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WO2010003629A3 - Thermoelectric apparatus and methods of manufacturing the same - Google Patents

Thermoelectric apparatus and methods of manufacturing the same Download PDF

Info

Publication number
WO2010003629A3
WO2010003629A3 PCT/EP2009/004897 EP2009004897W WO2010003629A3 WO 2010003629 A3 WO2010003629 A3 WO 2010003629A3 EP 2009004897 W EP2009004897 W EP 2009004897W WO 2010003629 A3 WO2010003629 A3 WO 2010003629A3
Authority
WO
WIPO (PCT)
Prior art keywords
type
semiconductor material
surface regions
thermoelectric apparatus
pair
Prior art date
Application number
PCT/EP2009/004897
Other languages
French (fr)
Other versions
WO2010003629A2 (en
Inventor
Volker Schmidt
Stephan Senz
Ulrich GÖSELE
Original Assignee
Max-Planck-Gesellschaft Zur Förderung Der Wissenschaft E. V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Max-Planck-Gesellschaft Zur Förderung Der Wissenschaft E. V. filed Critical Max-Planck-Gesellschaft Zur Förderung Der Wissenschaft E. V.
Publication of WO2010003629A2 publication Critical patent/WO2010003629A2/en
Publication of WO2010003629A3 publication Critical patent/WO2010003629A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

A thermoelectric apparatus comprises at least one pair of adjacent portions of p-type and n-type semiconductor material each portion having respective, generally oppositely disposed, first and second surface regions. Said first surface regions of each said pair are coupled either directly, or indirectly via a metallic conductor, or indirectly via a doped electrically conductive semiconductor and said second surface regions are electrically connectable to an external circuit. The p-type and n-type semiconductor material comprises porous semiconductor material which allows a high dimensionless figure of merit to be achieved for either thermo-electrical power generation or thermo electrical cooling.
PCT/EP2009/004897 2008-07-08 2009-07-07 Thermoelectric apparatus and methods of manufacturing the same WO2010003629A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP08012324 2008-07-08
EP08012324.3 2008-07-08
EP08022556 2008-12-30
EP08022556.8 2008-12-30

Publications (2)

Publication Number Publication Date
WO2010003629A2 WO2010003629A2 (en) 2010-01-14
WO2010003629A3 true WO2010003629A3 (en) 2010-05-27

Family

ID=41382094

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/004897 WO2010003629A2 (en) 2008-07-08 2009-07-07 Thermoelectric apparatus and methods of manufacturing the same

Country Status (1)

Country Link
WO (1) WO2010003629A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9419198B2 (en) 2010-10-22 2016-08-16 California Institute Of Technology Nanomesh phononic structures for low thermal conductivity and thermoelectric energy conversion materials
US20130019918A1 (en) * 2011-07-18 2013-01-24 The Regents Of The University Of Michigan Thermoelectric devices, systems and methods
US8697549B2 (en) 2011-08-17 2014-04-15 Varian Semiconductor Equipment Associates, Inc. Deposition of porous films for thermoelectric applications
WO2013109729A1 (en) 2012-01-17 2013-07-25 Silicium Energy, Inc. Systems and methods for forming thermoelectric devices
WO2013149205A1 (en) 2012-03-29 2013-10-03 California Institute Of Technology Phononic structures and related devices and methods
CN104756268B (en) 2012-08-17 2017-10-24 美特瑞克斯实业公司 System and method for forming thermoelectric device
WO2014070795A1 (en) 2012-10-31 2014-05-08 Silicium Energy, Inc. Methods for forming thermoelectric elements
EP3123532B1 (en) 2014-03-25 2018-11-21 Matrix Industries, Inc. Thermoelectric devices and systems
TW201809931A (en) 2016-05-03 2018-03-16 麥崔克斯工業股份有限公司 Thermoelectric devices and systems
USD819627S1 (en) 2016-11-11 2018-06-05 Matrix Industries, Inc. Thermoelectric smartwatch

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0455051A2 (en) * 1990-04-20 1991-11-06 Matsushita Electric Industrial Co., Ltd. Thermoelectric semiconductor having a porous structure deaerated into a vacuum and thermoelectric panel
JPH1041556A (en) * 1996-07-25 1998-02-13 Mitsubishi Heavy Ind Ltd Porous thermoelectric semiconductor and its manufacture
JP2000077730A (en) * 1998-08-28 2000-03-14 Sumitomo Metal Ind Ltd Porous thermoelectric conversion element
EP1083610A1 (en) * 1999-03-10 2001-03-14 Sumitomo Special Metals Company Limited Thermoelectric conversion material and method of producing the same
JP2001210879A (en) * 1999-11-17 2001-08-03 Sumitomo Metal Ind Ltd High-output porous thermoelectric conversion element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0455051A2 (en) * 1990-04-20 1991-11-06 Matsushita Electric Industrial Co., Ltd. Thermoelectric semiconductor having a porous structure deaerated into a vacuum and thermoelectric panel
JPH1041556A (en) * 1996-07-25 1998-02-13 Mitsubishi Heavy Ind Ltd Porous thermoelectric semiconductor and its manufacture
JP2000077730A (en) * 1998-08-28 2000-03-14 Sumitomo Metal Ind Ltd Porous thermoelectric conversion element
EP1083610A1 (en) * 1999-03-10 2001-03-14 Sumitomo Special Metals Company Limited Thermoelectric conversion material and method of producing the same
JP2001210879A (en) * 1999-11-17 2001-08-03 Sumitomo Metal Ind Ltd High-output porous thermoelectric conversion element

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
KATSUKI FUTOSHI ET AL: "Development of a thermoelectric power generation system using reciprocating flow combustion in a porous FeSi2 element", REVIEW OF SCIENTIFIC INSTRUMENTS, AIP, MELVILLE, NY, US, vol. 72, no. 10, 1 October 2001 (2001-10-01), pages 3996 - 3999, XP012038868, ISSN: 0034-6748 *
MATHUR R G ET AL: "Thermoelectric power in porous silicon", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 83, no. 11, 1 June 1998 (1998-06-01), pages 5855 - 5857, XP012043929, ISSN: 0021-8979 *
REDDY ET AL: "Open porous foam oxide thermoelectric elements for hot gases and liquid environments", ENERGY CONVERSION AND MANAGEMENT, ELSEVIER SCIENCE PUBLISHERS, OXFORD, GB, vol. 48, no. 4, 24 February 2007 (2007-02-24), pages 1251 - 1254, XP005903555, ISSN: 0196-8904 *
YAMAMOTO A ET AL: "Thermoelectric transport properties of porous silicon nanostructure", EIGHTEEN INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 1999, PISCATAWAY, NJ, USA, IEEE, US, 29 August 1999 (1999-08-29), pages 428 - 431, XP010379414 *

Also Published As

Publication number Publication date
WO2010003629A2 (en) 2010-01-14

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