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WO2000042685A1 - Laser a semi-conducteur, a puits quantiques multiples, a dopage module de type n - Google Patents

Laser a semi-conducteur, a puits quantiques multiples, a dopage module de type n Download PDF

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Publication number
WO2000042685A1
WO2000042685A1 PCT/JP1999/007063 JP9907063W WO0042685A1 WO 2000042685 A1 WO2000042685 A1 WO 2000042685A1 JP 9907063 W JP9907063 W JP 9907063W WO 0042685 A1 WO0042685 A1 WO 0042685A1
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Prior art keywords
layer
type
laser device
multiple quantum
semiconductor laser
Prior art date
Application number
PCT/JP1999/007063
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English (en)
Japanese (ja)
Inventor
Hitoshi Shimizu
Kouji Kumada
Akihiko Kasukawa
Original Assignee
The Furukawa Electric Co., Ltd.
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Filing date
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Priority to CA002322532A priority Critical patent/CA2322532A1/fr
Priority to EP99959845A priority patent/EP1071180A4/fr
Publication of WO2000042685A1 publication Critical patent/WO2000042685A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length

Definitions

  • the present invention relates to an ⁇ -type modulation-doped multi-quantum well semiconductor laser device that emits light in a wavelength band of 600 to 165 O nm, and more particularly to a conventional semiconductor laser device.
  • the present invention relates to an ⁇ -type modulation-doped multiple quantum well semiconductor laser device that oscillates at a higher output.
  • a multi-quantum well semiconductor laser device can achieve high-power oscillation, including a well layer made of a semiconductor material and having a low bandgap energy with a thickness on the order of nm, and a well layer with a thickness also on the order of nm.
  • the active layer is a multiple quantum well (hereinafter referred to as MQW) structure in which the barrier layer made of a semiconductor material whose band gap energy is higher than that of the well layer is alternately heterojunctioned. It oscillates at a lower threshold current than a semiconductor laser device having a layer.
  • MQW multiple quantum well
  • a lower cladding layer, a lower optical confinement layer, and the above-described active layer are sequentially formed on a predetermined semiconductor substrate by an epitaxial crystal growth method, and an upper optical confinement layer is formed on the active layer. It has a layer structure in which a layer, an upper cladding layer, and a contact layer are sequentially formed.
  • Cleavage is performed on this layer structure so as to have a predetermined cavity length, and one cleavage plane (front end face) serving as an emission end face is made of, for example, a single layer of SiN x. are low-reflection film is deposited in layers, high-reflection film on the other cleavage plane (rear surface) made by alternately laminating example alpha-S i layer and S i N x layer is deposited, and the semiconductor An n-type electrode made of, for example, Au-GeZNiZAu is formed on the back surface of the substrate, and a p-type electrode made of, for example, TiZPtZAu is formed on the contact layer in an atomic junction. It is formed in a state.
  • Such an MQW semiconductor laser device oscillates at a higher output than a semiconductor laser device having a bulk active layer.
  • an MQW semiconductor laser device is used as a pumping laser device for exciting, for example, an Er-doped fiber amplifier (EDFA), further higher output is required.
  • EDFA Er-doped fiber amplifier
  • Fig. 1 shows a layer structure example A near the active layer in a conventionally known high-power MQW semiconductor laser device oscillating in the 130 Ornn band as an energy band diagram of a conductor. .
  • This layer structure A is formed between an n-type lower cladding layer 1a composed of n-type InP and a p-type upper cladding layer 1b composed of p-type InP, and has a band gap wavelength ( ⁇ g).
  • ⁇ g band gap wavelength
  • lower optical confinement layer 2a with a composition of 12 Onm and a thickness of GaInAsP with a composition of ⁇ g of 1.1 m
  • An active layer having three quantum wells is interposed between the upper optical confinement layer 2b of 12 Onm.
  • This active layer is formed between an 8 nm-thick well layer 3 a made of non-doped InAsP having a compressive strain of 1.45% and each well layer, and has a bandgap wavelength (A g) of 1.1 / g. It is composed of a barrier layer 3b having a thickness of 1 Onm and made of non-doped InGaAsP having a composition of zm.
