USD845920S1 - Portion of light-emitting diode unit - Google Patents
Portion of light-emitting diode unit Download PDFInfo
- Publication number
- USD845920S1 USD845920S1 US29/623,528 US201729623528F USD845920S US D845920 S1 USD845920 S1 US D845920S1 US 201729623528 F US201729623528 F US 201729623528F US D845920 S USD845920 S US D845920S
- Authority
- US
- United States
- Prior art keywords
- light
- emitting diode
- diode unit
- view
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Description
The broken lines in the drawing depict portions of the light emitting diode unit that form no part of the claimed design.
Claims (1)
- The ornamental design for a portion of light-emitting diode unit, as shown and described.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29/623,528 USD845920S1 (en) | 2015-08-12 | 2017-10-25 | Portion of light-emitting diode unit |
US29/682,110 USD927436S1 (en) | 2015-08-12 | 2019-03-01 | Portion of light-emitting diode unit |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104304354 | 2015-08-12 | ||
TW104304354F TWD177985S (en) | 2015-08-12 | 2015-08-12 | Portion of light-emitting diode unit |
US29/554,553 USD782428S1 (en) | 2015-08-12 | 2016-02-12 | Portion of light-emitting diode unit |
US29595081 | 2017-02-24 | ||
US29/623,528 USD845920S1 (en) | 2015-08-12 | 2017-10-25 | Portion of light-emitting diode unit |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US29595081 Continuation-In-Part | 2015-08-12 | 2017-02-24 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US29/682,110 Division USD927436S1 (en) | 2015-08-12 | 2019-03-01 | Portion of light-emitting diode unit |
Publications (1)
Publication Number | Publication Date |
---|---|
USD845920S1 true USD845920S1 (en) | 2019-04-16 |
Family
ID=66046204
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US29/623,528 Active USD845920S1 (en) | 2015-08-12 | 2017-10-25 | Portion of light-emitting diode unit |
US29/682,110 Active USD927436S1 (en) | 2015-08-12 | 2019-03-01 | Portion of light-emitting diode unit |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US29/682,110 Active USD927436S1 (en) | 2015-08-12 | 2019-03-01 | Portion of light-emitting diode unit |
Country Status (1)
Country | Link |
---|---|
US (2) | USD845920S1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD927436S1 (en) * | 2015-08-12 | 2021-08-10 | Epistar Corporation | Portion of light-emitting diode unit |
Citations (47)
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US20040124422A1 (en) * | 2002-10-03 | 2004-07-01 | Takahiko Sakamoto | Light-emitting diode |
US20060220043A1 (en) | 2005-03-30 | 2006-10-05 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting device |
US20070080353A1 (en) | 2005-10-07 | 2007-04-12 | Samsung Electro-Mechanics Co., Ltd | Nitride-based semiconductor light emitting diode and method of manufacturing the same |
US20080142821A1 (en) | 2006-06-28 | 2008-06-19 | Nichia Corporation | Semiconductor light emitting device |
USD579019S1 (en) | 2007-08-27 | 2008-10-21 | Podium Photonics (Guangzhou) Ltd. | Chip |
US20090212319A1 (en) | 2006-06-13 | 2009-08-27 | Showa Denko K.K. | Gallium nitride-based compound semiconductor light emitting device |
US7884379B2 (en) | 2006-05-29 | 2011-02-08 | Nichia Corporation | Nitride semiconductor light emitting device |
US20110147784A1 (en) * | 2009-12-18 | 2011-06-23 | Sharp Kabushiki Kaisha | Light emitting device with more uniform current spreading |
US20110156086A1 (en) * | 2009-12-29 | 2011-06-30 | Seoul Opto Device Co., Ltd. | Light emitting diode having electrode extensions |
US20110163346A1 (en) * | 2010-01-07 | 2011-07-07 | Seoul Opto Device Co., Ltd. | Light emitting diode having electrode pads |
