WO2018038375A1 - Atomic layer deposition device and atomic layer deposition method using same - Google Patents

Abstract

An atomic layer deposition device is provided. According to one embodiment of the present invention, an atomic layer deposition device comprises: a gas supply module for simultaneously spraying, at different areas of a substrate to be deposited, atomic layer deposition gases comprising a source gas, a purge gas, and a reaction gas; and a stage arranged on one side of the gas supply module, and including a mounting part having the substrate to be deposited mounted thereon, wherein when the stage rotates once, two or more layers of atomic layers can be deposited on the substrate to be deposited.

Description

Atomic layer deposition equipment and atomic layer deposition method using the same

The present invention relates to an atomic layer deposition apparatus and an atomic layer deposition method using the same, and more particularly, to an atomic layer deposition apparatus for depositing a high quality atomic layer in a spatial division method and an atomic layer deposition method using the same.

In general, a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or glass includes physical vapor deposition (PVD) using physical collision, such as sputtering, and chemical reaction using a chemical reaction. Chemical vapor deposition (CVD) and the like.

Recently, as the design rules of semiconductor devices are drastically finer, fine patterns of thin films are required, and the step height of regions where thin films are formed is also very large, and thus a fine pattern of atomic layer thickness can be formed very uniformly. In addition, the use of atomic layer deposition (ALD) with excellent step coverage has been increasing.

This atomic layer deposition method is similar to the general chemical vapor deposition method in that it utilizes chemical reactions between gas molecules. However, in contrast to conventional CVD in which a plurality of gas molecules are simultaneously injected into a process chamber to deposit a reaction product generated on a substrate, an atomic layer deposition method is heated by injecting a gas containing one source material into the process chamber. The difference is that the product by chemical reaction between the source materials is deposited on the substrate surface by adsorbing onto the substrate and then injecting a gas containing another source material into the process chamber.

However, the time-division atomic layer deposition method currently studied has the problem that productivity is low. Accordingly, the present inventors have invented an atomic layer deposition apparatus and an atomic layer deposition method using the same, while maintaining high quality of the atomic layer deposition thin film and improving productivity.

One technical problem to be solved by the present invention is to provide an atomic layer deposition apparatus and a method for atomic layer deposition using the same to ensure high productivity while providing a high quality thin film.

Another technical problem to be solved by the present invention is to provide an atomic layer deposition apparatus capable of miniaturization (foot print reduction) of the equipment while providing a space-division atomic layer deposition environment, and an atomic layer deposition method using the same.

Another technical problem to be solved by the present invention is to provide a rotation type atomic layer deposition apparatus and an atomic layer deposition method using the same to prevent the mixing of atomic layer deposition gas.

The technical problem to be solved by the present invention is not limited by the above-mentioned problem.

An atomic layer deposition apparatus according to an embodiment of the present invention, a gas supply module for spraying an atomic layer deposition gas including a source gas, a purge gas and a reaction gas to another region of the substrate to be deposited at the same time and one of the gas supply module It is provided on the side, the stage comprising a seating portion on which the deposition target substrate is seated; including, as the stage is rotated one or more atomic layers may be deposited on the deposition target substrate.

According to an embodiment, the gas supply module may include a source gas supply unit for injecting the source gas, first and second purge gas supply units and a first outer purge gas supply unit supplying the purge gas, and a second outer purge gas supply unit And first and second reactive gas supply parts for injecting the reactive gas, wherein the first outer purge gas supply part, the first reactive gas supply part, and the first purge gas supply part are provided with respect to the rotation direction of the deposition target substrate. The source gas supply unit, the second purge gas supply unit, the second reaction gas supply unit and the second outer purge gas supply unit may be arranged in order.

According to an embodiment, the gas supply module may include a source gas supply unit for injecting the source gas, a purge gas supply unit for supplying the purge gas, and a reaction gas supply unit for injecting the reaction gas, An exhaust port for exhausting a reaction gas or a source gas may be provided between the purge gas supply units or between the source gas supply unit and the purge gas supply unit.

According to an embodiment, an exhaust port for exhausting the reaction gas may be disposed adjacent to the reaction gas supply unit, and an exhaust port for exhausting the source gas may be disposed adjacent to the source gas supply unit.

According to one embodiment, the gas supply module may be configured to inject more deposition gas from the periphery than the center of the stage.

According to one embodiment, the gas supply module is composed of sub gas supply modules, the sub gas supply module is disposed in an annular shape at an angle, the sub gas supply modules, the first gas for injecting the reaction gas A first reaction gas supply unit, a first purge gas supply unit for injecting the purge gas, a source gas supply unit for injecting the source gas, a second purge gas supply unit for injecting the purge gas and a second reaction gas supply unit for injecting the reaction gas And gas supply units arranged in sequence, and simultaneously spraying an atomic layer deposition gas including the source gas, the purge gas, and the reactive gas onto another region of the substrate to be deposited, and the sub gas supply modules include: Outer purge gas supplies may be included at both ends of the sub gas supply modules.

According to an embodiment, the gas supply module may include sub gas modules that provide different source gases, and different types of thin films may be formed on the deposition target substrate as the stage rotates.

In one embodiment, an atomic layer deposition method includes rotating a substrate to be deposited and depositing a first atomic layer through a gas supply module supplying an atomic layer deposition gas to the deposition target substrate and the deposition target. And further rotating the substrate to deposit a second atomic layer on the deposition target substrate through the gas supply module. When the rotation of the deposition target substrate is performed one rotation, two or more atomic layers are deposited on the deposition target substrate. This can be deposited.

In the atomic layer deposition method according to another embodiment of the present invention, as the stage on which a plurality of deposition target substrates including a first deposition target substrate and a second deposition target substrate is seated rotates in a first direction, the first deposition is performed. The first atomic layer is deposited on the target substrate through the first gas supply module, and the second gas supply module is disposed on the second deposition target substrate and spaced apart from the first gas supply module in an annular direction. A first step of simultaneously depositing a second atomic layer and the stage rotating in a second direction opposite to the first direction, through the first gas supply module to the first deposition target substrate; The method may further include a second step of further depositing an atomic layer, and further depositing a second atomic layer on the second deposition target substrate, on the second deposition target substrate, through the second gas supply module.

