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WO2018061896A1 - Transfer method, mounting method, transfer device, and mounting device - Google Patents

Transfer method, mounting method, transfer device, and mounting device Download PDF

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Publication number
WO2018061896A1
WO2018061896A1 PCT/JP2017/033809 JP2017033809W WO2018061896A1 WO 2018061896 A1 WO2018061896 A1 WO 2018061896A1 JP 2017033809 W JP2017033809 W JP 2017033809W WO 2018061896 A1 WO2018061896 A1 WO 2018061896A1
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WO
WIPO (PCT)
Prior art keywords
transfer
transfer substrate
substrate
led chip
line
Prior art date
Application number
PCT/JP2017/033809
Other languages
French (fr)
Japanese (ja)
Inventor
新井 義之
Original Assignee
東レエンジニアリング株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2017009029A external-priority patent/JP2018060993A/en
Application filed by 東レエンジニアリング株式会社 filed Critical 東レエンジニアリング株式会社
Priority to CN201780060085.4A priority Critical patent/CN109791959B/en
Priority to KR1020197007271A priority patent/KR102286376B1/en
Publication of WO2018061896A1 publication Critical patent/WO2018061896A1/en
Priority to US16/364,833 priority patent/US10755958B2/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Definitions

  • the present invention relates to a transfer method, a mounting method, a transfer device, and a mounting device for transferring and mounting an LED chip with high accuracy.
  • the LED chip has been downsized to reduce cost, and efforts are being made to mount the downsized LED chip with high speed and high accuracy.
  • an LED used for a display is required to be mounted at high speed with an accuracy of several ⁇ m, which is an LED chip of 50 ⁇ m ⁇ 50 ⁇ m or less called a micro LED.
  • an LED chip formed in a lattice shape on a wafer is irradiated with a belt-shaped laser beam, transferred to a transfer substrate 200 in batches for each line or a plurality of lines, and then transferred to the transfer substrate 200.
  • a configuration is described in which a plurality of later LED chips are irradiated with a band-shaped laser beam and transferred onto a transfer substrate 300 in a lump for each line or a plurality of lines.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2010-161221
  • Patent Document 1 has a problem that when the LED chip is transferred to each transfer substrate, the LED chip may be displaced due to the influence of air resistance.
  • An object of the present invention is to solve the above-mentioned problems, eliminate the influence of air resistance during transfer, and transfer and mount an LED chip with high accuracy.
  • the present invention is a transfer method for transferring an LED chip having one surface held by a transfer substrate to a transfer substrate, A transferred substrate placement step of placing the transferred substrate so as to face the surface opposite to the one surface of the LED chip with a gap; A transfer step of separating the LED chip from the transfer substrate by irradiating the transfer substrate with a laser beam and urging the LED chip toward the transfer substrate to transfer the LED chip to the transfer substrate;
  • the present invention provides a transfer method characterized in that at least the transfer step is performed in a vacuum environment.
  • the present invention provides a mounting method for mounting a dicing LED chip having a first surface held by a carrier board on a circuit board, and separating the LED chip from the carrier board. Then, a first transfer step of transferring and holding the second surface side opposite to the first surface of the LED chip on the first transfer substrate, and holding the second surface on the first transfer substrate A second transfer substrate disposing step of disposing a second transfer substrate so as to face the first surface of the LED chip with a gap, and irradiating the first transfer substrate with a line-shaped laser beam.
  • a plurality of LED chips for one line are separated from the first transfer substrate and urged toward the second transfer substrate, and the first transfer substrate and the second transfer substrate are moved at different speeds,
  • the second transfer step of transferring the first surface side of the LED chip to the second transfer substrate by relatively moving in the orthogonal direction, and the second transfer with respect to the line-shaped laser light A second transfer substrate rotating step of disposing the second transfer substrate by rotating the substrate by 90 ° about the normal line; and the first of the LED chips holding the first surface on the second transfer substrate.
  • the second transfer substrate is separated from the second transfer substrate and urged toward the circuit substrate, and the second transfer substrate and the circuit substrate are relatively different from each other in a direction perpendicular to the line-shaped laser beam at different speeds.
  • Move the LED A first mounting step of bonding a bump of the LED chip and an electrode of the circuit board by transferring the second surface side of the chip onto the circuit board, and at least the second transfer step, and
  • the present invention provides a mounting method characterized in that the first mounting step is performed in a vacuum environment.
  • the second transfer step and the first mounting step are performed in a vacuum environment, so that the influence of air resistance during transfer can be eliminated and the LED chip can be transferred with high accuracy, and the LED chip is arranged on the carrier substrate. It can be transferred to a circuit board at high speed and mounted at an arbitrary pitch different from the pitch of the LED chip.
  • the first mounting step may be performed again such that a new LED chip is disposed between the LED chips in the longitudinal direction of the line-shaped laser light that has already been transferred to the circuit board. Good.
  • the present invention provides a mounting method for mounting a dicing LED chip having a first surface held by a carrier board on a circuit board, and separating the LED chip from the carrier board.
  • a third transfer substrate disposing step for disposing the third transfer substrate so as to face each other, and irradiating the second transfer substrate with a line-shaped laser beam so that a plurality of LED chips for one line are disposed on the second transfer substrate.
  • To the third transfer substrate And the second transfer substrate and the third transfer substrate are moved relative to each other in the direction perpendicular to the line-shaped laser light at different speeds to thereby form the first LED chip.
  • the mounting method is characterized in that the second transfer step and the third transfer step are performed in a vacuum environment.
  • the present invention provides a transfer device for transferring an LED chip held on a transfer substrate to a transfer target substrate, wherein the transfer device makes a vacuum environment inside the transfer device, and the transfer Opposite the laser light irradiation unit for irradiating the substrate with laser light, the transfer substrate holding unit that holds the transfer substrate and is movable in the first direction, and the LED chip held on the transfer substrate with a gap.
  • the transfer substrate is held so that the transfer substrate holding portion is movable at least in the first direction, and the LED chip is separated from the transfer substrate, and is urged and transferred toward the transfer substrate.
  • the present invention provides a transfer apparatus comprising the laser beam irradiation unit, the transfer substrate holding unit, and a control unit that controls the transfer substrate holding unit.
  • the present invention provides a mounting apparatus for mounting an LED chip on a circuit board, wherein the mounting apparatus is evacuated to a vacuum environment, and the transfer board on which the LED chips are arranged.
  • a laser beam irradiating unit that irradiates a line-shaped laser beam, a transfer substrate holding unit that holds the transfer substrate and is movable in a first direction, and a gap with the LED chip held on the transfer substrate.
  • a control unit that controls the transfer substrate and the transfer substrate and the transfer substrate or the circuit substrate at different speeds relative to each other in a direction orthogonal to the line-shaped laser beam. Moved A mounting apparatus for controlling the plurality of LED chips for one line corresponding to the line-shaped laser light to be separated and energized and transferred to the substrate to be transferred or the circuit board. It is to provide.
  • a heating mechanism that includes a thermocompression bonding head for thermocompression bonding the LED chip to the circuit substrate held by the transfer substrate holding unit, and that heats the transfer substrate or circuit substrate held by the transfer substrate holding unit.
  • the control unit may be configured to control the LED chip to be thermocompression bonded to the circuit board by heating the thermocompression bonding head and the transfer substrate holding unit to the same temperature.
  • thermocompression bonding step the LED chip can be reliably bonded to the circuit board, and high-precision mounting can be realized.
  • the transfer method, the mounting method, the transfer device, and the mounting device of the present invention it is possible to transfer and mount the LED chip with high accuracy by eliminating the influence of air resistance during transfer.
  • Example 1 of this invention It is a figure explaining the transfer method in Example 1 of this invention. It is a figure explaining the transfer apparatus in Example 1 of this invention. It is a figure explaining the 1st transcription
  • Example 2 of this invention It is a figure explaining the mounting apparatus in Example 2 of this invention. It is a figure explaining the 1st transcription
  • FIG. 1 is a diagram for explaining a transfer method in Embodiment 1 of the present invention.
  • FIG. 2 is a diagram illustrating the transfer device according to the first embodiment of the present invention.
  • the LED chip 2 is formed by growing the first surface from the carrier substrate 1 made of sapphire, and is the surface opposite to the first surface. The second surface is exposed to the outside and bumps are formed. Further, the carrier substrate 1 has a circular shape or a rectangular shape, and there is a substrate made of gallium arsenide other than sapphire. The LED chips 2 are diced, and a plurality (hundreds to tens of thousands) of LED chips 2 are two-dimensionally arranged on the carrier substrate 1.
  • a small LED chip 2 called a micro LED has a size of 50 ⁇ m ⁇ 50 ⁇ m or less, and is arranged at a pitch obtained by adding a dicing width to this size.
  • Such a small LED chip 2 is required to be mounted on a circuit board with high accuracy (for example, accuracy of 1 ⁇ m or less).
  • the LED chip 2 in Example 1 inspects each LED chip 2 in advance and removes defective LED chips. Specifically, a laser beam stronger than that in the case of laser lift-off described later is irradiated to burn down defective chips.
  • the LED chips 2 are separated one by one from the carrier substrate 1 which is a transfer substrate, and the second surface side of the LED chip 2 is directly transferred to the circuit substrate 5 which is a transfer target substrate. That is, the carrier substrate 1 made of sapphire is irradiated with a spot-like laser beam 51 made of an excimer laser, and one LED chip 2 is separated from the carrier substrate 1. This is to decompose a part of the GaN layer in the carrier substrate 1 on the first surface side of the LED chip 2 into Ga and N to separate the LED chip 2, and N (nitrogen) is decomposed during the decomposition. Since it occurs, it can be urged toward the circuit board 5. This technique is called laser lift-off, and the separated and energized LED chip 2 is transferred to the circuit board 5.
  • a gap is provided between the LED chip 2 and the circuit board 5 so as to be opposed to each other and the laser beam 51 is irradiated.
  • the laser light 51 may be irradiated while the LED chip 2 and the circuit board 5 are in contact with each other.
  • the first transfer process may be performed in a vacuum environment. By executing in a vacuum environment, even if the above-described gap is provided, the LED chip 2 is not subjected to air resistance when the LED chip 2 is energized, thereby preventing displacement.
  • a transfer layer (not shown) is provided on the surface of the circuit board 5 in advance, and the transferred LED chip 2 is held on the transfer layer, and the LED chip is mounted on the circuit board 5 as shown in FIG. 2 is held.
  • the transfer layer is sticky at room temperature, has a property of being solidified by heat or ultraviolet light, and being decomposed by irradiation with laser light to generate gas. That is, the LED chip 2 is urged toward the transfer layer of the circuit board 5 having adhesiveness, and after landing, the transfer layer of the circuit board 5 is solidified by the heat of the LED chip 2 and the LED chip 2 is held. Is done. If the heat of the LED chip 2 is low, the transfer layer may be heated after the LED chip 2 has landed. At this time, the bump on the second surface of the LED chip 2 is in contact with the electrode of the circuit board 5. Further, the LED chip 2 may be mounted by pressurizing and heating to surely bond the bumps of the LED chip 2 and the electrodes of the circuit board 5.
  • the LED chips 2 held on the transfer substrate can be transferred to the transfer substrate one by one. Therefore, it is particularly effective when repairing.
  • the transfer from the carrier substrate to the circuit substrate is taken as an example.
  • the present invention is not limited to this, and the LED from the carrier substrate to the transfer substrate described later, the transfer substrate to the transfer substrate, and the transfer substrate to the circuit substrate is described.
  • the present invention can also be applied to chip transfer. Further, by forming the laser beam in a line shape, it is possible to transfer a plurality of LED chips arranged in one line at a time as in Example 2 described later.
  • FIG. 2 is a diagram illustrating the transfer device according to the first embodiment of the present invention.
  • the transfer device 50 includes a evacuation unit (not shown), and the whole can be made into a vacuum environment as a vacuum chamber.
  • the transfer device 50 holds the transfer substrate and can move in the X direction.
  • the transfer substrate holding unit 54 is located below the transfer substrate holding unit 54 and is opposed to the transfer substrate with a gap.
  • the transfer target substrate holding portion 55 that can move in the X, Y, Z, and ⁇ directions, the laser light irradiation portion 52 that irradiates the transfer substrate with the laser light 51, and the LED chip 2 from the transfer substrate.
  • a control unit (not shown) that controls the laser beam irradiation unit 52, the transfer substrate holding unit 54, and the transfer substrate holding unit 55 is provided so as to transfer the LED chip 2 to the transfer substrate by separating and energizing the LED chip 2.
  • the laser beam irradiation unit 52 is provided fixed to the transfer device 50.
  • the spot-shaped laser beam 51 is irradiated so as to irradiate one LED chip 2.
  • a camera 53 is provided at a position close to the laser beam irradiation unit 52. The camera 53 recognizes the position of the transfer substrate or the transfer substrate, and moves the transfer substrate holding part 55 in the X, Y, or ⁇ direction to perform alignment.
  • Example 1 the transfer substrate refers to the carrier substrate 1, and the transfer substrate refers to the circuit substrate 5. That is, the carrier substrate 1 is held by the transfer substrate holding unit 54, and the circuit board 5 is held by the transfer substrate holding unit 55.
  • the transfer substrate holding portion 55 is moved in the Z direction to transfer the transfer substrate holding portion.
  • the LED chip 2 of the carrier substrate 1 held by the 54 and the circuit board 5 held by the transferred substrate holding part 55 are brought into contact with each other.
  • the transfer substrate holding part 54 holding the carrier substrate 1 moves in the X direction, or
  • the transferred substrate holding part 55 holding the circuit board 5 can be moved and aligned in at least one of the X direction, the Y direction, or the ⁇ direction, and the laser beam irradiation part 52 can be spot-shaped at a desired position.
  • the laser light 51 is irradiated, the LED chip 2 is separated, and the LED chip 2 is transferred by being biased toward the circuit substrate 5 held by the transfer substrate holding portion 55. In this case, the biased LED chip 2 is not affected by the air resistance and can be prevented from being displaced by setting the inside of the transfer device 50 to a vacuum environment by the vacuuming unit.
  • the transfer substrate holder 55 is configured to be movable in the X direction, the Y direction, the Z direction, and the ⁇ direction.
  • the present invention is not necessarily limited to this, and may be changed as appropriate for convenience. Is possible. For example, if rotational alignment is not necessary, there is no need to move in the ⁇ direction, and there is no need to move in the Z direction unless there is a need to change between the transfer substrate and the transfer substrate.
  • the transfer substrate holding part 54 may be movable in the Y direction.
  • Example 1 a transfer method for transferring an LED chip having one surface held by a transfer substrate to a transfer substrate, A transferred substrate placement step of placing the transferred substrate so as to face the surface opposite to the one surface of the LED chip with a gap; A transfer step of separating the LED chip from the transfer substrate by irradiating the transfer substrate with a laser beam and urging the LED chip toward the transfer substrate to transfer the LED chip to the transfer substrate;
  • the transfer method characterized in that at least the transfer step is performed in a vacuum environment, the influence of air resistance during transfer can be eliminated, and the LED chip can be transferred with high accuracy.
  • a transfer device for transferring the LED chip held on the transfer substrate to the transfer substrate, a vacuuming unit for making the inside of the transfer device a vacuum environment, A laser beam irradiation unit for irradiating the transfer substrate with a laser beam; A transfer substrate holding unit that holds the transfer substrate and is movable in a first direction; A transfer substrate holding portion that holds the transfer substrate so as to face the LED chip held on the transfer substrate with a gap, and is movable at least in the first direction; A control unit for controlling the laser beam irradiation unit, the transfer substrate holding unit, and the transferred substrate holding unit so as to separate the LED chip from the transfer substrate and urge and transfer the LED chip toward the transferred substrate; ,
  • the transfer device characterized in that the LED chip can be transferred with high accuracy by eliminating the influence of air resistance during transfer.
  • Example 2 is different from Example 1 in that the LED chip 2 held on the carrier substrate is mounted on the circuit board at high speed.
  • a mounting method according to the second embodiment of the present invention will be described with reference to FIGS.
  • FIG. 3 is a diagram illustrating the first transfer process of the mounting method according to the second embodiment of the present invention.
  • FIG. 4 is a diagram illustrating the second transfer process of the mounting method according to the second embodiment of the present invention.
  • FIG. 5 is a diagram illustrating the start of the first mounting step of the mounting method according to the second embodiment of the present invention.
  • FIG. 6 is a diagram for explaining the middle of the first mounting step of the mounting method according to the second embodiment of the present invention.
  • FIG. 3 is a diagram illustrating the first transfer process of the mounting method according to the second embodiment of the present invention.
  • FIG. 4 is a diagram illustrating the second transfer process of the mounting method according to the second embodiment of the present invention.
  • FIG. 5 is a diagram illustrating the start of the first mounting step of the mounting method according
  • FIG. 7 is a diagram for explaining the end of the first mounting step of the mounting method according to the second embodiment of the present invention.
  • FIG. 8 is a diagram illustrating the implementation of RGB three colors by the mounting method according to the second embodiment of the present invention.
  • FIG. 9 is a diagram for explaining the mounting apparatus according to the second embodiment of the present invention.
  • the first transfer step is executed to separate the LED chip 2 from the carrier substrate 1 and transfer and hold the second surface side of the LED chip 2 on the first transfer substrate 3.
  • the carrier substrate 1 is irradiated with a laser beam 51 made of an excimer laser in a line shape, and either the carrier substrate 1 or the line-shaped laser beam 51 is relatively moved in the X direction to move the entire carrier substrate 1. Irradiate with laser light.
  • a part of the GaN layer in the carrier substrate 1 made of sapphire is decomposed into Ga and N, and the LED chip 2 is separated and biased toward the first transfer substrate 3. This method is called laser lift-off, and the separated LED chip 2 is energized and transferred to the first transfer substrate 3 by generating N (nitrogen) when GaN is decomposed.
  • a gap is provided between the LED chip 2 and the first transfer substrate 3 to irradiate the laser beam 51.
  • this gap is not necessarily required, and the LED chip 2 and the first transfer substrate are not necessarily required.
  • 3 may be configured to irradiate the laser beam 51 in a state where it is in contact with 3. By not providing this gap, it is possible to prevent the LED chip 2 from being displaced due to being biased by receiving air resistance.
  • the first transfer process may be performed in a vacuum environment. By performing the operation in a vacuum environment, even if the above-described gap is provided, it is possible to prevent positional deviation without receiving air resistance when the LED chip 2 is energized.
  • a transfer layer (not shown) is provided in advance on the surface of the first transfer substrate 3, and the transferred LED chip 2 is held by this transfer layer, and the first transfer substrate as shown in FIG.
  • the LED chip 2 is held on the 3.
  • the transfer layer is sticky at room temperature, has a property of being solidified by heat or ultraviolet light, and being decomposed by irradiation with laser light to generate gas. That is, after the LED chip 2 is urged toward the transfer layer of the first transfer substrate 3 having adhesiveness and landed, the transfer layer of the first transfer substrate 3 is solidified by the heat of the LED chip 2 and the LED Chip 2 is held. If the heat of the LED chip 2 is low, the transfer layer may be heated after the LED chip 2 has landed. At this time, the bump on the second surface of the LED chip 2 is in contact with the first transfer substrate 3.
  • a second transfer substrate placement step is executed. That is, the second transfer substrate 4 is disposed so as to face the first surface of the LED chip 2 holding the second surface on the first transfer substrate 3 with a gap.
  • the first transfer substrate 3 is disposed on the upper side with the LED chip 2 being held facing down, and the second transfer substrate 4 is disposed on the lower side of the first transfer substrate 3 (see FIG. 4).
  • the second transfer substrate placement step may be performed in a vacuum environment or may not necessarily be a vacuum environment.
  • the second transfer process is performed in a vacuum environment. That is, the first transfer substrate 3 is moved in the X direction at a first speed, and the second transfer substrate 4 is moved in the X direction at a second speed that is faster than the first speed. Further, the moving first transfer substrate 3 is irradiated with laser light 51 in a line along the Y direction to reduce the adhesive force of the transfer layer, so that a plurality of LEDs are provided for each line in the Y direction from the first transfer substrate 3. Chip 2 is separated. At this time, the LED chip 2 separated as in the first transfer step is urged toward the second transfer substrate 4, and the first surface side of the LED chip 2 is transferred.
  • the first transfer substrate 3 is moved in the X direction at a first speed
  • the second transfer substrate 4 is moved in the X direction at a second speed higher than the first speed.
  • the plurality of LED chips 2 are separated for each line, and urged toward the second transfer substrate 4 to perform the first transfer.
  • the LED chips 2 arranged on the substrate 3 in the X direction at the first pitch and in the Y direction at the second pitch are arranged on the second transfer substrate 4 in the X direction at the third pitch wider than the first pitch.
  • Transfer can be arranged in the Y direction at a pitch. This third pitch can be the pitch of the LED chips on the circuit board constituting the display.
  • the transferred LED chip 2 has its first surface transferred to the second transfer substrate 4 so that the bumps of the LED chip 2 face outward.
  • the LED chip 2 separated and energized from the first transfer substrate 3 By performing the second transfer process in a vacuum environment, it is possible to prevent the LED chip 2 separated and energized from the first transfer substrate 3 from being displaced and receiving the air resistance and being transferred to the second transfer substrate 4. . Furthermore, in order to prevent displacement, it is desirable that the gap between the first transfer substrate 3 and the second transfer substrate 4 be as narrow as possible. In Example 2, a slight clearance is provided at the height of the LED chip 2. The added distance is set.
  • a transfer layer (not shown) is provided on the surface of the second transfer substrate 4.
  • the LED chip 2 separated from the first transfer substrate 3 is urged and adhered and held on a transfer layer provided on the surface of the second transfer substrate 4.
  • the transfer layer is sticky at room temperature, has a property of being solidified by heat or ultraviolet light, and being decomposed by irradiation with laser light to generate gas. That is, the transfer layer of the first transfer substrate 3 is decomposed by the laser beam to generate gas and generate a biasing force, and the LED chip 2 is biased toward the transfer layer of the second transfer substrate 4 having adhesiveness. This is because the transfer layer of the second transfer substrate 4 is solidified and held by the heat of the LED chip 2 after landing. If the heat of the LED chip 2 is low, the transfer layer may be heated after the LED chip 2 has landed.
  • the first transfer substrate 3 and the second transfer substrate 4 are both moved in the X direction when the LED chip 2 is transferred.
  • the configuration may be such that the linear laser beam 51 is irradiated along the X direction, and the first transfer substrate 3 and the second transfer substrate 4 are moved in the Y direction.
  • the configuration is such that the linear laser beam 51 is irradiated along the Y direction, and the first transfer substrate 3 is moved in the opposite direction such as the X direction and the second transfer substrate 4 is the ⁇ X direction.
  • the first transfer substrate 3 and the second transfer substrate 4 may be configured to move relative to each other in a direction perpendicular to the line-shaped laser light 51 at different speeds.
  • the LED chips 2 held on the first transfer substrate 3 can be transferred to the second transfer substrate 4 at different pitches. Further, the LED chip 2 can be transferred to the second transfer substrate 4 at an arbitrary pitch by adjusting the first speed and the second speed.
  • the first transfer substrate 3 is arranged on the upper side and the second transfer substrate 4 is arranged on the lower side.
  • the present invention is not limited to this, and can be changed as appropriate for the convenience of arrangement. It is.
  • the first transfer substrate 3 is disposed on the lower side as it is in the first transfer step
  • the second transfer substrate 4 is disposed on the upper side
  • the lower first transfer substrate 3 is directed to the upper second transfer substrate 4.
  • the LED chip 2 may be energized and transferred.
  • the second transfer process may be performed in a state where the first transfer substrate 3 and the second transfer substrate 4 are opposed to each other with a gap and are set up along the Z direction.
  • a second transfer substrate rotating step is performed in which the second transfer substrate 4 is rotated by 90 ° about the normal line as an axis, and the LED chip holding side is disposed on the upper side.
  • rotating the second transfer substrate 4 by 90 ° about the normal line as an axis means that the direction of the second transfer substrate 4 is rotated by 90 ° with respect to the longitudinal direction of the line-shaped laser beam.
  • the second transfer substrate rotation step may be executed in a vacuum environment or may not be in a vacuum environment.
  • a circuit board placement step is executed. That is, the circuit board 5 is disposed so as to face the second surface of the LED chip 2 holding the first surface on the second transfer substrate 4 with a gap.
  • the second transfer substrate is disposed on the upper side and the circuit substrate 5 is disposed on the lower side so that the held LED chip 2 faces downward (see FIG. 5).
  • This circuit board placement step may also be performed in a vacuum environment, but it need not necessarily be in a vacuum environment.
  • the first mounting process is executed in a vacuum environment. That is, the second transfer substrate 4 is moved in the X direction at a third speed, and the circuit board 5 is moved in the X direction at a fourth speed that is faster than the third speed. Further, the moving second transfer substrate 4 is irradiated with laser light 51 in a line along the Y direction to decompose the transfer layer, and the plurality of LED chips 2 are separated from the second transfer substrate 4 for each line in the Y direction. Then, it is biased toward the circuit board 5. Then, the second surface side of the LED chip 2 is transferred to the circuit board 5.
  • the circuit board 5 has electrodes, and the electrodes and the bumps on the second surface of the LED chip 2 are joined.
  • the second transfer substrate 4 is moved in the X direction at a third speed
  • the circuit board 5 is moved in the X direction at a fourth speed higher than the third speed.
  • the laser light 51 is irradiated in a line in the Y direction of the transfer substrate 4 to separate and energize the plurality of LED chips 2 for each line, thereby rotating the second transfer substrate rotated step by 90 °.
  • the LED chips 2 arranged on the transfer substrate 4 in the X direction at the second pitch and in the Y direction at the third pitch are arranged on the circuit board 5 in the X direction and the third pitch at a fourth pitch wider than the second pitch. Transfer can be arranged in the Y direction at a pitch.
  • the third pitch and the fourth pitch can be the pitch of the LED chips on the circuit board constituting the display.
  • FIGS. 5 to 7 show how the LED chip 2 is transferred line by line while the second transfer board 4 and the circuit board 5 move in the X direction.
  • FIG. 5 shows a state of the beginning of the first mounting process
  • FIG. 6 shows a state in the middle of the first mounting process
  • FIG. 7 shows a final state of the first mounting process.
  • the second transfer substrate 4 and the circuit substrate 5 are moved in the X direction when the LED chip 2 is transferred.
  • the second transfer substrate 4 and the circuit substrate 5 are not necessarily limited to this, and can be changed as appropriate according to the convenience of the apparatus. It is.
  • the configuration may be such that the linear laser beam 51 is irradiated along the X direction and the second transfer substrate 4 and the circuit substrate 5 are moved in the Y direction.
  • the configuration may be such that the line-shaped laser beam 51 is irradiated along the Y direction, and the second transfer substrate 4 is moved in the X direction and the circuit substrate 4 is moved in the opposite directions such as the ⁇ X direction.
  • the second transfer substrate 4 and the circuit substrate 5 may be configured to move relative to each other in a direction perpendicular to the line-shaped laser beam 51 at different speeds.
  • the second transfer substrate rotating step is executed, and the first mounting step is executed with the second transfer substrate 4 arranged in a vertically long shape and the circuit board 5 arranged in a horizontally long shape as shown in FIG.
  • the present invention is not necessarily limited to this, and can be appropriately changed depending on the convenience of the apparatus or the like.
  • the second transfer substrate rotating step is not executed, the second transfer substrate 4 is left in the horizontal arrangement, the longitudinal direction of the line-shaped laser light is rotated by 90 °, and the circuit board 5 is arranged in the vertical arrangement.
  • You may comprise so that a process and a 1st mounting process may be performed. That is, the direction of the second transfer substrate 4 may be rotated by 90 ° with respect to the longitudinal direction of the line-shaped laser beam.
  • the second transfer substrate is arranged on the upper side and the circuit board 5 is arranged on the lower side so that the held LED chip 2 faces downward. Changes can be made as appropriate.
  • the second transfer substrate is disposed on the lower side as it is in the second transfer step
  • the circuit board 5 is disposed on the upper side
  • the LED chip 2 is directed from the lower second transfer substrate 4 toward the upper circuit substrate 5. It may be energized and transferred.
  • the first mounting process may be performed in a state where the second transfer substrate 4 and the circuit substrate 5 are opposed to each other with a gap and are standing in the Z direction.
  • the first mounting process is executed in a vacuum environment as described above.
  • a vacuum environment By executing the first mounting step in a vacuum environment, it is possible to prevent the LED chip 2 separated and energized from the second transfer substrate 4 from being displaced and receiving the air resistance and being transferred to the circuit substrate 5.
  • the gap between the second transfer substrate 4 and the circuit substrate 5 be as narrow as possible.
  • a slight clearance is added to the height of the LED chip 2. The distance is set.
  • a transfer layer (not shown) is provided on the surface of the circuit board 5.
  • the LED chip 2 separated from the second transfer substrate 4 is transferred to a transfer layer provided on the surface of the circuit substrate 5 by an urging force.
  • the transfer layer is sticky at room temperature, has a property of being solidified by heat or ultraviolet light, and being decomposed by irradiation with laser light to generate gas. That is, the transfer layer of the second transfer substrate 4 is decomposed by the laser beam to generate gas and generate a biasing force, and the LED chip 2 is biased toward the transfer layer of the circuit board 5 having adhesiveness. After landing, the transfer layer of the circuit board 5 is solidified and held by the heat of the LED chip 2. If the heat of the LED chip 2 is low, the transfer layer may be heated after the LED chip 2 has landed.