US20110198641A1 (en) * | 2010-02-17 | 2011-08-18 | Toyoda Gosei Co., Ltd. | Semiconductor light-emitting element |
US20110215363A1 (en) | 2010-03-08 | 2011-09-08 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
USD647494S1 (en) | 2010-09-09 | 2011-10-25 | Tekcore Co., Ltd. | Light-emitting diode |
USD647493S1 (en) | 2010-11-19 | 2011-10-25 | Tekcore Co., Ltd. | Light-emitting diode |
US20110278634A1 (en) * | 2010-05-17 | 2011-11-17 | Na Mingyu | Light-emitting device and lighting apparatus |
US20120098023A1 (en) | 2010-10-20 | 2012-04-26 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting device |
US8188504B2 (en) | 2006-03-26 | 2012-05-29 | Lg Innotek Co., Ltd. | Light-emitting device and method for manufacturing the same including a light-emitting device and a protection device electrically connected by a connecting line |
US20120267672A1 (en) * | 2011-04-19 | 2012-10-25 | Semicon Light Co., Ltd. | Semiconductor Light-Emitting Device |
US8319233B2 (en) | 2010-12-10 | 2012-11-27 | Lg Innotek Co., Ltd. | Light emitting device |
US20130075914A1 (en) | 2011-09-27 | 2013-03-28 | Nichia Corporation | Semiconductor element |
US20130146929A1 (en) * | 2010-08-23 | 2013-06-13 | Seoul Opto Device Co., Ltd. | Light emitting diode |
US8471242B2 (en) | 2010-12-20 | 2013-06-25 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package and lighting system |
US20130234192A1 (en) * | 2010-11-18 | 2013-09-12 | Seoul Opto Device Co., Ltd. | Light emitting diode chip having electrode pad |
US8546840B2 (en) | 2011-02-07 | 2013-10-01 | Nichia Corporation | Semiconductor light emitting element |
US20140225143A1 (en) | 2013-02-12 | 2014-08-14 | Nichia Corporation | Light emitting device |
US20140231852A1 (en) | 2013-02-15 | 2014-08-21 | Seoul Viosys Co., Ltd. | Led chip resistant to electrostatic discharge and led package including the same |
USD716238S1 (en) | 2012-12-31 | 2014-10-28 | Epistar Corporation | Light-emitting diode array |
US20140374785A1 (en) * | 2013-06-19 | 2014-12-25 | Lg Innotek Co., Ltd. | Light emitting device and lighting apparatus including the same |
US20150076536A1 (en) * | 2013-08-27 | 2015-03-19 | Epistar Corporation | Light-emitting element having a plurality of light-emitting structures |
US20150076445A1 (en) * | 2013-09-17 | 2015-03-19 | Lextar Electronics Corporation | Light-emitting diodes |
US20150187997A1 (en) * | 2013-12-30 | 2015-07-02 | Lextar Electronics Corporation | Light-emitting diode chip |
US20150236207A1 (en) | 2014-02-17 | 2015-08-20 | Nichia Corporation | Semiconductor light emitting element |
US20160020363A1 (en) * | 2014-07-18 | 2016-01-21 | Nichia Corporation | Method of manufacturing light emitting element |
USD750580S1 (en) | 2014-10-30 | 2016-03-01 | Epistar Corporation | Light-emitting diode array |
US20160079467A1 (en) | 2014-09-16 | 2016-03-17 | Toyoda Gosei Co., Ltd. | Group iii nitride semiconductor light-emitting device and production method therefor |
US9306123B2 (en) | 2012-12-07 | 2016-04-05 | Epistar Corporation | Light-emitting element |
US20160172540A1 (en) | 2014-12-15 | 2016-06-16 | Toyoda Gosei Co., Ltd. | Light-emitting device |
US9401456B2 (en) | 2012-12-14 | 2016-07-26 | Seoul Viosys Co., Ltd. | Light-emitting diode with improved light extraction efficiency |
US20160225956A1 (en) | 2015-01-29 | 2016-08-04 | Toyoda Gosei Co., Ltd. | Group iii nitride semiconductor light-emitting device |
US9484500B2 (en) | 2013-06-17 | 2016-11-01 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device and method of manufacturing the same |
USD782428S1 (en) | 2015-08-12 | 2017-03-28 | Epistar Corporation | Portion of light-emitting diode unit |
US20170110629A1 (en) * | 2014-07-01 | 2017-04-20 | Seoul Viosys Co., Ltd. | Light emitting element |
US20170125640A1 (en) | 2015-05-13 | 2017-05-04 | Seoul Viosys Co., Ltd. | Light emitting element |
US9666779B2 (en) * | 2013-11-25 | 2017-05-30 | Yangzhou Zhongke Semiconductor Lighting Co., Ltd. | Semiconductor light emitting diode chip with current extension layer and graphical current extension layers |
US20170186918A1 (en) * | 2015-12-25 | 2017-06-29 | Nichia Corporation | Light emitting element |
US20170186914A1 (en) | 2015-12-24 | 2017-06-29 | Nichia Corporation | Light-emitting element and method of manufacturing the same |
USD797064S1 (en) * | 2016-05-09 | 2017-09-12 | Epistar Corporation | Light-emitting diode array |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD845920S1 (en) * | 2015-08-12 | 2019-04-16 | Epistar Corporation | Portion of light-emitting diode unit |
-
2017
- 2017-10-25 US US29/623,528 patent/USD845920S1/en active Active
-
2019
- 2019-03-01 US US29/682,110 patent/USD927436S1/en active Active
Patent Citations (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040124422A1 (en) * | 2002-10-03 | 2004-07-01 | Takahiko Sakamoto | Light-emitting diode |
US20060220043A1 (en) | 2005-03-30 | 2006-10-05 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting device |
US20070080353A1 (en) | 2005-10-07 | 2007-04-12 | Samsung Electro-Mechanics Co., Ltd | Nitride-based semiconductor light emitting diode and method of manufacturing the same |
US8188504B2 (en) | 2006-03-26 | 2012-05-29 | Lg Innotek Co., Ltd. | Light-emitting device and method for manufacturing the same including a light-emitting device and a protection device electrically connected by a connecting line |
US7884379B2 (en) | 2006-05-29 | 2011-02-08 | Nichia Corporation | Nitride semiconductor light emitting device |
US20090212319A1 (en) | 2006-06-13 | 2009-08-27 | Showa Denko K.K. | Gallium nitride-based compound semiconductor light emitting device |
US20080142821A1 (en) | 2006-06-28 | 2008-06-19 | Nichia Corporation | Semiconductor light emitting device |
US7947996B2 (en) | 2006-06-28 | 2011-05-24 | Nichia Corporation | Semiconductor light emitting element |
USD579019S1 (en) | 2007-08-27 | 2008-10-21 | Podium Photonics (Guangzhou) Ltd. | Chip |
US20110147784A1 (en) * | 2009-12-18 | 2011-06-23 | Sharp Kabushiki Kaisha | Light emitting device with more uniform current spreading |
US20110156086A1 (en) * | 2009-12-29 | 2011-06-30 | Seoul Opto Device Co., Ltd. | Light emitting diode having electrode extensions |
US20110163346A1 (en) * | 2010-01-07 | 2011-07-07 | Seoul Opto Device Co., Ltd. | Light emitting diode having electrode pads |
US20110198641A1 (en) * | 2010-02-17 | 2011-08-18 | Toyoda Gosei Co., Ltd. | Semiconductor light-emitting element |
US20110215363A1 (en) | 2010-03-08 | 2011-09-08 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
US8461615B2 (en) * | 2010-03-08 | 2013-06-11 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
US20110278634A1 (en) * | 2010-05-17 | 2011-11-17 | Na Mingyu | Light-emitting device and lighting apparatus |
US20130146929A1 (en) * | 2010-08-23 | 2013-06-13 | Seoul Opto Device Co., Ltd. | Light emitting diode |
USD647494S1 (en) | 2010-09-09 | 2011-10-25 | Tekcore Co., Ltd. | Light-emitting diode |
US20120098023A1 (en) | 2010-10-20 | 2012-04-26 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting device |
US20130234192A1 (en) * | 2010-11-18 | 2013-09-12 | Seoul Opto Device Co., Ltd. | Light emitting diode chip having electrode pad |
USD647493S1 (en) | 2010-11-19 | 2011-10-25 | Tekcore Co., Ltd. | Light-emitting diode |
US8319233B2 (en) | 2010-12-10 | 2012-11-27 | Lg Innotek Co., Ltd. | Light emitting device |
US8471242B2 (en) | 2010-12-20 | 2013-06-25 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package and lighting system |
