US8896693B2 - System and method for monitoring multiple targets using a single camera - Google Patents
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- US8896693B2 US8896693B2 US13/396,446 US201213396446A US8896693B2 US 8896693 B2 US8896693 B2 US 8896693B2 US 201213396446 A US201213396446 A US 201213396446A US 8896693 B2 US8896693 B2 US 8896693B2
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/131—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing infrared wavelengths
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- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/133—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light
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- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
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- H04N25/58—Control of the dynamic range involving two or more exposures
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- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
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Definitions
- the present invention is related to the area of image sensors and surveillance. More particularly, the present invention is related to CMOS sensors with high-sensitivity, and system and method for monitoring multiple targets using a single camera.
- Surveillance is the monitoring of the behavior, activities, or other changing information, usually of people for the purpose of influencing, managing, directing, or protecting.
- the word surveillance is applied to observation from a distance by means of electronic equipment (such as CCTV cameras), or interception of moving information (such as various traffic).
- Traffic cameras are an innovative and extremely functional use of video surveillance technology. They are atop traffic signals and placed along busy roads, and at busy intersections of the highway. Whether they are recording traffic patterns for future study and observation or monitoring traffic and issuing tickets for moving violations, traffic cameras are an explosively popular form of video surveillance.
- An image sensor is a device that converts a scene or an optical image into an electronic signal.
- CCD charge-coupled device
- CMOS complementary metal-oxide-semiconductor
- CCD image sensors are more expensive than CMOS image sensors because CMOS sensors are less expensive to manufacture than CCD sensors.
- CMOS image sensors can potentially be implemented with fewer components, use less power, and/or provide faster readout than CCD image sensors can.
- CCD image sensors are more sensitive to light variations than CMOS image sensors.
- the present invention pertains to designs of image sensors and its practical uses.
- subpixels within a pixel are designed without significantly increasing the cell or pixel area of the pixel.
- the readouts from the subpixels are accumulated to increase the sensitivity of the pixel without increasing the area of the image sensor.
- subpixels within a pixel are respectively coated with filters, each designed for a frequency range.
- filters each designed for a frequency range.
- an image sensor is provided with two or more readout circuits, each operating independently and is designed to read out charges from a designated area of the image sensor.
- two or more designated sensing areas in the image sensor are being focused onto different objects and read out respectively, such an image sensor is capable of monitoring multiple targets.
- a camera equipped with such an image sensor is able to monitor multiple forward and backward lanes. Further with the control of the designated areas, different resolutions of the images may be produced.
- the present invention may be implemented in various ways including an apparatus or a system.
- the present invention is an image sensor comprising an array of pixels, each of the pixels including: N subpixels producing N sensing signals when the image sensor is operated to sense a scene; N readout circuits coupled respectively to the N subpixels to read out N sensing signals from the N subpixels, wherein each of the N readout circuits is coupled to one of the N subpixels to read out one sensing signal therefrom; and an integrator provided to combine the N sensing signals of the N subpixels to produce a final sensing signal of a pixel.
- the present invention is an image sensor comprising an array of pixels, each of the pixels including: N subpixels producing N sensing signals when the image sensor is operated to sense a scene, each of the N subpixels being integrated with a different optical filter to transmit a predefined frequency band; N readout circuits coupled respectively to the N subpixels to read out N sensing signals from the N subpixels, wherein each of the N readout circuits is coupled to one of the N subpixels to read out one sensing signal therefrom; and N independent integrators provided respectively to output the N sensing signals.
- Some of the sensing signals are enough to reproduce visible color images while another some of the sensing signals facilitate to detect nonvisible objects in the scene under low lighting condition.
- the present invention is a camera for monitoring multiple targets
- the camera comprises an image sensor being divided into N non-overlapping sensing areas respectively controlled by N integration times to ensure that each of the sensing areas outputs a properly-exposed sensing signal when the camera is operated to sense a scene; and N readout circuits, each of the N readout circuits coupled to one of the sensing areas to read out the properly-exposed sensing signal therefrom when the camera is operated to sense a scene.
- FIG. 1A shows a functional block diagram of a single pixel in an image sensor
- FIG. 1B shows one embodiment of a corresponding pixel according to one embodiment of the present invention
- FIG. 1C shows an exemplary design employing the standard 3 transistors that may be used for the pixel of FIG. 1B ;
- FIG. 1D shows an exemplary readout circuit employing the correlated double sampling (CDS) circuitry to read out the sensing signal from the pixel of FIG. 1B ;
- CDS correlated double sampling
- FIG. 2 shows an exemplary implementation of a CMOS pixel along with an amplifier and a readout circuit that may be used in FIG. 1A ;
- FIG. 3 shows a circuit diagram for a readout circuit that may be used in FIG. 1B to read out the four individual output voltage Vpd from the subpixels;
- FIG. 4 shows a CDS circuit taking multiple inputs that may be used as a readout circuit in FIG. 3 ;
- FIG. 5 shows an embodiment with an anti-blooming structure to prevent sensing signals of subpixels from being saturated when combined
- FIG. 6A shows another embodiment of using the subpixels to enhance the frequency response of the image sensor contemplated in the present invention
- FIG. 6B shows a spectrum covering colors that can be reproduced by red, green and blue, typically visible in day time, and a near-infrared (NIR) area, typically visible in dark or very low lighting condition, along with two exemplary silicon materials that may be used for the NIR area;
- NIR near-infrared
- FIG. 7A shows an image sensor being supported by four readout circuits, each of the readout circuits operating independently, where the image sensor is virtually divided into four sensing areas;
- FIG. 7B shows an illustration of a freeway segment in which there are four forward lanes and backward lanes with respect to a camera employing the image sensor of FIG. 7A ;
- FIG. 7C shows an exemplary application of controlling different integration times for the divided sensing areas to monitor multiple targets.
- An active-pixel sensor is an image sensor includes an integrated circuit containing an array of pixel sensors, each pixel containing a photodetector and an active amplifier.
- CMOS APS There are many types of active pixel sensors including the CMOS APS.
- Such an image sensor is produced by a CMOS process (and is hence also known as a CMOS sensor), and has emerged as an alternative to charge-coupled device (CCD) image sensors.
- CCD charge-coupled device
- FIG. 1A shows a functional block diagram 100 of a single pixel 102 in an image sensor.
- the image sensor (hence the pixel 102 ) is exposed (e.g., via a shutter) to a scene, charges proportional to the incoming light intensity are accumulated in the pixel 102 .
- FIG. 1C shows an exemplary design 120 employing the standard 3 transistors that may be used for the pixel 102 .
- the current sensing readout circuit of FIG. 1C employs a structure shared by the pixels of a row (or column).
- a readout circuit 104 is provided to read out the charges accumulated in proportional to the intensity of the light impinged on the pixel 102 .
- FIG. 1D shows an exemplary readout circuit employing the correlated double sampling (CDS) circuitry to read out the sensing signal from the pixel 102 .
- An amplifier also referred to as charge integrator 106 , is provided to produce a final sensing signal to be coupled for digitization.
- FIG. 1B shows one embodiment 110 of a corresponding pixel 112 according to one embodiment of the present invention.
- the pixel 112 includes a number of subpixels.
- the pixel 112 in FIG. 1B shows that there are four subpixels.
- the subpixels are respectively impinged by an incoming light. Charge is accumulated in each of the subpixels.
- An adder-type CDS circuit 114 is provided to combine the readouts from the subpixels.
- An amplifier, also referred to as charge integrator 116 is provided to produce a final combined sensing signal to be coupled for digitization.
- FIG. 2 shows an exemplary implementation 200 of a CMOS pixel 202 along with an amplifier 204 and a readout circuit 206 that may be used in FIG. 1A .
- the amplifier 204 is a unity gain buffer amplifier (a.k.a., UGA) 204 and the readout circuit 206 is a correlated double sampling (CDS) circuit.
