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WO2007119643A1 - résonateur acoustique DE VOLUME en couche mince, dispositif piézoélectrique en couche mince et méthode de fabrication du dispositif piézoélectrique en couche mince - Google Patents

résonateur acoustique DE VOLUME en couche mince, dispositif piézoélectrique en couche mince et méthode de fabrication du dispositif piézoélectrique en couche mince Download PDF

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Publication number
WO2007119643A1
WO2007119643A1 PCT/JP2007/057379 JP2007057379W WO2007119643A1 WO 2007119643 A1 WO2007119643 A1 WO 2007119643A1 JP 2007057379 W JP2007057379 W JP 2007057379W WO 2007119643 A1 WO2007119643 A1 WO 2007119643A1
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WO
WIPO (PCT)
Prior art keywords
thin film
piezoelectric thin
electrode
piezoelectric
layer
Prior art date
Application number
PCT/JP2007/057379
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English (en)
Japanese (ja)
Inventor
Tetsuo Yamada
Keigo Nagao
Original Assignee
Ube Industries, Ltd.
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Filing date
Publication date
Application filed by Ube Industries, Ltd. filed Critical Ube Industries, Ltd.
Priority to JP2008510910A priority Critical patent/JP4688070B2/ja
Publication of WO2007119643A1 publication Critical patent/WO2007119643A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02133—Means for compensation or elimination of undesirable effects of stress
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02149—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/566—Electric coupling means therefor
    • H03H9/568—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/582—Multiple crystal filters implemented with thin-film techniques
    • H03H9/583—Multiple crystal filters implemented with thin-film techniques comprising a plurality of piezoelectric layers acoustically coupled
    • H03H9/585—Stacked Crystal Filters [SCF]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/582—Multiple crystal filters implemented with thin-film techniques
    • H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/588—Membranes

Definitions

  • Piezoelectric thin film resonator piezoelectric thin film device, and manufacturing method thereof
  • the present invention relates to a piezoelectric thin film used in a wide range of fields such as a thin film resonator, a thin film VCO (voltage controlled oscillator), a thin film filter, a transmission / reception switch, and various sensors used in mobile communication devices.
  • the present invention relates to a resonator and a piezoelectric thin film device which is an element to which the resonator is applied.
  • SAW Wave
  • FB AR Solidly Mounted Bulk Acoustic Wave Resonator
  • SMR Solidly Mounted Bulk Acoustic Wave Resonator
  • Filter Stacked Thin Film Bulk Wave
  • SBAR Acoustic Resonators and Filters
  • A1N in particular has a propagation velocity of elastic waves.
  • Patent Document 2 describes the configuration and manufacturing method of an air bridge type FBARZSBAR device. According to the publication, first, phosphor quartz glass (PSG) is deposited as a sacrificial layer on a silicon wafer, and after CMP, a piezoelectric resonator is fabricated on the sacrificial layer. PSG can be deposited at relatively low temperatures and diluted H
  • a large acoustic impedance which is an acoustic Bragg reflector force
  • a sandwich structure composed of a lower electrode, a piezoelectric thin film, and an upper electrode.
  • Bragg reflectors are made by alternately stacking layers of high acoustic impedance material and low acoustic impedance material. The thickness of each layer is fixed at 1Z4 at the wavelength of the resonance frequency.
  • the effective impedance at the piezoelectric Z-electrode interface can be made much higher than the acoustic impedance of the element, so that the acoustic waves in the piezoelectric body can be effectively confined.
  • the low acoustic impedance layer can also be composed of silicon oxide or aluminum forces, and the high acoustic impedance layer can be composed of tungsten, platinum, molybdenum or gold.
  • the acoustic resonator obtained by this method is called a solid acoustic mirror mounted resonator (SMR) because there is no air gap under the sandwich structure.
  • the lower electrode, the piezoelectric thin film, and the upper electrode are still formed in this order. It is also possible to realize a five-layer structure in which an insulator layer is provided below the lower electrode and above the upper electrode, and the insulator layer Z lower electrode Z piezoelectric thin film Z upper electrode Z insulator layer is formed on the semiconductor substrate. Generally adopted. Furthermore, it is also known that an insulator layer provided below the lower electrode is used as a seed layer for crystal growth, and an insulator layer provided above the upper electrode is used as a protective layer.
  • the RMS fluctuation of the height of the surface of the lower electrode serving as the underlayer is controlled to 50 nm or less, preferably 20 nm or less, and the surface of the lower electrode is remarkably increased.
  • a highly oriented A1N thin film can be deposited.
  • the rocking curve half-width (FWHM) of the (0002) diffraction peak is less than 3.0 °, which indicates good piezoelectric characteristics.
  • Patent Document 4 describes that a pattern of a lower electrode is formed by a lift-off method. Inevitably, this causes a gentle inclination, for example, an inclination having a taper angle of less than 10 °, at the outer peripheral portion of the lower electrode.
  • the taper angle is an angle (inclination angle) between the upper surface of the outer periphery of the lower electrode and the lower surface (that is, a surface in contact with the base insulating layer and parallel to the silicon substrate).
  • FIG. 1A is a schematic plan view showing an example of a piezoelectric thin film resonator
  • FIG. 1B is an XX cross-sectional view thereof
  • FIG. 1C is an enlarged view of a portion surrounded by a dotted line in FIG. 1B.
  • the piezoelectric thin film resonator 10 includes a substrate 11, a vibration space 20 formed by removing a part of the insulator layers 12 and 13 and the insulator layer 12 formed on the upper surface of the substrate 11.
  • the piezoelectric laminated structure 14 is formed so as to straddle the substrate.
  • the piezoelectric laminated structure 14 includes a lower electrode 15 formed on the upper surface of the insulating layer 13, a piezoelectric thin film 16 formed on the upper surface of the insulating layer 13 so as to cover a part of the lower electrode 15, and the piezoelectric thin film 16
  • the upper electrode 17 is formed on the upper surface of the piezoelectric thin film 16.
  • On the substrate 11, a cavity 20 forming a vibration space is formed on the substrate 11, a cavity 20 forming a vibration space is formed. A part of the insulator layer 13 is exposed toward the vibration space 20.
  • abnormal growth of A1N used as the upper insulator layer also occurs from the edge of the outer periphery of the upper electrode, whose inclination angle is almost 90 °, and deep crater-like defects between adjacent columnar A1N grains 31 Is produced.
  • FIG. 2A is a schematic plan view showing an example of another piezoelectric thin film resonator different from the above, and FIGS. 2B and 2C are an XX sectional view and a YY sectional view, respectively.
  • members having the same functions as those in FIGS. 1A to 1C are given the same reference numerals.
  • a piezoelectric thin film resonator 10 includes a substrate 11, an insulator layer 13 formed on the upper surface of the substrate 11, and a piezoelectric laminated structure formed on the upper surface of the insulator layer 13.
  • Has body 14 The piezoelectric laminated structure 14 includes a lower electrode 15 formed on the upper surface of the insulating layer 13, and a piezoelectric thin film 16 formed on the upper surface of the insulating layer 13 so as to cover a part of the lower electrode 15. And an upper electrode 17 formed on the upper surface of the piezoelectric thin film 16.
  • Patent Document 5 by Ruby et al. Discloses oxygen (O 2) and hexafluoride as etching gases.
  • a method for controlling the angle to 60 ° or less is disclosed. According to the publication, by controlling the taper angle to 60 ° or less, it is possible to suppress the generation of voids and discontinuous boundaries in the vicinity of the edge (lower electrode end) of the A1N thin film deposited and grown on the taper angle. Have been. However, in this publication, the effect of reducing voids and discontinuous boundaries in the A1N thin film is as follows: Dielectric breakdown strength, Power handling capacity, and electrostatic: The improvement effect of Electrostatic discharge (ESD)) is just mentioned.
  • ESD Electrostatic discharge
  • Patent Document 6 by Ginsburg et al. Discloses a method in which a taper angle is controlled to 30 ° or less by providing an inclination at the end of the lower electrode by a dry etching method. According to the same report, it is described that by controlling the taper angle to 30 ° or less, the generation of cracks in the vicinity of the edge of the AIN thin film deposited and grown thereon can be suppressed.
  • this publication only reports that the production yield of a die that becomes a piezoelectric thin film resonator is improved by 15 to 80% as an effect of reducing cracks in the A1N thin film.
  • the inclination angle of the upper electrode end is close to 90 °, and the outer periphery of the upper electrode is a membrane 21 above the vibration space 20. Extends beyond the outer perimeter of the insulation Thickness is supported by the substrate 11 through the body layer 13.
  • Patent Document 1 JP-A-60-142607
  • Patent Document 2 JP 2000-69594 A
  • Patent Document 3 JP-A-6-295181
  • Patent Document 4 Japanese Patent Laid-Open No. 2005-236337
  • Patent Document 5 US Patent Application Publication No. 20030141946
  • the present invention solves the above-mentioned characteristic problems associated with the provision of a slope on the outer periphery of the lower electrode or the upper electrode, thereby taking advantage of the features of the A1N thin film,
  • Q value acoustic quality factor
  • the present inventors have determined how the properties of the aluminum nitride thin film, which greatly affects the resonance characteristics of FBAR, SMR, or SBAR, are affected by the shape and material of the outer periphery of the lower electrode or the upper electrode. We studied earnestly about whether to receive. As a result, a side spacer made of a material different from that of the lower electrode or the upper electrode is provided adjacent to the outer peripheral portion of the lower electrode or the upper electrode, and the side spacer and the outer peripheral portion of the lower electrode or the upper electrode are provided.
  • the aluminum nitride thin film formed between the lower electrode and the upper electrode can be locked with high crystallinity without crater-like separation growth, and the half width of the curve (FWHM) 2.0.
  • the acoustic quality factor (Q value) is large, the electromechanical coupling coefficient is large, the loss is low, and the performance is high.
  • the present inventors have found that FBAR, SMR or SBAR can be realized.
  • a side spacer having a different material from that of the electrode is disposed around an outer peripheral portion of at least one of the lower electrode and the upper electrode, and a step at an interface between the side spacer and the electrode.
  • a piezoelectric thin film resonator is provided, characterized in that is less than 25 nm.
  • the piezoelectric thin film is made of aluminum nitride (A1N).
  • the piezoelectric thin film having the aluminum nitride force also has a (0002) diffraction peak rocking 'curve half width (FWHM) of 0.8 to 1.6 °.
  • the step at the interface between the side spacer and the electrode is less than 3 nm.
  • the side spacer 1 has an upper surface formed in a slope shape with respect to the lower surface.
  • the side spacer has an upper surface tilt angle of 3 to 45 degrees with respect to the lower surface.
  • the acoustic impedance of the side spacer is larger than the acoustic impedance of the electrode.
  • the side spacer 1 also has an insulator strength.
  • the side spacer is made of silicon dioxide)), silicon nitride (Si
  • Si ON silicon oxynitride
  • Al nitride Al nitride
  • AIO aluminum oxynitride
  • the side spacer 1 also has a conductor force.
  • the side spacer is made of a conductor whose main component is at least one material selected from a group force including tungsten (W), tungsten silicide (WSi), and iridium (Ir) forces. .
  • At least one of the upper electrode and the lower electrode is also a molybdenum denka. In one embodiment of the present invention, at least one of the upper electrode and the lower electrode is one selected from the group consisting of molybdenum, ruthenium, aluminum, iridium, cobalt, nickel, platinum, and copper metal. It is comprised by the laminated body of.
  • the lower electrode is a laminate of a lower metal layer having a thickness dl and an upper metal layer having a thickness d2, and dlZd2> l and 150 nm ⁇ (dl + d2) ⁇ 450 nm.
  • the upper electrode is a laminate of a lower metal layer having a thickness of d3 and an upper metal layer having a thickness of d4, d4Zd3> l and 150 nm ⁇ (d3 + d4) ⁇ 45 Onm.
  • the vibration region defined as a region where the lower electrode and the upper electrode overlap each other when viewed in the thickness direction of the piezoelectric multilayer structure is the vibration space. Or it is located inside the outer periphery of the acoustic reflection layer.
  • the relational expression 0 ⁇ wZt ⁇ 2 is satisfied.
  • a piezoelectric thin film device configured by combining a plurality of the above-described piezoelectric thin film resonators.
  • the piezoelectric thin film resonator includes a stacked piezoelectric thin film resonator.
  • Examples of the piezoelectric thin film device include, but are not limited to, a VCO (voltage controlled oscillator), a filter, and a transmission / reception switch configured using the piezoelectric thin film resonator and the laminated piezoelectric thin film resonator as described above. It ’s not something. In such a piezoelectric thin film device, the characteristics at a high frequency of 1 GHz or more can be remarkably improved.
  • a piezoelectric process comprising: a sixth step of forming the piezoelectric thin film by patterning the piezoelectric material layer; and a seventh step of forming an upper insulating layer on the piezoelectric thin film and the upper electrode.
  • an insulator or a conductive material having a material different from that of the upper electrode is formed on the exposed surfaces of the upper electrode and the piezoelectric material layer between the fifth step and the sixth step. After the body is deposited, the upper surface of the upper electrode is exposed by etch back, and the step of forming the side spacer for the upper electrode is provided around the outer periphery of the upper electrode.
  • a method of manufacturing a piezoelectric thin film resonator comprising: a seventh step of forming an upper insulating layer on the piezoelectric thin film and the upper electrode;
  • a side surface made of a material different from that of the lower electrode and the upper electrode is formed on the outer periphery of at least one of the lower electrode and the upper electrode.
  • a spacer is provided, and an aluminum nitride thin film is formed between the upper and lower electrodes produced by controlling the caking method so that the step at the interface between the side spacer and the electrode is less than 25 nm.
  • the rocking curve half-width (FWHM) of the (0002) diffraction peak is 2.0 ° or less
  • FWHM rocking curve half-width
  • a highly oriented and highly crystalline c-axis oriented aluminum nitride thin film of 0.8 to 1.6 ° can be formed.
  • the side spacer is formed around the electrode in contact with the side wall of the outer periphery of the electrode.
  • the side spacer By providing the side spacer, the adverse effect on the piezoelectric characteristics caused by the inclination of the lower electrode or the upper electrode end, which has been a problem with conventional piezoelectric thin film resonators, can be eliminated.
  • coupling coefficient k 2 and the piezoelectric thin-film resonator of excellent performance and high reliability in the acoustic quality factor (Q value) can be provided. Therefore, the piezoelectric thin film devices such as VCO (Voltage Controlled Oscillator), filter, and duplexer configured using the same can remarkably improve the characteristics at a frequency higher than 1 GHz.
  • VCO Voltage Controlled Oscillator
  • FIG. 1A is a schematic plan view showing an example of a piezoelectric thin film resonator.
  • FIG. 1B is a cross-sectional view taken along the line XX in FIG. 1A.
  • FIG. 2A is a schematic plan view showing an example of a piezoelectric thin film resonator.
  • 2B is a cross-sectional view taken along the line XX in FIG. 2A.
  • FIG. 2C is a Y-Y sectional view of FIG. 2A.
  • FIG. 3 is a cross-sectional view showing an example in which a gentle slope is provided by changing the cross-sectional shape of the outer periphery of the lower electrode in the piezoelectric thin film resonator of FIGS. 2A to 2C.
  • FIG. 4A is a schematic plan view showing an embodiment of a piezoelectric thin film resonator according to the present invention.
  • FIG. 4B is a cross-sectional view taken along the line XX in FIG. 4A.
  • FIG. 4C is an enlarged view of a portion surrounded by a dotted line in FIG. 4B.
  • FIG. 5A is a schematic cross-sectional view for explaining a step of forming a side spacer around the side wall of the lower electrode.
  • FIG. 6A is a schematic cross-sectional view for explaining a step of forming a side spacer around the side wall of the lower electrode.
  • FIG. 6B is a schematic cross-sectional view for explaining a step of forming a side spacer around the side wall of the lower electrode.
  • FIG. 7A is a schematic plan view showing an embodiment of a piezoelectric thin film resonator according to the present invention.
  • FIG. 7B is a cross-sectional view taken along the line XX in FIG. 7A.
  • FIG. 7D is an enlarged view of a portion surrounded by a dotted line in FIG. 7C.
  • FIG. 8A is a schematic plan view showing an embodiment of a multilayer piezoelectric thin film resonator according to the present invention.
  • FIG. 8B is an XX cross-sectional view of FIG. 8A.
  • FIG. 9 is a schematic plan view of a thin film piezoelectric filter as an embodiment of the piezoelectric thin film device of the present invention.
  • FIG. 4A is a schematic plan view showing an embodiment of a piezoelectric thin film resonator according to the present invention
  • FIG. 4B is an XX cross-sectional view thereof
  • FIG. 4C is an enlarged view of a portion surrounded by a dotted line in FIG. 4B.
