WO2010036383A1

WO2010036383A1 - Applications and methods for alkali silicate glass

Info

Publication number: WO2010036383A1
Application number: PCT/US2009/031699
Authority: WO
Inventors: Nathan P. Lower; Alan P. Boone; Ross K. Wilcoxon; Guy N. Smith; Nathaniel P. Wyckoff; Brandon C. Hamilton; David D. Hillman
Original assignee: Rockwell Collins, Inc.
Priority date: 2008-09-29
Filing date: 2009-01-22
Publication date: 2010-04-01

Abstract

An alkali silicate material is used as a dielectric during integrated circuit fabrication. The alkali silicate glass material is also deposited onto a substrate using a sprayer. An alkali silicate material is also co-deposited with a nano- or micro-particle composition or with an embedded passive or active device material on a substrate. The co-deposited materials are applied with a device having multiple depositors. An alkali silicate material is also used as a coating for various applications such as a hermetic and/or thermal coating for integrated circuit packaging, a coating for whisker prone materials, a coating to protect a surface from environmental corrosion due to water or moisture, a coating to protect a solar cell from environmental corrosion due to water or moisture, a coating for improving moisture durability in a cooling pipe.

Description

APPLICATIONS AND METHODS FORALKALI SILICATE GLASS

CROSS-REFERENCE TO RELATED PATENT APPLICATIONS

[0001] This application is a continuation-in-part of prior Application No. 12/286,207 entitled "ALKALI SILICATE GLASS BASED COATING AND METHOD FOR APPLYING" and filed September 29, 2008 and is a continuation-in-part of prior Application No. 12/240,775 entitled "GLASS THICK FILM EMBEDDED PASSIVE MATERIAL" and filed September 29, 2008, both of which are herein incorporated by reference in their entireties.

BACKGROUND

[0002] The present invention relates generally to substrates and more particularly to an electronic substrate containing embedded passive components, a substrate for connection or interconnection of electronic components, or a coating for use on a substrate. [0003] Electronic components (e.g., microelectronic components) are conventionally assembled on planar ceramic or organic laminate substrates that are electrically coupled or connected to a die with wire bonds or as flip chips. Organic substrates typically have very limited thermal management capabilities. Ceramic substrates have somewhat better thermal management capabilities, but are generally quite expensive. Both organic and ceramic substrates are typically better suited for planar or 2-D packaging rather than stacked or 3-D packaging. While embedded structures can be integrated into organic and ceramic substrates to provide for 3-D packaging (which may reduce the size of the packaged device), the embedding typically requires significant initial cost and may not be suitable for prototyping or low volume production.

[0004] Recently, electronic technologies are moving toward the embedding of passives into a substrate so as to cope with demand for miniaturization and sophisticated functions of electronic goods according to advances in the electronics industry. Embedded passives are components, such as resistors, capacitors, inductors or the like, which are integrated within or formed during the build up process of a printed circuit board (PCB) or other electronic substrate. These components may be embedded within one or more layers of a finished substrate, reducing the need to place and solder the passives during final board assembly. [0005] Many conventional products, including but not limited to microelectronics components, often include a wide variety of coating materials. These coating materials are used in an attempt to enhance performance of the product, increase product reliability, or for other purposes. Coatings are often used to correct for a known deficiency within the product itself. For example, a thermal coating can be added to help dissipate heat from a specific area of a product to prevent it from overheating during use. In another example, a protective coating may be used to enhance the reliability or manufacturability (e.g., processing windows) of the product itself.

[0006] These coatings may be organic or inorganic materials. Conventional organic coatings absorb moisture, ultraviolet (UV) radiation, etc. Moisture can degrade the coatings and/or the material interfaces they connect through chemical decomposition, material expansion, etc. Other factors such as elevated temperature, ozone, ultraviolet light, etc. can also degrade organic coating materials. In addition, organic-based coatings conventionally have coefficients of thermal expansion on the order of 100 ppm/degrees Celsius, which can lead to adhesion and/or cohesion failures when products are subjected to temperature variations. These types of degradation of the coating or device can limit suitability for use in harsh environments and can lead to failures during the operational lifetime of the devices. Application processes of conventional inorganic coatings may require expensive and/or high-stress environments, such as chemical vapor deposition, or very high processing temperatures.

[0007] Further, circuits are conventionally mounted to circuit boards and other substrates using soldered joints. Due to concerns with disposal of lead-based solders, the solder may often be a lead-free solder. Lead-free assemblies often contain components that have a surface finish of electroplated tin, which may have a tendency to develop "whiskers" or filaments that grow out of tin. Such whiskers can cause electrical shorting if the filaments extend to other metal surfaces or can break away from the surface and move to sensitive areas. In addition to electronic substrates that use tin surface finishes, other metal surfaces often have metal coatings of materials such as tin, cadmium, or zinc that can also produce similar whisker filaments.

[0008] In various devices such as a magnetic resonance imaging devices or nuclear magnetic resonance devices, the device may be liquid cooled. The liquid coolant is typically high purity deionized water and must remain highly pure and non-conductive in order to prevent deterioration of the readings made by the device. Corrosion of the coolant system by the coolant liquid can lead to a decrease in the purity of the cooling liquid and subsequent increase in conductivity and degradation of device performance.

SUMMARY

[0009] One embodiment of the disclosure relates to a device including an amount of an alkali silicate material and an amount of nano- or micro-particle material co-deposited with the amount of alkali silicate material. The amount of alkali silicate composition and the amount of nano- or micro-particle composition are co-deposited and thermally cured to form a substantially moisture resistant substrate.

[0010] Another embodiment of the disclosure relates to a device including a deposit head for depositing an alkali silicate material and a nano- or micro-particle material onto a substrate. The deposit head includes a plurality of depositors and a drive unit coupled to each of the plurality of depositors. The drive units include one or more drive elements for depositing a nano- or micro-particle material loaded droplet or an alkali silicate material loaded droplet onto a substrate. The device also includes a deposit head controller for controlling the driving of the drive elements. The deposit head controller includes at least one control element electrically coupled to at least one drive element. The device also includes a supply containing a plurality of the nano- or micro-particle material loaded droplet or the alkali silicate material loaded droplet.

[0011] Another embodiment of the disclosure relates to a method for forming an embedded passive device module. The method includes depositing a first amount of an alkali silicate material, co-depositing an amount of embedded passive device material with the amount of alkali silicate material, and thermally processing the amount of alkali silicate material and the amount of embedded passive device material at a temperature sufficient to cure the amount of alkali silicate material and the amount of embedded passive device material and form a substantially moisture free substrate.

[0012] Another embodiment of the disclosure relates to a surface including metal that is exposed to an external environment. At least a portion of the metal has a finish that is prone to whiskering. The surface also includes an alkali silicate glass based coating at least partially covering the metal.

[0013] Another embodiment of the disclosure relates to a method for preventing or inhibiting the oxidation of a solder joint or electrical interconnect of an electronic device. The method includes applying an alkali silicate glass based coating to the solder joint or electrical interconnect.

[0014] Another embodiment of the disclosure relates to a coating for reducing interaction between a surface and the environment around the surface. The coating includes an alkali silicate glass material configured to protect the surface from environmental corrosion due to water or moisture.

[0015] Another embodiment of the disclosure relates to a coating for reducing corrosion of a solar cell. The coating includes an alkali silicate glass material configured to protect the solar cell from environmental corrosion due to water or moisture.

[0016] Another embodiment of the disclosure relates to a method for improving moisture durability in a liquid cooling pipe. The method includes providing a first liquid in the liquid cooling pipe to clean the liquid cooling pipe, providing an alkali silicate glass material such that at least a portion of an interior of the liquid cooling pipe is coated with the alkali silicate glass material, and curing the alkali silicate glass material.

[0017] Another embodiment of the disclosure relates to an integrated circuit including a substrate and a dielectric material. The dielectric material includes an alkali silicate glass material.

[0018] Another embodiment of the disclosure relates to a device including a substrate and an interconnect layer disposed on the substrate including at least one layer of dielectric material. The dielectric material includes an alkali silicate glass material.

[0019] Another embodiment of the disclosure relates to a method for forming an integrated circuit. The method includes providing a substrate and depositing an alkali silicate glass material over the substrate using at least one of a sprayer and a piezoelectric actuated mechanism such as an ink-jet device.

BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The disclosure will become more fully understood from the following detailed description, taken in conjunction with the accompanying drawings, wherein like reference numerals refer to like elements, in which:

[0021] FIGURE 1 is a flow diagram illustrating the steps in a method for producing an integrated circuit assembly according to an exemplary embodiment. [0022] FIGURE 2 is a schematic cross-sectional view of an integrated circuit assembly produced according to the method described with respect to FIGURE 1 according to an exemplary embodiment.

[0023] FIGURE 3 is a schematic cross-sectional view of a substrate having an alkali silicate material solution provided thereon according to the method of FIGURE 1.

[0024] FIGURE 4 is a schematic cross-sectional view of a substrate having an alkali silicate material solution and an integrated circuit die provided thereon according to the method of FIGURE 1.

[0025] FIGURE 5 is a flow diagram illustrating the steps in a method for producing a flip chip assembly according to an exemplary embodiment.

[0026] FIGURE 6 is a schematic cross-sectional view of a flip chip assembly produced according to the method of FIGURE 5 according to an exemplary embodiment.

[0027] FIGURE 7 is a schematic cross-sectional view of a flip chip assembly illustrating the positioning of the flip chip on a substrate in accordance with the method of FIGURE 5.

[0028] FIGURE 8 is a schematic cross-sectional view of a flip chip assembly having an alkali silicate material solution introduced between a substrate and a flip chip in accordance with the method of FIGURE 5.

[0029] FIGURE 9 is a flow diagram illustrating the steps in a method for producing an integrated circuit assembly according to another exemplary embodiment.

[0030] FIGURE 10 is a schematic cross-sectional view of an integrated circuit assembly produced according to the method of FIGURE 9 according to an exemplary embodiment.

[0031] FIGURE 11 is a schematic cross-sectional view of a substrate having an integrated circuit die and an alkali silicate material solution provided on the die according to the method of FIGURE 9.

[0032] FIGURE 12 is a schematic cross-sectional view of a substrate having an integrated circuit die and a heat spreader provided thereon according to the method of FIGURE 9.

[0033] FIGURE 13A is a schematic cross-sectional view illustrating the provision of an alkali silicate solution according to the method of FIGURE 9.

[0034] FIGURE 13B is a top view of an integrated circuit assembly having an alkali silicate material according to another exemplary embodiment.

[0035] FIGURE 14 is a schematic cross-sectional view illustrating two wafers or integrated circuit dies coupled together using an alkali silicate glass material according to an exemplary embodiment. [0036] FIGURE 15 is a flow diagram illustrating the steps in a method for making a protected surface according to another exemplary embodiment.

[0037] FIGURE 16 is a schematic cross-sectional view of a circuit produced according to the method of FIGURE 15 according to an exemplary embodiment.

[0038] FIGURE 17 is a flow diagram illustrating the steps in a method for making a circuit according to another exemplary embodiment.

[0039] FIGURE 18 is a flow diagram illustrating the steps in a method for coating a surface according to an exemplary embodiment.

[0040] FIGURE 19 is a schematic cross-sectional view of a circuit produced according to the method of FIGURE 17 according to an exemplary embodiment.

[0041] FIGURE 20 is a schematic cross-sectional view of a circuit produced according to the method of FIGURE 17 according to another exemplary embodiment.

[0042] FIGURE 21 is a schematic cross-sectional view of a circuit produced according to the method of FIGURE 18 according to another exemplary embodiment.

[0043] FIGURE 22 is a flow diagram illustrating the steps in a method for coating a cooling pipe according to an exemplary embodiment.

[0044] FIGURE 23 is a schematic cross-sectional view of a coated surface produced according to the method of FIGURE 18 or FIGURE 22 according to an exemplary embodiment.

[0045] FIGURE 24 is a schematic cross-sectional view of a coated surface produced according to the method of FIGURE 18 or FIGURE 22 according to another exemplary embodiment.

[0046] FIGURE 25 is a block diagram illustrating a glass thick film embedded passive device module according to an exemplary embodiment.

[0047] FIGURE 26 is a cross-sectional view of an example of a circuit board including embedded passive devices according to an exemplary embodiment.

[0048] FIGURE 27 is a block diagram illustrating a deposit device according to an exemplary embodiment.

[0049] FIGURE 28 is a flow chart illustrating a method of forming a glass thick film embedded passive devices according to an exemplary embodiment.

[0050] FIGURE 29A is a cross-sectional view of an integrated circuit or electrical interconnect according to an exemplary embodiment. [0051] FIGURE 29B is a cross-sectional view of an integrated circuit or electrical interconnect according to another exemplary embodiment.

[0052] FIGURE 30 is a flow chart of a method for forming the integrated circuit or electrical interconnect of FIGURE 29, according to an exemplary embodiment.

[0053] FIGURE 31 is a perspective view of an ink-jet or sprayer depositing an ASG layer according to an exemplary embodiment.

[0054] FIGURE 32 is a perspective view of an ink-jet or sprayer depositing an ASG layer according to another exemplary embodiment.

[0055] FIGURE 33 is a block diagram of a depositor according to an exemplary embodiment.

[0056] FIGURE 34 is a block diagram of a depositor according to another exemplary embodiment.

[0057] FIGURE 35 is a perspective cutaway view of a portion of an integrated circuit device according to another exemplary embodiment.

DETAILED DESCRIPTION OF THE EXEMPLARY EMBODIMENTS

[0058] Described herein are various exemplary embodiments of materials, methods, devices, surfaces, etc. Some embodiments may comprise a material that can coat surfaces in a reliable manner and that is not susceptible to harsh environments. Some embodiments may comprise a material for coating a surface that is capable of providing protection from moisture as well as from breakdown by various forms of radiation (such as UV). Some embodiments may comprise a material or method for coating surfaces with finishes of materials such as tin, cadmium, zinc, etc. so they do not whisker. Some embodiments may comprise a material that will prevent or inhibit the internal corrosion of liquid cooling systems and maintain a high level of cooling fluid purity and resistivity within it. Some embodiments may comprise a material that can be processed and cured at temperatures less than 200 degrees Celsius.

[0059] Some embodiments may comprise an embedded passive material device having greater environmental and/or moisture resistance. Some embodiments may comprise a device for making an embedded substrate having greater environmental an/or moisture resistance. Some embodiments may comprise a method for forming an embedded substrate having greater environmental an/or moisture resistance. [0060] Some embodiments may comprise a method to more cost-effectively produce low to moderate production volume substrates that allows 3-D packaging and interconnection of electronic devices as well as good thermal management of power dissipating elements.

Some embodiments may comprise a substrate that can be more cost-effectively produced at low to moderate production volumes and/or that allows for 3-D packaging and interconnection of electronic devices as well as good thermal management of power dissipating elements.

[0061] Alkali Silicate Glass Based Coating and Methods for Applying

[0062] One embodiment of the disclosure relates to an electronic assembly. The electronic assembly includes an electronic device mounted on a substrate and electronically connected to the substrate with at least one solder joint or other electrical interconnect and an alkali silicate glass based coating at least partially covering at least one joint or electrical interconnect surface that has a whisker prone finish.

[0063] Another embodiment of the disclosure relates to a method for preventing or inhibiting the oxidation of the surface of one or more solder joints or other electrical interconnect of an electronic device. The method includes applying an alkali silicate glass based coating to the surface of electrical interconnect.

[0064] Another embodiment of the disclosure relates to a coating for reducing interaction between a surface and the environment around the surface. The coating includes an alkali silicate glass material configured to protect the surface from environmental corrosion due to water or moisture. The alkali silicate glass material may or may not be doped with a first element to affect the radiation passing through the coating.

[0065] Another embodiment of the disclosure relates to a coating for reducing corrosion in a solar cell. The coating includes an alkali silicate glass material configured to protect the solar cell from environmental corrosion due to water or moisture. The coating may or may not be doped to protect the solar cell from UV radiation. The coating may or may not act as an anti-reflective material to improve light transmission into the solar cell.

[0066] Another embodiment of the disclosure relates to a method for improving moisture durability and corrosion protection in a liquid cooling pipe. The method includes providing a first liquid in the liquid cooling pipe to clean the liquid cooling pipe, providing an alkali silicate glass material such that at least a portion of an interior of the liquid cooling pipe is coated with the alkali silicate glass material, and curing the alkali silicate glass material.

The alkali silicate glass functions to prevent or inhibit direct contact between the cooling pipe and high purity liquid coolant, and therefore inhibits corrosion of the cooling pipes or the introduction of impurities to the liquid coolant.

[0067] According to an exemplary embodiment, an alkali silicate glass material is used as a material for coupling or joining one or more electronic components together (e.g., in place of more conventional adhesive materials such as an epoxy-based die attach material), for coating one or more electronic components, or for coating another surface. The alkali silicate glass material is provided in the form of a liquid solution that is provided between the surfaces of two components to be joined together. The solution is then cured to remove the water therefrom, which leaves a solid, moisture-impermeable material that adheres the two surfaces together.

[0068] The alkali silicate glass material may advantageously exhibit dielectric material properties that are similar to or better than current adhesive materials. In contrast to more traditional adhesive materials, however, the alkali silicate glass materials may be relatively resistant to moisture (i.e., the material generally will not absorb moisture), which can make such materials suitable for use in environments in which humidity absorption can degrade the mechanical properties of the substrate and/or modify its electrical characteristics. [0069] According to an exemplary embodiment, an alkali silicate material is provided in solution with a liquid such as deionized water, after which the water is removed from the solution such that the remaining alkali silicate glass material may act to couple or join two or more electronic components together. The solution may include one or more alkali silicates, such as lithium, sodium, potassium, rubidium, cesium, or francium silicate materials. The solution may include a single type of alkali silicate (e.g., lithium silicate) or more than one type (e.g., a 1 : 1 molar ratio of lithium silicate and potassium silicate or a 1 :1 molar ratio of lithium silicate and sodium silicate).

[0070] Liquid alkali silicate solutions are commercially available from companies such as PQ Corporation of Malvern, Pennsylvania in a wide variety of SiO2 to M2O weight ratios (this ratio may be referred to as the "R value" for the solution). For example, solutions having R values of between 1.00 and 3.5 or greater than 3.5 may be obtained or created by dissolving additional silica into aqueous alkali silicate solutions. These solutions may be used as-is or may be further modified (e.g., by adding deionized water to the solution, by adding particles to modify its electrical conductivity, thermal expansion coefficient, or other characteristics, etc.). The particular materials utilized may vary depending on the desired application, material properties, and other factors according to various exemplary embodiments.

[0071] Highly siliceous liquid alkali silicate solutions tend to air dry rapidly, are the most refractory (high melting temperature), and are the most resistant to acids and corrosion. These silica rich liquid solutions tend to contain more water than alkaline rich solutions (per similar viscosity), and thus undergo greater shrinkage while curing. Low silicate ratio, alkaline rich solutions tend to have greater elasticity, lower brittleness, and less shrinkage but may exhibit poor corrosion resistance. These low ratio coatings also dry more slowly because their alkali content creates a greater affinity for water. Many chemically resistant cements and mortars are produced using high ratio (e.g., approximately 3.25) alkali silicate solutions. Alternatively, high alkali ratio silicate solutions may be doped with filler materials to produce a composite that has excellent moisture and corrosion resistance as compared to the undoped material.

[0072] In order for the alkali silicate materials to become moisture impermeable and relatively insoluble, the water must be nearly completely removed from the solution. The alkali silicate solutions may be cured at relatively low temperatures (e.g., less than or equal to about 150 or 160 degrees Celsius, or between approximately 95 and 100 degrees Celsius according to particular exemplary embodiments) to remove the water and solidify the material, thereby reducing residual stresses and processing costs. According to other exemplary embodiments, curing temperatures of greater than 160 degrees Celsius may be utilized. According to still other exemplary embodiments, curing temperatures of less than 100 degrees Celsius may be used as desired (e.g., air drying may remove a sufficient degree of moisture from the material for a particular application, particularly in environments where there is not substantial ambient humidity). For example, according to one exemplary embodiment, an alkali silicate solution may be cured at a temperature of between approximately 120 and 160 degrees Celsius for a period of between approximately 120 and 240 minutes to remove the water therefrom (although it should be understood that different curing times and temperatures may be used according to various other exemplary embodiments). It is intended that once cured, the material will advantageously be capable of withstanding high temperatures (e.g., up to a glass transition temperature of approximately 700 degrees Celsius).

[0073] The alkali silicate glass material may include one or more types of fillers (e.g., particles) added thereto so as to provide enhanced electrical and/or thermal conduction for the material (e.g., to allow for electrical interconnection between the electronic components through the material) or alternatively to provide enhanced electrical and/or thermal insulation. The alkali silicate glass material may also include materials therein for altering or modifying the thermal expansion characteristics of the material to allow it to better match the thermal expansion characteristics of the components to which it is coupled. [0074] For example, high thermal conductivity particles, such as, but not limited to, diamond, aluminum nitride, beryllium oxide, or metals may be added to the solution prior to curing to improve the thermal conductivity of the resulting alkali silicate glass material composite. One possible application for such a material may be as a material for joining a heat spreader or similar component to another electronic component to remove heat from the electronic component.

[0075] Particles may also be added to modify the thermal expansion coefficient of the material. For example, coefficient of thermal expansion (CTE) matching filler such as glass, ceramics, metals, or polymers may be added to the solution to modify the CTE of the final material, which may increase the utility of the material in applications such as underfills for flip-chip devices. This may improve its thermal cycle and shock loading reliability for high-temperature underfill applications (of greater than approximately 200 degrees Celsius). Current underfills, which are typically epoxy-based, are limited to relatively low operating temperatures (e.g., less than approximately 200 degrees Celsius) due to the fact that organics may decompose at higher temperatures.

[0076] The particles may be electrically and/or thermally conductive (e.g., metals, various forms of carbon, and some semiconducting ceramics) according to an exemplary embodiment. According to other exemplary embodiments, the particles may be electrically insulating but thermally conductive (e.g., diamond, aluminum nitride, beryllium oxide, etc.). [0077] According to another exemplary embodiment, the alkali silicate glass material may include nanoparticle modifiers, including, but not limited to, nano calcium carbonate, nano zinc oxide and nano silicon dioxide. Aqueous alkali silicate composite solutions applied on or between surfaces of materials dry to form a tough, tightly adhering inorganic bond that exhibits many desirable characteristics.

[0078] According to an exemplary embodiment, the alkali silicate glass material may be used to couple or join two or more components together in an electronics package (e.g., in a wire-bonded or flip chip integrated circuit assembly). Various exemplary embodiments illustrating the use of the alkali silicate glass material in this manner are described below. [0079] FIGURE 1 is a flow diagram illustrating steps in a method 100 for producing an integrated circuit assembly 110 according to an exemplary embodiment. FIGURE 2 is a schematic cross-sectional view of an integrated circuit assembly 110 produced according to the method described with respect to FIGURE 1.

[0080] As shown in FIGURE 2, an integrated circuit 112 is coupled or joined to a substrate 114 (e.g., a silicon, alumina, aluminum nitride, silicon-germanium, or other type of suitable substrate) with an alkali silicate glass material 118. In this manner, the alkali silicate glass material 118 is intended to take the place of a conventional adhesive (e.g., an organic adhesive) that may be used to join the integrated circuit 112 to the substrate 114. [0081] In a step 102 of the method 100, the substrate 114 is prepared and provided for assembly, after which an alkali silicate glass material solution 116 is provided on a top surface thereof in a step 104 as illustrated in FIGURE 3. According to an exemplary embodiment, the alkali silicate glass material solution 116 has a viscosity similar to that of liquid water. The thickness of the solution as provided may vary depending on the application and the material used. For example, if particle fillers are added to the alkali silicate solution, the minimum bond thickness may be limited by the size of the particles used. Where no particles are added, the bond thickness may be as low as desired (e.g., as low as approximately 200 nanometers). It should be understood that the viscosity and thickness of the solution may vary according to other exemplary embodiments. [0082] According to an exemplary embodiment, the alkali silicate glass material solution 116 includes relatively small (e.g., between approximately 2 and 10 micrometer diameter) electrically conductive particles (e.g., particles of silver, tin, metal coated polymers, and/or other conductive materials) to allow it to be used as an anisotropically conductive adhesive (ACA) material that both mechanically bonds two surfaces together and provides electrical connection between locations on the surfaces. When the two horizontal surfaces are held against each other, the electrically conductive particles provide vertical electrical interconnect between aligned electrical pads, but because the radial distance between adjacent pads is much larger than the vertical distance between pads on the two surfaces, adjacent pads are not electrically connected. ACA's typically utilize an organic material as the adhesive, which limits their suitability in harsh environments. The use of the alkali silicate glass material 118, with appropriate electrical particles interspersed therein, is intended to provide an ACA that is less susceptible to moisture and corrosion. This material could then be used to provide the electrical interconnect and act as a mechanical underfill for flip chip attached components, for example, as described below with respect to FIGURES 5-8.

[0083] After the alkali silicate glass material solution 116 is provided, the integrated circuit die 112 is provided on a top surface 117 of the alkali silicate glass material solution 116 in a step 106 as shown in FIGURE 4.

[0084] In a step 108 illustrated in FIGURE 2, to permanently couple or join the integrated circuit die 112 to the substrate 114, the alkali silicate glass material solution 116 is cured at a relatively low temperature (e.g., in an exemplary embodiment, less than or equal to approximately 160 degrees Celsius for a period of between approximately 120 and 240 minutes) to remove the moisture therefrom. The amount of shrinkage (if any) of the material will depend on the material used and other factors. For example, materials that include particles provided therein may be more resistant to shrinkage than those that do not. [0085] FIGURE 5 is a flow diagram illustrating steps in a method 200 for producing a flip chip integrated circuit assembly 210 according to another exemplary embodiment. FIGURE 6 is a schematic cross-sectional view of a flip chip assembly 210 produced according to the method described with respect to FIGURE 5.

[0086] As shown in FIGURE 6, an integrated circuit 112 is provided in a step 202 that includes metal interconnect bumps 213 provided thereon for electrically coupling the integrated circuit 112 to an underlying substrate 214 in a flip chip configuration. As illustrated in FIGURE 7, the metal bumps 213 are configured for alignment with contacts 215 provided on the substrate 214, as shown in FIGURE 7. As the integrated circuit 212 is positioned on the substrate 214 in a step 204 shown in FIGURE 8, the solder bumps make contact with the contacts 215 provided on the substrate 214. According to an exemplary embodiment, the metal bumps 213 and contacts 215 are formed from gold, copper, silver, tin, nickel or another metal or metal alloy.

[0087] In a step 206 shown in FIGURE 8, an alkali silicate glass material solution 216 is provided as an underfill material for the flip chip assembly 210. The alkali silicate glass material solution 216 is then cured in a step 208 at a relatively low temperature (e.g., less than or equal to approximately 160 degrees Celsius) for an appropriate amount of time to remove the moisture therefrom (the curing time will depend on many factors, including, for example, the size of the device being bonded, the material used, the temperature used, and other factors). [0088] In a step 209, diffusion bonding is performed to further couple the metal bumps 213 to the contacts 215 at a temperature of between approximately 200 and 300 degrees Celsius for a period of between approximately 3 and 5 minutes (although it should be understood that different times and temperature may be used according to other exemplary embodiments, and may vary depending on the material composition used). One advantageous feature of using the alkali silicate glass material 218 as an underfill material is that once cured, such material has a softening temperature of greater than approximately 700 degrees Celsius. Thus, during the subsequent diffusion bonding step 209, pressure is maintained between the metal bumps 213 and the contacts 215 at elevated temperatures, which is intended to speed metal diffusion required for the electrical and mechanical coupling of the components of the assembly 210.

[0089] To further enhance the diffusion bonding process, the alkali silicate glass solution 216 may include particles made from metals such as tin, silver, gold, indium, gallium, copper, nickel, bismuth, and other metals and alloys thereof. According to an exemplary embodiment, the alkali silicate glass solution 216 may include both a "parent" metal such as silver, gold, or copper as well as a low melting temperature metal such as tin, indium, gallium, bismuth, and other low melting temperature metals.

[0090] According to an exemplary embodiment, the particles (e.g., tin and silver particles) are provided at a loading volume of between approximately 10 and 70 percent. During the diffusion bonding process, the particles diffuse into the metal bumps 213 and contacts 215 to form a higher melting temperature alloy (e.g., where the metal bumps 213 and contacts 215 are formed from gold or a gold alloy, the addition of tin and/or silver produces an alloy in the interconnect bump that has a melting temperature that is higher than that of the original particles). One advantageous feature of using the alkali silicate glass to introduce tin into the diffusion bonding process is that the occurrence of metal oxidation may be reduced or eliminated (since the metal is not exposed to moisture or the ambient environment, particularly oxygen).

[0091] It should be noted that in addition to semiconductor substrates (e.g., silicon, silicon-germanium, gallium nitrogen, gallium arsenide, zinc oxide, sapphire, alumina, aluminum nitride, quartz, or other types of substrates), the method described with respect to FIGURES 5-8 may also be employed to adhere a bumped device flip chip device to a patterned indium tin oxide (ITO) coated glass material, such as that used in display technologies (it should be noted that other transparent conductive coatings may be used in display technologies, such as hydrogen impregnated alumina or other suitable materials). The relatively low curing temperatures and robustness of the cured material associated with alkali silicate glass may advantageously improve the reliability of these devices fabricated with chip on glass assembly processes.

[0092] It should also be noted that the examples described with respect to FIGURES 1-8 may also be applied to stacked die packaging assembly processes that utilize through silicon vias (TSVs) in which vias within an integrated circuit allow interconnections to be made between the active surface of the die and the back side of the die. Advantageous features of the alkali silicate glass material such as its relatively low coefficient of thermal expansion, moisture impermeability, and low temperature processing make this material particularly well-suited for multiple-die applications.

[0093] According to another exemplary embodiment, the alkali silicate glass material may include filler materials to enhance the thermal and/or electrical conductivity of the material. For example, an alkali silicate glass material may include filler materials such as diamond, aluminum nitride, beryllium oxide, silicon carbide, carbon nanotubes, graphite, pyrolytic graphite, metal fillers, or other suitable filler materials at a suitable volume loading (e.g., between approximately 50 and 90 percent). It should be understood that the material and volume loading may differ according to other exemplary embodiments depending on the particular application and desired performance characteristics. One advantageous feature of utilizing filler materials is that the resulting alkali silicate glass material may act both as a mechanical die attach material as well as a thermally and/or electrically conductive die attach material. Such filler materials may be used in conjunction with the alkali silicate glass material in conjunction with organic substrates, ceramic substrates, and stacked technologies such as silicon substrates or other devices.

[0094] FIGURE 9 is a flow diagram illustrating steps in a method 300 for producing a wire bonded integrated circuit assembly 310 according to another exemplary embodiment. FIGURE 10 is a schematic cross-sectional view of a wire bonded integrated circuit assembly 310 produced according to the method described with respect to FIGURE 9. As shown in FIGURE 10, the assembly 310 includes an integrated circuit die 312 provided on a substrate 314 in accordance with a step 301. A heat spreader 316 is provided above and coupled to the integrated circuit die 312. [0095] As shown in FIGURE 11, in a step 302, a wire bonding operation is performed to electrically couple the integrated circuit die 312 to the substrate 314. Wires 313 may be made of any suitable electrically conductive material as is well known in the art. [0096] In a step 303, an alkali silicate glass solution 318 is provided on the active side of the wire bonded integrated circuit 312. According to an exemplary embodiment, the alkali silicate glass solution 318 includes thermally conductive dielectric particles therein (e.g., diamond, etc.).

[0097] A heat spreader 316 is provided in contact with the alkali silicate glass solution 318 in a step 304, as shown in FIGURE 12, after which a second alkali silicate glass solution 322 is provided in a step 305 to encapsulate a portion of the assembly 310, as shown in FIGURE 13. The alkali silicate glass solutions 318 and 322 are subsequently cured to remove the moisture therefrom, which results in solid alkali silicate glass regions 320 and 324. According to other exemplary embodiments, the alkali silicate glass solutions 318 and 322 may be cured in separate curing steps and/or the alkali silicate glass solutions 322 may be replaced with another type of encapsulation material such as epoxy-based materials.

[0098] Referring now to FIGURE 13B, an integrated circuit assembly 350 is shown according to another exemplary embodiment. In this embodiment, alkali silicate glass material is used more sparingly or judiciously by depositing portions of the material on smaller areas than as shown in the embodiment of FIGURE 10 and 13 A. In this embodiment, on a first region 352 of assembly 350 (which may be a side of a die 351), alkali silicate glass material is provided over wire bond interfaces 354a-354e with a gap, space, or aperture 356a-d between each portion of alkali silicate glass material. Wire bond interface 354a-354e provide electrical connections between die 351 (and components fabricated or integrated thereon) and substrate 353 (e.g., a printed circuit board). In this manner, a plurality of wire bond interfaces 354a-354e are coated or protected with alkali silicate glass material by discrete portions each of which coats only one wire bond interface (or in alternative embodiments two, three or less than all wire bond interfaces in or part of region 352). The alkali silicate glass material may be deposited or provided using any of the methods described herein, and may further comprise any of the fillers, materials, or particles described herein to provide a composite.

[0099] Assembly 350 further comprises a region 358 comprising a plurality of wire bond interfaces 360a-360e. In region 358, a portion 360 of alkali silicate glass material is provided over all or substantially all of wire bond interfaces 360a-e in region 358 (in this case a side of die 351). In this embodiment, a non-ASG material may be used to couple a heat spreader or heat sink (not shown) to die 351; alternatively, an ASG material or both ASG and non-ASG materials may be used to couple a heat sink to die 351. [0100] As shown in FIGURE 10, after the heat spreader 316 is attached to the integrated circuit die 312, the outer surface of the heat spreader 316 remains exposed for easy attachment to the next portion of the thermal path, such as the package lid, a finned heat sink, a heat pipe, or the like. The resulting device would be similar to a Quad Flatpack No Lead (QFN) or a flip chip device with an integrated heat spreader, except that the heat would not have to travel through the integrated circuit to go from the active surface to the heat spreader.

[0101] According to other exemplary embodiments, the alkali silicate glass materials may be used in a process to adhere two surfaces together to create a hermetic seal. For example, such material may be used to provide a low cost hermetic packaging method for devices that would otherwise use a glass frit, diffusion bonding, or welding. In addition to being lower cost, it would also be performed at much lower temperatures, making it suitable for devices such as MEMS and other products that require low temperature possessing. [0102] According to other exemplary embodiments, the alkali silicate glass material may be used to couple or attach integrated circuit wafers together as part of a Wafer Level Packaging (WLP) assembly process, as illustrated in FIGURE 14, which illustrates two wafers 410 and 420 coupled together using an alkali silicate glass material 430. According to another exemplary embodiment, an alkali silicate glass material may be used to couple two integrated circuit dies together (as shown in FIGURE 14, the wafers may be substituted with integrated circuit dies).

[0103] As will be appreciated by those reviewing the present disclosure, the use of alkali silicate glass materials to couple or join components of integrated circuit assemblies together provides various advantages over currently known technologies. For example, the relatively low moisture absorption and high chemical resistance of the cured alkali silicate glass provides enhanced long term reliability when used in harsh (humid, high temperature, corrosive, etc.) environments such as that experienced in avionics. Chemically inert particles can be added to the adhesive to modify its thermal expansion coefficient and thermal conductivity. Particles can also be added to modify the electrical properties of the material and/or to facilitate diffusion bonding when an alloying element is incorporated therein. Advantageously, the material may be cured at relatively low temperatures, which prevents or inhibits damage to the surrounding components in the device. [0104] According to various exemplary embodiments, the alkali silicate glass (ASG) composite can be used as a hermetic thermal coating and has dielectric material properties similar to or better than conventional coating materials. Once cured, the material may not absorb moisture, making it suitable for use in harsh environments in which humidity absorption can degrade mechanical properties of the coating and/or modify its performance. The material can be cured at low temperatures (e.g., 150⁰C or less), thereby reducing residual stresses and processing costs. Filler materials can be added to the material to control the thermal expansion coefficient and give the material much higher thermal conductivity than can be achieved with conventional ceramic substrate materials. Coatings of ASG based materials can be robust, easily applied, and mixed with other materials to form a composite material. The composite can be tailored to create a barrier between the surfaces they are in contact with and their surroundings. The ASG based coating may also act as a medium for particles that modify an energy flux. ASG based materials can be used to create a barrier coating on a surface to prevent, or at least reduce or inhibit, interactions with the environment around it (e.g., protection against moisture).

[0105] According to various exemplary embodiments, an alkali silicate glass composite can be used as a coating material in numerous applications including, but not limited to, electronics packaging. The low moisture absorption and high chemical resistance of the composite may greatly improve the long term reliability of the product when used in harsh environments (e.g., humid, high temperature, corrosive, etc.) such as those experienced by avionics. Chemically inert particles can be added to the coating to modify the thermal expansion coefficient and thermal conductivity. Particles can also be added to modify other properties (e.g., electrical properties) of the material as desired for any given application. [0106] Referring to FIGURE 15, a process flow diagram illustrates a method 500 for making a protected surface according to an exemplary embodiment. Referring to FIGURE 16, a schematic cross section illustrates an electronic assembly 510 produced by method 500 according to an exemplary embodiment. A surface 514 is provided at a step 502, for example a substrate, circuit board, a silicon wafer, another circuit, a communications port, an LED, a solar cell, or any other surface for protection. A tin, cadmium, zinc, or other finish is then applied to surface 514 at a step 504. Surface 514 is then processes at a step 506, for example, surface 514 may have at least one component 512 soldered to it. Component 512 may be any component or device capable of mounting on a surface, for example an integrated circuit, a resistor, a capacitor, a diode, a light emitting diode (LED), an inductor, a photovoltaic cell, etc. Soldering component 512 to surface 514 generally produces one or more soldering bumps or soldering joints 513. The solder may be any type of solder, for example a lead- free solder including tin, bismuth, copper, silver, indium, zinc, antimony, any combination thereof or a leaded solder. The surface finish (e.g., tin, cadmium, zinc, etc.) of the leads being soldered and the electrical interconnect to which they are soldered may be prone to whiskering and or corrosion. [0107] An alkali silicate glass (ASG) based coating 518 is applied to solder joints, component leads, electrical interconnects, or other metallic surfaces 513 at a step 508 to at least partially cover one or more of the joints and whisker and/or corrosion prone surfaces. The ASG coating is generally configured to reduce the interaction between at least one of these metalized surfaces 513 and the environment around the surface. For example, the ASG coating may reduce the likelihood of or prevent the metal from oxidizing and/or corroding (e.g., chemical corrosion, galvanic corrosion, etc.) and increase moisture durability of the metal surface (e.g. solder joint, electrical interconnect, etc). The coating may also cover at least a portion of surface 514 and/or at least a portion of component 512 to prevent oxidation and/or increase moisture durability. The thickness of the ASG coating may be minimized to sufficiently protect the metal surfaces while being resistant to cracking and without taking up a large amount of space.

[0108] Referring to FIGURE 17, a process flow diagram illustrates a method 600 for making a circuit or other electronic device according to another exemplary embodiment. A substrate is provided at a step 602, for example a circuit board. An electronic device or circuit (e.g., an LED, a photovoltaic cell, and integrated circuit, etc.) is mounted on the substrate at a step 604. The mounting may include soldering the circuit to the substrate. [0109] An ASG material is doped with a first element, dopant, or filler at a step 606. The first element is generally configured to affect the radiation that impacts the coating. For example, the dopant may affect at least one of ultraviolet, x-ray, atomic and particle radiation, radio wave, infrared, and visible light radiation. According to various exemplary embodiments, the first element may include nano- or micro- particles, a chemical additive, ceramic particles, fluorescing particles, magnetic materials, a rare-earth material (e.g., a rare earth oxide powder, a ceramic oxide include rare earth materials, etc.), a lanthanide material, or an actinide material (e.g., depleted uranium). The ASG material may also be doped with additional elements including nano- or micro- particles, a chemical additive, fluorescing particles, magnetic materials, or a rare-earth material. According to some exemplary embodiments where a fluorescing particle is used, the fluorescing particle may be a nanophosphor. According to other exemplary embodiments, the ASG material may be doped with diamond, aluminum nitride, boron nitride, silica, and/or alumina material. According to some exemplary embodiments, the ASG material may be doped with at least 2 molar percent of the first element.

[0110] According to other exemplary embodiments, the ASG material may be doped with between about 3 and 25 molar percent of the first element. According to still other exemplary embodiments, the ASG material may be doped with greater than about 25 molar percent of the first element. According to further exemplary embodiments, the ASG material may be doped with less than about 2 molar percent of the first element if nano- or micro- particles are used.

[0111] The doped ASG material is then used to coat a surface of the circuit at a step 608. According to various exemplary embodiments, the coating is configured to protect the circuit from environmental corrosion or oxidation due to water or moisture. According to some exemplary embodiments, the coating is also configured to block or absorb electromagnetic radiation. According to other exemplary embodiments, the coating is configured to allow electromagnetic radiation to pass through the coating. According to other exemplary embodiments, the coating may be configured to retransmit electromagnetic radiation of a first wavelength as electromagnetic radiation of a second and different wavelength. According to other exemplary embodiments, the coating may not be doped with a dopant or particle additive.

[0112] Referring to FIGURE 18, a flow diagram illustrates the steps in a method 700 for coating an existing surface according to an exemplary embodiment. According to the various exemplary embodiments of step 606, an ASG material is doped with an element to affect the electromagnetic radiation passing through the ASG material. The doped material can then be applied as a coating on an existing surface. For example, the ASG material can be applied to a solar cell, a window, a a sealing surface between two materials, etc. in order to protect the surface from moisture or water. The ASG material can also protect the surface or object behind the surface from electromagnetic radiation. For example, a coated window may reduce the amount of ultraviolet (UV), visible, or infrared rays that pass through as well as dissipate any heat transferred by the rays. FIGURES 19-21 provide further examples of ASG coated circuits or surfaces. It is noted that according to other exemplary embodiments, the ASG coating may be formulated to provide protection without the need for doping.

[0113] Referring to FIGURE 19, an electronics package 800 includes a circuit 810 and a circuit 812 mounted on a substrate 814 and at least partially encapsulated by an ASG material 830 according to an exemplary embodiment. The ASG material is doped with conductive particles for blocking or absorbing RF energy or radiation, at least partially shielding circuits 810 and 812 from radio waves. A mixed electronics device having analog circuitry (e.g., circuit 812) and digital circuitry (e.g., circuit 810) can be coated with an ASG material doped with the conductive particles in a manner configured to reduce or prevent crosstalk between the circuitry and/or electromagnetic interference from outside package 800. When used for such applications, the dopant may be metallic particles or magnetic particles at a quantity greater than 5 volume percent up to 95.1 volume percent (for quaternary (4-particle size) particle packing). The encapsulant (ASG material 830) can both physically protect the integrated circuits from moisture with a hermetic or near hermetic seal as well as reduce electromagnetic interference between components or from outside sources. For example, electronics package 800 may reflect or block an incoming RF signal 840 or absorb an RF signal transmitted by circuit 812 in the direction of circuit 810. [0114] According to some exemplary embodiments, ASG coating 830 may also include materials to absorb atomic particles to provide radiation hardening, for example to block x- ray, atomic radiation (gamma-ray, alpha, beta, etc.), and/or UV radiation and to reduce the likelihood that circuit 810 or 812 will fail due to defect formation caused by the radiation. It is noted that according to other exemplary embodiments, the ASG coating may be formulated to provide protection without the need for doping.

[0115] Referring to FIGURE 20, an electronics package 900 includes a light emitting diode (LED) 910 mounted on a substrate 914 and at least partially encapsulated by an ASG material 930 according to an exemplary embodiment. ASG material 930 may be doped with particles for spreading or diffusing visible light radiation. ASG material 930 may be doped with fluorescing particles that at least partially absorb light from LED 910 and emit or retransmit the light at a different wavelength. Certain wavelengths of light (e.g., certain colors) are difficult to generate in light emitting diodes. Multiple colors are generally needed to produce white light and the efficiency of generating each color may not be the same. According to the illustrated exemplary embodiment, ASG 930 with the integrated fluorescing particles may be excited by an LED (e.g., a highly efficient LED) to retransmit the light at a different wavelength while providing a robust coating that is generally optically clear and that can be processed at low temperatures. It is noted that according to other exemplary embodiments, the ASG coating may be formulated to provide protection without the need for doping. Similarly, specific bandwidths of light may be difficult to generate or filter, but ASG 930 with tailored particles may be used to do this. [0116] Referring to FIGURE 21, a solar panel 1000 includes at least one photovoltaic cell 1010 mounted on a substrate 1014 and at least partially coated by an ASG material 1030 according to an exemplary embodiment. ASG material 1030 is doped with particles for absorbing specific wavelengths of electromagnetic radiation 1040 and for retransmitting the radiation at a different wavelength. ASG material 1030 may coat entire solar panels to reduce the amount of moisture (potentially resulting in corrosion and performance degradation) on solar panel 1000 while allowing solar radiation to pass through. ASG material 1030 can be used to provide increased protection from at least one of environmental corrosion due to water or moisture, UV light (e.g., from the sun), and radiation protection (e.g., for use in space or military applications). ASG material 1030 is doped with appropriate fillers, for example nanoparticles or chemical additives. [0117] According to other exemplary embodiments, fluorescing particles can be added to absorb harmful UV light and emit or retransmit useable light (e.g., visible light) to photovoltaic cell 1010 for conversion to electrical energy. ASG coating 1030 generally has an appropriate refractive index (e.g., by formulation or nano-particle additives) that can be used to create anti-reflective coatings that allow the solar cell to capture more light. ASG coatings may not significantly degrade over time or darken from UV or other radiation exposure, can provide hermetic or near hermetic protection of the surface of photovoltaic cell 1010, and can withstand high temperatures (e.g., greater than 100 degrees Celsius and/or up to about 500-600 degrees Celsius), contrary to polymer based coatings. It is noted that according to other exemplary embodiments, the ASG coating may be formulated to provide protection without the need for doping.

[0118] According to some exemplary embodiments, the coating may be chemically treated to have a specific refractive index or refractive index gradient between the substrate and air. According to other exemplary embodiments, multiple layers of glass coating having increasing or decreasing refractive index could be used. [0119] Referring to FIGURE 22, a flow diagram illustrates the steps in a method 1100 for coating a cooling pipe used to cool a device (e.g., an MRI, NMR, or other electronic device) according to an exemplary embodiment. According to various exemplary embodiments, the cooling pipe may be made of copper or another metal. The coolant traveling in the cooling pipe may be water, another liquid, or any fluid capable of transferring heat. A liquid for cleaning is provided in the cooling pipe in order to clean the interior surface of the cooling pipe at a step 1102. The cleaning solution may be a standard metal cleaner (e.g. acid, detergent, etc). After application, any residual or remaining liquid can be removed via evaporation, via heat or blown air, or otherwise.

[0120] At least a portion of the interior of the cooling pipe is then coated with an ASG material that is configured to provide a dielectric barrier at a step 1104. According to one exemplary embodiment, a galvanic junction in the cooling pipe may be coated. According to other exemplary embodiments, the interior of the entire heat exchange area of the cooling pipe may be coated. In this embodiment, the ASG material is generally a highly durable material with a high silicate content or "R value." R values (e.g., SiO2 to M2O weight ratio when metal oxides are added) of the ASG material at about 4.0 or higher are expected to be particularly suitable for this application, however according to other exemplary embodiments, the ASG material may have an R value of greater than about 3.5 or greater than about 3.0. For example, a molar ratio of 1 : 1 of a binary alkali or silicate may be added along with a nano or microparticle dopant to achieve the desired durability. It is noted that according to other exemplary embodiments, the ASG coating may be formulated to provide protection without the need for doping.

[0121] The ASG coating on the interior of the pipe is then cured at a step 1106 so it bonds with or adheres to the cooling pipe. The coating may be cured by blowing air through the cooling pipe (e.g., drying the coating) or by heating the coating and cooling pipe. The cured coating is generally an electrical insulator and configured to maintain the purity of the fluid (e.g., water, refrigerant, etc.) flowing in the cooling pipe by reducing corrosion of the cooling pipes, which lead to contamination and increased conductivity of the cooling liquid. Therefore, the likelihood or degree to which the fluid flowing in the cooling pipe is conductive or contaminated may be decreased. Additionally, according to various exemplary embodiments the ASG coating may prevent or reduce oxidation of the cooling pipe during handling or exposure. [0122] The cooling pipe with the cured ASG material is provided to or installed in a cooling system at a step 1108. The cooling liquid is provided into the cooling pipe or cooling system at a step 1110. According to various exemplary embodiments, the cooling liquid can be water, a refrigerant, another liquid, or any other fluid capable of transferring heat.

[0123] It is noted that according to other exemplary embodiments, various steps of method 1100 may be omitted or rearranged. According to some exemplary embodiments, steps 1108 and 1110 may be omitted. According to other exemplary embodiments, step 1101 may be omitted. According to still other exemplary embodiments, steps 1102, 1108, and 1110 may be omitted.

[0124] Referring to FIGURE 23, a cross section of a thin ASG based coating 1230 on a metal surface 1210 (e.g., metal pipe, metal heat exchanger, etc.) for preventing or reducing the amount of oxygen contacting the metal to form a metal-oxide layer is illustrated according to an exemplary embodiment.

[0125] Referring to FIGURE 24, a cross section of a thin ASG based coating 1230 around an interior of a cooling pipe 1210 (e.g., made of copper or another metal) is illustrated according to an exemplary embodiment. A cooling fluid 1240 flows in cooling pipe 1210 and across ASG based coating 1230 without contacting cooling pipe 1210, preventing or reducing the likelihood of a reaction between cooling pipe 1210 and fluid 120. According to one exemplary embodiment, the cooling fluid 1240 may be a highly corrosive liquid, such as liquid metal and the ASG based coating 1230 may prevent or reduce the likelihood that a chemical or metallurgical interaction between solid and liquid metals occurs. According to other exemplary embodiments, the fluid 1240 may be water, a refrigerant, or another type of coolant. According to various exemplary embodiments, the thickness of ASG layers 1230 may be optimized to reduce the likelihood of pinholes or lack of coverage (as with thick coatings) while exhibiting little cracking (as with thin coatings). According to one exemplary embodiment, the thickness of ASG coating 1230 may be about 1 micron. According to another exemplary embodiment, the thickness of ASG coating 1230 may be less than or greater than 1 micron.

[0126] Various features of alkali silicate glass materials in the context of coatings or applications for integrated circuit and electronics packages are described in co-pending U.S. Patent Application No. 11/508,782, filed August 23, 2006, co-pending US Patent Application No.: 11/959,225, filed 12/18/2007, co-pending PCT Application No. PCT/US2008/074224, filed on August 25, 2008, and co-pending PCT Application No. PCT/US2008/075591, filed on September 8, 2008, the entire disclosures of which are incorporated herein by reference.

[0127] According to various exemplary embodiments, the coating may be a coating described in US Patent Application No. 11/508,782, filed on August 23, 2006, and entitled "Integrated Circuit Protection and Ruggedization Coatings and Methods," US Patent Application No. 11/784,158, filed on April 5, 2007, and entitled "Hermetic Seal and Hermetic Connector Reinforcement and Repair with Low temperature Glass Coatings," US Patent Application No. 11/732,982, filed on April 5, 2007, and entitled "A Method for Providing Near-Hermetically Coated Integrated Circuit Assemblies," US Patent Application No. 11/732,981, filed on April 5, 2007, and entitled "A Method for Providing Near- Hermetically Coated, Thermally Protected Integrated Circuit Assemblies," US Patent Application No. 11/784, 932, filed on April 10, 2007, and entitled "Integrated Circuit Tampering Protection and Reverse Engineering Prevention Coatings and Methods," US Patent Application No. 11/959,225, filed on December 18, 2007, and entitled "Adhesive Applications Using Alkali Silicate Glass for Electronics," US Patent Application No.: 11/959,225, filed December 18, 2007, and entitled "Adhesive Applications for Using Alkali Silicate Glass for Electronics," and US Application No. 12/116,126, filed on May 6, 2008, entitled "System and Method for a Substrate with Internal Pumped Liquid metal for thermal Spreading and Cooling," co-pending PCT Application No. PCT/US2008/074224, filed on August 25, 2008, and co-pending PCT Application No. PCT/US2008/075591, filed on September 8, 2008, each of which is herein incorporated by reference in its entirety. [0128] Glass Thick Film Embedded Passive Material

[0129] A glass thick film embedded passive device module includes, but is not limited to, an amount of an alkali silicate composition, and an amount of nano- or micro-particle composition co-deposited with the amount of alkali silicate composition, the amount of alkali silicate composition and the amount of nano- or micro-particle composition being co- deposited and thermally cured to form a substantially moisture free substrate. [0130] A device for forming a glass thick film embedded material includes, but is not limited to, a deposit head for depositing an alkali silicate material and a nano- or micro- particle composition onto a substrate, the deposit head further including a plurality of depositors disposed substantially within in the deposit head; and a drive unit coupled to the plurality of depositors, the drive unit further including one or more drive elements for depositing a nano- or micro-particle composition loaded droplet or an alkali silicate material loaded droplet onto a substrate; a deposit head controller for controlling the driving of the drive elements, the deposit head controller further including at least one control element electrically coupled to at least one drive element; and a supply containing a plurality of the nano- or micro-particle composition loaded droplet or the alkali silicate material loaded droplet.

[0131] A method for forming a glass thick film embedded material includes, but not limited to, depositing an amount of alkali silicate material, co-depositing an amount of embedded passive device material with the amount of alkali silicate material to the surface, and thermally processing the amount of alkali silicate material and the amount of embedded passive device material at a temperature sufficient to cure the amount of alkali silicate material and the amount of embedded passive device material and form a substantially moisture free substrate.

[0132] In one or more various aspects, related devices and systems include but are not limited to circuitry and/or programming for effecting the herein referenced method aspects; the circuitry and/or programming can be virtually any combination of hardware, software, and/or firmware configured to effect the herein referenced method aspects depending upon the design choices of the system designer.

[0133] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention claimed. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features will become apparent by reference to the drawings and the following detailed description. [0134] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof. In the drawings, similar symbols typically identify similar components, unless context dictates otherwise. The illustrative embodiments described in the detailed description, drawings, and claims are not meant to be limiting. Other embodiments may be utilized, and other changes may be made, without departing from the spirit or scope of the subject matter presented here.

[0135] Referring to FIGURE 25, a glass thick film embedded passive device module 1300 is illustrated, in accordance with an exemplary embodiment. The glass thick film embedded passive device module 1300 includes at least a first layer 1302 including a first co- deposition of an amount of an alkali silicate composition 1308 and an amount of a nano- or micro-particle composition 1310. The first co-deposition of an amount of an alkali silicate composition 1308 and an amount of a nano- or micro-particle composition 1310 may be thermally cured to form a substantially moisture free substrate. In further embodiments, a glass thick film embedded passive device module may include a second layer 1304 applied substantially onto the first layer 1302 including a second co-deposition of the alkali silicate material 1308 and at least one particle and/or nano- or micro-particle composition 1310 - 1324. At least one of the first layer 1302 and/or the second layer 104 may be thermally cured to form a multi-layer substantially moisture free substrate. [0136] It is contemplated that a third layer 1306 may be formed substantially on the second layer 1304 and so on as necessary. It is to be noted that an embedded passive device module 1300 according to the present disclosure may include tens, hundreds, or thousands of embedded passive device module layers bonded to one another, to a layer of alkali silicate material, to a metallization layer, to a laminate layer, etc., to form one or more substrates or portions of a substrate including at least one embedded passive device, structure, and/or component. For instance, an embedded passive device may include one or more electrical contacts. For resistors and capacitors, the electrical contacts may sandwich the alkali silicate material. For inductors, the alkali silicate material may be deposited on top of a metalized coil structure. It is further contemplated that any combination of alkali silicate material, alkali silicate material including embedded passive device material, metallization layers and/or laminate layers may be formed. Thus a glass thick film embedded passive device module 1300 may include N layers as desired or necessary for embedded passive device and/or electronic substrate functionality. Individual layers, or total number of layers may be on the order of about a submicron to tens or hundreds of microns thick. Particle and/or nano- or micro-particle composition 1310 - 1324 may be any combination of particles and/or nano- or micro-particles, including a nano- or micro-particle composition forming at least a portion of an embedded passive device (e.g., embedded resistor, embedded capacitor, and/or embedded inductor).

[0137] The components (e.g., alkali silicate composition, a nano- or micro-particle composition and/or a particle composition) of the first through N layers may be applied via a deposit device (e.g., micro-piezo applicator). In additional embodiments, the components of the first through N layers may be co-deposited via a print head (e.g., micropiezo print head), a microspray head (e.g., a co-axial spray device), an ultra-fine spray deposition mechanism, an ultrasonic deposition mechanism, or any other suitable deposition or co- deposition mechanism. Embedded passive device module 1300 may be applied over and/or between at least one interconnect layer of a printed circuit board or other electronic substrate. For instance, at least one of first layer 1302, the second layer 1304, the third layer 1306 and so on may be applied over an insulating layer of an electronic substrate. At least one of first layer 1302, the second layer 1304, the third layer 1306 and so on may be applied over a conducting layer of an electronic substrate. In additional embodiments, one or more interconnect layers may also be formed from the alkali silicate composite material. [0138] The thickness of an embedded passive device module layer 1302, 1304, 1306...N is not specifically limited, and may be suitably selected from within a thickness range which is generally applied in this technical field or desirable for the electronic substrate configuration. Furthermore, the thickness of a plurality of bonded embedded passive device module layers, or an embedded passive device module layer bonded to an alkali silicate layer, a conductive layer, a dielectric layer, etc. may be determined by technical specifications or other requirements.

[0139] The first layer 1302, second layer 1304, the third layer 1306, and so on, of the glass thick film embedded passive device module 1300 may comprise a thin layer of alkali silicate material as disclosed in co-pending and co-owned application "INTEGRATED CIRCUIT PROTECTION AND RUGGEDIZATION COATINGS AND METHODS" (application no.: 11/508,782, filed August 23, 2006), which is incorporated herein by reference in its entirety. The glass thick film embedded passive device module 1300 may be produced from a material which is a low viscosity liquid at room temperature prior to curing (room temperature may comprise a range between about sixteen degrees Celsius and about twenty-seven degrees Celsius). The material may be an alkali silicate material. The material may be an alkali silicate material with a SiO2/M2O ratio (in which M2O is an alkali oxide, e.g. any M+ ion) of greater than or equal to about 2.5. The material may be an alkali silicate material with a SiO2/M2O ratio of greater than or equal to about 4. The material may be an alkali silicate/water solution. The material may be an alkali silicate material with nano- or micro-particle modifiers including, but not limited to, nano calcium carbonate, nano zinc oxide, and/or nano silicon dioxide. The material may be cured to produce the first through N layers at low temperatures of typically no more than about 160 degrees Celsius. The material may cure into a glass. Further, the alkali silicate material may be optically transparent and contain properties such as high transmission efficiency (e.g., greater than 90%), including interface reflection and low absorption loss. In additional embodiments, the alkali silicate material may be doped with metal ions to provide coloring or light filtering, as may be desirable for optical applications. [0140] As stated previously, layers 1302 - N may be cured to form a substantially moisture free bond between the layers 1302 - N. Specifically, subsequent to curing, the layers 1302 - N of the glass thick film embedded passive device module 1300 may be intimately bonded (tightly adhered) to one another and to one or more layers of an electronic substrate, and may be watertight with respect to one another and with one or more layers of an electronic substrate. The layers 1302 - N may be stable from about negative two-hundred forty-three degrees Celsius to at least about seven-hundred twenty- seven degrees Celsius.

[0141] As indicated, at least one of the glass thick film embedded passive device modules 1300 may include a plurality of embedded passive devices or structures, or embedded passive device or structure components. The term "passive device" is hereinafter understood to describe an elemental resistor, capacitor, or inductor. In one embodiment, embedded passive devices may include resistive devices (e.g., resistors), inductive devices (e.g., inductors), and/or capacitive devices (e.g., capacitors). Embedded passive devices, structures or components may be co-deposited with the alkali silicate material as nano- or micro-structures or nano- or micro-particles. Co-deposited nano- or micro-particles may be in the form of a low-temperature nano- or micro-particle solution or suspension. For instance, the co-deposited nano- or micro-particles may be a flowable precursor including fine and/or ultra-fine particles (e.g. metal particles), with particle dimensions ranging from 10 nm to several hundred nm, and additional chemical additives (such as wetting agents or surfactants) that may be utilized to screen print or inkjet high quality metallization layers with low conversion temperatures in the range or 100 degrees C to 350 degrees C. At least one of the first layer 1302, the second layer, 1304, the third layer 1306 and so on may include a nano- or micro-particle suspension that is at least 60% by weight. [0142] Referring to FIGURE 26, a cross-sectional view of a circuit board 1400 including one or more embedded passive device modules according to an embodiment of the disclosure is shown. Circuit board 1400 or other electronic substrate may include embedded resistors 1402, and/or embedded capacitors 1404. Circuit board 1400 may also include an amount of embedded passive material 1406, a surface mounted chip 1408 and/or an amount of inner core material 1410. [0143] Embedded resistors 1402 may be formed, for example, from nano- or micro-silver, graphite, copper, tungsten, or other nano- or micro-particles, and/or any other resistive metal. Resistive structures may be composed of thick film resistor formulations formulated to cover a broad range of bulk resistivities. Resistive structures may be formed from one or more layers of resistive material co-deposited with an alkali silicate layer. The resistor may be deposited (e.g., via a micro-piezo depositor) directly on to pre-patterned terminations on the circuit board core and cured at temperatures on the order of 150⁰C. In some instances, a resistor paste may be co-deposited with the alkali silicate glass material applied to a conductive substrate layer in the sizes and locations for which the circuit design calls. [0144] Embedded capacitors 1404 may be formed, for example, from a nano- or micro- metal, ferroelectric nano- or micro-particles, paraelectric nano- or micro-particles, etc. Embedded capacitors have been developed to address the need for having a small capacitor, and reducing or eliminating the need to solder passive devices onto the substrate (saving processing time and cost). The term "ferroelectric" may refer to a state of spontaneous polarization generated by the collective displacement of ions within the lattice of certain ionic crystals that produces a state of internal electrical polarization without the application of an external electric field. Ferroelectric materials are characterized by a transition- temperature, known as the Curie transition-temperature, below which the ionic crystal displays paraelectric behavior. Semi-conductive ferroelectrics may be obtained either by thermally treating ferroelectrics or by adding a doping additive to the surface of ferroelectrics followed by thermal treatment. Examples of the ferroelectrics which can be used in the exemplary embodiments include lead (Pb)-based ferroelectrics, such as BaTiO 3, PbTiO 3, PMN-PT, SrTiO 3, CaTiO 3, and MgTiO 3. Such ferroelectrics may be used alone or in a mixture of two or more.

[0145] The term "paraelectric" may refer to a condition in which a material does not possess internal electrical polarization in the absence of electrical fields. A paraelectric material may be any material that may become polarized under an applied electric field. Paraelectrics (e.g., tantalum pentoxide) may be crystal phase materials in which electric dipoles are unaligned (i.e. unordered domains that are electrically charged) and thus have the potential to align in an external electric field and strengthen it.

[0146] In one embodiment, at least one embedded capacitor may be a two-layer embedded capacitor comprising a conductive layer (e.g., a metal-filled alkali silicate composite layer or a metal layer within the substrate) and a dielectric layer composed of co-deposited nano- or micro-metals and alkali silicate composite, or a conductive alkali silicate composite layer and a dielectric alkali silicate composite layer which are sequentially deposited. Nano- or micro-particles forming an embedded capacitor may be in the form of a dielectric powder (including capacitive nano- or micro-particles, e.g., barium titanate and/or tantalum pentoxide) dispersed in a layer of glass thick film (e.g., alkali silicate material). Capacitive structure powder and glass thick film material may be co-deposited over one or more electrodes pre-patterned on a circuit board, then cured at a relatively low temperature, on the order of less than 150 degrees Celsius. A glass thick film electrode layer (e.g., containing nano- or micro-silver as the conductive phase) may be applied on the previously applied dielectric layer to form a second electrode layer. Embedded capacitor structures may be positioned underneath a supported active component. For instance, an embedded capacitor dielectric placed between a power source and a ground plane may lower noise and provide capacitors for filter applications. It is contemplated that embedded capacitance devices of the present disclosure may provide a capacitance density on the order of 0.5 to over 200 nF/in2. Capacitance values in the picofarad range are also possible on the low end. Additionally, a multi-layer embedded capacitor may have the potential of even greater capacitance values.

[0147] Circuit board 1400 may also include one or more embedded passive inductors (not shown). Embedded passive inductors may be high value inductive structures formed, for example, from iron, nickel or cobalt (Fe, Ni, Co) nano- or micro -particles. A well known structure for an embedded inductor is a spiral-shaped inductor embedded in a magnetically permeable material. Spiral shaped inductors may be embedded between an electronic substrate or other pre-fabricated materials, permalloy loaded epoxies, or the like. A spiral inductor may be formed by depositing and patterning a layer of conductive alkali silicate material (e.g., a silver loaded alkali silicate, a patterned metal layer in a laminate substrate, etc.). After the formation of the spiral inductor, a second layer of magnetically permeable alkali silicate material may be formed on the top surface of the spiral pattern, and subsequently cured at a suitable temperature.

[0148] As shown in FIGURE 26, one or more embedded passive device modules 1300 may then be combined with one or more additional signal routing layers, including a capacitive inner layer 1406, copper signal trace, core material (e.g., alkali silicate core material, FR-4 core material) into a stacked multilayer structure. Signal routing layers may contain vias and metallization used to conduct signals within, for example, a dielectric material. This electrical network may be utilized to maintain electrical communication between at least one embedded passive device module and a semiconductor device or other electrical component (e.g., active components such as transistors) through conductive material in electrical contact with a surface metallization layer, or an external device through an electrical contact located on the periphery of the stacked multilayer structure. [0149] Both conductive and functional layers may be formed from the co-deposition of the alkali silicate material and the nano- or micro-particle composition, having dielectric properties, insulating properties, magnetic properties and adhesion strength as necessary. Further, it is contemplated that standard conductive inks or epoxies (polymer based) may be utilized to form an embedded passive device or device portion. Additionally, plating may be used for electrical interconnect or routing, where a conductive pad or lead could be plated to a conductive ASG (as used for a resistor). Standard PC board processing may be utilized in any stage of the laminate build-up process. It is also contemplated that one or more embedded passive device modules may be applied to pre-formed conductive and functional layers. For instance, a layer of alkali silicate material may be adhered to the top of a layer of an electronic substrate. A layer of alkali silicate material may be formed below a layer of the electronic substrate. The layers may then be connected to embedded passive devices vertically through respective vias and horizontally through traces and patterned to form connectors for the embedded passive device (e.g., patterned to form top and bottom connection pads for an embedded inductor). Additional electronic substrate layers may be added to one or more embedded passive device module layers, including layers containing signal traces, power planes, additional embedded resistors, inductors, or capacitors, or active components such as field effect transistors and integrated circuits. The resulting assembly may, therefore, form the basis of a complete packaged circuit module. [0150] As discussed above, a deposit device may be utilized to deposit or co-deposit at least one of the alkali silicate composite or a particle or nano- or micro-particle composite onto a substrate. Referring to FIGURE 27, a block diagram of an example of a deposit device 1500 that may be utilized to deposit or co-deposit at least one of the alkali silicate composite or a particle or nano- or micro-particle composite onto a substrate is shown. Deposit device 1500 may include a deposit head 1502 for ejecting particle or alkali silicate loaded droplets. Deposit device head 1502 may also include a plurality of depositors (e.g., nozzles or nozzle groups) 1504 - 1510 may be provided in the deposit head. In one embodiment, a depositor may be a micro-piezo depositor including a plurality of micro- piezo deposit structures configured to deposit differing amounts of alkali silicate material and/or particle or nano- or micro-particle composites according to a desired circuit board or electronic substrate structure. In one specific embodiment, one or more nozzle groups may be formed within the deposit head 1502. For instance, a first depositor 1504, a second depositor 1506, a third depositor 1508, and a fourth depositor 1510 may be formed in the lower surface of the deposit head 1502. It is contemplated that deposit device 1500 may include any number of depositors or nozzles as necessary, desired, or achievable based on design constraints. Each of the first depositor 1504, the second depositor 1506, the third depositor 1508, and the fourth depositor 1510 may include a plurality of nozzles 1524-1526 that are ejection openings for ejecting the droplets of each group. A nozzle 1524-1526 may also include a droplet chamber (not shown). Each of the plurality of nozzles 1524-1526 may contain an amount of alkali silicate material or a nano- or micro-particle composition. At least one nozzle may contain a combination of an alkali silicate material and a nano- or micro-particle composition, however, a nano- or micro-particle composition that may not be suspended in alkali silicate material for a great length of time (due, for example, to chemical interactions or particle agglomeration) may be stored and deposited from a dedicated nozzle separate from a nozzle including the alkali silicate material.

[0151] Deposit device 1500 may include a drive unit 1512 further including one or more drive elements 1514, 1516 such as a micro-piezo element or a piezo element or a heater. Drive elements 1514, 1516 may be provided for each nozzle 1524-1526 in order to effect the ejection of a droplet from the nozzle 1524-1526. Driving the drive elements 1514, 1516 (e.g., micro-piezo element) may cause the droplet chamber to expand and contract, thereby ejecting a droplet from the nozzle. A micro-piezo or piezo element may refer to a print element using a piezoelectric crystal (e.g., quartz) that rapidly flexes when current is applied, and forces droplets of material through a nozzle. The deposit head 1502 may also include a deposit head controller 1518 for controlling the driving of the drive elements. Controller 1518 may include a control element 1528 electrically coupled to an individual micro-piezo deposit structure to control the deposit of an amount of alkali silicate material or nano- or micro-particle composite material. A plurality of types of droplets in differing amounts and/or sizes may be deposited by the various depositors (e.g., nozzles or nozzle groups). Thus, deposits of different sizes, shapes, or amounts may be formed on the printed circuit board. [0152] Deposit device 1500 may further include any number of structural elements suitable for providing co-deposition of alkali silicate composite material, particle composite material and/or nano- or micro-particle composite material. Structural elements may include a platform coupled to the one or more depositors 1504-1510 to provide stability and stopping for the drive elements 1514, 1516 when, for example, a drive element contacts a substantially rigid surface, and/or a power supply line providing power to the deposit device 1500.

[0153] In one embodiment, the deposit device 1500 may include a supply 1522 further including a plurality of pressure chambers and cavities (e.g., reservoirs) for loading nano- or micro-particle loaded or alkali silicate material loaded droplets. Supply openings may be formed, corresponding to the drive elements 1514, 1516 (e.g., micro-piezo deposit structure). For instance, each depositor 1504-1510 of the deposit device supply 1522 may include a reservoir for storing the nano- or micro-particle loaded or alkali silicate material loaded droplets. Supply 1522 may provide the stored particle loaded, nano- or micro- particle loaded and/or alkali silicate material loaded droplets to a pressure chamber. The particle loaded, nano- or micro-particle loaded and/or alkali silicate material loaded droplet from the supply 1522 may be introduced to the drive element 1514, 1516 through a particle loaded or alkali silicate material loaded droplet supply tube. A drive signal may be supplied to a drive element 1514, 1516 (e.g., a micro-piezo element) from the controller 1520. The drive element 1514, 1516 may expand and contract, increasing and decreasing the volume of the pressure chamber and thus, the pressure of the deposit material in the pressure chamber in response to the drive signal. In this way, the change in droplet pressure may be utilized to cause a droplet to be ejected from the nozzle.

[0154] Referring to FIGURE 28, a method 1600 for forming an embedded passive device module is shown. The method 1600 may include depositing an amount of alkali silicate material 1602. The method 1600 may also include co-depositing an amount of embedded passive device material with the amount of alkali silicate material 1604. The method 1600 may also include thermally processing the amount of alkali silicate material and the amount of embedded passive device material at a temperature sufficient to cure the amount of alkali silicate material and the amount of embedded passive device material and form a substantially moisture free substrate 1606. The formed substrate may be deposited (e.g., printed) to be in electrical contact with one or more printed circuit board components (e.g., metal electrodes, etc.). The substrate may also be laminated over via a standard substrate lamination process. In additional embodiments, the method 1600 may further include applying a second amount of alkali silicate material substantially onto the substrate 1608. The method 1600 may also include co-depositing a second amount of embedded passive device material with the second amount of alkali silicate material substantially onto the substrate to form a second layer 1610. The method 1600 may also include thermally processing the first layer and the second layer at a temperature sufficient to cure the first layer and the second layer and form a bonded multi-layer substrate. Thermally processing the first layer and the second layer may also include removing substantially all moisture from the first layer and the second layer. In some instances, the method 1600 may further include aligning the first layer and the second layer to allow the first amount of embedded passive device material of the first layer and the second amount of embedded passive device material of the second layer to interact electronically (e.g., form a functioning embedded passive device).

[0155] Method 1600 may also include combining at least one of the first layer or the second layer with at least one signal routing layer (e.g., a capacitive inner layer 1406, copper signal trace, core material (e.g., alkali silicate core material FR-4 core material)) to form a stacked multilayer structure. In additional embodiments, (e.g., in the case of a resistor) conductive alkali silicate material may be utilized to maintain electrical conductivity. In some instances, a deposited layer of alkali silicate material may include embedded passive device material (e.g., suspended nano- or micro-particles) and be deposited as single liquid coating solution.

[0156] The alkali silicate material and the embedded passive device material may be applied via a micro-piezo deposit device including a plurality of nozzles separately loaded with at least one of the alkali silicate material or the embedded passive device material. [0157] The method 1600 may further include applying a third amount of alkali silicate material substantially onto the second layer and co-depositing a third amount of embedded passive device material with the third amount of alkali silicate material substantially onto the second layer to form a third layer. Method 1600 may also include thermally processing the second layer and the third layer may also include removing substantially all moisture from the third layer. It is contemplated that the method 1600 may co-deposit the alkali silicate material and nano- or micro-particle composites (suspensions) to achieve a high density of nano- or micro-particles embedded in the alkali silicate material and create any number of layers to achieve any desired substrate thickness. [0158] Embedded passive device material may include any embedded passive device substance suitable for forming an embedded passive device or structure, including the embedded passive device materials described previously.

[0159] Method 1600 may include applying the alkali silicate material to an electronic substrate to assist in thermal reduction or transfer. Further, method 1600 may include providing a co-deposition of an alkali silicate material as a radiation resistant composite with ceramic or rare earth particles to increase radiation resistance or provide anti-tamper protection. Method 1600 may also include providing a co-deposition of alkali silicate material and one or more optical structures (e.g., fluorescents, optical filters or dopants) for optical interconnect capabilities or functionality within an electronic substrate. [0160] Method 1600 may further provide coating of electronic structures on an electronic substrate with a layer of alkali silicate material. Coating may include coating of embedded passive device structures and/or surface functional coatings or structures. [0161] 3-D Packaging and Interconnection of Electronic Devices [0162] Three dimensional integrated circuit devices can be made by depositing combinations of dielectric and conductive materials in appropriate patterns to form various stacked layers, such as layers comprising electrical components and interconnect layers above, below, or between electrical component layers. Passive components that do not require power (e.g., resistors, capacitors, diodes, inductors, etc.) and active components that are powered (e.g., transistors, integrated circuits, amplifiers, logic gates, etc.) can be provided on a substrate (e.g., a base substrate and/or any of the layers or combination of layers on a base substrate) or integrated into an interconnect substrate to reduce the size and cost of the resulting device. According to some exemplary embodiments, the dielectric and conductive materials can be deposited using piezoelectric driven ink jets. [0163] Referring to FIGURE 29 A, according to various exemplary embodiments, a hermetic thermal coating including an alkali silicate material can be used as a dielectric 1702 in an electrical interconnect layer or integrated circuit device 1700 because it may have dielectric material properties similar to or better than organic and ceramic substrate materials that are typically used. According to one exemplary embodiment, device 1700 includes two of dielectric material 1702, an electrically conductive connection layer 1704 (e.g., a first metal layer, a passive or active electrical component layer, etc.), an electrically conductive connection layer 1706 (e.g., a second metal layer, a passive or active electrical component layer, etc.), a via 1708 to the conductive layer 1704, and a via 1710 to the conductive layer 1706. It is noted that FIGURE 29 is only a single example of an electrical interconnect incorporating an alkali silicate dielectric and according to other exemplary embodiments, the electrical interconnect may include only one dielectric layer 1702 or more than two dielectric layers 1702. According to various exemplary embodiments, passive and active electronic components can be integrated into or embedded beneath or with layers of device 1700 to reduce the size and/or cost of the final assembly. The passive and/or active electronic components can be integrated at one or more layers within device 1700. [0164] Referring to FIGURE 29B, according to various exemplary embodiments, an alkali silicate material can be used as a dielectric in an electrical interconnect layer 1752 of an integrated circuit device 1750. According to one exemplary embodiment, device 1750 includes a base substrate 1754, an electrical component layer 1756 (e.g., a passive or active electrical component layer), electrically conductive connection or interconnection layer 1752 (e.g., a metal layer, a via layer, etc.), and an electrical component layer 1758 (e.g., a passive or active electrical component layer). Electrical component layer 1756 may include active electrical components 1760 and 1762 while electrical component layer 1758 may include passive electrical components 1764 and 1766. Passive electrical component 1764 is electrically coupled to active electrical component 1760 by a via or metal layer 1768 in electrically conductive layer 1752. Passive electrical component 1766 is electrically coupled to active electrical component 1762 by a via or metal layer 1770 in electrically conductive layer 1752. For example, passive electrical component 1766 may be a capacitor having two conductive plates 1772 and 1774 separated by a dielectric 1776, such as an alkali silicate material according to the disclosure herein. Interconnect layer 1752 may comprise conductive and/or insulated portions that may comprise alkali silicate material. For example, conductive portions of layer 1752 may comprise an alkali silicate material having suitable conductive filler particles to provide adequate conductivity. It is noted that according to other exemplary embodiments, components 1760, 1762, 1764, and 1766 may be any combination of active and/or passive electrical components. According to other exemplary embodiments, electrical component layers 1756 and/or 1758 may include only one or more than two passive and/or active electrical components.

[0165] It is noted that FIGURES 29A and B are only examples of devices incorporating an alkali silicate dielectric and according to other exemplary embodiments, the device may include different numbers of dielectric layers. According to further exemplary embodiments, device 1700 or 1750 may include any number of electrically conductive layers or vias and may also include other layers, for example one or more layers of polysilicon. According to other exemplary embodiments, device 1700 or 1750 may include a coating as described with reference to the FIGURES above.

[0166] Once the alkali silicate material is cured it may resist absorption of moisture, thus making it more suitable for use in harsh environments in which humidity absorption can degrade the substrate's mechanical properties and/or modify its electrical performance as compared to organic and ceramic materials. The alkali silicate material may also improve thermal management of the substrate or die to reduce the size of packaging. [0167] The alkali silicate material can be cured at low temperatures compared to ceramic devices, which may reduce residual stress and processing costs. According to various exemplary embodiments, the alkali silicate material may be cured at a temperature less than about 150 degrees Celsius. According to some exemplary embodiments, the alkali silicate material may be cured at a temperature between about 100 degrees Celsius and about 150 degrees Celsius. According to other exemplary embodiments, the alkali silicate material may be cured at any temperature great enough to remove at least a substantial portion of the moisture from the material, for example greater than about 100 degrees Celsius. [0168] According to various exemplary embodiments, the alkali silicate material can be doped with filler materials to control or adjust various properties of the alkali silicate composite. For example, thermal expansion matched filler particles (e.g., glasses, ceramics, metals, etc.) can be added to control the thermal expansion coefficient of the material to reduce the stresses encountered during thermal excursions and/or heating of components during power-on processes. Thermally conductive particles (e.g., diamond, aluminum nitride, boron nitride, silicon carbide, etc.) can be added to give the alkali silicate material a much higher thermal conductivity than can be achieved with typical ceramic substrate materials. Additional particles may be added to improve the long-term resistance to harsh environments of the material. Ferrite or other magnetic particles may be added to the material to induce a magnetic field or counteract a magnetic field within the interconnect. [0169] Referring to FIGURE 30, the device (e.g., device 1700) can be formed using a method 1800, according to an exemplary embodiment. Method 1800 includes a step 1801 where a substrate is provided on which other layers may be deposited. At a step 1802, one or more layers of dielectric material containing an alkali silicate composite (e.g. dielectric material 1702) may be deposited, applied, disposed, formed, or otherwise provided on the substrate (e.g., directly on a base substrate or on or over one or more other layers formed on a base substrate). At a step 1804, electrically conductive connections (e.g., metal layers, passive or active electrical components, etc.) can be deposited or applied onto the layer or layers of dielectric material deposited in step 1802. At a step 1806, vias or through- connections may be formed through one or more layers of the device, for example to form connections to the electrically conductive layers or the dielectric layers. According to some exemplary embodiments, the vias may be formed by etching or masking. According to other exemplary embodiments, the vias may be formed during deposition of the dielectric and conductive layers. The dielectric and conductive layers may be selectively deposited over particularly defined areas leaving through-holes or vias to various layers. [0170] Referring to FIGURES 31-34, according to various exemplary embodiments, the electrical substrate including the alkali silicate material can be fabricated in various ways including spray deposition of combinations of dielectric and conducting materials. For example, the substrate and alkali silicate composite can be formed or applied with a sprayer, ink-jet, or similar device to pattern the electrical interconnect. The sprayer may be a pressure driven sprayer, though other pressure driven devices or sprayers may be used. The ink jet device may comprise an oscillating mechanism such as a piezoelectric membrane, though other ink jet devices or devices comprising an oscillating mechanism may be used. [0171] Referring specifically to FIGURE 31 , a depositor 1900 may deposit or spray a layer of dielectric material 1902 (or other material for use in an electrical interconnect) onto a substrate or other layer 1904 (e.g., an interconnect layer) according to an exemplary embodiment. It is noted that while the FIGURE illustrates deposition of a specific amount of layer 1902, according to other exemplary embodiments the depositor 1900 may deposit a layer of any sinze or may make multiple passes across the layer 1904. [0172] Referring specifically to FIGURE 32, a depositor 1950 may deposit or spray a layer of dielectric material 1906 (or other material for use in an electrical interconnect) onto substrate or other interconnect layer 1904 according to an exemplary embodiment. Depositor 1950 may selectively deposit layer 1906 over predefined areas, for example to leave space for vias or another deposited material. It is noted that while the FIGURE illustrates deposition of a specific amount and in specific regions of layer 1902, according to other exemplary embodiments the depositor 1900 may deposit a layer of any size or may make multiple passes across the layer 1904.

[0173] Referring to FIGURE 33, a block diagram illustrates a depositor 2000 according to an exemplary embodiment. Depositor 2000 includes a supply 2002 that may contain the alkali silicate material, an electrically conductive material or ink, a polysilicon material or ink, etc. Supply 2002 feeds a nozzle 2004, for example an ink-jet or sprayer nozzle, for depositing the supply contents in the electrical interconnect. A controller 2006 is configured to control the amount and location that depositor 2000 sprays the alkali silicate or other material. The controller may comprise a processor, a hardwired circuit, an interface for receiving a remote command, software, or any other controller of past, present, or future design that is capable of controlling deposition of the interconnect layers. [0174] Referring to FIGURE 34, a block diagram illustrates a depositor 2050 according to an exemplary embodiment. Depositor 2050 includes a supply 2052 and a supply 2053 that may contain the alkali silicate material, an electrically conductive material or ink, a polysilicon material and/or ink, etc. Supply 2052 and supply 2053 preferably contain different materials, for example supply 2052 may contain the alkali silicate composite while supply 2053 may contain an electrically conductive ink. Supplies 2052 and 2053 feed a nozzle 2054, for example an ink-jet or sprayer nozzle, for depositing the supply contents in the electrical interconnect. A controller 2006 is configured to control the amount and location that depositor 2000 sprays the alkali silicate or other material as well as control the reservoir or supply from which to use the material. According to other exemplary embodiments, the depositor may include more than two supplies for deposition in the electrical interconnect.

[0175] According to various exemplary embodiments, the depositor and depositing method for depositing the alkali silicate material and other interconnect layers may be any of the deposition systems and methods described with reference to FIGURES 25-28 or otherwise described herein.

[0176] One or more embodiments described herein may be configured to form two- dimensional or three-dimensional stacked multilayer integrated circuit devices or layers thereof (e.g., interconnect layers, electrical component layers, etc.). 3D interconnection technology may enable advanced electronics miniaturization by incorporating signal carrying traces and passive functional components within the topography of the circuit, including vertical surfaces. Through the use of additive processes, device interconnects and passives can be dispensed directly onto integrated circuit components, for example a stacked die assembly. The technology utilizes micro dispense of multiple materials of varying dielectric and conductive properties. According to some exemplary embodiments, the small feature sizes achieved in this process may be enabled by using a 5 -axis motion control, such as Robocasting, as available from Sandia National Laboratories of Albuquerque, New Mexico and an M3D® micro aerosol dispense technology as available from Optomec® of Albuquerque, New Mexico. According to other exemplary embodiments, any depositor capable of spraying or depositing layers of an electrical interconnect and any controller capable of controlling the depositor to deposit the layers may be used. This innovative fabrication technique may reduce the need for traditional substrate and associated lithography tooling, at least for some fabrication steps, while reducing the overall component thickness and design cycle time. The dispensed 3D interconnect method may enable low-cost, rapid implementation of new designs through a no-tool scheme that is well suited for lower volume production. [0177] The 3D interconnect capability, which is enabled by the additive deposition process to route signals vertically, horizontally, or directly to or on top of embedded components within the assembly, may allow the designer flexibility to condense devices into a much smaller volume by allowing components to be placed and interconnected in a non-traditional manner. The technology may allow the component placement to drive the interconnect formation rather than the interconnect formation driving the component placement. In other words, miniaturization may no longer be constrained by the tooling and process intensive printed wiring design rules that limit device functional placement to two dimensions.

[0178] In addition to the potential for significant miniaturization through non-traditional device placement, the interconnect method described above may also offer reliability improvements. Materials used in this method may be cured at or below 150⁰C, thereby minimizing the residual stresses typically created in higher temperature assembly processes such as solder reflow. In one embodiment, the dispensed interconnect process may not utilize solder, and therefore the transition to lead- free processing dictated by legislation for consumer electronics can be improved.

[0179] According to alternative embodiments, the electrical substrate including the alkali silicate material can be fabricated by sequential application of dielectric material followed by patterned interconnect of plated or printed electrically conductive material. In sequential application, interconnect layers can be connected through the use of traditional via formation technologies such as patterned chemical etching or the use of laser ablation followed by plating or the use of electrically conductive fillers. One exemplary embodiment is described with reference to FIGURE 35, in which a portion 3500 of an integrated circuit device is shown. A first layer or substrate 3502 may comprise a semiconductive or insulative material. Electrically conductive traces 3504 may be deposited or formed on layer 3502, for example using a process of ink jet deposition of conductive material, to provide electrical routing between components of the integrated circuit. A second layer or substrate 3506 may be formed or deposited over first layer 3502 and traces 3504. An active component 3508 may be fabricated on or in second layer 3506, which may be formed as an embedded component. Electrically conductive traces 3510 may be deposited or formed on layer 3506 to provide electrical routing between active component 3508 and other components on layer 3502 or other layers. One or more vias 3511 may be formed in second layer 3506 to provide electrical connections between traces 3510 and traces 3504, or between traces 3510 or traces 3504 and one or more components at or between layers 3502 and 3506. A third layer or substrate 3512 may be formed or deposited on or over second layer 3506 and traces 3510. A passive component 3514 may be fabricated on or in third layer 3512, which may be formed as an embedded component. Additional layers and/or electrically conductive traces may be provided above or below any of layers 3502, 3506 and 3512, for example to provide fourth, fifth, and additional layers (e.g., layer N 3518). In this embodiment, a ground plane material 3516 (e.g., electrically conductive) is provided on layer 3512 by a plating process.

[0180] One or more of the layers or portions thereof shown in FIGURE 35 may comprise one of the glass materials or composites described herein, such as an alkali silicate glass material or composite, which may comprise any of the particles described herein. In this exemplary embodiment, each of layers 3502, 3506, 3512 and 3518 may be a dielectric layer comprising an alkali silicate glass material. Traces 3504 and 3510 may be plated and etched or drawn with silver conductive ink on the alkali silicate glass layers, for example, after curing. The passive components 3514 may be similarly drawn with materials that are sprayed on to form patterns (e.g., to form inductors, resistors, capacitosr, etc.), formed by etching patterns out of plated areas on a cured layer of glass, or by placing passive components onto a layer of ASG and then spraying the next layer of ASG to build up around the passive components. Active components 3508 may be placed over or on a layer of ASG material in the assembly and the ASG dielectrical material may be deposited and built up around the active components. Assembly 3500 may then comprise embedded passives and interconnects in which material is placed by spraying ASG composite in layers on and around the embedded passives and/or interconnects. [0181] As utilized herein, the terms "approximately," "about," "substantially", and similar terms are intended to have a broad meaning in harmony with the common and accepted usage by those of ordinary skill in the art to which the subject matter of this disclosure pertains. It should be understood by those of skill in the art who review this disclosure that these terms are intended to allow a description of certain features described and claimed without restricting the scope of these features to the precise numerical ranges provided. Accordingly, these terms should be interpreted as indicating that insubstantial or inconsequential modifications or alterations of the subject matter described and claimed are considered to be within the scope of the invention as recited in the appended claims. [0182] It should be noted that references to relative positions (e.g., "top" and "bottom") in this description are merely used to identify various elements as are oriented in the FIGURES. It should be recognized that the orientation of particular components may vary greatly depending on the application in which they are used.

[0183] For the purpose of this disclosure, the term "coupled" means the joining of two members directly or indirectly to one another. Such joining may be stationary in nature or moveable in nature. Such joining may be achieved with the two members or the two members and any additional intermediate members being integrally formed as a single unitary body with one another or with the two members or the two members and any additional intermediate members being attached to one another. Such joining may be permanent in nature or may be removable or releasable in nature. [0184] It is also important to note that the construction and arrangement of the components as shown in the various exemplary embodiments is illustrative only. Although only a few embodiments have been described in detail in this disclosure, those skilled in the art who review this disclosure will readily appreciate that many modifications are possible (e.g., variations in sizes, dimensions, structures, shapes and proportions of the various elements, values of parameters, mounting arrangements, use of materials, colors, orientations, etc.) without materially departing from the novel teachings and advantages of the subject matter recited in the claims. For example, elements shown as integrally formed may be constructed of multiple parts or elements, the position of elements may be reversed or otherwise varied, and the nature or number of discrete elements or positions may be altered or varied. The order or sequence of any process or method steps may be varied or re-sequenced according to alternative embodiments. Other substitutions, modifications, changes and omissions may be made in the design, operating conditions and arrangement of the various exemplary embodiments without departing from the scope of the present inventions as expressed in the appended claims.

Claims

WHAT IS CLAIMED IS:

1. A device comprising: an amount of an alkali silicate composition; and an amount of nano- or micro-particle composition co-deposited with the amount of alkali silicate composition, the amount of alkali silicate composition and the amount of nano- or micro-particle composition being co-deposited and thermally cured to form a substantially moisture free substrate.

2. The device of claim 1, wherein the alkali silicate composition is an alkali silicate composition comprising: a SiO2/M2O ratio of greater than or equal to about 2.5.

3. The device of claim 1, wherein the nano- or micro-particle composition further comprises: a resistive material nano- or micro-particle composition.

4. The device of claim 1, wherein the nano- or micro-particle composition further comprises: a magnetic material nano- or micro-particle composition.

5. The device of claim 1, wherein the nano- or micro-particle composition further comprises: a capacitive material nano- or micro-particle composition.

6. The device of claim 1, further comprising: at least one additional layer of the alkali silicate composition; and at least additional layer of the co-deposited nano- or micro-particle composition, the at least one additional layer of the alkali silicate composition and the at least one additional layer of the co-deposited nano- or micro-particle composition being co- deposited substantially over the moisture free substrate and thermally cured with the moisture free substrate to form a substantially moisture free multi-layer substrate.

7. A device comprising: a deposit head for depositing an alkali silicate material and a nano- or micro- particle composition onto a substrate, the deposit head further comprising: a plurality of depositors; and a drive unit coupled to each of the plurality of depositors, the drive units further comprising one or more drive elements for depositing a nano- or micro-particle material loaded droplet and an alkali silicate material loaded droplet onto a substrate; a deposit head controller for controlling the driving of the drive elements, the deposit head controller further comprising at least one control element electrically coupled to at least one drive element; and a supply containing a plurality of the nano- or micro-particle material loaded droplet or the alkali silicate material loaded droplet.

8. The device of claim 7, wherein the supply further comprises: a plurality of supply openings, at least one of the plurality of supply openings corresponding to a drive element.

9. The device of claim 7, wherein the drive element comprises: a micro-piezo drive element.

10. The device of claim 7, wherein the plurality of depositors further comprises: at least one nozzle group further comprising a plurality of nozzles corresponding to at least one of the alkali silicate material or the particle composite material.

11. A method for forming an embedded passive device module comprising: depositing a first amount of an alkali silicate material; co-depositing an amount of embedded passive device material with the amount of alkali silicate material; and thermally processing the amount of alkali silicate material and the amount of embedded passive device material at a temperature sufficient to cure the amount of alkali silicate material and the amount of embedded passive device material and form a substantially moisture free substrate.

12. The method of claim 11 , further comprising: depositing the alkali silicate material and co-depositing the amount of embedded passive device material via a micro-piezo deposit device comprising a plurality of nozzles separately loaded with at least one of the alkali silicate material or the embedded passive device material.

13. The method of claim 11 , further comprising: depositing the alkali silicate material and co-depositing the amount of embedded passive device material via a spraying techniques comprising at least one of a forced air spraying technique or an ultrasonic spraying technique.

14. The method of claim 11 , further comprising: applying a second amount of alkali silicate material substantially onto the substrate; and co-depositing a second amount of embedded passive device material with the second amount of alkali silicate material substantially onto the substrate to form a second co-deposited layer.

15. The method of claim 14, further comprising: aligning the substantially moisture free substrate and the second co-deposited layer to allow the amount of embedded passive device material of the substantially moisture free substrate and the second amount of embedded passive device material of the second co-deposited layer to interact electronically.

16. The method of claim 11 , wherein the co-depositing an amount of embedded passive device material further comprises: co-depositing at least one of resistor material, capacitor material, or inductor material.

17. The method of claim 16, wherein the co-depositing at least one of the resistor material, the capacitor material, or the inductor material further comprises: co-depositing a nano- or micro-particle composition of at least one of the resistor material, the capacitor material, or the inductor material.

18. The method of claim 11 , further comprising: forming variable-sized droplets of the alkali silicate material or the embedded passive device material.

19. The method of claim 11 , further comprising: combining the substantially moisture free substrate with at least one signal routing layer to form a stacked multilayer structure.

20. The method of claim 11 , further comprising: coating an electronic structure on an electronic substrate with a layer of the alkali silicate material.

21. A surface, comprising: metal that is exposed to an external environment, at least a portion of the metal having a finish that is prone to whiskering; and an alkali silicate glass based coating at least partially covering the metal.

22. The surface of claim 21, wherein the finish is tin, cadmium, or zinc.

23. The surface of claim 21 , wherein the surface is a part of an electronic assembly comprising: an electronic device mounted on a substrate by at least one solder joint or other electrical interconnect; an alkali silicate glass based coating at least partially covering at least one solder joint or electrical interconnect.

24. The electronic assembly of claim 23, wherein the metal within the assembly is at least partially composed of tin, cadmium, or zinc.

25. The electronic assembly of claim 23, wherein the coating covers at least a portion of the metal within the electronics assembly.

26. The electronic assembly of claim 23, wherein the electronic device is at least one of an integrated circuit, a resistor, a capacitor, a diode, a light emitting diode, an inductor, and a photovoltaic cell.

27. The electronic assembly of claim 23, wherein the coating is configured to reduce interaction between the solder joint or electrical interconnect and an environment around the surface, whereby the metal is inhibited from oxidizing, whiskering, or corroding.

28. A method for inhibiting the oxidation of a solder joint or electrical interconnect of an electronic device, comprising: applying an alkali silicate glass based coating to the solder joint or electrical interconnect.

29. A coating for reducing interaction between a surface and the environment around the surface, comprising: an alkali silicate glass material configured to protect the surface from environmental corrosion due to water or moisture.

30. The coating of claim 29, wherein the alkali silicate glass material is doped with a first element to affect radiation passing through the coating.

31. The coating of claim 30, wherein the radiation is at least one of ultraviolet, x- ray, gamma ray, and radio wave radiation.

32. The coating of claim 30, wherein the first element comprises at least one of nanoparticles, a chemical additive, ceramic particles, fluorescing particles, magnetic materials, rare earth materials, lanthanide materials, and actinide materials.

33. The coating of claim 32, wherein the surface is a surface of a solar cell, the coating is at least partially transparent.

34. The coating of claim 32, wherein fluorescing particles block ultraviolet light and retransmit usable light to a solar cell.

35. The coating of claim 32, wherein the surface is a surface of a light emitting diode, the coating is at least partially transparent, and fluorescing particles absorb light from the light emitting diode and retransmit light at a different wavelength.

36. The coating of claim 35, wherein the fluorescing particles are nanophosphors.

37. The coating of claim 29, wherein the surface is a surface of a solar cell, a window, a sealing surface between two materials, a light emitting diode, or an electronic device.

38. A coating for reducing corrosion of a solar cell, comprising: an alkali silicate glass material configured to protect the solar cell from environmental corrosion due to water or moisture.

39. The coating of claim 38, wherein the alkali silicate glass material is configured to provide protection to the solar cell from ultraviolet radiation.

40. The coating of claim 39, wherein the alkali silicate glass material is doped with fluorescing rare earth oxide nanoparticles that absorb UV radiation and emit or fluoresce a visible wavelength that the solar cell can convert into electrical energy.

41. The coating of claim 38, wherein the alkali silicate glass material is an anti- reflective material configured to improve light transmission into the solar cell.

42. The coating of claim 41, wherein a refractive index of the alkali silicate glass material may be modified by a dopant or by modifying the alkali silicate glass chemistry.

43. The coating of claim 41 , further comprising multiple layers of alkali silicate glass material, each layer of alkali silicate glass material having a different refractive index.

44. A method for improving moisture durability in a liquid cooling pipe, comprising: providing a first liquid in the liquid cooling pipe to clean the liquid cooling pipe; providing an alkali silicate glass material such that at least a portion of an interior of the liquid cooling pipe is coated with the alkali silicate glass material; and curing the alkali silicate glass material.

45. An integrated circuit, comprising: a substrate; and a dielectric material, the dielectric material comprising an alkali silicate glass material.

46. The integrated circuit of claim 45, wherein the alkali silicate glass material comprises thermally conductive particles.

47. The integrated circuit of claim 45, wherein the alkali silicate glass material comprises thermal expansion matching particles.

48. The integrated circuit of claim 45, further comprising: an electrical interconnect layer disposed on the substrate, the interconnect layer comprising at least the dielectric material.

49. The integrated circuit of claim 48, further comprising: at least two layers having electrical components formed therein, wherein the interconnect layer provides electrical connections between an electrical component on a first of the at least two layers and an electrical component on a second of the at least two layers.

50. The integrated circuit of claim 49, further comprising: at least one via between the interconnect layer and each of the at least two layers.

51. The integrated circuit of claim 48, wherein the interconnect layer further comprises at least one of passive and active electronic components.

52. The integrated circuit of claim 48, wherein the interconnect layer is capable of being manufactured with processing temperatures of than or equal to 150 degrees Celsius.

53. A device, comprising : a substrate; and an interconnect layer disposed on the substrate comprising at least one dielectric material, the dielectric material comprising an alkali silicate glass material.

54. The device of claim 53, wherein the alkali silicate glass material comprises thermally conductive particles.

55. The device of claim 53, wherein the alkali silicate glass material comprises thermal expansion matching particles.

56. The device of claim 53, wherein the interconnect layer comprises at least one electrically conductive connection.

57. The device of claim 56, further comprising: at least one via disposed between the interconnect layer and at least one other layer.

58. The device of claim 53, further comprising: at least one embedded electronic component disposed beneath at least one layer disposed on the substrate.

59. The device of claim 53, wherein at least the interconnect layer is capable of being manufactured with processing temperatures less than or equal to 150 degrees Celsius.

60. A method for forming an integrated circuit, comprising: providing a substrate; and depositing an alkali silicate material over the substrate using at least one of a pressure driven sprayer and an oscillating mechanism.

61. The method of claim 60, further comprising: doping the alkali silicate material with thermally conductive particles.

62. The method of claim 60, further comprising: doping the alkali silicate material with thermal expansion matching particles.

63. The method of claim 60, wherein the alkali silicate material is configured as a dielectric material.

64. The method of claim 60, wherein the alkali silicate material is a part of an electrical interconnect layer.

65. The method of claim 64, wherein the interconnect layer is processed at temperatures of less than or equal to 150 degrees Celsius.

66. The method of claim 64, further comprising: depositing at least one electrically conductive connection over the alkali silicate material configured as a dielectric material.

67. The method of claim 66, further comprising: forming at least one via to the electrically conductive connection.

68. The method of claim 60, further comprising: forming at least one embedded passive and/or active electronic component beneath at least one layer disposed on the substrate.

70. The method of claim 60, wherein the oscillating mechanism comprises a piezoelectric membrane used in an ink-jet device.