US8546840B2 (en) | 2011-02-07 | 2013-10-01 | Nichia Corporation | Semiconductor light emitting element |
US20120267672A1 (en) * | 2011-04-19 | 2012-10-25 | Semicon Light Co., Ltd. | Semiconductor Light-Emitting Device |
US20130075914A1 (en) | 2011-09-27 | 2013-03-28 | Nichia Corporation | Semiconductor element |
US9306123B2 (en) | 2012-12-07 | 2016-04-05 | Epistar Corporation | Light-emitting element |
US9401456B2 (en) | 2012-12-14 | 2016-07-26 | Seoul Viosys Co., Ltd. | Light-emitting diode with improved light extraction efficiency |
USD716238S1 (en) | 2012-12-31 | 2014-10-28 | Epistar Corporation | Light-emitting diode array |
US20140225143A1 (en) | 2013-02-12 | 2014-08-14 | Nichia Corporation | Light emitting device |
US20140231852A1 (en) | 2013-02-15 | 2014-08-21 | Seoul Viosys Co., Ltd. | Led chip resistant to electrostatic discharge and led package including the same |
US9484500B2 (en) | 2013-06-17 | 2016-11-01 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device and method of manufacturing the same |
US20140374785A1 (en) * | 2013-06-19 | 2014-12-25 | Lg Innotek Co., Ltd. | Light emitting device and lighting apparatus including the same |
US20150076536A1 (en) * | 2013-08-27 | 2015-03-19 | Epistar Corporation | Light-emitting element having a plurality of light-emitting structures |
US20150076445A1 (en) * | 2013-09-17 | 2015-03-19 | Lextar Electronics Corporation | Light-emitting diodes |
US9666779B2 (en) * | 2013-11-25 | 2017-05-30 | Yangzhou Zhongke Semiconductor Lighting Co., Ltd. | Semiconductor light emitting diode chip with current extension layer and graphical current extension layers |
US20150187997A1 (en) * | 2013-12-30 | 2015-07-02 | Lextar Electronics Corporation | Light-emitting diode chip |
US20150236207A1 (en) | 2014-02-17 | 2015-08-20 | Nichia Corporation | Semiconductor light emitting element |
US20170110629A1 (en) * | 2014-07-01 | 2017-04-20 | Seoul Viosys Co., Ltd. | Light emitting element |
US20160240742A1 (en) | 2014-07-18 | 2016-08-18 | Nichia Corporation | Method of manufacturing light emitting element |
US20160020363A1 (en) * | 2014-07-18 | 2016-01-21 | Nichia Corporation | Method of manufacturing light emitting element |
US20160079467A1 (en) | 2014-09-16 | 2016-03-17 | Toyoda Gosei Co., Ltd. | Group iii nitride semiconductor light-emitting device and production method therefor |
USD750580S1 (en) | 2014-10-30 | 2016-03-01 | Epistar Corporation | Light-emitting diode array |
US20160172540A1 (en) | 2014-12-15 | 2016-06-16 | Toyoda Gosei Co., Ltd. | Light-emitting device |
US20160225956A1 (en) | 2015-01-29 | 2016-08-04 | Toyoda Gosei Co., Ltd. | Group iii nitride semiconductor light-emitting device |
US20170125640A1 (en) | 2015-05-13 | 2017-05-04 | Seoul Viosys Co., Ltd. | Light emitting element |
USD782428S1 (en) | 2015-08-12 | 2017-03-28 | Epistar Corporation | Portion of light-emitting diode unit |
US20170186914A1 (en) | 2015-12-24 | 2017-06-29 | Nichia Corporation | Light-emitting element and method of manufacturing the same |
US20170186918A1 (en) * | 2015-12-25 | 2017-06-29 | Nichia Corporation | Light emitting element |
USD797064S1 (en) * | 2016-05-09 | 2017-09-12 | Epistar Corporation | Light-emitting diode array |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD927436S1 (en) * | 2015-08-12 | 2021-08-10 | Epistar Corporation | Portion of light-emitting diode unit |
Also Published As
Publication number | Publication date |
---|---|
USD927436S1 (en) | 2021-08-10 |
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Legal Events
Date | Code | Title | Description |
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FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: BIG.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |