US20060119982A1 - Magnetic head having an antistripping layer for preventing a magnetic layer from stripping - Google Patents
Magnetic head having an antistripping layer for preventing a magnetic layer from stripping Download PDFInfo
- Publication number
- US20060119982A1 US20060119982A1 US11/329,919 US32991906A US2006119982A1 US 20060119982 A1 US20060119982 A1 US 20060119982A1 US 32991906 A US32991906 A US 32991906A US 2006119982 A1 US2006119982 A1 US 2006119982A1
- Authority
- US
- United States
- Prior art keywords
- layer
- magnetic
- magnetic head
- layer formed
- antistripping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000007885 magnetic separation Methods 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 793
- 239000010936 titanium Substances 0.000 claims description 127
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 98
- 239000011651 chromium Substances 0.000 claims description 94
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 76
- 239000000758 substrate Substances 0.000 claims description 57
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 55
- 229910052719 titanium Inorganic materials 0.000 claims description 55
- 229910052715 tantalum Inorganic materials 0.000 claims description 42
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 42
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 39
- 229910052804 chromium Inorganic materials 0.000 claims description 39
- 238000007747 plating Methods 0.000 claims description 31
- 239000002356 single layer Substances 0.000 claims description 31
- 239000003795 chemical substances by application Substances 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 24
- 229910052759 nickel Inorganic materials 0.000 claims description 23
- XBCSKPOWJATIFC-UHFFFAOYSA-N cobalt iron nickel Chemical compound [Fe][Ni][Fe][Co] XBCSKPOWJATIFC-UHFFFAOYSA-N 0.000 claims description 21
- 238000009713 electroplating Methods 0.000 claims description 18
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 18
- 239000010941 cobalt Substances 0.000 claims description 17
- 229910017052 cobalt Inorganic materials 0.000 claims description 17
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 17
- 238000003860 storage Methods 0.000 claims description 16
- 239000000956 alloy Substances 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 14
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 claims description 8
- 239000010955 niobium Substances 0.000 claims description 7
- ZDZZPLGHBXACDA-UHFFFAOYSA-N [B].[Fe].[Co] Chemical compound [B].[Fe].[Co] ZDZZPLGHBXACDA-UHFFFAOYSA-N 0.000 claims description 6
- OBLMUVZPDITTKB-UHFFFAOYSA-N [Fe].[Co].[Cu] Chemical compound [Fe].[Co].[Cu] OBLMUVZPDITTKB-UHFFFAOYSA-N 0.000 claims description 6
- ZMXPKUWNBXIACW-UHFFFAOYSA-N [Fe].[Co].[Mo] Chemical compound [Fe].[Co].[Mo] ZMXPKUWNBXIACW-UHFFFAOYSA-N 0.000 claims description 6
- 239000000696 magnetic material Substances 0.000 claims description 5
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 102
- 230000035882 stress Effects 0.000 description 67
- 230000000694 effects Effects 0.000 description 49
- 239000010949 copper Substances 0.000 description 16
- 230000001939 inductive effect Effects 0.000 description 16
- 239000000463 material Substances 0.000 description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 13
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 9
- 230000006872 improvement Effects 0.000 description 7
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 7
- 229940081974 saccharin Drugs 0.000 description 7
- 235000019204 saccharin Nutrition 0.000 description 7
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 7
- 229910052593 corundum Inorganic materials 0.000 description 6
- 230000009429 distress Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000005415 magnetization Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 229910001004 magnetic alloy Inorganic materials 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 241001676573 Minium Species 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- GUBSQCSIIDQXLB-UHFFFAOYSA-N cobalt platinum Chemical compound [Co].[Pt].[Pt].[Pt] GUBSQCSIIDQXLB-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- 101000606504 Drosophila melanogaster Tyrosine-protein kinase-like otk Proteins 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- ZGWQKLYPIPNASE-UHFFFAOYSA-N [Co].[Zr].[Ta] Chemical compound [Co].[Zr].[Ta] ZGWQKLYPIPNASE-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
- G11B5/3133—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
- G11B5/3133—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
- G11B5/314—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure where the layers are extra layers normally not provided in the transducing structure, e.g. optical layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/3116—Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
- G11B5/3143—Disposition of layers including additional layers for improving the electromagnetic transducing properties of the basic structure, e.g. for flux coupling, guiding or shielding
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/40—Protective measures on heads, e.g. against excessive temperature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
- Y10T29/49043—Depositing magnetic layer or coating
- Y10T29/49044—Plural magnetic deposition layers
Definitions
- This invention relates to a magnetic head for recording information on a magnetic recording medium, to a method of manufacturing the magnetic head, and to a magnetic storage unit using the magnetic head.
- JP-A 9-138930 provides a magnetic recording medium to obtain high magnetic characteristics and to improve adhesion property between a substrate and a base layer.
- first base layers, second base layers, magnetic layers and lubricant layers are successively formed on a substrate.
- the first base layers formed near the substrate have higher specific heat than that of the second base layers deposited far from the substrate.
- the temperature in orientation controlling layers and magnetic layers can be enough raised without increasing the temperature in the inside and surface of the substrate so much.
- adhesion property between the first base layers and the substrate can be improved, which prevents peeling of the first base layers.
- the magnetic storage units may be a magnetic disk drive.
- data is written and read by thin film magnetic transducers called “magnetic heads” which are supported over a surface of the magnetic recording medium or disk while it is rotated at a high speed.
- the magnetic head are supported by a thin cushion of air (an “air bearing”) produced by the disk's high, rotational speed.
- MR magnetoresistive
- the MR head is used as a merged MR head which employs the MR head and an inductive (ID) head for writing in combination.
- ID inductive
- Such as a merged MR head is disclosed, for example, in U.S. Pat. No. 5,438,747, Japanese Unexamined Patent Publication of Tokkai No. Hei 8-212,512 (or JP-A 8-212512), and Japanese Granted Patent Publication of No. 2,821,456 (or JP-B 2821456) which corresponds to U.S. patent application Ser. No. 09/108,252).
- U.S. Pat. No. 5,439,747 provides a merged MR head having vertically aligned sidewalls so as to minimize side-fringing and improve off-track performance.
- a thin film merged MR head mounted on a slider, is supported above a surface of the magnetic recording disk by a thin layer of air called an “air bearing”.
- the merged MR head includes an MR read head and an IR write head.
- the bottom surface of the slider and the merged MR head are in the plane of an air bearing surface (ABS) of the slider.
- the MR read head includes a magnetoresistive element MR which is sandwiched between first and second gap layers, the gap layers in turn being sandwiched between first and second shield layers.
- the first and second gap layers are collectively called a magnetic separation layer.
- the second shield layer of the MR read head also serves as the bottom pole piece for the IR write head.
- the bottom pole piece is called a first or lower magnetic layer.
- the IR write head has a pole tip region which is located between the air bearing surface (ABS) and a zero throat level and a yoke or back region which extends back from the zero throat level to and including a back gap.
- the IR write head includes the bottom pole piece and a top pole piece.
- the top pole piece is called a second or upper magnetic layer.
- the bottom pole piece comprises the second shield layer of the MR read head.
- Each pole piece also has a back layer portion which is located in the back region, the back layer portions of the pole pieces being magnetically connected at the back gap (BG).
- the bottom pole piece includes a pole tip structure which is located in the pole tip region between the ABS and the zero throat level.
- This pole tip structure includes a bottom pole tip element and a top pole tip element.
- the top pole piece includes a pole tip structure which is located in the pole tip region between the ABS and the zero throat level.
- This pole tip structure includes a top pole tip element.
- the pole tip elements are integrally formed from second shield of the MR read head.
- a pole gap layer (G) is sandwiched between the pole tip elements.
- JP-A 8-212512 discloses a magnetic head for a high recording density in a high-frequency region.
- JP-A 8-212512 discloses a recording and reproducing separated type head which comprises an inductive (IR) write head, a magnetoresistive (MR) read head, and a shield member for preventing the MR read head from being confused due to a leakage magnetic field.
- the MR read head comprises a lower shield layer formed on a substrate, a magnetoresistance effect layer, electrodes, and an upper shield layer.
- the IR write head comprises a lower magnetic layer, a write coil, and an upper magnetic layer.
- JP-B 2821456 discloses a merged MR head which comprises a MR read head and an IR write head.
- the IR write head comprises a lower magnetic layer, an insulating layer formed on the lower magnetic layer, a write coil enclosed with the insulating layer, and an upper magnetic layer formed on the insulating layer.
- the write coil is a patterned conductive layer.
- the MR read head comprises a lower shield layer, a gap layer formed on the lower shield layer, a magneto-resistance effect element sandwiched in the gap layer at one end thereof, an upper shield layer formed on the gap layer.
- the lower magnetic layer in the upper shield layer itself.
- the GMR read head uses a GMR effect which is capable of realizing a drastic high output in comparison with the MR read head.
- the GMR read head generally uses a spin valve effect.
- the “spin valve effect” is a phenomenon where a variation of resistance corresponds to a cosine between magnetic directions of two adjacent magnetic layers and thereby a large variation of resistance is obtained by a small operational magnetic field.
- Such a GMR read head using the spin valve effect is disclosed, for example, in Japanese Unexamined Patent Publications of Tokkai No. Hei 10-162,322 (or JP-A 10-162322) and Tokkai No. Hei 11-16,120 (or JP-A 12-16120).
- JP-A 10-162322 provides a merged GMR head that realizes simultaneously the magnetizing direction of the magnetization fixing, layer of a spin valve element and the magnetic anisotropic direction of a magnetic shield or a recording magnetic pole, and that can secure a stable operation of a magnetoresistence effect (MR) read head part and an indudtive (ID) write head part.
- the merged GMR head disclosed in JP-A 10-162,322 is equipped with an MR read head part having a reproducing function and an ID write head part recording prescribed information on a magnetic recording medium with a magnetic gap part.
- An MR element is constituted of a center area and end areas. The center area consists of spin valve elements and senses a media magnetic field.
- the end areas supply a bias magnetic field and an electric current.
- the other magnetic pole of the ID write head part is constituted of two kinds of laminated magnetic films having a different degree of saturation magnetization.
- the saturation magnetization of the magnetic film close to a magnetic gap inside each magnetic film is set to be larger than that of the magnetic film away from the magnetic gap.
- JP-A 11-16120 provides a magnetic domain structure which may be optimized even without the execution of the head treatment.
- JP-A 11-16120 discloses a recording and reproducing separated-type head using a thin film magnetic head.
- the recording and reproducing separated-type head comprises a reproducing or read head and a recording or write head.
- the reproducing head comprises a magnetoresistence effect film which is sandwiched between first and second shield layers.
- the second shield layer serves as a lower magnetic pole of the recording head.
- the recording head comprises the lower magnetic pole, a shield layer sandwiching a coil, and an upper magnetic pole.
- the magnetoresistence effect film is a spin valve film.
- the GMR read head is practically used at a high-density recording area having a recording density of 3 gigabits/inch 2 or more.
- a recording area having a recording density less than 3 gigabits/inch 2 it is possible to sufficiently cover by a conventional MR head using magnetic anisotropy. That is, a practically significant GM read head realizes a high-density recording and reproducing of 3 gigabits/inch 2 or more.
- a magnetic storage apparatus constructed using the GMR head is a high-density recording and reproducing apparatus of 3 gigabits/inch 2 or more.
- the ID write head carrying a recording function to a magnetic recording medium an improvement of a high-density recording performance is always requested with development of the GMR read head.
- a high coercive force to the magnetic recording medium is indispensable to carry out a high-density recording. This is to minimize a transition length of a magnetizing recorded in the magnetic recording medium with improvement of a recording density and to stably hold the magnetizing although a length of the magnetizing per one bit is shortened.
- development for the ID write head to enlarge a recording magnetic field is energetically advanced so as to record the magnetic recording medium of a high coercive force which is suitable for the high-density recording.
- a magnetic material is formed by plating.
- the plating it is possible to obtain a desired pattern by forming a photo-resist frame where a shape of magnetic poles (first and second magnetic layers) is preliminarily bored and by growing a plating layer within the photo-resist frame.
- the first and the second magnetic layers are called lower and upper magnetic layers, respectively.
- this method presently becomes a standard manufacturing method of a thin-film magnetic head.
- JP-A 11-16120 discloses a two-layered film comprising a nickel-iron (NiFe) alloy as an essential element.
- the two-layered film consists of a first magnetic sub-layer having a high saturation magnetic flux density and a second magnetic sub-layer having a low magnetostriction constant.
- the first and the second magnetic sub-layers are formed by changing a current density by using a flame plating method on an insulating film.
- U.S. Pat. No. 4,661,216 discloses an electoplating bath composition for electroplating a coating of a cobalt-nickel-iron (CoNiFe) alloy with low coercivity, high saturation magnetization (4 ⁇ Ms), and 0 or slightly negative magnetization ( ⁇ s) for use in thin film heads for reading and writing.
- the CoNiFe electroplating bath composition disclosed in U.S. Pat. No. 4,661,216 includes a stress reliving-agent such as saccharin.
- JP-A 6-346202 discloses a soft magnetic alloy having high Bs, low Hc, and high ⁇ .
- essential components of this soft magnetic alloy are constituted of iron (Fe), cobalt (Co), and nickel (Ni).
- the soft magnetic alloy is substantially constituted of a face-centered cubic crystal single phase.
- I(200)/I(111) ⁇ 0.25 is regulated.
- the absolute value of the saturation magnetostrictoin value ( ⁇ s) is regulated to 5 ⁇ 10 ⁇ 6 or below. In this way, the ⁇ s can substantially be regulated to zero even in the compositional range by which high Bs can be obtained.
- the above-mentioned JP-B 2821456 also discloses a soft magnetic film suitable for the first and the second magnetic layer.
- the soft magnetic film is a Co—Ni—Fe plating film formed with a plating bath including no addition agent such as saccharin to obtain a pure film having a sulfur content of 0.1% by weight or less.
- Such a soft magnetic film has a magnetostrictive constant reduced up to a practical level, an extremely high saturation magnetic flux density (Bs) of 1.9-2.2 T, and an extremely small coercive force of 199 A/m or less.
- the soft magnetic film is called a high-Bs soft magnetic film.
- the present inventors discovered that stripping or the like occur because the high-Bs soft magnetic film has a large stress of about 200 MPa and that the high-Bs soft magnetic film has an enlarged adhere force and a reduced stress by inserting a non-magnetic layer under the high-Bs soft magnetic film. This invention is made based on this knowledge.
- this invention improves a magnetic head comprising a substrate-having a principal surface, a first magnetic layer formed on the principal surface of the substrate, a recording gap layer formed on the first magnetic layer, an insulating layer formed on the recording gap layer, a write coil enclosed with and insulated by the insulating layer, and a second magnetic layer.
- a first antistripping layer is provided under the first magnetic layer and/or that a second antistripping layer is provided under the second magnetic layer.
- the first antistripping layer may comprise a first conductive layer formed under the first magnetic layer and a first non-magnetic layer formed under the first conductive layer.
- the second antistripping layer may comprise a second conductive layer formed under the second magnetic layer and a second non-magnetic layer formed under the second conductive layer.
- the conductive layer serves as an electrode on forming the magnetic layer by electroplating.
- the non-magnetic layer may preferably comprise a lamina made of a non-magnetic material (metal) of titanium (Ti) because of large adhesion.
- the non-magnetic layer may comprise a lamina made of metal selected from the group consisting essentially of tantalum (Ta), chromium (Cr), yttrium (Y), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), molybdenum (Mo), and tungsten (W).
- the first non-magnetic layer may preferably have a thickness between 2 nm and 10 nm, both inclusive and the second non-magnetic layer may preferably have a thickness between 10 nm and 290 nm, both inclusive.
- the non-magnetic layer is made of tantalum, the first non-magnetic layer may preferably have a thickness between 1.5 nm and 10 nm, both inclusive and the second non-magnetic layer may preferably have a thickness between 8 nm and 290 nm, both inclusive.
- the first non-magnetic layer may preferably have a thickness between 2.5 nm and 10 nm, both inclusive and the second non-magnetic layer may preferably have a thickness between 12 nm and 290 nm, both inclusive. This reason will be later described.
- the non-magnetic layer may desirably comprise a lamina made of metal having a tensile stress.
- the magnetic layer may comprise a single-layer structure of essential elements of cobalt (Co), nickel (Ni), andiron (Fe) or may comprise a laminated structure of a first magnetic sub-layer of essential elements of cobalt (Co), nickel (Ni), and iron (Fe) and a second magnetic sub-layer of essential elements of nickel (Ni) and iron (Fe).
- the first magnetic sub-layer is disposed near to the recording gap layer.
- the magnetic layer (first magnetic sub-layer) of the essential elements of cobalt (Co), nickel (Ni), and iron (Fe) may preferably have a crystal structure selected from the group consisting of a face-centered cubic (fcc) structure, a body-centered cubic (bcc) structure, and a mixed crystal with a face-centered cubic (fcc) structure and a body-centered cubic (bcc) structure and may preferably have a crystal particle diameter which is not more than 20 nm. This is because such a magnetic layer becomes a high-Bs soft magnetic film.