According to another embodiment, the first atomic layer and the second atomic layer may be atomic layers of the same kind.

According to another embodiment, the first atomic layer and the second atomic layer may be different kinds of atomic layers.

According to another embodiment, after performing the second step, by rotating the stage in the first direction, the second atomic layer is deposited on the first deposition target substrate through the second gas supply module, The method may further include a third step of simultaneously depositing a third atomic layer on the second deposition target substrate through a third gas supply module disposed to be spaced apart from the second gas supply module in an annular direction.

According to another embodiment, the first atomic layer and the third atomic layer may be the same kind of atomic layer, and the second atomic layer may be a different kind of atomic layer from the first and third atomic layers.

An atomic layer deposition apparatus according to an embodiment of the present invention is provided on one side of the gas supply module and the gas supply module for injecting a deposition gas containing a source gas, a purge gas and a reaction gas at the same time to another region of the substrate to be deposited And a stage including a mounting portion on which the substrate to be deposited is seated, wherein the gas supply module is symmetrical with respect to a center line of the stage, and two or more atomic layers are formed as the stage rotates. It can be configured to be deposited on a substrate. That is, the atomic layer deposition apparatus according to an embodiment of the present invention may improve productivity so that two or more atomic layers are deposited even when the stage is rotated once.

In addition, the atomic layer deposition apparatus according to an embodiment of the present invention, the exhaust gas for exhausting the reaction gas or source gas located between the reaction gas supply unit and the purge gas supply unit or between the source gas supply unit and the purge gas supply unit. It may include. Accordingly, the exhaust port according to the embodiment of the present invention can prevent the mixing of the atomic layer deposition gas due to the rotation of the stage, it is possible to provide a high quality thin film.

According to an embodiment of the present invention, the effects are not limited by the above-described effects.

1 is a view for explaining an atomic layer deposition apparatus according to a first embodiment of the present invention.

2 is a cross-sectional view taken along the line A-A 'of the atomic layer deposition apparatus according to the first embodiment of the present invention.

3 is a view for explaining an atomic layer deposition apparatus according to a second embodiment of the present invention.

4 is a view for explaining a B-B 'cross section of the atomic layer deposition apparatus according to the second embodiment of the present invention.

5 is a view for explaining an atomic layer deposition apparatus according to a third embodiment of the present invention.

6 is a view for explaining the atomic layer deposition method according to a first embodiment of the present invention.

7 and 8 are views for explaining the atomic layer deposition method according to a first embodiment of the present invention in detail.

9 is a view for explaining the atomic layer deposition method according to a second embodiment of the present invention.

10 to 12 are other views for explaining the atomic layer deposition method according to a second embodiment of the present invention in detail.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical idea of the present invention is not limited to the exemplary embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed contents are thorough and complete, and that the spirit of the present invention can be sufficiently delivered to those skilled in the art.

In the present specification, when a component is mentioned to be on another component, it means that it may be formed directly on the other component or a third component may be interposed therebetween. In addition, in the drawings, the shape and the size or thickness of the regions are exaggerated for the effective description of the technical content.

In addition, in various embodiments of the present specification, terms such as first, second, and third are used to describe various components, but these components should not be limited by these terms. These terms are only used to distinguish one component from another. Thus, what is referred to as a first component in one embodiment may be referred to as a second component in another embodiment. Each embodiment described and illustrated herein also includes its complementary embodiment. In addition, the term 'and / or' is used herein to include at least one of the components listed before and after.

In the specification, the singular encompasses the plural unless the context clearly indicates otherwise. In addition, the terms "comprise" or "having" are intended to indicate that there is a feature, number, step, element, or combination thereof described in the specification, and one or more other features or numbers, steps, configurations It should not be understood to exclude the possibility of the presence or the addition of elements or combinations thereof. In addition, the term "connection" is used herein to mean both indirectly connecting a plurality of components, and directly connecting.

In addition, in the following description of the present invention, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

The atomic layer deposition apparatus according to the first to third embodiments of the present invention may form various atomic layers. For example, at least one thin film layer among a metal thin film layer, an oxide thin film layer, a nitride thin film layer, a carbide thin film layer, and a sulfide thin film layer may be formed. According to an embodiment, the source gas for forming the metal thin film layer is one of Tri Methyl Aluminum (TMA), Tri Ethyl Aluminum (TEA), and Di Methyl Aluminum Chloride (DMACl), and the reaction gas is oxygen gas and ozone. It may be one of the gases. In this case, as the purge gas, any one of argon (Ar), nitrogen (N 2), helium (He), or a mixture of two or more thereof may be used. According to another embodiment, the source gas for forming the silicon thin film layer may be one of silane (Silane, SiH 4), disilane (Disilane, Si 2 H 6), and silicon tetrafluoride (SiF 4) including a silicon, and a reaction gas. May be one of an oxygen gas and an ozone gas. In this case, as the purge gas, any one of argon (Ar), nitrogen (N 2), helium (He), or a mixture of two or more thereof may be used. At this time, the source gas, the purge gas, the reaction gas is not limited thereto, and may be changed according to the needs of those skilled in the art. Hereinafter, an atomic layer deposition apparatus according to a first embodiment of the present invention will be described with reference to FIGS. 1 and 2.

1 is a view for explaining the atomic layer deposition equipment according to a first embodiment of the present invention, Figure 2 is a view for explaining the A-A 'cross section of the atomic layer deposition equipment according to a first embodiment of the present invention. In particular, FIG. 2 shows a cross-sectional view assuming that W1 of FIG. 1 is located below the gas supply module 100.

1 and 2, the atomic layer deposition apparatus 10 according to the first embodiment of the present invention simultaneously sprays a deposition gas including a source gas, a purge gas, and a reactive gas to another region of a substrate to be deposited. One side of the gas supply module 100 and the gas supply module 100 to be provided, for example, is provided at a lower side, and a seating portion on which the deposition target substrates W1, W2, W3, and W4 are seated (not illustrated). It may include a stage 180 including). Hereinafter, each configuration will be described in detail.

