Nothing Special   »   [go: up one dir, main page]

US2829074A - Manufacture of evaporated layers - Google Patents

Manufacture of evaporated layers Download PDF

Info

Publication number
US2829074A
US2829074A US522989A US52298955A US2829074A US 2829074 A US2829074 A US 2829074A US 522989 A US522989 A US 522989A US 52298955 A US52298955 A US 52298955A US 2829074 A US2829074 A US 2829074A
Authority
US
United States
Prior art keywords
envelope
evaporated
photo
conductive material
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US522989A
Inventor
Lubszynski Hans Gerhard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMI Ltd
Electrical and Musical Industries Ltd
Original Assignee
EMI Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EMI Ltd filed Critical EMI Ltd
Application granted granted Critical
Publication of US2829074A publication Critical patent/US2829074A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233Manufacture of photoelectric screens or charge-storage screens
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Definitions

  • a target electrode is formed by evaporating a layer of photo-conductive material on to a glass window at the end of an envelope and this layer is arranged to be scanned by an electron beam.
  • Such a device is suitable for the generation of signals for television and similar purposes, these signals being generated during scanning of the target electrode by the electron beam after the point-to-point conductivity of the target electrode has been changed by projecting an optical image thereon.
  • target electrode composed of photoconductive material such as antimony trisulphide, zinc selenide or cadmium sulphide
  • the layer should be deposited so that it is of a spongy nature.
  • a spongy layer it has been proposed see Patent No. 2,744,837 to evaporate antimony trisulphide in the presence of air at a fairly high gas pressure such as 1 millimetre or more of mercury. It is found that when evaporating in air it is necessary to employ the fairly high gas pressure above referred to in order to slow down the molecules of the evaporated material to an extent to cause the deposition of a spongy layer.
  • the object of the present invention is to provide an' improved method of depositing a spongy layer of evapxenon.
  • Xenon has a molecular weight of about 130 which is considerably higher than that of air, hence the energy transfer per collision is greater, and as a result lower gas pressures may in some cases be employed resulting in less scattering of the evaporated material.
  • reference numeral 1 indicates the envelope of the discharge device having a glass end wall 2 provided with a transparent signal electrode 3 on to which a spongy layer 4 is required to be formed.
  • the device shown in the drawing is provided with a cylindrical electrode 5 the end of which adjacent to the window 2 is provided with a mesh 6.
  • the envelope l is provided with a side tube 7 by means of which, in known manner, a source S of material to be evaporated to form the layer 4 can be introduced so as to be disposed substantially centrally with respect to the window 2.
  • This source 8 can be manipulated magnetically into and out of the envelope in known manner when required.
  • the source 8 may comprise a boat containing antimony trisulphide or some other suitable photo-conductive material.
  • the envelope 1 is first evacuated and then Xenon is introduced into the envelope and with the source 8 in the position shown in the drawing heating current is applied to the source in order to cause evaporation of the antimony trisulphide.
  • the preferred gas pressure is 0.36 millimetre of mercury.
  • the gas pressure should not, however, be less than 0.3 millimetre of mercury although higher pressures may be employed, for example 0.7 millimetre of mercury. If during the evaporation process the mesh 6 becomes clogged with the evaporated material, then the mesh can be cleared of said material by heating the mesh by eddy current heating.
  • the mesh Since a lower gas pressure may be used compared with the case when air is employed, the mesh does not require to be heated to such a high degree as 450 C. when air is employed, so that there is less danger of wrinkling the mesh and also of causing decomposition of the evaporated material.
  • the envelope is evacuated, the boat 8 removed and the side "tube 7 is then sealed off from the envelope 1.
  • the method of depositing a spongy coating of photoconductive material on a surface in the interior of an envelope which comprises inserting the photo-conductive material in the envelope, evacuating the envelope, introducing xenon into the envelope at a pressure of 0.3 to 0.7 mm. of mercury and heating the photo-conductive material in the presence of Xenon to evaporate it to cause deposition of a spongy coating of photo-conductive material on said surface.
  • said photo-conductive material is selected from the group consisting of antimony trisulphide, zinc selenide and cadmium sulphide;

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Physical Vapour Deposition (AREA)

