WO2011034335A2

WO2011034335A2 - Plasma-processing apparatus

Info

Publication number: WO2011034335A2
Application number: PCT/KR2010/006289
Authority: WO
Inventors: 허승회
Original assignee: 주성엔지니어링(주)
Priority date: 2009-09-18
Filing date: 2010-09-15
Publication date: 2011-03-24
Also published as: WO2011034335A3

Abstract

The present invention relates to a plasma-processing apparatus capable of making the concentration of plasma generated within a plasma reaction space of a chamber uniform in order to form a uniform thin film on a substrate, wherein the plasma-processing apparatus comprises: said chamber providing the reaction space; a substrate-supporting member installed inside the chamber, for supporting a substrate; an upper electrode installed inside the chamber to face the substrate-supporting member, for being supplied with high-frequency power and process gas; a ground member installed so as to be electrically grounded at an upper portion of the upper electrode; and a plurality of reactance members electrically connected between each edge portion of the upper electrode and the ground member, for increasingly distributing current applied to each edge portion of the upper electrode.

Description

Plasma processing equipment

The present invention relates to a plasma processing apparatus, and more particularly, to a plasma processing apparatus capable of forming a uniform thin film on a substrate by making the plasma density generated between the plasma reaction spaces of the chamber uniform.

In general, the plasma processing apparatus includes a plasma enhanced chemical vapor deposition (PECVD) apparatus for thin film deposition, an etching apparatus for etching and patterning the deposited thin film, a sputter, and an ashing apparatus. The plasma processing apparatus may be classified into a capacitively coupled plasma (CCP) method and an inductively coupled plasma (ICP) method according to an RF power application method.

The capacitively coupled type is a method of generating a plasma using an electric field formed between the electrodes by applying RF power to the parallel plate electrodes facing each other, the inductively coupled plasma type is a source using an induction electric field induced by an antenna This is how the material is transformed into plasma.

1 is a view for schematically explaining a conventional capacitively coupled plasma type plasma processing apparatus.

Referring to FIG. 1, a typical capacitively coupled plasma processing apparatus includes a chamber 10; Chamber lid 20; A substrate support member 30; Upper electrode 40; Insulation member 50; Ground plate 60; A high frequency power supply unit 70; And a gas supply unit 80.

The chamber 10 provides a closed plasma reaction space for the plasma processing process.

The chamber lead 20 is installed to cover the upper portion of the chamber 10 to support the upper electrode 40, the insulating member 50, and the ground plate 60.

The substrate support member 30 is installed in the chamber 10 to support the substrate S. The substrate support member 30 constitutes a lower electrode opposite to the upper electrode 40.

The upper electrode 40 is supported by the chamber lid 20 so as to face the substrate support member 30 so that high frequency power is supplied from the high frequency power supply 70, and process gas is supplied from the gas supply 80.

In the upper portion of the upper electrode 40, a feed rod 74 electrically connected to the feed line 72 of the high frequency power supply unit 70 is provided, and a gas supply pipe 82 to which the process gas is supplied is provided.

A gas storage space 42 for storing the process gas supplied through the gas supply pipe 82 is formed inside the upper electrode 40.

A plurality of gas injection holes 44 for injecting the process gas stored in the gas storage space 42 into the plasma reaction space are formed below the upper electrode 40.

The upper electrode 40 injects the process gas stored in the gas storage space 42 into the plasma reaction space according to the driving of the gas supply unit 80, and generates an electric field through the high frequency power supplied from the high frequency power supply unit 70. By generating the excitation of the process gas injected between the plasma reaction space to generate a plasma between the plasma reaction space.

The insulating member 50 is installed between the chamber lead 20 and the upper electrode 40 to insulate the upper electrode 40.

The ground plate 60 is supported by the chamber lead 20 to have a gap Gap of a predetermined height with the upper electrode 40 and is grounded to the chamber lead 20.

The high frequency power supply unit 70 generates high frequency power having a predetermined frequency and supplies the high frequency power to the upper electrode 40 through the feed line 72 and the feed rod 74. The feed rod 74 penetrates through the chamber lid 20 and the ground plate 60 and is electrically connected to the central portion of the upper electrode 40. At this time, an insulating material is formed in the central portions of each of the chamber lead 20 and the ground plate 60 through which the feed rod 74 passes.

The gas supply unit 80 supplies a process gas for forming a thin film on the substrate S through the gas supply pipe 82 to the gas storage space 42 of the upper electrode 40.

In the plasma processing apparatus as described above, the substrate S is seated on the substrate support member 30, and then a process gas is injected between the plasma reaction spaces and high frequency power is applied to the upper electrode 40 to make the plasma reaction spaces. The thin film is formed on the substrate S by exciting the process gas.

However, in the conventional plasma processing apparatus, the high frequency power is applied to the center portion of the upper electrode 40 so that the high frequency power is delayed in the process of supplying the high frequency power from the center portion of the upper electrode 40 to the edge portion (each corner portion). Due to this, there is a problem in that a standing wave effect occurs on a frequency of high frequency power. Due to the standing wave effect, as shown in FIG. 2, the intensity of the electric field decreases from the center portion of the plasma reaction space toward the edge portion, thereby causing high frequency power to be unevenly applied to the center portion and the edge portion of the plasma reaction space. have. Due to this problem, the plasma density generated between the plasma reaction spaces is high in the center portion but low in the edge portion, resulting in non-uniformity, making it impossible to form a uniform thin film on the substrate S.

The non-uniformity of the plasma density is a problem that is further intensified when the plasma reaction space increases due to the large area of the substrate (S).

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problem, and it is a technical object of the present invention to provide a plasma processing apparatus that enables uniform plasma density generated between plasma reaction spaces of a chamber to form a uniform thin film on a substrate. .

According to an aspect of the present invention, there is provided a plasma processing apparatus, including: a chamber providing a plasma reaction space; A substrate support member installed in the chamber to support a substrate; An upper electrode installed inside the chamber so as to face the substrate support member and to which high frequency power and process gas are supplied; A grounding member installed on the upper electrode to be electrically grounded; And a plurality of reactance members electrically connected between the upper electrode and each edge portion of the ground member to increase a current distribution applied to each edge portion of the upper electrode.

According to an aspect of the present invention, there is provided a plasma processing apparatus, including: a chamber providing a plasma reaction space; A substrate support member installed in the chamber to support a substrate; An upper electrode installed inside the chamber so as to face the substrate support member and to which high frequency power and process gas are supplied; A grounding member installed on the upper electrode to be electrically grounded; And a parallel LC circuit that is equivalently connected in parallel between the upper electrode and each edge portion of the ground member.

Wherein said parallel LC circuit comprises a plurality of reactance members in which a positive reactance element and a negative reactance element are alternately connected between said upper electrode and each edge portion of said ground member. It is done.

The negative reactance element is a capacitor, and the positive reactance element is an inductor.

The plurality of reactance members may include: a first reactance element electrically connected between the upper electrode and the first edge portion of the ground member; A second reactance element electrically connected between the upper electrode and the second edge portion of the ground member; A third reactance element electrically connected between the upper electrode corresponding to the diagonal direction of the first edge portion and the third edge portion of the ground member; And a fourth reactance element electrically connected between the upper electrode corresponding to the diagonal direction of the second edge portion and the fourth edge portion of the ground member.

The first to fourth reactance elements may be electrically connected in parallel between the upper electrode and the ground member.

The first reactance element may be made of any one of a capacitor and an inductor.

The capacitor has a negative reactance, and the inductor has a positive reactance.

The plasma processing apparatus further includes a chamber lid installed to cover the upper portion of the chamber, wherein the ground member is the chamber lid.

The plasma processing apparatus includes a chamber lid installed to cover an upper portion of the chamber; And a ground plate installed to be spaced apart from the upper electrode by a predetermined height and grounded to the chamber lead, wherein the ground member is the ground plate.

As described above, the plasma processing apparatus according to the present invention uses a first to fourth reactance element electrically connected in parallel between a ground member, that is, a ground plate (or a chamber lead), and an upper electrode, so that the plasma reaction space may be reduced. A uniform thin film can be formed on a substrate by adjusting the current distribution applied to the edge portion so that high frequency power is applied unevenly between the plasma reaction spaces to make the plasma density uniform.

2 is a view of measuring the intensity of the electric field generated between the plasma reaction space by a general plasma processing apparatus.

3 is a view for explaining a plasma processing apparatus according to a first embodiment of the present invention.

4 is a perspective view for describing a plurality of reactance members illustrated in FIG. 3.

FIG. 5 is a diagram measuring the intensity of an electric field generated between plasma reaction spaces by a plasma processing apparatus according to an exemplary embodiment of the present invention.

6 is a view for explaining a plasma processing apparatus according to a second embodiment of the present invention.

FIG. 7 is a perspective view for describing a plurality of reactance members illustrated in FIG. 6.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a view for explaining a plasma processing apparatus according to a first embodiment of the present invention, Figure 4 is a perspective view for explaining a plurality of reactance (reactance) member shown in FIG.

3 and 4, the plasma processing apparatus according to the first embodiment of the present invention includes a chamber 110; Chamber lid 120; A substrate support member 130; Upper electrode 140; Insulation member 150; Ground plate 160; A high frequency power supply unit 170; Gas supply unit 180; And a plurality of reactance members 190.

The chamber 110 provides a closed plasma reaction space for the plasma processing process.

The chamber lead 120 is installed to cover the upper portion of the chamber 110 to support the upper electrode 140, the insulating member 150, and the ground plate 160.

The substrate support member 130 is installed in the chamber 110 to support the substrate S. In this case, the substrate support member 130 may be a susceptor or an electrostatic chuck. The substrate supporting member 130 constitutes a lower electrode opposite to the upper electrode 140.

The upper electrode 140 is installed inside the chamber 110 so as to face the substrate support member 130 so that high frequency power is supplied from the high frequency power supply unit 170, and a process gas is supplied from the gas supply unit 180. In this case, the upper electrode 140 may be supported by the chamber lead 120 or may be supported by a separate electrode support device (not shown).

A feed rod 174 electrically connected to the high frequency power supply unit 170 through a feed line 172 is installed on the upper electrode 140, and a gas supply pipe 182 to which the process gas is supplied is installed.

The gas storage space 142 for storing the process gas supplied through the gas supply pipe 182 is formed in the upper electrode 140.

A plurality of gas injection holes 144 for injecting the process gas stored in the gas storage space 142 into the plasma reaction space is formed below the upper electrode 140.

The upper electrode 140 injects the process gas stored in the gas storage space 142 into the plasma reaction space according to the driving of the gas supply unit 180, and generates an electric field through the high frequency power supplied from the high frequency power supply unit 170. By generating the excitation of the process gas injected between the plasma reaction space to generate a plasma between the plasma reaction space.

The insulating member 150 is installed between the chamber lead 120 and the upper electrode 140 to insulate the upper electrode 140.

The ground plate 160 is installed on the upper electrode 140 to have a gap Gap of a predetermined height with the upper electrode 140, and is grounded to the chamber lead 120. In this case, the ground plate 160 may be supported by the chamber lead 120 or may be supported by a separate plate support device (not shown).

Meanwhile, the chamber lead 120 and the ground plate 160 serve as ground members for grounding the upper electrode 140 through the plurality of reactance members 190.

The high frequency power supply unit 170 generates high frequency power having a predetermined frequency and supplies the high frequency power to the upper electrode 140 through the feed line 172 and the feed rod 174. The high frequency power supply unit 170 may supply a predetermined high frequency power, for example, a high frequency power of 13.56 MHz to the upper electrode 140, but is not limited thereto. The high frequency power corresponding to the size of the substrate S may be provided. 140 can be supplied.

The feed rod 174 is electrically connected to the central portion of the upper electrode 140 through the chamber lid 120 and the ground plate 160. In this case, an insulating material is formed in the central portions of each of the chamber lead 120 and the ground plate 160 through which the feed rod 174 passes.

The gas supply unit 180 supplies a process gas for forming a thin film on the substrate S through the gas supply pipe 182 to the gas storage space 142 of the upper electrode 140. The process gas may be, for example, a halogen gas, a gas composed of a halogen compound, an oxygen gas, an argon gas, or the like.

As shown in FIG. 4, the plurality of reactance members 190 are electrically connected between the upper electrode 140 and each edge portion of the ground plate 160 to connect the ground plate 160 and the chamber lid 120. The first to fourth reactance elements (Z1, Z2, Z3, Z4) for controlling the current distribution applied to the upper electrode 140 by controlling the ratio of the current flowing to the ground through.

The first reactance element Z1 may be disposed between the lower left edge portion of the upper electrode 140 based on the planar state and the lower left edge portion of the ground plate 160 based on the planar state (hereinafter referred to as “first edge portion”). Is electrically connected). In this case, the first reactance element Z1 may be a capacitor having a negative reactance or an inductor having a positive reactance.

The second reactance element Z2 is referred to as a “second edge portion” between an upper left edge portion of the upper electrode 140 based on the planar state and an upper left edge portion of the ground plate 160 based on the planar state. Is electrically connected). In this case, the second reactance element Z2 may be a capacitor having a negative reactance or an inductor having a positive reactance. Here, when the first reactance element Z1 provided at the first edge portion is formed of a capacitor having a negative reactance, the second reactance element Z2 is formed of an inductor having a positive reactance. On the other hand, when the first reactance element Z1 is formed of an inductor having a positive reactance, the second reactance element Z2 is formed of a capacitor having a negative reactance.

The third reactance element Z3 may be referred to as a “third edge portion” between a right upper edge portion of the upper electrode 140 based on the planar state and a right upper edge portion of the ground plate 160 based on the planar state. Is electrically connected). In this case, the third reactance element Z3 may be a capacitor having a negative reactance or an inductor having a positive reactance. Here, when the second reactance element Z2 is formed of a capacitor having a negative reactance, the third reactance element Z3 is formed of an inductor having a positive reactance. On the other hand, when the second reactance element Z2 is formed of an inductor having a positive reactance, the third reactance element Z3 is formed of a capacitor having a negative reactance. That is, the third reactance element Z3 is made of the same element as the first reactance element Z1, but is made of a different element from the second reactance element Z2.

The fourth reactance element Z4 may be referred to as a “fourth edge portion” between a right bottom edge portion of the upper electrode 140 based on a planar state and a right bottom edge portion of the ground plate 160 based on a planar state. Is electrically connected). In this case, the fourth reactance element Z4 may be a capacitor having a negative reactance or an inductor having a positive reactance. Here, when the third reactance element Z3 is formed of a capacitor having a negative reactance, the fourth reactance element Z4 is formed of an inductor having a positive reactance. On the other hand, when the third reactance element Z3 is made of an inductor having a positive reactance, the fourth reactance element Z4 is made of a capacitor having a negative reactance. That is, the fourth reactance element Z4 is made of the same element as the second reactance element Z2 and is made of a different element from the first reactance element Z1.

As a result, each of the first to fourth reactance elements Z1, Z2, Z3, and Z4 is installed to have positive and negative reactances alternately at each of the first to fourth edge portions. As a result, a parallel LC circuit including first to fourth reactance elements Z1, Z2, Z3, and Z4 connected in parallel to each other is provided between the upper electrode 140 and the ground plate 160.

Each of the first to fourth reactance elements Z1, Z2, Z3, and Z4 imparts a large impedance to high frequency power applied to the upper electrode 140, and thus, the upper electrode (eg, the upper electrode) among the currents distributed between the reaction spaces of the plasma. While reducing the current density distributed in the central portion of the 140, and relatively increases the ratio of the current flowing to the ground through the ground plate 160 and the chamber lid 120. Accordingly, each of the first to fourth reactance elements Z1, Z2, Z3, and Z4 reduces the plasma density generated at the center portion of the plasma reaction space while increasing the plasma density generated at the edge portion of the plasma reaction space. This makes the overall plasma density of the plasma reaction space uniform.

5 is a view of measuring the intensity of the electric field generated between the plasma reaction space by the plasma processing apparatus according to the first embodiment of the present invention.

In FIG. 5, each of the first and third reactance elements Z1 and Z3 illustrated in FIG. 4 is configured as a capacitor having a negative reactance, and each of the second and fourth reactance elements Z2 and Z4 is represented. The inductor has a positive reactance, and the intensity of the electric field generated by the high frequency power applied to the upper electrode 140 is measured.

As can be seen in FIG. 5, as described above, the current density distributed in the central portion of the plasma reaction space is reduced by the first to fourth reactance elements Z1, Z2, Z3, and Z4, and the edge of the plasma reaction space is reduced. It can be seen that the electric field generated in the edge portion of the plasma reaction space is increased by increasing the current density distributed in the portion.

As described above, according to the first embodiment of the present invention, the substrate S is seated on the substrate support member 130, and the high frequency power is applied to the upper electrode 140 while simultaneously spraying the process gas between the plasma reaction spaces. The thin film is formed on the substrate S by exciting the process gas in the plasma reaction space. At this time, the first embodiment of the present invention by using the first to fourth reactance elements (Z1, Z2, Z3, Z4) by adjusting the current distribution applied to the edge portion of the plasma reaction space during plasma discharge to the high-frequency power plasma By non-uniformly applied between the reaction space can improve the problem caused by the standing wave effect (Standing Wave Effect).

Therefore, the first embodiment of the present invention can form a uniform thin film on the substrate by uniformizing the overall plasma density of the plasma reaction space.

Meanwhile, in the plasma processing apparatus according to the first embodiment of the present invention described above, the first to fourth reactance elements Z1, Z2, Z3, and Z4 are disposed between the upper electrode 140 and each edge portion of the ground plate 160. It is electrically connected to and controls the ratio of the current flowing to the ground through the ground plate 160 and the chamber lead 120 to control the current distribution applied to the upper electrode 140. Accordingly, since the first to fourth reactance elements Z1, Z2, Z3, and Z4 may be regarded as being electrically grounded to the chamber lead 120, the above-described ground plate 160 may be omitted, in this case, The first to fourth reactance elements Z1, Z2, Z3, and Z4 are electrically connected between the upper electrode 140 and each edge portion of the chamber lead 120 to provide a current flow to the ground through the chamber lead 120. The ratio may be controlled to control a current distribution applied to the upper electrode 140. The plasma processing apparatus according to the second embodiment of the present invention having the above characteristics will be described in detail as follows.

6 is a view for explaining a plasma processing apparatus according to a second embodiment of the present invention, Figure 7 is a perspective view for explaining a plurality of reactance (reactance) member shown in FIG.

6 and 7, the plasma processing apparatus according to the second embodiment of the present invention includes a chamber 110; Chamber lid 120; A substrate support member 130; Upper electrode 140; Insulation member 150; A high frequency power supply unit 170; Gas supply unit 180; And a plurality of reactance members 290. In the plasma processing apparatus according to the second embodiment of the present invention having the above configuration, the ground plate 160 is omitted in the plasma processing apparatus according to the first embodiment of the present invention. Since it is configured in the same manner as the plasma processing apparatus according to the first embodiment of the present invention, only the plurality of reactance members 290 will be described below, and the rest of the configuration will be replaced with the above description.

The plurality of reactance members 290 are electrically connected between the upper electrode 140 and each edge portion of the chamber lid 120, as shown in FIG. 7, for the flow of current flowing through the chamber lid 120 to ground. The first to fourth reactance elements Z1, Z2, Z3, and Z4 which control the ratio and control the current distribution applied to the upper electrode 140 are included.

The first reactance element Z1 is defined between a lower left edge portion of the upper electrode 140 based on the planar state and a lower left edge portion of the chamber lid 120 based on the planar state (hereinafter referred to as “first edge portion”). Is electrically connected). In this case, the first reactance element Z1 may be a capacitor having a negative reactance or an inductor having a positive reactance.

The second reactance element Z2 may be referred to as a “second edge portion” between an upper left edge portion of the upper electrode 140 based on a planar state and an upper left edge portion of the chamber lid 120 based on a planar state. Is electrically connected). In this case, the second reactance element Z2 may be a capacitor having a negative reactance or an inductor having a positive reactance. Here, when the first reactance element Z1 provided at the first edge portion is formed of a capacitor having a negative reactance, the second reactance element Z2 is formed of an inductor having a positive reactance. On the other hand, when the first reactance element Z1 is made of an inductor having a positive reactance, the second reactance element Z2 is made of a capacitor having a negative reactance.

The third reactance element Z3 is referred to as a “third edge portion” between a right upper edge portion of the upper electrode 140 based on the planar state and a right upper edge portion of the chamber lid 120 based on the planar state. Is electrically connected). In this case, the third reactance element Z3 may be a capacitor having a negative reactance or an inductor having a positive reactance. Here, when the second reactance element Z2 is formed of a capacitor having a negative reactance, the third reactance element Z3 is formed of an inductor having a positive reactance. On the other hand, when the second reactance element Z2 is formed of an inductor having a positive reactance, the third reactance element Z3 is formed of a capacitor having a negative reactance. That is, the third reactance element Z3 is made of the same element as the first reactance element Z1, but is made of a different element from the second reactance element Z2.

The fourth reactance element Z4 may be referred to as a “fourth edge portion” between a right bottom edge portion of the upper electrode 140 and a bottom right edge portion of the chamber lid 120 based on the planar state. Is electrically connected). In this case, the fourth reactance element Z4 may be a capacitor having a negative reactance or an inductor having a positive reactance. Here, when the third reactance element Z3 is formed of a capacitor having a negative reactance, the fourth reactance element Z4 is formed of an inductor having a positive reactance. On the other hand, when the third reactance element Z3 is made of an inductor having a positive reactance, the fourth reactance element Z4 is made of a capacitor having a negative reactance. That is, the fourth reactance element Z4 is made of the same element as the second reactance element Z2 and is made of a different element from the first reactance element Z1.

As a result, each of the first to fourth reactance elements Z1, Z2, Z3, and Z4 is installed to have positive and negative reactances alternately at each of the first to fourth edge portions. As a result, a parallel LC circuit including first to fourth reactance elements Z1, Z2, Z3, and Z4 connected in parallel to each other is provided between the upper electrode 140 and the chamber lead 120.

Each of the first to fourth reactance elements Z1, Z2, Z3, and Z4 imparts a large impedance to high frequency power applied to the upper electrode 140, and thus, the upper electrode (eg, the upper electrode) among the currents distributed between the reaction spaces of the plasma. While reducing the current density distributed in the central portion of the 140, it relatively increases the proportion of current flowing through the chamber lid 120 to ground. Accordingly, each of the first to fourth reactance elements Z1, Z2, Z3, and Z4 reduces the plasma density generated at the center portion of the plasma reaction space while increasing the plasma density generated at the edge portion of the plasma reaction space. This makes the overall plasma density of the plasma reaction space uniform.

In the plasma processing apparatus according to the second embodiment of the present invention, a parallel LC circuit (ie, first to fourth reactance elements) electrically connected between the upper electrode 140 and each edge portion of the chamber lid 120. As can be seen from FIG. 5, the current density distributed in the center portion of the plasma reaction space is reduced, and the current density distributed in the edge portion of the plasma reaction space is increased, thereby generating the electric field generated at the edge portion of the plasma reaction space. It can be seen that is increased.

Therefore, the plasma processing apparatus according to the second embodiment of the present invention can form a uniform thin film on the substrate by uniformizing the overall plasma density of the plasma reaction space, and also the ground plate according to the first embodiment of the present invention. The same effect can be achieved without the need for simplified configuration.

Those skilled in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing the technical spirit or essential features. Therefore, it is to be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is shown by the following claims rather than the above description, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included in the scope of the present invention. do.

Claims

A chamber providing a plasma reaction space;

A substrate support member installed in the chamber to support a substrate;

An upper electrode installed inside the chamber so as to face the substrate support member and to which high frequency power and process gas are supplied;

A grounding member installed on the upper electrode to be electrically grounded; And

And a plurality of reactance members electrically connected between the upper electrode and each edge portion of the ground member to increase a current distribution applied to each edge portion of the upper electrode.
The method of claim 1,

The plurality of reactance members,

A first reactance element electrically connected between the upper electrode and the first edge portion of the ground member;

A second reactance element electrically connected between the upper electrode and the second edge portion of the ground member;

A third reactance element electrically connected between the upper electrode corresponding to the diagonal direction of the first edge portion and the third edge portion of the ground member; And

And a fourth reactance element electrically connected between the upper electrode corresponding to the diagonal direction of the second edge portion and the fourth edge portion of the ground member.
The method of claim 2,

And the first to fourth reactance elements are electrically connected in parallel between the upper electrode and the ground member.
The method of claim 2,

And the first reactance element is one of a capacitor and an inductor.
The method of claim 4, wherein

And the capacitor has a negative reactance.
The method of claim 4, wherein

And the inductor has a positive reactance.
A chamber providing a plasma reaction space;

A substrate support member installed in the chamber to support a substrate;

An upper electrode installed inside the chamber so as to face the substrate support member and to which high frequency power and process gas are supplied;

A grounding member installed on the upper electrode to be electrically grounded; And

And a parallel LC circuit which is equivalently connected in parallel between the upper electrode and each edge portion of the ground member.
The method of claim 7, wherein

Wherein said parallel LC circuit comprises a plurality of reactance members in which a positive reactance element and a negative reactance element are alternately connected between said upper electrode and each edge portion of said ground member. Plasma processing apparatus.
The method of claim 8,

The negative reactance element is a capacitor, and the positive reactance element is an inductor.
The method of claim 9,

The plurality of reactance members,

A first reactance element electrically connected between the upper electrode and the first edge portion of the ground member;

A second reactance element electrically connected between the upper electrode and the second edge portion of the ground member;

A third reactance element electrically connected between the upper electrode corresponding to the diagonal direction of the first edge portion and the third edge portion of the ground member; And

And a fourth reactance element electrically connected between the upper electrode corresponding to the diagonal direction of the second edge portion and the fourth edge portion of the ground member.
The method of claim 10,

And the first reactance element comprises one of the capacitor and the inductor.
The method according to claim 1 or 7,

It further comprises a chamber lid installed to cover the upper portion of the chamber,

And the grounding member is the chamber lead.
The method according to claim 1 or 7,

A chamber lid installed to cover an upper portion of the chamber; And

And a ground plate installed to be spaced apart from the upper electrode by a predetermined height and grounded to the chamber lead.

And the grounding member is the grounding plate.
The method according to claim 4 or 11, wherein

And the second reactance element comprises the inductor when the first reactance element consists of the capacitor and the capacitor when the first reactance element consists of the inductor.
The method of claim 14,

And the third reactance element is made of the same reactance element as the first reactance element, and is made of a reactance element different from the second reactance element.
The method of claim 14,

And said fourth reactance element is made of the same reactance element as said second reactance element, and is made of a reactance element different from said first reactance element.