WO2017080795A1

WO2017080795A1 - Method for producing an optoelectronic component, and optoelectronic component

Info

Publication number: WO2017080795A1
Application number: PCT/EP2016/075411
Authority: WO
Inventors: Arne FLEISSNER; Nina Riegel; Christoph KEFES
Original assignee: Osram Oled Gmbh
Priority date: 2015-11-12
Filing date: 2016-10-21
Publication date: 2017-05-18
Also published as: DE102015119534A1

Abstract

The invention relates to a method for producing an optoelectronic component (200) in various embodiments. The method (300) comprises: forming (302) at least one conductor structure (108) on or over a surface (114) of a substrate (102), wherein at least one part (116) of the surface (114) of the substrate (102) is free of conductor structure (108) and the at least one conductor structure (108) has an exposed surface (112), wherein at least the exposed surface (112) of the at least one conductor structure (108) and the surface of the substrate (114) are designed in such a way that a Lewis adduct (110) can be formed on the exposed surface (112) of the at least one conductor structure (108) with respect to a specified material and the surface (114) of the substrate (102) remains substantially free of the Lewis adduct (110); applying (304) the specified material to or over the surface of the at least one conductor structure (108) and the surface (114) of the substrate (102); and heating (306) at least the at least one conductor structure (108) to or above a first threshold temperature, wherein the Lewis adduct (110) is formed at or above the first threshold temperature.

Description

description

Method for producing an optoelectronic component and optoelectronic component

In various embodiments, methods for producing an optoelectronic component and an optoelectronic component are provided. A conventional optoelectronic assembly has an optically active region with a first electrode, an organic functional layer structure and a second electrode. For various applications, one of the electrodes is made transparent. The transparent electrode is usually formed of a transparent conductive oxide (TCO) and has, however, a low surface conductivity or transverse conductivity.

To increase or homogenize the current distribution in the transparent electrode a plurality of electric Sarnmel rails (busbars) are formed on the transparent electrode and electrically coupled thereto. The electrical busbars are usually formed from a metal.

The electrical bus bars are usually formed between on the transparent electrode and between the first electrode and the second electrode. In order to prevent an immediate flow of the organically functional layer structure through the electrical Sarnmelschienen, the electric Sarnmel rail are electrically insulated by means of a dielectric layer with respect to the organically functional layer structure.

Usually the electric busbars are covered with a resin. Employ alternative ideas with the formation of a thin oxidation layer on the electrical busbars.

In the contact or connection region of the optoelectronic assembly, the first electrode and the second electrode are electrically connected by means of metallization layers, also referred to as metallization, externally. formed contactable. The electrodes are electrically isolated from each other by means of a resist and formed in contact with the metallization.

A problem with the resist is the fixed shrinkage. Pixel shrinkage or Pixelsch inkage the degradation of the luminous surface is understood starting from the resist material at the edges of the luminous surface. This phenomenon is not conclusively resolved mechanistically. Discussed as cause is, for example, outgassing of solvent constituents or the decomposition of the organic by residues from the manufacturing process of the resist. For example, the resist consists of derivatives of polyimide.

The metallization is usually produced by means of a cathode sputtering process (sputtering) in a vacuum. The resist consists of a negative photoresist. In this case, exposed areas become insoluble, unexposed areas are rinsed off. This process is complicated and expensive by the fo olithografιsehen crosslinking step.

For cost reasons, the metallization layers and also the busbars should be wet-chemically, i. be prepared from a solution and structured as lithography free as possible.

In various embodiments, methods for producing an optoelectronic component and an optoelectronic component are provided with which it it is possible to produce metallizations, busbars and resist lithography-free from a solution.

In various embodiments, a method of manufacturing an optoelectronic device is provided. The method includes forming at least one conductor pattern on or over a surface of a substrate. At least a portion of the surface of the substrate is free of the at least one conductor pattern and the at least one conductor pattern has an exposed surface. At least the exposed surface of the at least one conductive pattern and the surface of the substrate are formed such that a Lewis adduct can be formed on the exposed surface of the at least one conductive pattern with respect to a given material and the surface of the substrate remains substantially free of the Lewis adduct. The method further comprises applying the predetermined material to or over the exposed surface of the at least one conductor pattern and the surface of the substrate. Furthermore, the method comprises heating at least the at least one conductor structure on or over a first

Schwewenenwerper au au, with the Lewis adduct forms from the first threshold temperature.

An adduct is understood to mean a molecule which is formed in a reaction without by-products such as water or alcohol. A Lewis adduct is an adduct between a Lewis acid and a Lewis base, i. covalently bonded molecules consisting of an electron donor and an electron acceptor. The surface of the conductor structure may be, for example, Lewis acid functionalized and the given material may be a Lewis base.

The process is based, for example, on the so-called "surface-induced cross-linking" of oxetane-functionalized materials dex öxetan groups thermally started from a (Lewis) acidic surface. In this method, the layer thickness can be precisely controlled by the duration of the thermal activation. It can be formed so layers with very little layer thickness deviation, bumps are overshadowed. The method is particularly suitable for metallic layers, for example for metallizations or busbars, which were produced wet-chemically, ie from solution, eg silver or copper nanowires. The structuring of the metallization or the busbars, ie the formation of the at least one conductor structure, can be effected for example by means of a screen printing method, which is particularly preferred for forming busbars. Alternatively, the conductor structure, for example by means of a structured nozzle coating (slot the coating) take place, which is particularly preferred for forming the metallizations. A further advantage of the method is thus that the coating and structuring of the metallization, the busbars and the dielectric insulation can be carried out wet-chemically (from a solution) and without lithography.

The surface of the substrate, which remains essentially free of the Lewis adduct, is in the

Essentially the part of the upper surface of the substrate, which is free of conductor structure, ie on which the conductor structure is not formed. By means of the functionalization or the functionality of the at least one conductor structure, a contrast with respect to the chemical reactivity of the exposed surface of the at least one conductor structure to the chemical reactivity of the surface of the substrate is formed. This subsequently enables a selective formation of a layer of the Lewis adduct. on the exposed surface of the at least one conductor structure, ie in physical contact with the at least one conductor structure. The functionality of the given material can be adjusted for example by means of a functional group. By means of the method, a self-organized, electrical isolation of busbars and / or metallization is made possible, for example, if they were previously processed from a Lewis acidic solvent.

Furthermore, the layer formed by means of the Lewis adduct on the surface of the at least one conductor structure has a significantly higher glass transition temperature than the conventional parent layers used conventionally. This causes a high thermal stability of this layer.

In various embodiments, a method for producing an optoelectronic component is provided. The method includes forming at least one conductive pattern on or over a surface of a substrate, wherein at least a portion of the surface of the substrate is free of conductive pattern and the at least one conductive pattern has an exposed surface. At least the exposed surface of the at least one conductor structure is formed such that on the exposed surface of the at least one conductor structure with respect to a given material, a Le is -Addukt can be formed. The method further comprises applying the predetermined material to or over the surface of the at least one conductor pattern and the surface of the substrate. The method further comprises heating the at least one conductor pattern to or above a first threshold temperature such that the surface of the at least one conductor pattern has a temperature greater than or equal to the first threshold temperature and the surface of the substrate is at a temperature less than the first threshold temperature forms the Lewis adduct from the first threshold temperature. The surface of the substrate and the surface of the at least one conductor structure can thus have a substantially identical functionalization with respect to the given material. However, the conductor pattern is selectively heated so that the given material with the at least one conductor pattern forms the Lewis adduct. In this way, the surface of the substrate is essentially free of Lewis adduct. In various embodiments, the conductor pattern comprises or is formed from a plurality of nanowires. The conductor structure may comprise a Lewis acid. In various embodiments, the exposed surface of the at least one conductive pattern is functionalized such that the Lewis adduct is formed on the exposed surface of the at least one conductive pattern. Upon functionalization, a proton donor or an electron donor is exposed on the surface

Surface of at least one Leiterstruk ur formed.

In various embodiments, the exposed surface of the at least one ladder structure is functionalized by a self-assembling monolayer, wherein the self-organizing

Monolayer Lewis acid head groups or Lewis basic head groups. In various embodiments, the substrate has an electrically conductive layer on a carrier, and the at least one conductor structure is formed electrically conductively and electrically conductively connected to the electrically conductive layer. Furthermore, at least in one area on or above the substrate, the at least one

Ladder structure and the Lewis adduct an organically functional layer structure and on or above the organically functional layer structure another electrically conductive layer formed. For example, each in direct physical or physical contact. In various embodiments, the predetermined material is applied wet-chemically, for example dissolved in a solvent applied at least to the surfaces of the at least one conductor structure and the substrate.

In various embodiments, the given material has an oxet group, for example in the form of an oxeta-functionalized polymer. The oxetane group allows crosslinking of the given material, that is, the oxetane-functionalized material, essentially without volume shrinkage, for example, in contrast to about 10% volume shrinkage in epoxides. As a result, for example, a strain-tight layer is formed. This layer may be substantially free of microcracks. These microcracks could lead to short circuits and thus failure of the optoelectronic component. The resolution of the formed layer is very high, since the conductor structure, for example exactly, is over-molded by the amount of the layer thickness of the crosslinked layer formed by means of the Lewis adduct. In addition, the oxetane group is relatively easily accessible in the synthesis, which allows a variety of dielectric materials.

In various embodiments, forming the Lewis adduct is above the first

Threshold temperature, a crosslinking reaction, for example, a living polymerization. In various embodiments, the temperature is increased by means of an electrical current through the conductor structure to at least the first threshold temperature.

In various exemplary embodiments, at least one first conductor pattern and one second conductor pattern are formed on the substrate. The temperature of the first conductor pattern and the temperature of the second conductor pattern are increased substantially equally. For example, to an approximately equal value of at least the first threshold temperature.

In various exemplary embodiments, at least one first conductor structure and one second conductor structure are formed on the substrate. The temperature of the first conductor pattern is raised to a temperature greater than or equal to the first threshold temperature, and the temperature of the second conductor pattern remains substantially unchanged and / or below the first threshold temperature.

In various embodiments, the method further comprises removing the predetermined material after forming the Lewis adduct from the surface of the substrate and from the Lewis adduct on the exposed surface of the at least one conductor pattern. In other words; After forming the Lewis adduct on the surface of at least one conductor pattern, the unreacted or unreacted given material is removed from the surface of the substrate and the Lewis adduct forming a layer on the at least one conductor structure. For example, unreacted or no longer reactive, given material can not react because the temperature of the at least one conductor structure has been reduced to a value below the first threshold temperature, for example to a value below the second threshold temperature. This will be the 3

Chemical reaction of the given material with the chemically active exposed surface of the at least one conductor structure or. the chemically active surface of the chemically active Lewis adduct, which has already been formed on the exposed surface of the at least one conductor structure stopped.

In other words, the reactive group on the surface is connected to the already crosslinked layer via covalent bonds. The chemical reaction can be stopped by removing, for example rinsing, unreacted material that is still in solution. After this. Step, the reactive groups remain covalently bonded to the surface. The surface can then be treated with a base, so that the end groups react. Alternatively, another layer can be applied, which is also further crosslinked by means of living polymerization. This process can be repeated or stopped as described above.

By applying a first non-active layer, for example from solution or by means of Vakuumverda tion, the reactive surface is sealed, which also the reaction is stopped.

A further advantage of the method is thus that the layer thickness of the insulation of a conductor structure can be controlled very precisely over the duration of the thermal treatment, that is to say the heat supplied to the at least one conductor structure for forming the Lewis adduct. When the temperature drops below the first threshold temperature or below a second threshold temperature, the crosslinking stops. Non-crosslinked areas and excess predetermined material can be removed by means of a rinsing process

In various embodiments, the Lewis adduct forms a dielectric layer on the exposed surface of the at least one conductor structure, for example, an organic dielectric layer. The crosslinking of the predetermined material from the solution with the surface of the at least one conductor structure takes place starting from all surfaces and continues uniformly. Another advantage of the method is thus an exact overmoulding of all activated / functionalized areas of the surfaces.

It can be achieved by means of this method exact layer structures with very little thickness variation of the individual layers and with a clear separation or delimitation of the materials of the two layers.

In various embodiments, the method further comprises forming a further Lewis adduct on the Lewis adduct on the exposed surface of the at least one conductor structure.

In the crosslinking reaction, i. when forming the Lewis adduct, it may be a so-called living polymerization. That is, without deactivation, reactive ends remain on the top surface of the layer of the deposited Lewis adduct which can initiate crosslinking of another layer. In this way, e.g. the thermal stability of the resist layer can be optimized. Another advantage of the method is thus that multilayer or multilayer dielectric layers, for example resist structures, can be realized.

In various embodiments, an optoelectronic device is provided. The optoelectronic component has an electrically conductive layer on a carrier, at least one conductor structure on the electrically conductive layer, wherein at least a portion of the surface of the electrically conductive layer is free of conductor structure and the at least one conductor pattern has an exposed surface, and a dielectric layer on the exposed surface of the at least one conductor pattern, the surface of the electrically conductive layer being substantially free of the dielectric Layer, and wherein the dielectric layer is formed from a Lewis adduct, Aususführungsbeispiele of the invention are illustrated in the figures and are explained in more detail below.

a schematic cross-sectional view of a portion of an optoelectronic component according to various Ausführungsbei play, - a schematic cross-sectional view of an optoelectronic component according to various embodiments; a diagram showing a method according to various embodiments for producing an optoelectronic

Component illustrated;

Figures A-C schematically reaction schemes for a

surface-induced crosslinking to form a Lewis adduct according to various embodiments;

FIGS. 5A-E are schematic representations of an optoelectronic component according to various exemplary embodiments during production; Figures 6A-D are schematic representations of an optoelectronic component according to various exemplary embodiments during manufacture; and

Figure 7 is a schematic cross-sectional view of an optoelectronic device according to various embodiments. In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional theories such as "top", "bottom", "front", "back", "front", "rear", etc. are used with reference to the orientation of the figure (s) described. Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

In the context of this description, the terms "connected", "connected" and "coupled" are used for. Describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements with provided with identical reference numerals, as appropriate.

An optoelectronic component which has two flat, optically active sides can be designed to be transparent or translucent in the connecting direction of the optically active sides, for example as a transparent or translucent organic light-emitting diode. A planar optoelectronic component can also be referred to as a planar optoelectronic component.

However, the optically active region can also have a planar, optically active side and a flat, optically inactive side, for example an organic light-emitting diode, which is set up as a so-called top emitter or bottom emitter. The optically inactive side may be transparent or translucent in various embodiments, or be provided with a mirror structure and / or an opaque substance or mixture of substances, for example for heat distribution. The beam path of the optoelectronic component can be directed, for example, on one side. The first electrode, the second electrode and the organically functional layer structure can each be formed over a large area. As a result, the optoelectronic component can have a coherent luminous area which is not structured into functional subareas, for example a luminous area segmented into functional areas, or a luminous area which is formed by a large number of picture elements (pixels). As a result, a large-scale Abs rahlung of electromagnetic radiation from the optoelectronic device can be made possible. "Large area" may mean that the optically active side of a surface, for example, a contiguous area, for example, greater than or equal to a few square millimeters, for example, larger For example, the optoelectronic component may have only a single contiguous luminous surface, which is caused by the large-area and contiguous formation of the electrodes and the organic functional layer structure,

FIG. 1 shows, in a schematic cross-sectional view, a region 100 of an optoelectronic component which will be described in more detail below.

