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WO2009074469A3 - Rückkontaktsolarzelle mit grossflächigen rückseiten-emitterbereichen und herstellungsverfahren hierfür - Google Patents

Rückkontaktsolarzelle mit grossflächigen rückseiten-emitterbereichen und herstellungsverfahren hierfür Download PDF

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Publication number
WO2009074469A3
WO2009074469A3 PCT/EP2008/066445 EP2008066445W WO2009074469A3 WO 2009074469 A3 WO2009074469 A3 WO 2009074469A3 EP 2008066445 W EP2008066445 W EP 2008066445W WO 2009074469 A3 WO2009074469 A3 WO 2009074469A3
Authority
WO
WIPO (PCT)
Prior art keywords
regions
emitter
solar cell
rear side
contact solar
Prior art date
Application number
PCT/EP2008/066445
Other languages
English (en)
French (fr)
Other versions
WO2009074469A2 (de
Inventor
Nils-Peter Harder
Original Assignee
Institut Für Solarenergieforschung Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institut Für Solarenergieforschung Gmbh filed Critical Institut Für Solarenergieforschung Gmbh
Priority to JP2010537373A priority Critical patent/JP2011507246A/ja
Priority to AU2008334769A priority patent/AU2008334769A1/en
Priority to US12/747,450 priority patent/US20110023956A1/en
Priority to CA2708616A priority patent/CA2708616A1/en
Priority to EP08858742A priority patent/EP2223344A2/de
Publication of WO2009074469A2 publication Critical patent/WO2009074469A2/de
Publication of WO2009074469A3 publication Critical patent/WO2009074469A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Es wird eine Rückkontakt-Solarzelle sowie ein Verfahren zu deren Herstellung beschrieben. Die Rückkontakt-Solarzelle weist ein Halbleitersubstrat (1) auf, an dessen Rückseiten-Oberfläche (3) Emitterbereiche (5), die von Emitterkontakten (11) kontaktiert werden, und Basisbereiche (7), die von Basiskontakten (13) kontaktiert werden, ausgebildet sind. Die Emitterbereiche und die Basisbereiche überlappen sich zumindest in Überlappungsbereichen, wobei die Emitterbereiche (5) in den Überlappungsbereichen (19) von der Rückseiten-Oberfläche der Solarzelle aus gesehen tiefer in das Halbleitersubstrat (1) hineinreichen als die Basisbereiche (7). Dadurch kann erreicht werden, dass einerseits ein großer Flächenanteil der Rückseite des Halbleitersubstrats mit einem Ladungsträger-sammelnden Emitter bedeckt sein kann, dieser Emitter jedoch zumindest teilweise im Inneren des Halbleitersubstrats (1) „vergraben' ist, so dass kein Risiko besteht, dass die Basiskontakte 13 einen Kurzschluss zu den vergrabenen Emitterbereichen (5) provozieren.
PCT/EP2008/066445 2007-12-11 2008-11-28 Rückkontaktsolarzelle mit grossflächigen rückseiten-emitterbereichen und herstellungsverfahren hierfür WO2009074469A2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010537373A JP2011507246A (ja) 2007-12-11 2008-11-28 広いうら側エミッタ領域を有する裏面電極型太陽電池およびその製造方法
AU2008334769A AU2008334769A1 (en) 2007-12-11 2008-11-28 Rear-contact solar cell having large rear side emitter regions and method for producing the same
US12/747,450 US20110023956A1 (en) 2007-12-11 2008-11-28 Rear-contact solar cell having extensive rear side emitter regions and method for producing the same
CA2708616A CA2708616A1 (en) 2007-12-11 2008-11-28 Rear-contact solar cell having extensive rear side emitter regions and method for producing the same
EP08858742A EP2223344A2 (de) 2007-12-11 2008-11-28 Rückkontaktsolarzelle mit grossflächigen rückseiten-emitterbereichen und herstellungsverfahren hierfür

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007059487 2007-12-11
DE102007059487.0 2007-12-11
DE102008030880A DE102008030880A1 (de) 2007-12-11 2008-06-30 Rückkontaktsolarzelle mit großflächigen Rückseiten-Emitterbereichen und Herstellungsverfahren hierfür
DE102008030880.3 2008-06-30

Publications (2)

Publication Number Publication Date
WO2009074469A2 WO2009074469A2 (de) 2009-06-18
WO2009074469A3 true WO2009074469A3 (de) 2009-09-24

Family

ID=40680175

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/066445 WO2009074469A2 (de) 2007-12-11 2008-11-28 Rückkontaktsolarzelle mit grossflächigen rückseiten-emitterbereichen und herstellungsverfahren hierfür

Country Status (7)

Country Link
US (1) US20110023956A1 (de)
EP (1) EP2223344A2 (de)
JP (1) JP2011507246A (de)
AU (1) AU2008334769A1 (de)
CA (1) CA2708616A1 (de)
DE (1) DE102008030880A1 (de)
WO (1) WO2009074469A2 (de)

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DE10239845C1 (de) 2002-08-29 2003-12-24 Day4 Energy Inc Elektrode für fotovoltaische Zellen, fotovoltaische Zelle und fotovoltaischer Modul
MX2011001146A (es) 2008-07-28 2011-04-12 Day4 Energy Inc Celda fotovoltaica de silicio cristalino con emisor selectivo producido con un procedimiento de grabado al agua fuerte posterior de precision y pasivacion a baja temperatura.
JP5906393B2 (ja) * 2010-02-26 2016-04-20 パナソニックＩｐマネジメント株式会社 太陽電池及び太陽電池の製造方法
TWI514599B (zh) 2010-06-18 2015-12-21 Semiconductor Energy Lab 光電轉換裝置及其製造方法
DE102010024835A1 (de) 2010-06-23 2011-12-29 International Solar Energy Research Center Konstanz Method for fabrication of a back side contact solar cell
JP5485062B2 (ja) * 2010-07-30 2014-05-07 三洋電機株式会社 太陽電池の製造方法及び太陽電池
JP4944240B1 (ja) * 2010-11-30 2012-05-30 シャープ株式会社 裏面電極型太陽電池セル、配線シート付き裏面電極型太陽電池セル、太陽電池モジュール、配線シート付き裏面電極型太陽電池セルの製造方法および太陽電池モジュールの製造方法
EP2690669A4 (de) * 2011-03-25 2014-08-20 Sanyo Electric Co Solarzelle
KR101724005B1 (ko) * 2011-04-29 2017-04-07 삼성에스디아이 주식회사 태양전지와 그 제조 방법
US8697559B2 (en) 2011-07-07 2014-04-15 Varian Semiconductor Equipment Associates, Inc. Use of ion beam tails to manufacture a workpiece
US8692111B2 (en) * 2011-08-23 2014-04-08 Sunpower Corporation High throughput laser ablation processes and structures for forming contact holes in solar cells
KR20130047320A (ko) * 2011-10-31 2013-05-08 삼성에스디아이 주식회사 태양전지와 그 제조 방법
DE102011088899A1 (de) 2011-12-16 2013-06-20 International Solar Energy Research Center Konstanz E.V. Rückkontakt-Solarzelle und Verfahren zur Herstellung einer Rückkontakt-Solarzelle
NL2008755C2 (en) * 2012-05-04 2013-11-06 Tempress Ip B V Method of manufacturing a solar cell and equipment therefore.
US8993373B2 (en) * 2012-05-04 2015-03-31 Varian Semiconductor Equipment Associates, Inc. Doping pattern for point contact solar cells
KR101622089B1 (ko) * 2013-07-05 2016-05-18 엘지전자 주식회사 태양 전지 및 이의 제조 방법
JP6206843B2 (ja) * 2013-09-09 2017-10-04 パナソニックＩｐマネジメント株式会社 太陽電池
TWM477049U (en) * 2013-09-25 2014-04-21 Inventec Solar Energy Corp Back contact electrode solar cell
DE102013220753A1 (de) 2013-10-15 2015-04-16 SolarWorld Industries Thüringen GmbH Solarzelle und Verfahren zu deren Herstellung
US20150179847A1 (en) * 2013-12-20 2015-06-25 Seung Bum Rim Built-in bypass diode
CN106463562A (zh) * 2014-04-03 2017-02-22 天合光能发展有限公司 混合型全背接触式太阳能电池及其制造方法
US20150349180A1 (en) * 2014-05-30 2015-12-03 David D. Smith Relative dopant concentration levels in solar cells
CN107430981A (zh) 2015-03-13 2017-12-01 奈特考尔技术公司 激光加工的背触异质结太阳能电池
US10217878B2 (en) 2016-04-01 2019-02-26 Sunpower Corporation Tri-layer semiconductor stacks for patterning features on solar cells
JP6211743B1 (ja) * 2016-12-13 2017-10-11 信越化学工業株式会社 高効率裏面電極型太陽電池セル、太陽電池モジュール、及び太陽光発電システム
JP6371894B2 (ja) * 2017-09-13 2018-08-08 信越化学工業株式会社 高効率裏面電極型太陽電池セル、太陽電池モジュール、及び太陽光発電システム
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Also Published As

Publication number Publication date
JP2011507246A (ja) 2011-03-03
EP2223344A2 (de) 2010-09-01
WO2009074469A2 (de) 2009-06-18
CA2708616A1 (en) 2009-06-18
DE102008030880A1 (de) 2009-06-18
US20110023956A1 (en) 2011-02-03
AU2008334769A1 (en) 2009-06-18

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