WO2018233096A1

WO2018233096A1 - Light emitting diode manufacturing method, and light emitting diode

Info

Publication number: WO2018233096A1
Application number: PCT/CN2017/101818
Authority: WO
Inventors: 程鑫; 陈铭
Original assignee: 南方科技大学
Priority date: 2017-06-21
Filing date: 2017-09-15
Publication date: 2018-12-27
Also published as: CN107275464A

Abstract

A light emitting diode (LED) manufacturing method, and LED. The method comprises: preparing, by means of a micro- and nano-scale processing technique, a base panel having a first micro- and nano-structure (110); preparing, by means of the base panel, a polymer film having a second micro- and nano-structure (120); employing the polymer film to cover silicone dispensed on an LED device (130); and removing the polymer film after the silicone is cured (140). In this way, a structure complementary to the second micro- and nano-structure on the polymer film is formed on a surface of the silicone of the LED device.

Description

Light-emitting diode LED preparation method and LED

Technical field

The present disclosure relates to the field of LED technology, for example, to a method of fabricating an LED and an LED.

Background technique

Light emitting diodes (LEDs) are solid-state semiconductor devices that convert electrical energy into light. White LED has the advantages of small size, high luminous efficiency, long life and environmental protection, and has been widely used in the field of illumination. A commonly used method for obtaining white LEDs is to use a high-energy blue LED chip to excite a yellow phosphor to produce yellow light, which is produced by mixing blue light and yellow light to produce white light. LED is an electro-optical conversion device, so electro-optic conversion efficiency is an important performance parameter of white LED devices. With the large-scale use of white LEDs, the light-emitting efficiency of LEDs in related art is relatively low, and improving the light-emitting efficiency of white LEDs is of great significance for energy conservation and environmental protection.

Therefore, providing a white LED having a higher light extraction efficiency becomes a problem to be solved.

Summary of the invention

The present disclosure provides a method for preparing an LED and an LED to improve the light extraction efficiency of the LED.

In a first aspect, the present disclosure provides a method of fabricating an LED, the method comprising:

Making a mother board having a first micro/nano structure by using micro-nano processing technology;

Making a polymer film having a second micro/nano structure by using the mother board;

The polymer film is coated on the silica gel of the LED device with good silica gel;

After the silica gel is cured, the polymer film is removed to form a structure complementary to the second micro/nano structure on the polymer film on the light-emitting surface of the silica gel of the LED device.

Optionally, before the covering the polymer film on the silica gel of the LED device with good silica gel, the method further includes:

Make LED devices with good silicone.

Optionally, the LED device for making a good silica gel comprises:

Sticking the LED chip on the LED bracket;

Connecting the electrode pins to the LED chip with leads;

Silicone is spotted on the LED chip to form the LED device with the good silica gel.

Optionally, the using the micro-nano processing technology to fabricate a motherboard having a first micro-nano structure includes:

Making an anti-pyramid array structure on a silicon substrate using micro-nano processing techniques; or

An anti-microsphere array structure was fabricated on a quartz substrate using micro-nano processing techniques.

Optionally, the micro-nano processing technique is used to fabricate an anti-pyramid array structure on a silicon substrate, including:

Forming arrayed square holes in a silicon dioxide layer on the silicon substrate by photolithography;

Using the silicon dioxide layer with square holes arranged in an array as a mask, wet etching the silicon substrate in a potassium hydroxide KOH solution to form an anti-pyramid array structure on the silicon substrate;

The silicon dioxide layer on the silicon substrate is removed in a buffered oxide etched BOE solution.

Optionally, the micro-nano processing technique is used to fabricate an anti-microsphere array structure on a quartz substrate, including:

Forming a chromium Cr metal pattern layer on the quartz substrate by a photolithography method and a lift-off technique, the chromium Cr metal pattern layer comprising a circular through hole arranged in an array;

Using the Cr metal pattern layer as a mask, wet etching the quartz substrate in a BOE solution, forming an anti-microsphere array structure on the quartz substrate;

The Cr metal pattern layer on the quartz substrate is removed.

Optionally, the using the mother board to form a polymer film having a second micro/nano structure comprises:

A second micro/nano structure complementary to the first micro/nano structure on the mother substrate is transferred to the polymer film by nanoimprint technology.