In various embodiments, at least one conductor structure 108 is formed on a substrate 102. FIG. 1 illustrates three conductor structures 108 and one conductor structure 108, respectively, which has three conductor structures.

The conductor pattern 108 is structured on the surface 114 of the substrate 102 such that a portion 116 of the surface 114 of the substrate 102 is substantially free of conductor structure. The conductor pattern 108 has an exposed surface 112 on which a dielectric layer 110 is formed. Dielectric layer 110 comprises or is formed from a Lewis adduct 110. The surface 114 of the substrate 102 is substantially free of the dielectric layer 110 and the Lewis adduct 110, respectively.

The substrate 102 may comprise, for example, an electrically conductive layer 106 on a carrier 104. The conductor structure 108 is formed, for example, electrically conductive. The conductor structure 108 is formed, for example, on the electrically conductive layer 106, that is to say on the surface 114 of the electrically conductive layer 106, and is electrically conductively connected thereto. The electrically conductive layer 106 with the at least one conductor structure 108 may be in different

Embodiments be an electrode structure 118 of the optoelectronic component. Alternatively, the conductor structure 108 with the substrate 102 form an electrode structure 120 of the optoelectronic component, for example in the case that the carrier 104 is designed to be electrically conductive. The dielectric layer 110 may optionally be part of the electrode structure 118, 120.

By means of the conductor structure 108, the transverse electrical conductivity of the electrically conductive layer 106 can be increased, i. the lateral current distribution in the electrically conductive layer 106 can be improved by means of the at least one conductor structure 108, for example in the case where the electrically conductive layer is formed from a transparent conductive material, for example ITO.

In other words, in various embodiments, the electrically conductive layer 106 is formed, for example, of a transparent, conductive material. The conductor structure 108 is formed with a higher electrical conductivity than the electrically conductive layer 106. The electrically conductive layer 106 is at least partially exposed at the surface of the carrier 104 and the at least one conductor structure 108 is formed on the electrically conductive layer 106. The conductor structure 108 is formed, for example, as a so-called busbar on the substrate 102 or for the substrate 102, for example with respect to the electrically conductive layer 106 on the carrier 10. The conductor structure 108 is, for example, by means of a

Mask process or screen printing structured formed. In various embodiments, a plurality of conductor patterns 108 are formed on the substrate 102, ie at least a first conductor pattern and a second conductor pattern. A conductor structure (s) may be formed in the form of one or more electrically conductive lines, one or more electrically conductive contact points, and / or contact holes on or over the substrate 102. Multiple leads _» contact points or contact holes can be arranged laterally spaced apart on the substrate 102. Several lines, contact points or contact holes can be electrically connected to one another, for example indirectly by means of an electrically conductive layer 106 of the substrate on which they are formed, or by means of a contact line to which they are connected.

In various embodiments of the method, the conductor pattern 108 comprises or is formed from a plurality of nanowires.

When using silver nanowires as a conductor structure

108, the production of the at least one conductor structure 108 from a Lewis acidic solvent. As a result, the functionalization of the surface 112 of the at least one conductive pattern 108 remains intrinsically after the at least one conductive pattern 108 has dried. In various embodiments of the process, the Lewis adduct 110 is electrically non-conductive.

In various embodiments of the method, the Lewis adduct 110 is formed as a dielectric layer on the exposed surface 112 of the at least one conductor pattern 108, for example as an organic dielectric layer. In various Ausführungsbei play the method covers the Dielectric layer substantially the entire exposed surface 112 of the at least one Lei erstruktur 108. The gesarate surface is the surface that would otherwise be exposed or would be in physical and electrical contact with the organic functional layer structure. In other words, the dielectric layer is formed such that the conductor pattern 108 is electrically insulated by means of the dielectric layer with respect to the organically functional layer structure. The dielectric layer overmolds the conductor pattern 108 thereto.

In various embodiments of the method, the dielectric layer is formed to a thickness in a range of about 5 nm to about 100 nm, for example, in a range of about 10 nm to about 60 nm, for example, in a range of about 15 nm to about 50 nm ,

FIG.2 shows a schematic cross-sectional view of an optoelectronic component 200. At or above the substrate 102 _', for example, over the electrically conductive layer 106, the at least one conductor structure 108 and the dielectric layer 110 may be formed 202 in various embodiments, an organic functional layer structure, and On or above the organic functional layer structure 202, a further electrically conductive layer 204 may be formed. In other words, the electrically conductive layer 106 may form a first electrode and the further electrically conductive layer 204 may form a second electrode, between which the organic functional layer structure 202, the conductor structure 108 and the dielectric layer 110 are arranged.

The dielectric layer 110 electrically insulates the conductor pattern 108 with respect to the organic functional one Layer structure 202, so that a charge carrier transport, ie a current flow, from the electrically conductive layer 106 through the organic functional layer structure 202 to the further electrically conductive layer 204 and not from the at least one conductor structure 108 through the organic functional layer structure 202 to the other electrically conductive layer 204.

FIG. FIG. 3 illustrates a flowchart of a method 300 for producing an optoelectronic component which is substantially similar to one of the above

Embodiments may correspond.

In various embodiments, the method 300 includes forming 302 at least one conductor pattern on or over a surface of a substrate.

Furthermore, the method comprises applying 304 a predetermined material on or over the surface of the at least one conductor structure and the surface of the substrate.

Furthermore, the heating comprises at least one of the at least one conductor structure 306 or has a first threshold temperature.

FIG. 4A-C schematically show reaction schemes for surface-induced crosslinking to form a Lewis adduct. In various embodiments of the method, the given material comprises or the given material is an organic compound having a heterocyclic four-membered ring, for example, an organic compound having an oxetane group or a 1,3-propylene oxide group (Formula I): Formula I:

wherein R and R ^'are independently selected from the group: hydrogen, linear or branched C1-20 alkyl, C2-12 alkenyl, C2-12 alkynyl, C _{_3-8} cycloalkyl or cycloalkenyl, C ₆ -i4 aryl, 5 - 1 heteroaryl-membered ring, wherein the 1 to 4 ring atom may be independent of each other: nitrogen, oxygen, sulfur; 5 - 14-membered

Heteroalicyclicl, where the 1 to 4 ring atom may be independent of one another: nitrogen, oxygen, sulfur, alkylaryl, arylalkyl, alkylheteroaryl and heteroarylalkyl.

In various embodiments, R ^"is a methyl group, In other words, a group, here R, has a less complex and sterically demanding structure, for example a less long and / or branched structure, for example, the accessibility and the mobility of the oxetane. Group to be optimized for the reaction.

In various embodiments of the method, the given material is an oxetane-nationalized one

Polymer.

FIG.4A shows the initialization of a network of a

Oxetane-functionalized monomer 406 with a Lewis functionalized surface 402, for example PEDOT / HPSS. The substrate 402 may be formed or functionally ionized to provide an easily transferable proton or electron at the surface, i. Lewis-sour or Lewis -based.

