WO2013065472A1 - Integrated power converter apparatus and dc-dc converter apparatus to be used therein - Google Patents

Abstract

The objective of the present invention is to reduce the size of an integrated power converter apparatus in which a plurality of power converter apparatuses have been integrated, and of a DC-DC converter apparatus to be used therein. An integrated power converter apparatus according to the present invention has a first power converter apparatus and a second power converter apparatus connected together. The first power converter apparatus is provided with a first power semiconductor module that converts power, a flow-path forming section that forms a flow path through which a coolant flows, a first case that houses the first power semiconductor module and the flow-path forming section, an entrance piping connected to the flow path, and an exit piping connected to the flow path. The second power converter apparatus is provided with a second power semiconductor module that converts power, and a second case that houses the second power semiconductor module. The flow-path forming section comprises an opening section connected to the flow path, and the second case is anchored to the flow-path forming section or the first case such that a portion of the second case closes the opening section.

Description

Integrated power converter and DC-DC converter used therein

The present invention relates to an integrated power converter in which a plurality of power converters are integrated and a DCDC converter used for the same.

Electric vehicles and plug-in hybrid vehicles are equipped with high voltage storage batteries and low voltage storage batteries. The high voltage storage battery supplies power to an inverter device for driving a motor for driving a vehicle. Low voltage storage batteries operate accessories such as lights and radios of vehicles. Such a vehicle is equipped with a DCDC converter device that performs power conversion from a high voltage storage battery to a low voltage storage battery or power conversion from a low voltage storage battery to a high voltage storage battery.

In such a vehicle, it is desirable to make the ratio of the room to the volume of the whole vehicle as large as possible to improve the habitability. For this reason, it is desirable that the inverter device and the DCDC converter device be mounted as small space as possible, especially in the engine room outside the vehicle. For example, in Patent Document 1 below, a structure in which the inverter device and the DC / DC converter device are integrated so that electrolytic corrosion does not occur in the hose connecting the cooling water passage between the inverter device and the DC / DC converter device Proposed.

Since the temperature environment in the engine room is a high temperature range, it is conceivable to accelerate the deterioration of control functions of the inverter device or the DCDC converter device and the deterioration of the structural parts. For this reason, as a cooling mechanism of an inverter device or a DCDC converter device, these devices are generally cooled by a refrigerant composed of a mixture in water, and as a cooling mechanism including this cooling method, the cooling efficiency is high and space saving is improved. Is becoming important.

However, in Patent Document 1 described above, since a cooling mechanism including a cooling pipe is required for each of the inverter device and the DCDC converter device, there is a problem that the cooling path becomes complicated and the space for mounting on the vehicle increases. In addition, there is a problem that the material of the hose is restricted, and it is necessary to control the resistance value of the hose.

JP, 2010-119275, A

The problem to be solved by the present invention is to reduce the size of an integrated power converter in which a plurality of power converters are integrated and a DC-DC converter used for the same.

In order to solve the above problem, an integrated power converter according to the present invention is an integrated power converter in which a first power converter and a second power converter are connected, and the first power converter is: A first power semiconductor module for converting power, a flow path forming portion for forming a flow path through which a cooling refrigerant flows, a first case for storing the first power semiconductor module and the flow path forming body, and the flow path A second power semiconductor module for converting electric power, and a second case for housing the second power semiconductor module, the apparatus including: an inlet pipe connected to each other; and an outlet pipe connected to the flow path. The flow path forming body has an opening connected to the flow path, and the second case is such that the flow path forming body or the first case is formed such that a part of the second case closes the opening. It is fixed to

Further, in order to solve the above problems, the DCDC converter device according to the present invention comprises a high voltage side switching element connected to a high voltage power supply, a low voltage side semiconductor element connected to a low voltage power supply, and a transformer circuit. A case for containing the high voltage side switching element, the low voltage side semiconductor element, and the transformer circuit, the case being a cover for forming a part of a flow path provided in another electronic device Integrally formed with

According to the present invention, it is possible to miniaturize an integrated power converter in which a plurality of power converters are integrated and a DCDC converter used for the same.

It is a perspective view which is a figure which shows the external appearance of an integrated power converter. It is a perspective view which is a figure which shows the external appearance of an integrated power converter. FIG. 6 is a circuit block diagram illustrating the configuration of inverter device 200. FIG. 6 is an exploded perspective view of the inverter device 200. (A) is a perspective view of the power semiconductor module 300a of this embodiment. (B) is sectional drawing when the power semiconductor module 300a of this embodiment is cut | disconnected in the cross section D, and it sees from the direction E. FIG. FIG. 6 is a view showing the power semiconductor module 300a from which the screw 309 and the second sealing resin 351 have been removed from the state shown in FIG. 5 in order to help understanding. (A) is a perspective view, and (b) is a cross-sectional view as viewed from the direction E, cut along the section D as in FIG. 5 (b). Further, (c) shows a cross-sectional view before the fin 305 is pressurized and the curved portion 304A is deformed. It is a figure which shows the power semiconductor module 300a which removed the module case 304 further from the state shown in FIG. (A) is a perspective view, and (b) is a cross-sectional view as viewed from the direction E, cut along the cross section D as in FIGS. 5 (b) and 6 (b). FIG. 8 is a perspective view of a power semiconductor module 300a with the first sealing resin 348 and the wiring insulating portion 608 further removed from the state shown in FIG. 7. It is a figure for demonstrating the assembly process of the module primary sealing body 302. FIG. FIG. 7 is an exploded perspective view of the bottom of the case 10 of the inverter device 200. FIG. 2 is a diagram showing a circuit configuration of a DCDC converter device 100. FIG. 2 is an exploded perspective view of the DCDC converter device 100. FIG. 3 is a cross-sectional view of a power conversion device in which a DCDC converter device 100 and an inverter device 200 are integrated. FIG. 3 schematically shows the arrangement of components in the case of the DCDC converter device 100. It is a perspective view of case 111 of DCDC converter device 100 concerning other examples. It is a perspective view of case 111 of DCDC converter device 100 concerning other examples. It is sectional drawing seen from the arrow direction of the cross section B of FIG. It is sectional drawing seen from the arrow direction of the cross section C of FIG. It is sectional drawing seen from the arrow direction of the cross section D of FIG.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

1 and 2 are perspective views showing the appearance of an integrated power converter. The integrated power converter according to the present embodiment integrates the DCDC converter device 100 and the inverter device 200. In FIGS. 1 and 2, the DCDC converter device 100 and the inverter device 200 are shown separated. The The DCDC converter device 100 is fixed to the case bottom side of the inverter device 200 by a plurality of bolts 113a and 113b. The bolt 113a is a bolt fixed to the DC-DC converter 100 from the side of the inverter 200, and the bolt 113b is a bolt fixed to the side of the inverter 200 from the DC-DC converter 100.

