Nothing Special   »   [go: up one dir, main page]

WO2011038550A1 - 一种发光二极管节能灯 - Google Patents

一种发光二极管节能灯 Download PDF

Info

Publication number
WO2011038550A1
WO2011038550A1 PCT/CN2009/074337 CN2009074337W WO2011038550A1 WO 2011038550 A1 WO2011038550 A1 WO 2011038550A1 CN 2009074337 W CN2009074337 W CN 2009074337W WO 2011038550 A1 WO2011038550 A1 WO 2011038550A1
Authority
WO
WIPO (PCT)
Prior art keywords
led
metal
conductive layer
energy
saving lamp
Prior art date
Application number
PCT/CN2009/074337
Other languages
English (en)
French (fr)
Inventor
霍为民
Original Assignee
Huo Weimin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huo Weimin filed Critical Huo Weimin
Priority to PCT/CN2009/074337 priority Critical patent/WO2011038550A1/zh
Priority to US13/383,517 priority patent/US20120113630A1/en
Priority to EP09849958A priority patent/EP2484969A1/en
Publication of WO2011038550A1 publication Critical patent/WO2011038550A1/zh

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/40—Details of LED load circuits
    • H05B45/44—Details of LED load circuits with an active control inside an LED matrix
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/502—Cooling arrangements characterised by the adaptation for cooling of specific components
    • F21V29/507—Cooling arrangements characterised by the adaptation for cooling of specific components of means for protecting lighting devices from damage, e.g. housings
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V3/00—Globes; Bowls; Cover glasses
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2107/00—Light sources with three-dimensionally disposed light-generating elements
    • F21Y2107/20—Light sources with three-dimensionally disposed light-generating elements on convex supports or substrates, e.g. on the outer surface of spheres
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

