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WO2019144696A1 - 遮挡盘组件、半导体加工装置和方法 - Google Patents

遮挡盘组件、半导体加工装置和方法 Download PDF

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Publication number
WO2019144696A1
WO2019144696A1 PCT/CN2018/117701 CN2018117701W WO2019144696A1 WO 2019144696 A1 WO2019144696 A1 WO 2019144696A1 CN 2018117701 W CN2018117701 W CN 2018117701W WO 2019144696 A1 WO2019144696 A1 WO 2019144696A1
Authority
WO
WIPO (PCT)
Prior art keywords
platen
shielding
base
workpiece
processed
Prior art date
Application number
PCT/CN2018/117701
Other languages
English (en)
French (fr)
Inventor
李冬冬
郭浩
赵梦欣
Original Assignee
北京北方华创微电子装备有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北京北方华创微电子装备有限公司 filed Critical 北京北方华创微电子装备有限公司
Priority to SG11202006977QA priority Critical patent/SG11202006977QA/en
Priority to KR1020207021459A priority patent/KR102442541B1/ko
Priority to JP2020562811A priority patent/JP7139454B2/ja
Publication of WO2019144696A1 publication Critical patent/WO2019144696A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Definitions

  • Embodiments of the present disclosure are directed to an occlusion disk assembly, a semiconductor processing apparatus, and a method.
  • PVD Physical Vapor Deposition
  • a material source solid or liquid
  • gaseous atoms, molecules or partially ionized into ions under vacuum and passing a low pressure gas (or plasma) process A technique of depositing a film having a specific function on the surface of a substrate.
  • physical vapor deposition technology can be used to deposit not only metal films, alloy films, but also compounds, ceramics, semiconductors, polymer films, and the like.
  • the performance of the physical vapor deposition device itself directly affects the quality and yield of the deposited film layer. As the requirements for the accuracy, quality and yield of various device layers are continuously improved, the performance of the physical vapor deposition device itself is improved. Continuous driving force.
  • a shielding disk assembly includes a connecting member and a shielding platen, wherein
  • the connecting member is configured to move the shielding platen to a position above the base and cover a first position of the supporting surface of the base or a second surface that does not overlap with the supporting surface of the base in a vertical direction position;
  • the edge portion of the shielding platen is located at the first position, and when the base is in the cooling position, the edge portion of the shielding platen is on the workpiece to be processed by the base
  • the edge regions of the surface are in contact.
  • the shutter platen is movably coupled to the connecting member to separate the edge portion from the workpiece being processed when the base is below the cooling position; During the raising of the seat to the cooling position, the base is caused to lift the shielding platen so that the edge portion presses against the edge region of the workpiece to be machined.
  • a positioning hole penetrating the connecting member in a vertical direction is disposed in the connecting member; a positioning convex portion is disposed on an upper surface of the shielding platen, and the positioning convex portion is The positioning holes cooperate to suspend the shielding platen by the positioning protrusion on the connecting member when the base is lower than the cooling position; the base rises to the cooling Positioning and lifting the positioning platen allows the positioning protrusion to move up relative to the positioning hole.
  • the positioning hole is a tapered hole, and the diameter of the tapered hole gradually decreases from top to bottom.
  • the positioning protrusion includes a fitting portion that is tapered, and the outer peripheral wall of the fitting portion and the hole of the tapered hole when the base is lower than the cooling position The walls match.
  • the positioning hole is a through hole, and a step portion is disposed on a hole wall of the through hole; the positioning protrusion includes a fitting portion, when the base is lower than the cooling position, At least a portion of the mating portion is superposed on the step portion.
  • the positioning protrusion further includes a columnar extension, the extension is vertically disposed, and an upper end of the extension is coupled to the mating portion; a lower end of the extension is opposite to the shielding platen Connecting; and, the outer diameter of the extension is smaller than the smallest diameter of the tapered hole.
  • a rotating mechanism is further included, the rotating mechanism comprising:
  • a rotating shaft vertically disposed at one side of the base and connected to the connecting member
  • a driving source for driving the rotating shaft to rotate to enable the connecting member to rotate about the rotating shaft to the first position or the second position.
  • the shutter platen includes a platen body, a lower surface edge region of the platen body is formed with an annular protrusion for the edge portion, the annular protrusion is a closed ring shape, and The circumferential direction of the shielding platen is set; or the annular convex portion includes a plurality of sub-protrusions disposed along a circumferential interval of the shielding platen.
  • the shutter platen includes a platen body, and an outer peripheral wall of the platen body is formed with an annular convex portion that protrudes with respect to a lower surface of the platen body to serve as The edge portion; the annular convex portion is a closed annular shape and disposed along a circumferential direction of the shielding platen; or the annular convex portion includes a plurality of sub-protrusions along which the plurality of sub-protrusions are pressed The circumferential interval setting.
  • the present disclosure also provides a semiconductor processing apparatus including a chamber including a susceptor and the above-described occlusion disk assembly as disclosed;
  • a back blowing pipe is disposed in the base, and the back blowing pipe is configured to pass a back blowing gas to a gap between a supporting surface of the base and a lower surface of the workpiece to be processed;
  • the base is liftable to be movable to the cooling position or the loading or unloading position or the process position; the loading and unloading position is lower than the cooling position; and the process position is higher than the cooling position.
  • the chamber further includes:
  • a limiting ring disposed on the base and surrounding the support surface for defining a position of the workpiece on the base;
  • a shielding ring for shielding a gap between the limiting ring and the shielding member when the base is in the process position; after the base is lowered from the process position, the shielding ring is The shield is supported.
  • a occlusion disk library disposed on one side of the chamber and in communication with an interior of the chamber for positioning the damper platen in the second position The shielding platen is accommodated at the time.
  • the present disclosure further provides a semiconductor processing method for processing a workpiece to be processed by using the above-described semiconductor processing apparatus provided by the present disclosure, the semiconductor processing method comprising:
  • the height of the cooling position is set such that the pedestal can lift the occlusion platen during the rise of the pedestal to the cooling position, And moving the shielding platen upwardly relative to the connecting member movably connected thereto, so that an edge portion of the shielding platen presses an edge region of the upper surface of the workpiece to be processed.
  • the process process includes a physical vapor deposition process.
  • the shielding platen is moved by the connecting member to a second position that does not overlap with the supporting surface of the base in the vertical direction, so that the processed portion can be processed.
  • the surface of the workpiece is completely unobstructed, so that the surface of the workpiece can be completely deposited on the surface of the workpiece during the process; at the same time, the edge portion of the shielding platen is placed at the first position of the support surface covering the base, and the base is When it is in the cooling position, it is in contact with the edge region of the upper surface of the workpiece to be processed carried by the susceptor, so that it can be processed when the backing gas is introduced into the gap between the supporting surface of the pedestal and the lower surface of the workpiece to be processed.
  • the workpiece can be fixed on the pedestal and will not be blown off, so that the workpiece to be processed can be effectively and efficiently cooled, thereby increasing the productivity.
  • Figure 1 is a schematic view of the shielding disk being transferred into the chamber
  • Figure 2 is a schematic view of the shielding disk removed from the chamber
  • Figure 3 is a schematic cross-sectional view of a physical vapor deposition apparatus
  • Figure 4 is a schematic view of a susceptor (without a back blowing pipe);
  • Figure 5 is a schematic cross-sectional view of another physical vapor deposition apparatus
  • FIG. 6A is a schematic cross-sectional view of a shutter assembly in accordance with an embodiment of the present disclosure
  • 6B is a schematic cross-sectional view of the positioning portion of the shielding disk assembly detached from the rotating arm/positioning hole according to an embodiment of the present disclosure
  • FIG. 7A is a schematic cross-sectional view of a shield disk assembly in accordance with an embodiment of the present disclosure.
  • FIG. 7B is a schematic cross-sectional view of a shield disk assembly in accordance with an embodiment of the present disclosure.
  • FIG. 8A is a schematic cross-sectional view of a blind disk assembly in accordance with another embodiment of the present disclosure.
  • FIG. 8B is a schematic cross-sectional view of a shutter disk assembly in accordance with another embodiment of the present disclosure.
  • FIG. 8C is a schematic cross-sectional view of a shutter disk assembly in accordance with another embodiment of the present disclosure.
  • FIG. 9A is a schematic cross-sectional view of a semiconductor processing apparatus according to an embodiment of the present disclosure (the susceptor is located at a process position);
  • FIG. 9B is a schematic view of a susceptor (having a back-blowing line) of a semiconductor processing apparatus according to an embodiment of the present disclosure
  • FIG. 10 is a schematic cross-sectional view of a semiconductor processing apparatus in accordance with an embodiment of the present disclosure (a susceptor is located at a loading and unloading position);
  • FIG 11 is a schematic cross-sectional view of a semiconductor processing apparatus in accordance with an embodiment of the present disclosure (the susceptor is in a cooling position).
  • the support surface of the base may refer to a plane of the base away from the side of the bottom wall of the chamber. Defining the support surface as such a plane better illustrates the positional relationship of other components to the support surface.
  • the susceptor when mounted to the semiconductor processing apparatus, it can be configured to move in a direction perpendicular to the support surface. In the direction perpendicular to the support surface, that is, in the vertical direction, the direction from the opposite side of the support surface of the susceptor to the support surface is referred to as the "upward" direction, from the support surface to the opposite side of the support surface of the susceptor It is called the direction of "down".
  • the workpiece to be processed in the present disclosure may be, for example, a tray for supporting a wafer to be deposited, or a separate wafer to be deposited or a combined structure in which the wafer is attached to the tray, according to an embodiment of the present disclosure. There are no special restrictions.
  • a process gas including an inert gas and a reactive gas is introduced into the process chamber, and a direct current or radio frequency power is applied to the target to excite the gas in the chamber to form a plasma and bombard the target, which is bombarded and sputtered.
  • the target particles fall on the surface of the workpiece to form a film.
