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WO2013045960A3 - Procedure and device for measuring silicon temperature and over-temperature protection of a power insulated gate bipolar transistor - Google Patents

Procedure and device for measuring silicon temperature and over-temperature protection of a power insulated gate bipolar transistor Download PDF

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Publication number
WO2013045960A3
WO2013045960A3 PCT/HR2012/000020 HR2012000020W WO2013045960A3 WO 2013045960 A3 WO2013045960 A3 WO 2013045960A3 HR 2012000020 W HR2012000020 W HR 2012000020W WO 2013045960 A3 WO2013045960 A3 WO 2013045960A3
Authority
WO
WIPO (PCT)
Prior art keywords
temperature
over
threshold voltage
insulated gate
gate bipolar
Prior art date
Application number
PCT/HR2012/000020
Other languages
French (fr)
Other versions
WO2013045960A2 (en
Inventor
Ivan BAHUN
Original Assignee
Končar - Elecktrična Vozila D.D.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Končar - Elecktrična Vozila D.D. filed Critical Končar - Elecktrična Vozila D.D.
Publication of WO2013045960A2 publication Critical patent/WO2013045960A2/en
Publication of WO2013045960A3 publication Critical patent/WO2013045960A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K2217/00—Temperature measurement using electric or magnetic components already present in the system to be measured

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

This invention is based on the fact that the threshold voltage of power insulated gate bipolar transistors linearly decreases with an increase of silicon temperature. Threshold voltage according to this invention is determined through voltage detection between the control and power connections of the transistor emitter. Silicon temperature is determined from the threshold voltage measured in such a way on the basis of the predetermined linear threshold voltage temperature dependency on the silicon temperature for a certain transistor. The measured threshold voltage is used for designing over-temperature protection and for measuring silicon temperature in real time in operational conditions. Fig. 2 shows a block diagram of the device (1) for measuring silicon temperature and over-temperature protection of power insulated gate bipolar transistor (20). The device (1) consists of a circuit (2) for voltage detection between the control and power connections of the transistor emitter, circuit (3) for over- temperature protection and measuring silicon temperature and circuit (4) for turning transistor 20 on and off.
PCT/HR2012/000020 2011-09-26 2012-09-24 Procedure and device for measuring silicon temperature and over-temperature protection of a power insulated gate bipolar transistor WO2013045960A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
HRP20110689AA HRP20110689B1 (en) 2011-09-26 2011-09-26 Device and method for measuring silicon temperature and overheating protection of insulated gate bipolar power transistors
HRP20110689A 2011-09-26

Publications (2)

Publication Number Publication Date
WO2013045960A2 WO2013045960A2 (en) 2013-04-04
WO2013045960A3 true WO2013045960A3 (en) 2014-01-16

Family

ID=47189974

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/HR2012/000020 WO2013045960A2 (en) 2011-09-26 2012-09-24 Procedure and device for measuring silicon temperature and over-temperature protection of a power insulated gate bipolar transistor

Country Status (2)

Country Link
HR (1) HRP20110689B1 (en)
WO (1) WO2013045960A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3049779B1 (en) * 2013-09-24 2017-11-15 ABB Schweiz AG Method and apparatus for determining an actual junction temperature of an igbt device
CN113884209B (en) * 2021-09-09 2023-10-10 芯原微电子（成都）有限公司 Low-power consumption over-temperature detection circuit

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060792A (en) * 1997-05-20 2000-05-09 International Rectifier Corp. Instantaneous junction temperature detection
US6088208A (en) * 1997-03-31 2000-07-11 Matsushita Electronics Corporation Electronic device, electronic switching apparatus including the same, and production method thereof
JP2008130724A (en) * 2006-11-20 2008-06-05 Toyota Central R&D Labs Inc Semiconductor device
US7548825B2 (en) * 2006-01-13 2009-06-16 Infineon Technologies Ag Method and apparatus for current and temperature measurement in an electronic power circuit
US20090167414A1 (en) * 2007-12-26 2009-07-02 Infineon Technologies Ag Temperature detection for a semiconductor component

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6088208A (en) * 1997-03-31 2000-07-11 Matsushita Electronics Corporation Electronic device, electronic switching apparatus including the same, and production method thereof
US6060792A (en) * 1997-05-20 2000-05-09 International Rectifier Corp. Instantaneous junction temperature detection
US7548825B2 (en) * 2006-01-13 2009-06-16 Infineon Technologies Ag Method and apparatus for current and temperature measurement in an electronic power circuit
JP2008130724A (en) * 2006-11-20 2008-06-05 Toyota Central R&D Labs Inc Semiconductor device
US20090167414A1 (en) * 2007-12-26 2009-07-02 Infineon Technologies Ag Temperature detection for a semiconductor component

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
FARJAH E ET AL: "Application and analysis of thermosensitive parameters in the case of hybrid power modules", INDUSTRY APPLICATIONS SOCIETY ANNUAL MEETING, 1994., CONFERENCE RECORD OF THE 1994 IEEE DENVER, CO, USA 2-6 OCT. 1994, NEW YORK, NY, USA,IEEE, 2 October 1994 (1994-10-02), pages 1284 - 1289, XP010124234, ISBN: 978-0-7803-1993-6, DOI: 10.1109/IAS.1994.377584 *

Also Published As

Publication number Publication date
HRP20110689A2 (en) 2013-03-31
WO2013045960A2 (en) 2013-04-04
HRP20110689B1 (en) 2016-05-20

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