- the magnetic layer may desirably comprise a lamina selected from the group consisting essentially of cobalt-iron-nickel (CoFeNi), cobalt-iron-copper (CoFeCu), cobalt-iron-molybdenum (CoFeMo), cobalt-iron-boron (CoFeB), and cobalt-iron (CoFe).
- the lamina may comprise alloy or mixture.
- the lamina may comprise one selected from a single-layer film and a multi-layer film.
- the mixture further may comprise an additional alloy consisting essentially of nickel-iron (NiFe).
- a combination of the insulating layer and the write coil may be made by successively laminating a first insulating layer, the write coil, and a second insulating layer, a periphery end of the second insulating layer on a side of an air bearing surface (ABS) may be close to the air bearing surface than a periphery end of the first insulating layer.
- ABS air bearing surface
- FIG. 1 is an air bearing surface (ABS) view of a conventional magnetic head
- FIG. 2 is a vertical sectional view taken along the lines II-II of FIG. 1 :
- FIG. 3 is an air bearing surface (ABS) view of a magnetic head according to a first embodiment of this invention
- FIG. 4 is a vertical sectional view taken along the lines IV-IV of FIG. 3 ;
- FIG. 5 is a perspective view of a magnetic head according to this invention.
- FIG. 6 is a block diagram showing the magnetic storage unit on which the magnetic head illustrated in FIG. 5 is mounted;
- FIG. 7 is an air bearing surface (ABS) view of a magnetic head according to a second embodiment of this invention:
- FIG. 8 is a vertical sectional view taken along the lines VIII-VIII of Fig;
- FIG. 9 is an air bearing surface (ABS) view of a magnetic head according to a third embodiment of this invention.
- FIG. 10 is a vertical sectional view taken along the lines X-X of FIG. 9 .
- FIG. 1 is an air bearing surface (ABS) view of the conventional magnetic head.
- FIG. 2 is a vertical sectional view taken along the lines II-II of FIG. 1 .
- the illustrated magnetic head is a merged GMR bead which comprises a giant magnetoresistence (GMR) read head and an inductive (ID) write head. Description will be first directed to the GMR read head and will be subsequently directed to the ID write head.
- GMR giant magnetoresistence
- ID inductive
- the magnetic head comprises a substrate 10 having a principal surface 10 a .
- the substrate 10 comprises a ceramic substrate 11 (which is omitted in FIG. 1 ) serving as a slider, a first or lower magnetic shield layer 12 formed on the ceramic substrate 11 , a magnetic separation layer 13 formed on the first magnetic shield layer 12 , and a GMR element 14 sandwiched in the magnetic separation layer 13 .
- a second magnetic shield layer 15 doubles as a first or lower magnetic layer 16 of the IR write head.
- a combination of the first magnetic shield layer 12 , the magnetic separation layer 13 , the GM element 14 , and the second magnetic shield layer 15 serves as the GMR read head.
- the GMR element 14 comprises a center area 141 and end areas 142 which are disposed in both ends of the center area 141 .
- the center area 141 is made of a spin valve laminated structure for generating a GMR effect.
- the end areas 142 is for supplying an electric current and a bias magnetic field.
- the ID read head comprises the first or lower magnetic layer 16 formed on the principal surface 10 a of the substrate 10 , a recording gap layer 17 , a first insulating layer 18 formed on the recording gap layer 17 except for a pole tip region, a write coil 19 formed on the first insulating layer 19 , a second insulating layer 20 formed on the first insulating layer 18 so as to cover the write coil 19 ′, and a second or upper magnetic layer 21 formed on the pole chip region of the recording gap layer 17 and on the first and the second insulating layers 18 and 20 . That is, the write coil 19 is enclosed with and insulated by a combination of the first and the second insulating layers 18 and 20 . With this structure, information is recorded on a magnetic recording medium (not shown) by a magnetic flux which leaks in the magnetic gap layer 17 between the first and the second magnetic layers 16 and 21 magnetized by a magnetic field generated by the write coil 19 .
- a boundary face 181 between the first and the second insulating layers 18 and 20 is called a step cover (SC) film.
- Each of the first and the second magnetic layers 16 and 21 may be made of a high-Bs soft magnetic film which is disclosed in the above-mentioned JP-B 2821456.
- stripping occurs in the first and the second magnetic layers 16 and 21 .
- cracks occur in the step cover (SC) film or the boundary face 181 between the first and the second insulating layers 18 and 20 .
- cracks occur in a frame resist on forming the high-Bs soft magnetic film, the plating film grows along the cracks, and then abnormality in shape occurs in the first and the second magnetic layers 16 and 21 .
- FIG. 3 is an air bearing surface (ABS) view of the magnetic head.
- FIG. 4 is a vertical sectional view taken along the lines IV-IV of FIG. 3 .
- similar components and part to those in FIGS. 1 and 2 are depicted by like reference numerals and description of such components and parts will be omitted.
- the illustrated magnetic head is a merged GMR head which comprises a giant magnetoresistence (GMR) read head and an inductive (ID) write head.
- GMR giant magnetoresistence
- ID inductive
- the magnetic head comprises the ceramic substrate 11 serving as the slider.
- the ceramic substrate 11 is made of complex or composite ceramic consisting of alumina (Al 2 O 3 ) and titanium carbide.
- the GMR read head having a reproducing function is formed on the ceramic substrate 11 .
- the GRM read head comprises the first magnetic shield layer 12 , the second magnetic shield layer 15 , the magnetic separation layer 13 , and the GMR element 14 .
- the first magnetic shield layer 12 is made of a patterned cobalt-zirconium-tantalum (CoZrTa) film.
- the second magnetic shielding layer 15 is made of a nickel-iron (NiFe) film which contains about 80% by weight of nickel (Ni).
- the magnetic separation layer 13 is made of alumina (Al 2 O 3 ).
- the first magnetic shield layer 12 has a thickness of 1 ⁇ m and the second magnetic shield layer 15 has a thickness of 3 ⁇ m.
- a gap of the first magnetic shield layer 12 and the second magnetic shield layer 15 is equal to 0.13 ⁇ m.
- the GMR element 14 comprises the center area 141 and the end areas 142 which are disposed in both ends of the center area 141 .
- the center area 141 is for sensing a magnetic field from a magnetic recording medium (not shown) while the end areas 142 is for supplying the center area 141 with an electric current and a bias magnetic field.
- the center area 141 is made of a laminated structure having a GMR effect which is generally called a spin valve effect.
- the center area 141 comprises the laminated structure consisting of an undercoating zirconium (Zr) film having a thickness of about 3 nm, a platinum-manganese (PtMn) film having a thickness of about 20 nm, a cobalt-iron (CoFe) film having a thickness of about 2 nm, a copper (Cu) film having a thickness of about 2.1 nm, a cobalt-iron (CoFe) film having a thickness of about 0.5 nm, a nickel-iron (NiFe) film having a thickness of about 2 nm, and a zirconium (Zr) film having a thickness of about 3 nm in this order.
- Zr zirconium
- the center area 141 has a width of 0.5 ⁇ m which defines a reproducing track width.
- Each end area 142 has a laminated structure which comprises a permanent magnet film and an electrode film.
- the permanent magnet film is, for example, a cobalt-platinum (CoPt) film having a thickness of about 20 nm.
- the electrode film is, for example, a gold (Au) film having a thickness of about 50 nm.
- the ID write head is formed on the GMR read head. Specifically, on the magnetic separation layer 13 , the first magnetic layer 16 is formed through a first non-magnetic layer 22 and a first conductive layer 23 . The first-magnetic layer 16 doubles the second magnetic shield layer 15 .
- the first non-magnetic layer 22 is made of titanium (Ti) and has a thickness of about 3 nm.
- the first conductive layer 23 is made of nickel-iron (NiFe) and has a thickness of about 10 nm.
- the first magnetic layer 16 has a laminated structure which comprises a nickel-iron (NiFe) film having a thickness of about 2.0 ⁇ m and a cobalt-nickel-iron (CoNiFe) film having a thickness of about 0.5 ⁇ m and including no stress relieving agent such as saccharin.
- NiFe nickel-iron
- CoNiFe cobalt-nickel-iron
- the first magnetic layer 16 is formed on the magnetic separation layer 13 through the first non-magnetic layer 22 , it is possible to improve adhesion between the first magnetic layer 16 and the magnetic separation layer 13 . Accordingly, it is possible to prevent the first magnetic layer 16 from stripping caused by a stress in the cobalt-nickel-iron (CoNiFe) film which is a component of the first magnetic layer 16 .
- adhesion is good when a thickness of the first non-magnetic layer 22 is 2 nm or more, the thickness of the first non-magnetic layer 22 is limited to an upper limit of 10 nm because the reproducing gap length widens too if the thickness of the first non-magnetic layer 22 is more than 10 nm.
- a combination of the first non-magnetic layer 22 and the first conductive layer 23 serves as a first antistripping layer for preventing the first magnetic layer 16 from stripping.
- the ID write head comprises the second magnetic shield layer 15 as the first magnetic layer 16 , the recording gap layer 17 formed on the first magnetic layer 16 , and the first insulating layer 19 formed on the recording gap layer 17 except for a pole tip region.
- the first insulating layer 18 defines a zero throat height which is well known in the art.
- the recording gap layer 17 has a thickness of about 0.15 ⁇ m and is made of alumina (Al 2 O 3 ).
- the first insulating layer 19 consists of a photo-resist.
- the write coil 19 which consists of a copper (Cu) plating film.
- the second insulating layer 20 is formed on the first insulating layer 18 , the write coil 19 , and the recording gap layer except for an pole tip region so as to cover a peripheral part of the first insulating layer 18 .
- the write coil 19 is insulated by the second insulating layer 20 .
- the second insulating layer 20 consist of a photo-resist. With this structure, a boundary face 181 between the first insulating layer 18 and the second insulating layer 20 is not exposed to the side of the second magnetic layer 21 .
- the second magnetic layer 21 is formed through a second non-magnetic layer 24 and a second conductive layer 25 .
- the second non-magnetic layer 24 is made of titanium (Ti) and has a thickness of about 50 nm.
- the second conductive layer 25 is made of nickel-iron (NiFe) and has a thickness of about 50 nm.
- the second magnetic layer 21 comprises a laminated film which consists of the cobalt-nickel-iron (CoNiFe) film having a thickness of about 0.5 ⁇ m and a nickel-iron (NiFe) film having a thickness of about 2.8 ⁇ m.
- the second magnetic layer 21 exposes to an air bearing surface (ABS) which faces on a magnetic recording medium (not shown).
- ABS air bearing surface
- the second magnetic layer 21 is formed on the second insulating layer 20 through the second non-magnetic layer 24 , adhesion between the second magnetic layer 21 and the recording gap layer 17 and between the second magnetic layer 21 and the second insulating layer 20 improves and a stress of the cobalt-nickel-iron (CoNiFe) film in the second magnetic layer 21 decreases. Accordingly, it is possible to prevent the second magnetic layer 21 from stripping caused by the stress of the cobalt-nickel-iron (CoNiFe) which includes no stress relieving agent such as saccharin and which is a component of the second magnetic layer 21 . At any rate, a combination of the second non-magnetic layer 24 and the second conductive layer 25 serves as a second antistripping layer for preventing the second magnetic layer 21 from stripping.
- a thickness of 10 nm or more is required for the second nonmagnetic layer 24 to obtain adhesion between the second insulating layer 20 and the second magnetic layer 21 and to decrease the stress of the cobalt-nickel-iron (CoNiFe) film in the second magnetic layer 21 .
- the thickness b of 10 nm or more is required for the recording gap layer 17 to electrically separate the first magnetic layer 16 from the second magnetic layer 21 at the air bearing surface (ABS). Accordingly, to satisfy there conditions, the thickness c of the second non-magnetic layer 24 has an upper limit value of 290 nm.
- FIGS. 5 and 6 the description will proceed to a magnetic head according to this invention and a magnetic storage unit on which the magnetic head illustrated in FIG. 5 is mounted.
- FIG. 5 is a perspective view of the magnetic head according to this invention.
- FIG. 6 is a block diagram showing the magnetic storage unit on which the magnetic head illustrated in FIG. 5 is mounted.
- the magnetic head 30 comprises a slider 31 , electrodes 32 , and a recording and reproducing element 33 .
- the slider 31 corresponds to the ceramic substrate 11 illustrated in FIGS. 3 and 4 .
- the recording and reproducing element 33 corresponds to a combination of the first magnetic shielding layer 12 , the magnetic separation layer 13 , the GMR element 14 , the second magnetic shielding layer 15 (or the first magnetic layer 16 , the recording gap layer 17 , the first insulating layer 18 , the write coil 19 , the second insulating layer 20 , the second magnetic layer 21 , the first non-magnetic layer 22 , the first conductive layer 23 , the second non-magnetic layer 24 , and the second conductive layer 25 illustrated in FIGS. 3 and 4 .
- the magnetic storage unit 40 comprises the magnetic head 30 illustrated FIG. 5 , a magnetic recording medium 41 having a magnetic recording surface, and a spindle motor 32 for rotatably driving the magnetic recording medium 41 .
- the magnetic head 30 is mounted by a suspension member 43 and an arm 44 to face to the magnetic recording surface of the magnetic recording medium 41 .
- the magnetic head 30 is tracked on the magnetic recording medium 41 by a voice coil motor (VCM) 45 . That is, the voice coil motor 45 carries out positioning of the magnetic head 30 .
- VCM voice coil motor
- magnetic recording and reproducing operation is carried out by a signal which is supplied from a recording and reproducing channel 46 to the magnetic head 30 .
- the recording and reproducing channel 46 , the voice coil motor 45 , and the spindle motor 32 are controlled by a control unit 47 .
- the magnetic storage unit 40 having a recording density of about 10 gigabits/inch 2 or more when the magnetic recording medium 41 has a coercive force of 278600 A/m and when a magnetic distance between the magnetic recording medium 41 and the magnetic head 30 is equal to about 35 nm.
- FIG. 7 is an air bearing surface (ABS) view of the magnetic head.
- FIG. 8 is a vertical sectional view taken along the lines VIII-VIII of FIG. 7 .
- FIGS. 7 and 8 similar components and part to those in FIGS. 3 and 4 are depicted by like reference numerals and description of such components and parts will be omitted.
- the illustrated magnetic head is similar in structure and operation to the magnetic head illustrated in FIGS. 3 and 4 except that the second non-magnetic layer 24 and the second conductive layer 25 are omitted from the magnetic head illustrated in FIGS. 3 and 4 .
- the illustrated magnetic head is provided with the first non-magnetic layer 22 and the first conductive layer 23 alone. With this structure, it is possible to prevent the first magnetic layer 16 from stripping caused by a stress in the CoNiFe film which includes no stress relieving agent such as saccharin and which is a component of the first magnetic layer 16 .
- FIG. 9 is an air bearing surface (ABS) view of the magnetic head.
- FIG. 10 is a vertical sectional view taken along the lines X-X of FIG. 9 .
- similar components and part to those in FIGS. 3 and 4 are depicted by like reference numerals and description of such components and parts will be omitted.
- the illustrated magnetic head is similar in structure and operation to the magnetic head illustrated in FIGS. 3 and 4 except that the first non-magnetic layer 22 and the first conductive layer 23 are omitted from the magnetic head illustrated in FIGS. 3 and 4 .
- the illustrated magnetic head is provided with the second non-magnetic layer 24 and the second conductive layer 25 alone. With this structure, it is possible to prevent the second magnetic layer 21 from stripping caused by the stress of the CoNiFe which includes no stress relieving agent such as saccharin and which is a component of the second magnetic layer 21 .
- composition of material is represented on the basis of an atomic percent (at %) and a value put in parentheses represents a thickness of a layer, a film, or a lamina.
- a wrong occurrence resist effect by the first nonmagnetic layer 22 is examined in a case of using a two-layer film of nickel-iron (NiFe)/cobalt-iron-nickel (CoFeNi) as the first magnetic layer 16 .
- Tables 1, 2, and 3 show probability of occurrence of stripping in the first magnetic layer 16 , probability of occurrence of crack in the second insulating layer 20 , and probability of occurrence of shape anomaly in the first magnetic layer 16 in a case of manufacturing the magnetic head having structure illustrated in FIGS. 3 and 4 by using a lamina made of metal selected from titanium (Ti), tantalum (Ta), and chromium (Cr) as the first non-magnetic layer 22 and by changing thickness thereof.
- the first magnetic layer 16 doubling as the second magnetic shield layer 15 comprises the two-layer film (which laminates CoFeNi on NiFe) made of Ni 80 Fe 20 (1.0 ⁇ m)/CO 65 Fe 23 Ni 12 (1.0 ⁇ m) formed by plating with using no stress relaxation agent and the second magnetic layer 21 comprises a single-layer film made of Co 65 Fe 23 Ni 12 (1.4 ⁇ m) formed by plating with using no stress relaxation agent.
- the second non-magnetic layer 24 is made of titanium (Ti) and has a thickness of 30 nm. As result, wrong such as stripping caused by the second magnetic layer 21 , occurrence of crack, and shape anomaly are not occurred.
- Composition of each material described below is composition (at %) of a target for use in sputtering.
