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WO2017164129A1 - Polyhydroxyamide composition for manufacturing substrate for electronic device, and polybenzoxazole resin film - Google Patents

Polyhydroxyamide composition for manufacturing substrate for electronic device, and polybenzoxazole resin film Download PDF

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Publication number
WO2017164129A1
WO2017164129A1 PCT/JP2017/010970 JP2017010970W WO2017164129A1 WO 2017164129 A1 WO2017164129 A1 WO 2017164129A1 JP 2017010970 W JP2017010970 W JP 2017010970W WO 2017164129 A1 WO2017164129 A1 WO 2017164129A1
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Prior art keywords
group
carbon atoms
following formula
polyhydroxyamide
represented
Prior art date
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PCT/JP2017/010970
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French (fr)
Japanese (ja)
Inventor
和也 進藤
江原 和也
Original Assignee
日産化学工業株式会社
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Application filed by 日産化学工業株式会社 filed Critical 日産化学工業株式会社
Priority to KR1020187028067A priority Critical patent/KR20180127376A/en
Priority to CN201780018985.2A priority patent/CN108884316B/en
Priority to KR1020217025205A priority patent/KR102382236B1/en
Priority to JP2018507311A priority patent/JP6904332B2/en
Publication of WO2017164129A1 publication Critical patent/WO2017164129A1/en

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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/02Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
    • C08G69/26Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
    • C08G69/32Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids from aromatic diamines and aromatic dicarboxylic acids with both amino and carboxylic groups aromatically bound
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22Polybenzoxazoles
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L77/00Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
    • C08L77/10Polyamides derived from aromatically bound amino and carboxyl groups of amino-carboxylic acids or of polyamines and polycarboxylic acids
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate

Definitions

  • the present invention relates to a polyhydroxyamide composition for producing a substrate for an electronic device, and a polybenzoxazole resin film obtained from the composition.
  • Glass has excellent heat resistance and low coefficient of linear expansion, so it is used as a member for electronic equipment. Therefore, excellent heat resistance and a low coefficient of linear expansion are also required for new materials replacing glass.
  • it is necessary to process at a high temperature of 200 ° C. or higher, and in some cases 400 ° C. or higher while maintaining high dimensional accuracy. It is essential to be excellent in terms of characteristics.
  • polyimide resins are attracting attention as candidates for new materials because of their high heat resistance, flame retardancy and excellent electrical insulation.
  • generally used polyimide resins do not have a sufficiently low linear expansion coefficient to the extent that high dimensional accuracy can be maintained even under high temperature processing, and therefore, in the display manufacturing process, the resin shrinks (or expands). ) May not be possible at high temperatures.
  • Non-patent Document 1 there is polybenzoxazole resin as a material having heat resistance and low linear expansion coefficient equal to or higher than those of polyimide.
  • polyhydroxyamide which is a precursor of polybenzoxazole
  • polyamic acid which is a precursor of polyimide
  • Patent Document 3 a technique for protecting a side chain hydroxy group with a silyl group, using hexamethylphosphoric triamide as a solvent, or performing copolymerization with a polyamic acid has been reported.
  • Patent Document 3 Patent Document 3
  • silylating agents are expensive, and hexamethylphosphoric triamide is highly toxic and therefore lacks industrial applicability.
  • the copolymerization with polyamic acid has a drawback of poor heat resistance.
  • the present invention has been made in view of the above circumstances, and provides a polyhydroxyamide composition capable of providing a polybenzoxazole resin film having high heat resistance, and a polybenzoxazole resin film obtained from the composition. Objective.
  • the present invention provides the following polyhydroxyamide composition for producing a substrate for an electronic device and a polybenzoxazole resin film.
  • a polyhydroxyamide composition for producing a substrate for electronic devices comprising a unit represented by the following formula (1) and a polyhydroxyamide containing a unit represented by the following formula (2), and (B) an organic solvent.
  • X 1 represents a biphenyldiyl group having a hydroxy group on the carbon atom adjacent to the carbon atom bonded to the nitrogen atom;
  • Y 1 represents a divalent aromatic group having 6 to 14 carbon atoms]
  • Y 2 represents a group represented by the following formula (3);
  • n and m represent positive numbers satisfying 0 ⁇ n ⁇ 100, 0 ⁇ m ⁇ 100, and 0 ⁇ n + m ⁇ 100.
  • Z 1 represents —O—, —NH— or —N (R) —
  • R represents an alkyl group having 1 to 10 carbon atoms
  • Ar 1 and Ar 2 are independently of each other; Represents a divalent aromatic group having 6 to 14 carbon atoms; a broken line represents a bond.
  • a polyhydroxyamide composition for producing a substrate for an electronic device wherein X 1 is a group represented by the following formula (4): (Wherein R 1 to R 6 are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, or an alkyl group having 1 to 20 carbon atoms which may be substituted with a halogen atom, Represents an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms; a broken line represents a bond.) 3.
  • Z 1 is as defined above; R 7 to R 18 may be independently of each other substituted with a hydrogen atom, a hydroxy group, a halogen atom, a nitro group, a cyano group, or a halogen atom.
  • a broken line represents a bond.) 5.
  • R 7 to R 18 are hydrogen atoms. 6).
  • the organic solvent contains at least one selected from amides represented by the following formula (S1), amides represented by the following formula (S2), and amides represented by the following formula (S3).
  • S1 amides represented by the following formula
  • S2 amides represented by the following formula (S3).
  • R 21 and R 22 each independently represent an alkyl group having 1 to 10 carbon atoms.
  • R 23 represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms.
  • A is a natural number.
  • An electronic device comprising: a step of applying a polyhydroxyamide composition for producing a substrate for an electronic device according to any one of 1 to 8 on a substrate; and a step of heating to evaporate a solvent and ring-closing the polyhydroxyamide
  • a method for producing a polybenzoxazole resin film for a substrate 10.
  • a polybenzoxazole resin film for an electronic device substrate obtained from the polyhydroxyamide composition according to any one of 10.1 to 8.
  • An electronic device comprising as a substrate the polybenzoxazole resin film for a substrate for electronic devices according to 10.10 or 11. 13. 12 electronic devices which are organic EL elements.
  • 14 A polyhydroxyamide containing a unit represented by the following formula (10) and a unit represented by the following formula (11). [Wherein, X 1 represents a biphenyldiyl group having a hydroxy group on the carbon atom adjacent to the carbon atom bonded to the nitrogen atom; Y 1 represents a divalent aromatic group having 6 to 14 carbon atoms] Y 2 represents a group represented by the following formula (3); n and m represent positive numbers satisfying 5 ⁇ n ⁇ 25, 75 ⁇ m ⁇ 95, and 80 ⁇ n + m ⁇ 100.
  • R 1 to R 6 are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, or an alkyl group having 1 to 20 carbon atoms which may be substituted with a halogen atom, Represents an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms; a broken line represents a bond.
  • Y 1 is a group represented by the following formula (5)
  • Y 2 is a group represented by the following formula (6).
  • Z 1 is as defined above; R 7 to R 18 may be independently of each other substituted with a hydrogen atom, a hydroxy group, a halogen atom, a nitro group, a cyano group, or a halogen atom.
  • a broken line represents a bond.
  • a method for producing a polyhydroxyamide comprising subjecting a dicarboxylic acid derivative represented by the following formula (14) in an amount of 0.75 to 0.95 mole to the mole to condensation polymerization in a solvent in the presence of a catalyst.
  • X 1 represents a biphenyldiyl group having a hydroxy group on the carbon atom adjacent to the carbon atom bonded to the nitrogen atom; Y 1 represents a divalent aromatic group having 6 to 14 carbon atoms] ; Y 2 represents a group represented by the following formula (3).
  • Z 1 represents —O—, —NH— or —N (R) —, R represents an alkyl group having 1 to 10 carbon atoms; Ar 1 and Ar 2 are independently of each other; Represents a divalent aromatic group having 6 to 14 carbon atoms; a broken line represents a bond.
  • R 1 to R 6 are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, or an alkyl group having 1 to 20 carbon atoms which may be substituted with a halogen atom, Represents an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms; a broken line represents a bond.
  • 22. 21. A method for producing a polyhydroxyamide according to 21, wherein X 1 is a group represented by the following formula (4 ′). (In the formula, a broken line represents a bond.) 23.
  • a broken line represents a bond.
  • 24. A method for producing a polyhydroxyamide of 23, wherein R 7 to R 18 are hydrogen atoms.
  • 25. A process for producing a polyhydroxyamide according to any one of 20 to 24, wherein Y 2 is a group represented by the following formula (7), (8) or (9). (In the formula, a broken line represents a bond.)
  • the polybenzoxazole resin film obtained from the polyhydroxyamide composition of the present invention has high heat resistance and a low linear expansion coefficient. Therefore, the polybenzoxazole resin film is useful as a substrate for electronic devices.
  • the polyhydroxyamide composition for producing a substrate for an electronic device of the present invention comprises (A) a polyhydroxyamide having a predetermined structure, and (B) an organic solvent.
  • the polyhydroxyamide as the component (A) includes a unit represented by the following formula (1) and a unit represented by the following formula (2).
  • X 1 is a biphenyldiyl group having a hydroxy group on the carbon atom adjacent to the carbon atom bonded to the nitrogen atom.
  • X 1 is preferably a group represented by the following formula (4).
  • R 1 to R 6 are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, or an alkyl group having 1 to 20 carbon atoms which may be substituted with a halogen atom, or 2 carbon atoms
  • a broken line represents a bond.
  • the alkyl group may be linear, branched or cyclic, and specific examples thereof include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, a cyclopropyl group, an n-butyl group, an isobutyl group, sec-butyl group, tert-butyl group, cyclobutyl group, 1-methyl-cyclopropyl group, 2-methyl-cyclopropyl group, n-pentyl group, 1-methyl-n-butyl group, 2-methyl-n-butyl Group, 3-methyl-n-butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl-n-propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n- Propyl group, cyclopentyl group, 1-methyl-cyclobutyl group, 2-methyl-cyclobutyl group, 3-methyl-cyclobutyl group,
  • the alkenyl group may be linear, branched or cyclic, and specific examples thereof include ethenyl group, n-1-propenyl group, n-2-propenyl group, 1-methylethenyl group, n-1- Butenyl group, n-2-butenyl group, n-3-butenyl group, 2-methyl-1-propenyl group, 2-methyl-2-propenyl group, 1-ethylethenyl group, 1-methyl-1-propenyl group, 1 -Methyl-2-propenyl group, n-1-pentenyl group, n-1-decenyl group, n-1-eicocenyl group and the like.
  • the alkynyl group may be linear, branched or cyclic, and specific examples thereof include ethynyl group, n-1-propynyl group, n-2-propynyl group, n-1-butynyl group, n- 2-butynyl group, n-3-butynyl group, 1-methyl-2-propynyl group, n-1-pentynyl group, n-2-pentynyl group, n-3-pentynyl group, n-4-pentynyl group, 1 -Methyl-n-butynyl group, 2-methyl-n-butynyl group, 3-methyl-n-butynyl group, 1,1-dimethyl-n-propynyl group, n-1-hexynyl group, n-1-decynyl group N-1-pentadecynyl group, n-1-eicosinyl group and the
  • aryl group examples include phenyl group, 1-naphthyl group, 2-naphthyl group, 1-anthryl group, 2-anthryl group, 9-anthryl group, 1-phenanthryl group, 2-phenanthryl group, 3-phenanthryl group. Group, 4-phenanthryl group, 9-phenanthryl group and the like.
  • heteroaryl group examples include 2-thienyl group, 3-thienyl group, 2-furanyl group, 3-furanyl group, 2-oxazolyl group, 4-oxazolyl group, 5-oxazolyl group, 3-isoxazolyl group, 4-isoxazolyl group, 5-isoxazolyl group, 2-thiazolyl group, 4-thiazolyl group, 5-thiazolyl group, 3-isothiazolyl group, 4-isothiazolyl group, 5-isothiazolyl group, 2-imidazolyl group, 4-imidazolyl group, Examples include 2-pyridyl group, 3-pyridyl group, 4-pyridyl group and the like.
  • R 1 to R 6 are preferably a hydrogen atom, a methyl group, a halogen atom, or a phenyl group, more preferably a hydrogen atom, a methyl group, or a halogen atom, and most preferably a hydrogen atom.
  • X 1 is most preferably a group represented by the following formula (4 ′). (In the formula, a broken line represents a bond.)
  • Y 1 represents a divalent aromatic group having 6 to 14 carbon atoms.
  • Y 2 represents a group represented by the following formula (3).
  • Z 1 represents —O—, —NH— or —N (R) —
  • R represents an alkyl group having 1 to 10 carbon atoms. Specific examples of the alkyl group represented by R include those described above. Z 1 is preferably —O— or —NH—.
  • Ar 1 and Ar 2 each independently represent a divalent aromatic group having 6 to 14 carbon atoms.
  • Examples of the divalent aromatic group represented by Y 1 , Ar 1 and Ar 2 include a phenylene group, a naphthylene group, an anthracenediyl group, a phenanthrene diyl group, a biphenyldiyl group, and the like. A part or all of them may be substituted with a substituent.
  • Y 1 is preferably a group represented by the following formula (5)
  • Y 2 is preferably a group represented by the following formula (6).
  • R 7 to R 18 are each independently a hydrogen atom, a hydroxy group, a halogen atom, a nitro group, a cyano group, or an alkyl group having 1 to 20 carbon atoms which may be substituted with a halogen atom, or 2 carbon atoms
  • a broken line represents a bond. Examples of the alkyl group, alkenyl group, alkynyl group, aryl group and heteroaryl group are the same as those described above.
  • R 7 to R 18 are preferably a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a halogen atom or a phenyl group, more preferably a hydrogen atom, an alkyl group having 1 to 20 carbon atoms or a halogen atom, a hydrogen atom, methyl A group and a halogen atom are more preferable, and a hydrogen atom is most preferable.
  • Y 2 is most preferably a group represented by the following formula (7), (8) or (9). (In the formula, a broken line represents a bond.)
  • n and m represent positive numbers that satisfy 0 ⁇ n ⁇ 100, 0 ⁇ m ⁇ 100, and 0 ⁇ n + m ⁇ 100.
  • n and m are preferably positive numbers satisfying 5 ⁇ n ⁇ 25, 75 ⁇ m ⁇ 95, and 80 ⁇ n + m ⁇ 100 from the viewpoint of solubility and heat resistance, and 10 ⁇ n ⁇ 25, 75 ⁇ m ⁇ 90.