Definitions

  • the present invention relates to an illumination lamp, and more particularly to an LED energy-saving lamp.
  • LED energy-saving lamps because their luminous efficiency is higher than that of tungsten lamps and ordinary energy-saving lamps, compared with ordinary energy-saving lamps, because it does not contain mercury, and the theoretical life is several times that of ordinary energy-saving lamps, it is generally considered to be the next generation.
  • Electric light source due to the light decay and the service life of the light-emitting diode of the light-emitting diode of the light-emitting diode energy-saving lamp, the photoelectric conversion efficiency of the existing light-emitting diode crystal chip is about 25% to 35%. Between 65% and 75% of the electric energy is converted into heat energy.
  • the existing LED energy-saving lamps are all implemented by mounting the LED device on a circuit board or by arranging the LED chip on the circuit board to form a power supply circuit.
  • the circuit board shown in FIG. 1A is composed of a metal conductive layer 90 and an insulating substrate 60. Since the heat conduction efficiency of the insulating substrate 92 is low, the heat generated by the LED chip during operation is difficult to be quickly exported, resulting in a light-emitting diode crystal chip. The junction temperature rises to the extent that it affects its useful life.
  • the circuit board 1B is composed of a metal conductive layer 90, an insulating layer 60 and a metal substrate 91.
  • the heat conduction efficiency of such a circuit board is high, the thickness of the metal substrate of the circuit board generally does not exceed 2 mm.
  • the heat capacity is low, so a metal heat sink needs to be connected in use to increase the heat dissipation effect.
  • the junction between the bottom surface of the metal substrate and the surface of the metal heat sink reduces the heat transfer efficiency. Since the circuit board is flat, it is difficult to meet the requirements of the non-planar light-emitting surface of some of the lamp bodies.
  • the present invention is directed to solving the above problems, and provides a method of mounting an LED device on a metal conductive layer.
  • the metal conductive layer is disposed on the metal heat sink with the insulating layer mounted on the metal heat sink, and the metal conductive layer is divided into mutually independent metal conductive layers according to the requirements of the power supply circuit constituting the light emitting diode device to form the power supply circuit of the photodiode device. .
  • an LED energy-saving lamp which comprises: an energy-saving lamp housing Body, light-emitting diode component, power supply, wherein: the light-emitting diode component 10 is electrically connected to the metal conductive layer 30 and the energy-saving lamp power supply 20 to form a power supply circuit of the light-emitting diode component;
  • the light emitting diode device 10 is a packaged light emitting diode ⁇
  • the light emitting diode is mounted on the metal conductive layer 30 by soldering or welding;
  • the LED crystal chip is disposed on the metal conductive layer 30;
  • the other side of the metal conductive layer 30 with the heat dissipating surface of the light emitting diode device 10 is provided with an insulating layer 50, and the other side of the insulating layer 50 is provided with a heat sink 40;
  • a transparent protective paste 60 is provided on the LED chip.
  • the light-emitting diode energy-saving lamp when the light-emitting diode component 10 is a packaged light-emitting diode ⁇ , the combination of the light-emitting diode and the metal conductive layer 30, the heat-emitting diode internally has a heat conduction of the light-emitting diode crystal chip
  • the terminal 111 is mounted on the metal-conducting layer 300, and the metal-conducting layer 300 electrically conducts the corresponding electrode of the energy-saving lamp power supply 20; the other end 112 of the LED is mounted on the metal-conducting layer 301, and is electrically connected to the metal-conducting layer 301.
  • the other electrode of the energy-saving lamp power supply 20; the insulating layer 60 is disposed between the metal-conducting layer 300 and the metal-conducting layer 301 and the metal heat sink 40, and thus forms a power supply circuit for the LED.
  • the metal conductive layer 30 of the LED chip is divided into mutually independent metal conductive layers according to the requirements of the power supply circuit of the LED chip.
  • 300, divided metal conductive layer 301; LED crystal chip and metal heat sink 30, energy-saving lamp power supply 20 constitutes a light-emitting diode power supply circuit;
  • the metal conductive layer 30 of the LED chip is divided into mutually independent metal conductive layers 300 according to the requirements of the power supply circuit of the LED chip.
  • the metal conductive layer 301 and the metal conductive layer 302 are divided; the LED crystal chip and the metal heat sink 30, and the energy-saving lamp power supply 20 constitute a power supply circuit for the LED device.
  • An LED energy-saving lamp, the heat sink 40 thereof is required for pre-fabricating an LED energy-saving lamp
  • the metal body to be shaped, the insulating layer 50 and the metal conductive layer 30 are mounted thereon.
  • a light-emitting diode energy-saving lamp which has a surface of the metal conductive layer 30 of the LED chip, which is a reflective surface, and the reflective surface is polished.
  • the light-emitting diode energy-saving lamp has a surface of the metal conductive layer 30 of the LED chip which is a reflective surface, and a reflective material such as silver which has light on the reflective surface.