  • the target particles are deposited on the surface of the workpiece and deposited on the chamber wall and the like.
  • a process kit is usually added inside the PVD chamber to protect the inner wall of the chamber. In order to ensure the process results, when the deposited film on the process component reaches a certain thickness, it is necessary to open the process chamber and replace the process components therein.
  • the process chamber needs to be kept in a vacuum state. Only when the target or process component is replaced, it will be opened, and after the replacement is completed, the chamber will be restored to a vacuum state.
  • Targets exposed to the atmosphere react with the atmosphere to oxidize their surfaces. Therefore, at the initial stage of chamber recovery, the surface of the target has defects and cannot be used in a normal process.
  • the susceptor can be covered with a Shutter Disk and then subjected to a high temperature aging process to cause defective portions of the surface of the target to be sputtered onto the occlusion disk. After the defective portion is sputtered off, the mask is removed and the normal process can be performed.
  • FIG. 1 is a schematic perspective view of the shielding disk when it is positioned above the base
  • FIG. 2 is a schematic plan view of the shielding disk when it is removed from above the base.
  • the shielding disk 121 is located on the shielding disk bracket 122, and the shielding disk carrier 122 is connected to the bracket rotating shaft 123, and can be rotated around the bracket rotating shaft 123 by the bracket rotating shaft 123. Rotating to enable the shutter disk 121 to move into or out of the chamber 10 along with the shutter tray carrier 122.
  • the shield disk 121 is moved into the chamber 10, it is placed above the susceptor 124 to be able to block the susceptor during the high temperature aging process.
  • a base mounting screw 125 is also shown in Figure 1 a base mounting screw 125.
  • the PVD technology mainly uses an Electro Static Chuck (ESC) or a mechanical chuck to support the workpiece to be processed.
  • ESC Electro Static Chuck
  • the workpiece to be processed generally generates heat, and the heat in the vacuum is difficult to pass.
  • the workpiece to be processed is generally fixed by means of an electrostatic chuck or a mechanical chuck, and the back gas is delivered to the back surface of the workpiece to achieve cooling of the wafer.
  • FIG. 3 shows a schematic cross-sectional view of a DC magnetron sputtering apparatus 1.
  • the DC magnetron sputtering apparatus 1 has a chamber body 100, and a space defined by the chamber body 100 constitutes a chamber 10.
  • the chamber body 100 can include a bottom wall 1001 and a side wall 1002.
  • a susceptor 101 is disposed in the chamber 10, and the susceptor 101 may be disposed on the bottom wall 1001.
  • the base 101 can be a mechanical chuck that carries the workpiece 102 being machined, the base 101 being liftable to be able to rise to the process position or to the loading and unloading position.
  • the shield 104 surrounds the sidewall 1002 of at least a portion of the cavity and is coupled to the sidewall 1002 of the cavity, and can be configured to support the pressure ring 103 as the pedestal 101 descends from the process position.
  • the target 105 is sealed on the vacuum chamber body 100, and the target 105 can be placed on the top of the chamber 10, and can be electrically connected to a DC power source (not shown) disposed outside the chamber 10.
  • the DC power supply can be A bias is provided to the target 105.
  • the insulating material 107 and the target 105 constitute a closed chamber, and the chamber is filled with deionized water 106.
  • the insulating material 107 may be made of a material having high insulating properties, for example, including glass fiber and a resin composite, and further, for example, G10 may be employed.
  • a direct current (DC) power source during sputtering will apply a bias voltage to the target 105 such that it is under negative pressure with respect to the grounded cavity body 100, thereby exciting the argon discharge to generate a plasma and positively charging the plasma.
  • Argon ions are attracted to the negatively biased target 105. When the energy of the argon ions is sufficiently high, the metal atoms escape the surface of the target and deposit on the workpiece 102 to be processed.
  • argon gas is introduced, and other process gases such as nitrogen may be introduced.
  • FIG. 3 Also shown in FIG. 3 is a magnetron 108 and a motor 109 that drives the movement of the magnetron 108.
  • the magnetron 108 is disposed above the target 105, and the surface of the target 105 can be scanned under the driving of the motor 109 to concentrate the plasmas below the target 105.
  • a certain amount of back-blowing gas can be introduced into the back surface of the workpiece 102 by the pipe 110 located at the center of the susceptor 101 during sputtering, and the heat of the workpiece 102 can be transferred to the susceptor 101 by heat conduction of the gas. Thereby cooling of the workpiece 102 to be processed is achieved.
  • the film is deposited at the upper surface edge region of the workpiece 102 during deposition, thereby facilitating the subsequent process (for example, electroplating has an effect, and therefore, the fixing and cooling method of the workpiece 102 to be used in the above PVD apparatus has a large limitation in application. Due to its high cost and technical complexity, the electrostatic chuck cannot be applied to PVD equipment in the packaging field on a large scale.
  • FIG. 4 shows an assembled structure without a back-blown base that allows the film to be deposited on the edge of the wafer.
  • the base 126 can include a base body 1261, a top plate 1262 disposed on the base body 1261. Also shown in FIG. 4 is a stop ring 127 at the edge of the top plate 1262.
  • the base body 1261, the top plate 1262, and the retaining ring 127 can be assembled to support the limit wafer.
  • the wafer can be placed on the top plate 1262 during normal processing.
  • the pedestal 126 is the carrier of the wafer.
  • the top plate 1262 is the uppermost part of the base 126 and can be fixed to the base body 1261 by screws.
  • a stop ring 127 can be secured to the top plate 1262 by screws for defining the position of the wafer on the top 1262.
  • Figure 5 shows a schematic view of the structure of the chamber without back blowing.
  • the edge of the base 116 is provided with a limiting ring 127.
  • the cavity 10 further includes a shielding member 104.
  • the shielding member 104 surrounds the sidewall of at least part of the cavity and is connected to the sidewall of the cavity, and can be configured to support the shielding ring. 128.
  • the shutter ring 128 can be lifted during the rise of the base 126 to the process position and supported by the shield 104 as the base 126 descends from the process position.
  • the occlusion ring 128 is used to shield the gap between the retaining ring 127 and the shield 104 when the pedestal 126 is in the process position.
  • the occlusion ring 128 only acts as a occlusion, and does not press against the edge of the workpiece 102 to be processed, so that the surface of the workpiece 102 can be completely deposited with a film.
  • the workpiece 102 to be processed is placed only on the base 126 and is not fixed, the cooling of the workpiece 102 cannot be achieved by back blowing.
  • the cooling of the workpiece 102 is currently performed by the following method: first, a process step is performed to deposit a film of a certain thickness on the workpiece 102 to be processed; after the temperature of the workpiece 102 is raised, Stop the process step and perform the cooling step, that is, directly fill the chamber with a large amount of gas, so that the chamber pressure reaches 1 Torr or higher, and maintain the heat exchange between the workpiece 102 and the top plate 1262 for a period of time. Cooling of the workpiece 102 to be processed; then withdrawing the gas. The above process steps are continued, and the above cooling step is repeated after the temperature rises, and the cycle is performed to complete the film deposition at a certain temperature.
  • the cooling rate of the aeration cooling is slow, the gas pressure on the back surface of the wafer is at most 1 Torr, and a long-time holding process is required to sufficiently cool the wafer. If it is charged to a higher pressure, the aeration and pumping process will take more time and affect the overall capacity. Moreover, the process overloads the vacuum condensate pump of the chamber, which shortens the regeneration cycle of the vacuum pump.
  • embodiments of the present disclosure provide a shutter disk assembly, a semiconductor processing apparatus, and a method that can deposit a film on all areas of a surface of a workpiece to be processed, and effectively cool the workpiece to be processed, thereby increasing productivity.
  • FIG. 6A illustrates a blind disk assembly 11 provided by an embodiment of the present disclosure, including a connecting member 1112 and a shutter platen 113, wherein the connecting member 1112 is used to move the shutter platen 113 to the base 116 (FIG. 6A) Not shown, referring to the pedestal 116) shown in FIG. 10, and covering the support surface 11601 of the pedestal 116 (not shown in FIG. 6A, refer to the support surface 11601 shown in FIG. 9B) a position L1 (not shown in FIG. 6A, referring to the first position L1 shown in FIG. 11) to enable the defective portion of the surface of the target to be sputtered to the pressure-retaining plate while performing the high-temperature aging process on the target 113 on.
  • the connecting member 1112 is used to move the shutter platen 113 to the base 116 (FIG. 6A) Not shown, referring to the pedestal 116) shown in FIG. 10, and covering the support surface 11601 of the pedestal 116 (not shown in FIG. 6A, refer to
  • the projection of the shutter platen 113 on the support surface 11601 of the base 116 completely covers the support surface 11601.
  • the connecting member 1112 is for moving the shutter platen 113 to a second position L2 that does not overlap the support surface 11601 of the susceptor 116 in the vertical direction (not shown in FIG. 6A, and may refer to the first embodiment shown in FIG. 9A).
  • the two positions L2) are such that the support surface 11601 of the susceptor 116 is not shielded, so that a film can be deposited on the entire surface of the surface of the workpiece to be processed on the bearing surface during the film deposition process.
  • the shutter assembly 11 further includes a rotating mechanism including a rotating shaft 111 and a driving source (not shown), wherein the rotating shaft 111 is vertically disposed at the base 116. One side is connected to the connecting member 1112.
  • the connecting member 1112 is cantilevered.
  • the driving source is for driving the rotation of the rotating shaft 111 to enable the connecting member 1112 to be rotated about the rotating shaft 111 to the first position L1 or the second position L2.
  • FIG. 6A shows the rotational direction of the rotating shaft 111, but in practical applications, the rotational direction of the rotating shaft 111 is not limited to that shown in the drawing.
  • the edge portion E of the shutter platen 113 blocks the edge portion of the platen 113 when the shutter platen 113 is at the first position L1 and the susceptor 116 is at the cooling position (refer to the position of the susceptor 116 shown in FIG. 11).