Description

April 1, 1958 H. G. LUBSZYNSKI MANUFACTURE OF EVAPORATED LAYERS Filed July 19; 1955 xxXxXXXXxXXXx v 11:20 612201 E Gila/bag United States Patent MANUFACTURE OF EVAPORATEK LAYERS Hans Gerhard Lubszynski, Lawrence, England, assign-or to Electric & Musical Industries Limited, Hayes, Mid- This invention relates to the formation of evaporated layers.
Layers of evaporated material are frequently required as, for example, in electron discharge devices. In one type of electron discharge device a target electrode is formed by evaporating a layer of photo-conductive material on to a glass window at the end of an envelope and this layer is arranged to be scanned by an electron beam. Such a device is suitable for the generation of signals for television and similar purposes, these signals being generated during scanning of the target electrode by the electron beam after the point-to-point conductivity of the target electrode has been changed by projecting an optical image thereon.
In one form of target electrode, composed of photoconductive material such as antimony trisulphide, zinc selenide or cadmium sulphide, it is desirable that the layer should be deposited so that it is of a spongy nature. For the formation of such a spongy layer it has been proposed see Patent No. 2,744,837 to evaporate antimony trisulphide in the presence of air at a fairly high gas pressure such as 1 millimetre or more of mercury. It is found that when evaporating in air it is necessary to employ the fairly high gas pressure above referred to in order to slow down the molecules of the evaporated material to an extent to cause the deposition of a spongy layer. Slowing down of the evaporated material is caused by collisions between the molecules of the material and the gas atoms and the higher the gas pressure the more collisions occur in slowing down the molecules in order to cause themto stick together to form large particles necessary for the formation of a spongy layer. The larger, however, the number of collisions the greater is the scattering of molecules so that a smaller fraction of the evaporated material is deposited on the required area.
The object of the present invention is to provide an' improved method of depositing a spongy layer of evapxenon. Xenon has a molecular weight of about 130 which is considerably higher than that of air, hence the energy transfer per collision is greater, and as a result lower gas pressures may in some cases be employed resulting in less scattering of the evaporated material.
In order that the said invention may be clearly understood and readily carried into efiect, it will now be more fully described with reference to the accompanying drawing, which illustrates a portion of an electron discharge device employing an evaporated layer in accordance with the invention.
As shown in the drawing, reference numeral 1 indicates the envelope of the discharge device having a glass end wall 2 provided with a transparent signal electrode 3 on to which a spongy layer 4 is required to be formed. The device shown in the drawing is provided with a cylindrical electrode 5 the end of which adjacent to the window 2 is provided with a mesh 6. The envelope l is provided with a side tube 7 by means of which, in known manner, a source S of material to be evaporated to form the layer 4 can be introduced so as to be disposed substantially centrally with respect to the window 2. This source 8 can be manipulated magnetically into and out of the envelope in known manner when required. The source 8 may comprise a boat containing antimony trisulphide or some other suitable photo-conductive material. In order to form the spongy layer 4 the envelope 1 is first evacuated and then Xenon is introduced into the envelope and with the source 8 in the position shown in the drawing heating current is applied to the source in order to cause evaporation of the antimony trisulphide. The preferred gas pressure is 0.36 millimetre of mercury. The gas pressure should not, however, be less than 0.3 millimetre of mercury although higher pressures may be employed, for example 0.7 millimetre of mercury. If during the evaporation process the mesh 6 becomes clogged with the evaporated material, then the mesh can be cleared of said material by heating the mesh by eddy current heating. Since a lower gas pressure may be used compared with the case when air is employed, the mesh does not require to be heated to such a high degree as 450 C. when air is employed, so that there is less danger of wrinkling the mesh and also of causing decomposition of the evaporated material.
After the evaporation process has been completed and a desired thickness of spongy layer has been formed, the envelope is evacuated, the boat 8 removed and the side "tube 7 is then sealed off from the envelope 1.
What I claim is:
1. The method of depositing a spongy coating of photoconductive material on a surface in the interior of an envelope which comprises inserting the photo-conductive material in the envelope, evacuating the envelope, introducing xenon into the envelope at a pressure of 0.3 to 0.7 mm. of mercury and heating the photo-conductive material in the presence of Xenon to evaporate it to cause deposition of a spongy coating of photo-conductive material on said surface.
2. The method according to claim 1, in which said photo-conductive material is selected from the group consisting of antimony trisulphide, zinc selenide and cadmium sulphide;
ReferencesCited in the file of this patent UNITED STATES PATENTS 2,642,367 Pfund June 16, 1953 2,654,852 Goodrich Oct. 6, 1953 2,744,837 Forgue May 8, 1956 Forgue et a1. May 8, 1956

Claims (1)

