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WO2009103048A4 - Dual photo-diode cmos pixels - Google Patents

Dual photo-diode cmos pixels Download PDF

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Publication number
WO2009103048A4
WO2009103048A4 PCT/US2009/034211 US2009034211W WO2009103048A4 WO 2009103048 A4 WO2009103048 A4 WO 2009103048A4 US 2009034211 W US2009034211 W US 2009034211W WO 2009103048 A4 WO2009103048 A4 WO 2009103048A4
Authority
WO
WIPO (PCT)
Prior art keywords
well
deep
weil
substrate
semiconductor substrate
Prior art date
Application number
PCT/US2009/034211
Other languages
French (fr)
Other versions
WO2009103048A1 (en
Inventor
Carlos Augusto
Original Assignee
Quantum Semiconductor Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quantum Semiconductor Llc filed Critical Quantum Semiconductor Llc
Publication of WO2009103048A1 publication Critical patent/WO2009103048A1/en
Publication of WO2009103048A4 publication Critical patent/WO2009103048A4/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

The present invention provides a method of forming CMOS pixels, with the light-sensing region comprising vertically aligned dual photo-diodes, in which the bottom photo-diode is formed either by a well-to-substrate junction, or by a deep-well-to-substrate junction, wherein said well and deep-well are independently biased from surrounding wells and deep-wells of the same polarity. Said independently biased well is a common region to the top and bottom photo-diodes and overlaps the source/drain region of a MOSFET formed on a well with the opposite polarity, that of the substrate. The photo-diodes can be electrically connected in parallel, or the top photo- diode can be biased separately from the bottom photo-diode, said bias can be such that avalanche mode operation is possible, including the single-photon detection (Geiger) mode.

Claims

AMENDED CLAIMS Received by the International Bureau on 31 August 2009 (31.08.09)
1. A method of forming a CMOS Image Sensor for front side illumination, comprising a plurality of pixels on a semiconductor substrate (e.g. P-substrate) with each pixel including a light-sensing region, characterized by: on the semiconductor substrate (e.g. P-substrate) in the light-sensing region of each pixel, formation a well (e.g. N-WeIl) having a defined doping polarity, using a standard CMOS process, with the well-to-substrate junction forming a bottom photodiode (PD)5 said well
(e.g. N-WeIl) being isolated from surrounding wells having the same doping polarity, said well (e.g. N-WeIl) overlapping a portion of the source/drain region of an adjacent
MOSFET formed over a well (e.g. P-WeU) having the same doping polarity than said semiconductor substrate (P-substrate), and formation of a top photodiode (PD) by implant over said well (e.g. N-WeIl), using a standard CMOS process, said top photodiode being located near the front side surface in vertical alignment with the bottom photodiode (PD) in the light sensing region.
2. A method as claimed in claim 1, characterized by the formation of a deep well (e.g. Deep N-WeIl) on the semiconductor substrate, using a standard CMOS process, said deep well having the same doping polarity than said well (N-WeJU) and said deep well extending under said well and being isolated from the surrounding deep wells (e.g. Deep N-WeIl).
3. A method as claimed in claim 2, wherein for each pixel, the well and deep-well part of the pixel fully surround the well (e.g. P-WeIl) on which the adjacent in-pixel
MOSFET is formed, thereby electrically isolating said MOSFET well from the semiconductor substrate.
4. A method as claimed in either of the preceding claims, further comprising the step of thinning the back-side of the semiconductor substrate and depositing a light-reflecting metal layer (Back-Side Metal Contact and Light Reflector) on said thinned back side.
PCT/US2009/034211 2008-02-14 2009-02-16 Dual photo-diode cmos pixels WO2009103048A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2888308P 2008-02-14 2008-02-14
US61/028,883 2008-02-14

Publications (2)

Publication Number Publication Date
WO2009103048A1 WO2009103048A1 (en) 2009-08-20
WO2009103048A4 true WO2009103048A4 (en) 2009-10-22

Family

ID=40732074

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/034211 WO2009103048A1 (en) 2008-02-14 2009-02-16 Dual photo-diode cmos pixels

Country Status (1)

Country Link
WO (1) WO2009103048A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201014843D0 (en) 2010-09-08 2010-10-20 Univ Edinburgh Single photon avalanche diode for CMOS circuits
DE102011077383A1 (en) * 2011-06-10 2012-12-13 Siemens Aktiengesellschaft Arrangement of two or more semiconductor devices
FR2997596B1 (en) * 2012-10-26 2015-12-04 New Imaging Technologies Sas STRUCTURE OF A CMOS ACTIVE PIXEL
EP2816601B1 (en) 2013-06-20 2017-03-01 IMEC vzw Improvements in or relating to pinned photodiodes for use in image sensors
CN105609513A (en) * 2015-10-29 2016-05-25 上海集成电路研发中心有限公司 Double-surface CMOS image sensor chip and manufacture method thereof
EP3475987A4 (en) * 2016-06-21 2020-01-01 Shenzhen Xpectvision Technology Co., Ltd. An image sensor based on avalanche photodiodes
EP3654376A1 (en) * 2018-11-19 2020-05-20 Université de Genève Multi-junction pico-avalanche detector

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3759435B2 (en) * 2001-07-11 2006-03-22 ソニー株式会社 XY address type solid-state imaging device
KR100436067B1 (en) * 2001-11-16 2004-06-12 주식회사 하이닉스반도체 Image sensor and method of fabricating the same
KR100485892B1 (en) * 2002-11-14 2005-04-29 매그나칩 반도체 유한회사 Cmos image sensor and the method for fabricating thereof
JP4507769B2 (en) * 2004-08-31 2010-07-21 ソニー株式会社 Solid-state image sensor, camera module, and electronic device module
JP4389737B2 (en) * 2004-09-22 2009-12-24 セイコーエプソン株式会社 Solid-state imaging device and driving method thereof
JP5010244B2 (en) * 2005-12-15 2012-08-29 オンセミコンダクター・トレーディング・リミテッド Semiconductor device
JP2007234927A (en) * 2006-03-02 2007-09-13 Seiko Epson Corp Solid-state imaging apparatus, and manufacturing method thereof
JP4935199B2 (en) * 2006-06-12 2012-05-23 セイコーエプソン株式会社 Solid-state imaging device and driving method thereof

Also Published As

Publication number Publication date
WO2009103048A1 (en) 2009-08-20

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