US2829074A - Manufacture of evaporated layers - Google Patents
Manufacture of evaporated layers Download PDFInfo
- Publication number
- US2829074A US2829074A US522989A US52298955A US2829074A US 2829074 A US2829074 A US 2829074A US 522989 A US522989 A US 522989A US 52298955 A US52298955 A US 52298955A US 2829074 A US2829074 A US 2829074A
- Authority
- US
- United States
- Prior art keywords
- envelope
- evaporated
- photo
- conductive material
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/233—Manufacture of photoelectric screens or charge-storage screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Definitions
- a target electrode is formed by evaporating a layer of photo-conductive material on to a glass window at the end of an envelope and this layer is arranged to be scanned by an electron beam.
- Such a device is suitable for the generation of signals for television and similar purposes, these signals being generated during scanning of the target electrode by the electron beam after the point-to-point conductivity of the target electrode has been changed by projecting an optical image thereon.
- target electrode composed of photoconductive material such as antimony trisulphide, zinc selenide or cadmium sulphide
- the layer should be deposited so that it is of a spongy nature.
- a spongy layer it has been proposed see Patent No. 2,744,837 to evaporate antimony trisulphide in the presence of air at a fairly high gas pressure such as 1 millimetre or more of mercury. It is found that when evaporating in air it is necessary to employ the fairly high gas pressure above referred to in order to slow down the molecules of the evaporated material to an extent to cause the deposition of a spongy layer.
- the object of the present invention is to provide an' improved method of depositing a spongy layer of evapxenon.
- Xenon has a molecular weight of about 130 which is considerably higher than that of air, hence the energy transfer per collision is greater, and as a result lower gas pressures may in some cases be employed resulting in less scattering of the evaporated material.
- reference numeral 1 indicates the envelope of the discharge device having a glass end wall 2 provided with a transparent signal electrode 3 on to which a spongy layer 4 is required to be formed.
- the device shown in the drawing is provided with a cylindrical electrode 5 the end of which adjacent to the window 2 is provided with a mesh 6.
- the envelope l is provided with a side tube 7 by means of which, in known manner, a source S of material to be evaporated to form the layer 4 can be introduced so as to be disposed substantially centrally with respect to the window 2.
- This source 8 can be manipulated magnetically into and out of the envelope in known manner when required.
- the source 8 may comprise a boat containing antimony trisulphide or some other suitable photo-conductive material.
- the envelope 1 is first evacuated and then Xenon is introduced into the envelope and with the source 8 in the position shown in the drawing heating current is applied to the source in order to cause evaporation of the antimony trisulphide.
- the preferred gas pressure is 0.36 millimetre of mercury.
- the gas pressure should not, however, be less than 0.3 millimetre of mercury although higher pressures may be employed, for example 0.7 millimetre of mercury. If during the evaporation process the mesh 6 becomes clogged with the evaporated material, then the mesh can be cleared of said material by heating the mesh by eddy current heating.
- the mesh Since a lower gas pressure may be used compared with the case when air is employed, the mesh does not require to be heated to such a high degree as 450 C. when air is employed, so that there is less danger of wrinkling the mesh and also of causing decomposition of the evaporated material.
- the envelope is evacuated, the boat 8 removed and the side "tube 7 is then sealed off from the envelope 1.
- the method of depositing a spongy coating of photoconductive material on a surface in the interior of an envelope which comprises inserting the photo-conductive material in the envelope, evacuating the envelope, introducing xenon into the envelope at a pressure of 0.3 to 0.7 mm. of mercury and heating the photo-conductive material in the presence of Xenon to evaporate it to cause deposition of a spongy coating of photo-conductive material on said surface.
- said photo-conductive material is selected from the group consisting of antimony trisulphide, zinc selenide and cadmium sulphide;
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Physical Vapour Deposition (AREA)
Description
April 1, 1958 H. G. LUBSZYNSKI MANUFACTURE OF EVAPORATED LAYERS Filed July 19; 1955 xxXxXXXXxXXXx v 11:20 612201 E Gila/bag United States Patent MANUFACTURE OF EVAPORATEK LAYERS Hans Gerhard Lubszynski, Lawrence, England, assign-or to Electric & Musical Industries Limited, Hayes, Mid- This invention relates to the formation of evaporated layers.