The integrated power conversion device according to the present embodiment is mainly applied to an electric vehicle or the like, and the inverter device 200 drives a traveling motor by electric power from a high voltage storage battery mounted on the vehicle. The vehicle is equipped with a low voltage storage battery for operating accessories such as lights and radio, and the DCDC converter device 100 converts power from high voltage storage battery to low voltage storage battery or from low voltage storage battery to high voltage storage battery Power conversion. Note that the integrated power converter according to the present embodiment can also be applied to power converters other than electric vehicles if they have the same needs as the power converter for electric vehicles.

As shown in FIG. 2, a flow path forming body 19 s that forms the refrigerant flow path 19 is housed in the case 10 of the inverter device 200. The refrigerant flows into the flow path from the inlet pipe 13 and flows out from the outlet pipe 14. The flow path forming body 19 s has an opening 404 connected to the refrigerant flow path 19. The case 111 of the DCDC converter device 100 is fixed to the case 10 of the inverter device 200 so that a part of the case 111 closes the opening 404. The case 111 may be fixed to the flow path forming body 19 s in order to promote heat transfer from the case 111 to the refrigerant flow path 19. The case 111 of the DCDC converter device 100 forms a bottom portion 111 b and a recess 111 d described later.

In the integrated power converter according to the present embodiment, the refrigerant flow path 19 includes the inlet pipe 13 and the outlet pipe 14, and it is important to cool the inverter device 200 whose calorific value is larger than that of the DCDC converter device 100. It is a structure. With the configuration of the present embodiment, the cooling performance of the DC-DC converter 100 can be improved without significantly reducing the cooling performance on the side of the inverter 200.

FIG. 3 is a circuit block diagram for explaining the configuration of inverter device 200. Referring to FIG. In FIG. 3, an insulated gate bipolar transistor is used as a semiconductor element, and hereinafter abbreviated as IGBT. A series circuit 150 of the upper and lower arms is configured by the IGBT 328 and the diode 156 operating as the upper arm, and the IGBT 330 and the diode 166 operating as the lower arm. The inverter circuit 140 includes the series circuit 150 corresponding to three phases of U-phase, V-phase, and W-phase of AC power to be output.

These three phases correspond to the three phase windings of the armature winding of motor generator MG1 corresponding to the traveling motor in this embodiment. A series circuit 150 of upper and lower arms of each of the three phases outputs an alternating current from an intermediate electrode 169 which is a middle point portion of the series circuit. Intermediate electrode 169 is connected to AC bus bar 802 which is an AC power line to motor generator MG1 through AC terminal 159 and AC terminal 188.

The collector electrode 153 of the IGBT 328 of the upper arm is electrically connected to the capacitor terminal 506 on the positive electrode side of the capacitor module 500 via the positive electrode terminal 157. The emitter electrode of the lower arm IGBT 330 is electrically connected to the capacitor terminal 504 on the negative electrode side of the capacitor module 500 through the negative electrode terminal 158.

As described above, the control circuit 172 receives a control command from the upper controller via the connector 21, and based on this, the IGBT 328 constituting the upper arm or the lower arm of the series circuit 150 of each phase constituting the inverter circuit 140. And generates a control pulse, which is a control signal for controlling the IGBT 330, and supplies the control pulse to the driver circuit 174.

The driver circuit 174 supplies drive pulses for controlling the IGBTs 328 and IGBTs 330 constituting the upper arm or lower arm of the series circuit 150 of each phase to the IGBTs 328 and IGBTs 330 of each phase based on the control pulse. Based on the drive pulse from driver circuit 174, IGBT 328 or IGBT 330 performs conduction or cutoff operation, converts DC power supplied from battery 136 into three-phase AC power, and supplies the converted power to motor generator MG1. Be done.

The IGBT 328 includes a collector electrode 153, a signal emitter electrode 155, and a gate electrode 154. The IGBT 330 further includes a collector electrode 163, an emitter electrode 165 for signal, and a gate electrode 164. A diode 156 is electrically connected between the collector electrode 153 and the emitter electrode 155. In addition, a diode 166 is electrically connected between the collector electrode 163 and the emitter electrode 165.

A metal oxide semiconductor type field effect transistor (hereinafter abbreviated as a MOSFET) may be used as the switching power semiconductor element. In this case, the diode 156 and the diode 166 become unnecessary. As a switching power semiconductor element, an IGBT is suitable when the DC voltage is relatively high, and a MOSFET is suitable when the DC voltage is relatively low.

The capacitor module 500 includes a positive side capacitor terminal 506, a negative side capacitor terminal 504, a positive side power supply terminal 509, and a negative side power supply terminal 508. The high voltage DC power from the battery 136 is supplied to the power terminal 509 on the positive side and the power terminal 508 on the negative side via the DC connector 138, and the capacitor terminal 506 on the positive side and the capacitor on the negative side of the capacitor module 500 It is supplied to the inverter circuit 140 from the terminal 504.

On the other hand, DC power converted from AC power by the inverter circuit 140 is supplied to the capacitor module 500 from the capacitor terminal 506 on the positive side and the capacitor terminal 504 on the negative side, and the power supply terminal 509 on the positive side and power supply terminal 508 on the negative side. Are supplied to the battery 136 via the DC connector 138 and stored in the battery 136.

The control circuit 172 includes a microcomputer (hereinafter referred to as a “microcomputer”) for arithmetically processing the switching timing of the IGBT 328 and the IGBT 330. The input information to the microcomputer includes a target torque value required for the motor generator MG1, a current value supplied from the series circuit 150 to the motor generator MG1, and a magnetic pole position of a rotor of the motor generator MG1.

The target torque value is based on a command signal output from a not-shown upper controller. The current value is detected based on a detection signal from the current sensor 180. The magnetic pole position is detected based on a detection signal output from a rotating magnetic pole sensor (not shown) such as a resolver provided in the motor generator MG1. In the present embodiment, the case where the current sensor 180 detects current values of three phases is taken as an example, but current values of two phases may be detected and currents of three phases may be obtained by calculation. .

The microcomputer in control circuit 172 calculates the d-axis and q-axis current command values of motor generator MG1 based on the target torque value, and the calculated d-axis and q-axis current command values and detected d The voltage command values of d axis and q axis are calculated based on the difference between the current values of the axis and q axis, and the calculated voltage command values of d axis and q axis are calculated based on the detected magnetic pole position. Convert to voltage command value of phase, V phase and W phase. Then, the microcomputer generates a pulse-like modulated wave based on the comparison between the fundamental wave (sine wave) and the carrier wave (triangular wave) based on the voltage command values of U phase, V phase and W phase, and the generated modulation The wave is output to the driver circuit 174 as a PWM (pulse width modulation) signal.