- the ceramic substrate 11 comprises a substrate made of alumina titanium carbide (Al 2 O 3 —TiC) having a thickness of 1.2 mm on which alumina (Al 2 O 3 ) is laminated by 3 ⁇ m.
- the first magnetic shield layer 12 is made of Co 89 Zr 4 Ta 4 Cr 3 (1 ⁇ m).
- a vertical bias grounding layer is made of chromium (Cr) (10 nm)
- a vertical bias is made of Co 74.5 Cr 10.5 Pt 15 (16 nm).
- the magnetic separation layer 15 is made of alumina (Al 2 O 3 ).
- the GM element 15 has a laminated structure consisting of tantalum (Ta) (3 nm), Pt 4 MnS 4 (20 nm), CogoFelo (3 nm), ruthenium (Ru) (0.7 nm), CogoFelo (3 nm), copper (Cu) (2.1 nm), Co 90 Fe 10 (0.5 nm), Ni 82 Fe 18 (1 nm), copper (Cu) (2 nm), and tantalum (Ta) (3 nm).
- the first conductive layer 23 is made of; Ni 80 Fe 20 (100 nm).
- the recording gap layer 17 is made of alumina (Al 2 O 3 ) (0.18 ⁇ m).
- the write coil 19 is made of copper (Cu) (1.8 ⁇ m).
- the second conductive layer 25 is made of Ni 80 Fe 20 (50 nm).
- the second insulating layer 20 comprises a resist.
- a chromium (Cr) layer As the first non-magnetic layer 22 , stripping caused by the first magnetic layer 16 , occurrence of crack, and shape anomaly occur at a large probability of 40% or more when the chromium (Cr) layer has a thickness of 2.0 nm or less.
- the Ca layer has a thickness of 2.5 nm or more, the probability of occurrence of respective wrongs is lowered to some ten % or less and the wrong occurrence resist effect caused by the first non-magnetic layer 22 made of chromium (Cr) presents.
- Table 4 shows thickness of the first non-magnetic layer 22 made of titanium (Ti) having the thinnest thickness where each of the probability of occurrence of stripping in the first magnetic layer 16 , the probability of occurrence of crack in the second insulating layer 20 , and the probability of occurrence of shape anomaly in the first magnetic layer 16 in a case of using a titanium (Ti) layer as the first non-magnetic layer 22 .
- the first magnetic layer 16 doubling as the second magnetic shield layer 15 comprises one of three types of the single-layer film made of cobalt-iron-nickel (CoFeNi) having different composition (Co 65 Fe 23 Ni 12 , Co 43 Fe 16 Ni 41 , Co 80 Fe 9 Ni 11 ) having a thickness of 2 ⁇ m each of which formed by plating with using no stress relaxation agent.
- the second magnetic layer 21 comprises a single-layer film made of Co 65 Fe 23 Ni 12 (1.4 ⁇ m) formed by plating with using no stress relaxation agent.
- the second non-magnetic layer 24 is made of titanium (Ti) having a thickness of 30 nm in order to resist occurrence of wrong caused by the second magnetic layer 24 .
- the thickness of the first non-magnetic layer 22 made of titanium (Ti) having the thinnest thickness where each of the probability of occurrence of stripping in the first magnetic layer 16 , the probability of occurrence of crack in the second insulating layer 20 , and the probability of occurrence of shape anomaly in the first magnetic layer 16 is less than 20% is 2.0 nm in the case of any composition. Difference is not present in the wrong occurrence resist effect caused by the first non-magnetic layer 22 made of titanium (Ti) although the composition of the alloy made of cobalt-iron-nickel (CoFeNi) differs from each other.
- Tables 5, 6, and 7 show probability of occurrence of stripping in the second magnetic layer 21 , probability of occurrence of crack in the second insulating layer 20 , and probability of occurrence of shape anomaly in the second magnetic layer 21 in a case of manufacturing the magnetic head having structure illustrated in FIGS. 3 and 4 by using a lambda made of metal selected from titaniu (Ti), tantalum (Ta), and chromium (Cr) as the second non-magnetic layer 24 and by changing thickness thereof.
- a lambda made of metal selected from titaniu (Ti), tantalum (Ta), and chromium (Cr) as the second non-magnetic layer 24 and by changing thickness thereof.
- the first magnetic layer 16 doubling as the second magnetic shield layer 15 comprises a single-layer film made of Co65Fe 23 Ni 12 (2.0 ⁇ m) formed by plating with using no stress relaxation agent and the second magnetic layer 21 comprises a two-layer film made of Co 65 Fe 23 Ni 12 (0.7 ⁇ m)/Ni 80 Fe 20 (0.7 ⁇ m) formed by plating with using no stress relaxation agent.
- the first non-magnetic layer 22 is made of titanium (Ti) having a thickness of 5 nm.
- a chromium (Cr) layer As the second non-magnetic layer 24 , stripping caused by the second magnetic layer 21 , occurrence of crack, and shape anomaly occur at a large probability of 30% or more when the chromium (Cr) layer has a thickness of 10.0 nm or less.
- the chromium (Cr) layer has a thickness of 12.0 nm or more, the probability of occurrence of respective wrongs is lowered to some ten % or less and the wrong occurrence resist effect caused by the second non-magnetic layer 24 made of chromium (Cr) presents.
- Table 8 shows thickness of the second non-magnetic layer 24 made of titanium (Ti) having the thinnest thickness where each of the probability of occurrence of stripping in the second magnetic layer 21 , the probability of occurrence of crack in the second insulating layer 20 , and the probability of occurrence of shape anomaly in the second magnetic layer 21 in a case of using a titanium (Ti) layer as the second non-magnetic layer 24 .
- the second magnetic layer 16 comprises one of three types of the single-layer film made of cobalt-iron-nickel (CoFeNi) having different composition (Co 65 Fe 23 Ni 12 , Co 43 Fe 16 Ni 41 , Co 80 Fe 9 Ni 11 ) having a thickness of 1.2 ⁇ m each of which formed by plating with using no stress relaxation agent.
- the first magnetic layer 16 doubling as the second magnetic shield layer 15 comprises a single-layer film made of Co 65 Fe 23 Ni 12 (2.0 ⁇ m) formed by plating with using no stress relaxation agent.
- the first non-magnetic layer 22 is made of titanium (Ti) having a thickness of 5 nm.
- the thickness of the second non-magnetic layer 24 made of titanium (Ti) having the thinnest thickness where each of the probability of occurrence of stripping in the second magnetic layer 21 , the probability of occurrence of crack in the second insulating layer 20 , and the probability of occurrence of shape anomaly in the second magnetic layer 21 is less than 20% is 10.0 nm in the case of any composition. Difference is not present in the wrong occurrence resist effect caused by the second non-magnetic layer 24 made of titanium (Ti) although the composition of the alloy made of cobalt-iron-nickel (CoFeNi) differs from each other.
- Tables 9, 10, 11, and 12 show probability of occurrence of stripping in the first magnetic layer 16 , probability of occurrence of crack in the second insulating layer 20 , and probability of occurrence of shape anomaly in the first magnetic layer 16 in a case of manufacturing the magnetic head having structure illustrated in FIGS.
- the second magnetic layer 21 comprises a single-layer film made of Co 65 Fe 23 Ni 12 (1.4 ⁇ m) formed by plating with using no stress relaxation agent.
- the second non-magnetic layer 24 is made of titanium (Ti) having a thickness of 30 nm. As result, wrong such as stripping caused by the second magnetic layer 21 , occurrence of crack, and shape anomaly is not occurred.
- Ti titanium
- As each element of the magnetic head similar ones used in those to obtain data in Tables 1 to 3 are used.
- the probability of occurrence of wrong has 50% to 70% level in a case of using no fist non-magnetic layer 22 and is high probability of occurrence of wrong although it is not high in comparison with a case of the above-mentioned two-layer film made of nickel-iron (NiFe)/cobalt-iron-nickel (CoFeNi) or the above-mentioned single-layer film made of cobalt-nickel-iron (CoNiFe).
- the probability of occurrence of wrong is lowered to several % or less.
- the first non-magnetic layer 22 made of metal selected from titanium (Ti), tantalum (Ta), and chromium (Cr) has the wrong occurrence resist effect not only in the two-layer film made of nickel-iron (NiFe)/cobalt-iron-nickel (CoFeNi) or the single-layer film made of cobalt-iron-nickel (CoFeNi) but also in using any one of cobalt-iron-copper (CoFeCu), cobalt-iron-molybdenum (CoFeMo), cobalt-iron-boron (CoFeB), and cobalt-iron (CoFe).
- CoFeCu cobalt-iron-copper
- CoFeMo cobalt-iron-molybdenum
- CoFeB cobalt-iron-boron
- CoFe cobalt-iron
- NiFe nickel-iron
- CoFeCu cobalt-iron-copper
- CoFeMo cobalt-iron-molybdenum
- CoFeB cobalt-iron-boron
- CoFe cobalt-iron
- Tables 13, 14, 15, and 16 show probability of occurrence of stripping in the second magnetic layer 21 , probability of occurrence of crack in the second insulating layer 20 , and probability of occurrence of shape anomaly in the second magnetic layer 21 in a case of manufacturing the magnetic head having structure illustrated in FIGS.
- the first magnetic layer 16 comprises a single-layer film made of Co 65 Fe 23 Ni 12 (2.0 ⁇ m) formed by plating with using no stress relaxation agent.
- the first non-magnetic layer 22 made of titanium (Ti) having a thickness of 5 nm. As result, wrong such as stripping caused by the first magnetic layer 16 , occurrence of crack, and shape anomaly is not occurred.
- the first non-magnetic layer 22 made of titanium (Ti) having a thickness of 5 nm. As result, wrong such as stripping caused by the first magnetic layer 16 , occurrence of crack, and shape anomaly is not occurred.
- similar ones used in those to obtain data in Tables 1 to 3 are used.
- the probability of occurrence of wrong has 50% to 70% level in a case of using no second non-magnetic layer 24 and is high probability of occurrence of wrong although it is not high in comparison with a case of the above-mentioned two-layer film made of nickel-iron (NiFe)/cobalt-iron-nickel (CoFeNi) or the above-mentioned single-layer film made of cobalt-nickel-iron (CoNiFe).
- the second non-magnetic layer 24 a lamina made of metal selected from titanium (Ti), tantalum (Ta), and chromium (Cr) of a thickness of 30 nm in any case, the probability of occurrence of wrong is lowered to several % or less.
- the second non-magnetic layer 24 is made of one selected from titanium (Ti), tantalum (Ta), and chromium (Cr) has the wrong occurrence resist effect not only in the two-layer film made of nickel-iron (NiFe)/cobalt-iron-nickel (CoFeNi) or the single-layer film made of cobalt-iron-nickel (CoFeNi) but also in using any one of cobalt-iron-copper (CoFeCu), cobalt-iron-molybdenum (CoFeMo), cobalt-iron-boron (CoFeB), and cobalt-iron (CoFe).
- Ti nickel-iron
- CoFeNi cobalt-iron-nickel
- CoFeNi cobalt-iron-nickel
- CoFeCu cobalt-iron-copper
- CoFeMo cobalt-iron-molybdenum
- CoFeB cobalt-iron-boron
- CoFe cobal
- NiFe nickel-iron
- CoFeCu cobalt-iron-copper
- CoFeMo cobalt-iron-molybdenum
- CoFeB cobalt-iron-boron
- CoFe cobalt-iron
- a first effect is an effect to improve adhesion between the magnetic separation layer 13 and the first conductive layer 23 or between the second insulating layer 20 and the second conductive layer 25 because the first non-magnetic layer 22 lies between the magnetic separation layer 13 and the first conductive layer 23 or the second non-magnetic layer 24 lies between the second insulating layer 20 and the second conductive layer 25 .
- a second effect is an effect to reduce stress in the first conductive layer 23 /the first magnetic layer 16 or in the second conductive layer 25 /the second magnetic layer 21 because the first non-magnetic layer 22 is adjacent to the first conductive layer 23 /the first magnetic layer 16 or the second nonmagnetic layer 24 is adjacent to the second conductive layer 25 /the second magnetic layer 21 .
- a lamina made of metal selected from titanium (Ti), tantalum (Ta), and chromium (Cr) having a thickness of 10 nm is formed on a glass substrate as a non-magnetic layer by sputtering, a layer made of Ni 80 Fe 20 having a thickness of 100 nm is formed on the non-magnetic layer as a conductive layer by sputtering, and a layer made of Co 65 Fe 23 Ni 12 having a thickness of 2 ⁇ m is formed on the conductive layer as a magnetic layer by plating using a stress relaxation agent.
- adhesion is measured by using an acoustic emission method.
- the acoustic emission method is a method comprising the steps of applying warp stress to a substrate on which a stress measured film is formed and of detecting, as adhesion, a stress at which separation occurs by detecting the separation of the film from the substrate by sound.
- the adhesion is herein defined as the stress when the separation occurs most frequently.
- the adhesion in this case is shown in Table 17. TABLE 17 ADHESION (GPa) No non-magnetic layer 9 Ti (10 nm) 58 Ta (10 nm) 62 Cr (10 nm) 41
- the adhesion In a case of using no non-magnetic layer, the adhesion is 9 GPa and is small. In comparison with this, in a case of using a lamina made of metal selected from titanium (Ti), tantalum (Ta), and chromium (Cr) as the nonmagnetic layer, the adhesion is drastically large. Among three types of the non-magnetic layer, the adhesion is about same level in titanium (Ti) and tantalum (Ta) and the adhesion in chromium (Cr) is smaller than that by little.
- a lamina made of metal selected from titanium (Ti), tantalum (Ta), and chromium (Cr) having a thickness of 10 nm is formed on a substrate having a known amount of warp as a non-magnetic layer by sputtering, a layer made of Ni 80 Fe 20 having a thickness of 100 nm is formed on the non-magnetic layer as a conductive layer by sputtering, and a layer made of Co 65 Fe 23 Ni 12 having a thickness of 0.3 ⁇ m is formed on the conductive layer as a magnetic layer by plating with no stress relaxation agent.
- Ti titanium
- Ta tantalum
- Cr chromium
- a sample with no non-magnetic layer is formed.
- a reason that the magnetic layer has a thin thickness to 0.3 ⁇ m which is different from an actual process is that separation of the magnetic immediately occurs in a case of forming no non-magnetic layer if a thickness of the magnetic layer is thick and it is therefore impossible to measure the adhesion of a compared sample.
- the interval stress is equal to 2560 MPa and is large.
- the internal stress is drastically decreased. It seems that titanium (Ti) and tantalum (Ta) have an effect so as to decrease the internal stress in a cobalt-iron-nickel (CoFeNi) plating layer formed thereon.
- the internal stress becomes small in order to titanium (Ti), tantalum (Ta), and chromium (Cr).
- titanium (Ti) and tantalum (Ta) have a smaller stress reduction effect in comparison with chromium (Cr)
- titanium (Ti) and tantalum (Ta) have a larger adhesion improvement effect in comparison with chromium (Cr) in the manner which is understood from Table 17.
- Cr chromium
- the present co-inventors considered that it seems that one of reasons for reduction of the stress in the magnetic layer by using a film made of one selected from titanium (Ti), tantalum (Ta), and chromium (Cr) as the non-magnetic layer may be an effect caused by addition of stresses in the non-magnetic layer, in the conductive layer, and in the magnetic layer.
- the present co-inventors measured stress in a single-layer film made of metal selected from titanium (Ti), tantalum (Ta), and chromium (Cr).
- Table 19 shows internal stress in the single-layer film made of metal selected from titanium (Ti), tantalum (Ta), and chromium (Cr) in a case where its thickness is equal to 50 nm.
- Ti titanium
- Ta tantalum
- Cr chromium
- the internal stress has a negative (minus) value. Accordingly, in a total of the non-magnetic layer, the conductive layer, and the magnetic layer, it is anticipated that a total stress value obtained by adding respective stress values may become smaller in each case than that in a case of no non-magnetic layer and matches with a tendency of the results shown in Table 18.
- While negative stress values in the single-layer film are, in descending order, tantalum (Ta), chromium (Cr), and titanium (Ti), namely, Ta>Cr>Ti, total stress values in the non-magnetic layer, the conductive layer, and the magnetic layer are, in descending order, titanium (Ti), tantalum (Ta), and chromium (Cr), namely, Ti>Ta>Cr.
- a material (metal) having the negative stress value has an effect on reduction of the total stress value as shown in data of Tables 18 and 19. Accordingly, the stress relaxation effect for the magnetic layer may be expected in a case of using, as the non-magnetic layer, a single-layer film made of a material (metal) having the negative stress although the material (metal) is a material (metal) except for titanium (Ti), tantalum (Ta), and chromium (Cr).
- the present co-inventors formed a single-layer film having a thickness of 50 nm on a glass substrate and measured stress of the single-layer film.
- the present co-inventors measured adhesion of the single-layer film having the thickness of 50 nm formed on the glass substrate using an acoustic emission method and obtained measured values shown in Table 20.
- Table 20 TABLE 20 TYPE OF INTERNAL STRESS MATERIAL (MPa) ADHESION (GPa) Y ⁇ 350 32 Zr ⁇ 320 33 Hf ⁇ 230 34 V ⁇ 390 38 Nb ⁇ 280 36 Mo ⁇ 370 31 W ⁇ 280 36 Mn ⁇ 220 2 Re ⁇ 150 1
- yttrium (Y), zirconium (Zr) hafnium (Hf), vanadium CV), niobium (Nb) molybdenum (Mo), and wolfram (tungsten) (W) have adhesion of a level of 30 GPa although its adhesion is not higher than that in titanium (Ti), tantalum (Ta), and chromium (Cr), they are likely candidates of the material (metal) for the first and the second non-magnetic layers 22 and 24 if they are excellent in corrosion resistance and in compatibility of a head manufacturing process.
- the magnetic layer (first magnetic sub-layer) comprising the essential elements of cobalt (Co) nickel (Ni), and iron (Fe) may have a crystal structure selected from the group consisting of a face-centered cubic (fcc) structure, a body-centered cubic (bcc) structure, and a mixed crystal with a face-centered cubic (fcc) structure and a body-centered cubic (bcc) structure.
- the magnetic layer (first magnetic sub-layer) comprising the essential elements of cobalt (Co), nickel (Ni), and iron (Fe) may have a crystal particle diameter which is not more than 20 nm.
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Abstract
By inserting a first antistripping layer comprising a first non-magnetic layer 22 and a first conductive layer 23 between a first magnetic layer 16 and a magnetic separation layer 13, adhesion between the first conductive layer 23 and the magnetic separation layer 13 is improved to prevent the first magnetic layer 16 from stripping. In addition, by inserting a second antistripping layer comprising a second non-magnetic layer 24 and a second conductive layer 25 between a second magnetic layer 21 and a magnetic gap layer 17, adhesion between the second conductive layer 24 and the magnetic gap layer 17 is improved to prevent the second magnetic layer 25 from stripping.
Description
- This is a continuation-in-part application of U.S. application Ser. No. 09/672,597, filed on Sep. 28, 2000, now abandoned.
- This invention relates to a magnetic head for recording information on a magnetic recording medium, to a method of manufacturing the magnetic head, and to a magnetic storage unit using the magnetic head.
- A magnetic recording medium is disclosed, for example, in Japanese Unexamined Patent Publication of Tokka: No. Hei 9-138,930 (or JP-A 9-138930). JP-A 9-138930 provides a magnetic recording medium to obtain high magnetic characteristics and to improve adhesion property between a substrate and a base layer. According to JP-A 9-138930, first base layers, second base layers, magnetic layers and lubricant layers are successively formed on a substrate. Among the base layers, the first base layers formed near the substrate have higher specific heat than that of the second base layers deposited far from the substrate. Thereby, the temperature in orientation controlling layers and magnetic layers can be enough raised without increasing the temperature in the inside and surface of the substrate so much. Thereby, adhesion property between the first base layers and the substrate can be improved, which prevents peeling of the first base layers.
- The magnetic storage units may be a magnetic disk drive. In the magnetic disk drive, data is written and read by thin film magnetic transducers called “magnetic heads” which are supported over a surface of the magnetic recording medium or disk while it is rotated at a high speed. The magnetic head are supported by a thin cushion of air (an “air bearing”) produced by the disk's high, rotational speed.
- With miniaturization and large-capacity in the magnetic storage unit, a volume per one bit recorded on the magnetic recording medium drastically becomes small. In the manner which is well known in the art, there is a magnetoresistive (MR) head to detect, as a large read output, a magnetic signal generated from a microscopic bit.
- Inasmuch as the MR head is exclusively used for reading, the MR head is used as a merged MR head which employs the MR head and an inductive (ID) head for writing in combination. Such as a merged MR head is disclosed, for example, in U.S. Pat. No. 5,438,747, Japanese Unexamined Patent Publication of Tokkai No. Hei 8-212,512 (or JP-A 8-212512), and Japanese Granted Patent Publication of No. 2,821,456 (or JP-B 2821456) which corresponds to U.S. patent application Ser. No. 09/108,252).
- U.S. Pat. No. 5,439,747 provides a merged MR head having vertically aligned sidewalls so as to minimize side-fringing and improve off-track performance. When a magnetic recording disk is rotated, a thin film merged MR head, mounted on a slider, is supported above a surface of the magnetic recording disk by a thin layer of air called an “air bearing”. The merged MR head includes an MR read head and an IR write head. The bottom surface of the slider and the merged MR head are in the plane of an air bearing surface (ABS) of the slider. The MR read head includes a magnetoresistive element MR which is sandwiched between first and second gap layers, the gap layers in turn being sandwiched between first and second shield layers. The first and second gap layers are collectively called a magnetic separation layer. In a merged MR head, the second shield layer of the MR read head also serves as the bottom pole piece for the IR write head. The bottom pole piece is called a first or lower magnetic layer. The IR write head has a pole tip region which is located between the air bearing surface (ABS) and a zero throat level and a yoke or back region which extends back from the zero throat level to and including a back gap. The IR write head includes the bottom pole piece and a top pole piece. The top pole piece is called a second or upper magnetic layer. The bottom pole piece comprises the second shield layer of the MR read head. Each pole piece also has a back layer portion which is located in the back region, the back layer portions of the pole pieces being magnetically connected at the back gap (BG). The bottom pole piece includes a pole tip structure which is located in the pole tip region between the ABS and the zero throat level. This pole tip structure includes a bottom pole tip element and a top pole tip element. The top pole piece includes a pole tip structure which is located in the pole tip region between the ABS and the zero throat level. This pole tip structure includes a top pole tip element. The pole tip elements are integrally formed from second shield of the MR read head. A pole gap layer (G) is sandwiched between the pole tip elements.
- JP-A 8-212512 discloses a magnetic head for a high recording density in a high-frequency region. Specifically, JP-A 8-212512 discloses a recording and reproducing separated type head which comprises an inductive (IR) write head, a magnetoresistive (MR) read head, and a shield member for preventing the MR read head from being confused due to a leakage magnetic field. The MR read head comprises a lower shield layer formed on a substrate, a magnetoresistance effect layer, electrodes, and an upper shield layer. The IR write head comprises a lower magnetic layer, a write coil, and an upper magnetic layer.
- JP-B 2821456 discloses a merged MR head which comprises a MR read head and an IR write head. The IR write head comprises a lower magnetic layer, an insulating layer formed on the lower magnetic layer, a write coil enclosed with the insulating layer, and an upper magnetic layer formed on the insulating layer. The write coil is a patterned conductive layer. The MR read head comprises a lower shield layer, a gap layer formed on the lower shield layer, a magneto-resistance effect element sandwiched in the gap layer at one end thereof, an upper shield layer formed on the gap layer. The lower magnetic layer in the upper shield layer itself.
- Recently, a giant magnetoresistive (GMR) read head is made practicable. The GMR read head uses a GMR effect which is capable of realizing a drastic high output in comparison with the MR read head. The GMR read head generally uses a spin valve effect. The “spin valve effect” is a phenomenon where a variation of resistance corresponds to a cosine between magnetic directions of two adjacent magnetic layers and thereby a large variation of resistance is obtained by a small operational magnetic field. Such a GMR read head using the spin valve effect is disclosed, for example, in Japanese Unexamined Patent Publications of Tokkai No. Hei 10-162,322 (or JP-A 10-162322) and Tokkai No. Hei 11-16,120 (or JP-A 12-16120).
- JP-A 10-162322 provides a merged GMR head that realizes simultaneously the magnetizing direction of the magnetization fixing, layer of a spin valve element and the magnetic anisotropic direction of a magnetic shield or a recording magnetic pole, and that can secure a stable operation of a magnetoresistence effect (MR) read head part and an indudtive (ID) write head part. The merged GMR head disclosed in JP-A 10-162,322 is equipped with an MR read head part having a reproducing function and an ID write head part recording prescribed information on a magnetic recording medium with a magnetic gap part. An MR element is constituted of a center area and end areas. The center area consists of spin valve elements and senses a media magnetic field. The end areas supply a bias magnetic field and an electric current. The other magnetic pole of the ID write head part is constituted of two kinds of laminated magnetic films having a different degree of saturation magnetization. The saturation magnetization of the magnetic film close to a magnetic gap inside each magnetic film is set to be larger than that of the magnetic film away from the magnetic gap.
- TP-A 11-16120 provides a magnetic domain structure which may be optimized even without the execution of the head treatment. JP-A 11-16120 discloses a recording and reproducing separated-type head using a thin film magnetic head. The recording and reproducing separated-type head comprises a reproducing or read head and a recording or write head. The reproducing head comprises a magnetoresistence effect film which is sandwiched between first and second shield layers. In addition, the second shield layer serves as a lower magnetic pole of the recording head. The recording head comprises the lower magnetic pole, a shield layer sandwiching a coil, and an upper magnetic pole. The magnetoresistence effect film is a spin valve film.
- The GMR read head is practically used at a high-density recording area having a recording density of 3 gigabits/inch2 or more. At a recording area having a recording density less than 3 gigabits/inch2, it is possible to sufficiently cover by a conventional MR head using magnetic anisotropy. That is, a practically significant GM read head realizes a high-density recording and reproducing of 3 gigabits/inch2 or more. Accordingly, a magnetic storage apparatus constructed using the GMR head is a high-density recording and reproducing apparatus of 3 gigabits/inch2 or more.
- On the other hand, in the ID write head carrying a recording function to a magnetic recording medium, an improvement of a high-density recording performance is always requested with development of the GMR read head. In particularly, a high coercive force to the magnetic recording medium is indispensable to carry out a high-density recording. This is to minimize a transition length of a magnetizing recorded in the magnetic recording medium with improvement of a recording density and to stably hold the magnetizing although a length of the magnetizing per one bit is shortened. For this purpose, development for the ID write head to enlarge a recording magnetic field is energetically advanced so as to record the magnetic recording medium of a high coercive force which is suitable for the high-density recording.
- Now, with considerations of convenience and low cost in a manufacturing process of the magnetic head, it is effective that a magnetic material is formed by plating. In the plating, it is possible to obtain a desired pattern by forming a photo-resist frame where a shape of magnetic poles (first and second magnetic layers) is preliminarily bored and by growing a plating layer within the photo-resist frame. The first and the second magnetic layers are called lower and upper magnetic layers, respectively. Inasmuch as this method is convenience and low cost, this method presently becomes a standard manufacturing method of a thin-film magnetic head.
- various thin magnetic films suitable for magnetic layers are already known. By way of example, the above-mentioned JP-A 11-16120 discloses a two-layered film comprising a nickel-iron (NiFe) alloy as an essential element. The two-layered film consists of a first magnetic sub-layer having a high saturation magnetic flux density and a second magnetic sub-layer having a low magnetostriction constant. The first and the second magnetic sub-layers are formed by changing a current density by using a flame plating method on an insulating film.
- U.S. Pat. No. 4,661,216 discloses an electoplating bath composition for electroplating a coating of a cobalt-nickel-iron (CoNiFe) alloy with low coercivity, high saturation magnetization (4 πMs), and 0 or slightly negative magnetization (λs) for use in thin film heads for reading and writing. The CoNiFe electroplating bath composition disclosed in U.S. Pat. No. 4,661,216 includes a stress reliving-agent such as saccharin.
- Japanese Unexamined Patent Publication of Tokkai No. Hei 6-346,202 or JP-A 6-346202 discloses a soft magnetic alloy having high Bs, low Hc, and high μ. According to JP-A 6-346202, essential components of this soft magnetic alloy are constituted of iron (Fe), cobalt (Co), and nickel (Ni). In the formula of FexCoyNiz, the atomic ratio of each element in these essential components is expressed by 0.10≦x≦0.55, 0.20≦y≦0.85, 0.05≦z≦0.35 and x+y+z=1. The soft magnetic alloy is substantially constituted of a face-centered cubic crystal single phase. In the case the peak intensity of the (200) plane and that of the (111) plane in the X-ray analysis are respectively defined as I(200) and I(111), I(200)/I(111)≧0.25 is regulated. Furthermore, the absolute value of the saturation magnetostrictoin value (λs) is regulated to 5×10−6 or below. In this way, the λs can substantially be regulated to zero even in the compositional range by which high Bs can be obtained.
- The above-mentioned JP-B 2821456 also discloses a soft magnetic film suitable for the first and the second magnetic layer. The soft magnetic film is a Co—Ni—Fe plating film formed with a plating bath including no addition agent such as saccharin to obtain a pure film having a sulfur content of 0.1% by weight or less. Such a soft magnetic film has a magnetostrictive constant reduced up to a practical level, an extremely high saturation magnetic flux density (Bs) of 1.9-2.2 T, and an extremely small coercive force of 199 A/m or less. The soft magnetic film is called a high-Bs soft magnetic film.
- However, when the first (lower) and the second (upper) magnetic layers are formed using the high-Bs soft magnetic film, problems arise as follows:
- {circle around (1)} stripping or peeling occurs in the first and the second magnetic layers,
- {circle around (2)} cracks occur in a step cover (SC) film which is a boundary face between first and second insulating layers covering the write coil; and
- {circle around (3)} cracks occur in a frame resist on forming the high-Bs soft magnetic film, the plating film grows along the cracks, and then abnormality in shape or shape anomaly occurs in the first and the second magnetic layers.
- It is therefore an object of this invention to provide a magnetic head suitable for a high recording density by resolving various problems which occur in a case where high-Bs soft magnetic films are applied to first and second magnetic layers.
- It is another object of this invention to provide a manufacturing process suitable for the above-mentioned magnetic head.
- It is still another object of this invention to provide a magnetic storage device with the above-mentioned magnetic head.
- Other objects of this invention will become clear as the description proceeds.
- The present inventors discovered that stripping or the like occur because the high-Bs soft magnetic film has a large stress of about 200 MPa and that the high-Bs soft magnetic film has an enlarged adhere force and a reduced stress by inserting a non-magnetic layer under the high-Bs soft magnetic film. This invention is made based on this knowledge.
- That is, this invention improves a magnetic head comprising a substrate-having a principal surface, a first magnetic layer formed on the principal surface of the substrate, a recording gap layer formed on the first magnetic layer, an insulating layer formed on the recording gap layer, a write coil enclosed with and insulated by the insulating layer, and a second magnetic layer. This improvement is that a first antistripping layer is provided under the first magnetic layer and/or that a second antistripping layer is provided under the second magnetic layer. The first antistripping layer may comprise a first conductive layer formed under the first magnetic layer and a first non-magnetic layer formed under the first conductive layer. The second antistripping layer may comprise a second conductive layer formed under the second magnetic layer and a second non-magnetic layer formed under the second conductive layer.
- The conductive layer serves as an electrode on forming the magnetic layer by electroplating. By inserting the non-magnetic layer between the conductive layer and the substrate or the insulating layer, adhesion between the conductive layer and the substrate or the insulating layer is improved. By improving this adhesion, stripping of the conductive layer caused by a large stress of the magnetic layer. As a result, adhesion of the magnetic layer increases.
- The non-magnetic layer may preferably comprise a lamina made of a non-magnetic material (metal) of titanium (Ti) because of large adhesion. However, the non-magnetic layer may comprise a lamina made of metal selected from the group consisting essentially of tantalum (Ta), chromium (Cr), yttrium (Y), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), molybdenum (Mo), and tungsten (W). When the non-magnetic layer is made of titanium, the first non-magnetic layer may preferably have a thickness between 2 nm and 10 nm, both inclusive and the second non-magnetic layer may preferably have a thickness between 10 nm and 290 nm, both inclusive. When the non-magnetic layer is made of tantalum, the first non-magnetic layer may preferably have a thickness between 1.5 nm and 10 nm, both inclusive and the second non-magnetic layer may preferably have a thickness between 8 nm and 290 nm, both inclusive. When the non-magnetic layer is made of chromium, the first non-magnetic layer may preferably have a thickness between 2.5 nm and 10 nm, both inclusive and the second non-magnetic layer may preferably have a thickness between 12 nm and 290 nm, both inclusive. This reason will be later described. In other words, the non-magnetic layer may desirably comprise a lamina made of metal having a tensile stress.
- Preferably, the magnetic layer may comprise a single-layer structure of essential elements of cobalt (Co), nickel (Ni), andiron (Fe) or may comprise a laminated structure of a first magnetic sub-layer of essential elements of cobalt (Co), nickel (Ni), and iron (Fe) and a second magnetic sub-layer of essential elements of nickel (Ni) and iron (Fe). When the magnetic layer comprises the laminated structure, the first magnetic sub-layer is disposed near to the recording gap layer. The magnetic layer (first magnetic sub-layer) of the essential elements of cobalt (Co), nickel (Ni), and iron (Fe) may preferably have a crystal structure selected from the group consisting of a face-centered cubic (fcc) structure, a body-centered cubic (bcc) structure, and a mixed crystal with a face-centered cubic (fcc) structure and a body-centered cubic (bcc) structure and may preferably have a crystal particle diameter which is not more than 20 nm. This is because such a magnetic layer becomes a high-Bs soft magnetic film.
- In addition, the magnetic layer may desirably comprise a lamina selected from the group consisting essentially of cobalt-iron-nickel (CoFeNi), cobalt-iron-copper (CoFeCu), cobalt-iron-molybdenum (CoFeMo), cobalt-iron-boron (CoFeB), and cobalt-iron (CoFe). The lamina may comprise alloy or mixture. The lamina may comprise one selected from a single-layer film and a multi-layer film. The mixture further may comprise an additional alloy consisting essentially of nickel-iron (NiFe).