  • positive numbers satisfying 85 ⁇ n + m ⁇ 100 are more preferable, and positive numbers satisfying 20 ⁇ n ⁇ 25, 75 ⁇ m ⁇ 80, and 95 ⁇ n + m ⁇ 100 are even more preferable.
  • the polyhydroxyamide may include units other than the unit represented by the formula (1) and the unit represented by the formula (2) (hereinafter also referred to as other units).
  • the weight average molecular weight (Mw) of the polyhydroxyamide is preferably 5,000 to 1,000,000, more preferably 10,000 to 100,000, and even more preferably 20,000 to 100,000.
  • Mw is an average molecular weight obtained by standard polystyrene conversion by gel permeation chromatography (GPC) analysis.
  • the polyhydroxyamide contains a diamine compound represented by the following formula (12), a dicarboxylic acid derivative represented by the following formula (13), and a dicarboxylic acid derivative represented by the following formula (14) in a solvent, If necessary, it can be produced by condensation polymerization in the presence of a base.
  • a diamine compound represented by the following formula (12) a dicarboxylic acid derivative represented by the following formula (13), and a dicarboxylic acid derivative represented by the following formula (14) in a solvent, If necessary, it can be produced by condensation polymerization in the presence of a base.
  • X 1 , Y 1 and Y 2 are the same as described above.
  • Hal represents a halogen atom such as a chlorine atom, a bromine atom or an iodine atom.
  • the amount of the dicarboxylic acid derivative represented by the formula (13) is preferably 0.05 to 0.25 mol, based on 1 mol of the diamine compound represented by the formula (12). 0.25 mol is more preferable, and 0.20 to 0.25 mol is even more preferable.
  • the amount of the dicarboxylic acid derivative represented by the formula (14) is preferably from 0.75 to 0.95 mol, preferably from 0.75 to 0, per 1 mol of the diamine compound represented by the formula (12). .90 mol is more preferable, and 0.75 to 0.80 mol is even more preferable.
  • solvent used in the condensation polymerization reaction examples include N-methyl-2-pyrrolidone (NMP), N-ethyl-2-pyrrolidone, N, N-dimethylformamide, N, N-dimethylacetamide, hexamethylphosphoric triamide, 3 -Methoxy-N, N-dimethylpropanamide, 3-butoxy-N, N-dimethylpropanamide and the like.
  • Examples of the base include potassium carbonate, potassium hydroxide, sodium carbonate, sodium hydroxide, sodium hydrogen carbonate, sodium ethoxide, sodium acetate, lithium carbonate, lithium hydroxide, lithium oxide, potassium acetate, magnesium oxide, calcium oxide, water Barium oxide, trilithium phosphate, trisodium phosphate, tripotassium phosphate, cesium fluoride, aluminum oxide, ammonia, n-propylamine, trimethylamine, triethylamine, diisopropylamine, diisopropylethylamine, N-methylpiperidine, 2,2 , 6,6-tetramethyl-N-methylpiperidine, pyridine, 4-dimethylaminopyridine, N-methylmorpholine and the like.
  • the amount of the base added is preferably 0.5 to 3.0 mol, more preferably 0.8 to 2.0 mol, relative to 1 mol of the diamine compound.
  • the reaction temperature may be appropriately set in the range from the melting point of the solvent to be used to the boiling point of the solvent, and is usually about ⁇ 20 to 100 ° C., preferably about ⁇ 10 to 100 ° C.
  • the polymerization reaction time is usually about 1 to 48 hours, preferably about 1 to 24 hours.
  • the organic solvent of component (B) is not particularly limited as long as it can dissolve the polyhydroxyamide, but considering that a highly flat polybenzoxazole resin film can be obtained with good reproducibility, the following formula (S1) And those containing at least one selected from amides represented by the following formula (S2) and amides represented by the following formula (S3).
  • R 21 and R 22 each independently represent an alkyl group having 1 to 10 carbon atoms.
  • R 23 represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms.
  • the alkyl group may be linear, branched or cyclic, and specifically includes a methyl group, an ethyl group, an n-propyl group, an isopropyl group, a cyclopropyl group, an n-butyl group, an isobutyl group, Examples thereof include a sec-butyl group and a tert-butyl group.
  • a represents a natural number, preferably a natural number of 1 to 3, more preferably 1 or 2.
  • Examples of the organic solvent represented by the formula (S1) include 2-methoxy-N, N-dimethylacetamide, 3-methoxy-N, N-dimethylpropylamide, 3-ethoxy-N, N-dimethylpropylamide, 3- Propoxy-N, N-dimethylpropylamide, 3-isopropoxy-N, N-dimethylpropylamide, 3-butoxy-N, N-dimethylpropylamide, 3-sec-butoxy-N, N-dimethylpropylamide, 3 -Tert-butoxy-N, N-dimethylpropylamide and the like.
  • Examples of the organic solvent represented by the formula (S2) include N-methyl-2-pyrrolidone (NMP), N-ethyl-2-pyrrolidone, N-propyl-2-pyrrolidone, N-butyl-2-pyrrolidone and the like. It is done.
  • Examples of the organic solvent represented by the formula (S3) include N, N-dimethylformamide, N, N-dimethylacetamide, N, N-dimethylpropionamide, N, N-dimethylisobutyramide and the like.
  • the solvent alone does not dissolve the polyhydroxyamide, it can be used in addition to the solvent as long as the solubility is not impaired.
  • Specific examples thereof include ethyl cellosolve, butyl cellosolve, ethyl carbitol, butyl carbitol, ethyl carbitol acetate, ethylene glycol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, and 1-butoxy-2-propanol.
  • the concentration of polyhydroxyamide is appropriately set in consideration of the thickness of the resin film to be produced, the viscosity of the composition, etc., but is usually about 1 to 30% by mass, preferably 1 About 20% by mass.
  • the polybenzoxazole resin film of the present invention is obtained from the polyhydroxyamide composition.
  • the method for producing the polybenzoxazole resin film includes a step of applying the polyhydroxyamide composition onto a substrate, and a step of heating to evaporate the solvent and ring-closing the polyhydroxyamide.
  • the substrate examples include glass, plastic (polycarbonate, polymethacrylate, polystyrene, polyester, polyolefin, epoxy resin, melamine resin, triacetyl cellulose, ABS, AS, norbornene resin, etc.), metal (silicon wafer, etc.), SiN, Examples thereof include glass substrates with vapor deposition films such as SiO films, wood, paper, slate, etc. From the viewpoint of productivity, glass, metal (silicon wafer, etc.) are particularly preferable.
  • the base material surface may be comprised with the single material and may be comprised with two or more materials.
  • the method for applying the polyhydroxyamide composition is not particularly limited, for example, cast coating method, spin coating method, blade coating method, dip coating method, roll coating method, bar coating method, die coating method, inkjet method, Examples of the printing method include relief printing, intaglio printing, planographic printing, and screen printing.
  • the heating temperature for evaporating the organic solvent is preferably 50 to 200 ° C, more preferably 50 to 150 ° C.
  • the heating time at that time is preferably 5 minutes to 5 hours, and more preferably 5 minutes to 3 hours.
  • the heating temperature for ring closure is usually appropriately determined within the range of 50 to 550 ° C., but is preferably 200 ° C. or more, and preferably 500 ° C. or less. By setting the heating temperature in this way, it is possible to sufficiently advance the oxazolation reaction while preventing the obtained film from being weakened.
  • the heating time varies depending on the heating temperature, and cannot be generally defined, but is usually 5 minutes to 5 hours.
  • the ring closure rate may be in the range of 50 to 100%.
  • the heating temperature is gradually raised as it is, and finally heating is performed at a temperature exceeding 375 ° C. to 450 ° C. for 30 minutes to 4 hours.
  • the thickness of the resin film is not particularly limited, but when used as a substrate of an electronic device to be described later, it is usually about 1 to 100 ⁇ m, preferably about 5 to 75 ⁇ m from the viewpoint of sufficient self-supporting property and flexibility. The thickness is preferably about 5 to 50 ⁇ m.
  • the resin film After the resin film is formed, the resin film can be peeled off from the substrate and recovered.
  • the film can be peeled by immersion in water, a laser lift-off method using ultraviolet light having a wavelength of 308 nm, or the like.
  • the polybenzoxazole resin film of the present invention thus obtained has high heat resistance and a small linear expansion coefficient.
  • the polybenzoxazole resin film of the present invention preferably has a 5% weight loss temperature of 600 ° C. or higher and a linear expansion coefficient of 50 to 400 ° C. of 8 ppm / ° C. or lower.
  • the electronic device of the present invention comprises the above-described polybenzoxazole resin film as a substrate.
  • the electronic device include an organic EL element, a liquid crystal display, an organic EL display, an optical semiconductor (LED) element, electronic paper, a solid-state imaging element, an organic thin film solar cell, a dye-sensitized solar cell, an organic thin film transistor (TFT), and a 3D display. And a touch panel.
  • the polyhydroxyamide composition is applied on a substrate and heated to form a polybenzoxazole resin film fixed to the substrate.
  • a desired circuit is formed on the resin film, and then the resin film is cut, and the resin film on which the circuit is formed is peeled off from the substrate to form a circuit.
  • an electronic device can be manufactured.
  • NMP N-methylpyrrolidone HAB: 4,4′-diamino-3,3′-dihydroxybiphenyl 4BP: 3,3′-diamino-4,4′-dihydroxybiphenyl
  • TPC terephthalic acid chloride
  • IPC isophthalic acid chloride
  • DEDC 4,4'-diphenyl ether dicarboxylic acid chloride
  • Mw and Mw / Mn of the polymer are GPC apparatus manufactured by JASCO Corporation (column: Shodex (registered trademark) columns KF803L and KF805L manufactured by Showa Denko KK, elution solvent: dimethylformamide, flow rate: 1.0 mL / min, Column temperature: 50 ° C., Mw: standard polystyrene conversion value).
  • Example 2 Comparative Examples 1 to 5
  • Synthesis of polyhydroxyamide P2 and polyhydroxyamides CP1 to CP5 Polyhydroxyamide P2 and polyhydroxyamides CP1 to CP5 were synthesized in the same manner as in Example 1.
  • Table 1 shows the type and amount of dicarboxylic acid chloride used, the type and amount of diamine, the amount of NMP used, Mw, and Mw / Mn.
  • the heating temperature was raised to 400 ° C. and heated at 400 ° C. for 60 minutes. During the temperature increase, the film-coated substrate was not removed from the oven but heated in the oven.
  • the film thickness of the obtained coating film was measured with a contact-type film thickness measuring device (Dektak 3ST manufactured by ULVAC). Table 2 shows the measurement results of the film thickness. Thereafter, the glass substrate was allowed to stand in 70 ° C. pure water in a 1 L beaker, and the film was peeled off.

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Abstract

Provided is a polyhydroxyamide composition for manufacturing a substrate for an electronic device, the composition including: (A) a polyhydroxyamide containing a unit represented by formula (1) and a unit represented by formula (2); and (B) an organic solvent. [In the formulae, X1 represents a biphenyldiyl group having a hydroxy group on a carbon atom adjacent to a carbon atom bonded to a nitrogen atom; Y1 represents a divalent aromatic group having 6-14 carbon atoms; Y2 represents a group represented by formula (3); and n and m each represent an integer satisfying 0<n<100, 0<m<100, and 0<n+m≤100. (In the formula, Z1 represents -O-, -NH-, or -N(R)-; R represents an alkyl group having 1-10 carbon atoms; Ar1 and Ar2 each independently represent a divalent aromatic group having 6-14 carbon atoms; and the dashed lines represent bonds.)]

Description

電子デバイス用基板製造用ポリヒドロキシアミド組成物、及びポリベンゾオキサゾール樹脂フィルムPolyhydroxyamide composition for manufacturing substrates for electronic devices, and polybenzoxazole resin film
 本発明は、電子デバイス用基板製造用ポリヒドロキシアミド組成物、及び該組成物から得られるポリベンゾオキサゾール樹脂フィルムに関する。 The present invention relates to a polyhydroxyamide composition for producing a substrate for an electronic device, and a polybenzoxazole resin film obtained from the composition.
 近年、電子機器の小型化、高性能化が進むなか、電子機器に用いる部材にも、軽さ、耐熱性等の特性が求められている。特に、有機エレクトロルミネッセンス(EL)ディスプレイ等の分野では、ガラス部材がその機器の重量の大半を占める場合があるだけでなく、市場においてフレキシブルディスプレイに対する期待がますます高まってきていることから、ガラスに代わる、柔軟性を備えた新材料を求める要望は大きい。 In recent years, with the progress of miniaturization and high performance of electronic devices, characteristics such as lightness and heat resistance are also demanded for members used in electronic devices. In particular, in the field of organic electroluminescence (EL) displays, glass members may occupy most of the weight of the equipment, and the expectations for flexible displays in the market are increasing. There is a great demand for alternative materials with flexibility.
 ガラスは、優れた耐熱性と低い線膨張係数を有するため、電子機器の部材として用いられる。それゆえに、ガラスに代わる新材料にも、優れた耐熱性と低い線膨張係数が必要となる。とりわけ、高精細なディスプレイ等の製造プロセスにおいては、高い寸法精度を維持したまま、200℃以上、場合によっては400℃以上もの高温で処理をする必要があることから、基板等の部材は、これらの特性面で優れていることが必須となる。 Glass has excellent heat resistance and low coefficient of linear expansion, so it is used as a member for electronic equipment. Therefore, excellent heat resistance and a low coefficient of linear expansion are also required for new materials replacing glass. In particular, in a manufacturing process of a high-definition display or the like, it is necessary to process at a high temperature of 200 ° C. or higher, and in some cases 400 ° C. or higher while maintaining high dimensional accuracy. It is essential to be excellent in terms of characteristics.
