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WO2017125505A1 - Puce de semi-conducteur optoélectronique et procédé de production d'une puce de semi-conducteur optoélectronique - Google Patents

Puce de semi-conducteur optoélectronique et procédé de production d'une puce de semi-conducteur optoélectronique Download PDF

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Publication number
WO2017125505A1
WO2017125505A1 PCT/EP2017/051104 EP2017051104W WO2017125505A1 WO 2017125505 A1 WO2017125505 A1 WO 2017125505A1 EP 2017051104 W EP2017051104 W EP 2017051104W WO 2017125505 A1 WO2017125505 A1 WO 2017125505A1
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WO
WIPO (PCT)
Prior art keywords
quantum well
region
semiconductor chip
optoelectronic semiconductor
layers
Prior art date
Application number
PCT/EP2017/051104
Other languages
German (de)
English (en)
Inventor
Alexander Frey
Massimo DRAGO
Joachim Hertkorn
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2017125505A1 publication Critical patent/WO2017125505A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers

Definitions

  • An optoelectronic semiconductor chip is specified.
  • a method for producing an optoelectronic semiconductor chip is specified.
  • One of the objects to be solved is, inter alia, to specify an optoelectronic semiconductor chip which has a
  • Another object to be solved is to provide a method for producing such
  • the optoelectronic semiconductor chip is, for example, a radiation emitting device
  • the semiconductor chip may be a light-emitting diode chip or a laser diode chip.
  • the optoelectronic semiconductor chip can in particular generate light during operation. It is possible that the optoelectronic
  • the optoelectronic semiconductor chip generates light in the spectral range from UV radiation to green light, in particular blue light.
  • the optoelectronic semiconductor chip comprises a p-type semiconductor region.
  • the p-type semiconductor region is p-type.
  • the optoelectronic semiconductor chip has, for example, a semiconductor body which is based on a nitride compound semiconductor material.
  • a nitride compound semiconductor material preferably Al n Ga m I Ni n - m N comprises or consists of, where 0 ⁇ n ⁇ 1, 0 ⁇ m ⁇ 1, and n + m ⁇ 1.
  • This material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, it may, for example, have one or more dopants and additional constituents.
  • the above formula contains only the essential constituents of the crystal lattice (Al, Ga, In, N), even if these can be partially replaced and / or supplemented by small amounts of further substances.
  • the semiconductor body is doped with at least one p-dopant, for example with magnesium.
  • the optoelectronic semiconductor chip comprises an n-type semiconductor region, which is formed n-conductive.
  • the semiconductor body of the semiconductor chip is in the n-type semiconductor region with at least one n-dopant,
  • the optoelectronic semiconductor chip is between the p-type semiconductor region and arranged an active zone of the n-type semiconductor region.
  • the active zone is designed as a multiple quantum well structure.
  • electromagnetic radiation is generated in the active region.
  • the electromagnetic radiation is generated by recombination of charge carriers, which takes place in the multiple quantum well structure.
  • the multiple quantum well structure has a first region with alternately first quantum well layers and first barrier layers and a second region with at least one second quantum well layer and at least one second barrier layer.
  • the multiple quantum well structure is preferably nominal
  • the multiple quantum well structure is divided into at least two regions, the first region and the second region, in the present embodiment.
  • Optoelectronic semiconductor chip has a planar extent, wherein the extension of the layer in lateral
  • a layer can be one or more layers of
  • the first region comprises alternating first quantum well layers and first barrier layers.
  • the first region comprises at least two first
  • Quantum well layers are for example within the scope of
  • the quantum well layers of the first region have the same material composition and the same thickness. Furthermore, it is possible that the first barrier layers of the first region in the context of
  • Quantum well layer and arranged at least one second barrier layer. It is possible that the second region has exactly one second quantum well layer.
  • the at least one second quantum well layer of the second region has a different material composition than the first
  • Quantum well layers of the first area That is, the material composition for the at least one second
  • Quantum well layer of the second area is specifically chosen differently than the material compositions of the first
  • Quantum well layers in the first area Quantum well layers in the first area.
  • the first quantum well layers have a first electronic band gap.
  • Band gap (also "band gap”, English: band gap) is the energetic distance between the valence band and the band gap
  • the first electronic band gap is the electronic band gap in the area of the first Quantum well layers. If the first quantum well layers are of the same design within the scope of the manufacturing tolerance, the first quantum well layers in the context of the
  • the at least second quantum well layer has a second electronic band gap, which is the electronic band gap in the region of the second quantum well layer.
  • Quantum well layers are the second electronic
  • the band gaps of the second quantum well layers then differ by at most 10% from each other.
  • the second electronic band gap of the at least one second quantum well layer is greater than the first electronic band gaps of the first
  • Semiconductor body of the optoelectronic semiconductor chip has a larger electronic band gap than in the region of the first quantum well layers.
  • electromagnetic radiation would be generated which is more energetic and thus shorter-wave than in the case of recombination of charge carriers in the region of the first
  • Quantum well layers The electronic band gaps in the area of the first and second barrier layers can be the same size.
  • the electronic band gap in the region of the second barrier layer is larger than the electronic band gap in the region of all the first
  • the second region is arranged closer to the p-type semiconductor region than the first region. That is, the second quantum well layer or all second ones
  • Quantum well layers are located closer to the p-type semiconductor region of the optoelectronic semiconductor chip than all the first quantum well layers. At its p-side, the optoelectronic semiconductor chip thus has at least one
  • the optoelectronic semiconductor chip comprises a p-type semiconductor region, an n-type semiconductor region and an active zone arranged between the p-type semiconductor region and the n-type semiconductor region, which is formed as a multiple quantum well structure is.
  • the optoelectronic semiconductor chip comprises a p-type semiconductor region, an n-type semiconductor region and an active zone arranged between the p-type semiconductor region and the n-type semiconductor region, which is formed as a multiple quantum well structure is.
  • Multiple quantum well structure a first region with alternating first quantum well layers and first
  • the first quantum well layers have first electronic band gaps and the at least one second quantum well layer has a second electronic band gap.
  • the second electronic bandgap of the at least one second quantum well layer is larger than the first one
  • the electronic bandgap of the first quantum well layers and the second region are located closer to the p-type semiconductor region than the first region.
  • One of the optoelectronic semiconductor chips described here is, inter alia, the following considerations
  • the charge carrier transport and in particular the hole line pose a problem in nitride compound semiconductors with, for example, an InGaN / GaN multiple quantum well structure grown in the active zone by means of MOVPE (metalorganic vapor phase epitaxy), which leads to increased Auger recombinations thus to a reduced brightness of the MOVPE (metalorganic vapor phase epitaxy), which leads to increased Auger recombinations thus to a reduced brightness of the MOVPE (metalorganic vapor phase epitaxy), which leads to increased Auger recombinations thus to a reduced brightness of the MOVPE (metalorganic vapor phase epitaxy), which leads to increased Auger recombinations thus to a reduced brightness of the MOVPE (metalorganic vapor phase epitaxy), which leads to increased Auger recombinations thus to a reduced brightness of the MOVPE (metalorganic vapor phase epitaxy), which leads to increased Auger recombinations thus to a reduced brightness of the MO
  • Optoelectronic semiconductor chip in the operation of generated light can result.
  • Another problem is the aging of the electronic semiconductor chip due to dopant diffusion
  • Quantum well layers that are closest to the p-type semiconductor region, which over the operating time of the
  • optoelectronic semiconductor chip leads to a reduction of the electromagnetic radiation generated during operation.
  • V-type defects can be used to inject current into the multiple quantum well structure, but this can lead to problems at higher operating temperatures or high operating currents.
  • the diffusion of dopants, particularly magnesium, into the active region can be countered by the thickness of spacers between the p-type semiconductor region and the multiple quantum well structure, the growth temperature of the p-type semiconductor region, and the dopant concentration.
  • a lower growth temperature of the p-type semiconductor region leads to a reduced diffusion of p-dopant in the active zone, but also to a poorer material quality and thus z. B. to a deteriorated efficiency of the semiconductor body.
  • Quantum well layers having a narrower bandgap This increases the brightness of the electromagnetic generated by the optoelectronic semiconductor chip during operation
  • the active zone in the multiple quantum layer structure has further regions, for example third, fourth and more regions, in which the band gaps of the quantum well layers of the regions can increase stepwise compared to the second electronic band gap.
  • the second electronic band gap is between at least 1.005 and at most 1.05 times larger than all first electronic band gaps. It can the
  • Eg (x) x Eg (InN) + (1-x) Eg (GaN) -b x (1-x),
  • Quantum well layers containing about 19% indium and the second quantum well layer has an indium concentration, relative to the indium concentration in the first
  • Quantum well layers is smaller by at least 2% and at most 20%.
  • the second region directly adjoins the p-type semiconductor region, i. H. the second
  • Quantum well layer with the second electronic band gap larger than the first electronic band gaps of the quantum well layers in the first region closes the active region in the direction from the n side to the p side of the
  • Optoelectronic semiconductor chips from the p-side down Becomes For example, the semiconductor body of the optoelectronic semiconductor chip grown from the n-side to the p-side, first the first region and then the second region is grown, wherein the p-type semiconductor region can follow directly the second region.
  • a spacer layer of, for example, undoped GaN may be arranged between the second region and the p-type semiconductor region.
  • the quantum well layer in the second region, ie the second quantum well layer, can therefore also be considered as a total
  • the second region has exactly one second quantum well layer, that is, it is possible that the second region consists of the second quantum well layer and the second barrier layer In particular, it is possible that the second region directly adjoins the p-type semiconductor region, ie the optoelectronic
  • Quantum well layer adjacent to the p-type semiconductor region In the direction of the n-type semiconductor region, the first region then follows
  • the first region has at least two and at most ten, in particular exactly five, first ones
  • Quantum well layers on.
  • the optoelectronic semiconductor chip there is a radiative recombination of the charge carriers, in particular in the first region into the first Quantum well layers, instead. It has been found that a distribution of the charge carriers to at least two and at most ten, in particular exactly five first
  • Quantum well layers with respect to the efficiency of the generated electromagnetic radiation is optimal.
  • Quantum well layer has a lower indium concentration than all first quantum well layers. That is, the larger band gap in the region of the second quantum well layers is achieved by a smaller indium concentration in the InGaN-based material of the quantum well layers.
  • This indium concentration can be adjusted, for example, by varying the rate at which indium or gallium is provided during the MOVPE growth of the active zone. For example, both the reduction of the indium supply and the reduction of the gallium supply during the growth of the multiple quantum well structure leads to the formation of the second quantum well layer with a
  • Quantum well layer an indium concentration which is smaller by at least 2% and at most 20%, in particular by at least 2% and at most 8%, relative to the indium concentration of all first quantum well layers.
  • a second quantum well layer can be realized in which the second electronic band gap to 1.005 times 1.05 times larger than the first band gaps of the first quantum well layers.
  • the second quantum well layer has a
  • an n-type semiconductor region is first generated.
  • the n-type semiconductor region is generated, for example, by means of an MOVPE method. In the growth direction of the n-type semiconductor region
  • the first region is also produced, for example, by means of MOVPE in the same epitaxial reactor as the n-type semiconductor region. In this case, the first region is preferably produced without targeted addition of dopant.
  • the first area then has z. InGaN quantum well layers, between which GaN barrier layers are arranged.
  • a further method step in the growth direction, for example, on the side of the first region facing away from the n-type semiconductor region, there is a second region with at least a second quantum well layer and at least one second barrier layer is generated.
  • the second area can in turn be generated by the MOVPE method on the first area.
  • a p-type semiconductor region takes place on the side of the second region which faces away from the first region.
  • the p-type semiconductor region can in turn be generated in the same epitaxial reactor by means of the MOVPE method, a p-type dopant, eg. As magnesium is added.
  • the first quantum well layers are generated at a first temperature, which is at least a second one
  • Quantum well layer is generated at a second temperature, wherein the second temperature is greater than the first
  • Quantum well layer differ from each other only by the changed growth temperature, with the remaining
  • a second temperature which is at least 1 K and at most 20 K greater than the first temperature at which the first quantum well layers are grown is optimal. For example, a second
  • Quantum well layer is the case.
  • Quantum well layers leads to a larger electronic band gap. In this way, it is possible to adjust the second, larger electronic band gap particularly easily and accurately.
  • the first and second barrier layers can be grown at the same temperatures, the z. B. at least 25 to at most 60 K are greater than that
  • the method is carried out with the following steps:
  • the first quantum well layer is generated with a first indium molar flux
  • the at least one second quantum well layer is generated with a second indium molar flow, and the second indium molar flow is lower than the first indium molar flow.
  • the change in the indium molar flux can be carried out alternatively or in addition to the described temperature change.
  • One possibility is the indium concentration in the at least one second quantum well layer compared to the first
  • the method is carried out with the following steps:
  • the at least one second quantum well layer is generated at a second growth rate
  • One possibility is the indium concentration in the at least one second quantum well layer compared to the first
  • a lower second growth rate leads to a lower indium concentration.
  • the change in the growth rate may be carried out additionally or alternatively to the change in temperature and / or to change the indium molar flow.
  • the method is carried out with the following steps:
  • first quantum well layers and the at least one second quantum well layer consist of AlInGaN or are formed with this material
  • the aluminum concentration in the at least one second quantum well layer is higher than in the first one
  • the quantum well layers are formed with Al (x) In (y) Ga (1-x-y), where x is the concentration of aluminum and y is the concentration of indium. It has been shown that a further possibility of increasing the band gap in the at least one second quantum well layer compared to the first quantum well layers is the admixture of aluminum. Addition of aluminum to an InGaN quantum well layer in the range between 1% and 10% increases the band gap by about 0.2% to 5%
  • the change in the aluminum concentration can be any change in the aluminum concentration.
  • FIG. 1A shows a schematic sectional illustration of an optoelectronic semiconductor chip described here according to an exemplary embodiment. Based on the schematic Representations of FIGS. 1B and 1C are properties of the optoelectronic semiconductor chip in accordance with FIGS. 1B and 1C are properties of the optoelectronic semiconductor chip in accordance with FIG. 1A
  • FIG. 1A shows a schematic sectional representation of an optoelectronic semiconductor chip described here according to a first exemplary embodiment.
  • the optoelectronic semiconductor chip 10 comprises a semiconductor body 10 ⁇ .
  • the semiconductor body 10 ⁇ comprises an n-type semiconductor region 6, which in the present case is based on n-doped nitride compound semiconductor material.
  • the n-type semiconductor region 6 is followed by the active zone 5.
  • the active zone 5 still a partially n-doped GaN / InGaN
  • the active zone comprises the multiple quantum well structure 51, 52, which is divided into a first region 51 and a second region 52.
  • first quantum well layers 51A and first barrier layers 51B are alternately arranged.
  • the first region B comprises 5 pairs of first quantum well layers and first barrier layers.
  • the multiple quantum well structure in the embodiment of Figure 1 comprises five first
  • Quantum well layers 51A and a second quantum well layer 51B Quantum well layers 51A and a second quantum well layer 51B.
  • the first and second quantum well layers differ from each other in their indium concentration.
  • the indium concentration is the second
  • Quantum well layer 5 "6 lower relative to the indium concentration of the first quantum well layers 51A
  • Example is the indium concentration in the first
  • Quantum well layers 51A 16.92%, whereas the indium concentration in the second quantum well layer 52A is 16.06%. This can be achieved, for example, by generating the second quantum well layer at a growth temperature T2 by an MOVPE method that is 4 K larger than the growth temperature Tl at which the first quantum well layer 51A is generated.
  • opposite side of the second region 52 follows the p-type semiconductor region 4, for example, on p-doped
  • Nitride compound semiconductor material based.
  • magnesium is used as the p-type dopant.
  • Between the active zone 5 and the second region 52 may be a few nanometer thick spacer layer of, for example, undoped GaN, which is not shown.
  • Embodiment of Figure 1A includes in addition to Semiconductor body 10 ⁇ a carrier substrate 1, which is formed for example with an electrically conductive material such as germanium or doped silicon. Between the carrier substrate 1 and the semiconductor body 10 ⁇ , a connection layer, for example a solder layer, and a mirror layer 3 are arranged.
  • the optoelectronic semiconductor chip 10 further comprises a first contact layer 7 at the
  • Electromagnetic radiation leaves the optoelectronic semiconductor chip 10, for example, mainly through the radiation exit surface 9.
  • the optoelectronic semiconductor chip is in the
  • Light emitting diode shown, which can be contacted, for example, at the second contact layer 8 via a bonding wire.
  • a semiconductor chip may also be a flip chip, a sapphire chip, a UX3 chip or any type of
  • the optoelectronic semiconductor chip has a different number of first and second quantum well layers than specified for the embodiment of FIG. 1A.
  • the course of the electronic band gap in the active zone 5 in the direction z is shown.
  • the direction z in this case runs from the p-side of the semiconductor body 10 ⁇ to the n-side of the semiconductor body 10, see also FIG. 1A.
  • the electronic band gap is plotted in arbitrary units.
  • the second one is electronic band gap E QW 2 at the second
  • Quantum well layer 52A larger than the electronic band gap E QW i in the first quantum well layers 51A.
  • first and second barrier layers 52B and 51B may be the same electronic within the manufacturing tolerance
  • FIG. 1C shows the number N of free p-type landing carriers, "holes", in the first quantum well layers 51A for an opto-electronic one
  • the associated optoelectronic semiconductor chip lacks the second region 52 with the second quantum well layer 52A, which has a larger second electronic band gap than the first electronic band gaps of the first
  • Figure IC shows the situation for an optoelectronic semiconductor chip as described in connection with Figures 1A and 1B, in which the second region 52 is present.
  • the holes are as described herein
  • Charge carriers are distributed more uniformly over the quantum well layers provided for generating radiation, resulting in a reduction in Auger recombination leads and thus to a higher efficiency at high currents.
  • Quantum well layers 51A of the first region 51 As shown schematically by the arrows, the move
  • the second region 52 of the multiple quantum well structure with the second quantum well layer 52A results in a smoother one
  • optoelectronic semiconductor chips further amplified. That is, optoelectronic described here
  • Sensitivity of the human eye is particularly large.
  • optoelectronic semiconductor chips which emit light in the blue spectral range, which is subsequently converted into white light by means of phosphorescent materials, a shift into the light is advantageously carried out
  • the semiconductor chips of group I and group III are optoelectronic semiconductor chips, as described here, which have the first region 51 and the second region 52 in the multiple quantum well structure.
  • Group II comprises semiconductor chips having a multiple quantum well structure having only the first region 51 and there six quantum well layers 51A.
  • Group IV comprises semiconductor chips which only have a first
  • the schematic plot of Figure 6 shows the luminous flux Phiv plotted in lumens against the operating current in mA for the first group I of optoelectronic semiconductor chips compared to the fourth group IV optoelectronic
  • the luminous flux is greater for conventional optoelectronic semiconductor chips, in particular for larger operating currents, than for conventional optoelectronic semiconductor chips.
  • FIG. 9A shows the course for optoelectronic
  • FIG. 9B shows the profile for group I optoelectronic semiconductor chips as described here. As can be seen from a comparison of the figures, for conventional optoelectronic semiconductor chips without the second region 52 of the multiple quantum well structure, there is a reduction in the value of
  • Semiconductor chip more stable against diffusion of the p-type dopant, in particular against the diffusion of magnesium, which is enhanced by a high growth temperature of the p-side and / or by long operating times.
  • Optoelectronic semiconductor chip so among other things by increased brightness, by an improved ratio between the brightness at high current and low current and by an increased life.
  • the invention is not limited by the description based on the embodiments of these. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes any combination of features in the patent claims, even if this feature or combination itself is not explicitly described in the claims

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Abstract

L'invention concerne une puce de semi-conducteur optoélectronique (10) comprenant une zone active (5) réalisée sous la forme d'une structure à puits quantiques multiples (51, 52). Selon l'invention, - la structure à puits quantiques multiples (51, 52) comprend une première région (51) pourvue de premières couches de puits quantiques (51a) et de premières couches de barrière (51b) disposées de façon alternée et une seconde région (52) pourvue d'au moins une deuxième couche de puits quantiques (52A) et d'au moins une deuxième couche de barrière (52b), - les premières couches de puits quantique (51a) comprennent des premières bandes interdites électroniques (EQW1) – l'au moins une deuxième couche de puits quantiques (52A) comprend une seconde bande interdite électronique (EQW2), - la seconde bande interdite électronique (EQW2) de l'au moins une deuxième couche de puits quantiques (52A) est plus grande que la première bande interdite électronique (EQW1) des premières couches de puits quantiques (51a) et - la seconde région (52) est disposée plus près d'une région semi-conductrice de type p (4) que de la première région (51). En outre, l'invention concerne un procédé de fabrication d'une telle puce de semi-conducteur (10).
PCT/EP2017/051104 2016-01-21 2017-01-19 Puce de semi-conducteur optoélectronique et procédé de production d'une puce de semi-conducteur optoélectronique WO2017125505A1 (fr)

Applications Claiming Priority (2)

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DE102016101046.4A DE102016101046B4 (de) 2016-01-21 2016-01-21 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102016101046.4 2016-01-21

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