When driving the lower arm, the driver circuit 174 outputs a drive signal obtained by amplifying the PWM signal to the gate electrode of the IGBT 330 of the corresponding lower arm. Also, when driving the upper arm, the driver circuit 174 shifts the level of the reference potential of the PWM signal to the level of the reference potential of the upper arm, amplifies the PWM signal, and uses it as a drive signal to drive the corresponding upper arm. Output to the gate electrodes of the IGBTs 328 of FIG.

The microcomputer in the control circuit 172 performs abnormality detection (overcurrent, overvoltage, overtemperature, etc.) to protect the series circuit 150. Therefore, sensing information is input to the control circuit 172. For example, from the emitter electrode 155 for signals of each arm and the emitter electrode 165 for signals, information of the current flowing to the emitter electrodes of the IGBTs 328 and IGBTs 330 is input to the corresponding driver (IC). Thus, each drive unit (IC) performs overcurrent detection, and when an overcurrent is detected, stops the switching operation of the corresponding IGBT 328 and IGBT 330 and protects the corresponding IGBT 328 and IGBT 330 from the overcurrent.

Information on the temperature of the series circuit 150 is input to the microcomputer from a temperature sensor (not shown) provided in the series circuit 150. Also, information on the voltage on the DC positive side of the series circuit 150 is input to the microcomputer. The microcomputer performs over temperature detection and over voltage detection based on the information, and stops the switching operation of all the IGBTs 328 and IGBTs 330 when the over temperature or the over voltage is detected.

The control signal received from the host controller via the connector 21 and the DC voltage received via the DC connector 138 pass through the interface cable 102 and through the opening 201 of the inverter device 200 and through the opening 101 to the DCDC converter It is distributed to the device 100.

FIG. 4 is an exploded perspective view of the inverter device 200. As shown in FIG. The flow path forming body 19s is configured to include the flow path forming portions 12a, 12b, and 12c. The flow path forming portions 12 a, 12 b and 12 c are arranged in a U-shape on the bottom side in the case 10. The flow passage forming portion 12c is disposed to face the flow passage forming portion 12a in parallel.

A plurality of openings 400 for mounting the power semiconductor modules 300a to 300c in the refrigerant flow passage are formed in the flow passage forming portions 12a and 12c parallel to each other. In the example shown in FIG. 4, in the flow path forming portion 12 a provided on the left side in the drawing, two openings 400 in which the power semiconductor modules 300 a and 300 b are mounted are formed. On the other hand, although not visible in the drawing, one opening 400 in which the power semiconductor module 300c is mounted is formed in the flow path forming portion 12c provided in parallel on the opposite side. The openings 400 are closed by fixing the power semiconductor modules 300a to 300c to the flow path forming portions 12a to 12c.

A storage space 405 for storing the capacitor module 500 is formed between one of the first flow path portion 19 a and the other third flow path portion 19 c formed by the flow path formation body 12. It is stored in the storage space 405. Thereby, the condenser module 500 is cooled by the refrigerant flowing into the refrigerant flow path 19. The capacitor module 500 is disposed so as to be surrounded by the flow path forming portions 12a to 12c, and thus can be efficiently cooled.

In addition, since the flow path is formed along the outer side surface of the capacitor module 500, the flow path and the arrangement with the capacitor module 500 and the power semiconductor module 300 are neatly arranged, and the whole becomes smaller.

A bus bar assembly 800, which will be described later, is disposed above the capacitor module 500.

By integrally forming the flow path forming body 19s and the case 10 by casting of an aluminum material, the refrigerant flow path 19 has an effect of strengthening mechanical strength in addition to a cooling effect. Further, by forming by aluminum casting, the flow path forming body 19s and the case 10 become an integral structure, the heat conduction of the entire inverter device 200 is improved, and the cooling efficiency is improved.

The driver circuit board 22 is disposed above the bus bar assembly 800. A metal base plate 11 is disposed between the driver circuit board 22 and the control circuit board 20.

The metal base plate 11 is fixed to the case 10. The metal base plate 11 functions as an electromagnetic shield for the driver circuit board 22 and the circuit group mounted on the control circuit board 20, and also functions to release and cool the heat generated by the driver circuit board 22 and the control circuit board 20. have. The point that the metal base plate 11 has a high noise suppression function will be described later.

The lid 8 is fixed to the metal base plate 11 to protect the control circuit board 20 from external electromagnetic noise.

In the case 10 according to the present embodiment, the portion in which the flow path forming body 12 is stored has a substantially rectangular parallelepiped shape, but a protruding storage portion 10 g is formed from one side of the case 10. A terminal extended from the DCDC converter device 100 and a resistor 450 are stored in the protruding storage portion 10g. Here, the resistor 450 is a resistive element for discharging the charge stored in the capacitor element of the capacitor module 500. As described above, since the electric circuit components between the battery 136 and the capacitor module 500 are concentrated in the protruding storage portion 10g, the wiring can be prevented from being complicated, which can contribute to the downsizing of the entire device. .

The detailed configuration of the power semiconductor modules 300a to 300c used for the inverter circuit 140 will be described with reference to FIGS. 5 to 9. The power semiconductor modules 300a to 300c all have the same structure, and the structure of the power semiconductor module 300a will be described as a representative. In FIGS. 5 to 9, the signal terminal 325U corresponds to the gate electrode 154 and the signal emitter electrode 155 disclosed in FIG. 3, and the signal terminal 325L corresponds to the gate electrode 164 and the emitter electrode 165 disclosed in FIG. Do. The direct current positive electrode terminal 315B is the same as the positive electrode terminal 157 disclosed in FIG. 3, and the direct current negative electrode terminal 319B is the same as the negative electrode terminal 158 disclosed in FIG. Further, the AC terminal 320B is the same as the AC terminal 159 disclosed in FIG.

FIG. 5A is a perspective view of the power semiconductor module 300 a of the present embodiment. FIG. 5 (b) is a cross-sectional view of the power semiconductor module 300 a of the present embodiment taken along the section D and viewed from the direction E.

FIG. 6 is a view showing the power semiconductor module 300a from which the screw 309 and the second sealing resin 351 have been removed from the state shown in FIG. 5 in order to aid understanding. FIG. 6 (a) is a perspective view, and FIG. 6 (b) is a cross-sectional view as viewed in the direction E, cut along the section D, as in FIG. 5 (b). Further, FIG. 6C shows a cross-sectional view before the fins 305 are pressurized and the curved portion 304A is deformed.