A proton 408 of the surface 402 is transferred in a transfer to an oxetane group, leaving a negative charge 404 on the surface 402. By means of this transition, the oxetane-functionalized monomer can be deposited or deposited on the functionalized surface of the substrate 402. In other words, the formation of the Lewis adduct 110 above the first threshold temperature has various embodiments. a

Crosslinking reaction, for example, a living polymerization.

FIG. 4B illustrates why the polymerization can be stopped by means of charge separation, since a transferred proton 408 of an oxetane-functionalized polymer 410 already bonded to the surface 402 and the negative charge 404 on the surface 402 can attract by Coulomb force. The oxeta-functionalized polymer 410 already bonded to the surface 402 forms an organic layer which essentially corresponds to the above-described dielectric layer or the Lewis adduct,

FIG.4C illustrates how the polymerization, that is, the formation of the Lewis adduct, continues as a counterion 412 is capable of moving through the organic layer of the Lewis adduct.

In FIGS. FIGS. 5A-5E illustrate, in schematic cross-sectional views, fabrication of an opto-electronic device according to various embodiments, wherein the thus-fabricated electronic structure may substantially conform to an electronic structure described above.

In a step 500 illustrated in FIG. 5A, the provision of a conductor pattern 108 having an exposed surface 112 on a surface of a substrate 102 is illustrated, with a portion 116 of the surface 114 of the surface of the substrate 102 on which Conductor structure 108 is formed, is free of conductor structure 108,

In a further step 510 illustrated in FIG. F1G.5B, the surface 114 of the substrate 102 and the surface 112 of the at least one conductor pattern 108 are subjected to functionalization such that a chemical contrast is formed with respect to a chemical reaction with a given material becomes. In other words; On the exposed surface 112, in various embodiments, radio ionization 512, such as forming or depositing a proton donor, is performed. The functionalization of the surface 112 of the at least one conductor pattern 108 may be selective with respect to the surface 114 of the substrate 102. For example, the functionalization 512 with regard to the formation of the Lewis adduct is formed essentially only on the surface 112 of the at least one conductor structure 108. The surface 114 of the substrate 102 may be substantially free of this functionalization 512 to form a Lewis adduct, as will be shown in more detail later. In other words; at least the surface 112 of a conductor pattern 108 may be selectively fied with respect to the surface 114/116 of the substrate 102 so that a Lewis adduct may be formed on the functionalized surface 512 of the at least one conductor pattern.

In various Ausführungsbe i games of the method, the conductor structure 108 as a functionalization, for example, a Lewis acid or a Lewis base, for example, depending on the given material, so that by means of the functionalization and the given material, a Lewis adduct is bildbar. The

Conductor structure 108 may be formed, for example, wet-chemically, for example by means of screen printing. The screen printing paste, ie the paste from the Ladder structure is formed, for example, the Lewis acid or the Lewis base included before the screen printing paste is applied to the substrate. The Lewis acid or the Lewis base can be present as functionalization after the screen printing paste has dried on the surface of the conductor structure.

Alternatively, the exposed surface 112 of the at least one conductor pattern 108 is functionalized so that the Lewis adduct 110 can be formed on the exposed surface of the at least one conductor pattern 108.

In various embodiments of the method, a proton donor or an electron donor is formed on the exposed surface 112 of the at least one conductor pattern 108, depending on the given material during functionalization. The functionalization can be carried out, for example, a redox reaction, an oxidation, a sulfidation, wet-chemical, and / or by means of a self-assembled Monosehicht if seifassembled monolayer - SAM).

The self-assembled Monosehicht can for example be formed from monomers, oligomers or polymers each having a head group _» a spacer unit and an anchor group. The head group has a Lewis funk ionale group, for example, a Lewis acid function, such as an oxetane group. For example, the spacer group has an alkyl chain. The armature group is designed to be selectively connected to the conductor structure, for example to the metallization or to a busbar. An anchor group may be, for example: a carboxy group (R-COOH), a nitrile group (R-CN), a thiol group (R-SH), a phosphoric acid group (R-PO (OH) 2), The carboxy group binds, for example, to a conductor structure with / of nickel, titanium. The nitrile group, for example, binds to a conductor structure with silver. The thiol group binds For example, to a Lei erstruktur with / from silver, gold, chrome, copper. For example, the phosphoric acid group binds to a ladder structure made of aluminum and ITO.

In a further step 520, illustrated in FIG. 5C, a solution 522 which comprises in a solvent a given material which can form a Lewis adduct with the functionalization 512 of the surface 112 of the at least one conductor structure 108 is applied to or via the Surfaces 112/512, 116 of the at least one conductor pattern 108 and the substrate 102 applied. In other words; In various embodiments of the method, the predetermined material is applied wet-chemically, for example dissolved in a solvent on the exposed surfaces 112 of the at least one conductor structure 108 and the substrate 102. The solution 522 can be applied, for example wet-chemically, for example in a spin coating (spin coating) , Alternatively, the substrate 102 with the at least one conductor pattern 108 may be immersed in the solution 522, for example as a dip coating. Furthermore, further wet-chemical processes are possible, for example the so-called slot die coating or inkjet printing (inkjet printmg).

Suitable solvents are, for example, common polar and non-polar organic solvents and their

Mixtures, for example from the group of toluene, xylene, phenetole, dichloromethane, tetrahydrofuran.

Suitable functionalized polymers can be, for example, polystyrenes, polypyrrole, polyaniline, polyparaphenyls, polythiophene, but also block copolymers with functionalized head groups. In a further step 540, illustrated in P1G.5D, at least one conductor pattern 108 is heated, illustrated in FIG. 5D by means of Q1. By means of the heating Ql, the temperature of the at least one conductor system 108 is increased. Upon exceeding a first threshold temperature, a chemical reaction begins between the functionalized surface 512 of the at least one conductor pattern 108 and the predetermined material of the solution 522.

By means of the functionalization 512 of the at least one conductor structure 108, a Lewis adduct 110, for example a dielectric layer 110, may be formed on this conductor structure 108, the surface of the substrate which is also exposed to the solution 522 being substantially free of the Lewis adduct remains.

Starting from the functionalized surface 512 of the at least one conductor structure, a uniformly thick layer is formed at all points which have a Lewis-activated surface relative to the given material, for example a Lewis acidic surface with respect to an oxetane-functionalized monomer or polymer as a given material , and have a temperature above the first threshold temperature,

In various exemplary embodiments of the method, the temperature is increased by means of an electric current through the conductor structure 108 to at least the first swinging temperature.

In various exemplary embodiments of the method, the temperature of at least the at least one conductor structure 108 is increased by means of an irradiation of the at least one conductor structure 108 with an electromagnetic radiation. The irradiation is for example a laser irradiation or an infrared irradiation. In various exemplary embodiments of the method, the temperature of the at least one conductor structure 108 is increased indirectly by means of an increase in the temperature of the substrate,

In various embodiments of the method, the substrate 102 with the at least one conductor pattern 108 is arranged in raising the temperature of the at least one conductor pattern 108 in a solution. The temperature of the at least one lei erstruktur 108 increases by means of increasing the temperature of the solution or a heated solution. In other words, in various embodiments of the method, the temperature of at least the at least one conductive pattern 108 is maintained along with a warm solution 522, i. the temperature of the solution is at or above the first threshold temperature such that the Lewis adduct is formed on the surface of the at least one conductive pattern upon immersion in the solution, or heating the solution to a temperature of the solution at or above the first threshold temperature ,

In various embodiments of the method, the temperature of at least the at least one conductor pattern 108 in an oven is increased. Alternatively or additionally, the temperature of at least the at least one conductor structure 108 is increased by means of a hot-air irradiation. Further illustrated in FXG.SD:

In various embodiments of the method, at least one first conductor pattern 524 and one second conductor pattern 526 are formed on the substrate 102. The temperature of the first conductor pattern 524 and the temperature of the second conductor pattern 526 are increased substantially equally, for example to an approximately equal value of at least the first threshold temperature. As a result, a dielectric or insulating layer 110 with the Lewis adduct can be formed essentially simultaneously on two or more conductor structures.

