を行うことにより、接合部30を形成する。以上の工程により、上述した構成の静電チャック100の製造が完了する。
(Jointing process between ceramic member 10P before joining and third base member):
Next, the pre-joining ceramic member 10P and the extracted pre-join base member 20A are joined (S150a). Specifically, a curing process is performed to cure the adhesive in a state where the ceramic-side bonding surface S2 of the pre-bonding ceramic member 10P and the base-side bonding surface S3 of the pre-bonding base member 20A are bonded together with an adhesive. By doing so, the joint portion 30 is formed. Through the above steps, the manufacture of the electrostatic chuck 100 having the above-described configuration is completed.
B-2.本実施形態の効果:
 以上説明したように、本実施形態の静電チャック100の製造方法では、接合前セラミックス部材10Pのセラミックス側接合面S2と、複数の接合前ベース部材20Pのそれぞれのベース側接合面S3との高低差分布の測定結果(図6のS120a)に基づき、静電チャック100の完成体における吸着面S1の温度分布を予測し(S130a)、その予測結果に応じて、複数の接合前ベース部材20Pの中から、1つの接合前ベース部材20Pを抽出することができる(S140a)。このため、本実施形態の製造方法によれば、接合前セラミックス部材10Pと接合前ベース部材20Pとを接合して静電チャック100を完成させた後に、静電チャック100の吸着面S1の温度分布が測定される場合に比べて、静電チャック100の製造工程を簡略化しつつ、吸着面S1の温度分布を制御可能な静電チャック100を提供することができる。
B-2. Effects of this embodiment:
As described above, in the method of manufacturing the electrostatic chuck 100 according to the present embodiment, the level of the ceramic-side bonding surface S2 of the pre-bonding ceramic member 10P and the base-side bonding surfaces S3 of the plurality of pre-bonding base members 20P is different. Based on the measurement result of the difference distribution (S120a in FIG. 6), the temperature distribution of the attracting surface S1 in the completed electrostatic chuck 100 is predicted (S130a), and the plurality of base members 20P before bonding are determined according to the prediction result. One pre-joining base member 20P can be extracted from the inside (S140a). For this reason, according to the manufacturing method of this embodiment, the temperature distribution of the adsorption surface S1 of the electrostatic chuck 100 is completed after the pre-bonding ceramic member 10P and the pre-bonding base member 20P are bonded to complete the electrostatic chuck 100. As compared with the case where the measurement is performed, it is possible to provide the electrostatic chuck 100 capable of controlling the temperature distribution of the suction surface S1 while simplifying the manufacturing process of the electrostatic chuck 100.
C.変形例:
 本明細書で開示される技術は、上述の実施形態に限られるものではなく、その要旨を逸脱しない範囲において種々の形態に変形することができ、例えば次のような変形も可能である。
C. Variation:
The technology disclosed in the present specification is not limited to the above-described embodiment, and can be modified into various forms without departing from the gist thereof. For example, the following modifications are possible.
 上記各実施形態における静電チャック100の構成は、あくまでも一例であり、種々変形可能である。例えば、セラミックス部材10の内部に、内部電極40とヒータ50との少なくとも1つを備えないとしてもよい。また、静電チャック100は、例えば、セラミックス部材10とベース部材20との間に、金属、セラミックスや樹脂等が配置された構成や、セラミックス部材10とベース部材20との間に、セラミックス部材10の内部に配置されたヒータ50とは別に、ヒータが配置された構成でもよい。 The configuration of the electrostatic chuck 100 in each of the above embodiments is merely an example, and can be variously modified. For example, at least one of the internal electrode 40 and the heater 50 may not be provided inside the ceramic member 10. The electrostatic chuck 100 includes, for example, a structure in which a metal, ceramics, resin, or the like is disposed between the ceramic member 10 and the base member 20, or between the ceramic member 10 and the base member 20. A configuration in which a heater is arranged separately from the heater 50 arranged inside is also possible.
 上記各実施形態における静電チャック100の製造方法は、あくまで一例であり、種々変形可能である。例えば、例えば、第1実施形態において、図3のS120で、ベース部材20のベース側接合面S3の高低差分布、または、接合前セラミックス部材10Pのセラミックス側接合面S2の高低差分布および接合前ベース部材20Pのベース側接合面S3の高低差分布の両方を測定するとしてもよい。また、上記第2実施形態に対して、複数の接合前セラミックス部材10Pと、接合前ベース部材20Pとを準備し、複数の接合前セラミックス部材10Pのそれぞれのセラミックス側接合面S2の高低差分布と、接合前ベース部材20Pのベース側接合面S3の高低差分布との測定結果に基づき、静電チャック100の完成体における吸着面S1の温度分布を予測し、その予測結果に応じて、複数の接合前セラミックス部材の中から、1つの接合前セラミックス部材(接合対象のセラミックス部材)を抽出してもよい。 The manufacturing method of the electrostatic chuck 100 in each of the above embodiments is merely an example, and various modifications can be made. For example, in the first embodiment, in S120 of FIG. 3, the height difference distribution of the base-side joining surface S3 of the base member 20 or the height difference distribution of the ceramic-side joining surface S2 of the ceramic member 10P before joining and before joining. Both the height difference distributions of the base-side joining surface S3 of the base member 20P may be measured. Further, with respect to the second embodiment, a plurality of pre-bonding ceramic members 10P and a pre-bonding base member 20P are prepared, and the height difference distribution of each ceramic-side bonding surface S2 of the plurality of pre-bonding ceramic members 10P and Based on the measurement result with the height difference distribution of the base-side joining surface S3 of the base member 20P before joining, the temperature distribution of the attracting surface S1 in the completed body of the electrostatic chuck 100 is predicted, and according to the prediction result, a plurality of One pre-bonding ceramic member (ceramic member to be bonded) may be extracted from the pre-bonding ceramic members.
 また、本発明は、静電引力を利用してウェハWを保持する静電チャック100に限らず、他の保持装置(真空チャックなど)にも適用可能である。 Further, the present invention is not limited to the electrostatic chuck 100 that holds the wafer W by using electrostatic attraction, but can be applied to other holding devices (such as a vacuum chuck).
10:セラミックス部材 10P:接合前セラミックス部材 20(20A~20C):ベース部材 21:冷媒流路 30:接合部 32:第1の部材 34:第2の部材 40:内部電極 50:ヒータ 100:静電チャック D1,D2:厚さ S1:吸着面 S1A:第1の領域 S1B:第2の領域 S2:セラミックス側接合面 S3:ベース側接合面 W:ウェハ 10: Ceramic member 10P: Ceramic member before joining 20 (20A to 20C): Base member 21: Refrigerant flow path 30: Joining portion 32: First member 34: Second member 40: Internal electrode 50: Heater 100: Static Electric chuck D1, D2: Thickness S1: Suction surface S1A: First region S1B: Second region S2: Ceramic side bonding surface S3: Base side bonding surface W: Wafer

Claims (7)

  1.  第1の方向に略垂直な第1の表面と、前記第1の表面とは反対側の第2の表面と、を有するセラミックス部材と、第3の表面を有し、前記第3の表面が前記セラミックス部材の前記第2の表面側に位置するように配置されたベース部材と、前記セラミックス部材の前記第2の表面と前記ベース部材の前記第3の表面との間に配置され、前記セラミックス部材と前記ベース部材とを接合する接合部と、を備え、前記セラミックス部材の前記第1の表面上に対象物を保持する保持装置の製造方法において、
     前記接合部を介して接合する前の前記セラミックス部材である接合前セラミックス部材と、前記接合部を介して接合する前の前記ベース部材である接合前ベース部材と、を準備する工程と、
     前記接合前セラミックス部材の前記第2の表面と前記接合前ベース部材の前記第3の表面との少なくとも一方の高低差分布を測定する工程と、
     前記接合前セラミックス部材と前記接合前ベース部材とを接合する前に、前記高低差分布の測定結果に基づき、前記接合前セラミックス部材と前記接合前ベース部材とを接合した場合における前記第1の表面の温度分布を予測する工程と、
     前記第1の表面の温度分布の予測結果に応じて、前記接合前セラミックス部材と前記接合前ベース部材と前記接合部との少なくとも1つの構成を変更する工程と、
     を含む、
     ことを特徴とする保持装置の製造方法。
    A ceramic member having a first surface substantially perpendicular to the first direction and a second surface opposite to the first surface; a third surface, wherein the third surface is A base member disposed so as to be positioned on the second surface side of the ceramic member; and the ceramic member disposed between the second surface of the ceramic member and the third surface of the base member. In a manufacturing method of a holding device that includes a bonding portion that bonds a member and the base member, and holds an object on the first surface of the ceramic member,
    Preparing a pre-bonding ceramic member that is the ceramic member before bonding through the bonding portion, and a pre-bonding base member that is the base member before bonding through the bonding portion;
    Measuring a height difference distribution of at least one of the second surface of the ceramic member before bonding and the third surface of the base member before bonding;
    Before joining the ceramic member before joining and the base member before joining, the first surface when the ceramic member before joining and the base member before joining are joined based on the measurement result of the height difference distribution. Predicting the temperature distribution of
    Changing at least one configuration of the pre-bonding ceramic member, the pre-bonding base member, and the bonding portion according to a prediction result of the temperature distribution of the first surface;
    including,
    The manufacturing method of the holding | maintenance apparatus characterized by the above-mentioned.
  2.  請求項1に記載の保持装置の製造方法において、
     前記第1の表面の温度分布の予測結果は、前記第1の表面が、相対的に温度が高い第1の領域と、相対的に温度が低い第2の領域とを含む、
     ことを特徴とする保持装置の製造方法。
    In the manufacturing method of the holding device according to claim 1,
    The prediction result of the temperature distribution of the first surface includes a first region where the first surface has a relatively high temperature and a second region where the temperature is relatively low.
    The manufacturing method of the holding | maintenance apparatus characterized by the above-mentioned.
  3.  請求項2に記載の保持装置の製造方法において、
     前記第1の表面の温度分布の予測結果に応じて、前記接合部のうち、前記第1の方向視で前記第1の領域と重なる第1の接合部分の熱伝導率が、前記接合部のうち、前記第1の方向視で前記第2の領域と重なる第2の接合部分の熱伝導率より高くなるように、前記接合部の構成を変更する、
     ことを特徴とする保持装置の製造方法。
    In the manufacturing method of the holding device according to claim 2,
    According to the prediction result of the temperature distribution of the first surface, the thermal conductivity of the first joint portion that overlaps the first region in the first direction in the joint portion is Among them, the configuration of the joint portion is changed so as to be higher than the thermal conductivity of the second joint portion overlapping the second region in the first direction view.
    The manufacturing method of the holding | maintenance apparatus characterized by the above-mentioned.
  4.  請求項2に記載の保持装置の製造方法において、
     前記接合前セラミックス部材の前記第2の表面のうち、前記第1の方向視で前記第2の領域と重なる部分を加工する、
     ことを特徴とする保持装置の製造方法。
    In the manufacturing method of the holding device according to claim 2,
    Of the second surface of the ceramic member before bonding, a portion that overlaps the second region as viewed in the first direction is processed.
    The manufacturing method of the holding | maintenance apparatus characterized by the above-mentioned.
  5.  請求項2に記載の保持装置の製造方法において、
     前記接合前ベース部材の前記第3の表面のうち、前記第1の方向視で前記第2の領域と重なる部分を加工する、
     ことを特徴とする保持装置の製造方法。
    In the manufacturing method of the holding device according to claim 2,
    Of the third surface of the base member before bonding, a portion that overlaps the second region as viewed in the first direction is processed.
    The manufacturing method of the holding | maintenance apparatus characterized by the above-mentioned.
  6.  第1の方向に略垂直な第1の表面と、前記第1の表面とは反対側の第2の表面と、を有するセラミックス部材と、第3の表面を有し、前記第3の表面が前記セラミックス部材の前記第2の表面側に位置するように配置されたベース部材と、前記セラミックス部材の前記第2の表面と前記ベース部材の前記第3の表面との間に配置され、前記セラミックス部材と前記ベース部材とを接合する接合部と、を備え、前記セラミックス部材の前記第1の表面上に対象物を保持する保持装置の製造方法において、
     前記接合部を介して接合する前の前記セラミックス部材である接合前セラミックス部材と、前記接合部を介して接合する前の前記ベース部材を含む複数の接合前ベース部材と、を準備する工程と、
     前記接合前セラミックス部材の前記第2の表面の高低差分布と、前記複数の接合前ベース部材それぞれの前記第3の表面の高低差分布と、を測定する工程と、
     前記接合前セラミックス部材と前記接合前ベース部材とを接合する前に、前記高低差分布の測定結果に基づき、前記接合前セラミックス部材と前記複数の接合前ベース部材のそれぞれとを接合した場合における前記第1の表面の温度分布を予測する工程と、
     前記第1の表面の温度分布の予測結果に応じて、前記複数の接合前ベース部材の中から、1つの前記接合前ベース部材を抽出する工程と、
     前記接合前セラミックス部材と、抽出された前記接合前ベース部材とを、前記接合部を介して接合する工程と、
     を含む、
     ことを特徴とする保持装置の製造方法。
    A ceramic member having a first surface substantially perpendicular to the first direction and a second surface opposite to the first surface; a third surface, wherein the third surface is A base member disposed so as to be positioned on the second surface side of the ceramic member; and the ceramic member disposed between the second surface of the ceramic member and the third surface of the base member. In a manufacturing method of a holding device that includes a bonding portion that bonds a member and the base member, and holds an object on the first surface of the ceramic member,
    Preparing a pre-bonding ceramic member that is the ceramic member before being bonded via the bonding portion, and a plurality of pre-bonding base members including the base member before being bonded via the bonding portion;
    Measuring the height difference distribution of the second surface of the pre-bonding ceramic member and the height difference distribution of the third surface of each of the plurality of base members before bonding;
    Before joining the ceramic member before joining and the base member before joining, the ceramic member before joining and each of the plurality of base members before joining are joined based on the measurement result of the height difference distribution. Predicting the temperature distribution of the first surface;
    Extracting one of the pre-joining base members from the plurality of pre-joining base members according to a prediction result of the temperature distribution of the first surface;
    Bonding the pre-bonding ceramic member and the extracted pre-bonding base member via the bonding portion;
    including,
    The manufacturing method of the holding | maintenance apparatus characterized by the above-mentioned.
  7.  第1の方向に略垂直な第1の表面と、前記第1の表面とは反対側の第2の表面と、を有するセラミックス部材と、第3の表面を有し、前記第3の表面が前記セラミックス部材の前記第2の表面側に位置するように配置されたベース部材と、前記セラミックス部材の前記第2の表面と前記ベース部材の前記第3の表面との間に配置され、前記セラミックス部材と前記ベース部材とを接合する接合部と、を備え、前記セラミックス部材の前記第1の表面上に対象物を保持する保持装置の製造方法において、
     前記接合部を介して接合する前の前記セラミックス部材を含む複数の接合前セラミックス部材と、前記接合部を介して接合する前の前記ベース部材である接合前ベース部材と、を準備する工程と、
     前記複数の接合前セラミックス部材それぞれの前記第2の表面の高低差分布と、前記接合前ベース部材の前記第3の表面の高低差分布とを測定する工程と、
     前記接合前セラミックス部材と前記接合前ベース部材とを接合する前に、前記高低差分布の測定結果に基づき、前記複数の接合前セラミックス部材のそれぞれと前記接合前ベース部材とを接合した場合における前記第1の表面の温度分布を予測する工程と、
     前記第1の表面の温度分布の予測結果に応じて、前記複数の接合前セラミックス部材の中から、1つの前記接合前セラミックス部材を抽出する工程と、
     抽出された前記接合前セラミックス部材と、前記接合前ベース部材とを、前記接合部を介して接合する工程と、
     を含む、
     ことを特徴とする保持装置の製造方法。
    A ceramic member having a first surface substantially perpendicular to the first direction and a second surface opposite to the first surface; a third surface, wherein the third surface is A base member disposed so as to be positioned on the second surface side of the ceramic member; and the ceramic member disposed between the second surface of the ceramic member and the third surface of the base member. In a manufacturing method of a holding device that includes a bonding portion that bonds a member and the base member, and holds an object on the first surface of the ceramic member,
    Preparing a plurality of pre-bonding ceramic members including the ceramic member before being bonded via the bonding portion, and a pre-bonding base member being the base member before being bonded via the bonding portion;
    Measuring the height difference distribution of the second surface of each of the plurality of pre-bonding ceramic members and the height difference distribution of the third surface of the base member before bonding;
    Before joining the pre-joining ceramic member and the pre-joining base member, based on the measurement result of the height difference distribution, the plurality of pre-joining ceramic members and the pre-joining base member are joined together. Predicting the temperature distribution of the first surface;
    A step of extracting one pre-bonding ceramic member from the plurality of pre-bonding ceramic members according to a prediction result of the temperature distribution of the first surface;
    Bonding the extracted pre-bonding ceramic member and the pre-bonding base member via the bonding portion;
    including,
    The manufacturing method of the holding | maintenance apparatus characterized by the above-mentioned.
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