  • the LED chip 2 is arranged on the circuit board 5 in the X direction at a fourth pitch wider than the second pitch and in the Y direction at a third pitch wider than the first pitch.
  • the circuit board 5 or the second transfer board 4 is shifted in the Y direction by a first pitch, that is, at least by the distance of the length of the LED chip 2 in the Y direction, and the first mounting process is performed again, thereby the Y direction.
  • the second kind of LED chips 2 can be arranged in a line.
  • the second kind of LED chips 2 can be arranged in a line in the direction. Furthermore, similarly, by executing the third first mounting step, it is possible to arrange the third types of LED chips 2 in one line in the Y direction.
  • the first LED chip 2 is a red LED chip 2 (R)
  • the second LED chip 2 is a green LED chip 2 (G)
  • the third LED chip 2 is a blue LED chip. If 2 (B), the red, green, and blue LED chips 2 can be arranged without gaps (see FIG. 8).
  • the second transfer substrate 4 or the circuit board 5 is shifted by the first pitch in the Y direction and the second first mounting process is executed, whereby the LED chip 2 held on the second transfer substrate 4 is performed.
  • the second type LED chip 2 can be transferred to the circuit board 5 through the side without passing over the LED chip 2 already transferred onto the circuit board 5.
  • the gap between the second transfer board 4 and the circuit board 5 can be set to a gap obtained by adding a slight clearance to the height of the LED chip 2, minimizing the biasing distance of the LED chip 2, It is possible to prevent misalignment and stably transfer with high accuracy.
  • the LED chip 2 held on the circuit board 5 may be pressed and heated by a head or the like, so that the bumps of the LED chip 2 and the electrodes of the circuit board 5 are securely bonded.
  • the transfer layer is provided on the surface of the circuit board 5.
  • the transfer layer is not necessarily limited to this, and can be appropriately changed for convenience.
  • the bumps provided on the second surface of the LED chip 2 and the electrodes of the circuit board 5 may be directly bonded in the first mounting step.
  • the LED chip 2 may be dropped or misaligned.
  • repair may be executed.
  • the circuit board 5 is disposed so as to face the second surface of the carrier substrate 1 opposite to the first surface of the LED chip 2 with a gap, and then laser light is applied to the carrier substrate 1.
  • the LED chip 2 is separated from the carrier substrate 1 one by one, the LED chip 2 is urged onto the circuit board 5 and the LED chip 2 is transferred to the circuit board 5 to mount the mounting process. Repair by running in a vacuum environment. Of course, if the misaligned LED chip 2 is on the circuit board 5, it is removed in advance by a head or the like.
  • FIG. 9 is a diagram for explaining the mounting apparatus according to the second embodiment of the present invention.
  • the mounting apparatus 150 includes a head (not shown) capable of pressing and heating the LED chip transferred to the circuit board 5 in that the laser beam irradiation unit 52 irradiates the line-shaped laser beam 51. This is different from the transfer device 50 in the first embodiment.
  • the mounting apparatus 150 includes a vacuuming unit (not shown), and the whole can be made into a vacuum environment as a vacuum chamber. Further, the mounting apparatus 150 holds the transfer substrate and can move in the X direction.
  • the transfer substrate holding unit 54 is located below the transfer substrate holding unit 54 and is opposed to the transfer substrate with a gap.
  • the transfer target substrate holding portion 55 that can move in the X, Y, Z, and ⁇ directions, the laser light irradiation portion 52 that irradiates the transfer substrate with the laser light 51, and the LED chip 2 from the transfer substrate.
  • a control unit that controls the laser beam irradiation unit 52, the transfer substrate holding unit 54, and the transfer substrate holding unit 55 is provided so as to transfer the LED chip 2 to the transfer substrate by separating and energizing the LED chip 2.
  • a head (not shown) that pressurizes and heats the LED chip 2 transferred to the circuit board 5 is provided.
  • the laser beam irradiation unit 52 is provided fixed to the mounting apparatus 150.
  • the line-shaped laser beam 51 is irradiated so as to irradiate one line of LED chips 2.
  • a camera 53 is provided at a position close to the laser beam irradiation unit 52. The camera 53 recognizes the position of the transfer substrate or the transfer substrate, and moves the transfer substrate holding part 55 in the X, Y, or ⁇ direction to perform alignment.
  • the transfer substrate refers to the carrier substrate 1 in the first transfer step, the first transfer substrate 3 in the second transfer step, or the second transfer substrate 4 in the first mounting step
  • the transferred substrate refers to the first transfer substrate 3 in the first transfer step, the second transfer substrate 4 in the second transfer step, or the circuit substrate 5 in the first mounting step.
  • the carrier substrate 1 is held by the transfer substrate holding part 54, and the first transfer substrate 3 is held by the transferred substrate holding part 55.
  • the second transfer step the first transfer substrate 3 is reversed and held on the transfer substrate holding portion 54, and the second transfer substrate 4 is held on the transfer substrate holding portion 55.
  • the second transfer substrate 4 is turned upside down and held by the transfer substrate holding portion 54, and the circuit board 5 is held by the transfer substrate holding portion 55.
  • the second transfer substrate 4 when the first transfer substrate 3 is disposed on the lower side, the first transfer substrate 3 is held on the transfer substrate holding portion 55, and the second transfer substrate 4 is held on the upper transfer substrate holding portion 54. You may make it hold
  • the second transfer substrate 4 may be held as it is on the upper transfer substrate holding portion 54 and the circuit board 5 may be held on the transfer substrate holding portion 55.
  • the first transfer substrate 3 is held on the upper transfer substrate holding portion 54, the second transfer substrate 4 is held on the lower transfer target substrate holding portion 55, and the second transfer step is performed.
  • the first transfer process is executed by holding the second transfer substrate 4 as it is in the lower transfer substrate holding portion 55 and holding the circuit board 5 in the upper transfer substrate holding portion 54. It may be.
  • the transfer substrate holding portion 55 is moved in the Z direction to transfer the transfer substrate holding portion 54.
  • the LED chip 2 held on the transfer substrate held on the substrate is brought into contact with the transfer substrate.
  • the transfer substrate holding unit 54 and the transfer substrate holding unit 55 during the laser beam irradiation described later do not move in the X direction.
  • the transfer substrate holding portion 54 holding the transfer substrate at each speed.
  • the laser beam irradiation unit 52 irradiates the laser beam 51 in a line shape, and a plurality of LED chips 2 per line. Is transferred to the transfer target substrate held by the transfer target substrate holding unit 55 while being urged.
  • the evacuation unit maintains the inside of the vacuum chamber of the transfer device 50 in a vacuum environment.
  • each substrate can be arranged or rotated by a transport unit (not shown) constituted by a robot or the like.
  • each process is executed by one mounting apparatus 150.
  • the present invention is not necessarily limited to this and can be appropriately changed for convenience.
  • three mounting apparatuses 150 may be arranged, and the first transfer process, the second transfer process, and the first mounting process may be executed by each mounting apparatus 150.
  • each substrate in the second transfer substrate arranging step, the second transfer substrate rotating step, and the circuit board arranging step, each substrate may be arranged or rotated by a transport unit (not shown) constituted by a robot or the like.
  • the laser beam irradiation unit 52 is fixed to the mounting apparatus 150 and the transfer substrate holding unit 54 and the transfer substrate holding unit 55 are moved.
  • the present invention is not limited to this. It can be changed as appropriate according to the convenience of the apparatus.
  • the transfer substrate holding unit 54 may be fixed to the mounting device 150 and the laser beam irradiation unit 52 and the transfer substrate holding unit 55 may be moved, or the transfer substrate holding unit 55 may be mounted on the mounting device 150. It is good also as a structure which fixes and provides and moves the laser beam irradiation part 52 and the transfer substrate holding part 54.
  • Example 2 the mounting method of mounting the LED chip after dicing with the first surface held by the carrier substrate on the circuit board, A first transfer step of separating the LED chip from the carrier substrate and transferring and holding a second surface side opposite to the first surface of the LED chip to the first transfer substrate; A second transfer substrate disposing step of disposing a second transfer substrate so as to face the first surface of the LED chip holding the second surface on the first transfer substrate with a gap;
  • the first transfer substrate is irradiated with a line-shaped laser beam to separate a plurality of LED chips for one line from the first transfer substrate and urge the LED chips toward the second transfer substrate, and the first transfer
  • the substrate and the second transfer substrate are moved relative to each other in a direction perpendicular to the line-shaped laser light at different speeds, and the first surface side of the LED chip is transferred to the second transfer substrate.
  • a second transfer step A second transfer substrate rotating step of disposing the second transfer substrate by rotating the second transfer substrate by 90 ° about the normal line with respect to the line-shaped laser beam;
  • a circuit board disposing step of disposing the circuit board so as to face the second surface of the LED chip holding the first surface on the second transfer substrate with a gap;
  • a plurality of LED chips for one line are separated from the second transfer substrate by irradiating the second transfer substrate with a line-shaped laser beam and urged toward the circuit board, and the second transfer substrate and The LED chip is transferred by moving the circuit board relative to the line-shaped laser light at different speeds in a direction perpendicular to the circuit board, and transferring the second surface side of the LED chip to the circuit board.
  • Example 2 a mounting device for mounting an LED chip on a circuit board, A evacuation unit for creating a vacuum environment in the mounting apparatus; A laser beam irradiation unit that irradiates the transfer substrate on which the LED chips are arranged with a line-shaped laser beam; A transfer substrate holding unit that holds the transfer substrate and is movable in a first direction; A transfer substrate holding unit that holds the transfer substrate or the circuit substrate so as to face the LED chip held on the transfer substrate with a gap, and is movable in at least the first direction; A controller that controls the laser beam irradiation unit, the transfer substrate holding unit, and the transfer substrate holding unit; The control unit moves the transfer substrate and the transfer substrate or the circuit substrate relative to each other in a direction perpendicular to the line-shaped laser beam at different speeds, thereby converting the line-shaped laser beam into the line-shaped laser beam.
  • the mounting device characterized in that the plurality of LED chips corresponding to one line are separated and energized to control the transfer to the transferred substrate or the circuit board, thereby reducing the influence of air resistance during transfer.
  • the LED chip can be transferred and mounted with high accuracy, and at the same time, a plurality of LED chips can be transferred and mounted at high speed for each line.
  • Example 3 of the present invention is different from Example 2 in the first transfer process.
  • a mounting method according to the third embodiment of the present invention will be described with reference to FIG.
  • FIG. 10 is a diagram illustrating the first transfer process of the mounting method according to the third embodiment of the present invention.
  • the second surface of the LED chip 2 having the first surface held by the carrier substrate 1 is attached to an adhesive layer (not shown) on the surface of the first transfer substrate 3 and transferred.
  • the side opposite to the side holding the LED chip 2 of the carrier substrate 1 is back-ground by the grinder 56. That is, the carrier substrate 1 is removed by scraping from the side opposite to the side where the LED chip 2 is provided. In particular, since the laser lift-off cannot be applied to a red LED, this back grinding method is used.
  • the first transfer process in the third embodiment may be performed by providing the mounting apparatus 150 with the grinder 56, or may be performed by arranging a back-glide apparatus having the grinder 56 in the previous process of the mounting apparatus 150. .
  • Example 3 when the laser lift-off method is not used, the first transfer process can be executed by the back-grind method.
  • Example 4 of the present invention is different from Example 2 in the process after the second transfer substrate rotating process.
  • a fourth embodiment will be described with reference to FIGS.
  • FIG. 11 is a diagram illustrating the beginning of the third transfer step of the mounting method according to the fourth embodiment of the present invention.
  • FIG. 12 is a diagram for explaining the middle of the third transfer step of the mounting method according to the fourth embodiment of the present invention.
  • FIG. 13 is a diagram illustrating the last of the third transfer step of the mounting method according to the fourth embodiment of the present invention.
  • FIG. 14 is a diagram illustrating repair by the mounting method according to the fourth embodiment of the present invention.
  • FIG. 15 is a diagram illustrating a fourth transfer process and a second mounting process of the mounting method according to the fourth embodiment of the present invention.
  • FIG. 16 is a diagram for explaining LED chip transfer at the time of repair in the mounting method according to the fourth embodiment of the present invention.
  • Example 4 is mainly executed when repair is required. That is, after the second transfer substrate rotation step, the third transfer substrate placement step, the third transfer step, the repair step, the fourth transfer substrate placement step, the fourth transfer step, the circuit board placement step, and the second mounting step are sequentially performed. Execute.
  • a third transfer substrate arranging step is first executed.
  • the third transfer substrate placement step the third transfer substrate 105 is placed so that the first surface faces the second surface of the LED chip 2 held on the second transfer substrate 4 with a gap (see FIG. 11).
  • the second transfer substrate 4 is disposed on the upper side with the held LED chip 2 facing down, and the third transfer substrate 105 is disposed on the lower side.
  • the third transfer substrate placement step may be executed in a vacuum environment or not in a vacuum environment.
  • the third transfer process is performed in a vacuum environment.
  • the second transfer substrate 4 is moved in the X direction at a third speed
  • the third transfer substrate 105 is moved in the X direction at a fourth speed higher than the third speed.
  • the moving second transfer substrate 4 is irradiated with laser light 51 in a line shape to reduce the adhesive force of the transfer layer, and the plurality of LED chips 2 are separated from the second transfer substrate 4 for each line in the Y direction.
  • the LED chip 2 is urged toward the third transfer substrate 105 by the urging force generated by disassembling the transfer layer, and the second surface side is transferred.
  • the third transfer substrate 105 is provided with a transfer layer (not shown), and the transfer layer is solidified and held by the heat of the LED chip 2 that has been biased.
  • the second surface side of the transferred LED chip 2 is transferred to the third transfer substrate 105, so that the bumps of the LED chip 2 face the third transfer substrate 105 side.
  • the second transfer substrate 4 is moved in the X direction at a third speed, and the third transfer substrate 105 is moved in the X direction at a fourth speed higher than the third speed, while the second transfer substrate 4 is moved in the Y direction.
  • the second transfer substrate 4 rotated by 90 ° in the second transfer substrate rotation process has a second pitch X.
  • LED chips 2 arranged in the Y direction at the third pitch are arranged on the third transfer substrate 105 in the X direction at the fourth pitch wider than the second pitch and in the Y direction at the third pitch.
  • the third pitch and the fourth pitch can be the pitch of the LED chips on the circuit board constituting the display.
  • FIG. 11 to 13 show how the LED chip 2 is transferred while the second transfer substrate 4 and the third transfer substrate 105 move in the X direction.
  • FIG. 11 shows the beginning of the third transfer step
  • FIG. 12 shows the state during the third transfer step
  • FIG. 13 shows the final state of the third transfer step.
  • the third transfer process is performed in a vacuum environment as described above.
  • the LED chip 2 separated and energized from the second transfer substrate 4 receives air resistance and is transferred to the third transfer substrate 105 with a positional shift. Can be prevented. Further, in order to further prevent the displacement, it is desirable that the gap between the second transfer substrate 4 and the third transfer substrate 105 be as narrow as possible.
  • a slight clearance is provided at the height of the LED chip 2. Is set to the distance added.
  • the LED is applied to the third transfer substrate 105 in the X direction at a fourth pitch wider than the second pitch and in the Y direction at a third pitch wider than the first pitch.
  • Chip 2 is arranged.
  • the third transfer substrate 105 or the second transfer substrate 4 is moved in the Y direction by the first pitch, that is, at least the length of the LED chip in the direction (Y direction), and the third transfer step is executed again.
  • the second kind of LED chips 2 can be arranged in a line in the Y direction. That is, the third transfer step is executed again so that a new LED chip 2 is arranged between the LED chips in the longitudinal direction of the line-shaped laser light already transferred to the third transfer substrate 105 in the third transfer step.
  • the second kind of LED chips 2 can be arranged in a line in the Y direction.
  • the third types of LED chips 2 can be arranged in one line in the Y direction.
  • the first LED chip 2 is a red LED chip 2 (R)
  • the second LED chip 2 is a green LED chip 2 (G)
  • the third LED chip 2 is a blue LED chip. If 2 (B), the red, green, and blue LED chips 2 can be arranged without gaps (see FIG. 14).
  • the second transfer substrate 4 or the third transfer substrate 105 is shifted by the first pitch in the Y direction, and the third transfer process is performed again, whereby the LED chip 2 held on the second transfer substrate 4.
  • the gap between the second transfer substrate 4 and the third transfer substrate 105 can be set to a gap obtained by adding a slight clearance to the height of the LED chip 2, thereby preventing misalignment when the LED chip 2 is dropped.
  • it can be stably transferred with high accuracy.
  • the LED chip 2 may be dropped 121 or displaced as shown in FIG. In such a case, a repair process is performed.
  • the carrier substrate 1 or the second transfer substrate 4 and the third transfer substrate are opposed to each other with a gap, and the laser beam is transferred to the carrier substrate 1 or the second transfer substrate 4 in a vacuum environment.
  • the LED chips 2 are transferred to the third transfer substrate 105 and repaired one by one.
  • the misaligned LED chip 2 is on the third transfer substrate 105, it is removed in advance by a head or the like.
  • the misaligned LED chip 2 is easily removed. For example, it is difficult to remove the LED chip 2 mounted on the circuit board 5 as in the second embodiment, but the LED chip 2 on the third transfer substrate 105 in the fourth embodiment is easy to remove, and the repair process is executed. Is suitable.
  • a fourth transfer substrate in which the fourth transfer substrate 106 is arranged so as to face the first surface of the LED chip 2 having the second surface held by the repaired third transfer substrate 105 with a gap.
  • An arrangement process is executed (see FIG. 15A).
  • the third transfer substrate 105 is disposed on the upper side with the held LED chip 2 facing downward, and the fourth transfer substrate 106 is disposed on the lower side.
  • the fourth transfer substrate placement step may be executed in a vacuum environment or not in a vacuum environment.
  • the LED chip 2 is separated from the third transfer substrate 105 by irradiating the third transfer substrate 105 with a line-shaped laser beam, and the LED chip 2 is urged toward the fourth transfer substrate 106.
  • a fourth transfer step is performed to transfer the second first surface side to the fourth transfer substrate 106 (see FIG. 15A).
  • the transferred LED chip 2 has its first surface transferred to the fourth transfer substrate 106, so that the bumps of the LED chip 2 face away from the fourth transfer substrate 106, that is, outward.
  • This fourth transfer process is performed in a vacuum environment.
  • the fourth transfer process is executed in a vacuum environment.
  • the fourth transfer process is not necessarily limited to this, and can be changed as appropriate.
  • the fourth transfer process when the fourth transfer process is performed in a state where the first surface side of the LED chip 2 held on the third transfer substrate 105 is in contact with the fourth transfer substrate 106, the influence of the air resistance during energization Therefore, it may be performed at atmospheric pressure instead of a vacuum environment.
  • a plurality of LED chips 2 are arranged for each column by irradiating the line-shaped laser light while the RGB LED chips 2 are arranged at the fourth pitch in the X direction and the first pitch in the Y direction. Is transferred to the fourth transfer substrate 106.
  • a circuit board arranging step is performed in which the circuit board 107 is arranged so as to face the second surface of the LED chip 2 held on the fourth transfer board 106 with a gap (see FIG. 15B). ).
  • the fourth transfer substrate 106 is disposed on the upper side with the held LED chip 2 facing downward, and the circuit substrate 107 is disposed on the lower side.
  • the circuit board placement step may be executed in a vacuum environment or not in a vacuum environment.
  • the second mounting process is executed in a vacuum environment (see FIG. 15B).
  • the LED chip 2 is separated from the fourth transfer substrate 106 by irradiating the fourth transfer substrate 106 with a line-shaped laser beam, and the LED chip 2 is urged toward the circuit substrate 107 to
  • the second surface side of the chip 2 is transferred to the circuit board 107, and the bumps provided on the second surface of the LED chip 2 and the circuit board 107 are brought into contact with each other and mounted.
  • the LED chip 2 held on the circuit board 107 may be pressed and heated by a head or the like, so that the bumps of the LED chip 2 and the electrodes of the circuit board 107 are securely bonded.
  • the second mounting process is performed in a vacuum environment.
  • the second mounting process is not necessarily limited to this and can be changed as appropriate.
  • the second resistance is affected by air resistance during energization. Since it is not, you may perform by atmospheric pressure instead of a vacuum environment.
  • the repair of the LED chip 2 that has been detached or misaligned can be executed on the transfer substrate, and stable mounting can be achieved.
  • Example 5 differs from Examples 1 to 4 in that the LED chip held on the transfer substrate is thermocompression bonded to the circuit board and then the transfer substrate is removed.
  • a mounting method according to the fifth embodiment of the present invention will be described with reference to FIGS.
  • FIG. 17 is a diagram for explaining the 1A transfer process of the mounting method according to the fifth embodiment of the present invention.
  • FIG. 18 is a diagram illustrating the 1B transfer process of the mounting method according to the fifth embodiment of the present invention.
  • FIG. 19 is a diagram illustrating the second transfer process of the mounting method according to the fifth embodiment of the present invention.
  • FIG. 20 is a diagram illustrating a third transfer process of the mounting method according to the fifth embodiment of the present invention.
  • FIG. 21 is a diagram for explaining the thermocompression bonding step of the mounting method according to the fifth embodiment of the present invention.
  • FIG. 22 is a diagram illustrating a third transfer substrate removal step of the mounting method according to the fifth embodiment of the present invention.
  • the first A transfer step is executed to separate the LED chip 2 from the carrier substrate 1 and transfer and hold the second surface side of the LED chip 2 on the first A transfer substrate 203.
  • the carrier substrate 1 is irradiated with a laser beam 51 made of an excimer laser in a line shape, and either the carrier substrate 1 or the line-shaped laser beam 51 is relatively moved in the X direction to move the entire carrier substrate 1. Irradiate with laser light.
  • a part of the GaN layer in the carrier substrate 1 made of sapphire is decomposed into Ga and N, and the LED chip 2 is separated and urged toward the first A transfer substrate 203. This method is called laser lift-off, and the separated LED chip 2 is energized and transferred to the first A transfer substrate 203 by generating N (nitrogen) when GaN is decomposed.
  • a gap is provided between the LED chip 2 and the first A transfer substrate 203 to irradiate the laser beam 51.
  • this gap is not always necessary, and the LED chip 2 and the first A transfer substrate are not necessarily required. It may be configured to irradiate the laser beam 51 in a state where it is in contact with 203. By not providing this gap, it is possible to prevent the LED chip 2 from being displaced due to being biased by receiving air resistance.
  • the 1A transfer process may be performed in a vacuum environment. By performing the operation in a vacuum environment, even if the above-described gap is provided, it is possible to prevent positional deviation without receiving air resistance when the LED chip 2 is energized.
  • a transfer layer (not shown) is provided in advance on the surface of the first A transfer substrate 203, and the transferred LED chip 2 is held by this transfer layer, as shown in FIG.
  • the LED chip 2 is held at 203.
  • the transfer layer is sticky at room temperature, has a property of being solidified by heat or ultraviolet light, and being decomposed by irradiation with laser light to generate gas. That is, the LED chip 2 is urged toward the transfer layer of the first A transfer substrate 203 having adhesiveness, and after landing, the transfer layer of the first A transfer substrate 203 is solidified by the heat of the LED chip 2 and the LED Chip 2 is held. If the heat of the LED chip 2 is low, the transfer layer may be heated after the LED chip 2 has landed. At this time, the bump on the second surface of the LED chip 2 is in contact with the first A transfer substrate 203.
  • the 1B transfer process is performed.
  • the first A transfer substrate 203 is arranged so that the first surface of the LED chip 2 faces the first B transfer substrate 213. Then, the LED chip 2 is separated from the first A transfer substrate 203, and the first surface side of the LED chip 2 is transferred and held on the first B transfer substrate 213.
  • the first A transfer substrate 203 is irradiated with a laser beam 51 made of an excimer laser in a line shape, and either the first A transfer substrate 203 or the line laser beam 51 is relatively moved in the X direction. The entire 1A transfer substrate 203 is irradiated with laser light.
  • the 1B transfer process may be performed in a vacuum environment. By performing the operation in a vacuum environment, even if the above-described gap is provided, it is possible to prevent positional deviation without receiving air resistance when the LED chip 2 is energized. At this time, the first surface of the LED chip 2 is in contact with the first B transfer substrate 213.
  • a second transfer substrate placement step is executed. That is, the second transfer substrate 4 is disposed so as to face the second surface of the LED chip 2 holding the first surface on the first B transfer substrate 213 with a gap. At this time, in Example 5, the 1B transfer substrate 213 is disposed on the upper side with the LED chip 2 being held facing down, and the second transfer substrate 4 is disposed on the lower side of the first B transfer substrate 213 (see FIG. 19).
  • the second transfer substrate placement step may be performed in a vacuum environment or may not necessarily be a vacuum environment.
  • the second transfer process is performed in a vacuum environment. That is, the first B transfer substrate 213 is moved in the X direction at a first speed, and the second transfer substrate 4 is moved in the X direction at a second speed that is faster than the first speed. Further, the moving 1B transfer substrate 213 is irradiated with laser light 51 in a line along the Y direction to reduce the adhesive force of the transfer layer, and a plurality of LEDs are provided for each line from the 1B transfer substrate 213 in the Y direction. Chip 2 is separated. At this time, the LED chip 2 separated as in the 1B transfer step is urged toward the second transfer substrate 4, and the second surface side of the LED chip 2 is transferred.
  • the first transfer substrate 213 is moved in the X direction at a first speed
  • the second transfer substrate 4 is moved in the X direction at a second speed higher than the first speed.
  • the plurality of LED chips 2 are separated for each line and urged toward the second transfer substrate 4, thereby
  • the LED chips 2 arranged on the transfer substrate 213 in the X direction at the first pitch and in the Y direction at the second pitch are arranged on the second transfer substrate 4 in the X direction at a third pitch wider than the first pitch.
  • This third pitch can be the pitch of the LED chips on the circuit board constituting the display.
  • the second surface side of the transferred LED chip 2 is transferred to the second transfer substrate 4 so that the bumps of the LED chip 2 face the second transfer substrate 4 side.
  • the LED chip 2 separated and energized from the first B transfer substrate 213 By performing the second transfer process in a vacuum environment, it is possible to prevent the LED chip 2 separated and energized from the first B transfer substrate 213 from being displaced due to air resistance and being transferred to the second transfer substrate 4. . Furthermore, in order to prevent displacement, it is desirable that the gap between the first B transfer substrate 213 and the second transfer substrate 4 be as narrow as possible. In the second embodiment, a slight clearance is provided at the height of the LED chip 2. The added distance is set.
  • the first B transfer substrate 213 and the second transfer substrate 4 are both moved in the X direction when the LED chip 2 is transferred. It can be changed as appropriate.
  • the linear laser beam 51 may be irradiated along the X direction, and the first B transfer substrate 213 and the second transfer substrate 4 may be moved in the Y direction. Further, the linear laser beam 51 is irradiated along the Y direction, and the first B transfer substrate 213 is moved in the X direction and the second transfer substrate 4 is moved in the opposite directions such as the ⁇ X direction.
  • the first B transfer substrate 213 and the second transfer substrate 4 may be configured to move relative to each other in a direction perpendicular to the line-shaped laser light 51 at different speeds. Thereby, the LED chips 2 held on the first B transfer substrate 213 can be transferred to the second transfer substrate 4 at different pitches.
  • the first B transfer substrate 213 is arranged on the upper side and the second transfer substrate 4 is arranged on the lower side.
  • the present invention is not necessarily limited to this, and can be changed as appropriate for the convenience of arrangement. It is.
  • the first B transfer substrate 213 is disposed on the lower side as it is in the first B transfer step
  • the second transfer substrate 4 is disposed on the upper side
  • the lower first B transfer substrate 213 is directed toward the upper second transfer substrate 4.
  • the LED chip 2 may be energized and transferred.
  • the second transfer process may be performed in a state where the first B transfer substrate 213 and the second transfer substrate 4 are opposed to each other with a gap and are set up along the Z direction.
  • a second transfer substrate rotating step is performed in which the second transfer substrate 4 is rotated by 90 ° about the normal line as an axis, and the LED chip holding side is disposed on the upper side.
  • rotating the second transfer substrate 4 by 90 ° about the normal line as an axis means that the direction of the second transfer substrate 4 is rotated by 90 ° with respect to the longitudinal direction of the line-shaped laser beam.
  • the second transfer substrate rotation step may be executed in a vacuum environment or may not be in a vacuum environment. By executing the second transfer substrate rotating step, the second transfer substrate 4 that has been arranged horizontally in the X direction is rotated 90 ° and is arranged vertically as shown in FIG.
  • a third transfer substrate placement step is executed. That is, the third transfer substrate 206 is disposed so as to face the first surface of the LED chip 2 holding the second surface on the second transfer substrate 4 with a gap.
  • the second transfer substrate 4 is disposed on the upper side and the third transfer substrate 206 is disposed on the lower side so that the held LED chip 2 faces downward (see FIG. 20).
  • This third transfer substrate placement step may also be performed in a vacuum environment, but not necessarily in a vacuum environment.
  • the third transfer process is performed in a vacuum environment. That is, the second transfer substrate 4 is moved in the X direction at a third speed, and the third transfer substrate 206 is moved in the X direction at a fourth speed that is faster than the third speed. Further, the moving second transfer substrate 4 is irradiated with laser light 51 in a line along the Y direction to decompose the transfer layer, and the plurality of LED chips 2 are separated from the second transfer substrate 4 for each line in the Y direction. Then, it is biased toward the third transfer substrate 206. Then, the first surface side of the LED chip 2 is transferred to the third transfer substrate 206. At this time, the bump on the second surface of the LED chip 2 faces the outer side opposite to the third transfer substrate 206 side.
