WO2014054567A1

WO2014054567A1 - Semiconductor device manufacturing method

Info

Publication number: WO2014054567A1
Application number: PCT/JP2013/076505
Authority: WO
Inventors: 寛生西; 弘充大嶋
Original assignee: ピーエスフォールクスコエスエイアールエル
Priority date: 2012-10-04
Filing date: 2013-09-30
Publication date: 2014-04-10
Also published as: JP2015165521A

Abstract

Provided is a semiconductor device manufacturing method that is provided with: a step for forming, on a silicon substrate (1), a plurality of element isolation grooves (23) and active regions (1a), said element isolation grooves and active regions extending in the first direction and being repeatedly disposed in the second direction; a step for forming inner wall oxide films (24) on the side surfaces of the active regions (1a), respectively; a step for forming element isolation regions (2) by forming element isolating insulation films (25) with which the element isolation grooves (23) are filled; a step for forming a plurality of mask film patterns extending in the second direction, and exposing the active regions (1a) and the element isolation regions (2) from openings in the mask film patterns; a step for etching back the element isolating insulation films (25) exposed from the element isolation regions (2), and removing the inner wall oxide films (24) by side-etching both the side surfaces of respective active regions (1a); and a step for forming a saddle-shaped fin section (11) by etching back the silicon substrate (1) exposed from the active regions (1a). In the method, the inner wall oxide films (24) are reliably removed, the thickness of the element isolating insulation films (25) is ensured by eliminating excessive etching, and generation of a leak current can be eliminated.

Description

Manufacturing method of semiconductor device

The present invention relates to a method for manufacturing a semiconductor device.

Generally, a large-scale integrated circuit (LSI) that integrates a large number of MOS transistors, resistors, and the like on a single chip is adopted as a main part of a computer or an electric device. Especially in the field of semiconductor devices such as DRAM (Dynamic Random Access Memory) or PRAM (Parameter Random Access Memory) among LSIs, further rapid miniaturization and higher integration are achieved by increasing the functionality of the equipment used. Is underway.

Further, as an element isolation structure in the semiconductor device as described above, a method / structure called STI (Shallow Trench Isolation) is known. This STI means that, for example, a shallow trench called a shallow trench is formed on a silicon substrate, and this is filled with an element isolation insulating film made of an insulating material such as an oxide film, whereby an active region provided on the silicon substrate is formed. This is a structure in which element isolation regions to be partitioned are provided. Such STI has an advantage that it can be miniaturized without expanding in the horizontal direction, compared to LOCOS (Local Oxidation of Silicon), which is simple in process.

In the transistor structure using the line-and-space type field pattern by STI described above, it is necessary to provide a dummy word line for isolating elements in addition to the word line constituting the gate electrode. Thus, when a saddle type fin structure is used for forming a channel portion of a transistor in providing a substrate buried type word line for an STI structure on a silicon substrate, a groove along the word line is formed on the STI. (For example, refer to Patent Documents 1 and 2).

Here, when the word line and the dummy word line are formed in the STI structure, an etch rate difference is generated between the inner wall oxide film and the buried film, and the cross section of the groove opening on the silicon substrate is rectangular. The STI inner wall oxide film located on the side surface becomes difficult to be etched, and the problem that the inner wall oxide film tends to remain on the side surface of the fin arises. This becomes more conspicuous as the inner wall oxide film is thicker. As described above, the channel region is located above the top of the inner wall oxide film remaining on the side wall of the fin because the effect as the channel region is less likely to be exhibited in the portion where the inner wall oxide film remains on the side wall of the fin. Depends on the height of the silicon substrate formed. For this reason, in order to secure the channel region by setting the fin height to a predetermined value or more, it is necessary to dig deeply into the STI structure on the silicon substrate to form the word groove. However, in this case, since the film thickness of the remaining STI film, that is, the buried film for isolating the adjacent active region is thinned, current is passed through the surface of the underlying silicon substrate by the parasitic MOS effect. There is a problem that it is easy to leak. Further, in the dummy word line, when the inner wall oxide film remaining on the side wall of the fin is thin, the portion also becomes a channel region, and there is a problem that current is likely to leak through the fin.

JP 2008-016842 A JP 2008-018771 A

Hereinafter, referring to FIGS. 9A to 9C and FIGS. 10A to 10D, a method for forming a buried substrate type word line using a fin structure for forming a channel region of a transistor, which the present inventors have experimented Will be explained. 9A and 10A are plan views showing a conventional semiconductor device. FIGS. 9B and 10B are cross-sectional views taken along the line AA in FIGS. 9A and 10A, respectively. FIGS. 9C, 10C, and 10D are FIGS. FIG. 10B is a sectional view taken along line BB shown in FIGS. 9A and 10A, respectively.

As shown in FIGS. 9A to 10C, first, an embedded word is formed on a silicon substrate 101 in which an element isolation region 102e having an STI line and space pattern is formed by embedding an element isolation insulating film 102e in a surface layer. Line grooving. As shown in FIG. 9A, the STI line and space pattern extends in the X ′ direction, and the trench of the buried word line extends in the Y direction intersecting the X ′ direction. At this time, first, a silicon nitride film 103a is formed on the STI, and then a resist mask R having a line and space pattern along the word line planned line is formed thereon using a lithography technique. Next, dry etching is performed using the resist mask R as a mask, and the silicon nitride film 103a is etched into the pattern of the word groove 103b. As a result, the upper surface of the element isolation region 102 and the upper surface of the active region 101a made of the silicon substrate 101 are alternately exposed in the Y direction in the word groove 103b. Then, using the silicon nitride film 103a as a mask, the element isolation region 102 and the active region 101a whose upper surfaces are exposed are etched to form a word groove 103b having a predetermined depth in the silicon substrate 101. At this time, as shown in FIG. 9B, first, the element isolation insulating film 102e in the element isolation region 102 is selectively etched, and Si (silicon substrate) in the active region 101a is hardly etched as much as possible. Etching is performed so as not to cut. As a result, the etching shape of the word groove 103b becomes almost rectangular as shown in the illustrated example. At this time, at the position of the BB cross section shown in FIG. 9C, the inner wall oxide film 102d in the element isolation region 2 tends to be left on the side wall of the Si substrate 112a. Then, as shown in FIG. 10A to FIG. 10C, under the condition that Si in the active region 101a is selectively etched, the word groove 103b is further etched to a predetermined depth, and as shown in FIG. A saddle type fin portion 112 is formed so that the upper surface of the silicon substrate 101a protrudes to a position higher than the upper surface of the element isolation insulating film 102e.

In the step of forming the word groove 103b, etching is performed under the condition that the etching rate of the element isolation insulating film 102e is higher than the etching rate of the silicon substrate 1. At this time, an etch rate difference occurs between the inner wall oxide film 102d of the STI and the element isolation insulating film 102e, and since Si is rectangular, the inner wall oxide film 102d is difficult to be etched. For this reason, as shown in FIG. 10C, the inner wall oxide film 102d on the side surface of Si cannot be completely removed during etching, and the remaining portion 102f of the inner wall oxide film is generated on the side surface of the saddle type fin portion 112. The amount of the remaining portion 102f of the inner wall oxide film remaining is proportional to the film thickness of the inner wall oxide film 102d, and the remaining amount increases as the film thickness increases.