  • the light-emitting diode energy-saving lamp has a reflective surface which is a surface required for design, such as one of a plane, a paraboloid, a cone, and a sphere, or a combination of more than one.
  • An LED energy-saving lamp which is prefabricated into a metal body heat sink 40 of a shape required for an LED energy-saving lamp, an insulating layer 50 and a metal conductive layer 30 are mounted thereon, and a transparent protective adhesive 60 is provided. At the light-emitting opening of the heat sink 40, the insulating layer 50, the metal conductive layer 30, and the light-emitting diode crystal chip are covered.
  • the contribution of the present invention is that it effectively solves the problem that the existing LED energy-saving lamp mounts the LED device on the circuit board or the LED chip is mounted on the circuit board to form its power supply circuit.
  • the LED crystal chip is disposed on the metal conductive layer constituting the conductive loop of the LED crystal chip, and the metal conductive layer is disposed on the LED light-emitting diode of the insulating layer mounted on the metal conductor heat sink, thereby effectively improving the heat conduction efficiency of the LED.
  • FIG. 1A is a structural view of a composite circuit board directly connected to a metal conductive layer on an insulating substrate;
  • FIG. 1B is a structural view of a composite circuit board through an insulating layer and a metal conductive layer on an insulating substrate;
  • FIG. 2A is a schematic view of a light-emitting diode crystal chip bonded to a metal conductive layer
  • FIG. 2B is a schematic view of a light-emitting diode crystal chip bonded to a metal conductive layer
  • FIG. 3A is a schematic diagram of an implementation of an LED crystal chip of the present invention applied to a metal conductive layer
  • FIG. 3B is a schematic view showing an implementation manner of an LED mounted on a metal conductive layer according to the present invention.
  • FIG. 4 is a circuit schematic diagram of an implementation of FIG. 3;
  • FIG. 5 is a schematic diagram of an implementation of an LED chip of the present invention for a metal conductive layer.
  • FIG. 6 is a circuit schematic diagram of an implementation of FIG. 5; 7A is a schematic structural view of a reflective surface of the present invention.
  • FIG. 7B is a schematic view showing the outer shape of a reflective surface of the present invention.
  • FIG. 8A is a schematic structural view of a reflective surface of the present invention being non-planar
  • FIG. 8B is a schematic view showing the outer shape of a reflective surface of the present invention.
  • FIG. 9 is a schematic view of a light emitting diode mounted on a metal conductive layer.
  • An LED energy-saving lamp of the present invention is configured by mounting an LED device 10 on a metal conductive layer 30 constituting a power supply circuit of a light-emitting diode device, and an insulating layer is disposed between the metal conductive layer 30 and the metal conductor heat sink 40. 60 constitutes.
  • the metal conductive layer 30 is divided into a metal conductive layer 300 and a metal conductive layer 301, both of which are Electrical insulation.
  • the heat dissipating surface 103 of the LED chip is disposed on the metal-conducting layer 300 of the metal conductive layer 30.
  • the sub-metal conductive layer 300 electrically conducts the corresponding electrode of the energy-saving lamp power supply 20.
  • the light emitting surface of the LED crystal chip is provided with a light emitting diode electrode wire 101, and the electrode wire 101 is connected to another metal conductive layer 301, and the metal conductive layer 301 electrically conducts the other electrode of the energy saving lamp power supply 20;
  • An insulating layer 60 is disposed between the device 40 and the sub-metal conductive layers 300, 301, and thereby forms a power supply loop for the LED chip.
  • the metal conductive layer 30 is divided into a metal conductive layer 300, a metal conductive layer 301, and a metal conductive layer. 302, electrical insulation between the three.
  • the heat dissipating surface 103 of the LED crystal chip is disposed on the metal-conducting layer 300, and the sub-metal conductive layer 300 is not electrically connected to the electrode of the energy-saving lamp power supply 20.
  • the two electrodes of the LED chip are respectively provided with an electrode lead 101 and an electrode lead 102.
  • the electrode lead 101 and the electrode lead 102 are respectively connected to the metal conductive layer 301, and the metal conductive layer 301 is divided into three.
  • the metal conductive layer 302 is electrically connected to the corresponding electrode of the energy-saving lamp power supply 20; the insulating layer 60 is disposed between the metal conductive layer 30 0, the metal conductive layer 301, the metal conductive layer 302 and the metal heat sink 40, and The pair of LED crystal chips constitute a power supply loop.
  • the heat-dissipating surface of the light-emitting diode is bound to the metal conductive layer 30.
  • the two electrodes of the light-emitting diode are respectively provided with an electrode 111, an electrode 112. electrode 111.
  • the electrodes 112 are electrically connected to the metal-clad conductive layer 300 and the metal-clad conductive layer 301, respectively.
  • the sub-metal conductive layer 300 and the sub-metal conductive layer 301 are respectively connected to the electrodes of the energy-saving lamp power supply 20 .
  • An insulating layer 60 is disposed between the sub-metal conductive layer 300, the sub-metal conductive layer 301, and the metal heat sink 40.
  • the electrode 111 and the electrode 112 of the light emitting diode may be connected and fixed to the metal-conducting conductive layers 300 and 301 by soldering or welding, respectively.
