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WO2009019749A1 - Silicon supporting device and silicon heating rapidly cooling apparatus utilizing the same - Google Patents

Silicon supporting device and silicon heating rapidly cooling apparatus utilizing the same Download PDF

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Publication number
WO2009019749A1
WO2009019749A1 PCT/JP2007/065278 JP2007065278W WO2009019749A1 WO 2009019749 A1 WO2009019749 A1 WO 2009019749A1 JP 2007065278 W JP2007065278 W JP 2007065278W WO 2009019749 A1 WO2009019749 A1 WO 2009019749A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
pipes
supporting device
raw material
cooling apparatus
Prior art date
Application number
PCT/JP2007/065278
Other languages
French (fr)
Japanese (ja)
Inventor
Tsuyoshi Murai
Toshinori Konaka
Original Assignee
Teoss Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teoss Co., Ltd. filed Critical Teoss Co., Ltd.
Priority to RU2009107892/05A priority Critical patent/RU2009107892A/en
Priority to US12/226,860 priority patent/US20100207312A1/en
Priority to AT07791951T priority patent/ATE539036T1/en
Priority to EP07791951A priority patent/EP2062854B1/en
Priority to JP2008537659A priority patent/JP4294087B2/en
Priority to KR1020087022204A priority patent/KR101061398B1/en
Priority to PCT/JP2007/065278 priority patent/WO2009019749A1/en
Priority to TW097116312A priority patent/TWI446969B/en
Publication of WO2009019749A1 publication Critical patent/WO2009019749A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C19/00—Other disintegrating devices or methods
    • B02C19/18—Use of auxiliary physical effects, e.g. ultrasonics, irradiation, for disintegrating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Food Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Disintegrating Or Milling (AREA)
  • Furnace Housings, Linings, Walls, And Ceilings (AREA)

Abstract

A silicon supporting device that is free from deteriorating of the purity of raw material silicon and ensures easy maintenance; and a silicon heating rapidly cooling apparatus utilizing the same. Silicon supporting device (14) is constructed of multiple pipes (32) each provided with internal flow passage channel (34) for flow passage of cooling medium (L), these pipes arranged with given spacing therebetween, and includes silicon supporting section (22) for supporting raw material silicon (12); titanium-made contact preventive members (24) disposed in contact with the external surfaces of pipes (32) and interposed between the raw material silicon (12) and the pipes (32) to thereby prevent contact between the raw material silicon (12) and the pipes (32); and titanium-made fixing members (26) for fixing the contact preventive members (24) to the pipes (32).
PCT/JP2007/065278 2007-08-03 2007-08-03 Silicon supporting device and silicon heating rapidly cooling apparatus utilizing the same WO2009019749A1 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
RU2009107892/05A RU2009107892A (en) 2007-08-03 2007-08-03 SUPPORT DEVICE FOR SILICON MATERIAL AND EQUIPMENT FOR HEATING AND QUICK COOLING OF SILICON MATERIAL USING THIS DEVICE
US12/226,860 US20100207312A1 (en) 2007-08-03 2007-08-03 Silicon Supporting Apparatus and Silicon Heating and Quenching Equipment Using the Same
AT07791951T ATE539036T1 (en) 2007-08-03 2007-08-03 SILICON CARRIER DEVICE AND DEVICE FOR HEATING AND RAPIDLY COOLING SILICON THEREFROM
EP07791951A EP2062854B1 (en) 2007-08-03 2007-08-03 Silicon supporting device and silicon heating rapidly cooling apparatus utilizing the same
JP2008537659A JP4294087B2 (en) 2007-08-03 2007-08-03 Silicon support device and silicon heating and quenching device using the same
KR1020087022204A KR101061398B1 (en) 2007-08-03 2007-08-03 Silicon support device and silicon heating quenching device using the same
PCT/JP2007/065278 WO2009019749A1 (en) 2007-08-03 2007-08-03 Silicon supporting device and silicon heating rapidly cooling apparatus utilizing the same
TW097116312A TWI446969B (en) 2007-08-03 2008-05-02 A silicon resin supporting device and a silicon resin heating and quench unit using the supporting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/065278 WO2009019749A1 (en) 2007-08-03 2007-08-03 Silicon supporting device and silicon heating rapidly cooling apparatus utilizing the same

Publications (1)

Publication Number Publication Date
WO2009019749A1 true WO2009019749A1 (en) 2009-02-12

Family

ID=40340997

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/065278 WO2009019749A1 (en) 2007-08-03 2007-08-03 Silicon supporting device and silicon heating rapidly cooling apparatus utilizing the same

Country Status (8)