Layers of evaporated material are frequently required as, for example, in electron discharge devices. In one type of electron discharge device a target electrode is formed by evaporating a layer of photo-conductive material on to a glass window at the end of an envelope and this layer is arranged to be scanned by an electron beam. Such a device is suitable for the generation of signals for television and similar purposes, these signals being generated during scanning of the target electrode by the electron beam after the point-to-point conductivity of the target electrode has been changed by projecting an optical image thereon.
In one form of target electrode, composed of photoconductive material such as antimony trisulphide, zinc selenide or cadmium sulphide, it is desirable that the layer should be deposited so that it is of a spongy nature. For the formation of such a spongy layer it has been proposed see Patent No. 2,744,837 to evaporate antimony trisulphide in the presence of air at a fairly high gas pressure such as 1 millimetre or more of mercury. It is found that when evaporating in air it is necessary to employ the fairly high gas pressure above referred to in order to slow down the molecules of the evaporated material to an extent to cause the deposition of a spongy layer. Slowing down of the evaporated material is caused by collisions between the molecules of the material and the gas atoms and the higher the gas pressure the more collisions occur in slowing down the molecules in order to cause themto stick together to form large particles necessary for the formation of a spongy layer. The larger, however, the number of collisions the greater is the scattering of molecules so that a smaller fraction of the evaporated material is deposited on the required area.
The object of the present invention is to provide an' improved method of depositing a spongy layer of evapxenon. Xenon has a molecular weight of about 130 which is considerably higher than that of air, hence the energy transfer per collision is greater, and as a result lower gas pressures may in some cases be employed resulting in less scattering of the evaporated material.
In order that the said invention may be clearly understood and readily carried into efiect, it will now be more fully described with reference to the accompanying drawing, which illustrates a portion of an electron discharge device employing an evaporated layer in accordance with the invention.
As shown in the drawing, reference numeral 1 indicates the envelope of the discharge device having a glass end wall 2 provided with a transparent signal electrode 3 on to which a spongy layer 4 is required to be formed. The device shown in the drawing is provided with a cylindrical electrode 5 the end of which adjacent to the window 2 is provided with a mesh 6. The envelope l is provided with a side tube 7 by means of which, in known manner, a source S of material to be evaporated to form the layer 4 can be introduced so as to be disposed substantially centrally with respect to the window 2. This source 8 can be manipulated magnetically into and out of the envelope in known manner when required. The source 8 may comprise a boat containing antimony trisulphide or some other suitable photo-conductive material. In order to form the spongy layer 4 the envelope 1 is first evacuated and then Xenon is introduced into the envelope and with the source 8 in the position shown in the drawing heating current is applied to the source in order to cause evaporation of the antimony trisulphide. The preferred gas pressure is 0.36 millimetre of mercury. The gas pressure should not, however, be less than 0.3 millimetre of mercury although higher pressures may be employed, for example 0.7 millimetre of mercury. If during the evaporation process the mesh 6 becomes clogged with the evaporated material, then the mesh can be cleared of said material by heating the mesh by eddy current heating. Since a lower gas pressure may be used compared with the case when air is employed, the mesh does not require to be heated to such a high degree as 450 C. when air is employed, so that there is less danger of wrinkling the mesh and also of causing decomposition of the evaporated material.
After the evaporation process has been completed and a desired thickness of spongy layer has been formed, the envelope is evacuated, the boat 8 removed and the side "tube 7 is then sealed off from the envelope 1.
What I claim is:
1. The method of depositing a spongy coating of photoconductive material on a surface in the interior of an envelope which comprises inserting the photo-conductive material in the envelope, evacuating the envelope, introducing xenon into the envelope at a pressure of 0.3 to 0.7 mm. of mercury and heating the photo-conductive material in the presence of Xenon to evaporate it to cause deposition of a spongy coating of photo-conductive material on said surface.