  • the insulating layer 60 can be made of an insulating layer material of a common metal substrate circuit board insulating layer, and the metal conductive layer 30 can be made of a conductive metal of a metal conductive layer of a general metal substrate circuit board. Foil.
  • the mounting method can use the same process of pressing the metal conductive layer and the insulating layer on the metal substrate by hot pressing in the production process of the general metal substrate circuit board.
  • the same method as the circuit board etching process can be used, and the whole metal foil is etched into several independents according to requirements.
  • Conductive layer is used for the metal conductive layer to be divided into several independent conductive layers according to the requirements of the power supply circuit for forming the light-emitting diode device.
  • the metal substrate circuit board is made of a standard metal substrate circuit board, and the circuit is formed by an etching process, and then cut into a finished circuit board of a shape and size. Since the thickness of the metal substrate is standard, it is generally from 1.0 to 2.0 mm and is a standard flat panel. In the prior art, when the heat dissipation needs to increase the thickness, only the metal heat sink can be connected, and the heat resistance is increased at the connection, and the heat dissipation efficiency is reduced. It is also difficult to do when a non-planar luminescent surface is required. The method we can take is based on the heat dissipation requirements and the requirements of the light-emitting surface. Firstly, a metal heat sink suitable for the required thickness and shape is fabricated, and then the surface of the surface is crimped or bonded with an insulating layer and a metal conductive layer.
  • the metal conductive layer is etched out to the corresponding line according to the requirements of the power supply circuit, so that the foregoing problem can be solved.
  • the metal-plated conductive layer 300 is connected to one electrode of the energy-saving lamp power supply 20, and the plurality of LED crystal chips 10 are disposed on the metal conductive layer 300.
  • the light-emitting diode crystal chip 10 is provided on the light-emitting surface.
  • the LED electrode wire 101 is fixed, and the other end of the LED electrode wire 101 is connected to the metal-conducting layer 301, and the other electrode of the power-saving lamp power supply is connected to the metal-conducting layer 301, and the metal-conducting layer 300 is electrically conductive.
  • An insulating layer 60 is mounted between the layer 301 and the metal heat sink 40, thereby forming a parallel power supply circuit of the circuit schematic shown in FIG.
  • the metal-conducting layer 300 is connected to one electrode of the energy-saving lamp power supply 20, and the heat-extracting end electrodes of the plurality of LEDs 10 are mounted on the metal-conducting layer 300.
  • the other end electrode of the LED 10 is mounted on the metal-conducting layer 301, and the other electrode of the energy-saving lamp power supply 20 is connected to the metal-conducting layer 301, and the metal-conducting layer 300, the metal-conducting layer 301 and the metal heat sink are disposed.
  • 40 between An insulating layer 60 is provided, thereby forming a parallel power supply circuit of the circuit schematic shown in FIG.
  • the metal-plated conductive layer 300 is connected to one electrode of the energy-saving lamp power supply 20, and the plurality of LED crystal chips 10 are disposed on the metal conductive layer 300, and the light-emitting diode crystal chip 10 is connected on the light-emitting surface.
  • the light-emitting diode electrode wire 101 is connected to the adjacent one of the metal-conducting layer 300, and the plurality of light-emitting diode crystal chips 10 are also disposed on the metal-conducting layer 300;
  • the other end of the electrode lead 101 of the LED chip 10 on the metal-plated conductive layer 300 of the plurality of LED crystal chips 10 is bonded to the metal-conducting layer 301, and the metal-conducting layer 301 is connected.
  • Energy-saving lamp power supply 20 another electrode.
  • An insulating layer 60 is mounted between the sub-metal conductive layer 300, the sub-metal conductive layer 301, and the metal heat sink 40, thereby constituting a series-parallel power supply circuit of the circuit schematic shown in FIG.
  • the surface of the metal conductive layer 30 on which the light-emitting diode or the LED chip is mounted constitutes a reflective surface 80 for reflecting light emitted by the light-emitting diode or the LED chip.
  • Reflective efficiency, reflective surface 80 can be polished, or treated with good reflective materials such as silver and nickel.
  • the metal heat sink 40 constitutes a part of the energy-saving lamp housing, and the metal heat sink 40 exposed to the energy-saving lamp housing can further improve the heat dissipation efficiency. It can be seen that the metal heat sink 40 can be various shapes such as a non-planar cylinder, a cone, a paraboloid, a spherical body, and the like.
  • the reflective surface 80 is formed on the surface of the metal conductive layer 30, and the light emitting diode member 10 and the insulating layer 60 are covered by the transparent protective adhesive 50. It is used to protect the LED chip and the LED electrode lead, and derive the transparent light guide that emits light from the LED chip.
  • the reflective surface of the metal conductive layer 30 is a flat surface.
  • the reflective surface 80 of the metal conductive layer 30 can be designed as one of a non-planar plane, a paraboloid, a cone, a curved surface, or a spherical surface, or a More than one combination.
  • the metal heat sink 30 is prefabricated into a metal body such as a cone, a sphere, a cylinder, a paraboloid, a rectangular parallelepiped, and the like.