  • a non-doped MQW structure can be obtained by forming high-reflection films on both end surfaces to reduce mirror loss.
  • the threshold current is lower than that of a laser element having a structure.
  • the cavity length is as short as 200 m or less, and a highly reflective film must be formed on both end surfaces. Therefore, the goal is to reduce the threshold current to about 1 mA or less.
  • An object of the present invention is to provide an n-type modulation-doped MQW semiconductor laser device as described above, in which various parameters described later are controlled to achieve higher output power than a conventional n-type modulation-doped MQW semiconductor laser device.
  • An object of the present invention is to provide an n-type modulation doped MQW semiconductor laser device.
  • Another object of the present invention is to provide an n-type modulated doped MQW semiconductor laser that emits light at various wavelengths within a wavelength band of 600 to 165 nm by selecting a semiconductor material forming a well layer. It is to provide an element.
  • an n-type modulated deep multiple quantum well semiconductor laser device comprising:
  • It has a multiple quantum well structure consisting of a heterojunction structure of a well layer and a barrier layer; the well layer is made of a non-doped semiconductor material; and the barrier layer is made of a semiconductor material that is modulation-doped with an n-type dopant. ing;
  • a low-reflection film is formed on the front end surface, and a high-reflection film is formed on the rear end surface; and the resonator length is 800 m or more, and the following formula: nf 1 ,
  • the mirror loss (a m ) represented by is less than or equal to 15 cm- 1 .
  • the doping concentration of the n-type dopant in the barrier layer is 5 ⁇ 10 17 to 3 ⁇ 10 18 cm— 3
  • the reflectance (R f) of the front end face is 1 to 10%.
  • the reflectivity (R r) of the rear end face is 80 to 100%, which is an n-type modulation-doped multiple quantum well semiconductor laser device.
  • the MQW structure may be constituted by a strain compensation type well layer, and the n-type dopant is preferably Si, Se or Sn, and the number of the well layers is 1 to 15
  • the number of the n-type modulation-doped multiple quantum well semiconductor laser devices may be one.
  • an n-type modulation-doped multiple quantum well semiconductor laser device emitting light in a wavelength band of 1200 to 165 Onm, and forming the well layer by GaI
  • An n-type modulated doped multiple quantum well semiconductor laser device emitting light in a wavelength band of 600 to 165 Onm by providing the well layer with A 1 GaInAs is provided.
  • FIG. 2 shows an energy band diagram of the layer structure near the active layer of the element B.
  • a modulation doping portion 3 c having a thickness of 7 nm is formed at the center of each barrier layer 3 b, and the lower / upper optical confinement layers 2 a and 2 b also have a junction interface of the well layer 3.
  • a modulation doping portion 3c having a thickness of 7 nm is formed at a position 1.5 mn apart from the modulation doping portion 3c.
  • Element B and element A shown in Fig. 1 Element B and element A shown in Fig. 1
  • the straight line a indicated by ⁇ indicates the case of the non-doped element A
  • the straight line b 1 indicated by the hatched line indicates the case of the element B in which the modulation doping concentration of Si is 1 ⁇ 10 18 cm— 3.
  • the straight line b2 indicated by the triangle indicates the case of the element B in which the modulation doping concentration of Si is 5 ⁇ 10 18 cm ⁇ 3 .
  • the threshold current density J th in the low mirror loss region where the mirror loss (a m ) is lower than 15 cm- 1.
  • the threshold injection carrier density per well layer is also low.
  • doping concentration 5 XI 0 18 cm_ 3 and the above-described effect becomes a high concentration is not obtained, et al.
  • the resonator length (L), the reflectivity of the front end face (R f), and the reflectivity of the rear end face (R r) are properly selected so that the mirror loss (a m ) is less than 15cm- 1. If the barrier layer 3b is modulated and doped with an n-type dopant in a concentration range of 5 ⁇ 10 17 to 3 ⁇ 10 18 cm— 3 , the threshold injection carrier density per well layer becomes low, and Since the threshold value is lower than that of a single device, a high-power laser device can be obtained.
  • the above-mentioned device B (having a doping concentration of 1 ⁇ 10 18 cm_ 3 ) and device A were manufactured by changing the resonator length (L), and the following formula:
  • a straight line c indicated by ⁇ indicates the case of the element A
  • a straight line d indicated by ⁇ indicates the case of the element B.
  • the internal loss () was calculated from the slope of each straight line in FIG.
  • the internal loss () of the non-doped device A was ⁇ . ⁇ - 1
  • the internal loss () of device ⁇ was estimated to be 4.6 cm- 1 . That is, it was found that the internal loss () of the element B was reduced by about 23% compared to the internal loss () of the non-doped element A.
  • the present inventors attempted to manufacture a high-power laser device. If the resonator length (L) as the device was too short, the electrical resistance of the active layer increased, and the P-type electrode was activated during device operation. Consideration is also given to the fact that the injected current causes resistance heating and thermal saturation of the light output. Then, while assuming that the mirror loss (a m ) calculated by equation (1) is 15 cm- 1 or less, we examined the appropriate resonator length (L) and found that the electrical resistance of the active layer was reduced. We found that the cavity length (L) should be set to 800 / m or more in order to lower it.
  • FIG. 5 shows an example of the layer structure of the device of the present invention.
  • the light confinement layer 12b, the upper cladding layer lib, and the contact layer 14 are stacked in this order.
  • Each of these layers is composed of a semiconductor material as described below, and is formed by an epitaxial crystal growth method such as a gas source MBE method, MBE method, CBE method, MOC VD method, or the like.
  • An electrode (n-type electrode) 15a is formed on the back surface of the substrate 10, and an electrode (p-type electrode) 15b is formed on the contact layer 14 in an ohmic junction state.
  • the end surface) S 1 for example, S i N x composed of a single layer low-reflective film 16 a is deposited, on the rear end surface S 2 example a- S i layer and S i N x layer multiple layer product alternately A layered high reflection film 16b is formed.
  • the active layer 13 has an MQW structure having a heterojunction structure of a well layer 13 a made of a non-doped semiconductor material and a barrier layer 13 b made of a semiconductor material modulated and doped with an n-type dopant. Has become.
  • the layer structure of the active layer 13 is, as shown in the energy band diagram, a barrier layer having an n-type modulation doped portion 13c at the center. It has an MQW structure with 13b.
  • the number of the well layers is not limited to three as described above, and may be in the range of 1 to 15.
  • the n-type modulation doping shown in FIG. 5 is an example in which the n-type modulation doping is performed on 3c which is a part of the barrier layer 3b.
  • the n-type modulation doping is not limited to this mode.
  • the entire layer 3b may be doped, and the doped portion may be biased upward or downward instead of the center of the barrier layer 3b.
  • Examples of the n-type dopant to be modulation-doped in the barrier portion 13b include Si and Se.
  • the doping concentration is set to 5 ⁇ 10 17 to 3 ⁇ 10 18 cm ⁇ 3 .
  • the cavity length (L) and low reflection film 16 are adjusted so that the mirror loss (a m ) calculated from Eq. (1) is 15 cm- 1 or less. This is because the threshold current density (J th ) does not become lower than that of the non-doped device even if the reflectance (R f) of a and the reflectance (R r) of the highly reflective film 16 b are selected.
  • the preferred doping concentration is 1 ⁇ 10 18 to 2 ⁇ 10 18 cm— 3 .
  • the active layer 13 may be formed of a strain-compensated MQW. This is because the strain compensation type allows the number of wells to be increased up to 30th.
  • the resonator length (L) as an element is set to 800 / m or more.
  • the cavity length (L) is shorter than 80 O ⁇ m, the electrical resistance of the active layer 13 increases, and depending on the magnitude of the injected current, the resistive heating of the active layer 13 proceeds, which may cause thermal saturation of the optical output. Because there is.
  • the reflectance of the low reflection film 16a at the front end face (RO is set to 1 to 10%. If the Rf value is lower than 1%, the threshold current density ( Jth ) increases. There is a problem that the maximum saturation output does not increase, and if the Rf value is higher than 10%, the light output from the front end face (outgoing end face) becomes weak. This is because a serious problem arises.
  • the reflectance (Rr) of the high reflection film 16b on the rear end face is set to 80 to 100%. If it is lower than 80%, the light output from the front end face (outgoing end face) becomes weak, and the light output from the rear end face becomes strong.
  • the cavity length (L), the reflectance (R f) of the low reflection film 16a, and the reflectance (Rr) of the high reflection film 16b are all set to the above values.
  • the mirror loss (a m ) calculated based on equation (1) it is necessary to set the mirror loss (a m ) calculated based on equation (1) to a value that is 15 cm- 1 or less.
  • Fig. 1 is an energy band diagram showing the layer structure near the active layer of a conventional non-doped MQW semiconductor laser device
  • FIG. 2 is an energy band diagram showing a layer structure near an active layer in the laser device of the present invention
  • Fig. 3 is a graph showing the relationship between the threshold current density and the mirror loss in an MQW semiconductor laser device
  • FIG. 4 is a graph showing the relationship between the reciprocal of the external differential quantum efficiency and the cavity length in an MQW semiconductor laser device
  • FIG. 5 is a schematic diagram showing the layer structure of the laser device of the present invention (Example 1) and an energy band diagram showing the layer structure of the active layer;
  • FIG. 6 is a perspective view showing an example of the overall structure of the laser device according to the embodiment.
  • FIG. 7 is a graph showing light output-current characteristics of the laser device of Example 1.
  • FIG. 8 is a schematic diagram showing a layer structure of a laser device (Example 2) of the present invention and an energy band diagram showing a layer structure of an active layer;
  • FIG. 9 is a schematic diagram showing a layer structure of a laser device (Example 3) of the present invention and an energy band diagram showing a layer structure of an active layer.
  • An n-type modulation-doped MQW semiconductor laser device of the present invention oscillating in the wavelength band of 130 Omn and having the layer structure shown in FIG. 5, was manufactured as follows.
  • n-type I n P consists thickness 0. 6 m of the n-type cladding layer 1 1 a, I n 0 of the lattice-matched system.
  • a 0.4 m thick contact layer 14 of P-type InGaAs was formed sequentially.
  • Active layer 13 has a compressive strain 1.45% pharynx one flop I nAs 0. 45 P. .
  • three well layers 13 a of thickness 8 nm made of 55, is formed between these well layers 13 a, I n 0. 86 Ga 0. "As 0. 306 ⁇ 0. 694 ( ⁇ g 1.1 m), 7 nm thick Si n-type modulation doped part (doping concentration: l X 10 18 cnT 3 ) in the center
  • the active layer 13 has a structure having the energy band diagram shown in FIG.
  • Photolithography and mesa etching are performed on the obtained laminated structure to produce a buried hetero-type element structure in which the width of the active layer 13 is 1.2 im.
  • the striped portion including terrorism was etched away to the substrate 10 leaving a width of 30 to form a trench structure.
  • a P-type electrode 15b made of TiZPtZAu (or Au-Zn) is formed on the contact layer 14, and the back surface of the substrate 10 is polished to reduce the overall thickness to about 100 m.
  • An n-type electrode 15a made of Au—GeZN i ZAu was formed on the polished surface.
  • this element has a mirror loss (aj is 12.7 cm- 1 1 n) calculated by equation (1).
  • a laser device (non-doped) was manufactured in the same manner as in the example except that the modulation doping portion 13c was not formed in the barrier layer 13b.
  • the optical output-current characteristics of these two types of laser devices were examined.
  • Fig. 7 shows the results. As is clear from FIG. 7, the light output of each of these laser elements has reached a saturation state at an injection current of about 1 A. In that case, the optical output of the conventional non-doped laser device is about 28 OmW, but the optical output of the laser element of the embodiment is about 33 Onm, and high output has been achieved.
  • a material may be used, and the material is not limited to the lattice matching system and may be a strain-based material.
  • InAsP was used for the well layer, GaInAsP, AlGaInAs, GaInNAs, and the like may be used.
  • n-type clad layer 1 1 a although the p-type cladding layer 1 1 b using I nP, may be used A 10. 48 I n 0. 52 As lattice-matched to I nP. As the optical confinement layer, GR IN-SCH may be used instead of SCH.
  • Example 2
  • An n-type modulated doped MQW semiconductor laser device of the present invention which oscillates in the wavelength band of 148 Onm and has the layer structure shown in FIG. 8, was manufactured as follows.
  • n-type cladding layer 11a made of n-type InP
  • lower GRIN—SCH21a active layer 22.
  • Upper GR IN— SCH2 lb is sequentially deposited, and then a 2 m thick p-type cladding layer 1 1b, p-type InGaP, consisting of p-type InP force Contact layers 14 having a thickness of 0.4 m were sequentially formed.
  • Lower GR IN- SCH2 1 a includes an I n 0. 86 G a 0 .
  • the upper GR IN-SCH 21 b is connected to the lower GR IN-SCH 21 a with respect to the active layer 22 described later. It has a symmetric layer structure. Specifically, a lattice-matched system I n Q.
  • Photolithography and mesa etching are performed on the obtained laminated structure to produce a buried hetero-type device structure in which the width of the active layer 22 is 1.2 tm, and a trench structure is formed in the same manner as in Example 1. did.
  • a p-type electrode 15b made of Ti / PtZAu (or Au—Zn) is formed on the contact layer 14 and the back surface of the substrate 10 is polished to reduce the overall thickness to about 100 m.
  • an n-type electrode 15a made of Au—GeZN i ZAu was formed on the polished surface.
  • the whole is cleaved to set the cavity length (L) to 1200 ⁇ m, and the front end face (emitter end face) S 1 has a reflectivity (R f) of 5% and a SiN x single layer 16 forming a a, other cleavage plane (rear surface) reflectance S 2 (R r) forming a 9 a 6% such a- S i ZS i N x or made highly reflective film 1 6 b
  • R r cleavage plane
  • Example 3 An n-type modulation-doped MQW semiconductor laser device of the present invention which oscillates in the wavelength band of 98 Onm and has the layer structure shown in FIG. 9 was manufactured as follows.
  • Gao. 9 As thickness 30 nm of the lower light confinement layer 31 a 2, G a a s thickness 15 nm comprising a light confinement layer 32 a, the active layer 33, G a a s consists thickness 15 nm of the optical confinement layer 32 b, p-type A 101 Ga.
  • An upper optical confinement layer 31 b 2 having a thickness of 3 Asm of 9 As and an upper cladding layer 31 of p-type A 1 a3 Ga a7 As are sequentially formed, and a 0.3 m-thick layer of p-type Ga As is further formed thereon.
  • the contact layer 34 was sequentially formed.
  • the active layer 33 has a compressive strain of 1.4%, pharynx one flop Ga 0. 81 and I n 0. 19 2 pieces of the well layer 33 having a thickness of 7 nm consisting As a, between these well layers 33 a It is formed of GaAs and has a 10 nm thick barrier layer 33 b having a thickness of 7 nm at the center and an n-type modulation doping portion of Si (doping concentration: l ⁇ 10 18 cm— 3 ) 33 c. Configured. That is, this active layer has a structure having the energy band diagram shown in FIG.
  • the obtained laminated structure was subjected to photolithography and mesa etching to produce a ridge waveguide type laser with an active layer width of 3 m.
  • the resonator length (L) was set to 1 OO O ⁇ m.
  • the reflectivity of the front end face was 8%, and the reflectivity of the rear end face was 96%.
  • the mirror loss (a m ) of this device is 12.8 cm- 1 .
  • the saturated light output was increased by about 15% as compared with the non-doped laser device as in Example 1, and the output was increased.
  • the buried hetero element structure is mainly shown, but the element structure of the present invention is not limited to this, and may be a ridge waveguide element structure or a TJS type.
  • the wavelength of 130 Onm, 1480 nm, 98 Onm the structure of the laser device of the present invention is also applicable to MQW laser devices with wavelength bands of 165 Onm, 1550 nm, 850 nm, 780 nm, 680 nm, 630 nm, and 60 Onm. can do.
  • the wavelength band is a short wavelength of 600 to 100 Onm, Ga As may be mainly used for the substrate. Industrial applicability
  • the n-type modulation-doped multiple quantum well semiconductor laser device of the present invention oscillates at a higher output than the conventional semiconductor laser device, and has a wavelength of 600 to 165 Onm by changing the semiconductor material of the well layer. Emit light in a band.
  • This laser device is of great industrial value, for example, as a 148 Onm laser device for EDFA excitation.

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Abstract

Cette invention concerne un laser à semi-conducteur, à puits quantiques multiples, à dopage modulé de type n, comprenant une structure à hétérojonction d'une couche de puits et d'une couche d'arrêt. La couche de puits est faite d'un matériau semi-conducteur non dopé, la couche d'arrêt d'un matériau semi-conducteur à dopage modulé avec un dopant de type n. On forme un film à faible réflexion sur la face du bord avant, et un film à réflexion élevée sur la face du bord arrière; la longueur de la cavité à est de 800 νm ou plus, et la perte miroir (αm) exprimée par αm = (1/2L)ln(1(Rf.Rr)) (dans laquelle L est la longueur de la cavité (cm), Rf est la réflexion de la face du bord avant et Rr la réflexion de la face du bord arrière) est de 15 cm-1 ou moins. Comparée à celle de lasers à semi-conducteur à puits quantiques multiples non dopés classiques, l'émission laser est élevée, de même qu'est élevée la valeur industrielle du laser selon l'invention utilisé par exemple comme laser de 1480 nm pour excitation EDFA (amplificateur dopé à l'erbium)
PCT/JP1999/007063 1999-01-11 1999-12-16 Laser a semi-conducteur, a puits quantiques multiples, a dopage module de type n WO2000042685A1 (fr)

Priority Applications (2)

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CA002322532A CA2322532A1 (fr) 1999-01-11 1999-12-16 Laser a semi-conducteur, a puits quantiques multiples, a dopage module de type n
EP99959845A EP1071180A4 (fr) 1999-01-11 1999-12-16 Laser a semi-conducteur, a puits quantiques multiples, a dopage module de type n

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JP449799 1999-01-11
JP11/4497 1999-01-11
JP44889999 1999-04-26
JP11/118488 1999-04-26

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7006545B2 (en) 2000-10-02 2006-02-28 The Furukawa Electric Co., Ltd. Semiconductor laser device and optical fiber amplifier using the same
JP2010157707A (ja) * 2008-12-01 2010-07-15 Furukawa Electric Co Ltd:The 光半導体装置および光ファイバ増幅器用励起光源
JP2018500762A (ja) * 2015-01-05 2018-01-11 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス部品
JP2022101442A (ja) * 2020-12-24 2022-07-06 日亜化学工業株式会社 窒化物半導体発光素子およびその製造方法

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JP7260807B2 (ja) 2020-12-24 2023-04-19 日亜化学工業株式会社 窒化物半導体発光素子およびその製造方法

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