WO2018088316A1 - Curable silicone composition and optical semiconductor device using same - Google Patents
Curable silicone composition and optical semiconductor device using same Download PDFInfo
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- WO2018088316A1 WO2018088316A1 PCT/JP2017/039673 JP2017039673W WO2018088316A1 WO 2018088316 A1 WO2018088316 A1 WO 2018088316A1 JP 2017039673 W JP2017039673 W JP 2017039673W WO 2018088316 A1 WO2018088316 A1 WO 2018088316A1
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- mass
- carbon atoms
- curable silicone
- silicone composition
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- 239000000203 mixture Substances 0.000 title claims abstract description 115
- 229920001296 polysiloxane Polymers 0.000 title claims abstract description 106
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 230000003287 optical effect Effects 0.000 title claims abstract description 45
- 125000003342 alkenyl group Chemical group 0.000 claims abstract description 44
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 40
- KPWVUBSQUODFPP-UHFFFAOYSA-N ethenyl-(ethenyl-methyl-phenylsilyl)oxy-methyl-phenylsilane Chemical compound C=1C=CC=CC=1[Si](C)(C=C)O[Si](C)(C=C)C1=CC=CC=C1 KPWVUBSQUODFPP-UHFFFAOYSA-N 0.000 claims abstract description 39
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 20
- 125000004432 carbon atom Chemical group C* 0.000 claims description 57
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 239000003054 catalyst Substances 0.000 claims description 13
- 238000006459 hydrosilylation reaction Methods 0.000 claims description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- -1 siloxane unit Chemical group 0.000 abstract description 91
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 abstract description 21
- 230000035939 shock Effects 0.000 abstract description 17
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 abstract description 14
- 230000035699 permeability Effects 0.000 abstract description 11
- 229910004674 SiO0.5 Inorganic materials 0.000 abstract 1
- 125000005037 alkyl phenyl group Chemical group 0.000 abstract 1
- 230000002459 sustained effect Effects 0.000 abstract 1
- 229920002554 vinyl polymer Polymers 0.000 abstract 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 30
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 16
- 229910000077 silane Inorganic materials 0.000 description 14
- 125000003545 alkoxy group Chemical group 0.000 description 13
- 239000007789 gas Substances 0.000 description 11
- 229920002050 silicone resin Polymers 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 238000003786 synthesis reaction Methods 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical class OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 9
- 125000003710 aryl alkyl group Chemical group 0.000 description 8
- 125000003118 aryl group Chemical group 0.000 description 8
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 8
- 125000005843 halogen group Chemical group 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- VMAWODUEPLAHOE-UHFFFAOYSA-N 2,4,6,8-tetrakis(ethenyl)-2,4,6,8-tetramethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound C=C[Si]1(C)O[Si](C)(C=C)O[Si](C)(C=C)O[Si](C)(C=C)O1 VMAWODUEPLAHOE-UHFFFAOYSA-N 0.000 description 7
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 7
- 150000004756 silanes Chemical class 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 125000001309 chloro group Chemical group Cl* 0.000 description 6
- 229920001577 copolymer Polymers 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 150000003961 organosilicon compounds Chemical class 0.000 description 6
- 238000010992 reflux Methods 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 125000004122 cyclic group Chemical group 0.000 description 5
- 125000003700 epoxy group Chemical group 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 230000009257 reactivity Effects 0.000 description 5
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910052693 Europium Inorganic materials 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910004283 SiO 4 Inorganic materials 0.000 description 4
- 125000004423 acyloxy group Chemical group 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- BITPLIXHRASDQB-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane Chemical compound C=C[Si](C)(C)O[Si](C)(C)C=C BITPLIXHRASDQB-UHFFFAOYSA-N 0.000 description 4
- 125000001624 naphthyl group Chemical group 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000005388 dimethylhydrogensiloxy group Chemical group 0.000 description 3
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 125000000962 organic group Chemical group 0.000 description 3
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 3
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 3
- 239000011253 protective coating Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 3
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 3
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 2
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- 125000001246 bromo group Chemical group Br* 0.000 description 2
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 2
- YMQKSHPWLHFISZ-UHFFFAOYSA-N chloro-bis(ethenyl)-methylsilane Chemical compound C=C[Si](Cl)(C)C=C YMQKSHPWLHFISZ-UHFFFAOYSA-N 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 125000003493 decenyl group Chemical group [H]C([*])=C([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 125000005066 dodecenyl group Chemical group C(=CCCCCCCCCCC)* 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 125000006038 hexenyl group Chemical group 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- IKPUOBYSZKPWGX-UHFFFAOYSA-N methoxy(penta-1,4-dien-3-yl)silane Chemical compound C(=C)C(C=C)[SiH2]OC IKPUOBYSZKPWGX-UHFFFAOYSA-N 0.000 description 2
- 125000004998 naphthylethyl group Chemical group C1(=CC=CC2=CC=CC=C12)CC* 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000005187 nonenyl group Chemical group C(=CCCCCCCC)* 0.000 description 2
- 125000004365 octenyl group Chemical group C(=CCCCCCC)* 0.000 description 2
- 125000005375 organosiloxane group Chemical group 0.000 description 2
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 2
- 125000005561 phenanthryl group Chemical group 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920001843 polymethylhydrosiloxane Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 125000001725 pyrenyl group Chemical group 0.000 description 2
- 239000002683 reaction inhibitor Substances 0.000 description 2
- 125000005372 silanol group Chemical class 0.000 description 2
- XFTDXEGRBTYXQE-UHFFFAOYSA-N silyl 3-ethenylpent-4-enoate Chemical compound C(=C)C(C=C)CC(=O)O[SiH3] XFTDXEGRBTYXQE-UHFFFAOYSA-N 0.000 description 2
- UQMGAWUIVYDWBP-UHFFFAOYSA-N silyl acetate Chemical class CC(=O)O[SiH3] UQMGAWUIVYDWBP-UHFFFAOYSA-N 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 125000003944 tolyl group Chemical group 0.000 description 2
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 2
- 125000005065 undecenyl group Chemical group C(=CCCCCCCCCC)* 0.000 description 2
- 125000005023 xylyl group Chemical group 0.000 description 2
- AWFOOUAPWFZKQK-UHFFFAOYSA-N (acetyloxy-methyl-phenylsilyl) acetate Chemical compound CC(=O)O[Si](C)(OC(C)=O)C1=CC=CC=C1 AWFOOUAPWFZKQK-UHFFFAOYSA-N 0.000 description 1
- HMVBQEAJQVQOTI-SOFGYWHQSA-N (e)-3,5-dimethylhex-3-en-1-yne Chemical compound CC(C)\C=C(/C)C#C HMVBQEAJQVQOTI-SOFGYWHQSA-N 0.000 description 1
- GRGVQLWQXHFRHO-AATRIKPKSA-N (e)-3-methylpent-3-en-1-yne Chemical compound C\C=C(/C)C#C GRGVQLWQXHFRHO-AATRIKPKSA-N 0.000 description 1
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- GQCZPFJGIXHZMB-UHFFFAOYSA-N 1-tert-Butoxy-2-propanol Chemical compound CC(O)COC(C)(C)C GQCZPFJGIXHZMB-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- GHUVKJKGVAZUHA-UHFFFAOYSA-N 2-ethylbut-1-enyl(hydroxy)silane Chemical compound C(C)C(=C[SiH2]O)CC GHUVKJKGVAZUHA-UHFFFAOYSA-N 0.000 description 1
- CEBKHWWANWSNTI-UHFFFAOYSA-N 2-methylbut-3-yn-2-ol Chemical compound CC(C)(O)C#C CEBKHWWANWSNTI-UHFFFAOYSA-N 0.000 description 1
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
- MGSLBBSZARNBCU-UHFFFAOYSA-N 3-ethylpent-2-enoxysilane Chemical compound C(C)C(=CCO[SiH3])CC MGSLBBSZARNBCU-UHFFFAOYSA-N 0.000 description 1
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- QHEICIPYBJHEQV-UHFFFAOYSA-N 4-ethylhex-3-enoxysilane Chemical compound C(C)C(=CCCO[SiH3])CC QHEICIPYBJHEQV-UHFFFAOYSA-N 0.000 description 1
- ZBSKZKPSSKTLNE-UHFFFAOYSA-N 4-methylpent-3-enoxysilane Chemical compound CC(=CCCO[SiH3])C ZBSKZKPSSKTLNE-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
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- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- TYLVACRWLCCDSJ-UHFFFAOYSA-N S(=O)(=O)=[Si](O)O Chemical compound S(=O)(=O)=[Si](O)O TYLVACRWLCCDSJ-UHFFFAOYSA-N 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- RQVFGTYFBUVGOP-UHFFFAOYSA-N [acetyloxy(dimethyl)silyl] acetate Chemical compound CC(=O)O[Si](C)(C)OC(C)=O RQVFGTYFBUVGOP-UHFFFAOYSA-N 0.000 description 1
- CNOSLBKTVBFPBB-UHFFFAOYSA-N [acetyloxy(diphenyl)silyl] acetate Chemical compound C=1C=CC=CC=1[Si](OC(C)=O)(OC(=O)C)C1=CC=CC=C1 CNOSLBKTVBFPBB-UHFFFAOYSA-N 0.000 description 1
- BKPKTOIGWIYKJZ-UHFFFAOYSA-N [bis(ethenyl)-methylsilyl]oxy-bis(ethenyl)-methylsilane Chemical compound C=C[Si](C=C)(C)O[Si](C)(C=C)C=C BKPKTOIGWIYKJZ-UHFFFAOYSA-N 0.000 description 1
- VLFKGWCMFMCFRM-UHFFFAOYSA-N [diacetyloxy(phenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C1=CC=CC=C1 VLFKGWCMFMCFRM-UHFFFAOYSA-N 0.000 description 1
- KTVHXOHGRUQTPX-UHFFFAOYSA-N [ethenyl(dimethyl)silyl] acetate Chemical compound CC(=O)O[Si](C)(C)C=C KTVHXOHGRUQTPX-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
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- 239000002585 base Substances 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- ZTBHAQIQNUZAJC-UHFFFAOYSA-N chloro(2-ethylbut-1-enyl)silane Chemical compound Cl[SiH2]C=C(CC)CC ZTBHAQIQNUZAJC-UHFFFAOYSA-N 0.000 description 1
- XSDCTSITJJJDPY-UHFFFAOYSA-N chloro-ethenyl-dimethylsilane Chemical compound C[Si](C)(Cl)C=C XSDCTSITJJJDPY-UHFFFAOYSA-N 0.000 description 1
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- NNKJLYMBVRDUEI-UHFFFAOYSA-N chloro-tris(ethenyl)silane Chemical compound C=C[Si](Cl)(C=C)C=C NNKJLYMBVRDUEI-UHFFFAOYSA-N 0.000 description 1
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- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
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- OSXYHAQZDCICNX-UHFFFAOYSA-N dichloro(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](Cl)(Cl)C1=CC=CC=C1 OSXYHAQZDCICNX-UHFFFAOYSA-N 0.000 description 1
- GNEPOXWQWFSSOU-UHFFFAOYSA-N dichloro-methyl-phenylsilane Chemical compound C[Si](Cl)(Cl)C1=CC=CC=C1 GNEPOXWQWFSSOU-UHFFFAOYSA-N 0.000 description 1
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- MNFGEHQPOWJJBH-UHFFFAOYSA-N diethoxy-methyl-phenylsilane Chemical compound CCO[Si](C)(OCC)C1=CC=CC=C1 MNFGEHQPOWJJBH-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- RBSBUSKLSKHTBA-UHFFFAOYSA-N dihydroxy-methyl-phenylsilane Chemical compound C[Si](O)(O)C1=CC=CC=C1 RBSBUSKLSKHTBA-UHFFFAOYSA-N 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 description 1