  • the second transfer substrate 4 is moved in the X direction at a third speed
  • the circuit board 5 is moved in the X direction at a fourth speed higher than the third speed.
  • the laser light 51 is irradiated in a line in the Y direction of the transfer substrate 4 to separate and energize the plurality of LED chips 2 for each line, thereby rotating the second transfer substrate rotated step by 90 °.
  • the LED chips 2 arranged on the transfer substrate 4 in the X direction at the second pitch and in the Y direction at the third pitch are arranged on the third transfer substrate 206 in the X direction and at the fourth pitch wider than the second pitch. It is possible to transfer images arranged in the Y direction at a pitch of 3.
  • the third pitch and the fourth pitch can be the pitch of the LED chips on the circuit board constituting the display.
  • Example 5 the second transfer substrate rotating step is executed, and the third transfer step is executed with the second transfer substrate 4 arranged in a vertically long position and the third transfer substrate 206 arranged in a horizontally long shape as shown in FIG.
  • the present invention is not necessarily limited to this, and can be appropriately changed depending on the convenience of the apparatus.
  • the second transfer substrate rotating step is not executed, the longitudinal direction of the line-shaped laser light is rotated by 90 ° while the second transfer substrate 4 is kept in the horizontally long arrangement, and the third transfer substrate 206 is arranged in the vertically long arrangement.
  • the third transfer process is performed in a vacuum environment as described above.
  • a vacuum environment By performing the third transfer process in a vacuum environment, it is possible to prevent the LED chip 2 separated and energized from the second transfer substrate 4 from receiving the air resistance and being displaced and transferred to the third transfer substrate 206. . Further, in order to further prevent the displacement, it is desirable that the gap between the second transfer substrate 4 and the third transfer substrate 206 be as narrow as possible.
  • a slight clearance is provided at the height of the LED chip 2. Is set to the distance added.
  • a transfer layer (not shown) is provided on the surface of the third transfer substrate 206.
  • the LED chip 2 separated from the second transfer substrate 4 is transferred to a transfer layer provided on the surface of the third transfer substrate 206 by an urging force.
  • the transfer layer is sticky at room temperature, has a property of being solidified by heat or ultraviolet light, and being decomposed by irradiation with laser light to generate gas. That is, the transfer layer of the second transfer substrate 4 is decomposed by the laser beam to generate gas and generate a biasing force, and the LED chip 2 is biased toward the transfer layer of the third transfer substrate 206 having adhesiveness.
  • the transfer layer of the third transfer substrate 206 is solidified and held by the heat of the LED chip 2. If the heat of the LED chip 2 is low, the transfer layer may be heated after the LED chip 2 has landed.
  • a second surface side of the LED chip 2 having the first surface side held by the third transfer substrate 206 is bonded to the circuit substrate 205 by performing a thermocompression bonding process. That is, as shown in FIG. 21, the circuit board 205 is positioned and fixed to the transfer substrate holding portion 55, and the first surface side is held by the third transfer board 206 so as to face the electrodes of the circuit board 205. The bumps on the second surface side of the LED chip 2 are positioned and overlapped. Then, the third transfer substrate 206, the LED chip 2, and the circuit substrate 205 are pressed while being heated from the opposite side of the third transfer substrate 206 to the LED chip 2 holding side by the thermocompression bonding head 262, and the transferred substrate holding portion 55 is pressed. Heat.
  • the heating temperature of the thermocompression bonding head 262 and the transferred substrate holding portion 55 is controlled so as to be the same temperature so as not to cause a shift in the mounting position due to the effects of thermal expansion and contraction.
  • This temperature is preferably about 150 ° C.
  • the bumps on the second surface of the LED chip 2 face the circuit board 205 side, and as a result, are joined to the electrodes of the circuit board 205.
  • a third transfer substrate removal step is executed to remove the third transfer substrate 206 from the LED chip 2 and complete the mounting. That is, as shown in FIG. 22, the third transfer substrate 206 is irradiated with a laser beam 51 made of an excimer laser in a line shape, and any one of the third transfer substrate 206 and the circuit substrate 205 or the line-shaped laser beam 51 is irradiated. The entire third transfer substrate 206 is irradiated with laser light by being relatively moved in the X direction. Then, the third transfer substrate 206 is removed while reducing the adhesive strength of the transfer layer. In this removal, the third transfer substrate 206 can be adsorbed and removed by the thermocompression bonding head 262. The bumps on the second surface of the LED chip 2 are securely bonded to the circuit board 205, and the mounting is completed.
  • the LED chip 2 can be mounted on the circuit board 205 at an arbitrary pitch.
  • the LED chip 2 is bonded to the circuit board 205 in the thermocompression bonding process, and then the third transfer substrate 206 holding the LED chip 2 is removed, thereby shifting the position of the LED chip 2. Can be prevented and high-precision mounting can be realized.
  • the third transfer substrate 206 is irradiated with the laser beam 51 to reduce the adhesive force of the transfer layer and the third transfer substrate 206 is removed.
  • the present invention is not limited to this. Changes can be made as appropriate.
  • a layer whose adhesive strength is reduced by heating is adopted as the transfer layer of the third transfer substrate 206.
  • the thermocompression bonding head 262 heats the third transfer substrate 206 in the thermocompression bonding process, the third transfer substrate is transferred by this heating.
  • the adhesive force of the transfer layer of the substrate 206 may be reduced, and the third transfer substrate 206 may be simply adsorbed and removed by the thermocompression bonding head 262 in the third transfer substrate removal step. In this case, the third transfer substrate 206 is not heated until the thermocompression bonding step.
  • the circuit board 205 is formed with the fourth pitch wider than the second pitch in the X direction and the first pitch.
  • the LED chips 2 are arranged in the Y direction at a wide third pitch.
  • the circuit board 205 or the second transfer board 4 is shifted in the Y direction by a distance corresponding to the first pitch, that is, at least the length of the LED chip 2 in the Y direction, and the third transfer process, the thermocompression bonding process, and the third transfer.
  • the second types of LED chips 2 can be arranged in a line in the Y direction.
  • the third transfer step, the thermocompression bonding step, and the third transfer substrate removal step are performed so that a new LED chip is disposed between the LED chips in the longitudinal direction of the line-shaped laser light that has already been transferred to the circuit board 205.
  • the second kind of LED chips 2 can be arranged in a line in the Y direction.
  • the third types of LED chips 2 can be arranged in one line in the Y direction.
  • the first LED chip 2 is a red LED chip 2 (R)
  • the second LED chip 2 is a green LED chip 2 (G)
  • the third LED chip 2 is a blue LED chip. If 2 (B), the red, green and blue LED chips 2 can be arranged without gaps.
  • the mounting apparatus 250 has the same configuration as that of the mounting apparatus 150 described with reference to FIG. 9, but in order to perform the above-described thermocompression bonding process and third transfer substrate removal process.
  • the transfer substrate holding part 55 is different from the mounting apparatus 150 in that it has a heating mechanism and a thermocompression bonding head 262 (see FIG. 21) that can pressurize and heat the LED chip. Yes.
  • each process from the first A transfer process to the third transfer substrate removal process can be executed by one mounting apparatus 250.
  • the control unit controls the temperature of the thermocompression bonding head 262 and the temperature of the transfer substrate holding unit 55 to the same heating temperature, and the third transfer substrate 206 is held.
  • the LED chip 2 and the circuit board 205 are pressed.
  • the heating temperature is preferably about 150 ° C.
  • the third transfer substrate removal step the entire surface of the third transfer substrate 206 is irradiated with laser light 51 to reduce the adhesive force of the transfer layer, and then the thermocompression bonding head 262 adsorbs the third transfer substrate 206. Separated from the LED chip 2 and removed.
  • Example 5 although it was set as the structure which performs each process with the one mounting apparatus 150, it is not necessarily limited to this, It can change suitably for convenience.
  • three mounting apparatuses 250 are arranged side by side so that each mounting apparatus 250 performs the first A transfer process, the first B transfer process, the second transfer process, the third transfer process, and the thermal transfer process / third transfer substrate removal process. It may be configured. In this case, between each mounting apparatus 250, what is necessary is just to set it as the structure which arrange
  • Example 5 the mounting method of mounting the LED chip after dicing with the first surface held by the carrier substrate on the circuit board, A first A transfer step of separating the LED chip from the carrier substrate and transferring and holding a second surface side opposite to the first surface of the LED chip on a first A transfer substrate; A first B transfer step of separating the LED chip from the first A transfer substrate and transferring and holding the first surface side of the LED chip on the first B transfer substrate; A second transfer substrate disposing step of disposing a second transfer substrate so as to face the second surface of the LED chip holding the first surface on the first B transfer substrate with a gap; The first B transfer substrate is irradiated with a line-shaped laser beam to separate a plurality of LED chips for one line from the first B transfer substrate and urge toward the second transfer substrate, and the first B transfer The second surface of the LED chip is transferred to the second transfer substrate by moving the substrate and the second transfer substrate at different speeds in a direction perpendicular to the line-shaped laser beam.
  • a second transfer step A second transfer substrate rotating step of disposing the second transfer substrate by rotating the second transfer substrate by 90 ° about the normal line with respect to the line-shaped laser beam;
  • a third transfer substrate disposing step of disposing a third transfer substrate so as to face the first surface of the LED chip holding the second surface on the second transfer substrate with a gap;
  • the second transfer substrate is irradiated with a line-shaped laser beam to separate the plurality of LED chips for one line from the second transfer substrate and urge toward the third transfer substrate, and the second transfer
  • the first surface side of the LED chip is transferred to the third transfer substrate by moving the substrate and the third transfer substrate at different speeds relative to each other in the direction perpendicular to the line-shaped laser beam.
  • a third transfer step A thermocompression bonding step in which the bumps on the second surface of the LED chip holding the first surface on the third transfer substrate are thermocompression bonded to the electrodes of the circuit substrate;
  • At least the second transfer step and the third transfer step are performed in a vacuum environment, and the effect of air resistance during transfer is eliminated and the LED chip is transferred and mounted with high accuracy. be able to. Further, by performing the thermocompression bonding process, the LED chip can be reliably bonded to the circuit board, and high-precision mounting can be realized.
  • the circuit board held by the transferred substrate holding part includes a thermocompression bonding head for thermocompression bonding the LED chip, and the transferred substrate holding part holds the transferred substrate or A heating mechanism for heating the circuit board;
  • the mounting unit is configured to control the LED chip to be thermocompression bonded to the circuit board by heating the thermocompression bonding head and the transfer substrate holding part to the same temperature.
  • the transfer method, mounting method, transfer device, and mounting device in the present invention can be widely used in the field of transferring and mounting LED chips with high accuracy by eliminating the influence of air resistance during transfer.

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Abstract

Provided are a transfer method, a mounting method, a transfer device, and a mounting device, wherein the effects of air resistance during transfer can be eliminated and LED chips can be transferred and mounted with high precision. Specifically, provided is a transfer method in which an LED chip, one surface of which is held on a transfer-origin substrate, is transferred onto a transfer-destination substrate, the transfer method being characterized by comprising a transfer-destination substrate arrangement step for arranging the transfer-destination substrate so as to face, across a gap, the surface of the LED chip on the reverse side of the one surface of the LED chip, and a transfer step for irradiating the transfer-origin substrate with laser light to separate the LED chip from the transfer-origin substrate, and bias the LED chip towards the transfer-destination substrate for transfer to the transfer-destination substrate, wherein at least the transferring step is carried out in a vacuum.

Description

転写方法、実装方法、転写装置、及び実装装置TRANSFER METHOD, MOUNTING METHOD, TRANSFER DEVICE, AND MOUNTING DEVICE
本発明は、LEDチップを高精度に転写、実装する転写方法、実装方法、転写装置、及び実装装置に関するものである。 The present invention relates to a transfer method, a mounting method, a transfer device, and a mounting device for transferring and mounting an LED chip with high accuracy.
 LEDチップは、コスト低減のために小型化し、小型化したLEDチップを高速・高精度に実装するための取組みが行われている。特に、ディスプレイに用いられるLEDはマイクロLEDと呼ばれる50μm×50μm以下のLEDチップを数μmの精度で高速に実装することが求められている。 The LED chip has been downsized to reduce cost, and efforts are being made to mount the downsized LED chip with high speed and high accuracy. In particular, an LED used for a display is required to be mounted at high speed with an accuracy of several μm, which is an LED chip of 50 μm × 50 μm or less called a micro LED.
特許文献1には、ウェハに格子状に形成されたLEDチップに帯状のレーザ光を照射して1ラインまたは複数ラインごとに一括して転写基板200に転写したのち、転写基板200に転写された後の複数のLEDチップに帯状のレーザ光を照射して1ラインまたは複数ラインごとに転写基板300に一括して転写する構成が記載されている。 In Patent Document 1, an LED chip formed in a lattice shape on a wafer is irradiated with a belt-shaped laser beam, transferred to a transfer substrate 200 in batches for each line or a plurality of lines, and then transferred to the transfer substrate 200. A configuration is described in which a plurality of later LED chips are irradiated with a band-shaped laser beam and transferred onto a transfer substrate 300 in a lump for each line or a plurality of lines.
特許文献1:特開2010-161221号公報 Patent Document 1: Japanese Patent Application Laid-Open No. 2010-161221
しかしながら、特許文献1記載のものは、LEDチップを各転写基板に転写するときに、LEDチップが空気抵抗の影響を受けて位置ずれする可能性があるという問題があった。 However, the device described in Patent Document 1 has a problem that when the LED chip is transferred to each transfer substrate, the LED chip may be displaced due to the influence of air resistance.
本発明は、上記問題点を解決して、転写時の空気抵抗の影響を排除して、高精度にLEDチップを転写、実装することを課題とする。 An object of the present invention is to solve the above-mentioned problems, eliminate the influence of air resistance during transfer, and transfer and mount an LED chip with high accuracy.
上記課題を解決するために本発明は、転写基板に一方の面を保持されたLEDチップを被転写基板に転写する転写方法であって、
前記LEDチップの前記一方の面の反対側の面に隙間を有して対向するように前記被転写基板を配置する被転写基板配置工程と、
前記転写基板にレーザ光を照射することにより、前記LEDチップを前記転写基板から分離するとともに前記被転写基板に向かって付勢させて前記被転写基板に転写する転写工程と、を備え、
少なくとも前記転写工程を真空環境で実行することを特徴とする転写方法を提供するものである。
In order to solve the above-mentioned problem, the present invention is a transfer method for transferring an LED chip having one surface held by a transfer substrate to a transfer substrate,
A transferred substrate placement step of placing the transferred substrate so as to face the surface opposite to the one surface of the LED chip with a gap;
A transfer step of separating the LED chip from the transfer substrate by irradiating the transfer substrate with a laser beam and urging the LED chip toward the transfer substrate to transfer the LED chip to the transfer substrate;
The present invention provides a transfer method characterized in that at least the transfer step is performed in a vacuum environment.
この構成により、転写工程を真空環境で実行することで、転写時の空気抵抗の影響を排除して、高精度にLEDチップを転写することができる。 With this configuration, by executing the transfer process in a vacuum environment, it is possible to transfer the LED chip with high accuracy by eliminating the influence of air resistance during transfer.
また、上記課題を解決するために本発明は、キャリア基板に第1の面を保持されたダイシング後のLEDチップを回路基板に実装する実装方法であって、前記キャリア基板から前記LEDチップを分離して第1転写基板に前記LEDチップの前記第1の面と反対側の第2の面側を転写して保持させる第1転写工程と、前記第1転写基板に前記第2の面を保持された前記LEDチップの前記第1の面と隙間を有して対向するように第2転写基板を配置する第2転写基板配置工程と、前記第1転写基板にライン状のレーザ光を照射して1ライン分の複数の前記LEDチップを前記第1転写基板から分離し前記第2転写基板に向かって付勢させるとともに、前記第1転写基板と前記第2転写基板とを互いに異なる速度で、前記ライン状のレーザ光に対してその直交する方向に相対移動させて、前記LEDチップの第1の面側を前記第2転写基板に転写する第2転写工程と、前記ライン状のレーザ光に対して、前記第2転写基板をその法線を軸として90°回転させて前記第2転写基板を配置する第2転写基板回転工程と、前記第2転写基板に前記第1の面を保持された前記LEDチップの前記第2の面と隙間を有して対向するように前記回路基板を配置する回路基板配置工程と、前記第2転写基板にライン状のレーザ光を照射して1ライン分の複数の前記LEDチップを前記第2転写基板から分離し前記回路基板に向かって付勢させるとともに、前記第2転写基板と前記回路基板とを互いに異なる速度で、前記ライン状のレーザ光に対してその直交する方向に相対移動させて、前記LEDチップの第2の面側を前記回路基板に転写することにより前記LEDチップのバンプと前記回路基板の電極とを接合させる第1実装工程と、を備え、少なくとも前記第2転写工程、及び前記第1実装工程を真空環境で実行することを特徴とする実装方法を提供するものである。 In order to solve the above problems, the present invention provides a mounting method for mounting a dicing LED chip having a first surface held by a carrier board on a circuit board, and separating the LED chip from the carrier board. Then, a first transfer step of transferring and holding the second surface side opposite to the first surface of the LED chip on the first transfer substrate, and holding the second surface on the first transfer substrate A second transfer substrate disposing step of disposing a second transfer substrate so as to face the first surface of the LED chip with a gap, and irradiating the first transfer substrate with a line-shaped laser beam. A plurality of LED chips for one line are separated from the first transfer substrate and urged toward the second transfer substrate, and the first transfer substrate and the second transfer substrate are moved at different speeds, To the line-shaped laser beam The second transfer step of transferring the first surface side of the LED chip to the second transfer substrate by relatively moving in the orthogonal direction, and the second transfer with respect to the line-shaped laser light A second transfer substrate rotating step of disposing the second transfer substrate by rotating the substrate by 90 ° about the normal line; and the first of the LED chips holding the first surface on the second transfer substrate. A circuit board arranging step of arranging the circuit board so as to be opposed to the surface of 2 with a gap, and irradiating the second transfer substrate with a line-shaped laser beam to form a plurality of LED chips for one line The second transfer substrate is separated from the second transfer substrate and urged toward the circuit substrate, and the second transfer substrate and the circuit substrate are relatively different from each other in a direction perpendicular to the line-shaped laser beam at different speeds. Move the LED A first mounting step of bonding a bump of the LED chip and an electrode of the circuit board by transferring the second surface side of the chip onto the circuit board, and at least the second transfer step, and The present invention provides a mounting method characterized in that the first mounting step is performed in a vacuum environment.
この構成により、第2転写工程及び第1実装工程を真空環境で実行することで、転写時の空気抵抗の影響を排除して高精度にLEDチップを転写できるとともに、キャリア基板に配列されていたLEDチップのピッチと異なる任意のピッチで、回路基板に高速に転写し、実装することができる。 With this configuration, the second transfer step and the first mounting step are performed in a vacuum environment, so that the influence of air resistance during transfer can be eliminated and the LED chip can be transferred with high accuracy, and the LED chip is arranged on the carrier substrate. It can be transferred to a circuit board at high speed and mounted at an arbitrary pitch different from the pitch of the LED chip.
前記第1実装工程において前記回路基板に既に転写済の前記ライン状のレーザ光の長手方向におけるLEDチップ間に新たなLEDチップを配置するように、前記第1実装工程を再度実行する構成としてもよい。 In the first mounting step, the first mounting step may be performed again such that a new LED chip is disposed between the LED chips in the longitudinal direction of the line-shaped laser light that has already been transferred to the circuit board. Good.
この構成により、複数種類のLEDチップをライン状に実装することができ、また、第2転写基板と回路基板との隙間を小さくすることができる。 With this configuration, a plurality of types of LED chips can be mounted in a line, and the gap between the second transfer substrate and the circuit board can be reduced.
また、上記課題を解決するために本発明は、キャリア基板に第1の面を保持されたダイシング後のLEDチップを回路基板に実装する実装方法であって、前記キャリア基板から前記LEDチップを分離して第1A転写基板に前記LEDチップの前記第1の面と反対側の第2の面側を転写して保持させる第1A転写工程と、前記第1A転写基板から前記LEDチップを分離して第1B転写基板に前記LEDチップの前記第1の面側を転写して保持させる第1B転写工程と、前記第1B転写基板に前記第1の面を保持された前記LEDチップの前記第2の面と隙間を有して対向するように第2転写基板を配置する第2転写基板配置工程と、前記第1B転写基板にライン状のレーザ光を照射して1ライン分の複数の前記LEDチップを前記第1B転写基板から分離し前記第2転写基板に向かって付勢させるとともに、前記第1B転写基板と前記第2転写基板とを互いに異なる速度で、前記ライン状のレーザ光に対してその直交する方向に相対移動させて、前記LEDチップの第2の面側を前記第2転写基板に転写する第2転写工程と、前記ライン状のレーザ光に対して、前記第2転写基板をその法線を軸として90°回転させて前記第2転写基板を配置する第2転写基板回転工程と、前記第2転写基板に前記第2の面を保持された前記LEDチップの前記第1の面と隙間を有して対向するように第3転写基板を配置する第3転写基板配置工程と、前記第2転写基板にライン状のレーザ光を照射して1ライン分の複数の前記LEDチップを前記第2転写基板から分離し前記第3転写基板に向かって付勢させるとともに、前記第2転写基板と前記第3転写基板とを互いに異なる速度で、前記ライン状のレーザ光に対してその直交する方向に相対移動させて、前記LEDチップの第1の面側を前記第3転写基板に転写する第3転写工程と、前記第3転写基板に前記第1の面を保持された前記LEDチップの第2の面におけるバンプを回路基板の電極に対向させて熱圧着する熱圧着工程と、前記LEDチップの前記第1の面を前記第3転写基板から分離して前記第3転写基板を撤去する第3転写基板撤去工程と、を備え、少なくとも前記第2転写工程、及び前記第3転写工程を真空環境で実行することを特徴とする実装方法を提供するものである。 In order to solve the above problems, the present invention provides a mounting method for mounting a dicing LED chip having a first surface held by a carrier board on a circuit board, and separating the LED chip from the carrier board. A first A transfer step of transferring and holding the second surface side opposite to the first surface of the LED chip on the first A transfer substrate, and separating the LED chip from the first A transfer substrate; A first B transfer step of transferring and holding the first surface side of the LED chip on a first B transfer substrate, and the second of the LED chip holding the first surface on the first B transfer substrate. A second transfer substrate placement step of placing a second transfer substrate so as to face the surface with a gap, and a plurality of LED chips for one line by irradiating the first B transfer substrate with a line-shaped laser beam 1B Separated from the substrate and urged toward the second transfer substrate, the first B transfer substrate and the second transfer substrate are moved relative to each other in a direction perpendicular to the line-shaped laser beam at different speeds. A second transfer step of moving and transferring the second surface side of the LED chip to the second transfer substrate; and the second transfer substrate with respect to the line-shaped laser beam as a normal line A second transfer substrate rotation step of disposing the second transfer substrate by rotating 90 °; and a gap with the first surface of the LED chip holding the second surface on the second transfer substrate. A third transfer substrate disposing step for disposing the third transfer substrate so as to face each other, and irradiating the second transfer substrate with a line-shaped laser beam so that a plurality of LED chips for one line are disposed on the second transfer substrate. To the third transfer substrate And the second transfer substrate and the third transfer substrate are moved relative to each other in the direction perpendicular to the line-shaped laser light at different speeds to thereby form the first LED chip. A third transfer step of transferring the surface side of the LED chip to the third transfer substrate, and a bump on the second surface of the LED chip holding the first surface on the third transfer substrate facing the electrode of the circuit board And a thermocompression bonding step of thermocompression bonding, and a third transfer substrate removal step of separating the first surface of the LED chip from the third transfer substrate and removing the third transfer substrate. The mounting method is characterized in that the second transfer step and the third transfer step are performed in a vacuum environment.
この構成により、第2転写工程及び第3転写工程を真空環境で実行することで、転写時の空気抵抗の影響を排除して高精度にLEDチップを転写できる。また、熱圧着工程を実施することによりLEDチップを回路基板に確実に接合でき、高精度な実装を実現できる。 With this configuration, by executing the second transfer process and the third transfer process in a vacuum environment, it is possible to transfer the LED chip with high accuracy by eliminating the influence of air resistance during transfer. Further, by performing the thermocompression bonding process, the LED chip can be reliably bonded to the circuit board, and high-precision mounting can be realized.
また、上記課題を解決するために本発明は、転写基板に保持されたLEDチップを被転写基板に転写させる転写装置であって、前記転写装置内を真空環境にする真空化部と、前記転写基板にレーザ光を照射するレーザ光照射部と、前記転写基板を保持し、第1方向に移動可能な転写基板保持部と、前記転写基板に保持された前記LEDチップと隙間を有して対向するように前記被転写基板を保持し、少なくとも前記第1方向に移動可能な被転写基板保持部と、前記転写基板から前記LEDチップを分離し前記被転写基板に向かって付勢して転写するように前記レーザ光照射部、前記転写基板保持部、及び前記被転写基板保持部を制御する制御部と、を備えたことを特徴とする転写装置を提供するものである。 In order to solve the above-mentioned problems, the present invention provides a transfer device for transferring an LED chip held on a transfer substrate to a transfer target substrate, wherein the transfer device makes a vacuum environment inside the transfer device, and the transfer Opposite the laser light irradiation unit for irradiating the substrate with laser light, the transfer substrate holding unit that holds the transfer substrate and is movable in the first direction, and the LED chip held on the transfer substrate with a gap. The transfer substrate is held so that the transfer substrate holding portion is movable at least in the first direction, and the LED chip is separated from the transfer substrate, and is urged and transferred toward the transfer substrate. Thus, the present invention provides a transfer apparatus comprising the laser beam irradiation unit, the transfer substrate holding unit, and a control unit that controls the transfer substrate holding unit.
この構成により、転写基板から被転写基板へのLEDチップの転写を真空環境で実行することで、転写時の空気抵抗の影響を排除して、高精度にLEDチップを転写することができる。 With this configuration, by transferring the LED chip from the transfer substrate to the transfer substrate in a vacuum environment, it is possible to transfer the LED chip with high accuracy by eliminating the influence of air resistance during transfer.
また、上記課題を解決するために本発明は、回路基板にLEDチップを実装する実装装置であって、前記実装装置内を真空環境にする真空化部と、前記LEDチップが配列された転写基板にライン状のレーザ光を照射するレーザ光照射部と、前記転写基板を保持し、第1方向に移動可能な転写基板保持部と、前記転写基板に保持された前記LEDチップと隙間を有して対向するように被転写基板又は前記回路基板を保持し、少なくとも前記第1方向に移動可能な被転写基板保持部と、前記レーザ光照射部、前記転写基板保持部、及び前記被転写基板保持部を制御する制御部と、を備え、前記制御部は、前記転写基板と前記被転写基板又は前記回路基板とを互いに異なる速度で、前記ライン状のレーザ光に対してその直交する方向に相対移動させて、前記ライン状のレーザ光に対応した1ライン分の複数の前記LEDチップを分離、付勢して前記被転写基板又は前記回路基板に転写するように制御することを特徴とする実装装置を提供するものである。 In order to solve the above-mentioned problems, the present invention provides a mounting apparatus for mounting an LED chip on a circuit board, wherein the mounting apparatus is evacuated to a vacuum environment, and the transfer board on which the LED chips are arranged. A laser beam irradiating unit that irradiates a line-shaped laser beam, a transfer substrate holding unit that holds the transfer substrate and is movable in a first direction, and a gap with the LED chip held on the transfer substrate. Holding the transfer substrate or the circuit board so as to oppose each other and moving at least in the first direction, the laser beam irradiation unit, the transfer substrate holding unit, and the transfer substrate holding A control unit that controls the transfer substrate and the transfer substrate and the transfer substrate or the circuit substrate at different speeds relative to each other in a direction orthogonal to the line-shaped laser beam. Moved A mounting apparatus for controlling the plurality of LED chips for one line corresponding to the line-shaped laser light to be separated and energized and transferred to the substrate to be transferred or the circuit board. It is to provide.
この構成により、転写基板から被転写基板へのLEDチップの転写を真空環境で実行することで、転写時の空気抵抗の影響を排除して、高精度にLEDチップを回路基板に転写することができるとともに、キャリア基板に配列されていたLEDチップのピッチと異なる任意のピッチで、回路基板に高速に転写し、実装することができる。 With this configuration, by transferring the LED chip from the transfer substrate to the transfer substrate in a vacuum environment, it is possible to eliminate the influence of air resistance during transfer and transfer the LED chip to the circuit substrate with high accuracy. At the same time, it can be transferred and mounted on the circuit board at a high speed with an arbitrary pitch different from the pitch of the LED chips arranged on the carrier board.
前記被転写基板保持部に保持された前記回路基板に前記LEDチップを熱圧着する熱圧着ヘッドを備えるとともに、前記被転写基板保持部は保持した前記被転写基板又は前記回路基板を加熱する加熱機構を備え、前記制御部は、前記熱圧着ヘッドと前記被転写基板保持部とを同じ温度になるように加熱して前記LEDチップを前記回路基板に熱圧着するように制御する構成としてもよい。 A heating mechanism that includes a thermocompression bonding head for thermocompression bonding the LED chip to the circuit substrate held by the transfer substrate holding unit, and that heats the transfer substrate or circuit substrate held by the transfer substrate holding unit. The control unit may be configured to control the LED chip to be thermocompression bonded to the circuit board by heating the thermocompression bonding head and the transfer substrate holding unit to the same temperature.
