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WO2003046947A3 - Bipolar transistor - Google Patents

Bipolar transistor Download PDF

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Publication number
WO2003046947A3
WO2003046947A3 PCT/EP2002/013620 EP0213620W WO03046947A3 WO 2003046947 A3 WO2003046947 A3 WO 2003046947A3 EP 0213620 W EP0213620 W EP 0213620W WO 03046947 A3 WO03046947 A3 WO 03046947A3
Authority
WO
WIPO (PCT)
Prior art keywords
bipolar transistor
base
transmitter
partially
distribution
Prior art date
Application number
PCT/EP2002/013620
Other languages
English (en)
French (fr)
Other versions
WO2003046947A2 (de
Inventor
Bernd Heinemann
Dieter Knoll
Karl-Ernst Ehwald
Holger Ruecker
Dietmar Krueger
Bernd Tillack
Hans-Joerg Osten
Wolfgang Mehr
Wolfgang Winkler
Abbas Ourmazd
Original Assignee
Ihp Gmbh
Bernd Heinemann
Dieter Knoll
Karl-Ernst Ehwald
Holger Ruecker
Dietmar Krueger
Bernd Tillack
Hans-Joerg Osten
Wolfgang Mehr
Wolfgang Winkler
Abbas Ourmazd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ihp Gmbh, Bernd Heinemann, Dieter Knoll, Karl-Ernst Ehwald, Holger Ruecker, Dietmar Krueger, Bernd Tillack, Hans-Joerg Osten, Wolfgang Mehr, Wolfgang Winkler, Abbas Ourmazd filed Critical Ihp Gmbh
Publication of WO2003046947A2 publication Critical patent/WO2003046947A2/de
Publication of WO2003046947A3 publication Critical patent/WO2003046947A3/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/861—Vertical heterojunction BJTs having an emitter region comprising one or more non-monocrystalline elements of Group IV, e.g. amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors

Landscapes

  • Bipolar Transistors (AREA)

Abstract

Gemäß Anspruch 1 umfasst der erfindungsgemäße Bipolartransistor 1 einen Emitter 20, der teilweise einkristallin und teilweise polykristallin oder amorph ausgebildet ist (partiell einkristalliner Emitter). Außerdem weist die Basis 30b des Bipolartransistors 1 eine Kohlenstoff- oder Sauerstoffkonzentration im Bereich von 2x1019 bis 2x1021 cm-3. Eine solche Struktur webessert die Hochfrequenzeigenschaften des Bipolartransistors und vermindert das Hochfrequenz-Rauschen. In einer Ausgestaltung der Erfindung liegt in der Basis 30b des Bipolartransistors eine Dotierstoffvereilung, vorzugsweise eine Borverteilung, mit einer Flächendosis von mindestens 4,5x1013 cm-2, vorzugsweise mindestens 7,5x1013 cm-2 vor. Die Basis kann darüber hinaus auch Germanium enthalten.
PCT/EP2002/013620 2001-11-30 2002-12-02 Bipolar transistor WO2003046947A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2001160511 DE10160511A1 (de) 2001-11-30 2001-11-30 Bipolarer Transistor
DE10160511.0 2001-11-30

Publications (2)

Publication Number Publication Date
WO2003046947A2 WO2003046947A2 (de) 2003-06-05
WO2003046947A3 true WO2003046947A3 (de) 2003-10-30

Family

ID=7708613

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/013620 WO2003046947A2 (de) 2001-11-30 2002-12-02 Bipolar transistor

Country Status (2)

Country Link
DE (1) DE10160511A1 (de)
WO (1) WO2003046947A2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9414921B2 (en) 2009-10-29 2016-08-16 Valtech Cardio, Ltd. Tissue anchor for annuloplasty device

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10231407B4 (de) * 2002-07-11 2007-01-11 Infineon Technologies Ag Bipolartransistor
DE10316531A1 (de) * 2003-04-10 2004-07-08 Infineon Technologies Ag Bipolar-Transistor
DE10317098A1 (de) 2003-04-14 2004-07-22 Infineon Technologies Ag Verfahren zur Herstellung eines Bipolartransistors
DE10341806B4 (de) 2003-09-10 2008-11-06 Texas Instruments Deutschland Gmbh Verfahren zur Herstellung einer epitaktischen Silizium-Germanium Basisschicht eines heterobipolaren pnp Transistors
DE10351100B4 (de) * 2003-10-31 2007-02-08 Texas Instruments Deutschland Gmbh Verfahren zur Herstellung eines vertikalen PNP-Transistors aus einem Halbleiterwerkstoff und vertikaler bipolarer PNP-Transitor
DE102004001239A1 (de) * 2004-01-07 2005-08-04 Infineon Technologies Ag Selbstjustierte, epitaktische Emitterstruktur für einen Bipolartransistor und Verfahren zur Herstellung derselben
DE102005047221B4 (de) * 2005-10-01 2015-08-06 APSOL GmbH Halbleiterschichtstruktur, Bauelement mit einer solchen Halbleiterschichtstruktur, Halbleiterschichtstruktur-Scheiben und Verfahren zu deren Herstellung
US8715342B2 (en) 2009-05-07 2014-05-06 Valtech Cardio, Ltd. Annuloplasty ring with intra-ring anchoring
EP2911593B1 (de) 2012-10-23 2020-03-25 Valtech Cardio, Ltd. Perkutane gewebeankertechniken

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272096A (en) * 1992-09-29 1993-12-21 Motorola, Inc. Method for making a bipolar transistor having a silicon carbide layer
US5897359A (en) * 1996-12-09 1999-04-27 Electronics And Telecommunications Research Institute Method of manufacturing a silicon/silicon germanium heterojunction bipolar transistor
US6169007B1 (en) * 1999-06-25 2001-01-02 Applied Micro Circuits Corporation Self-aligned non-selective thin-epi-base silicon germanium (SiGe) heterojunction bipolar transistor BicMOS process using silicon dioxide etchback
JP2001332563A (ja) * 2000-05-23 2001-11-30 Matsushita Electric Ind Co Ltd バイポーラトランジスタ及びその製造方法

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
JPH05144834A (ja) * 1991-03-20 1993-06-11 Hitachi Ltd バイポーラトランジスタ及びその製造方法
JP2551353B2 (ja) * 1993-10-07 1996-11-06 日本電気株式会社 半導体装置及びその製造方法
JPH07169771A (ja) * 1993-12-15 1995-07-04 Nec Corp 半導体装置及びその製造方法
DE4417916A1 (de) * 1994-05-24 1995-11-30 Telefunken Microelectron Verfahren zur Herstellung eines Bipolartransistors
US5581115A (en) * 1994-10-07 1996-12-03 National Semiconductor Corporation Bipolar transistors using isolated selective doping to improve performance characteristics
JP2748898B2 (ja) * 1995-08-31 1998-05-13 日本電気株式会社 半導体装置およびその製造方法
DE19609933A1 (de) * 1996-03-14 1997-09-18 Daimler Benz Ag Verfahren zur Herstellung eines Heterobipolartransistors
DE19755979A1 (de) * 1996-12-09 1999-06-10 Inst Halbleiterphysik Gmbh Silizium-Germanium-Heterobipolartransistor
JP3186691B2 (ja) * 1998-04-07 2001-07-11 日本電気株式会社 半導体装置及びその形成方法
DE19845787A1 (de) * 1998-09-21 2000-03-23 Inst Halbleiterphysik Gmbh Bipolartransistor und Verfahren zu seiner Herstellung
DE19845789A1 (de) * 1998-09-21 2000-03-23 Inst Halbleiterphysik Gmbh Bipolartransistor und Verfahren zu seiner Herstellung
DE19845793A1 (de) * 1998-09-21 2000-03-23 Inst Halbleiterphysik Gmbh Bipolartransistor und Verfahren zu seiner Herstellung
JP3346348B2 (ja) * 1999-08-19 2002-11-18 日本電気株式会社 半導体装置の製造方法
DE19940278A1 (de) * 1999-08-26 2001-03-08 Inst Halbleiterphysik Gmbh Schichtstruktur für bipolare Transistoren und Verfahren zu deren Herstellung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272096A (en) * 1992-09-29 1993-12-21 Motorola, Inc. Method for making a bipolar transistor having a silicon carbide layer
US5897359A (en) * 1996-12-09 1999-04-27 Electronics And Telecommunications Research Institute Method of manufacturing a silicon/silicon germanium heterojunction bipolar transistor
US6169007B1 (en) * 1999-06-25 2001-01-02 Applied Micro Circuits Corporation Self-aligned non-selective thin-epi-base silicon germanium (SiGe) heterojunction bipolar transistor BicMOS process using silicon dioxide etchback
JP2001332563A (ja) * 2000-05-23 2001-11-30 Matsushita Electric Ind Co Ltd バイポーラトランジスタ及びその製造方法
EP1263052A2 (de) * 2000-05-23 2002-12-04 Matsushita Electric Industrial Co., Ltd. Bipolarer transistor und herstellungsmethode

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 2002, no. 03 3 April 2002 (2002-04-03) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9414921B2 (en) 2009-10-29 2016-08-16 Valtech Cardio, Ltd. Tissue anchor for annuloplasty device

Also Published As

Publication number Publication date
WO2003046947A2 (de) 2003-06-05
DE10160511A1 (de) 2003-06-12

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