Country Link
US (1) US20100207312A1 (en)
EP (1) EP2062854B1 (en)
JP (1) JP4294087B2 (en)
KR (1) KR101061398B1 (en)
AT (1) ATE539036T1 (en)
RU (1) RU2009107892A (en)
TW (1) TWI446969B (en)
WO (1) WO2009019749A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010017635A (en) * 2008-07-09 2010-01-28 Teoss Corp Silicon heating furnace and silicon crushing machine using the same
EP2280097A1 (en) 2009-07-28 2011-02-02 Mitsubishi Materials Corporation Method of generating cracks in polycrystalline silicon rod and crack generating apparatus
WO2013046270A1 (en) 2011-09-29 2013-04-04 株式会社テオス Raw material silicon crushing device
CN108405035A (en) * 2018-02-26 2018-08-17 亚洲硅业（青海）有限公司 A kind of polycrystalline silicon rod breaker and method
CN110180659A (en) * 2019-07-03 2019-08-30 山东澳联新材料有限公司 Silicon material microwave heating equipment

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102489372B (en) * 2011-12-12 2013-09-04 湖南顶立科技有限公司 Method and device for breaking polycrystalline silicon rod
CN102586866A (en) * 2012-02-09 2012-07-18 上海施科特光电材料有限公司 Method for restraining bulbs in process of growing slice-shaped sapphire in guiding mold mode
CN103599835B (en) * 2013-11-20 2016-06-15 宁夏宁电光伏材料有限公司 A kind of silico briquette breaking method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005103529A (en) * 2003-10-01 2005-04-21 Iis Materials:Kk Crushing method of silicon block
JP2005288332A (en) 2004-03-31 2005-10-20 Mitsubishi Materials Polycrystalline Silicon Corp Crushing method of polycrystalline silicon rod

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3811091A1 (en) * 1988-03-31 1989-10-12 Heliotronic Gmbh METHOD FOR COMMANDING LOW CONTAMINATION OF SOLID, PIECE OF SILICONE
JP3805134B2 (en) * 1999-05-25 2006-08-02 東陶機器株式会社 Electrostatic chuck for insulating substrate adsorption
KR100709801B1 (en) * 1999-11-17 2007-04-23 동경 엘렉트론 주식회사 Precoat film forming method, idling method of film forming device, loading table structure, film forming device and film forming method
KR100786878B1 (en) * 2000-01-31 2007-12-20 신에쯔 한도타이 가부시키가이샤 Single crystal growing apparatus, single crystal manufacturing method and single crystal using the same device
JP4158386B2 (en) * 2002-02-28 2008-10-01 東京エレクトロン株式会社 Cooling apparatus and heat treatment apparatus using the same
JP2004131373A (en) * 2002-09-09 2004-04-30 Corning Inc Method of manufacturing silica and titania extreme ultraviolet ray optical element
US7824498B2 (en) * 2004-02-24 2010-11-02 Applied Materials, Inc. Coating for reducing contamination of substrates during processing
US20050217799A1 (en) * 2004-03-31 2005-10-06 Tokyo Electron Limited Wafer heater assembly

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005103529A (en) * 2003-10-01 2005-04-21 Iis Materials:Kk Crushing method of silicon block
JP2005288332A (en) 2004-03-31 2005-10-20 Mitsubishi Materials Polycrystalline Silicon Corp Crushing method of polycrystalline silicon rod

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010017635A (en) * 2008-07-09 2010-01-28 Teoss Corp Silicon heating furnace and silicon crushing machine using the same
EP2280097A1 (en) 2009-07-28 2011-02-02 Mitsubishi Materials Corporation Method of generating cracks in polycrystalline silicon rod and crack generating apparatus
US8490901B2 (en) 2009-07-28 2013-07-23 Mitsubishi Materials Corporation Method of generating cracks in polycrystalline silicon rod and crack generating apparatus
US9297586B2 (en) 2009-07-28 2016-03-29 Mitsubishi Materials Corporation Method of generating cracks in polycrystalline silicon rod and crack generating apparatus
WO2013046270A1 (en) 2011-09-29 2013-04-04 株式会社テオス Raw material silicon crushing device
CN108405035A (en) * 2018-02-26 2018-08-17 亚洲硅业（青海）有限公司 A kind of polycrystalline silicon rod breaker and method
CN108405035B (en) * 2018-02-26 2020-07-28 亚洲硅业(青海)股份有限公司 Polycrystalline silicon rod crushing device and method
CN110180659A (en) * 2019-07-03 2019-08-30 山东澳联新材料有限公司 Silicon material microwave heating equipment

Also Published As

Publication number Publication date
KR101061398B1 (en) 2011-09-02
US20100207312A1 (en) 2010-08-19
RU2009107892A (en) 2013-03-20
EP2062854A1 (en) 2009-05-27
KR20100057472A (en) 2010-05-31
JP4294087B2 (en) 2009-07-08
EP2062854B1 (en) 2011-12-28
EP2062854A4 (en) 2010-11-03
TW200906491A (en) 2009-02-16
TWI446969B (en) 2014-08-01
JPWO2009019749A1 (en) 2010-10-28
ATE539036T1 (en) 2012-01-15

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