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WO2003071594A1 - Dispositif de traitement de substrats de type support - Google Patents

Dispositif de traitement de substrats de type support Download PDF

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Publication number
WO2003071594A1
WO2003071594A1 PCT/JP2002/001684 JP0201684W WO03071594A1 WO 2003071594 A1 WO2003071594 A1 WO 2003071594A1 JP 0201684 W JP0201684 W JP 0201684W WO 03071594 A1 WO03071594 A1 WO 03071594A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
downstream
mist
fluid nozzle
transport
Prior art date
Application number
PCT/JP2002/001684
Other languages
English (en)
Japanese (ja)
Inventor
Hitoshi Tauchi
Haruhiko Koizumi
Original Assignee
Sumitomo Precision Products Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Precision Products Co., Ltd filed Critical Sumitomo Precision Products Co., Ltd
Priority to JP2003570396A priority Critical patent/JPWO2003071594A1/ja
Priority to PCT/JP2002/001684 priority patent/WO2003071594A1/fr
Priority to TW092120389A priority patent/TWI227035B/zh
Publication of WO2003071594A1 publication Critical patent/WO2003071594A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement

Definitions

  • the present invention relates to a transfer type substrate processing apparatus suitably used for manufacturing a glass substrate for a liquid crystal display device.
  • the glass substrate used for the liquid crystal display device is the material of the glass substrate
  • the substrate processing equipment is roughly divided into dry type and pet type, and pet type is divided into batch type and single wafer type. Further, the single-wafer type is subdivided into a fixed-position rotating type and a transport type by mouth transport.
  • the transport type has a basic structure that supplies processing liquid to the surface of the substrate while transporting the substrate in the horizontal direction. ⁇ Used for separation processing.
  • the substrate sequentially passes through a receiving section (loader section), a liquid avoiding section, an etching section, a washing section, and a draining section.
  • the etching section the etching liquid is ejected in a dashed manner from a large number of spray nozzles arranged in a matrix above the substrate transport line, and the substrate passes through the shower, so that the entire surface of the substrate is etched. Is supplied.
  • this shower process the surface of the substrate is selectively etched except for the portion where the masking material is applied.
  • the upper and lower parts of the substrate transfer line are marked. Pure water for cleaning is spouted from a large number of spray nozzles arranged in a matrix. As the substrate passes through the shower, both surfaces of the substrate are rinsed.
  • the purpose of the water washing treatment following the etching is not only a rinsing for removing the etchant remaining on the surface of the substrate, but also a cleaning function for removing particles from the surface of the substrate.
  • brush cleaning, valve jet cleaning, megasonic cleaning, etc. may be performed as optional processing in addition to shower processing (usually during the shower processing).
  • Valve jet cleaning is a process of spraying pure water in the form of a mist onto the surface of a substrate from a nozzle array in which multiple two-fluid nozzles for mixing pure water and air are aligned in the width direction of the substrate.
  • the rows are arranged at one or two or more stages in the substrate transport direction at two upper and lower positions sandwiching the substrate transport line.
  • While brush cleaning has the effect of removing or floating relatively large particles of 5 m or more, valp jet cleaning efficiently removes or floats small to medium particles of 1 to 5 m due to the small mist diameter.
  • the megasonic cleaning is effective for removing or floating fine particles.
  • the injection amount may exceed 100 L / min for each nozzle row. Due to this large amount of air injection, the mist scatters widely upstream and downstream of the injection position, and adheres to a wide area of the substrate surface, thereby causing spots and the like. Also, by using a large amount of air, the surface of the substrate becomes easier to dry, which also causes spots and the like, and furthermore, drying the substrate surface itself is a major problem. ⁇ Yes.
  • An object of the present invention is to provide a transfer type substrate processing apparatus capable of effectively preventing generation of stains and drying of a substrate, which are problems in valve jet processing. Disclosure of the invention
  • a transport type substrate processing apparatus of the present invention transports a substrate in a horizontal direction and passes it through a plurality of processing units, and at least one of the plurality of processing units includes a bubble jet process.
  • the transport type substrate processing apparatus for performing the water washing process shield plates for preventing mist scattering are provided on the upstream side and the downstream side of the two-fluid nozzle row for performing the noble jet process, and at least one of the plurality of shield plates is provided.
  • Water supply means for supplying cleaning water to the substrate surface is provided on the downstream side of the shield plate on the most downstream side.
  • the mist is prevented from being scattered by providing the mist scattering prevention shield plates on the upstream and downstream sides of the two-fluid nozzle row.
  • the airflow becomes strong directly under the two-fluid nozzle row and drying of the substrate is promoted.
  • the force of providing a partition for isolating the valve jet processing unit from the subsequent processing unit is preferable. Further, it is preferable to make the tip of the shield plate as close as possible to the surface of the substrate or to reduce the clearance of the substrate passage hole provided in the partition wall. On the other hand, from the viewpoint of more effectively preventing drying of the substrate, it is preferable to provide a water supply means for supplying cleaning water to the surface of the substrate on the downstream side of the partition wall.
  • the clearance of the substrate passage hole provided in the partition is usually 3 to 6 mm in distance to the substrate surface.
  • this distance is preferably as small as possible, and l to 3 mm, particularly l to 2 mm is desirable.
  • this distance is limited by the flapping of the substrate being conveyed. ⁇ 3 mm, especially 1-2 mm cannot be obtained.
  • the two-fluid nozzle row for mist injection is arranged at a position sandwiching the pass line of the substrate from above and below, and the mist jet pressure from the upper two-fluid nozzle row is mistaken from the lower two-fluid nozzle row.
  • the substrate passing between the upper and lower two-fluid nozzle rows is stabilized, and the substrate is
  • the distance to the surface can be 1-3 mm, and 1-2 nm.
  • the substrate in order for the substrate to be stably transported through the bubble jet processing unit, it is necessary to arrange two fluid nozzle rows for mist ejection at two upper and lower positions across the pass line of the substrate.
  • the mist injection pressure from the upper two-fluid nozzle row is the same as the mist injection pressure from the lower two-fluid nozzle row, the substrate will not be stable.
  • a curtain nozzle that sprays cleaning water onto the surface of the substrate in the form of a continuous water film in the width direction is preferable because of its simple structure.
  • FIG. 1 is a schematic side view of a transport type substrate processing apparatus showing an embodiment of the present invention
  • FIG. 2 is a side of a bubble jet processing section which is a main part of the transport type substrate processing apparatus.
  • FIG. 3 is a view taken along the line AA in FIG. 2
  • FIG. 4 is a view taken along the line BB in FIG. .
  • the substrate processing apparatus of the present embodiment is an etching apparatus used for manufacturing a glass substrate for a liquid crystal display.
  • the substrate processing apparatus includes a receiving unit 20, a liquid avoiding unit 30, an etching unit 40, a washing unit 50, and a draining unit 60 arranged in order in the transport direction of the substrate 10. It has.
  • Each section is equipped with a number of transfer rollers 21, 31, 41, 51, 61, which support the substrate 10 horizontally and transfer it in the horizontal direction.
  • the liquid avoiding part 30 provided between the receiving part 20 and the etching part 40 is a buffer (buffer part) for preventing the etching liquid used in the etching part 40 from entering the receiving part 20. is there.
  • the etching unit 40 is provided on the upper surface of the substrate 10 so as to supply an etching solution from above in the form of a shower, and is provided at a position above the transfer line of the substrate 10.
  • the water washing section 50 is divided into a first watering section 53, a bubble jet processing section 54, and a second watering section 55 by two-stage partitions 52, 52.
  • the first sprinkling section 53 is provided with a pair of upper and lower first shower units 53 a and 53 a for spraying pure water from above and below from above and below on the upper and lower surfaces of the substrate 10. I have.
  • the bubble jet processing section 54 is provided with a pair of upper and lower two-fluid nozzle rows 56 and 56 for spraying mist from above and below on the upper and lower surfaces of the substrate 10.
  • the second watering section 55 is provided with a pair of upper and lower second shutter units 55a and 55a for spraying pure water in a shower shape from above and below on the upper and lower surfaces of the substrate 10.
  • a pair of upper and lower two-fluid nozzle rows 56 and 56 are arranged in two stages in the transport direction of the substrate 10. As shown in FIGS. 2 and 3, each two-fluid nozzle row 56 has a large number of two-fluid nozzles 56 b attached at predetermined intervals to a header 56 a in a direction perpendicular to the transport direction of the substrate 10. , 5 6 b- ⁇ . Many of the two-fluid nozzles 5 6 b, 5 6 b ⁇ ⁇ mix pure water supplied from the water supply pipe 56 c with clean air supplied from the air supply pipe 56 d to produce pure water. A mist is formed and sprayed over the entire surface of the substrate 10 in a force-like manner. On the upstream and downstream sides of all the two-fluid nozzle rows 56, a pair of shield plates 57, 5 ⁇ before and after to prevent the mist from scattering are slightly spaced between the board 10 and the board. It is installed with a gap.
  • a catching roller 59 for supporting the substrate 10 near the mist spraying unit is provided on the inner surface of the lower shield plate 57 on the downstream side.
  • a pair of upper and lower water supply means 58, 58 is provided further downstream of the shield plates 57, 57 located on the downstream side of the pair of upper and lower two-fluid nozzle rows 56, 56. You. Further, a pair of upper and lower water supply means 58, 58 is provided further upstream of the shield plates 57, 57 on the most upstream side. Similarly, a pair of upper and lower water supply means 58, 58 is provided further downstream of the partition wall 52 on the downstream side.
  • Each water supply means 58 is a curtain nozzle that sprays a water film in the form of a force that is continuous in the width direction on the upper or lower surface of the substrate 10 toward the vicinity of the tip of the shield plate 57. More specifically, as shown in FIG. 4, a header tube 58a extending in the horizontal direction perpendicular to the direction in which the substrate 10 is transported, and a watering nozzle attached at a predetermined interval in the longitudinal direction of the header tube 58a. 58b, and the sprinkling nozzle 58b blows out pure water in a fan shape in a direction perpendicular to the transport direction of the substrate 10 so that the jetted water overlaps between adjacent nozzles.
  • a pair of upper and lower slit nozzles 6 for air knives arranged so as to sandwich the transfer line of the substrate 10 from above and below are provided in the draining section 60. 2, 63 are provided.
  • the upper slit nozzle 62 removes water droplets and moisture from the cleaned upper surface of the substrate 10 by blowing air over the entire surface of the substrate 10 in a thin film shape.
  • the lower slit nozzle 63 removes water droplets and moisture from the cleaned lower surface of the substrate 10 by blowing air over the entire width of the lower surface of the substrate 10 in a thin film shape.
  • the upper and lower slit nozzles 62, 63 are inclined upstream in the transport direction of the substrate 10 in a side view, and are inclined laterally in a plan view, in order to increase the efficiency of removing water droplets and moisture.
  • the substrate 10 is sequentially passed through the receiving section 20, the liquid avoiding section 30, the etching section 40, the rinsing section 50, and the draining section 60, whereby After the upper surface is subjected to an etching process and the upper and lower surfaces are washed, a drying process is performed.
  • the substrate 10 passes through the first water sprinkling section 53, the bubble jet processing section 54 and the second water sprinkling section 55 in this order.
  • the first water sprinkling section 53 the upper surface and the lower surface of the substrate 10 are subjected to a shower process with pure water injected from the first shear units 53a, 53a.
  • a bubble jet processing unit 54 configured by arranging a pair of upper and lower two-fluid nozzle rows 56, 56 in two stages in the substrate transfer direction, the upper surface and the lower surface of the substrate 10 are subjected to jet processing using pure water mist. Receive.
  • the second shower unit 55a, 55a is again showered by pure water injected from the power.
  • the etching liquid By performing the bubble jet process in addition to the shower process, not only is the upper and lower surfaces of the substrate 10 rinsed with pure water (the etching liquid is removed), but also fine particles adhering to the upper and lower surfaces of the substrate 10 are removed. Particles emerge and some are removed.
  • the bubble jet processing section 54 In the bubble jet processing section 54, a large amount of air is ejected together with the mist from the upper and lower pair of I fluid nozzle rows 56 and 56, and collides with the surface of the substrate 10.
  • the upper and lower pairs of two-fluid nozzle rows 56, 56 are provided with a pair of upper and lower shield plates 57, 57, respectively.
  • the mist spray is isolated.
  • the bubble jet processing section 54 itself is separated from the front and rear watering sections 53, 55 by partition walls 52, 52. For this reason, the mist is effectively prevented from scattering, especially toward the downstream side, which causes stains.
  • the substrate 10 is supported by the auxiliary roller 59 on the downstream side of the mist jetting section.
  • the mist injection pressure from the upper two-fluid nozzle row 56 is set higher than the mist injection pressure from the lower two-fluid nozzle row 56.
  • the substrate 10 moving in the mist ejecting section is pressed against the auxiliary roller 59 by the difference in the mist ejecting pressure, and becomes very stable.
  • the distance from the tip of the shield plate 57 to the surface of the substrate 10 can be 1 to 3 mm, and can be 1 to 2 mm.
  • the clearance of the substrate passage hole provided in the partition wall 52 is 3 to 6 mm as a distance to the surface of the substrate 10.
  • the auxiliary roller 59 has a sufficiently smaller diameter than the transport roller 51 so as to approach the mist ejecting section. Specifically, when the diameter of the transfer port is 45 mm, the diameter of the auxiliary port is preferably about 15 mm.
  • a set of water supply means 58, 58 is provided, and pure water is supplied to the upper and lower surfaces of the substrate 10. For this reason, drying of the substrate 10 which becomes a problem together with generation of stains in the bubble jet process is also prevented.
  • the disposition position of the water supply means 58 from the viewpoint of preventing the substrate 10 from drying, when the upper and lower pair of two-fluid nozzle rows 56, 56 are one stage in the substrate transport direction, at least the upper and lower It is necessary to provide a pair of water supply means 58, 58 Yes, if the upper and lower pair of two-fluid nozzle rows 56, 56 have two or more stages in the substrate transport direction, at least the upper and lower pair of two-fluid nozzle rows 56, 56 will be located downstream of the most downstream two-fluid nozzle row 56, 56. Water supply means 58, 58 must be provided.
  • the partitions 52, 52 need only be at least on the downstream side of the bubble jet processing unit 54, and the partitions 52 on the upstream side can be omitted.
  • the bubble jet process is adopted as an optional process in the water washing section 50.
  • one or more of a brush cleaning process, a megasonic cleaning process, and a high-pressure water sprinkling process can be adopted.
  • the brush cleaning process is performed on the upstream side of the bubble jet process, and the megasonic cleaning process is performed on the downstream side of the bubble jet process.
  • High pressure watering is often performed between bubble jet treatment and megasonic cleaning.
  • the first watering treatment, brush cleaning, bubble jet treatment, megasonic cleaning, and second watering treatment are performed in this order, and megasonic cleaning is performed.
  • a process subsequent to the bubble jet process When the high-pressure watering treatment is adopted, this is the treatment subsequent to the bubble jet treatment.
  • partitions are required downstream and upstream of the processing unit.
  • the transport roller is advanced by supporting at least two sides of the substrate 10 from below, but some of the transport rollers are pinch rollers that pinch both edges of the substrate 10 from above (see Figs. By combining 5) in 4), the substrate 10 can be transported reliably.
  • the transport type substrate processing apparatus of the present invention transports a substrate in a horizontal direction and passes the substrate through a plurality of processing units, and at least one of the plurality of processing units.
  • a transport type substrate processing apparatus that performs a water washing process including a bubble jet process
  • shield plates for preventing mist scattering are provided upstream and downstream of the two-fluid nozzle row for performing the bubble jet process.
  • a water supply means for supplying cleaning water to the substrate surface is provided at least downstream of the shield plate at the most downstream side of the plurality of shielded plates, so that the occurrence of stains and the problem of the substrate caused by the valpe jet processing are reduced. This has the effect of effectively preventing both of the drying.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

Dispositif de traitement de substrats de type support qui effectue la gravure, etc., en faisant passer un substrat (10) dans une partie de traitement par liquides (40), une partie de lavage (50), etc., dans l'ordre indiqué. Le dispositif de l'invention vise à empêcher l'apparition de tâches dans une partie de traitement à jet de bulles (54) intégrée à la partie de lavage (50) ainsi que le séchage du substrat (10). Pour obtenir un tel résultat, des plaques anti-pulvérisation de brouillard sont montées en amont et en aval des rangées de buses pour deux liquides (56), utilisées pour le traitement à jet de bulles. Des moyens d'alimentation en eau (58) pour amener l'eau de nettoyage à la surface du substrat sont installés en aval d'au moins une plaque, disposée dans la zone la plus en aval. Des parois de séparation (52) sont installées pour isoler la partie de traitement à jet de bulles (54) de la partie de traitement suivante (55). Des moyens d'amenée d'eau (58), destinés à amener l'eau à la surface du substrat (10), sont disposés en aval des parois de séparation (52).
PCT/JP2002/001684 2002-02-25 2002-02-25 Dispositif de traitement de substrats de type support WO2003071594A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003570396A JPWO2003071594A1 (ja) 2002-02-25 2002-02-25 搬送式基板処理装置
PCT/JP2002/001684 WO2003071594A1 (fr) 2002-02-25 2002-02-25 Dispositif de traitement de substrats de type support
TW092120389A TWI227035B (en) 2002-02-25 2003-07-25 Substrate processing device of transporting type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2002/001684 WO2003071594A1 (fr) 2002-02-25 2002-02-25 Dispositif de traitement de substrats de type support

Publications (1)

Publication Number Publication Date
WO2003071594A1 true WO2003071594A1 (fr) 2003-08-28

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Application Number Title Priority Date Filing Date
PCT/JP2002/001684 WO2003071594A1 (fr) 2002-02-25 2002-02-25 Dispositif de traitement de substrats de type support

Country Status (3)

Country Link
JP (1) JPWO2003071594A1 (fr)
TW (1) TWI227035B (fr)
WO (1) WO2003071594A1 (fr)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005053006A1 (fr) * 2003-11-25 2005-06-09 Sumitomo Precision Products Co., Ltd. Appareil de traitement de substrat a systeme transporteur
JP2006093591A (ja) * 2004-09-27 2006-04-06 Shibaura Mechatronics Corp 基板の処理装置
JP2006150585A (ja) * 2004-11-02 2006-06-15 Showa Denko Kk 液体ホーニング加工機及び液体ホーニング加工方法
KR100691479B1 (ko) 2005-12-20 2007-03-12 주식회사 케이씨텍 대면적 기판의 식각장치
WO2008087903A1 (fr) * 2007-01-15 2008-07-24 Shibaura Mechatronics Corporation Appareil et procédé de traitement de substrat
JP2009059777A (ja) * 2007-08-30 2009-03-19 Hitachi Chem Co Ltd 粗化処理装置
JP2012126582A (ja) * 2010-12-13 2012-07-05 Asahi Glass Co Ltd ディスプレイ装置用カバーガラスの製造方法
CN102834902A (zh) * 2010-03-31 2012-12-19 积水化学工业株式会社 蚀刻方法及装置
JP2013026490A (ja) * 2011-07-22 2013-02-04 Tokyo Electron Ltd 基板処理装置
JP2015196153A (ja) * 2014-04-02 2015-11-09 株式会社中西製作所 ノズル管ユニットとこれを用いた洗浄装置
CN106971966A (zh) * 2017-04-06 2017-07-21 安徽熙泰智能科技有限公司 一种半导体芯片清洗装置
KR20220036407A (ko) * 2020-09-14 2022-03-23 주식회사 티케이씨 얼룩현상을 개선한 기판의 수직처리시스템
CN114682548A (zh) * 2020-12-28 2022-07-01 芝浦机械电子装置股份有限公司 基板处理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10156229A (ja) * 1996-12-02 1998-06-16 Mitsubishi Electric Corp 洗浄用２流体ジェットノズル及び洗浄装置
JP2000193961A (ja) * 1995-06-01 2000-07-14 Semiconductor Energy Lab Co Ltd アクティブマトリクス型表示装置
JP2000323813A (ja) * 1999-05-12 2000-11-24 Dainippon Screen Mfg Co Ltd 基板処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000193961A (ja) * 1995-06-01 2000-07-14 Semiconductor Energy Lab Co Ltd アクティブマトリクス型表示装置
JPH10156229A (ja) * 1996-12-02 1998-06-16 Mitsubishi Electric Corp 洗浄用２流体ジェットノズル及び洗浄装置
JP2000323813A (ja) * 1999-05-12 2000-11-24 Dainippon Screen Mfg Co Ltd 基板処理装置

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005053006A1 (fr) * 2003-11-25 2005-06-09 Sumitomo Precision Products Co., Ltd. Appareil de traitement de substrat a systeme transporteur
JP2006093591A (ja) * 2004-09-27 2006-04-06 Shibaura Mechatronics Corp 基板の処理装置
JP2006150585A (ja) * 2004-11-02 2006-06-15 Showa Denko Kk 液体ホーニング加工機及び液体ホーニング加工方法
KR100691479B1 (ko) 2005-12-20 2007-03-12 주식회사 케이씨텍 대면적 기판의 식각장치
WO2008087903A1 (fr) * 2007-01-15 2008-07-24 Shibaura Mechatronics Corporation Appareil et procédé de traitement de substrat
JP2009059777A (ja) * 2007-08-30 2009-03-19 Hitachi Chem Co Ltd 粗化処理装置
CN102834902A (zh) * 2010-03-31 2012-12-19 积水化学工业株式会社 蚀刻方法及装置
JP2012126582A (ja) * 2010-12-13 2012-07-05 Asahi Glass Co Ltd ディスプレイ装置用カバーガラスの製造方法
JP2013026490A (ja) * 2011-07-22 2013-02-04 Tokyo Electron Ltd 基板処理装置
JP2015196153A (ja) * 2014-04-02 2015-11-09 株式会社中西製作所 ノズル管ユニットとこれを用いた洗浄装置
CN106971966A (zh) * 2017-04-06 2017-07-21 安徽熙泰智能科技有限公司 一种半导体芯片清洗装置
KR20220036407A (ko) * 2020-09-14 2022-03-23 주식회사 티케이씨 얼룩현상을 개선한 기판의 수직처리시스템
KR102410120B1 (ko) * 2020-09-14 2022-06-21 주식회사 티케이씨 얼룩현상을 개선한 기판의 수직처리시스템
CN114682548A (zh) * 2020-12-28 2022-07-01 芝浦机械电子装置股份有限公司 基板处理装置

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