In a further step 550, illustrated in FIG. 5A, the solution 522 is removed from the surfaces of the substrate 102 and the Lewis adduct 110 on the at least one conductor pattern 108. The temperature of the at least one conductor structure heated above the first threshold temperature may be cooled before, during, or after removal of the solution 522. The cooling of the at least one conductor structure may be, for example, to a value below a second threshold temperature, below which the crosslinking reaction of the given material with the surface of the already deposited Lewis adduct on the surface of the at least one conductor structure is stopped. In other words, when lowering the temperature stops the

Crosslinking reaction. Excess solution, i. Excess solvent and excess functionalized monomers can be removed, also referred to as development.

In other words, in various embodiments, the method further comprises removing the predetermined material after forming the Lewis adduct 110 from the surface of the substrate and from the Lewis adduct 110 on the exposed surface 112 of the at least one conductor pattern 108. The removal of the Lewis adduct 110 thus represents a development process. Development takes place, for example, after the temperature has been reduced to a value below the second one

Threshold temperature. The solution with the given material, for example, rinsed off the surfaces of the substrate and the coated with the Lewis adduct 110 conductor structure 108, for example with the same solvent as that in which the given material was dissolved.

In various embodiments of the method, after forming the Le is adduct 110 having a predetermined thickness, the temperature of the at least one conductor pattern 108 having a temperature above the first threshold temperature becomes a second one

Threshold temperature cooled. At the second threshold temperature, essentially the formation of the Lewis adduct 110 by means of the given material is prevented. In various embodiments of the method, after forming the Lewis adduct 110 having a predetermined thickness, the temperature of the at least one conductor pattern 108 having a temperature above the first threshold temperature is cooled to the second threshold temperature. In other words, above the first threshold temperature, the Lewis adduct 110 is formed. Below the second melting temperature, the crosslinking reaction is stopped and no Lewis adduct 110 is formed. The second threshold temperature is approximately equal to or less than the first threshold temperature. In various embodiments, the method includes forming at least one conductor pattern 108 on or over a surface 114 of a substrate 102, wherein at least a portion 116 of the surface 114 of the substrate 102 is free of conductor pattern 108 and the at least one conductor pattern 108 has an exposed surface 112 it is. At least the exposed surface 112 of the at least one conductor pattern 108 is formed such that a Lewis adduct can be formed on the exposed surface 112 of the at least one conductor pattern 108 with respect to a given material

Surface of the substrate substantially remains subject to change from the Lewis adduct. The method further comprises applying the predetermined material to or over the Surface of the at least one conductor structure and the surface of the substrate. The method further comprises heating the at least one conductor pattern to or above a first threshold temperature such that the surface of the at least one conductor pattern has a temperature greater than or equal to the first threshold temperature and the surface of the substrate is at a temperature less than the first threshold temperature from the first Schwe11enwer11emperatur forms the Lewis adduct.

Thereby, the entire exposed surface of the substrate and the conductor pattern can be unactivated, for example by means of an acid rinse, so that at least one monolayer of acid remains on the exposed surface. The given material may be dissolved in a solvent as described above, i. The temperature of the at least one conductor structure can be increased, for example, by means of a current supply through the at least one conductor structure or by selective heating of the at least one conductor structure, for example by induction or local irradiation by means of a laser. Starting from the heated surface, a uniformly thick layer is formed at all points exceeding the crosslinking temperature {first threshold temperature). at

Lowering the temperature (below the first and second threshold temperatures, respectively) stops the crosslinking reaction, and excess solvent and excess monomers of the given material can then be removed.

In FIGS. FIGS. 6A-6D illustrate, in schematic cross-sectional views, manufacturing of an optoelectronic component according to various exemplary embodiments, wherein the optoelectronic component produced in this way substantially with a. above described optoelectronic component can match. In a step 600, illustrated in FIG. 6A, that is

Providing a conductor pattern 108 having a surface 112 formed thereon. Lewis adduct 110 is illustrated on a surface of a substrate 102. A portion 116 of the surface of the surface of the substrate 102 on which the conductor pattern 108 is formed is free of the conductor pattern 108. The structure provided may, for example, substantially correspond to the structure illustrated in FIG. 5A.

In the crosslinking reaction, i. When forming the Lewis adduct, it may be a so-called living polymerization. i.e .; without deactivation, reactive ends remain on the surface of the layer of the formed or deposited Lewis adduct, which can initiate crosslinking of another layer.

In this way, e.g. the thermal stability of the resist can be optimized. Another advantage of the method is thus that multi-layered or multi-layered dielectric layers, for example resist structures, can be realized.

In a further step 61.0, illustrated in FIG. 6B, a further solution 602, which comprises in another solvent a further given material, which interacts with the reactive ends of the Lewis adduct on the conductor structures 108. can form further Lewis adduct, applied to or over the surfaces of the Lewis Adduk s 110, optionally the at least one conductor structure 108 and the substrate 102. The further solvent and / or the further predetermined material may correspond to one embodiment of the solvent or of the given material and be the same or different from these.

The further solution 602 can be applied by wet-chemical means, for example in one Spin coating. Alternatively, the substrate 102 with the at least one conductor pattern 108 and the Lewis adduct 110 may be dipped into the solution 602. In a further step 620, illustrated in FIG. 6C, at least one conductor pattern 108 is heated, illustrated in FIG. 6C by means of Q2. By means of the heating Q2, the temperature of the at least one conductor structure 606 is increased, for example above the first threshold temperature, so that the further predetermined material with the Lewis adduct on the surface of the at least one conductor structure 606 can chemically react and form another Lewis adduct 604 can. The further Lewis adduct 604 may be the same or different from the previously formed Lewis adduct 110.

Starting from the Lewis adduct on the surface of the Q2 heated conductor structure 606 creates a uniformly thick layer at all points,

Furthermore, in FIG. 6C:

In various embodiments of the method, at least a first conductor pattern 606 and a second conductor pattern 608 are formed on the substrate 102. The temperature of the first conductive pattern 606 is raised to a temperature greater than the first threshold temperature and the temperature of the second conductive pattern 608 remains substantially unchanged and / or below the first threshold temperature.

For example, the temperature of the first conductor pattern 606 may be selectively increased with respect to the second conductor pattern 608 by means of laser irradiation or selective application of the first conductor pattern 606. As a result, a further Lewis adduct 604 is formed on the Lewis adduct 110 of the first conductor pattern 606. The first conductor pattern 606 thus has, for example, a multilayer dielectric or insulating layer, which differs from the dielectric or insulating layer on the second conductor pattern 608 in thickness and / or material.

In other words; In various embodiments, the method further comprises forming another

Lewis adduct 604 on the Lewis adduct 110 on the exposed surface 112 of the at least one conductor pattern 108. The further Lewis adduct 604 may be the same or different than the Lewis adduct 110 on the surface 112 of the at least one conductor pattern 108.