- CVQVSVBUMVSJES-UHFFFAOYSA-N dimethoxy-methyl-phenylsilane Chemical compound CO[Si](C)(OC)C1=CC=CC=C1 CVQVSVBUMVSJES-UHFFFAOYSA-N 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- XCLIHDJZGPCUBT-UHFFFAOYSA-N dimethylsilanediol Chemical compound C[Si](C)(O)O XCLIHDJZGPCUBT-UHFFFAOYSA-N 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- IXGYSZDFZQSXDT-UHFFFAOYSA-N ethenyl-[ethenyl(diethyl)silyl]oxy-diethylsilane Chemical compound CC[Si](CC)(C=C)O[Si](CC)(CC)C=C IXGYSZDFZQSXDT-UHFFFAOYSA-N 0.000 description 1
- RCNRJBWHLARWRP-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane;platinum Chemical compound [Pt].C=C[Si](C)(C)O[Si](C)(C)C=C RCNRJBWHLARWRP-UHFFFAOYSA-N 0.000 description 1
- NUFVQEIPPHHQCK-UHFFFAOYSA-N ethenyl-methoxy-dimethylsilane Chemical compound CO[Si](C)(C)C=C NUFVQEIPPHHQCK-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical compound CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 description 1
- HTSRFYSEWIPFNI-UHFFFAOYSA-N ethyl-dimethoxy-methylsilane Chemical compound CC[Si](C)(OC)OC HTSRFYSEWIPFNI-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
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- 125000005417 glycidoxyalkyl group Chemical group 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- BPIWPYXVCTUKPV-UHFFFAOYSA-N hydroxy(2-methylprop-1-enyl)silane Chemical compound CC(C)=C[SiH2]O BPIWPYXVCTUKPV-UHFFFAOYSA-N 0.000 description 1
- AIVBTEVJRNATTL-UHFFFAOYSA-N hydroxy(penta-1,4-dien-3-yl)silane Chemical compound C(=C)C(C=C)[SiH2]O AIVBTEVJRNATTL-UHFFFAOYSA-N 0.000 description 1
- MPGPMDYRORRRGX-UHFFFAOYSA-N hydroxy-methyl-(2-phenylethenyl)silane Chemical compound C[SiH](O)C=CC1=CC=CC=C1 MPGPMDYRORRRGX-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 1
- SKYCLDLCBIETAK-UHFFFAOYSA-N methyl(3-phenylprop-2-enoxy)silane Chemical compound C[SiH2]OCC=CC1=CC=CC=C1 SKYCLDLCBIETAK-UHFFFAOYSA-N 0.000 description 1
- GWHRHHNARBBJCU-UHFFFAOYSA-N methyl(4-phenylbut-3-enoxy)silane Chemical compound C[SiH2]OCCC=CC1=CC=CC=C1 GWHRHHNARBBJCU-UHFFFAOYSA-N 0.000 description 1
- RFJXZOGTGKLKEU-UHFFFAOYSA-N methylsilyl 4-phenylbut-3-enoate Chemical compound C[SiH2]OC(CC=CC1=CC=CC=C1)=O RFJXZOGTGKLKEU-UHFFFAOYSA-N 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920006136 organohydrogenpolysiloxane Polymers 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000005054 phenyltrichlorosilane Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 239000003223 protective agent Substances 0.000 description 1
- 239000003340 retarding agent Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- SJUYHBCRXPVODY-UHFFFAOYSA-N silyl 4-ethylhex-3-enoate Chemical compound C(C)C(=CCC(=O)O[SiH3])CC SJUYHBCRXPVODY-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- YZVRVDPMGYFCGL-UHFFFAOYSA-N triacetyloxysilyl acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)OC(C)=O YZVRVDPMGYFCGL-UHFFFAOYSA-N 0.000 description 1
- ORVMIVQULIKXCP-UHFFFAOYSA-N trichloro(phenyl)silane Chemical compound Cl[Si](Cl)(Cl)C1=CC=CC=C1 ORVMIVQULIKXCP-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- WILBTFWIBAOWLN-UHFFFAOYSA-N triethyl(triethylsilyloxy)silane Chemical compound CC[Si](CC)(CC)O[Si](CC)(CC)CC WILBTFWIBAOWLN-UHFFFAOYSA-N 0.000 description 1
- FCVNATXRSJMIDT-UHFFFAOYSA-N trihydroxy(phenyl)silane Chemical compound O[Si](O)(O)C1=CC=CC=C1 FCVNATXRSJMIDT-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- JYTZMGROHNUACI-UHFFFAOYSA-N tris(ethenyl)-methoxysilane Chemical compound CO[Si](C=C)(C=C)C=C JYTZMGROHNUACI-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5425—Silicon-containing compounds containing oxygen containing at least one C=C bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates to a curable silicone composition, and more specifically, a curable silicone composition that can be suitably used as a sealing material or protective coating material for an optical semiconductor element in an optical semiconductor device such as a light emitting diode (LED), and the like.
- the present invention relates to an optical semiconductor device using the same.
- the curable silicone composition is used as a sealing material or protective coating material for an optical semiconductor element in an optical semiconductor device such as a light emitting diode (LED).
- LED light emitting diode
- the cured product of the curable silicone composition has high gas permeability, when used in a high-brightness LED with strong light intensity and large heat generation, discoloration of the sealing material due to corrosive gas, LED Decrease in brightness due to corrosion of silver plated on the substrate is a problem. This is because the emission efficiency of the optical semiconductor device is attenuated.
- Patent Document 1 and Patent Document 2 propose a curable silicone composition
- a curable silicone composition comprising a branched organopolysiloxane having a methylphenylvinylsiloxane unit, an organohydrogenpolysiloxane, and a catalyst for addition reaction.
- These compositions are disclosed to give cured products with low gas permeability.
- these curable silicone compositions have insufficient curability and thermal shock resistance of the resulting cured product, and further improvement has been demanded.
- An object of the present invention is to provide a curable silicone composition that provides a cured product having high hydrosilylation reactivity, excellent curability and thermal shock resistance, and low gas permeability. Moreover, the objective of this invention is providing the optical semiconductor device etc. which are excellent in thermal shock resistance and by which high luminous efficiency continues by using the said curable silicone composition.
- the present invention contains an organopolysiloxane containing an alkylphenylvinylsiloxane unit, and 1,3-divinyl-1,3-diphenyl-1,3-dimethyldi
- the present inventors have found that the above problems can be solved by a curable silicone composition characterized in that the siloxane content range is greater than 0.0 mass% and less than 3.0 mass%, and the present invention has been achieved.
- 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane remains in the organopolysiloxane during the synthesis of the branched or resinous organopolysiloxane containing alkylphenylvinylsiloxane units.
- the said subject can be solved by using the curable silicone composition controlled so that this content may exist in said range.
- the curable silicone composition of the present invention is An alkylphenylalkenylsiloxane unit (R 2 R 3 R 4 SiO 1/2 ; R 2 is an alkyl group having 1 to 12 carbon atoms; R 3 is a phenyl group; R 4 is an alkenyl group having 2 to 12 carbon atoms) Comprising an organopolysiloxane having, and The content of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane is greater than 0.0% by mass and less than 3.0% by mass with respect to the entire composition And
- the curable silicone composition of the present invention comprises (A) Average unit formula: (R 1 3 SiO 1/2 ) a (R 2 R 3 R 4 SiO 1/2 ) b (R 5 2 SiO 2/2 ) c (R 3 SiO 3/2 ) d (Wherein R 1 is the same or different, an alkyl group having 1 to 12 carbon atoms or an alkenyl group having 2 to 12 carbon atoms, provided that at least one R 1 in one molecule is an alkenyl group having 2 to 12 carbon atoms) R 2 is an alkyl group having 1 to 12 carbon atoms; R 3 is a phenyl group; R 4 is an alkenyl group having 2 to 12 carbon atoms; R 4 is an alkenyl group having 2 to 12 carbon atoms; R 5 is the same or different; , An alkyl group having 1 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, or a phenyl group; a, b,
- the cured product of the present invention is obtained by curing the above curable silicone composition.
- the optical semiconductor device of the present invention is characterized in that an optical semiconductor element is sealed with a cured product of the curable silicone composition described above.
- the curable silicone composition of the present invention is characterized by forming a cured product having high hydrosilylation reactivity, excellent curability and thermal shock resistance, and low gas permeability. Furthermore, the cured product of the present invention is characterized by low gas permeability and excellent thermal shock resistance, and the optical semiconductor device of the present invention provided with the cured product is excellent in reliability and maintains high luminous efficiency. There is a feature.
- the curable silicone composition of the present invention comprises an alkylphenylalkenylsiloxane unit (R 2 R 3 R 4 SiO 1/2 ;
- R 2 is an alkyl group having 1 to 12 carbon atoms;
- R 3 is a phenyl group;
- R 4 is a carbon number.
- the organopolysiloxane is characterized by containing an organopolysiloxane having 2 to 12 alkenyl groups), and the organopolysiloxane forms a cured product having excellent hydrosilylation reactivity and low gas permeability. be able to.
- the organopolysiloxane may contain other siloxane units, and particularly preferably has a branched or resinous molecular structure.
- Such organopolysiloxane is preferably Average unit formula: (R 1 3 SiO 1/2 ) a (R 2 R 3 R 4 SiO 1/2 ) b (R 5 2 SiO 2/2 ) c (R 3 SiO 3/2 ) d It is represented by
- R 1 is the same or different and is an alkyl group having 1 to 12 carbon atoms or an alkenyl group having 2 to 12 carbon atoms.
- alkyl group for R 1 include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl group, a decyl group, an undecyl group, and a dodecyl group. It is a methyl group.
- Examples of the alkenyl group for R 1 include vinyl group, allyl group, butenyl group, pentenyl group, hexenyl group, heptenyl group, octenyl group, nonenyl group, decenyl group, undecenyl group, and dodecenyl group. It is a group. However, at least one R 1 in one molecule is an alkenyl group having 2 to 12 carbon atoms. R 2 is an alkyl group having 1 to 12 carbon atoms, and examples thereof are the same alkyl groups as those described above for R 1 , preferably a methyl group. R 3 is a phenyl group.
- R 4 is an alkenyl group having 2 to 12 carbon atoms, and examples thereof include the same alkenyl groups as those described above for R 1 , preferably a vinyl group.
- R 5 is the same or different and is an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, or a phenyl group. Examples of the alkyl group for R 5 include the same alkyl groups as those described above for R 1 . Examples of the alkenyl group for R 5 include the same alkenyl groups as those described above for R 1 .
- the organopolysiloxane according to the present invention is represented by the above average unit formula, but is a siloxane unit represented by the formula: R 2 2 R 3 SiO 1/2 within the range not impairing the object of the present invention, the formula: Siloxane unit represented by R 2 R 3 2 SiO 1/2 , siloxane unit represented by formula: R 3 3 SiO 1/2 , siloxane unit represented by formula: R 2 SiO 3/2 , formula: R It may have a siloxane unit represented by 4 SiO 3/2 or a siloxane unit represented by the formula: SiO 4/2 .
- R 2 is an alkyl group having 1 to 12 carbon atoms
- R 3 is an aryl group having 6 to 20 carbon atoms or an aralkyl group having 7 to 20 carbon atoms
- R 4 is an alkyl group having 2 to 12 carbon atoms.
- the same groups as described above are exemplified.
- the organopolysiloxane of the present invention may have a silicon atom-bonded alkoxy group such as a methoxy group, an ethoxy group, or a propoxy group, or a silicon atom-bonded hydroxyl group as long as the object of the present invention is not impaired.
- the method of hydrolyzing and condensing the silane compound represented by these in presence of an acid or an alkali is mentioned.
- R 3 Six 3 Is a raw material for introducing a siloxane unit represented by the formula: R 3 SiO 3/2 into an organopolysiloxane.