As described above, when the remaining portion 102f of the inner wall oxide film is formed on the side surface of Si, the effect as a channel region in this portion is hardly exhibited, and there is a problem that the channel does not function as a transistor. Therefore, as shown in FIG. 10D, for the purpose of securing the channel region, it is necessary to dig deeper into the word groove 103b in the element isolation region 102 to increase the height of the fin. However, in such a case, the remaining film of the element isolation insulating film 102e remaining at the bottom of the element isolation region 102 becomes thin, and a leakage current is generated on the surface of the silicon substrate 101 located therebelow due to the parasitic MOS effect. There was a problem that it was easy to do. Further, when the inner wall oxide film 102d remaining in the vicinity of the dummy word line is thin, the portion serves as a channel region, so that there is a problem that the possibility of occurrence of a leakage current is increased.

In order to solve the above problems, the present inventors have conducted intensive research, and in the process of manufacturing a semiconductor device having a three-dimensional structure, a saddle type fin portion and a buried word line are formed on a silicon substrate on which an STI structure is formed. The knowledge that the inner wall oxide film formed on the side surface of the active region can be surely removed by side-etching the side surface of the active region exposed during the formation of the word groove portion when forming the word groove for forming. did. As a result, the height of each fin portion can be ensured and the thickness of the element isolation insulating film remaining at the bottom of the element isolation groove can be secured without digging a large STI structure (element isolation insulating film). The present inventors have found that leakage current can be prevented from occurring on the surface of the silicon substrate immediately below the bottom surface of the substrate.

That is, the method for manufacturing a semiconductor device according to the present invention includes a plurality of element isolation grooves extending in a first direction on a surface layer of a silicon substrate and repeatedly arranged in a second direction intersecting the first direction, and the element Forming an active region partitioned by the isolation trench; forming an inner wall oxide film on a side surface of the active region; and forming an element isolation region by forming an element isolation insulating film filling the element isolation trench A plurality of mask film patterns extending in the second direction across the active region and the element isolation region, and an upper surface of the active region and the element isolation are formed in an opening of the mask film pattern Exposing the upper surface of the region, etching back the element isolation insulating film whose upper surface is exposed in the element isolation region in the vertical direction, and side-etching both side surfaces of the active region to thereby form the active region of A saddle type projecting upward from the upper surface of the element isolation insulating film by removing the inner wall oxide film formed on the side surface and etching back the silicon substrate with the upper surface exposed in the active region And a step of forming fin portions sequentially.

According to the manufacturing method of the semiconductor device having such a configuration, the inner wall oxide film on the side surface of the saddle type fin portion can be surely removed, so that the height of each fin portion can be ensured without digging a large STI structure. Further, by avoiding excessive digging of the element isolation insulating film, it is possible to secure the thickness of the element isolation insulating film remaining at the bottom of the element isolation groove, so that the surface of the silicon substrate located immediately below the bottom surface of the element isolation groove is formed. Generation of flowing leakage current can be prevented.

BRIEF DESCRIPTION OF THE DRAWINGS It is a cross-sectional schematic diagram which shows the manufacturing method and semiconductor device of the semiconductor device which are embodiment of this invention, and is the top view which looked at the semiconductor device obtained by the manufacturing method which concerns on this invention from the upper surface side. FIG. 2 is a schematic cross-sectional view showing the semiconductor device manufacturing method and the semiconductor device according to the embodiment of the present invention, and is a cross-sectional view along AA ′ shown in FIG. It is process drawing which shows the manufacturing method of the semiconductor device which is embodiment of this invention, and is the top view which looked at the wafer from the upper surface. FIG. 3B is a process diagram illustrating the manufacturing method of the semiconductor device according to the embodiment of the present invention, and is a cross-sectional view along AA ′ in FIG. 3A. FIG. 3B is a process diagram illustrating the manufacturing method of the semiconductor device according to the embodiment of the present invention, and is a BB ′ cross-sectional view illustrated in FIG. 3A. It is process drawing which shows the manufacturing method of the semiconductor device which is embodiment of this invention, and is the top view which looked at the wafer from the upper surface. FIG. 4B is a process diagram illustrating the manufacturing method of the semiconductor device according to the embodiment of the present invention, and is a sectional view taken along the line AA ′ in FIG. 4A. FIG. 4B is a process diagram illustrating the manufacturing method of the semiconductor device according to the embodiment of the invention, and is a BB ′ sectional view shown in FIG. 4A. It is process drawing which shows the manufacturing method of the semiconductor device which is embodiment of this invention, and is the top view which looked at the wafer from the upper surface. FIG. 5B is a process diagram illustrating the manufacturing method of the semiconductor device according to the embodiment of the present invention, and is a cross-sectional view along AA ′ in FIG. 5A. FIG. 6B is a process diagram illustrating the manufacturing method of the semiconductor device according to the embodiment of the invention, and is a BB ′ sectional view shown in FIG. 5A; It is process drawing which shows the manufacturing method of the semiconductor device which is embodiment of this invention, and is the top view which looked at the wafer from the upper surface. FIG. 6B is a process diagram illustrating the manufacturing method of the semiconductor device according to the embodiment of the present invention, and is a cross-sectional view along AA ′ in FIG. 6A. FIG. 6B is a process diagram illustrating the manufacturing method of the semiconductor device according to the embodiment of the invention, and is a BB ′ sectional view shown in FIG. 6A. It is process drawing which shows the manufacturing method of the semiconductor device which is embodiment of this invention, and is the top view which looked at the wafer from the upper surface. FIG. 7B is a process diagram illustrating the manufacturing method of the semiconductor device according to the embodiment of the present invention, and is a sectional view taken along the line AA ′ in FIG. 7A. It is process drawing which shows the manufacturing method of the semiconductor device which is embodiment of this invention, and is the top view which looked at the wafer from the upper surface. FIG. 8B is a process diagram illustrating the manufacturing method of the semiconductor device according to the embodiment of the present invention, and is a cross-sectional view along AA ′ in FIG. 8A. It is process drawing which shows the manufacturing method of the conventional semiconductor device. It is process drawing which shows the manufacturing method of the conventional semiconductor device. It is process drawing which shows the manufacturing method of the conventional semiconductor device. It is process drawing which shows the manufacturing method of the conventional semiconductor device. It is process drawing which shows the manufacturing method of the conventional semiconductor device. It is process drawing which shows the manufacturing method of the conventional semiconductor device. It is process drawing which shows the manufacturing method of the conventional semiconductor device.

Hereinafter, a method for manufacturing a semiconductor device according to an embodiment of the present invention will be described with reference to the drawings as appropriate. The drawings referred to in the following description are drawings for explaining the method of manufacturing the semiconductor device of the present embodiment, and the size, thickness, dimension, etc. of each part shown in the figure are the dimensional relationship of the actual semiconductor device. Is different.

FIG. 1 is a plan view schematically showing a semiconductor device A according to an embodiment to which the present invention is applied. The X direction shown in the drawing is a bit line extending direction (third direction), and X is inclined in the X direction. The 'direction is the active region and element isolation region extending direction (first direction), the Y direction is the word line extending direction (second direction), and the Z direction is the semiconductor lamination direction. 2 is a cross-sectional view taken along line AA in the plan view of FIG. 3 to 8 are process diagrams schematically showing main processes of the semiconductor device manufacturing method of the present embodiment.