FIG. 7 is a diagram showing a power semiconductor module 300a in which the module case 304 is further removed from the state shown in FIG. FIG. 7 (a) is a perspective view, and FIG. 7 (b) is a cross-sectional view as viewed from the direction E by cutting it at the cross section D as in FIGS. 5 (b) and 6 (b).

FIG. 8 is a perspective view of the power semiconductor module 300 a with the first sealing resin 348 and the wiring insulating portion 608 further removed from the state shown in FIG. 7.

FIG. 9 is a view for explaining an assembly process of the module primary sealing body 302. As shown in FIG.
The power semiconductor elements (IGBT 328, IGBT 330, diode 156, diode 166) constituting the series circuit 150 of the upper and lower arms are, as shown in FIGS. 7 and 8, the conductor plate 315 or conductor plate 318 or the conductor plate 320 or conductor plate By 319, it is fixed by sandwiching from both sides. The conductor plate 315 or the like is sealed by the first sealing resin 348 in a state where the heat dissipation surface is exposed, and the insulating sheet 333 is thermocompression-bonded to the heat dissipation surface. As shown in FIG. 7, the first sealing resin 348 has a polyhedral shape (here, a substantially rectangular parallelepiped shape).

The module primary sealing body 302 sealed by the first sealing resin 348 is inserted into the module case 304, sandwiching the insulating sheet 333 and thermocompression-bonded to the inner surface of the module case 304 which is a CAN type cooler. Ru. Here, the CAN-type cooler is a cylindrical cooler having an insertion port 306 on one side and a bottom on the other side. The second sealing resin 351 is filled in the space remaining inside the module case 304.

The module case 304 is made of a member having electrical conductivity, such as an aluminum alloy material (Al, AlSi, AlSiC, Al-C, etc.), and is integrally molded in a jointless state. The module case 304 has a structure in which no opening is provided other than the insertion opening 306, and the insertion opening 306 is surrounded by the flange 304B. Further, as shown in FIG. 5 (a), the first heat radiation surface 307A and the second heat radiation surface 307B, which have surfaces wider than the other surfaces, are disposed facing each other, and are made to face these heat radiation surfaces. Each power semiconductor element (IGBT 328, IGBT 330, diode 156, diode 166) is disposed. The three surfaces connecting the first heat radiation surface 307A and the second heat radiation surface 307B, which are opposite to each other, form a surface sealed with a narrower width than the first heat radiation surface 307A and the second heat radiation surface 307B. The insertion port 306 is formed in the The shape of the module case 304 does not have to be an accurate rectangular parallelepiped, and the corners may have a curved surface as shown in FIG. 5 (a).

By using a metal case of such a shape, even if the module case 304 is inserted into the refrigerant flow path 19 through which a refrigerant such as water or oil flows, a seal for the refrigerant can be secured by the flange 304B, so cooling A medium can be prevented from invading the inside of the module case 304 with a simple configuration. Further, the fins 305 are uniformly formed on the first heat radiation surface 307A and the second heat radiation surface 307B facing each other. Furthermore, a curved portion 304A whose thickness is extremely thin is formed on the outer periphery of the first heat radiating surface 307A and the second heat radiating surface 307B. The thickness of the curved portion 304A is extremely reduced to such an extent that the curved portion 304A is easily deformed by pressing the fin 305. Therefore, productivity after the module primary sealing body 302 is inserted is improved.

As described above, the gap between the conductor plate 315 or the like and the inner wall of the module case 304 can be reduced by thermocompression-bonding the conductor plate 315 or the like to the inner wall of the module case 304 via the insulating sheet 333. The heat generated from the element can be efficiently transferred to the fins 305. Furthermore, by providing the insulating sheet 333 with a certain thickness and flexibility, the generation of thermal stress can be absorbed by the insulating sheet 333 and it becomes good for use in a power conversion device for vehicles with severe temperature change .

Outside the module case 304, metal DC positive wire 315A and DC negative wire 319A for electrically connecting to the capacitor module 500 are provided, and a DC positive electrode terminal 315B (157) and DC are formed at the tip thereof. Negative electrode terminals 319B (158) are respectively formed. Further, a metal AC wire 320A for supplying AC power to the motor generator MG1 or MG2 is provided, and an AC terminal 320B (159) is formed at the tip thereof. In the present embodiment, as shown in FIG. 8, the DC positive wiring 315A is connected to the conductor plate 315, the DC negative wiring 319A is connected to the conductor plate 319, and the AC wiring 320A is connected to the conductor plate 320.

Further, metal signal wires 324U and 324L for electrically connecting to the driver circuit 174 are provided outside the module case 304, and the signal terminals 325U (154, 155) and the signal terminals 325L are provided at the tip thereof. (164, 165) are respectively formed. In the present embodiment, as shown in FIG. 8, the signal wiring 324U is connected to the IGBT 328, and the signal wiring 324L is connected to the IGBT 328.

DC positive electrode wiring 315A, DC negative electrode wiring 319A, AC wiring 320A, signal wiring 324U and signal wiring 324L are integrally molded as auxiliary mold body 600 in a state of being mutually insulated by wiring insulating portion 608 molded of a resin material. Be done. The wire insulating portion 608 also functions as a support member for supporting each wire, and the resin material used for this is suitably a thermosetting resin or a thermoplastic resin having insulation. As a result, the insulation between the DC positive wiring 315A, the DC negative wiring 319A, the AC wiring 320A, the signal wiring 324U, and the signal wiring 324L can be secured, and high density wiring can be achieved.

The auxiliary molded body 600 is metal-joined to the module primary sealing body 302 at the connection portion 370 and then fixed to the module case 304 by a screw 309 penetrating a screw hole provided in the wiring insulating portion 608. For metal bonding between the module primary sealing body 302 and the auxiliary mold body 600 at the connection portion 370, for example, TIG welding can be used.

The direct current positive wire 315A and the direct current negative wire 319A are stacked on each other with the wire insulating portion 608 interposed therebetween and are formed to extend substantially in parallel. With such an arrangement and shape, current instantaneously flowing in the switching operation of the power semiconductor element flows in the opposite direction and in the opposite direction. As a result, the magnetic fields generated by the current act to cancel each other, and this action makes it possible to reduce the inductance. The AC wiring 320A and the signal terminals 325U and 325L also extend in the same direction as the DC positive wiring 315A and the DC negative wiring 319A.