Referring to FIG. 1, the gas supply module 100 may be symmetrical with respect to the center line of the stage 180. That is, the gas supply module 100 may be integrally formed between one end and the other end of the stage 180 by passing through the center line of the stage 180.

The stage 180 may rotate (R) the seated deposition target substrates W1. W2. W3. W4. Accordingly, since the deposition target substrates W1. W2. W3. W4 pass under the gas supply module 100 by the rotation of the stage 180, the deposition target substrates W1. W2 are supplied with the atomic layer deposition gas. W3. W4) may be deposited with an atomic layer thin film.

In the example referring to FIG. 1, it is assumed that four substrates to be deposited are seated on the stage 180, but a mounting part may be provided to allow a smaller or larger number of substrates to be deposited. In addition, in the example referring to FIG. 1, it is assumed that the stage 180 is circular, but may be of a different shape. In addition, although it is assumed that the substrate to be deposited is circular like the wafer, it may be a different shape.

Referring to FIG. 2, the gas supply module 100 according to the first embodiment of the present invention may include a source gas supply unit 132b for injecting a source gas and first and second purge gas supply units 110a and 110b for supplying a purge gas. ), The first and second reactive gas supply units 132a and 132c for injecting the reactive gas may be included. In addition, the gas supply module 100 may further include a first outer purge gas supply unit 115a and a second outer purge gas supply unit 115b disposed at both ends of the gas supply module 100.

According to an embodiment, the source gas supply unit 132b, the first and second purge gas supply units 110a and 110b, and the first and second reaction gas supply units 132a and 132c may be rotated in a deposition target substrate. Can be disposed along.

More specifically, the first outer purge gas supply unit 115a, the first reaction gas supply unit 132a, the first purge gas supply unit 110a, the source gas supply unit 132b, the second purge gas supply unit 110b, The second reaction gas supply unit 132c and the second outer purge gas supply unit 115b may be disposed in this order.

The first and second outer purge gas supplies 115a and 115b and the first and second purge gas supplies 110a and 110b receive a purge gas from the purge gas source 150 and deposit the received purge gas. It can spray toward a target substrate. The source gas supply unit 132b may receive the source gas from the source gas source 140 and inject the provided source gas toward the deposition target substrate. In addition, the first and second reaction gas supply units 132a and 132c may receive a reaction gas from the reaction gas source 160 and inject the received reaction gas toward the deposition target substrate.

According to one embodiment, each gas supply unit 115a, 132a, 110a, 132b, 110b, 132c, 115b of the gas supply module may be configured to spray more deposition gas from the periphery than the center of the stage 180. For example, the injection holes of the gas supply units 115a, 132a, 110a, 132b, 110b, 132c, and 115b of the gas supply module may be larger at the periphery than the center of the stage 180. This takes into account that when the angular velocities of the stage are the same, the linear velocity of the periphery located radially outward is greater than the center of the stage. As a result, a uniform atomic layer thin film may be deposited in the region of the substrate to be deposited located at the center of the stage 180 or the region of the substrate to be deposited positioned at the periphery of the stage 180.

At one side of the first reaction gas supply unit 132a and the second reaction gas supply unit 132c, an exhaust port for exhausting the injected reaction gas may be disposed. More specifically, exhaust ports 134a and 136a for exhausting the reaction gas injected from the first reaction gas supply unit 132a may be directly adjacent to both sides of the first reaction gas supply unit 132a. The exhaust ports 134a and 136a may recover the injected reaction gas in a direction opposite to the injection direction, thereby preventing the reaction gas from entering another region other than the selected injection region. In addition, exhaust ports 134c and 136c for exhausting the reaction gas injected from the second reaction gas supply unit 132c may be directly adjacent to both sides of the second reaction gas supply unit 132c. The exhaust ports 134c and 136c may recover the injected reaction gas in a direction opposite to the injection direction, thereby preventing the reaction gas from entering another region other than the selected injection region.

On one side of the source gas supply unit 132b, an exhaust port for exhausting the injected source gas may be disposed. More specifically, exhaust ports 134b and 136b for exhausting the source gas injected from the source gas supply part 132b may be directly adjacent to both sides of the source gas supply part 132b. The exhaust ports 134b and 136b may recover the injected source gas in a direction opposite to the injection direction, thereby preventing the source gas from entering another region other than the selected injection region.

According to an embodiment, the exhaust ports 134a, 136a, 134b, 136b, 134c, and 136c may communicate with a bar dry pump 170. By driving the bar dry pump 170, the reaction gas and / or the source gas out of the corresponding spatial division region of the substrate may be exhausted from the reaction gas and / or the source gas injected by the top pumping method. .

Hereinafter, a method of driving an atomic layer deposition apparatus according to a first embodiment of the present invention will be described.

Each gas supply unit of the gas supply module 100 may simultaneously inject gas into the corresponding space partition area. For example, the first outer purge gas supply unit 115a injects purge gas into the A0 region, the first reaction gas supply unit 132a injects reaction gas into the A1 region, and the first purge gas supply unit 110a. ) Injects the purge gas into the A2 region, the source gas supply unit 132b injects the source gas into the A3 region, the second purge gas supply unit 110b injects the purge gas into the A4 region, and the second reaction gas supply unit. 132c may inject the reaction gas into the A5 region, and the second outer purge gas supplier 115B may inject the purge gas into the A6 region. These gases can be injected simultaneously.

At this time, the exhaust ports 134a and 136a disposed at both sides of the first reaction gas supply unit 132a may exhaust the reaction gas entering the outside of the A1 region, and may be provided at both sides of the source gas supply unit 132b. The disposed exhaust ports 134b and 136b may exhaust source gas entering the outside of the A3 region, and the exhaust ports 134c and 136c disposed on both sides of the second reaction gas supply unit 132c enter the outside of the A5 region. The reaction gas can be exhausted. Accordingly, since the mixing between the deposition gases is prevented, a high quality thin film can be provided.