"Configuration of semiconductor devices"
First, the configuration of the semiconductor device of this embodiment will be described below by taking a DRAM (Dynamic Random Access Memory) memory cell as an example.
As shown in FIGS. 1 and 2, in the semiconductor device A of the present embodiment, an inner wall oxide film 24 is formed on the inner surface of the element isolation groove 23 and an element isolation insulating film 25 is formed in the element isolation groove 23. Thus, a shallow trench isolation (STI) structure including an element isolation region 2 that partitions the active region 1a extending in the X ′ direction (first direction) in the Y direction (second direction) is included. A silicon substrate 1 is provided. The active region 1a has a plurality of silicon pillars 12 and a height lower than that of the silicon pillars 12, and the width in the Y direction is narrower than the width in the Y direction of the active region 1a pattern. Thus, a plurality of saddle type fin portions 11 from which the inner wall oxide film 24 has been removed are provided. That is, in the semiconductor device A, the silicon pillar portions 12 and the saddle-type fin portions 11 are connected by being repeatedly arranged in the X ′ direction in the active region 1a. The semiconductor device A is provided between each of the plurality of pillar-type fin portions 12 and is provided on the upper surface of the first embedded word line 31 constituting the dummy electrode and the plurality of saddle-type fin portions 11, and the gate electrode Are provided on the first interlayer insulating film 4 formed so as to cover at least the STI structure on the silicon substrate 1, and the active region 1 a and the bit contact plug (bit contact layer) 54. And a bit line 55 connected to each other through the bit line gate 5. The semiconductor device A is provided on the second interlayer insulating film 6 formed so as to cover the bit line gate (bit line) 5 and the first interlayer insulating film 4, and the active region 1a and the capacitive contact layer 7 are interposed therebetween. The capacitor 8 is generally connected. The semiconductor device A according to the present embodiment is configured such that a transistor having a buried gate type structure is formed on the STI structure included in the silicon substrate 1 by the above configuration.

In the example shown in FIG. 1, in the memory cell region, an element isolation region 2 having a slope in the X direction (bit line direction) and extending in a straight line in the X ′ direction, and an X adjacent to the element isolation region 2 The active regions 1a extending linearly in the 'direction are repeatedly arranged in the Y direction (word line direction) at equal pitch intervals. The active region 1a is electrically isolated in the Y direction by the element isolation region 2. Here, the upper surface width in the Y direction of the element isolation region 2 and the active region 1a may be the same, or the upper surface width of the element isolation region 2 may be smaller than the upper surface width of the active region 1a. good.

A second embedded word line 32 that extends in a straight line in the Y direction across the plurality of element isolation regions 2 and the plurality of active regions 1a and forms a gate electrode (hereinafter sometimes simply referred to as a word line). Further, a first buried word line (hereinafter also referred to as a dummy word line) 31 forming a dummy electrode is disposed. In FIG. 1, a part of the configuration is omitted, but two word lines 32 are arranged at equal intervals between two adjacent dummy word lines 31. That is, the dummy word lines 31 and the word lines 32 are arranged with the same width and interval.

The semiconductor device A according to the present embodiment has a configuration in which a saddle-type fin portion 11 is formed on the surface of the silicon substrate 1 located immediately below each word line, and a silicon pillar portion 12 is disposed between each word line. Has been.

The dummy word line 31 is made of the same material as the word line 32, but each word line 32 functions as a gate electrode of a corresponding transistor, whereas the dummy word line 31 has both sides of the dummy word line 31. Has an element isolation function for electrically isolating adjacent transistors. As a result, the active region 1a is insulated and isolated by the element isolation region 2 in the Y direction (word line direction) and by the dummy word line 31 in the extending X ′ direction (substantially bit line direction). It constitutes an independent island-like active region. Here, in this embodiment, for ease of explanation, the adjacent dummy word lines 31 are directed in the X direction (bit line direction) 31A, 31B, 31C, and the word line 32 is directed in the X direction 32A. They are called 32B and 32C.

One island-like active region extending in the X ′ direction is sandwiched between the dummy word line 31A and the dummy word line 31B. Furthermore, the capacitor contact connection region 1d adjacent to the dummy word line 31A and the word line 32A, the bit contact connection region 1e adjacent to the word line 32A and the word line 32B, and the other adjacent to the word line 32B and the dummy word line 31B. And a capacitor contact connection region 1d. Thus, one capacitor contact region 1d adjacent to the dummy word line 31A, one word line 32A, and the bit contact connection region 1e constitute one transistor Tr1. The bit contact connection region 1e, the other word line 32B, and the other capacitor contact connection region 1d adjacent to the dummy word line 31B constitute another transistor Tr1. Accordingly, the bit contact connection region 1e is configured to be shared by the two transistors Tr1. The capacitor contact connection region 1d and the bit contact connection region 1e are configured by the silicon pillar portion 12.

Further, a bit contact plug 53 is provided on each bit contact connection region 1e, and a bit line 55 extending in the X direction by connecting to each bit contact plug (bit contact layer) 54 is disposed. A bit line gate 5 is configured. Further, a capacitor contact 7 is provided on each capacitor contact connection region 1d, and a capacitor (not shown in FIG. 1) is provided on each capacitor contact 7.

Next, as shown in the cross-sectional view of FIG. 2, word lines that also serve as gate electrodes are formed on the surface of the silicon substrate 1 through a gate insulating film in a plurality of word grooves 3 formed with the same width and interval. Each is buried. More specifically, a word line 3d made of metal is inserted into each of the first word groove 3A and the second word groove 3B formed with the same width and interval through a gate insulating film 3c made of a silicon oxide film. Each is buried. A cap insulating film 3e is buried so as to cover the upper surface of the word line 3d. A dummy word line 31 is disposed in the first word groove 3A, and a word line 32 is disposed in the second word groove 3B.

As the material of the dummy word line 31 and the word line 32, for example, a refractory metal film such as a titanium nitride film, a titanium film, a tungsten nitride film, or a tungsten film can be used. The laminated film can be selected as appropriate.

In the example shown in FIG. 2, a first interlayer insulating film 4 is provided so as to cover the cap insulating film 3e. A bit contact plug (bit contact layer) 54 penetrating the first interlayer insulating film 4 is disposed on the upper surface of the bit contact connection region 1e formed of the active region 1a located between two

adjacent word lines

32A and 32B. . Further, bit lines 55 connected to the upper surface and extending in the X direction are arranged in a stacked manner to constitute a wiring. A side wall insulating film 56 made of a silicon nitride film is provided on the upper surface and side wall of the bit line 55, and the bit contact plug 54, the bit line 55, and the side wall insulating film 56 constitute the bit line gate 5 in the memory cell region. ing.

As a material of each member constituting the bit line 55, for example, a refractory metal film such as a titanium nitride film, a titanium film, a tungsten nitride film, a tungsten silicide film, or a tungsten film can be used. A layer or a laminated film can be appropriately selected.

Further, in the semiconductor device A, a second interlayer insulating film 6 made of a silicon oxide film is provided on the entire surface of the silicon substrate 1 so as to cover the bit line gate 5. Further, a capacitor contact plug (capacitor contact layer) 7 is connected to the upper surface of the active region 1 a serving as the capacitor contact connection region 1 d through the second interlayer insulating film 6 and the first interlayer insulating film 4. A stopper film 9 made of a silicon nitride film and a third interlayer insulating film 13 made of a silicon oxide film are provided on the entire surface including the upper surface of the capacitor contact plug 7.