  • E is in contact with an edge region of the upper surface of the workpiece to be processed placed on the support surface 11601 of the susceptor 116, and a back gas can be introduced into the gap between the support surface 11601 of the susceptor 116 and the lower surface of the workpiece to be processed.
  • a back gas can be introduced into the gap between the support surface 11601 of the susceptor 116 and the lower surface of the workpiece to be processed.
  • the shutter platen 113 includes a platen body having a straight plate shape, and an edge portion of the lower surface 11302 of the platen body is formed with an annular convex portion 1132 serving as the edge portion E at the occlusion pressure.
  • the lower surface 11320 of the annular protrusion 1132 is in contact with the edge region of the upper surface of the workpiece to be processed on the support surface 11601 of the base 116, and is located at The depressed portion 0113 on the inner side of the annular convex portion 1132 does not contact the workpiece 102 to be processed.
  • the formation of the recessed portion 0113 facilitates protecting the upper surface of the workpiece to be processed, thereby avoiding damage to the effective area of the workpiece being processed.
  • the annular convex portion 1132 is a closed annular shape and is disposed along the circumferential direction of the shielding platen 113.
  • the annular convex portion 1132 may also adopt a discontinuous annular structure.
  • the annular convex portion 1132 includes a plurality of sub-protrusions disposed along the circumferential interval of the shielding platen 113.
  • the upper surface 11301 and the lower surface 11302 of the blocking platen 113 may both be planar, but the invention is not limited thereto.
  • the upper surface 11301 and the lower surface 11302 can also be curved or curved.
  • the shutter platen 113 is movably coupled to the connecting member 1112 to be below the cooling position of the base 116 (refer to the position of the base 116 shown in FIG. 10).
  • the edge portion E of the shutter platen 113 i.e., the annular projection 1132
  • the susceptor 116 is held up to shield the platen 113 so that the edge portion E presses against the edge region of the workpiece to be processed. That is, the shutter platen 113 is raised by a certain distance with the susceptor 116, so that the damper platen 113 can press the workpiece to be processed by its own gravity.
  • a positioning hole 1120 penetrating the connecting member 1112 in the vertical direction is disposed in the connecting member 1112; a positioning convex portion 1131 is disposed on the upper surface 11301 of the shielding platen 113, and the positioning convex portion is provided.
  • the positioning projection 1131 cooperates with the positioning hole 1120 to suspend the blocking platen 113 through the positioning protrusion 1131 on the connecting member 1112 when the base 116 is lower than the cooling position; the base 116 rises to the cooling position and holds up the shielding During the pressing of the platen 113, the positioning projection 1131 is allowed to move up relative to the positioning hole 1120.
  • the structure of the above-mentioned activity connection is simple and easy to manufacture.
  • the positioning hole 1120 is a tapered hole, and the diameter of the tapered hole gradually decreases from top to bottom.
  • the size of the positioning convex portion 1131 can be hung on the connecting member 1112 as long as it is larger than the minimum diameter of the tapered hole.
  • the tapered hole has a simple structure, is easy to manufacture, and is convenient for shielding the centering of the platen 113.
  • the positioning protrusion 1131 includes a fitting portion 11311 having a tapered shape.
  • the outer peripheral wall and the tapered hole of the engaging portion 11311 cooperates so that the centering and movable function of the blocking platen 113 can be achieved.
  • the inclination angle of the outer peripheral wall of the engaging portion 11311 is the same as the inclination angle of the hole wall of the tapered hole, thereby facilitating the disengagement of the engaging portion 11311 from the positioning hole 1120, and also for shielding the pressure plate 113 from being positioned in the positioning hole 1120 when falling back.
  • the position of the shielding platen 113 in the positioning hole 1120 can be unique, so that it can be ensured that the blocking platen 113 is not biased when the workpiece is pressed, and the blocking platen 113 is located at the first position L1. Directly above the pedestal 116.
  • the positioning protrusion 1131 further includes an extension 11312.
  • the extension portion 11312 is vertically disposed, and the upper end of the extension portion 11312 is connected to the fitting portion 11311; the lower end of the extension portion 11312 is connected to the shielding platen 113; and the outer diameter of the extension portion 11312 is smaller than the minimum diameter of the rising cone hole to extend The portion 11312 can pass through the tapered hole.
  • extension portion 11312 can be connected to the mating portion 11311 and the shielding platen 113 respectively, such as welding, snapping, screwing, and the like.
  • the positioning hole 1120 is a tapered hole.
  • the present invention is not limited thereto.
  • the positioning hole 1120 can also adopt any other structure.
  • the positioning hole 1120 is A through hole is provided, and a step portion is disposed on the hole wall of the through hole; at least a portion of the fitting portion 11311 is superposed on the step portion when the base is lower than the cooling position.
  • the positioning protrusion 1131 may be located at a center position of the shutter platen 113.
  • the pressure plate body has a straight shape, but the present invention is not limited thereto. In practical applications, as shown in FIG. 7A, in some examples, the pressure plate body may also be It is curved in the shape of a plate, and the curved plate is recessed in a direction away from the support surface 11601 of the susceptor 116.
  • the edge region of the lower surface 11302 of the platen body is formed with the annular convex portion 1132 as the edge portion E, but the present invention is not limited thereto, and in practical applications,
  • the outer peripheral wall of the platen body is formed with an annular convex portion 1132 that protrudes with respect to the lower surface of the platen body to serve as the edge portion E.
  • the platen body has an arcuate plate shape, and the curved plate is recessed toward a direction away from the support surface 11601 of the susceptor 116 to form a recessed portion 0113.
  • the annular convex portion 1132 protrudes in a horizontal direction away from the center of the platen body with respect to the outer peripheral wall of the platen body. Since the platen body has an arcuate plate shape, the lower surface 11320 of the annular projection 1132 is lower than the lower surface 11302 (curved concave surface) of the platen body so as to be in contact with the edge region of the upper surface of the workpiece to be processed.
  • the pressure plate body may also be in the shape of a straight plate, and the annular convex portion 1132 is disposed on the outer peripheral wall of the pressure plate body and protrudes relative to the lower surface of the pressure plate body, which can also realize the workpiece to be processed. The edge regions of the upper surface are in contact.
  • the annular convex portion 1132 is a closed annular shape and is disposed along the circumferential direction of the shielding platen 113.
  • the annular convex portion 1132 includes a plurality of sub-protrusions along the circumferential direction of the blocking platen 113. Interval setting.
  • the shape of the shielding platen 113 is not limited to the case exemplified in the above examples.
  • the shielding platen 113 may further include a conical disk or the like including a concave portion and an edge convex portion as long as the edge portion of the pressure plate 113 is blocked. The edge regions of the upper surface of the workpiece to be processed are in contact with each other, and the remaining portions are not in contact with the workpiece to be processed.
  • the positioning hole 1120 is a tapered hole; the positioning convex portion includes a matching portion.
  • the 11311 and the extension portion 11312 are integrally formed to form a cone. The outer diameter of the cone is gradually reduced from top to bottom.
  • the base 116 is lower than the cooling position, the outer peripheral wall of the engaging portion 11311 and the hole of the tapered hole The wall is completely conformable; the extension 11312 is located below the connecting member 1112 such that the shutter platen 113 can have a certain vertical spacing from the connecting member 1112.
  • the positioning hole 1120 is a through hole; the positioning protrusion 1131 includes a matching portion 11311 and an extension portion 11312, both of which are columnar, wherein the outer diameter of the engaging portion 11311 is larger than the diameter of the through hole.
  • the engaging portion 11311 is stacked on the upper surface of the connecting member 1112; the outer diameter of the extending portion 11312 is smaller than the diameter of the through hole, and the upper end of the extending portion 11312 is connected with the engaging portion 11311, and the lower end of the extending portion 11312 is vertically positioned downward.
  • the hole 1120 is coupled to the shutter platen 113 such that the shutter platen 113 can have a certain vertical spacing from the connecting member 1112.
  • the positioning hole 1120 is a tapered hole;
  • the positioning protrusion 1131 includes a first engaging portion 11311 and a second engaging portion 11312, wherein the first engaging portion 11311 has a column shape and an outer diameter larger than the tapered hole.
  • the maximum diameter, and the first mating portion 11311 is superposed on the upper surface of the connecting member 1112; the second mating portion 11312 has a tapered column shape, and the outer peripheral wall of the upper portion of the second mating portion 11312 when the base 116 is lower than the cooling position
  • the bottom of the second mating portion 11312 is located below the connecting member 1112, and the upper end of the second mating portion 11312 is connected to the first mating portion 11311, and the lower end of the second mating portion 11312 is occluded.
  • the platen 113 is coupled such that the shutter platen 113 can have a certain vertical spacing from the connecting member 1112.
  • the shielding disk assembly provided by the embodiment of the present disclosure can move the shielding platen to a second position that does not overlap with the supporting surface of the base in the vertical direction by the connecting member, so that the surface of the workpiece to be processed can be completely prevented.
  • an embodiment of the present disclosure further provides a semiconductor processing apparatus.
  • the semiconductor processing device can be a physical vapor deposition device.
  • the semiconductor processing apparatus includes a chamber 10 that includes a susceptor 116 and a shield disk assembly 11 provided by any of the above-described embodiments of the present disclosure.
  • the backing pipe 110 is provided with a back blowing pipe 110 for introducing a back blowing gas into a gap between the supporting surface 11601 of the pedestal 116 and the lower surface of the workpiece 102 to be processed;
  • the pedestal 116 is Upliftable, that is, movable in a direction perpendicular to the support surface 11601 to be movable to a cooling position (not shown in FIG. 9A, referring to the position of the pedestal 116 shown in FIG. 11) or loading and unloading position (Fig.
  • the elevating mechanism that can move the susceptor 116 in a direction perpendicular to the support surface 11601 is omitted.
  • the back blowing pipe 110 can be set as needed, and is not limited to the one shown in the drawing, and the back blowing can be realized.