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)

Description

说明书
Title of Invention:一种发光二极管节能灯
[1] 技术领域
[2] 本发明涉及照明灯， 特别是涉及一种发光二极管节能灯。
[3] 背景技术
[4] 发光二极管节能灯因为其发光效率高于钨丝灯和普通节能灯， 相较于普通节能 灯因为它不含汞， 且理论寿命数倍于普通节能灯， 而被普遍认为是下一代的电 光源。 但是由于发光二极管节能灯的发光器件发光二极管晶体芯片的光衰和使 用寿命对其在工作吋的芯片结点温度非常敏感， 现有的发光二极管晶体芯片光 电转换效率约为 25%至 35%之间， 65%至 75%的电能会转化为热能， 因此发光二 极管节能灯的发光二极管晶体芯片散热效率成为发光二极管节能灯保障使用寿 命和实用化的关键所在。 现有的发光二极管节能灯均釆用将发光二极管器件安 装于电路板上或将发光二极管晶体芯片帮定在电路板上以构成其供电回路来实 现的。 如图 1A所示的电路板由金属导电层 90和绝缘基板 60构成， 由于绝缘基板 9 2的导热效率较低， 发光二极管晶体芯片在工作吋产生的热量因此难于快速导出 ， 致使发光二极管晶体芯片结点温度升高至影响其使用寿命的程度。 如图 1B所 示的电路板由金属导电层 90、 绝缘层 60和金属基板 91构成，这种电路板的导热效 率虽然较高， 但是由于此种电路板的金属基板厚度一般不会超过 2mm， 热容较 低， 因此在使用中还需要连接有金属散热器以增加散热效果。 在金属基板底面 和金属散热器表面之间连接处会降低导热效率。 同吋因为电路板是平面的， 难 于适合部分灯体的非平面发光面的要求。
[5] 发明内容
[6] 本发明旨在解决上述问题， 而提供的一种将发光二极管件安装于金属导电层上
， 金属导电层介于绝缘层安装在金属散热器上的发光二极管节能灯， 其金属导 电层是根据构成发光二极管件供电回路的要求分为相互独立的金属导电层， 以 构成光二极管件供电回路。
[7] 本发明目的通过以下技术实现， 一种发光二极管节能灯， 它包括： 节能灯外壳 体、 发光二极管件、 供电电源， 其中： 发光二极管件 10与金属导电层 30、 节能 灯供电电源 20相互电连接， 构成发光二极管件供电回路；
[8] 当发光二极管件 10为已封装的发光二极管吋， 发光二极管通过焊接或熔接方式 安装于金属导电层 30上；
[9] 当发光二极管件为裸片发光二极管晶体芯片吋， 发光二极管晶体芯片帮定于金 属导电层 30上； 及
[10] 与发光二极管件 10散热面帮定的金属导电层 30的另一面， 设有绝缘层 50， 绝缘 层 50的另一面设有散热器 40;
[11] 发光二极管晶体芯片上设有透明保护胶 60。
[12] 所述的一种发光二极管节能灯， 当发光二极管件 10为已封装的发光二极管吋， 发光二极管与金属导电层 30的结合为， 发光二极管内部帮定有发光二极管晶体 芯片的热导出端 111安装于分金属导电层 300上， 分金属导电层 300电导通节能灯 供电电源 20的相应电极； 发光二极管的另一端 112安装于分金属导电层 301上， 并分金属导电层 301电导通节能灯供电电源 20的另一个电极； 分金属导电层 300 和分金属导电层 301与金属散热器 40之间设有绝缘层 60， 并由此对发光二极管构 成供电回路。
[13] 所述的一种发光二极管节能灯， 当发光二极管件 10为裸片发光二极管晶体芯片 吋， 发光二极管晶体芯片的散热面 100直接帮定在金属散热器 30上；
[14] 若发光二极管晶体芯片的散热面 100为某一电极， 帮定有发光二极管晶体芯片 的金属导电层 30， 根据构成发光二极管晶体芯片供电回路的要求， 分为相互独 立的分金属导电层 300、 分金属导电层 301 ; 发光二极管晶体芯片与金属散热器 3 0、 节能灯供电电源 20构成发光二极管件供电回路；
[15] 若发光二极管晶体芯片的散热面 100不为电极， 帮定有发光二极管晶体芯片的 金属导电层 30， 根据构成发光二极管晶体芯片供电回路的要求， 分为相互独立 的分金属导电层 300、 分金属导电层 301、 分金属导电层 302; 发光二极管晶体芯 片与金属散热器 30、 节能灯供电电源 20构成发光二极管件供电回路。
[16] 所述的一种发光二极管节能灯， 其散热器 40为热的良导体金属。
[17] 所述的一种发光二极管节能灯， 其散热器 40， 是预制成发光二极管节能灯所需 要外形的金属体， 绝缘层 50和金属导电层 30安装在其上。
[18] 所述的一种发光二极管节能灯， 其散热器 40)， 它的厚度大于 2.5mm。
[19] 所述的一种发光二极管节能灯， 其帮定有发光二极管晶体芯片的金属导电层 30 的面为反光面， 反光面经抛光处理。
[20] 所述的一种发光二极管节能灯， 其帮定有发光二极管晶体芯片的金属导电层 30 的面为反光面， 反光面上渡有光的良反射材料， 如银。
[21] 所述的一种发光二极管节能灯， 其反光面为设计需要的面， 如平面、 抛物面、 锥面、 球面中的一种， 或一种以上的结合。
[22] 所述的一种发光二极管节能灯， 其预制成发光二极管节能灯所需要外形的金属 体的散热器 40， 绝缘层 50和金属导电层 30安装在其上， 透明保护胶 60设在散热 器 40的发光口处， 将绝缘层 50、 金属导电层 30及发光二极管晶体芯片都覆盖。
[23] 本发明的贡献在于， 它有效解决了现有的发光二极管节能灯将发光二极管器件 安装于电路板上或将发光二极管晶体芯片帮定在电路板上以构成其供电回路而 造成的发光二极管导热效率低的问题。 将发光二极管晶体芯片帮定于构成发光 二极管晶体芯片导电回路的金属导电层上， 金属导电层介于绝缘层安装在金属 导体散热器上的发光二极管节能灯， 有效的提高发光二极管的导热效率。
[24] 附图说明
[25] 图 1A是绝缘基板上直接与金属导电层复合电路板的结构图；
[26] 图 1B是绝缘基板上通过绝缘层与金属导电层复合电路板的结构图；
[27] 图 2A是一种发光二极管晶体芯片帮定于金属导电层的示意图；
[28] 图 2B是一种发光二极管晶体芯片帮定于金属导电层的示意图；
[29] 图 3A是本发明的一种发光二极管晶体芯片帮定于金属导电层实现方式的示意图
[30] 图 3B是本发明的一种发光二极管安装于金属导电层实现方式的示意图；
[31] 图 4是图 3的一种实现方式的电路原理图；
[32] 图 5是本发明的一种发光二极管晶体芯片帮定于金属导电层实现方式的示意图
[33] 图 6是图 5的一种实现方式的电路原理图； [34] 图 7A是本发明的一种反光面为平面的结构示意图；
[35] 图 7B是本发明的一种反光面为平面的外形结构示意图；
[36] 图 8 A是本发明的一种反光面为非平面的结构示意图；
[37] 图 8B是本发明的一种反光面为非平面的外形结构示意图；
[38] 图 9是一种发光二极管安装于金属导电层的示意图。
[39] 具体实施方式