Further, a cylinder hole 8a penetrating the third interlayer insulating film 13 and the stopper film 9 is opened so as to reach the upper surface of the capacitor contact plug 7, and the lower electrode 8b is covered so as to cover the inner wall and the bottom of the cylinder hole 8a. Is provided. As a result, the lower electrode 8 b is connected to the upper surface of the capacitor contact plug 7. A capacitor insulating film 8c and an upper electrode 8d are provided so as to cover the lower electrode surface 8b, and the capacitor 8 is configured by the lower electrode 8b, the capacitor insulating film 8c, and the upper electrode 8d.

In addition, the semiconductor device A is provided with a fourth interlayer insulating film 14 so as to cover the capacitor 8, and further, a wiring contact 15 is provided through the fourth interlayer insulating film 14. The wiring layer 16 is connected.
A protective insulating film 17 is provided on the entire surface so as to cover the wiring layer 16 and the fourth interlayer insulating film 14.

As described above, in the semiconductor device A of this embodiment, the inner wall oxide film 24 is formed in the element isolation groove 23 and the element isolation insulating film 25 is formed in the element isolation groove 23, so that the element isolation region 2 is formed. On the provided silicon substrate 1 having an STI structure, a plurality of pillar-type fin portions 12 and a height lower than that of the pillar-type fin portions 12 and a narrow width in the Y direction are formed to oxidize the inner wall. The structure includes a plurality of saddle-type fin portions 11 from which the film 24 has been removed. According to the semiconductor device A, with the above configuration, generation of a leakage current flowing on the surface of the silicon substrate 1 located immediately below the bottom surface of the element isolation groove 23 is prevented, and excellent element characteristics can be obtained.

"Manufacturing method of semiconductor device"
Next, a method for manufacturing the semiconductor device A of this embodiment will be described below with reference to FIGS. 3 to 8 (see also FIGS. 1 and 2 as necessary). 3 to 6 are shown in FIG. 3A, FIG. 4B, FIG. 6B, and FIG. 3A, FIG. 4A, FIG. FIG. 5A shows a cross-sectional view along AA ′ in FIG. 6A). Here, the AA ′ cross-sectional views in FIGS. 3 to 6 are different in direction from the AA ′ cross-sectional view in FIG. 2, so care should be taken.
The silicon substrate 1 used in this embodiment is a p-type single crystal substrate.

The manufacturing method of the semiconductor device A of the present embodiment is repeatedly arranged in the Y direction (second direction) extending in the X ′ direction (first direction) on the surface layer of the silicon substrate 1 and intersecting the X ′ direction. A plurality of element isolation trenches 23, a step of forming an active region 1a partitioned by the element isolation trenches 23, a step of forming an inner wall oxide film 24 on the side surface of the active region 1a, and embedding the element isolation trenches 23. A step of forming the element isolation insulating film 25 to form the element isolation region 2, and a plurality of mask film patterns extending in the Y direction (second direction) across the active region 1a and the element isolation region 2 Forming and exposing the upper surface of the active region 1a and the upper surface of the element isolation region 2 in the opening of the mask film pattern, and the element isolation insulating film 25 having the upper surface exposed in the element isolation region 2 in the vertical direction Etch back and active area a step of removing the inner wall oxide film 24 formed on both side surfaces of the active region 1a by side-etching both side surfaces of a, and etching back the silicon substrate 1 whose upper surface is exposed in the active region 1a. And a step of forming the saddle-type fin portion 11 protruding upward from the upper surface of the element isolation insulating film 25.

In addition, more specifically, the manufacturing method of the present embodiment can be a method that sequentially includes the following steps (1) to (5).
(1) A mask insulating film and a first resist mask (not shown) are sequentially formed on the silicon substrate 1, and the silicon substrate 1 and the mask insulating film are etched using the first resist mask, so that the X ′ direction (first After element isolation trenches 23 are formed in a line-and-space pattern along a region to be formed of element isolation regions 2 extending in one direction), an inner wall oxide film 24 is formed on the inner surface of the element isolation trenches 23. An isolation region 2 for partitioning the active region 1a is formed by filling the isolation trench 23 with an insulating material to form an isolation isolation film 25, and an STI for forming a shallow trench isolation (STI) structure. Process.
(2) After the mask nitride film 3a and the second resist mask R are sequentially formed on the silicon substrate 1, the element isolation region 2 and the active region 1a on the silicon substrate 1 are removed by etching using the second resist mask R. Thus, an element isolation insulating film whose upper surface is exposed in the element isolation region 2 when simultaneously forming a plurality of word grooves 3 that intersect the X ′ direction (first direction) and extend in the Y direction (second direction). 25, the inner wall oxide film 24 formed on the side wall of the active region 1a is removed by side-etching both side surfaces of the active region 1a to reduce the width in the Y direction (second direction). A fin part forming step of forming the saddle type fin part 11 by projecting the silicon substrate 1 above the upper surface of the deeply-isolated element isolation insulating film 25.
(3) Further, a digging step for controlling the height of the saddle type fin portion 11 by selectively etching and digging up the upper surface of the saddle type fin portion 11 exposed in the word groove 3.
(4) After depositing a conductive material on the bottom surfaces of the plurality of word grooves 3, a part of the conductive material is removed by etching, and the conductive material is left on the bottom surfaces of the plurality of word grooves 3. A buried word line forming step for forming the buried word line 31 and the second buried word line 32;
(5) Cap formation for forming a buried cap insulating film 3e by filling the first word groove 3A and the second word groove 3B with an insulating material and embedding the first buried word line 31 and the second buried word line 32. Process.

Furthermore, the manufacturing method of the present embodiment is a method including a step of forming a bit line, a step of forming a capacitor, a step of forming a wiring layer, etc. in addition to the steps (1) to (5). be able to.

In the present embodiment, in particular, in the above-described fin portion forming step, a method is employed in which the element isolation insulating film 25 is dug down vertically and the inner wall oxide film 24 is removed by side etching the side surface of the active region 1a. Thus, the saddle type fin portion 11 can be formed without leaving the inner wall oxide film 24.

Hereinafter, the steps (1) to (5) provided in the manufacturing method of the present embodiment and the steps performed subsequently will be specifically described.

<(1) STI process>
The STI process of this embodiment will be described with reference to FIGS. 3A to 3C.
In the STI process, first, a pad silicon oxide film having a thickness of 2 nm and a silicon nitride film having a thickness of 50 nm are stacked on the silicon substrate 1.
Next, a plurality of photoresist patterns extending in the X ′ direction (first direction) are formed on the silicon nitride film by using a lithography technique. This photoresist pattern is formed, for example, as a line pattern having a width in the Y direction of 40 nm and an interval of 40 nm.
Next, using the photoresist pattern as a mask, the underlying silicon nitride film and pad silicon oxide film are anisotropically dry etched to transfer the pattern. Thereby, the upper surface of the silicon substrate 1 is exposed.

Next, the photoresist pattern is removed, and using the silicon nitride film as a mask, the portion of the silicon substrate 1 where the upper surface is exposed is subjected to anisotropic dry etching to form an element isolation groove 23. The depth of the element isolation groove 23 from the upper surface of the silicon substrate 1 is, for example, 250 nm. In this case, for example, a mixed gas plasma of hydrogen bromide (HBr), chlorine (Cl ₂ ), and oxygen (O ₂ ) is used for the anisotropic dry etching.
3C, the active region 1a is partitioned in the Y direction (second direction) by the formation of the element isolation groove 23, and the side surface of the element isolation groove 23, that is, the first side surface constituting the active region 1a. 1b and the second side surface 1c are formed. The first side surface 1b and the second side surface 1c are formed to face the second direction and extend in the first direction with the active region 1a interposed therebetween.
The first side surface 1b and the second side surface 1c are formed so as to be slightly inclined toward the active region 1a made of the silicon substrate 1 so as not to deteriorate the characteristics of the transistor formed in the active region 1a in a later step. Is done. That is, the upper width of the opposing first side surface 1b and second side surface 1c is formed narrower than the lower width. The inclination angle is in a range of 85 ° or more and less than 90 °.

Next, the inner surface of the element isolation groove 23 including the first side surface 1b and the second side surface 1c is left thermally oxidized by a conventionally known method with the silicon nitride film used as a mask remaining, for example, a thickness of 2 nm. An inner wall oxide film 24 made of a silicon oxide film is formed. Then, a buried insulating material film made of a silicon nitride film is formed by CVD on the entire surface of the silicon substrate 1 so as to fill the element isolation trench 23. The buried insulating material is not limited to a silicon nitride film, and a silicon oxide film formed by a CVD method or a spin coating method can be used. Further, it may be formed of a laminated film of a silicon nitride film and the silicon oxide film.

Next, the silicon nitride film used as the buried insulating material and the silicon nitride film used as the mask are simultaneously etched back and removed. At this time, even when a silicon oxide film is used as the buried insulating material, it can be removed by the same method. As a result, the element isolation trench 23 is filled with the element isolation insulating film 25 having an upper surface that is flush with the upper surface of the silicon substrate 1. By filling such an element isolation insulating film 25, a plurality of element isolation regions 2 extending in the first direction are formed. In addition, a plurality of active regions 1 a that are partitioned in the Y direction by the element isolation region 2 and that have the first side surface 1 b and the second side surface 1 c facing in the Y direction and extend in the first direction are formed. Thereby, the width (upper surface width) W1 in the Y direction on the upper surface of the active region 1a is, for example, about 40 nm. The element isolation region 2 has an STI structure, and the upper surface width in the Y direction is 40 nm, which is equal to the upper surface width of the active region 1a. Here, the width and interval in the Y direction of the photoresist pattern are both set to 40 nm, but the present invention is not limited to this, and the interval may be made smaller than 40 nm. That is, the upper surface width in the Y direction of the element isolation region 2 may be formed to be smaller than the upper surface width in the Y direction of the active region 1a. This has the advantage that the planar area of the memory cell can be reduced.

As described above, the element isolation region 2 in the present embodiment is formed of a silicon oxide film formed on the boundary with the active region 1a formed of the silicon substrate 1, that is, the first side surface 1b and the second side surface 1c by the thermal oxidation method. The structure includes an inner wall oxide film 24 and an element isolation insulating film 25 that covers the inner wall oxide film 24.

<(2) Fin part formation process>
Next, the fin part forming step will be described with reference to FIGS. 4A to 4C.
In the fin portion forming step, first, a mask film 3a is formed on the silicon substrate 1, and then a second photoresist mask R is formed thereon using a lithography technique. The mask film 3a can be made of a material such as an amorphous carbon film and a silicon oxide film. The second photoresist mask R extends in a second direction (Y direction) intersecting the first direction (X ′ direction) and has a plurality of line patterns extending over the plurality of active regions 1 a and the plurality of element isolation regions 2. It is formed. The width and interval of the second photoresist mask R in the X direction (third direction) perpendicular to the Y direction are each 40 nm, for example.

Next, the lower mask film 3a is etched by an anisotropic dry etching method using the second photoresist mask R as a mask to transfer the mask pattern. Thus, between the plurality of mask films 3a extending in the second direction (Y direction) (opening 3b), the upper surface of the active region 1a and the upper surface of the element isolation region 2 (repeatedly arranged in the Y direction) The upper surface of the inner wall oxide film 24 and the upper surface of the element isolation insulating film 25 are exposed.
Thereafter, the second photoresist mask R is removed.

Next, using the mask film 3a as a mask, the active region 1a and the element isolation region 2 whose upper surfaces are exposed are subjected to anisotropic dry etching to simultaneously form the first word groove 3A and the second word groove 3B. Here, a method is used in which the element isolation region 2 is first subjected to anisotropic dry etching, and then the active region 1a is subjected to anisotropic dry etching. On the other hand, a method of etching the element isolation region 2 after etching the active region 1a is not preferable. The reason is that, as described above, the first side surface 1b and the second side surface 1c constituting the active region 1a are formed so as to be slightly inclined toward the active region 1a side. When anisotropic dry etching is performed, the element isolation insulating film 25 formed along the Z direction of the first side face 1b and the second side face 1c serves as an etching mask, and as a result, the first extension extending in the first direction. This is because the etching residue of the silicon substrate 1 occurs along the side surface 1b and the second side surface 1c. In order to avoid this, in this embodiment, it is necessary to anisotropically dry the element isolation region 2 first.

First, as shown in FIGS. 5A to 5C, using the mask film 3a as a mask, the element isolation region 2 whose upper surface is exposed is selectively subjected to anisotropic dry etching. As described above, the upper surface of the element isolation region 2 includes the upper surface of the inner wall oxide film 24 formed on the first side surface 1b and the second side surface 1c and the element isolation insulating film 25 embedded in the element isolation trench 23. And an upper surface. The inner wall oxide film 24 is made of a silicon oxide film formed by a thermal oxidation method, and the element isolation insulating film 25 is made of a silicon nitride film formed by a CVD method. Generally, in this state, when anisotropic dry etching is performed under the condition that the etching rate (ER) of the silicon nitride film constituting the element isolation insulating film 25 is faster than the ER of the active region 1a (silicon substrate 1), the first side surface The inner wall oxide film 24 formed on 1b and the second side surface 1c is not sufficiently etched and tends to remain. Such remaining of the inner wall oxide film 24 causes various inconveniences as described above (see the section of the problem to be solved by the invention). The same problem occurs when the element isolation insulating film is formed of a silicon oxide film formed by CVD or spin coating.

Therefore, in the present embodiment, the silicon nitride film (element isolation insulating film 25) is etched by anisotropic dry etching, and at the same time, the first side surface 1b and the second side surface 1c are side etched to perform the Y-direction of the active region 1a. Reduce the width. Here, the degenerate width W2 on one side surface is, for example, 5 nm. In this case, the entire active region 1a is degenerated by 10 nm. For this degeneration, an etching condition is used in which isotropic etching for simultaneously etching the inner wall oxide film 24 exposed on the first side surface 1b and the second side surface 1c in the lateral direction can be performed. Alternatively, after the element isolation insulating film 25 is anisotropically etched and dug down to a predetermined position, the inner wall oxide film 24 exposed on the first side face 1b and the second side face 1c is replaced with an isotropic silicon oxide film. A method of performing dry etching step by step using etching conditions may be used. As a result, as shown in FIG. 5C, a first saddle fin portion (saddle fin portion) 11a is formed in which the upper surface of the active region 1a is higher than the upper surface of the element isolation region 2 adjacent in the Y direction. . Here, the position of the upper surface of the element isolation region 2 after being dug down is, for example, a position 150 nm below the upper surface of the silicon substrate 1.