The connection portion 370 where the module primary sealing body 302 and the auxiliary molded body 600 are connected by metal bonding is sealed in the module case 304 by the second sealing resin 351. As a result, a necessary insulation distance can be stably secured between the connection portion 370 and the module case 304, so that the power semiconductor module 300a can be miniaturized as compared with the case where the sealing is not performed.

As shown in FIG. 8, on the auxiliary module 600 side of the connection portion 370, auxiliary module side direct current positive electrode connection terminal 315C, auxiliary module side direct current negative electrode connection terminal 319C, auxiliary module side alternating current connection terminal 320C, auxiliary module side signal connection The terminal 326U and the auxiliary module side signal connection terminal 326L are arranged in line. On the other hand, on the module primary sealing body 302 side of the connection portion 370, an element-side DC positive electrode connecting terminal 315D, an element-side DC negative electrode connecting terminal 319D, along one surface of the first sealing resin 348 having a polyhedral shape. The element-side AC connection terminal 320D, the element-side signal connection terminal 327U, and the element-side signal connection terminal 327L are arranged in a line. In this manner, the structure in which the terminals are arranged in a line in the connection portion 370 facilitates the manufacture of the module primary sealing body 302 by transfer molding.

Here, the positional relationship of each terminal when the part extended outside from the 1st sealing resin 348 of the module primary sealing body 302 is seen as one terminal for every kind is described. In the following description, a terminal constituted by the direct current positive electrode wiring 315A (including the direct current positive electrode terminal 315B and the auxiliary module side direct current positive electrode connection terminal 315C) and the element side direct current positive electrode connection terminal 315D is referred to as a positive electrode side terminal. A terminal composed of a DC negative electrode terminal 319B and an auxiliary module side DC negative electrode connection terminal 319C and an element side DC negative electrode connection terminal 315D is referred to as a negative electrode side terminal, and an AC wiring 320A (AC terminal 320B and auxiliary module side AC connection A terminal configured by the terminal 320C and the element-side AC connection terminal 320D is referred to as an output terminal, and is configured by the signal wiring 324U (including the signal terminal 325U and the auxiliary module side signal connection terminal 326U) and the element-side signal connection terminal 327U. Terminal called the upper arm signal terminal, It refers to a line 324L (including signal terminals 325L and the auxiliary module-side signal connecting terminals 326L) and the terminal constituted by the element-side signal connecting terminals 327L and the signal terminal for the lower arm.

Each of the above-described terminals protrudes from the first sealing resin 348 and the second sealing resin 351 through the connection portion 370, and each protruding portion from the first sealing resin 348 (element-side direct current positive electrode connection terminal 315D , Element-side DC negative connection terminal 319D, element-side AC connection terminal 320D, element-side signal connection terminal 327U and element-side signal connection terminal 327L) are one surface of the first sealing resin 348 having a polyhedral shape as described above. Lined up along the. Further, the positive electrode side terminal and the negative electrode side terminal protrude from the second sealing resin 351 in a stacked state, and extend out of the module case 304. With such a configuration, when clamping the power semiconductor element with the first sealing resin 348 to produce the module primary sealing body 302, the connection between the power semiconductor element and the corresponding terminal is performed. It is possible to prevent the occurrence of excessive stress on the part or a mold gap. In addition, since magnetic flux in the direction of canceling each other is generated by the current in the opposite direction flowing through each of the stacked positive electrode side terminal and negative electrode side terminal, it is possible to reduce the inductance.

In the auxiliary module 600 side, the auxiliary module side direct current positive electrode connection terminal 315C and the auxiliary module side direct current negative electrode connection terminal 319C are the tips of the direct current positive electrode wiring 315A opposite to the direct current positive electrode terminal 315B and the direct current negative electrode terminal 319B, and the direct current negative electrode wiring 319A. It is formed in each part. Further, the auxiliary module side AC connection terminal 320C is formed at the tip end of the AC wiring 320A on the opposite side to the AC terminal 320B. The auxiliary module side signal connection terminals 326U and 326L are respectively formed at tip portions of the signal wirings 324U and 324L opposite to the signal terminals 325U and 325L.

On the other hand, on the module primary sealing body 302 side, the element side direct current positive electrode connection terminal 315D, the element side direct current negative electrode connection terminal 319D, and the element side alternating current connection terminal 320D are respectively formed in the conductor plates 315, 319, 320. The element-side signal connection terminals 327U and 327L are connected to the IGBTs 328 and IGBTs 330 by bonding wires 371, respectively.

As shown in FIG. 9, the conductor plate 315 on the direct current positive electrode side and the conductor plate 320 on the alternating current output side, and the element side signal connection terminals 327U and 327L are substantially identical to each other in a state of being connected to the common tie bar 372 It is integrally processed so as to become a planar arrangement. The collector electrode of the IGBT 328 on the upper arm side and the cathode electrode of the diode 156 on the upper arm side are fixed to the conductor plate 315. The collector electrode of the lower arm IGBT 330 and the cathode electrode of the lower arm diode 166 are fixed to the conductor plate 320. Conductor plate 318 and conductor plate 319 are arranged substantially flush with each other on IGBTs 328 and 330 and diodes 155 and 166. The emitter electrode of the IGBT 328 on the upper arm side and the anode electrode of the diode 156 on the upper arm side are fixed to the conductor plate 318. The emitter electrode of the lower arm IGBT 330 and the anode electrode of the lower arm diode 166 are fixed to the conductor plate 319. Each power semiconductor element is fixed to the element fixing portion 322 provided on each conductor plate via the metal bonding material 160. The metal bonding material 160 is, for example, a solder material, a low temperature sintering bonding material including a silver sheet and fine metal particles, or the like.

Each power semiconductor element has a plate-like flat structure, and each electrode of the power semiconductor element is formed on the front and back surfaces. As shown in FIG. 9, each electrode of the power semiconductor element is sandwiched between the conductor plate 315 and the conductor plate 318, or the conductor plate 320 and the conductor plate 319. That is, the conductor plate 315 and the conductor plate 318 are in a stacked arrangement facing each other substantially in parallel via the IGBT 328 and the diode 156. Similarly, the conductor plate 320 and the conductor plate 319 are in a stacked arrangement facing substantially in parallel via the IGBT 330 and the diode 166. The conductor plate 320 and the conductor plate 318 are connected via the intermediate electrode 329. By this connection, the upper arm circuit and the lower arm circuit are electrically connected to form an upper and lower arm series circuit. As described above, the IGBT 328 and the diode 156 are sandwiched between the conductor plate 315 and the conductor plate 318, and the IGBT 330 and the diode 166 are sandwiched between the conductor plate 320 and the conductor plate 319, and the conductor plate 320 and the conductor plate 318 are intermediate electrodes. Connect via 329. Thereafter, the control electrode 328A of the IGBT 328 and the element-side signal connection terminal 327U are connected by the bonding wire 371, and the control electrode 330A of the IGBT 330 and the element-side signal connection terminal 327L are connected by the bonding wire 371.