- R 3 is an aryl group having 6 to 20 carbon atoms or an aralkyl group having 7 to 20 carbon atoms, and examples thereof are the same as those described above, and preferably a phenyl group or a naphthyl group.
- X represents an alkoxy group, an acyloxy group, a halogen atom, or a hydroxyl group. Examples of the alkoxy group for X include a methoxy group, an ethoxy group, and a propoxy group. An example of the acyloxy group for X is an acetoxy group. Examples of the halogen atom for X include a chlorine atom and a bromine atom.
- silane compounds include alkoxysilanes such as phenyltrimethoxysilane and phenyltriethoxysilane; acyloxysilanes such as phenyltriacetoxysilane; halosilanes such as phenyltrichlorosilane; hydroxysilanes such as phenyltrihydroxysilane.
- alkoxysilanes such as phenyltrimethoxysilane and phenyltriethoxysilane
- acyloxysilanes such as phenyltriacetoxysilane
- halosilanes such as phenyltrichlorosilane
- hydroxysilanes such as phenyltrihydroxysilane.
- R 1 3 SiOS iR 1 3 Is a raw material for introducing a siloxane unit represented by the formula: R 1 3 SiO 1/2 into the organopolysiloxane.
- R 1 is the same or different and is an alkyl group having 1 to 12 carbon atoms or an alkenyl group having 2 to 12 carbon atoms.
- Examples of the alkyl group for R 1 include the same groups as described above, and a methyl group is preferable.
- Examples of the alkenyl group for R 1 include the same groups as described above, and a vinyl group is preferable.
- Such disiloxanes include 1,1,1,3,3,3-hexamethyldisiloxane, 1,1,1,3,3,3-hexaethyldisiloxane, 1,3-divinyl-1, 1,3,3-tetramethyldisiloxane, 1,3-divinyl-1,1,3,3-tetraethyldisiloxane, 1,1,3,3-tetravinyl-1,3-dimethyldisiloxane, 1,1,3,3,3-hexavinyldisiloxane is exemplified.
- Two or more such disiloxanes can be used in combination, but at least 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 1,3-divinyl-1,1,3, It is necessary to include 1,3-dialkenyl-1,1,3,3-tetraalkyldisiloxane such as 3-tetraethyldisiloxane.
- R 1 3 SiX Is also a raw material for introducing a siloxane unit represented by the formula: R 1 3 SiO 1/2 into the organopolysiloxane.
- R 1 is the same or different and is an alkyl group having 1 to 12 carbon atoms or an alkenyl group having 2 to 12 carbon atoms.
- Examples of the alkyl group for R 1 include the same groups as described above, and a methyl group is preferable.
- Examples of the alkenyl group for R 1 include the same groups as described above, and a vinyl group is preferable.
- X represents an alkoxy group, an acyloxy group, a halogen atom, or a hydroxyl group, and examples thereof include the same groups as described above.
- silane compounds include alkoxysilanes such as trimethylmethoxysilane, trimethylethoxysilane, dimethylvinylmethoxysilane, diethylvinylmethoxysilane, dimethylvinylethoxysilane, diethylvinylethoxysilane, divinylmethylmethoxysilane, and trivinylmethoxysilane; Acyloxysilanes such as dimethylvinylacetoxysilane, diethylvinylacetoxysilane, divinylmethylacetoxysilane, and trivinylacetoxysilane; halosilanes such as trimethylchlorosilane, dimethylvinylchlorosilane, diethylvinylchlorosilane, divinylmethylchlorosilane, and trivinylchlorosilane; dimethylvinylhydroxy Silane, diethylvinylhydroxysilane, divinylmethylhydroxysilane
- silane compounds Two or more such silane compounds can be used in combination, but it is necessary to include at least an alkenyldialkylsilane compound such as divinylmethylmethoxysilane, divinylmethylacetoxysilane, divinylmethylchlorosilane, divinylmethylhydroxysilane, and the like.
- alkenyldialkylsilane compound such as divinylmethylmethoxysilane, divinylmethylacetoxysilane, divinylmethylchlorosilane, divinylmethylhydroxysilane, and the like.
- R 2 R 3 R 4 SiOSiR 2 R 3 R 4 Is a raw material for introducing a siloxane unit represented by the formula: R 2 R 3 R 4 SiO 1/2 into the organopolysiloxane.
- R 2 is an alkyl group having 1 to 12 carbon atoms, and examples thereof are the same groups as described above, preferably a methyl group.
- R 3 is a phenyl group.
- R 4 is an alkenyl group having 2 to 12 carbon atoms, and examples thereof are the same groups as described above, preferably a vinyl group.
- Examples of such disiloxane include 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane.
- R 2 R 3 R 4 SiX Is also a raw material for introducing a siloxane unit represented by the formula: R 2 R 3 R 4 SiO 1/2 into the organopolysiloxane.
- R 2 is an alkyl group having 1 to 12 carbon atoms, and examples thereof are the same groups as described above, preferably a methyl group.
- R 3 is a phenyl group.
- R 4 is an alkenyl group having 2 to 12 carbon atoms, exemplified by the same groups as described above, and preferably a vinyl group.
- X represents an alkoxy group, an acyloxy group, a halogen atom, or a hydroxyl group, and examples thereof include the same groups as described above.
- silane compounds include alkoxysilanes such as methylphenylvinylmethoxysilane and methylphenylvinylethoxysilane; acetoxysilanes such as methylphenylvinylacetoxysilane; chlorosilanes such as methylphenylvinylchlorosilane; hydroxy such as methylphenylvinylhydroxysilane.
- alkoxysilanes such as methylphenylvinylmethoxysilane and methylphenylvinylethoxysilane
- acetoxysilanes such as methylphenylvinylacetoxysilane
- chlorosilanes such as methylphenylvinylchlorosilane
- hydroxy such as methylphenylvinylhydroxysilane.
- a silane compound or a silane oligomer for introducing the siloxane unit represented by 2 can be reacted.
- R 5 is the same or different and is an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, or a phenyl group.
- Examples of the alkyl group for R 5 include the same alkyl groups as those described above for R 1 .
- Examples of the alkenyl group for R 5 include the same alkenyl groups as those described above for R 1 .
- silane compounds include dimethyldimethoxysilane, methylethyldimethoxysilane, methylphenyldimethoxysilane, diphenyldimethoxysilane, tetramethoxysilane, dimethyldiethoxysilane, methylethyldiethoxysilane, methylphenyldiethoxysilane, and diphenyldiethoxy.
- Alkoxysilanes such as silane, tetramethoxysilane, tetraethoxysilane; acetoxysilanes such as dimethyldiacetoxysilane, methylphenyldiacetoxysilane, diphenyldiacetoxysilane, tetraacetoxysilane; dimethyldichlorosilane, methylphenyldichlorosilane, diphenyldichlorosilane , Halosilanes such as tetrachlorosilane; dimethyldihydroxysilane, methylphenyldihydroxysilane, di Hydroxy silanes such as E sulfonyl dihydroxysilane are exemplified.
- cyclic silicone compounds examples include cyclic dimethylsiloxane oligomers, cyclic phenylmethylsiloxane oligomers, and cyclic diphenylsiloxane oligomers. Furthermore, as a silane oligomer, the partial hydrolyzate of tetramethoxysilane and the partial hydrolyzate of tetraethoxysilane are illustrated.
- Examples of the acid that can be used include hydrochloric acid, acetic acid, formic acid, nitric acid, oxalic acid, sulfuric acid, phosphoric acid, polyphosphoric acid, polyvalent carboxylic acid, trifluoromethanesulfonic acid, and ion exchange resin.
- alkalis examples include inorganic alkalis such as potassium hydroxide and sodium hydroxide; triethylamine, diethylamine, monoethanolamine, diethanolamine, triethanolamine, aqueous ammonia, tetramethylammonium hydroxide, alkoxysilane having an amino group, Examples include organic base compounds such as aminopropyltrimethoxysilane.
- an organic solvent can be used.
- the organic solvent that can be used include ethers, ketones, acetates, aromatic or aliphatic hydrocarbons, ⁇ -butyrolactone, and mixtures of two or more thereof.
- Preferred organic solvents include propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, propylene glycol mono-t-butyl ether, ⁇ -butyrolactone, toluene and xylene. Illustrated.
- Such an organopolysiloxane of the present invention has good hydrosilylation reactivity. Therefore, the organopolysiloxane having at least two silicon-bonded hydrogen atoms in one molecule as a main component, and for hydrosilylation reaction.
- a hydrosilylation reaction-curable silicone composition can be prepared by adding a catalyst.
- the curable silicone composition of the present invention comprises 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane and comprises 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane.
- the second feature is that the content of siloxane in the composition is greater than 0.0 mass% and less than 3.0 mass%. 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane remains in the organopolysiloxane during the synthesis of the branched or resinous organopolysiloxane containing alkylphenylvinylsiloxane units.
- the thermal shock resistance is improved by using a curable silicone composition whose content is controlled to be in the above range.
- the content of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane in the composition is 0.05 mass% to 2.50 mass. % Range is more preferred.
- the thermal shock resistance is lowered as shown in the comparative example of the present specification.
- the said content exceeds the said upper limit, it may become a cause of sclerosis
- the curable silicone composition of the present invention contains the above-mentioned components (A) to (D), and optionally contains the component (E).
- the organopolysiloxane of component (A) is as described above.
- the content of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane in the composition is 0.05 mass% to 2.50 mass. % Range is particularly preferred.
- Component (B) is an optional component for imparting flexibility, extensibility, and flexibility to the cured product, and has at least two alkenyl groups in one molecule and silicon-bonded hydrogen atoms. It is a linear organopolysiloxane that does not.
- the alkenyl group in the component (B) includes 2 to 12 carbon atoms such as vinyl group, allyl group, butenyl group, pentenyl group, hexenyl group, heptenyl group, octenyl group, nonenyl group, decenyl group, undecenyl group and dodecenyl group.
- the alkenyl group is exemplified, and a vinyl group is preferable.
- Propyl, anthracenylethyl, phenanthrylethyl, pyrenylethyl, and their aralkyls An alkyl group such as a methyl group or an ethyl group; an alkoxy group such as a methoxy group or an ethoxy group; an aralkyl group having 7 to 20 carbon atoms such as a group substituted with a halogen atom such as a chlorine atom or a bromine atom; or chloro Examples thereof include a halogenated alkyl group having 1 to 12 carbon atoms such as a methyl group and a 3,3,3-trifluoropropyl group, and examples thereof are the same groups as those described above, preferably a methyl group and a phenyl group.
- Examples of such a component (B) include a trimethylsiloxy group-capped dimethylsiloxane / methylvinylsiloxane copolymer with both molecular chain terminals, a trimethylsiloxy group-capped methylvinylpolysiloxane with both molecular chain terminals, and a trimethylsiloxy group-capped dimethyl group with both molecular chains.
- the content of the component (B) is in the range of 0 to 70% by weight, preferably in the range of 0 to 50% by weight, particularly preferably, based on the present composition. It is in the range of 0 to 40% by mass.
- the content of the component (B) is below the upper limit of the above range, the cured product can be given flexibility, extensibility, and flexibility without increasing the gas permeability of the cured product. As a result, it is because the reliability of the optical semiconductor device produced using this composition can be improved.
- Component is a cross-linking agent of the present composition, and is an organopolysiloxane having at least two silicon-bonded hydrogen atoms in one molecule.
- Examples of the bonding position of silicon atom-bonded hydrogen atoms in component (C) include molecular chain terminals and / or molecular chain side chains.
- Other groups bonded to the silicon atom in the component include methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, undecyl group, An alkyl group having 1 to 12 carbon atoms such as dodecyl group; a phenyl group, a tolyl group, a xylyl group, a naphthyl group, an anthracenyl group, a phenanthryl group, a pyrenyl group, and a hydrogen atom of these aryl groups such as a methyl group, an ethyl group, etc.