[40] 本发明一种发光二极管节能灯， 通过将发光二极管件 10安装于构成发光二极管 件供电回路的金属导电层 30上， 并金属导电层 30与金属导体散热器 40之间设有 绝缘层 60而构成。
[41] 如图 2A所示， 当发光二极管件 10为发光二极管晶体芯片， 并其散热面 103为电 极吋， 金属导电层 30分为分金属导电层 300和分金属导电层 301， 两者之间电绝 缘。 发光二极管晶体芯片的散热面 103帮定于金属导电层 30的分金属导电层 300 上， 该分金属导电层 300电导通节能灯供电电源 20的相应电极。 发光二极管晶体 芯片的发光表面设有发光二极管电极导线 101， 电极导线 101与另一分金属导电 层 301相连接， 并该分金属导电层 301电导通节能灯供电电源 20的另一个电极； 金属散热器 40与分金属导电层 300、 301之间设有绝缘层 60， 并由此对发光二极 管晶体芯片构成供电回路。
[42] 如图 2B所示， 当发光二极管件 10为发光二极管晶体芯片的散热面 103不为电极 吋， 金属导电层 30分为分金属导电层 300、 分金属导电层 301和分金属导电层 302 ， 三者之间电绝缘。 发光二极管晶体芯片的散热面 103帮定于分金属导电层 300 上， 该分金属导电层 300与节能灯供电电源 20的电极不电导通。 发光二极管晶体 芯片的两个电极分别设有电极导线 101、 电极导线 102， 电极导线 101、 电极导线 102分别与分金属导电层 301分金属导电层、 302相连接， 并分金属导电层 301、 分金属导电层 302分别与节能灯供电电源 20的相应电极电导通； 分金属导电层 30 0、 分金属导电层 301、 分金属导电层 302与金属散热器 40之间设有绝缘层 60， 并 由此对发光二极管晶体芯片构成供电回路。
[43] 如图 9所示， 当发光二极管件 10为已封装发光二极管吋， 发光二极管的散热面 帮定于金属导电层 30上.发光二极管的两个电极分别设有电极 111、 电极 112.电极 111、 电极 112分别与分金属导电层 300及分金属导电层 301电连接。 分金属导电 层 300及分金属导电层 301分别接节能灯供电电源 20的电极。 分金属导电层 300、 分金属导电层 301与金属散热器 40之间设有绝缘层 60。 发光二极管的电极 111、 电极 112可以通过焊接或熔接的方式，分别与分金属导电层 300、 301连接并固定。
[44] 如图 2A、 2B、 9所示， 绝缘层 60可以釆用一般常用金属基板电路板绝缘层的绝 缘层材料， 金属导电层 30可以釆用一般金属基板电路板金属导电层的导电金属 箔。 其安装方法可以釆用一般金属基板电路板生产过程中将金属导电层和绝缘 层通过热压方式压接在金属基板上相同的工艺。 对于金属导电层根据构成发光 二极管件供电回路的要求分为数个独立的导电层的制作方法， 可以釆用与电路 板刻蚀工艺相同方式， 依据要求将整片的金属箔刻蚀成数个独立的导电层。
[45] 金属基板电路板是釆用标准金属基板电路板板材， 通过刻蚀工艺制作出线路， 再切割成需要形状和大小成品电路板。 由于金属基板的厚度是标准的， 一般在 1. 0至 2.0mm，且是标准平面板。 现有技术中， 当散热需要增加厚度吋， 就只能连接 金属散热器， 在连接吋会增加热阻， 降低散热效率。 当需要非平面发光表面吋 ， 也难以做到。 我们釆取的方式能够依据散热要求和发光面要求， 先加工出适 合要求厚度和形状的金属散热器， 再在其表面压接或粘接绝缘层和金属导电层
， 最后再根据供电回路的要求将金属导电层刻蚀出相应的线路， 这样就可以解 决前述问题。
[46] 如图 3A所示， 分金属导电层 300连接有节能灯供电电源 20的一个电极， 多个发 光二极管晶体芯片 10帮定于金属导电层 300上； 发光二极管晶体芯片 10发光表面 上帮定有发光二极管电极导线 101， 发光二极管电极导线 101另一端与分金属导 电层 301相连接， 并分金属导电层 301连接有节能灯供电电源另一个电极， 在分 金属导电层 300、 分金属导电层 301和金属散热器 40之间安装有绝缘层 60， 由此 构成如图 4所示的电路原理图的并联供电回路。
[47] 如图 3B所示， 分金属导电层 300连接有节能灯供电电源 20的一个电极， 多个发 光二极管 10的热导出端电极安装于分金属导电层 300上。 发光二极管 10的另一端 电极安装于分金属导电层 301上， 并分金属导电层 301连接有节能灯供电电源 20 的另一个电极， 在分金属导电层 300、 分金属导电层 301和金属散热器 40之间安 装有绝缘层 60， 由此构成如图 4所示的电路原理图的并联供电回路。
[48] 如图 5所示， 分金属导电层 300连接有节能灯供电电源 20的一个电极， 多个发光 二极管晶体芯片 10帮定于金属导电层 300上， 发光二极管晶体芯片 10发光表面上 连接有发光二极管电极导线 101， 发光二极管电极导线 101另一端连接于相邻的 一个分金属导电层 300上， 该分金属导电层 300上也帮定有多个发光二极管晶体 芯片 10; 并重复多个如此连接， 帮定于多个发光二极管晶体芯片 10的分金属导 电层 300上的发光二极管晶体芯片 10的电极导线 101的另一端帮定于分金属导电 层 301上， 分金属导电层 301连接有节能灯供电电源 20另一个电极。 在分金属导 电层 300、 分金属导电层 301和金属散热器 40之间安装有绝缘层 60， 由此构成如 图 6所示的电路原理图的串并联供电回路。
[49] 如图 7A所示， 安装有发光二极管或者帮定有发光二极管晶体芯片的金属导电层 30的表面构成反光面 80， 用于反射发光二极管或者发光二极管晶体芯片所发出 的光， 为提高反射效率， 反光面 80可以经过抛光处理， 或者电镀银、 镍等良好 反光材料处理。
[50] 如图 7B所示金属散热器 40构成了节能灯壳体的一部分， 裸露于节能灯壳体的金 属散热器 40可以进一步提高散热效率。 由此可知金属散热器 40可以是非平面的 柱体、 锥形体、 抛物面体、 球面体， 等各种形状。
[51] 如图 7A、 7B所示， 在金属导电层 30的表面构成反光面 80、 发光二极管件 10、 绝缘层 60被透明保护胶 50所覆盖。 它是用于保护发光二极管晶体芯片和发光二 极管电极导线， 导出发光二极管晶体芯片所发光的透明导光体。
[52] 如图 7A、 7B所示， 金属导电层 30的反光面为平面。 如图 8A、 8B所示， 为满足 节能灯的反光面总体要求， 金属导电层 30的反光面 80可以设计为非平面的平面 、 抛物面、 锥面、 弧面、 球面中的一种， 或一种以上的结合。 为满足如上设计 要求金属散热器 30预制成发光二极管节能灯所需要外形的金属体， 如锥体、 球 体、 柱体、 抛物体、 长方体， 等各种外形。
[53] 如前述各单元所用器件均可釆用常规器件。
[54] 尽管通过以上实施例对本发明进行了揭示， 但是本发明的范围并不局限于此， 在不偏离本发明构思的条件下， 以上各构件可用所属技术领域人员了解的相似 或等同元件来替换。