When the deposition target substrate W1 enters the lower side of the gas supply module 100 by the rotation of the stage 180, the substrate 180 passes through the regions A0, A1, A2, A3, A4, A5, and A6 sequentially. Accordingly, each region of the deposition target substrate W1 can be provided with a source gas, a purge gas, a reaction gas, and a purge gas while passing through the regions A0, A1, A2, A3, A4, A5, and A6. Therefore, an atomic layer thin film may be deposited on the deposition target substrate W1. In particular, when the stage 180 is rotated once, the deposition target substrate W1 passes through the gas supply module 100 twice, and as the stage rotates once, two atomic layers are deposited on the deposition target substrate. Can be.

In addition, the atomic layer deposition apparatus according to the first embodiment of the present invention may provide a continuous atomic layer deposition process. The reaction gas supply time is twice as long as the source gas supply time for smooth atomic layer deposition. This is because the time required for the reaction of the source gas and the reactive gas of the substrate to be deposited is required. According to the first embodiment of the present invention, the deposition target substrate passing through the source gas supply on the top of the stage passes through the second reaction gas supply, and by the further rotation of the stage, the second reaction gas of the gas supply module located on the bottom of the stage Pass through the supply. That is, since the gas supply module located at the bottom of the stage additionally injects the reactive gas onto the deposition target substrate injected with the source gas and the reactive gas from the gas supply module located at the upper stage of the stage, it is possible to provide sufficient process time for the reactive gas deposition. . As a result, since a thin film of high quality can be provided, the stage can be rotated continuously so that productivity can be improved.

In addition, the atomic layer deposition apparatus according to the first embodiment of the present invention, through the first and second outer purge gas supply unit (115a, 115b), it is possible to minimize the mixing of the gas by the stage rotation. Since the first outer purge gas supply unit 115a is disposed outside the first reaction gas supply unit 132a, the reaction gas injected from the first reaction gas supply unit 132a is moved outward of the gas supply module 100. Can be prevented. In addition, since the second outer purge gas supply unit! 15b is disposed outside the second reaction gas supply unit 132c, the reaction gas injected from the second reaction gas supply unit 132c is supplied to the gas supply module 100. It can be prevented from being provided outward. Accordingly, even if airflow is generated by the rotation of the stage 180, it is possible to block the reaction gas from being provided in an undesired direction through the purge gas. That is, the reaction gas injected from the upper end of the stage can be prevented from flowing to the lower end of the stage. Therefore, the atomic layer deposition apparatus according to the first embodiment of the present invention can minimize the mixing phenomenon of the gas, it is possible to provide a high quality atomic layer thin film.

In addition, in the atomic layer deposition apparatus according to the first embodiment of the present invention, the spatial division type atomic layer deposition process may be performed as the plurality of deposition target substrates are rotated. Accordingly, the conventional spatial division atomic layer deposition apparatus requires additional space such as a loading space, a deposition space, and an unloading space with respect to the substrate to be deposited, but according to the first embodiment of the present invention, This can be dramatically reduced, resulting in a foot print of the equipment.

1 and 2, the atomic layer deposition apparatus according to the first embodiment of the present invention has been described. 3 and 4, an atomic layer deposition apparatus according to a second embodiment of the present invention will be described.

3 is a view for explaining the atomic layer deposition equipment according to a second embodiment of the present invention, Figure 4 is a view for explaining a cross-section B-B 'of the atomic layer deposition equipment according to a second embodiment of the present invention.

Referring to FIG. 3, the atomic layer deposition apparatus 20 according to the second embodiment of the present invention may be configured of four first to fourth sub gas supply modules 200a, 200b, 200c, and 200d. . These sub gas supply modules 200a, 200b, 200c, 200d may be arranged to be symmetrical with respect to the centerline of the stage 280. For example, the four sub gas supply modules 200a, 200b, 200c, and 200d may be disposed in an annular shape with a phase difference of 90 degrees, for example. Hereinafter, for convenience of description, the sub gas supply module will be abbreviated as a gas supply module.

The first to fourth gas supply modules 200a, 200b, 200c, and 200d may deposit the same type or different types of atomic layer thin films. For example, the first and third gas supply modules 200a and 200c and the second and fourth gas supply modules 200b and 200d may provide an atomic layer deposition gas to deposit different atomic layer thin films. have. Alternatively, the first to fourth gas supply modules 200a, 200b, 200c, and 200d may provide a deposition gas to deposit the same kind of atomic layer thin film.

On the other hand, the stage 280 may rotate the deposition target substrate (W1. W2. W3. W4). Accordingly, since the deposition target substrates W1. W2. W3. W4 pass through the gas supply modules 200a, 200b, 200c, and 200d by the rotation of the stage 180, the deposition target substrates W1. W2. W3. W4), an atomic layer thin film can be deposited. In addition, when the stage 180 is rotated once, four atomic layer thin films may be deposited on each substrate to be deposited by four gas supply modules.

In the example referring to FIG. 3, it is assumed that four substrates to be deposited are seated on the stage 180, but a mounting part may be provided to allow a smaller or larger number of substrates to be deposited. In addition, although the stage 180 is assumed to be circular in the reference to FIG. 3, it may be a different shape.

Since the first to fourth gas supply modules 200a, 200b, 200c, and 200d have configurations that correspond to each other only in positions, the following description will be made based on the first gas supply module 200a.

Referring to FIG. 4, the first gas supply module 200a according to the second embodiment of the present invention may include a source gas supply unit 232b for injecting a source gas and a first and second purge gas supply unit 210a for supplying a purge gas. , 210b), and first and second reactive gas supply units 232a and 232c for injecting the reactive gas. In addition, the first gas supply module 200a may further include a first outer purge gas supply unit 215a and a second outer purge gas supply unit 215b disposed at both ends of the first gas supply module 200a. Can be.

According to an embodiment, the source gas supply unit 232b, the first and second purge gas supply units 210a and 210b, and the first and second reactive gas supply units 232a and 232c may rotate the deposition target. Can be arranged accordingly.