  • the piezoelectric thin film resonator 10 includes a substrate 11, an insulating layer 12 formed on the upper surface of the substrate 11, a lower insulating layer 13, and a cavity formed by removing a part of the insulating layer 12.
  • the piezoelectric laminated structure 14 is formed so as to straddle the vibration space 20.
  • substrate said by this invention is comprised by the member which consists of the board
  • the insulating layer 12 is referred to as a substrate insulating layer.
  • a vibration space 20 is formed on the substrate.
  • the piezoelectric laminated structure 14 includes a lower electrode 15 formed on the upper surface of the lower insulating layer 13, and a piezoelectric thin film 16 formed on the upper surface of the lower insulating layer 13 so as to cover a part of the lower electrode 15. And an upper electrode 17 formed on the upper surface of the piezoelectric thin film 16. A part of the lower insulating layer 13 is exposed toward the vibration space 20.
  • the lower electrode 15 and the upper electrode 17 are formed of main portions 15a and 17a formed in a region corresponding to the membrane 21, and terminal portions 15b for connecting the main portions 15a and 17a to an external circuit. 17b.
  • the terminal portions 15b and 17b are located outside the region corresponding to the membrane 21.
  • the vibration space As a method of forming the vibration space 20, via holes 19 penetrating each layer of the piezoelectric multilayer structure and the lower insulating layer 13 are opened, and an etching solution such as a hydrofluoric acid aqueous solution is injected from the via holes 19 to form the substrate insulating layer 12. A method of removing a part of the lower region of the piezoelectric multilayer structure including a part by wet etching is included.
  • the vibration space may be formed by deep etching (Deep RIE) of the lower surface side of the substrate 11.
  • the vibration space may be any shape of cavity or recess as long as it allows vibration of the membrane 21.
  • an acoustic reflection layer (by alternately laminating high acoustic impedance material layers and low high acoustic impedance material layers) It is also possible to form an acoustic mirror type piezoelectric thin film resonator by forming an acoustic Bragg reflector.
  • a silicon oxide film formed by thermal oxidation of the surface of the substrate 11 can be used as the substrate insulating layer 12.
  • the lower insulating layer 13 preferably has a high elastic modulus and material strength.
  • dielectric film mainly composed of aluminum nitride (A1N),
  • Dielectric films composed mainly of tantalum (Ta 2 O 3) and these dielectric films are stacked
  • a laminated film can be used.
  • the main component refers to a component whose content in the dielectric film is 50 equivalent% or more.
  • the dielectric film may be a single layer or a laminate. Furthermore, it may be a multi-layer force with a layer attached to improve adhesion.
  • Examples of the method of forming the lower insulating layer 13 include a sputtering method, a vacuum deposition method, and a CVD method.
  • the lower insulating layer 13 in the region corresponding to the membrane 21 is entirely removed by etching, and the lower electrode 15 is exposed toward the vibration space 20 (that is, the membrane removes the lower insulating layer 13).
  • a piezoelectric thin film resonator having a structure may also be employed.
  • removing all of the insulating layer 13 in the region corresponding to the membrane 21 has an advantage of improving the electromechanical coupling coefficient although the temperature characteristic of the resonance frequency is slightly deteriorated.
  • the lower electrode 15 includes, for example, a metal thin film mainly composed of molybdenum (Mo), a metal thin film mainly composed of ruthenium (Ru), a metal thin film mainly composed of aluminum (A1), and an iridium (Ir ) Metal thin film, cobalt (Co) metal thin film, nickel (I r) metal thin film, platinum (Pt) metal thin film, copper (Cu) At least one metal thin film selected from metal thin films containing as a main component, a metal thin film containing molybdenum as a main component, and a group force consisting of ruthenium, aluminum, iridium, cobalt, nickel, platinum and copper power at least one selected It consists of a stack of metal thin films composed mainly of various metals.
  • a metal thin film mainly composed of molybdenum means that 90% or more of molybdenum is contained.
  • the lower electrode 15 may be formed by stacking an adhesion metal layer (adhesion layer) formed between the metal thin film and the lower insulating layer 13 as necessary. The part of the lower electrode other than the adhesive metal layer is called the lower electrode main layer.
  • Lower electrode 15 Thickness ⁇ , 150-450mn force! / ⁇ .
  • a metal thin film having a thickness d2 (second metal layer: upper metal layer) and a metal thin film having a thickness dl (first metal layer: lower metal layer) can be used.
  • a thin film can be exemplified.
  • the thickness dl is a value including the thickness of the adhesion layer.
  • the thickness d2 of the upper metal layer and the thickness dl of the lower metal layer it is preferable to adopt a film thickness configuration in which d lZd2> l and 150 nm (dl + d2) and 450 nm.
  • a highly oriented upper metal layer for example, a metal thin film mainly composed of molybdenum
  • the lower metal layer for example, a metal thin film mainly composed of aluminum
  • the piezoelectric thin film Is preferable.
  • the upper electrode 17 mainly includes a metal thin film mainly composed of ruthenium, a metal thin film mainly composed of aluminum, and iridium in addition to a metal thin film mainly composed of molybdenum. At least one metal thin film selected from a metal thin film containing cobalt, a metal thin film containing cobalt as a main component, a metal thin film containing nickel as a main component, a metal thin film containing platinum as a main component, and a metal thin film containing copper as a main component And a laminate of a metal thin film mainly composed of molybdenum and a metal thin film composed mainly of at least one metal selected from the group consisting of ruthenium, aluminum, iridium, cobalt, nickel, platinum and copper.
  • the upper electrode 17 may be formed by laminating an adhesion metal layer (adhesion layer) formed between the metal thin film and the piezoelectric thin film 16 as described above. Adhesive metal layer or higher The part of the outer upper electrode is called the upper electrode main layer.
  • the thickness of the upper electrode 17 is preferably 150 to 450 nm.
  • the thickness d4 is a value including the thickness of the adhesion layer.
  • the thickness d3 of the lower metal layer and the thickness d4 of the upper metal layer it is preferable to adopt a film thickness configuration in which d4Zd3> l is 150 nm (d3 + d4) and 450 nm.
  • the lower metal layer for example, a metal thin film mainly composed of molybdenum
  • the upper metal layer for example, a metal thin film mainly composed of aluminum
  • the piezoelectric thin film it is preferable when intervening.
  • an aluminum nitride (A1N), an aluminum oxynitride (AIO N), an aluminum oxide (Al 2 O 3), a silicon nitride (SiN), an acid, or the like is formed on the upper electrode 17 as necessary.
  • Si ON silicon nitride
  • ZrO zirconium oxide
  • Ta 2 O 3 tantalum oxide
  • the inventors have the resonance characteristics such as the material, shape and crystallinity of the lower electrode, or the orientation and crystallinity of the A1N thin film. We examined how it depends on the properties!
  • the piezoelectric laminated structure 14 includes the lower electrode 15 and the upper electrode 17.
  • the side spacer 26 is formed around the outer periphery of at least one of the electrodes and is made of a material different from that of the electrode.
  • the side spacer 26 is made of an insulator or a conductor and is formed in a slope shape.
  • the insulator or conductor used for the side spacers 26 is preferably made of a material other than resin, preferably having a bulk density of 1.6 gZcm 3 or more.
  • a gate electrode of a MOS (Metal—Oxide—Semiconductor) type transistor, a gate insulating film (gate oxide) Sidewall spacer technology that is generally applied to the formation of side walls of the film can be employed.
  • MOS Metal—Oxide—Semiconductor
  • gate oxide gate insulating film
  • FIG. 5A and FIG. 5B are schematic cross-sectional views for explaining a process of forming a side spacer around the outer peripheral portion (side wall) of the lower electrode.
  • the side spacers first, as shown in FIG. 5A, the entire surface of the lower insulating layer 13 is covered by a low-pressure CVD method so as to cover the patterned lower electrode 15 (see FIG. 5A).
  • SiO) (LP—TEOS) force LP—TEOS
  • the upper surface of the lower electrode 15 is exposed by an anisotropic dry etching method using ICP plasma so that the upper surface and the surface of the SiO film are smoothly connected.
  • the side spacer 26 is formed.
  • anisotropic dry etching and surface polishing (CMP) can be used in combination.
  • FIG. 6A and FIG. 6B are also schematic cross-sectional views for explaining the process of forming the side spacer around the side wall of the lower electrode.
  • tungsten (W) by a low temperature CVD method is applied to the entire surface of the lower insulating layer 13 so as to cover the patterned lower electrode 15.
  • LT-W tungsten
  • conductive film 25 300 Deposit to a thickness of ⁇ 900nm.
  • a monosilane-based WSi (LT-WSi) film can be formed by a low temperature CVD method.
  • the upper surface of the lower electrode 15 is exposed by using an anisotropic dry etching method or surface polishing method (CMP) using ECR plasma and a dry etching method in combination. Etch back until the upper surface and the surface of the SiO film are connected smoothly.
  • CMP surface polishing method
  • the side spacer 26 is formed leaving the W film only around the side wall of the lower electrode 15.
  • the etch back conditions are set so that the step at the interface between the electrode and the side spacer is less than 25 nm, preferably less than 10 nm, more preferably less than 3 nm. Is to control.
  • the level difference between the two is 25 nm or more, abnormal growth of A1N due to the level difference is likely to occur, and deep crater-like defects may occur between adjacent columnar AIN grains. This crater is not preferable because it causes damage to the A1N film and impairs its reliability as a piezoelectric thin film resonator.
  • the thickness d5 of the lower insulating layer 13 formed in contact with the lower surface of the lower electrode is 25 to 300 nm, preferably 30 to 200 nm.
  • the crystal orientation of the metal thin film mainly composed of molybdenum, ruthenium, aluminum, iridium, cobalt, nickel, platinum, copper, etc. deposited thereon is poor.
  • the rocking 'curve half-value width of the corresponding X-ray diffraction peak tends to widen.
  • the broadening of the rocking 'curve half-width of the metal thin film that serves as the lower electrode brings about a decrease in the crystal orientation of the A1N thin film deposited on the upper surface. If the thickness of the lower insulating layer 13 exceeds 300 nm, the electromechanical coupling coefficient of the obtained piezoelectric thin film resonator tends to decrease, and the piezoelectric characteristics tend to deteriorate.
  • the thickness d6 of the upper insulating layer 23 formed in contact with the upper surface of the upper electrode is preferably 40 to 600 nm. Furthermore, the ratio between the thickness d5 of the lower insulating layer 13 formed in contact with the lower surface of the lower electrode and the thickness d6 of the upper insulating layer 23 formed in contact with the upper surface of the upper electrode d6 Zd5 force l ⁇ d6Zd5 ⁇ 4 It is preferable to control the thickness d5 and the thickness d6 so as to satisfy the relationship. [0066] By forming the upper insulating layer 23 in contact with the upper surface of the upper electrode, spurious near the resonance peak of the obtained piezoelectric thin film resonator is reduced.
  • the spurious reduction effect is large.
  • the thickness d6 of the upper insulating layer 23 is less than 40 nm, the spurious suppression effect tends to be remarkably reduced.
  • the thickness d6 of the upper insulating layer 23 exceeds 600 nm, the piezoelectric characteristics such as the electromechanical coupling coefficient and the acoustic quality factor (Q value) of the obtained piezoelectric thin film resonator tend to be poor.
  • the upper insulating layer 23 is made of a chemically stable material, and there is an effect that the environmental resistance of the obtained piezoelectric thin film resonator is improved.
  • the rocking 'curve half-value width of the metal thin film such as molybdenum constituting the upper electrode 17 is controlled to be 3 ° or less, a highly oriented upper insulating layer is formed and good spurious Reduction effect and excellent environmental resistance can be realized.
  • the vibration space 20 can be formed as follows. That is, after forming the substrate insulating layer 12 on the upper surface of the substrate 11, a pattern-like sacrificial layer is formed on the vibration space forming region of the substrate insulating layer 12. A lower insulating layer 13 and a piezoelectric laminated structure 14 (and an upper insulating layer 23) are formed thereon. Via hole 19 is formed by deep etching (Deep RIE (Reactive Ion Etching)) from the upper side of the figure (upper insulating layer 23 and) through the layers constituting piezoelectric laminated structure 14 and insulating layer 13 to form a sacrificial layer.
  • Deep RIE Reactive Ion Etching
  • An etching solution is injected from the via hole 19 to remove the sacrificial layer and the substrate insulating layer 12 in the vibration space forming region, thereby forming a vibration space 20 that is a cavity.
  • a thin film laminated on the vibration space 20 constitutes the membrane 21.
  • the A1N thin film 16 on the vibration space 20 the lower electrode 15 and the upper electrode 17 sandwiching the A1N thin film constitute a piezoelectric laminated structure 14, and as described above, the piezoelectric laminated structure 14 At least one of them is aluminum nitride (A1N), aluminum oxynitride (AIO N), aluminum oxide (Al 2 O 3), silicon nitride (SiN), silicon oxynitride (Si ON), zirconium oxide
  • the main component is at least one material selected from (ZrO) and tantalum oxide (TaO).
  • Insulating layers 13 and 23 exist.
  • Examples of the method for forming a metal thin film containing as a main component at least one metal selected from the group consisting of (Cu) include a sputtering method and a vacuum evaporation method.
  • a thin film containing these metals as a main component can usually be easily formed by a DC magnetron sputtering method or an RF magnetron sputtering method.
  • the melting point of molybdenum (Mo), ruthenium (Ru) and iridium (Ir) is high! / Because of its high melting point (melting point of ruthenium 2310 ° C).
  • the melting point of molybdenum is 2620 ° C, the melting point of tungsten is 3410 ° C), and it is difficult to produce a thin film by resistance heating evaporation, so it is necessary to use electron beam evaporation.
  • ruthenium is known to be hexagonal, and molybdenum, aluminum, iridium, conoleto, nickel, platinum and copper are known to be cubic.
  • FWHM rocking curve half-width
  • the thickness and the microstructure of the insulating film serving as a base layer both by controlling the ultra-high vacuum sputtering apparatus (ultimate vacuum: 10 _6 Pa or less, preferably 4xl0_ 7 Pa ) And optimized film formation conditions such as film formation pressure, film formation temperature, DC output or RF output, making it possible to deposit highly oriented metal crystal films.
  • pretreatment such as heat treatment before film formation or soft etching.
  • the present inventors controlled the deposition conditions of the metal thin film used as the lower electrode 15 to improve the crystal orientation, and then nitrided the metal thin film or the metal thin film laminate.
  • a highly oriented and highly crystalline c-axis oriented aluminum nitride thin film with a rocking 'curve half-width (FWHM) of (0002) diffraction peak of 0.8 to 1.6 ° is obtained.
  • FWHM rocking 'curve half-width
  • the lower electrode 15 is formed by forming a metal thin film mainly composed of at least one metal selected from the group consisting of an adhesion metal layer deposited as necessary and the above-mentioned various metals in this order. It is formed by patterning these metal thin films into a predetermined shape using a lithography technique.
  • the A1N thin film 16 can be formed on the upper surface of the lower insulating layer 13 on which the lower electrode 15 is formed by reactive sputtering.
  • the upper electrode 17 is formed by forming a metal thin film mainly composed of at least one metal selected from the group consisting of the various metals described above, and then using the photolithography technique in the same manner as the lower electrode 15.
  • the A1N thin film 16 is patterned into a predetermined shape by etching away a portion of the A1N thin film 16 except for the portion on the vibration space 20 by using a photolithography technique.
  • the present inventors provide a side spacer 26 made of a material different from the electrode around the outer periphery of the lower electrode 15 or the upper electrode 17.
  • the side spacer 26 is formed in a slope shape, and the upper and lower electrodes of the upper and lower electrodes are manufactured by controlling the shielding method so that the step difference at the interface between the electrode and the side spacer 26 is less than 25 nm.
  • Silicon Si ON
  • aluminum nitride A1N
  • aluminum oxynitride AIO N
  • 2 3 2 2 5 Can be formed of an insulator mainly composed of at least one material selected from the group
  • the side spacer 26 also having a conductor force is formed of a conductor mainly composed of at least one material selected from the group force of tungsten (W), tungsten silicide (WSi), and iridium (Ir) forces. can do.
  • the side spacer 26 made of an insulator or a conductor is formed in a slope shape, and the inclination angle with respect to the lower surface of the upper surface of the slope is preferably 3 to 45 °.
  • the inclination angle is smaller than 3 °, the slope length becomes too long, and it becomes difficult to ensure the dimensional accuracy in the plane direction of each layer constituting the piezoelectric thin film resonator. Piezoelectric properties such as coupling coefficient and acoustic quality factor (Q value) tend to deteriorate.
  • Q value acoustic quality factor
  • the inclination angle of the electrode side wall surface with respect to the lower surface of the electrode is 70 to 90 ° (that is, substantially vertical).
  • the acoustic quality factor (Q value) of the obtained piezoelectric thin film resonator is improved, and it has excellent characteristics such as insertion loss, roll-off steepness and cutoff characteristics.
  • a high performance piezoelectric thin film resonator can be manufactured.
  • the piezoelectric thin film resonator of the present invention is a resonator as described above, and is a vibration space or a semiconductor having an acoustic reflection layer.
  • a substrate made of an insulator and a vibration space of the substrate.
  • a piezoelectric thin film resonator having at least a lower electrode, an aluminum nitride piezoelectric thin film, and an upper electrode arranged in order at a position facing the acoustic reflection layer, wherein at least one of the lower electrode and the upper electrode is , Another layer of different material on the outer periphery And there is a step at the interface between the electrode (electrode body) and the side spacer arranged around it.
  • Such a piezoelectric laminated structure has excellent piezoelectric characteristics and high reliability, and a piezoelectric thin film resonator using the piezoelectric laminated structure has excellent frequency characteristics with low loss.
  • the lower electrode 15 and the upper electrode 17 overlap each other in the thickness direction (that is, when viewed in the thickness direction of the piezoelectric laminated structure 14). It is preferable that the vibration region defined as the region is inside the edge of the membrane 21 (that is, the outer peripheral edge of the vibration space 20). By maintaining such a positional relationship, the Q value of the piezoelectric thin film resonator can be increased. When the vibration region extends outside the membrane edge, the Q value of the piezoelectric thin film resonator tends to decrease.
  • the distance between the end (edge) of the vibration region and the membrane edge (corresponding to the outer periphery of the vibration space) is w
  • the thickness of the piezoelectric laminated structure 14 in the vibration region is insulated from the thickness.
  • the resistances of the lower electrode 15 and the upper electrode 17 affect the loss of resonance characteristics. Therefore, in the present invention, it is preferable to control the formation conditions of the metal thin film so that the specific resistance of the lower electrode and the upper electrode, which cause the loss of the input signal, becomes a sufficiently small value.
  • the specific resistance of the electrode is controlled to be 5 to 20 ⁇ 'cm. By setting the specific resistance to a value within this range, it is possible to reduce the loss of the input high-frequency signal and realize good resonance characteristics.
  • a Balta elastic wave is excited by applying a voltage to the upper and lower electrodes 15, 17 of the piezoelectric thin film 16. For this reason, it is necessary to expose the lower electrode 15 to be a terminal electrode. To construct a filter using resonators with this configuration, it is necessary to connect two or more resonators in combination. In this case, if the electric resistance of the metal thin film is large, loss due to the connection wiring occurs. . For this reason, in the present invention, the conditions for forming the metal thin film are controlled so that the specific resistance of the lower electrode 15 and the upper electrode 17 that cause the loss of the input signal becomes a sufficiently small value. For example, by controlling the electrode specific resistance to be 5 to 20 ⁇ 'cm, it is possible to reduce the loss of the input high-frequency signal and realize good filter performance.
  • FIG. 7A is a schematic plan view showing another embodiment of the piezoelectric thin film resonator according to the present invention
  • FIGS. 7B and 7C are an XX sectional view and a YY sectional view, respectively.
  • FIG. 7D is an enlarged view of a portion surrounded by a dotted line in FIG. 7C.
  • members having the same functions as those in FIGS. 4A, 4B and 4C are given the same reference numerals.
  • the piezoelectric thin film resonator 10 includes a substrate 11, a lower insulating layer 13 formed on the upper surface of the substrate 11, and a piezoelectric laminated structure 14 formed on the upper surface of the lower insulating layer 13. Furthermore, an upper insulating layer 23 is formed on the upper surface of the piezoelectric laminated structure 14.
  • the piezoelectric laminated structure 14 includes a lower electrode 15 formed on the upper surface of the insulating layer 13, a piezoelectric thin film 16 formed on the upper surface of the lower insulating layer 13 so as to cover a part of the lower electrode 15, and the piezoelectric thin film 16 An upper electrode 17 formed on the upper surface of the piezoelectric thin film 16 is included.
  • the lower electrode 15 has a shape close to a rectangle and has a main body 15a and a terminal 15b for connecting the main body 15a to an external circuit.
  • the upper electrode 17 has a main body portion 17a formed in a region corresponding to the vibration space 20, and a terminal portion 17b for connecting the main body portion 17a and an external circuit.
  • the terminal portions 15b and 17b are located outside the region corresponding to the vibration space 20.
  • At least one of lower electrode 15 and upper electrode 17 includes a layer containing molybdenum as a main component. It is formed with a metal thin film of ⁇ 450nm.
  • the lower electrode 15 is made of a metal thin film mainly composed of molybdenum and has a thickness of 150 to 450 nm.
  • the upper electrode 17 is a laminate of a metal thin film with a thickness of d3 mainly composed of molybdenum and a metal thin film with a thickness of d4 mainly composed of aluminum, and the thicknesses d3 and d4 of the respective metal thin films are d4 / d3> l Powerful 150nm ⁇ (d3 + d4) ⁇ 450nm and!
  • the d3 metal thin film which has high acoustic impedance and is mainly composed of highly oriented molybdenum thin film, is interposed between the d4 metal thin film, whose main component is aluminum, and the piezoelectric thin film. It is preferable.
  • An upper insulating layer 23 is formed in contact with the upper surface of the upper electrode.
  • lithography 1 Patterned into a predetermined shape by lithography 1 and, if necessary, coated with a photoresist for micromachining, and the same as the SiO mask on the bottom surface of the substrate by photolithography.
  • the vibration space 20 having a depth, a prismatic shape, or a columnar shape with the side walls standing vertically is formed.
  • FIGS. 7B and 7C it is possible to obtain a vibration space in which the membrane 21 and the opening on the back surface of the substrate have substantially the same planar shape and dimensions.
  • a side spacer made of a material different from the electrode is provided around the outer periphery of the lower electrode or the upper electrode, and the side spacer is formed in a slope shape, Crater-like separation is achieved by forming an aluminum nitride piezoelectric thin film between the upper and lower electrodes produced by controlling the processing method so that the step at the interface between the electrode and the side spacer is less than 25 nm.
  • a highly oriented and highly crystalline c-axis oriented aluminum nitride thin film with no growth can be obtained, and the adverse effects on the piezoelectric properties due to the tilt of the edge of the lower electrode or upper electrode can be eliminated.
  • the angle of inclination with respect to the lower surface of the upper surface of the slope in the side spacer formed in a slope shape is defined as 0 1.
  • the tilt angle ⁇ 1 is 3 to 45 °.
  • the inclination angle ⁇ 1 is smaller than 3 °, the slope length becomes too long, and it becomes difficult to ensure the dimensional accuracy in the plane direction of each layer constituting the piezoelectric thin film resonator. Piezoelectric properties such as coupling coefficient and acoustic quality factor (Q value) deteriorate.
  • the inclination angle ⁇ 1 exceeds 45 °, crater-like separated growth of the aluminum nitride piezoelectric thin film tends to occur easily from the boundary between the electrode body and the side spacer or from one end of the side spacer.
  • the inclination angle ⁇ 2 with respect to the lower surface of the upper surface of the electrode body is 70 to 90 ° (ie, vertical).
  • the acoustic quality factor (Q value) of the obtained piezoelectric thin film resonator is improved, and characteristics such as insertion loss, roll-off steepness, and cutoff characteristics are excellent.
  • High performance piezoelectric thin film resonators can be manufactured.
  • the multilayer piezoelectric thin film resonator of the present invention has a substrate 11 made of a semiconductor or an insulator having a vibration space 20 and a surface facing at least the vibration space 20 on the substrate, as shown in FIGS.
  • the lower insulating layer 13 and the piezoelectric laminated structure are sequentially arranged in a region including the region to be processed.
  • the piezoelectric laminated structure has a lower electrode 15, a first aluminum nitride piezoelectric thin film 16-1, an internal electrode 17 ′, a second aluminum nitride piezoelectric thin film 16-2, and an upper electrode 18. At least one of the lower electrode 15, the internal electrode 17 ′, and the upper electrode 18 has a side spacer 26, which is another layer made of a different material, around the outer peripheral portion thereof. The step at the interface with spacer 26 is less than 25 nm.
  • This embodiment is a SBAR having a piezoelectric laminated structure corresponding to a laminate of two piezoelectric laminated structures according to the embodiments shown in FIGS. 7 to 7D. That is, the lower electrode 15, the first piezoelectric thin film 16-1, the internal electrode 17 ', the second piezoelectric thin film 16-2, and the upper electrode 18 are formed on the lower insulating layer 13 in this order.
  • the internal electrode 17 ' has a function as an upper electrode for the first piezoelectric thin film 16-1 and a function as a lower electrode for the second piezoelectric thin film 16-2.
  • the multilayer piezoelectric thin film resonator (SBAR) of the present invention has a structure including the configurations of the lower electrode, the piezoelectric layer, and the upper electrode of the present invention, and the pressure of the present invention. It is one Embodiment of an electrothin film resonator.
  • an input voltage can be applied between the lower electrode 15 and the internal electrode 17 ′, and the voltage between the internal electrode 17 ′ and the upper electrode 18 can be taken out as an output voltage.
  • This itself can be used as a multipole filter.
  • a multipole filter having such a configuration as a component of a passband filter the attenuation characteristics of the stopband are improved and the frequency response as a filter is improved.
  • the resonance frequency f and antiresonance frequency f in the impedance characteristics measured using a microwave prober are related to the electromechanical coupling.
  • the electromechanical coupling coefficient k 2 was calculated using the following force.
  • the resonance frequency and the anti-resonance in the range of 1.5 to 2.5 GHz In the piezoelectric thin film resonator or laminated piezoelectric thin film resonator having the configuration shown in FIGS. 4A to 4C, FIGS. 7A to 7D, and FIGS. 8A and 8B, the resonance frequency and the anti-resonance in the range of 1.5 to 2.5 GHz.
  • the electromechanical coupling coefficient k 2 obtained from the measured resonance frequency is 6.0% or more.
  • the electromechanical coupling coefficient k 2 is less than 6.0%, the bandwidth of the piezoelectric thin film filter manufactured by combining these piezoelectric thin film resonators is reduced, and it is practically used as a piezoelectric thin film device used in a high frequency range. It tends to be difficult to provide.
  • FIG. 9 shows a schematic plan view of a thin film piezoelectric filter as an embodiment of the piezoelectric thin film device of the present invention.
  • five piezoelectric thin film resonators 2 10, 220, 230, 240, and 250 are formed using a common substrate. These piezoelectric thin film resonators are all of the embodiment shown in FIGS. 7A and 7B.
  • the lower electrode terminal portions 15b of the piezoelectric thin film resonators 210, 220, and 240 are connected to each other, and the upper electrode terminal portions 17b of the piezoelectric thin film resonators 220, 230, and 250 are connected to each other.
  • an air gap type piezoelectric thin film resonator is manufactured.
  • an acoustic mirror type piezoelectric thin film resonator can also be manufactured by the same technique.
  • a piezoelectric thin film resonator having the structure shown in FIGS. 4A, 4B, and 4C was fabricated as follows.
  • a 1500 nm thick SiO layer is formed on both sides of a 625 ⁇ m thick Si wafer by thermal oxidation.
  • a 50 nm thick Ti thin film is deposited as a sacrificial layer on the SiO layer on the upper surface of the Si wafer.
  • a pattern was formed into a desired air bridge shape (that is, a shape corresponding to a desired vibration space) by photolithography.
  • the lower insulating layer (lower insulating layer) with the thickness shown in Table 1 is formed on the exposed surfaces of the sacrificial layer and the SiO layer by reactive sputtering.
  • a Mo thin film having the thickness shown in Table 1 was deposited to form a lower electrode (lower electrode layer: lower electrode body), and further patterned by photolithography. Subsequently, a silicon oxide (SiO 2) film was deposited to a thickness of 300 to 900 nm on the exposed surfaces of the lower electrode and the lower insulating layer by a low pressure CVD method using TEOS (Tera-ethoxy silane) as a raw material. Different using ICP plasma
  • the surface of the lower electrode is exposed by anisotropic dry etching, and the SiO
  • O / z m as a piezoelectric thin film was formed by reactive RF magnetron sputtering under the conditions shown in Table 3.
  • Table 3 As a result of evaluating the crystallinity of the A1N thin film by the X-ray diffraction method, only peaks corresponding to the c-plane including the (0002) plane were observed.
  • the rocking 'curve half-width (FWHM) was 1 It was 6 °.
  • the Mo thin film having the thickness shown in Table 2 is deposited on the piezoelectric thin film by DC magnetron sputtering to form the upper electrode (upper electrode layer: upper electrode main body), and photolithography is performed to obtain FIG. 4A. As shown in the figure, it was patterned in a shape close to a rectangle with a plane size of 150 X 170 m (the opposite side was slightly non-parallel). Next, the piezoelectric thin film was patterned into a predetermined shape by dry etching.
  • a photoresist is applied to the exposed surface of the sensor, piezoelectric thin film, upper electrode, upper insulating layer, and lower insulating layer, and a via hole is formed at a position corresponding to the via hole for forming the vibration space shown in FIG. 4B.
  • the vibration space 20 shown in FIG. 4B was created by removing the dies.
  • a piezoelectric thin film resonator having the structure shown in FIGS. 4A, 4B and 4C was manufactured.
  • Tables 1 to 3 show the material and thickness of each layer in the vibration region, Table 1 shows the bottom electrode rocking curve half width (FWHM), and Table 3 shows the piezoelectric thin film formation conditions and rocking curve half width (FWHM). ) And other crystalline properties.
  • Table 1 and Table 2 show the inclination angle ⁇ 1 of the end face of the side spacer 1 and the end face of the electrode body.
  • the inclination angle ⁇ 2 is shown. These are the angles between the end surface (end surface or top surface) and the bottom surface of each layer shown in FIG. 7D.
  • the impedance characteristic between the electrode terminals 15b and 17b of the piezoelectric thin-film resonator is measured using a cascade 'Microtech GSG micro prober and a network analyzer' to obtain the parameter "Scattering". From the measured values of the resonance frequency f and antiresonance frequency f, the electromechanical coupling coefficient k 2 is
  • the peak quality of the peak and antiresonance peak (peak width at a position 3 dB away from the peak top) and the acoustic quality factor Q of the resonance peak and antiresonance peak were also obtained.
  • a piezoelectric thin film resonator having the structure shown in FIGS. 4A, 4B, and 4C was fabricated as follows. That is, the material and thickness of the lower insulating layer and the upper insulating layer, the formation condition and thickness of the lower electrode, the material and inclination angle of the side spacer, the formation condition and thickness of the A1N piezoelectric thin film, and the material of the upper electrode
  • the piezoelectric thin film resonator shown in FIGS. 4A, 4B, and 4C was manufactured using the same method as in Example 1 except that the thickness was changed.
  • the impedance characteristics between the electrode terminals 15b and 17b of the piezoelectric thin film resonator are measured to obtain the 'suttering' parameter. From the measured values of the resonance frequency f and antiresonance frequency f, the electromechanical coupling coefficient k 2 is
  • the peak quality of the peak and antiresonance peak (peak width at a position 3 dB away from the peak top) and the acoustic quality factor Q of the resonance peak and antiresonance peak were also obtained.
  • Thickness vibration fundamental frequency, electromechanical coupling coefficient k 2 , acoustic quality factor Q, insertion loss minimum value (forward transmission coefficient, value at the resonance point of S) and spurious characteristics of the obtained piezoelectric thin film resonator Were as shown in Table 3.
  • a Ti thin film with a thickness of 80 nm was deposited and patterned into a desired air bridge shape by photolithography.
  • the sacrificial layer and the SiO layer are formed by reactive sputtering.
  • a lower insulating layer with the materials and thicknesses listed in Table 1 was formed on the exposed surface.
  • a Mo thin film having a thickness shown in Table 1 was deposited by DC magnetron sputtering to form a lower electrode, and further patterned by photolithography.
  • the resist was exposed to ultraviolet light that was intentionally defocused and developed to make the resist shape into a gentle saddle shape. We focused on controlling the tilt angle ⁇ 2 of the electrode pattern end face (sidewall) during dry etching by providing a gentle slope on the resist end face.
  • the rocking 'curve full width at half maximum (FWHM) was 1. It was 0 °.
  • an upper electrode is formed by depositing a Mo thin film having the thickness shown in Table 2 on the piezoelectric thin film by DC magnetron sputtering, and a planar dimension 150 X 170 as shown in FIG. 4A by photolithography. It is close to the rectangle of m and patterned in a shape (the opposite side is slightly non-parallel).
  • a side spacer was formed.
  • the piezoelectric thin film was patterned into a predetermined shape by dry etching and subsequent wet etching.
  • a thin film of the material and thickness described in Table 2 serving as the upper insulating layer was deposited and patterned.
  • a photoresist is applied on the exposed surface of the lower electrode, piezoelectric thin film, upper electrode and its side spacer, upper insulating layer, and lower insulating layer to form the vibration space shown in FIG. 4B. Dry Ettin using a mixed gas of C1 and Ar with a via hole pattern formed at a position corresponding to the via hole of
  • the Ti sacrificial layer and the SiO layer with a thickness of 1 OOOnm below it were removed by etching by circulating the etching solution through the hole.
  • the vibration space 20 shown in FIG. 4B was created by removing the strike.
  • the piezoelectric thin film resonator having the structure shown in FIGS. 4A, 4B and 4C was manufactured by the above manufacturing process.
  • Tables 1 to 3 show the material and thickness of each layer in the vibration region, Table 1 shows the bottom electrode rocking curve half width (FWHM), and Table 3 shows the piezoelectric thin film formation conditions and rocking 'curve half width (FWHM).
  • the crystal properties such as
  • the high frequency characteristics and resonance characteristics of the piezoelectric thin film resonator were evaluated by the same impedance characteristic measurement as in Example 1.
  • the resulting fundamental frequency of thickness vibration of the piezoelectric thin film resonator, the electromechanical coupling coefficient k 2, the acoustic quality factor Q, the insertion loss minimum value and spurious characteristic was as shown in 3.
  • a piezoelectric thin film resonator having the structure shown in FIGS. 7A and 7B was produced as follows.
  • a mask pattern is formed, and the SiO layer in the region corresponding to the pattern is removed by etching. It was. At the same time, the entire SiO layer on the upper surface of the Si substrate was removed by etching. Next, reactive spatter
  • the bottom layer of the materials and thicknesses listed in Table 1 are formed on the SiO layer on the top surface of the Si substrate by the tulling method.
  • the SiO film is left only around the outer peripheral side wall of the patterned lower electrode.
  • Tables 1 to 3 show the material and thickness of each layer in the vibration region, Table 1 shows the rocking curve half-width (FWHM) of the lower MoZCr laminated electrode, and Table 3 shows the A1N piezoelectric thin film formation conditions and rocking 'curve half-width. Crystal properties such as (FWHM) are described.
  • Tables 1 to 3 show the material and thickness of each layer in the vibration region, Table 1 shows the bottom electrode plugging 'curve half width (FWHM), and Table 3 shows the piezoelectric thin film formation conditions and rocking' force half width. Crystal properties such as (FWHM) are described.
  • the high frequency characteristics and resonance characteristics of the piezoelectric thin film resonator were evaluated by the same impedance characteristic measurement as in Example 1.
  • the resulting fundamental frequency of thickness vibration of the piezoelectric thin film resonator, the electromechanical coupling coefficient k 2, the acoustic quality factor Q, the insertion loss minimum value and spurious characteristic was as shown in 3.
  • a piezoelectric thin film resonator having the structure shown in FIGS. 4A, 4B, and 4C was produced as follows.
  • a low-pressure CVD SiN layer is used as the lower insulator layer, and the material and thickness of the upper and lower insulator layers, the formation conditions and materials and thickness of the lower and upper electrodes, and the formation conditions of the A1N piezoelectric thin film
  • side spacers are provided around the outer peripheral edge for both the lower electrode and the upper electrode.
  • the piezoelectric thin film resonator shown in FIGS. 4A, 4B and 4C was manufactured.
  • Tables 1 to 3 show the material and thickness of each layer in the vibration region, Table 1 shows the bottom electrode rocking curve half width (FWHM), and Table 3 shows the piezoelectric thin film formation conditions and rocking 'curve half width (FWHM). The crystal properties such as were described.
  • the high frequency characteristics and resonance characteristics of the piezoelectric thin film resonator were evaluated by the same impedance characteristic measurement as in Example 1.
  • the resulting fundamental frequency of thickness vibration of the piezoelectric thin film resonator, the electromechanical coupling coefficient k 2, the acoustic quality factor Q, the insertion loss minimum value and spurious characteristic was as shown in 3.
  • a piezoelectric thin film resonator having the structure shown in FIGS. 4A, 4B, and 4C was fabricated as follows. That is, the material and thickness of the lower insulator layer and the upper insulator layer, the formation conditions and material and thickness of the lower electrode and the upper electrode, the material and inclination angle of the side spacer, and the formation conditions of the A1N piezoelectric thin film are changed.
  • a piezoelectric thin film resonator having the structure described in FIGS. 4A, 4B, and 4C was used in the same manner as in Example 3 except that side spacers were provided around the outer peripheral edge of both the lower electrode and the upper electrode. Manufactured.
  • Tables 1 to 3 show the material and thickness of each layer in the vibration region, Table 1 shows the bottom electrode rocking curve half width (FWHM), and Table 3 shows the piezoelectric thin film formation conditions and rocking 'curve half width (FWHM).
  • the crystal properties such as
  • the high frequency characteristics and resonance characteristics of the piezoelectric thin film resonator were evaluated by the same impedance characteristic measurement as in Example 1.
  • the resulting fundamental frequency of thickness vibration of the piezoelectric thin film resonator, the electromechanical coupling coefficient k 2, the acoustic quality factor Q, the insertion loss minimum value and spurious characteristic was as shown in 3.
  • a piezoelectric thin film resonator having the structure shown in FIGS. 4A, 4B, and 4C was fabricated as follows. That is, in the same manner as in Example 3, except that both the lower electrode and the upper electrode are provided with side spacers around the outer peripheral edge to form the lower insulator layer, the lower electrode, the side spacer, and the A1N thin film. After patterning, the top electrode, side spacer, and top insulator layer are formed, as shown in Figures 4A, 4B, and 4C. A piezoelectric thin film resonator having the following structure was manufactured.
  • Tables 1 to 3 show the material and thickness of each layer in the vibration region, Table 1 shows the bottom electrode rocking curve half width (FWHM), and Table 3 shows the piezoelectric thin film formation conditions and rocking 'curve half width (FWHM). ) And other crystal properties.
  • the high frequency characteristics and the resonance characteristics of the piezoelectric thin film resonator were evaluated by the same impedance characteristic measurement as in Example 1.
  • the resulting fundamental frequency of thickness vibration of the piezoelectric thin film resonator, the electromechanical coupling coefficient k 2, the acoustic quality factor Q, the insertion loss minimum value and spurious characteristic was as shown in 3.
  • a piezoelectric thin film resonator having the structure shown in FIGS. 4A, 4B, and 4C was fabricated as follows. That is, the material and thickness of the lower insulator layer and the upper insulator layer, the material of the lower electrode, the formation conditions and thickness, the material and inclination angle of the side spacer, the formation conditions of the A1N piezoelectric thin film, and the upper electrode layer Using the same method as in Example 3 except that the material and thickness were changed and side spacers were provided around the outer periphery of both the lower electrode and the upper electrode, as shown in FIGS. 4A, 4B, and 4C. A piezoelectric thin film resonator was manufactured.
  • Tables 1 to 3 show the material and thickness of each layer in the vibration region, Table 1 shows the bottom electrode rocking 'curve half width (F WHM), and Table 3 shows the piezoelectric thin film formation conditions and rocking' curve half width (FWHM). ) Etc. were described.
  • the high frequency characteristics and resonance characteristics of the piezoelectric thin film resonator were evaluated by the same impedance characteristic measurement as in Example 1.
  • the resulting fundamental frequency of thickness vibration of the piezoelectric thin film resonator, the electromechanical coupling coefficient k 2, the acoustic quality factor Q, the insertion loss minimum value and spurious characteristic was as shown in 3.
  • a piezoelectric thin film resonator for comparison with the structure shown in FIGS. 4A, 4B, and 4C was produced as follows. That is, the lower insulator layer and the upper insulator layer are made of a low-pressure CVD SiN layer, the lower electrode adhesion layer is Cr, and the lower electrode main layer is Mo.
  • Table 3 shows the material and thickness of each layer in the vibration region, Table 1 shows the bottom electrode rocking 'curve half width (FWHM), and Table 3 shows the piezoelectric thin film formation conditions and rocking curve half width (FWHM). The properties are described.
  • the high frequency characteristics and resonance characteristics of the piezoelectric thin film resonator were evaluated by the same impedance characteristic measurement as in Example 1.
  • the resulting fundamental frequency of thickness vibration of the piezoelectric thin film resonator, the electromechanical coupling coefficient k 2, the acoustic quality factor Q, the insertion loss minimum value and spurious characteristic was as shown in 3.
  • a piezoelectric thin film resonator for comparison with the structure shown in FIGS. 4A, 4B, and 4C was produced as follows. In other words, except that the material and thickness of the lower insulator layer and the upper insulator layer and the material and thickness of the lower electrode and the upper electrode were changed, the same method as in Comparative Example 1 was applied to FIGS. 4A, 4B, and 4C.
  • a piezoelectric thin film resonator having a structure similar to that described was manufactured. Table 1 to Table 3 show the material and thickness of each layer in the vibration region, Table 1 shows the bottom electrode rocking 'curve half width (FWHM), and Table 3 shows the piezoelectric thin film formation conditions and rocking' curve half width (FWHM). Etc. were described.
  • Table 3 shows the fundamental frequency of thickness vibration, electromechanical coupling coefficient 2 , acoustic quality factor Q, minimum insertion loss (forward transmission coefficient, value at the resonance point of S) and spurious characteristics of the obtained piezoelectric thin film resonator. It was as shown in.
  • a piezoelectric thin film resonator having the structure shown in FIGS. 4A, 4B, and 4C was fabricated as follows. In other words, in addition to changing the material and thickness of the lower and upper insulator layers and the material and thickness of the lower and upper electrodes, it is formed around the lower electrode body and its outer peripheral edge.
  • a piezoelectric thin film resonator having the structure shown in FIGS. 4A, 4B, and 4C was manufactured by the method described in Example 1 except that the step at the interface with the side spacer had a large value of 30 nm.
  • Tables 1 to 3 show the material and thickness of each layer in the vibration region, Table 1 shows the bottom electrode rocking 'curve half width (FWHM), and Table 3 shows the piezoelectric thin film formation conditions and rocking' curve half width (FWHM). Etc. were described.
  • the high frequency characteristics and resonance characteristics of the piezoelectric thin film resonator were evaluated by the same impedance characteristic measurement as in Example 1.
  • the resulting fundamental frequency of thickness vibration of the piezoelectric thin film resonator, the electromechanical coupling coefficient k 2, the acoustic quality factor Q, the insertion loss minimum value and spurious characteristic was as shown in 3.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

L'invention concerne un résonateur acoustique de volume en couche mince (10) qui inclut des substrats (11, 12) présentant un espace d'oscillation (20), et une structure stratifiée piézoélectrique (14) disposée de façon à faire face à l'espace d'oscillation (20). La structure stratifiée piézoélectrique (14) est munie d'au moins une électrode inférieure (15), d'une couche mince piézoélectrique (16) et d'une électrode supérieure (17), qui sont disposées en séquence à partir du côté proche de l'espace d'oscillation (20). Une couche isolante inférieure (13) est placée au contact de la surface inférieure de l'électrode inférieure (15), et une couche isolante supérieure (23) est placée au contact de la surface inférieure de l'électrode supérieure (17). Un dispositif d'espacement latéral (26) fait de matériaux différents de ceux de l'électrode est disposé sur la circonférence extérieure de l'électrode inférieure (15) et de l'électrode supérieure (17). Un espace à l'interface entre le dispositif d'espacement latéral (26) et les électrodes (15, 17) est inférieur à 25nm. La couche mince piézoélectrique (16) est composée de nitrure d'aluminium. L'impédance acoustique du dispositif d'espacement latéral (26) est supérieure aux impédances acoustiques des électrodes (15, 17).
PCT/JP2007/057379 2006-03-31 2007-04-02 résonateur acoustique DE VOLUME en couche mince, dispositif piézoélectrique en couche mince et méthode de fabrication du dispositif piézoélectrique en couche mince WO2007119643A1 (fr)

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JP2010141570A (ja) * 2008-12-11 2010-06-24 Ube Ind Ltd 圧電薄膜音響共振器およびその製造方法
JP2010154233A (ja) * 2008-12-25 2010-07-08 Kyocera Corp 圧電共振器
JP2011236121A (ja) * 2010-04-30 2011-11-24 Commissariat A L'energie Atomique & Aux Energies Alternatives 実質的に垂直な側面を有するＡｌＮ層を得る方法
WO2013081327A1 (fr) * 2011-12-01 2013-06-06 Samsung Electronics Co., Ltd. Résonateur à onde acoustique de volume
JP2013179404A (ja) * 2012-02-28 2013-09-09 Seiko Epson Corp 超音波アレイセンサーおよび超音波アレイセンサーの製造方法
WO2014020077A1 (fr) * 2012-08-03 2014-02-06 Epcos Ag Structure topographique et procédé de fabrication de ladite structure topographique
CN107093665A (zh) * 2017-05-15 2017-08-25 中国电子科技集团公司第二十六研究所 一种压电薄膜换能器用WSiAlN薄膜及其制备方法
US10439580B2 (en) * 2017-03-24 2019-10-08 Zhuhai Crystal Resonance Technologies Co., Ltd. Method for fabricating RF resonators and filters
JP2019535148A (ja) * 2017-09-22 2019-12-05 安徽安努奇科技有限公司Ａｎｈｕｉａｎｕｋｉ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．， Ｌｔｄ． 圧電共振器の製造方法と圧電共振器
CN111554800A (zh) * 2020-04-23 2020-08-18 瑞声声学科技(深圳)有限公司 平坦化方法
WO2021109090A1 (fr) * 2019-12-05 2021-06-10 瑞声声学科技(深圳)有限公司 Procédé de fabrication d'un résonateur et résonateur
WO2022059758A1 (fr) * 2020-09-16 2022-03-24 株式会社村田製作所 Dispositif à ondes élastiques

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JP2009212620A (ja) * 2008-02-29 2009-09-17 Kyocera Corp 薄膜共振子の製造方法
JP2010141570A (ja) * 2008-12-11 2010-06-24 Ube Ind Ltd 圧電薄膜音響共振器およびその製造方法
JP2010154233A (ja) * 2008-12-25 2010-07-08 Kyocera Corp 圧電共振器
JP2011236121A (ja) * 2010-04-30 2011-11-24 Commissariat A L'energie Atomique & Aux Energies Alternatives 実質的に垂直な側面を有するＡｌＮ層を得る方法
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WO2013081327A1 (fr) * 2011-12-01 2013-06-06 Samsung Electronics Co., Ltd. Résonateur à onde acoustique de volume
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JP2013179404A (ja) * 2012-02-28 2013-09-09 Seiko Epson Corp 超音波アレイセンサーおよび超音波アレイセンサーの製造方法
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WO2014020077A1 (fr) * 2012-08-03 2014-02-06 Epcos Ag Structure topographique et procédé de fabrication de ladite structure topographique
JP2015525040A (ja) * 2012-08-03 2015-08-27 エプコス アクチエンゲゼルシャフトＥｐｃｏｓ Ａｇ トポグラフィー構造及びその製造方法
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US10439580B2 (en) * 2017-03-24 2019-10-08 Zhuhai Crystal Resonance Technologies Co., Ltd. Method for fabricating RF resonators and filters
CN107093665B (zh) * 2017-05-15 2019-07-09 中国电子科技集团公司第二十六研究所 一种压电薄膜换能器用WSiAlN薄膜及其制备方法
CN107093665A (zh) * 2017-05-15 2017-08-25 中国电子科技集团公司第二十六研究所 一种压电薄膜换能器用WSiAlN薄膜及其制备方法
JP2019535148A (ja) * 2017-09-22 2019-12-05 安徽安努奇科技有限公司Ａｎｈｕｉａｎｕｋｉ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．， Ｌｔｄ． 圧電共振器の製造方法と圧電共振器
WO2021109090A1 (fr) * 2019-12-05 2021-06-10 瑞声声学科技(深圳)有限公司 Procédé de fabrication d'un résonateur et résonateur
CN111554800A (zh) * 2020-04-23 2020-08-18 瑞声声学科技(深圳)有限公司 平坦化方法
WO2021212546A1 (fr) * 2020-04-23 2021-10-28 瑞声声学科技(深圳)有限公司 Procédé de planarisation
CN111554800B (zh) * 2020-04-23 2022-07-26 瑞声声学科技(深圳)有限公司 平坦化方法
WO2022059758A1 (fr) * 2020-09-16 2022-03-24 株式会社村田製作所 Dispositif à ondes élastiques

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