In a further step 630, illustrated in FIG. 6D, the further solution 602 is removed from the surfaces. The temperature of the at least one over the first

Ideally heated first conductor pattern 606 may be cooled before, during, or after removal of solution 602. The cooling of the first conductor structure 606 may be, for example, to a value below a second threshold temperature, below which the crosslinking reaction of the further predetermined material is stopped with the surface of the already deposited further Lewis adduct. In other words at

Temperature reduction stops the crosslinking reaction, excess further solution, i. Excess additional solvent and excess further predetermined material, for example other functionalized monomers, can be removed.

In various embodiments of the method, after forming the further Lewis adduct 604 with a predetermined thickness, the temperature of the first conductor pattern 606 having a temperature above the first threshold temperature, to a second

Threshold temperature r cooled. At the second threshold temperature, essentially the formation of the further Lewis adduct 606 by means of the given material is prevented. In different

The exemplary embodiment of the method is based on the formation of the further Lewis adduct 110 having a predetermined thickness, the temperature of the first conductor structure 108 having a temperature above the first threshold temperature

Cooling temperature cooled. In other words, above the first threshold temperature, the further Lewis adduct 604 is formed. Below the second threshold temperature, the crosslinking reaction is stopped and no further Lewis adduct 604 is formed. The second threshold temperature is approximately equal to or less than the first threshold temperature value.

In various embodiments, the method further comprises removing the predetermined material after forming the further Lewis adduct 604. Development proceeds, for example, after reducing the temperature to below the second

Swell value temperature. The solution with the other predetermined material, for example, rinsed, for example, with the same additional solvent as that in which the other predetermined material was dissolved.

FIG. 7 shows an exemplary embodiment of an optoelectronic component 700, which can essentially speak one of the embodiments illustrated above. The optoelectronic component 700 has a carrier 12. The carrier 104 may be designed to be taut or transparent. The carrier 104 serves as a carrier element for electronic elements or layers, for example, light-emitting elements. The carrier 104 may, for example, comprise or be formed from plastic, metal, glass, quartz and / or a semiconductor material. Further, the carrier 104 may be a plastic film or a laminate with one or more plastic films on iron or formed therefrom. The carrier 104 may be mechanically rigid or mechanically flexible. An optoelectronic layer structure is formed on the carrier 104. The optoelectronic

Layer structure comprises a first electrode layer 14 having a first contact portion 16, a second contact portion. 18 and a first electrode 106, also referred to as electrically conductive layer 106, has. The carrier 104 with the first electrode layer 14 may also be referred to as the substrate 102. Between the carrier 104 and the first electrode layer 14, a first, not shown, barrier layer, for example a first barrier thin layer, may be formed.

The first electrode 106 is electrically insulated from the first contact portion 16 by means of an electrical insulation barrier 21.

In various embodiments, the isolation barrier 21 is formed from a Lewis adduct, for example as described in the Lewis adduct 110 or dielectric layer 110, for example, simultaneously or as part of the Lewis adduct 110 on the surface of the at least one conductor pattern.

The second contact section 18 is electrically coupled to the first electrode 106 of the optoelectronic layer structure. The first electrode 106 may be formed as an anode or as a cathode. The first electrode 106 may be translucent or transparent. The first electrode 106 comprises an electrically conductive material, for example metal and / or a conductive transparent oxide (TCO) or a layer stack of several layers comprising metals or TCOs. For example, the first electrode 106 may comprise a layer stack of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers. The first electrode 106 may comprise, as an alternative or in addition to the materials mentioned: networks of metallic nanowires and particles, for example of Ag, networks of carbon nanotubes, graphene particles and layers and / or networks of semiconducting nanowires.

Transparent conductive oxides are transparent, conductive materials, for example metal oxides, such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary

Metal oxygen compounds, such as ZnO, SnO 2, or In 2 O 3, are also ternary

Metal oxygen compounds such as AIZnO, Zn ₂ SnO ₄ , CdSnO ₃ , ZnS O, Mgln ₂ O ₄ , GalnO ₃ , Zn ₂ In ₂ O ₅ or I Sn ₃ O 2 or mixtures of different transparent conductive oxides to the group of TCOs.

The first electrode 106 may comprise, as an alternative or in addition to the materials mentioned: networks of metallic nanowires and particles, for example of Ag, networks of carbon nanotubes, graphene particles, and layers and / or networks of semiconductive nanowires. For example, the first electrode 106 may include or be formed of one of the following structures: a network of metallic nanowires, such as Ag, that are combined with conductive polymers, a network of carbon nanotubes, combined with conductive polymers and / or graphene layers and composites. Further, the first electrode 106 may include electrically conductive polymers or transition metal oxides.

The first electrode 106 may, for example, a

Have layer thickness in a range of 10 nm to 500 nm, for example from 25 nm to 250 nm, for example from 50 nm to 100 nm.

The first electrode 106 may have a first electrical connection on iron to the first electrical one

Potential can be applied. The first electrical potential may be provided by a power source (not shown), for example from a power source or a voltage source. Alternatively, the first electrical potential may be applied to the carrier 104 and indirectly supplied to the first electrode 106 via the carrier 104. The first electrical potential may be, for example, the ground potential or another predetermined reference potential.

Above the first electrode 106 is an optically functional layer structure, for example, an organic functional Schichtens structure 202, the optoelectronic

Layer structure formed. The organic functional layer structure 202 may comprise, for example, one, two or more sublayers. For example, the organic functional layer structure 202 may include a hole injection layer, a hole transport layer, an emitter layer, an electron transport, and / or an electron injection layer. The

Hole injection layer serves to reduce the band gap between the first electrode and hole transport push. In the hole transport layer, the hole conductivity is larger than the electron conductivity. The hole transport layer serves to transport the holes. In the

Electron transport layer is the electron conductivity greater than the hole conductivity. The

The electron transport layer serves to transport the electrons. The electron injection layer serves to reduce the band gap between the second electrode and the electron transport layer. Furthermore, the organic functional layer structure 202 may have one, two or more functional layer structure units, each of which has the sub-layers and / or further intermediate layers. Over the organic functional layer structure 202, a second electrode 204, also referred to as a further electrically conductive layer 204, of the optoelectronic layer structure, which is electrically coupled to the first contact section 16, is formed. The second electrode 204 may be formed according to any one of the configurations of the first electrode 106, wherein the first electrode 106 and the second electrode 204 may be the same or different. The first electrode 106 serves, for example, as the anode or cathode of the optoelectronic layer structure. The second electrode 204 serves as a cathode or anode of the optoelectronic layer structure corresponding to the first electrode.

The optoelectronic layer structure is an electrically and / or optically active region. The active region is, for example, the region of the optoelectronic component 700 in which electrical current flows to the base of the optoelectronic component 700 and / or in which electromagnetic radiation is generated or absorbed. On or above the active area, a getter structure (not shown) may be arranged. The getter ^■ · layer can be transiuzent, transparent or opaque trained. The getter layer may include or be formed of a material that absorbs and binds substances that are detrimental to the active area. Over the second electrode 204 and partly over the first contact section 16 and partially over the second contact section 18, an encapsulation layer 24 of the optoelectronic layer structure is formed, which encapsulates the optoelectronic layer structure. The encapsulation layer 24 may be formed as a second barrier layer, for example as a second barrier thin layer. The encapsulation layer 24 may also be referred to as a thin-film encapsulation. The encapsulation layer 24 forms a barrier to chemical contaminants or atmospheric agents, in particular to water (moisture) and oxygen. The encapsulation layer 24 may be formed as a single layer, a layer stack, or a layered structure. The encapsulation layer 24 may include or be formed from: alumina, zinc oxide, zirconia, titania, hafnia, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride,

Silicon oxynitride, indium-tin oxide, indium-zinc oxide, aluminum-doped zinc oxide, poly (p-phenylene terephthal ha1ami d), nylon 66, and mixtures and alloys thereof. Optionally, the first barrier layer may be formed on the carrier 104 corresponding to a configuration of the encapsulation layer 24.