この構成により、熱圧着工程を実施することによりLEDチップを回路基板に確実に接合でき、高精度な実装を実現できる。 With this configuration, by performing the thermocompression bonding step, the LED chip can be reliably bonded to the circuit board, and high-precision mounting can be realized.
本発明の転写方法、実装方法、転写装置、及び実装装置により、転写時の空気抵抗の影響を排除して、高精度にLEDチップを転写、実装することができる。 With the transfer method, the mounting method, the transfer device, and the mounting device of the present invention, it is possible to transfer and mount the LED chip with high accuracy by eliminating the influence of air resistance during transfer.
本発明の実施例1における転写方法を説明する図である。It is a figure explaining the transfer method in Example 1 of this invention. 本発明の実施例1における転写装置を説明する図である。It is a figure explaining the transfer apparatus in Example 1 of this invention. 本発明の実施例2における実装方法の第1転写工程を説明する図である。It is a figure explaining the 1st transcription | transfer process of the mounting method in Example 2 of this invention. 本発明の実施例2における実装方法の第2転写工程を説明する図である。It is a figure explaining the 2nd transcription | transfer process of the mounting method in Example 2 of this invention. 本発明の実施例2における実装方法の第1実装工程の始まりを説明する図である。It is a figure explaining the beginning of the 1st mounting process of the mounting method in Example 2 of the present invention. 本発明の実施例2における実装方法の第1実装工程の途中を説明する図である。It is a figure explaining the middle of the 1st mounting process of the mounting method in Example 2 of the present invention. 本発明の実施例2における実装方法の第1実装工程の最後を説明する図である。It is a figure explaining the last of the 1st mounting process of the mounting method in Example 2 of the present invention. 本発明の実施例2における実装方法によるRGB3色の実装を説明する図である。It is a figure explaining mounting of RGB 3 colors by the mounting method in Example 2 of the present invention. 本発明の実施例2における実装装置を説明する図である。It is a figure explaining the mounting apparatus in Example 2 of this invention. 本発明の実施例3における実装方法の第1転写工程を説明する図である。It is a figure explaining the 1st transcription | transfer process of the mounting method in Example 3 of this invention. 本発明の実施例4における実装方法の第3転写工程の始まりを説明する図である。It is a figure explaining the start of the 3rd transcription | transfer process of the mounting method in Example 4 of this invention. 本発明の実施例4における実装方法の第3転写工程の途中を説明する図である。It is a figure explaining the middle of the 3rd transcription | transfer process of the mounting method in Example 4 of this invention. 本発明の実施例4おける実装方法の第3転写工程の最後を説明する図である。It is a figure explaining the last of the 3rd transcription | transfer process of the mounting method in Example 4 of this invention. 本発明の実施例4における実装方法によるリペアを説明する図である。It is a figure explaining the repair by the mounting method in Example 4 of this invention. 本発明の実施例4における実装方法の第4転写工程及び第2実装工程を説明する図である。It is a figure explaining the 4th transcription | transfer process and 2nd mounting process of the mounting method in Example 4 of this invention. 本発明の実施例4における実装方法のリペア時のLEDチップ転写を説明する図である。It is a figure explaining LED chip transcription | transfer at the time of repair of the mounting method in Example 4 of this invention. 本発明の実施例5における実装方法の第1A転写工程を説明する図である。It is a figure explaining the 1A transfer process of the mounting method in Example 5 of this invention. 本発明の実施例5における実装方法の第1B転写工程を説明する図である。It is a figure explaining the 1B transfer process of the mounting method in Example 5 of this invention. 本発明の実施例5における実装方法の第2転写工程を説明する図である。It is a figure explaining the 2nd transcription | transfer process of the mounting method in Example 5 of this invention. 本発明の実施例5における実装方法の第3転写工程を説明する図である。It is a figure explaining the 3rd transcription | transfer process of the mounting method in Example 5 of this invention. 本発明の実施例5における実装方法の熱圧着工程を説明する図である。It is a figure explaining the thermocompression bonding process of the mounting method in Example 5 of this invention. 本発明の実施例5における実装方法の第3転写基板撤去工程を説明する図である。It is a figure explaining the 3rd transcription | transfer board | substrate removal process of the mounting method in Example 5 of this invention.
本発明の実施例1について、図1、図2を参照して説明する。図1は、本発明の実施例1における転写方法を説明する図である。図2は、本発明の実施例1における転写装置を説明する図である。 A first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a diagram for explaining a transfer method in Embodiment 1 of the present invention. FIG. 2 is a diagram illustrating the transfer device according to the first embodiment of the present invention.
(転写方法) LEDチップ2は、図1(a)に示すように、第1の面側がサファイヤからなるキャリア基板1から成長させて形成されており、第1の面と反対側の面である第2の面が外部に露出しバンプが形成されている。また、キャリア基板1は円形又は四角形を有しており、サファイヤ以外にガリウムヒ素からなるものもある。また、LEDチップ2はダイシングされてキャリア基板1に複数個(数百個~数万個)が2次元に配列されている。マイクロLEDと呼ばれる小型のLEDチップ2では、50μm×50μm以下のサイズであり、このサイズにダイシング幅を加えたピッチで配列されている。このような小型のLEDチップ2は、高精度(例えば、1μm以下の精度)に回路基板に実装することが求められている。実施例1におけるLEDチップ2は、事前に各LEDチップ2を検査し不良のLEDチップを除去している。具体的には、後述のレーザリフトオフの場合よりも強いレーザ光を照射し、不良チップを焼失させている。 (Transfer Method) As shown in FIG. 1A, the LED chip 2 is formed by growing the first surface from the carrier substrate 1 made of sapphire, and is the surface opposite to the first surface. The second surface is exposed to the outside and bumps are formed. Further, the carrier substrate 1 has a circular shape or a rectangular shape, and there is a substrate made of gallium arsenide other than sapphire. The LED chips 2 are diced, and a plurality (hundreds to tens of thousands) of LED chips 2 are two-dimensionally arranged on the carrier substrate 1. A small LED chip 2 called a micro LED has a size of 50 μm × 50 μm or less, and is arranged at a pitch obtained by adding a dicing width to this size. Such a small LED chip 2 is required to be mounted on a circuit board with high accuracy (for example, accuracy of 1 μm or less). The LED chip 2 in Example 1 inspects each LED chip 2 in advance and removes defective LED chips. Specifically, a laser beam stronger than that in the case of laser lift-off described later is irradiated to burn down defective chips.
実施例1における転写方法では、転写基板であるキャリア基板1からLEDチップ2を1個ずつ分離して直接被転写基板である回路基板5にLEDチップ2の第2の面側を転写する。つまり、サファイヤからなるキャリア基板1にエキシマレーザからなるスポット状のレーザ光51を照射し、キャリア基板1から1個のLEDチップ2を分離する。これは、LEDチップ2の第1の面側にあるキャリア基板1におけるGaN層の一部をGaとNに分解させて、LEDチップ2を分離するもので、分解の際にN(窒素)が発生することから、回路基板5に向かって付勢する(勢いをつける)ことができる。この手法はレーザリフトオフと呼ばれ、分離、付勢されたLEDチップ2は回路基板5に転写される。 In the transfer method according to the first embodiment, the LED chips 2 are separated one by one from the carrier substrate 1 which is a transfer substrate, and the second surface side of the LED chip 2 is directly transferred to the circuit substrate 5 which is a transfer target substrate. That is, the carrier substrate 1 made of sapphire is irradiated with a spot-like laser beam 51 made of an excimer laser, and one LED chip 2 is separated from the carrier substrate 1. This is to decompose a part of the GaN layer in the carrier substrate 1 on the first surface side of the LED chip 2 into Ga and N to separate the LED chip 2, and N (nitrogen) is decomposed during the decomposition. Since it occurs, it can be urged toward the circuit board 5. This technique is called laser lift-off, and the separated and energized LED chip 2 is transferred to the circuit board 5.
実施例1においては、図1(a)に示すように、LEDチップ2と回路基板5との間に隙間を設けて対向配置してレーザ光51を照射しているが、必ずしもこの隙間は必要ではなく、LEDチップ2と回路基板5とが接した状態でレーザ光51を照射するように構成してもよい。この隙間を設けないことで、LEDチップ2が空気抵抗を受けながら落下して位置ずれが起きることを防止できる。また、この第1転写工程は、真空環境で実行してもよい。真空環境で実行することにより、上述の隙間を設けてもLEDチップ2が付勢されるときに空気抵抗を受けず位置ずれが防止される。 In the first embodiment, as shown in FIG. 1A, a gap is provided between the LED chip 2 and the circuit board 5 so as to be opposed to each other and the laser beam 51 is irradiated. Instead, the laser light 51 may be irradiated while the LED chip 2 and the circuit board 5 are in contact with each other. By not providing this gap, it is possible to prevent the LED chip 2 from falling and being displaced while receiving air resistance. The first transfer process may be performed in a vacuum environment. By executing in a vacuum environment, even if the above-described gap is provided, the LED chip 2 is not subjected to air resistance when the LED chip 2 is energized, thereby preventing displacement.
回路基板5の表面には、予め図示しない転写層が設けられており、転写されたLEDチップ2は、この転写層に保持されて、図1(b)に示すように回路基板5にLEDチップ2が保持された構成となる。ここで、転写層とは、常温では粘着性があり、熱又は紫外線により固化し、レーザ光を照射することにより分解されてガスを発生する特性を有するものである。つまり、粘着性を有した回路基板5の転写層に向かってLEDチップ2が付勢され、着弾した後、LEDチップ2のもつ熱によって回路基板5の転写層が固化されてLEDチップ2が保持される。LEDチップ2のもつ熱が低ければ、LEDチップ2が着弾した後転写層を加熱してもよい。この時点でLEDチップ2の第2の面におけるバンプは回路基板5の電極と接している。さらに、このLEDチップ2を加圧、加熱してLEDチップ2のバンプと回路基板5の電極とを確実に接合するようにして実装してもよい。 A transfer layer (not shown) is provided on the surface of the circuit board 5 in advance, and the transferred LED chip 2 is held on the transfer layer, and the LED chip is mounted on the circuit board 5 as shown in FIG. 2 is held. Here, the transfer layer is sticky at room temperature, has a property of being solidified by heat or ultraviolet light, and being decomposed by irradiation with laser light to generate gas. That is, the LED chip 2 is urged toward the transfer layer of the circuit board 5 having adhesiveness, and after landing, the transfer layer of the circuit board 5 is solidified by the heat of the LED chip 2 and the LED chip 2 is held. Is done. If the heat of the LED chip 2 is low, the transfer layer may be heated after the LED chip 2 has landed. At this time, the bump on the second surface of the LED chip 2 is in contact with the electrode of the circuit board 5. Further, the LED chip 2 may be mounted by pressurizing and heating to surely bond the bumps of the LED chip 2 and the electrodes of the circuit board 5.
 このように、実施例1における転写方法は、転写基板に保持されたLEDチップ2を1個ずつ被転写基板に転写することができる。このため、リペアをするとき等に特に有効である。 As described above, in the transfer method according to the first embodiment, the LED chips 2 held on the transfer substrate can be transferred to the transfer substrate one by one. Therefore, it is particularly effective when repairing.
 なお、実施例1では、キャリア基板から回路基板への転写を例に挙げたが、これに限らず、キャリア基板から後述の転写基板、転写基板から転写基板、および転写基板から回路基板へのLEDチップの転写においても適用可能である。また、レーザ光をライン状にすることにより後述の実施例2のように1ラインに並ぶ複数のLEDチップを一括して転写することが可能である。 In the first embodiment, the transfer from the carrier substrate to the circuit substrate is taken as an example. However, the present invention is not limited to this, and the LED from the carrier substrate to the transfer substrate described later, the transfer substrate to the transfer substrate, and the transfer substrate to the circuit substrate is described. The present invention can also be applied to chip transfer. Further, by forming the laser beam in a line shape, it is possible to transfer a plurality of LED chips arranged in one line at a time as in Example 2 described later.
(転写装置)
 次に、本発明の実施例1における転写装置について、図2を参照して説明する。図2は、本発明の実施例1における転写装置を説明する図である。
(Transfer device)
Next, a transfer apparatus according to the first embodiment of the present invention will be described with reference to FIG. FIG. 2 is a diagram illustrating the transfer device according to the first embodiment of the present invention.
 転写装置50は、図示しない真空化部を備え、全体を真空チャンバーとして真空環境にすることができる。また、転写装置50は、転写基板を保持しX方向に移動可能な転写基板保持部54、転写基板保持部54の下側にあって転写基板に隙間を有して対向するように被転写基板を保持し、X方向、Y方向、Z方向、及びθ方向に移動可能な被転写基板保持部55、転写基板にレーザ光51を照射するレーザ光照射部52、及び転写基板からLEDチップ2を分離し付勢させてLEDチップ2を被転写基板に転写するように、レーザ光照射部52、転写基板保持部54、及び被転写基板保持部55を制御する図示しない制御部を備えている。 The transfer device 50 includes a evacuation unit (not shown), and the whole can be made into a vacuum environment as a vacuum chamber. In addition, the transfer device 50 holds the transfer substrate and can move in the X direction. The transfer substrate holding unit 54 is located below the transfer substrate holding unit 54 and is opposed to the transfer substrate with a gap. The transfer target substrate holding portion 55 that can move in the X, Y, Z, and θ directions, the laser light irradiation portion 52 that irradiates the transfer substrate with the laser light 51, and the LED chip 2 from the transfer substrate. A control unit (not shown) that controls the laser beam irradiation unit 52, the transfer substrate holding unit 54, and the transfer substrate holding unit 55 is provided so as to transfer the LED chip 2 to the transfer substrate by separating and energizing the LED chip 2.
 レーザ光照射部52は、転写装置50に固定して設けられる。実施例1においては、1個のLEDチップ2に照射するようにスポット状のレーザ光51を照射する。また、レーザ光照射部52に近接した位置にカメラ53が設けられている。カメラ53は、転写基板又は被転写基板の位置を認識し、被転写基板保持部55をX、Y、又はθ方向に移動させてアライメントを行う。 The laser beam irradiation unit 52 is provided fixed to the transfer device 50. In the first embodiment, the spot-shaped laser beam 51 is irradiated so as to irradiate one LED chip 2. A camera 53 is provided at a position close to the laser beam irradiation unit 52. The camera 53 recognizes the position of the transfer substrate or the transfer substrate, and moves the transfer substrate holding part 55 in the X, Y, or θ direction to perform alignment.
 実施例1において、転写基板とはキャリア基板1を指し、被転写基板とは回路基板5を指す。つまり、キャリア基板1が転写基板保持部54に保持され、回路基板5が被転写基板保持部55に保持される。 In Example 1, the transfer substrate refers to the carrier substrate 1, and the transfer substrate refers to the circuit substrate 5. That is, the carrier substrate 1 is held by the transfer substrate holding unit 54, and the circuit board 5 is held by the transfer substrate holding unit 55.
 ここで、転写基板に保持されたLEDチップ2と被転写基板との間に隙間を有さずに転写を行う場合は、被転写基板保持部55をZ方向に移動させて、転写基板保持部54に保持されたキャリア基板1のLEDチップ2と、被転写基板保持部55に保持された回路基板5とを接触させる。 Here, in the case where transfer is performed without a gap between the LED chip 2 held on the transfer substrate and the transfer substrate, the transfer substrate holding portion 55 is moved in the Z direction to transfer the transfer substrate holding portion. The LED chip 2 of the carrier substrate 1 held by the 54 and the circuit board 5 held by the transferred substrate holding part 55 are brought into contact with each other.
 キャリア基板1に保持されたLEDチップ2と回路基板5との間に隙間を有して転写を実行する場合は、キャリア基板1を保持した転写基板保持部54がX方向に移動するか、又は回路基板5を保持した被転写基板保持部55が、X方向、Y方向、又はθ方向の少なくとも一方向に移動してアライメントすることが可能となり、所望の位置でレーザ光照射部52がスポット状のレーザ光51を照射して、LEDチップ2を分離し被転写基板保持部55に保持された回路基板5に向かって付勢することによって転写される。この場合は、転写装置50内を真空化部によって真空環境とすることにより、付勢されたLEDチップ2が空気抵抗の影響を受けず位置ずれを防止できる。 When performing transfer with a gap between the LED chip 2 held on the carrier substrate 1 and the circuit board 5, the transfer substrate holding part 54 holding the carrier substrate 1 moves in the X direction, or The transferred substrate holding part 55 holding the circuit board 5 can be moved and aligned in at least one of the X direction, the Y direction, or the θ direction, and the laser beam irradiation part 52 can be spot-shaped at a desired position. The laser light 51 is irradiated, the LED chip 2 is separated, and the LED chip 2 is transferred by being biased toward the circuit substrate 5 held by the transfer substrate holding portion 55. In this case, the biased LED chip 2 is not affected by the air resistance and can be prevented from being displaced by setting the inside of the transfer device 50 to a vacuum environment by the vacuuming unit.
 なお、実施例1においては、被転写基板保持部55がX方向、Y方向、Z方向、及びθ方向に移動可能に構成したが、必ずしもこれに限定されるものではなく、都合により適宜変更が可能である。例えば、回転アライメントが不要であれば、θ方向の移動は必要がなく、また、転写基板と被転写基板の間を変更する必要がなければZ方向の移動は必要がない。また、転写基板保持部54をY方向に移動可能としてもよい。 In the first embodiment, the transfer substrate holder 55 is configured to be movable in the X direction, the Y direction, the Z direction, and the θ direction. However, the present invention is not necessarily limited to this, and may be changed as appropriate for convenience. Is possible. For example, if rotational alignment is not necessary, there is no need to move in the θ direction, and there is no need to move in the Z direction unless there is a need to change between the transfer substrate and the transfer substrate. Further, the transfer substrate holding part 54 may be movable in the Y direction.
このように実施例1においては、転写基板に一方の面を保持されたLEDチップを被転写基板に転写する転写方法であって、
前記LEDチップの前記一方の面の反対側の面に隙間を有して対向するように前記被転写基板を配置する被転写基板配置工程と、
前記転写基板にレーザ光を照射することにより、前記LEDチップを前記転写基板から分離するとともに前記被転写基板に向かって付勢させて前記被転写基板に転写する転写工程と、を備え、
少なくとも前記転写工程を真空環境で実行することを特徴とする転写方法により、転写時の空気抵抗の影響を排除して、高精度にLEDチップを転写することができる。
As described above, in Example 1, a transfer method for transferring an LED chip having one surface held by a transfer substrate to a transfer substrate,
A transferred substrate placement step of placing the transferred substrate so as to face the surface opposite to the one surface of the LED chip with a gap;
A transfer step of separating the LED chip from the transfer substrate by irradiating the transfer substrate with a laser beam and urging the LED chip toward the transfer substrate to transfer the LED chip to the transfer substrate;
By the transfer method characterized in that at least the transfer step is performed in a vacuum environment, the influence of air resistance during transfer can be eliminated, and the LED chip can be transferred with high accuracy.
 また、写基板に保持されたLEDチップを被転写基板に転写させる転写装置であって、前記転写装置内を真空環境にする真空化部と、
前記転写基板にレーザ光を照射するレーザ光照射部と、
前記転写基板を保持し、第1方向に移動可能な転写基板保持部と、
前記転写基板に保持された前記LEDチップと隙間を有して対向するように前記被転写基板を保持し、少なくとも前記第1方向に移動可能な被転写基板保持部と、
前記転写基板から前記LEDチップを分離し前記被転写基板に向かって付勢して転写するように前記レーザ光照射部、前記転写基板保持部、及び前記被転写基板保持部を制御する制御部と、
を備えたことを特徴とする転写装置により、転写時の空気抵抗の影響を排除して、高精度にLEDチップを転写することができる。
Also, a transfer device for transferring the LED chip held on the transfer substrate to the transfer substrate, a vacuuming unit for making the inside of the transfer device a vacuum environment,
A laser beam irradiation unit for irradiating the transfer substrate with a laser beam;
A transfer substrate holding unit that holds the transfer substrate and is movable in a first direction;
A transfer substrate holding portion that holds the transfer substrate so as to face the LED chip held on the transfer substrate with a gap, and is movable at least in the first direction;
A control unit for controlling the laser beam irradiation unit, the transfer substrate holding unit, and the transferred substrate holding unit so as to separate the LED chip from the transfer substrate and urge and transfer the LED chip toward the transferred substrate; ,
The transfer device characterized in that the LED chip can be transferred with high accuracy by eliminating the influence of air resistance during transfer.
 実施例2は、キャリア基板に保持されたLEDチップ2を高速に回路基板に実装する点で、実施例1と異なっている。本発明の実施例2における実装方法について、図3~図9を参照して説明する。図3は、本発明の実施例2における実装方法の第1転写工程を説明する図である。図4は、本発明の実施例2における実装方法の第2転写工程を説明する図である。図5は、本発明の実施例2における実装方法の第1実装工程の始まりを説明する図である。図6は、本発明の実施例2における実装方法の第1実装工程の途中を説明する図である。図7は、本発明の実施例2における実装方法の第1実装工程の最後を説明する図である。図8は、本発明の実施例2における実装方法によるRGB3色の実装を説明する図である。図9は、本発明の実施例2における実装装置を説明する図である。 Example 2 is different from Example 1 in that the LED chip 2 held on the carrier substrate is mounted on the circuit board at high speed. A mounting method according to the second embodiment of the present invention will be described with reference to FIGS. FIG. 3 is a diagram illustrating the first transfer process of the mounting method according to the second embodiment of the present invention. FIG. 4 is a diagram illustrating the second transfer process of the mounting method according to the second embodiment of the present invention. FIG. 5 is a diagram illustrating the start of the first mounting step of the mounting method according to the second embodiment of the present invention. FIG. 6 is a diagram for explaining the middle of the first mounting step of the mounting method according to the second embodiment of the present invention. FIG. 7 is a diagram for explaining the end of the first mounting step of the mounting method according to the second embodiment of the present invention. FIG. 8 is a diagram illustrating the implementation of RGB three colors by the mounting method according to the second embodiment of the present invention. FIG. 9 is a diagram for explaining the mounting apparatus according to the second embodiment of the present invention.
(実装方法)
 まず、第1転写工程を実行して、キャリア基板1からLEDチップ2を分離して第1転写基板3にLEDチップ2の第2の面側を転写し保持させる。実施例2においては、キャリア基板1にライン状にエキシマレーザからなるレーザ光51を照射し、キャリア基板1又はライン状のレーザ光51のいずれかをX方向に相対移動させてキャリア基板1全体にレーザ光を照射する。そして、サファイヤからなるキャリア基板1におけるGaN層の一部をGaとNに分解させて、LEDチップ2を分離し第1転写基板3に向かって付勢させるものである。この手法はレーザリフトオフと呼ばれ、分離したLEDチップ2は、GaNが分解されるときにN(窒素)が発生することにより付勢され第1転写基板3に転写される。
(Mounting method)
First, the first transfer step is executed to separate the LED chip 2 from the carrier substrate 1 and transfer and hold the second surface side of the LED chip 2 on the first transfer substrate 3. In the second embodiment, the carrier substrate 1 is irradiated with a laser beam 51 made of an excimer laser in a line shape, and either the carrier substrate 1 or the line-shaped laser beam 51 is relatively moved in the X direction to move the entire carrier substrate 1. Irradiate with laser light. Then, a part of the GaN layer in the carrier substrate 1 made of sapphire is decomposed into Ga and N, and the LED chip 2 is separated and biased toward the first transfer substrate 3. This method is called laser lift-off, and the separated LED chip 2 is energized and transferred to the first transfer substrate 3 by generating N (nitrogen) when GaN is decomposed.
 図3(a)では、LEDチップ2と第1転写基板3との間に隙間を設けてレーザ光51を照射しているが、必ずしもこの隙間は必要ではなく、LEDチップ2と第1転写基板3とが接した状態でレーザ光51を照射するように構成してもよい。この隙間を設けないことで、LEDチップ2が空気抵抗を受けて付勢されたために位置ずれが起こることを防止することができる。また、この第1転写工程は、真空環境で実行してもよい。真空環境で実行することにより、上述の隙間を設けてもLEDチップ2が付勢されるときに空気抵抗を受けず位置ずれを防止できる。 In FIG. 3A, a gap is provided between the LED chip 2 and the first transfer substrate 3 to irradiate the laser beam 51. However, this gap is not necessarily required, and the LED chip 2 and the first transfer substrate are not necessarily required. 3 may be configured to irradiate the laser beam 51 in a state where it is in contact with 3. By not providing this gap, it is possible to prevent the LED chip 2 from being displaced due to being biased by receiving air resistance. The first transfer process may be performed in a vacuum environment. By performing the operation in a vacuum environment, even if the above-described gap is provided, it is possible to prevent positional deviation without receiving air resistance when the LED chip 2 is energized.
 第1転写基板3の表面には、予め図示しない転写層が設けられており、転写されたLEDチップ2は、この転写層により保持されて、図3(b)に示すように第1転写基板3にLEDチップ2が保持された構成となる。ここで、転写層とは、常温では粘着性があり、熱又は紫外線により固化し、レーザ光を照射することにより分解されてガスを発生する特性を有するものである。つまり、粘着性を有した第1転写基板3の転写層に向かってLEDチップ2が付勢され、着弾した後、LEDチップ2のもつ熱によって第1転写基板3の転写層が固化されてLEDチップ2が保持される。LEDチップ2のもつ熱が低ければ、LEDチップ2が着弾した後転写層を加熱してもよい。この時点でLEDチップ2の第2の面におけるバンプは第1転写基板3と接している。 A transfer layer (not shown) is provided in advance on the surface of the first transfer substrate 3, and the transferred LED chip 2 is held by this transfer layer, and the first transfer substrate as shown in FIG. The LED chip 2 is held on the 3. Here, the transfer layer is sticky at room temperature, has a property of being solidified by heat or ultraviolet light, and being decomposed by irradiation with laser light to generate gas. That is, after the LED chip 2 is urged toward the transfer layer of the first transfer substrate 3 having adhesiveness and landed, the transfer layer of the first transfer substrate 3 is solidified by the heat of the LED chip 2 and the LED Chip 2 is held. If the heat of the LED chip 2 is low, the transfer layer may be heated after the LED chip 2 has landed. At this time, the bump on the second surface of the LED chip 2 is in contact with the first transfer substrate 3.
 次に、第2転写基板配置工程を実行する。つまり、第1転写基板3に第2の面を保持されたLEDチップ2の第1の面と隙間を有して対向するように第2転写基板4を配置する。このとき実施例2においては、保持しているLEDチップ2を下に向けて第1転写基板3を上側に配置し、第2転写基板4を第1転写基板3の下側に配置する(図4参照)。第2転写基板配置工程は、真空環境で実行してもよいし、必ずしも真空環境でなくてもよい。 Next, a second transfer substrate placement step is executed. That is, the second transfer substrate 4 is disposed so as to face the first surface of the LED chip 2 holding the second surface on the first transfer substrate 3 with a gap. At this time, in Example 2, the first transfer substrate 3 is disposed on the upper side with the LED chip 2 being held facing down, and the second transfer substrate 4 is disposed on the lower side of the first transfer substrate 3 (see FIG. 4). The second transfer substrate placement step may be performed in a vacuum environment or may not necessarily be a vacuum environment.
続いて第2転写工程を真空環境で実行する。つまり、第1転写基板3をX方向に第1の速度で移動させ、また、第2転写基板4をX方向に第1の速度より速い第2の速度で移動させる。さらに移動中の第1転写基板3にレーザ光51をY方向に沿ってライン状に照射し転写層の粘着力を低減させて、第1転写基板3からY方向における1ライン毎に複数のLEDチップ2を分離する。この際、第1転写工程と同様に分離したLEDチップ2は第2転写基板4に向かって付勢され、LEDチップ2の第1の面側が転写される。 Subsequently, the second transfer process is performed in a vacuum environment. That is, the first transfer substrate 3 is moved in the X direction at a first speed, and the second transfer substrate 4 is moved in the X direction at a second speed that is faster than the first speed. Further, the moving first transfer substrate 3 is irradiated with laser light 51 in a line along the Y direction to reduce the adhesive force of the transfer layer, so that a plurality of LEDs are provided for each line in the Y direction from the first transfer substrate 3. Chip 2 is separated. At this time, the LED chip 2 separated as in the first transfer step is urged toward the second transfer substrate 4, and the first surface side of the LED chip 2 is transferred.
 ここで、図4に示すように、第1転写基板3をX方向に第1の速度で移動させ、第2転写基板4をX方向に第1の速度より速い第2の速度で移動させながら、第1転写基板のY方向に沿ってライン状にレーザ光51を照射して1ライン毎に複数のLEDチップ2を分離、第2転写基板4に向かって付勢させることで、第1転写基板3に第1のピッチでX方向、第2のピッチでY方向に配列されていたLEDチップ2を第2転写基板4に第1のピッチより広い第3のピッチでX方向、第2のピッチでY方向に配列して転写することができる。この第3のピッチは、ディスプレイを構成する回路基板におけるLEDチップのピッチとすることができる。転写されたLEDチップ2は第1の面側が第2転写基板4に転写されることでLEDチップ2のバンプは外側を向いている。 Here, as shown in FIG. 4, the first transfer substrate 3 is moved in the X direction at a first speed, and the second transfer substrate 4 is moved in the X direction at a second speed higher than the first speed. By irradiating the laser beam 51 in a line along the Y direction of the first transfer substrate, the plurality of LED chips 2 are separated for each line, and urged toward the second transfer substrate 4 to perform the first transfer. The LED chips 2 arranged on the substrate 3 in the X direction at the first pitch and in the Y direction at the second pitch are arranged on the second transfer substrate 4 in the X direction at the third pitch wider than the first pitch. Transfer can be arranged in the Y direction at a pitch. This third pitch can be the pitch of the LED chips on the circuit board constituting the display. The transferred LED chip 2 has its first surface transferred to the second transfer substrate 4 so that the bumps of the LED chip 2 face outward.
 第2転写工程を真空環境で実行することで、第1転写基板3から分離し付勢されるLEDチップ2が空気抵抗を受け位置ずれして第2転写基板4に転写されることを防止できる。さらに、位置ずれを防止するために、第1転写基板3と第2転写基板4との隙間は、できるだけ狭くすることが望ましく、実施例2においては、LEDチップ2の高さにわずかなクリアランスを加えた距離に設定している。 By performing the second transfer process in a vacuum environment, it is possible to prevent the LED chip 2 separated and energized from the first transfer substrate 3 from being displaced and receiving the air resistance and being transferred to the second transfer substrate 4. . Furthermore, in order to prevent displacement, it is desirable that the gap between the first transfer substrate 3 and the second transfer substrate 4 be as narrow as possible. In Example 2, a slight clearance is provided at the height of the LED chip 2. The added distance is set.
 第2転写基板4の表面には、図示しない転写層が設けられている。第1転写基板3から分離したLEDチップ2は、付勢されて第2転写基板4の表面に設けられた転写層に粘着、保持される。ここで、上述したように転写層とは、常温では粘着性があり、熱又は紫外線により固化し、レーザ光を照射することにより分解されてガスを発生する特性を有するものである。つまり、レーザ光により第1転写基板3の転写層が分解されてガスが発生し付勢力が発生して、粘着性を有した第2転写基板4の転写層に向かってLEDチップ2が付勢され、着弾した後、第2転写基板4の転写層がLEDチップ2のもつ熱によって固化されて保持されるためである。なお、LEDチップ2のもつ熱が低ければ、LEDチップ2が着弾した後転写層を加熱してもよい。 A transfer layer (not shown) is provided on the surface of the second transfer substrate 4. The LED chip 2 separated from the first transfer substrate 3 is urged and adhered and held on a transfer layer provided on the surface of the second transfer substrate 4. Here, as described above, the transfer layer is sticky at room temperature, has a property of being solidified by heat or ultraviolet light, and being decomposed by irradiation with laser light to generate gas. That is, the transfer layer of the first transfer substrate 3 is decomposed by the laser beam to generate gas and generate a biasing force, and the LED chip 2 is biased toward the transfer layer of the second transfer substrate 4 having adhesiveness. This is because the transfer layer of the second transfer substrate 4 is solidified and held by the heat of the LED chip 2 after landing. If the heat of the LED chip 2 is low, the transfer layer may be heated after the LED chip 2 has landed.
 なお、実施例2においては、LEDチップ2の転写時に、第1転写基板3及び第2転写基板4を共にX方向に移動させるように構成したが、必ずしもこれに限定されず、装置の都合により適宜変更可能である。例えば、ライン状のレーザ光51をX方向に沿って照射し、第1転写基板3及び第2転写基板4をY方向に移動させるように構成してもよい。また、ライン状のレーザ光51をY方向に沿って照射し、第1転写基板3をX方向、第2転写基板4を-X方向というように、互いに逆方向に移動させるように構成してもよい。すなわち、第1転写基板3と第2転写基板4とを互いに異なる速度で、ライン状のレーザ光51に対してその直交する方向に相対移動させるように構成すればよい。 In the second embodiment, the first transfer substrate 3 and the second transfer substrate 4 are both moved in the X direction when the LED chip 2 is transferred. It can be changed as appropriate. For example, the configuration may be such that the linear laser beam 51 is irradiated along the X direction, and the first transfer substrate 3 and the second transfer substrate 4 are moved in the Y direction. Further, the configuration is such that the linear laser beam 51 is irradiated along the Y direction, and the first transfer substrate 3 is moved in the opposite direction such as the X direction and the second transfer substrate 4 is the −X direction. Also good. That is, the first transfer substrate 3 and the second transfer substrate 4 may be configured to move relative to each other in a direction perpendicular to the line-shaped laser light 51 at different speeds.
 これによって、第1転写基板3に保持されていたLEDチップ2を異なるピッチで第2転写基板4に転写することができる。また、第1の速度や第2の速度を調整することにより、LEDチップ2を任意のピッチで第2転写基板4に転写することができる。 Thereby, the LED chips 2 held on the first transfer substrate 3 can be transferred to the second transfer substrate 4 at different pitches. Further, the LED chip 2 can be transferred to the second transfer substrate 4 at an arbitrary pitch by adjusting the first speed and the second speed.
 また、実施例2においては、第1転写基板3を上側に配置し、第2転写基板4を下側に配置するようにしたが、必ずしもこれに限定されず、配置の都合で適宜変更が可能である。例えば、第1転写基板3を第1転写工程のまま下側に配置し、第2転写基板4を上側に配置し、下側の第1転写基板3から上側の第2転写基板4に向かってLEDチップ2を付勢して転写してもよい。また、第1転写基板3と第2転写基板4とを隙間を有して対向させてZ方向に沿って立てた状態で第2転写工程を実行してもよい。 In the second embodiment, the first transfer substrate 3 is arranged on the upper side and the second transfer substrate 4 is arranged on the lower side. However, the present invention is not limited to this, and can be changed as appropriate for the convenience of arrangement. It is. For example, the first transfer substrate 3 is disposed on the lower side as it is in the first transfer step, the second transfer substrate 4 is disposed on the upper side, and the lower first transfer substrate 3 is directed to the upper second transfer substrate 4. The LED chip 2 may be energized and transferred. Alternatively, the second transfer process may be performed in a state where the first transfer substrate 3 and the second transfer substrate 4 are opposed to each other with a gap and are set up along the Z direction.
 次に、第2転写基板4をその法線を軸として90°回転させるとともにLEDチップ保持側を下向けにして上側に配置する第2転写基板回転工程を実行する。ここで、第2転写基板4をその法線を軸として90°回転させるとは、つまり、ライン状のレーザ光の長手方向に対して第2転写基板4の向きを90°回転させることをいう。第2転写基板回転工程は、真空環境で実行してもよいし、真空環境でなくてもよい。第2転写基板回転工程を実行することにより、X方向に横長配置だった第2転写基板4は、図5に示すように、第2転写基板4は90°回転し縦長配置となる。 Next, a second transfer substrate rotating step is performed in which the second transfer substrate 4 is rotated by 90 ° about the normal line as an axis, and the LED chip holding side is disposed on the upper side. Here, rotating the second transfer substrate 4 by 90 ° about the normal line as an axis means that the direction of the second transfer substrate 4 is rotated by 90 ° with respect to the longitudinal direction of the line-shaped laser beam. . The second transfer substrate rotation step may be executed in a vacuum environment or may not be in a vacuum environment. By performing the second transfer substrate rotating step, the second transfer substrate 4 that is horizontally long in the X direction is rotated 90 ° and is vertically long as shown in FIG.
続いて、回路基板配置工程を実行する。つまり、第2転写基板4に第1の面を保持されたLEDチップ2の第2の面と隙間を有して対向するように回路基板5を配置する。実施例2においては、保持したLEDチップ2が下を向くように第2転写基板を上側に、回路基板5を下側に配置する(図5参照)。この回路基板配置工程も真空環境で実行してもよいが、必ずしも真空環境でなくてもよい。 Subsequently, a circuit board placement step is executed. That is, the circuit board 5 is disposed so as to face the second surface of the LED chip 2 holding the first surface on the second transfer substrate 4 with a gap. In Example 2, the second transfer substrate is disposed on the upper side and the circuit substrate 5 is disposed on the lower side so that the held LED chip 2 faces downward (see FIG. 5). This circuit board placement step may also be performed in a vacuum environment, but it need not necessarily be in a vacuum environment.
 次に、第1実装工程を真空環境で実行する。つまり、第2転写基板4をX方向に第3の速度で移動させ、また、回路基板5をX方向に第3の速度より速い第4の速度で移動させる。さらに移動中の第2転写基板4にレーザ光51をY方向に沿ってライン状に照射し転写層を分解させて第2転写基板4からY方向における1ライン毎に複数のLEDチップ2を分離し、回路基板5に向かって付勢させる。そして、LEDチップ2の第2の面側を回路基板5に転写させる。回路基板5は、電極を有しており、この電極とLEDチップ2の第2の面に有したバンプとは接合した状態となる。 Next, the first mounting process is executed in a vacuum environment. That is, the second transfer substrate 4 is moved in the X direction at a third speed, and the circuit board 5 is moved in the X direction at a fourth speed that is faster than the third speed. Further, the moving second transfer substrate 4 is irradiated with laser light 51 in a line along the Y direction to decompose the transfer layer, and the plurality of LED chips 2 are separated from the second transfer substrate 4 for each line in the Y direction. Then, it is biased toward the circuit board 5. Then, the second surface side of the LED chip 2 is transferred to the circuit board 5. The circuit board 5 has electrodes, and the electrodes and the bumps on the second surface of the LED chip 2 are joined.
 ここで、図5に示すように、第2転写基板4をX方向に第3の速度で移動させ、回路基板5をX方向に第3の速度より速い第4の速度で移動させながら、第2転写基板4のY方向にライン状にレーザ光51を照射して1ライン毎に複数のLEDチップ2を分離、付勢させることで、第2転写基板回転工程で90°回転済の第2転写基板4に第2のピッチでX方向、第3のピッチでY方向に配列されていたLEDチップ2を、回路基板5に第2のピッチより広い第4のピッチでX方向、第3のピッチでY方向に配列して転写することができる。この第3のピッチ及び第4のピッチは、ディスプレイを構成する回路基板におけるLEDチップのピッチとすることができる。 Here, as shown in FIG. 5, the second transfer substrate 4 is moved in the X direction at a third speed, and the circuit board 5 is moved in the X direction at a fourth speed higher than the third speed. 2 The laser light 51 is irradiated in a line in the Y direction of the transfer substrate 4 to separate and energize the plurality of LED chips 2 for each line, thereby rotating the second transfer substrate rotated step by 90 °. The LED chips 2 arranged on the transfer substrate 4 in the X direction at the second pitch and in the Y direction at the third pitch are arranged on the circuit board 5 in the X direction and the third pitch at a fourth pitch wider than the second pitch. Transfer can be arranged in the Y direction at a pitch. The third pitch and the fourth pitch can be the pitch of the LED chips on the circuit board constituting the display.
 第2転写基板4と回路基板5がそれぞれX方向に移動しながらLEDチップ2を1ライン毎に転写していく様子を図5~図7に示す。図5は、第1実装工程の始まりの様子を示し、図6は、第1実装工程の途中の様子を示し、図7は、第1実装工程の最後の様子を示している。 FIGS. 5 to 7 show how the LED chip 2 is transferred line by line while the second transfer board 4 and the circuit board 5 move in the X direction. FIG. 5 shows a state of the beginning of the first mounting process, FIG. 6 shows a state in the middle of the first mounting process, and FIG. 7 shows a final state of the first mounting process.
なお、実施例2においては、LEDチップ2の転写時に、第2転写基板4及び回路基板5をX方向に移動させるように構成したが、必ずしもこれに限定されず、装置の都合により適宜変更可能である。例えば、ライン状のレーザ光51をX方向に沿って照射し、第2転写基板4及び回路基板5をY方向に移動させるように構成してもよい。また、ライン状のレーザ光51をY方向に沿って照射し、第2転写基板4をX方向、回路基板4を-X方向というように、互いに逆方向に移動させるように構成してもよい。すなわち、第2転写基板4と回路基板5とを互いに異なる速度で、ライン状のレーザ光51に対してその直交する方向に相対移動させるように構成すればよい。 In the second embodiment, the second transfer substrate 4 and the circuit substrate 5 are moved in the X direction when the LED chip 2 is transferred. However, the second transfer substrate 4 and the circuit substrate 5 are not necessarily limited to this, and can be changed as appropriate according to the convenience of the apparatus. It is. For example, the configuration may be such that the linear laser beam 51 is irradiated along the X direction and the second transfer substrate 4 and the circuit substrate 5 are moved in the Y direction. Further, the configuration may be such that the line-shaped laser beam 51 is irradiated along the Y direction, and the second transfer substrate 4 is moved in the X direction and the circuit substrate 4 is moved in the opposite directions such as the −X direction. . That is, the second transfer substrate 4 and the circuit substrate 5 may be configured to move relative to each other in a direction perpendicular to the line-shaped laser beam 51 at different speeds.
 また、実施例2においては、第2転写基板回転工程を実行して図5に示すように、第2転写基板4を縦長配置、回路基板5を横長配置にして第1実装工程を実行するように構成したが、必ずしもこれに限定されず、装置等の都合により適宜変更が可能である。例えば、第2転写基板回転工程を実行せず、第2転写基板4を横長配置のままで、ライン状のレーザ光の長手方向を90°回転させるとともに、回路基板5を縦長配置として回路基板配置工程及び第1実装工程を実行するように構成してもよい。つまり、ライン状のレーザ光の長手方向に対して第2転写基板4の向きを90°回転すればよい。 Further, in the second embodiment, the second transfer substrate rotating step is executed, and the first mounting step is executed with the second transfer substrate 4 arranged in a vertically long shape and the circuit board 5 arranged in a horizontally long shape as shown in FIG. However, the present invention is not necessarily limited to this, and can be appropriately changed depending on the convenience of the apparatus or the like. For example, the second transfer substrate rotating step is not executed, the second transfer substrate 4 is left in the horizontal arrangement, the longitudinal direction of the line-shaped laser light is rotated by 90 °, and the circuit board 5 is arranged in the vertical arrangement. You may comprise so that a process and a 1st mounting process may be performed. That is, the direction of the second transfer substrate 4 may be rotated by 90 ° with respect to the longitudinal direction of the line-shaped laser beam.
 さらに、実施例2においては、保持したLEDチップ2が下を向くように第2転写基板を上側に、回路基板5を下側に配置するように構成したが、必ずしもこれに限定されず都合により適宜変更が可能である。例えば、第2転写基板を第2転写工程のまま下側に配置し、回路基板5を上側に配置して、下側の第2転写基板4から上側の回路基板5に向かってLEDチップ2を付勢して転写してもよい。また、第2転写基板4と回路基板5とを隙間を有して対向させてZ方向に沿って立てた状態で第1実装工程を実行してもよい。 Further, in the second embodiment, the second transfer substrate is arranged on the upper side and the circuit board 5 is arranged on the lower side so that the held LED chip 2 faces downward. Changes can be made as appropriate. For example, the second transfer substrate is disposed on the lower side as it is in the second transfer step, the circuit board 5 is disposed on the upper side, and the LED chip 2 is directed from the lower second transfer substrate 4 toward the upper circuit substrate 5. It may be energized and transferred. Alternatively, the first mounting process may be performed in a state where the second transfer substrate 4 and the circuit substrate 5 are opposed to each other with a gap and are standing in the Z direction.
 また、第1実装工程は、上述したように真空環境で実行される。真空環境で第1実装工程を実行することで、第2転写基板4から分離し付勢されるLEDチップ2が空気抵抗を受け位置ずれして回路基板5に転写されることを防止できる。また、位置ずれをより防止するために、第2転写基板4と回路基板5との隙間は、できるだけ狭くすることが望ましく、実施例2においては、LEDチップ2の高さにわずかなクリアランスを加えた距離に設定している。 Further, the first mounting process is executed in a vacuum environment as described above. By executing the first mounting step in a vacuum environment, it is possible to prevent the LED chip 2 separated and energized from the second transfer substrate 4 from being displaced and receiving the air resistance and being transferred to the circuit substrate 5. In order to further prevent the positional deviation, it is desirable that the gap between the second transfer substrate 4 and the circuit substrate 5 be as narrow as possible. In the second embodiment, a slight clearance is added to the height of the LED chip 2. The distance is set.
 回路基板5の表面には、図示しない転写層が設けられている。第2転写基板4から分離したLEDチップ2は付勢力で回路基板5の表面に設けられた転写層に転写される。ここで、上述したように転写層とは、常温では粘着性があり、熱又は紫外線により固化し、レーザ光を照射することにより分解されてガスを発生する特性を有するものである。つまり、レーザ光により第2転写基板4の転写層が分解されてガスが発生し付勢力が発生して、粘着性を有した回路基板5の転写層に向かってLEDチップ2が付勢され、着弾した後、回路基板5の転写層がLEDチップ2のもつ熱によって固化されて保持される。なお、LEDチップ2のもつ熱が低ければ、LEDチップ2が着弾した後転写層を加熱してもよい。 A transfer layer (not shown) is provided on the surface of the circuit board 5. The LED chip 2 separated from the second transfer substrate 4 is transferred to a transfer layer provided on the surface of the circuit substrate 5 by an urging force. Here, as described above, the transfer layer is sticky at room temperature, has a property of being solidified by heat or ultraviolet light, and being decomposed by irradiation with laser light to generate gas. That is, the transfer layer of the second transfer substrate 4 is decomposed by the laser beam to generate gas and generate a biasing force, and the LED chip 2 is biased toward the transfer layer of the circuit board 5 having adhesiveness. After landing, the transfer layer of the circuit board 5 is solidified and held by the heat of the LED chip 2. If the heat of the LED chip 2 is low, the transfer layer may be heated after the LED chip 2 has landed.
 第1実装工程を実行することにより、前述したように、回路基板5に第2のピッチより広い第4のピッチでX方向、第1のピッチより広い第3のピッチでY方向にLEDチップ2が配列される。回路基板5又は第2転写基板4をY方向に第1のピッチ分、つまり、少なくともY方向におけるLEDチップ2の長さ分の距離ずらして、第1実装工程を再度実行することにより、Y方向に2種類目のLEDチップ2をライン状に配列することができる。すなわち、第1実装工程において回路基板5に既に転写済のライン状のレーザ光の長手方向におけるLEDチップ間に新たなLEDチップを配置するように、第1実装工程を再度実行することにより、Y方向に2種類目のLEDチップ2をライン状に配列することができる。さらに、同様に3回目の第1実装工程を実行することにより、Y方向に3種類目のLEDチップ2を1ラインに配列することができる。 By executing the first mounting step, as described above, the LED chip 2 is arranged on the circuit board 5 in the X direction at a fourth pitch wider than the second pitch and in the Y direction at a third pitch wider than the first pitch. Are arranged. The circuit board 5 or the second transfer board 4 is shifted in the Y direction by a first pitch, that is, at least by the distance of the length of the LED chip 2 in the Y direction, and the first mounting process is performed again, thereby the Y direction. The second kind of LED chips 2 can be arranged in a line. That is, by executing the first mounting step again so as to arrange a new LED chip between the LED chips in the longitudinal direction of the line-shaped laser light already transferred to the circuit board 5 in the first mounting step, Y The second kind of LED chips 2 can be arranged in a line in the direction. Furthermore, similarly, by executing the third first mounting step, it is possible to arrange the third types of LED chips 2 in one line in the Y direction.
ここで、第3のピッチを第1のピッチの3倍になるように、前述の第2転写工程における第1の速度及び第2の速度を設定しておけば、3種類のLEDチップ2を配列することにより、Y方向にほぼ隙間のない配列とすることができる。そして、1種類目のLEDチップ2を赤のLEDチップ2(R)とし、2種類目のLEDチップ2を緑のLEDチップ2(G)とし、3種類目のLEDチップ2を青のLEDチップ2(B)とすれば、赤、緑、青の各LEDチップ2を隙間なく配列させることができる(図8参照)。 Here, if the first speed and the second speed in the second transfer step are set so that the third pitch is three times the first pitch, three types of LED chips 2 can be obtained. By arranging them, it is possible to obtain an arrangement with almost no gap in the Y direction. The first LED chip 2 is a red LED chip 2 (R), the second LED chip 2 is a green LED chip 2 (G), and the third LED chip 2 is a blue LED chip. If 2 (B), the red, green, and blue LED chips 2 can be arranged without gaps (see FIG. 8).
 ここで、第2転写基板4又は回路基板5をY方向に第1のピッチ分ずつずらして2回目の第1実装工程を実行することによって、第2転写基板4に保持されているLEDチップ2が回路基板5に既に転写済のLEDチップ2を乗り越えずに脇を通って2種類目のLEDチップ2を回路基板5に転写することができる。このため、第2転写基板4と回路基板5との隙間をLEDチップ2の高さにわずかなクリアランスを加えた隙間に設定することができ、LEDチップ2の付勢距離を最小限にして、位置ずれを防止して高精度に安定して転写することができる。 Here, the second transfer substrate 4 or the circuit board 5 is shifted by the first pitch in the Y direction and the second first mounting process is executed, whereby the LED chip 2 held on the second transfer substrate 4 is performed. However, the second type LED chip 2 can be transferred to the circuit board 5 through the side without passing over the LED chip 2 already transferred onto the circuit board 5. For this reason, the gap between the second transfer board 4 and the circuit board 5 can be set to a gap obtained by adding a slight clearance to the height of the LED chip 2, minimizing the biasing distance of the LED chip 2, It is possible to prevent misalignment and stably transfer with high accuracy.
 この後、回路基板5に保持されたLEDチップ2をヘッド等によって加圧し加熱することにより、確実にLEDチップ2のバンプと回路基板5の電極とを接合するように実装してもよい。なお、実施例2においては、回路基板5の表面に転写層を設ける構成としたが、必ずしもこれに限定されず、都合により適宜変更することができる。例えば、回路基板5の表面に転写層を設けずに、第1実装工程において、LEDチップ2の第2の面に設けたバンプと回路基板5の電極とを直接接合する構成としてもよい。 Thereafter, the LED chip 2 held on the circuit board 5 may be pressed and heated by a head or the like, so that the bumps of the LED chip 2 and the electrodes of the circuit board 5 are securely bonded. In the second embodiment, the transfer layer is provided on the surface of the circuit board 5. However, the transfer layer is not necessarily limited to this, and can be appropriately changed for convenience. For example, without providing a transfer layer on the surface of the circuit board 5, the bumps provided on the second surface of the LED chip 2 and the electrodes of the circuit board 5 may be directly bonded in the first mounting step.
 なお、転写等に失敗して、回路基板5に転写した際に、LEDチップ2の脱落や位置ずれが発生する場合がある。そういう場合には、リペアを実行してもよい。リペアは、キャリア基板1におけるLEDチップ2の第1の面と反対側の面である第2の面に隙間を有して対向するように回路基板5を配置した後、キャリア基板1にレーザ光を照射することにより、キャリア基板1からLEDチップ2を1個ずつ分離して回路基板5上にLEDチップ2を付勢させてLEDチップ2を回路基板5に転写させることにより実装する実装工程を真空環境で実行することでリペアする。もちろん、位置ずれしたLEDチップ2が回路基板5上にある場合は、事前にヘッド等により除去しておく。 It should be noted that when the transfer or the like fails and the transfer to the circuit board 5 occurs, the LED chip 2 may be dropped or misaligned. In such a case, repair may be executed. In the repair, the circuit board 5 is disposed so as to face the second surface of the carrier substrate 1 opposite to the first surface of the LED chip 2 with a gap, and then laser light is applied to the carrier substrate 1. , The LED chip 2 is separated from the carrier substrate 1 one by one, the LED chip 2 is urged onto the circuit board 5 and the LED chip 2 is transferred to the circuit board 5 to mount the mounting process. Repair by running in a vacuum environment. Of course, if the misaligned LED chip 2 is on the circuit board 5, it is removed in advance by a head or the like.
(実装装置)
次に、本発明の実施例2における実装装置について、図9を参照して説明する。図9は、本発明の実施例2における実装装置を説明する図である。実装装置150は、レーザ光照射部52がライン状のレーザ光51を照射する点、及び回路基板5に転写したLEDチップを加圧、加熱することが可能な図示しないヘッドを備えている点で、実施例1における転写装置50と異なっている。
(Mounting device)
Next, the mounting apparatus in Example 2 of this invention is demonstrated with reference to FIG. FIG. 9 is a diagram for explaining the mounting apparatus according to the second embodiment of the present invention. The mounting apparatus 150 includes a head (not shown) capable of pressing and heating the LED chip transferred to the circuit board 5 in that the laser beam irradiation unit 52 irradiates the line-shaped laser beam 51. This is different from the transfer device 50 in the first embodiment.
 実装装置150は、図示しない真空化部を備え、全体を真空チャンバーとして真空環境にすることができる。また、実装装置150は、転写基板を保持しX方向に移動可能な転写基板保持部54、転写基板保持部54の下側にあって転写基板に隙間を有して対向するように被転写基板を保持し、X方向、Y方向、Z方向、及びθ方向に移動可能な被転写基板保持部55、転写基板にレーザ光51を照射するレーザ光照射部52、及び転写基板からLEDチップ2を分離し付勢させてLEDチップ2を被転写基板に転写するように、レーザ光照射部52、転写基板保持部54、及び被転写基板保持部55を制御する図示しない制御部を備えている。また、回路基板5に転写したLEDチップ2を加圧、加熱する図示しないヘッドを備えている。 The mounting apparatus 150 includes a vacuuming unit (not shown), and the whole can be made into a vacuum environment as a vacuum chamber. Further, the mounting apparatus 150 holds the transfer substrate and can move in the X direction. The transfer substrate holding unit 54 is located below the transfer substrate holding unit 54 and is opposed to the transfer substrate with a gap. The transfer target substrate holding portion 55 that can move in the X, Y, Z, and θ directions, the laser light irradiation portion 52 that irradiates the transfer substrate with the laser light 51, and the LED chip 2 from the transfer substrate. A control unit (not shown) that controls the laser beam irradiation unit 52, the transfer substrate holding unit 54, and the transfer substrate holding unit 55 is provided so as to transfer the LED chip 2 to the transfer substrate by separating and energizing the LED chip 2. In addition, a head (not shown) that pressurizes and heats the LED chip 2 transferred to the circuit board 5 is provided.
 レーザ光照射部52は、実装装置150に固定して設けられる。実施例2においては、1ラインのLEDチップ2に照射するようにライン状のレーザ光51を照射する。また、レーザ光照射部52に近接した位置にカメラ53が設けられている。カメラ53は、転写基板又は被転写基板の位置を認識し、被転写基板保持部55をX、Y、又はθ方向に移動させてアライメントを行う。 The laser beam irradiation unit 52 is provided fixed to the mounting apparatus 150. In the second embodiment, the line-shaped laser beam 51 is irradiated so as to irradiate one line of LED chips 2. A camera 53 is provided at a position close to the laser beam irradiation unit 52. The camera 53 recognizes the position of the transfer substrate or the transfer substrate, and moves the transfer substrate holding part 55 in the X, Y, or θ direction to perform alignment.
 ここで、実施例2においては、転写基板とは、前述した第1転写工程におけるキャリア基板1、第2転写工程における第1転写基板3、又は第1実装工程における第2転写基板4を指し、被転写基板とは、第1転写工程における第1転写基板3、第2転写工程における第2転写基板4、又は第1実装工程における回路基板5を指す。 Here, in Example 2, the transfer substrate refers to the carrier substrate 1 in the first transfer step, the first transfer substrate 3 in the second transfer step, or the second transfer substrate 4 in the first mounting step, The transferred substrate refers to the first transfer substrate 3 in the first transfer step, the second transfer substrate 4 in the second transfer step, or the circuit substrate 5 in the first mounting step.
 つまり、第1転写工程においては、キャリア基板1が転写基板保持部54に保持され、第1転写基板3が被転写基板保持部55に保持される。また、第2転写工程においては、第1転写基板3が表裏反転させられて転写基板保持部54に保持され、第2転写基板4が被転写基板保持部55に保持され、第1実装工程においては、第2転写基板4が表裏反転させられて転写基板保持部54に保持され、回路基板5が被転写基板保持部55に保持される。 That is, in the first transfer process, the carrier substrate 1 is held by the transfer substrate holding part 54, and the first transfer substrate 3 is held by the transferred substrate holding part 55. In the second transfer step, the first transfer substrate 3 is reversed and held on the transfer substrate holding portion 54, and the second transfer substrate 4 is held on the transfer substrate holding portion 55. In the first mounting step, The second transfer substrate 4 is turned upside down and held by the transfer substrate holding portion 54, and the circuit board 5 is held by the transfer substrate holding portion 55.
 ここで、前述したように、第2転写工程において、第1転写基板3を下側に配置する場合は被転写基板保持部55に保持し、第2転写基板4を上側の転写基板保持部54に保持するようにしてもよい。この場合は、第1実装工程において、第2転写基板4はそのまま上側の転写基板保持部54に保持し、回路基板5を被転写基板保持部55に保持するようにすればよい。また、第2転写工程において、第1転写基板3を上側の転写基板保持部54に保持し、第2転写基板4を下側の被転写基板保持部55に保持して、第2転写工程を実行した場合、第2転写基板4をそのまま下側の被転写基板保持部55に保持し、回路基板5を上側の転写基板保持部54に保持するようにして、第1実装工程を実行するようにしてもよい。 Here, as described above, in the second transfer step, when the first transfer substrate 3 is disposed on the lower side, the first transfer substrate 3 is held on the transfer substrate holding portion 55, and the second transfer substrate 4 is held on the upper transfer substrate holding portion 54. You may make it hold | maintain. In this case, in the first mounting step, the second transfer substrate 4 may be held as it is on the upper transfer substrate holding portion 54 and the circuit board 5 may be held on the transfer substrate holding portion 55. In the second transfer step, the first transfer substrate 3 is held on the upper transfer substrate holding portion 54, the second transfer substrate 4 is held on the lower transfer target substrate holding portion 55, and the second transfer step is performed. When executed, the first transfer process is executed by holding the second transfer substrate 4 as it is in the lower transfer substrate holding portion 55 and holding the circuit board 5 in the upper transfer substrate holding portion 54. It may be.