Forming a template complementary to the first micro/nano structure of the master by using the mother board;

A second micro/nano structure complementary to the structure on the template is transferred to the polymeric film using a nanoimprint technique, wherein the first micro/nano structure is identical to the second micro-nano structure.

Optionally, the using the motherboard to create a template complementary to the first micro-nano structure of the master comprises:

Depositing a layer of nickel-Ni metal on the mother board having a first micro/nano structure;

Growing the Ni metal layer by an electroplating method;

The electroplated Ni metal layer was peeled off as a Ni template.

The present disclosure also provides a light emitting diode LED, which is prepared by any of the above methods.

The method for preparing a light-emitting diode LED and the LED provided by the present disclosure use a pattern transfer method to form a micro-nano structure on the surface of the silica gel of the LED, and to some extent break the total internal reflection of the light, so that more light can be emitted and the LED is improved. The light output efficiency makes the LED more energy efficient.

DRAWINGS

1 is a schematic flow chart of a method for preparing an LED in the first embodiment;

2A-2F are schematic diagrams showing a process of fabricating an inverse pyramid array structure on a silicon substrate by using a micro-nano processing technique in the first embodiment;

3A-3B are top views of FIG. 2F;

4A-4F are schematic views showing a process of fabricating an anti-microsphere array structure on a quartz substrate by using a micro-nano processing technique in the first embodiment;

5A-5B are top views of FIG. 4F;

6A-6B are schematic views showing a process of transferring an inverse pyramid array structure on a silicon mother substrate onto a polymer film in the first embodiment;

7A-7B are schematic views showing the process of transferring the anti-microsphere array structure on the quartz mother substrate to the polymer film in the first embodiment;

8A-8C are schematic diagrams showing a process of transferring an anti-pyramid array structure on a silicon mother board to a Ni template in the first embodiment;

9A-9C are schematic diagrams showing a process of transferring an anti-microsphere array structure on a quartz mother substrate to a Ni template in the first embodiment;

10A-10C are schematic views showing a process of transferring a micro/nano structure on a Ni template onto a polymer film in the first embodiment;

11A-11B are schematic views showing a process of forming a positive microsphere array structure on a silica gel surface of a single-point silica gel LED device in the first embodiment;

12A-12B are schematic views showing a process of forming a positive microsphere array structure on the surface of a silica gel of an integrated LED device with a good point of silica gel in the first embodiment;

13 is a flow chart of a method for preparing an LED in Embodiment 2;

14A is a schematic structural view of an LED having a positive microsphere array structure on a surface of a silica gel in the third embodiment;

14B is a schematic structural view of an LED having an anti-microsphere array structure on the surface of the silica gel in the third embodiment;

14C is a schematic structural view of an LED having a positive pyramid array structure on the surface of the silica gel in the third embodiment;

14D is a schematic structural view of an LED having an anti-pyramid array structure on the surface of the silica gel in the third embodiment.

Detailed ways

The present disclosure will be described below in conjunction with the accompanying drawings and embodiments. It is to be understood that the embodiments described herein are merely illustrative of the disclosure and are not intended to be limiting. It is also to be noted that, in order to facilitate the description, some but not all of the structures related to the present disclosure are shown in the drawings.

The inventors have found that in the related art, silica gel using point-doped phosphor is applied to a package of a blue LED, and the phosphor layer is spread and solidified in a planar shape, and a large amount of light is limited to the inside of the silica gel due to total internal reflection. . Relative to the air-silicone dielectric layer, only a small portion of the light with a small incident angle can be emitted to the outside. Due to the total reflection of light, the light-emitting efficiency of white LEDs is limited by the use of doped silica gel.

Embodiment 1

FIG. 1 is a schematic flow chart of a method for preparing an LED according to Embodiment 1. As shown in FIG. 1, the method for preparing an LED includes the following steps:

Step 110, using a micro-nano processing technology to fabricate a mother board having a first micro-nano structure;

Making a mother board having a first micro/nano structure by using micro-nano processing technology, comprising: fabricating an anti-pyramid array structure on a silicon substrate by using micro-nano processing technology; or fabricating an anti-microsphere array on a quartz substrate by using micro-nano processing technology structure.