More specifically, the first outer purge gas supply unit 215a, the first reaction gas supply unit 232a, the first purge gas supply unit 210a, the source gas supply unit 232b, the second purge gas supply unit 210b, The second reaction gas supply unit 232c and the second outer purge gas supply unit 215b may be disposed in this order.

The first and second outer purge gas supplies 215a and 215b and the first and second purge gas supplies 210a and 210b receive a purge gas from the purge gas source 250 and deposit the received purge gas. It can spray toward a target substrate. The source gas supply unit 232b may receive a source gas from the source gas supply source 240 and inject the provided source gas toward the deposition target substrate. In addition, the first and second reaction gas supply units 232a and 232c may receive a reaction gas from the reaction gas source 260 and spray the provided reaction gas toward the deposition target substrate.

According to one embodiment, each gas supply portion 215a, 232a, 210a, 232b, 210b, 232c, 215b of the first gas supply module may be configured to inject more deposition gas from the periphery than the center of the stage 280. have. For example, the injection holes of the gas supply units 215a, 232a, 210a, 232b, 210b, 232c, and 215b of the first gas supply module may be larger at the periphery than the center of the stage 280. This takes into account that when the angular velocities of the stage are the same, the linear velocity of the periphery located radially outward is greater than the center of the stage. As a result, a predetermined atomic layer thin film may be deposited in the region of the substrate to be deposited located at the center of the stage 280 or the region of the substrate to be deposited positioned at the periphery of the stage 280.

On one side of the first reaction gas supply unit 232a and the second reaction gas supply unit 232c, an exhaust port for exhausting the injected reaction gas may be disposed. More specifically, exhaust ports 234a and 236a for exhausting the reaction gas injected from the first reaction gas supply unit 232a may be directly adjacent to both sides of the first reaction gas supply unit 232a. The exhaust ports 234a and 236a may recover the injected reaction gas in a direction opposite to the injection direction, thereby preventing the reaction gas from entering another region other than the selected injection region. In addition, exhaust ports 234c and 236c for exhausting the reaction gas injected from the second reaction gas supply unit 232c may be directly adjacent to both sides of the second reaction gas supply unit 232c. The exhaust ports 234c and 236c may recover the injected reaction gas in a direction opposite to the injection direction, thereby preventing the reaction gas from entering another region other than the selected injection region.

On one side of the source gas supply unit 232b, an exhaust port for exhausting the injected source gas may be disposed. More specifically, exhaust ports 234b and 236b for exhausting the source gas injected from the source gas supply unit 232b may be directly adjacent to both sides of the source gas supply unit 230b. The exhaust ports 234b and 236b may recover the injected source gas in a direction opposite to the injection direction, thereby preventing the source gas from entering other regions other than the selected injection region.

According to an embodiment, the exhaust ports 234a, 236a, 234b, 236b, 234c, and 236c may communicate with a bar dry pump 270. By driving the bar dry pump 270, the reactive gas and / or the source gas out of the space-divided region of the substrate among the injected reactive gas and / or the source gas may be exhausted.

Hereinafter, a method of driving an atomic layer deposition apparatus according to a second embodiment of the present invention will be described.

Each gas supply unit of the first gas supply module 200a may simultaneously inject gas into the corresponding space division area. For example, the first outer purge gas supply unit 215a injects purge gas into the A0 region, the first reaction gas supply unit 232a injects reaction gas into the A1 region, and the first purge gas supply unit 210a. ) Injects the purge gas into the A2 region, the source gas supply unit 232b injects the source gas into the A3 region, the second purge gas supply unit 210b injects the purge gas into the A4 region, and the second reaction gas supply unit. 232c may inject the reaction gas into the A5 region, and the second outer purge gas supply unit A6 may inject the purge gas into the A6 region.

In this case, the exhaust ports 234a and 236a disposed at both sides of the first reaction gas supply unit 232a may exhaust the reaction gas entering the outside of the A1 region, and may be provided at both sides of the source gas supply unit 232b. The disposed exhaust ports 234b and 236b may exhaust source gas entering the outside of the A3 region, and the exhaust ports 234c and 236c disposed on both sides of the second reactive gas supply unit 232c may enter the outside of the A5 region. The reaction gas can be exhausted. Accordingly, since the mixing between the deposition gases is prevented, a high quality thin film can be provided.

Although a detailed description is omitted, the first gas supply module 200a may also be driven in the same manner as the second to fourth gas supply modules 200b, 200c, and 200d.

When the deposition target substrate W1 enters the lower side of the first gas supply module 200a by the rotation of the stage 280, the deposition target substrate W1 passes through the regions A0, A1, A2, A3, A4, A5, and A6 sequentially. . Accordingly, each region of the deposition target substrate W1 can be provided with a source gas, a purge gas, a reaction gas, and a purge gas while passing through the regions A0, A1, A2, A3, A4, A5, and A6. Therefore, an atomic layer thin film may be deposited on the deposition target substrate W1.

In particular, when the stage 280 is rotated once, the deposition target substrate W1 passes through the first to fourth gas supply modules 200a, 200b, 200c, and 200d, and thus four atomic layer thin films may be deposited. . In addition, when the stage 280 rotates once, four atomic layers thin films may be deposited on other substrates W2, W3, and W4.

In addition, the atomic layer deposition apparatus according to the second embodiment of the present invention may provide a continuous atomic layer deposition process. The reaction gas supply time is twice as long as the source gas supply time for smooth atomic layer deposition. This is because the time required for the reaction of the source gas and the reactive gas of the substrate to be deposited is required. According to the second embodiment of the present invention, the deposition target substrate passing through the source gas supply unit of the first gas supply module passes through the second reaction gas supply unit, and the first reaction of the second gas supply module is caused by additional rotation of the stage. It will pass through the gas supply. That is, since the second gas supply module additionally injects the reaction gas onto the deposition target substrate in which the source gas and the reaction gas are injected from the first gas supply module, sufficient process time for the deposition of the reactive gas may be provided. As a result, since a thin film of high quality can be provided, the stage can be rotated continuously so that productivity can be improved.

In addition, the atomic layer deposition apparatus according to the second embodiment of the present invention, through the first and second outer purge gas supply unit (215a, 215b), it is possible to minimize the mixing of the gas due to the stage rotation. Since the first outer purge gas supply unit 215a is disposed outside the first reaction gas supply unit 232a, the reaction gas injected from the first reaction gas supply unit 232a may cause the reaction of the first gas supply module 200a to occur. It can be prevented from being provided to the outside. In addition, since the second outer purge gas supply unit 215b is disposed outside the second reaction gas supply unit 232c, the reaction gas injected from the second reaction gas supply unit 232c may be supplied to the first gas supply module 200a. Can be provided to the outside. Accordingly, even if airflow is generated by the rotation of the stage 280, it is possible to block the reaction gas from being provided in an undesired direction through the purge gas. For example, the reaction gas injected from the first gas supply module 200a may be blocked from flowing into the second to fourth gas supply modules 200b, 200c, and 200d. Therefore, the atomic layer deposition apparatus according to the second embodiment of the present invention can minimize the mixing phenomenon of the gas, it is possible to provide a high quality atomic layer thin film.

In addition, in the atomic layer deposition apparatus according to the second embodiment of the present invention, the spatial division type atomic layer deposition process may be performed as the plurality of deposition target substrates are rotated. Accordingly, the conventional spatial division atomic layer deposition apparatus requires additional spaces such as a loading space, a deposition space, and an unloading space with respect to the substrate to be deposited, but according to the second embodiment of the present invention, This can be dramatically reduced, resulting in a foot print of the equipment.

The atomic layer deposition apparatus according to the second embodiment of the present invention has been described above with reference to FIGS. 3 and 4. Hereinafter, an atomic layer deposition apparatus according to a third embodiment of the present invention will be described with reference to FIG. 5.

5 is a view for explaining an atomic layer deposition apparatus according to a third embodiment of the present invention.

Referring to FIG. 5, the gas supply module 300 of the atomic layer deposition apparatus 30 according to the third embodiment of the present invention may be connected to the first gas supply module 300a and the first gas supply module 300a. The second gas supply module 300b may be adjacent to each other.

Configurations of the first and second gas supply modules 300a and 300b correspond to those described above with reference to the first and second embodiments. That is, the first and second gas supply modules 300a and 300b may include a first outer purge gas supply part, a first reaction gas supply part, a first purge gas supply part, a source gas supply part, a second purge gas supply part, and a second reaction gas. The supply portion and the second outer purge gas supply portion may be disposed adjacent to each other. In addition, exhaust ports may be provided at both sides of the first and second reaction gas supply parts and the source gas supply part. Detailed description thereof will be omitted.

According to the third embodiment of the present disclosure, as the stage 380 is rotated once, each of the substrates to be deposited includes upper ends of the first and second gas supply modules 300a and 300b and first and second gas supply modules. As it passes through the bottom of (300a. 300b), four atomic layer thin films can be deposited.

The third embodiment of the present invention is different from the first embodiment of the present invention in that the gas supply module of the first embodiment of the present invention described above is disposed adjacent to each other. The third embodiment of the present invention can also be applied to the second embodiment of the present invention described above. In this case, as the stage rotates once, eight atomic layer thin films may be deposited.

The atomic layer deposition apparatus according to the third embodiment of the present invention has been described above with reference to FIG. 5. Hereinafter, an atomic layer deposition method according to a first embodiment of the present invention will be described with reference to FIG. 6.

6 is a view for explaining an atomic layer deposition method according to a first embodiment of the present invention, Figures 7 and 8 are views for explaining an atomic layer deposition method according to a first embodiment of the present invention in detail. admit. In particular, FIGS. 7 and 8 are diagrams illustrating the implementation of the atomic layer deposition method according to the first embodiment through the atomic layer deposition apparatus according to the first embodiment of the present invention.

Referring to FIG. 6, in the atomic layer deposition method according to the first embodiment of the present invention, a first atomic layer is formed through a gas supply module that rotates a deposition target substrate and supplies an atomic layer deposition gas to the deposition target substrate. And depositing a second atomic layer on the deposition target substrate through the gas supply module by further rotating the deposition (S100) and the deposition target substrate.

Referring to FIG. 7, in step S100, the deposition target substrate W1 is rotated (in the R direction) to supply a first atom through the gas supply module 100 that supplies the atomic layer deposition gas to the deposition target substrate W1. The layer may be deposited.

That is, in a state where the deposition target substrate W1 is positioned on the upper left side of the gas supply module 100 (FIG. 7A), as the stage 180 rotates (in the R direction), the deposition target substrate W1 is formed. In the gas supply module 100, a source gas, a purge gas, a reaction gas, and a purge gas may be provided in a space division manner. Accordingly, after the deposition target substrate W1 passes through the gas supply module 100 (FIG. 7B), a first atomic layer may be deposited on the deposition target substrate W1.

8, in step S110, the deposition target substrate W1 is further rotated (in the R direction), and a second atomic layer is formed on the deposition target substrate W1 through the gas supply module 100. Can be deposited.

That is, in a state in which the deposition target substrate W1 is located at the lower right side of the gas supply module 100 (FIG. 8A), as the stage 180 rotates (in the R direction), the deposition target substrate W1 is formed. In the gas supply module 100, a source gas, a purge gas, a reaction gas, and a purge gas may be provided in a space division manner. Accordingly, after the deposition target substrate W1 passes through the gas supply module 100 (FIG. 8B), a second atomic layer may be deposited on the deposition target substrate W1.

That is, as the stage 180 rotates once, two atomic layer thin films may be deposited on the deposition target substrate W1.

In addition, since the deposition target substrate W1 receives the source gas from the top of the gas supply module and receives the reaction gas two times from the bottom of the gas supply module to the source gas again, sufficient time is required in the reaction gas supply process. Can provide. Therefore, a thin film of high quality can be provided even in a space division method.

In the exemplary embodiment described with reference to FIGS. 7 and 8, it is assumed that a substrate to be deposited is loaded in one stage for convenience of description. Alternatively, four substrates to be deposited may be loaded in a stage. .

