WO2009113149A1 - Device for measuring pattern length and method for measuring pattern length - Google Patents
Device for measuring pattern length and method for measuring pattern length Download PDFInfo
- Publication number
- WO2009113149A1 WO2009113149A1 PCT/JP2008/054295 JP2008054295W WO2009113149A1 WO 2009113149 A1 WO2009113149 A1 WO 2009113149A1 JP 2008054295 W JP2008054295 W JP 2008054295W WO 2009113149 A1 WO2009113149 A1 WO 2009113149A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- edge
- pattern
- measurement
- profile
- value
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 36
- 238000005259 measurement Methods 0.000 claims abstract description 137
- 238000010894 electron beam technology Methods 0.000 claims abstract description 20
- 238000012545 processing Methods 0.000 claims description 13
- 238000013461 design Methods 0.000 claims description 12
- 238000012935 Averaging Methods 0.000 claims description 10
- 238000009499 grossing Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000001514 detection method Methods 0.000 description 22
- 238000010586 diagram Methods 0.000 description 12
- 238000004364 calculation method Methods 0.000 description 10
- 238000001878 scanning electron micrograph Methods 0.000 description 9
- 238000003708 edge detection Methods 0.000 description 5
- 238000000691 measurement method Methods 0.000 description 5
- 239000003550 marker Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 102220096696 rs62625272 Human genes 0.000 description 3
- 102220348730 c.182C>G Human genes 0.000 description 2
- 102200119143 c.185C>G Human genes 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 102220199802 rs1057520211 Human genes 0.000 description 2
- 102200025554 rs730882050 Human genes 0.000 description 2
- 102220257887 rs746582207 Human genes 0.000 description 2
- 102220583827 Cellular tumor antigen p53_P67R_mutation Human genes 0.000 description 1
- 102220417885 c.197C>G Human genes 0.000 description 1
- 102220417892 c.200C>T Human genes 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 102220222026 rs1060500965 Human genes 0.000 description 1
- 102220257863 rs1553637369 Human genes 0.000 description 1
- 102220200718 rs375401970 Human genes 0.000 description 1
- 102200110486 rs62654397 Human genes 0.000 description 1
- 102200110490 rs62654397 Human genes 0.000 description 1
- 102220214823 rs730881812 Human genes 0.000 description 1
- 102200004934 rs77596424 Human genes 0.000 description 1
- 102220075964 rs796052478 Human genes 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical, image processing or photographic arrangements associated with the tube
- H01J37/222—Image processing arrangements associated with the tube
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
- G03F1/86—Inspecting by charged particle beam [CPB]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24571—Measurements of non-electric or non-magnetic variables
- H01J2237/24578—Spatial variables, e.g. position, distance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24592—Inspection and quality control of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2814—Measurement of surface topography
- H01J2237/2816—Length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
Definitions
- the present invention relates to a pattern length measuring apparatus and a length measuring method using an electron beam, and more particularly, to a pattern length measuring apparatus and a pattern length measuring method capable of measuring the distance between pattern edges with good reproducibility.
- a scanning electron microscope Measured by a scanning electron microscope as a pattern line width measuring method.
- incident electrons are irradiated while being scanned within an electron beam scanning range, secondary electrons emitted from a sample are acquired through a scintillator, and the amount of electrons acquired is converted into luminance to obtain an image. Data is acquired and displayed on the display device.
- the distance between the edges of the two patterns is calculated from the value of the acquired image data. It is determined whether or not the line width of the pattern and the distance between the patterns are within an allowable error range, which is used as a criterion for determining whether the photomask quality is good or as process feedback information to the previous process.
- the measurement of the line width of patterns and the distance between patterns is important in the photomask manufacturing process, and various techniques for measuring the line width and the like have been proposed.
- the position where the gradient of luminance corresponding to the amount of secondary electrons is maximized is set as the edge position of the pattern.
- the edge detection in which the position where the secondary electron signal takes the minimum value is regarded as the edge position. A method is disclosed.
- the position where the gradient of luminance is maximum is set as the edge position, or the position where the secondary electron signal takes the minimum value is set as the edge.
- the position method is adopted.
- the edge measurement range is widened and the edge position is determined using a plurality of detection values.
- the edge position is detected with good reproducibility even if the area designated as the measurement target is slightly shifted.
- the present invention has been made in view of the problems of the prior art, and an object thereof is to stably detect the edge positions of a pattern and to measure the distance between the pattern edges with high reproducibility and accuracy. It is to provide a length measuring device and a pattern length measuring method.
- the above-described problems include an electron beam irradiation unit that irradiates an electron beam while scanning the sample, and the pattern based on the amount of electrons generated from the sample on which the pattern is formed by the electron beam irradiation.
- An image data acquisition unit for acquiring an image
- a measurement target region setting unit for setting a pair of measurement regions including an edge of the image of the pattern, and detecting the edge shape of the pattern in the measurement region, and the pair of measurement regions
- a control unit that calculates a distance between the edges of the pattern in the pattern, and the control unit is a flat part of the edge profile in which the edge of the pattern in the measurement region is indicated by the position coordinates of the measurement points at a predetermined interval And the average position of the flat portion is used as the edge position of the pattern in the measurement region.
- the control unit when the flat portion is not detected, is a value obtained by subtracting a predetermined value assumed to be curved when a pattern is formed from a design value of the pattern width.
- the edge profile may be averaged by calculating an edge characteristic curve, and the position of the peak value of the edge characteristic curve may be set as the edge position of the pattern.
- the control unit has a y-coordinate value of the edge position of the pattern in one measurement region of the pair of measurement regions facing in the y-axis direction.
- the y coordinate value of the edge position of the pattern in the other measurement region is y2, and when y1> y2, y1-y2 may be the distance between the edges in the y-axis direction.
- Is the x coordinate value of the edge position of the pattern in one measurement region of the pair of measurement regions facing in the x-axis direction, and the x coordinate value of the edge position of the pattern in the other measurement region is
- x2-x1 may be the distance between the edges in the x-axis direction
- the control unit averages the edge profile with a predetermined number of measurement points.
- smoothing the pair To detect the shortest distance between the edge of the pattern in one measurement area and the edge of the pattern in the other measurement area using the position coordinates of each measurement point of the smoothed edge of the pattern in the fixed area It may be.
- the flat portion in the measurement between the edges of the pattern, is detected from the edge profile that represents the shape of the edge of the pattern in the designated measurement area by the position coordinates, and the average position is calculated as the edge position. ing.