 また、転写基板に保持されたLEDチップ2と被転写基板との間に隙間を有さずに転写を行う場合は、被転写基板保持部55をZ方向に移動させて、転写基板保持部54に保持された転写基板に保持されたLEDチップ2と被転写基板とを接触させる。この場合は、後述するようなレーザ光照射中の転写基板保持部54及び被転写基板保持部55は、X方向移動を行わない。 Further, when transferring without a gap between the LED chip 2 held on the transfer substrate and the transfer substrate, the transfer substrate holding portion 55 is moved in the Z direction to transfer the transfer substrate holding portion 54. The LED chip 2 held on the transfer substrate held on the substrate is brought into contact with the transfer substrate. In this case, the transfer substrate holding unit 54 and the transfer substrate holding unit 55 during the laser beam irradiation described later do not move in the X direction.
 転写基板に保持されたLEDチップ2と被転写基板との間に隙間を有して実行する第2転写工程、及び第1実装工程では、転写基板を保持した転写基板保持部54が各速度でX方向に移動し、被転写基板保持部55がX方向に各速度で移動する状態において、レーザ光照射部52がライン状にレーザ光51を照射して、1ライン毎に複数のLEDチップ2を分離して、被転写基板保持部55に保持された被転写基板に付勢して転写される。この際、少なくとも第2転写工程及び第1実装工程においては、真空化部が転写装置50の真空チャンバー内を真空環境に維持する。 In the second transfer step and the first mounting step, which are performed with a gap between the LED chip 2 held on the transfer substrate and the substrate to be transferred, the transfer substrate holding portion 54 holding the transfer substrate at each speed. In the state where the transfer substrate holder 55 moves in the X direction and moves at each speed in the X direction, the laser beam irradiation unit 52 irradiates the laser beam 51 in a line shape, and a plurality of LED chips 2 per line. Is transferred to the transfer target substrate held by the transfer target substrate holding unit 55 while being urged. At this time, at least in the second transfer step and the first mounting step, the evacuation unit maintains the inside of the vacuum chamber of the transfer device 50 in a vacuum environment.
 第2転写基板配置工程、第2転写基板回転工程、及び回路基板配置工程においては、ロボット等で構成される図示しない搬送部により各基板を配置又は回転させることができる。 In the second transfer substrate arranging step, the second transfer substrate rotating step, and the circuit board arranging step, each substrate can be arranged or rotated by a transport unit (not shown) constituted by a robot or the like.
なお、実施例2においては、1台の実装装置150によって、各工程を実行する構成としたが、必ずしもこれに限定されず、都合により適宜変更が可能である。例えば、実装装置150を3台並べて、第1転写工程、第2転写工程、及び第1実装工程を各実装装置150で実行するように構成してもよい。この場合も第2転写基板配置工程、第2転写基板回転工程、及び回路基板配置工程においては、ロボット等で構成される図示しない搬送部により各基板を配置又は回転させる構成とすればよい。 In the second embodiment, each process is executed by one mounting apparatus 150. However, the present invention is not necessarily limited to this and can be appropriately changed for convenience. For example, three mounting apparatuses 150 may be arranged, and the first transfer process, the second transfer process, and the first mounting process may be executed by each mounting apparatus 150. Also in this case, in the second transfer substrate arranging step, the second transfer substrate rotating step, and the circuit board arranging step, each substrate may be arranged or rotated by a transport unit (not shown) constituted by a robot or the like.
 また、実施例2においては、レーザ光照射部52を実装装置150に固定して設け、転写基板保持部54、及び被転写基板保持部55を移動させる構成としたが、必ずしもこれに限定されず、装置の都合により適宜変更が可能である。例えば、転写基板保持部54を実装装置150に固定して設け、レーザ光照射部52、及び被転写基板保持部55を移動させる構成としてもよいし、被転写基板保持部55を実装装置150に固定して設け、レーザ光照射部52、及び転写基板保持部54を移動させる構成としてもよい。 In the second embodiment, the laser beam irradiation unit 52 is fixed to the mounting apparatus 150 and the transfer substrate holding unit 54 and the transfer substrate holding unit 55 are moved. However, the present invention is not limited to this. It can be changed as appropriate according to the convenience of the apparatus. For example, the transfer substrate holding unit 54 may be fixed to the mounting device 150 and the laser beam irradiation unit 52 and the transfer substrate holding unit 55 may be moved, or the transfer substrate holding unit 55 may be mounted on the mounting device 150. It is good also as a structure which fixes and provides and moves the laser beam irradiation part 52 and the transfer substrate holding part 54. FIG.
 このように、実施例2においては、キャリア基板に第1の面を保持されたダイシング後のLEDチップを回路基板に実装する実装方法であって、
前記キャリア基板から前記LEDチップを分離して第1転写基板に前記LEDチップの前記第1の面と反対側の第2の面側を転写して保持させる第1転写工程と、
前記第1転写基板に前記第2の面を保持された前記LEDチップの前記第1の面と隙間を有して対向するように第2転写基板を配置する第2転写基板配置工程と、
前記第1転写基板にライン状のレーザ光を照射して1ライン分の複数の前記LEDチップを前記第1転写基板から分離し前記第2転写基板に向かって付勢させるとともに、前記第1転写基板と前記第2転写基板とを互いに異なる速度で、前記ライン状のレーザ光に対してその直交する方向に相対移動させて、前記LEDチップの第1の面側を前記第2転写基板に転写する第2転写工程と、
前記ライン状のレーザ光に対して、前記第2転写基板をその法線を軸として90°回転させて前記第2転写基板を配置する第2転写基板回転工程と、
前記第2転写基板に前記第1の面を保持された前記LEDチップの前記第2の面と隙間を有して対向するように前記回路基板を配置する回路基板配置工程と、
前記第2転写基板にライン状のレーザ光を照射して1ライン分の複数の前記LEDチップを前記第2転写基板から分離し前記回路基板に向かって付勢させるとともに、前記第2転写基板と前記回路基板とを互いに異なる速度で、前記ライン状のレーザ光に対してその直交する方向に相対移動させて、前記LEDチップの第2の面側を前記回路基板に転写することにより前記LEDチップのバンプと前記回路基板の電極とを接合させる第1実装工程と、を備え、
少なくとも前記第2転写工程、及び前記第1実装工程を真空環境で実行することを特徴とする実装方法により、転写時の空気抵抗の影響を排除して、高精度にLEDチップを転写し実装することができるとともに、1ライン毎に複数のLEDチップを転写することで高速に転写、実装することができる。
Thus, in Example 2, the mounting method of mounting the LED chip after dicing with the first surface held by the carrier substrate on the circuit board,
A first transfer step of separating the LED chip from the carrier substrate and transferring and holding a second surface side opposite to the first surface of the LED chip to the first transfer substrate;
A second transfer substrate disposing step of disposing a second transfer substrate so as to face the first surface of the LED chip holding the second surface on the first transfer substrate with a gap;
The first transfer substrate is irradiated with a line-shaped laser beam to separate a plurality of LED chips for one line from the first transfer substrate and urge the LED chips toward the second transfer substrate, and the first transfer The substrate and the second transfer substrate are moved relative to each other in a direction perpendicular to the line-shaped laser light at different speeds, and the first surface side of the LED chip is transferred to the second transfer substrate. A second transfer step,
A second transfer substrate rotating step of disposing the second transfer substrate by rotating the second transfer substrate by 90 ° about the normal line with respect to the line-shaped laser beam;
A circuit board disposing step of disposing the circuit board so as to face the second surface of the LED chip holding the first surface on the second transfer substrate with a gap;
A plurality of LED chips for one line are separated from the second transfer substrate by irradiating the second transfer substrate with a line-shaped laser beam and urged toward the circuit board, and the second transfer substrate and The LED chip is transferred by moving the circuit board relative to the line-shaped laser light at different speeds in a direction perpendicular to the circuit board, and transferring the second surface side of the LED chip to the circuit board. A first mounting step of bonding the bump of the circuit board and the electrode of the circuit board,
At least the second transfer step and the first mounting step are performed in a vacuum environment, and the effect of air resistance during transfer is eliminated and the LED chip is transferred and mounted with high accuracy. In addition, it is possible to transfer and mount at a high speed by transferring a plurality of LED chips for each line.
 また、実施例2においては、回路基板にLEDチップを実装する実装装置であって、
前記実装装置内を真空環境にする真空化部と、
前記LEDチップが配列された転写基板にライン状のレーザ光を照射するレーザ光照射部と、
前記転写基板を保持し、第1方向に移動可能な転写基板保持部と、
前記転写基板に保持された前記LEDチップと隙間を有して対向するように被転写基板又は前記回路基板を保持し、少なくとも前記第1方向に移動可能な被転写基板保持部と、
前記レーザ光照射部、前記転写基板保持部、及び前記被転写基板保持部を制御する制御部と、を備え、
前記制御部は、前記転写基板と前記被転写基板又は前記回路基板とを互いに異なる速度で、前記ライン状のレーザ光に対してその直交する方向に相対移動させて、前記ライン状のレーザ光に対応した1ライン分の複数の前記LEDチップを分離、付勢して前記被転写基板又は前記回路基板に転写するように制御することを特徴とする実装装置により、転写時の空気抵抗の影響を排除して、高精度にLEDチップを転写し実装することができるとともに、1ライン毎に複数のLEDチップを転写することで高速に転写、実装することができる。
In Example 2, a mounting device for mounting an LED chip on a circuit board,
A evacuation unit for creating a vacuum environment in the mounting apparatus;
A laser beam irradiation unit that irradiates the transfer substrate on which the LED chips are arranged with a line-shaped laser beam;
A transfer substrate holding unit that holds the transfer substrate and is movable in a first direction;
A transfer substrate holding unit that holds the transfer substrate or the circuit substrate so as to face the LED chip held on the transfer substrate with a gap, and is movable in at least the first direction;
A controller that controls the laser beam irradiation unit, the transfer substrate holding unit, and the transfer substrate holding unit;
The control unit moves the transfer substrate and the transfer substrate or the circuit substrate relative to each other in a direction perpendicular to the line-shaped laser beam at different speeds, thereby converting the line-shaped laser beam into the line-shaped laser beam. The mounting device characterized in that the plurality of LED chips corresponding to one line are separated and energized to control the transfer to the transferred substrate or the circuit board, thereby reducing the influence of air resistance during transfer. The LED chip can be transferred and mounted with high accuracy, and at the same time, a plurality of LED chips can be transferred and mounted at high speed for each line.
 本発明の実施例3は、第1転写工程が実施例2と異なっている。本発明の実施例3における実装方法について図10を参照して説明する。図10は、本発明の実施例3における実装方法の第1転写工程を説明する図である。 Example 3 of the present invention is different from Example 2 in the first transfer process. A mounting method according to the third embodiment of the present invention will be described with reference to FIG. FIG. 10 is a diagram illustrating the first transfer process of the mounting method according to the third embodiment of the present invention.
 実施例3における第1転写工程では、まず、第1の面がキャリア基板1に保持されたLEDチップ2の第2の面を第1転写基板3表面の図示しない粘着層に貼付けて転写する。次に、キャリア基板1のLEDチップ2を保持する側と反対側をグラインダ56でバックグラインドする。つまり、キャリア基板1をLEDチップ2が設けられている側と反対側から削り落として除去する。特に、赤色LEDの場合にはレーザリフトオフが適用できないため、このバックグラインドの手法を用いる。 In the first transfer step in Example 3, first, the second surface of the LED chip 2 having the first surface held by the carrier substrate 1 is attached to an adhesive layer (not shown) on the surface of the first transfer substrate 3 and transferred. Next, the side opposite to the side holding the LED chip 2 of the carrier substrate 1 is back-ground by the grinder 56. That is, the carrier substrate 1 is removed by scraping from the side opposite to the side where the LED chip 2 is provided. In particular, since the laser lift-off cannot be applied to a red LED, this back grinding method is used.
 バックグラインドの結果、LEDチップ2は第1転写基板3の転写層の粘着性により保持されて、図10(b)に示すように第1転写基板3にLEDチップ2が転写、保持された構成となる。実施例3における第1転写工程は、実装装置150にグラインダ56を設けて実行してもよいし、実装装置150の前工程にグラインダ56を設けたバックグライド装置を配置して実行してもよい。 As a result of back grinding, the LED chip 2 is held by the adhesiveness of the transfer layer of the first transfer substrate 3, and the LED chip 2 is transferred and held on the first transfer substrate 3 as shown in FIG. 10B. It becomes. The first transfer process in the third embodiment may be performed by providing the mounting apparatus 150 with the grinder 56, or may be performed by arranging a back-glide apparatus having the grinder 56 in the previous process of the mounting apparatus 150. .
 このように実施例3においては、レーザリフトオフの手法が用いられない場合に、バックグラインドの手法で、第1転写工程を実行することができる。 As described above, in Example 3, when the laser lift-off method is not used, the first transfer process can be executed by the back-grind method.
 本発明の実施例4は、第2転写基板回転工程より後の工程が実施例2とは異なっている。実施例4について、図11~図16を参照して説明する。図11は、本発明の実施例4における実装方法の第3転写工程の始まりを説明する図である。図12は、本発明の実施例4における実装方法の第3転写工程の途中を説明する図である。図13は、本発明の実施例4おける実装方法の第3転写工程の最後を説明する図である。図14は、本発明の実施例4における実装方法によるリペアを説明する図である。図15は、本発明の実施例4における実装方法の第4転写工程及び第2実装工程を説明する図である。図16は、本発明の実施例4における実装方法のリペア時のLEDチップ転写を説明する図である。 Example 4 of the present invention is different from Example 2 in the process after the second transfer substrate rotating process. A fourth embodiment will be described with reference to FIGS. FIG. 11 is a diagram illustrating the beginning of the third transfer step of the mounting method according to the fourth embodiment of the present invention. FIG. 12 is a diagram for explaining the middle of the third transfer step of the mounting method according to the fourth embodiment of the present invention. FIG. 13 is a diagram illustrating the last of the third transfer step of the mounting method according to the fourth embodiment of the present invention. FIG. 14 is a diagram illustrating repair by the mounting method according to the fourth embodiment of the present invention. FIG. 15 is a diagram illustrating a fourth transfer process and a second mounting process of the mounting method according to the fourth embodiment of the present invention. FIG. 16 is a diagram for explaining LED chip transfer at the time of repair in the mounting method according to the fourth embodiment of the present invention.
 実施例4は、主に、リペアを必要とする場合に実行される。つまり、第2転写基板回転工程の後に、第3転写基板配置工程、第3転写工程、リペア工程、第4転写基板配置工程、第4転写工程、回路基板配置工程、及び第2実装工程を順次実行する。 Example 4 is mainly executed when repair is required. That is, after the second transfer substrate rotation step, the third transfer substrate placement step, the third transfer step, the repair step, the fourth transfer substrate placement step, the fourth transfer step, the circuit board placement step, and the second mounting step are sequentially performed. Execute.
 第2転写基板回転工程の後に、まず第3転写基板配置工程を実行する。第3転写基板配置工程では、第1の面が第2転写基板4に保持されたLEDチップ2の第2の面に隙間を有して対向するように第3転写基板105を配置する(図11参照)。このとき、実施例4においては、保持したLEDチップ2を下に向けて第2転写基板4を上側に配置し、第3転写基板105を下側に配置する。第3転写基板配置工程は、真空環境で実行してもよいし、真空環境でなくてもよい。 After the second transfer substrate rotating step, a third transfer substrate arranging step is first executed. In the third transfer substrate placement step, the third transfer substrate 105 is placed so that the first surface faces the second surface of the LED chip 2 held on the second transfer substrate 4 with a gap (see FIG. 11). At this time, in Example 4, the second transfer substrate 4 is disposed on the upper side with the held LED chip 2 facing down, and the third transfer substrate 105 is disposed on the lower side. The third transfer substrate placement step may be executed in a vacuum environment or not in a vacuum environment.
次に、第3転写工程を真空環境にて実行する。図11に示すように、第2転写基板4をX方向に第3の速度で移動させ、また、第3転写基板105をX方向に第3の速度より速い第4の速度で移動させる。さらに移動中の第2転写基板4にレーザ光51をライン状に照射し転写層の粘着力を低減させて、第2転写基板4からY方向における1ライン毎に複数のLEDチップ2を分離して、転写層を分解したことによる付勢力により第3転写基板105に向かってLEDチップ2を付勢させて第2の面側を転写する。第3転写基板105には、図示しない転写層が設けられていて、転写層は付勢されてきたLEDチップ2のもつ熱により固化して保持される。転写されたLEDチップ2は第2の面側が第3転写基板105に転写されることでLEDチップ2のバンプは第3転写基板105側に向いている。 Next, the third transfer process is performed in a vacuum environment. As shown in FIG. 11, the second transfer substrate 4 is moved in the X direction at a third speed, and the third transfer substrate 105 is moved in the X direction at a fourth speed higher than the third speed. Further, the moving second transfer substrate 4 is irradiated with laser light 51 in a line shape to reduce the adhesive force of the transfer layer, and the plurality of LED chips 2 are separated from the second transfer substrate 4 for each line in the Y direction. Thus, the LED chip 2 is urged toward the third transfer substrate 105 by the urging force generated by disassembling the transfer layer, and the second surface side is transferred. The third transfer substrate 105 is provided with a transfer layer (not shown), and the transfer layer is solidified and held by the heat of the LED chip 2 that has been biased. The second surface side of the transferred LED chip 2 is transferred to the third transfer substrate 105, so that the bumps of the LED chip 2 face the third transfer substrate 105 side.
 第2転写基板4をX方向に第3の速度で移動させ、第3転写基板105をX方向に第3の速度より速い第4の速度で移動させながら、第2転写基板4のY方向にライン状にレーザ光51を照射して1ライン毎に複数のLEDチップ2を分離、転写させることで、第2転写基板回転工程で90°回転した第2転写基板4に第2のピッチでX方向、第3のピッチでY方向に配列されていたLEDチップ2を、第3転写基板105に第2のピッチより広い第4のピッチでX方向、第3のピッチでY方向に配列して転写することができる。この第3のピッチ及び第4のピッチは、ディスプレイを構成する回路基板におけるLEDチップのピッチとすることができる。 The second transfer substrate 4 is moved in the X direction at a third speed, and the third transfer substrate 105 is moved in the X direction at a fourth speed higher than the third speed, while the second transfer substrate 4 is moved in the Y direction. By irradiating the laser beam 51 in a line shape and separating and transferring the plurality of LED chips 2 for each line, the second transfer substrate 4 rotated by 90 ° in the second transfer substrate rotation process has a second pitch X. LED chips 2 arranged in the Y direction at the third pitch are arranged on the third transfer substrate 105 in the X direction at the fourth pitch wider than the second pitch and in the Y direction at the third pitch. Can be transferred. The third pitch and the fourth pitch can be the pitch of the LED chips on the circuit board constituting the display.
 第2転写基板4と第3転写基板105とがそれぞれX方向に移動しながらLEDチップ2を転写していく様子を図11~図13に示す。図11は、第3転写工程の始まりの様子を示し、図12は、第3転写工程の途中の様子を示し、図13は、第3転写工程の最後の様子を示している。 11 to 13 show how the LED chip 2 is transferred while the second transfer substrate 4 and the third transfer substrate 105 move in the X direction. FIG. 11 shows the beginning of the third transfer step, FIG. 12 shows the state during the third transfer step, and FIG. 13 shows the final state of the third transfer step.
 また、第3転写工程は、上述したように真空環境で実行される。真空環境で第3転写工程を実行することで、第2転写基板4から分離し付勢されるLEDチップ2が空気抵抗を受けて、第3転写基板105に位置ずれして転写されることを防止できる。また、位置ずれをより防止するために、第2転写基板4と第3転写基板105との隙間は、できるだけ狭くすることが望ましく、実施例4においては、LEDチップ2の高さにわずかなクリアランスを加えた距離に設定している。 In addition, the third transfer process is performed in a vacuum environment as described above. By executing the third transfer process in a vacuum environment, the LED chip 2 separated and energized from the second transfer substrate 4 receives air resistance and is transferred to the third transfer substrate 105 with a positional shift. Can be prevented. Further, in order to further prevent the displacement, it is desirable that the gap between the second transfer substrate 4 and the third transfer substrate 105 be as narrow as possible. In the fourth embodiment, a slight clearance is provided at the height of the LED chip 2. Is set to the distance added.
 第3転写工程を実行することにより、前述したように、第3転写基板105に第2のピッチより広い第4のピッチでX方向、第1のピッチより広い第3のピッチでY方向にLEDチップ2が配列される。第3転写基板105又は第2転写基板4をY方向に第1のピッチ分、つまり、少なくともLEDチップの当該方向(Y方向)における長さ分だけ移動させて第3転写工程を再度実行することにより、Y方向に2種類目のLEDチップ2をライン状に配列することができる。すなわち、第3転写工程において第3転写基板105に既に転写済のライン状のレーザ光の長手方向におけるLEDチップ間に新たなLEDチップ2を配置するように、第3転写工程を再度実行することにより、Y方向に2種類目のLEDチップ2をライン状に配列することができる。さらに、同様に3回目の第3転写工程を実行することにより、Y方向に3種類目のLEDチップ2を1ラインに配列することができる。 By executing the third transfer step, as described above, the LED is applied to the third transfer substrate 105 in the X direction at a fourth pitch wider than the second pitch and in the Y direction at a third pitch wider than the first pitch. Chip 2 is arranged. The third transfer substrate 105 or the second transfer substrate 4 is moved in the Y direction by the first pitch, that is, at least the length of the LED chip in the direction (Y direction), and the third transfer step is executed again. Thus, the second kind of LED chips 2 can be arranged in a line in the Y direction. That is, the third transfer step is executed again so that a new LED chip 2 is arranged between the LED chips in the longitudinal direction of the line-shaped laser light already transferred to the third transfer substrate 105 in the third transfer step. Thus, the second kind of LED chips 2 can be arranged in a line in the Y direction. Furthermore, by executing the third transfer process for the third time in the same manner, the third types of LED chips 2 can be arranged in one line in the Y direction.
 ここで、第3のピッチを第1のピッチの3倍になるように、前述の第2転写工程における第1の速度及び第2の速度を設定しておけば、この3種類のLEDチップ2を配列することにより、Y方向にほぼ隙間のない配列とすることができる。そして、1種類目のLEDチップ2を赤のLEDチップ2(R)とし、2種類目のLEDチップ2を緑のLEDチップ2(G)とし、3種類目のLEDチップ2を青のLEDチップ2(B)とすれば、赤、緑、青の各LEDチップ2を隙間なく配列させることができる(図14参照)。 Here, if the first speed and the second speed in the second transfer step are set so that the third pitch is three times the first pitch, these three types of LED chips 2 are used. By arranging these, it is possible to obtain an arrangement with almost no gap in the Y direction. The first LED chip 2 is a red LED chip 2 (R), the second LED chip 2 is a green LED chip 2 (G), and the third LED chip 2 is a blue LED chip. If 2 (B), the red, green, and blue LED chips 2 can be arranged without gaps (see FIG. 14).
 ここで、第2転写基板4又は第3転写基板105をY方向に第1のピッチ分ずつずらして第3転写工程を再度実行することにより、第2転写基板4に保持されているLEDチップ2が第3転写基板105に既に転写済のLEDチップ2を乗り越えずに脇を通って2種類目のLEDチップ2を第3転写基板105に転写することができる。このため、第2転写基板4と第3転写基板105との隙間をLEDチップ2の高さにわずかなクリアランスを加えた隙間に設定することができ、LEDチップ2の落下時の位置ずれを防止して高精度に安定して転写することができる。 Here, the second transfer substrate 4 or the third transfer substrate 105 is shifted by the first pitch in the Y direction, and the third transfer process is performed again, whereby the LED chip 2 held on the second transfer substrate 4. However, it is possible to transfer the second type LED chip 2 to the third transfer substrate 105 without passing over the LED chip 2 already transferred to the third transfer substrate 105. For this reason, the gap between the second transfer substrate 4 and the third transfer substrate 105 can be set to a gap obtained by adding a slight clearance to the height of the LED chip 2, thereby preventing misalignment when the LED chip 2 is dropped. Thus, it can be stably transferred with high accuracy.
 それでも転写等に失敗して、第3転写基板105に転写した際に、図14に示すようにLEDチップ2の脱落121や位置ずれが発生する場合がある。そういう場合には、リペア工程を実行する。リペア工程は、図16に示すように、キャリア基板1又は第2転写基板4と第3転写基板とを隙間を有して対向させ、真空環境でレーザ光をキャリア基板1又は第2転写基板4に照射して1個ずつLEDチップ2を第3転写基板105に転写してリペアする。もちろん、位置ずれしたLEDチップ2が第3転写基板105上にある場合は、事前にヘッド等により除去しておく。 Still, when the transfer or the like fails and the image is transferred to the third transfer substrate 105, the LED chip 2 may be dropped 121 or displaced as shown in FIG. In such a case, a repair process is performed. In the repair process, as shown in FIG. 16, the carrier substrate 1 or the second transfer substrate 4 and the third transfer substrate are opposed to each other with a gap, and the laser beam is transferred to the carrier substrate 1 or the second transfer substrate 4 in a vacuum environment. The LED chips 2 are transferred to the third transfer substrate 105 and repaired one by one. Of course, if the misaligned LED chip 2 is on the third transfer substrate 105, it is removed in advance by a head or the like.
 このように、第3転写基板105においては、転写層にLEDチップ2が保持されているだけであるから、位置ずれのLEDチップ2を除去しやすい。例えば、実施例2のように回路基板5に実装したLEDチップ2は除去することが困難であるが、実施例4における第3転写基板105上のLEDチップ2は除去しやすくリペア工程の実行に適している。 As described above, in the third transfer substrate 105, since the LED chip 2 is only held in the transfer layer, the misaligned LED chip 2 is easily removed. For example, it is difficult to remove the LED chip 2 mounted on the circuit board 5 as in the second embodiment, but the LED chip 2 on the third transfer substrate 105 in the fourth embodiment is easy to remove, and the repair process is executed. Is suitable.
 次に、リペア後の第3転写基板105に第2の面を保持されたLEDチップ2の第1の面に隙間を有して対向するように第4転写基板106を配置する第4転写基板配置工程を実行する(図15(a)参照)。このとき、実施例4においては、保持したLEDチップ2を下に向けて第3転写基板105を上側に配置し、第4転写基板106を下側に配置する。第4転写基板配置工程は真空環境で実行しても真空環境でなくてもよい。 Next, a fourth transfer substrate in which the fourth transfer substrate 106 is arranged so as to face the first surface of the LED chip 2 having the second surface held by the repaired third transfer substrate 105 with a gap. An arrangement process is executed (see FIG. 15A). At this time, in Example 4, the third transfer substrate 105 is disposed on the upper side with the held LED chip 2 facing downward, and the fourth transfer substrate 106 is disposed on the lower side. The fourth transfer substrate placement step may be executed in a vacuum environment or not in a vacuum environment.
次に、第3転写基板105にライン状のレーザ光を照射することにより第3転写基板105からLEDチップ2を分離して第4転写基板106に向かってLEDチップ2を付勢させ、LEDチップ2の第1の面側を第4転写基板106に転写させる第4転写工程を実行する(図15(a)参照)。転写されたLEDチップ2は第1の面側が第4転写基板106に転写されることでLEDチップ2のバンプは第4転写基板106と反対側、つまり外側を向いている。この第4転写工程は、真空環境で実行する。 Next, the LED chip 2 is separated from the third transfer substrate 105 by irradiating the third transfer substrate 105 with a line-shaped laser beam, and the LED chip 2 is urged toward the fourth transfer substrate 106. A fourth transfer step is performed to transfer the second first surface side to the fourth transfer substrate 106 (see FIG. 15A). The transferred LED chip 2 has its first surface transferred to the fourth transfer substrate 106, so that the bumps of the LED chip 2 face away from the fourth transfer substrate 106, that is, outward. This fourth transfer process is performed in a vacuum environment.
 なお、実施例4においては、第4転写工程を真空環境で実行するように構成したが、必ずしもこれに限定されず、適宜変更可能である。例えば、第3転写基板105に保持されたLEDチップ2の第1の面側を第4転写基板106に接触させた状態で第4転写工程を実行する場合は、付勢時の空気抵抗の影響を受けないので、真空環境ではなく大気圧で実行してもよい。 In the fourth embodiment, the fourth transfer process is executed in a vacuum environment. However, the fourth transfer process is not necessarily limited to this, and can be changed as appropriate. For example, when the fourth transfer process is performed in a state where the first surface side of the LED chip 2 held on the third transfer substrate 105 is in contact with the fourth transfer substrate 106, the influence of the air resistance during energization Therefore, it may be performed at atmospheric pressure instead of a vacuum environment.
 第4転写工程では、X方向に第4のピッチ、Y方向に第1のピッチでRGBの各LEDチップ2が配列されたまま、ライン状のレーザ光照射により1列毎に複数のLEDチップ2を第4転写基板106に転写する。 In the fourth transfer step, a plurality of LED chips 2 are arranged for each column by irradiating the line-shaped laser light while the RGB LED chips 2 are arranged at the fourth pitch in the X direction and the first pitch in the Y direction. Is transferred to the fourth transfer substrate 106.
次に、第4転写基板106に保持されたLEDチップ2の第2の面に隙間を有して対向するように回路基板107を配置する回路基板配置工程を実行する(図15(b)参照)。このとき、実施例4においては、保持したLEDチップ2を下に向けて第4転写基板106を上側に配置し、回路基板107を下側に配置する。回路基板配置工程は真空環境で実行してもよいし真空環境でなくてもよい。 Next, a circuit board arranging step is performed in which the circuit board 107 is arranged so as to face the second surface of the LED chip 2 held on the fourth transfer board 106 with a gap (see FIG. 15B). ). At this time, in Example 4, the fourth transfer substrate 106 is disposed on the upper side with the held LED chip 2 facing downward, and the circuit substrate 107 is disposed on the lower side. The circuit board placement step may be executed in a vacuum environment or not in a vacuum environment.
次に、真空環境にて第2実装工程を実行する(図15(b)参照)。第2実装工程では、第4転写基板106にライン状のレーザ光を照射することにより第4転写基板106からLEDチップ2を分離して回路基板107に向かってLEDチップ2を付勢させ、LEDチップ2の第2の面側を回路基板107に転写させ、LEDチップ2の第2の面に備えたバンプと回路基板107とを接触させて実装する。この後、回路基板107に保持されたLEDチップ2をヘッド等によって加圧し加熱することにより、確実にLEDチップ2のバンプと回路基板107の電極とを接合するように実装してもよい。 Next, the second mounting process is executed in a vacuum environment (see FIG. 15B). In the second mounting step, the LED chip 2 is separated from the fourth transfer substrate 106 by irradiating the fourth transfer substrate 106 with a line-shaped laser beam, and the LED chip 2 is urged toward the circuit substrate 107 to The second surface side of the chip 2 is transferred to the circuit board 107, and the bumps provided on the second surface of the LED chip 2 and the circuit board 107 are brought into contact with each other and mounted. Thereafter, the LED chip 2 held on the circuit board 107 may be pressed and heated by a head or the like, so that the bumps of the LED chip 2 and the electrodes of the circuit board 107 are securely bonded.
 なお、実施例4においては、第2実装工程を真空環境で実行するように構成したが、必ずしもこれに限定されず、適宜変更可能である。例えば、第4転写基板106に保持されたLEDチップ2の第2の面側を回路基板107に接触させた状態で第2実装工程を実行する場合は、付勢時の空気抵抗の影響を受けないので、真空環境ではなく大気圧で実行してもよい。 In the fourth embodiment, the second mounting process is performed in a vacuum environment. However, the second mounting process is not necessarily limited to this and can be changed as appropriate. For example, when the second mounting process is executed in a state where the second surface side of the LED chip 2 held on the fourth transfer substrate 106 is in contact with the circuit substrate 107, the second resistance is affected by air resistance during energization. Since it is not, you may perform by atmospheric pressure instead of a vacuum environment.
 このように、実施例4においては、抜けや位置ずれのあったLEDチップ2のリペアを転写基板上で実行することができ、安定した実装をすることができる。 As described above, in the fourth embodiment, the repair of the LED chip 2 that has been detached or misaligned can be executed on the transfer substrate, and stable mounting can be achieved.
 実施例5は、転写基板に保持されたLEDチップを回路基板に熱圧着した後に当該転写基板を撤去する点で、実施例1~4と異なっている。本発明の実施例5における実装方法について、図17~図22を参照して説明する。図17は、本発明の実施例5における実装方法の第1A転写工程を説明する図である。図18は、本発明の実施例5における実装方法の第1B転写工程を説明する図である。図19は、本発明の実施例5における実装方法の第2転写工程を説明する図である。図20は、本発明の実施例5における実装方法の第3転写工程を説明する図である。図21は、本発明の実施例5における実装方法の熱圧着工程を説明する図である。図22は、本発明の実施例5における実装方法の第3転写基板撤去工程を説明する図である。 Example 5 differs from Examples 1 to 4 in that the LED chip held on the transfer substrate is thermocompression bonded to the circuit board and then the transfer substrate is removed. A mounting method according to the fifth embodiment of the present invention will be described with reference to FIGS. FIG. 17 is a diagram for explaining the 1A transfer process of the mounting method according to the fifth embodiment of the present invention. FIG. 18 is a diagram illustrating the 1B transfer process of the mounting method according to the fifth embodiment of the present invention. FIG. 19 is a diagram illustrating the second transfer process of the mounting method according to the fifth embodiment of the present invention. FIG. 20 is a diagram illustrating a third transfer process of the mounting method according to the fifth embodiment of the present invention. FIG. 21 is a diagram for explaining the thermocompression bonding step of the mounting method according to the fifth embodiment of the present invention. FIG. 22 is a diagram illustrating a third transfer substrate removal step of the mounting method according to the fifth embodiment of the present invention.
(実装方法)
 まず、第1A転写工程を実行して、キャリア基板1からLEDチップ2を分離して第1A転写基板203にLEDチップ2の第2の面側を転写し保持させる。実施例5においては、キャリア基板1にライン状にエキシマレーザからなるレーザ光51を照射し、キャリア基板1又はライン状のレーザ光51のいずれかをX方向に相対移動させてキャリア基板1全体にレーザ光を照射する。そして、サファイヤからなるキャリア基板1におけるGaN層の一部をGaとNに分解させて、LEDチップ2を分離し第1A転写基板203に向かって付勢させるものである。この手法はレーザリフトオフと呼ばれ、分離したLEDチップ2は、GaNが分解されるときにN(窒素)が発生することにより付勢され第1A転写基板203に転写される。
(Mounting method)
First, the first A transfer step is executed to separate the LED chip 2 from the carrier substrate 1 and transfer and hold the second surface side of the LED chip 2 on the first A transfer substrate 203. In the fifth embodiment, the carrier substrate 1 is irradiated with a laser beam 51 made of an excimer laser in a line shape, and either the carrier substrate 1 or the line-shaped laser beam 51 is relatively moved in the X direction to move the entire carrier substrate 1. Irradiate with laser light. Then, a part of the GaN layer in the carrier substrate 1 made of sapphire is decomposed into Ga and N, and the LED chip 2 is separated and urged toward the first A transfer substrate 203. This method is called laser lift-off, and the separated LED chip 2 is energized and transferred to the first A transfer substrate 203 by generating N (nitrogen) when GaN is decomposed.
 図17(a)では、LEDチップ2と第1A転写基板203との間に隙間を設けてレーザ光51を照射しているが、必ずしもこの隙間は必要ではなく、LEDチップ2と第1A転写基板203とが接した状態でレーザ光51を照射するように構成してもよい。この隙間を設けないことで、LEDチップ2が空気抵抗を受けて付勢されたために位置ずれが起こることを防止することができる。また、この第1A転写工程は、真空環境で実行してもよい。真空環境で実行することにより、上述の隙間を設けてもLEDチップ2が付勢されるときに空気抵抗を受けず位置ずれを防止できる。 In FIG. 17A, a gap is provided between the LED chip 2 and the first A transfer substrate 203 to irradiate the laser beam 51. However, this gap is not always necessary, and the LED chip 2 and the first A transfer substrate are not necessarily required. It may be configured to irradiate the laser beam 51 in a state where it is in contact with 203. By not providing this gap, it is possible to prevent the LED chip 2 from being displaced due to being biased by receiving air resistance. The 1A transfer process may be performed in a vacuum environment. By performing the operation in a vacuum environment, even if the above-described gap is provided, it is possible to prevent positional deviation without receiving air resistance when the LED chip 2 is energized.
 第1A転写基板203の表面には、予め図示しない転写層が設けられており、転写されたLEDチップ2は、この転写層により保持されて、図17(b)に示すように第1A転写基板203にLEDチップ2が保持された構成となる。ここで、転写層とは、常温では粘着性があり、熱又は紫外線により固化し、レーザ光を照射することにより分解されてガスを発生する特性を有するものである。つまり、粘着性を有した第1A転写基板203の転写層に向かってLEDチップ2が付勢され、着弾した後、LEDチップ2のもつ熱によって第1A転写基板203の転写層が固化されてLEDチップ2が保持される。LEDチップ2のもつ熱が低ければ、LEDチップ2が着弾した後転写層を加熱してもよい。この時点でLEDチップ2の第2の面におけるバンプは第1A転写基板203と接している。 A transfer layer (not shown) is provided in advance on the surface of the first A transfer substrate 203, and the transferred LED chip 2 is held by this transfer layer, as shown in FIG. The LED chip 2 is held at 203. Here, the transfer layer is sticky at room temperature, has a property of being solidified by heat or ultraviolet light, and being decomposed by irradiation with laser light to generate gas. That is, the LED chip 2 is urged toward the transfer layer of the first A transfer substrate 203 having adhesiveness, and after landing, the transfer layer of the first A transfer substrate 203 is solidified by the heat of the LED chip 2 and the LED Chip 2 is held. If the heat of the LED chip 2 is low, the transfer layer may be heated after the LED chip 2 has landed. At this time, the bump on the second surface of the LED chip 2 is in contact with the first A transfer substrate 203.
次に、第1B転写工程を実行する。図18に示すように、第1A転写基板203をLEDチップ2の第1面が第1B転写基板213と対向するように配置する。そして、第1A転写基板203からLEDチップ2を分離して第1B転写基板213にLEDチップ2の第1の面側を転写し保持させる。実施例5においては、第1A転写基板203にライン状にエキシマレーザからなるレーザ光51を照射し、第1A転写基板203又はライン状のレーザ光51のいずれかをX方向に相対移動させて第1A転写基板203全体にレーザ光を照射する。そして、転写層の粘着力を低減させてLEDチップ2を分離し第1B転写基板213に向かって付勢させ、LEDチップ2の第1の面側が第1B転写基板213に転写される。また、この第1B転写工程は、真空環境で実行してもよい。真空環境で実行することにより、上述の隙間を設けてもLEDチップ2が付勢されるときに空気抵抗を受けず位置ずれを防止できる。この時点でLEDチップ2の第1の面は第1B転写基板213と接している。 Next, the 1B transfer process is performed. As shown in FIG. 18, the first A transfer substrate 203 is arranged so that the first surface of the LED chip 2 faces the first B transfer substrate 213. Then, the LED chip 2 is separated from the first A transfer substrate 203, and the first surface side of the LED chip 2 is transferred and held on the first B transfer substrate 213. In the fifth embodiment, the first A transfer substrate 203 is irradiated with a laser beam 51 made of an excimer laser in a line shape, and either the first A transfer substrate 203 or the line laser beam 51 is relatively moved in the X direction. The entire 1A transfer substrate 203 is irradiated with laser light. Then, the adhesive force of the transfer layer is reduced, the LED chip 2 is separated and biased toward the first B transfer substrate 213, and the first surface side of the LED chip 2 is transferred to the first B transfer substrate 213. The 1B transfer process may be performed in a vacuum environment. By performing the operation in a vacuum environment, even if the above-described gap is provided, it is possible to prevent positional deviation without receiving air resistance when the LED chip 2 is energized. At this time, the first surface of the LED chip 2 is in contact with the first B transfer substrate 213.
 次に、第2転写基板配置工程を実行する。つまり、第1B転写基板213に第1の面を保持されたLEDチップ2の第2の面と隙間を有して対向するように第2転写基板4を配置する。このとき実施例5においては、保持しているLEDチップ2を下に向けて第1B転写基板213を上側に配置し、第2転写基板4を第1B転写基板213の下側に配置する(図19参照)。第2転写基板配置工程は、真空環境で実行してもよいし、必ずしも真空環境でなくてもよい。 Next, a second transfer substrate placement step is executed. That is, the second transfer substrate 4 is disposed so as to face the second surface of the LED chip 2 holding the first surface on the first B transfer substrate 213 with a gap. At this time, in Example 5, the 1B transfer substrate 213 is disposed on the upper side with the LED chip 2 being held facing down, and the second transfer substrate 4 is disposed on the lower side of the first B transfer substrate 213 (see FIG. 19). The second transfer substrate placement step may be performed in a vacuum environment or may not necessarily be a vacuum environment.
続いて第2転写工程を真空環境で実行する。つまり、第1B転写基板213をX方向に第1の速度で移動させ、また、第2転写基板4をX方向に第1の速度より速い第2の速度で移動させる。さらに移動中の第1B転写基板213にレーザ光51をY方向に沿ってライン状に照射し転写層の粘着力を低減させて、第1B転写基板213からY方向における1ライン毎に複数のLEDチップ2を分離する。この際、第1B転写工程と同様に分離したLEDチップ2は第2転写基板4に向かって付勢され、LEDチップ2の第2の面側が転写される。 Subsequently, the second transfer process is performed in a vacuum environment. That is, the first B transfer substrate 213 is moved in the X direction at a first speed, and the second transfer substrate 4 is moved in the X direction at a second speed that is faster than the first speed. Further, the moving 1B transfer substrate 213 is irradiated with laser light 51 in a line along the Y direction to reduce the adhesive force of the transfer layer, and a plurality of LEDs are provided for each line from the 1B transfer substrate 213 in the Y direction. Chip 2 is separated. At this time, the LED chip 2 separated as in the 1B transfer step is urged toward the second transfer substrate 4, and the second surface side of the LED chip 2 is transferred.
 ここで、図19に示すように、第1B転写基板213をX方向に第1の速度で移動させ、第2転写基板4をX方向に第1の速度より速い第2の速度で移動させながら、第1B転写基板213のY方向に沿ってライン状にレーザ光51を照射して1ライン毎に複数のLEDチップ2を分離、第2転写基板4に向かって付勢させることで、第1B転写基板213に第1のピッチでX方向、第2のピッチでY方向に配列されていたLEDチップ2を第2転写基板4に第1のピッチより広い第3のピッチでX方向、第2のピッチでY方向に配列して転写することができる。この第3のピッチは、ディスプレイを構成する回路基板におけるLEDチップのピッチとすることができる。転写されたLEDチップ2は第2の面側が第2転写基板4に転写されることでLEDチップ2のバンプは第2転写基板4側を向いている。 Here, as shown in FIG. 19, the first transfer substrate 213 is moved in the X direction at a first speed, and the second transfer substrate 4 is moved in the X direction at a second speed higher than the first speed. By irradiating the laser beam 51 in a line along the Y direction of the first B transfer substrate 213, the plurality of LED chips 2 are separated for each line and urged toward the second transfer substrate 4, thereby The LED chips 2 arranged on the transfer substrate 213 in the X direction at the first pitch and in the Y direction at the second pitch are arranged on the second transfer substrate 4 in the X direction at a third pitch wider than the first pitch. Can be transferred in the Y direction with a pitch of. This third pitch can be the pitch of the LED chips on the circuit board constituting the display. The second surface side of the transferred LED chip 2 is transferred to the second transfer substrate 4 so that the bumps of the LED chip 2 face the second transfer substrate 4 side.
 第2転写工程を真空環境で実行することで、第1B転写基板213から分離し付勢されるLEDチップ2が空気抵抗を受け位置ずれして第2転写基板4に転写されることを防止できる。さらに、位置ずれを防止するために、第1B転写基板213と第2転写基板4との隙間は、できるだけ狭くすることが望ましく、実施例2においては、LEDチップ2の高さにわずかなクリアランスを加えた距離に設定している。 By performing the second transfer process in a vacuum environment, it is possible to prevent the LED chip 2 separated and energized from the first B transfer substrate 213 from being displaced due to air resistance and being transferred to the second transfer substrate 4. . Furthermore, in order to prevent displacement, it is desirable that the gap between the first B transfer substrate 213 and the second transfer substrate 4 be as narrow as possible. In the second embodiment, a slight clearance is provided at the height of the LED chip 2. The added distance is set.
 なお、実施例5においては、LEDチップ2の転写時に、第1B転写基板213及び第2転写基板4を共にX方向に移動させるように構成したが、必ずしもこれに限定されず、装置の都合により適宜変更可能である。例えば、ライン状のレーザ光51をX方向に沿って照射し、第1B転写基板213及び第2転写基板4をY方向に移動させるように構成してもよい。また、ライン状のレーザ光51をY方向に沿って照射し、第1B転写基板213をX方向、第2転写基板4を-X方向というように、互いに逆方向に移動させるように構成してもよい。すなわち、第1B転写基板213と第2転写基板4とを互いに異なる速度で、ライン状のレーザ光51に対してその直交する方向に相対移動させるように構成すればよい。これによって、第1B転写基板213に保持されていたLEDチップ2を異なるピッチで第2転写基板4に転写することができる。 In the fifth embodiment, the first B transfer substrate 213 and the second transfer substrate 4 are both moved in the X direction when the LED chip 2 is transferred. It can be changed as appropriate. For example, the linear laser beam 51 may be irradiated along the X direction, and the first B transfer substrate 213 and the second transfer substrate 4 may be moved in the Y direction. Further, the linear laser beam 51 is irradiated along the Y direction, and the first B transfer substrate 213 is moved in the X direction and the second transfer substrate 4 is moved in the opposite directions such as the −X direction. Also good. That is, the first B transfer substrate 213 and the second transfer substrate 4 may be configured to move relative to each other in a direction perpendicular to the line-shaped laser light 51 at different speeds. Thereby, the LED chips 2 held on the first B transfer substrate 213 can be transferred to the second transfer substrate 4 at different pitches.
 また、実施例5においては、第1B転写基板213を上側に配置し、第2転写基板4を下側に配置するようにしたが、必ずしもこれに限定されず、配置の都合で適宜変更が可能である。例えば、第1B転写基板213を第1B転写工程のまま下側に配置し、第2転写基板4を上側に配置し、下側の第1B転写基板213から上側の第2転写基板4に向かってLEDチップ2を付勢して転写してもよい。また、第1B転写基板213と第2転写基板4とを隙間を有して対向させてZ方向に沿って立てた状態で第2転写工程を実行してもよい。 In the fifth embodiment, the first B transfer substrate 213 is arranged on the upper side and the second transfer substrate 4 is arranged on the lower side. However, the present invention is not necessarily limited to this, and can be changed as appropriate for the convenience of arrangement. It is. For example, the first B transfer substrate 213 is disposed on the lower side as it is in the first B transfer step, the second transfer substrate 4 is disposed on the upper side, and the lower first B transfer substrate 213 is directed toward the upper second transfer substrate 4. The LED chip 2 may be energized and transferred. Alternatively, the second transfer process may be performed in a state where the first B transfer substrate 213 and the second transfer substrate 4 are opposed to each other with a gap and are set up along the Z direction.
 次に、第2転写基板4をその法線を軸として90°回転させるとともにLEDチップ保持側を下向けにして上側に配置する第2転写基板回転工程を実行する。ここで、第2転写基板4をその法線を軸として90°回転させるとは、つまり、ライン状のレーザ光の長手方向に対して第2転写基板4の向きを90°回転させることをいう。第2転写基板回転工程は、真空環境で実行してもよいし、真空環境でなくてもよい。第2転写基板回転工程を実行することにより、X方向に横長配置だった第2転写基板4は、図20に示すように、第2転写基板4は90°回転し縦長配置となる。 Next, a second transfer substrate rotating step is performed in which the second transfer substrate 4 is rotated by 90 ° about the normal line as an axis, and the LED chip holding side is disposed on the upper side. Here, rotating the second transfer substrate 4 by 90 ° about the normal line as an axis means that the direction of the second transfer substrate 4 is rotated by 90 ° with respect to the longitudinal direction of the line-shaped laser beam. . The second transfer substrate rotation step may be executed in a vacuum environment or may not be in a vacuum environment. By executing the second transfer substrate rotating step, the second transfer substrate 4 that has been arranged horizontally in the X direction is rotated 90 ° and is arranged vertically as shown in FIG.
続いて、第3転写基板配置工程を実行する。つまり、第2転写基板4に第2の面を保持されたLEDチップ2の第1の面と隙間を有して対向するように第3転写基板206を配置する。実施例5においては、保持したLEDチップ2が下を向くように第2転写基板4を上側に、第3転写基板206を下側に配置する(図20参照)。この第3転写基板配置工程も真空環境で実行してもよいが、必ずしも真空環境でなくてもよい。 Subsequently, a third transfer substrate placement step is executed. That is, the third transfer substrate 206 is disposed so as to face the first surface of the LED chip 2 holding the second surface on the second transfer substrate 4 with a gap. In Example 5, the second transfer substrate 4 is disposed on the upper side and the third transfer substrate 206 is disposed on the lower side so that the held LED chip 2 faces downward (see FIG. 20). This third transfer substrate placement step may also be performed in a vacuum environment, but not necessarily in a vacuum environment.
 次に、第3転写工程を真空環境で実行する。つまり、第2転写基板4をX方向に第3の速度で移動させ、また、第3転写基板206をX方向に第3の速度より速い第4の速度で移動させる。さらに移動中の第2転写基板4にレーザ光51をY方向に沿ってライン状に照射し転写層を分解させて第2転写基板4からY方向における1ライン毎に複数のLEDチップ2を分離し、第3転写基板206に向かって付勢させる。そして、LEDチップ2の第1の面側を第3転写基板206に転写させる。このとき、LEDチップ2の第2の面におけるバンプは第3転写基板206側とは反対側の外側を向いている。 Next, the third transfer process is performed in a vacuum environment. That is, the second transfer substrate 4 is moved in the X direction at a third speed, and the third transfer substrate 206 is moved in the X direction at a fourth speed that is faster than the third speed. Further, the moving second transfer substrate 4 is irradiated with laser light 51 in a line along the Y direction to decompose the transfer layer, and the plurality of LED chips 2 are separated from the second transfer substrate 4 for each line in the Y direction. Then, it is biased toward the third transfer substrate 206. Then, the first surface side of the LED chip 2 is transferred to the third transfer substrate 206. At this time, the bump on the second surface of the LED chip 2 faces the outer side opposite to the third transfer substrate 206 side.
 ここで、図20に示すように、第2転写基板4をX方向に第3の速度で移動させ、回路基板5をX方向に第3の速度より速い第4の速度で移動させながら、第2転写基板4のY方向にライン状にレーザ光51を照射して1ライン毎に複数のLEDチップ2を分離、付勢させることで、第2転写基板回転工程で90°回転済の第2転写基板4に第2のピッチでX方向、第3のピッチでY方向に配列されていたLEDチップ2を、第3転写基板206に第2のピッチより広い第4のピッチでX方向、第3のピッチでY方向に配列して転写することができる。この第3のピッチ及び第4のピッチは、ディスプレイを構成する回路基板におけるLEDチップのピッチとすることができる。 Here, as shown in FIG. 20, the second transfer substrate 4 is moved in the X direction at a third speed, and the circuit board 5 is moved in the X direction at a fourth speed higher than the third speed. 2 The laser light 51 is irradiated in a line in the Y direction of the transfer substrate 4 to separate and energize the plurality of LED chips 2 for each line, thereby rotating the second transfer substrate rotated step by 90 °. The LED chips 2 arranged on the transfer substrate 4 in the X direction at the second pitch and in the Y direction at the third pitch are arranged on the third transfer substrate 206 in the X direction and at the fourth pitch wider than the second pitch. It is possible to transfer images arranged in the Y direction at a pitch of 3. The third pitch and the fourth pitch can be the pitch of the LED chips on the circuit board constituting the display.
 なお、実施例5においては、第2転写基板回転工程を実行して図20に示すように、第2転写基板4を縦長配置、第3転写基板206を横長配置にして第3転写工程を実行するように構成したが、必ずしもこれに限定されず、装置等の都合により適宜変更が可能である。例えば、第2転写基板回転工程を実行せず、第2転写基板4を横長配置のままで、ライン状のレーザ光の長手方向を90°回転させるとともに、第3転写基板206を縦長配置として第3転写基板配置工程及び第3転写工程を実行するように構成してもよい。つまり、ライン状のレーザ光の長手方向に対して第2転写基板4の向きを90°回転すればよい。 In Example 5, the second transfer substrate rotating step is executed, and the third transfer step is executed with the second transfer substrate 4 arranged in a vertically long position and the third transfer substrate 206 arranged in a horizontally long shape as shown in FIG. However, the present invention is not necessarily limited to this, and can be appropriately changed depending on the convenience of the apparatus. For example, the second transfer substrate rotating step is not executed, the longitudinal direction of the line-shaped laser light is rotated by 90 ° while the second transfer substrate 4 is kept in the horizontally long arrangement, and the third transfer substrate 206 is arranged in the vertically long arrangement. You may comprise so that a 3 transcription | transfer board | substrate arrangement | positioning process and a 3rd transcription | transfer process may be performed. That is, the direction of the second transfer substrate 4 may be rotated by 90 ° with respect to the longitudinal direction of the line-shaped laser beam.
 また、第3転写工程は、上述したように真空環境で実行される。真空環境で第3転写工程を実行することで、第2転写基板4から分離し付勢されるLEDチップ2が空気抵抗を受け位置ずれして第3転写基板206に転写されることを防止できる。また、位置ずれをより防止するために、第2転写基板4と第3転写基板206との隙間は、できるだけ狭くすることが望ましく、実施例5においては、LEDチップ2の高さにわずかなクリアランスを加えた距離に設定している。 In addition, the third transfer process is performed in a vacuum environment as described above. By performing the third transfer process in a vacuum environment, it is possible to prevent the LED chip 2 separated and energized from the second transfer substrate 4 from receiving the air resistance and being displaced and transferred to the third transfer substrate 206. . Further, in order to further prevent the displacement, it is desirable that the gap between the second transfer substrate 4 and the third transfer substrate 206 be as narrow as possible. In the fifth embodiment, a slight clearance is provided at the height of the LED chip 2. Is set to the distance added.
 第3転写基板206の表面には、図示しない転写層が設けられている。第2転写基板4から分離したLEDチップ2は付勢力で第3転写基板206の表面に設けられた転写層に転写される。ここで、上述したように転写層とは、常温では粘着性があり、熱又は紫外線により固化し、レーザ光を照射することにより分解されてガスを発生する特性を有するものである。つまり、レーザ光により第2転写基板4の転写層が分解されてガスが発生し付勢力が発生して、粘着性を有した第3転写基板206の転写層に向かってLEDチップ2が付勢され、着弾した後、第3転写基板206の転写層がLEDチップ2のもつ熱によって固化されて保持される。なお、LEDチップ2のもつ熱が低ければ、LEDチップ2が着弾した後転写層を加熱してもよい。 A transfer layer (not shown) is provided on the surface of the third transfer substrate 206. The LED chip 2 separated from the second transfer substrate 4 is transferred to a transfer layer provided on the surface of the third transfer substrate 206 by an urging force. Here, as described above, the transfer layer is sticky at room temperature, has a property of being solidified by heat or ultraviolet light, and being decomposed by irradiation with laser light to generate gas. That is, the transfer layer of the second transfer substrate 4 is decomposed by the laser beam to generate gas and generate a biasing force, and the LED chip 2 is biased toward the transfer layer of the third transfer substrate 206 having adhesiveness. After landing, the transfer layer of the third transfer substrate 206 is solidified and held by the heat of the LED chip 2. If the heat of the LED chip 2 is low, the transfer layer may be heated after the LED chip 2 has landed.
 次に、熱圧着工程を実行して第3転写基板206に第1の面側を保持されたLEDチップ2の第2の面側を回路基板205に接合する。すなわち、図21に示すように、回路基板205を被転写基板保持部55に位置決めして固定し、この回路基板205の電極に対向するように第3転写基板206に第1面側を保持されたLEDチップ2の第2面側におけるバンプを位置決めして重ねる。そして、熱圧着ヘッド262で第3転写基板206のLEDチップ2保持側と反対側から加熱しながら第3転写基板206、LEDチップ2、及び回路基板205を押圧するとともに、被転写基板保持部55を加熱する。このとき、熱圧着ヘッド262と被転写基板保持部55の加熱温度は、熱膨張や熱収縮の影響により実装位置にずれが生じさせないために同じ温度となるように制御する。この温度は、およそ150℃程度が望ましい。そして、LEDチップ2の第2の面におけるバンプは回路基板205側を向いており、その結果、回路基板205の電極に接合されることとなる。 Next, a second surface side of the LED chip 2 having the first surface side held by the third transfer substrate 206 is bonded to the circuit substrate 205 by performing a thermocompression bonding process. That is, as shown in FIG. 21, the circuit board 205 is positioned and fixed to the transfer substrate holding portion 55, and the first surface side is held by the third transfer board 206 so as to face the electrodes of the circuit board 205. The bumps on the second surface side of the LED chip 2 are positioned and overlapped. Then, the third transfer substrate 206, the LED chip 2, and the circuit substrate 205 are pressed while being heated from the opposite side of the third transfer substrate 206 to the LED chip 2 holding side by the thermocompression bonding head 262, and the transferred substrate holding portion 55 is pressed. Heat. At this time, the heating temperature of the thermocompression bonding head 262 and the transferred substrate holding portion 55 is controlled so as to be the same temperature so as not to cause a shift in the mounting position due to the effects of thermal expansion and contraction. This temperature is preferably about 150 ° C. The bumps on the second surface of the LED chip 2 face the circuit board 205 side, and as a result, are joined to the electrodes of the circuit board 205.
 最後に、第3転写基板撤去工程を実行して、LEDチップ2から第3転写基板206を撤去して実装を完了する。すなわち、図22に示すように、第3転写基板206にライン状にエキシマレーザからなるレーザ光51を照射し、第3転写基板206及び回路基板205、又はライン状のレーザ光51のいずれかをX方向に相対移動させて第3転写基板206全体にレーザ光を照射する。そして、転写層の粘着力を低減させて第3転写基板206を撤去する。この撤去に際しては、熱圧着ヘッド262によって第3転写基板206を吸着して撤去することができる。そして、LEDチップ2の第2の面におけるバンプは回路基板205に確実に接合されており、実装が完了する。 Finally, a third transfer substrate removal step is executed to remove the third transfer substrate 206 from the LED chip 2 and complete the mounting. That is, as shown in FIG. 22, the third transfer substrate 206 is irradiated with a laser beam 51 made of an excimer laser in a line shape, and any one of the third transfer substrate 206 and the circuit substrate 205 or the line-shaped laser beam 51 is irradiated. The entire third transfer substrate 206 is irradiated with laser light by being relatively moved in the X direction. Then, the third transfer substrate 206 is removed while reducing the adhesive strength of the transfer layer. In this removal, the third transfer substrate 206 can be adsorbed and removed by the thermocompression bonding head 262. The bumps on the second surface of the LED chip 2 are securely bonded to the circuit board 205, and the mounting is completed.
これにより、LEDチップ2を任意のピッチで回路基板205に実装することができる。特に、実施例5においては、熱圧着工程でLEDチップ2を回路基板205に接合してから、LEDチップ2を保持している第3転写基板206を撤去することにより、LEDチップ2の位置ずれを防止することができ、高精度な実装を実現できる。 Thereby, the LED chip 2 can be mounted on the circuit board 205 at an arbitrary pitch. In particular, in Example 5, the LED chip 2 is bonded to the circuit board 205 in the thermocompression bonding process, and then the third transfer substrate 206 holding the LED chip 2 is removed, thereby shifting the position of the LED chip 2. Can be prevented and high-precision mounting can be realized.
 なお、実施例5においては、第3転写基板206にレーザ光51を照射して、転写層の粘着力を低減させて第3転写基板206を撤去するようにしたが、必ずしもこれに限定されず適宜変更が可能である。例えば、第3転写基板206の転写層として加熱によって粘着力が低減するものを採用し、熱圧着工程において、熱圧着ヘッド262が第3転写基板206を加熱した際に、この加熱によって第3転写基板206の転写層の粘着力を低減させ、第3転写基板撤去工程においては、単に熱圧着ヘッド262によって第3転写基板206を吸着して撤去するように構成してもよい。この場合は、熱圧着工程までは、第3転写基板206を加熱しないようにする。 In the fifth embodiment, the third transfer substrate 206 is irradiated with the laser beam 51 to reduce the adhesive force of the transfer layer and the third transfer substrate 206 is removed. However, the present invention is not limited to this. Changes can be made as appropriate. For example, a layer whose adhesive strength is reduced by heating is adopted as the transfer layer of the third transfer substrate 206. When the thermocompression bonding head 262 heats the third transfer substrate 206 in the thermocompression bonding process, the third transfer substrate is transferred by this heating. The adhesive force of the transfer layer of the substrate 206 may be reduced, and the third transfer substrate 206 may be simply adsorbed and removed by the thermocompression bonding head 262 in the third transfer substrate removal step. In this case, the third transfer substrate 206 is not heated until the thermocompression bonding step.
 第3転写工程、熱圧着工程、及び第3転写基板撤去工程を実行することにより、前述したように、回路基板205に第2のピッチより広い第4のピッチでX方向、第1のピッチより広い第3のピッチでY方向にLEDチップ2が配列される。回路基板205又は第2転写基板4をY方向に第1のピッチ分、つまり、少なくともY方向におけるLEDチップ2の長さ分の距離ずらして、第3転写工程、熱圧着工程、及び第3転写基板撤去工程を再度実行することにより、Y方向に2種類目のLEDチップ2をライン状に配列することができる。すなわち、回路基板205に既に転写済のライン状のレーザ光の長手方向におけるLEDチップ間に新たなLEDチップを配置するように、第3転写工程、熱圧着工程、及び第3転写基板撤去工程を再度実行することにより、Y方向に2種類目のLEDチップ2をライン状に配列することができる。さらに、同様に3回目の第3転写工程、熱圧着工程、及び第3転写基板撤去工程を実行することにより、Y方向に3種類目のLEDチップ2を1ラインに配列することができる。 By executing the third transfer process, the thermocompression bonding process, and the third transfer substrate removal process, as described above, the circuit board 205 is formed with the fourth pitch wider than the second pitch in the X direction and the first pitch. The LED chips 2 are arranged in the Y direction at a wide third pitch. The circuit board 205 or the second transfer board 4 is shifted in the Y direction by a distance corresponding to the first pitch, that is, at least the length of the LED chip 2 in the Y direction, and the third transfer process, the thermocompression bonding process, and the third transfer. By executing the substrate removal step again, the second types of LED chips 2 can be arranged in a line in the Y direction. That is, the third transfer step, the thermocompression bonding step, and the third transfer substrate removal step are performed so that a new LED chip is disposed between the LED chips in the longitudinal direction of the line-shaped laser light that has already been transferred to the circuit board 205. By executing again, the second kind of LED chips 2 can be arranged in a line in the Y direction. Furthermore, similarly, by executing the third transfer process, the thermocompression bonding process, and the third transfer substrate removal process for the third time, the third types of LED chips 2 can be arranged in one line in the Y direction.
ここで、第3のピッチを第1のピッチの3倍になるように、前述の第2転写工程における第1の速度及び第2の速度を設定しておけば、3種類のLEDチップ2を配列することにより、Y方向にほぼ隙間のない配列とすることができる。そして、1種類目のLEDチップ2を赤のLEDチップ2(R)とし、2種類目のLEDチップ2を緑のLEDチップ2(G)とし、3種類目のLEDチップ2を青のLEDチップ2(B)とすれば、赤、緑、青の各LEDチップ2を隙間なく配列させることができる。 Here, if the first speed and the second speed in the second transfer step are set so that the third pitch is three times the first pitch, three types of LED chips 2 can be obtained. By arranging them, it is possible to obtain an arrangement with almost no gap in the Y direction. The first LED chip 2 is a red LED chip 2 (R), the second LED chip 2 is a green LED chip 2 (G), and the third LED chip 2 is a blue LED chip. If 2 (B), the red, green and blue LED chips 2 can be arranged without gaps.
(実装装置)
本発明の実施例5における実装装置250は、図9を用いて説明した実装装置150と同様の構成を備えているが、上述した熱圧着工程及び第3転写基板撤去工程を実行するために被転写基板保持部55は加熱機構を有している点、及びLEDチップを加圧、加熱することが可能な熱圧着ヘッド262(図21参照)を備えている点で、実装装置150と異なっている。そして、実施例5においては、第1A転写工程から第3転写基板撤去工程までの各工程を1台の実装装置250により実行することができる。
(Mounting device)
The mounting apparatus 250 according to the fifth embodiment of the present invention has the same configuration as that of the mounting apparatus 150 described with reference to FIG. 9, but in order to perform the above-described thermocompression bonding process and third transfer substrate removal process. The transfer substrate holding part 55 is different from the mounting apparatus 150 in that it has a heating mechanism and a thermocompression bonding head 262 (see FIG. 21) that can pressurize and heat the LED chip. Yes. In the fifth embodiment, each process from the first A transfer process to the third transfer substrate removal process can be executed by one mounting apparatus 250.
 前述した熱圧着工程においては、熱圧着ヘッド262の温度と被転写基板保持部55の温度とを同じ加熱温度にするように図示しない制御部が制御して、第3転写基板206が保持したままLEDチップ2と回路基板205と押圧する。加熱温度はおよそ150℃が望ましい。また、第3転写基板撤去工程においては、レーザ光51を第3転写基板206全面に照射して転写層の粘着力を低減させた後、熱圧着ヘッド262が第3転写基板206を吸着してLEDチップ2から分離して撤去する。 In the above-described thermocompression bonding process, the control unit (not shown) controls the temperature of the thermocompression bonding head 262 and the temperature of the transfer substrate holding unit 55 to the same heating temperature, and the third transfer substrate 206 is held. The LED chip 2 and the circuit board 205 are pressed. The heating temperature is preferably about 150 ° C. In the third transfer substrate removal step, the entire surface of the third transfer substrate 206 is irradiated with laser light 51 to reduce the adhesive force of the transfer layer, and then the thermocompression bonding head 262 adsorbs the third transfer substrate 206. Separated from the LED chip 2 and removed.
なお、実施例5においては、1台の実装装置150によって、各工程を実行する構成としたが、必ずしもこれに限定されず、都合により適宜変更が可能である。例えば、実装装置250を3台並べて、第1A転写工程、第1B転写工程、第2転写工程、第3転写工程、及び熱転写工程・第3転写基板撤去工程を各実装装置250で実行するように構成してもよい。この場合、各実装装置250間は、ロボット等で構成される図示しない搬送部により各基板を配置又は回転させる構成とすればよい。また、熱転写工程・第3転写基板撤去工程のみを別の実装装置250で実行するように構成してもよい。 In addition, in Example 5, although it was set as the structure which performs each process with the one mounting apparatus 150, it is not necessarily limited to this, It can change suitably for convenience. For example, three mounting apparatuses 250 are arranged side by side so that each mounting apparatus 250 performs the first A transfer process, the first B transfer process, the second transfer process, the third transfer process, and the thermal transfer process / third transfer substrate removal process. It may be configured. In this case, between each mounting apparatus 250, what is necessary is just to set it as the structure which arrange | positions or rotates each board | substrate by the conveyance part which is comprised with a robot etc. which is not shown in figure. Alternatively, only the thermal transfer process and the third transfer substrate removal process may be executed by another mounting apparatus 250.
 このように、実施例5においては、キャリア基板に第1の面を保持されたダイシング後のLEDチップを回路基板に実装する実装方法であって、
前記キャリア基板から前記LEDチップを分離して第1A転写基板に前記LEDチップの前記第1の面と反対側の第2の面側を転写して保持させる第1A転写工程と、
前記第1A転写基板から前記LEDチップを分離して第1B転写基板に前記LEDチップの前記第1の面側を転写して保持させる第1B転写工程と、
前記第1B転写基板に前記第1の面を保持された前記LEDチップの前記第2の面と隙間を有して対向するように第2転写基板を配置する第2転写基板配置工程と、
前記第1B転写基板にライン状のレーザ光を照射して1ライン分の複数の前記LEDチップを前記第1B転写基板から分離し前記第2転写基板に向かって付勢させるとともに、前記第1B転写基板と前記第2転写基板とを互いに異なる速度で、前記ライン状のレーザ光に対してその直交する方向に相対移動させて、前記LEDチップの第2の面側を前記第2転写基板に転写する第2転写工程と、
前記ライン状のレーザ光に対して、前記第2転写基板をその法線を軸として90°回転させて前記第2転写基板を配置する第2転写基板回転工程と、
前記第2転写基板に前記第2の面を保持された前記LEDチップの前記第1の面と隙間を有して対向するように第3転写基板を配置する第3転写基板配置工程と、
前記第2転写基板にライン状のレーザ光を照射して1ライン分の複数の前記LEDチップを前記第2転写基板から分離し前記第3転写基板に向かって付勢させるとともに、前記第2転写基板と前記第3転写基板とを互いに異なる速度で、前記ライン状のレーザ光に対してその直交する方向に相対移動させて、前記LEDチップの第1の面側を前記第3転写基板に転写する第3転写工程と、
前記第3転写基板に前記第1の面を保持された前記LEDチップの第2の面におけるバンプを回路基板の電極に対向させて熱圧着する熱圧着工程と、
前記LEDチップの前記第1の面を前記第3転写基板から分離して前記第3転写基板を撤去する第3転写基板撤去工程と、を備え、
少なくとも前記第2転写工程、及び前記第3転写工程を真空環境で実行することを特徴とする実装方法により、転写時の空気抵抗の影響を排除して、高精度にLEDチップを転写し実装することができる。また、熱圧着工程を実施することによりLEDチップを回路基板に確実に接合でき、高精度な実装を実現できる。
Thus, in Example 5, the mounting method of mounting the LED chip after dicing with the first surface held by the carrier substrate on the circuit board,
A first A transfer step of separating the LED chip from the carrier substrate and transferring and holding a second surface side opposite to the first surface of the LED chip on a first A transfer substrate;
A first B transfer step of separating the LED chip from the first A transfer substrate and transferring and holding the first surface side of the LED chip on the first B transfer substrate;
A second transfer substrate disposing step of disposing a second transfer substrate so as to face the second surface of the LED chip holding the first surface on the first B transfer substrate with a gap;
The first B transfer substrate is irradiated with a line-shaped laser beam to separate a plurality of LED chips for one line from the first B transfer substrate and urge toward the second transfer substrate, and the first B transfer The second surface of the LED chip is transferred to the second transfer substrate by moving the substrate and the second transfer substrate at different speeds in a direction perpendicular to the line-shaped laser beam. A second transfer step,
A second transfer substrate rotating step of disposing the second transfer substrate by rotating the second transfer substrate by 90 ° about the normal line with respect to the line-shaped laser beam;
A third transfer substrate disposing step of disposing a third transfer substrate so as to face the first surface of the LED chip holding the second surface on the second transfer substrate with a gap;
The second transfer substrate is irradiated with a line-shaped laser beam to separate the plurality of LED chips for one line from the second transfer substrate and urge toward the third transfer substrate, and the second transfer The first surface side of the LED chip is transferred to the third transfer substrate by moving the substrate and the third transfer substrate at different speeds relative to each other in the direction perpendicular to the line-shaped laser beam. A third transfer step,
A thermocompression bonding step in which the bumps on the second surface of the LED chip holding the first surface on the third transfer substrate are thermocompression bonded to the electrodes of the circuit substrate;
A third transfer substrate removing step of separating the first surface of the LED chip from the third transfer substrate and removing the third transfer substrate;
At least the second transfer step and the third transfer step are performed in a vacuum environment, and the effect of air resistance during transfer is eliminated and the LED chip is transferred and mounted with high accuracy. be able to. Further, by performing the thermocompression bonding process, the LED chip can be reliably bonded to the circuit board, and high-precision mounting can be realized.
 また、実施例5においては、前記被転写基板保持部に保持された前記回路基板に前記LEDチップを熱圧着する熱圧着ヘッドを備えるとともに、前記被転写基板保持部は保持した前記被転写基板又は前記回路基板を加熱する加熱機構を備え、
前記制御部は、前記熱圧着ヘッドと前記被転写基板保持部とを同じ温度になるように加熱して前記LEDチップを前記回路基板に熱圧着するように制御するように実装装置を構成したことにより、熱膨張や熱収縮の影響により実装位置にずれを生じさせることなく、高精度な実装を実現できる。
In Example 5, the circuit board held by the transferred substrate holding part includes a thermocompression bonding head for thermocompression bonding the LED chip, and the transferred substrate holding part holds the transferred substrate or A heating mechanism for heating the circuit board;
The mounting unit is configured to control the LED chip to be thermocompression bonded to the circuit board by heating the thermocompression bonding head and the transfer substrate holding part to the same temperature. Thus, it is possible to realize highly accurate mounting without causing a shift in the mounting position due to the effects of thermal expansion and contraction.
本発明における転写方法、実装方法、転写装置、及び実装装置は、転写時の空気抵抗の影響を排除して、高精度にLEDチップを転写、実装する分野に広く用いることができる。 The transfer method, mounting method, transfer device, and mounting device in the present invention can be widely used in the field of transferring and mounting LED chips with high accuracy by eliminating the influence of air resistance during transfer.
1:キャリア基板  2:LEDチップ  3:第1転写基板  4:第2転写基板
5:回路基板  50:転写装置  51:レーザ光  52:レーザ光射部
53:カメラ  54:転写基板保持部  55:被転写基板保持部
56:グラインダ  105:第3転写基板  106:第4転写基板
107:回路基板  121:脱落  150:実装装置
203:第1A転写基板  205:回路基板  206:第3転写基板  
213:第1B転写基板  262:熱圧着ヘッド
1: Carrier substrate 2: LED chip 3: First transfer substrate 4: Second transfer substrate 5: Circuit substrate 50: Transfer device 51: Laser beam 52: Laser beam irradiation unit 53: Camera 54: Transfer substrate holding unit 55: Covered Transfer substrate holding part 56: Grinder 105: Third transfer substrate 106: Fourth transfer substrate 107: Circuit substrate 121: Dropping 150: Mounting device 203: First A transfer substrate 205: Circuit substrate 206: Third transfer substrate
213: First B transfer substrate 262: Thermocompression bonding head

Claims (7)

  1.  転写基板に一方の面を保持されたLEDチップを被転写基板に転写する転写方法であって、
    前記LEDチップの前記一方の面の反対側の面に隙間を有して対向するように前記被転写基板を配置する被転写基板配置工程と、
    前記転写基板にレーザ光を照射することにより、前記LEDチップを前記転写基板から分離するとともに前記被転写基板に向かって付勢させて前記被転写基板に転写する転写工程と、を備え、
    少なくとも前記転写工程を真空環境で実行することを特徴とする転写方法。
    A transfer method for transferring an LED chip having one surface held by a transfer substrate to a transfer substrate,
    A transferred substrate placement step of placing the transferred substrate so as to face the surface opposite to the one surface of the LED chip with a gap;
    A transfer step of separating the LED chip from the transfer substrate by irradiating the transfer substrate with a laser beam and urging the LED chip toward the transfer substrate to transfer the LED chip to the transfer substrate;
    At least the transfer step is performed in a vacuum environment.
  2.  キャリア基板に第1の面を保持されたダイシング後のLEDチップを回路基板に実装する実装方法であって、
    前記キャリア基板から前記LEDチップを分離して第1転写基板に前記LEDチップの前記第1の面と反対側の第2の面側を転写して保持させる第1転写工程と、
    前記第1転写基板に前記第2の面を保持された前記LEDチップの前記第1の面と隙間を有して対向するように第2転写基板を配置する第2転写基板配置工程と、
    前記第1転写基板にライン状のレーザ光を照射して1ライン分の複数の前記LEDチップを前記第1転写基板から分離し前記第2転写基板に向かって付勢させるとともに、前記第1転写基板と前記第2転写基板とを互いに異なる速度で、前記ライン状のレーザ光に対してその直交する方向に相対移動させて、前記LEDチップの第1の面側を前記第2転写基板に転写する第2転写工程と、
    前記ライン状のレーザ光に対して、前記第2転写基板をその法線を軸として90°回転させて前記第2転写基板を配置する第2転写基板回転工程と、
    前記第2転写基板に前記第1の面を保持された前記LEDチップの前記第2の面と隙間を有して対向するように前記回路基板を配置する回路基板配置工程と、
    前記第2転写基板にライン状のレーザ光を照射して1ライン分の複数の前記LEDチップを前記第2転写基板から分離し前記回路基板に向かって付勢させるとともに、前記第2転写基板と前記回路基板とを互いに異なる速度で、前記ライン状のレーザ光に対してその直交する方向に相対移動させて、前記LEDチップの第2の面側を前記回路基板に転写することにより前記LEDチップのバンプと前記回路基板の電極とを接合させる第1実装工程と、を備え、
    少なくとも前記第2転写工程、及び前記第1実装工程を真空環境で実行することを特徴とする実装方法。
    A mounting method for mounting an LED chip after dicing with a first surface held on a carrier substrate on a circuit board,
    A first transfer step of separating the LED chip from the carrier substrate and transferring and holding a second surface side opposite to the first surface of the LED chip to the first transfer substrate;
    A second transfer substrate disposing step of disposing a second transfer substrate so as to face the first surface of the LED chip holding the second surface on the first transfer substrate with a gap;
    The first transfer substrate is irradiated with a line-shaped laser beam to separate a plurality of LED chips for one line from the first transfer substrate and urge the LED chips toward the second transfer substrate, and the first transfer The substrate and the second transfer substrate are moved relative to each other in a direction perpendicular to the line-shaped laser light at different speeds, and the first surface side of the LED chip is transferred to the second transfer substrate. A second transfer step,
    A second transfer substrate rotating step of disposing the second transfer substrate by rotating the second transfer substrate by 90 ° about the normal line with respect to the line-shaped laser beam;
    A circuit board disposing step of disposing the circuit board so as to face the second surface of the LED chip holding the first surface on the second transfer substrate with a gap;
    A plurality of LED chips for one line are separated from the second transfer substrate by irradiating the second transfer substrate with a line-shaped laser beam and urged toward the circuit board, and the second transfer substrate and The LED chip is transferred by moving the circuit board relative to the line-shaped laser light at different speeds in a direction perpendicular to the circuit board, and transferring the second surface side of the LED chip to the circuit board. A first mounting step of bonding the bump of the circuit board and the electrode of the circuit board,
    A mounting method comprising performing at least the second transfer step and the first mounting step in a vacuum environment.
  3.  前記第1実装工程において前記回路基板に既に転写済の前記ライン状のレーザ光の長手方向におけるLEDチップ間に新たなLEDチップを配置するように、前記第1実装工程を再度実行することを特徴とする請求項2に記載の実装方法。 In the first mounting step, the first mounting step is performed again so that a new LED chip is arranged between the LED chips in the longitudinal direction of the line-shaped laser light already transferred to the circuit board. The mounting method according to claim 2.
  4.  キャリア基板に第1の面を保持されたダイシング後のLEDチップを回路基板に実装する実装方法であって、
    前記キャリア基板から前記LEDチップを分離して第1A転写基板に前記LEDチップの前記第1の面と反対側の第2の面側を転写して保持させる第1A転写工程と、
    前記第1A転写基板から前記LEDチップを分離して第1B転写基板に前記LEDチップの前記第1の面側を転写して保持させる第1B転写工程と、
    前記第1B転写基板に前記第1の面を保持された前記LEDチップの前記第2の面と隙間を有して対向するように第2転写基板を配置する第2転写基板配置工程と、
    前記第1B転写基板にライン状のレーザ光を照射して1ライン分の複数の前記LEDチップを前記第1B転写基板から分離し前記第2転写基板に向かって付勢させるとともに、前記第1B転写基板と前記第2転写基板とを互いに異なる速度で、前記ライン状のレーザ光に対してその直交する方向に相対移動させて、前記LEDチップの第2の面側を前記第2転写基板に転写する第2転写工程と、
    前記ライン状のレーザ光に対して、前記第2転写基板をその法線を軸として90°回転させて前記第2転写基板を配置する第2転写基板回転工程と、
    前記第2転写基板に前記第2の面を保持された前記LEDチップの前記第1の面と隙間を有して対向するように第3転写基板を配置する第3転写基板配置工程と、
    前記第2転写基板にライン状のレーザ光を照射して1ライン分の複数の前記LEDチップを前記第2転写基板から分離し前記第3転写基板に向かって付勢させるとともに、前記第2転写基板と前記第3転写基板とを互いに異なる速度で、前記ライン状のレーザ光に対してその直交する方向に相対移動させて、前記LEDチップの第1の面側を前記第3転写基板に転写する第3転写工程と、
    前記第3転写基板に前記第1の面を保持された前記LEDチップの第2の面におけるバンプを回路基板の電極に対向させて熱圧着する熱圧着工程と、
    前記LEDチップの前記第1の面を前記第3転写基板から分離して前記第3転写基板を撤去する第3転写基板撤去工程と、を備え、
    少なくとも前記第2転写工程、及び前記第3転写工程を真空環境で実行することを特徴とする実装方法。
    A mounting method for mounting an LED chip after dicing with a first surface held on a carrier substrate on a circuit board,
    A first A transfer step of separating the LED chip from the carrier substrate and transferring and holding a second surface side opposite to the first surface of the LED chip on a first A transfer substrate;
    A first B transfer step of separating the LED chip from the first A transfer substrate and transferring and holding the first surface side of the LED chip on the first B transfer substrate;
    A second transfer substrate disposing step of disposing a second transfer substrate so as to face the second surface of the LED chip holding the first surface on the first B transfer substrate with a gap;
    The first B transfer substrate is irradiated with a line-shaped laser beam to separate a plurality of LED chips for one line from the first B transfer substrate and urge toward the second transfer substrate, and the first B transfer The second surface of the LED chip is transferred to the second transfer substrate by moving the substrate and the second transfer substrate at different speeds in a direction perpendicular to the line-shaped laser beam. A second transfer step,
    A second transfer substrate rotating step of disposing the second transfer substrate by rotating the second transfer substrate by 90 ° about the normal line with respect to the line-shaped laser beam;
    A third transfer substrate disposing step of disposing a third transfer substrate so as to face the first surface of the LED chip holding the second surface on the second transfer substrate with a gap;
    The second transfer substrate is irradiated with a line-shaped laser beam to separate the plurality of LED chips for one line from the second transfer substrate and urge toward the third transfer substrate, and the second transfer The first surface side of the LED chip is transferred to the third transfer substrate by moving the substrate and the third transfer substrate at different speeds relative to each other in the direction perpendicular to the line-shaped laser beam. A third transfer step,
    A thermocompression bonding step in which the bumps on the second surface of the LED chip holding the first surface on the third transfer substrate are thermocompression bonded to the electrodes of the circuit substrate;
    A third transfer substrate removing step of separating the first surface of the LED chip from the third transfer substrate and removing the third transfer substrate;
    A mounting method comprising performing at least the second transfer step and the third transfer step in a vacuum environment.
  5.  転写基板に保持されたLEDチップを被転写基板に転写させる転写装置であって、
    前記転写装置内を真空環境にする真空化部と、
    前記転写基板にレーザ光を照射するレーザ光照射部と、
    前記転写基板を保持し、第1方向に移動可能な転写基板保持部と、
    前記転写基板に保持された前記LEDチップと隙間を有して対向するように前記被転写基板を保持し、少なくとも前記第1方向に移動可能な被転写基板保持部と、
    前記転写基板から前記LEDチップを分離し前記被転写基板に向かって付勢して転写するように前記レーザ光照射部、前記転写基板保持部、及び前記被転写基板保持部を制御する制御部と、
    を備えたことを特徴とする転写装置。
    A transfer device for transferring an LED chip held on a transfer substrate to a transfer substrate,
    A evacuation unit for creating a vacuum environment in the transfer device;
    A laser beam irradiation unit for irradiating the transfer substrate with a laser beam;
    A transfer substrate holding unit that holds the transfer substrate and is movable in a first direction;
    A transfer substrate holding portion that holds the transfer substrate so as to face the LED chip held on the transfer substrate with a gap, and is movable at least in the first direction;
    A control unit for controlling the laser beam irradiation unit, the transfer substrate holding unit, and the transferred substrate holding unit so as to separate the LED chip from the transfer substrate and urge and transfer the LED chip toward the transferred substrate; ,
    A transfer device comprising:
  6.  回路基板にLEDチップを実装する実装装置であって、
    前記実装装置内を真空環境にする真空化部と、
    前記LEDチップが配列された転写基板にライン状のレーザ光を照射するレーザ光照射部と、
    前記転写基板を保持し、第1方向に移動可能な転写基板保持部と、
    前記転写基板に保持された前記LEDチップと隙間を有して対向するように被転写基板又は前記回路基板を保持し、少なくとも前記第1方向に移動可能な被転写基板保持部と、
    前記レーザ光照射部、前記転写基板保持部、及び前記被転写基板保持部を制御する制御部と、を備え、
    前記制御部は、前記転写基板と前記被転写基板又は前記回路基板とを互いに異なる速度で、前記ライン状のレーザ光に対してその直交する方向に相対移動させて、前記ライン状のレーザ光に対応した1ライン分の複数の前記LEDチップを分離、付勢して前記被転写基板又は前記回路基板に転写するように制御することを特徴とする実装装置。
    A mounting device for mounting an LED chip on a circuit board,
    A evacuation unit for creating a vacuum environment in the mounting apparatus;
    A laser beam irradiation unit that irradiates the transfer substrate on which the LED chips are arranged with a line-shaped laser beam;
    A transfer substrate holding unit that holds the transfer substrate and is movable in a first direction;
    A transfer substrate holding unit that holds the transfer substrate or the circuit substrate so as to face the LED chip held on the transfer substrate with a gap, and is movable in at least the first direction;
    A controller that controls the laser beam irradiation unit, the transfer substrate holding unit, and the transfer substrate holding unit;
    The control unit moves the transfer substrate and the transfer substrate or the circuit substrate relative to each other in a direction perpendicular to the line-shaped laser beam at different speeds, thereby converting the line-shaped laser beam into the line-shaped laser beam. A mounting apparatus, wherein a plurality of corresponding LED chips for one line are separated and energized and controlled so as to be transferred to the substrate to be transferred or the circuit board.
  7.  前記被転写基板保持部に保持された前記回路基板に前記LEDチップを熱圧着する熱圧着ヘッドを備えるとともに、前記被転写基板保持部は保持した前記被転写基板又は前記回路基板を加熱する加熱機構を備え、
    前記制御部は、前記熱圧着ヘッドと前記被転写基板保持部とを同じ温度になるように加熱して前記LEDチップを前記回路基板に熱圧着するように制御することを特徴とする請求項6に記載の実装装置。
    A heating mechanism that includes a thermocompression bonding head for thermocompression bonding the LED chip to the circuit substrate held by the transfer substrate holding unit, and that heats the transfer substrate or circuit substrate held by the transfer substrate holding unit. With
    The control unit controls the thermocompression bonding head and the transfer substrate holding unit to be heated to the same temperature so that the LED chip is thermocompression bonded to the circuit board. The mounting apparatus described in 1.
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