 この観点から、ポリイミド樹脂は、耐熱性が高く難燃性で電気絶縁性に優れるため、新材料の候補として注目を集めている。しかしながら、一般的に用いられるポリイミド樹脂は、高温処理下でも高い寸法精度を維持できる程度まで十分に低い線膨張係数を有しておらず、そのため、ディスプレイの製造プロセスでは、樹脂が縮小(又は膨張)してしまうほどの高温での処理ができない場合があった。このような事情に鑑み、ポリイミド樹脂が縮小(又は膨張)する温度での熱処理を含まない表示素子の製造方法に関する技術や、特徴的な酸二水物を用いた、低線膨張係数を有するポリイミド樹脂に関する技術が提案されている(特許文献1、2)。 From this point of view, polyimide resins are attracting attention as candidates for new materials because of their high heat resistance, flame retardancy and excellent electrical insulation. However, generally used polyimide resins do not have a sufficiently low linear expansion coefficient to the extent that high dimensional accuracy can be maintained even under high temperature processing, and therefore, in the display manufacturing process, the resin shrinks (or expands). ) May not be possible at high temperatures. In view of such circumstances, a polyimide having a low linear expansion coefficient using a technology related to a manufacturing method of a display element that does not include heat treatment at a temperature at which the polyimide resin shrinks (or expands), and a characteristic acid dihydrate. Technologies related to resins have been proposed (Patent Documents 1 and 2).
 しかし、このような技術を用いた場合であっても、製造プロセスが複雑になる、汎用性に乏しい高価な酸二水物を用いなければならない等の問題があるだけでなく、フレキシブルディスプレイ等の用途に用いるのに十分な柔軟性を実現することが困難である。このため、従来のポリイミド樹脂では、これらの点を解決することは困難であり、代替材料が必要であった。 However, even when such a technique is used, there are problems such as complicated manufacturing processes and the need to use expensive acid dihydrates with poor versatility, as well as flexible displays and the like. It is difficult to achieve sufficient flexibility for use in applications. For this reason, it is difficult to solve these points with the conventional polyimide resin, and an alternative material is required.
 一方、ポリイミドと同様以上の耐熱性と低線膨張係数を有する材料として、ポリベンゾオキサゾール樹脂がある(非特許文献1)。しかし、ポリベンゾオキサゾールの前駆体であるポリヒドロキシアミドは、ポリイミドの前駆体であるポリアミック酸より溶解性が乏しく、合成中に析出する、又は精製後の再溶解が困難であるといった問題がある。このため、溶解性を付与するため、側鎖ヒドロキシ基をシリル基で保護する、溶媒にヘキサメチルリン酸トリアミドを用いる、又はポリアミック酸との共重合を行う技術が報告されている(非特許文献1~3、特許文献3)。しかし、シリル化剤は高価であり、ヘキサメチルリン酸トリアミドは高い毒性を有するため産業上の利用性に乏しい。また、ポリアミック酸との共重合では、耐熱性に劣るといった欠点があった。 On the other hand, there is polybenzoxazole resin as a material having heat resistance and low linear expansion coefficient equal to or higher than those of polyimide (Non-patent Document 1). However, polyhydroxyamide, which is a precursor of polybenzoxazole, has a problem that it is less soluble than polyamic acid, which is a precursor of polyimide, and precipitates during synthesis or is difficult to redissolve after purification. For this reason, in order to impart solubility, a technique for protecting a side chain hydroxy group with a silyl group, using hexamethylphosphoric triamide as a solvent, or performing copolymerization with a polyamic acid has been reported (Non-Patent Literature). 1 to 3, Patent Document 3). However, silylating agents are expensive, and hexamethylphosphoric triamide is highly toxic and therefore lacks industrial applicability. Further, the copolymerization with polyamic acid has a drawback of poor heat resistance.
特開2001-356370号公報JP 2001-356370 A 国際公開第2008/047591号International Publication No. 2008/047591 特開2009-109541号公報JP 2009-109541 A
 本発明は、前記事情に鑑みてなされたものであり、耐熱性が高いポリベンゾオキサゾール樹脂フィルムを与え得るポリヒドロキシアミド組成物、及び該組成物から得られるポリベンゾオキサゾール樹脂フィルムを提供することを目的とする。 The present invention has been made in view of the above circumstances, and provides a polyhydroxyamide composition capable of providing a polybenzoxazole resin film having high heat resistance, and a polybenzoxazole resin film obtained from the composition. Objective.
 本発明者らは、前記目的を達成するため鋭意検討を重ねた結果、後述する式(1)で表される単位及び下記式(2)で表される単位を含むポリヒドロキシアミド、及び(B)有機溶媒を含む組成物から得られるポリベンゾオキサゾール樹脂フィルムが、耐熱性が高く、線膨張係数が小さいことを見出し、本発明を完成させた。 As a result of intensive studies to achieve the above object, the present inventors have found that a polyhydroxyamide containing a unit represented by the following formula (1) and a unit represented by the following formula (2), and (B ) A polybenzoxazole resin film obtained from a composition containing an organic solvent was found to have high heat resistance and a low linear expansion coefficient, and the present invention was completed.
 したがって、本発明は、下記電子デバイス用基板製造用ポリヒドロキシアミド組成物、及びポリベンゾオキサゾール樹脂フィルムを提供する。
1.(A)下記式(1)で表される単位及び下記式(2)で表される単位を含むポリヒドロキシアミド、及び(B)有機溶媒を含む電子デバイス用基板製造用ポリヒドロキシアミド組成物。
Figure JPOXMLDOC01-appb-C000020
[式中、X1は、窒素原子と結合する炭素原子に隣接する炭素原子上にヒドロキシ基を有するビフェニルジイル基を表し;Y1は、炭素数6~14の2価の芳香族基を表し;Y2は、下記式(3)で表される基を表し;n及びmは、0<n<100、0<m<100、及び0<n+m≦100を満たす正数を表す。
Figure JPOXMLDOC01-appb-C000021
(式中、Z1は、-O-、-NH-又は-N(R)-を表し、Rは、炭素数1~10のアルキル基を表し;Ar1及びAr2は、互いに独立して、炭素数6~14の2価の芳香族基を表し;破線は、結合手を表す。)]
2.X1が、下記式(4)で表される基である1の電子デバイス用基板製造用ポリヒドロキシアミド組成物。
Figure JPOXMLDOC01-appb-C000022
(式中、R1~R6は、互いに独立して、水素原子、ハロゲン原子、ニトロ基、シアノ基、又はハロゲン原子で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;破線は、結合手を表す。)
3.X1が、下記式(4')で表される基である2の電子デバイス用基板製造用ポリヒドロキシアミド組成物。
Figure JPOXMLDOC01-appb-C000023
(式中、破線は、結合手を表す。)
4.Y1が下記式(5)で表される基であり、Y2が下記式(6)で表される基である1~3のいずれかの電子デバイス用基板製造用ポリヒドロキシアミド組成物。
Figure JPOXMLDOC01-appb-C000024
(式中、Z1は、前記と同じであり;R7~R18は、互いに独立して、水素原子、ヒドロキシ基、ハロゲン原子、ニトロ基、シアノ基、又はハロゲン原子で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;破線は、結合手を表す。)
5.R7~R18が、水素原子である4の電子デバイス用基板製造用ポリヒドロキシアミド組成物。
6.Y2が、下記式(7)、(8)又は(9)で表される基である1~5のいずれかの電子デバイス用基板製造用ポリヒドロキシアミド組成物。
Figure JPOXMLDOC01-appb-C000025
(式中、破線は、結合手を表す。)
7.n及びmが、5≦n≦25、75≦m≦95、及び80≦n+m≦100を満たす正数である1~6のいずれかの電子デバイス用基板製造用ポリヒドロキシアミド組成物。
8.(B)有機溶媒が、下記式(S1)で表されるアミド類、下記式(S2)で表されるアミド類及び下記式(S3)で表されるアミド類から選ばれる少なくとも1つを含む1~7のいずれかの電子デバイス用基板用ポリヒドロキシアミド組成物。
Figure JPOXMLDOC01-appb-C000026
(式中、R21及びR22は、互いに独立して、炭素数1~10のアルキル基を表す。R23は、水素原子、又は炭素数1~10のアルキル基を表す。aは、自然数を表す。)
9.1~8のいずれかの電子デバイス用基板製造用ポリヒドロキシアミド組成物を基材上に塗布する工程、及び加熱して溶媒を蒸発させ、ポリヒドロキシアミドを閉環させる工程を含む電子デバイス用基板用ポリベンゾオキサゾール樹脂フィルムの製造方法。
10.1~8のいずれかのポリヒドロキシアミド組成物から得られる電子デバイス用基板用ポリベンゾオキサゾール樹脂フィルム。
11.5%重量減少温度が600℃以上であり、50~400℃の線膨張係数が8ppm/℃以下である10の電子デバイス用基板用ポリベンゾオキサゾール樹脂フィルム。
12.10又は11の電子デバイス用基板用ポリベンゾオキサゾール樹脂フィルムを基板として備える電子デバイス。
13.有機EL素子である12の電子デバイス。
14.下記式(10)で表される単位及び下記式(11)で表される単位を含むポリヒドロキシアミド。
Figure JPOXMLDOC01-appb-C000027
[式中、X1は、窒素原子と結合する炭素原子に隣接する炭素原子上にヒドロキシ基を有するビフェニルジイル基を表し;Y1は、炭素数6~14の2価の芳香族基を表し;Y2は、下記式(3)で表される基を表し;n及びmは、5≦n≦25、75≦m≦95、及び80≦n+m≦100を満たす正数を表す。
Figure JPOXMLDOC01-appb-C000028
(式中、Z1は、-O-、-NH-又は-N(R)-を表し、Rは、炭素数1~10のアルキル基を表し;Ar1及びAr2は、互いに独立して、炭素数6~14の2価の芳香族基を表し;破線は、結合手を表す。)]
15.X1が、下記式(4)で表される基である14のポリヒドロキシアミド。
Figure JPOXMLDOC01-appb-C000029
(式中、R1~R6は、互いに独立して、水素原子、ハロゲン原子、ニトロ基、シアノ基、又はハロゲン原子で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;破線は、結合手を表す。)
16.X1が、下記式(4')で表される基である15のポリヒドロキシアミド。
Figure JPOXMLDOC01-appb-C000030
(式中、破線は、結合手を表す。)
17.Y1が下記式(5)で表される基であり、Y2が下記式(6)で表される基である14~16のいずれかのポリヒドロキシアミド。
Figure JPOXMLDOC01-appb-C000031
(式中、Z1は、前記と同じであり;R7~R18は、互いに独立して、水素原子、ヒドロキシ基、ハロゲン原子、ニトロ基、シアノ基、又はハロゲン原子で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;破線は、結合手を表す。)
18.R7~R18が、水素原子である17のポリヒドロキシアミド。
19.Y2が、下記式(7)、(8)又は(9)で表される基である14~18のいずれかのポリヒドロキシアミド。
Figure JPOXMLDOC01-appb-C000032
(式中、破線は、結合手を表す。)
20.下記式(12)で表されるジアミン化合物、前記ジアミン化合物1モルに対して0.05~0.25モルとなる量の下記式(13)で表されるジカルボン酸誘導体、及び前記ジアミン化合物1モルに対して0.75~0.95モルとなる量の下記式(14)で表されるジカルボン酸誘導体を、溶媒中、触媒の存在下で縮合重合させる、ポリヒドロキシアミドの製造方法。
Figure JPOXMLDOC01-appb-C000033
[式中、X1は、窒素原子と結合する炭素原子に隣接する炭素原子上にヒドロキシ基を有するビフェニルジイル基を表し;Y1は、炭素数6~14の2価の芳香族基を表し;Y2は、下記式(3)で表される基を表す。
Figure JPOXMLDOC01-appb-C000034
(式中、Z1は、-O-、-NH-又は-N(R)-を表し、Rは、炭素数1~10のアルキル基を表し;Ar1及びAr2は、互いに独立して、炭素数6~14の2価の芳香族基を表し;破線は、結合手を表す。)]
21.X1が、下記式(4)で表される基である20のポリヒドロキシアミドの製造方法。
Figure JPOXMLDOC01-appb-C000035
(式中、R1~R6は、互いに独立して、水素原子、ハロゲン原子、ニトロ基、シアノ基、又はハロゲン原子で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;破線は、結合手を表す。)
22.X1が、下記式(4')で表される基である21のポリヒドロキシアミドの製造方法。
Figure JPOXMLDOC01-appb-C000036
(式中、破線は、結合手を表す。)
23.Y1が下記式(5)で表される基であり、Y2が下記式(6)で表される基である20~22のいずれかのポリヒドロキシアミドの製造方法。
Figure JPOXMLDOC01-appb-C000037
(式中、Z1は、前記と同じであり;R7~R18は、互いに独立して、水素原子、ヒドロキシ基、ハロゲン原子、ニトロ基、シアノ基、又はハロゲン原子で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;破線は、結合手を表す。)
24.R7~R18が、水素原子である23のポリヒドロキシアミドの製造方法。
25.Y2が、下記式(7)、(8)又は(9)で表される基である20~24のいずれかのポリヒドロキシアミドの製造方法。
Figure JPOXMLDOC01-appb-C000038
(式中、破線は、結合手を表す。)
Accordingly, the present invention provides the following polyhydroxyamide composition for producing a substrate for an electronic device and a polybenzoxazole resin film.
1. (A) A polyhydroxyamide composition for producing a substrate for electronic devices, comprising a unit represented by the following formula (1) and a polyhydroxyamide containing a unit represented by the following formula (2), and (B) an organic solvent.
Figure JPOXMLDOC01-appb-C000020
[Wherein, X 1 represents a biphenyldiyl group having a hydroxy group on the carbon atom adjacent to the carbon atom bonded to the nitrogen atom; Y 1 represents a divalent aromatic group having 6 to 14 carbon atoms] Y 2 represents a group represented by the following formula (3); n and m represent positive numbers satisfying 0 <n <100, 0 <m <100, and 0 <n + m ≦ 100.
Figure JPOXMLDOC01-appb-C000021
(Wherein Z 1 represents —O—, —NH— or —N (R) —, R represents an alkyl group having 1 to 10 carbon atoms; Ar 1 and Ar 2 are independently of each other; Represents a divalent aromatic group having 6 to 14 carbon atoms; a broken line represents a bond.)]
2. A polyhydroxyamide composition for producing a substrate for an electronic device according to 1, wherein X 1 is a group represented by the following formula (4):
Figure JPOXMLDOC01-appb-C000022
(Wherein R 1 to R 6 are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, or an alkyl group having 1 to 20 carbon atoms which may be substituted with a halogen atom, Represents an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms; a broken line represents a bond.)
3. A polyhydroxyamide composition for producing a substrate for an electronic device according to 2, wherein X 1 is a group represented by the following formula (4 ′).
Figure JPOXMLDOC01-appb-C000023
(In the formula, a broken line represents a bond.)
