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WO2002101895A3 - High power, high brightness wide area laser device - Google Patents

High power, high brightness wide area laser device Download PDF

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Publication number
WO2002101895A3
WO2002101895A3 PCT/IB2002/001894 IB0201894W WO02101895A3 WO 2002101895 A3 WO2002101895 A3 WO 2002101895A3 IB 0201894 W IB0201894 W IB 0201894W WO 02101895 A3 WO02101895 A3 WO 02101895A3
Authority
WO
WIPO (PCT)
Prior art keywords
wide area
laser device
high power
area laser
high brightness
Prior art date
Application number
PCT/IB2002/001894
Other languages
French (fr)
Other versions
WO2002101895A2 (en
Inventor
Vladimir Alexandrovit Sychugov
Original Assignee
Parriaux Olivier
Vladimir Alexandrovit Sychugov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Parriaux Olivier, Vladimir Alexandrovit Sychugov filed Critical Parriaux Olivier
Publication of WO2002101895A2 publication Critical patent/WO2002101895A2/en
Publication of WO2002101895A3 publication Critical patent/WO2002101895A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/143—Littman-Metcalf configuration, e.g. laser - grating - mirror
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)

Abstract

High power, high brightness laser comprising a periodically segmented wide active stripe (2), a high reflectivity rear mirror (1), a wavelength selective mirror (6) making an angle υ with the optical axis z so as to reflect into the active stripe the wave satisfying the Bragg condition in the autocollimation regime on the periodically segmented wide laser stripe for the minus first diffraction order.
PCT/IB2002/001894 2001-06-04 2002-05-28 High power, high brightness wide area laser device WO2002101895A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2001114820 2001-06-04
RU2001114820/28A RU2197772C1 (en) 2001-06-04 2001-06-04 Semiconductor laser with wide periodically sectionalized stripe contact

Publications (2)

Publication Number Publication Date
WO2002101895A2 WO2002101895A2 (en) 2002-12-19
WO2002101895A3 true WO2002101895A3 (en) 2003-10-23

Family

ID=20250233

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2002/001894 WO2002101895A2 (en) 2001-06-04 2002-05-28 High power, high brightness wide area laser device

Country Status (2)

Country Link
RU (1) RU2197772C1 (en)
WO (1) WO2002101895A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1604229A4 (en) * 2003-03-14 2007-04-18 Pbc Lasers Ltd Apparatus for generating improved laser beam
ATE400911T1 (en) 2004-06-16 2008-07-15 Univ Danmarks Tekniske SEGMENTED DIODE LASER SYSTEM
EP1961086B1 (en) 2005-12-16 2009-07-01 Danmarks Tekniske Universitet Laser system with segmented diode laser
TW201111834A (en) * 2009-08-31 2011-04-01 Epicrystals Oy Stabilized light source
DE102010003227A1 (en) 2010-03-24 2011-09-29 Universität Stuttgart Institut für Strahlwerkzeuge laser system
CN102324696B (en) * 2011-09-15 2012-11-07 中国科学院长春光学精密机械与物理研究所 Bragg refractive waveguide edge transmitting semiconductor laser with low horizontal divergence angle
WO2015124216A1 (en) * 2014-02-24 2015-08-27 Universität Stuttgart Institut für Strahlwerkzeuge Grating mirror
WO2018233799A1 (en) * 2017-06-21 2018-12-27 Universität Stuttgart Passive compensation of convection-induced misalignment in optical resonators

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5337328A (en) * 1992-05-08 1994-08-09 Sdl, Inc. Semiconductor laser with broad-area intra-cavity angled grating
US5651018A (en) * 1993-01-07 1997-07-22 Sdl, Inc. Wavelength-stabilized, high power semiconductor laser
US6122299A (en) * 1997-12-31 2000-09-19 Sdl, Inc. Angled distributed reflector optical device with enhanced light confinement
WO2000072409A2 (en) * 1999-05-10 2000-11-30 Sarnoff Corporation Wide stripe distributed bragg reflector lasers with improved angular and spectral characteristics
US6212216B1 (en) * 1996-12-17 2001-04-03 Ramadas M. R. Pillai External cavity micro laser apparatus
US6219478B1 (en) * 1998-01-23 2001-04-17 Olivier M. Parriaux Light wave diffraction device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5337328A (en) * 1992-05-08 1994-08-09 Sdl, Inc. Semiconductor laser with broad-area intra-cavity angled grating
US5651018A (en) * 1993-01-07 1997-07-22 Sdl, Inc. Wavelength-stabilized, high power semiconductor laser
US6212216B1 (en) * 1996-12-17 2001-04-03 Ramadas M. R. Pillai External cavity micro laser apparatus
US6122299A (en) * 1997-12-31 2000-09-19 Sdl, Inc. Angled distributed reflector optical device with enhanced light confinement
US6219478B1 (en) * 1998-01-23 2001-04-17 Olivier M. Parriaux Light wave diffraction device
WO2000072409A2 (en) * 1999-05-10 2000-11-30 Sarnoff Corporation Wide stripe distributed bragg reflector lasers with improved angular and spectral characteristics

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
LEGER J R ET AL: "COHERENT BEAM ADDITION OF GAAIAS LASERS BY BINARY PHASE GRATINGS", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 48, no. 14, 7 April 1986 (1986-04-07), pages 888 - 890, XP000706788, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
RU2197772C1 (en) 2003-01-27
WO2002101895A2 (en) 2002-12-19

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