US8721845B2 - Coated article and method for making same - Google Patents
Coated article and method for making same Download PDFInfo
- Publication number
- US8721845B2 US8721845B2 US13/207,990 US201113207990A US8721845B2 US 8721845 B2 US8721845 B2 US 8721845B2 US 201113207990 A US201113207990 A US 201113207990A US 8721845 B2 US8721845 B2 US 8721845B2
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- US
- United States
- Prior art keywords
- layer
- fingerprint layer
- sccm
- fingerprint
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
- C23C14/5833—Ion beam bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3457—Sputtering using other particles than noble gas ions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Definitions
- the present disclosure relates to coated articles, particularly to a coated article having an anti-fingerprint property and a method for making the coated article.
- anti-fingerprint layers are usually painted on with a paint containing organic anti-fingerprint substances.
- the paint on anti-fingerprint layers usually bond weakly with metal substrates and therefore may not last very long. Furthermore, the paint may not be environmentally friendly.
- FIG. 1 is a cross-sectional view of an exemplary embodiment of a coated article.
- FIG. 2 is a cross-sectional view of another exemplary embodiment of a coated article.
- FIG. 1 shows a coated article 100 according to an exemplary embodiment.
- the coated article 100 may be a housing for an electronic device.
- the coated article 100 includes a substrate 10 , and an anti-fingerprint layer 30 formed on a surface of the substrate 10 .
- the anti-fingerprint layer 30 includes a first anti-fingerprint layer 31 and a second anti-fingerprint layer 33 .
- the substrate 10 may be made of a metal or non-metal material.
- the metal material may be selected from the group consisting of stainless steel, aluminum, aluminum alloy, magnesium alloy, copper, copper alloy, and zinc.
- the non-metal material may be plastic, ceramic, or glass.
- the first anti-fingerprint layer 31 is an aluminum oxide (Al 2 O 3 ) layer.
- the first anti-fingerprint layer 31 is formed on the substrate 11 by vacuum sputtering deposition.
- the first anti-fingerprint layer 31 may be transparent and have a thickness of about 200 nm-300 nm.
- the second anti-fingerprint layer 33 may be an aluminum-oxygen-nitrogen (Al—O—N) compound layer.
- the second anti-fingerprint layer 33 is implanted with one or more ion species selected from the group consisting of fluorine ion, boron ion, and nitrogen ion in a surface layer.
- the second anti-fingerprint layer 33 is formed on the first anti-fingerprint layer 31 by vacuum sputtering deposition.
- the second anti-fingerprint layer 33 may be transparent and have a thickness of about 200 nm-300 nm.
- the coated article 100 may further include a decorative layer 20 located between the substrate 10 and the first anti-fingerprint layer 31 , to provide decorative color or patterns for the coated article 100 .
- the decorative layer 20 may be a metallic coating formed by vacuum sputtering deposition.
- the implanted ion species selected from the group consisting of fluorine ion, boron ion, and nitrogen ion increase the entropy of the surface layer of the second anti-fingerprint layer 33 , and increasing the disorderliness of the atoms in the surface layer of the second anti-fingerprint layer 33 .
- the surface energy of the second anti-fingerprint 33 is further reduced. Accordingly, the coated article 100 achieves a good anti-fingerprint property.
- An exemplary method for making the coated article 100 may include the following steps:
- the substrate 10 is provided.
- the substrate 10 is pretreated.
- the substrate 10 is cleaned with a solution (e.g., alcohol or acetone) in an ultrasonic cleaner, to remove impurities such as grease or dirt from the substrate 10 .
- a solution e.g., alcohol or acetone
- an ultrasonic cleaner to remove impurities such as grease or dirt from the substrate 10 .
- the substrate 10 is dried.
- the substrate 10 is plasma cleaned.
- the substrate 10 may be positioned in a vacuum chamber of a vacuum sputtering machine (not shown).
- the vacuum chamber is fixed with aluminum targets therein.
- the vacuum chamber is then evacuated to about 8.0 ⁇ 10 ⁇ 3 Pa.
- Argon Ar, having a purity of about 99.999%) is injected into the chamber at a flow rate of about 500 standard-state cubic centimeters per minute (sccm) to 800 sccm.
- a bias voltage of about ⁇ 500 V to about ⁇ 800 V is applied to the substrate 10 .
- Ar is ionized to plasma.
- the plasma then strikes the surface of the substrate 10 to clean the surface of the substrate 10 .
- Plasma cleaning the substrate 10 may take about 5 minutes (min) to 10 min.
- the plasma cleaning process enhances the bond between the substrate 10 and the anti-fingerprint layer 30 .
- the aluminum targets are unaffected by the plasma cleaning process.
- the first anti-fingerprint layer 31 is vacuum sputtered on the pretreated substrate 10 .
- Vacuum sputtering of the first anti-fingerprint layer 31 is implemented in a vacuum chamber of the vacuum sputtering machine.
- the inside of the vacuum chamber is heated to maintain a temperature of about 50° C.-180° C.
- Ar and oxygen (O 2 ) are simultaneously fed into the chamber, with the Ar acting as a sputtering gas, and the O 2 acting as a reaction gas.
- the flow rate of the Ar is about 100 sccm to 300 sccm.
- the flow rate of the O 2 is about 100 sccm-300 sccm.
- a bias voltage of about ⁇ 70 V to about ⁇ 180 V may be applied to the substrate 10 .
- the power is a medium-frequency AC power in this exemplary embodiment.
- the second anti-fingerprint layer 33 is directly formed on the first anti-fingerprint layer 31 by vacuum sputtering.
- Sputtering of the anti-fingerprint layer 15 is implemented in the vacuum chamber of the vacuum sputtering machine.
- Ar, O 2 , and nitrogen (N 2 ) are simultaneously fed into the chamber, with the Ar acting as a sputtering gas, and the O 2 and N 2 acting as reaction gases.
- the flow rate of the N 2 is about 50 sccm to 150 sccm.
- About 2 kW-5 kW of power is applied to the aluminum targets, depositing the second anti-fingerprint layer 33 on the first anti-fingerprint layer 31 .
- Other parameters are the same as the deposition of the first anti-fingerprint layer 31 .
- the deposition of the second anti-fingerprint layer 33 may take about 20 min-60 min.
- ion species selected from the group consisting of fluorine ion, boron ion, and nitrogen ion are implanted into a surface layer of the second anti-fingerprint layer 33 by ion implantation process.
- the implantation process can be implemented in the vacuum chamber of the vacuum sputtering machine.
- the ion implantation process is performed by supplying a process gas into a plasma source attached to the vacuum sputtering machine.
- the plasma source dissociates the process gas into ions.
- the dissociated ions are accelerated to become ion beams and are implanted into the second anti-fingerprint layer 33 .
- One or more process gas supplied into the plasma source may be selected from the group consisting of CF 4 , B 2 H 6 , and N 2 .
- the ion implantation process may be performed under the following conditions.
- the vacuum chamber is evacuated to maintain an internal pressure of about 1 ⁇ 10 ⁇ 4 Pa.
- the process gas supplied into the plasma source maintains a working atmosphere from about 0.1 Pa to about 0.5 Pa.
- a RF source power of about 30 thousand volts (kV) to about 100 kV is applied to dissociate the process gas to be ions.
- the ions are accelerated to form ion beams.
- the ion beams have an intensity of about 1 milliampere (mA) to about 5 mA.
- the density of the ions implanted in the second anti-fingerprint layer 33 may be from about 1 ⁇ 10 16 ions per square centimeter (ions/cm 2 ) to about 1 ⁇ 10 18 ions/cm 2 .
- the vacuum chamber may be maintained at a normal room temperature.
- the method for making the coated article 100 may further include forming the decorative layer 20 on the substrate 10 by vacuum sputtering deposition, before forming the first anti-fingerprint layer 31 .
- the anti-fingerprint property of the anti-fingerprint layer 30 has been tested by using a dyne test pen (brand: ACCU; place of production: U.S.A.). The test indicates that the surface tension of the anti-fingerprint layer 30 is below 30 dynes, thus, the anti-fingerprint layer 30 has a good anti-fingerprint property.
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010568122 | 2010-12-01 | ||
CN201010568122.2 | 2010-12-01 | ||
CN201010568122.2A CN102485938B (en) | 2010-12-01 | 2010-12-01 | Part coated with anti-fingerprint coating and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
US20120141784A1 US20120141784A1 (en) | 2012-06-07 |
US8721845B2 true US8721845B2 (en) | 2014-05-13 |
Family
ID=46151512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/207,990 Expired - Fee Related US8721845B2 (en) | 2010-12-01 | 2011-08-11 | Coated article and method for making same |
Country Status (2)
Country | Link |
---|---|
US (1) | US8721845B2 (en) |
CN (1) | CN102485938B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102560348A (en) * | 2010-12-29 | 2012-07-11 | 鸿富锦精密工业(深圳)有限公司 | Coating part and manufacturing method thereof |
CN102560349A (en) * | 2010-12-29 | 2012-07-11 | 鸿富锦精密工业(深圳)有限公司 | Coating part and preparing method thereof |
CN102691045A (en) * | 2011-03-23 | 2012-09-26 | 鸿富锦精密工业(深圳)有限公司 | Aluminum or aluminum alloy shell and manufacturing method thereof |
CN105803408A (en) * | 2014-12-29 | 2016-07-27 | 天津三环乐喜新材料有限公司 | Neodymium-iron-boron permanent magnet surface protection method |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0661335A (en) * | 1992-08-04 | 1994-03-04 | Ulvac Japan Ltd | Wafer holding plate for semiconductor manufacturing device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008504636A (en) * | 2004-06-28 | 2008-02-14 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Optical data storage medium and combo foil cover for its manufacture |
CN201120753Y (en) * | 2007-08-01 | 2008-09-24 | 兆震实业股份有限公司 | Anti-soil protection structure for material |
CN101603190A (en) * | 2008-06-13 | 2009-12-16 | 富准精密工业(深圳)有限公司 | Titanium matrix composite and manufacture method thereof |
CN102477531B (en) * | 2010-11-26 | 2015-03-25 | 鸿富锦精密工业(深圳)有限公司 | Coating part and preparation method thereof |
-
2010
- 2010-12-01 CN CN201010568122.2A patent/CN102485938B/en not_active Expired - Fee Related
-
2011
- 2011-08-11 US US13/207,990 patent/US8721845B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0661335A (en) * | 1992-08-04 | 1994-03-04 | Ulvac Japan Ltd | Wafer holding plate for semiconductor manufacturing device |
Non-Patent Citations (2)
Title |
---|
Araiza et al "Optical, structural and electrical characteristics of aluminum oxynitride thin films depostited inan AR-N gas mixtrue RF sputtering system" Journ. of Mat'l Sci: mat'ls in Elec. 16 (2005) p. 657-661. * |
von-Richfhofen et al "Metastable single-phase polycrystalline aluminium oxynitride films grwon by MSIP: construction and structure" Thin Solif Films 283 (1996) p. 37-44. * |
Also Published As
Publication number | Publication date |
---|---|
CN102485938A (en) | 2012-06-06 |
CN102485938B (en) | 2015-03-25 |
US20120141784A1 (en) | 2012-06-07 |
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