- UGA unity gain buffer amplifier
- CDS correlated double sampling
- Jl the current density which related to the intensity of the incoming light
- A the area of the photodiode 208
- Cd the depletion capacitance
- Tint the integration time of the photodiode 208 .
- the subpixels as designed in FIG. 1B can contribute together to the total readout of the output voltage Vpd of the pixel 112 , essentially four (4) times the original output voltage Vpd from the photodiode 202 in FIG. 1B .
- FIG. 3 shows a circuit diagram for a readout circuit 300 that may be used in FIG. 1B to read out the four individual output voltage Vpd from the subpixels.
- FIG. 4 shows a CDS circuit taking multiple inputs. It is assumed that there are n subpixels. Accordingly, the charges are respectively stored in n capacitors Ch 1 , Ch 2 , . . . , Chn of the n subpixels.
- the total charges Qt can be expressed in the following:
- FIG. 5 shows an embodiment with an anti-blooming structure 500 that is designed to present the sensing signals of the subpixels from being saturated when combined.
- the sensing signals of the subpixels could be of high.
- the output or final result from the integrator could be saturated, resulting in a useless signal.
- the anti-blooming structure 500 is provided to ensure that each of the sensing signal does not exceed a predefined threshold (e.g., a voltage level).
- a predefined threshold e.g., a voltage level.
- each of the pixels is coated with a filter designed to cover a frequency band.
- a pixel 602 in an image includes four subpixels, respectively coated with red, green, blue and near-infrared (NIR) filters or red, green and blue filters with the fourth one having no filter at all.
- the subpixels are respectively read out by a corresponding number of readout circuits 604 , and are then processed respectively by a corresponding number of charger integrators 606 .
- an image sensor implemented with the pixel 600 is designed to cover four different frequency bands and has advantages including a broader frequency range covering not only the visible color spectrum but also some invisible spectrum, making the image sensor useful in many inspection applications (e.g., traffic surveillance in day and night).
- FIG. 6B shows a spectrum 620 covering colors 622 that can be reproduced by red, green and blue, typically visible in day time, and a near-infrared (NIR) area 624 , typically visible in dark or very low lighting conditions.
- the colors can reproduced from sensing signals in day time when the lighting condition is relative bright. When the lighting condition is low, the colors 622 can no longer reproduced from the sensing signals, the NIR area 624 can be seen.
- the image sensor implemented with the pixel structure 600 can be readily used for lighting conditions that may change dramatically.
- the fourth pixel in the pixel structure 600 may be coated with a NIR filter or no filter at all.
- the silicon material 630 or 632 itself may serve to transmit the light in the NIR band, thus there is no filter needed for the fourth subpixel.
- FIG. 7A it shows an image sensor 700 being supported by four readout circuits, each of the circuits operating independently with different integration times.
- the image sensor 700 is virtually divided into four parts (sensing areas). With a properly-adjusted integration time (e.g., determined by an average sensing signal of the entire sensing area in one part), each of the parts in the image sensor 700 may be used to image a different target.
- FIG. 7B shows an illustration of a freeway segment in which there are four forward lanes and four backward lanes with respect to a camera 708 employing the image sensor 700 .
- each of the parts in the image sensor 700 controlled with an appropriate integration time is provided with a readout circuit to facilitate the sensing signals to be read out for subsequent processing.
- FIG. 7C replicates FIG. 7B to show how the four parts of an image sensor are configured to monitor the eight forward lanes and backward lanes.
- the integration times T 1 and T 2 for the sensing parts P 1 and P 2 may be adjusted similarly so that the images read out from the parts P 1 and P 2 are focused near the focal planes 712 and 713 while the integration times T 3 and T 4 for the sensing parts P 3 and P 4 may be adjusted similarly so that the images read out from the parts P 3 and P 4 are focused near the focal planes 710 and 711 .
- the integration times T 1 and T 2 for the sensing parts P 1 and P 2 may be adjusted similarly so that the images read out from the parts P 1 and P 2 are focused near the focal planes 712 and 713 while the integration times T 3 and T 4 for the sensing parts P 3 and P 4 may be adjusted similarly so that the images read out
- sensing signals are read out from the sensing parts P 1 and P 2 .
- the sensing signals may also be read out from the parts P 3 and P 4 , the sensing signals will not be useful as they are underexposed.
- the sensing signals may still be read out from the parts P 1 and P 2 , the sensing signals would not be useful as they are now overexposed.
- the integration times T 1 -T 4 may all be adjusted differently to ensure that the sensing signals read out from the corresponding sensing parts P 1 -P 4 are from proper exposure to the predefined focused or monitored areas in the scene.
- the image sensor 700 is implemented according to the pixel of FIG. 1B , thus the sensitivity of the image sensor 700 is considerably enhanced, making it more suitable for surveillance applications in dynamic changes of the lighting conditions, such as traffic surveillance in day and night.
- the implementation of the image sensor 700 is not limited to the pixel of FIG. 1B .
- Those skilled in the art may appreciate that the virtual dividing an image sensor with individual readout circuits may be applied to other types of image sensors.
- using the subpixel structure as shown in FIG. 1B will enhance the sensitivity of the image sensor 700 without increasing the area of the image sensor 700 .
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Abstract
Description
Vpd=Q/C=(J L ×A)×Tint/(Cd×A)=J L×Tint/Cd
Thus it can be concluded that the output voltage Vpd from the
in readout mode: the charges are transferred to Cf, thus
Qf=(Vr−Vo)×Cf
In one embodiment, Qf=Qt, the output Vo is expressed as follows:
Vo=−[(V1−Vr)×Ch1+(V2−Vr)×Ch2+ . . . +(Vn−Vr)×Chn]/Cf+Vr
Vo=−nCh/Cf×(Vi−Vr)+Vr
Thus it can be concluded that the signal of a pixel with n subpixels is read out with gain of −n Ch/Cf, where n is the number of the inputs to the CDS.
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CN2013100508512A CN103259986A (en) | 2012-02-14 | 2013-02-14 | Photographic device monitoring multiple targets |
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US20130208154A1 (en) * | 2012-02-14 | 2013-08-15 | Weng Lyang Wang | High-sensitivity CMOS image sensors |
WO2016047240A1 (en) * | 2014-09-24 | 2016-03-31 | ソニー株式会社 | Image processing device, image pickup element, image pickup device, and image processing method |
US10574910B2 (en) | 2015-02-26 | 2020-02-25 | Sony Semiconductor Solutions Corporation | Method and apparatus for controlling a luminance composition unit |
CN110290335B (en) * | 2019-07-31 | 2021-09-21 | 王勇 | High-speed image sensor with frame frequency capable of reaching bandwidth limit rate |
US10827090B1 (en) * | 2019-09-16 | 2020-11-03 | Innolux Corporation | Electronic device and method for operating electronic device |
WO2022036713A1 (en) * | 2020-08-21 | 2022-02-24 | 深圳市汇顶科技股份有限公司 | Image sensor, fingerprint detection apparatus, and electronic device |
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US20090290043A1 (en) * | 2008-05-22 | 2009-11-26 | Panavision Imaging, Llc | Sub-Pixel Array Optical Sensor |
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CN101313345B (en) * | 2005-11-18 | 2010-05-26 | 新科电子(资讯通信系统)私人有限公司 | System and method for detecting driving against road traffic regulation |
JP4449936B2 (en) * | 2006-03-31 | 2010-04-14 | ソニー株式会社 | Imaging apparatus, camera system, and driving method thereof |
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US20090292413A1 (en) * | 2005-12-14 | 2009-11-26 | Matsushita Electric Industrial Co., Ltd. | Dangerous drive predicting apparatus |
US20090225189A1 (en) * | 2008-03-05 | 2009-09-10 | Omnivision Technologies, Inc. | System and Method For Independent Image Sensor Parameter Control in Regions of Interest |
US20090290043A1 (en) * | 2008-05-22 | 2009-11-26 | Panavision Imaging, Llc | Sub-Pixel Array Optical Sensor |
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