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WO2003067668A3 - Speicherzelle - Google Patents

Speicherzelle Download PDF

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Publication number
WO2003067668A3
WO2003067668A3 PCT/DE2003/000135 DE0300135W WO03067668A3 WO 2003067668 A3 WO2003067668 A3 WO 2003067668A3 DE 0300135 W DE0300135 W DE 0300135W WO 03067668 A3 WO03067668 A3 WO 03067668A3
Authority
WO
WIPO (PCT)
Prior art keywords
trench
memory cell
sequence
side walls
area
Prior art date
Application number
PCT/DE2003/000135
Other languages
English (en)
French (fr)
Other versions
WO2003067668A2 (de
Inventor
Joachim Deppe
Christoph Kleint
Christoph Ludwig
Original Assignee
Infineon Technologies Ag
Joachim Deppe
Christoph Kleint
Christoph Ludwig
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Joachim Deppe, Christoph Kleint, Christoph Ludwig filed Critical Infineon Technologies Ag
Priority to JP2003566907A priority Critical patent/JP4081016B2/ja
Priority to EP03702339A priority patent/EP1472742A2/de
Publication of WO2003067668A2 publication Critical patent/WO2003067668A2/de
Publication of WO2003067668A3 publication Critical patent/WO2003067668A3/de
Priority to US10/913,707 priority patent/US7274069B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)

Abstract

Bei der Speicherzelle ist in dem Graben eine Schichtfolge aus einer ersten Oxidschicht (1), einer Nitridschicht (2) und einer der Gate-Elektrode zugewandten zweiten Oxidschicht (3) an den seitlichen Grabenwänden vorhanden, während die Nitridschicht (2) in einem gekrümmten Bereich (4) des Grabenbodens fehlt. Bei einer alternativen Ausgestaltung ist an den seitlichen Wänden des Grabens je mindestens eine Stufe ausgebildet, vorzugsweise unterhalb des Source-Bereiches bzw. des Drain-Bereiches.
PCT/DE2003/000135 2002-02-06 2003-01-17 Speicherzelle WO2003067668A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003566907A JP4081016B2 (ja) 2002-02-06 2003-01-17 メモリセル
EP03702339A EP1472742A2 (de) 2002-02-06 2003-01-17 Speicherzelle
US10/913,707 US7274069B2 (en) 2002-02-06 2004-08-05 Memory cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10204868A DE10204868B4 (de) 2002-02-06 2002-02-06 Speicherzelle mit Grabenspeichertransistor und Oxid-Nitrid-Oxid-Dielektrikum
DE10204868.1 2002-02-06

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/913,707 Continuation US7274069B2 (en) 2002-02-06 2004-08-05 Memory cell

Publications (2)

Publication Number Publication Date
WO2003067668A2 WO2003067668A2 (de) 2003-08-14
WO2003067668A3 true WO2003067668A3 (de) 2003-12-11

Family

ID=27618353

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/000135 WO2003067668A2 (de) 2002-02-06 2003-01-17 Speicherzelle

Country Status (7)

Country Link
US (1) US7274069B2 (de)
EP (1) EP1472742A2 (de)
JP (1) JP4081016B2 (de)
CN (1) CN100416860C (de)
DE (1) DE10204868B4 (de)
TW (1) TW200304221A (de)
WO (1) WO2003067668A2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4334315B2 (ja) * 2003-10-10 2009-09-30 株式会社ルネサステクノロジ 半導体記憶装置の製造方法
KR100546391B1 (ko) * 2003-10-30 2006-01-26 삼성전자주식회사 소노스 소자 및 그 제조 방법
KR100598106B1 (ko) * 2004-08-27 2006-07-07 삼성전자주식회사 소노스 기억 셀 및 그 형성 방법
US7358164B2 (en) * 2005-06-16 2008-04-15 International Business Machines Corporation Crystal imprinting methods for fabricating substrates with thin active silicon layers
US7399686B2 (en) * 2005-09-01 2008-07-15 International Business Machines Corporation Method and apparatus for making coplanar dielectrically-isolated regions of different semiconductor materials on a substrate
US8344446B2 (en) * 2006-12-15 2013-01-01 Nec Corporation Nonvolatile storage device and method for manufacturing the same in which insulating film is located between first and second impurity diffusion regions but absent on first impurity diffusion region
JP2008166528A (ja) 2006-12-28 2008-07-17 Spansion Llc 半導体装置およびその製造方法
JP2008192803A (ja) 2007-02-05 2008-08-21 Spansion Llc 半導体装置およびその製造方法
JP2008227403A (ja) * 2007-03-15 2008-09-25 Spansion Llc 半導体装置およびその製造方法
US7750406B2 (en) * 2007-04-20 2010-07-06 International Business Machines Corporation Design structure incorporating a hybrid substrate
US7651902B2 (en) * 2007-04-20 2010-01-26 International Business Machines Corporation Hybrid substrates and methods for forming such hybrid substrates
JP2008305942A (ja) * 2007-06-07 2008-12-18 Tokyo Electron Ltd 半導体メモリ装置およびその製造方法
JP2009004510A (ja) * 2007-06-20 2009-01-08 Toshiba Corp 不揮発性半導体記憶装置
JP5405737B2 (ja) 2007-12-20 2014-02-05 スパンション エルエルシー 半導体装置およびその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4830975A (en) * 1983-01-13 1989-05-16 National Semiconductor Corporation Method of manufacture a primos device
US6191459B1 (en) * 1996-01-08 2001-02-20 Infineon Technologies Ag Electrically programmable memory cell array, using charge carrier traps and insulation trenches
US20010008291A1 (en) * 2000-01-14 2001-07-19 Takaaki Aoki Semiconductor device and method for manufacturing the same
US20020024092A1 (en) * 2000-08-11 2002-02-28 Herbert Palm Memory cell, memory cell arrangement and fabrication method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252845A (en) * 1990-04-02 1993-10-12 Electronics And Telecommunications Research Institute Trench DRAM cell with vertical transistor
JP2662076B2 (ja) * 1990-05-02 1997-10-08 松下電子工業株式会社 不揮発性半導体記憶装置およびその製造方法
US5424231A (en) * 1994-08-09 1995-06-13 United Microelectronics Corp. Method for manufacturing a VDMOS transistor
US6309924B1 (en) * 2000-06-02 2001-10-30 International Business Machines Corporation Method of forming self-limiting polysilicon LOCOS for DRAM cell
BR0113164A (pt) * 2000-08-11 2003-06-24 Infineon Technologies Ag Célula de memória, disposição de células de memória e processo de produção
DE10041749A1 (de) * 2000-08-27 2002-03-14 Infineon Technologies Ag Vertikale nichtflüchtige Halbleiter-Speicherzelle sowie Verfahren zu deren Herstellung
EP1397588B1 (de) * 2001-06-21 2006-01-04 ALSTOM Technology Ltd Verfahren zum betrieb einer kraftmaschine
US6846738B2 (en) * 2002-03-13 2005-01-25 Micron Technology, Inc. High permeability composite films to reduce noise in high speed interconnects
US6900116B2 (en) * 2002-03-13 2005-05-31 Micron Technology Inc. High permeability thin films and patterned thin films to reduce noise in high speed interconnections
US7235457B2 (en) * 2002-03-13 2007-06-26 Micron Technology, Inc. High permeability layered films to reduce noise in high speed interconnects
US6970053B2 (en) * 2003-05-22 2005-11-29 Micron Technology, Inc. Atomic layer deposition (ALD) high permeability layered magnetic films to reduce noise in high speed interconnection

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4830975A (en) * 1983-01-13 1989-05-16 National Semiconductor Corporation Method of manufacture a primos device
US6191459B1 (en) * 1996-01-08 2001-02-20 Infineon Technologies Ag Electrically programmable memory cell array, using charge carrier traps and insulation trenches
US20010008291A1 (en) * 2000-01-14 2001-07-19 Takaaki Aoki Semiconductor device and method for manufacturing the same
US20020024092A1 (en) * 2000-08-11 2002-02-28 Herbert Palm Memory cell, memory cell arrangement and fabrication method

Also Published As

Publication number Publication date
CN100416860C (zh) 2008-09-03
US20050030780A1 (en) 2005-02-10
US7274069B2 (en) 2007-09-25
DE10204868B4 (de) 2007-08-23
WO2003067668A2 (de) 2003-08-14
DE10204868A1 (de) 2003-08-21
JP4081016B2 (ja) 2008-04-23
TW200304221A (en) 2003-09-16
EP1472742A2 (de) 2004-11-03
JP2005517301A (ja) 2005-06-09
CN1698211A (zh) 2005-11-16

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