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WO2002073660A3 - System and method to control radial delta temperature - Google Patents

System and method to control radial delta temperature Download PDF

Info

Publication number
WO2002073660A3
WO2002073660A3 PCT/US2002/007034 US0207034W WO02073660A3 WO 2002073660 A3 WO2002073660 A3 WO 2002073660A3 US 0207034 W US0207034 W US 0207034W WO 02073660 A3 WO02073660 A3 WO 02073660A3
Authority
WO
WIPO (PCT)
Prior art keywords
ramp rate
delta temperature
radial delta
control radial
variable
Prior art date
Application number
PCT/US2002/007034
Other languages
French (fr)
Other versions
WO2002073660A2 (en
Inventor
Cole Porter
Alan Starner
Original Assignee
Asml Us Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/068,127 external-priority patent/US6901317B2/en
Application filed by Asml Us Inc filed Critical Asml Us Inc
Priority to EP02707964A priority Critical patent/EP1328966A4/en
Priority to JP2002572612A priority patent/JP2004519855A/en
Priority to AU2002242327A priority patent/AU2002242327A1/en
Priority to KR1020027014904A priority patent/KR20020094016A/en
Publication of WO2002073660A2 publication Critical patent/WO2002073660A2/en
Publication of WO2002073660A3 publication Critical patent/WO2002073660A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D21/00—Arrangements of monitoring devices; Arrangements of safety devices
    • F27D21/0014—Devices for monitoring temperature
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F27D2019/0003—Monitoring the temperature or a characteristic of the charge and using it as a controlling value

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Control Of Temperature (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A system and method of minimizing stress related to the ramp rate of variable by limiting the ramp rate as a function of the current value of the variable is provided (10, 14, 14, 22, 26). More specifically, the present invention provides a system and method of maintaining the radial delta temperature of a semiconductor substrate or other heated body below the crystal slip curve by dynamically controlling the temperature ramp rate during processing.
PCT/US2002/007034 2001-03-08 2002-03-08 System and method to control radial delta temperature WO2002073660A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP02707964A EP1328966A4 (en) 2001-03-08 2002-03-08 System and method to control radial delta temperature
JP2002572612A JP2004519855A (en) 2001-03-08 2002-03-08 System and method for controlling radiant delta temperature
AU2002242327A AU2002242327A1 (en) 2001-03-08 2002-03-08 System and method to control radial delta temperature
KR1020027014904A KR20020094016A (en) 2001-03-08 2002-03-08 System and method to control radial delta temperature

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US27453201P 2001-03-08 2001-03-08
US60/274,532 2001-03-08
US10/068,127 US6901317B2 (en) 2001-02-06 2002-02-06 Inertial temperature control system and method
US10/068,127 2002-02-06

Publications (2)

Publication Number Publication Date
WO2002073660A2 WO2002073660A2 (en) 2002-09-19
WO2002073660A3 true WO2002073660A3 (en) 2003-02-13

Family

ID=26748605

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/007034 WO2002073660A2 (en) 2001-03-08 2002-03-08 System and method to control radial delta temperature

Country Status (5)

Country Link
EP (1) EP1328966A4 (en)
JP (1) JP2004519855A (en)
CN (1) CN1459017A (en)
AU (1) AU2002242327A1 (en)
WO (1) WO2002073660A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7258892B2 (en) * 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7906393B2 (en) 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436172A (en) * 1991-05-20 1995-07-25 Texas Instruments Incorporated Real-time multi-zone semiconductor wafer temperature and process uniformity control system
US6133550A (en) * 1996-03-22 2000-10-17 Sandia Corporation Method and apparatus for thermal processing of semiconductor substrates
US6294394B1 (en) * 1999-07-01 2001-09-25 Voyan Technology Ramp rate limiter to control stress during ramping
US6348099B1 (en) * 1996-11-13 2002-02-19 Applied Materials, Inc. Methods and apparatus for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions
US6350964B1 (en) * 2000-11-09 2002-02-26 Applied Materials, Inc. Power distribution printed circuit board for a semiconductor processing system
US6423949B1 (en) * 1999-05-19 2002-07-23 Applied Materials, Inc. Multi-zone resistive heater

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5063518A (en) * 1989-11-16 1991-11-05 Grumman Aerospace Corporation Alarm system for a crystal growing furnace
US5044943A (en) * 1990-08-16 1991-09-03 Applied Materials, Inc. Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus
JP2002515648A (en) * 1998-05-11 2002-05-28 セミトゥール・インコーポレイテッド Heating reactor temperature control system

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436172A (en) * 1991-05-20 1995-07-25 Texas Instruments Incorporated Real-time multi-zone semiconductor wafer temperature and process uniformity control system
US5635409A (en) * 1991-05-20 1997-06-03 Texas Instruments Incorporated Real-time multi-zone semiconductor wafer temperature and process uniformity control system
US6133550A (en) * 1996-03-22 2000-10-17 Sandia Corporation Method and apparatus for thermal processing of semiconductor substrates
US6355909B1 (en) * 1996-03-22 2002-03-12 Sandia Corporation Method and apparatus for thermal processing of semiconductor substrates
US6348099B1 (en) * 1996-11-13 2002-02-19 Applied Materials, Inc. Methods and apparatus for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions
US6423949B1 (en) * 1999-05-19 2002-07-23 Applied Materials, Inc. Multi-zone resistive heater
US6294394B1 (en) * 1999-07-01 2001-09-25 Voyan Technology Ramp rate limiter to control stress during ramping
US6350964B1 (en) * 2000-11-09 2002-02-26 Applied Materials, Inc. Power distribution printed circuit board for a semiconductor processing system

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1328966A4 *

Also Published As

Publication number Publication date
JP2004519855A (en) 2004-07-02
AU2002242327A1 (en) 2002-09-24
EP1328966A4 (en) 2006-08-30
CN1459017A (en) 2003-11-26
WO2002073660A2 (en) 2002-09-19
EP1328966A2 (en) 2003-07-23

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