For example, as shown in FIGS. 2A-2F, an anti-pyramid array structure is fabricated on a silicon substrate by using a micro-nano processing technique, including:

Figure 2A, on the silicon substrate 3 with thermal oxidation growth of the silicon dioxide layer 2 is coated with a layer of photoresist 1;

Among them, the thermal oxidation grown silicon dioxide layer 2 was 1 μm, and a layer of about 1 μm of the photoresist 1 was spin-coated on the silicon dioxide layer 2.

2B, a square hole arranged in an array on the photoresist 1 by a photolithography method;

Wherein, a square hole arranged in a matrix or a honeycomb may be formed on the photoresist 1 by a photolithography method.

2C, using the photoresist 1 having an array of square holes as a mask, etching the silicon dioxide layer 2;

2D, removing the photoresist 1;

2A-2D are processes for fabricating square holes having an array arrangement in a silicon dioxide layer 2 on a silicon substrate 3 by a photolithography method, that is, a process of forming a mask on a silicon substrate 3, in this case Using ultraviolet light In order to realize a smaller size micro-nano structure, electron beam lithography can also be selected. Among them, ultraviolet lithography can produce a line width of 5 μm or more, and electron beam lithography can produce a line width of 50 nm or more. . The step of performing photolithography using an electron beam will not be described in detail herein.

2E, using the silicon dioxide layer 2 having square holes arranged in an array as a mask, the silicon substrate 3 is wet-etched in a potassium hydroxide KOH solution to form on the silicon substrate 3. Anti-pyramid array structure;

Among them, the silicon substrate 3 is wet-etched by using the anisotropic property of silicon in the KOH solution to form an anti-pyramid array structure on the silicon substrate 3. The anti-pyramid in this embodiment has a quadrangular pyramid shape.

As shown in FIG. 2F, the silicon dioxide layer 2 on the silicon substrate 3 is removed in a Buffered Oxide Etch (BOE) solution, and thus, a silicon mother substrate having a first micro/nano structure is formed.

A top view of a silicon substrate 3 having an inverse pyramid array structure, that is, a silicon mother substrate is shown in FIGS. 3A-3B. When the photoresist 1 of FIG. 2B has square holes arranged in a matrix, the formed silicon substrate 3 has a matrix. The arranged anti-pyramid structure 31 has a top view as shown in FIG. 3A; when the photoresist 1 in FIG. 2B has a square hole arranged in a honeycomb shape, the formed silicon substrate 3 has a honeycomb-arranged anti-pyramid structure 31, and the top view is as shown in the figure. 3B is shown.

The square square holes in FIGS. 3A and 3B represent a plan view of the inverse pyramid structure 31 on the silicon substrate 3. The side length of the square hole is the side length of the square bottom of the inverse pyramid structure 31, and the length of the side length can be The ratio of the side length to the pitch of the adjacent two holes is from 5 nm to 200 μm, that is, the pitch ranges from 50 nm to 40 μm. Micro-nano processing technology can realize micro-nano structure of this size, and the micro-nano structure of this size can obtain better light-emitting efficiency.

For example, as shown in FIGS. 4A-4F, an anti-microsphere array structure is fabricated on a quartz substrate by using a micro-nano processing technique, including:

Figure 4A, on the quartz substrate 5 is coated with a layer of polymethyl methacrylate (PMMA) 4;

4B, using a photolithography method to form an array of circular holes on the PMMA4;

Among them, a circular hole arranged in a matrix or a honeycomb can be formed on the PMMA 4 by a photolithography method.

4C, the chromium-chromium metal layer 6 is evaporated on the PMMA4 having an array of circular holes;

Figure 4D, using the stripping technique to remove the PMMA4, leaving a Cr metal pattern layer 6 on the quartz substrate 5;

4A-4D are processes for fabricating a Cr metal pattern layer 6 with an array of Cr metal circular hole patterns on an quartz substrate 5 by electron beam lithography and lift-off techniques, that is, forming a mask on the quartz substrate 5. The process of the membrane.

4E, using the Cr metal pattern layer as a mask, wet etching the quartz substrate 5 in a BOE solution, forming an anti-microsphere array structure on the quartz substrate 5;

Wherein, the quartz substrate is wet-etched by using the isotropic property of quartz in the BOE solution to form an anti-microsphere array on the quartz substrate.

As shown in Fig. 4F, the Cr metal pattern layer 6 on the quartz substrate 5 was removed, and a quartz mother substrate having a micro/nano structure was fabricated.

A top view of a quartz substrate 5 having an anti-microsphere array structure, that is, a quartz mother substrate is shown in FIGS. 5A-5B. When PMMA4 has a matrix-arranged circular hole in FIG. 4B, the generated quartz substrate 5 has a matrix arrangement. The anti-microsphere structure 51 is a top view as shown in FIG. 5A; when the PMMA 4 in FIG. 4B has a honeycomb-arranged circular hole, the generated quartz substrate 5 has a honeycomb-arranged anti-microsphere structure 51, and the top view is as shown in FIG. 5B. .

The circular holes in Figs. 5A and 5B represent a plan view of the anti-microsphere structure 51 on the quartz substrate 5, the diameter of which is the diameter of the anti-microsphere structure 51, and the length of the diameter may be selected from 250 nm to 200 μm. The ratio of the diameter to the pitch of adjacent circular holes is 5:1, that is, the pitch ranges from 50 nm to 40 μm. Micro-nano processing technology can realize micro-nano structure of this size, and the micro-nano structure of this size can obtain better light-emitting efficiency.

Step 120: Using the mother board to form a polymer film having a second micro/nano structure.

In one aspect, fabricating a polymer film having a second micro/nano structure using the mother substrate includes: transferring a second micro/nano structure complementary to the first micro/nano structure on the mother board to a high level by using a nanoimprint technique On the molecular film. The polymer material constituting the polymer film includes PMMA, polycarbonate (PC), polyvinyl chloride (PVC), or polyethylene terephthalate (PET).

As shown in FIG. 6A to FIG. 7B, the use of a nanoimprint technique to form a polymer film having a second micro/nano structure using a silicon mother substrate or a quartz mother substrate includes: heating the polymer material constituting the polymer film 8 to a temperature exceeding The glass transition temperature is about 50 ° C to soften the polymer material, and a side of the silicon mother board (shown in FIG. 6A ) or a quartz mother board (shown in FIG. 7A ) having a micro/nano structure is coated on the polymer. On film 8, then With a suitable pressure, usually 5 MPa, the micro/nano structure on the silicon mother plate or quartz mother plate enters the polymer film 8. Then, the temperature is lowered to a normal temperature to cure the polymer film 8, and the pressure on the silicon mother board (as shown in FIG. 6B) or the quartz mother board (as shown in FIG. 7B) is removed, and the anti-pyramid pattern on the silicon mother board or The structure complementary to the anti-microsphere structure on the quartz mother plate is transferred to the polymer film 8. Under this method, the polymer film 8 has a positive pyramid structure (as shown in Fig. 6B) or a positive microsphere structure (as shown in Fig. 7B).

On the other hand, using the mother board to form a polymer film having a second micro/nano structure includes: forming a template complementary to the first micro/nano structure by using the mother board, as shown in FIGS. 8A-9C; using nano-pressure The printing technique transfers a second micro/nano structure complementary to the structure on the template to the polymeric film, as shown in Figures 10A-10C.

A nickel Ni template complementary to its micro/nano structure is fabricated using the silicon master, as shown in FIGS. 8A-8C; a Ni template complementary to its micro/nano structure is fabricated using the quartz master, as shown in FIGS. 9A-9C.

A Ni template complementary to the micro/nano structure is formed by using a silicon mother board, comprising: as shown in FIG. 8A, depositing a layer of Ni metal on the silicon substrate 3 having an inverse pyramid structure; and as shown in FIG. 8B, growing a Ni metal layer by electroplating. 7; as shown in FIG. 8C, the electroplated Ni metal layer 7 is removed, that is, the Ni template 7. At this time, the Ni template 7 has a positive pyramid structure.

A Ni template complementary to the micro/nano structure is formed by using a quartz mother board, including: as shown in FIG. 9A, a layer of Ni metal is deposited on the quartz substrate 5 having an anti-microsphere structure; and FIG. 9B, the Ni metal is grown by electroplating. Layer 7; as shown in FIG. 9C, the electroplated Ni metal layer 7 is removed, that is, the Ni template 7. At this time, the Ni template 7 has a positive microsphere structure.

And transferring a second micro/nano structure complementary to the structure on the Ni template to the polymer film 8 by using a nanoimprint technique, as shown in FIGS. 10A-10C, comprising: as shown in FIG. 10A, using a roll-to-roll nanometer The imprint technique transfers the structure on the Ni template 7 to the polymer film 8 by a heating and pressing method in a rolling mode. Under this method, the polymer film 8 has an anti-pyramid structure (as shown in Fig. 10B) or an anti-microsphere structure (as shown in Fig. 10C).

Step 130, covering the polymer film on the silica gel of the LED device with good silica gel;

Step 140: After the silica gel is cured, the polymer film is removed, and a structure complementary to the second micro/nano structure on the polymer film is left on the surface of the silica gel of the LED device.

Among them, the LED device with good silicone can be a single LED device or an integrated LED device.

For a single LED device, as shown in FIGS. 11A-11B, a polymer film 8 having an inverse microsphere structure will be described as an example. As shown in FIG. 11A, the polymer film 8 having an anti-microsphere structure is covered on the silica gel 9 of the LED device of a single point of silica gel; as shown in FIG. 11B, the LED device is placed in an environment at a temperature of 120 ° C for 2 hours, to be described. After the silica gel 9 is cured, the polymer film 8 is removed, and a structure complementary to the second micro/nano structure on the polymer film 8 is left on the surface of the individual silica gel 9 of the LED device. At this time, the surface of the silica gel 9 of the single LED device is a positive microsphere array structure.

For the integrated LED device, as shown in Figs. 12A-12B, a polymer film 8 having an inverse microsphere structure will be described as an example. As shown in FIG. 12A, the polymer film 8 is covered on the silica gel 9 of the integrated LED device of the spotted silica gel; as shown in FIG. 12B, the LED device is placed in an environment at a temperature of 120 ° C for 2 hours, and the silica gel 9 is cured. Thereafter, the polymer film 8 is removed, and a structure complementary to the second micro/nano structure on the polymer film 8 is left on the surface of the silica gel 9 of the integrated LED device. At this time, the surface of the silica gel 9 of the integrated LED device is a positive microsphere array structure.

Similarly, a polymer film having an anti-pyramid structure is coated on the silica gel of the LED device with a good silica gel, and a positive pyramid array structure is formed on the LED silica gel; a polymer film having a positive pyramid structure is covered on the LED with a good silica gel. On the silica gel of the device, an anti-pyramid array structure is formed on the LED silica gel; a polymer film having a positive microsphere structure is coated on the silica gel of the LED device with a good silica gel, and an anti-microsphere array structure is formed on the LED silica gel.

In the method for preparing the LED of the embodiment, the mother board having the first micro/nano structure is fabricated by micro-nano processing technology, and then the first micro-nano structure on the mother board is transferred onto the polymer film, and finally the polymer film is The pattern is transferred to the surface of the silica gel of the LED to form a micro-nano structure on the surface of the silica gel, which solves the technical problem that the light output of the planar shape of the silica gel faces the low light-emitting rate caused by the total reflection of the light, and improves the light-emitting efficiency of the LED, so that the packaged light is improved. LEDs are more energy efficient. Taking the light output of the blue LED as an example, the silica gel is not doped with phosphor, and the luminous flux of the LED can be improved when the light emitting surface of the silica gel is an anti-pyramid array structure, an anti-microsphere array structure, a positive pyramid array structure or a positive microsphere array structure. About 15%.

Embodiment 2

FIG. 13 is a flow chart of a method for preparing another LED according to the embodiment. The second embodiment is the same as the first embodiment, and the second embodiment is different from the first embodiment in that the steps of fabricating the LED device with good silica gel are added. As shown in FIG. 13, the method includes:

Step 210, using a micro-nano processing technology to fabricate a mother board having a first micro-nano structure;

Step 220, using the mother board to fabricate a polymer film having a second micro/nano structure;

Step 230: fabricating an LED device with a good silica gel;

Step 230 includes: making a single LED device or an integrated LED device with a good silicone. The length and width of a single LED are each several millimeters, for example, the size is 4 mm x 1.4 mm, or the size is 3 mm x 1.4 mm. The silica gel used in the LED device can be selected from silica gel or phosphor-doped silica gel as needed.

Among them, the production of a single LED device with a good silicone, including:

Referring again to FIGS. 11A and 11B, a. solid crystal: the blue LED chip 11 is adhered to the center of the holder base 14 of the LED holder 15 with a solid glue such as silver paste or insulating glue, and the holder base 14 forms a reflective cavity. 13 to improve the light extraction efficiency, and then baked, using silver glue to bake at 150 ° C for 2 hours, or using insulating glue to bake at 150 ° C for 1 hour; b. welding wire: using lead 10 For example, gold wire or aluminum wire, the electrode lead 12 is soldered to the LED chip 11, ball wire is used for ball bonding, or aluminum wire is used for pressure welding; c. dispensing: silicone is spotted on the blue LED chip 11 If the blue LED chip 11 is encapsulated only with silicone, the light emitted by the LED device is blue light; if the yellow phosphor is doped in the silica gel, the light emitted by the LED device is white light.

Optionally, the step of preparing an integrated LED device with a good silica gel comprises: bonding the LED chip to the LED bracket; electrically connecting the electrode pin to the LED chip by using a lead; and tapping the silicone chip on the LED chip To form the LED device with the good silica gel. Illustratively, referring to Figures 12A and 12B, the steps of fabricating an integrated LED device with a good silica gel include: a. solid crystal: using a solid crystal glue on a cleaned printed circuit board (PCB) board (silver glue or insulating glue) correspondingly sticks each LED chip 11 to the center of the holder base 14 of each LED holder 15 on the PCB board, and the holder base 14 forms a reflection cavity 13 to improve light extraction efficiency, and then bakes Bake, use silver glue to bake at 150 ° C for 2 hours, or use insulating glue to bake at 150 ° C for 1 hour; b. Wire: use lead 10, such as gold wire or aluminum wire, will The electrode lead 12 is soldered to the LED chip 11, the gold wire is ball welded, or the aluminum wire is used for pressure welding; c. dispensing: the blue light is printed on the blue LED chip 11, if only the blue LED chip is packaged with the silicone 11, the light emitted by the LED device is blue light; if the yellow phosphor is doped in the silica gel, the light emitted by the LED device is white light.

Step 240, covering the polymer film on the silica gel of the LED device with good silica gel;

Step 250: After the silica gel is cured, the polymer film is removed, and a structure complementary to the second micro/nano structure on the polymer film is left on the surface of the silica gel of the LED device.

The polymer film with micro-nano structure is covered on the silica gel of the LED device, and then the LED device is placed in an environment at a temperature of 120 ° C for 2 hours. After the silica gel is cured, the polymer film is peeled off, and the polymer film is removed. The complementary structure remains on the surface of the silica gel. The fabrication process of an integrated LED device is generally similar to the fabrication process of a single LED device.

If it is a single LED device, after step 250, the LED device can be potted and tested according to actual needs: the LED device is fixed or sealed in a certain cavity by potting glue and tested for product; For the integrated LED device, after step 250, the LED device is also divided, tested, and packaged according to actual needs.

In the technical solution of the embodiment, a mother board having a first micro/nano structure is fabricated by photolithography, and then the first micro/nano structure on the mother board is transferred onto the polymer film, and finally the pattern on the polymer film is transferred to The silica gel surface of the LED forms a micro-nano array structure on the surface of the silica gel, which solves the technical problem that the light emission of the flat surface of the silica gel faces the low light-emitting rate caused by the total reflection of the light, improves the light-emitting efficiency of the LED, and makes the LED after packaging more energy-saving. . Taking the light output of the blue LED as an example, the silica gel is not doped with phosphor, and the luminous flux of the LED can be improved when the light emitting surface of the silica gel is an anti-pyramid array structure, an anti-microsphere array structure, a positive pyramid array structure or a positive microsphere array structure. About 15%.

Embodiment 3

The embodiment further provides an LED prepared by using any one of the first embodiment or the second embodiment. Referring to FIGS. 14A-14D, the LED includes an LED chip 11 and a silica gel 9, wherein a silica gel 9 is formed on the LED chip 11, and an outer surface of the silica gel 9 is a micro/nano array structure. The outer surface of the silica gel 9 of the LED, that is, the light exit surface, has a micro/nano array structure (for example, a positive microsphere array structure (as shown in FIG. 14A), an inverse microsphere array structure (shown in FIG. 14B), and a pyramid array structure. (As shown in FIG. 14C) and the anti-pyramid array structure (as shown in FIG. 14D), it can avoid the phenomenon that the silica gel adopts a plane-shaped light exit surface in the related art, so that the emitted light appears to be totally reflected, thereby improving the light-emitting efficiency of the LED. .

Industrial applicability

The LED preparation method and LED provided by the public use the method of graphic transfer on the surface of the LED of the LED The micro-nano structure is fabricated to break the total internal reflection of light to a certain extent, so that more light can be emitted, and the light-emitting efficiency of the LED is improved, so that the encapsulated LED is more energy-saving.

Claims

A method for preparing a light emitting diode LED, comprising:

Making a mother board having a first micro/nano structure by using micro-nano processing technology;

Making a polymer film having a second micro/nano structure by using the mother board;

The polymer film is coated on the silica gel of the LED device with good silica gel;

After the silica gel is cured, the polymer film is removed to form a structure complementary to the second micro/nano structure on the polymer film on the light-emitting surface of the silica gel of the LED device.
According to the method of claim 1, before the polymer film is coated on the silica gel of the LED device of the silica gel, the method further comprises:

Make LED devices with good silicone.
According to the method of claim 2, the LED device of the silicone is prepared, comprising:

Sticking the LED chip on the LED bracket;

Connecting the electrode pins to the LED chip with leads;

Silicone is spotted on the LED chip to form the LED device with the good silica gel.
The method of claim 1 wherein said using a micro-nano processing technique to fabricate a motherboard having a first micro-nano structure comprises:

Making an anti-pyramid array structure on a silicon substrate using micro-nano processing techniques; or

An anti-microsphere array structure was fabricated on a quartz substrate using micro-nano processing techniques.
The method of claim 4, wherein the fabricating the inverse pyramid array structure on the silicon substrate using the micro-nano processing technique comprises:

Forming arrayed square holes in a silicon dioxide layer on the silicon substrate by photolithography;

Using the silicon dioxide layer with square holes arranged in an array as a mask, wet etching the silicon substrate in a potassium hydroxide KOH solution to form an anti-pyramid array structure on the silicon substrate;

The silicon dioxide layer on the silicon substrate is removed in a buffered oxide etched BOE solution.
The method according to claim 4, wherein the micro-nano processing technique is used to fabricate an anti-microsphere array structure on a quartz substrate, comprising:

Forming a chromium Cr metal pattern layer on the quartz substrate by a photolithography method and a lift-off technique, the chromium Cr metal pattern layer comprising a circular through hole arranged in an array;

Using the Cr metal pattern layer as a mask, wet etching the quartz substrate in a BOE solution, forming an anti-microsphere array structure on the quartz substrate;

The Cr metal pattern layer on the quartz substrate is removed.
The method of claim 1 wherein said using said mother board produces a high having a second micro/nano structure Molecular films, including:

A second micro/nano structure complementary to the first micro/nano structure on the mother substrate is transferred to the polymer film by nanoimprint technology.
The method of claim 1, wherein the using the mother board to form a polymer film having a second micro/nano structure comprises:

Forming a template complementary to the first micro/nano structure of the master by using the mother board;

A second micro/nano structure complementary to the structure on the template is transferred to the polymeric film using a nanoimprint technique, wherein the first micro/nano structure is identical to the second micro-nano structure.
The method according to claim 8, wherein the using the mother board to form a template complementary to the first micro-nano structure of the master comprises:

Depositing a layer of nickel-Ni metal on the mother board having a first micro/nano structure;

Growing the Ni metal layer by an electroplating method;

The electroplated Ni metal layer was peeled off as a Ni template.
A light emitting diode LED prepared by the method of any one of claims 1-9.