- An alkyl group such as a methyl group or an ethyl group; an alkoxy group such as a methoxy group or an ethoxy group; an aralkyl group having 7 to 20 carbon atoms such as a group substituted with a halogen atom such as a chlorine atom or a bromine atom; or a chloromethyl group, Examples thereof include halogenated alkyl groups having 1 to 12 carbon atoms such as
- component (C) examples include molecular chain both ends trimethylsiloxy group-blocked methylhydrogenpolysiloxane, molecular chain both ends trimethylsiloxy group-blocked dimethylsiloxane / methylhydrogensiloxane copolymer, molecular chain both ends trimethylsiloxy group Blocked dimethylsiloxane / methylhydrogensiloxane / methylphenylsiloxane copolymer, molecular chain both ends dimethylhydrogensiloxy group blocked dimethylpolysiloxane, molecular chain both ends dimethylhydrogensiloxy group blocked dimethylsiloxane / methylphenylsiloxane copolymer, Methylphenylpolysiloxane blocked with a dimethylhydrogensiloxy group blocked at both ends of the molecular chain, a siloxane unit represented by the general formula: R ′ 3 SiO 1/2 and a siloxy represented by the general formula:
- R ′ in the formula is an alkyl group having 1 to 12 carbon atoms, an aryl group having 6 to 20 carbon atoms, an aralkyl group having 7 to 20 carbon atoms, or a halogenated alkyl group having 1 to 12 carbon atoms, Examples are the same as those described above.
- the content of the component (C) is such that the silicon-bonded hydrogen atoms in this component are 0.1 to 0.1 mol in total for 1 mol of the alkenyl groups in the component (A) and the component (B).
- the amount is in the range of 5 moles, preferably the amount in the range of 0.5 to 2 moles. This is because if the content of the component (C) is not less than the lower limit of the above range, the composition is sufficiently cured. On the other hand, if it is not more than the upper limit of the above range, the heat resistance of the cured product is improved. As a result, the reliability of the optical semiconductor device manufactured using this composition is improved.
- the component (D) is a hydrosilylation catalyst for accelerating the curing of the composition, and examples thereof include platinum-based catalysts, rhodium-based catalysts, and palladium-based catalysts.
- the component (D) is preferably a platinum-based catalyst because the curing of the composition can be remarkably accelerated.
- the platinum-based catalyst include platinum fine powder, chloroplatinic acid, an alcohol solution of chloroplatinic acid, a platinum-alkenylsiloxane complex, a platinum-olefin complex, and a platinum-carbonyl complex, preferably a platinum-alkenylsiloxane complex. is there.
- 1,3-divinyl-1,1,3,3-tetramethyldisiloxane is preferred because the platinum-alkenylsiloxane complex has good stability.
- stimulates hydrosilylation reaction you may use non-platinum type metal catalysts, such as iron, ruthenium, and iron / cobalt.
- the content of the component (D) is an effective amount for accelerating the curing of the present composition.
- the catalyst metal in the component (D) is 0.01 by mass unit with respect to the composition.
- the amount is preferably in the range of ⁇ 500 ppm, more preferably in the range of 0.01 to 100 ppm, and particularly in the range of 0.01 to 50 ppm. It is preferable.
- the composition may contain (E) an adhesion-imparting agent in order to improve the adhesion of the cured product to the substrate that is in contact with the curing process.
- the component (E) is preferably an organosilicon compound having at least one alkoxy group bonded to a silicon atom in one molecule. Examples of the alkoxy group include a methoxy group, an ethoxy group, a propoxy group, a butoxy group, and a methoxyethoxy group, and a methoxy group is particularly preferable.
- the group other than the alkoxy group bonded to the silicon atom of the organosilicon compound includes a substituted or unsubstituted monovalent hydrocarbon group such as an alkyl group, an alkenyl group, an aryl group, an aralkyl group, and a halogenated alkyl group; 3 Glycidoxyalkyl groups such as glycidoxypropyl group and 4-glycidoxybutyl group; epoxies such as 2- (3,4-epoxycyclohexyl) ethyl group and 3- (3,4-epoxycyclohexyl) propyl group Cyclohexyl alkyl group; epoxy group-containing monovalent organic group such as oxiranylalkyl group such as 4-oxiranylbutyl group, 8-oxiranyloctyl group; acrylic group-containing monovalent organic group such as 3-methacryloxypropyl group Group; a hydrogen atom is exemplified.
- This organosilicon compound preferably has a silicon atom-bonded alkenyl group or a silicon atom-bonded hydrogen atom. Moreover, since it can provide favorable adhesiveness to various types of substrates, the organosilicon compound preferably has at least one epoxy group-containing monovalent organic group in one molecule.
- organosilicon compounds include organosilane compounds, organosiloxane oligomers, and alkyl silicates. Examples of the molecular structure of the organosiloxane oligomer or alkyl silicate include linear, partially branched linear, branched, cyclic, and network, particularly linear, branched, and network. Preferably there is.
- organosilicon compounds examples include silane compounds such as 3-glycidoxypropyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, and 3-methacryloxypropyltrimethoxysilane; A siloxane compound having at least one silicon atom-bonded alkenyl group or silicon atom-bonded hydrogen atom and silicon atom-bonded alkoxy group, and a silane compound or siloxane compound having at least one silicon atom-bonded alkoxy group and silicon in one molecule.
- silane compounds such as 3-glycidoxypropyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, and 3-methacryloxypropyltrimethoxysilane
- a siloxane compound having at least one silicon atom-bonded alkenyl group or silicon atom-bonded hydrogen atom and silicon atom-bonded alkoxy group and
- Examples thereof include a mixture of a siloxane compound having at least one atom-bonded hydroxy group and at least one silicon atom-bonded alkenyl group, methyl polysilicate, ethyl polysilicate, and epoxy group-containing ethyl polysilicate.
- the content of the component (E) is not limited, but it adheres favorably to the base material that is in contact with the curing process, so that a total of 100 masses of the components (A) to (D) is included.
- the content is preferably in the range of 0.01 to 10 parts by mass with respect to parts.
- the present composition includes 2-methyl-3-butyn-2-ol, 3,5-dimethyl-1-hexyn-3-ol, 2-phenyl-3-butyne-2- Alkyne alcohols such as all; Enyne compounds such as 3-methyl-3-penten-1-yne and 3,5-dimethyl-3-hexen-1-yne; 1,3,5,7-tetramethyl-1,3 , 5,7-tetravinylcyclotetrasiloxane, 1,3,5,7-tetramethyl-1,3,5,7-tetrahexenylcyclotetrasiloxane, and a reaction inhibitor such as benzotriazole.
- the content of the reaction inhibitor is not limited, but is within the range of 0.0001 to 5 parts by mass with respect to 100 parts by mass in total of the components (A) to (D). preferable.
- the present composition can contain a fluorescent material as other optional components.
- the phosphor include oxide phosphors, oxynitride phosphors, nitride phosphors, sulfide phosphors, and oxysulfide phosphors that are widely used in light emitting diodes (LEDs). Examples thereof include yellow, red, green, and blue light emitting phosphors.
- oxide phosphors include yttrium, aluminum, and garnet-based YAG green-yellow light-emitting phosphors containing cerium ions, terbium, aluminum, garnet-based TAG yellow light-emitting phosphors containing cerium ions, and Examples include silicate green to yellow light emitting phosphors containing cerium and europium ions.
- oxynitride phosphors include silicon, aluminum, oxygen, and nitrogen-based sialon-based red to green light-emitting phosphors containing europium ions.
- nitride-based phosphors include calcium, strontium, aluminum, silicon, and nitrogen-based casoon-based red light-emitting phosphors containing europium ions.
- sulfide type include ZnS type green coloring phosphors including copper ions and aluminum ions.
- oxysulfide phosphors include Y 2 O 2 S red light-emitting phosphors containing europium ions.
- These fluorescent materials may be used singly or as a mixture of two or more.
- the content of the fluorescent material is not particularly limited, but in the present composition is in the range of 0.1 to 70% by mass, and further in the range of 1 to 20% by mass. preferable.
- inorganic fillers such as silica, glass, alumina and zinc oxide; fine organic resin powders such as polymethacrylate resin; You may contain dye, a pigment, a flame-retarding agent, a solvent, etc.
- the curable silicone composition of the present invention cures at room temperature or by heating, but is preferably heated to cure quickly.
- the heating temperature is preferably in the range of 50 to 200 ° C.
- the curable silicone composition of the present invention is suitable for a sealant for an optical semiconductor device, and can provide an optical semiconductor device in which an optical semiconductor element is sealed with a cured product of the curable silicone composition.
- the cured product of the present invention is obtained by curing the above curable silicone composition.
- the shape of the cured product is not particularly limited, and examples thereof include a sheet shape and a film shape.
- the cured product can be handled alone, but can also be handled in a state where the optical semiconductor element or the like is covered or sealed.
- the optical semiconductor device of the present invention is characterized in that an optical semiconductor element is sealed with a cured product of the above curable silicone composition.
- an optical semiconductor device of the present invention include a light emitting diode (LED), a photocoupler, and a CCD.
- the optical semiconductor element include a light emitting diode (LED) chip and a solid-state imaging element.
- the use of the curable silicone composition of the present invention is not limited to these.
- FIG. 1 shows a cross-sectional view of a single surface-mounted LED that is an example of the optical semiconductor device of the present invention.
- an LED chip 1 is die-bonded on a lead frame 2, and the LED chip 1 and the lead frame 3 are wire-bonded by a bonding wire 4.
- a frame member 5 is provided around the LED chip 1, and the LED chip 1 inside the frame member 5 is sealed with a cured product 6 of the curable silicone composition of the present invention.
- the LED chip 1 is die-bonded to the lead frame 2, the LED chip 1 and the lead frame 3 are wire-bonded by a gold bonding wire 4, and then
- An example is a method in which the inside of the frame member 5 provided around the LED chip 1 is filled with the curable silicone composition of the present invention and then cured by heating at 50 to 200 ° C.
- the curable silicone composition of the present invention the cured product thereof, and the optical semiconductor device will be described in detail with reference to examples.
- the viscosity is a value at 25 ° C.
- Me, Vi, Ph, and Ep represent a methyl group, a vinyl group, a phenyl group, and a 3-glycidoxypropyl group, respectively.
- Methylglycidoxypropyldimethoxysilane (314 g), water (130 g), and potassium hydroxide (0.50 g) were added to the toluene solution layer washed with water, and the mixture was heated to reflux for 1 hour. Subsequently, methanol was distilled off and excess water was removed by azeotropic dehydration. After heating at reflux for 4 hours, the toluene solution was cooled, neutralized with 0.55 g of acetic acid, and then washed with water three times.
- silicone resins A to C containing methylphenylvinylsiloxane units having different contents of 1,3-divinyl-1,3-diphenyldimethyldisiloxane were obtained.
- Synthesis Example 2 Silicone Resin B
- Example 1 6.83 parts by mass of silicone resin B prepared in Synthesis Example 2, 0.82 parts by mass of methylphenylpolysiloxane blocked with dimethylvinylsiloxy group-blocked dimethylvinylsiloxy group having a viscosity of 3,000 mPa ⁇ s, formula: H (CH 3) 2 SiO (C 6 H 5 ) Organotrisiloxane represented by 2SiOSi (CH3) 2H 2.10 parts by mass (the silicon atom-bonded hydrogen atom in this component is contained in 1 mol of the total vinyl group in the silicone resin and methylphenylpolysiloxane) 1), 0.25 parts by mass of the adhesion-imparting agent of Reference Example 1, 0.02 parts by mass of 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane, And 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane solution
- a silicone composition was prepared. When this composition was cured at 150 ° C. for 1 hour, a cured product of Shore-D 73 was obtained. The surface of the cured product was smooth with no tack. The characteristics are shown in Table 1. The amount of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane in the curable silicone composition was 0.10% by mass.