FIG. 10 is an exploded perspective view seen from the bottom side of the case 10 of the inverter device 200. As shown in FIG. The case 10 has a rectangular parallelepiped shape including four side walls 10a, 10b, 10c and 10d. The U-shaped refrigerant flow path 19 is composed of three linear flow path portions (a first flow path portion 19a, a second flow path portion 19b, and a third flow path portion 19c). The opening 404 is also U-shaped, and the opening 404 is closed by the case 111 of the DCDC converter device 100. A seal member 409 is provided between the case 111 and the case 10 to maintain the airtightness of the refrigerant flow path.

The portion indicated by reference numeral 10 e forms the bottom of a storage space 405 (see FIG. 4) for storing the capacitor module 500.

The refrigerant flows into the inlet pipe 13 as indicated by the arrow 417, and flows in the direction of the arrow 418 in the first flow path 19a formed along the longitudinal side of the case 10. Further, the refrigerant flows in the direction of the arrow 421 in the second flow passage portion 19 b formed along the short side of the case 10. The second flow passage portion 19 b forms a return flow passage. Further, the refrigerant flows through the third flow passage portion 19 c of the flow passage forming portion 12 formed along the longitudinal side of the case 10. The third flow passage portion 19 c is provided in parallel to the first flow passage portion 19 a with the capacitor module 500 interposed therebetween. The refrigerant flows out of the outlet pipe 14 as indicated by an arrow 423.

Each of the first flow passage portion 19a, the second flow passage portion 19b, and the third flow passage portion 19c is formed such that the depth direction is larger than the width direction.

Next, the DCDC converter device 100 will be described. FIG. 11 is a diagram showing a circuit configuration of the DC-DC converter device 100. As shown in FIG. As shown in FIG. 11, the DC-DC converter device 100 according to the present embodiment is compatible with bidirectional DC-DC that performs step-down and step-up. Therefore, the step-down circuit (HV circuit) and the booster circuit (LV circuit) are not in the diode rectification but in the synchronous rectification configuration. Also, in order to achieve high output in HV / LV conversion, a large current component is adopted as the switching element, and the smoothing coil is enlarged.

Specifically, an H bridge type synchronous rectification switching circuit configuration (H1 to H4) using a MOSFET having a recovery diode is used on both the HV / LV side. In switching control, zero cross switching is performed at a high switching frequency (100 kHz) using an LC series resonant circuit (Cr, Lr) to improve the conversion efficiency and reduce the heat loss. In addition, an active clamp circuit is provided to reduce loss due to circulating current during step-down operation, and to suppress surge voltage generation during switching to reduce the withstand voltage of the switching element, thereby reducing the withstand voltage of the circuit component. To make the device smaller.

Furthermore, in order to secure a high output on the LV side, a full-wave rectification type double current (current doubler) system was used. In addition, in order to achieve high output, a high output is secured by simultaneously operating a plurality of switching elements. In the example of FIG. 11, four elements are arranged in parallel like SWA1 to SWA4 and SWB1 to SWB4. In addition, high output is realized by arranging the small-sized reactors (L1 and L2) of the switching circuit and the smoothing reactor in parallel in two circuits so as to give symmetry. As described above, by arranging the small reactors in two circuits, it is possible to miniaturize the entire DC-DC converter as compared to the case where one large reactor is arranged.

The lower part of the circuit configuration diagram of FIG. 11 shows a drive circuit and operation detection circuit for a step-down circuit and a booster circuit, and a control circuit unit having a communication function with a higher-level control device via an inverter device. By making the communication with the upper control device via the inverter device, the communication interface with the upper control device is common even in each of the configuration in which the inverter device and the DCDC converter device are integrated and the configuration of the inverter device alone. It becomes possible.

12, 13 and 14 are diagrams for explaining the arrangement of parts in DCDC converter apparatus 100. FIG. FIG. 12 is an exploded perspective view of the DC-DC converter device 100. As shown in FIG. FIG. 13 is a cross-sectional view of a power conversion device in which DCDC converter device 100 and inverter device 200 are integrated. FIG. 14 is a view schematically showing the arrangement of components in the case of DCDC converter apparatus 100. As shown in FIG.

As shown in FIG. 12, the circuit components of the DC-DC converter device 100 are housed in a case 111 made of metal (for example, made of aluminum die cast). The case cover 112 is bolted to the opening of the case 111. On the bottom of case 111, main transformer 33, inductor element 34, power semiconductor module 35 having switching elements H1 to H4 mounted, booster circuit board 32 having switching element 36 mounted, capacitor 38, etc. are mounted. It is done. The main heat generating components are the main transformer 33, the inductor element 34, the power semiconductor module 35, and the switching element 36.

The main transformer 33 corresponds to the transformer Tr, the inductor element 34 to the reactors L1 and L2 of the current doubler, and the switching element 36 to the switching elements SWA1 to SWA4 and SWB1 to SWB4, respectively. It corresponds. The switching elements S1 and S2 of FIG. 11 and the like are also mounted on the booster circuit substrate 32.

The terminals 39 of the switching elements H1 to H4 extend toward the opening of the case 111, and are connected to the step-down circuit board 31 disposed above the power semiconductor module 35. The step-down circuit board 31 is fixed on a plurality of support members protruding upward from the bottom surface of the case 111. In the power semiconductor module 35, the switching elements H1 to H4 are mounted on a metal substrate on which a pattern is formed, and the back surface side of the metal substrate is fixed in close contact with the bottom of the case. The booster circuit substrate 32 on which the switching element 36 is mounted is also formed of the same metal substrate. In FIG. 12, the booster circuit board 32 is shown by a broken line because it can not be seen behind the capacitor 38 or the like.

The control circuit board 30 on which a control circuit for controlling switching elements provided in the step-up circuit and the step-down circuit is mounted is fixed on a metal base plate 37. The base plate 37 is fixed to a plurality of support portions 111 a protruding upward from the bottom of the case 111. Thus, the control circuit board 30 is disposed above the heat generating components (the main transformer 33, the inductor element 34, the power semiconductor module 35, etc.) disposed on the bottom of the case via the base plate 37.

The arrangement of components provided in DCDC converter device 100 will be described with reference to FIGS. 13 and 14. 13 is a cross-sectional view of the cross section A of FIG. 10 as viewed in the direction of the arrow. As described above, in the case 10 of the inverter device 200, the flow path forming portions 12a to 12c are provided along the side walls 10a, 10b, and 10c. In the cross-sectional view shown in FIG. 13, only the flow path forming portions 12 a and 12 c are shown.

A first flow passage portion 19a is formed in the flow passage forming portion 12a along the side wall 10a, and a second flow passage portion 19b is formed in the flow passage forming portion 12b along the side wall 10b. A third flow passage portion 19c is formed in the passage forming portion 12c. The power semiconductor module 300a is inserted into the first flow passage 19a, and the power semiconductor module 300c is inserted into the third flow passage 19c.

In the case 111 of the DCDC converter device 100, a recess 111d is formed on the outer peripheral surface of the bottom of the case 111. As shown in FIG. 1, the recess 111 d of the case 111 is opposed to the first flow passage 19 a, the second flow passage 19 b, and the third flow passage 19 c provided on the outer peripheral surface of the bottom of the case 10.

The main transformer 33 is fixed to the inner circumferential surface of the case 111 facing the first flow passage 19a. On the other hand, the booster circuit board 32 and the capacitor 38 mounted on the switching element 36 are fixed to the inner circumferential surface of the case 111 facing the third flow passage 19 c.

The base plate 37 is bolted on a support portion 111 a formed on the case 111. The control circuit board 30 is fixed on a convex portion 37 a formed on the upper surface of the base plate 37 by a bolt or the like. A case cover 112 is attached to the opening of the case 111, and the case 111 is sealed.

The recess 111 d of the case 111 forms a part of the wall of the refrigerant flow path 19 of the case 10 of the inverter device 200. Therefore, the case 111 is directly cooled by the refrigerant flowing through the first flow passage portion 19a, the second flow passage portion 19b, and the third flow passage portion 19c.

In addition, by fixing a component that generates a large amount of heat among the components of the DCDC converter device 100 to the bottom of the case 111, cooling is effectively performed. Further, since the base plate 37 is formed of metal, heat generated at the control circuit board 30 is transmitted to the case 10 through the support portion 111 a and the case 111. Further, the base plate 37 functions as a shielding member of the radiation heat from the heat generating component provided on the bottom of the case 111, and also functions as a shield that shields the switching radiation noise from the switching element by using a copper material or the like. Do.

The case 10 of the inverter device 200 has an opening 201, and the case 111 of the DC-DC converter 100 has an opening 101 on the surface facing the case 10. The bonding member 103 is fitted to the opening 101 and the opening 201. A seal member 104 is provided between the joint member 103 and the case 10 and between the joint member 103 and the case 111 to maintain airtightness with the outside.

Further, the power conducting wire 701 transmits drive power to a drive circuit unit that generates a drive voltage of a switching element such as the step-down circuit unit 31 or the like. The communication lead 702 transmits a signal for driving the drive circuit unit. In the present embodiment, a cable having an interface function between the inverter device 200 and the DCDC converter device 100, such as the power lead 701 and the communication lead 702, is defined as an interface cable.

The interface cable connects the inverter device 200 and the DCDC converter device 100 through a through hole formed in the bonding member 103. In other words, the interface cable connects the inverter device 200 and the DCDC converter device 100 through the opening 201 and the opening 101. In the present embodiment, the surface on which the opening 201 and the opening 101 are formed is formed such that the case 10 and the case 111 face each other and the interface cable is covered with the metal case 10 and the case 111. . Thereby, the case 10 and the case 111 can strengthen the electromagnetic shield, and the electromagnetic noise emitted from the opening 201 and the opening 101 can be reduced.

Further, in the case 111, concave portions 111d are respectively formed in portions facing the first flow passage portion 19a, the second flow passage portion 19b, and the third flow passage portion 19c. Thereby, the part in which the recessed part 111d was formed becomes thin, and can accelerate cooling of the DCDC converter apparatus 100 side.

The plan view of FIG. 14 shows the arrangement of heat-generating components provided on the bottom surface portion 111b of the case 111, and shows a state in which the case cover 112 is removed. The broken line indicates the arrangement of the first flow passage 19 a, the second flow passage 19 b and the third flow passage 19 c provided in the case 10 of the inverter device 200.

The main transformer 33 and the two inductor elements 34 are disposed on the bottom of the case opposite to the first flow path 19a. Further, the power semiconductor module 35 and the step-down circuit board 31 that constitute the step-down circuit are mainly disposed on the bottom surface portion 111 b facing the second flow passage portion 19 b. The switching element 36 and the booster circuit board 32 which constitute the booster circuit are disposed on the bottom surface part 111b opposed to the third flow passage part 19c. As described above, parts having a relatively large calorific value are disposed at positions facing the first flow passage 19a, the second flow passage 19b, and the third flow passage 19c to increase the cooling efficiency.

In particular, when the power semiconductor module 35 is disposed on the bottom of the case 111 so as to face the second flow path portion 19 b, the temperature rise of the MOSFET in the power semiconductor module 35 can be suppressed. It becomes easy to exhibit.

In addition, when the main transformer 33 is disposed on the bottom of the case 111 so as to face the first flow path 19a, the temperature rise of the winding of the main transformer 33 can be suppressed, and the performance of the DCDC converter device 100 is exhibited. It will be easier.

In addition, in order to exhibit the same operation and effect as the present embodiment, a cover for closing the opening 404 of the case 10 of the inverter device 200 is provided, and the case of the DCDC converter device 100 so that the heat conduction of the cover becomes good. It may be integrated with 111.

FIGS. 15 to 19 show another embodiment of the case 111 of the DC-DC converter device 100. FIG.

FIG. 15 is a perspective view of a case 111 of a DC-DC converter device 100 according to another embodiment. In the present embodiment, the case 111 of the DC-DC converter device 100 is provided with a recess 111 e. FIG. 17 is a cross-sectional view of the cross section B of FIG. 15 as viewed from the arrow direction. 18 is a cross-sectional view of the cross section C of FIG. 15 as viewed from the arrow direction.

The recess 111d according to the present embodiment is disposed at a position facing the first flow passage 19a, the second flow passage 19b, and the third flow passage 19c, as in the above-described embodiment. The recess 111 e is formed in a portion different from the recess 111 d and is disposed at a position to be sandwiched by the recess 111 d. The recess 111 e faces the bottom 10 e of the case 10 of the inverter device 200. A space formed by the recess 111 e and the bottom 10 e is connected to the first flow passage 19 a, the second flow passage 19 b, and the third flow passage 19 c. As a result, the refrigerant flowing in the first flow passage portion 19a, the second flow passage portion 19b, and the third flow passage portion 19c flows into the space formed by the recess 111e and the bottom portion 10e. Therefore, the cooling performance of the central portion of the bottom portion 10e disposed at a position far from the flow passage portion can be improved. In the present embodiment, it is possible to improve the cooling conditions of the capacitor module 500 and the booster circuit board 32 located at the center of the bottom surface 10 e. Also, the temperature of the switching element 36 on the booster circuit substrate 32 can be reduced. Further, the weight of the case 111 can be reduced.