1. THE METHOD OF DEPOSITING A SPONGY COATING OF PHOTOCONDUCTIVE MATERIAL ON A SURFACE IN THE INTERIOR OF AN ENVELOPE WHICH COMPRISES INSERTING THE PHOTO-CONDUCTIVE MATERIAL IN THE ENVELOPE, EVACUATING THE ENVELOPE, INTRODUCING XENON INTO THE ENVELOPE AT A PRESSURE OF 0.3 TO 0.7 MM. OF MERCURY AND HEATING THE PHOTO-CONDUCTIVE MATERIAL IN THE PRESENCE OF XENON TO EVAPORATE IT TO CAUSE DEPOSITION OF A SPONGY COATING OF PHOTO-CONDUCTIVE MATERIAL ON SAID SURFACE.
US522989A 1954-07-27 1955-07-19 Manufacture of evaporated layers Expired - Lifetime US2829074A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB21833/54A GB803511A (en) 1954-07-27 1954-07-27 Improvements in or relating to the manufacture of evaporated layers

Publications (1)

Publication Number Publication Date
US2829074A true US2829074A (en) 1958-04-01

Family

ID=10169577

Family Applications (1)

Application Number Title Priority Date Filing Date
US522989A Expired - Lifetime US2829074A (en) 1954-07-27 1955-07-19 Manufacture of evaporated layers

Country Status (3)

Country Link
US (1) US2829074A (en)
FR (1) FR1137442A (en)
GB (1) GB803511A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3279938A (en) * 1961-11-29 1966-10-18 Westinghouse Electric Corp Infrared transmitting optical filter having porous antimony triselenide layer
US3383244A (en) * 1955-02-15 1968-05-14 Emi Ltd Photo-sensitive devices employing photo-conductive coatings
US3466183A (en) * 1965-01-30 1969-09-09 Tokyo Shibaura Electric Co Method of manufacturing photoconductive layers
US4097775A (en) * 1955-08-04 1978-06-27 Rca Corporation Infrared sensitive photoconductive pickup tube

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2642367A (en) * 1947-01-09 1953-06-16 Us Sec War Method of protecting lenses
US2654852A (en) * 1951-06-01 1953-10-06 Rca Corp Photoconductive target for cathode-ray devices
US2744837A (en) * 1951-06-01 1956-05-08 Rca Corp Photo-conductive targets for cathode ray devices
US2745032A (en) * 1951-06-01 1956-05-08 Rca Corp Photo-conductive targets for cathode ray devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2642367A (en) * 1947-01-09 1953-06-16 Us Sec War Method of protecting lenses
US2654852A (en) * 1951-06-01 1953-10-06 Rca Corp Photoconductive target for cathode-ray devices
US2744837A (en) * 1951-06-01 1956-05-08 Rca Corp Photo-conductive targets for cathode ray devices
US2745032A (en) * 1951-06-01 1956-05-08 Rca Corp Photo-conductive targets for cathode ray devices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3383244A (en) * 1955-02-15 1968-05-14 Emi Ltd Photo-sensitive devices employing photo-conductive coatings
US4097775A (en) * 1955-08-04 1978-06-27 Rca Corporation Infrared sensitive photoconductive pickup tube
US3279938A (en) * 1961-11-29 1966-10-18 Westinghouse Electric Corp Infrared transmitting optical filter having porous antimony triselenide layer
US3466183A (en) * 1965-01-30 1969-09-09 Tokyo Shibaura Electric Co Method of manufacturing photoconductive layers

Also Published As

Publication number Publication date
FR1137442A (en) 1957-05-28
GB803511A (en) 1958-10-29

Similar Documents

Publication Publication Date Title
US2910602A (en) Light sensitive devices
US2460093A (en) Cathode beam transmitter tube
US2883257A (en) Electron beam recording
US2572497A (en) Making fine mesh silica screens
US2829074A (en) Manufacture of evaporated layers
US2960617A (en) Electron discharge devices and to circuit arrangements embodying such devices
US3383244A (en) Photo-sensitive devices employing photo-conductive coatings
US2744837A (en) Photo-conductive targets for cathode ray devices
US2251992A (en) Picture transmitter tube
US2667600A (en) Television pickup tube
US2579772A (en) Method of making an image storage screen
US2960416A (en) Method of manufacturing screens for electron-discharge devices
US3011919A (en) Method of forming a multi-layer pick-up screen
US2967962A (en) Television and like camera tubes
US2745032A (en) Photo-conductive targets for cathode ray devices
US2900280A (en) Formation of layers of photo-conductive materials
US2809087A (en) Preparation of porous photoconductive layers
US3048502A (en) Method of making a photoconductive target
US3003075A (en) Infra-red sensitive devices
US2825834A (en) Image converter tubes
GB827059A (en) Improvements in or relating to photo-sensitive devices employing photo-conductive layers
US3195199A (en) Method of making targets for pickup tubes
US2758942A (en) Cathode-ray tube of the kind comprising a luminescent screen
US2881042A (en) Composite photoconductive layer
US2730639A (en) Target structures such as are utilised in television transmission tubes