- the edge profile is differentiated, and the position where the differential value is first zero is obtained as the start position of the flat portion and the position where the differential value is finally zero as the end position. Can do.
- the profile of the flat portion estimated from the design value of the pattern width is moved and averaged to obtain an edge characteristic curve (moving average profile). And the peak position is calculated as the edge center position.
- the moving average width when performing the moving average uses the length of the flat portion of the edge of the pattern, the center position of the flat portion of the edge can be uniquely obtained from the calculated edge characteristics. Then, the distance between the edges of the pattern in the pair of designated measurement areas is calculated using the edge position uniquely acquired. Thereby, it is possible to prevent the position of the edge from being changed due to the shift of the measurement region, and it is possible to calculate the distance between the edges with high reproducibility.
- the pattern length measuring method includes a step of obtaining an image of a pattern of a measurement target region, and an edge profile in which the edge of the pattern in the measurement target region is indicated by position coordinates of measurement points at a predetermined interval.
- the step of detecting the flat portion and the step of determining the edge position are performed when a pattern is formed from a design value of the width of the pattern. Calculating an edge characteristic curve by moving and averaging the edge profile with a value obtained by subtracting a predetermined value assumed to be curved, and determining a peak value position of the edge characteristic curve as an edge position of the pattern You may make it be.
- the step of detecting the distance between the edges includes the y-coordinate value of the edge position in one of the pair of measurement areas facing in the y-axis direction. Is y1, the y-coordinate value of the edge position in the other measurement region is y2, and when y1> y2, y1-y2 is the distance in the y-axis direction between the edges.
- the step of detecting the distance between the edges the x-coordinate value of the edge position in one measurement region of the pair of measurement regions facing in the x-axis direction is x1, and in the other measurement region
- the step may be to set x2-x1 as the distance between the edges in the x-axis direction, and the distance between the edges is detected.
- Step is said edge
- the average of the profile is smoothed at a predetermined number of measurement points, and each coordinate position of the smoothed edge of the pattern in the pair of measurement areas is used to measure the edge of the pattern in one measurement area and the other measurement. And detecting a shortest distance between the edges of the pattern in the region.
- FIG. 1 is a configuration diagram of a scanning electron microscope used in an embodiment of the present invention.
- 2A to 2D are explanatory diagrams of electronic images and profiles acquired by the signal processing unit.
- FIGS. 3A to 3C are diagrams for explaining a ROI for designating a pattern to be measured and a measurement target region.
- FIG. 4 is a diagram for explaining the relationship between the edge shape and the moving average profile.
- 5A to 5D are diagrams for explaining the detection accuracy of the edge position with respect to the value of the moving average width.
- FIGS. 6A to 6H are diagrams showing examples of opposing edge shapes.
- FIG. 7 is a diagram for explaining edge shape determination.
- FIG. 8 is a flowchart illustrating an example of processing for calculating the distance between edges.
- FIG. 9 is a flowchart illustrating an example of processing for detecting the edge position of the pattern in the ROI.
- FIGS. 10A to 10D are diagrams for explaining a method for detecting an edge position in the ROI.
- FIG. 1 is a configuration diagram of a scanning electron microscope according to the present embodiment.
- the scanning electron microscope 100 includes an electronic scanning unit 10, a signal processing unit 30, an image display unit 40, a measurement target region setting unit 50, a storage unit 55, an electronic scanning unit 10, a signal processing unit 30, and an image.
- the display unit 40, the measurement target region setting unit 50, and the control unit 20 that controls each unit of the storage unit 55 are roughly classified.
- the control unit 20 includes a profile creation unit 21, a differential profile creation unit 22, an edge detection unit 23, and an inter-edge distance measurement unit 24.
- the electron scanning unit 10 includes an electron gun 1, a condenser lens 2, a deflection coil 3, an objective lens 4, a moving stage 5, and a sample holder 6.
- the charged particles 9 irradiated from the electron gun 1 are irradiated to the sample 7 on the moving stage 5 through the condenser lens 2, the deflection coil 3 and the objective lens 4.
- a charged particle 9 (primary electron beam) is irradiated onto the sample 7 while being scanned two-dimensionally, and secondary electrons emitted from the irradiated part are detected by an electron detector 8 composed of a scintillator or the like.
- the detected amount of secondary electrons is converted into a digital amount by the AD converter of the signal processing unit 30 and stored in the storage unit 55 as image data.
- the image data is converted into a luminance signal and displayed on the image display unit 40.
- the image data is arranged on the two-dimensional array so as to have the same arrangement as the scanning position of the primary electron beam on the sample 7, and a two-dimensional digital image is obtained.
- Each pixel (pixel) of the two-dimensional digital image represents luminance data with an 8-bit information amount.
- the electronic deflection amount of the deflection coil 3 and the image scan amount of the image display unit 40 are controlled by the control unit 20. Further, the control unit 20 stores a program for executing the inter-edge measurement.
- the profile creation unit 21 creates a line profile representing the luminance signal of the SEM image data in the specified range.
- the line profile represents a luminance signal corresponding to the amount of secondary electrons, and is considered to reflect the cross-sectional shape of the measurement pattern.
- the differential profile creation unit 22 performs a primary differentiation process on the line profile to create a primary differential profile.
- the edge detection unit 23 detects the edge of the pattern from the line profile and the primary differential profile. Further, as will be described later, an edge profile indicating the shape of the edge is created, and the edge profile is moved and averaged by a predetermined moving average width to create a moving average profile. The edge position is detected based on this moving average profile.
- the inter-edge distance measuring unit 24 measures the distance between the edges of the patterns included in the pair of ROIs set by the measurement target region setting unit 50. The distance between the edges of the two patterns in the x-axis or y-axis direction and the shortest distance between the edges of the two patterns are measured.
- a sample in which a wiring pattern 51 is formed on a photomask substrate 50 is used.
- a part of the sample 7 has a planar shape as shown in FIG.
- a portion surrounded by a broken line 52 indicates an observation region of the scanning electron microscope 100.
- the electron quantity such as secondary electrons obtained by scanning the electron beam on the sample shown in FIG. 2A is detected by the electron detector 8, and the detected electron quantity is converted into a luminance signal.
- An example of the SEM image displayed by synchronizing the scanning of the electron beam and the scanning of the CRT of the display device is shown.
- the length measurement area is an area having a width H of 400 pixels and a length L, for example. This region is selected by the operator by the upper line marker LM1, the lower line marker LM2, the left line marker LM3, and the right line marker LM4.
- the H direction of the length measurement area is divided from the extracted SEM image pixel data, and a line profile corresponding to the luminance distribution is obtained for the divided area.
- a noise component can be reduced by performing a smoothing process with a width of, for example, 3 pixels in the length L direction.
- FIG. 2C is a diagram showing a line profile corresponding to the amount of secondary electrons emitted from the sample obtained when the electron beam is irradiated along the line II in FIG. is there.
- the line profile (contrast profile) changes abruptly at the edge of the pattern.
- the line profile is differentiated to obtain the maximum peak and the minimum peak of the differential signal amount.
- the differential waveforms C1 and C2 are obtained by interpolating between the plurality of differential signals Dx before and after the peak to obtain the first peak P1 and the second peak P2 with a resolution of 1/100.
- the peak position of is calculated.
- the width W1 of the line pattern is obtained as the distance between the first peak P1 and the second peak P2.
- the above processing is performed in each divided area, and the average value of the pattern widths calculated in each area is used as a length measurement value, whereby a more accurate line pattern width W1 can be obtained.
- FIG. 3 is a diagram showing an example of measuring the distance between the edges of the pattern.
- FIGS. 3A to 3C each show a part of an SEM image of a pattern formed on a sample. If the vertical direction in FIG. 3 is the y-axis direction and the horizontal direction is the x-axis direction, for example, FIG. 3A shows patterns P11 and P12 facing in the y-axis direction, and the measurement target range is the ROI box (ROI11). And the ROI 12), the distance between the edges of these patterns is measured.
- FIG. 3B shows patterns P21 and P21 that face each other in the y-axis direction and are shifted in the x-axis direction.
- FIG. 3C shows patterns P31 and P32 facing each other in the x-axis direction.
- the flat portion when measuring the distance between the end portions of two patterns, the flat portion has a short length, so a wide range of data cannot be obtained, and accurate measurement is performed. Is difficult.
- the flat part when the flat part is short as described above, it is applied to the corner with a slight deviation of the ROI box, and when the corner is curved unlike the design value, it depends on whether or not the ROI box is applied to the curved part. The value of the edge position changes greatly. As a result, the detection distance between the edges is different for each length measurement, and the reproducibility of the distance detection between the edges is deteriorated.
- the inventor of the present application paid attention to the use of the shape of the edge portion in order to uniquely detect the edge position. That is, it was noted that the range of the flat part or the center position of the flat part can be uniquely obtained by analyzing the flat measurement part and the edge shapes at both ends thereof.
- the measurement target region (ROI11 and ROI12) is specified including the curved portion of the corner portion. It will be described below that the range of the flat part to be measured or the center position of the flat part is uniquely calculated from the edge profile of the pattern in the measurement target region (also referred to as ROI box) set in this way.
- FIG. 4 is a view showing an example of the tip portion of the pattern. Also, the broken line L1 in FIG. 4 indicates the design value, and the solid line L2 indicates the edge profile of the formed pattern. As shown in FIG. 4, the actually formed pattern is not formed according to the design value, and in particular, the corner is formed with roundness.
- a profile obtained by differentiating the profile of the edge shape of L2 is obtained, and the position where the differential value becomes zero first is the start position of the flat portion, and the position where the differential value finally becomes zero is the end position of the flat portion.
- the distance between the two points can be determined as the range of the flat portion.
- the position obtained by averaging the range of the flat portion is used as the edge position.
- the length of the portion of the pattern edge that can be estimated to be flat is set as the moving average width, and the moving average profile is created by moving the edge profile using the moving average width.
- the length of the portion of the edge of the pattern that can be estimated to be flat is a value obtained by subtracting the length assumed to form a corner when the pattern is formed from the design value of the edge. For example, the length assumed to be formed in a curved shape is 50 nm regardless of the length of the edge.
- the edge profile represents the edge shape by indicating the edge in position coordinates for each measurement point at a predetermined interval.
- a moving average process is performed on each measurement point of the edge profile. That is, when the moving average width is calculated to be, for example, 100 nm, if the number of measurement points of the edge profile corresponding to 100 nm is, for example, 36, averaging is performed at the 36 points before and after each measurement point of the edge profile.
- the moving average profile L3 has a peak value, and the position of the peak value corresponds to the center of the flat portion of the edge. This position is called the center edge position at the edge of the pattern in the measurement target region.
- the moving average width is the optimum value, that is, the width of the flat portion of the edge of the measurement target range, the alignment position and the average position can be calculated simultaneously.
- the moving average width it is difficult to accurately predict the length of the curved portion of the corner of the pattern, and it is difficult to set the moving average width to an optimum value.
- FIG. 5A shows an example of a pattern whose width in the x direction is W5.
- the length of the flat portion of the edge of this pattern is the length obtained by subtracting the curved length of the corner portion of the pattern, and the optimum moving average width W is obtained.
- FIG. 5B shows a moving average profile m1 obtained by moving average with a moving average width W5 larger than the optimum moving average width W with respect to the edge profile E1 of FIG.
- the moving average profile m1 has a peak value
- the y coordinate value is different from the actual y coordinate value
- a difference d5 occurs.
- An error occurs in the (x, y) coordinate value (also referred to as an average position) of the center position of the edge, and the accuracy of the average position is deteriorated.
- FIG. 5 (c) shows a moving average profile m2 obtained by moving and averaging the edge profile E1 with the optimum moving average width W.
- the peak position of the moving average profile m2 indicates the center of the edge.
- FIG. 5D shows a case where the edge profile E1 is moving averaged with a moving average width W6 smaller than the optimum moving average width W.
- the moving average profile m3 has a flat portion with a width d6 in which the y coordinate value is constant without taking a peak value. Therefore, the x coordinate value (also referred to as alignment position) of the edge cannot be uniquely determined. Therefore, the accuracy of the alignment position is deteriorated.
- the alignment position and the average position can be calculated with high accuracy by separately calculating the alignment position and the average position as follows.
- the moving average width is set to a value W5 larger than the optimum value W, and the moving average width W5 is used to average the edge profile.
- the moving average width W5 is, for example, a pattern width.
- the average value of the y coordinate of the edge profile E1 between ⁇ Wm / 2 and + Wm / 2 is obtained with respect to the x coordinate specified by the alignment position calculation.
- Wm is a value that considers the variation in the width of the flat portion in the actual SEM image, and is preferably a value close to the optimum value W. In this way, the coordinate value (x, y) of the average position is calculated.
- the shape of the edge to be measured is not limited to a convex shape, but may be a concave shape or a flat shape. Therefore, detection of the edge position corresponding to the shape of the edge will be described below.
- FIG. 6 shows an example of the shape of opposing edges.
- FIG. 6A shows a case where the end portions of the left and right patterns P61L and P61R are convex
- FIG. 6B shows a case where the end portions of the left and right patterns P62L and P62R are concave.
- FIGS. 6C and 6D show the case where one of the left and right patterns (P63L, P63R, P64L, P64R) is convex and the other is concave.
- FIGS. 6E and 6F show the case where one of the left and right patterns (P65L, P65R, P66L, and P66R) is convex and the other is flat
- FIGS. 6G and 6H Indicates a case where one of the left and right patterns (P67L, P67R, P68L, P68R) is concave and the other is flat.
- the peak of the moving average profile becomes convex in the + x direction.
- the peak of the moving average profile is convex in the ⁇ x direction.
- the peak of the moving average profile is convex in the ⁇ x direction.
- the peak of the moving average profile is convex in the ⁇ x direction.
- the edge when the edge is a straight line, a peak value cannot be obtained even if moving average is performed, and the center edge is obtained using the peak value of the moving average profile. The position cannot be detected.
- the position coordinates of the center edge position of the opposing convex edge are used. For example, in the case of FIG. 6E, when the center edge position of the left pattern P65L is C65L (x1, y1) and the x coordinate of the right pattern P65R is x2, the center edge of the right straight edge Let position C65R be (x2, y1). Similarly, in the case of FIGS. 6F to 6H, the center edge position is detected.
- FIG. 7 shows a part of the edge E in the measurement target region.
- the edge positions detected by dividing the entire edge E into three parts are respectively A (xa, ya), B (xb, yb), and C (xc, yc).
- A xa, ya
- B xb, yb
- C xc, yc
- the shape of a pair of edges designated as described above is determined, an edge profile is calculated, a moving average profile indicating edge characteristics is created, and a uniquely determined edge position is detected.
- the tip when measuring the distance between edges and the edge length is short like the tip of the line pattern, first specify the tip as the measurement target area, An edge profile is created based on the position coordinates of the edge shape of the pattern in the region. A flat portion is detected from the edge profile, and the average position is calculated as the edge position. As one method for detecting the flat portion, the edge profile is differentiated, and the position where the differential value is first zero is obtained as the start position of the flat portion and the position where the differential value is finally zero as the end position. Can do. In addition, when a flat portion cannot be detected because there is no point where the differential value becomes zero, the profile of the flat portion estimated from the design value of the pattern width is moved and averaged to obtain an edge characteristic curve (moving average profile).
- the peak position is calculated as the edge center position.
- the center edge position is calculated for each pattern of the pair of designated measurement target areas, and the distance between the center edges is defined as the distance between the edges. Thereby, it is possible to prevent the position of the edge from being different due to the shift of the measurement target region, and it is possible to measure the distance between the edges with high reproducibility.
- step S11 an SEM image including the measurement target region designated by the designated ROI box is acquired.
- the SEM image data is extracted from the storage unit 55 stored as pixel data.
- the edge shape (edge profile) of the pattern in the measurement target region is detected.
- This edge shape is represented by position coordinates.
- FIG. 9 is a flowchart showing edge profile detection processing in the measurement target region.
- FIG. 10 is a diagram for explaining edge profile detection in the measurement target region. In this edge profile detection process, the edge of the pattern in the measurement target region is targeted, and the start position of the edge profile detection is the edge where the ROI box and the pattern intersect.
- a predetermined interval (hereinafter referred to as a designation step) for detecting an edge within the ROI box designation range is designated.
- this designation step is a distance corresponding to a predetermined number of pixels.
- a counter k indicating the position of the detected edge within the ROI box designation range is set to 0.
- step S22 to step S24 an edge position at a position away from the start position ES by a predetermined designated step d is detected.
- a temporary edge is detected at a position separated from the start position ES by a distance of (designated step d ⁇ 2). Specifically, as shown in FIG. 10 (a), a line HL orthogonal to the straight line VL from the start position ES to the lower side ( ⁇ Y direction) of FIG. 10 (a) at the position (designated step d ⁇ 2). and a reference line of the profile creation, detects the edge E 11 by creating a line profile. The detected edge E 11 as the temporary detection edge E 11.
- next step S23 it performs a redetection provisional detection edge E 11 detected in step S22. From the start position ES and the tentative detected edge position E 11 and the straight line on the starting position ES connecting the line perpendicular at a position apart a distance (specified step d ⁇ 2) and the reference line of the profile creation, the reference line A line profile is obtained, and the temporarily detected edge position is detected again. By re-detecting the temporarily detected edge position, the distance from the start position ES is made closer to (designated step d ⁇ 2).
- the first edge position is detected.
- a line profile is determined on a line orthogonal to the straight line IL 1 connecting the start position ES and the re-detected temporary detection edge position E 12 and the intermediate position MP 1 , and an edge EP k (x k , y k ) is detected. .
- the edge EP 1 is detected as the first edge.
- the edge EP k (x k , y k ) is set as a starting point for the next edge detection.
- the edge EP 1 is the starting point.
- step S26 an edge position EP k + 1 (x k + 1 , y k + 1 ) that is a specified step away from the starting edge position EP k (x k , y k ) is detected.
- step S26 the reference profile creating a line perpendicular at a distance and provisional detection edge E 12, which is re-detected starting point EP 1 from the starting point EP 1 on the straight line IL 2 that connects only (designated step d ⁇ 2)
- a line profile is created to detect an edge.
- the detected edge as the temporary detection edge E 21.
- step S27 similarly to step S24, straight line of connecting the starting point EP 1 and the tentative detected edge position E 21, perpendicular in a position apart a distance from the origin EP 1 (specified step d ⁇ 2)
- the line is used as a reference line for profile creation, a line profile on this reference line is obtained, and the temporarily detected edge position is redetected.
- the straight line IL 3 connecting the tentative detection edge position E 22, which is re-detected the starting point EP 1 obtains a line profile on the line perpendicular at the intermediate position MP 2, detects the edge EP k + 1 To do.
- the edge EP 2 is detected as the second edge.
- step S29 it is determined whether or not all edges around the pattern have been detected. If it is determined that all have been detected, the process ends. If it is determined that the detection has not yet been completed, the process proceeds to step S30.
- the edge position in the measurement target area is detected by the above edge shape detection process, and an edge profile is created.
- a moving average width for performing a moving average on the edge profile created in step S12 is calculated.
- the moving average width is the length of the flat portion of the edge of the pattern, and is obtained from the point at which the differential value becomes zero first and the last zero point by differentiating the edge profile.
- the length is obtained by subtracting a predetermined value, for example, 100 nm from the design value of the pattern width. The reason why such a predetermined value is used is that it is assumed that the corners of the actually formed pattern are not formed at right angles but the flat portion is shortened.
- a moving average process is performed on the edge profile detected in step S12 to calculate a moving average profile.
- This moving average process is calculated by moving and averaging the edge profile with the moving average width calculated in step S13. That is, an average value is calculated for each measurement point of the edge profile by the number of measurement points corresponding to the moving average width, and a moving average profile is created.
- the edge position (center edge position) in the measurement target area is detected based on the moving average profile. If the moving average width is the same as the width of the flat portion of the edge of the actual pattern, the peak value of the moving average profile indicates the center position of the flat portion of the edge within the range specified by the ROI. The position is set as the center edge position.
- the distance between the edges is calculated using the center edge position calculated for the edge of each measurement target region.
- a pair of ROI boxes ROI11 and ROI12 are shown in FIG. ) Is set.
- the position coordinate of the peak value of the moving average profile of the edge E12 in the ROI 12 is calculated as C12 (x12, y12), and the position coordinate of the peak value of the moving average profile of the edge E11 in the ROI 11 is C11. It is assumed that (x11, y11) is calculated.
- the y coordinate y11 of C11 is the minimum value of the edge E11
- the y coordinate y12 of C12 is the maximum value of the edge E12. Accordingly, the distance d1 in the y direction between the two edges is calculated as y11-y12.
- FIG. 3B shows two patterns (P21 and P22) formed adjacent to each other in the y-axis direction and shifted in the x-axis direction.
- a distance d2 in the y-axis direction between the two patterns P21 and P22 is calculated by the method (a).
- the edge profile of the pattern in the pair of measurement target regions is smoothed by the number of predetermined measurement points. This smoothing process is performed by averaging the position coordinates of the edge profile with, for example, the position coordinates of three adjacent points. As a result, the position coordinates (smoothing profile) of the edge shape with reduced noise are calculated.
- the length of the flat part of the edge is indicated by the position coordinate as the moving average width.
- the edge characteristics are calculated by moving and averaging the edge profiles representing the shape of the edge. This edge characteristic uniquely indicates the center position of the flat portion of the edge. Then, the distance between the edges of the pattern designated by the pair of ROIs is calculated using the center position. This makes it possible to calculate the distance between edges with good reproducibility.
- the detection of the distance between the edges of the pattern has been described for the case where the pattern is formed on a substrate such as glass.
- the present invention is not limited to this, and the substrate is formed by cutting the substrate such as glass. It is also applicable to the pattern to be applied.
- the detection of the distance between the edges of the two patterns has been described.
- the present invention is not limited to this, and can be applied to the detection of the distance between the edges of one pattern.
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Abstract
Description
図1は、本実施形態に係る走査型電子顕微鏡の構成図である。 (Configuration of scanning electron microscope)
FIG. 1 is a configuration diagram of a scanning electron microscope according to the present embodiment.
次に、図1に示した走査型電子顕微鏡100を用いて、図2(a)に示す試料のパターンの線幅を測定する一般的な方法について説明する。 (General line width measurement method)
Next, a general method for measuring the line width of the sample pattern shown in FIG. 2A using the
上記した一般的なパターンのエッジ間の測長では、測定対象領域を広くとることによって正確な距離を求めるようにしている。本実施形態では、測定対象領域を広くとることができない場合であっても、エッジ間距離の正確な測長を可能にしている。 (Measurement between pattern edges)
In the above-described length measurement between edges of a general pattern, an accurate distance is obtained by taking a wide measurement target region. In the present embodiment, even when the measurement target area cannot be widened, accurate measurement of the distance between the edges is possible.
次に、図8のフローチャートを参照しながらエッジ間の測長処理について説明する。本エッジ間の測長処理では、測定対象とする2か所のエッジ位置が一対のROIボックス(測定対象領域)によって指定されているものとして説明する。なお、ROIボックスによる指定では、対象とするエッジを含み、かつROIボックスがずれてもエッジが含まれるような大きさで指定されているものとする。 (Measurement method between pattern edges)
Next, the length measurement process between edges will be described with reference to the flowchart of FIG. In the length measurement process between the edges, it is assumed that two edge positions to be measured are designated by a pair of ROI boxes (measurement target areas). In the specification by the ROI box, it is assumed that the size includes the target edge and the edge is included even if the ROI box is shifted.
図3(a)に示すパターン間のy軸方向の距離を算出するために、一対のROIボックス(ROI11及びROI12)が図3(a)のように設定される。ステップS16までの処理によって、ROI12内のエッジE12の移動平均プロファイルのピーク値の位置座標がC12(x12、y12)と算出され、ROI11内のエッジE11の移動平均プロファイルのピーク値の位置座標がC11(x11、y11)と算出されたものとする。この場合、C11のy座標y11がそのエッジE11の最小値であり、C12のy座標y12がそのエッジE12の最大値である。従って、2つのエッジ間のy方向の距離d1はy11-y12で算出される。 (A) Calculation of distance in y-axis direction between two patterns In order to calculate the distance in the y-axis direction between patterns shown in FIG. 3 (a), a pair of ROI boxes (ROI11 and ROI12) are shown in FIG. ) Is set. Through the processing up to step S16, the position coordinate of the peak value of the moving average profile of the edge E12 in the
図3(c)に示すパターン間のx軸方向の距離を算出するために、一対のROIボックス(ROI31及びROI32)が図3(c)のように設定される。ステップS16までの処理によって、ROI31内のエッジE31の移動平均プロファイルのピーク値の位置座標がC31(x31、y31)となり、ROI32内のエッジE32の移動平均プロファイルのピーク値の位置座標がC32(x32、y32)と算出されたものとする。この場合、C31のx座標x31がそのエッジE31の最大値であり、C32のx座標x32がそのエッジE32の最小値である。従って、2つのエッジ間のx方向の距離d4はx32-x31で算出される。 (B) Calculation of distance in the x-axis direction between two patterns In order to calculate the distance in the x-axis direction between the patterns shown in FIG. 3 (c), a pair of ROI boxes (
エッジ間の最短距離の算出について以下に説明する。図3(b)は、y軸方向に隣接して形成されたパターンであって、x軸方向にずれた2つのパターン(P21及びP22)を示している。この2つのパターンP21,P22間のy軸方向の距離d2は上記(a)の方法によって算出される。 (C) Calculation of the shortest distance between two patterns Calculation of the shortest distance between edges will be described below. FIG. 3B shows two patterns (P21 and P22) formed adjacent to each other in the y-axis direction and shifted in the x-axis direction. A distance d2 in the y-axis direction between the two patterns P21 and P22 is calculated by the method (a).
Claims (12)
- 電子ビームを試料上に走査しながら照射する電子ビーム照射部と、
前記電子ビームの照射によって、パターンが形成された前記試料上から発生する電子の電子量を基に当該パターンの画像を取得する画像データ取得部と、
前記パターンの画像のエッジを含む一対の測定領域を設定する測定対象領域設定部と、
前記測定領域内のパターンのエッジ形状を検出し、前記一対の測定領域内のパターンのエッジ間の距離を算出する制御部とを有し、
前記制御部は、前記測定領域内のパターンのエッジが所定の間隔の測定点の位置座標で示されたエッジプロファイルの平坦部を検出し、当該平坦部の平均位置を前記測定領域内における前記パターンのエッジ位置とすることを特徴とするパターン測長装置。 An electron beam irradiation unit for irradiating the sample while scanning the electron beam;
An image data acquisition unit that acquires an image of the pattern based on the amount of electrons generated from the sample on which the pattern is formed by irradiation of the electron beam;
A measurement target area setting unit that sets a pair of measurement areas including an edge of the image of the pattern;
A controller that detects an edge shape of the pattern in the measurement region and calculates a distance between the edges of the pattern in the pair of measurement regions;
The control unit detects a flat portion of an edge profile in which an edge of a pattern in the measurement region is indicated by position coordinates of measurement points at a predetermined interval, and an average position of the flat portion is detected in the pattern in the measurement region. The pattern length measuring device is characterized by the edge position of - 前記制御部は、前記平坦部が検出されないとき、前記パターンの幅の設計値からパターンが形成されたときに湾曲すると想定される所定の値を引いた値で前記エッジプロファイルを移動平均してエッジ特性曲線を算出し、当該エッジ特性曲線のピーク値の位置を前記パターンのエッジ位置とすることを特徴とする請求項1に記載のパターン測長装置。 When the flat portion is not detected, the control unit calculates the edge by moving and averaging the edge profile by a value obtained by subtracting a predetermined value assumed to be curved when a pattern is formed from a design value of the pattern width. The pattern length measuring apparatus according to claim 1, wherein a characteristic curve is calculated, and a position of a peak value of the edge characteristic curve is set as an edge position of the pattern.
- 前記制御部は、y軸方向に対向する前記一対の測定領域のうち、一方の測定領域内のパターンのエッジ位置のy座標の値がy1であり、他方の測定領域内のパターンのエッジ位置のy座標の値がy2であり、y1>y2のとき、y1-y2をエッジ間のy軸方向の距離とすることを特徴とする請求項1に記載のパターン測長装置。 The control unit is configured such that, of the pair of measurement areas facing in the y-axis direction, the y coordinate value of the edge position of the pattern in one measurement area is y1, and the edge position of the pattern in the other measurement area is The pattern length measuring apparatus according to claim 1, wherein when the value of the y coordinate is y2 and y1> y2, y1-y2 is a distance between edges in the y-axis direction.
- 前記制御部は、x軸方向に対向する前記一対の測定領域のうち、一方の測定領域内のパターンのエッジ位置のx座標の値がx1であり、他方の測定領域内のパターンのエッジ位置のx座標の値がx2であり、x1<x2のとき、x2-x1をエッジ間のx軸方向の距離とすることを特徴とする請求項1に記載のパターン測長装置。 The control unit has an x coordinate value of the edge position of the pattern in one measurement region of the pair of measurement regions facing in the x-axis direction, and the edge position of the pattern in the other measurement region. 2. The pattern length measuring apparatus according to claim 1, wherein when x-coordinate value is x2 and x1 <x2, x2-x1 is a distance between edges in the x-axis direction.
- 前記制御部は、前記エッジプロファイルに対して必要に応じてノイズ低減のために所定の測定点の数でスムージング処理を実施したエッジの各測定点の位置座標を用いて、一方の測定領域内のパターンのエッジと他方の測定領域内のパターンのエッジとの間の最短距離を検出することを特徴とする請求項1に記載のパターン測長装置。 The control unit uses the position coordinates of each measurement point of the edge subjected to smoothing processing with a predetermined number of measurement points to reduce noise as necessary for the edge profile, and in one measurement region. The pattern length measuring apparatus according to claim 1, wherein the shortest distance between the edge of the pattern and the edge of the pattern in the other measurement region is detected.
- 前記制御部は、前記エッジが平坦部を有し、当該平坦部がx軸に平行であるとしたとき、前記エッジプロファイルを前記エッジの平坦部より長い移動平均幅で移動平均してエッジの中心位置のx座標値を算出し、当該x座標値に対して所定の範囲の前記エッジプロファイルのy座標値の平均値を算出して、前記測定領域内における前記パターンのエッジ位置を算出することを特徴とする請求項1に記載のパターン測長装置。 When the edge has a flat portion and the flat portion is parallel to the x-axis, the control unit performs a moving average of the edge profile with a moving average width longer than the flat portion of the edge, and the center of the edge Calculating an x-coordinate value of the position, calculating an average value of y-coordinate values of the edge profile in a predetermined range with respect to the x-coordinate value, and calculating an edge position of the pattern in the measurement region; The pattern length measuring apparatus according to claim 1, wherein
- 電子ビームを試料上に走査しながら照射する電子ビーム照射部と、前記電子ビームの照射によって、パターンが形成された前記試料上から発生する電子の電子量を基に当該パターンの画像を取得する画像データ取得部と、前記パターンの画像のエッジを含む一対の測定領域を設定する測定対象領域設定部とを有するパターン測長装置において、
測定対象領域のパターンの画像を取得するステップと、
前記測定対象領域内のパターンのエッジが所定の間隔の測定点の位置座標で示されたエッジプロファイルを検出するステップと、
前記エッジプロファイルの平坦部を検出するステップと、
前記平坦部の平均位置を算出して前記パターンのエッジ位置を決定するステップと、
前記一対の測定対象領域内の一対のパターンのエッジ間の距離を検出するステップとを含むことを特徴とするパターン測長方法。 An image for acquiring an image of the pattern based on the amount of electrons generated from the sample on which the pattern is formed by the electron beam irradiation, and an electron beam irradiation unit that irradiates the sample while scanning the sample with the electron beam In a pattern length measuring apparatus having a data acquisition unit and a measurement target region setting unit that sets a pair of measurement regions including an edge of the pattern image,
Acquiring a pattern image of the measurement target region;
Detecting an edge profile in which the edge of the pattern in the measurement target region is indicated by the position coordinates of the measurement points at a predetermined interval;
Detecting a flat portion of the edge profile;
Calculating an average position of the flat portion and determining an edge position of the pattern;
Detecting a distance between edges of the pair of patterns in the pair of measurement target regions. - 前記平坦部が検出されないとき、前記平坦部を検出するステップと、前記エッジ位置を決定するステップは、
前記パターンの幅の設計値からパターンが形成されたときに湾曲すると想定される所定の値を引いた値で前記エッジプロファイルを移動平均してエッジ特性曲線を算出するステップと、当該エッジ特性曲線のピーク値の位置を前記パターンのエッジ位置に決定するステップであることを特徴とする請求項7に記載のパターン測長方法。 When the flat portion is not detected, the step of detecting the flat portion and the step of determining the edge position include:
Calculating an edge characteristic curve by moving and averaging the edge profile with a value obtained by subtracting a predetermined value assumed to be curved when a pattern is formed from a design value of the pattern width; and The pattern length measuring method according to claim 7, wherein the pattern value measuring step is a step of determining a position of a peak value as an edge position of the pattern. - 前記エッジ間の距離を検出するステップは、
y軸方向に対向する前記一対の測定領域のうち、一方の測定領域内のパターンのエッジ位置のy座標の値がy1であり、他方の測定領域内のパターンのエッジ位置のy座標の値がy2であり、y1>y2のとき、y1-y2をエッジ間のy軸方向の距離とするステップであることを特徴とする請求項7に記載のパターン測長方法。 Detecting the distance between the edges comprises:
Of the pair of measurement areas facing in the y-axis direction, the y-coordinate value of the edge position of the pattern in one measurement area is y1, and the y-coordinate value of the edge position of the pattern in the other measurement area is 8. The pattern length measuring method according to claim 7, wherein y2 is a step of setting y1-y2 as a distance between edges in the y-axis direction when y1> y2. - 前記エッジ間の距離を検出するステップは、
x軸方向に対向する前記一対の測定領域のうち、一方の測定領域内のパターンのエッジ位置のx座標の値がx1であり、他方の測定領域内のパターンのエッジ位置のx座標の値がx2であり、x1<x2のとき、x2-x1をエッジ間のx軸方向の距離とするステップであることを特徴とする請求項7に記載のパターン測長方法。 Detecting the distance between the edges comprises:
Of the pair of measurement areas facing in the x-axis direction, the x coordinate value of the edge position of the pattern in one measurement area is x1, and the x coordinate value of the edge position of the pattern in the other measurement area is 8. The pattern length measuring method according to claim 7, wherein x2 is a step of setting x2-x1 as a distance between edges in the x-axis direction when x1 <x2. - 前記エッジ間の距離を検出するステップは、
前記エッジプロファイルを所定の測定点の数で平均してスムージングするステップと、
前記一対の測定領域内のパターンのスムージングされたエッジの各測定点の位置座標を用いて、一方の測定領域内のパターンのエッジと他方の測定領域内のパターンのエッジとの間の最短距離を検出するステップとを含むことを特徴とする請求項7に
記載のパターン測長方法。 Detecting the distance between the edges comprises:
Smoothing the edge profile by averaging the predetermined number of measurement points;
Using the position coordinates of each measurement point of the smoothed edge of the pattern in the pair of measurement areas, the shortest distance between the edge of the pattern in one measurement area and the edge of the pattern in the other measurement area is determined. The pattern length measuring method according to claim 7, further comprising a detecting step. - 前記エッジ特性曲線を算出するステップとエッジ位置を特定するステップは、
前記エッジが平坦部を有し、当該平坦部がx軸に平行であるとしたとき、前記エッジプロファイルを前記エッジの平坦部より長い移動平均幅で移動平均してエッジの中心位置のx座標値を算出するステップと、
当該x座標値に対して所定の範囲の前記エッジプロファイルのy座標値の平均値を算出して、前記測定領域内における前記パターンのエッジ位置を算出するステップであることを特長とする請求項8に記載のパターン測長方法。
The step of calculating the edge characteristic curve and the step of specifying the edge position include:
When the edge has a flat portion and the flat portion is parallel to the x-axis, the edge profile is moved and averaged with a moving average width longer than the flat portion of the edge, and the x coordinate value of the center position of the edge Calculating steps,
9. The step of calculating an average value of y coordinate values of the edge profile in a predetermined range with respect to the x coordinate value, and calculating an edge position of the pattern in the measurement region. Pattern length measuring method described in 1.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2008/054295 WO2009113149A1 (en) | 2008-03-10 | 2008-03-10 | Device for measuring pattern length and method for measuring pattern length |
DE112008003774T DE112008003774T5 (en) | 2008-03-10 | 2008-03-10 | Structural measuring device and structural measuring method |
JP2010502654A JP5066252B2 (en) | 2008-03-10 | 2008-03-10 | Pattern length measuring device and pattern length measuring method |
TW098105962A TW200942800A (en) | 2008-03-10 | 2009-02-25 | Device for measuring pattern length and method for measuring pattern length |
US12/807,615 US8431895B2 (en) | 2008-03-10 | 2010-09-09 | Pattern measuring apparatus and pattern measuring method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2008/054295 WO2009113149A1 (en) | 2008-03-10 | 2008-03-10 | Device for measuring pattern length and method for measuring pattern length |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/807,615 Continuation US8431895B2 (en) | 2008-03-10 | 2010-09-09 | Pattern measuring apparatus and pattern measuring method |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009113149A1 true WO2009113149A1 (en) | 2009-09-17 |
Family
ID=41064831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/054295 WO2009113149A1 (en) | 2008-03-10 | 2008-03-10 | Device for measuring pattern length and method for measuring pattern length |
Country Status (5)
Country | Link |
---|---|
US (1) | US8431895B2 (en) |
JP (1) | JP5066252B2 (en) |
DE (1) | DE112008003774T5 (en) |
TW (1) | TW200942800A (en) |
WO (1) | WO2009113149A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011106947A (en) * | 2009-11-17 | 2011-06-02 | Hitachi High-Technologies Corp | Edge detection method, length measurement method, charged particle beam apparatus |
JP5411866B2 (en) * | 2009-10-30 | 2014-02-12 | 株式会社アドバンテスト | Pattern measuring apparatus and pattern measuring method |
JP2014032102A (en) * | 2012-08-03 | 2014-02-20 | Hitachi High-Technologies Corp | Signal processor and charged particle beam device |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5530980B2 (en) * | 2011-06-14 | 2014-06-25 | 株式会社アドバンテスト | Pattern measuring apparatus and pattern measuring method |
JP5438741B2 (en) * | 2011-10-26 | 2014-03-12 | 株式会社アドバンテスト | Pattern measuring apparatus and pattern measuring method |
EP2873088A4 (en) * | 2012-07-16 | 2015-08-05 | Fei Co | Endpointing for focused ion beam processing |
KR101877696B1 (en) * | 2012-09-27 | 2018-07-12 | 가부시키가이샤 히다치 하이테크놀로지즈 | Pattern measurement device, evaluation method of polymer compounds used in self-assembly lithography, and computer program |
DE112014003984B4 (en) | 2013-09-26 | 2020-08-06 | Hitachi High-Technologies Corporation | Device operating with a charged particle beam |
EP3779882B1 (en) * | 2019-08-16 | 2022-07-20 | Sick IVP AB | Providing intensity peak position in image data from light triangulation in a three-dimensional imaging system |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0458104A (en) * | 1990-06-27 | 1992-02-25 | Hitachi Ltd | Electron beam size measuring instrument |
JPH11201919A (en) * | 1998-01-16 | 1999-07-30 | Toshiba Corp | Apparatus and method for inspecting pattern and recording medium recording pattern inspection process program |
JP2007292732A (en) * | 2006-03-29 | 2007-11-08 | Advantest Corp | Pattern measuring device and pattern measuring method |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6275206A (en) * | 1985-09-30 | 1987-04-07 | Hitachi Ltd | Electron beam length measuring instrument |
JPH05296754A (en) | 1992-04-17 | 1993-11-09 | Nikon Corp | Edge detecting method |
US6326618B1 (en) * | 1999-07-02 | 2001-12-04 | Agere Systems Guardian Corp. | Method of analyzing semiconductor surface with patterned feature using line width metrology |
JP2002296761A (en) * | 2001-03-29 | 2002-10-09 | Toshiba Corp | Method and device for measuring pattern |
JP4104934B2 (en) * | 2002-08-22 | 2008-06-18 | 株式会社トプコン | Sample image measuring method and sample image measuring apparatus |
JP4286657B2 (en) * | 2003-12-26 | 2009-07-01 | 株式会社日立ハイテクノロジーズ | Method for measuring line and space pattern using scanning electron microscope |
JP4262125B2 (en) * | 2004-03-26 | 2009-05-13 | 株式会社日立ハイテクノロジーズ | Pattern measurement method |
WO2007094439A1 (en) * | 2006-02-17 | 2007-08-23 | Hitachi High-Technologies Corporation | Sample dimension inspecting/measuring method and sample dimension inspecting/measuring apparatus |
WO2008032387A1 (en) * | 2006-09-14 | 2008-03-20 | Advantest Corporation | Pattern dimension measuring device and pattern area measuring method |
US7791022B2 (en) * | 2007-03-13 | 2010-09-07 | Advantest Corp. | Scanning electron microscope with length measurement function and dimension length measurement method |
-
2008
- 2008-03-10 JP JP2010502654A patent/JP5066252B2/en active Active
- 2008-03-10 DE DE112008003774T patent/DE112008003774T5/en not_active Withdrawn
- 2008-03-10 WO PCT/JP2008/054295 patent/WO2009113149A1/en active Application Filing
-
2009
- 2009-02-25 TW TW098105962A patent/TW200942800A/en not_active IP Right Cessation
-
2010
- 2010-09-09 US US12/807,615 patent/US8431895B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0458104A (en) * | 1990-06-27 | 1992-02-25 | Hitachi Ltd | Electron beam size measuring instrument |
JPH11201919A (en) * | 1998-01-16 | 1999-07-30 | Toshiba Corp | Apparatus and method for inspecting pattern and recording medium recording pattern inspection process program |
JP2007292732A (en) * | 2006-03-29 | 2007-11-08 | Advantest Corp | Pattern measuring device and pattern measuring method |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5411866B2 (en) * | 2009-10-30 | 2014-02-12 | 株式会社アドバンテスト | Pattern measuring apparatus and pattern measuring method |
JP2011106947A (en) * | 2009-11-17 | 2011-06-02 | Hitachi High-Technologies Corp | Edge detection method, length measurement method, charged particle beam apparatus |
JP2014032102A (en) * | 2012-08-03 | 2014-02-20 | Hitachi High-Technologies Corp | Signal processor and charged particle beam device |
Also Published As
Publication number | Publication date |
---|---|
US8431895B2 (en) | 2013-04-30 |
JP5066252B2 (en) | 2012-11-07 |
US20110049362A1 (en) | 2011-03-03 |
DE112008003774T5 (en) | 2011-02-24 |
TWI375786B (en) | 2012-11-01 |
JPWO2009113149A1 (en) | 2011-07-14 |
TW200942800A (en) | 2009-10-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5066252B2 (en) | Pattern length measuring device and pattern length measuring method | |
US8110800B2 (en) | Scanning electron microscope system and method for measuring dimensions of patterns formed on semiconductor device by using the system | |
US7590506B2 (en) | Pattern measurement apparatus and pattern measuring method | |
US8779359B2 (en) | Defect review apparatus and defect review method | |
US8330104B2 (en) | Pattern measurement apparatus and pattern measurement method | |
JP4580990B2 (en) | Pattern dimension measuring apparatus and pattern area measuring method | |
WO2007094439A1 (en) | Sample dimension inspecting/measuring method and sample dimension inspecting/measuring apparatus | |
US8258471B2 (en) | Pattern measuring apparatus and pattern measuring method | |
US8357897B2 (en) | Charged particle beam device | |
US8507858B2 (en) | Pattern measurement apparatus and pattern measurement method | |
US8263935B2 (en) | Charged particle beam apparatus | |
JP4262125B2 (en) | Pattern measurement method | |
US20140312224A1 (en) | Pattern inspection method and pattern inspection apparatus | |
US8605985B2 (en) | Pattern measurement apparatus and pattern measurement method | |
JP6044182B2 (en) | Method for determining unevenness of fine patterns | |
US8675948B2 (en) | Mask inspection apparatus and mask inspection method | |
JP2011150840A (en) | Inclination measuring method in scanning electron microscope, and scanning electron microscope |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08721711 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2010502654 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1120080037744 Country of ref document: DE |
|
RET | De translation (de og part 6b) |
Ref document number: 112008003774 Country of ref document: DE Date of ref document: 20110224 Kind code of ref document: P |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 08721711 Country of ref document: EP Kind code of ref document: A1 |