- Example 2 A curable silicone composition having a viscosity of 6,200 mPa ⁇ s was prepared in the same manner as in Example 1 except that the amount of 1,3-divinyl-1,3-diphenyldimethyldisiloxane added was 0.10 parts by mass. Prepared. When this composition was cured at 150 ° C. for 1 hour, a cured product of Shore-D 69 was obtained. The surface of the cured product was smooth with no tack. The characteristics are shown in Table 1. The amount of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane in the curable silicone composition was 0.99% by mass.
- Example 3 In the same manner as in Example 1, except that the amount of 1,3-divinyl-1,3-diphenyldimethyldisiloxane added was 0.20 parts by mass, a curable silicone composition having a viscosity of 5,000 mPa ⁇ s was prepared. Prepared. When this composition was cured at 150 ° C. for 1 hour, a cured product of Shore-D 64 was obtained. The surface of the cured product was smooth with no tack. The characteristics are shown in Table 1. The 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane in the curable silicone composition was 1.96% by mass.
- a curable silicone composition having a viscosity of 2300 mPa ⁇ s was prepared in the same manner as in Example 1, except that the amount of 1,3-divinyl-1,3-diphenyldimethyldisiloxane added was 0.50 parts by mass. .
- this composition was cured at 150 ° C. for 1 hour, a cured product of Shore-D 44 was obtained. The surface of the cured product was smooth with no tack.
- the characteristics are shown in Table 1.
- the 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane in the curable silicone composition was 4.75% by mass.
- a curable silicone composition having a viscosity of 1100 mPa ⁇ s was prepared in the same manner as in Example 1, except that the amount of 1,3-divinyl-1,3-diphenyldimethyldisiloxane added was 0.91 part by mass. .
- This composition was cured at 150 ° C. for 1 hour, but the surface of the cured product was sticky and Shore-D measurement was not possible. The characteristics are shown in Table 1.
- the 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane in the curable silicone composition was 8.33% by mass.
- Example 4 The content of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane is 0.47% by mass, 5.95 parts by mass of a silicone resin containing a vinylmethylphenylsiloxy group, a viscosity of 3, 000 mPa ⁇ s molecular chain both ends dimethylvinylsiloxy group-blocked methylphenylpolysiloxane 1.80 parts by mass, organotrisiloxane represented by the formula: H (CH 3) 2 SiO (C 6 H 5) 2 SiOS i (CH 3) 2 H 1.98 parts by mass (The amount of silicon atom-bonded hydrogen atoms in this component is 1 with respect to a total of 1 mol of vinyl groups in the silicone resin and methylphenylpolysiloxane), 0.25 part by mass of the adhesion-imparting agent of Reference Example 1 0.02, part by weight of 1,3,5,7-tetramethyl-1,3,5,7-t
- a curable silicone composition containing a silicone resin containing a methylphenylvinylsiloxane unit, comprising 1,3-divinyl-1,3-diphenyldimethyldisiloxane When the content is 0.10% by mass, 0.99% by mass, or 1.96% by mass, the number of defects is 2 or less even at 401 cycles, and excellent thermal shock resistance is exhibited.
- Comparative Examples 1 to 3 the same curable silicone composition having a 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane content of 0
- the number of defects becomes 8 or more even at 401 cycles, and the thermal shock resistance is clearly inferior.
- the content is 8.33% by mass, the curability is clearly inferior.
- an optical semiconductor device using the curable silicone composition of Example 4 (content of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane is 0.28% by mass) Compared to Comparative Example 4 (the same content of 3.51% by mass), the light emission efficiency after 566 hours and 997 hours is excellent.
- the curable silicone composition of the present invention can be used as an electric / electronic adhesive, potting agent, protective agent, coating agent, and underfill agent, and has particularly high reactivity and gas permeability. Since it can form a cured product that is low and has high thermal shock resistance, it is suitable as a sealing material or protective coating material for optical semiconductor elements in optical semiconductor devices such as light emitting diodes (LEDs), and light that maintains high luminous efficiency.
- a semiconductor device or the like can be provided.
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Abstract
Description
アルキルフェニルアルケニルシロキサン単位(R2R3R4SiO1/2;R2は炭素数1~12のアルキル基;R3はフェニル基;R4は炭素数2~12のアルケニル基である)を有するオルガノポリシロキサンを含有してなり、かつ、
組成物全体に対して1,3-ジビニル-1,3-ジフェニル-1,3-ジメチルジシロキサンの含有量が、0.0質量%よりも大きく、3.0質量%未満であることを特徴とする。 The curable silicone composition of the present invention is
An alkylphenylalkenylsiloxane unit (R 2 R 3 R 4 SiO 1/2 ; R 2 is an alkyl group having 1 to 12 carbon atoms; R 3 is a phenyl group; R 4 is an alkenyl group having 2 to 12 carbon atoms) Comprising an organopolysiloxane having, and
The content of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane is greater than 0.0% by mass and less than 3.0% by mass with respect to the entire composition And
(A)平均単位式:
(R1 3SiO1/2)a(R2R3R4SiO1/2)b(R5 2SiO2/2)c(R3SiO3/2)d
(式中、R1は同じかまたは異なる、炭素数1~12のアルキル基もしくは炭素数2~12のアルケニル基、但し、一分子中の少なくとも一つのR1は炭素数2~12のアルケニル基;R2は炭素数1~12のアルキル基;R3はフェニル基;R4は炭素数2~12のアルケニル基;R4は炭素数2~12のアルケニル基;R5は同じかまたは異なる、炭素数1~12のアルキル基、炭素数2~12のアルケニル基、もしくはフェニル基;a、b、c、およびdは、それぞれ、0.00≦a≦0.45、0.01≦b≦0.45、0≦c≦0.7、0.1≦d<0.9、かつa+b+c+d=1を満たす数である。)
で表されるオルガノポリシロキサン、
(B)一分子中に少なくとも2個のアルケニル基を有し、ケイ素原子結合水素原子を有さない直鎖状オルガノポリシロキサン(本組成物に対して、0~70質量%)、
(C)一分子中に少なくとも2個のケイ素原子結合水素原子を有するオルガノポリシロキサン{(A)成分と(B)成分中のアルケニル基の合計1モルに対して、本成分中のケイ素原子結合水素原子が0.1~5モルとなる量}、
(D)有効量のヒドロシリル化反応用触媒、および
任意で、(E)接着付与剤{上記(A)成分~(D)成分の合計100質量部に対して、0.01~10質量部}
を含有してなり、かつ、
組成物全体に対して1,3-ジビニル-1,3-ジフェニル-1,3-ジメチルジシロキサンの含有量が、0.05質量%~2.50質量%の範囲であることを特徴とする。 Preferably, the curable silicone composition of the present invention comprises
(A) Average unit formula:
(R 1 3 SiO 1/2 ) a (R 2 R 3 R 4 SiO 1/2 ) b (R 5 2 SiO 2/2 ) c (R 3 SiO 3/2 ) d
(Wherein R 1 is the same or different, an alkyl group having 1 to 12 carbon atoms or an alkenyl group having 2 to 12 carbon atoms, provided that at least one R 1 in one molecule is an alkenyl group having 2 to 12 carbon atoms) R 2 is an alkyl group having 1 to 12 carbon atoms; R 3 is a phenyl group; R 4 is an alkenyl group having 2 to 12 carbon atoms; R 4 is an alkenyl group having 2 to 12 carbon atoms; R 5 is the same or different; , An alkyl group having 1 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, or a phenyl group; a, b, c, and d are 0.00 ≦ a ≦ 0.45 and 0.01 ≦ b, respectively. ≦ 0.45, 0 ≦ c ≦ 0.7, 0.1 ≦ d <0.9, and a + b + c + d = 1.)
An organopolysiloxane represented by
(B) a linear organopolysiloxane having at least two alkenyl groups in one molecule and having no silicon-bonded hydrogen atoms (0 to 70% by mass based on the present composition),
(C) Organopolysiloxane having at least two silicon atom-bonded hydrogen atoms in one molecule {the silicon atom bond in this component with respect to a total of 1 mol of the alkenyl groups in component (A) and component (B) The amount of hydrogen atoms from 0.1 to 5 mol},
(D) An effective amount of a catalyst for hydrosilylation reaction, and, optionally, (E) an adhesion-imparting agent {0.01 to 10 parts by mass with respect to a total of 100 parts by mass of components (A) to (D) above}
And containing
The content of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane is in the range of 0.05% by mass to 2.50% by mass with respect to the entire composition. .
本発明の硬化性シリコーン組成物は、アルキルフェニルアルケニルシロキサン単位(R2R3R4SiO1/2;R2は炭素数1~12のアルキル基;R3はフェニル基;R4は炭素数2~12のアルケニル基である)を有するオルガノポリシロキサンを含有することを第一の特徴とする、当該オルガノポリシロキサンはヒドロシリル化反応性に優れ、かつ、ガス透過性が低い硬化物を形成することができる。当該オルガノポリシロキサンは他のシロキサン単位を含むものであってもよく、特に、分岐鎖状または樹脂状の分子構造を有することが好ましい。このようなオルガノポリシロキサンは、好適には、
平均単位式:
(R1 3SiO1/2)a(R2R3R4SiO1/2)b(R5 2SiO2/2)c(R3SiO3/2)d
で表される。 First, the curable silicone composition of the present invention will be described in detail.
The curable silicone composition of the present invention comprises an alkylphenylalkenylsiloxane unit (R 2 R 3 R 4 SiO 1/2 ; R 2 is an alkyl group having 1 to 12 carbon atoms; R 3 is a phenyl group; R 4 is a carbon number. The organopolysiloxane is characterized by containing an organopolysiloxane having 2 to 12 alkenyl groups), and the organopolysiloxane forms a cured product having excellent hydrosilylation reactivity and low gas permeability. be able to. The organopolysiloxane may contain other siloxane units, and particularly preferably has a branched or resinous molecular structure. Such organopolysiloxane is preferably
Average unit formula:
(R 1 3 SiO 1/2 ) a (R 2 R 3 R 4 SiO 1/2 ) b (R 5 2 SiO 2/2 ) c (R 3 SiO 3/2 ) d
It is represented by
R3SiX3
で表されるシラン化合物、一般式(II-1):
R1 3SiOSiR1 3
で表されるジシロキサンおよび/または一般式(II-2):
R1 3SiX
で表されるシラン化合物、および一般式(III-1):
R2R3R4SiOSiR2R3R4
で表されるジシロキサンおよび/または一般式(III-2):
R2R3R4SiX
で表されるシラン化合物を、酸もしくはアルカリの存在下、加水分解・縮合反応させる方法が挙げられる。 As a method for preparing such an organopolysiloxane, for example, the general formula (I):
R 3 Six 3
A silane compound represented by the general formula (II-1):
R 1 3 SiOS iR 1 3
And / or general formula (II-2):
R 1 3 SiX
A silane compound represented by formula (III-1):
R 2 R 3 R 4 SiOSiR 2 R 3 R 4
And / or general formula (III-2):
R 2 R 3 R 4 SiX
The method of hydrolyzing and condensing the silane compound represented by these in presence of an acid or an alkali is mentioned.
