WO2011161775A1

WO2011161775A1 - Electron beam excited light-emitting device

Info

Publication number: WO2011161775A1
Application number: PCT/JP2010/060601
Authority: WO
Inventors: 宏治中原; 朋信土屋; 慎榊原; 滋久田中
Original assignee: 株式会社日立製作所
Priority date: 2010-06-23
Filing date: 2010-06-23
Publication date: 2011-12-29
Also published as: JPWO2011161775A1; JP5383912B2

Abstract

There has been a problem that if an insulating film or the like is disposed to improve the characteristics of a conventional electron beam excited semiconductor laser or LED device, the characteristics of the device are degraded because charge-up caused by an electron beam occurs. In a semiconductor laser comprising nitride semiconductor layers (2, 3, 4, 5) formed on a sapphire substrate, an insulating film (6) and a metal film (7) are stacked and provided beside a ridge stripe structure (5). The metal film (7) is connected to a power supply (13), the voltage of which is set to greater than an accelerating voltage of -Vd and less than or equal to the ground voltage of 0V. Upper and lower n-clad layers (2, 4) are connected through electrodes (8, 9) to the ground.

Description

Electron beam excitation light emitting device

The present invention relates to an electron beam excitation type semiconductor light emitting device.

In recent years, research and development of GaN-based nitride semiconductor light-emitting elements that emit light from the ultraviolet region to blue have been actively conducted. Already from blue-violet (wavelength 410 nm) to the near ultraviolet region (wavelength 375 nm vicinity) has been put into practical use. In a nitride semiconductor light emitting device, the light emission efficiency is drastically lowered in the region where the light emission wavelength is 360 nm or less, and only a few percent of light emission efficiency is obtained particularly in the 200-300 nm band wavelength in the deep ultraviolet region. It was an issue.

One cause of low luminous efficiency in the ultraviolet region of nitride semiconductors is a decrease in the p-type activation rate in AlGaN and AlN semiconductors with high Al compositions. When the Al composition is several percent, the AlGaN p-type activation rate is about several percent to several tens percent. However, in reality, the activation rate when the Al composition is about 50% or more is 0.1% or less. This is because the acceptor level increases as the Al composition increases.

As a solution to this problem, Patent Document 1 discloses a light source device including an electron beam excitation type semiconductor layer. FIG. 6 of Patent Document 1 discloses a stripe semiconductor laser excited by an electron beam. In FIG. 6 of

Patent Document

1, 11 is a semiconductor substrate, 12 and 13 are semiconductor layers forming a cladding layer, 14 is a semiconductor layer forming an active layer, 15 is a semiconductor layer forming a cap layer, and 16 is a part of the cap layer 15. A stripe-shaped ridge formed on the substrate, 17 is an insulator, and 18 is a thin-film metal layer forming a thin-film electrode. The semiconductor layers 12 to 15 are sequentially stacked on the semiconductor substrate 11 in an epitaxial manner.

JP-A-8-162720

In the structure of Patent Document 1, a metal film is formed only on the upper surface of the ridge portion, and no metal film is formed on the insulating film on the side surface of the ridge and the bottom surface of the ridge groove (the lower surface beside the ridge).

The present inventors made a prototype of the electron beam excitation light emitting device of Patent Document 1, but the electron injection efficiency was extremely low. As a result of analysis, it was found that when an insulating film is used on the ridge side surface and the ridge groove bottom surface, a charge-up phenomenon occurs in the insulating film, resulting in a decrease in electron injection efficiency.

An object of the present invention is to improve the electron injection efficiency of an electron beam excitation light emitting device.

In order to solve the above problems, the present inventor has devised a structure in which an insulating film is disposed on the side surface of the mesa groove and the bottom surface of the mesa groove, and further, a metal film is formed over the entire surface. However, although this structure was prototyped and evaluated, the electron injection efficiency did not improve as expected. This is because the metal film is also on the mesa upper surface and the mesa side surface, so that the electron beam level irradiated from the electron beam source is weakened before reaching the active layer in the semiconductor layer. It is done.

Therefore, the present inventors do not provide a metal film on the entire surface of the semiconductor layer on the electron beam source side, but provide an insulating film on the semiconductor layer without providing a metal film in a region where an electron beam without an insulating film is injected. A metal film was partially provided only in the region. And the electron source was arrange | positioned in the position where an electron beam is irradiated with respect to the semiconductor region exposed from the insulating film and the metal film. By adopting such a structure, an electron beam excitation light emitting device with high electron injection efficiency can be realized.