Claims

权利要求书
[Claim 1] 1、 一种发光二极管节能灯， 它包括： 节能灯外壳体、 发光二极管 件、 供电电源， 其特征在于：
发光二极管件 （10) 与金属导电层 (30)、 节能灯供电电源 (20)相互 电连接， 构成发光二极管件供电回路；
当发光二极管件 （10) 为已封装的发光二极管吋， 发光二极管通 过焊接或熔接方式安装于金属导电层 (30)上； 当发光二极管件为裸片发光二极管晶体芯片吋， 发光二极管晶体 芯片帮定于金属导电层 (30)上； 及
与发光二极管件 (10)散热面帮定的金属导电层 (30)的另一面， 设有 绝缘层 (50)， 绝缘层 (50)的另一面设有散热器 (40);
发光二极管晶体芯片上设有透明保护胶 (60)。
[Claim 2] 2、 如权利要求 1所述的一种发光二极管节能灯， 其特征在于， 当 发光二极管件 （10) 为已封装的发光二极管吋， 发光二极管与金 属导电层 (30)的结合为， 发光二极管内部帮定有发光二极管晶体芯 片的热导出端 (111)安装于分金属导电层 (300)上， 分金属导电层 (30 0)电导通节能灯供电电源 (20)的相应电极； 发光二极管的另一端 (1 12)安装于分金属导电层 (301)上， 并分金属导电层 (301)电导通节能 灯供电电源 (20)的另一个电极； 分金属导电层 (300)和分金属导电 层 (301)与金属散热器 (40)之间设有绝缘层 (60)， 并由此对发光二极 管构成供电回路。
[Claim 3] 3、 如权利要求 1所述的一种发光二极管节能灯， 其特征在于， 当 发光二极管件 (10)为裸片发光二极管晶体芯片吋， 发光二极管晶体 芯片的散热面 （100) 直接帮定在金属散热器 (30)上；
若发光二极管晶体芯片的散热面 （100) 为某一电极， 帮定有发光 二极管晶体芯片的金属导电层 (30)， 根据构成发光二极管晶体芯片 供电回路的要求， 分为相互独立的分金属导电层 (300)、 分金属导 电层 (301) ; 发光二极管晶体芯片与金属散热器 (30)、 节能灯供电 电源 （20) 构成发光二极管件供电回路；
若发光二极管晶体芯片的散热面 （100) 不为电极， 帮定有发光二 极管晶体芯片的金属导电层 (30)， 根据构成发光二极管晶体芯片供 电回路的要求， 分为相互独立的分金属导电层 (300)、 分金属导电 层 (301)、 分金属导电层 (302) ; 发光二极管晶体芯片与金属散热器 ( 30)、 节能灯供电电源 （20) 构成发光二极管件供电回路。
4、 如权利要求 1或 2或 3所述的一种发光二极管节能灯， 其特征在 于， 所述的散热器 (40)为热的良导体金属。
5、 如权利要求 1或 2或 3所述的一种发光二极管节能灯， 其特征在 于， 所述的散热器 (40)， 是预制成发光二极管节能灯所需要外形 的金属体， 绝缘层 (50)和金属导电层 (30)安装在其上。
6、 如权利要求 1所述的一种发光二极管节能灯， 其特征在于， 所 述的散热器 (40)， 它的厚度大于 2.5mm。
7、 如权利要求 1或 2或 3所述的一种发光二极管节能灯， 其特征在 于， 所述帮定有发光二极管晶体芯片的金属导电层 (30)的面为反光 面， 反光面经抛光处理。
8、 如权利要求 1或 2或 3所述的一种发光二极管节能灯， 其特征在 于， 所述帮定有发光二极管晶体芯片的金属导电层 (30)的面为反光 面， 反光面上渡有光的良反射材料， 如银。
9、 如权利要求 7所述的一种发光二极管节能灯， 其特征在于， 所 述的反光面为设计需要的面， 如平面、 抛物面、 锥面、 球面中的 一种， 或一种以上的结合。
10、 如权利要求 5所述的一种发光二极管节能灯， 其特征在于， 所 述的预制成发光二极管节能灯所需要外形的金属体的散热器 (40)， 绝缘层 (50)和金属导电层 (30)安装在其上， 透明保护胶 (60)设在散 热器 (40)的发光口处， 将绝缘层 (50)、 金属导电层 (30)及发光二极 管晶体芯片都覆盖。
PCT/CN2009/074337 2009-09-30 2009-09-30 一种发光二极管节能灯 WO2011038550A1 (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/CN2009/074337 WO2011038550A1 (zh) 2009-09-30 2009-09-30 一种发光二极管节能灯
US13/383,517 US20120113630A1 (en) 2009-09-30 2009-09-30 Led energy-saving lamp
EP09849958A EP2484969A1 (en) 2009-09-30 2009-09-30 Led energy-saving lamp