By etching the element isolation region 2 under the etching conditions as described above, the width W3 in the Y direction on the upper end side of the plurality of first saddle type fin portions 11a becomes 30 nm, and the upper surface width in the Y direction of the active region 1a It is 10 nm narrower than W1 (40 nm). Thereby, the inner wall oxide film 24 formed on the side surfaces 1b and 1c of the active region 1a can be reliably removed at a position corresponding to the side surface of the first saddle type fin portion 11a. Further, by etching the inner wall oxide film 24 in the lateral direction and side-etching the side surfaces 1b and 1c of the active region 1a, the side surface of the first saddle type fin portion 11a is newly formed. That is, the first side surface 1b of the active region 1a becomes a new first side surface 1bb in the first saddle type fin portion 11a, and the second side surface 1c similarly becomes a new second side surface 1cc. The new first side surface 1bb is connected to the original first side surface 1b via a step D1 having a degenerated width W2, and the new second side surface 1cc is connected to the original second side via a step D2 having a degenerate width W2. It is formed so as to be connected to the side surface 1c.

Below, a more specific example is demonstrated about the fin part formation process (2) of this embodiment, referring FIG.4 and FIG.5.
First, a mask film 3a made of an amorphous carbon film and a silicon oxide film is formed on the entire surface of the silicon substrate 1 including the STI structure, for example, by a CVD method. Next, a BARC film is applied on the mask film 3a, and a photoresist is laminated and applied. Thereafter, a second photoresist mask R having a repetitive pattern of the word grooves 3 (first word groove 3A, second word groove 3B) is formed by lithography and BARC etching. Then, as shown in FIGS. 4A to 4C, a mask film 3a is formed in a repeated pattern of the word grooves 3 by etching using the second resist mask R.
Thereafter, the photoresist and the BARC film are removed.

Next, as shown in FIGS. 5A to 5C, the element isolation region 2 whose upper surface is exposed is selectively anisotropically dry etched using the mask film 3a as a mask. At this time, first, the element isolation insulating film 25 in the element isolation region 2 is selectively etched, Si in the active region 1a is hardly etched from above, and the inner wall oxide film 24 is etched in the lateral direction and silicon. A chamber of 10 to 20 Pa in a condition in which the substrate 1 is side-etched, for example, in a mixed gas plasma atmosphere of trifluoromethane (CHF ₃ ), octafluorocyclobutane (C ₄ F ₈ ), oxygen (O ₂ ), and Ar. Etching is performed under the condition of applying pressure and 700 to 1200 W of RF power. Here, the side etch amount increases when the chamber pressure becomes high, and the side etch amount decreases when the chamber pressure becomes low. However, by setting the chamber pressure within the above range, an appropriate side etch amount can be obtained and the inner wall oxidation can be achieved. The saddle type fin portion 11 can be formed while the film 24 is reliably removed. Further, as described above, the change in the thickness of the inner wall oxide film 24 in the element isolation region 2 is not dependent on the thickness of the inner wall oxide film 24 by performing adjustment by changing the flow rate of O ₂ . It is possible to form the saddle type fin portion 11 while reliably removing the inner wall oxide film 24.
Thus, by adjusting each etching condition, as shown in FIG. 5C, the side etching is made appropriate and etching is performed so that the inner wall oxide film 24 in the element isolation region 2 does not remain in the saddle type fin portion 11.

In the present embodiment, the saddle type is formed while removing the inner wall oxide film 24 by changing the chamber pressure at the time of silicon etching in the next digging step to a high pressure side so that side etching can be performed. It is also possible to make the fin portion 11 thin.

<(3) Digging process>
In the digging step, after the upper surface of the element isolation region 2 is dug 150 nm from the upper surface of the silicon substrate 1 in the fin portion forming step of the above procedure and conditions, the first saddle type fin portion 11a exposed to the active region 1a is further removed. A second saddle-type fin portion (saddle-type fin portion) 11 is formed by selectively etching and digging up the upper surface.

Below, a more specific example is demonstrated about the digging process (3) of this embodiment, referring FIG.
In the digging step, as shown in FIGS. 6A to 6C, the upper surface of the first saddle type fin portion 11a formed in the fin portion forming step is etched to a desired depth. This etching is preferably performed continuously by changing the conditions in the apparatus used in the fin portion forming step. The desired depth at this time is 40 to 45 nm higher than the upper surface of the deeply isolated element isolation region 2, and in this case, 105 to 110 nm lower than the upper surface of the silicon substrate 1. At this time, etching is performed on the element isolation region 2 under a condition with a high selection ratio, that is, anisotropic dry etching is performed on the condition that the ER of silicon is faster than the ER of the silicon nitride film or silicon oxide film. However, in the etching of the first saddle type fin portion 11a, the narrower the width, the ER of the first saddle type fin portion 11a may be faster than expected. The saddle type fin portion 11a may disappear. Therefore, a condition for lowering the ER of silicon is adopted for the etching of the first saddle type fin portion 11a. As such conditions, a mixed gas plasma atmosphere of chlorine (Cl ₂ ), tetrafluorocarbon (CF ₄ ), SF ₆ and He has a chamber pressure of 3 to 10 Pa and an RF power of 100 to 300 W. Etching is performed by applying. At this time, ER of Si silicon can be controlled at a flow rate of SF _6, for example, by reducing the flow rate of SF _6, it is possible to suppress the silicon etch rate. Thus, the second saddle fin portion (saddle fin portion) 11 can be formed by narrowing the width in the Y direction while controlling the height of the first saddle fin portion 11a.

Thus, in this embodiment, since the inner wall oxide film 24 in the element isolation region 2 is not left on the first side surface 1b and the second side surface 1c, it is not necessary to etch the element isolation region 2 deeper. Therefore, it is possible to sufficiently secure the thickness of the element isolation insulating film 25 after being dug down, and to avoid the problem that current leaks on the surface of the silicon substrate immediately below due to the parasitic MOS effect.

As described above, by adopting the process through the fin part forming process and the digging process, the element isolation regions 2 and the saddle type fin parts 11 that are dug down are alternately arranged in the second direction. The first word groove 3A and the second word groove 3B are formed simultaneously. That is, as shown in FIG. 6A, between the two first word grooves 3A extending in the second direction, two second word grooves 3B extending in the Y direction are arranged. ing. As described above, the memory cell region is configured by repeatedly arranging the first word line 3A and the two second word lines 3B in the X direction as a basic configuration. The active region 1a extending in the first direction is divided into island-shaped small active regions 1aa by two first word grooves 3A serving as element isolation regions in the first direction.

<(4) Embedded Word Line Formation Step>
In the buried word line forming step, after a conductive material is deposited on the bottom surfaces of the plurality of word grooves 3 (first word groove 3A and second word groove 3B), a part of the conductive material is removed by etching. The conductive material is left on the bottom surfaces of the first word groove 3A and the second word groove 3B. Thereby, a dummy word line (first embedded word line) 31 constituting a dummy electrode is formed, and a word line (second embedded word line) 32 constituting a gate electrode is formed.