In particular, on the side of the stripe of the structure in which the semiconductor layer sandwiched between the DBR mirror or the cleavage plane is thicker than other regions and the planar pattern is in a stripe shape (so-called ridge type, semiconductor resonant structure called mesa type). It is efficient to have a structure in which the metal film is formed through an insulating film.

According to the present invention, it is possible to realize high-efficiency light emission of an electron beam excitation type light emitting device in which a semiconductor layer emits light by excitation with an electron beam.

1 is a cross-sectional view of an electron beam excitation laser device of Example 1. FIG. 1 is a bird's-eye schematic view of a laser emission unit of an electron beam excitation laser device according to Embodiment 1. FIG. FIG. 6 is a cross-sectional view of a modification of the electron beam excitation laser device according to the second embodiment. 6 is a cross-sectional view of an electron beam excitation laser device according to Example 3. FIG. 6 is a bird's-eye schematic view of a laser emission unit of an electron beam excitation laser device according to Example 4. FIG. FIG. 6 is a cross-sectional view of an electron beam excitation laser device according to a fifth embodiment. FIG. 6 is a cross-sectional view of an electron beam excitation laser device according to a sixth embodiment. 12 is a schematic bird's-eye view of an electron beam excitation laser apparatus according to Example 7. FIG. 10 is a schematic cross-sectional view of a photonic crystal hole region in an electron beam excitation laser device of Example 7. FIG. It is sectional drawing of the electron beam excitation light-emitting device stored in the vacuum container with a window.

Example 1 is an electron beam excitation laser device that emits light in the deep ultraviolet region. This is an example of an electron beam excitation type light emitting device having a resonance structure. FIG. 1 is a cross-sectional view (cross-section in the stripe direction of the ridge stripe structure 5) of the electron beam excitation laser apparatus of Example 1. FIG. FIG. 2 is a bird's-eye schematic view of a laser light emitting unit of the electron beam excitation laser device according to the first embodiment.

Reference numeral 1 denotes a sapphire substrate, 2 denotes a lower n-type AlGaN cladding layer having an impurity concentration of 1 × 10 ¹⁸ cm ⁻³ including an AlN buffer layer as a dopant, and 3 denotes an undoped structure including an n-type Al (Ga) N guide layer An AlGaN-quantum well active layer, 4 is an upper n-type AlGaN cladding layer using Si with an impurity concentration of 1 × 10 ¹⁸ cm ⁻³ as a dopant, and 5 has a ridge stripe structure (Low Mesa structure).

The lower n-type AlGaN cladding layer 2, the undoped AlGaN-quantum well active layer 3, the upper n-type AlGaN cladding layer 4 and the ridge stripe structure (Low Mesa structure) 5 are formed on the sapphire substrate 1 by MOCVD (Metal-Organic Chemical Vapor Deposition). ) Method to form a semiconductor stacked body, and dry etching is performed using a striped mask. The cross-section of the ridge stripe structure 5 is a rectangle with the width of the top surface of the ridge of 3 μm and the ridge height of 300 nm. Although not shown, these semiconductor layers have a structure sandwiched between DBR mirrors or cleavage planes.

6 is an insulating film is composed of silicon dioxide SiO _2, is placed aside ridge stripe, in contact with the ridge stripe side. The thickness of the insulating film 6 is 100 nm, which is half or less of the ridge height. The insulating film 6 may have the same height as the ridge stripe structure 5.

7 is an electrode in which a three-layer metal film made of Ti / Pt / Au is laminated on the insulating film 6. Instead of providing a metal film on the entire surface of the semiconductor layer, a metal film is not provided in a region without an insulating film for injecting an electron beam, and a metal film is provided only in a region having an insulating film on the semiconductor layer. Then, the electrons charged in the insulating film 6 flow through the electrode 7 to prevent the insulating film 6 from being charged up.

8 is an electrode composed of a four-layer metal film made of Ti / Al / Ti / Au for making ohmic contact with the four upper n-type AlGaN cladding layers.

9 is an electrode composed of a four-layer metal film made of Ti / Al / Ti / Au or Ti / Al / Mo / Au for making ohmic contact with the lower n-type AlGaN clad layer 5.

In Example 1, 0V is supplied to the

electrodes

8 and 9. That is, the

electrodes

8 and 9 are grounded.

The

electrodes

8 and 9 are in ohmic contact with the semiconductor layer and grounded. As a result, electrons are injected into the ridge stripe without delay. Although wide band gap semiconductors such as nitride semiconductors have a large band gap, there is a concern that even semiconductors may be charged up. However, in our trial results, the semiconductor is doped and the above electrodes are formed by ohmic contact. The structure with the electrode grounded did not charge up.

10 is an electron beam source. The electron beam source 10 is made of barium oxide that emits thermoelectrons, and is arranged at a position where the electron beam is irradiated from the upper surface of the semiconductor layer exposed from the insulating film 6 and the electrode 7.

11 is a vacuum vessel, which is composed of a glass tube on which a gettering material for keeping the degree of vacuum is deposited.

12 is a voltage source for accelerating electrons. The voltage Vd from the voltage source 12 was set in the range of -10V to -20kV.

13 is a power source for applying a voltage Vg to the metal film 7, and the voltage was set in a range larger than Vd and lower than a ground voltage (0V). Even if the voltage Vg is not applied, the charge-up of the insulating film 6 is suppressed, but by applying the voltage Vg, the charge-up of the insulating film 6 is efficiently and stably suppressed.

Electrons e from the electron beam source 10 are generally emitted radially. Therefore, the electrons e are injected not only into the ridge stripe as the thick film portion but also into the side of the ridge stripe (the bottom surface of the ridge groove) as the thin film portion. Further, since the electrons e injected into the ridge stripe structure 5 emit secondary electrons, the electrons e are scattered around the electrons. In the absence of the metal film 7, electrons e are emitted to the insulating film 6 around the ridge stripe structure 5, so that the insulating film 6 is charged up. When charged up, since the insulating film 6 is positively charged, the electrons e traveling toward the ridge stripe structure 5 are bent and are not normally injected into the ridge stripe structure 5, and the electron injection efficiency is lowered. In addition, when the metal film 7 is present on the entire surface, the problem of charge-up does not occur, but the amount of electrons injected into the ridge stripe structure 5 itself decreases, so that the electron injection efficiency eventually decreases.

The semiconductor laser of Example 1 was able to realize low current laser oscillation with an oscillation wavelength of 260 nm, an output of 5 mW, and a drive current of 6 mA under conditions of room temperature and voltage Vd = −10 kV to the electron source. In addition, a stable operation was obtained for 500 hours in an APC (Auto Power Control) test.

FIG. 3 is a cross-sectional view (a cross section in the stripe direction of the ridge stripe structure 5) of a laser light emitting portion of an electron beam excitation laser device which is a modification of the first embodiment. The difference from the first embodiment is that the insulating film 6 is formed higher than the ridge stripe structure 5.

Further, in Example 2, the electrode 7 has a planar layout with no gap between the side surface of the ridge stripe 5 like the insulating film 6 in contact with the side surface of the ridge stripe. This is because the insulating film 6 is formed higher than the ridge stripe structure 5, so that the electrode 7 does not contact the side surface of the ridge stripe, and a leak current is generated due to the voltage difference between the electrode 7 and the semiconductor 1-5. Because there is no.

In the case of this Example 2, electrons could be successfully drawn into the ridge stripe structure 5 by setting Vg to an appropriate value between Vd and the ground voltage of 0V.

Example 3 is an electron beam excitation laser that emits light in the deep ultraviolet region. This is an example of an electron beam excitation type light emitting device having a resonance structure. FIG. 4 is a cross-sectional view of the electron beam excitation laser device of Example 3 (cross-section in the stripe direction of the ridge stripe structure 5). The difference from FIG. 1 is that the insulating film 6 and the metal film 7 are arranged away from the ridge stripe structure 5.

Here, we discuss the penetration length at which accelerated electrons enter the semiconductor. The intrusion length of materials is formulated based on empirical rules. Kanaya and S. Made by Okayama, Journal of Physics D: Applied Physics Vol. 5, 43 (1972). When calculated from the average atomic weight and density, for example, at an acceleration voltage of −10 kV, the scattering center depth in the material of electrons in GaN and AlN was about 0.2 μm, and the maximum penetration depth was about 0.6 μm. Electrons reach the vicinity of the maximum penetration depth, but most electron-hole pairs are formed at the scattering center. The height of the ridge is limited in order to reduce the height in order to guide light. Therefore, as shown in FIG. 4, the insulating film 6 and the metal film 7 are arranged apart from the ridge stripe structure 5 and electrons are injected from the side of the ridge, so that electron-hole pairs can be efficiently generated in the active layer.

Furthermore, in the semiconductor laser of Example 3, the electrode 7 was further away from the ridge stripe structure 5 than the insulating film 6 to increase the gap. This has the merit that the leakage current when the voltage difference between the electrode 7 and the semiconductor 1-5 is high can be reduced, and the process margin at the time of manufacturing is increased.

In addition, the semiconductor laser of Example 3 was able to realize laser oscillation with a low current of an oscillation wavelength of 255 nm, an output of 5 mW, and a driving current of 3 mA under the conditions of room temperature and voltage Vd = −10 kV to the electron source. In addition, a stable operation was obtained for 800 hours in an APC (Auto Power Control) test.

In this embodiment, the insulating film 6 is lower than the height of the ridge stripe structure 5 as shown in FIG.

FIG. 5 is a cross-sectional view (a cross section in the stripe direction of the ridge stripe structure 5) of a laser light emitting portion of an electron beam excitation laser device which is a modification of the third embodiment. The difference from Example 3 is that the insulating film 6 is formed higher than the ridge stripe structure 5 and that the electrode 7 protrudes from the insulating film 6 to the ridge stripe 5 side. This protrusion is stopped at the gap between the ridge stripe structure 5 and the insulating film 6.

Since the insulating film 6 is formed higher than the ridge stripe structure 5, there is an advantage that electrons are drawn by applying an appropriate Vg and highly efficient electron injection is performed. Further, since the electrode 7 protrudes into the gap between the ridge stripe structure 5 and the insulating film 6, the advantage that the electron injection to the side of the ridge stripe, which is the effect in the embodiment 3, can be controlled by the protrusion length is obtained. Yes.

In Example 4, Vg was set to an appropriate value between Vd and the ground voltage of 0V. As a result, electrons can be satisfactorily drawn into the ridge stripe structure 5.

<Alternative>
Each layer of Example 1 to Example 4 is an example, and their alternatives are shown below.

In each of the above-described embodiments, the sapphire substrate 1 is used as a substrate on which a nitride semiconductor is crystal-grown, but the same effect can be obtained by using an AlN substrate. In this case, the AlN substrate may be semi-insulating or conductive with a dopant introduced. In the case of a conductive substrate, electrodes are also formed on the back side of the substrate.

In each of the embodiments described above, since the

AlGaN cladding layers

2 and 4 are doped with Si as a dopant and become an n-type semiconductor layer, there is an advantage that the activation rate is hardly changed by the injection of electrons e. The p-type semiconductor layer may be formed by doping Mg into a nitride semiconductor. The impurity concentration of these p-type or n-type dopants is preferably in the range of 7 × 10 ¹⁶ to 3 × 10 ¹⁹ cm ⁻³ .

In each of the embodiments described above, the material composition of the ridge stripe structure 5 is the same as that of the upper n-type AlGaN cladding, but an edge stop layer made of a material having a different etching rate is interposed from the viewpoint of mesa height reproducibility. You may let them. In the example described above, the ridge stripe structure 5 has a rectangular cross section, but may have a trapezoidal shape or an inverted trapezoidal shape. The optimum range of dimensions of the ridge stripe structure 5 is a ridge width of 1 to 30 μm and a height of 100 to 800 nm.

The insulating film 6 uses not only silicon dioxide as in the above-described embodiments, but also other Si oxides or nitrides, Al oxides or nitrides, ZrO ₂ , WO ₃ , TiSiN, and HfO ₂ . be able to.

In each of the above-described embodiments, the electron beam source 10 is composed of barium oxide that emits thermoelectrons, but tungsten or carbon nanotubes can be used.

In each of the above-described embodiments, the vacuum vessel 11 is composed of a glass tube on which a gettering material that maintains the degree of vacuum is deposited, but may be composed of a metal vessel.

Example 5 is an electron beam excitation surface emitting laser that emits light in the deep ultraviolet region. This is an example of an electron beam excitation type light emitting device having a resonance structure. FIG. 6 is a schematic cross-sectional view of only the light emitting portion, and the electron beam source 10, the vacuum vessel 11, and the power supplies 12 and 13 other than the light emitting portion have the same configuration as FIG.

In FIG. 6, 101 is an n-type AlN substrate, and 102 is an n-type semiconductor DBR layer. In this DBR layer, n-type AlN layers 102a and n-type AlGaN layers 102b are alternately stacked with a layer thickness of λ / 4n. Here, λ is the oscillation wavelength, and n is the refractive index of the layer. Reference numeral 103 denotes an n-InGaAlN spacer layer, 104 denotes an InGaAlN quantum well active layer, and 105 denotes an n-InGaAlN spacer layer. 103 to 105 form a resonator structure corresponding to a film thickness of λ / n. 106 is an n-type AlN layer, 109 is an n-type semiconductor DBR layer, and is composed of an n-type AlN layer and an n-type AlGaN layer as in the lower layer. 107 is an insulating film, 108 is a metal film, and the metal film 108 is connected to a voltage corresponding to Vg in FIG. Reference numeral 110 denotes an n-type ohmic electrode layer, which is grounded to 0V. Although not shown in the drawing, the n-type AlN layer 106 is also in ohmic contact with the n-type electrode at a position away from the light emitting portion, and is grounded to 0V.

In Example 5, as in Example 1, since electrons easily reach the active layer 104 by injecting electrons into the region where the n-type AlN layer 106 at the top of the substrate in FIG. 6 is exposed, surface emission is efficiently performed. The laser can oscillate. Furthermore, since the current region is defined by the insulating film 106 and the charge-up of the insulating film can be suppressed by 108, the deterioration of the laser characteristics due to the charge-up can be suppressed.

In Example 5, a surface emitting laser oscillated at a threshold current of 0.5 mA by injecting electrons accelerated at a voltage of −5 kV. The oscillation wavelength at this time was 290 nm.

Note that only the lower part of the AlN substrate 101 comes out of the vacuum vessel, and the central part of the n-electrode 110 is open, and laser light can be taken out from this opening.

Example 6 is an electron beam excitation embedded laser that emits light in the deep ultraviolet region. This is an example of an electron beam excitation type light emitting device having a resonance structure. FIG. 7 is a schematic cross-sectional view of only the light emitting portion, and the electron beam source 10, the vacuum vessel 11, and the

power sources

12 and 13 depicted in FIG. In FIG. 7, 16 is an AlN substrate, 2 is a lower AlGaN cladding layer including an AlN buffer layer, 3 is an AlGaN-quantum well active layer including an Al (Ga) N guide layer, and 4 is an upper AlGaN cladding layer. As in Example 1, the upper and lower AlGaN cladding layers are doped n-type.

Reference numerals

6 and 7 denote an insulating layer and a metal film layer having an AlGaN cladding layer as an opening, and the metal film layer is connected to a power source and kept at a voltage of Vg as in the first embodiment. 14 is a semi-insulating AlN buried layer, and 15 is an n-type ohmic electrode. Electrons from above are irradiated onto the upper clad 4, but since the surrounding region is covered with the metal film layer 7 maintained at a voltage of Vg, electrons are stably applied to the upper clad 4 without being charged up. Is injected.

The semiconductor laser according to Example 6 was confirmed to oscillate with a low current of 20 mA at a voltage of −20 kV to the electron source at room temperature. The oscillation wavelength was 278 nm, and stable operation was obtained for 200 hours in a 3 mW APC (Auto Power Control) test.

Example 7 is an LED that emits light in the deep ultraviolet region. This is an example of an electron beam excitation type light emitting device having a resonance structure. FIG. 8 is a schematic bird's-eye view, and FIG. 9 is a cross-sectional view of the photonic crystal hole region therein. FIGS. 8 and 9 are schematic views of only the light emitting section. The electron beam source 10, the vacuum vessel 11, and the power supplies 12 and 13 depicted in FIG. 1 may be the same as those in the first embodiment. 8 and 9, 1 is a sapphire substrate, 2 is a lower n-type AlGaN cladding layer including an AlN buffer layer, 3 is an AlGaN-quantum well active layer including an Al (Ga) N guide layer, and 4 is an upper n-type AlGaN cladding layer. It is.

111 is an undoped semiconductor DBR layer comprising an undoped AlN layer and an undoped AlGaN layer.

112 is a metal film layer in which photonic crystal holes are opened, and 113 is an opening portion of the photonic crystal structure.

As in Example 1, the upper n-type cladding layer and the lower n-type cladding layer are grounded to 0 V using an ohmic contact electrode at a location away from the electron beam injection portion. Electrons come from above the substrate and are injected into the semiconductor layers 3 and 4 through the holes in the photonic crystal.

Here, since 112 is connected to a power source and is maintained at a voltage of Vg, the photonic crystal portion and the DBR layer portion can be stably operated with high efficiency without being charged up.

The light from the active layer is reflected downward by the photonic crystal part and the DBR layer part and emitted to the sapphire substrate side.

The LED of this example emitted light with a central wavelength of 245 nm, and its maximum light output was 24 mW. In a reliability test at a constant light output of 12 mW, stable characteristics were obtained after 4000 hours. In this embodiment, the DBR layer 111 is undoped. However, a similar effect can be obtained even in a structure in which a dielectric film equivalent to a thickness of λ / 4n is inserted between the metal film layer using an n-type doped DBR layer. can get. The same effect can be obtained even when the DBR layer is formed of a dielectric film.

(Common subject matter)
Although all of Examples 1 to 7 have described nitride semiconductors as semiconductors, other semiconductors such as InGaAsP and InGaAlAs that can be grown on an InP substrate, or InGaAlP and AlGaAs that can be grown on GaAs, can be similarly applied. Yes. The same applies to II-VI group semiconductors such as ZeSe and CdZnSe.

Examples 1, 2, and 4 describe an example of an edge emitting laser. However, a highly reflective coating film is applied only to one side of the end face, and the opposite side of the stripe waveguide is bent to reflect the reflectance. It can be similarly applied to a super luminescence diode having a non-reflective coating film.

FIG. 10 is a cross-sectional view of an electron beam excitation light-emitting device stored in a vacuum container with a window. In the case of Examples 1 to 4 and 6, as shown in FIG. 10, it is necessary to form 115 ultraviolet transmissive windows in a part of the vacuum vessel and to emit ultraviolet light out of the vacuum vessel 11. In FIG. 10, reference numeral 114 denotes the semiconductor laser which is the light emitting portion described in the first to fourth and sixth embodiments.

DESCRIPTION OF SYMBOLS 1 ... Sapphire substrate 2 ... Lower AlGaN cladding layer 3 including AlN buffer layer 3 ... AlGaN-quantum well active layer 4 including Al (Ga) N guide layer ... Upper AlGaN cladding layer 5 ... Ridge structure 6 ... Insulating layer 7 ... Metal film Layer 8 ... Ohmic electrode layer 9 for upper cladding layer ... Ohmic electrode layer 10 for lower cladding layer ... Electron beam source 11 ... Vacuum vessel 12 ... Power source 13 ... Power source 14 ... Semi-insulating AlN buried layer 15 ... n-type ohmic electrode layer

Claims

A semiconductor laminate including an active layer;
An insulating film partially provided so as to have an opening on the semiconductor laminate;
A metal film provided on the insulating film;
An electron beam excitation type light emitting device comprising: an electron beam source that irradiates an electron beam to a semiconductor laminate exposed from the metal film.
In claim 1,
The semiconductor stacked body includes an n-type conductive semiconductor layer sandwiching the active layer, and an electron beam excitation light emitting device.
In claim 2,
An electron beam excitation light-emitting device, wherein a grounded ohmic electrode is provided on the n-type conductive semiconductor layer.
In claim 1,
The semiconductor laminate includes a mesa whose cross section is partially convex, and the mesa is located in the opening of the insulating film,
An electron beam excitation light-emitting device, wherein electrons are irradiated on the upper surface of the mesa.
In claim 4,
An electron beam excitation light emitting device, wherein the metal film is formed on the side of the mesa with a space therebetween.
In claim 4,
The mesa is composed of a semiconductor stacked body in an upper layer than the active layer, and is an electron beam excitation light emitting device.
In claim 4,
The mesa structure comprises a planar pattern of long stripes in a first direction;
An electron beam excitation type light emitting device configured to resonate in the first direction.
In claim 1,
An electron beam excitation light-emitting device, wherein a part of the semiconductor laminate is a nitride semiconductor.
In claim 1,
The semiconductor stacked body is a surface-emitting laser in which the active layer is sandwiched between upper and lower reflecting mirrors.
In claim 1,
An electron beam excited light emitting device comprising a DBR reflecting mirror and a photonic crystal structure formed on the DBR reflecting mirror on an active layer.