Further, as shown in FIG. 17, a projection 105 projecting toward the inverter device 200 is provided at the opening 101 of the DCDC converter device 100 so that the joining member 103 described in the above embodiment is not necessary. Also, the seal member 104 maintains airtightness with the outside of the inverter device 200.

FIG. 16 is a perspective view of the case 111 of the DC-DC converter device 100 according to another embodiment. The case 111 of the DCDC converter device 100 is formed with a recess 111 e and a protrusion 111 f. FIG. 19 is a cross-sectional view of the cross section D of FIG. 16 as viewed from the arrow direction.

The recess 111e has the same configuration and function as those of the above-described embodiment. The convex portion 111 f protrudes toward the second flow passage portion 19 b described in the above embodiment. As a result, the cooling refrigerant flowing through the second flow passage portion 19 b is diverted to the concave portion 111 e side to promote flow. In addition, the detour flow volume which flows to the recessed part 111e side increases, so that the height of this convex part 111f is high. Therefore, the height of the convex portion 111 f can be set in accordance with the electronic component to be cooled by the concave portion 111 e.

The above description is merely an example, and when interpreting the invention, the correspondence between the items described in the embodiment and the items described in the claims is not limited or restricted at all. For example, in the embodiment described above, the power converter mounted on a vehicle such as PHEV or EV has been described as an example, but the present invention is not limited to these and is also applied to a power converter used for a vehicle such as a construction machine can do.

10, 111 Case 10a to 10d Sidewall 10f Side 19 Refrigerant channel 19a First channel 19b Second channel 19c Third channel 20, 30 Control circuit board 33 Main transformer 34 Inductor element 35 Power semiconductor module 36 Switching Element 37 Base plate 100 DCDC converter device 101, 201 Opening portion 103 Bonding member 104, 409 Seal member 111a Support portion 111b Bottom portion 111d, 111e Recess 111f Convex portion 200 Inverter device

Claims (14)

1. An integrated power converter in which a first power converter and a second power converter are connected, comprising:
   The first power converter includes a first power semiconductor module for converting power, a flow path forming portion for forming a flow path for a cooling refrigerant, a first power semiconductor module, and a flow path forming body. 1 case, an inlet pipe connected to the flow path, and an outlet pipe connected to the flow path,
   The second power converter includes a second power semiconductor module for converting power, and a second case for housing the second power semiconductor module.
   The flow path forming body has an opening connected to the flow path,
   The second case is an integrated power converter fixed to the flow path forming body or the first case such that a part of the second case closes the opening.
2. An integrated power converter according to claim 1, wherein
   The one part of said 2nd case which blocks the said opening part forms the recessed part in the part which opposes the said flow path.
3. An integrated power converter according to claim 1, wherein
   A portion of the second case closing the opening forms a recess in a portion different from the portion facing the flow path,
   The said recessed part is an integrated power converter connected with the said flow path.
4. An integrated power converter according to claim 3, wherein
   A part of the second case closing the opening has a protrusion protruding toward the inside of the flow path,
   The said convex part diverts the said cooling refrigerant | coolant which flows in the said flow path to the said recessed part of 2nd case, The integrated power converter device.
5. The integrated power converter according to any one of claims 1 to 4, comprising:
   The second power semiconductor module is disposed on a bottom surface of the second case so as to face the flow path.
6. The integrated power converter according to any one of claims 1 to 5, comprising:
   The first power converter outputs an alternating current for driving a vehicle drive motor,
   The second power conversion device includes a high voltage side switching element housed in the second power semiconductor module and connected to a high voltage power supply, a low voltage side semiconductor element connected to a low voltage power supply, and a transformer circuit. DCDC converter with
   The integrated power converter according to claim 1, wherein the transformer circuit is disposed on a bottom surface of the second case so as to face the flow path.
7. An integrated power converter according to claim 6, wherein
   The flow path forming body has a first flow path and a second flow path formed in parallel with the first flow path,
   The transformer circuit is disposed on the bottom surface of the second case so as to face the first flow path,
   The second power semiconductor module is disposed on a bottom surface of the second case so as to face the second flow path.
8. The integrated power converter according to claim 7, wherein
   The flow path forming body has a third flow path connecting the first flow path and the second flow path,
   The integrated power conversion device, wherein the low voltage side semiconductor element is disposed on the bottom surface of the second case so as to face the third flow path.
9. The integrated power converter according to any one of claims 6 and 7, wherein
   The first power converter has a capacitor for smoothing a direct current supplied to the first power semiconductor module,
   The integrated power converter according to claim 1, wherein the capacitor is sandwiched between the first flow path and the second flow path.
10. An integrated power converter according to claim 1, wherein
    The first power converter outputs an alternating current for driving a vehicle drive motor,
    The second power conversion device includes a high voltage side switching element housed in the second power semiconductor module and connected to a high voltage power supply, a low voltage side semiconductor element connected to a low voltage power supply, and a transformer circuit. A drive circuit for driving the high voltage side switching element and the low voltage side semiconductor element, a power lead for transmitting drive power of the drive circuit, and a communication lead for transmitting a signal for driving the drive circuit. And a DCDC converter,
    The first case has a first opening,
    The second case has a second opening on a surface facing the first case,
    The second opening is provided to face the first opening,
    The power conducting wire and the communication conducting wire pass through the first opening and the second opening, and obtain the drive power and the drive signal of the drive circuit unit from the first power converter side. .
11. The integrated power converter according to claim 10, wherein
    The said 2nd case is an integrated power converter device which has a convex part fitted by the said 1st opening part.
12. The integrated power converter according to any one of claims 1 to 11, wherein
    A part of the second case closing the opening is a cover fixed to the first case,
    The integrated power converter, wherein the cover is integrally formed with the second case.
13. A high voltage side switching element connected to a high voltage power supply,
    A low voltage side semiconductor element connected to a low voltage power supply;
    Transformer circuit,
    And a case for housing the high voltage side switching element, the low voltage side semiconductor element, and the transformer circuit.
    The said case is a DCDC converter apparatus integrally formed with the cover for forming a part of flow path provided in other electronic devices.
14. 14. The DCDC converter device according to claim 13, wherein
    The DCDC converter device wherein the second power semiconductor module is disposed on the bottom surface of the case so as to face the flow path.

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