In addition, although the description has been made on the assumption that the atomic layer deposition method according to the first embodiment of the present invention is implemented in the atomic layer deposition apparatus according to the first embodiment of the present invention, the atomic layer deposition according to the first embodiment of the present invention. The method may be implemented in the atomic layer deposition equipment according to the second and third embodiments of the present invention. If implemented in the atomic layer deposition apparatus according to the second and third embodiments, four atomic layer thin films may be deposited as the stage is rotated once.

The atomic layer deposition method according to the first embodiment of the present invention has been described above with reference to FIGS. 6 to 8. Hereinafter, an atomic layer deposition method according to a second embodiment of the present invention will be described with reference to FIGS. 9 to 12.

9 is a view for explaining the atomic layer deposition method according to a second embodiment of the present invention, Figures 10 to 12 are views for explaining the atomic layer deposition method according to a second embodiment of the present invention in detail. . In particular, FIGS. 10 to 12 are diagrams illustrating the implementation of the atomic layer deposition method according to the second embodiment through the atomic layer deposition apparatus according to the second embodiment of the present invention.

Referring to FIG. 9, in the atomic layer deposition method according to the second embodiment of the present disclosure, a stage on which a plurality of deposition target substrates including a first deposition target substrate and a second deposition target substrate is seated is rotated in a first direction. The first atomic layer is deposited on the first deposition target substrate through a first gas supply module, and the second deposition target substrate is spaced apart from the first gas supply module in an annular direction. The first step (S200) of simultaneously depositing the second atomic layer through the two gas supply module and the stage rotates in a second direction opposite to the first direction, the first deposition target substrate, Further depositing the first atomic layer through a first gas supply module, and further depositing a second atomic layer on the second deposition target substrate, on the second deposition target substrate, and via the second gas supply module. Second step (S210) It may be made, including.

Referring to FIG. 10, in operation S200, as the stage 280 rotates in a first direction (R1 direction), the first deposition target substrate W1 may be formed through a first gas supply module 200a. A first atomic layer is deposited, and a second atomic layer is disposed on the second deposition target substrate W2 through a second gas supply module 200b spaced apart from the first gas supply module 200a in an annular direction. Can be deposited simultaneously.

That is, as the stage 280 rotates (in the R1 direction) while the deposition target substrate W1 is positioned on the left side of the first gas supply module 200a (FIG. 10 (a)), the deposition target substrate W1 ), A source gas, a purge gas, a reaction gas and a purge gas may be provided in a space division manner through the first gas supply module 200a. Accordingly, after the deposition target substrate W1 passes through the first gas supply module 200a (FIG. 10B), a first atomic layer may be deposited on the deposition target substrate W1.

In addition, as the stage 280 rotates (in the R1 direction) while the deposition target substrate W2 is positioned at the upper end of the second gas supply module 200b (FIG. 10A), the deposition target substrate W2 is used. ), A source gas, a purge gas, a reaction gas and a purge gas may be provided in a space division method through the second gas supply module 200b. Accordingly, after the deposition target substrate W2 passes through the second gas supply module 200b (FIG. 10B), a second atomic layer may be deposited on the deposition target substrate W2. In this case, the first and second atomic layers may be deposited simultaneously.

In this case, when the first gas supply module 200a and the second gas supply module 200b inject the same gas to each other, the first and second atomic layers may be the same kind of atomic layers. In contrast, when the first gas supply module 200a and the second gas supply module 200b inject different kinds of gases, the first and second atomic layers may be different kinds of atomic layers. .

As the stage 280 rotates, the atomic layer thin film may be deposited on the substrates W3 and W3.

Referring to FIG. 11, in operation S210, as the stage 280 is rotated in a second direction opposite to the first direction (R2 direction), the first gas supply module is attached to the first deposition target substrate. The second atomic layer may be further deposited, and the second atomic layer may be further deposited on the second deposition target substrate, on the second deposition target substrate, through the second gas supply module.

That is, step S210 is performed after step S200, whereby the first deposition target substrate W1 passes again through the first gas supply module 200a to further deposit the first atomic layer, and the second deposition target substrate W2. The second atomic layer may be further deposited by passing through the second gas supply module 200b again. Step S210 may be particularly useful when the first gas supply module 200a and the second gas supply module 200b inject different types of gas. More specifically, two layers of a first atomic layer are deposited on the first deposition target substrate W1, and two layers of a first atomic layer and a heterogeneous second atomic layer are deposited on the second deposition target substrate W2. Can be. At this time, the first and second additional atomic layers may be deposited simultaneously.

Thereafter, step S200 may be repeatedly performed to deposit the first atomic layer on the first deposition target substrate W1 once more and the second atomic layer on the second deposition target substrate W2 once more. . This step may be omitted.

Thereafter, the stage 280 may further rotate in the first direction. Referring to FIG. 12, while the deposition target substrate W1 is positioned above the second gas supply module 200b (FIG. 12A), the stage 280 rotates (in the R1 direction) to deposit the deposition. The target substrate W1 may be provided with a source gas, a purge gas, a reactant gas, and a purge gas through the second gas supply module 200b in a space division method. Accordingly, after the deposition target substrate W1 passes through the second gas supply module 200b (FIG. 12B), a second atomic layer may be deposited on the deposition target substrate W1.

In addition, as the stage 280 rotates (in the R1 direction) while the deposition target substrate W2 is positioned on the right side of the third gas supply module 200c (FIG. 12A), the deposition target substrate W2 is performed. ), A source gas, a purge gas, a reaction gas and a purge gas may be provided in a space division method through the third gas supply module 200c. Accordingly, after the deposition target substrate W2 passes through the third gas supply module 200c (FIG. 12B), a third atomic layer may be deposited on the deposition target substrate W2. In this case, the third atomic layer may be deposited simultaneously with the second atomic layer.

The first gas supply module 200a and the third gas supply module 200c spray the same deposition gas, and the second gas supply module 200b is the first gas supply module 200a and the first gas supply module 200b. 3 gas supply module 200c and other deposition gas may be injected. Accordingly, the first and third atomic layers may be the same atomic layer, and the second atomic layer may be heterogeneous atomic layers with the first and third atomic layers. In this case, the fourth gas supply module 200d may inject the same kind of deposition gas as the second gas supply module 200b.

According to the atomic layer deposition method according to the second embodiment of the present invention, it is possible to provide convenience in that heterogeneous atomic layers can be easily formed. That is, the first gas supply module and the third gas supply module may provide different types of atomic layer deposition gases from the second gas supply module and the fourth gas supply module. As a result, heterogeneous atomic layers may be deposited on the deposition target substrate in one chamber.

In addition, for example, after the first deposition target substrate reciprocates through the first gas supply module and the first atomic layer is deposited on the first deposition target substrate, the first deposition target substrate is configured to supply the second gas supply module. By passing, a second atomic layer of a different kind from the first atomic layer can be deposited on the first atomic layer. In this way, a hybrid atomic layer can be deposited. The hybrid atomic layer may consist of a first inorganic layer-second inorganic layer, an inorganic layer-organic layer, an organic layer-inorganic layer, or a first organic layer-second organic layer.

Alternatively, each of the first to fourth gas supply modules 200a, 200b, 200c, and 200d may provide a different type of atomic layer deposition gas, and the first to fourth gas supply modules 200a and 200b may be provided. Of course, 200c, 200d) can provide the same kind of atomic layer.

As mentioned above, although this invention was demonstrated in detail using the preferable embodiment, the scope of the present invention is not limited to a specific embodiment, Comprising: It should be interpreted by the attached Claim. In addition, those skilled in the art should understand that many modifications and variations are possible without departing from the scope of the present invention.

The atomic layer deposition apparatus and the atomic layer deposition method according to the embodiments of the present invention may be applied as a deposition technique for semiconductors, displays, and energy devices.

Claims (13)

1. A gas supply module for simultaneously spraying an atomic layer deposition gas including a source gas, a purge gas, and a reactive gas onto another region of the substrate to be deposited; And

   A stage provided on one side of the gas supply module and including a seating part on which the substrate to be deposited is seated;

   2. The atomic layer deposition apparatus of which two or more atomic layers are deposited on the substrate to be deposited as the stage rotates once.
2. According to claim 1,

   The gas supply module injects a source gas supply unit for injecting the source gas, a first and a second purge gas supply unit and a first outer purge gas supply unit, a second outer purge gas supply unit, and the reaction gas supplying the purge gas. Including first and second reactive gas supplies,

   The first outer purge gas supply unit, the first reaction gas supply unit, the first purge gas supply unit, the source gas supply unit, the second purge gas supply unit, and the second reaction gas supply unit with respect to the rotation direction of the deposition target substrate, and the Atomic layer deposition equipment disposed in order of the second outer purge gas supply.
3. According to claim 1,

   The gas supply module includes a source gas supply unit for injecting the source gas, a purge gas supply unit for supplying the purge gas, and a reaction gas supply unit for injecting the reaction gas,

   And an exhaust port for exhausting the reaction gas or the source gas between the reaction gas supply part and the purge gas supply part or between the source gas supply part and the purge gas supply part.
4. The method of claim 3, wherein

   An exhaust port for exhausting the reaction gas is disposed adjacent to the reaction gas supply portion,

   The exhaust port for exhausting the source gas is disposed adjacent to the source gas supply unit.
5. According to claim 1,

   And the gas supply module is configured to spray more deposition gas at the periphery than at the center of the stage.
6. According to claim 1,

   The gas supply module is composed of sub gas supply modules, the sub gas supply module is disposed in an annular shape at an angle,

   The sub gas supply modules may include a first reaction gas supply unit for injecting the reaction gas, a first purge gas supply unit for injecting the purge gas, a source gas supply unit for injecting the source gas, and a second purge for injecting the purge gas A gas supply part arranged in order of a gas supply part and a second reaction gas supply part that injects the reaction gas, and simultaneously deposits an atomic layer deposition gas including the source gas, the purge gas, and the reactive gas on the substrate to be deposited. Spraying to another area, the sub gas supply module, the atomic layer deposition module including outer purge gas supply at both ends of the sub gas supply module.
7. According to claim 1,

   The gas supply module is composed of sub gas modules that provide different source gases,

   The heterogeneous thin film is formed on the substrate to be deposited as the stage is rotated atomic layer deposition module.
8. Rotating the deposition target substrate and depositing a first atomic layer through a gas supply module supplying an atomic layer deposition gas to the deposition target substrate; And

   And further rotating the deposition target substrate to deposit a second atomic layer on the deposition target substrate through the gas supply module.

   When the substrate to be deposited is rotated one time, two or more atomic layers are deposited on the substrate to be deposited.
9. As the stage on which the plurality of deposition target substrates including the first deposition target substrate and the second deposition target substrate are seated rotates in the first direction, the first deposition target substrate is connected to the first deposition target substrate through a first gas supply module. Depositing an atomic layer and simultaneously depositing a second atomic layer on the second deposition target substrate through a second gas supply module disposed to be spaced apart from the first gas supply module in an annular direction; And

   As the stage rotates in a second direction opposite to the first direction, the first atomic layer is further deposited on the first deposition target substrate through the first gas supply module, and the second deposition is performed. And depositing a second atomic layer on the target substrate through the second gas supply module on the second deposition target substrate.
10. The method of claim 9,

    And the first atomic layer and the second atomic layer are atomic layers of the same kind as each other.
11. The method of claim 9,

    And the first atomic layer and the second atomic layer are different kinds of atomic layers.
12. The method of claim 11, wherein

    After performing the second step, by rotating the stage in the first direction, the second atomic layer is deposited on the first deposition target substrate through the second gas supply module, and the second deposition target substrate. And a third step of simultaneously depositing a third atomic layer through a third gas supply module disposed spaced apart from the second gas supply module in an annular direction.
13. The method of claim 12,

    And the first atomic layer and the third atomic layer are atomic layers of the same kind as each other, and the second atomic layer is an atomic layer of a different kind from the first and third atomic layers.

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