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2009/074337 WO2011038550A1 (zh) 2009-09-30 2009-09-30 一种发光二极管节能灯

Publications (1)

Publication Number Publication Date
WO2011038550A1 true WO2011038550A1 (zh) 2011-04-07

Family

ID=43825495

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2009/074337 WO2011038550A1 (zh) 2009-09-30 2009-09-30 一种发光二极管节能灯

Country Status (3)

Country Link
US (1) US20120113630A1 (zh)
EP (1) EP2484969A1 (zh)
WO (1) WO2011038550A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9605821B2 (en) * 2014-11-19 2017-03-28 GE Lighting Solutions, LLC Outdoor LED luminaire with plastic housing
JP6728676B2 (ja) * 2015-12-26 2020-07-22 日亜化学工業株式会社 発光装置
KR101801195B1 (ko) 2017-06-15 2017-11-27 디비라이텍 주식회사 조명모듈 제조방법 및 이에 의하여 제조되는 조명모듈
DE102017130008A1 (de) * 2017-12-14 2019-06-19 Siteco Beleuchtungstechnik Gmbh Led-bauteil mit kachelartigem muster von kontaktflächen

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5857767A (en) * 1996-09-23 1999-01-12 Relume Corporation Thermal management system for L.E.D. arrays
US6428189B1 (en) * 2000-03-31 2002-08-06 Relume Corporation L.E.D. thermal management
CN200965178Y (zh) * 2006-10-20 2007-10-24 南京汉德森科技股份有限公司 大功率led交通信号灯
CN200982607Y (zh) * 2006-11-02 2007-11-28 王建州 Led灯的散热结构
CN201028446Y (zh) * 2007-02-16 2008-02-27 官有占 一种led照明灯具的导热构造

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200722677A (en) * 2005-12-09 2007-06-16 Wen-Chin Shiau Heat dissipation structure for blaze flashlight
US20070267642A1 (en) * 2006-05-16 2007-11-22 Luminus Devices, Inc. Light-emitting devices and methods for manufacturing the same
US7527397B2 (en) * 2006-09-26 2009-05-05 Chia-Mao Li Solid state lighting package structure
US7588351B2 (en) * 2007-09-27 2009-09-15 Osram Sylvania Inc. LED lamp with heat sink optic
US8476812B2 (en) * 2009-07-07 2013-07-02 Cree, Inc. Solid state lighting device with improved heatsink

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5857767A (en) * 1996-09-23 1999-01-12 Relume Corporation Thermal management system for L.E.D. arrays
US6428189B1 (en) * 2000-03-31 2002-08-06 Relume Corporation L.E.D. thermal management
CN200965178Y (zh) * 2006-10-20 2007-10-24 南京汉德森科技股份有限公司 大功率led交通信号灯
CN200982607Y (zh) * 2006-11-02 2007-11-28 王建州 Led灯的散热结构
CN201028446Y (zh) * 2007-02-16 2008-02-27 官有占 一种led照明灯具的导热构造

Also Published As

Publication number Publication date
EP2484969A1 (en) 2012-08-08
US20120113630A1 (en) 2012-05-10

Similar Documents

Publication Publication Date Title
JP5290101B2 (ja) 複数個の予備のはんだパッドを備えてワイヤボンディングの歩留りを高める発光ダイオードの実装構造とその製造方法
CN201187696Y (zh) Led照明阵列的柔性线路板
JP5082083B2 (ja) Ｌｅｄ照明装置
WO2009094829A1 (en) A high heat dissipation led light source module and a high heat dissipation and high power led light source assembly
WO2013086794A1 (zh) 柔性电路基板led二维阵列光源
JP2008293966A (ja) 発光ダイオードランプ
CN101614333A (zh) 高效散热led照明光源及制造方法
TW200806921A (en) Light emitting diode lighting module with improved heat dissipation structure
WO2011057433A1 (zh) 发光二极管灯条及其制作方法、发光二极管灯管
WO2013139295A1 (zh) 具有强散热能力的发光二极管球泡灯及其制造方法
WO2013067945A1 (zh) 发光二极管灯芯和采用发光二极管作为光源的照明装置
JP3168522U (ja) 発光ダイオード散熱装置
TWI447975B (zh) 發光二極體晶片之結構、發光二極體封裝基板之結構、發光二極體封裝結構及其製法
WO2011038550A1 (zh) 一种发光二极管节能灯
US9748462B2 (en) Floating heat sink support with conductive sheets and LED package assembly for LED flip chip package
JP5131668B2 (ja) Ｌｅｄ照明装置
CN102593317B (zh) 一种高功率高亮度led光源封装结构及其封装方法
TW201349577A (zh) 照明裝置
JP5558930B2 (ja) Ｌｅｄ素子の放熱構造
CN201412705Y (zh) 高效散热led照明光源
KR101248607B1 (ko) 열우물을 이용한 방열구조를 가지는 led 어레이 모듈
WO2011038552A1 (zh) 一种具有良好散热器功能的发光二极管节能灯
CN202159663U (zh) 大功率led厚膜集成面光源
JP2010287749A (ja) 発光体および照明器具
WO2013097314A1 (zh) 无电路基板led阵列光源

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09849958

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 13383517

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2009849958

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE