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WO2009024414A3 - Thermal power element or peltier elements comprising sintered nanocrystals of silicon, germanium or silicon-germanium alloys - Google Patents

Thermal power element or peltier elements comprising sintered nanocrystals of silicon, germanium or silicon-germanium alloys Download PDF

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Publication number
WO2009024414A3
WO2009024414A3 PCT/EP2008/059268 EP2008059268W WO2009024414A3 WO 2009024414 A3 WO2009024414 A3 WO 2009024414A3 EP 2008059268 W EP2008059268 W EP 2008059268W WO 2009024414 A3 WO2009024414 A3 WO 2009024414A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
germanium
peltier elements
thermal power
power element
Prior art date
Application number
PCT/EP2008/059268
Other languages
German (de)
French (fr)
Other versions
WO2009024414A2 (en
Inventor
André Ebbers
Martin Trocha
Robert Lechner
Martin S. Brandt
Martin Stutzmann
Hartmut Wiggers
Christof Schulz
Original Assignee
Evonik Degussa Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evonik Degussa Gmbh filed Critical Evonik Degussa Gmbh
Publication of WO2009024414A2 publication Critical patent/WO2009024414A2/en
Publication of WO2009024414A3 publication Critical patent/WO2009024414A3/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Silicon Compounds (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)

Abstract

The present invention relates to a process for producing thermoelectrical components or Peltier elements, and also to these components comprising printed silicon layers, produced from dispersions of at least partially doped, semiconductive particles, in particular from silicon, germanium or silicon-germanium alloys.
PCT/EP2008/059268 2007-08-17 2008-07-16 Thermal power element or peltier elements comprising sintered nanocrystals of silicon, germanium or silicon-germanium alloys WO2009024414A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007039060.4 2007-08-17
DE102007039060.4A DE102007039060B4 (en) 2007-08-17 2007-08-17 Thermokraft element or Peltier elements made of sintered nanocrystals of silicon, germanium or silicon-germanium alloys

Publications (2)

Publication Number Publication Date
WO2009024414A2 WO2009024414A2 (en) 2009-02-26
WO2009024414A3 true WO2009024414A3 (en) 2009-11-05

Family

ID=39832650

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/059268 WO2009024414A2 (en) 2007-08-17 2008-07-16 Thermal power element or peltier elements comprising sintered nanocrystals of silicon, germanium or silicon-germanium alloys

Country Status (2)

Country Link
DE (1) DE102007039060B4 (en)
WO (1) WO2009024414A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009024667A1 (en) * 2009-02-27 2010-09-02 Universität Duisburg-Essen Method for producing a semiconductor and semiconductor and electrical element
DK3196951T3 (en) 2016-01-21 2019-01-21 Evonik Degussa Gmbh RATIONAL PROCEDURE FOR POWDER METAL SURGICAL MANUFACTURING THERMOELECTRIC COMPONENTS
JP7523027B2 (en) * 2018-07-23 2024-07-26 パナソニックＩｐマネジメント株式会社 Thermoelectric conversion material and method for obtaining electric power using the thermoelectric conversion material
EP3683850A1 (en) * 2019-01-17 2020-07-22 Evonik Degussa GmbH Thermoelectric conversion elements and their preparation by means of treatment of silicon alloy powder
CN110299444A (en) * 2019-05-30 2019-10-01 同济大学 A kind of EuCd2Sb2 base thermoelectricity material and preparation method thereof

Citations (9)

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US5411599A (en) * 1993-09-20 1995-05-02 The United States Of America As Represented The Secretary Of The Army Thermoelectric device utilizing nanoporous material
JPH10242535A (en) * 1997-02-27 1998-09-11 Central Res Inst Of Electric Power Ind Thermoelectric material and its manufacture
EP1083610A1 (en) * 1999-03-10 2001-03-14 Sumitomo Special Metals Company Limited Thermoelectric conversion material and method of producing the same
US6225548B1 (en) * 1998-11-27 2001-05-01 Aisin Seiki Kabushiki Kaisha Thermoelectric semiconductor compound and method of making the same
EP1187230A2 (en) * 2000-09-04 2002-03-13 Japan Aviation Electronics Industry, Limited Thermoelectric material and method of manufacturing the same
DE10353996A1 (en) * 2003-11-19 2005-06-09 Degussa Ag Nanoscale, crystalline silicon powder
WO2005091393A1 (en) * 2004-03-22 2005-09-29 Japan Science And Technology Agency Porous thermoelectric material and process for producing the same
DE102005056446A1 (en) * 2005-05-14 2006-11-16 Degussa Ag Dispersion, useful for coating substrates, which are useful for the production of solar cells, comprises silicon powders and liquid phase, where the silicon powder is present in the form of crystals
DE102007014608A1 (en) * 2007-03-23 2008-09-25 Evonik Degussa Gmbh Porous semiconducting structure useful in an electronic component for field-effect transistor, has an electrical conductivity, an activation energy of the conductivity, a solid content, a pore size and a thickness of a specified range

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EP1039557A4 (en) * 1997-10-24 2007-02-21 Neomax Co Ltd Silicon based conductive material and process for production thereof
US6958443B2 (en) * 2003-05-19 2005-10-25 Applied Digital Solutions Low power thermoelectric generator
KR101090868B1 (en) * 2004-12-24 2011-12-08 재단법인 포항산업과학연구원 Manufacturing method of porous thermoelectric material
US7569202B2 (en) * 2005-05-09 2009-08-04 Vesta Research, Ltd. Silicon nanosponge particles
EP1760045A1 (en) 2005-09-03 2007-03-07 Degussa GmbH Nanoscale silicon particles

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5411599A (en) * 1993-09-20 1995-05-02 The United States Of America As Represented The Secretary Of The Army Thermoelectric device utilizing nanoporous material
JPH10242535A (en) * 1997-02-27 1998-09-11 Central Res Inst Of Electric Power Ind Thermoelectric material and its manufacture
US6225548B1 (en) * 1998-11-27 2001-05-01 Aisin Seiki Kabushiki Kaisha Thermoelectric semiconductor compound and method of making the same
EP1083610A1 (en) * 1999-03-10 2001-03-14 Sumitomo Special Metals Company Limited Thermoelectric conversion material and method of producing the same
EP1187230A2 (en) * 2000-09-04 2002-03-13 Japan Aviation Electronics Industry, Limited Thermoelectric material and method of manufacturing the same
DE10353996A1 (en) * 2003-11-19 2005-06-09 Degussa Ag Nanoscale, crystalline silicon powder
WO2005091393A1 (en) * 2004-03-22 2005-09-29 Japan Science And Technology Agency Porous thermoelectric material and process for producing the same
US20070240749A1 (en) * 2004-03-22 2007-10-18 Japan Science And Technology Agency Porous Thermoelectric Material and Process for Producing the Same
DE102005056446A1 (en) * 2005-05-14 2006-11-16 Degussa Ag Dispersion, useful for coating substrates, which are useful for the production of solar cells, comprises silicon powders and liquid phase, where the silicon powder is present in the form of crystals
DE102007014608A1 (en) * 2007-03-23 2008-09-25 Evonik Degussa Gmbh Porous semiconducting structure useful in an electronic component for field-effect transistor, has an electrical conductivity, an activation energy of the conductivity, a solid content, a pore size and a thickness of a specified range

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
HARRIS T ET AL: "Thermal conductivity reduction of SiGe nanocomposites", STRUCTURE AND MECHANICAL BEHAVIOR OF BIOLOGICAL MATERIALS. SYMPOSIUM - 29-31 MARCH 2005 - SAN FRANCISCO, CA, USA (IN: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS),, 1 December 2003 (2003-12-01), pages 169 - 174, XP002454074, ISBN: 978-1-55899-828-5 *
LECHNER, R. ET AL: "Thermoelectric effect in laser annealed printed nanocrystalline silicon layers", PHYS. STATUS SOLIDI RRL, vol. 1, no. 6, 11 October 2007 (2007-10-11), Weinheim, pages 262 - 264, XP002537704 *
WIGGERS H ET AL: "SILICON PARTICLE FORMATION BY PYROLYSIS OF SILANE IN A HOT WALL GASPHASE REACTOR", CHEMICAL ENGINEERING AND TECHNOLOGY, WEINHEIM, DE, vol. 24, no. 3, 1 January 2001 (2001-01-01), pages 261 - 264, XP009042555, ISSN: 0930-7516 *

Also Published As

Publication number Publication date
DE102007039060A1 (en) 2009-02-19
DE102007039060B4 (en) 2019-04-25
WO2009024414A2 (en) 2009-02-26

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