In the encapsulation layer 24, a first recess of the encapsulation layer 24 is formed above the first contact section 16, and a second recess of the encapsulation layer 24 is formed above the second contact section 18. In the first recess of the encapsulation layer 24, a first contact region 32 is exposed and in the second recess of the encapsulation layer 24, a second contact region 34 is exposed. The first contact region 32 is used for electrically contacting the first con tact absc hni11s 16 and the second contact region 34 serves for electrically contacting the second contact portion 18th An adhesive layer 36 is formed over the encapsulant rail 24. The adhesive layer 36 comprises, for example, an adhesive, for example an adhesive, for example a laminating adhesive, a lacquer and / or a resin. The Haftmit elschicht 36 may for example have particles that scatter electromagnetic radiation, such as light-scattering particles.

Over the Haftmitteischicht 36, a cover body 38 is formed. The adhesive layer 36 serves to fasten the cover body 38 to the encapsulation layer 24. The cover body 38 has, for example, plastic, glass and / or metal. By way of example, the covering body 38 may essentially be formed from glass and have a thin metal layer, for example a metal foil, and / or a graphite layer, for example a graphite laminate, on the glass body. The cover body 38 serves to protect the conventional optoelectronic component 700, for example against mechanical forces from the outside. Further, the cover body 38 may serve for distributing and / or dissipating heat generated in the conventional optoelectronic component 700. For example, the glass of the cover body 38 can serve as protection against external influences, and the metal layer of the cover body 38 can serve to distribute and / or dissipate the heat generated during operation of the conventional optoelectronic component 700.

Embodiment 1, in connection with Figure 1 to

7, a method of manufacturing an optoelectronic device (200) comprising method (300); Forming (302) at least one Lei erstruktur

(108) on or over a surface (114) of a substrate (102), wherein at least a portion (116) of the surface (114) of the substrate (102) is free of conductor structure (108) and the at least one conductor pattern (108) having exposed surface (112), wherein at least the exposed surface (112) of the at least one conductor pattern (108) and the surface of the substrate

(114) are formed such that on the exposed surface (112) of the at least one conductor structure (108) with respect to a given material, a Lewis adduct (110) can be formed and the surface (114) of the substrate (102) substantially free from the Lewis adduct (110) remains; Depositing (304) the predetermined material on or over the surface of the at least one conductor pattern (108) and the surface (114) of the substrate (102); and heating (306) at least the at least one conductor pattern (108) to or above a first threshold temperature, wherein the Lewis adduct (110) forms from the first threshold temperature.

Exemplary Embodiment 2, which is described in connection with FIGS. 1 to 7, is a method for producing an optoelectronic component (200) comprising method (300): forming (302) at least one conductor structure (108) on or over a surface (114 ) of a substrate (102), wherein at least a portion (116) of the surface (114) of the substrate (102) is free of conductor structure (108) and the at least one conductor structure (108) ei e freel legendary surface (112). wherein at least the exposed surface (112) of the at least one conductive pattern (108) is formed such that a Lewis adduct (110) can be formed on the exposed surface (112) of the at least one conductive structure (108) with respect to a given material; Depositing (304) the predetermined material on or over the surface of the at least one conductor pattern (108) and the surface (114) of the substrate (102); and heating (306) the at least one conductor pattern (108) to or above a first threshold temperature such that the surface of the at least one conductor pattern has a temperature greater than or equal to the first threshold temperature and the surface of the substrate is at a lower temperature first threshold temperature, wherein forms from the first threshold temperature, the Lewis adduct (110). In Embodiment 3, Embodiment 1 or 2 optionally includes that the conductor pattern (108) comprises or is formed of a plurality of nanowires and wherein the conductor pattern (108) comprises a Lewis acid or a Lewis base.

In exemplary embodiment 4, embodiment 1 or 2 optionally comprises functionalizing the surface (112) of the at least one conductor structure (108) so that the Lewis adduct can be formed on the surface of the at least one conductor structure (108), during functionalization a proton donor or electron donor is formed on the surface (112) of the at least one conductor pattern (108). In exemplary embodiment 5, exemplary embodiment 4 optionally has the surface (112) of the at least one conductor structure (108) by means of a self-organizing monolayer. is functionalized, wherein the self-assembling monolayer Lewis acidic head groups or Lewis basic head groups has.

In the exemplary embodiment 1 to 5, the embodiment 1 to 5 optionally comprises that the substrate (102) has an electrically conductive layer (106) on a carrier (104), and the at least one conductor structure (108) is electrically conductive and electrically conductive layer (106) is formed electrically conductively connected, and wherein at least in an area on or above the substrate (102), the at least one conductor structure (108) and the Lewis adduct (110) an organic functional layer structure (202) and on or over the organically functional layer structure (202) a further electrically conductive layer (204) is formed. In the exemplary embodiment 7, the exemplary embodiment 1 to 6 optionally has the specified material applied wet-chemically, in particular dissolved in a solvent applied at least to the surfaces (112/114) of the at least one conductor structure (108) and the substrate (102).

In the exemplary embodiment 8, the embodiment 1 to 7, optionally, that the predetermined material has an oxetane group, in particular an oxe is a functionalized polymer.

In Embodiment 9, the embodiment 1 to 8 optionally includes that the formation of the Lewis adduct (110) above the first threshold temperature has a crosslinking reaction, in particular, a living polymerization.

In the exemplary embodiment 10, the embodiment 1 to 9 optionally has the effect that the temperature is increased by means of an electrical current through the conductor structure (108) to at least the first threshold temperature.

In the exemplary embodiment 11, the embodiment 1 to 10 optionally has at least e ine first

Conductor structure (524) and a second conductor pattern (526) on the substrate (102) are formed, wherein the temperature of the first conductor pattern (524) and the temperature of the second conductor pattern (526) are increased substantially equal, in particular to an approximately equal value of at least the first

Threshold temperature.

In the exemplary embodiment 12, the exemplary embodiments 1 to 11 optionally have at least one first conductor structure (606) and a second conductor structure (608) formed on the substrate (102), wherein the temperature of the first conductor structure (606) on a Temperature is greater than the first threshold temperature is increased and the temperature of the second conductor structure

(608) remains substantially unchanged and / or below the first threshold temperature.

In embodiment 13, embodiments 1 to 12 optionally include that the method further comprises removing the predetermined material after forming the Lewis adduct (110) from the surface of the substrate {114) and from the Lewis adduct (110). on the surface (112) of the at least one conductor pattern (108).

In the exemplary embodiment 14, the exemplary embodiments 1 to 13 optionally show that the Lewis adduct (110) forms a dielectric layer on the surface (112) of the at least one conductor structure (108), in particular an organic, dielectric layer.

In Embodiment 15, Embodiment 1 to 14 optionally includes that the method further comprises forming a further Lewis adduct (604) on the Lewis adduct (110) on the surface (112) of the at least one conductor pattern (108). Embodiment 16, which is described in connection with FIGS. 1 to 7, is an optoelectronic component, comprising: an electrically conductive layer (106) on a carrier (102), at least one conductor structure (108) on the electrically conductive layer (106), wherein at least a portion of the surface (114) of the electrically conductive layer (106) is free of conductor pattern (108) and the at least one conductor pattern (108) has an exposed surface (118), and a dielectric layer (110, 604) on the a surface (112) of the at least one conductor pattern (108), wherein the surface (114, 116) of the electrically conductive layer (106) is substantially free of the dielectric layer (110, 604), and wherein the dielectric layer (110, 604) is formed from a Lewis adduct.