4). The polyhydroxyamide composition for producing a substrate for an electronic device according to any one of 1 to 3, wherein Y 1 is a group represented by the following formula (5) and Y 2 is a group represented by the following formula (6).
Figure JPOXMLDOC01-appb-C000024
Wherein Z 1 is as defined above; R 7 to R 18 may be independently of each other substituted with a hydrogen atom, a hydroxy group, a halogen atom, a nitro group, a cyano group, or a halogen atom. Preferably represents an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms; A broken line represents a bond.)
5. 4. A polyhydroxyamide composition for producing a substrate for an electronic device, wherein R 7 to R 18 are hydrogen atoms.
6). The polyhydroxyamide composition for producing a substrate for an electronic device according to any one of 1 to 5, wherein Y 2 is a group represented by the following formula (7), (8) or (9):
Figure JPOXMLDOC01-appb-C000025
(In the formula, a broken line represents a bond.)
7). The polyhydroxyamide composition for producing a substrate for an electronic device according to any one of 1 to 6, wherein n and m are positive numbers satisfying 5 ≦ n ≦ 25, 75 ≦ m ≦ 95, and 80 ≦ n + m ≦ 100.
8). (B) The organic solvent contains at least one selected from amides represented by the following formula (S1), amides represented by the following formula (S2), and amides represented by the following formula (S3). The polyhydroxyamide composition for a substrate for electronic devices according to any one of 1 to 7.
Figure JPOXMLDOC01-appb-C000026
(In the formula, R 21 and R 22 each independently represent an alkyl group having 1 to 10 carbon atoms. R 23 represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms. A is a natural number. Represents.)
9. An electronic device comprising: a step of applying a polyhydroxyamide composition for producing a substrate for an electronic device according to any one of 1 to 8 on a substrate; and a step of heating to evaporate a solvent and ring-closing the polyhydroxyamide A method for producing a polybenzoxazole resin film for a substrate.
10. A polybenzoxazole resin film for an electronic device substrate obtained from the polyhydroxyamide composition according to any one of 10.1 to 8.
10. A polybenzoxazole resin film for an electronic device substrate, having a 11.5% weight loss temperature of 600 ° C. or more and a linear expansion coefficient of 50 to 400 ° C. of 8 ppm / ° C. or less.
12. An electronic device comprising as a substrate the polybenzoxazole resin film for a substrate for electronic devices according to 10.10 or 11.
13. 12 electronic devices which are organic EL elements.
14 A polyhydroxyamide containing a unit represented by the following formula (10) and a unit represented by the following formula (11).
Figure JPOXMLDOC01-appb-C000027
[Wherein, X 1 represents a biphenyldiyl group having a hydroxy group on the carbon atom adjacent to the carbon atom bonded to the nitrogen atom; Y 1 represents a divalent aromatic group having 6 to 14 carbon atoms] Y 2 represents a group represented by the following formula (3); n and m represent positive numbers satisfying 5 ≦ n ≦ 25, 75 ≦ m ≦ 95, and 80 ≦ n + m ≦ 100.
Figure JPOXMLDOC01-appb-C000028
(Wherein Z 1 represents —O—, —NH— or —N (R) —, R represents an alkyl group having 1 to 10 carbon atoms; Ar 1 and Ar 2 are independently of each other; Represents a divalent aromatic group having 6 to 14 carbon atoms; a broken line represents a bond.)]
15. 14 polyhydroxyamides wherein X 1 is a group represented by the following formula (4).
Figure JPOXMLDOC01-appb-C000029
(Wherein R 1 to R 6 are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, or an alkyl group having 1 to 20 carbon atoms which may be substituted with a halogen atom, Represents an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms; a broken line represents a bond.)
16. 15 polyhydroxyamides wherein X 1 is a group represented by the following formula (4 ′).
Figure JPOXMLDOC01-appb-C000030
(In the formula, a broken line represents a bond.)
17. The polyhydroxyamide according to any one of 14 to 16, wherein Y 1 is a group represented by the following formula (5), and Y 2 is a group represented by the following formula (6).
Figure JPOXMLDOC01-appb-C000031
Wherein Z 1 is as defined above; R 7 to R 18 may be independently of each other substituted with a hydrogen atom, a hydroxy group, a halogen atom, a nitro group, a cyano group, or a halogen atom. Preferably represents an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms; A broken line represents a bond.)
18. 17 polyhydroxyamides in which R 7 to R 18 are hydrogen atoms;
19. The polyhydroxyamide according to any one of 14 to 18, wherein Y 2 is a group represented by the following formula (7), (8) or (9).
Figure JPOXMLDOC01-appb-C000032
(In the formula, a broken line represents a bond.)
20. A diamine compound represented by the following formula (12), a dicarboxylic acid derivative represented by the following formula (13) in an amount of 0.05 to 0.25 mol relative to 1 mol of the diamine compound, and the diamine compound 1 A method for producing a polyhydroxyamide, comprising subjecting a dicarboxylic acid derivative represented by the following formula (14) in an amount of 0.75 to 0.95 mole to the mole to condensation polymerization in a solvent in the presence of a catalyst.
Figure JPOXMLDOC01-appb-C000033
[Wherein, X 1 represents a biphenyldiyl group having a hydroxy group on the carbon atom adjacent to the carbon atom bonded to the nitrogen atom; Y 1 represents a divalent aromatic group having 6 to 14 carbon atoms] ; Y 2 represents a group represented by the following formula (3).
Figure JPOXMLDOC01-appb-C000034
(Wherein Z 1 represents —O—, —NH— or —N (R) —, R represents an alkyl group having 1 to 10 carbon atoms; Ar 1 and Ar 2 are independently of each other; Represents a divalent aromatic group having 6 to 14 carbon atoms; a broken line represents a bond.)]
21. A method for producing 20 polyhydroxyamides, wherein X 1 is a group represented by the following formula (4).
Figure JPOXMLDOC01-appb-C000035
(Wherein R 1 to R 6 are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, or an alkyl group having 1 to 20 carbon atoms which may be substituted with a halogen atom, Represents an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms; a broken line represents a bond.)
22. 21. A method for producing a polyhydroxyamide according to 21, wherein X 1 is a group represented by the following formula (4 ′).
Figure JPOXMLDOC01-appb-C000036
(In the formula, a broken line represents a bond.)
23. A method for producing a polyhydroxyamide according to any one of 20 to 22, wherein Y 1 is a group represented by the following formula (5) and Y 2 is a group represented by the following formula (6).
Figure JPOXMLDOC01-appb-C000037
Wherein Z 1 is as defined above; R 7 to R 18 may be independently of each other substituted with a hydrogen atom, a hydroxy group, a halogen atom, a nitro group, a cyano group, or a halogen atom. Preferably represents an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms; A broken line represents a bond.)
24. A method for producing a polyhydroxyamide of 23, wherein R 7 to R 18 are hydrogen atoms.
25. A process for producing a polyhydroxyamide according to any one of 20 to 24, wherein Y 2 is a group represented by the following formula (7), (8) or (9).
Figure JPOXMLDOC01-appb-C000038
(In the formula, a broken line represents a bond.)
 本発明のポリヒドロキシアミド組成物から得られるポリベンゾオキサゾール樹脂フィルムは、耐熱性が高く、線膨張係数が小さい。そのため、前記ポリベンゾオキサゾール樹脂フィルムは、電子デバイス用基板として有用である。 The polybenzoxazole resin film obtained from the polyhydroxyamide composition of the present invention has high heat resistance and a low linear expansion coefficient. Therefore, the polybenzoxazole resin film is useful as a substrate for electronic devices.
[電子デバイス用基板製造用ポリヒドロキシアミド組成物]
 本発明の電子デバイス用基板製造用ポリヒドロキシアミド組成物は、(A)所定の構造のポリヒドロキシアミド、及び(B)有機溶媒を含むものである。
[Polyhydroxyamide composition for manufacturing substrates for electronic devices]
The polyhydroxyamide composition for producing a substrate for an electronic device of the present invention comprises (A) a polyhydroxyamide having a predetermined structure, and (B) an organic solvent.
[(A)ポリヒドロキシアミド]
 (A)成分であるポリヒドロキシアミドは、下記式(1)で表される単位及び下記式(2)で表される単位を含むものである。
Figure JPOXMLDOC01-appb-C000039
[(A) Polyhydroxyamide]
The polyhydroxyamide as the component (A) includes a unit represented by the following formula (1) and a unit represented by the following formula (2).
Figure JPOXMLDOC01-appb-C000039
 式中、X1は、窒素原子と結合する炭素原子に隣接する炭素原子上にヒドロキシ基を有するビフェニルジイル基である。 In the formula, X 1 is a biphenyldiyl group having a hydroxy group on the carbon atom adjacent to the carbon atom bonded to the nitrogen atom.
 X1として具体的には、下記式(4)で表される基が好ましい。
Figure JPOXMLDOC01-appb-C000040
Specifically, X 1 is preferably a group represented by the following formula (4).
Figure JPOXMLDOC01-appb-C000040
 式中、R1~R6は、互いに独立して、水素原子、ハロゲン原子、ニトロ基、シアノ基、又はハロゲン原子で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表す。破線は、結合手を表す。 In the formula, R 1 to R 6 are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, or an alkyl group having 1 to 20 carbon atoms which may be substituted with a halogen atom, or 2 carbon atoms Represents an alkenyl group having 20 carbon atoms, an alkynyl group having 2-20 carbon atoms, an aryl group having 6-20 carbon atoms, or a heteroaryl group having 2-20 carbon atoms. A broken line represents a bond.
 前記アルキル基は、直鎖状、分岐状、環状のいずれでもよく、その具体例としては、メチル基、エチル基、n-プロピル基、イソプロピル基、シクロプロピル基、n-ブチル基、イソブチル基、sec-ブチル基、tert-ブチル基、シクロブチル基、1-メチル-シクロプロピル基、2-メチル-シクロプロピル基、n-ペンチル基、1-メチル-n-ブチル基、2-メチル-n-ブチル基、3-メチル-n-ブチル基、1,1-ジメチル-n-プロピル基、1,2-ジメチル-n-プロピル基、2,2-ジメチル-n-プロピル基、1-エチル-n-プロピル基、シクロペンチル基、1-メチル-シクロブチル基、2-メチル-シクロブチル基、3-メチル-シクロブチル基、1,2-ジメチル-シクロプロピル基、2,3-ジメチル-シクロプロピル基、1-エチル-シクロプロピル基、2-エチル-シクロプロピル基、n-ヘキシル基、1-メチル-n-ペンチル基、2-メチル-n-ペンチル基、3-メチル-n-ペンチル基、4-メチル-n-ペンチル基、1,1-ジメチル-n-ブチル基、1,2-ジメチル-n-ブチル基、1,3-ジメチル-n-ブチル基、2,2-ジメチル-n-ブチル基、2,3-ジメチル-n-ブチル基、3,3-ジメチル-n-ブチル基、1-エチル-n-ブチル基、2-エチル-n-ブチル基、1,1,2-トリメチル-n-プロピル基、1,2,2-トリメチル-n-プロピル基、1-エチル-1-メチル-n-プロピル基、1-エチル-2-メチル-n-プロピル基、シクロヘキシル基、1-メチル-シクロペンチル基、2-メチル-シクロペンチル基、3-メチル-シクロペンチル基、1-エチル-シクロブチル基、2-エチル-シクロブチル基、3-エチル-シクロブチル基、1,2-ジメチル-シクロブチル基、1,3-ジメチル-シクロブチル基、2,2-ジメチル-シクロブチル基、2,3-ジメチル-シクロブチル基、2,4-ジメチル-シクロブチル基、3,3-ジメチル-シクロブチル基、1-n-プロピル-シクロプロピル基、2-n-プロピル-シクロプロピル基、1-イソプロピル-シクロプロピル基、2-イソプロピル-シクロプロピル基、1,2,2-トリメチル-シクロプロピル基、1,2,3-トリメチル-シクロプロピル基、2,2,3-トリメチル-シクロプロピル基、1-エチル-2-メチル-シクロプロピル基、2-エチル-1-メチル-シクロプロピル基、2-エチル-2-メチル-シクロプロピル基、2-エチル-3-メチル-シクロプロピル基等が挙げられる。 The alkyl group may be linear, branched or cyclic, and specific examples thereof include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, a cyclopropyl group, an n-butyl group, an isobutyl group, sec-butyl group, tert-butyl group, cyclobutyl group, 1-methyl-cyclopropyl group, 2-methyl-cyclopropyl group, n-pentyl group, 1-methyl-n-butyl group, 2-methyl-n-butyl Group, 3-methyl-n-butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl-n-propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n- Propyl group, cyclopentyl group, 1-methyl-cyclobutyl group, 2-methyl-cyclobutyl group, 3-methyl-cyclobutyl group, 1,2-dimethyl-cyclopropyl group, 2,3-dimethyl-silane Ropropyl group, 1-ethyl-cyclopropyl group, 2-ethyl-cyclopropyl group, n-hexyl group, 1-methyl-n-pentyl group, 2-methyl-n-pentyl group, 3-methyl-n-pentyl group 4-methyl-n-pentyl group, 1,1-dimethyl-n-butyl group, 1,2-dimethyl-n-butyl group, 1,3-dimethyl-n-butyl group, 2,2-dimethyl-n -Butyl group, 2,3-dimethyl-n-butyl group, 3,3-dimethyl-n-butyl group, 1-ethyl-n-butyl group, 2-ethyl-n-butyl group, 1,1,2- Trimethyl-n-propyl group, 1,2,2-trimethyl-n-propyl group, 1-ethyl-1-methyl-n-propyl group, 1-ethyl-2-methyl-n-propyl group, cyclohexyl group, 1 -Methyl-cyclopentyl group, 2-methyl-cyclopentyl Group, 3-methyl-cyclopentyl group, 1-ethyl-cyclobutyl group, 2-ethyl-cyclobutyl group, 3-ethyl-cyclobutyl group, 1,2-dimethyl-cyclobutyl group, 1,3-dimethyl-cyclobutyl group, 2, 2-dimethyl-cyclobutyl group, 2,3-dimethyl-cyclobutyl group, 2,4-dimethyl-cyclobutyl group, 3,3-dimethyl-cyclobutyl group, 1-n-propyl-cyclopropyl group, 2-n-propyl- Cyclopropyl group, 1-isopropyl-cyclopropyl group, 2-isopropyl-cyclopropyl group, 1,2,2-trimethyl-cyclopropyl group, 1,2,3-trimethyl-cyclopropyl group, 2,2,3- Trimethyl-cyclopropyl group, 1-ethyl-2-methyl-cyclopropyl group, 2-ethyl-1-methyl-cyclopropyl group, 2-ethyl Examples thereof include a til-2-methyl-cyclopropyl group and a 2-ethyl-3-methyl-cyclopropyl group.
