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WO2008099528A1 - Display device and method for manufacturing display device - Google Patents

Display device and method for manufacturing display device Download PDF

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Publication number
WO2008099528A1
WO2008099528A1 PCT/JP2007/068472 JP2007068472W WO2008099528A1 WO 2008099528 A1 WO2008099528 A1 WO 2008099528A1 JP 2007068472 W JP2007068472 W JP 2007068472W WO 2008099528 A1 WO2008099528 A1 WO 2008099528A1
Authority
WO
WIPO (PCT)
Prior art keywords
display device
electrode
semiconductor film
gate
substrate
Prior art date
Application number
PCT/JP2007/068472
Other languages
French (fr)
Japanese (ja)
Inventor
Ichirou Oki
Kimihiko Yamada
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Publication of WO2008099528A1 publication Critical patent/WO2008099528A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

A display device is provided with a substrate (41); a gate electrode (63) formed on the substrate (41); a gate insulating film (66) formed on the gate electrode (63); a semiconductor film (67) formed on the gate insulating film (66) with a channel region (67a); a source electrode (63) connected to one end of the semiconductor film (67), and a drain electrode (64), which is connected to the other end of the semiconductor film (67) and is connected to the source electrode (63) by having the channel region (67) in between. The source electrode (63) and the drain electrode (64) are formed on the substrate (41) to cover the gate electrode (65), the gate insulating film (66) and the semiconductor film (67), with gaps (71, 72) formed between the electrodes and the gate electrode (65).
PCT/JP2007/068472 2007-02-13 2007-09-24 Display device and method for manufacturing display device WO2008099528A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007032439 2007-02-13
JP2007-032439 2007-02-13

Publications (1)

Publication Number Publication Date
WO2008099528A1 true WO2008099528A1 (en) 2008-08-21

Family

ID=39689785

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/068472 WO2008099528A1 (en) 2007-02-13 2007-09-24 Display device and method for manufacturing display device

Country Status (1)

Country Link
WO (1) WO2008099528A1 (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009072451A1 (en) * 2007-12-03 2009-06-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
WO2009107686A1 (en) * 2008-02-27 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof, and electronic device
JP2009276758A (en) * 2008-04-17 2009-11-26 Semiconductor Energy Lab Co Ltd Light-emitting device and method of manufacturing the same
US7749820B2 (en) 2008-03-07 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
US7790483B2 (en) 2008-06-17 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof, and display device and manufacturing method thereof
JP2010212677A (en) * 2009-02-16 2010-09-24 Semiconductor Energy Lab Co Ltd Method of manufacturing thin-film transistor and method of manufacturing display device
JP2010251733A (en) * 2009-03-26 2010-11-04 Semiconductor Energy Lab Co Ltd Methods for manufacturing thin film transistor and display device
US7883943B2 (en) 2008-03-11 2011-02-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US8035107B2 (en) 2008-02-26 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
WO2011160937A1 (en) * 2010-06-21 2011-12-29 Imec Method of manufacturing thin film transistors and transistor circuits
US8101442B2 (en) 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
US8143170B2 (en) 2009-02-13 2012-03-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8202769B2 (en) 2009-03-11 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8207026B2 (en) 2009-01-28 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
CN110462842A (en) * 2017-04-07 2019-11-15 夏普株式会社 The manufacturing method of TFT substrate, the scanning antenna for having TFT substrate and TFT substrate
TWI755747B (en) * 2009-10-16 2022-02-21 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61185724A (en) * 1985-02-13 1986-08-19 Sharp Corp Production for thin film transistor
JPH03161938A (en) * 1989-11-20 1991-07-11 Seiko Instr Inc Manufacture of thin-film transistor
JPH04188770A (en) * 1990-11-22 1992-07-07 Casio Comput Co Ltd Thin-film transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61185724A (en) * 1985-02-13 1986-08-19 Sharp Corp Production for thin film transistor
JPH03161938A (en) * 1989-11-20 1991-07-11 Seiko Instr Inc Manufacture of thin-film transistor
JPH04188770A (en) * 1990-11-22 1992-07-07 Casio Comput Co Ltd Thin-film transistor

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2232561A4 (en) * 2007-12-03 2015-05-06 Semiconductor Energy Lab Manufacturing method of thin film transistor and manufacturing method of display device
WO2009072451A1 (en) * 2007-12-03 2009-06-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
US7993991B2 (en) 2007-12-03 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
US8035107B2 (en) 2008-02-26 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8901561B2 (en) 2008-02-26 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8361820B2 (en) 2008-02-27 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a liquid crystal display device
JP2014160849A (en) * 2008-02-27 2014-09-04 Semiconductor Energy Lab Co Ltd Thin film transistor
US8049221B2 (en) 2008-02-27 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2009107686A1 (en) * 2008-02-27 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof, and electronic device
US8101442B2 (en) 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
US7749820B2 (en) 2008-03-07 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
US8278662B2 (en) 2008-03-07 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
US7883943B2 (en) 2008-03-11 2011-02-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
JP2009276758A (en) * 2008-04-17 2009-11-26 Semiconductor Energy Lab Co Ltd Light-emitting device and method of manufacturing the same
US7790483B2 (en) 2008-06-17 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof, and display device and manufacturing method thereof
US8207026B2 (en) 2009-01-28 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
US8143170B2 (en) 2009-02-13 2012-03-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP2010212677A (en) * 2009-02-16 2010-09-24 Semiconductor Energy Lab Co Ltd Method of manufacturing thin-film transistor and method of manufacturing display device
JP2014238580A (en) * 2009-02-16 2014-12-18 株式会社半導体エネルギー研究所 Display device
US8709836B2 (en) 2009-02-16 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US7989234B2 (en) 2009-02-16 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US8202769B2 (en) 2009-03-11 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8441051B2 (en) 2009-03-11 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2010251733A (en) * 2009-03-26 2010-11-04 Semiconductor Energy Lab Co Ltd Methods for manufacturing thin film transistor and display device
US8372700B2 (en) 2009-03-26 2013-02-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor
TWI755747B (en) * 2009-10-16 2022-02-21 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US11837461B2 (en) 2009-10-16 2023-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011160937A1 (en) * 2010-06-21 2011-12-29 Imec Method of manufacturing thin film transistors and transistor circuits
CN110462842A (en) * 2017-04-07 2019-11-15 夏普株式会社 The manufacturing method of TFT substrate, the scanning antenna for having TFT substrate and TFT substrate
CN110462842B (en) * 2017-04-07 2022-05-17 夏普株式会社 TFT substrate, scanning antenna provided with TFT substrate, and method for manufacturing TFT substrate

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