  • the embodiment of the present disclosure is exemplified by the back blowing gas introduced into the back blowing pipe for cooling the workpiece 102 to be processed.
  • the back blowing gas can also be used to heat the workpiece to be processed according to different process requirements. 102.
  • occlusion disk assembly provided by the embodiments of the present disclosure is not limited to application in a physical vapor deposition device, and may also be applied in other semiconductor manufacturing processes.
  • the semiconductor processing apparatus further includes a shutter library 010 disposed on one side of the chamber 10 and in communication with the interior of the chamber 10 for positioning the pressure plate 113 in the second position L2. The cover platen 113 is blocked.
  • the chamber 10 further includes a retaining ring 127, a shield 104, and a blind ring 128, wherein the retaining ring 127 is disposed on the base 116 and surrounds the support surface 11601. Used to define the position of the workpiece 102 being processed on the pedestal 116.
  • the portion of the stop ring 127 that is adjacent to the workpiece 102 being placed on the pedestal 116 can be stepped to facilitate defining the workpiece 102 being machined.
  • the retaining ring 127 When the workpiece 102 is placed in the retaining ring 127, the surface of the workpiece 102 that is remote from the pedestal 116 is completely exposed, that is, the retaining ring 127 does not have any portion that is over the workpiece 102. Thereby, it is advantageous to deposit a film on the entire area of the upper surface of the workpiece 102 to be processed.
  • the occlusion ring 128 is used to shield the gap between the retaining ring 127 and the shield 104 when the pedestal 116 is in the process position; the damper ring 128 is supported by the shield 104 after the pedestal 116 has descended from the process position.
  • a target region is formed by the target 105, the shield 104, the shield ring 128, and the workpiece 102 to be processed, and plasma is generated in the process region.
  • the shield ring 128 and the shield 104 and the like serve to form a relatively closed reaction environment and prevent deposits from contaminating the inner wall of the chamber.
  • the inner diameter of the shutter ring 128 is larger than the diameter of the workpiece 102 to be machined and smaller than the outer diameter of the limit ring 127.
  • the value of the gap between the occlusion ring 128 and the shield 104 can be within a defined range to facilitate separation of the body when the occlusion ring 128 is lifted.
  • the pedestal 116 can include a base body 1161, a top plate 1162 disposed on the base body 1161. Also shown in Figure 9B is a stop ring 127 at the edge of the top plate 1162.
  • the base body 1161, the top plate 1162, and the limit ring 127 can be assembled to support the workpieces 102 that are constrained.
  • the workpiece 102 can be placed over the top plate 1162 during normal processing.
  • the pedestal 116 is a carrier for the workpiece 102 to be machined.
  • the top plate 1162 is the uppermost part of the base 116 and can be fixed to the base body 1161 by screws.
  • the limit ring 127 can be fixed to the top plate 1162 by screws.
  • the semiconductor processing apparatus provided by the embodiment of the present disclosure can make the surface of the workpiece to be completely unobstructed by using the above-mentioned shielding disc assembly provided by the embodiment of the present disclosure, so that the surface of the workpiece to be processed can be deposited on the surface of the workpiece during the process.
  • the back-blowing gas is introduced into the gap between the supporting surface of the base and the lower surface of the workpiece to be processed, it is ensured that the workpiece to be processed can be fixed on the base without being blown, thereby achieving treatment
  • the workpiece is machined for efficient and efficient cooling, which in turn increases productivity.
  • the embodiment of the present disclosure further provides a semiconductor processing method that can process the workpiece 102 to be processed by using the semiconductor processing apparatus provided by any of the above embodiments, but is not limited thereto.
  • the semiconductor processing method includes:
  • the process is stopped, the susceptor 116 is lowered from the process position to the loading and unloading position, and the shutter platen 113 is moved from the second position L2 to the first position L1, and then the susceptor 116 is raised to the cooling position to occlude
  • the edge portion E of the platen 113 is in contact with the edge region of the upper surface of the workpiece 102 carried by the susceptor 116, and then is used between the support surface 11601 of the susceptor 116 and the lower surface of the workpiece 102 to be processed by the back-blowing line 110.
  • the gap passes into the back blowing gas.
  • the back-blowing line 110 is closed, otherwise the workpiece 102 will be blown off.
  • the temperature of the workpiece 102 is rapidly increased. When the upper temperature limit is reached, it is required to switch to cooling. step.
  • the process includes a physical vapor deposition process.
  • the height of the cooling position is set to: during the lifting of the base 116 to the cooling position, the base 116 can lift the shielding platen 113 to make the shielding platen 113 relative to The movable connecting member 1112 is moved upward so that the edge portion E of the shutter platen 113 is pressed against the edge region of the upper surface of the workpiece 102 to be processed.
  • the shutter platen 113 can press the workpiece 102 to be processed by its own gravity.
  • the method further includes utilizing a occlusion pressure when the high temperature aging process is performed after replacing the process components within the chamber 10 (eg, replacing at least one of the shield 104, the cover 108, and the retaining ring 127 within the chamber)
  • the disk 113 blocks the base 116.
  • the shutter platen 113 can integrate the functions of the pressure ring and the shutter, improve the performance of the device, and simplify the structure of the device.
  • the susceptor 116 supports the workpiece 102 to be raised to the process position (as shown in FIG. 9A), and the limit ring 127 limits the left and right positions of the workpiece 102 to be processed, and the occlusion ring 128 is used.
  • the sputtered target for example, metal
  • the sputtered material target 105 is placed above the chamber 10, and at this time, the blocking platen 113 is transferred into the shielding plate library 010 according to the rotation of the rotating shaft 111. in.
  • the back blowing cooling step lowers the susceptor 116 to the loading and unloading position, and the workpiece 102 is lowered to the lower position with the susceptor 116, and then the damper platen 113 is transferred to the workpiece 102 to be processed. Since the loading and unloading position of the base 116 is lower than the cooling position thereof, the base 116 and the blocking platen 113 can be prevented from interfering with each other.
  • the susceptor 116 is raised to the cooling position, and the workpiece 102 is lifted up with the susceptor 116, and the blocking platen 113 is lifted up so that the damper platen 113 is opposed to the connecting member 1112.
  • a certain distance is moved so that the edge portion E of the shielding platen 113 is pressed against the edge region of the upper surface of the workpiece 102.
  • the weight of the blocking platen 113 is pressed against the workpiece 102, and the backing pipe 110 can be used.
  • a back-blowing gas is introduced into a gap between the support surface 11601 of the susceptor 116 and the lower surface of the workpiece 102 to be processed.
  • the weight of the shutter platen 1131 may be greater than the area of the workpiece 102 to be processed by the gas pressure of the back surface thereof.
  • the gas pressure may be a pressure within 7 Torr, but is not limited thereto.
  • the gas is stopped to cause the susceptor 116 to carry the workpiece 102 to be lowered, and the damper platen 113 is also lowered with the susceptor 116 until the damper platen 113 is hung on the connecting member 1112 (as shown in FIG. 10). Show).
  • the shutter platen 113 is transferred into the shutter tray 010, and the susceptor 116 is again raised to the process position (as shown in FIG. 9A) to continue the thin film deposition process.
  • the above-described deposition film step and back-blowing cooling step are carried out in this manner.

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Abstract

本公开提供一种遮挡盘组件、半导体加工装置和方法。该遮挡盘组件包括连接部件和遮挡压盘，其中，连接部件用于使遮挡压盘移动至基座上方，且覆盖基座的支撑面的第一位置，或者在垂直方向上不与基座的支撑面重叠的第二位置；遮挡压盘的边缘部分在遮挡压盘位于第一位置，且基座位于冷却位置时与基座承载的被加工工件上表面的边缘区域相接触。本公开提供的遮挡盘组件，可以在进行工艺时可以使被加工工件表面全部沉积上薄膜；同时可以实现对待加工工件进行有效且高效的冷却，进而可以提高产能。

Description

遮挡盘组件、半导体加工装置和方法 技术领域
本公开的实施例涉及一种遮挡盘组件、半导体加工装置和方法。
背景技术
物理气相沉积(Physical Vapor Deposition，PVD)技术是在真空条件下采用物理方法将材料源(固体或液体)表面气化成气态原子、分子或部分电离成离子，并通过低压气体(或等离子体)过程，在衬底表面沉积具有某种特殊功能的薄膜的技术。目前，利用物理气相沉积技术不仅可以沉积金属膜、合金膜，还可以沉积化合物、陶瓷、半导体、聚合物膜等。
物理气相沉积装置本身的性能直接影响所沉积的膜层的质量和产率等，随着对于各种器件膜层精度、质量以及产率的要求不断提高，对于物理气相沉积装置本身性能的改进有着持续的推动力。
发明内容
根据本公开的一个实施例提供一种遮挡盘组件，包括连接部件和遮挡压盘，其中，
所述连接部件用于使所述遮挡压盘移动至基座上方，且覆盖所述基座的支撑面的第一位置，或者在垂直方向上不与所述基座的支撑面重叠的第二位置；
所述遮挡压盘的边缘部分在所述遮挡压盘位于所述第一位置，且所述基座位于冷却位置时,所述遮挡压盘的边缘部分与所述基座承载的被加工工件上表面的边缘区域相接触。
在一些示例中，所述遮挡压盘与所述连接部件活动连接，以在所述基座 低于所述冷却位置时，使所述边缘部分与所述被加工工件相分离；在所述基座上升至所述冷却位置的过程中，使所述基座托起所述遮挡压盘，从而使所述边缘部分压住所述被加工工件的边缘区域。
在一些示例中，在所述连接部件中设置有沿垂直方向贯通所述连接部件的定位孔；在所述遮挡压盘的上表面设置有定位凸部，并且，所述定位凸部与所述定位孔相配合，以在所述基座低于所述冷却位置时，使所述遮挡压盘通过所述定位凸部吊挂在所述连接部件上；在所述基座上升至所述冷却位置，并托起所述遮挡压盘的过程中，允许所述定位凸部相对于所述定位孔上移。
在一些示例中，所述定位孔为锥孔，且所述锥孔的直径从上到下逐渐减小。
在一些示例中，所述定位凸部包括配合部，所述配合部呈锥状，且在所述基座低于所述冷却位置时，所述配合部的外周壁与所述锥孔的孔壁相配合。
在一些示例中，所述定位孔为直通孔，且在所述直通孔的孔壁上设置有台阶部；所述定位凸部包括配合部，在所述基座低于所述冷却位置时，所述配合部的至少一部分叠置在所述台阶部上。
在一些示例中，所述定位凸部还包括柱状延长部，所述延长部竖直设置，且所述延长部的上端与所述配合部连接；所述延长部的下端与所述遮挡压盘连接；并且，所述延长部的外径小于所述锥孔的最小直径。
在一些示例中，还包括旋转机构，所述旋转机构包括：
旋转轴，竖直设置在所述基座的一侧，且与所述连接部件连接；
驱动源，用于驱动所述旋转轴旋转，以使所述连接部件能够围绕所述旋转轴旋转至所述第一位置或者第二位置。
在一些示例中，所述遮挡压盘包括压盘本体，所述压盘本体的下表面边缘区域形成有环形凸部用作所述边缘部分，所述环形凸部为闭合的环形，且沿所述遮挡压盘的周向设置；或者，所述环形凸部包括多个子凸部，多个子 凸部沿所述遮挡压盘的周向间隔设置。
在一些示例中，所述遮挡压盘包括压盘本体，所述压盘本体的外周壁形成有环形凸部，所述环形凸部相对于所述压盘本体的下表面凸出，以用作所述边缘部分；所述环形凸部为闭合的环形，且沿所述遮挡压盘的周向设置；或者，所述环形凸部包括多个子凸部，多个子凸部沿所述遮挡压盘的周向间隔设置。
作为另一个技术方案，本公开还提供一种半导体加工装置，包括腔室，所述腔室包括基座和如公开提供的上述遮挡盘组件；
所述基座内设有背吹管路，所述背吹管路用于向所述基座的支撑面与所述被加工工件的下表面之间的间隙通入背吹气体；
所述基座是可升降的，以能够移动至所述冷却位置或者装卸位置或者工艺位置；所述装卸位置低于所述冷却位置；所述工艺位置高于所述冷却位置。
在一些示例中，所述腔室还包括：
限位环，设置在所述基座上，且环绕在所述支撑面的周围，用于限定所述被加工工件在所述基座上的位置；
屏蔽件，环绕设置在所述腔室的侧壁内侧；
遮挡环，用于在所述基座位于所述工艺位置时遮挡所述限位环与所述屏蔽件之间的间隙；在所述基座自所述工艺位置下降之后，所述遮挡环由所述屏蔽件支撑。
在一些示例中，还包括遮挡盘库，所述遮挡盘库设置在所述腔室的一侧，且与所述腔室的内部连通，用于在所述遮挡压盘位于所述第二位置时容置所述遮挡压盘。
作为另一个技术方案，本公开还提供一种半导体加工方法，采用如本公开提供的上述半导体加工装置加工被加工工件，所述半导体加工方法包括：
工艺处理步骤，使所述遮挡压盘保持在所述第二位置，并使基座上升至 所述工艺位置，以对所述被加工工件的整个上表面进行工艺处理；
冷却步骤，停止工艺处理，使所述基座自所述工艺位置下降至所述装卸位置，并将所述遮挡压盘从所述第二位置移动至所述第一位置，然后使所述基座上升至所述冷却位置，以使所述遮挡压盘的边缘部分与所述基座承载的被加工工件上表面的边缘区域相接触，然后利用所述背吹管路向所述基座的支撑面与所述被加工工件的下表面之间的间隙通入背吹气体。
在一些示例中，在所述冷却步骤中，所述冷却位置的高度被设置为：在所述基座上升至所述冷却位置的过程中，所述基座能够托起所述遮挡压盘，以使所述遮挡压盘相对于与之活动连接的所述连接部件向上移动，从而使所述遮挡压盘的边缘部分压住所述被加工工件的上表面的边缘区域。
在一些示例中，在所述工艺处理步骤中，所述工艺处理包括物理气相沉积工艺。
本公开实施例提供的遮挡盘组件、半导体加工装置和方法的技术方案中，通过连接部件使遮挡压盘移动至在垂直方向上不与基座的支撑面重叠的第二位置，可以使被加工工件表面完全不被遮挡，从而在进行工艺时可以使被加工工件表面全部沉积上薄膜；同时，遮挡压盘的边缘部分在遮挡压盘位于覆盖基座的支撑面的第一位置，且基座位于冷却位置时与基座承载的被加工工件上表面的边缘区域相接触，从而可以在向基座的支撑面与被加工工件的下表面之间的间隙通入背吹气体时，保证被加工工件能够固定在基座上，不会被吹飞，从而可以实现对待加工工件进行有效且高效的冷却，进而可以提高产能。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。
图1为遮挡盘转入腔室的示意图；
图2为遮挡盘从腔室移出的示意图；
图3为一种物理气相沉积装置的截面示意图；
图4为一种基座(无背吹管路)的示意图；
图5为另一种物理气相沉积装置的截面示意图；
图6A为根据本公开一实施例的遮挡盘组件的截面示意图；
图6B为根据本公开一实施例的遮挡盘组件的定位部脱离旋转臂/定位孔的截面示意图；
图7A为根据本公开一实施例的遮挡盘组件的截面示意图；
图7B为根据本公开一实施例的遮挡盘组件的截面示意图；
图8A为根据本公开另一实施例的遮挡盘组件的截面示意图；
图8B为根据本公开另一实施例的遮挡盘组件的截面示意图；
图8C为根据本公开另一实施例的遮挡盘组件的截面示意图；
图9A为根据本公开一实施例的半导体加工装置的截面示意图(基座位于工艺位置)；
图9B为根据本公开一实施例的半导体加工装置的基座(具有背吹管路)的示意图；
图10为根据本公开一实施例的半导体加工装置的截面示意图(基座位于装卸位置)；以及
图11为根据本公开一实施例的半导体加工装置的截面示意图(基座位于冷却位置)。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发 明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其它实施例，都属于本发明保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。
下面就根据本发明公开的一些实施例进行进一步详细的说明。在本发明公开的说明书中，基座的支撑面可指基座的远离腔室底壁一侧的平面。将支撑面定义为这样的平面，可更好地说明其他部件与该支撑面的位置关系。另外，在基座安装在半导体加工装置时，其可以被配置为在沿垂直于该支撑面的方向上运动。在垂直于支撑面的方向，即垂直方向上，从基座的支撑面的相反侧到支撑面的方向称为向“上”的方向，从支撑面到基座的支撑面的相反侧的方向称为向“下”的方向。由此，利用“上”和“下”、或者“顶”和“底”修饰的各种位置关系有了清楚的含义。例如，上表面、下表面、上升、下降、顶壁和底壁。又例如，对于被加工工件的两个表面来讲，其背离基座的表面称为“上表面”，其面对基座的表面称为“下表面”。另外，在沿平行于所述支撑面的方向，即水平方向上，从所述基座的边缘指向中心的方向称为向“内”的方向，从所述基座中心指向边缘的方向称为向“外”的方向。因此，利用“内”和“外”修饰的相对位置关系也有了清楚的含义。例如，“内侧”和“外侧”。另外，需要注意的是，以上表示方位的术语仅仅是示例性的且表示各个部件的相位位置关系，对于本发明公开的各种装置或设备中的零件组合或整个装置或设备 可以整体上旋转一定的角度。
在本发明公开中的被加工工件例如可以是用于支撑待沉积晶片的托盘、也可以是单独的待沉积晶片或者是晶片贴附在托盘上的组合结构，根据本发明公开的实施例对此没有特别限制。
PVD工艺中，将包括惰性气体和反应气体的工艺气体通入工艺腔室内，并对靶材施加直流或射频功率，以激发腔室内的气体形成等离子体并轰击靶材，被轰击溅射下来的靶材粒子落在被加工工件表面形成薄膜。靶材粒子在沉积到被加工工件表面的同时，也会沉积到腔室壁等部件上。为了防止溅射材料直接沉积到腔室壁等部件上，通常在PVD腔室内部增加工艺组件(Process Kit)对腔室内壁进行保护。为保证工艺结果，当工艺组件上的沉积膜达到一定厚度时，需要打开工艺腔室，对其内的工艺组件进行更换。
工艺腔室需要一直保持真空状态，只有更换靶材或者工艺组件时，才会将其打开，完成更换后，再将腔室恢复真空状态。而暴露在大气中的靶材会与大气发生反应，使其表面被氧化。因此在腔室恢复初期，靶材的表面存在缺陷，不能用于正常的工艺。通常，可采用遮挡盘(Shutter Disk)将基座遮住，然后进行高温老化(Burn in)工艺，使靶材表面的缺陷部分被溅射到遮挡盘上。待缺陷部分被溅射掉之后，将遮挡盘移走，即可进行正常工艺。
图1和图2分别示出了遮挡盘被移入腔室和移出腔室的示意图。图1为遮挡盘位于基座上方时的立体示意图；图2为遮挡盘从基座上方移开时的俯视示意图。如图1和图2所示，遮挡盘121位于遮挡盘托架122上，遮挡盘托架122与托架旋转轴123连接，并可在托架旋转轴123的带动下围绕托架旋转轴123旋转，以能够使遮挡盘121随遮挡盘托架122一起移入或移出腔室10。遮挡盘121移入腔室10后，位于基座124上方，以能够在进行高温老化工艺时，遮挡基座。图1中还示出了基座安装螺钉125。
PVD技术主要采用静电卡盘(Electro Static Chuck，ESC)或机械卡盘对 被加工工件进行支撑。在对晶片进行PVD工艺的过程中，被加工工件一般都会发热，真空中的热量很难传递出去。为了导出被加工工件中的热量，一般采用静电卡盘或者机械卡盘的方式实现被加工工件的固定，同时向被加工工件的背面输送背吹气体，以实现对晶片的冷却。
图3示出了一种直流磁控溅射装置1的截面示意图。该直流磁控溅射装置1具有腔室本体100，该腔室本体100所限定的空间构成腔室10。例如，腔室本体100可包括底壁1001和侧壁1002。腔室10内设有基座101，基座101可设置在底壁1001上。基座101可为承载被加工工件102的机械卡盘，该基座101是可升降的，以能够上升至工艺位置或者下降至装卸位置。在基座101位于工艺位置时，使用具有一定重量的压环(Cover Ring)103压住被加工工件102的上表面边缘区域，以采用机械的方式将被加工工件102固定在基座101上进行溅射工艺。屏蔽件104环绕在至少部分腔体的侧壁1002内且连接到腔体的侧壁1002，可被配置为在基座101自工艺位置下降时支撑压环103。靶材105被密封在真空腔室本体100上，靶材105可放置在腔室10的顶部，并可与设置在腔室10外部的直流电源(图中未示出)电连接，直流电源可向靶材105提供偏压。绝缘材料107和靶材105构成封闭的腔室，且在该腔室内充满去离子水106，绝缘材料107可采用高绝缘性能的材料，例如包括玻璃纤维和树脂复合材料，进一步例如可采用G10。溅射时直流(DC)电源会施加偏压至靶材105，使其相对于接地的腔体本体100为负压，从而激发氩气放电而产生等离子体，并将等离子体中带正电的氩离子吸引至负偏压的靶材105。当氩离子的能量足够高时，会使金属原子逸出靶材表面并沉积在被加工工件102上。以上是以通入氩气为例进行说明，也可以通入氮气等其他工艺气体。图3中还示出了磁控管108和驱动磁控管108运动的电机109。磁控管108设置在靶材105的上方，可在电机109的驱动下扫描靶材105的表面，从而将等离体子聚集在靶材105的下方。
另外，溅射时可通过位于基座101的中心的管道110向被加工工件102的背面通入一定量的背吹气体，使被加工工件102的热量通过气体热传导的方式传递给基座101，从而实现对被加工工件102的冷却。
但是在封装领域的PVD设备中，由于压环103压住被加工工件102的上表面边缘区域，这使得在沉积时，薄膜沉积不到被加工工件102的上表面边缘区域，从而对后续工艺(如电镀)产生影响，因此，上述PVD设备所采用的被加工工件102的固定和冷却方式在应用上具有较大的局限性。而静电卡盘由于其高昂的成本及技术复杂性也无法大规模应用到封装领域的PVD设备中。
图4示出了一种无背吹基座装配结构图，这种无背吹基座结构可以使得晶片边缘沉积薄膜。基座126可包括基座主体1261、设置在基座主体1261上的顶板1262。图4中还示出了位于顶板1262边缘的限位环127。基座主体1261、顶板1262和限位环127可装配在一起以支撑限位晶片。正常工艺时候，晶片可放在顶板1262上。基座126是晶片的承载体。顶板1262为基座126最上面的零件，可通过螺钉固定在基座主体1261上。限位环127可通过螺钉固定在顶板1262上，用于限定晶片在顶部1262上的位置。
图5示出了无背吹的腔室结构示意图。基座116的边缘设置限位环127，腔室10内还包括屏蔽件104，屏蔽件104环绕在至少部分腔体的侧壁内且连接到腔体的侧壁，可被配置为支撑遮挡环128。遮挡环128可在基座126上升至工艺位置的过程中被顶起，当基座126自工艺位置下降时，由屏蔽件104支撑。遮挡环128用于在基座126位于工艺位置时遮挡限位环127与屏蔽件104之间的间隙，有关遮挡环128的具体结构，将在其后做详细描述。在正常工艺过程中，遮挡环128只起到遮挡作用，而不会压住被加工工件102的边缘，保证被加工工件102的表面能够全部沉积上薄膜。但是由于被加工工件102仅放置于基座126上，而未被固定，从而无法利用背吹实现被加工工 件102的冷却。为了解决该类腔室冷却的问题，目前对被加工工件102的冷却采用下述方法实现：首先进行工艺步骤，以在被加工工件102上沉积一定厚度的薄膜；被加工工件102温度上升后，停止工艺步骤，进行冷却步骤，即：直接向腔室内充入大量气体，使腔室压力达到1托甚至更高，保持一段时间，使被加工工件102与顶板1262之间进行热交换，从而实现对被加工工件102的冷却；然后抽走气体。继续进行上述工艺步骤，温度上升后重复上述冷却步骤，如此循环来完成一定温度下的薄膜沉积。
但是，在上述半导体加工方法中，充气冷却的冷却速度较慢，晶片背面的气体压力最多达到1托，而且需要长时间的保持过程，使晶片充分冷却。若充到更高的压力，则充气和抽气过程要耗费更多时间，影响整体产能。而且该过程使腔室的真空冷凝泵负载过大，使真空泵再生周期缩短。
为了解决上述问题，本公开的实施例给出一种可使得被加工工件的表面的全部区域沉积薄膜，并且有效冷却被加工工件，提高产能的遮挡盘组件、半导体加工装置和方法。
图6A示出了本公开的实施例提供的一种遮挡盘组件11，包括连接部件1112和遮挡压盘113，其中，连接部件1112用于使遮挡压盘113移动至基座116(图6A中未示出，可参照图10中示出的基座116)上方，且覆盖该基座116的支撑面11601(图6A中未示出，可参照图9B中示出的支撑面11601)的第一位置L1(图6A中未示出，可参照图11中示出的第一位置L1)，以能够在对靶材进行高温老化工艺时使靶材表面的缺陷部分被溅射到挡压盘113上。具体地，遮挡压盘113在基座116的支撑面11601上的投影完全覆盖支撑面11601。或者，连接部件1112用于使遮挡压盘113移动至在垂直方向上不与基座116的支撑面11601重叠的第二位置L2(图6A中未示出，可参照图9A中示出的第二位置L2)，以使基座116的支撑面11601没有任何遮挡，从而在进行薄膜沉积工艺时，可以使承载面上的被加工工件的表面的全部区 域沉积薄膜。
如图6A所示，一些示例中，遮挡盘组件11还包括旋转机构，该旋转机构包括旋转轴111和驱动源(图中未示出)，其中，旋转轴111竖直设置在基座116的一侧，且与连接部件1112连接。可选的，连接部件1112呈悬臂状。驱动源用于驱动旋转轴111旋转，以使连接部件1112能够围绕旋转轴111旋转至第一位置L1或者第二位置L2。图6A示出了旋转轴111的旋转方向，但是在实际应用中，旋转轴111的旋转方向不限于图中所示。
遮挡压盘113的边缘部分E在遮挡压盘113位于第一位置L1，且基座116位于冷却位置(可参照图11中示出的基座116所在位置)时,遮挡压盘113的边缘部分E与置于基座116的支撑面11601上的被加工工件上表面的边缘区域相接触，可以在向基座116的支撑面11601与被加工工件的下表面之间的间隙通入背吹气体时，保证被加工工件能够固定在基座116上，不会被吹飞，从而可以实现对待加工工件进行有效且高效的冷却，进而可以提高产能。
在本实施例中，遮挡压盘113包括压盘本体，该压盘本体呈直板状，且压盘本体的下表面11302的边缘区域形成有环形凸部1132用作上述边缘部分E，在遮挡压盘113位于第一位置L1，且基座116位于冷却位置时，环形凸部1132的下表面11320与置于基座116的支撑面11601上的被加工工件上表面的边缘区域相接触，而位于环形凸部1132内侧的凹陷部0113不接触被加工工件102。凹陷部0113的形成有利于保护被加工工件的上表面，避免损坏被加工工件的有效区域。
在本实施例中，上述环形凸部1132为闭合的环形，且沿遮挡压盘113的周向设置。当然，在实际应用中，环形凸部1132也可以采用不连续的环形结构，例如：环形凸部1132包括多个子凸部，多个子凸部沿遮挡压盘113的周向间隔设置。
如图6A所示，在一些示例中，为了利于制作并利于减小遮挡压盘113的占用空间，遮挡压盘113的上表面11301和下表面11302可均为平面，但是本发明并不限于此。例如，上表面11301和下表面11302也可为曲面或弧面。
如图6A和6B所示，在一些示例中，遮挡压盘113与连接部件1112活动连接，以在基座116低于冷却位置(可参照图10中示出的基座116所在位置)时，使遮挡压盘113的边缘部分E(即，环形凸部1132)与被加工工件相分离，从而可以使遮挡压盘113仍然能够随连接部件1112一起移动；或者，在基座116上升至冷却位置的过程中，使基座116托起遮挡压盘113，从而使边缘部分E压住被加工工件的边缘区域。也就是说，遮挡压盘113会随基座116上升一定距离，从而遮挡压盘113能够利用自身重力压住被加工工件。
下面对上述遮挡压盘113与连接部件1112活动连接的具体方式进行详细描述。具体地，如图6B所示，在连接部件1112中设置有沿垂直方向贯通连接部件1112的定位孔1120；在遮挡压盘113的上表面11301设置有定位凸部1131，并且，该定位凸部1131与定位孔1120相配合，以在基座116低于冷却位置时，使遮挡压盘113通过定位凸部1131吊挂在连接部件1112上；在基座116上升至冷却位置，并托起遮挡压盘113的过程中，允许定位凸部1131相对于定位孔1120上移。上述活动连接的结构较简单，易于制作。
优选的，上述定位孔1120为锥孔，且该锥孔的直径从上到下逐渐减小。定位凸部1131的尺寸只要大于锥孔的最小直径就能够吊挂在连接部件1112上。锥孔的结构简单，易于制作，而且便于遮挡压盘113的对中。
进一步的，如图6A所示，在一些示例中，定位凸部1131包括配合部11311，该配合部11311呈锥状，在基座116低于冷却位置时，配合部11311的外周壁与锥孔的孔壁相配合，从而可以实现遮挡压盘113的对中和可活动功能。具体来说，配合部11311的外周壁的倾斜角度与锥孔的孔壁的倾斜角 度相同，从而有利于配合部11311脱离定位孔1120，也利于遮挡压盘113在回落时被限定在定位孔1120中，使遮挡压盘113在定位孔1120中的位置能够唯一，从而可以保证在遮挡压盘113压住被加工工件时不压偏，同时有利于遮挡压盘113在位于第一位置L1时位于基座116的正上方。
另外，为了使遮挡压盘113能够与连接部件1112之间具有一定的竖直间距，以允许遮挡压盘113能够被基座116托起并上移，定位凸部1131还包括延长部11312，该延长部11312竖直设置，且延长部11312的上端与配合部11311连接；延长部11312的下端与遮挡压盘113连接；并且，延长部11312的外径小于上升锥孔的最小直径，以使延长部11312能够穿过锥孔。
可选的，延长部11312分别与配合部11311和遮挡压盘113连接的方式可以为焊接、卡扣、螺钉连接等等。
需要说明的是，在本实施例中，上述定位孔1120为锥孔，但是，本发明并不局限于此，在实际应用中，定位孔1120还可以采用其他任意结构，例如，定位孔1120为直通孔，且在该直通孔的孔壁上设置有台阶部；在基座低于冷却位置时，配合部11311的至少一部分叠置在台阶部上。
如图6B所示，在一些示例中，为了利于遮挡压盘113在静止或旋转时保持平衡，定位凸部1131可位于遮挡压盘113的中心位置处。
需要说明的是，在本实施例中，压盘本体呈直板状，但是，本发明并不局限于此，在实际应用中，如图7A所示，在一些示例中，压盘本体也可以呈弧形板状，且该弧形板朝向远离基座116的支撑面11601的方向凹陷。
还需要说明的是，在本实施例中，压盘本体的下表面11302的边缘区域形成有环形凸部1132用作上述边缘部分E，但是，本发明并不局限于此，在实际应用中，如图7B所示，在一些示例中，压盘本体的外周壁形成有环形凸部1132，该环形凸部1132相对于压盘本体的下表面凸出，以用作边缘部分E。具体地，压盘本体呈弧形板状，且该弧形板朝向远离基座116的支撑 面11601的方向凹陷，形成凹陷部0113。环形凸部1132相对于压盘本体的外周壁上向远离压盘本体的中心的水平方向凸出。由于压盘本体呈弧形板状，这使得环形凸部1132的下表面11320低于压盘本体的下表面11302(弧形凹面)，从而能够与被加工工件上表面的边缘区域相接触。当然，在实际应用中，压盘本体也可以呈直板状，环形凸部1132设置在压盘本体的外周壁上，且相对于压盘本体的下表面凸出，这同样可以实现与被加工工件上表面的边缘区域相接触。
在实际应用中，上述环形凸部1132为闭合的环形，且沿遮挡压盘113的周向设置；或者，环形凸部1132包括多个子凸部，多个子凸部沿遮挡压盘113的周向间隔设置。
需要说明的是，遮挡压盘113的形状不限于上述示例列举的情形，例如，遮挡压盘113还可以包括含有凹陷部和边缘凸部的锥形盘等，只要遮挡压盘113的边缘部分与被加工工件上表面的边缘区域相接触，而其余部分不与被加工工件接触即可。
还需要说明的是，上述定位孔1120和定位凸部1131的结构和配合方式不限于上述示例列举的情形，例如，如图8A所示，上述定位孔1120为锥孔；定位凸部包括配合部11311和延长部11312，二者一体成型构成一锥柱，该锥柱的外径由上而下逐渐减小，在基座116低于冷却位置时，配合部11311的外周壁与锥孔的孔壁完全贴合；延长部11312位于连接部件1112的下方，从而使遮挡压盘113能够与连接部件1112之间具有一定的竖直间距。
又如，如图8B所示，上述定位孔1120为直通孔；定位凸部1131包括配合部11311和延长部11312，二者均呈柱状，其中，配合部11311的外径大于直通孔的直径，且配合部11311叠置在连接部件1112的上表面；延长部11312的外径小于直通孔的直径，且延长部11312的上端与配合部11311连接，延长部11312的下端竖直向下穿过定位孔1120，并与遮挡压盘113连接， 从而使遮挡压盘113能够与连接部件1112之间具有一定的竖直间距。
再如，如图8C所示，上述定位孔1120为锥孔；定位凸部1131包括第一配合部11311和第二配合部11312，其中，第一配合部11311呈柱状，其外径大于锥孔的最大直径，且第一配合部11311叠置在连接部件1112的上表面；第二配合部11312呈锥柱状，在基座116低于冷却位置时，第二配合部11312的上部分的外周壁与锥孔的孔壁完全贴合；第二配合部11312的其余部分位于连接部件1112的下方，且第二配合部11312的上端与第一配合部11311连接，第二配合部11312的下端与遮挡压盘113连接，从而使遮挡压盘113能够与连接部件1112之间具有一定的竖直间距。
综上所述，本公开实施例提供的遮挡盘组件，通过连接部件使遮挡压盘移动至在垂直方向上不与基座的支撑面重叠的第二位置，可以使被加工工件表面完全不被遮挡，从而在进行工艺时可以使被加工工件表面全部沉积上薄膜；同时，遮挡压盘的边缘部分在遮挡压盘位于覆盖基座的支撑面的第一位置，且基座位于冷却位置时与基座承载的被加工工件上表面的边缘区域相接触，从而可以在向基座的支撑面与被加工工件的下表面之间的间隙通入背吹气体时，保证被加工工件能够固定在基座上，不会被吹飞，从而可以实现对待加工工件进行有效且高效的冷却，进而可以提高产能。
作为另一个技术方案，本公开的实施例还提供一种半导体加工装置。例如，半导体加工装置可为物理气相沉积装置。
在本实施例中，如图9A所示，半导体加工装置包括腔室10，该腔室10包括基座116和本公开上述任一实施例提供的遮挡盘组件11。其中，基座116内设有背吹管路110，该背吹管路110用于向基座116的支撑面11601与被加工工件102的下表面之间的间隙通入背吹气体；基座116是可升降的，即，可沿垂直于支撑面11601的方向移动，以能够移动至冷却位置(图9A中未示出，可参照图11中示出的基座116所在位置)或者装卸位置(图9A中未 示出，可参照图10中示出的基座116所在位置)或者工艺位置(图9A中示出的基座116所在位置)；该装卸位置低于冷却位置；工艺位置高于冷却位置。本公开的实施例附图中，省略了可以使得基座116沿垂直于支撑面11601的方向移动的升降机构。
需要说明的是，背吹管路110可根据需要设置，不限于图中所示，可实现背吹即可。本公开的实施例以背吹管路中通入的背吹气体用于冷却被加工工件102为例，当然，在实际应用中，根据不同的工艺需要，背吹气体也可以用于加热被加工工件102。
需要说明的是，本公开的实施例提供的遮挡盘组件不限于应用在物理气相沉积装置，也可以应用在其他半导体制造工艺中。
如图9A所示，在一些示例中，半导体加工装置还包括设置在腔室10的一侧并与腔室10的内部连通的遮挡盘库010，用于在遮挡压盘113位于第二位置L2时容置遮挡压盘113。
如图9A所示，在一些示例中，腔室10还包括限位环127、屏蔽件104和遮挡环128，其中，限位环127设置在基座116上，且环绕在支撑面11601的周围，用于限定被加工工件102在基座116上的位置。例如，限位环127靠近放置在基座116上的被加工工件102的部分可为台阶形，以利于限定被加工工件102。在被加工工件102放置在限位环127中时，被加工工件102的远离基座116的表面被完全暴露，也就是说，限位环127并没有任何部分遮盖在被加工工件102的上方。从而，利于在被加工工件102的上表面的全部区域沉积薄膜。
遮挡环128用于在基座116位于工艺位置时遮挡限位环127与屏蔽件104之间的间隙；在基座116自所述工艺位置下降之后，遮挡环128由屏蔽件104支撑。另外，由靶材105、屏蔽件104、遮挡环128和被加工工件102围成一工艺区域，等离子体在此工艺区域产生。遮挡环128与屏蔽件104等起到了 形成相对密闭的反应环境并防止沉积物污染腔室内壁的作用。例如，遮挡环128的内径大于被加工工件102的直径，且小于限位环127的外径。当遮挡环128压在限位环127上，可使得遮挡环128和屏蔽件104之间的间隙的数值在限定范围内以在遮挡环128被顶起时更利于等离体子的密封。
在图9B所示的示例中，示出了基座116和限位环127的立体示意图。基座116可包括基座主体1161、设置在基座主体1161上的顶板1162。图9B中还示出了位于顶板1162边缘的限位环127。基座主体1161、顶板1162和限位环127可装配在一起以支撑限位被加工工件102。正常工艺时候，被加工工件102可放在顶板1162的上方。基座116是被加工工件102的承载体。顶板1162为基座116最上面的零件，可通过螺钉固定在基座主体1161上。限位环127可通过螺钉固定在顶板1162上。
本公开实施例提供的半导体加工装置，其通过采用本公开实施例提供的上述遮挡盘组件，可以使被加工工件表面完全不被遮挡，从而在进行工艺时可以使被加工工件表面全部沉积上薄膜；同时，可以在向基座的支撑面与被加工工件的下表面之间的间隙通入背吹气体时，保证被加工工件能够固定在基座上，不会被吹飞，从而可以实现对待加工工件进行有效且高效的冷却，进而可以提高产能。
作为另一个技术方案，本公开实施例还提供一种半导体加工方法，其可应用上述任一实施例提供的半导体加工装置加工被加工工件102，但不限于此。该半导体加工方法包括：
工艺处理步骤，使遮挡压盘113保持在第二位置L2，并使基座116上升至工艺位置，以对被加工工件102的整个表面进行工艺处理；
冷却步骤，停止工艺处理，使基座116自工艺位置下降至装卸位置，并将遮挡压盘113从第二位置L2移动至第一位置L1，然后使基座116上升至冷却位置，以使遮挡压盘113的边缘部分E与基座116承载的被加工工件102 上表面的边缘区域相接触，然后利用背吹管路110向基座116的支撑面11601与被加工工件102的下表面之间的间隙通入背吹气体。
在工艺处理步骤中，背吹管路110是关闭的，否则会将被加工工件102吹飞，薄膜沉积过程中，被加工工件102的温度很快升高，当到达温度上限时，需要切换至冷却步骤。
可选的，在上述工艺处理步骤中，工艺处理包括物理气相沉积工艺。
可选的，在上述冷却步骤中，冷却位置的高度被设置为：在基座116上升至冷却位置的过程中，基座116能够托起遮挡压盘113，以使遮挡压盘113相对于与之活动连接的连接部件1112向上移动，从而使遮挡压盘113的边缘部分E压住被加工工件102的上表面的边缘区域。这样，遮挡压盘113能够利用自身重力压住被加工工件102。
在一些示例中，该方法还包括在更换腔室10内的工艺组件(例如更换腔室内的屏蔽件104、盖板108和限位环127至少之一)后进行高温老化工艺时，利用遮挡压盘113遮挡基座116。从而，遮挡压盘113可集成压环和遮挡盘的功能，提升装置的性能并简化装置结构。
以上介绍了根据本公开实施例的半导体加工加工方法中有关冷却过程的步骤，而沉积薄膜等其他步骤则可以参考常规物理气相沉积操作步骤。为了更加清楚地介绍根据本公开实施例的半导体加工方法，下面更详细地介绍适用于该装置的半导体加工方法示例。
沉积薄膜步骤，被加工工件102在进行工艺时，基座116支撑被加工工件102上升至工艺位置(如图9A所示)，限位环127限制被加工工件102的左右位置，遮挡环128用来挡住溅射出的靶材(例如金属)进入腔室气体部位，被溅射材料靶材105放置在腔室10上方，此时遮挡压盘113随着旋转轴111的转动转入遮挡盘库010中。
背吹冷却步骤，如图10所示，将基座116下降至装卸位置，被加工工 件102随着基座116下降到低位，随后将遮挡压盘113转入到被加工工件102上方。由于基座116所处的装卸位置低于其冷却位置，可以避免基座116与遮挡压盘113相互干扰。
上述动作完成后，如图11所示，使基座116上升至冷却位置，被加工工件102随着基座116上升后，顶起遮挡压盘113，使遮挡压盘113相对于连接部件1112上移一定距离，从而使遮挡压盘113的边缘部分E压住被加工工件102的上表面的边缘区域，此时遮挡压盘113的重量压在被加工工件102上，可以利用背吹管路110向基座116的支撑面11601与被加工工件102的下表面之间的间隙通入背吹气体。例如，遮挡压盘1131的重量可大于被加工工件102的面积乘以其背面的气体压力，例如，该气体压力可为7托以内的压力，但不限于此。
冷却完成后，停止通入气体，使基座116载着被加工工件102下降，遮挡压盘113也随着基座116下降，直到遮挡压盘113吊挂在连接部件1112上(如图10所示)。随后，将遮挡压盘113转入遮挡盘库010中，再将基座116再次上升至工艺位置(如图9A所示)，继续薄膜沉积工艺。如此循环进行上述沉积薄膜步骤和背吹冷却步骤。
有以下几点需要说明：
(1)本发明公开实施例附图中，只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计。
(2)在不冲突的情况下，本发明公开同一实施例及不同实施例中的特征可以相互组合。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。

Claims (16)

  1. 一种遮挡盘组件，其特征在于，包括连接部件和遮挡压盘，其中，
    所述连接部件用于使所述遮挡压盘移动至基座上方，且覆盖所述基座的支撑面的第一位置，或者在垂直方向上不与所述基座的支撑面重叠的第二位置；
    所述遮挡压盘的边缘部分在所述遮挡压盘位于所述第一位置，且所述基座位于冷却位置时，所述遮挡压盘的边缘部分与所述基座承载的被加工工件上表面的边缘区域相接触。
  2. 根据权利要求1所述的遮挡盘组件，其特征在于，所述遮挡压盘与所述连接部件活动连接，以在所述基座低于所述冷却位置时，使所述边缘部分与所述被加工工件相分离；在所述基座上升至所述冷却位置的过程中，使所述基座托起所述遮挡压盘，从而使所述边缘部分压住所述被加工工件的边缘区域。
  3. 根据权利要求2所述的遮挡盘组件，其特征在于，在所述连接部件中设置有沿垂直方向贯通所述连接部件的定位孔；在所述遮挡压盘的上表面设置有定位凸部，并且，所述定位凸部与所述定位孔相配合，以在所述基座低于所述冷却位置时，使所述遮挡压盘通过所述定位凸部吊挂在所述连接部件上；在所述基座上升至所述冷却位置，并托起所述遮挡压盘的过程中，允许所述定位凸部相对于所述定位孔上移。
  4. 根据权利要求3所述的遮挡盘组件，其特征在于，所述定位孔为锥孔，且所述锥孔的直径从上到下逐渐减小。
  5. 根据权利要求4所述的遮挡盘组件，其特征在于，所述定位凸部包 括配合部，所述配合部呈锥状，且在所述基座低于所述冷却位置时，所述配合部的外周壁与所述锥孔的孔壁相配合。
  6. 根据权利要求3所述的遮挡盘组件，其特征在于，所述定位孔为直通孔，且在所述直通孔的孔壁上设置有台阶部；所述定位凸部包括配合部，在所述基座低于所述冷却位置时，所述配合部的至少一部分叠置在所述台阶部上。
  7. 根据权利要求5或6所述的遮挡盘组件，其特征在于，所述定位凸部还包括柱状延长部，所述延长部竖直设置，且所述延长部的上端与所述配合部连接；所述延长部的下端与所述遮挡压盘连接；并且，所述延长部的外径小于所述锥孔的最小直径。
  8. 根据权利要求3所述的遮挡盘组件，其特征在于，还包括旋转机构，所述旋转机构包括：
    旋转轴，竖直设置在所述基座的一侧，且与所述连接部件连接；
    驱动源，用于驱动所述旋转轴旋转，以使所述连接部件能够围绕所述旋转轴旋转至所述第一位置或者第二位置。
  9. 根据权利要求1所述的遮挡盘组件，其特征在于，所述遮挡压盘包括压盘本体，所述压盘本体的下表面边缘区域形成有环形凸部用作所述边缘部分，所述环形凸部为闭合的环形，且沿所述遮挡压盘的周向设置；或者，所述环形凸部包括多个子凸部，多个子凸部沿所述遮挡压盘的周向间隔设置。
  10. 根据权利要求1所述的遮挡盘组件，其特征在于，所述遮挡压盘包括压盘本体，所述压盘本体的外周壁形成有环形凸部，所述环形凸部相对于 所述压盘本体的下表面凸出，以用作所述边缘部分；所述环形凸部为闭合的环形，且沿所述遮挡压盘的周向设置；或者，所述环形凸部包括多个子凸部，多个子凸部沿所述遮挡压盘的周向间隔设置。
  11. 一种半导体加工装置，包括腔室，其特征在于，所述腔室包括基座和如权利要求1-10任一项所述的遮挡盘组件；
    所述基座内设有背吹管路，所述背吹管路用于向所述基座的支撑面与所述被加工工件的下表面之间的间隙通入背吹气体；
    所述基座是可升降的，以能够移动至所述冷却位置或者装卸位置或者工艺位置；所述装卸位置低于所述冷却位置；所述工艺位置高于所述冷却位置。
  12. 根据权利要求11所述的半导体加工装置，其特征在于，所述腔室还包括：
    限位环，设置在所述基座上，且环绕在所述支撑面的周围，用于限定所述被加工工件在所述基座上的位置；
    屏蔽件，环绕设置在所述腔室的侧壁内侧；
    遮挡环，用于在所述基座位于所述工艺位置时遮挡所述限位环与所述屏蔽件之间的间隙；在所述基座自所述工艺位置下降之后，所述遮挡环由所述屏蔽件支撑。
  13. 根据权利要求11所述的半导体加工装置，其特征在于，还包括遮挡盘库，所述遮挡盘库设置在所述腔室的一侧，且与所述腔室的内部连通，用于在所述遮挡压盘位于所述第二位置时容置所述遮挡压盘。
  14. 一种半导体加工方法，其特征在于，采用如权利要求11-13任意一项所述的半导体加工装置加工被加工工件，所述半导体加工方法包括：
    工艺处理步骤，使所述遮挡压盘保持在所述第二位置，并使基座上升至 所述工艺位置，以对所述被加工工件的整个上表面进行工艺处理；
    冷却步骤，停止工艺处理，使所述基座自所述工艺位置下降至所述装卸位置，并将所述遮挡压盘从所述第二位置移动至所述第一位置，然后使所述基座上升至所述冷却位置，以使所述遮挡压盘的边缘部分与所述基座承载的被加工工件上表面的边缘区域相接触，然后利用所述背吹管路向所述基座的支撑面与所述被加工工件的下表面之间的间隙通入背吹气体。
  15. 根据权利要求14所述的半导体加工方法，其特征在于，在所述冷却步骤中，所述冷却位置的高度被设置为：在所述基座上升至所述冷却位置的过程中，所述基座能够托起所述遮挡压盘，以使所述遮挡压盘相对于与之活动连接的所述连接部件向上移动，从而使所述遮挡压盘的边缘部分压住所述被加工工件的上表面的边缘区域。
  16. 根据权利要求14所述的半导体加工方法，其特征在于，在所述工艺处理步骤中，所述工艺处理包括物理气相沉积工艺。
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