 前記アルケニル基は、直鎖状、分岐状、環状のいずれでもよく、その具体例としては、エテニル基、n-1-プロペニル基、n-2-プロペニル基、1-メチルエテニル基、n-1-ブテニル基、n-2-ブテニル基、n-3-ブテニル基、2-メチル-1-プロペニル基、2-メチル-2-プロペニル基、1-エチルエテニル基、1-メチル-1-プロペニル基、1-メチル-2-プロペニル基、n-1-ペンテニル基、n-1-デセニル基、n-1-エイコセニル基等が挙げられる。 The alkenyl group may be linear, branched or cyclic, and specific examples thereof include ethenyl group, n-1-propenyl group, n-2-propenyl group, 1-methylethenyl group, n-1- Butenyl group, n-2-butenyl group, n-3-butenyl group, 2-methyl-1-propenyl group, 2-methyl-2-propenyl group, 1-ethylethenyl group, 1-methyl-1-propenyl group, 1 -Methyl-2-propenyl group, n-1-pentenyl group, n-1-decenyl group, n-1-eicocenyl group and the like.
 前記アルキニル基は、直鎖状、分岐状、環状のいずれでもよく、その具体例としては、エチニル基、n-1-プロピニル基、n-2-プロピニル基、n-1-ブチニル基、n-2-ブチニル基、n-3-ブチニル基、1-メチル-2-プロピニル基、n-1-ペンチニル基、n-2-ペンチニル基、n-3-ペンチニル基、n-4-ペンチニル基、1-メチル-n-ブチニル基、2-メチル-n-ブチニル基、3-メチル-n-ブチニル基、1,1-ジメチル-n-プロピニル基、n-1-ヘキシニル基、n-1-デシニル基、n-1-ペンタデシニル基、n-1-エイコシニル基等が挙げられる。 The alkynyl group may be linear, branched or cyclic, and specific examples thereof include ethynyl group, n-1-propynyl group, n-2-propynyl group, n-1-butynyl group, n- 2-butynyl group, n-3-butynyl group, 1-methyl-2-propynyl group, n-1-pentynyl group, n-2-pentynyl group, n-3-pentynyl group, n-4-pentynyl group, 1 -Methyl-n-butynyl group, 2-methyl-n-butynyl group, 3-methyl-n-butynyl group, 1,1-dimethyl-n-propynyl group, n-1-hexynyl group, n-1-decynyl group N-1-pentadecynyl group, n-1-eicosinyl group and the like.
 前記アリール基の具体例としては、フェニル基、1-ナフチル基、2-ナフチル基、1-アントリル基、2-アントリル基、9-アントリル基、1-フェナントリル基、2-フェナントリル基、3-フェナントリル基、4-フェナントリル基、9-フェナントリル基等が挙げられる。 Specific examples of the aryl group include phenyl group, 1-naphthyl group, 2-naphthyl group, 1-anthryl group, 2-anthryl group, 9-anthryl group, 1-phenanthryl group, 2-phenanthryl group, 3-phenanthryl group. Group, 4-phenanthryl group, 9-phenanthryl group and the like.
 前記ヘテロアリール基の具体例としては、2-チエニル基、3-チエニル基、2-フラニル基、3-フラニル基、2-オキサゾリル基、4-オキサゾリル基、5-オキサゾリル基、3-イソオキサゾリル基、4-イソオキサゾリル基、5-イソオキサゾリル基、2-チアゾリル基、4-チアゾリル基、5-チアゾリル基、3-イソチアゾリル基、4-イソチアゾリル基、5-イソチアゾリル基、2-イミダゾリル基、4-イミダゾリル基、2-ピリジル基、3-ピリジル基、4-ピリジル基等が挙げられる。 Specific examples of the heteroaryl group include 2-thienyl group, 3-thienyl group, 2-furanyl group, 3-furanyl group, 2-oxazolyl group, 4-oxazolyl group, 5-oxazolyl group, 3-isoxazolyl group, 4-isoxazolyl group, 5-isoxazolyl group, 2-thiazolyl group, 4-thiazolyl group, 5-thiazolyl group, 3-isothiazolyl group, 4-isothiazolyl group, 5-isothiazolyl group, 2-imidazolyl group, 4-imidazolyl group, Examples include 2-pyridyl group, 3-pyridyl group, 4-pyridyl group and the like.
 これらのうち、R1~R6としては、水素原子、メチル基、ハロゲン原子、フェニル基が好ましく、水素原子、メチル基、ハロゲン原子がより好ましく、水素原子が最も好ましい。 Of these, R 1 to R 6 are preferably a hydrogen atom, a methyl group, a halogen atom, or a phenyl group, more preferably a hydrogen atom, a methyl group, or a halogen atom, and most preferably a hydrogen atom.
 X1としては、下記式(4')で表される基が最も好ましい。
Figure JPOXMLDOC01-appb-C000041
(式中、破線は、結合手を表す。)
X 1 is most preferably a group represented by the following formula (4 ′).
Figure JPOXMLDOC01-appb-C000041
(In the formula, a broken line represents a bond.)
 式(1)中、Y1は、炭素数6~14の2価の芳香族基を表す。式(2)中、Y2は、下記式(3)で表される基を表す。
Figure JPOXMLDOC01-appb-C000042
In formula (1), Y 1 represents a divalent aromatic group having 6 to 14 carbon atoms. In formula (2), Y 2 represents a group represented by the following formula (3).
Figure JPOXMLDOC01-appb-C000042
 式(3)中、Z1は、-O-、-NH-又は-N(R)-を表し、Rは、炭素数1~10のアルキル基を表す。Rで表されるアルキル基として具体的には、前述したものと同様のものが挙げられる。Z1としては、-O-、-NH-が好ましい。 In the formula (3), Z 1 represents —O—, —NH— or —N (R) —, and R represents an alkyl group having 1 to 10 carbon atoms. Specific examples of the alkyl group represented by R include those described above. Z 1 is preferably —O— or —NH—.
 式(3)中、Ar1及びAr2は、互いに独立して、炭素数6~14の2価の芳香族基を表す。 In formula (3), Ar 1 and Ar 2 each independently represent a divalent aromatic group having 6 to 14 carbon atoms.
 Y1、Ar1及びAr2で表される2価の芳香族基としては、フェニレン基、ナフチレン基、アントラセンジイル基、フェナントレンジイル基、ビフェニルジイル基等が挙げられ、これらの基の水素原子の一部又は全部が、置換基で置換されていてもよい。 Examples of the divalent aromatic group represented by Y 1 , Ar 1 and Ar 2 include a phenylene group, a naphthylene group, an anthracenediyl group, a phenanthrene diyl group, a biphenyldiyl group, and the like. A part or all of them may be substituted with a substituent.
 Y1としては、下記式(5)で表される基が好ましく、Y2としては下記式(6)で表される基が好ましい。
Figure JPOXMLDOC01-appb-C000043
Y 1 is preferably a group represented by the following formula (5), and Y 2 is preferably a group represented by the following formula (6).
Figure JPOXMLDOC01-appb-C000043
 式中、Z1は、前記と同じである。R7~R18は、互いに独立して、水素原子、ヒドロキシ基、ハロゲン原子、ニトロ基、シアノ基、又はハロゲン原子で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表す。破線は、結合手を表す。前記アルキル基、アルケニル基、アルキニル基、アリール基及びヘテロアリール基としては、前述したものと同様のものが挙げられる。 In the formula, Z 1 is the same as described above. R 7 to R 18 are each independently a hydrogen atom, a hydroxy group, a halogen atom, a nitro group, a cyano group, or an alkyl group having 1 to 20 carbon atoms which may be substituted with a halogen atom, or 2 carbon atoms Represents an alkenyl group having 20 carbon atoms, an alkynyl group having 2-20 carbon atoms, an aryl group having 6-20 carbon atoms, or a heteroaryl group having 2-20 carbon atoms. A broken line represents a bond. Examples of the alkyl group, alkenyl group, alkynyl group, aryl group and heteroaryl group are the same as those described above.
 R7~R18としては、水素原子、炭素数1~20のアルキル基、ハロゲン原子、フェニル基が好ましく、水素原子、炭素数1~20のアルキル基、ハロゲン原子がより好ましく、水素原子、メチル基、ハロゲン原子がより一層好ましく、水素原子が最も好ましい。 R 7 to R 18 are preferably a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a halogen atom or a phenyl group, more preferably a hydrogen atom, an alkyl group having 1 to 20 carbon atoms or a halogen atom, a hydrogen atom, methyl A group and a halogen atom are more preferable, and a hydrogen atom is most preferable.
 Y2としては、下記式(7)、(8)又は(9)で表される基が最も好ましい。
Figure JPOXMLDOC01-appb-C000044
(式中、破線は、結合手を表す。)
Y 2 is most preferably a group represented by the following formula (7), (8) or (9).
Figure JPOXMLDOC01-appb-C000044
(In the formula, a broken line represents a bond.)
 式(1)及び(2)中、n及びmは、0<n<100、0<m<100、及び0<n+m≦100を満たす正数を表す。n及びmは、溶解性と耐熱性の点から、5≦n≦25、75≦m≦95、及び80≦n+m≦100を満たす正数が好ましく、10≦n≦25、75≦m≦90、及び85≦n+m≦100を満たす正数がより好ましく、20≦n≦25、75≦m≦80、及び95≦n+m≦100を満たす正数がより一層好ましい。 In the formulas (1) and (2), n and m represent positive numbers that satisfy 0 <n <100, 0 <m <100, and 0 <n + m ≦ 100. n and m are preferably positive numbers satisfying 5 ≦ n ≦ 25, 75 ≦ m ≦ 95, and 80 ≦ n + m ≦ 100 from the viewpoint of solubility and heat resistance, and 10 ≦ n ≦ 25, 75 ≦ m ≦ 90. And positive numbers satisfying 85 ≦ n + m ≦ 100 are more preferable, and positive numbers satisfying 20 ≦ n ≦ 25, 75 ≦ m ≦ 80, and 95 ≦ n + m ≦ 100 are even more preferable.
 前記ポリヒドロキシアミドは、式(1)で表される単位及び式(2)で表される単位以外の単位(以下、その他の単位ともいう。)を含んでもよい。 The polyhydroxyamide may include units other than the unit represented by the formula (1) and the unit represented by the formula (2) (hereinafter also referred to as other units).
 前記ポリヒドロキシアミドの重量平均分子量(Mw)は、5,000~1,000,000が好ましく、10,000~100,000がより好ましく、20,000~100,000がより一層好ましい。なお、本発明においてMwは、ゲルパーミエーションクロマトグラフィー(GPC)分析による標準ポリスチレン換算で得られる平均分子量である。 The weight average molecular weight (Mw) of the polyhydroxyamide is preferably 5,000 to 1,000,000, more preferably 10,000 to 100,000, and even more preferably 20,000 to 100,000. In the present invention, Mw is an average molecular weight obtained by standard polystyrene conversion by gel permeation chromatography (GPC) analysis.
[ポリヒドロキシアミドの製造方法]
 前記ポリヒドロキシアミドは、下記式(12)で表されるジアミン化合物、下記式(13)で表されるジカルボン酸誘導体、及び下記式(14)で表されるジカルボン酸誘導体を、溶媒中で、必要に応じて塩基の存在下で縮合重合させることによって製造することができる。
Figure JPOXMLDOC01-appb-C000045
(式中、X1、Y1及びY2は、前記と同じ。Halは、塩素原子、臭素原子、ヨウ素原子等のハロゲン原子を表す。)
[Production method of polyhydroxyamide]
The polyhydroxyamide contains a diamine compound represented by the following formula (12), a dicarboxylic acid derivative represented by the following formula (13), and a dicarboxylic acid derivative represented by the following formula (14) in a solvent, If necessary, it can be produced by condensation polymerization in the presence of a base.
Figure JPOXMLDOC01-appb-C000045
(In the formula, X 1 , Y 1 and Y 2 are the same as described above. Hal represents a halogen atom such as a chlorine atom, a bromine atom or an iodine atom.)
 このとき、式(13)で表されるジカルボン酸誘導体の使用量は、式(12)で表されるジアミン化合物1モルに対して、0.05~0.25モルが好ましく、0.10~0.25モルがより好ましく、0.20~0.25モルがより一層好ましい。また、式(14)で表されるジカルボン酸誘導体の使用量は、式(12)で表されるジアミン化合物1モルに対して、0.75~0.95モルが好ましく、0.75~0.90モルがより好ましく、0.75~0.80モルがより一層好ましい。 At this time, the amount of the dicarboxylic acid derivative represented by the formula (13) is preferably 0.05 to 0.25 mol, based on 1 mol of the diamine compound represented by the formula (12). 0.25 mol is more preferable, and 0.20 to 0.25 mol is even more preferable. The amount of the dicarboxylic acid derivative represented by the formula (14) is preferably from 0.75 to 0.95 mol, preferably from 0.75 to 0, per 1 mol of the diamine compound represented by the formula (12). .90 mol is more preferable, and 0.75 to 0.80 mol is even more preferable.
 前記縮合重合反応に用いる溶媒としては、N-メチル-2-ピロリドン(NMP)、N-エチル-2-ピロリドン、N,N-ジメチルホルムアミド、N,N-ジメチルアセトアミド、ヘキサメチルリン酸トリアミド、3-メトキシ-N,N-ジメチルプロパンアミド、3-ブトキシ-N,N-ジメチルプロパンアミド等が挙げられる。 Examples of the solvent used in the condensation polymerization reaction include N-methyl-2-pyrrolidone (NMP), N-ethyl-2-pyrrolidone, N, N-dimethylformamide, N, N-dimethylacetamide, hexamethylphosphoric triamide, 3 -Methoxy-N, N-dimethylpropanamide, 3-butoxy-N, N-dimethylpropanamide and the like.
 前記塩基としては、炭酸カリウム、水酸化カリウム、炭酸ナトリウム、水酸化ナトリウム、炭酸水素ナトリウム、ナトリウムエトキシド、酢酸ナトリウム、炭酸リチウム、水酸化リチウム、酸化リチウム、酢酸カリウム、酸化マグネシウム、酸化カルシウム、水酸化バリウム、リン酸三リチウム、リン酸三ナトリウム、リン酸三カリウム、フッ化セシウム、酸化アルミニウム、アンモニア、n-プロピルアミン、トリメチルアミン、トリエチルアミン、ジイソプロピルアミン、ジイソプロピルエチルアミン、N-メチルピペリジン、2,2,6,6-テトラメチル-N-メチルピペリジン、ピリジン、4-ジメチルアミノピリジン、N-メチルモルホリン等が挙げられる。塩基の添加量は、ジアミン化合物1モルに対して、0.5~3.0モルが好ましく、0.8~2.0モルがより好ましい。 Examples of the base include potassium carbonate, potassium hydroxide, sodium carbonate, sodium hydroxide, sodium hydrogen carbonate, sodium ethoxide, sodium acetate, lithium carbonate, lithium hydroxide, lithium oxide, potassium acetate, magnesium oxide, calcium oxide, water Barium oxide, trilithium phosphate, trisodium phosphate, tripotassium phosphate, cesium fluoride, aluminum oxide, ammonia, n-propylamine, trimethylamine, triethylamine, diisopropylamine, diisopropylethylamine, N-methylpiperidine, 2,2 , 6,6-tetramethyl-N-methylpiperidine, pyridine, 4-dimethylaminopyridine, N-methylmorpholine and the like. The amount of the base added is preferably 0.5 to 3.0 mol, more preferably 0.8 to 2.0 mol, relative to 1 mol of the diamine compound.
 反応温度は、用いる溶媒の融点から溶媒の沸点までの範囲で適宜設定すればよく、通常-20~100℃程度であり、好ましくは-10~100℃程度である。また、重合の反応時間は、通常1~48時間程度であり、好ましくは1~24時間程度である。反応終了後は、定法に従って後処理をし、必要に応じて再沈殿等の精製を施して目的物を得ることができる。 The reaction temperature may be appropriately set in the range from the melting point of the solvent to be used to the boiling point of the solvent, and is usually about −20 to 100 ° C., preferably about −10 to 100 ° C. The polymerization reaction time is usually about 1 to 48 hours, preferably about 1 to 24 hours. After completion of the reaction, the desired product can be obtained by post-treatment according to a conventional method and, if necessary, purification such as reprecipitation.
[(B)有機溶媒]
 (B)成分の有機溶媒としては、前記ポリヒドロキシアミドを溶解できるものである限り特に限定されないが、平坦性の高いポリベンゾオキサゾール樹脂フィルムを再現性よく得ることを考慮すると、下記式(S1)で表されるアミド類、下記式(S2)で表されるアミド類及び下記式(S3)で表されるアミド類から選ばれる少なくとも1種を含むものが好ましい。
Figure JPOXMLDOC01-appb-C000046
[(B) Organic solvent]
The organic solvent of component (B) is not particularly limited as long as it can dissolve the polyhydroxyamide, but considering that a highly flat polybenzoxazole resin film can be obtained with good reproducibility, the following formula (S1) And those containing at least one selected from amides represented by the following formula (S2) and amides represented by the following formula (S3).
Figure JPOXMLDOC01-appb-C000046
 式中、R21及びR22は、互いに独立して、炭素数1~10のアルキル基を表す。R23は、水素原子、又は炭素数1~10のアルキル基を表す。前記アルキル基としては、直鎖状、分岐状、環状のいずれでもよく、具体的には、メチル基、エチル基、n-プロピル基、イソプロピル基、シクロプロピル基、n-ブチル基、イソブチル基、sec-ブチル基、tert-ブチル基等が挙げられる。 In the formula, R 21 and R 22 each independently represent an alkyl group having 1 to 10 carbon atoms. R 23 represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms. The alkyl group may be linear, branched or cyclic, and specifically includes a methyl group, an ethyl group, an n-propyl group, an isopropyl group, a cyclopropyl group, an n-butyl group, an isobutyl group, Examples thereof include a sec-butyl group and a tert-butyl group.
 また、式(S1)中、aは、自然数を表すが、1~3の自然数が好ましく、1又は2がより好ましい。 In the formula (S1), a represents a natural number, preferably a natural number of 1 to 3, more preferably 1 or 2.
 式(S1)で表される有機溶媒としては、2-メトキシ-N,N-ジメチルアセトアミド、3-メトキシ-N,N-ジメチルプロピルアミド、3-エトキシ-N,N-ジメチルプロピルアミド、3-プロポキシ-N,N-ジメチルプロピルアミド、3-イソプロポキシ-N,N-ジメチルプロピルアミド、3-ブトキシ-N,N-ジメチルプロピルアミド、3-sec-ブトキシ-N,N-ジメチルプロピルアミド、3-tert-ブトキシ-N,N-ジメチルプロピルアミド等が挙げられる。 Examples of the organic solvent represented by the formula (S1) include 2-methoxy-N, N-dimethylacetamide, 3-methoxy-N, N-dimethylpropylamide, 3-ethoxy-N, N-dimethylpropylamide, 3- Propoxy-N, N-dimethylpropylamide, 3-isopropoxy-N, N-dimethylpropylamide, 3-butoxy-N, N-dimethylpropylamide, 3-sec-butoxy-N, N-dimethylpropylamide, 3 -Tert-butoxy-N, N-dimethylpropylamide and the like.
 式(S2)で表される有機溶媒としては、N-メチル-2-ピロリドン(NMP)、N-エチル-2-ピロリドン、N-プロピル-2-ピロリドン、N-ブチル-2-ピロリドン等が挙げられる。 Examples of the organic solvent represented by the formula (S2) include N-methyl-2-pyrrolidone (NMP), N-ethyl-2-pyrrolidone, N-propyl-2-pyrrolidone, N-butyl-2-pyrrolidone and the like. It is done.
 式(S3)で表される有機溶媒としては、N,N-ジメチルホルムアミド、N,N-ジメチルアセトアミド、N,N-ジメチルプロピオンアミド、N,N-ジメチルイソブチルアミド等が挙げられる。 Examples of the organic solvent represented by the formula (S3) include N, N-dimethylformamide, N, N-dimethylacetamide, N, N-dimethylpropionamide, N, N-dimethylisobutyramide and the like.
 また、単独では前記ポリヒドロキシアミドを溶解しない溶媒であっても、溶解性を損なわない範囲であれば前記溶媒に加えて使用することができる。その具体例としては、エチルセロソルブ、ブチルセロソルブ、エチルカルビトール、ブチルカルビトール、エチルカルビトールアセテート、エチレングリコール、1-メトキシ-2-プロパノール、1-エトキシ-2-プロパノール、1-ブトキシ-2-プロパノール、1-フェノキシ-2-プロパノール、プロピレングリコールモノアセテート、プロピレングリコールジアセテート、プロピレングリコール-1-モノメチルエーテル-2-アセテート、プロピレングリコール-1-モノエチルエーテル-2-アセテート、ジプロピレングリコール、2-(2-エトキシプロポキシ)プロパノール、乳酸メチル、乳酸エチル、乳酸n-プロピル、乳酸n-ブチル、乳酸イソアミル等が挙げられる。 Further, even if the solvent alone does not dissolve the polyhydroxyamide, it can be used in addition to the solvent as long as the solubility is not impaired. Specific examples thereof include ethyl cellosolve, butyl cellosolve, ethyl carbitol, butyl carbitol, ethyl carbitol acetate, ethylene glycol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, and 1-butoxy-2-propanol. 1-phenoxy-2-propanol, propylene glycol monoacetate, propylene glycol diacetate, propylene glycol-1-monomethyl ether-2-acetate, propylene glycol-1-monoethyl ether-2-acetate, dipropylene glycol, 2- (2-Ethoxypropoxy) propanol, methyl lactate, ethyl lactate, n-propyl lactate, n-butyl lactate, isoamyl lactate and the like.
 前記ポリヒドロキシアミド組成物中、ポリヒドロキシアミドの濃度は、作製する樹脂フィルムの厚み、組成物の粘度等を勘案して適宜設定するものではあるが、通常1~30質量%程度、好ましくは1~20質量%程度である。 In the polyhydroxyamide composition, the concentration of polyhydroxyamide is appropriately set in consideration of the thickness of the resin film to be produced, the viscosity of the composition, etc., but is usually about 1 to 30% by mass, preferably 1 About 20% by mass.
[ポリベンゾオキサゾール樹脂フィルム]
 本発明のポリベンゾオキサゾール樹脂フィルムは、前記ポリヒドロキシアミド組成物から得られるものである。前記ポリベンゾオキサゾール樹脂フィルムの製造方法は、前記ポリヒドロキシアミド組成物を基材上に塗布する工程、及び加熱して溶媒を蒸発させ、ポリヒドロキシアミドを閉環させる工程を含むものである。
[Polybenzoxazole resin film]
The polybenzoxazole resin film of the present invention is obtained from the polyhydroxyamide composition. The method for producing the polybenzoxazole resin film includes a step of applying the polyhydroxyamide composition onto a substrate, and a step of heating to evaporate the solvent and ring-closing the polyhydroxyamide.
 前記基材としては、ガラス、プラスチック(ポリカーボネート、ポリメタクリレート、ポリスチレン、ポリエステル、ポリオレフィン、エポキシ樹脂、メラミン樹脂、トリアセチルセルロース、ABS、AS、ノルボルネン系樹脂等)、金属(シリコンウエハ等)、SiNやSiO膜等の蒸着膜付ガラス基板、木材、紙、スレート等が挙げられるが、特に、生産性の観点から、ガラス、金属(シリコンウエハ等)等が好ましい。なお、基材表面は、単一の材料で構成されていてもよく、2以上の材料で構成されていてもよい。 Examples of the substrate include glass, plastic (polycarbonate, polymethacrylate, polystyrene, polyester, polyolefin, epoxy resin, melamine resin, triacetyl cellulose, ABS, AS, norbornene resin, etc.), metal (silicon wafer, etc.), SiN, Examples thereof include glass substrates with vapor deposition films such as SiO films, wood, paper, slate, etc. From the viewpoint of productivity, glass, metal (silicon wafer, etc.) are particularly preferable. In addition, the base material surface may be comprised with the single material and may be comprised with two or more materials.
 前記ポリヒドロキシアミド組成物を塗布する方法としては、特に限定されないが、例えば、キャストコート法、スピンコート法、ブレードコート法、ディップコート法、ロールコート法、バーコート法、ダイコート法、インクジェット法、印刷法(凸版、凹版、平版、スクリーン印刷等)等が挙げられる。 The method for applying the polyhydroxyamide composition is not particularly limited, for example, cast coating method, spin coating method, blade coating method, dip coating method, roll coating method, bar coating method, die coating method, inkjet method, Examples of the printing method include relief printing, intaglio printing, planographic printing, and screen printing.
 前記有機溶媒を蒸発させるときの加熱温度は、50~200℃が好ましく、50~150℃がより好ましい。また、そのときの加熱時間は、5分間~5時間が好ましく、5分間~3時間がより好ましい。 The heating temperature for evaporating the organic solvent is preferably 50 to 200 ° C, more preferably 50 to 150 ° C. The heating time at that time is preferably 5 minutes to 5 hours, and more preferably 5 minutes to 3 hours.
 このとき、閉環するための加熱温度は、通常50~550℃の範囲内で適宜決定されるが、好ましくは200℃以上、また、好ましくは500℃以下である。加熱温度をこのようにすることで、得られる膜の脆弱化を防ぎつつ、オキサゾール化反応を十分に進行させることが可能となる。加熱時間は、加熱温度によって異なるため一概に規定できないが、通常5分~5時間である。また、閉環率は、50~100%の範囲であればよい。 At this time, the heating temperature for ring closure is usually appropriately determined within the range of 50 to 550 ° C., but is preferably 200 ° C. or more, and preferably 500 ° C. or less. By setting the heating temperature in this way, it is possible to sufficiently advance the oxazolation reaction while preventing the obtained film from being weakened. The heating time varies depending on the heating temperature, and cannot be generally defined, but is usually 5 minutes to 5 hours. The ring closure rate may be in the range of 50 to 100%.
 加熱態様の好ましい一例としては、50~100℃で5分間~2時間加熱した後に、そのまま段階的に加熱温度を上昇させて最終的に375℃超~450℃で30分~4時間加熱する手法が挙げられる。特に、50~100℃で5分間~2時間加熱した後に、100℃超~375℃で5分間~2時間、最後に375℃超~450℃で30分~4時間加熱することが好ましい。 As a preferred example of the heating mode, after heating at 50 to 100 ° C. for 5 minutes to 2 hours, the heating temperature is gradually raised as it is, and finally heating is performed at a temperature exceeding 375 ° C. to 450 ° C. for 30 minutes to 4 hours. Is mentioned. In particular, after heating at 50 to 100 ° C. for 5 minutes to 2 hours, it is preferable to heat at over 100 ° C. to 375 ° C. for 5 minutes to 2 hours, and finally at over 375 ° C. to 450 ° C. for 30 minutes to 4 hours.
 前記樹脂フィルムの厚さは、特に限定されないが、後述する電子デバイスの基板として使用する場合、通常1~100μm程度、十分な自己支持性と柔軟性の観点から、好ましくは5~75μm程度、より好ましくは5~50μm程度である。 The thickness of the resin film is not particularly limited, but when used as a substrate of an electronic device to be described later, it is usually about 1 to 100 μm, preferably about 5 to 75 μm from the viewpoint of sufficient self-supporting property and flexibility. The thickness is preferably about 5 to 50 μm.
 前記樹脂フィルム形成後、該樹脂フィルムを基材から剥離して回収することができる。フィルムの剥離は、水への浸漬、波長308nmの紫外光を用いたレーザーリフトオフ法等によって行うことができる。 After the resin film is formed, the resin film can be peeled off from the substrate and recovered. The film can be peeled by immersion in water, a laser lift-off method using ultraviolet light having a wavelength of 308 nm, or the like.
 このようにして得られた本発明のポリベンゾオキサゾール樹脂フィルムは、耐熱性が高く、線膨張係数が小さいものである。具体的には、本発明のポリベンゾオキサゾール樹脂フィルムは、5%重量減少温度が600℃以上であり、50~400℃の線膨張係数が8ppm/℃以下であることが好ましい。 The polybenzoxazole resin film of the present invention thus obtained has high heat resistance and a small linear expansion coefficient. Specifically, the polybenzoxazole resin film of the present invention preferably has a 5% weight loss temperature of 600 ° C. or higher and a linear expansion coefficient of 50 to 400 ° C. of 8 ppm / ° C. or lower.
[電子デバイス]
 本発明の電子デバイスは、前述したポリベンゾオキサゾール樹脂フィルムを基板として備えるものである。前記電子デバイスとしては、有機EL素子、液晶ディスプレイ、有機ELディスプレイ、光半導体(LED)素子、電子ペーパー、固体撮像素子、有機薄膜太陽電池、色素増感太陽電池、有機薄膜トランジスタ(TFT)、3Dディスプレイ、タッチパネル等が挙げられる。
[Electronic device]
The electronic device of the present invention comprises the above-described polybenzoxazole resin film as a substrate. Examples of the electronic device include an organic EL element, a liquid crystal display, an organic EL display, an optical semiconductor (LED) element, electronic paper, a solid-state imaging element, an organic thin film solar cell, a dye-sensitized solar cell, an organic thin film transistor (TFT), and a 3D display. And a touch panel.
 本発明の電子デバイスの製造方法の一例について説明する。前述の方法によって、基材上に前記ポリヒドロキシアミド組成物を塗布し、加熱して、基材に固定されたポリベンゾオキサゾール樹脂フィルムを形成する。次に、前記樹脂フィルムの上に、所望の回路を形成し、その後、前記樹脂フィルムをカットし、この回路が形成された樹脂フィルムを前記基材から剥離して、回路が形成された樹脂フィルムと基材とを分離することで、電子デバイスを製造することができる。 An example of a method for manufacturing an electronic device according to the present invention will be described. By the above-mentioned method, the polyhydroxyamide composition is applied on a substrate and heated to form a polybenzoxazole resin film fixed to the substrate. Next, a desired circuit is formed on the resin film, and then the resin film is cut, and the resin film on which the circuit is formed is peeled off from the substrate to form a circuit. By separating the substrate and the substrate, an electronic device can be manufactured.
 以下、実施例及び比較例を示して本発明を具体的に説明するが、本発明は下記実施例に限定されない。なお、下記例において使用した化合物、並びに重量平均分子量及び分子量分布の測定方法は、以下のとおりである。 Hereinafter, the present invention will be specifically described with reference to examples and comparative examples, but the present invention is not limited to the following examples. In addition, the compound used in the following example and the measuring method of a weight average molecular weight and molecular weight distribution are as follows.
NMP:N-メチルピロリドン
HAB:4,4'-ジアミノ-3,3'-ジヒドロキシビフェニル
4BP:3,3'-ジアミノ-4,4'-ジヒドロキシビフェニル
TPC:テレフタル酸クロリド
IPC:イソフタル酸クロリド
DEDC:4,4'-ジフェニルエーテルジカルボン酸クロリド
NMP: N-methylpyrrolidone HAB: 4,4′-diamino-3,3′-dihydroxybiphenyl 4BP: 3,3′-diamino-4,4′-dihydroxybiphenyl TPC: terephthalic acid chloride IPC: isophthalic acid chloride DEDC: 4,4'-diphenyl ether dicarboxylic acid chloride
[重量平均分子量(Mw)及び分子量分布(Mw/Mn)の測定]
 ポリマーのMwとMw/Mnは、日本分光(株)製GPC装置(カラム:昭和電工(株)製Shodex(登録商標)カラムKF803L及びKF805L、溶出溶媒:ジメチルホルムアミド、流量:1.0mL/分、カラム温度:50℃、Mw:標準ポリスチレン換算値)を用いて測定した。
[Measurement of weight average molecular weight (Mw) and molecular weight distribution (Mw / Mn)]
Mw and Mw / Mn of the polymer are GPC apparatus manufactured by JASCO Corporation (column: Shodex (registered trademark) columns KF803L and KF805L manufactured by Showa Denko KK, elution solvent: dimethylformamide, flow rate: 1.0 mL / min, Column temperature: 50 ° C., Mw: standard polystyrene conversion value).
[1]ポリマーの合成
[実施例1]ポリヒドロキシアミドP1の合成
 HAB1.052g(4.87mmol)をNMP27.6gに溶かし、ピリジン0.963g(12.18mmol)を添加した後、DEDC1.149g(3.90mmol)とTPC0.198g(0.97mmol)とを添加し、室温にて24時間攪拌した。その後、得られた溶液を純水500mLへ投入した。得られた沈殿物を濾別後、70℃で24時間減圧乾燥し、目的のポリヒドロキシアミドP1を得た。GPC測定によるポリヒドロキシアミドP1のMwは60,300、Mw/Mnは2.8であった。
[1] Synthesis of Polymer [Example 1] Synthesis of polyhydroxyamide P1 1.052 g (12.18 mmol) of pyridine was added to 0.963 g (12.18 mmol) of pyridine after dissolving 1.052 g (4.87 mmol) of HAB in 27.6 g of NMP. 3.90 mmol) and 1.198 g (0.97 mmol) of TPC were added and stirred at room temperature for 24 hours. Thereafter, the obtained solution was poured into 500 mL of pure water. The resulting precipitate was filtered off and dried under reduced pressure at 70 ° C. for 24 hours to obtain the desired polyhydroxyamide P1. According to GPC measurement, Mw of polyhydroxyamide P1 was 60,300, and Mw / Mn was 2.8.
[実施例2、比較例1~5]ポリヒドロキシアミドP2、ポリヒドロキシアミドCP1~CP5の合成
 実施例1と同様の方法で、ポリヒドロキシアミドP2、ポリヒドロキシアミドCP1~CP5を合成した。使用したジカルボン酸塩化物の種類と使用量、ジアミンの種類と使用量、NMPの使用量、Mw、及びMw/Mnを表1に示す。
[Example 2, Comparative Examples 1 to 5] Synthesis of polyhydroxyamide P2 and polyhydroxyamides CP1 to CP5 Polyhydroxyamide P2 and polyhydroxyamides CP1 to CP5 were synthesized in the same manner as in Example 1. Table 1 shows the type and amount of dicarboxylic acid chloride used, the type and amount of diamine, the amount of NMP used, Mw, and Mw / Mn.
[2]ポリヒドロキシアミドの溶解性の評価
 作製したポリヒドロキシアミド1gをNMP20gに入れ、室温で48時間攪拌し、再溶解させた。
 結果を表1に併記する。なお、溶解性の評価基準は、以下のとおりである。
  ○:重合中溶解し、精製後も再溶解する。
  △:重合中溶解するが、精製後は再溶解しない。
  ×:重合中析出する。
[2] Evaluation of solubility of polyhydroxyamide 1 g of the produced polyhydroxyamide was placed in 20 g of NMP and stirred at room temperature for 48 hours to be redissolved.
The results are also shown in Table 1. In addition, the evaluation criteria of solubility are as follows.
○: Dissolved during polymerization and re-dissolved after purification.
Δ: Dissolved during polymerization, but not re-dissolved after purification.
X: Precipitates during polymerization.
Figure JPOXMLDOC01-appb-T000047
Figure JPOXMLDOC01-appb-T000047
[2]ポリベンゾオキサゾール樹脂フィルムの作製、及びその評価
[キュア前膜厚・剥離方法]
 実施例1~2及び比較例5で作製したポリヒドロキシアミド1gを、NMP20mLに溶解させ、ポリヒドロキシアミド組成物を調製した。
 得られた各組成物を、100mm×100mmガラス基板上にバーコーターを用いて塗布し、ホットプレート上で80℃30分ベークした。その後、140℃で30分間加熱し、加熱温度を210℃まで昇温(10℃/分、以下同様)し、210℃で30分間、加熱温度を300℃まで昇温し、300℃で30分間、加熱温度を400℃まで昇温し、400℃で60分間加熱した。昇温の間、膜付き基板をオーブンから取り出すことはせず、オーブン内で加熱した。得られた塗布膜の膜厚は、接触式膜厚測定器((株)ULVAC製Dektak 3ST)で測定した。膜厚の測定結果を表2に示す。その後、ガラス基板ごと、1Lビーカー内の70℃の純水中に静置し、フィルムの剥離を行った。
[2] Preparation and evaluation of polybenzoxazole resin film [pre-cure film thickness / peeling method]
1 g of polyhydroxyamide prepared in Examples 1-2 and Comparative Example 5 was dissolved in 20 mL of NMP to prepare a polyhydroxyamide composition.
Each composition obtained was applied onto a 100 mm × 100 mm glass substrate using a bar coater and baked on a hot plate at 80 ° C. for 30 minutes. Thereafter, heating is performed at 140 ° C. for 30 minutes, the heating temperature is raised to 210 ° C. (10 ° C./minute, the same applies hereinafter), the heating temperature is raised to 210 ° C. for 30 minutes, the heating temperature is raised to 300 ° C., and 300 ° C. for 30 minutes. The heating temperature was raised to 400 ° C. and heated at 400 ° C. for 60 minutes. During the temperature increase, the film-coated substrate was not removed from the oven but heated in the oven. The film thickness of the obtained coating film was measured with a contact-type film thickness measuring device (Dektak 3ST manufactured by ULVAC). Table 2 shows the measurement results of the film thickness. Thereafter, the glass substrate was allowed to stand in 70 ° C. pure water in a 1 L beaker, and the film was peeled off.
[線膨張係数]
 得られたフィルムから20mm×5mmの短冊を作製し、TMA-4000SA(ブルカー・エイエックスエス(株)製)を用いて、50℃から400℃まで、10℃/分の条件で昇温し、線膨張係数を測定した。結果を表2に示す。
[Linear expansion coefficient]
A strip of 20 mm × 5 mm was prepared from the obtained film, and the temperature was raised from 50 ° C. to 400 ° C. under the condition of 10 ° C./min using TMA-4000SA (manufactured by Bruker AXS Co., Ltd.) The linear expansion coefficient was measured. The results are shown in Table 2.
[5%重量減少温度]
 得られたフィルムから20mm×3mmの短冊を作製し、TGA-DTA-2000SR(ブルカー・エイエックスエス(株)製)を用いて、50℃から600℃まで重量減少を測定し、5%重量減少温度を確認した。結果を表2に示す。なお、600℃で5%重量減少しない場合は、600℃<と記載した。
[5% weight loss temperature]
A 20 mm x 3 mm strip was prepared from the obtained film, and the weight loss was measured from 50 ° C to 600 ° C using TGA-DTA-2000SR (Bruker AXS Co., Ltd.). The temperature was confirmed. The results are shown in Table 2. In addition, when not reducing the weight by 5% at 600 ° C., it was described as 600 ° C. <.
[自己支持性]
 作製したフィルムを剥離し、その後、全方向に90°曲げた後、特に変化が無いものを自己支持性があるものとした。
 結果を表2に示す。なお、自己支持性の評価基準は、以下のとおりである。
  ○:自己支持性あり。90度にまげても割れない
  △:自己支持性はあるが、曲げて割れる
  ×:自己支持性なし
  ××:基板上で分解
[Self-supporting]
After the produced film was peeled and then bent 90 ° in all directions, a film having no particular change was regarded as having self-supporting properties.
The results are shown in Table 2. The evaluation criteria for self-supporting properties are as follows.
○: Self-supporting. Even if it bends to 90 degrees, it does not crack. △: Self-supporting, but breaks when bent. ×: No self-supporting. XX: Decomposes on substrate
Figure JPOXMLDOC01-appb-T000048
Figure JPOXMLDOC01-appb-T000048

Claims (25)

  1.  (A)下記式(1)で表される単位及び下記式(2)で表される単位を含むポリヒドロキシアミド、及び(B)有機溶媒を含む電子デバイス用基板製造用ポリヒドロキシアミド組成物。
    Figure JPOXMLDOC01-appb-C000001
    [式中、X1は、窒素原子と結合する炭素原子に隣接する炭素原子上にヒドロキシ基を有するビフェニルジイル基を表し;Y1は、炭素数6~14の2価の芳香族基を表し;Y2は、下記式(3)で表される基を表し;n及びmは、0<n<100、0<m<100、及び0<n+m≦100を満たす正数を表す。
    Figure JPOXMLDOC01-appb-C000002
    (式中、Z1は、-O-、-NH-又は-N(R)-を表し、Rは、炭素数1~10のアルキル基を表し;Ar1及びAr2は、互いに独立して、炭素数6~14の2価の芳香族基を表し;破線は、結合手を表す。)]
    (A) A polyhydroxyamide composition for producing a substrate for electronic devices, comprising a unit represented by the following formula (1) and a polyhydroxyamide containing a unit represented by the following formula (2), and (B) an organic solvent.
    Figure JPOXMLDOC01-appb-C000001
    [Wherein, X 1 represents a biphenyldiyl group having a hydroxy group on the carbon atom adjacent to the carbon atom bonded to the nitrogen atom; Y 1 represents a divalent aromatic group having 6 to 14 carbon atoms] Y 2 represents a group represented by the following formula (3); n and m represent positive numbers satisfying 0 <n <100, 0 <m <100, and 0 <n + m ≦ 100.
    Figure JPOXMLDOC01-appb-C000002
    (Wherein Z 1 represents —O—, —NH— or —N (R) —, R represents an alkyl group having 1 to 10 carbon atoms; Ar 1 and Ar 2 are independently of each other; Represents a divalent aromatic group having 6 to 14 carbon atoms; a broken line represents a bond.)]
  2.  X1が、下記式(4)で表される基である請求項1記載の電子デバイス用基板製造用ポリヒドロキシアミド組成物。
    Figure JPOXMLDOC01-appb-C000003
    (式中、R1~R6は、互いに独立して、水素原子、ハロゲン原子、ニトロ基、シアノ基、又はハロゲン原子で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;破線は、結合手を表す。)
    The polyhydroxyamide composition for producing a substrate for an electronic device according to claim 1, wherein X 1 is a group represented by the following formula (4).
    Figure JPOXMLDOC01-appb-C000003
    (Wherein R 1 to R 6 are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, or an alkyl group having 1 to 20 carbon atoms which may be substituted with a halogen atom, Represents an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms; a broken line represents a bond.)
  3.  X1が、下記式(4')で表される基である請求項2記載の電子デバイス用基板製造用ポリヒドロキシアミド組成物。
    Figure JPOXMLDOC01-appb-C000004
    (式中、破線は、結合手を表す。)
    The polyhydroxyamide composition for producing a substrate for an electronic device according to claim 2, wherein X 1 is a group represented by the following formula (4 ′).
    Figure JPOXMLDOC01-appb-C000004
    (In the formula, a broken line represents a bond.)
  4.  Y1が下記式(5)で表される基であり、Y2が下記式(6)で表される基である請求項1~3のいずれか1項記載の電子デバイス用基板製造用ポリヒドロキシアミド組成物。
    Figure JPOXMLDOC01-appb-C000005
    (式中、Z1は、前記と同じであり;R7~R18は、互いに独立して、水素原子、ヒドロキシ基、ハロゲン原子、ニトロ基、シアノ基、又はハロゲン原子で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;破線は、結合手を表す。)
    The poly for manufacturing a substrate for an electronic device according to any one of claims 1 to 3, wherein Y 1 is a group represented by the following formula (5), and Y 2 is a group represented by the following formula (6): Hydroxyamide composition.
    Figure JPOXMLDOC01-appb-C000005
    Wherein Z 1 is as defined above; R 7 to R 18 may be independently of each other substituted with a hydrogen atom, a hydroxy group, a halogen atom, a nitro group, a cyano group, or a halogen atom. Preferably represents an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms; A broken line represents a bond.)
  5.  R7~R18が、水素原子である請求項4記載の電子デバイス用基板製造用ポリヒドロキシアミド組成物。 The polyhydroxyamide composition for producing a substrate for an electronic device according to claim 4, wherein R 7 to R 18 are hydrogen atoms.
  6.  Y2が、下記式(7)、(8)又は(9)で表される基である請求項1~5のいずれか1項記載の電子デバイス用基板製造用ポリヒドロキシアミド組成物。
    Figure JPOXMLDOC01-appb-C000006
    (式中、破線は、結合手を表す。)
    6. The polyhydroxyamide composition for producing a substrate for an electronic device according to claim 1, wherein Y 2 is a group represented by the following formula (7), (8) or (9).
    Figure JPOXMLDOC01-appb-C000006
    (In the formula, a broken line represents a bond.)
  7.  n及びmが、5≦n≦25、75≦m≦95、及び80≦n+m≦100を満たす正数である請求項1~6のいずれか1項記載の電子デバイス用基板製造用ポリヒドロキシアミド組成物。 The polyhydroxyamide for producing a substrate for an electronic device according to any one of claims 1 to 6, wherein n and m are positive numbers satisfying 5≤n≤25, 75≤m≤95, and 80≤n + m≤100. Composition.
  8.  (B)有機溶媒が、下記式(S1)で表されるアミド類、下記式(S2)で表されるアミド類及び下記式(S3)で表されるアミド類から選ばれる少なくとも1つを含む請求項1~7のいずれか1項記載の電子デバイス用基板用ポリヒドロキシアミド組成物。
    Figure JPOXMLDOC01-appb-C000007
    (式中、R21及びR22は、互いに独立して、炭素数1~10のアルキル基を表す。R23は、水素原子、又は炭素数1~10のアルキル基を表す。aは、自然数を表す。)
    (B) The organic solvent contains at least one selected from amides represented by the following formula (S1), amides represented by the following formula (S2), and amides represented by the following formula (S3). The polyhydroxyamide composition for a substrate for an electronic device according to any one of claims 1 to 7.
    Figure JPOXMLDOC01-appb-C000007
    (In the formula, R 21 and R 22 each independently represent an alkyl group having 1 to 10 carbon atoms. R 23 represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms. A is a natural number. Represents.)
  9.  請求項1~8のいずれか1項記載の電子デバイス用基板製造用ポリヒドロキシアミド組成物を基材上に塗布する工程、及び加熱して溶媒を蒸発させ、ポリヒドロキシアミドを閉環させる工程を含む電子デバイス用基板用ポリベンゾオキサゾール樹脂フィルムの製造方法。 A step of applying the polyhydroxyamide composition for producing a substrate for an electronic device according to any one of claims 1 to 8 on a substrate, and a step of heating to evaporate the solvent and ring-closing the polyhydroxyamide. A method for producing a polybenzoxazole resin film for a substrate for electronic devices.
  10.  請求項1~8のいずれか1項記載のポリヒドロキシアミド組成物から得られる電子デバイス用基板用ポリベンゾオキサゾール樹脂フィルム。 A polybenzoxazole resin film for an electronic device substrate obtained from the polyhydroxyamide composition according to any one of claims 1 to 8.
  11.  5%重量減少温度が600℃以上であり、50~400℃の線膨張係数が8ppm/℃以下である請求項10記載の電子デバイス用基板用ポリベンゾオキサゾール樹脂フィルム。 11. The polybenzoxazole resin film for an electronic device substrate according to claim 10, wherein the 5% weight loss temperature is 600 ° C. or more, and the linear expansion coefficient at 50 to 400 ° C. is 8 ppm / ° C. or less.
  12.  請求項10又は11記載の電子デバイス用基板用ポリベンゾオキサゾール樹脂フィルムを基板として備える電子デバイス。 An electronic device provided with the polybenzoxazole resin film for a substrate for electronic devices according to claim 10 or 11 as a substrate.
  13.  有機エレクトロルミネッセンス素子である請求項12記載の電子デバイス。 The electronic device according to claim 12, which is an organic electroluminescence element.
  14.  下記式(10)で表される単位及び下記式(11)で表される単位を含むポリヒドロキシアミド。
    Figure JPOXMLDOC01-appb-C000008
    [式中、X1は、窒素原子と結合する炭素原子に隣接する炭素原子上にヒドロキシ基を有するビフェニルジイル基を表し;Y1は、炭素数6~14の2価の芳香族基を表し;Y2は、下記式(3)で表される基を表し;n及びmは、5≦n≦25、75≦m≦95、及び80≦n+m≦100を満たす正数を表す。
    Figure JPOXMLDOC01-appb-C000009
    (式中、Z1は、-O-、-NH-又は-N(R)-を表し、Rは、炭素数1~10のアルキル基を表し;Ar1及びAr2は、互いに独立して、炭素数6~14の2価の芳香族基を表し;破線は、結合手を表す。)]
    A polyhydroxyamide containing a unit represented by the following formula (10) and a unit represented by the following formula (11).
    Figure JPOXMLDOC01-appb-C000008
    [Wherein, X 1 represents a biphenyldiyl group having a hydroxy group on the carbon atom adjacent to the carbon atom bonded to the nitrogen atom; Y 1 represents a divalent aromatic group having 6 to 14 carbon atoms] Y 2 represents a group represented by the following formula (3); n and m represent positive numbers satisfying 5 ≦ n ≦ 25, 75 ≦ m ≦ 95, and 80 ≦ n + m ≦ 100.
    Figure JPOXMLDOC01-appb-C000009
    (Wherein Z 1 represents —O—, —NH— or —N (R) —, R represents an alkyl group having 1 to 10 carbon atoms; Ar 1 and Ar 2 are independently of each other; Represents a divalent aromatic group having 6 to 14 carbon atoms; a broken line represents a bond.)]
  15.  X1が、下記式(4)で表される基である請求項14記載のポリヒドロキシアミド。
    Figure JPOXMLDOC01-appb-C000010
    (式中、R1~R6は、互いに独立して、水素原子、ハロゲン原子、ニトロ基、シアノ基、又はハロゲン原子で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;破線は、結合手を表す。)
    The polyhydroxyamide according to claim 14, wherein X 1 is a group represented by the following formula (4).
    Figure JPOXMLDOC01-appb-C000010
    (Wherein R 1 to R 6 are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, or an alkyl group having 1 to 20 carbon atoms which may be substituted with a halogen atom, Represents an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms; a broken line represents a bond.)
  16.  X1が、下記式(4')で表される基である請求項15記載のポリヒドロキシアミド。
    Figure JPOXMLDOC01-appb-C000011
    (式中、破線は、結合手を表す。)
    16. The polyhydroxyamide according to claim 15, wherein X 1 is a group represented by the following formula (4 ′).
    Figure JPOXMLDOC01-appb-C000011
    (In the formula, a broken line represents a bond.)
  17.  Y1が下記式(5)で表される基であり、Y2が下記式(6)で表される基である請求項14~16のいずれか1項記載のポリヒドロキシアミド。
    Figure JPOXMLDOC01-appb-C000012
    (式中、Z1は、前記と同じであり;R7~R18は、互いに独立して、水素原子、ヒドロキシ基、ハロゲン原子、ニトロ基、シアノ基、又はハロゲン原子で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;破線は、結合手を表す。)
    The polyhydroxyamide according to any one of claims 14 to 16, wherein Y 1 is a group represented by the following formula (5), and Y 2 is a group represented by the following formula (6).
    Figure JPOXMLDOC01-appb-C000012
    Wherein Z 1 is as defined above; R 7 to R 18 may be independently of each other substituted with a hydrogen atom, a hydroxy group, a halogen atom, a nitro group, a cyano group, or a halogen atom. Preferably represents an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms; A broken line represents a bond.)
  18.  R7~R18が、水素原子である請求項17記載のポリヒドロキシアミド。 The polyhydroxyamide according to claim 17, wherein R 7 to R 18 are hydrogen atoms.
  19.  Y2が、下記式(7)、(8)又は(9)で表される基である請求項14~18のいずれか1項記載のポリヒドロキシアミド。
    Figure JPOXMLDOC01-appb-C000013
    (式中、破線は、結合手を表す。)
    The polyhydroxyamide according to any one of claims 14 to 18, wherein Y 2 is a group represented by the following formula (7), (8) or (9).
    Figure JPOXMLDOC01-appb-C000013
    (In the formula, a broken line represents a bond.)
  20.  下記式(12)で表されるジアミン化合物、前記ジアミン化合物1モルに対して0.05~0.25モルとなる量の下記式(13)で表されるジカルボン酸誘導体、及び前記ジアミン化合物1モルに対して0.75~0.95モルとなる量の下記式(14)で表されるジカルボン酸誘導体を、溶媒中、触媒の存在下で縮合重合させる、ポリヒドロキシアミドの製造方法。
    Figure JPOXMLDOC01-appb-C000014
    [式中、X1は、窒素原子と結合する炭素原子に隣接する炭素原子上にヒドロキシ基を有するビフェニルジイル基を表し;Y1は、炭素数6~14の2価の芳香族基を表し;Y2は、下記式(3)で表される基を表す。
    Figure JPOXMLDOC01-appb-C000015
    (式中、Z1は、-O-、-NH-又は-N(R)-を表し、Rは、炭素数1~10のアルキル基を表し;Ar1及びAr2は、互いに独立して、炭素数6~14の2価の芳香族基を表し;破線は、結合手を表す。)]
    A diamine compound represented by the following formula (12), a dicarboxylic acid derivative represented by the following formula (13) in an amount of 0.05 to 0.25 mol relative to 1 mol of the diamine compound, and the diamine compound 1 A method for producing a polyhydroxyamide, comprising subjecting a dicarboxylic acid derivative represented by the following formula (14) in an amount of 0.75 to 0.95 mole to the mole to condensation polymerization in a solvent in the presence of a catalyst.
    Figure JPOXMLDOC01-appb-C000014
    [Wherein, X 1 represents a biphenyldiyl group having a hydroxy group on the carbon atom adjacent to the carbon atom bonded to the nitrogen atom; Y 1 represents a divalent aromatic group having 6 to 14 carbon atoms] ; Y 2 represents a group represented by the following formula (3).
    Figure JPOXMLDOC01-appb-C000015
    (Wherein Z 1 represents —O—, —NH— or —N (R) —, R represents an alkyl group having 1 to 10 carbon atoms; Ar 1 and Ar 2 are independently of each other; Represents a divalent aromatic group having 6 to 14 carbon atoms; a broken line represents a bond.)]
  21.  X1が、下記式(4)で表される基である請求項20記載のポリヒドロキシアミドの製造方法。
    Figure JPOXMLDOC01-appb-C000016
    (式中、R1~R6は、互いに独立して、水素原子、ハロゲン原子、ニトロ基、シアノ基、又はハロゲン原子で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;破線は、結合手を表す。)
    X 1 The method for producing a polyhydroxy amide according to claim 20, wherein a group represented by the following formula (4).
    Figure JPOXMLDOC01-appb-C000016
    (Wherein R 1 to R 6 are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, or an alkyl group having 1 to 20 carbon atoms which may be substituted with a halogen atom, Represents an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms; a broken line represents a bond.)
  22.  X1が、下記式(4')で表される基である請求項21記載のポリヒドロキシアミドの製造方法。
    Figure JPOXMLDOC01-appb-C000017
    (式中、破線は、結合手を表す。)
    The method for producing a polyhydroxyamide according to claim 21, wherein X 1 is a group represented by the following formula (4 ').
    Figure JPOXMLDOC01-appb-C000017
    (In the formula, a broken line represents a bond.)
  23.  Y1が下記式(5)で表される基であり、Y2が下記式(6)で表される基である請求項20~22のいずれか1項記載のポリヒドロキシアミドの製造方法。
    Figure JPOXMLDOC01-appb-C000018
    (式中、Z1は、前記と同じであり;R7~R18は、互いに独立して、水素原子、ヒドロキシ基、ハロゲン原子、ニトロ基、シアノ基、又はハロゲン原子で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;破線は、結合手を表す。)
    The method for producing a polyhydroxyamide according to any one of claims 20 to 22, wherein Y 1 is a group represented by the following formula (5), and Y 2 is a group represented by the following formula (6).
    Figure JPOXMLDOC01-appb-C000018
    Wherein Z 1 is as defined above; R 7 to R 18 may be independently of each other substituted with a hydrogen atom, a hydroxy group, a halogen atom, a nitro group, a cyano group, or a halogen atom. Preferably represents an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms; A broken line represents a bond.)
  24.  R7~R18が、水素原子である請求項23記載のポリヒドロキシアミドの製造方法。 The method for producing a polyhydroxyamide according to claim 23, wherein R 7 to R 18 are hydrogen atoms.
  25.  Y2が、下記式(7)、(8)又は(9)で表される基である請求項20~24のいずれか1項記載のポリヒドロキシアミドの製造方法。
    Figure JPOXMLDOC01-appb-C000019
    (式中、破線は、結合手を表す。)
    The method for producing a polyhydroxyamide according to any one of claims 20 to 24, wherein Y 2 is a group represented by the following formula (7), (8) or (9).
    Figure JPOXMLDOC01-appb-C000019
    (In the formula, a broken line represents a bond.)
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