The invention is not limited to the disclosed embodiments. For example, by means of the stated method, any electrically conductive structure on a substrate can be electrically insulated with respect to the substrate environment. As a result, for example, insulation of contact surfaces of any electronic component can be formed. Furthermore, the isolation can be formed from different Lewis adducts. The electrically conductive structure is dependent on the given material that reacts chemically with the surface of the electrically conductive structure to the Lewis adduct, Lewis-basic or Lewis-sour fun ional ional, especially wet-chemical. Furthermore, exemplary embodiments of the organic, light-emitting component can be used in an analogous manner and as far as applicable to the method for. Manufacture and operation of the organic light emitting device can be applied and vice versa.

LIST OF REFERENCE NUMBERS

100 area of an optoelectronic component

102 substrate

104 carriers

106 electrically conductive layer

108 ladder structure

110 dielectric layer

112 exposed surface

114 surface of the substrate

116 area of the surface of the substrate

118, 120 electrode structure

200, 700 optoelectronic component

202 organic functional layer structure 204 electrically conductive layer

300 procedures

302, 304, 306 process steps

402 substrate

404 negative charge

406 Oxetane-functionalized monomer

408 transferred proton

410 oxo-functionalized polymer

412 counterion

500, 510, 520, 540, 550 process steps

512 functionalization

522, 602 solution

524, 526 ladder structure

Ql, Q2 heat

600, 610, 620, 630 process steps

604 Lewis adduct

606, 608 conductor structure

14 electrode layer

16, 18 contact section

21 isolation barrier

24 encapsulation layer

32, 34 contact area

36 adhesive layer

38 cover body

Claims

A method of fabricating an optoelectronic device {200}, the method (300) comprising:

Forming (302) at least one conductor pattern

(108) on or over a surface (114) of a substrate (102),

Wherein at least a portion (116) of the surface (114) of the substrate (102) is free of

Conductor pattern (108) and the at least one conductor pattern (108) has an exposed surface (112) on it,

Where at least the exposed surface

(112) having a conductive pattern (108) and the surface of the substrate (114) are formed such that on the exposed surface (112), the at least one

Conductor structure (108) with respect to a given material, a Lewis adduct (110) can be formed and the surface (114) of the substrate (102) substantially free of the. Lewis adduct (110) remains;

• applying (304) the given material

or over the surface of the at least one

Conductor pattern (108) and the surface (114) of the substrate (102); and

Heating (306) at least the at least one

Ladder structure (108) on or over a first

Schweilenwerttemperatur, with the Lewis adduct (110) forms from the first threshold temperature.

A method of making an optoelectronic device (200) comprising the method (300);

Forming (302) at least one conductor pattern

(108) on or over a surface (114) of a substrate (102), Wherein at least a part (116) of the surface (114) of the substrate (102) is free of conductor structure (108) and the at least one

Conductor pattern (108) has an exposed surface (112),

Wherein at least the exposed surface (112) of the at least one conductor pattern (108) is formed such that on the

exposed surface (112) of the at least one conductor pattern (108) with respect to a given material, a Lewis adduct (110) can be formed;

Applying (304) the predetermined material to or over the surface of the at least one conductor pattern (108) and the surface (114) of the substrate (102) and

Heating (306) the at least one conductor pattern (108) on or over a first one

Schwel lenwerttemperatur such that the surface of the at least one conductor structure has a temperature greater than or equal to the first

Threshold temperature and the surface of the substrate has a temperature less than the first threshold temperature, wherein starting from the first threshold temperature, the Lewis adduct

(110) forms.

Method (300) according to claim 1 or 2,

wherein the conductor pattern (108) comprises a plurality of

Nanowires. or is formed therefrom and wherein the conductor structure (108) comprises a Lewis acid or a Lewis base.

4. Method (300) according to claim 1 or 2,

wherein the surface (112) of the at least one

Ladder structure (108) functional! is siert, so that the Lewis adduct on the surface of the at least one conductor pattern (108) is formed, wherein the Functionalize a proton donor or a

Electron donor on the surface (112} of the

at least one conductor pattern (108) is formed.

Method (300) according to one of Claims 4,

wherein the surface (112) of the at least one

Ladder structure (108) by means of a

self-assembling monolayer is functionalized, wherein the self-assembling monolayer

Lewis acidic head groups or Lewis basic ones

Head groups. having .

The method (300) according to one of claims 1 to 5, wherein the substrate (102) is an electrically conductive

Layer (106) on a support (104), and the at least one conductor structure (108) is electrically conductive and electrically conductively connected to the electrically conductive layer (106), and wherein at least in an area on or above the substrate (102 ), at least one conductor structure (108) and the Lewis adduct (110) an organic functional layer structure (202) and on or above the organic functional layer structure (202), a further electrically conductive layer (204) is formed.

The method (300) according to any one of claims 1 to 6, wherein the predetermined material is wet-chemical

is applied, in particular dissolved in a solvent at least on the surfaces (112/114) of the at least one conductor structure (108) and the

Substrate (102) is applied.

Method (300) according to one of claims 1 to 7, wherein the given material has an oxetane group, in particular an oxetane-functionalized polymer. The method (300) of any one of claims 1 to 8, wherein forming the Lewis adduct (110) above the first threshold temperature

Crosslinking reaction, in particular a living polymerization.

Method (300) according to one of claims 1 to 9, wherein the temperature is determined by means of an electrical

Current through the conductor pattern (108) is increased to at least the first threshold temperature.

The method (300) according to any of claims 1 to 10, wherein at least one first conductor pattern (524) and one second conductor pattern (526) are formed on the substrate (102), the temperature of the first conductor pattern (524) and the temperature of the second one Leiterst uktur (526) will be increased substantially equally, in particular to approximately

same value of at least the first

Threshold temperature.

The method (300) of claim 1, wherein at least a first conductor pattern (606) and a second conductor pattern (608) are formed on the substrate (102), the temperature of the first conductor pattern (606) being higher than a temperature the first threshold temperature is increased and the temperature of the second conductive pattern (608) remains substantially unchanged and / or below the first threshold temperature.

The method (300) of any one of claims 1 to 12, further comprising;

Remove the given material after the

Forming the Lewis adduct (110) from the surface of the substrate (114) and from the Lewis adduct (110) on the surface (112) of the at least one

Ladder structure (108). The method (300) of any one of claims 1 to 13, wherein the Lewis adduct (110) is a dielectric

Layer on the surface (112) of the at least one conductor pattern (108) is formed, in particular an organic dielectric layer.

The method (300) of any one of claims 1 to 14, further comprising:

Forming a further Lewis adduct (604) on the Lewis adduct (110) on the surface (112) of the at least one conductor pattern (108).

Optoelectronic component, comprising:

an electrically conductive layer (106) on a

Carrier (102),

at least one conductor pattern (108) on the

electrically conductive layer (106), wherein at least a Tei1 the upper surface (114) of the electrically conductive layer (106) is free of conductor structure (108) and the at least one conductor structure (108) a

exposed surface (118), and

a dielectric layer (110, 604) on the

exposed surface (112) of the at least one conductor pattern (108), the surface (11, 116) of the electrically conductive layer (106) being substantially free of the dielectric layer (110, 604), and wherein the dielectric layer (110, 604) is formed from a Lewis adduct.