2. The method according to claim 1, in which said photo-conductive material is selected from the group consisting of antimony trisulphide, zinc selenide and cadmium sulphide;
ReferencesCited in the file of this patent UNITED STATES PATENTS 2,642,367 Pfund June 16, 1953 2,654,852 Goodrich Oct. 6, 1953 2,744,837 Forgue May 8, 1956 Forgue et a1. May 8, 1956
Claims (1)
1. THE METHOD OF DEPOSITING A SPONGY COATING OF PHOTOCONDUCTIVE MATERIAL ON A SURFACE IN THE INTERIOR OF AN ENVELOPE WHICH COMPRISES INSERTING THE PHOTO-CONDUCTIVE MATERIAL IN THE ENVELOPE, EVACUATING THE ENVELOPE, INTRODUCING XENON INTO THE ENVELOPE AT A PRESSURE OF 0.3 TO 0.7 MM. OF MERCURY AND HEATING THE PHOTO-CONDUCTIVE MATERIAL IN THE PRESENCE OF XENON TO EVAPORATE IT TO CAUSE DEPOSITION OF A SPONGY COATING OF PHOTO-CONDUCTIVE MATERIAL ON SAID SURFACE.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB21833/54A GB803511A (en) | 1954-07-27 | 1954-07-27 | Improvements in or relating to the manufacture of evaporated layers |
Publications (1)
Publication Number | Publication Date |
---|---|
US2829074A true US2829074A (en) | 1958-04-01 |
Family
ID=10169577
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US522989A Expired - Lifetime US2829074A (en) | 1954-07-27 | 1955-07-19 | Manufacture of evaporated layers |
Country Status (3)
Country | Link |
---|---|
US (1) | US2829074A (en) |
FR (1) | FR1137442A (en) |
GB (1) | GB803511A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3279938A (en) * | 1961-11-29 | 1966-10-18 | Westinghouse Electric Corp | Infrared transmitting optical filter having porous antimony triselenide layer |
US3383244A (en) * | 1955-02-15 | 1968-05-14 | Emi Ltd | Photo-sensitive devices employing photo-conductive coatings |
US3466183A (en) * | 1965-01-30 | 1969-09-09 | Tokyo Shibaura Electric Co | Method of manufacturing photoconductive layers |
US4097775A (en) * | 1955-08-04 | 1978-06-27 | Rca Corporation | Infrared sensitive photoconductive pickup tube |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2642367A (en) * | 1947-01-09 | 1953-06-16 | Us Sec War | Method of protecting lenses |
US2654852A (en) * | 1951-06-01 | 1953-10-06 | Rca Corp | Photoconductive target for cathode-ray devices |
US2744837A (en) * | 1951-06-01 | 1956-05-08 | Rca Corp | Photo-conductive targets for cathode ray devices |
US2745032A (en) * | 1951-06-01 | 1956-05-08 | Rca Corp | Photo-conductive targets for cathode ray devices |
-
1954
- 1954-07-27 GB GB21833/54A patent/GB803511A/en not_active Expired
-
1955
- 1955-07-19 US US522989A patent/US2829074A/en not_active Expired - Lifetime
- 1955-07-26 FR FR1137442D patent/FR1137442A/en not_active Expired
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2642367A (en) * | 1947-01-09 | 1953-06-16 | Us Sec War | Method of protecting lenses |
US2654852A (en) * | 1951-06-01 | 1953-10-06 | Rca Corp | Photoconductive target for cathode-ray devices |
US2744837A (en) * | 1951-06-01 | 1956-05-08 | Rca Corp | Photo-conductive targets for cathode ray devices |
US2745032A (en) * | 1951-06-01 | 1956-05-08 | Rca Corp | Photo-conductive targets for cathode ray devices |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3383244A (en) * | 1955-02-15 | 1968-05-14 | Emi Ltd | Photo-sensitive devices employing photo-conductive coatings |
US4097775A (en) * | 1955-08-04 | 1978-06-27 | Rca Corporation | Infrared sensitive photoconductive pickup tube |
US3279938A (en) * | 1961-11-29 | 1966-10-18 | Westinghouse Electric Corp | Infrared transmitting optical filter having porous antimony triselenide layer |
US3466183A (en) * | 1965-01-30 | 1969-09-09 | Tokyo Shibaura Electric Co | Method of manufacturing photoconductive layers |
Also Published As
Publication number | Publication date |
---|---|
FR1137442A (en) | 1957-05-28 |
GB803511A (en) | 1958-10-29 |
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