Hereinafter, a more specific example of the buried word line forming step (4) of the present embodiment will be described with reference to FIG. 7B (FIG. 8B) is a cross-sectional view in the X ′ direction (first direction) as in FIG. 2.
First, as shown in FIGS. 7A and 7B, silicon oxide films are formed on the side and bottom surfaces of the word groove 3 (first word groove 3A, second word groove 3B) by ISSG (In-Situ Steam Generation) oxidation. A gate insulating film 3c is formed. The thickness of the gate insulating film 3c is preferably about 5 nm.

Next, a TiN film and a W film are formed on the entire surface of the wafer so as to fill the first word groove 3A and the second word groove 3B by using the CVD method, and then the position of each upper surface is the upper surface of the silicon substrate 1. The word line 3d is formed by etching back to a position below 70 to 80 nm from the back.
Through the above process, the dummy word line 31 and the word line 32 which are embedded word lines are formed.

<(5) Cap formation process>
In the cap formation step, after the dummy word line 31 and the word line 32 are formed in the above step, the first word groove 3A and the second word groove 3B are further filled with an insulating material, and the first buried word line 31 and the first word line 31 are then filled. 2 A cap forming step of forming the embedded cap insulating film 3e by embedding the embedded word line 32 is provided.

Specifically, a cap insulating film 3e, which is a silicon nitride film, is formed on the entire surface of the wafer by CVD, and is planarized by using CMP as a stop film using CMP. At this time, the mask film 3a may be removed at the time of planarization.

<Bit line formation process>
In the manufacturing method of the present embodiment, a bit line forming step is further provided following the cap forming step (5). As shown in FIGS. 7A and 7B, in the bit line formation step, first, an insulating material is deposited so as to cover the STI structure and the embedded cap insulating film 3e on the silicon substrate 1, thereby forming the first interlayer insulating film 4. To do. Next, a part of the first interlayer insulating film 4 is removed by etching to form a bit contact hole (contact hole) 53, and then the bit contact hole 53 is filled with a conductive material, whereby the first interlayer insulating film 4 is formed. A bit contact plug (bit contact layer) 54 that penetrates and is connected to the active region 1a is formed. Next, a bit line forming step of forming a bit line gate upper layer film (bit line) 55 connected to the bit contact plug 54 by patterning a conductive material on the first interlayer insulating film 4 is provided.

<Capacitor formation process>
In the manufacturing method of the present embodiment, after the bit line forming process, a capacitor forming process as described below can be used. In this capacitor forming step, as shown in FIGS. 7 to 8, first, an insulating material is deposited so as to cover the bit line gate 5 and the first interlayer insulating film 4 to form the second interlayer insulating film 6, and then Then, a part of the second interlayer insulating film 6 is removed by etching to form a contact hole. Next, the contact hole is filled with a conductive material, thereby forming a capacitor contact (capacitor contact layer) 7 penetrating the second interlayer insulating film 6 and connected to the active region 1a.

Next, a stopper film 9 and a third interlayer insulating film 13 are sequentially laminated so as to cover the second interlayer insulating film 6 and the capacitor contact 7, and then the capacitor contact 7 in the stopper film 9 and the third interlayer insulating film 13 is stacked. The cylinder hole 8a is formed by etching away the position corresponding to. Specifically, first, a stopper film 9 made of a silicon nitride film and a third interlayer insulating film 13 made of a silicon oxide film are formed on the entire surface of the wafer by using a CVD method, and a lithography method and dry etching are performed. The cylinder hole 8a is opened.

Next, a thin TiN film is formed so as to cover the entire surface of the wafer, that is, the bottom surface and side walls of the cylinder hole 8a and the top surface of the third interlayer insulating film 13, and then the bottom surface and side walls of the cylinder hole 8a by etching. The lower electrode (lower electrode layer) 8b is formed by leaving the TiN film only on the surface.

Next, a capacitive insulating film 8c and an upper electrode (upper electrode layer) 8d are laminated in this order on the entire surface of the wafer including the inside of the lower electrode 8b. Then, etching is performed by lithography and dry etching so that only the capacitor insulating film 8c and the upper electrode 8d on the memory cell region MCA remain, and other portions are removed. Thereby, the capacitor 8 composed of the lower electrode 8b, the capacitor insulating film 8c, and the upper electrode 8d is formed.

<Wiring layer formation process>
In the manufacturing method of this embodiment, after the capacitor forming step, a wiring layer forming step as described below can be provided.
In this wiring layer formation step, as shown in FIGS. 8A and 8B, first, the fourth interlayer insulating film 14 is formed so as to fill the cylinder hole 8a and cover the upper electrode 8d. Next, a part of the fourth interlayer insulating film 14 is removed by etching to form a contact hole, and then the contact hole is filled with a conductive material so as to penetrate the fourth interlayer insulating film 14 and connect to the upper electrode 8d. A wiring contact 15 is formed. Next, a wiring layer 16 connected to the wiring contact 15 is formed by patterning a conductive material on the fourth interlayer insulating film 14. Thereafter, in the wiring layer forming step, a protective insulating film 17 is formed so as to cover the wiring layer 16 and the fourth interlayer insulating film 14.

In the present embodiment, the semiconductor device A configured as a vertical transistor as shown in FIGS. 1 and 2 is obtained by the above steps.

According to the method for manufacturing a semiconductor device of the present invention as described above, by adopting the above method, the inner wall oxide film 24 formed on the side surface of the active region 1a can be surely removed. It is possible to secure the height of each fin portion without the need to dig deeply. Further, by avoiding excessive digging into the element isolation region 2, the thickness of the element isolation insulating film 25 remaining at the bottom of the element isolation groove 23 can be secured. It is possible to prevent the occurrence of leakage current flowing on the surface of the silicon substrate 1.

Even when the thickness of the inner wall oxide film 24 in the element isolation trench 23 having the STI structure is changed, the inner wall oxide film 24 can be reliably removed only by adjusting the etching rate by changing the flow rate of the etching gas. Therefore, a process with excellent productivity can be realized without depending on the thickness of the inner wall oxide film 24.

A ... Semiconductor device,
1 ... silicon substrate,
11 ... saddle type fin part,
11a ... 1st saddle type fin part,
11b ... 2nd saddle type fin part,
12 ... pillar type fin part 1a ... active region,
1aa ... small active region,
1b, 1bb ... first side surface,
1c, 1cc ... second side surface,
1d: capacitive contact connection region,
1e: Bit contact connection region,
2 ... element isolation region (STI),
23: Element isolation groove,
24 ... inner wall oxide film,
25 ... element isolation insulating film,
3 ... Word groove,
3A ... 1st word groove,
3B ... Second word groove,
31, 31A, 31B, 31C ... dummy word lines (first embedded word lines),
32, 32A, 32B, 32C ... word lines (second embedded word lines),
3a ... Mask film,
3b ... opening,
3c ... gate insulating film,
3d ... word line,
3e: Cap insulating film,
4 ... 1st interlayer insulation film,
5. Bit line gate (BLG: bit line),
53 ... Bit contact hole,
54 ... Bit contact plug (bit contact layer),
55 ... bit line,
56 ... sidewall insulating film,
6 ... 2nd interlayer insulation film,
7: Capacitance contact (capacity contact layer),
8: Capacitor,
8a ... Cylinder hole,
8b ... lower electrode (lower electrode layer),
8c: capacitive insulating film,
8d: upper electrode (upper electrode layer),
9 ... stopper film,
13: Third interlayer insulating film,
14 ... Fourth interlayer insulating film,
15 ... wiring contact,
16 ... wiring layer,
17 ... Protective insulating film,
R: resist mask (second resist mask),
Tr1 ... cell transistor,

Claims

Forming a plurality of element isolation grooves extending in a first direction and repeatedly disposed in a second direction intersecting the first direction and an active region partitioned by the element isolation grooves on a surface layer of the silicon substrate; When,
Forming an inner wall oxide film on a side surface of the active region;
Forming an element isolation region to fill the element isolation trench to form an element isolation region;
A plurality of mask film patterns extending in the second direction across the active region and the element isolation region are formed, and an upper surface of the active region and the element isolation region are formed in the opening of the mask film pattern. Exposing the upper surface;
The inner wall formed on both side surfaces of the active region by etching back the element isolation insulating film whose upper surface is exposed in the element isolation region in the vertical direction and side-etching both side surfaces of the active region Removing the oxide film;
Etching back the silicon substrate whose upper surface is exposed in the active region, thereby forming a saddle type fin portion protruding upward from the upper surface of the element isolation insulating film;
A method for manufacturing a semiconductor device, comprising:
The step of removing the inner wall oxide film selectively removes the element isolation insulating film by anisotropic dry etching, and simultaneously removes the inner wall oxide film by isotropic dry etching, so that the saddle type fin portion The method of manufacturing a semiconductor device according to claim 1, wherein:
The step of removing the inner wall oxide film includes the step of selectively removing the element isolation insulating film by anisotropic dry etching, and then performing stepwise etching to remove the inner wall oxide film by isotropic dry etching. The method for manufacturing a semiconductor device according to claim 1, wherein a mold fin portion is formed.
The step of forming the saddle type fin portion selectively removes the upper surface of the saddle type fin portion formed in the step of removing the inner wall oxide film by anisotropic dry etching, so that the saddle type fin portion is formed. The method of manufacturing a semiconductor device according to claim 1, wherein the height of the semiconductor device is controlled.
In the step of forming the saddle type fin portion, following the step of removing the inner wall oxide film, the saddle type fin portion is subjected to anisotropic dry etching on the upper surface of the saddle type fin portion by changing etching conditions. The method of manufacturing a semiconductor device according to claim 1, wherein the height of the semiconductor device is controlled.
The side surface of the active region has two side surfaces that face each other, and the step of removing the inner wall oxide film reduces the width of the two side surfaces by making the upper width of the two side surfaces smaller than the lower width. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is formed while being inclined.
2. The semiconductor device according to claim 1, wherein the upper surface width in the second direction of the element isolation region and the upper surface width in the second direction of the active region adjacent to the element isolation region are formed to have the same dimension. Manufacturing method.
2. The semiconductor device according to claim 1, wherein a top surface width in the second direction of the element isolation region is smaller than a top surface width in the second direction of the active region adjacent to the element isolation region. Manufacturing method.
An element isolation region extending in the first direction by sequentially forming a mask insulating film and a first resist mask on the silicon substrate and etching the silicon substrate and the mask insulating film using the first resist mask. After forming an element isolation groove with a line-and-space pattern along the planned formation region, an inner wall oxide film is formed on the inner surface of the element isolation groove, and the element isolation groove is filled with an insulating material to form an element isolation insulating film Forming an element isolation region for partitioning an active region by forming a shallow trench isolation (STI) structure;
A mask nitride film and a second resist mask are sequentially formed on the silicon substrate, and then the element isolation region and the active region on the silicon substrate are removed by etching using the second resist mask. When simultaneously forming a plurality of word grooves extending in the second direction intersecting with each other, the element isolation insulating film whose upper surface is exposed in the element isolation region is dug down vertically, and both side surfaces of the active region are Etching to reduce the width in the second direction removes the inner wall oxide film formed on the side wall of the active region, and the silicon substrate is placed above the upper surface of the element isolation insulating film dug down. A fin part forming step of forming a saddle type fin part by projecting; and
Further, a digging step for controlling the height of the saddle type fin portion by selectively etching and digging up the upper surface of the saddle type fin portion exposed in the word groove;
After depositing a conductive material on the bottom surfaces of the plurality of word grooves, a part of the conductive material is removed by etching, and the conductive material is left on the bottom surfaces of the plurality of word grooves, whereby a first buried word line And a buried word line forming step for forming a second buried word line;
A cap forming step of forming a buried cap insulating film by filling the first word groove and the second word groove with an insulating material and embedding the first buried word line and the second buried word line;
A method for manufacturing a semiconductor device, comprising:
The fin part forming step forms the saddle type fin part by selectively removing the element isolation insulating film by anisotropic dry etching and simultaneously removing the inner wall oxide film by isotropic dry etching. A method for manufacturing a semiconductor device according to claim 9.
In the fin portion forming step, the saddle fin portion is selectively removed by anisotropic dry etching and then the inner wall oxide film is removed by isotropic dry etching. The method of manufacturing a semiconductor device according to claim 9, wherein:
The said digging process controls the height of the said saddle type fin part by selectively removing the upper surface of the said saddle type fin part by anisotropic dry etching. A method for manufacturing a semiconductor device.
The digging step controls the height of the saddle type fin portion by anisotropically etching the upper surface of the saddle type fin portion while changing the etching conditions following the fin portion forming step. The method for manufacturing a semiconductor device according to claim 9, wherein:
Further, after the cap forming step, an insulating material is deposited so as to cover the STI structure on the silicon substrate and the cap insulating film to form a first interlayer insulating film, and then one of the first interlayer insulating films is formed. Forming a contact hole by etching away the portion, and then filling the contact hole with a conductive material to form a bit contact layer that penetrates the first interlayer insulating film and is connected to the active region, The bit line forming step of forming a bit line connected to the bit contact layer by patterning a conductive material on the first interlayer insulating film is provided. A method for manufacturing a semiconductor device.
Further, after the bit line forming step, an insulating material is deposited so as to cover the bit line and the first interlayer insulating film to form a second interlayer insulating film, and then a part of the second interlayer insulating film Then, the contact hole is filled with a conductive material to form a capacitive contact layer that penetrates the second interlayer insulating film and is connected to the active region. 15. The method of manufacturing a semiconductor device according to claim 14, further comprising a capacitor forming step of forming a capacitor on the capacitor contact layer.
In the capacitor forming step, after the capacitor contact layer is formed, a stopper film and a third interlayer insulating film are sequentially laminated so as to cover the second interlayer insulating film and the capacitor contact layer, and then the stopper film And forming a cylinder hole by etching and removing a position corresponding to the capacitive contact layer in the third interlayer insulating film, and then covering the bottom surface and side wall of the cylinder hole and covering the upper surface of the third interlayer insulating film. 16. The method of manufacturing a semiconductor device according to claim 15, wherein the lower electrode layer, the capacitor insulating film, and the upper electrode layer are laminated in this order.
Further, after the capacitor forming step, the cylinder hole is buried and a fourth interlayer insulating film is formed so as to cover the upper electrode layer, and then a part of the fourth interlayer insulating film is removed by etching. After the contact hole is formed, the contact hole is filled with a conductive material to form a wiring contact that penetrates the fourth interlayer insulating film and is connected to the upper electrode layer. A wiring layer forming step of forming a protective insulating film so as to cover the wiring layer and the fourth interlayer insulating film after forming a wiring layer connected to the wiring contact by patterning a conductive material on the film The method of manufacturing a semiconductor device according to claim 16, wherein the semiconductor device is manufactured.