R3SiX3
で表されるシラン化合物は、オルガノポリシロキサンに、式:R3SiO3/2で表されるシロキサン単位を導入するための原料である。式中、R3は炭素数6~20のアリール基または炭素数7~20のアラルキル基であり、前記と同様の基が例示され、好ましくは、フェニル基またはナフチル基である。また、式中、Xはアルコキシ基、アシロキシ基、ハロゲン原子、または水酸基である。Xのアルコキシ基としては、メトキシ基、エトキシ基、プロポキシ基が例示される。また、Xのアシロキシ基としては、アセトキシ基が例示される。また、Xのハロゲン原子としては、塩素原子、臭素原子が例示される。 Formula (I):
R 3 Six 3
Is a raw material for introducing a siloxane unit represented by the formula: R 3 SiO 3/2 into an organopolysiloxane. In the formula, R 3 is an aryl group having 6 to 20 carbon atoms or an aralkyl group having 7 to 20 carbon atoms, and examples thereof are the same as those described above, and preferably a phenyl group or a naphthyl group. In the formula, X represents an alkoxy group, an acyloxy group, a halogen atom, or a hydroxyl group. Examples of the alkoxy group for X include a methoxy group, an ethoxy group, and a propoxy group. An example of the acyloxy group for X is an acetoxy group. Examples of the halogen atom for X include a chlorine atom and a bromine atom.
R1 3SiOSiR1 3
で表されるジシロキサンは、オルガノポリシロキサンに、式:R1 3SiO1/2で表されるシロキサン単位を導入するための原料である。式中、R1は同じかまたは異なる、炭素数1~12のアルキル基もしくは炭素数2~12のアルケニル基である。R1のアルキル基としては、前記と同様の基が例示され、好ましくは、メチル基である。また、R1のアルケニル基としては、前記と同様の基が例示され、好ましくは、ビニル基である。 In addition, general formula (II-1):
R 1 3 SiOS iR 1 3
Is a raw material for introducing a siloxane unit represented by the formula: R 1 3 SiO 1/2 into the organopolysiloxane. In the formula, R 1 is the same or different and is an alkyl group having 1 to 12 carbon atoms or an alkenyl group having 2 to 12 carbon atoms. Examples of the alkyl group for R 1 include the same groups as described above, and a methyl group is preferable. Examples of the alkenyl group for R 1 include the same groups as described above, and a vinyl group is preferable.
R1 3SiX
で表されるシラン化合物も、オルガノポリシロキサンに、式:R1 3SiO1/2で表されるシロキサン単位を導入するための原料である。式中、R1は同じかまたは異なる、炭素数1~12のアルキル基もしくは炭素数2~12のアルケニル基である。R1のアルキル基としては、前記と同様の基が例示され、好ましくは、メチル基である。また、R1のアルケニル基としては、前記と同様の基が例示され、好ましくは、ビニル基である。また、式中、Xはアルコキシ基、アシロキシ基、ハロゲン原子、または水酸基であり、前記と同様の基が例示される。 In addition, general formula (II-2):
R 1 3 SiX
Is also a raw material for introducing a siloxane unit represented by the formula: R 1 3 SiO 1/2 into the organopolysiloxane. In the formula, R 1 is the same or different and is an alkyl group having 1 to 12 carbon atoms or an alkenyl group having 2 to 12 carbon atoms. Examples of the alkyl group for R 1 include the same groups as described above, and a methyl group is preferable. Examples of the alkenyl group for R 1 include the same groups as described above, and a vinyl group is preferable. In the formula, X represents an alkoxy group, an acyloxy group, a halogen atom, or a hydroxyl group, and examples thereof include the same groups as described above.
R2R3R4SiOSiR2R3R4
で表されるジシロキサンは、オルガノポリシロキサンに、式:R2R3R4SiO1/2で表されるシロキサン単位を導入するための原料である。式中、R2は炭素数1~12のアルキル基であり、前記と同様の基が例示され、好ましくは、メチル基である。式中、R3はフェニル基である。また、式中、R4は炭素数2~12のアルケニル基であり、前記と同様の基が例示され、好ましくは、ビニル基である。 Formula (III-1):
R 2 R 3 R 4 SiOSiR 2 R 3 R 4
Is a raw material for introducing a siloxane unit represented by the formula: R 2 R 3 R 4 SiO 1/2 into the organopolysiloxane. In the formula, R 2 is an alkyl group having 1 to 12 carbon atoms, and examples thereof are the same groups as described above, preferably a methyl group. In the formula, R 3 is a phenyl group. In the formula, R 4 is an alkenyl group having 2 to 12 carbon atoms, and examples thereof are the same groups as described above, preferably a vinyl group.
R2R3R4SiX
で表されるシラン化合物も、オルガノポリシロキサンに、式:R2R3R4SiO1/2で表されるシロキサン単位を導入するための原料である。式中、R2は炭素数1~12のアルキル基であり、前記と同様の基が例示され、好ましくは、メチル基である。式中、R3はフェニル基である。式中、R4は炭素数2~12のアルケニル基であり、前記と同様の基が例示され、好ましくは、ビニル基である。また、式中、Xはアルコキシ基、アシロキシ基、ハロゲン原子、または水酸基であり、前記と同様の基が例示される。 Formula (III-2):
R 2 R 3 R 4 SiX
Is also a raw material for introducing a siloxane unit represented by the formula: R 2 R 3 R 4 SiO 1/2 into the organopolysiloxane. In the formula, R 2 is an alkyl group having 1 to 12 carbon atoms, and examples thereof are the same groups as described above, preferably a methyl group. In the formula, R 3 is a phenyl group. In the formula, R 4 is an alkenyl group having 2 to 12 carbon atoms, exemplified by the same groups as described above, and preferably a vinyl group. In the formula, X represents an alkoxy group, an acyloxy group, a halogen atom, or a hydroxyl group, and examples thereof include the same groups as described above.
本発明の硬化物は、上記の硬化性シリコーン組成物を硬化してなることを特徴とする。硬化物の形状は特に限定されず、例えば、シート状、フィルム状が挙げられる。硬化物は、これを単体で取り扱うこともできるが、光半導体素子等を被覆もしくは封止した状態で取り扱うことも可能である。 Next, the cured product of the present invention will be described in detail.
The cured product of the present invention is obtained by curing the above curable silicone composition. The shape of the cured product is not particularly limited, and examples thereof include a sheet shape and a film shape. The cured product can be handled alone, but can also be handled in a state where the optical semiconductor element or the like is covered or sealed.
本発明の光半導体装置は、上記の硬化性シリコーン組成物の硬化物により光半導体素子を封止してなることを特徴とする。このような本発明の光半導体装置としては、発光ダイオード(LED)、フォトカプラー、CCDが例示される。また、光半導体素子としては、発光ダイオード(LED)チップ、固体撮像素子が例示される。ただし、本発明の硬化性シリコーン組成物の用途は、これらに限定されるものではない。 Next, the optical semiconductor device of the present invention will be described in detail.
The optical semiconductor device of the present invention is characterized in that an optical semiconductor element is sealed with a cured product of the above curable silicone composition. Examples of such an optical semiconductor device of the present invention include a light emitting diode (LED), a photocoupler, and a CCD. Examples of the optical semiconductor element include a light emitting diode (LED) chip and a solid-state imaging element. However, the use of the curable silicone composition of the present invention is not limited to these.
攪拌機、還流冷却管、温度計付きの四口フラスコに、1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン 82.2g、水 143g、トリフルオロメタンスルホン酸 0.38g、およびトルエン 500gを投入し、攪拌下、フェニルトリメトキシシラン 524.7gを1時間かけて滴下した。滴下終了後、1時間加熱還流した。その後、冷却し、下層を分離し、トルエン溶液層を3回水洗した。水洗したトルエン溶液層にメチルグリシドキシプロピルジメトキシシラン 314gと水 130gと水酸化カリウム 0.50gとを投入し、1時間加熱還流した。続いて、メタノールを留去し、過剰の水を共沸脱水で除いた。4時間加熱還流した後、トルエン溶液を冷却し、酢酸 0.55gで中和した後、3回水洗した。水を除去した後、トルエンを減圧下に留去して、粘度8,500mPa・sの平均単位式:
(ViMe2SiO1/2)0.18(PhSiO3/2)0.53(EpMeSiO2/2)0.29
で表される接着付与剤を調製した。(式中、Viはビニル基、Phはフェニル基、Epはエポキシ基、Meはメチル基を示す) [Reference example: Synthesis example of adhesion promoter]
In a four-necked flask equipped with a stirrer, reflux condenser, and thermometer, 82.2 g of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 143 g of water, 0.38 g of trifluoromethanesulfonic acid, and toluene 500 g was added, and 524.7 g of phenyltrimethoxysilane was added dropwise over 1 hour with stirring. After completion of dropping, the mixture was heated to reflux for 1 hour. Then, it cooled, the lower layer was isolate | separated and the toluene solution layer was washed with
(ViMe2SiO1 / 2) 0.18 (PhSiO3 / 2) 0.53 (EpMeSiO2 / 2) 0.29
An adhesion-imparting agent represented by (In the formula, Vi represents a vinyl group, Ph represents a phenyl group, Ep represents an epoxy group, and Me represents a methyl group)
反応容器に、フェニルトリメトキシシラン 100g(0.5 mol)および1,3-ジビニル-1,3-ジフェニルジメチルジシロキサン 23.39g(0.075 mol)を投入し、予め混合した後、トリフルオロメタンスルホン酸 0.83 g( 5.5mmol)を投入し、撹拌下、水29.95 g( 1.6mol)を投入し、2時間加熱還流を行った。その後、85℃になるまで加熱常圧留去を行った。次いで、トルエン 22.1 gおよび水酸化ナトリウム0.4 g(10 mmol)を投入し、反応温度が120℃になるまで加熱常圧留去を行い、この温度で6時間反応させた。室温まで冷却し、酢酸 0.95g(15.8 mmol)を投入し、中和反応を行った。生成した塩を濾別した後、透明なレジン溶液を得た。このレジンは、数平均分子量が1,500で、質量平均分子量が1,900であり、1,3-ジビニル-1,3-ジフェニル-1,3-ジメチルジシロキサンの含有量が0.47質量%であった。 [Synthesis Example 1: Silicone Resin A]
Into a reaction vessel, 100 g (0.5 mol) of phenyltrimethoxysilane and 23.39 g (0.075 mol) of 1,3-divinyl-1,3-diphenyldimethyldisiloxane were added, mixed in advance, and then trifluoromethane. 0.83 g (5.5 mmol) of sulfonic acid was added, and 29.95 g (1.6 mol) of water was added with stirring, followed by heating under reflux for 2 hours. Then, heating and normal pressure distillation were performed until it became 85 degreeC. Subsequently, 22.1 g of toluene and 0.4 g (10 mmol) of sodium hydroxide were added, and heating and normal pressure distillation were performed until the reaction temperature reached 120 ° C., and the reaction was performed at this temperature for 6 hours. After cooling to room temperature, 0.95 g (15.8 mmol) of acetic acid was added to carry out a neutralization reaction. After the formed salt was filtered off, a clear resin solution was obtained. This resin has a number average molecular weight of 1,500, a mass average molecular weight of 1,900, and a content of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane of 0.47 mass. %Met.
合成例1で作成したレジンを、トルエンとメタノールの質量比1:2の混合溶媒により5回洗浄し、実質的に、1,3-ジビニル-1,3-ジフェニル-1,3-ジメチルジシロキサンを含有しない(=0.0質量%)レジンを得た。 [Synthesis Example 2: Silicone Resin B]
The resin prepared in Synthesis Example 1 was washed five times with a mixed solvent of toluene and methanol having a mass ratio of 1: 2, and substantially 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane was obtained. (= 0.0% by mass) of the resin was obtained.
合成例1で、水酸化ナトリウムの代わりに、水酸化カリウム 0.488g(8.7mmol)を投入した以外は同様にして、透明なレジン溶液を得た。このレジンは、数平均分子量が、1,530で、質量平均分子量が1,830であり、1,3-ジビニル-1,3-ジフェニル-1,3-ジメチルジシロキサンの含有量が5.90質量%であった。 [Synthesis Example 3: Silicone Resin C]
A transparent resin solution was obtained in the same manner as in Synthesis Example 1 except that 0.488 g (8.7 mmol) of potassium hydroxide was added instead of sodium hydroxide. This resin has a number average molecular weight of 1,530, a weight average molecular weight of 1,830, and a content of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane of 5.90. It was mass%.
予め質量を測定した試料に規定の質量の内部標準物質を加えてトルエンで希釈し、そのトルエン溶液をガスクロマトグラフィーでの内部標準物質とのピーク面積比から、試料中の質量%を計算した。 [Calibration method of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane]
An internal standard substance with a specified mass was added to a sample whose mass was measured in advance, diluted with toluene, and mass% in the sample was calculated from the peak area ratio of the toluene solution to the internal standard substance by gas chromatography.
硬化物の硬さは、JIS K 7215-1986「プラスチックのデュロメータ硬さ試験方法」に規定のタイプDデュロメータにより測定した。
[光半導体装置の耐熱衝撃性]
硬化性シリコーン組成物を用いて、150℃、2時間加熱して、図1で示される光半導体装置を20個作製した。この光半導体装置を、-40℃を30分間保持後、2分以内に125℃まで昇温して30分間保持の工程を繰り返し、各サイクル数での光半導体装置の不点灯の個数を数えた。
[光半導体装置の発光効率]
硬化性シリコーン組成物を用いて、100質量部に対して、(G)成分として、蛍光体 GAL530-L(INTEMATIX社製)50質量部とER6535(INTEMATIX社製)3.91質量部をデンタルミキサーで混合して蛍光体含有の硬化性シリコーン組成物を調製し、この硬化性シリコーン組成物を用いて、150℃、2時間加熱して、図1同様の光半導体装置を5個作製した。この光半導体装置に、400mAの電荷をかけ85℃、相対湿度85%の条件下で1000時間点灯し、光半導体装置の試験開始直後の発光効率を100%として、それぞれの発光効率の変化を測定し、その平均値を光半導体装置の発光効率とした。 [Hore Shore D]
The hardness of the cured product was measured with a type D durometer specified in JIS K 7215-1986 “Method for testing the durometer hardness of plastics”.
[Thermal shock resistance of optical semiconductor devices]
Using the curable silicone composition, it was heated at 150 ° C. for 2 hours to produce 20 optical semiconductor devices shown in FIG. This optical semiconductor device was held at −40 ° C. for 30 minutes, and then the temperature was raised to 125 ° C. within 2 minutes and held for 30 minutes. .
[Light emission efficiency of optical semiconductor device]
Using 100% by mass of the curable silicone composition, as a component (G), 50 parts by mass of phosphor GAL530-L (manufactured by INTERMATIX) and 3.91 parts by mass of ER6535 (manufactured by INTERMATIX) are used as a dental mixer. 1 to prepare a phosphor-containing curable silicone composition, and this curable silicone composition was heated at 150 ° C. for 2 hours to produce five optical semiconductor devices similar to FIG. This optical semiconductor device was charged with 400 mA and lit for 1000 hours under the conditions of 85 ° C. and 85% relative humidity, and the change in luminous efficiency was measured with the luminous efficiency immediately after starting the test of the optical semiconductor device as 100%. The average value was taken as the luminous efficiency of the optical semiconductor device.
合成例2で調製したシリコーンレジンB 6.83質量部、粘度3,000mPa・sの分子鎖両末端ジメチルビニルシロキシ基封鎖メチルフェニルポリシロキサン 0.82質量部、式:H(CH3)2SiO(C6H5)2SiOSi(CH3)2H で表されるオルガノトリシロキサン 2.10質量部(上記シリコーンレジン中と上記メチルフェニルポリシロキサン中のビニル基の合計1モルに対し、本成分中のケイ素原子結合水素原子が1となる量)、参考例1の接着付与剤0.25質量部、1,3,5,7-テトラメチル-1,3,5,7-テトラビニルシクロテトラシロキサンを0.02質量部、および白金-1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体の1,3,5,7-テトラメチル-1,3,5,7-テトラビニルシクロテトラシロキサン溶液(白金を4.0質量%含有)0.00063質量部、1,3-ジビニル-1,3-ジフェニルジメチルジシロキサン0.01質量部を混合して、粘度7,700mPa・sの硬化性シリコーン組成物を調製した。この組成物を150℃1時間で硬化させたところ、Shore-D 73の硬化物を得た。硬化物の表面はタックがなく平滑であった。その特性を表1に表す。この硬化性シリコーン組成物中の1,3-ジビニル-1,3-ジフェニル-1,3-ジメチルジシロキサンは0.10質量%であった。 [Example 1]
6.83 parts by mass of silicone resin B prepared in Synthesis Example 2, 0.82 parts by mass of methylphenylpolysiloxane blocked with dimethylvinylsiloxy group-blocked dimethylvinylsiloxy group having a viscosity of 3,000 mPa · s, formula: H (CH 3) 2 SiO (C 6 H 5 ) Organotrisiloxane represented by 2SiOSi (CH3) 2H 2.10 parts by mass (the silicon atom-bonded hydrogen atom in this component is contained in 1 mol of the total vinyl group in the silicone resin and methylphenylpolysiloxane) 1), 0.25 parts by mass of the adhesion-imparting agent of Reference Example 1, 0.02 parts by mass of 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane, And 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane solution of platinum-1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex Liquid (containing 4.0% by mass of platinum) 0.00063 parts by mass, 0.013 parts by mass of 1,3-divinyl-1,3-diphenyldimethyldisiloxane were mixed, and the viscosity was 7,700 mPa · s. A silicone composition was prepared. When this composition was cured at 150 ° C. for 1 hour, a cured product of Shore-D 73 was obtained. The surface of the cured product was smooth with no tack. The characteristics are shown in Table 1. The amount of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane in the curable silicone composition was 0.10% by mass.
実施例1において、1,3-ジビニル-1,3-ジフェニルジメチルジシロキサンの添加量を0.10質量部とした他は、同様にして、粘度6,200mPa・sの硬化性シリコーン組成物を調製した。この組成物を150℃1時間で硬化させたところ、Shore-D 69の硬化物を得た。硬化物の表面はタックがなく平滑であった。その特性を表1に表す。この硬化性シリコーン組成物中の1,3-ジビニル-1,3-ジフェニル-1,3-ジメチルジシロキサンは0.99質量%であった。 [Example 2]
A curable silicone composition having a viscosity of 6,200 mPa · s was prepared in the same manner as in Example 1 except that the amount of 1,3-divinyl-1,3-diphenyldimethyldisiloxane added was 0.10 parts by mass. Prepared. When this composition was cured at 150 ° C. for 1 hour, a cured product of Shore-D 69 was obtained. The surface of the cured product was smooth with no tack. The characteristics are shown in Table 1. The amount of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane in the curable silicone composition was 0.99% by mass.
実施例1において、1,3-ジビニル-1,3-ジフェニルジメチルジシロキサンの添加量を0.20質量部とした他は、同様にして、粘度5,000mPa・sの硬化性シリコーン組成物を調製した。この組成物を150℃1時間で硬化させたところ、Shore-D 64の硬化物を得た。硬化物の表面はタックがなく平滑であった。その特性を表1に表す。この硬化性シリコーン組成物中の1,3-ジビニル-1,3-ジフェニル-1,3-ジメチルジシロキサンは1.96質量%であった。 [Example 3]
In the same manner as in Example 1, except that the amount of 1,3-divinyl-1,3-diphenyldimethyldisiloxane added was 0.20 parts by mass, a curable silicone composition having a viscosity of 5,000 mPa · s was prepared. Prepared. When this composition was cured at 150 ° C. for 1 hour, a cured product of Shore-D 64 was obtained. The surface of the cured product was smooth with no tack. The characteristics are shown in Table 1. The 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane in the curable silicone composition was 1.96% by mass.
実施例1において、1,3-ジビニル-1,3-ジフェニルジメチルジシロキサンを添加しない(=0.0質量部)とした他は、同様にして、粘度7,700mPa・sの硬化性シリコーン組成物を調製した。この組成物を150℃1時間で硬化させたところ、Shore-D 73の硬化物を得た。硬化物の表面はタックがなく平滑であった。その特性を表1に表す。 この硬化性シリコーン組成物中の1,3-ジビニル-1,3-ジフェニル-1,3-ジメチルジシロキサンは0.0質量%であった。 [Comparative Example 1]
In the same manner as in Example 1, except that 1,3-divinyl-1,3-diphenyldimethyldisiloxane was not added (= 0.0 parts by mass), a curable silicone composition having a viscosity of 7,700 mPa · s was used. A product was prepared. When this composition was cured at 150 ° C. for 1 hour, a cured product of Shore-D 73 was obtained. The surface of the cured product was smooth with no tack. The characteristics are shown in Table 1. The 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane in the curable silicone composition was 0.0% by mass.
実施例1において、1,3-ジビニル-1,3-ジフェニルジメチルジシロキサンの添加量を0.50質量部とした他は、同様にして、粘度2300mPa・sの硬化性シリコーン組成物を調製した。この組成物を150℃1時間で硬化させたところ、Shore-D 44の硬化物を得た。硬化物の表面はタックがなく平滑であった。その特性を表1に表す。この硬化性シリコーン組成物中の1,3-ジビニル-1,3-ジフェニル-1,3-ジメチルジシロキサンは4.75質量%であった。 [Comparative Example 2]
A curable silicone composition having a viscosity of 2300 mPa · s was prepared in the same manner as in Example 1, except that the amount of 1,3-divinyl-1,3-diphenyldimethyldisiloxane added was 0.50 parts by mass. . When this composition was cured at 150 ° C. for 1 hour, a cured product of Shore-D 44 was obtained. The surface of the cured product was smooth with no tack. The characteristics are shown in Table 1. The 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane in the curable silicone composition was 4.75% by mass.
実施例1において、1,3-ジビニル-1,3-ジフェニルジメチルジシロキサンの添加量を0.91質量部とした他は、同様にして、粘度1100mPa・sの硬化性シリコーン組成物を調製した。この組成物を150℃1時間で硬化させたが、硬化物の表面は粘着性でShore-Dの測定はできなかった。その特性を表1に表す。この硬化性シリコーン組成物中の1,3-ジビニル-1,3-ジフェニル-1,3-ジメチルジシロキサンは8.33質量%であった。 [Comparative Example 3]
A curable silicone composition having a viscosity of 1100 mPa · s was prepared in the same manner as in Example 1, except that the amount of 1,3-divinyl-1,3-diphenyldimethyldisiloxane added was 0.91 part by mass. . This composition was cured at 150 ° C. for 1 hour, but the surface of the cured product was sticky and Shore-D measurement was not possible. The characteristics are shown in Table 1. The 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane in the curable silicone composition was 8.33% by mass.
1,3-ジビニル-1,3-ジフェニル-1,3-ジメチルジシロキサンの含有量が0.47質量%であり、ビニルメチルフェニルシロキシ基を含有するシリコーンレジン 5.95質量部、粘度3,000mPa・sの分子鎖両末端ジメチルビニルシロキシ基封鎖メチルフェニルポリシロキサン 1.80質量部、式:H(CH3)2SiO(C6H5)2SiOSi(CH3)2H で表されるオルガノトリシロキサン 1.98質量部(上記シリコーンレジン中と上記メチルフェニルポリシロキサン中のビニル基の合計1モルに対し、本成分中のケイ素原子結合水素原子が1となる量)、参考例1の接着付与剤0.25質量部、1,3,5,7-テトラメチル-1,3,5,7-テトラビニルシクロテトラシロキサンを0.02質量部、および白金-1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体の1,3,5,7-テトラメチル-1,3,5,7-テトラビニルシクロテトラシロキサン溶液(白金を4.0質量%含有)0.00063質量部を混合して、粘度2300mPa・sの硬化性シリコーン組成物を調製した。この組成物を150℃-1時間で硬化させたところ、Shore-D 53の硬化物を得た。硬化物の表面はタックがなく平滑であった。この硬化性シリコーン組成物中の1,3-ジビニル-1,3-ジフェニル-1,3-ジメチルジシロキサンの含有量は0.28質量%であった。前記の方法で当該硬化物を用いた光半導体装置の発光効率を評価したところ、566時間および997時間経過後の発光効率は、各々99.07%、96.13%であった。 [Example 4]
The content of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane is 0.47% by mass, 5.95 parts by mass of a silicone resin containing a vinylmethylphenylsiloxy group, a viscosity of 3, 000 mPa · s molecular chain both ends dimethylvinylsiloxy group-blocked methylphenylpolysiloxane 1.80 parts by mass, organotrisiloxane represented by the formula: H (CH 3) 2 SiO (C 6 H 5) 2 SiOS i (CH 3) 2 H 1.98 parts by mass (The amount of silicon atom-bonded hydrogen atoms in this component is 1 with respect to a total of 1 mol of vinyl groups in the silicone resin and methylphenylpolysiloxane), 0.25 part by mass of the adhesion-imparting agent of Reference Example 1 0.02, part by weight of 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane and platinum-1,3-divinyl-1 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane solution of 1,3,3-tetramethyldisiloxane complex (containing 4.0% by mass of platinum) 00063 parts by mass were mixed to prepare a curable silicone composition having a viscosity of 2300 mPa · s. When this composition was cured at 150 ° C. for 1 hour, a cured product of Shore-D 53 was obtained. The surface of the cured product was smooth with no tack. The content of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane in this curable silicone composition was 0.28% by mass. When the luminous efficiency of the optical semiconductor device using the cured product was evaluated by the method described above, the luminous efficiency after 566 hours and 997 hours were 99.07% and 96.13%, respectively.
1,3-ジビニル-1,3-ジフェニル-1,3-ジメチルジシロキサンの含有量が5.90質量%であり、ビニルメチルフェニルシロキシ基を含有するシリコーンレジン 5.95質量部、粘度3,000mPa・sの分子鎖両末端ジメチルビニルシロキシ基封鎖メチルフェニルポリシロキサン 1.80質量部、式:H(CH3)2SiO(C6H5)2SiOSi(CH3)2H で表されるオルガノトリシロキサン 1.98質量部(上記シリコーンレジン中と上記メチルフェニルポリシロキサン中のビニル基の合計1モルに対し、本成分中のケイ素原子結合水素原子が1となる量)、参考例1の接着付与剤0.25質量部、1,3,5,7-テトラメチル-1,3,5,7-テトラビニルシクロテトラシロキサンを0.02質量部、および白金-1,3-ジビニル-1,1,3,3-テトラメチルジシロキサン錯体の1,3,5,7-テトラメチル-1,3,5,7-テトラビニルシクロテトラシロキサン溶液(白金を4.0質量%含有)0.00063質量部を混合して、粘度2200mPa・sの硬化性シリコーン組成物を調製した。この組成物を150℃1時間で硬化させたところ、Shore-D 52の硬化物を得た。硬化物の表面はタックがなく平滑であった。この硬化性シリコーン組成物中の1,3-ジビニル-1,3-ジフェニル-1,3-ジメチルジシロキサンの含有量は3.51質量%であった。前記の方法で当該硬化物を用いた光半導体装置の発光効率を評価したところ、566時間および997時間経過後の発光効率は、各々95.47%、91.48%であった。 [Comparative Example 4]
The content of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane is 5.90% by mass, a silicone resin containing a vinylmethylphenylsiloxy group, 5.95 parts by mass, a viscosity of 3, 000 mPa · s molecular chain both ends dimethylvinylsiloxy group-blocked methylphenylpolysiloxane 1.80 parts by mass, organotrisiloxane represented by the formula: H (CH 3) 2 SiO (C 6 H 5) 2 SiOS i (CH 3) 2 H 1.98 parts by mass (The amount of silicon atom-bonded hydrogen atoms in this component is 1 with respect to a total of 1 mol of vinyl groups in the silicone resin and methylphenylpolysiloxane), 0.25 part by mass of the adhesion-imparting agent of Reference Example 1 0.02, part by weight of 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane and platinum-1,3-divinyl-1 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane solution of 1,3,3-tetramethyldisiloxane complex (containing 4.0% by mass of platinum) 00063 parts by mass were mixed to prepare a curable silicone composition having a viscosity of 2200 mPa · s. When this composition was cured at 150 ° C. for 1 hour, a cured product of Shore-D 52 was obtained. The surface of the cured product was smooth with no tack. The content of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane in the curable silicone composition was 3.51% by mass. When the luminous efficiency of the optical semiconductor device using the cured product was evaluated by the above-described method, the luminous efficiency after 566 hours and 997 hours was 95.47% and 91.48%, respectively.
実施例1~3(表1)に示すとおり、メチルフェニルビニルシロキサン単位を含有するシリコーンレジンを含有する硬化性シリコーン組成物であって、1,3-ジビニル-1,3-ジフェニルジメチルジシロキサンの含有量が0.10質量%、0.99質量%、または1.96質量%であるものは、401サイクル時点でも不良個数が2個以下であり、優れた耐熱衝撃性を示す。一方、比較例1~3(表1)に示すとおり、同様の硬化性シリコーン組成物であって、1,3-ジビニル-1,3-ジフェニル-1,3-ジメチルジシロキサンの含有量が0.0質量%、4.57質量%であるものは401サイクル時点でも不良個数が8個以上となり、耐熱衝撃性が明らかに劣る。また、同含有量が、8.33質量%であるものは、硬化性が明確に劣る。 [Overview of Examples and Comparative Examples]
As shown in Examples 1 to 3 (Table 1), a curable silicone composition containing a silicone resin containing a methylphenylvinylsiloxane unit, comprising 1,3-divinyl-1,3-diphenyldimethyldisiloxane When the content is 0.10% by mass, 0.99% by mass, or 1.96% by mass, the number of defects is 2 or less even at 401 cycles, and excellent thermal shock resistance is exhibited. On the other hand, as shown in Comparative Examples 1 to 3 (Table 1), the same curable silicone composition having a 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane content of 0 In the case of 0.0 mass% and 4.57 mass%, the number of defects becomes 8 or more even at 401 cycles, and the thermal shock resistance is clearly inferior. In addition, when the content is 8.33% by mass, the curability is clearly inferior.
2 リードフレーム
3 リードフレーム
4 ボンディングワイヤ
5 枠材
6 硬化性シリコーン組成物の硬化物 DESCRIPTION OF
Claims (5)
- アルキルフェニルアルケニルシロキサン単位(R2R3R4SiO1/2;R2は炭素数1~12のアルキル基;R3はフェニル基;R4は炭素数2~12のアルケニル基である)を有するオルガノポリシロキサンを含有してなり、かつ、
組成物全体に対して1,3-ジビニル-1,3-ジフェニル-1,3-ジメチルジシロキサンの含有量が、0.0質量%よりも大きく、3.0質量%未満である、硬化性シリコーン組成物。 An alkylphenylalkenylsiloxane unit (R 2 R 3 R 4 SiO 1/2 ; R 2 is an alkyl group having 1 to 12 carbon atoms; R 3 is a phenyl group; R 4 is an alkenyl group having 2 to 12 carbon atoms) Comprising an organopolysiloxane having, and
Curability in which the content of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane is greater than 0.0% by mass and less than 3.0% by mass with respect to the entire composition Silicone composition. - (A)平均単位式:
(R1 3SiO1/2)a(R2R3R4SiO1/2)b(R5 2SiO2/2)c(R3SiO3/2)d
(式中、R1は同じかまたは異なる、炭素数1~12のアルキル基もしくは炭素数2~12のアルケニル基、但し、一分子中の少なくとも一つのR1は炭素数2~12のアルケニル基;R2は炭素数1~12のアルキル基;R3はフェニル基;R4は炭素数2~12のアルケニル基;R4は炭素数2~12のアルケニル基;R5は同じかまたは異なる、炭素数1~12のアルキル基、炭素数2~12のアルケニル基、もしくはフェニル基;a、b、c、およびdは、それぞれ、0.00≦a≦0.45、0.01≦b≦0.45、0≦c≦0.7、0.1≦d<0.9、かつa+b+c+d=1を満たす数である。)
で表されるオルガノポリシロキサン、
(B)一分子中に少なくとも2個のアルケニル基を有し、ケイ素原子結合水素原子を有さない直鎖状オルガノポリシロキサン(本組成物に対して、0~70質量%)、
(C)一分子中に少なくとも2個のケイ素原子結合水素原子を有するオルガノポリシロキサン{(A)成分と(B)成分中のアルケニル基の合計1モルに対して、本成分中のケイ素原子結合水素原子が0.1~5モルとなる量}、および
(D)有効量のヒドロシリル化反応用触媒
を含有してなり、かつ、
組成物全体に対して1,3-ジビニル-1,3-ジフェニル-1,3-ジメチルジシロキサンの含有量が、0.05質量%~2.50質量%の範囲である、請求項1に記載の硬化性シリコーン組成物。 (A) Average unit formula:
(R 1 3 SiO 1/2 ) a (R 2 R 3 R 4 SiO 1/2 ) b (R 5 2 SiO 2/2 ) c (R 3 SiO 3/2 ) d
(Wherein R 1 is the same or different, an alkyl group having 1 to 12 carbon atoms or an alkenyl group having 2 to 12 carbon atoms, provided that at least one R 1 in one molecule is an alkenyl group having 2 to 12 carbon atoms) R 2 is an alkyl group having 1 to 12 carbon atoms; R 3 is a phenyl group; R 4 is an alkenyl group having 2 to 12 carbon atoms; R 4 is an alkenyl group having 2 to 12 carbon atoms; R 5 is the same or different; , An alkyl group having 1 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, or a phenyl group; a, b, c, and d are 0.00 ≦ a ≦ 0.45 and 0.01 ≦ b, respectively. ≦ 0.45, 0 ≦ c ≦ 0.7, 0.1 ≦ d <0.9, and a + b + c + d = 1.)
An organopolysiloxane represented by
(B) a linear organopolysiloxane having at least two alkenyl groups in one molecule and having no silicon-bonded hydrogen atoms (0 to 70% by mass based on the present composition),
(C) Organopolysiloxane having at least two silicon atom-bonded hydrogen atoms in one molecule {the silicon atom bond in this component with respect to a total of 1 mol of the alkenyl groups in component (A) and component (B) An amount of hydrogen atoms from 0.1 to 5 moles}, and (D) an effective amount of a catalyst for hydrosilylation reaction, and
The content of 1,3-divinyl-1,3-diphenyl-1,3-dimethyldisiloxane in the whole composition is in the range of 0.05% to 2.50% by weight. The curable silicone composition described. - 更に、(E)接着付与剤{上記(A)成分~(D)成分の合計100質量部に対して、0.01~10質量部}を含む、請求項1または2記載の硬化性シリコーン組成物。 3. The curable silicone composition according to claim 1, further comprising (E) an adhesion-imparting agent {0.01 to 10 parts by mass with respect to 100 parts by mass in total of the components (A) to (D)]. object.
- 請求項1乃至3のいずれか1項記載の硬化性シリコーン組成物を硬化してなる硬化物。 Hardened | cured material formed by hardening | curing the curable silicone composition of any one of Claims 1 thru | or 3.
- 請求項1乃至3のいずれか1項記載の硬化性シリコーン組成物の硬化物で光半導体素子が封止された光半導体装置。 An optical semiconductor device in which an optical semiconductor element is sealed with a cured product of the curable silicone composition according to claim 1.
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