- A combination of the insulating layer and the write coil may be made by successively laminating a first insulating layer, the write coil, and a second insulating layer, a periphery end of the second insulating layer on a side of an air bearing surface (ABS) may be close to the air bearing surface than a periphery end of the first insulating layer. In this event, inasmuch as a periphery of the second insulating layer is outside a periphery of the first insulating layer, a boundary face between the second insulating layer and the first insulating layer is not exposed to the outside. Accordingly, inasmuch as the stress of the second magnetic layer is applied to the boundary face between the second insulating layer and the first insulating layer, crack does not occur in the boundary face in question.
-
FIG. 1 is an air bearing surface (ABS) view of a conventional magnetic head; -
FIG. 2 is a vertical sectional view taken along the lines II-II ofFIG. 1 : -
FIG. 3 is an air bearing surface (ABS) view of a magnetic head according to a first embodiment of this invention; -
FIG. 4 is a vertical sectional view taken along the lines IV-IV ofFIG. 3 ; -
FIG. 5 is a perspective view of a magnetic head according to this invention; -
FIG. 6 is a block diagram showing the magnetic storage unit on which the magnetic head illustrated inFIG. 5 is mounted; -
FIG. 7 is an air bearing surface (ABS) view of a magnetic head according to a second embodiment of this invention: -
FIG. 8 is a vertical sectional view taken along the lines VIII-VIII of Fig; -
FIG. 9 is an air bearing surface (ABS) view of a magnetic head according to a third embodiment of this invention; and -
FIG. 10 is a vertical sectional view taken along the lines X-X ofFIG. 9 . - Referring to
FIGS. 1 and 2 , a conventional magnetic head will first be described in order to facilitate an understanding of the present invention.FIG. 1 is an air bearing surface (ABS) view of the conventional magnetic head.FIG. 2 is a vertical sectional view taken along the lines II-II ofFIG. 1 . - In the manner which will later become clear, the illustrated magnetic head is a merged GMR bead which comprises a giant magnetoresistence (GMR) read head and an inductive (ID) write head. Description will be first directed to the GMR read head and will be subsequently directed to the ID write head.
- The magnetic head comprises a
substrate 10 having aprincipal surface 10 a. Thesubstrate 10 comprises a ceramic substrate 11 (which is omitted inFIG. 1 ) serving as a slider, a first or lowermagnetic shield layer 12 formed on theceramic substrate 11, amagnetic separation layer 13 formed on the firstmagnetic shield layer 12, and aGMR element 14 sandwiched in themagnetic separation layer 13. In addition, formed on themagnetic separation layer 13, a secondmagnetic shield layer 15 doubles as a first or lowermagnetic layer 16 of the IR write head. A combination of the firstmagnetic shield layer 12, themagnetic separation layer 13, theGM element 14, and the secondmagnetic shield layer 15 serves as the GMR read head. - As shown in
FIG. 1 , theGMR element 14 comprises acenter area 141 and endareas 142 which are disposed in both ends of thecenter area 141. Thecenter area 141 is made of a spin valve laminated structure for generating a GMR effect. Theend areas 142 is for supplying an electric current and a bias magnetic field. - On the other hand, the ID read head comprises the first or lower
magnetic layer 16 formed on theprincipal surface 10 a of thesubstrate 10, arecording gap layer 17, a first insulatinglayer 18 formed on therecording gap layer 17 except for a pole tip region, awrite coil 19 formed on the first insulatinglayer 19, a second insulatinglayer 20 formed on the first insulatinglayer 18 so as to cover thewrite coil 19′, and a second or uppermagnetic layer 21 formed on the pole chip region of therecording gap layer 17 and on the first and the second insulatinglayers write coil 19 is enclosed with and insulated by a combination of the first and the second insulatinglayers magnetic gap layer 17 between the first and the secondmagnetic layers write coil 19. - A
boundary face 181 between the first and the second insulatinglayers - Each of the first and the second
magnetic layers magnetic layers boundary face 181 between the first and the second insulatinglayers magnetic layers - Referring to
FIGS. 3 and 4 , the description will proceed to a magnetic head according to a first embodiment of this invention.FIG. 3 is an air bearing surface (ABS) view of the magnetic head.FIG. 4 is a vertical sectional view taken along the lines IV-IV ofFIG. 3 . InFIGS. 3 and 4 , similar components and part to those inFIGS. 1 and 2 are depicted by like reference numerals and description of such components and parts will be omitted. - The illustrated magnetic head is a merged GMR head which comprises a giant magnetoresistence (GMR) read head and an inductive (ID) write head.
- The magnetic head comprises the
ceramic substrate 11 serving as the slider. Theceramic substrate 11 is made of complex or composite ceramic consisting of alumina (Al2O3) and titanium carbide. On theceramic substrate 11, the GMR read head having a reproducing function is formed. - The GRM read head comprises the first
magnetic shield layer 12, the secondmagnetic shield layer 15, themagnetic separation layer 13, and theGMR element 14. Formed on the ceramic substrate, the firstmagnetic shield layer 12 is made of a patterned cobalt-zirconium-tantalum (CoZrTa) film. The secondmagnetic shielding layer 15 is made of a nickel-iron (NiFe) film which contains about 80% by weight of nickel (Ni). Disposed between the first and the second magnetic shield layers 12 and 15, themagnetic separation layer 13 is made of alumina (Al2O3). The firstmagnetic shield layer 12 has a thickness of 1 μm and the secondmagnetic shield layer 15 has a thickness of 3 μm. In addition, a gap of the firstmagnetic shield layer 12 and the secondmagnetic shield layer 15 is equal to 0.13 μm. - As shown in
FIG. 3 , theGMR element 14 comprises thecenter area 141 and theend areas 142 which are disposed in both ends of thecenter area 141. Thecenter area 141 is for sensing a magnetic field from a magnetic recording medium (not shown) while theend areas 142 is for supplying thecenter area 141 with an electric current and a bias magnetic field. Thecenter area 141 is made of a laminated structure having a GMR effect which is generally called a spin valve effect. Specifically, formed on the firstmagnetic shield layer 12, thecenter area 141 comprises the laminated structure consisting of an undercoating zirconium (Zr) film having a thickness of about 3 nm, a platinum-manganese (PtMn) film having a thickness of about 20 nm, a cobalt-iron (CoFe) film having a thickness of about 2 nm, a copper (Cu) film having a thickness of about 2.1 nm, a cobalt-iron (CoFe) film having a thickness of about 0.5 nm, a nickel-iron (NiFe) film having a thickness of about 2 nm, and a zirconium (Zr) film having a thickness of about 3 nm in this order. Thecenter area 141 has a width of 0.5 μm which defines a reproducing track width. Eachend area 142 has a laminated structure which comprises a permanent magnet film and an electrode film. The permanent magnet film is, for example, a cobalt-platinum (CoPt) film having a thickness of about 20 nm. The electrode film is, for example, a gold (Au) film having a thickness of about 50 nm. - On the GMR read head, the ID write head is formed. Specifically, on the
magnetic separation layer 13, the firstmagnetic layer 16 is formed through a firstnon-magnetic layer 22 and a firstconductive layer 23. The first-magnetic layer 16 doubles the secondmagnetic shield layer 15. The firstnon-magnetic layer 22 is made of titanium (Ti) and has a thickness of about 3 nm. The firstconductive layer 23 is made of nickel-iron (NiFe) and has a thickness of about 10 nm. The firstmagnetic layer 16 has a laminated structure which comprises a nickel-iron (NiFe) film having a thickness of about 2.0 μm and a cobalt-nickel-iron (CoNiFe) film having a thickness of about 0.5 μm and including no stress relieving agent such as saccharin. - Inasmuch as the first
magnetic layer 16 is formed on themagnetic separation layer 13 through the firstnon-magnetic layer 22, it is possible to improve adhesion between the firstmagnetic layer 16 and themagnetic separation layer 13. Accordingly, it is possible to prevent the firstmagnetic layer 16 from stripping caused by a stress in the cobalt-nickel-iron (CoNiFe) film which is a component of the firstmagnetic layer 16. Although adhesion is good when a thickness of the firstnon-magnetic layer 22 is 2 nm or more, the thickness of the firstnon-magnetic layer 22 is limited to an upper limit of 10 nm because the reproducing gap length widens too if the thickness of the firstnon-magnetic layer 22 is more than 10 nm. At any rate, a combination of the firstnon-magnetic layer 22 and the firstconductive layer 23 serves as a first antistripping layer for preventing the firstmagnetic layer 16 from stripping. - The ID write head comprises the second
magnetic shield layer 15 as the firstmagnetic layer 16, therecording gap layer 17 formed on the firstmagnetic layer 16, and the first insulatinglayer 19 formed on therecording gap layer 17 except for a pole tip region. The first insulatinglayer 18 defines a zero throat height which is well known in the art. Therecording gap layer 17 has a thickness of about 0.15 μm and is made of alumina (Al2O3). The first insulatinglayer 19 consists of a photo-resist. In addition, on the first insulatinglayer 18 is formed thewrite coil 19 which consists of a copper (Cu) plating film. Furthermore, the second insulatinglayer 20 is formed on the first insulatinglayer 18, thewrite coil 19, and the recording gap layer except for an pole tip region so as to cover a peripheral part of the first insulatinglayer 18. Thewrite coil 19 is insulated by the second insulatinglayer 20. The second insulatinglayer 20 consist of a photo-resist. With this structure, aboundary face 181 between the first insulatinglayer 18 and the second insulatinglayer 20 is not exposed to the side of the secondmagnetic layer 21. Accordingly, it is possible to prevent theboundary face 181 from cracking caused by a stress of the cobalt-nickel-iron (CoNiFe) film which includes no stress relieving agent such as saccharin and which is a component of the secondmagnetic layer 21. - On the pole tip region of the
recording gap layer 17 and the second insulatinglayer 20, the secondmagnetic layer 21 is formed through a secondnon-magnetic layer 24 and a secondconductive layer 25. The secondnon-magnetic layer 24 is made of titanium (Ti) and has a thickness of about 50 nm. The secondconductive layer 25 is made of nickel-iron (NiFe) and has a thickness of about 50 nm. The secondmagnetic layer 21 comprises a laminated film which consists of the cobalt-nickel-iron (CoNiFe) film having a thickness of about 0.5 μm and a nickel-iron (NiFe) film having a thickness of about 2.8 μm. The secondmagnetic layer 21 exposes to an air bearing surface (ABS) which faces on a magnetic recording medium (not shown). - Inasmuch as the second
magnetic layer 21 is formed on the second insulatinglayer 20 through the secondnon-magnetic layer 24, adhesion between the secondmagnetic layer 21 and therecording gap layer 17 and between the secondmagnetic layer 21 and the second insulatinglayer 20 improves and a stress of the cobalt-nickel-iron (CoNiFe) film in the secondmagnetic layer 21 decreases. Accordingly, it is possible to prevent the secondmagnetic layer 21 from stripping caused by the stress of the cobalt-nickel-iron (CoNiFe) which includes no stress relieving agent such as saccharin and which is a component of the secondmagnetic layer 21. At any rate, a combination of the secondnon-magnetic layer 24 and the secondconductive layer 25 serves as a second antistripping layer for preventing the secondmagnetic layer 21 from stripping. - A thickness of 10 nm or more is required for the second
nonmagnetic layer 24 to obtain adhesion between the second insulatinglayer 20 and the secondmagnetic layer 21 and to decrease the stress of the cobalt-nickel-iron (CoNiFe) film in the secondmagnetic layer 21. - The second
non-magnetic layer 24 acts as a part of an effective recording gap. It is assumed that the effective recording gap has a length of a, therecording gap layer 17 has a thickness of b, and the secondnon-magnetic layer 24 has a thickness of c. In this event, the length a of the effective recording gap is equal to a sum of the thickness b of therecording gap layer 17 and the thickness c of the secondnon-magnetic layer 24, namely, a=(b+c). In addition, it is desirable that the length a of the effective recording gap lies a range between 50 nm and 300 nm, both inclusive. Accordingly, the sum (b+c) lies a range between 50 nm and 300 nm, both inclusive. On the other hand, the thickness b of 10 nm or more is required for therecording gap layer 17 to electrically separate the firstmagnetic layer 16 from the secondmagnetic layer 21 at the air bearing surface (ABS). Accordingly, to satisfy there conditions, the thickness c of the secondnon-magnetic layer 24 has an upper limit value of 290 nm. - Referring to
FIGS. 5 and 6 , the description will proceed to a magnetic head according to this invention and a magnetic storage unit on which the magnetic head illustrated inFIG. 5 is mounted.FIG. 5 is a perspective view of the magnetic head according to this invention.FIG. 6 is a block diagram showing the magnetic storage unit on which the magnetic head illustrated inFIG. 5 is mounted. - As shown in
FIG. 5 , themagnetic head 30 comprises aslider 31,electrodes 32, and a recording and reproducingelement 33. Theslider 31 corresponds to theceramic substrate 11 illustrated inFIGS. 3 and 4 . The recording and reproducingelement 33 corresponds to a combination of the firstmagnetic shielding layer 12, themagnetic separation layer 13, theGMR element 14, the second magnetic shielding layer 15 (or the firstmagnetic layer 16, therecording gap layer 17, the first insulatinglayer 18, thewrite coil 19, the second insulatinglayer 20, the secondmagnetic layer 21, the firstnon-magnetic layer 22, the firstconductive layer 23, the secondnon-magnetic layer 24, and the secondconductive layer 25 illustrated inFIGS. 3 and 4 . - As shown in
FIG. 6 , themagnetic storage unit 40 comprises themagnetic head 30 illustratedFIG. 5 , amagnetic recording medium 41 having a magnetic recording surface, and aspindle motor 32 for rotatably driving themagnetic recording medium 41. Themagnetic head 30 is mounted by asuspension member 43 and anarm 44 to face to the magnetic recording surface of themagnetic recording medium 41. Themagnetic head 30 is tracked on themagnetic recording medium 41 by a voice coil motor (VCM) 45. That is, thevoice coil motor 45 carries out positioning of themagnetic head 30. In themagnetic storage unit 40, magnetic recording and reproducing operation is carried out by a signal which is supplied from a recording and reproducingchannel 46 to themagnetic head 30. The recording and reproducingchannel 46, thevoice coil motor 45, and thespindle motor 32 are controlled by acontrol unit 47. - With this structure, it is possible to realize the
magnetic storage unit 40 having a recording density of about 10 gigabits/inch2 or more when themagnetic recording medium 41 has a coercive force of 278600 A/m and when a magnetic distance between themagnetic recording medium 41 and themagnetic head 30 is equal to about 35 nm. - Referring to
FIGS. 7 and 8 , the description will proceed to a magnetic head according to a second embodiment of this invention.FIG. 7 is an air bearing surface (ABS) view of the magnetic head.FIG. 8 is a vertical sectional view taken along the lines VIII-VIII ofFIG. 7 . InFIGS. 7 and 8 , similar components and part to those inFIGS. 3 and 4 are depicted by like reference numerals and description of such components and parts will be omitted. - The illustrated magnetic head is similar in structure and operation to the magnetic head illustrated in
FIGS. 3 and 4 except that the secondnon-magnetic layer 24 and the secondconductive layer 25 are omitted from the magnetic head illustrated inFIGS. 3 and 4 . In other words, the illustrated magnetic head is provided with the firstnon-magnetic layer 22 and the firstconductive layer 23 alone. With this structure, it is possible to prevent the firstmagnetic layer 16 from stripping caused by a stress in the CoNiFe film which includes no stress relieving agent such as saccharin and which is a component of the firstmagnetic layer 16. - Referring to
FIGS. 9 and 10 , the description will proceed to a magnetic head according to a third embodiment of this invention.FIG. 9 is an air bearing surface (ABS) view of the magnetic head.FIG. 10 is a vertical sectional view taken along the lines X-X ofFIG. 9 . InFIGS. 9 and 10 , similar components and part to those inFIGS. 3 and 4 are depicted by like reference numerals and description of such components and parts will be omitted. - The illustrated magnetic head is similar in structure and operation to the magnetic head illustrated in
FIGS. 3 and 4 except that the firstnon-magnetic layer 22 and the firstconductive layer 23 are omitted from the magnetic head illustrated inFIGS. 3 and 4 . In other words, the illustrated magnetic head is provided with the secondnon-magnetic layer 24 and the secondconductive layer 25 alone. With this structure, it is possible to prevent the secondmagnetic layer 21 from stripping caused by the stress of the CoNiFe which includes no stress relieving agent such as saccharin and which is a component of the secondmagnetic layer 21. - Now, description will proceed to actual examples of the magnetic head according to this invention. It is noted throughout the specification hereunder that composition of material is represented on the basis of an atomic percent (at %) and a value put in parentheses represents a thickness of a layer, a film, or a lamina.
- Firstly, a wrong occurrence resist effect by the first
nonmagnetic layer 22 is examined in a case of using a two-layer film of nickel-iron (NiFe)/cobalt-iron-nickel (CoFeNi) as the firstmagnetic layer 16. - Tables 1, 2, and 3 show probability of occurrence of stripping in the first
magnetic layer 16, probability of occurrence of crack in the second insulatinglayer 20, and probability of occurrence of shape anomaly in the firstmagnetic layer 16 in a case of manufacturing the magnetic head having structure illustrated inFIGS. 3 and 4 by using a lamina made of metal selected from titanium (Ti), tantalum (Ta), and chromium (Cr) as the firstnon-magnetic layer 22 and by changing thickness thereof. In elements used in measurement, the firstmagnetic layer 16 doubling as the secondmagnetic shield layer 15 comprises the two-layer film (which laminates CoFeNi on NiFe) made of Ni80Fe20 (1.0 μm)/CO65Fe23Ni12 (1.0 μm) formed by plating with using no stress relaxation agent and the secondmagnetic layer 21 comprises a single-layer film made of Co65Fe23Ni12 (1.4 μm) formed by plating with using no stress relaxation agent. The secondnon-magnetic layer 24 is made of titanium (Ti) and has a thickness of 30 nm. As result, wrong such as stripping caused by the secondmagnetic layer 21, occurrence of crack, and shape anomaly are not occurred. On manufacturing, following is used as each element of the magnetic head. Composition of each material described below is composition (at %) of a target for use in sputtering. - The
ceramic substrate 11 comprises a substrate made of alumina titanium carbide (Al2O3—TiC) having a thickness of 1.2 mm on which alumina (Al2O3) is laminated by 3 μm. The firstmagnetic shield layer 12 is made of Co89Zr4Ta4Cr3 (1 μm). A vertical bias grounding layer is made of chromium (Cr) (10 nm) A vertical bias is made of Co74.5Cr10.5Pt15 (16 nm). Themagnetic separation layer 15 is made of alumina (Al2O3). TheGM element 15 has a laminated structure consisting of tantalum (Ta) (3 nm), Pt4MnS4 (20 nm), CogoFelo (3 nm), ruthenium (Ru) (0.7 nm), CogoFelo (3 nm), copper (Cu) (2.1 nm), Co90Fe10 (0.5 nm), Ni82Fe18 (1 nm), copper (Cu) (2 nm), and tantalum (Ta) (3 nm). The firstconductive layer 23 is made of; Ni80Fe20 (100 nm). Therecording gap layer 17 is made of alumina (Al2O3) (0.18 μm). Thewrite coil 19 is made of copper (Cu) (1.8 μm). The secondconductive layer 25 is made of Ni80Fe20 (50 nm). The second insulatinglayer 20 comprises a resist.TABLE 1 PROBABILITY PROBABILITY PROBABLITY OF OF OF OCCURRENCE OCCURRENCE OCCURENCE OF STRIPPING OF CRACK OF SHAPE THICKNESS IN 1ST IN 2ND ANOMALY IN OF Ti LAYER MAGNETIC INSULATING 1ST MAGNETIC (nm) LAYER (%) LAYER (%) LAYER (%) 0 82 72 66 0.5 85 74 68 1.0 72 63 55 1.5 50 41 36 2.0 9 2 0 2.5 6 0 0 3.0 3 0 0 4.0 0 0 0 5.0 0 0 0 7.0 0 0 0 10.0 0 0 0 20.0 0 0 0 -
TABLE 2 PROBABILITY PROBABILITY PROBABLITY OF OF OF OCCURRENCE OCCURRENCE OCCURENCE OF STRIPPING OF CRACK OF SHAPE THICKNESS IN 1ST IN 2ND ANOMALY IN OF Ta LAYER MAGNETIC INSULATING 1ST MAGNETIC (nm) LAYER (%) LAYER (%) LAYER (%) 0 82 72 66 0.5 80 72 60 1.0 62 59 47 1.5 14 11 7 2.0 5 3 2 2.5 2 2 0 3.0 0 0 0 4.0 0 0 0 5.0 0 0 0 7.0 0 0 0 10.0 0 0 0 20.0 0 0 0 -
TABLE 3 PROBABILITY PROBABILITY PROBABLITY OF OF OF OCCURRENCE OCCURRENCE OCCURENCE OF STRIPPING OF CRACK OF SHAPE THICKNESS IN 1ST IN 2ND ANOMALY IN OF Cr LAYER MAGNETIC INSULATING 1ST MAGNETIC (nm) LAYER (%) LAYER (%) LAYER (%) 0 82 72 66 0.5 79 71 61 1.0 72 64 59 1.5 64 58 49 2.0 59 53 46 2.5 12 9 7 3.0 7 4 3 4.0 4 1 1 5.0 0 0 0 7.0 0 0 0 10.0 0 0 0 20.0 0 0 0 - In a case of using a titanium (Ti) layer as the first
non-magnetic layer 22, stripping caused by the firstmagnetic layer 16, occurrence of crack, and shape anomaly occur at a large probability of 30% or more when the titanium (Ti) layer has a thickness of 1.5 nm or less. When the titanium (Ti) layer has a thickness of 2.0 nm or more, the probability of occurrence of respective wrongs is lowered to several % or less and the wrong occurrence resist effect caused by the firstnon-magnetic layer 22 made of titanium (Ti) presents. - In a case of using a tantalum (Ta) layer as the first
non-magnetic layer 22, stripping caused by the firstmagnetic layer 16, occurrence of crack, and shape anomaly occur at a large probability of 40% or more when the tantalum (Ta) layer has a thickness of 1.0 nm or less. When the tantalum (Ta) layer has a thickness of 1.5 nm or more, the probability of occurrence of respective wrongs is lowered to some ten % or less and the wrong occurrence resist effect caused by the firstnon-magnetic layer 22 made of tantalum (Ta) presents. - In a case of using a chromium (Cr) layer as the first
non-magnetic layer 22, stripping caused by the firstmagnetic layer 16, occurrence of crack, and shape anomaly occur at a large probability of 40% or more when the chromium (Cr) layer has a thickness of 2.0 nm or less. When the Ca layer has a thickness of 2.5 nm or more, the probability of occurrence of respective wrongs is lowered to some ten % or less and the wrong occurrence resist effect caused by the firstnon-magnetic layer 22 made of chromium (Cr) presents. - Secondary, incidence of wrong is measured by using a single-layer film of an alloy made of cobalt-iron-nickel (CoFeNi) as the first
magnetic layer 16 and by manufacturing the magnetic head with composition of the alloy made of cobalt-iron-nickel (CoFeNi) changed. - Table 4 shows thickness of the first
non-magnetic layer 22 made of titanium (Ti) having the thinnest thickness where each of the probability of occurrence of stripping in the firstmagnetic layer 16, the probability of occurrence of crack in the second insulatinglayer 20, and the probability of occurrence of shape anomaly in the firstmagnetic layer 16 in a case of using a titanium (Ti) layer as the firstnon-magnetic layer 22. In this event, the firstmagnetic layer 16 doubling as the secondmagnetic shield layer 15 comprises one of three types of the single-layer film made of cobalt-iron-nickel (CoFeNi) having different composition (Co65Fe23Ni12, Co43Fe16Ni41, Co80Fe9Ni11) having a thickness of 2 μm each of which formed by plating with using no stress relaxation agent. In elements used measurement, the secondmagnetic layer 21 comprises a single-layer film made of Co65Fe23Ni12 (1.4 μm) formed by plating with using no stress relaxation agent. The secondnon-magnetic layer 24 is made of titanium (Ti) having a thickness of 30 nm in order to resist occurrence of wrong caused by the secondmagnetic layer 24. As result, wrong such as stripping caused by the secondmagnetic layer 21, occurrence of crack, and shape anomaly is not occurred. As each element of the magnetic head, similar ones used in those to obtain data in Tables 1 to 3 are used.TABLE 4 MINIMUM MINIMUM MINIUM THICKNESS OF THICKNESS OF THICKNESS OF Ti LAYER WHERE Ti LAYER WHERE Ti LAYER WHERE PROBABILITY PROBABILITY PROBABILITY OF OCCURRENCE OF OCCURRENCE OF OCCURRENCE OF STRIPPING OF CRACK IN OF SHAPE IN 1ST 2NT ANOMALY IN 1ST COMPOSITION OF MAGNETIC INSULATING MAGNETIC 1ST MAGNETIC LAYER IS LESS LAYER IS LESS LAYER IS LESS LAYER (at %) THAN 20% (nm) THAN 20% (nm) THAN 20% (nm) Co66Fe23Ni12 2.0 2.0 2.0 Co43Fe15Ni41 2.0 2.0 2.0 Co80Fe9Ni11 2.0 2.0 2.0 - The thickness of the first
non-magnetic layer 22 made of titanium (Ti) having the thinnest thickness where each of the probability of occurrence of stripping in the firstmagnetic layer 16, the probability of occurrence of crack in the second insulatinglayer 20, and the probability of occurrence of shape anomaly in the firstmagnetic layer 16 is less than 20% is 2.0 nm in the case of any composition. Difference is not present in the wrong occurrence resist effect caused by the firstnon-magnetic layer 22 made of titanium (Ti) although the composition of the alloy made of cobalt-iron-nickel (CoFeNi) differs from each other. - Thirdly, a wrong occurrence resist effect caused by the second
non-magnetic layer 24 is examined in a case of using a two-layer film made of cobalt-iron-nickel (CoFeNi)/nickel-iron (NiFe) as the secondmagnetic layer 21. - Tables 5, 6, and 7 show probability of occurrence of stripping in the second
magnetic layer 21, probability of occurrence of crack in the second insulatinglayer 20, and probability of occurrence of shape anomaly in the secondmagnetic layer 21 in a case of manufacturing the magnetic head having structure illustrated inFIGS. 3 and 4 by using a lambda made of metal selected from titaniu (Ti), tantalum (Ta), and chromium (Cr) as the secondnon-magnetic layer 24 and by changing thickness thereof. In elements used in measurement, the firstmagnetic layer 16 doubling as the secondmagnetic shield layer 15 comprises a single-layer film made of Co65Fe23Ni12 (2.0 μm) formed by plating with using no stress relaxation agent and the secondmagnetic layer 21 comprises a two-layer film made of Co65Fe23Ni12 (0.7 μm)/Ni80Fe20 (0.7 μm) formed by plating with using no stress relaxation agent. The firstnon-magnetic layer 22 is made of titanium (Ti) having a thickness of 5 nm. As result, wrong such as stripping caused by the firstmagnetic layer 16, occurrence of crack, and shape anomaly is not occurred. On manufacturing, as each element of the magnetic head, similar ones used in those to obtain data in Tables 1 to 3 are used.TABLE 5 PROBABILITY PROBABILITY PROBABILITY OF OF OF OCCURRENCE OCCURRENCE OCCURRENCE OF SHAPE THICKNESS OF STRIPPING OF CRACK ANOMALY OF Ti IN 2ND IN 2ND IN 2ND LAYER MAGNETIC INSULATING MAGNETIC (nm) LAYER (%) LAYER (%) LAYER (%) 0 95 87 77 5.0 92 84 79 8.0 77 71 65 9.0 62 57 51 10.0 13 9 6 12.0 7 4 3 15.0 0 0 0 20.0 0 0 0 40.0 1 0 0 100.0 0 0 0 -
TABLE 6 PROBABILITY PROBABILITY PROBABILITY OF OF OF OCCURRENCE OCCURRENCE OCCURRENCE OF SHAPE THICKNESS OF STRIPPING OF CRACK ANOMALY OF Ta IN 2ND IN 2ND IN 2ND LAYER MAGNETIC INSULATING MAGNETIC (nm) LAYER (%) LAYER (%) LAYER (%) 0 95 87 77 7.0 72 64 59 8.0 19 11 9 9.0 7 4 1 10.0 3 2 1 12.0 1 0 0 15.0 0 0 0 20.0 0 0 0 40.0 1 1 1 100.0 0 0 0 -
TABLE 7 PROBABILITY PROBABILITY PROBABILITY OF OF OF OCCURRENCE OCCURRENCE OCCURRENCE OF SHAPE THICKNESS OF STRIPPING OF CRACK ANOMALY OF Cr IN 2ND IN 2ND IN 2ND LAYER MAGNETIC INSULATING MAGNETIC (nm) LAYER (%) LAYER (%) LAYER (%) 0 95 87 77 5.0 91 82 75 8.0 77 69 67 9.0 67 54 49 10.0 52 43 36 12.0 17 12 9 15.0 3 2 1 20.0 1 1 0 40.0 2 1 1 100.0 1 0 0 - In a case of using a titanium (Ti) layer as the second
non-magnetic layer 24, stripping caused by the secondmagnetic layer 21, occurrence of crack, and shape anomaly occur at a large probability of 50% or more when the titanium (Ti) layer has a thickness of 9.0 nm or less. When the titanium (Ti) layer has a thickness of 10.0 nm or more, the probability of occurrence of respective wrongs is lowered to some ten % or less and the wrong occurrence resist effect caused by the secondnon-magnetic layer 24 made of titanium (Ti) presents. - In a case of using a tantalum (Ta) layer as the second
non-magnetic layer 24, stripping caused by the secondmagnetic layer 21, occurrence of crack, and shape anomaly occur at a large probability of 50% or more when the tantalum (Ta) layer has a thickness of 7.0 nm or less. When the tantalum (Ta) layer has a thickness of 8.0 nm or more, the probability of occurrence of respective wrongs is lowered to some ten % or less and the wrong occurrence resist effect caused by the secondnonmagnetic layer 24 made of tantalum (Ta) presents. - In a case of using a chromium (Cr) layer as the second
non-magnetic layer 24, stripping caused by the secondmagnetic layer 21, occurrence of crack, and shape anomaly occur at a large probability of 30% or more when the chromium (Cr) layer has a thickness of 10.0 nm or less. When the chromium (Cr) layer has a thickness of 12.0 nm or more, the probability of occurrence of respective wrongs is lowered to some ten % or less and the wrong occurrence resist effect caused by the secondnon-magnetic layer 24 made of chromium (Cr) presents. - Fourthly, incidence of wrong is measured by using a single-layer film of an alloy made of cobalt-iron-nickel (CoFeNi) as the second
magnetic layer 21 and by manufacturing the magnetic head with composition of the alloy made of cobalt-iron-nickel (CoFeNi) changed. - Table 8 shows thickness of the second
non-magnetic layer 24 made of titanium (Ti) having the thinnest thickness where each of the probability of occurrence of stripping in the secondmagnetic layer 21, the probability of occurrence of crack in the second insulatinglayer 20, and the probability of occurrence of shape anomaly in the secondmagnetic layer 21 in a case of using a titanium (Ti) layer as the secondnon-magnetic layer 24. In this event, the secondmagnetic layer 16 comprises one of three types of the single-layer film made of cobalt-iron-nickel (CoFeNi) having different composition (Co65Fe23Ni12, Co43Fe16Ni41, Co80Fe9Ni11) having a thickness of 1.2 μm each of which formed by plating with using no stress relaxation agent. In elements used measurement, the firstmagnetic layer 16 doubling as the secondmagnetic shield layer 15 comprises a single-layer film made of Co65Fe23Ni12 (2.0 μm) formed by plating with using no stress relaxation agent. The firstnon-magnetic layer 22 is made of titanium (Ti) having a thickness of 5 nm. As result, wrong such as stripping caused by the firstmagnetic layer 16, occurrence of crack, and shape anomaly is not occurred. As each element of the magnetic head, similar ones used in those to obtain data in Tables 1 to 3 are used.TABLE 8 MINIMUM MINIMUM MINIUM THICKNESS OF THICKNESS OF THICKNESS OF Ti LAYER WHERE Ti LAYER WHERE Ti LAYER WHERE PROBABILITY PROBABILITY PROBABILITY OF OCCURRENCE OF OCCURRENCE OF OCCURRENCE OF STRIPPING OF CRACK IN OF SHAPE IN 2ND 2ND ANOMALY IN 2ND COMPOSISION OF MAGNETIC INSULATING MAGNETIC 2ND MAGNETIC LAYER IS LESS LAYER IS LESS LAYER IS LESS LAYER (at %) THAN 20% (nm) THAN 20% (nm) THAN 20% (nm) Co65Fe23Ni12 10.0 10.0 10.0 Co43Fe15Ni41 10.0 10.0 10.0 Co80Fe9Ni11 10.0 10.0 10.0 - The thickness of the second
non-magnetic layer 24 made of titanium (Ti) having the thinnest thickness where each of the probability of occurrence of stripping in the secondmagnetic layer 21, the probability of occurrence of crack in the second insulatinglayer 20, and the probability of occurrence of shape anomaly in the secondmagnetic layer 21 is less than 20% is 10.0 nm in the case of any composition. Difference is not present in the wrong occurrence resist effect caused by the secondnon-magnetic layer 24 made of titanium (Ti) although the composition of the alloy made of cobalt-iron-nickel (CoFeNi) differs from each other. - Fifthly, examination is made in a case of using, as the first and the second
magnetic layers 26 and 21, materials except for the two-layer film made of cobalt-iron-nickel (CoFeNi) and nickel-iron (NiFe) and the single-layer film made of cobalt-iron-nickel (CoFeNi). - Tables 9, 10, 11, and 12 show probability of occurrence of stripping in the first
magnetic layer 16, probability of occurrence of crack in the second insulatinglayer 20, and probability of occurrence of shape anomaly in the firstmagnetic layer 16 in a case of manufacturing the magnetic head having structure illustrated inFIGS. 3 and 4 by using, as the firstnon-magnetic layer 22, a lamina made of metal selected from titanium (Ti), tantalum (Ta), and chromium (Cr) each having a thickness of 5 nm and by using, as the firstmagnetic layer 16 doubling as the secondmagnetic shield layer 15, a single-layer film made of one selected from Co74Fe23Cu3, Co72Fe24Mo4, and Co77Fe19B4, and Co90Fe10 formed by plating with using no stress relaxation agent, respectively. In elements used in measurement, the secondmagnetic layer 21 comprises a single-layer film made of Co65Fe23Ni12 (1.4 μm) formed by plating with using no stress relaxation agent. In order to resist wrong occurrence caused by the secondmagnetic layer 21, the secondnon-magnetic layer 24 is made of titanium (Ti) having a thickness of 30 nm. As result, wrong such as stripping caused by the secondmagnetic layer 21, occurrence of crack, and shape anomaly is not occurred. As each element of the magnetic head, similar ones used in those to obtain data in Tables 1 to 3 are used.TABLE 9 A case of the first magnetic layer 16 made of Co74Fe23Cu3PROBABILITY PROBABILITY PROBABILITY OF OF OF OCCURRENCE OCCURRENCE OCCURRENCE KIND OF 1ST OF STRIPPING OF CRACK OF SHAPE NON- IN 1ST IN 2ND ANOMALY IN MAGNETIC MAGNETIC INSULATING 1ST MAGNETIC LAYER LAYER (%) LAYER (%) LAYER (%) NONE 72 62 56 Ti (5 nm) 3 2 2 Ta (5 nm) 0 0 0 Cr (5 nm) 7 4 3 -
TABLE 10 A case of the first magnetic layer 16 made of Co72Fe24Mo4PROBABILITY PROBABILITY PROBABILITY OF OF OF OCCURRENCE OCCURRENCE OCCURRENCE KIND OF 1ST OF STRIPPING OF CRACK OF SHAPE NON- IN 1ST IN 2ND ANOMALY IN MAGNETIC MAGNETIC INSULATING 1ST MAGNETIC LAYER LAYER (%) LAYER (%) LAYER (%) NONE 71 64 53 Ti (5 nm) 0 0 0 Ta (5 nm) 2 1 1 Cr (5 nm) 7 4 3 -
TABLE 11 A case of the first magnetic layer 16 made of Co77Fe19B4PROBABILITY PROBABILITY OF OF OCCURRENCE KIND PROBABILITY OF OCCURRENCE OF SHAPE OF 1ST OCCURRENCE OF OF ANOMALY NON- STRIPPING IN CRACK IN 2ND IN 1ST MAGNETIC 1ST MAGNETIC INSULATING MAGNETIC LAYER LAYER (%) LAYER (%) LAYER (%) NONE 75 67 61 Ti (5 nm) 2 1 1 Ta (5 nm) 1 0 0 Cr (5 nm) 7 5 4 -
TABLE 12 A case of the first magnetic layer 16 made of Co90Fe10PROBABILITY PROBABILITY OF OF OCCURRENCE KIND PROBABILITY OF OCCURRENCE OF SHAPE OF 1ST OCCURRENCE OF OF ANOMALY NON- STRIPPING IN CRACK IN 2ND IN 1ST MAGNETIC 1ST MAGNETIC INSULATING MAGNETIC LAYER LAYER (%) LAYER (%) LAYER (%) NONE 66 58 55 Ti (5 nm) 1 0 0 Ta (5 nm) 1 0 0 Cr (5 nm) 4 2 2 - In each case of Co74Fe23Cu3, Co72Fe24MO4, Co77Fe19B4, and Co90Fe10, the probability of occurrence of wrong has 50% to 70% level in a case of using no fist
non-magnetic layer 22 and is high probability of occurrence of wrong although it is not high in comparison with a case of the above-mentioned two-layer film made of nickel-iron (NiFe)/cobalt-iron-nickel (CoFeNi) or the above-mentioned single-layer film made of cobalt-nickel-iron (CoNiFe). However, by using, as the firstnon-magnetic layer 22, a lamina made of metal selected from titanium (Ti), tantalum (Ta), and chromium (Cr) of a thickness of 5 nm in any case, the probability of occurrence of wrong is lowered to several % or less. It is understood that the firstnon-magnetic layer 22 made of metal selected from titanium (Ti), tantalum (Ta), and chromium (Cr) has the wrong occurrence resist effect not only in the two-layer film made of nickel-iron (NiFe)/cobalt-iron-nickel (CoFeNi) or the single-layer film made of cobalt-iron-nickel (CoFeNi) but also in using any one of cobalt-iron-copper (CoFeCu), cobalt-iron-molybdenum (CoFeMo), cobalt-iron-boron (CoFeB), and cobalt-iron (CoFe). - Although examination is now not made, it seems that it has similar effect in a case of a multi-layer film obtained by combining nickel-iron (NiFe) with any one of cobalt-iron-copper (CoFeCu), cobalt-iron-molybdenum (CoFeMo), cobalt-iron-boron (CoFeB), or cobalt-iron (CoFe).
- Tables 13, 14, 15, and 16 show probability of occurrence of stripping in the second
magnetic layer 21, probability of occurrence of crack in the second insulatinglayer 20, and probability of occurrence of shape anomaly in the secondmagnetic layer 21 in a case of manufacturing the magnetic head having structure illustrated inFIGS. 3 and 4 by using, as the secondnon-magnetic layer 24, a lamina made of metal selected from titanium (Ti), tantalum (Ta) and chromium (Cr) each having a thickness of 30 nm and by using, as the secondmagnetic layer 21, a single-layer film made of one selected from Co74Fe23Cu3, Co72Fe24Mo4, Co77Fe19B4, and Co90Fe10, respectively, each of which has a thickness of 1.4 cm and each of which is formed by plating with using no stress relaxation agent. In elements used in measurement, the firstmagnetic layer 16 comprises a single-layer film made of Co65Fe23Ni12 (2.0 μm) formed by plating with using no stress relaxation agent. In order to resist wrong occurrence caused by the firstmagnetic layer 16, the firstnon-magnetic layer 22 made of titanium (Ti) having a thickness of 5 nm. As result, wrong such as stripping caused by the firstmagnetic layer 16, occurrence of crack, and shape anomaly is not occurred. As each element of the magnetic head, similar ones used in those to obtain data in Tables 1 to 3 are used.TABLE 13 A case of the second magnetic layer 21 made of Co74Fe23Cu3PROBABILITY PROBABILITY OF OF OCCURRENCE KIND PROBABILITY OF OCCURRENCE OF SHAPE OF 2ND OCCURRENCE OF OF ANOMALY NON- STRIPPING IN CRACK IN 2ND IN 2ND MAGNETIC 2ND MAGNETIC INSULATING MAGNETIC LAYER LAYER (%) LAYER (%) LAYER (%) NONE 78 65 61 Ti (30 nm) 0 0 0 Ta (30 nm) 0 0 0 Cr (30 nm) 2 2 1 -
TABLE 14 A case of the second magnetic layer 21 made of Co72Fe24Mo4PROBABILITY PROBABILITY OF OF OCCURRENCE KIND PROBABILITY OF OCCURRENCE OF SHAPE OF 2ND OCCURRENCE OF OF ANOMALY NON- STRIPPING IN CRACK IN 2ND IN 2ND MAGNETIC 2ND MAGNETIC INSULATING MAGNETIC LAYER LAYER (%) LAYER (%) LAYER (%) NONE 74 63 54 Ti (30 nm) 2 2 1 Ta (30 nm) 0 0 0 Cr (30 nm) 9 8 6 -
TABLE 15 A case of the second magnetic layer 21 made of Co77Fe19B4PROBABILITY PROBABILITY OF OF OCCURRENCE KIND PROBABILITY OF OCCURRENCE OF SHAPE OF 2ND OCCURRENCE OF OF ANOMALY NON- STRIPPING IN CRACK IN 2ND IN 2ND MAGNETIC 2ND MAGNETIC INSULATING MAGNETIC LAYER LAYER (%) LAYER (%) LAYER (%) NONE 73 64 59 Ti (30 nm) 2 2 1 Ta (30 nm) 1 1 0 Cr (30 nm) 3 2 1 -
TABLE 16 A case of the second magnetic layer 21 made of Co90Fe10PROBABILITY PROBABILITY OF OF OCCURRENCE KIND PROBABILITY OF OCCURRENCE OF SHAPE OF 2ND OCCURRENCE OF OF ANOMALY NON- STRIPPING IN CRACK IN 2ND IN 2ND MAGNETIC 2ND MAGNETIC INSULATING MAGNETIC LAYER LAYER (%) LAYER (%) LAYER (%) NONE 68 61 56 Ti (30 nm) 1 1 0 Ta (30 nm) 1 0 0 Cr (30 nm) 2 1 0 - In each case of Co74Fe23Cu3, Co72Fe24MO4, Co77Fe19B4, and Co90Fe10, the probability of occurrence of wrong has 50% to 70% level in a case of using no second
non-magnetic layer 24 and is high probability of occurrence of wrong although it is not high in comparison with a case of the above-mentioned two-layer film made of nickel-iron (NiFe)/cobalt-iron-nickel (CoFeNi) or the above-mentioned single-layer film made of cobalt-nickel-iron (CoNiFe). However, by using, as the secondnon-magnetic layer 24, a lamina made of metal selected from titanium (Ti), tantalum (Ta), and chromium (Cr) of a thickness of 30 nm in any case, the probability of occurrence of wrong is lowered to several % or less. It is understood that the secondnon-magnetic layer 24 is made of one selected from titanium (Ti), tantalum (Ta), and chromium (Cr) has the wrong occurrence resist effect not only in the two-layer film made of nickel-iron (NiFe)/cobalt-iron-nickel (CoFeNi) or the single-layer film made of cobalt-iron-nickel (CoFeNi) but also in using any one of cobalt-iron-copper (CoFeCu), cobalt-iron-molybdenum (CoFeMo), cobalt-iron-boron (CoFeB), and cobalt-iron (CoFe). - Although examination is now not made, it seems that it has similar effect in a case of a multi-layer film obtained by combining nickel-iron (NiFe) with any one of cobalt-iron-copper (CoFeCu), cobalt-iron-molybdenum (CoFeMo), cobalt-iron-boron (CoFeB), or cobalt-iron (CoFe).
- It is thought that there are two effects as the wrong resist effect in the first
non-magnetic layer 22 and in the secondnon-magnetic layer 24. A first effect is an effect to improve adhesion between themagnetic separation layer 13 and the firstconductive layer 23 or between the second insulatinglayer 20 and the secondconductive layer 25 because the firstnon-magnetic layer 22 lies between themagnetic separation layer 13 and the firstconductive layer 23 or the secondnon-magnetic layer 24 lies between the second insulatinglayer 20 and the secondconductive layer 25. A second effect is an effect to reduce stress in the firstconductive layer 23/the firstmagnetic layer 16 or in the secondconductive layer 25/the secondmagnetic layer 21 because the firstnon-magnetic layer 22 is adjacent to the firstconductive layer 23/the firstmagnetic layer 16 or the secondnonmagnetic layer 24 is adjacent to the secondconductive layer 25/the secondmagnetic layer 21. - Sixthly, examination is made about whether the wrong occurrence resist effect is caused by an adhesion improvement effect or a stress reduction effect.
- At first, the present co-inventors examined how large is the adhesion improvement effect by using the non-magnetic layer. A lamina made of metal selected from titanium (Ti), tantalum (Ta), and chromium (Cr) having a thickness of 10 nm is formed on a glass substrate as a non-magnetic layer by sputtering, a layer made of Ni80Fe20 having a thickness of 100 nm is formed on the non-magnetic layer as a conductive layer by sputtering, and a layer made of Co65Fe23Ni12 having a thickness of 2 μm is formed on the conductive layer as a magnetic layer by plating using a stress relaxation agent. In order to make a comparison, a sample with no non-magnetic layer is made. A reason that the stress relaxation agent is used on making the magnetic layer by plating which is different from an actual process is that stripping of the magnetic layer instantly occurs in a case that the non-magnetic layer is not formed if the stress relaxation agent is not used and it is therefor impossible to measure adhesion of a compared sample.
- For each of four samples made in the above-mentioned manner, adhesion is measured by using an acoustic emission method. The acoustic emission method is a method comprising the steps of applying warp stress to a substrate on which a stress measured film is formed and of detecting, as adhesion, a stress at which separation occurs by detecting the separation of the film from the substrate by sound. Although the separation of the film caused by applying of the stress occurs in a width of a level of stress, the adhesion is herein defined as the stress when the separation occurs most frequently. The adhesion in this case is shown in Table 17.
TABLE 17 ADHESION (GPa) No non-magnetic layer 9 Ti (10 nm) 58 Ta (10 nm) 62 Cr (10 nm) 41 - In a case of using no non-magnetic layer, the adhesion is 9 GPa and is small. In comparison with this, in a case of using a lamina made of metal selected from titanium (Ti), tantalum (Ta), and chromium (Cr) as the nonmagnetic layer, the adhesion is drastically large. Among three types of the non-magnetic layer, the adhesion is about same level in titanium (Ti) and tantalum (Ta) and the adhesion in chromium (Cr) is smaller than that by little.
- Although a portion corresponding to the substrate in this experimentation is made of a material except for the glass such as the
magnetic separation layer 13 or the second insulatinglayer 20, it seems that the adhesion improvement effect caused by presence of the non-magnetic layer is present in such a case. - Subsequently, the present co-inventors examines the stress reduction effect caused by use of the non-magnetic layer. A lamina made of metal selected from titanium (Ti), tantalum (Ta), and chromium (Cr) having a thickness of 10 nm is formed on a substrate having a known amount of warp as a non-magnetic layer by sputtering, a layer made of Ni80Fe20 having a thickness of 100 nm is formed on the non-magnetic layer as a conductive layer by sputtering, and a layer made of Co65Fe23Ni12 having a thickness of 0.3 μm is formed on the conductive layer as a magnetic layer by plating with no stress relaxation agent. In order to make a comparison, a sample with no non-magnetic layer is formed. A reason that the magnetic layer has a thin thickness to 0.3 μm which is different from an actual process is that separation of the magnetic immediately occurs in a case of forming no non-magnetic layer if a thickness of the magnetic layer is thick and it is therefore impossible to measure the adhesion of a compared sample.
- For four types of samples made in the manner which is described above, the amount of warp in a Si substrate is measured to calculate stress in the layer. Measured results are shown Table 18.
TABLE 18 INTERNAL STRESS (MPa) No non-magnetic layer 2560 Ti (10 nm) 1250 Ta (10 nm) 900 Cr (10 nm) 750 - In a case of using no non-agnetic layer, the interval stress is equal to 2560 MPa and is large. In comparison with this, in a case of using a lamina made of metal selected from titanium (Ti), tantalum (Ta), and chromium (Cr) as the non-magnetic layer, the internal stress is drastically decreased. It seems that titanium (Ti) and tantalum (Ta) have an effect so as to decrease the internal stress in a cobalt-iron-nickel (CoFeNi) plating layer formed thereon. Among three types of non-magnetic layers, the internal stress becomes small in order to titanium (Ti), tantalum (Ta), and chromium (Cr).
- In the manner in the actual magnetic head as understood from that there is a little wrong occurrence in chromium (Cr) in comparison with that there is no wrong occurrence in tantalum (Ta) and titanium (Ti) when the first non-magnetic layer has a thickness of 4 nm in a case of comparing, for example, Tables 1, 2, and 3, it tends to have a larger wrong occurrence resist effect in a case of using a lamina made of metal selected from tantalum (Ta) and titanium (Ti) as the first and the second
non-magnetic layers non-magnetic layers - In addition, the present co-inventors considered that it seems that one of reasons for reduction of the stress in the magnetic layer by using a film made of one selected from titanium (Ti), tantalum (Ta), and chromium (Cr) as the non-magnetic layer may be an effect caused by addition of stresses in the non-magnetic layer, in the conductive layer, and in the magnetic layer. In order to check this, the present co-inventors measured stress in a single-layer film made of metal selected from titanium (Ti), tantalum (Ta), and chromium (Cr). Table 19 shows internal stress in the single-layer film made of metal selected from titanium (Ti), tantalum (Ta), and chromium (Cr) in a case where its thickness is equal to 50 nm.
TABLE 19 INTENAL STRESS (MPa) Ti (50 nm) −210 Ta (50 nm) −530 Cr (50 nm) −420 - In a case of each of titanium (Ti), tantalum (Ta), and chromium (Cr), the internal stress has a negative (minus) value. Accordingly, in a total of the non-magnetic layer, the conductive layer, and the magnetic layer, it is anticipated that a total stress value obtained by adding respective stress values may become smaller in each case than that in a case of no non-magnetic layer and matches with a tendency of the results shown in Table 18. While negative stress values in the single-layer film are, in descending order, tantalum (Ta), chromium (Cr), and titanium (Ti), namely,
Ta>Cr>Ti,
total stress values in the non-magnetic layer, the conductive layer, and the magnetic layer are, in descending order, titanium (Ti), tantalum (Ta), and chromium (Cr), namely,
Ti>Ta>Cr. - Accordingly, larger ones of the negative stress in the single-layer film are not always smaller ones of the total stress values. This means that a reason that the non-magnetic layer can reduce the stress of the magnetic layer is not always that the negative stress in the single-layer of the non-magnetic layer is merely added. A future problem is to examine what is this reason.
- It is understood that to use, as the non-magnetic layer, a material (metal) having the negative stress value has an effect on reduction of the total stress value as shown in data of Tables 18 and 19. Accordingly, the stress relaxation effect for the magnetic layer may be expected in a case of using, as the non-magnetic layer, a single-layer film made of a material (metal) having the negative stress although the material (metal) is a material (metal) except for titanium (Ti), tantalum (Ta), and chromium (Cr). Thereupon, as regards several types of material (metal), the present co-inventors formed a single-layer film having a thickness of 50 nm on a glass substrate and measured stress of the single-layer film. As regards the materials (metals) having the negative stress value thereamong, the present co-inventors measured adhesion of the single-layer film having the thickness of 50 nm formed on the glass substrate using an acoustic emission method and obtained measured values shown in Table 20.
TABLE 20 TYPE OF INTERNAL STRESS MATERIAL (MPa) ADHESION (GPa) Y −350 32 Zr −320 33 Hf −230 34 V −390 38 Nb −280 36 Mo −370 31 W −280 36 Mn −220 2 Re −150 1 - In a case of any material, an effect for reducing a total stress in the magnetic layer may be expected because any material (metal) has the internal stress of a negative value. However, inasmuch as manganese (Mn) and rhenium (Re) have the adhesion less than 10 GPa although its film is formed on a clean glass substrate, the wrong occurrence resist effect cannot be expected in a state where the magnetic head is actually manufactured. Inasmuch as yttrium (Y), zirconium (Zr) hafnium (Hf), vanadium CV), niobium (Nb) molybdenum (Mo), and wolfram (tungsten) (W) have adhesion of a level of 30 GPa although its adhesion is not higher than that in titanium (Ti), tantalum (Ta), and chromium (Cr), they are likely candidates of the material (metal) for the first and the second
non-magnetic layers - While this invention has thus far been described in conjunction with few preferred embodiments thereof, it will now be readily possible for those skilled in the art to put this invention into various other manners. For example, the magnetic layer (first magnetic sub-layer) comprising the essential elements of cobalt (Co) nickel (Ni), and iron (Fe) may have a crystal structure selected from the group consisting of a face-centered cubic (fcc) structure, a body-centered cubic (bcc) structure, and a mixed crystal with a face-centered cubic (fcc) structure and a body-centered cubic (bcc) structure. The magnetic layer (first magnetic sub-layer) comprising the essential elements of cobalt (Co), nickel (Ni), and iron (Fe) may have a crystal particle diameter which is not more than 20 nm.
Claims (49)
1. A magnetic head comprising:
a substrate having a principal surface;
an antistripping layer formed on the principal surface of said substrate;
a first magnetic layer formed on said antistripping layer;
a recording gap layer formed on said first magnetic layer;
an insulating layer formed on said recording gap layer except for a pole tip region;
a write coil enclosed with and insulated by said insulating layer; and
a second magnetic layer formed on said insulating layer and on the pole tip region of said recording gap layer.
2. A magnetic head as claimed in claim 1 , wherein said antistripping layer comprises:
a non-magnetic layer formed on the principal surface of said substrate; and
a conductive layer formed on said non-magnetic layer, said first magnetic layer being formed on said conductive layer.
3. A magnetic head as claimed in claim 2 , wherein said non-magnetic layer comprises a lamina made of metal selected from the group consisting essentially of titanium (Ti), tantalum (Ta), chromium (Cr), yttrium (Y), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), molybdenum (Mo), and tungsten (W).
4. A magnetic head as claimed in claim 3 , wherein said lamina comprises one selected from a single-layer film, a multi-layer film, and an alloy film.
5. A magnetic head as claimed in claim 2 , wherein said non-magnetic layer is made of a non-magnetic material of titanium (Ti), said non-magnetic layer having a thickness between 2 nm and 10 nm, both inclusive.
6. A magnetic head as claimed in claim 2 , wherein said non-magnetic layer is made of a non-magnetic material of tantalum (Ta), said non-magnetic layer having a thickness between 1.5 nm and 10 m, both inclusive.
7. A magnetic head as claimed in claim 2 , wherein said non-magnetic layer is made of a non-magnetic material of chromium (Cr), said non-magnetic layer having a thickness between 2.5 nm and 10 nm, both inclusive.
8. A magnetic head as claimed in claim 2 , wherein said non-magnetic layer comprises a lamina made of metal having a tensile stress.
9. A magnetic head as claimed in claim 8 , wherein said lamina comprises one selected from a single-layer film, a multi-layer film, and an alloy film.
10. A magnetic head as claimed in claim 1 , wherein said first magnetic layers comprise a lamina selected from the group consisting essentially of cobalt-iron-nickel (CoFeNi), cobalt-iron-copper (CoFeCu), cobalt-iron-molybdenum (CoFeMo), cobalt-iron-boron (CoFeB), and cobalt-iron (CoFe).
11. A magnetic head as claimed in claim 10 , wherein said lamina comprises alloy.
12. A magnetic head as claimed in claim 10 , wherein said lamina comprises one selected from a single-layer film and a multi-layer film.
13. A magnetic head as claimed in claim 10 , wherein said lamina comprises a mixture.
14. A magnetic head as claimed in claim 13 , wherein said mixture further comprises an additional alloy consisting essentially of nickel-iron (NiFe).
15. A magnetic head as claimed in claim 1 , wherein said first magnetic layer comprises essential elements of cobalt (Co), nickel (Ni), and iron (Fe)
16. A magnetic head as claimed in claim 1 , wherein said first magnetic layer comprises a laminated structure of a first magnetic sub-layer comprising essential elements of cobalt (Co), nickel (Ni), and iron (Fe) and a second magnetic sub-layer comprising essential elements of nickel (Ni) and iron (Fe), said first magnetic sub-layer being disposed near to said recording gap layer.
17. A magnetic head as claimed in claim 15 , wherein said first magnetic layer has a crystal structure of a face-centered cubic (fcc) structure.
18. A magnetic head as claimed in claim 15 , wherein said first magnetic layer has a crystal structure of a body-centered cubic (bcc) structure.
19. A magnetic head as claimed in claim 15 , wherein said first magnetic layer has a crystal structure of a mixed crystal with a face-centered cubic (fcc) structure and a body-centered cubic (bcc) structure.
20. A magnetic head as claimed in claim 16 , wherein said first magnetic sub-layer has a crystal structure of a face-centered cubic (fcc) structure.
21. A magnetic head as claimed in claim 16 , wherein said first magnetic sub-layer has a crystal structure of a body-centered cubic (bcc) structure.
22. A magnetic head as claimed in claim 16 , wherein said first magnetic sub-layer has a crystal structure of a mixed crystal with a face-centered cubic (fcc) structure and a body-centered cubic (bcc) structure.
23. A magnetic head as claimed in claim 15 , wherein said first magnetic layer has a crystal particle diameter which is not more than 20 nm.
24. A magnetic head as claimed in claim 16 , wherein said first magnetic sub-layer has a crystal particle diameter which is not more than 20 nm.
25. A magnetic head as claimed in claim 1 , wherein a combination of said insulating layer and said write coil is made by successively laminating a first insulating layer, said write coil, and a second insulating layer on said recording gap layer, said second insulating layer having a periphery end on a side of an air bearing surface (ABS) that is close to said air bearing surface than a periphery end of said first insulating layer.
26. A magnetic head as claimed in claim 1 , wherein said substrate comprises:
an insulating substrate having a principal surface;
a first magnetic shield layer formed on the principal surface of said insulating substrate;
a magnetic separation layer formed on said first magnetic shield layer, said magnetic separation layer being made of an insulator; and
a magneto-resistive effective element sandwiched in said magnetic separation layer, said antistripping layer being formed on said magnetic separation layer, said first magnetic layer doubling as a second magnetic shield layer.
27. A process for manufacturing a magnetic head as claimed in claim 1 , wherein said first magnetic layers is made by electroplating.
28. A process for manufacturing a magnetic head as claimed in claim 15 , wherein said first magnetic layer is made by electroplating.
29. A process for manufacturing a magnetic head as claimed in claim 16 , wherein said first magnetic sub-layer is made by electroplating.
30. A process for manufacturing a magnetic head as claimed in claim 15 , wherein said first magnetic layer is made by electroplating with a plating bath including no stress relieving agent.
31. A process for manufacturing a magnetic head as claimed in claim 16 , wherein said first magnetic sub-layer is made by electroplating with a plating bath including no stress relieving agent.
32. A magnetic storage unit comprising a magnetic head as claimed in claim 1 and a magnetic recording medium which has a coercive force of 278600 A/m or more and which has a recording density of 10 gigabits/inch2 or more.
33. A magnetic storage unit comprising a magnetic head as claimed in claim 2 and a magnetic recording medium which has a coercive force of 278600 A/m or more and which has a recording density of 10 gigabits/inch2 or more.
34. A magnetic storage unit comprising a magnetic head as claimed in claim 15 and a magnetic recording medium which has a coercive force of 278600 A/m or more and which has a recording density of 10 gigabits/inch2 or more.
35. A magnetic storage unit comprising a magnetic head as claimed in claim 25 and a magnetic recording medium which has a coercive force of 278600 A/m or more and which has a recording density of 10 gigabits/inch2 or more.
36. A magnetic storage unit comprising a magnetic head as claimed in claim 26 and a magnetic recording medium which has a coercive force of 278600 A/m or more and which has a recording density of 10 gigabits/inch2 or more.
37-62. (canceled)
63. A process for manufacturing a magnetic head, the magnetic head comprising:
a substrate having a principal surface;
a first magnetic layer formed on said substrate;
a recording gap layer formed on said first magnetic layer;
an insulating layer formed on said recording gap layer except for a pole tip region;
a write coil enclosed with and insulated by said insulating layer;
an antistripping layer formed on said insulating layer and on the pole tip region of said recording zap layer; and
a second magnetic layer formed on said antistripping layer;
wherein said second magnetic layer is made by electroplating.
64. A process for manufacturing a magnetic head, the magnetic head comprising:
a substrate having a principal surface;
a first magnetic layer formed on said substrate;
a recording gap layer formed on said first magnetic layer;
an insulating layer formed on said recording gap layer except for a pole tip region;
a write coil enclosed with and insulated by said insulating layer;
an antistripping layer formed on said insulating layer and on the pole tip region of said recording gap layer; and
a second magnetic layer formed on said antistripping layer;
wherein said magnetic layer comprises essential elements of cobalt (Co), nickel (Ni) and iron (Fe); and
wherein said second magnetic layer is made by electroplating.
65. A process for manufacturing a magnetic head, the magnetic head comprising:
a substrate having a principal surface;
a first magnetic layer formed on said substrate;
a recording gap layer formed on said first magnetic layer;
an insulating layer formed on said recording gap layer except for a pole tip region;
a write coil enclosed with and insulated by said insulating layer;
an antistripping layer formed on said insulating layer and on the pole tip region of said recording gap layer; and
a second magnetic layer formed on said antistripping layer;
wherein said second magnetic layer comprises a laminated structure of a first magnetic sub-layer comprising essential elements of cobalt (Co), nickel (Ni), and iron (Fe) and a second magnetic sublayer comprising essential elements of nickel (Ni) and iron (Fe), said first magnetic sub-layer being disposed near to said recording gap layer; and
wherein said first magnetic sub-layer is made by electroplating.
66. A process for manufacturing a magnetic head, the magnetic head comprising:
a substrate having a principal surface;
a first magnetic layer formed on said substrate;
a recording gap layer formed on said first magnetic layer;
an insulating layer formed on said recording gap layer except for a pole tip region;
a write coil enclosed with and insulated by said insulating layer;
an antistripping layer formed on said insulating layer and on the pole tip region of said recording gap layer; and
a second magnetic layer formed on said antistripping layer;
wherein said wherein said magnetic layer comprises essential elements of cobalt (Co), nickel (Ni), and iron (Fe); and
wherein said second magnetic layer is made by electroplating with a plating bath including no stress relieving agent.
67. A process for manufacturing a magnetic head, the magnetic head comprising
a substrate having a principal surface;
a first magnetic layer formed on said substrate;
a recording gap layer formed on said first magnetic layer;
an insulating layer formed on said recording gap layer except for a pole tip region;
a write coil enclosed with and insulated by said insulating layer;
an antistripping layer formed on said insulating layer and on the pole tip region of said recording gap layer; and
a second magnetic layer formed on said antistripping layer;
wherein said second magnetic layer comprises a laminated structure of a first magnetic sub-layer comprising a laminated structure of a first magnetic sub-layer comprising essential elements of cobalt (Co), nickel (Ni), and iron (Fe), and a second magnetic sub-layer comprising essential elements of nickel (Ni) and iron (Fe), said first magnetic sub-layer being disposed near to said recording gap layer; and
wherein said first magnetic sub-layer is made by electroplating with a plating bath including no stress relieving agent.
68.-98. (canceled)
99. A process for manufacturing a magnetic head, the magnetic head comprising:
a substrate having a principal surface;
a first antistripping layer formed on the principal surface of said substrate;
a first magnetic layer formed on said first antistripping layer;
a recording gap layer formed on said first magnetic layer;
an insulating layer formed on said recording gap layer except for a pole tip region;
a write coil enclosed with and insulated by said insulating layer;
a second antistripping layer formed on said insulating layer and on the pole tip region of said recording gap layer:
and a second magnetic layer formed on said second antistripping layer:
wherein each of said first and said second magnetic layers is made by electroplating.
100. A process for manufacturing a magnetic head, the magnetic head comprising:
a substrate having a principal surface;
a first antistripping layer formed on the principal surface of said substrate;
a first magnetic layer formed on said first antistripping layer;
a recording gap layer formed on said first magnetic layer;
an insulating layer formed on said recording gap layer except for a pole tip region;
a write coil enclosed with and insulated by said insulating layer;
a second antistripping layer formed on said insulating layer and on the pole tip region of said recording gap layer;
and a second magnetic layer formed on said second antistripping layer,
wherein each of said first and said second magnetic layers comprises essential elements of cobalt (CO), nickel (Ni), and iron (Fe), and
wherein each of said first and said second magnetic layers is made by electroplating.
101. A process for manufacturing a magnetic head, the magnetic head comprising:
a substrate having a principal surface;
a first antistripping layer formed on the principal surface of said substrate
a first magnetic layer formed on said first antistripping layer;
a recording gap layer formed on said first magnetic layer;
an insulating layer formed on said recording gap layer except for a pole tip region;
a write coil enclosed with and insulated by said insulating layer;
a second antistripping layer formed on said insulating layer and on the pole tip region of said recording gap layer; and
a second magnetic layer formed on said second antistripping layer,
wherein each of said first and said second magnetic layers comprises a laminated structure of a first magnetic sub-layer comprising essential elements of cobalt (Co), nickel (Ni), and iron (Fe) and a second magnetic sub-layer comprising essential elements of nickel (Ni) and iron (Fe), said first magnetic sub-layer being disposed near to said recording gap layer, and
wherein said first magnetic sub-layer is made by electroplating.
102. A process for manufacturing a magnetic head, the magnetic head comprising:
a substrate having a principal surface;
a first antistripping layer formed on the principal surface of said substrate;
a first magnetic layer formed on said first antistripping layer;
a recording gap layer formed on said first magnetic layer;
an insulating layer formed on said recording gap layer except for a pole tip region;
a write coil enclosed with and insulated by said insulating layer;
a second antistripping layer formed on said insulating layer and on the pole tip region of said recording gap layer; and
a second magnetic layer formed on said second antistripping layer,
wherein each of said first and said second magnetic layers comprises essential elements of cobalt (Co), nickel (Ni), and iron (Fe), and
wherein each of said first and said second magnetic layers is made by electroplating with a plating bath including no stress relieving agent.
103. A process for manufacturing a magnetic head, the magnetic head comprising:
a substrate having a principal surface;
a first antistripping layer formed on the principal surface of said substrate;
a first magnetic layer formed on said first antistripping layer;
a recording gap layer formed on said first magnetic layer;
an insulating layer formed on said recording gap layer except for a pole tip region;
a write coil enclosed with and insulated by said insulating layer;
a second antistripping layer formed on said insulating layer and on the pole tip region of said recording gap layer; and
a second magnetic layer formed on said second antistripping layer,
wherein each of said first and said second magnetic layers comprises a laminated structure of a first magnetic sub-layer comprising essential elements of cobalt (Co), nickel (Ni), and iron (Fe) and a second magnetic sub-layer comprising essential elements of nickel (Ni) and iron (Fe), said first magnetic sub-layer being disposed near to said recording gap layer, and
wherein said first magnetic sub-layer is made by electroplating with a plating bath including no stress relieving agent.
104-108. (canceled)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/329,919 US20060119982A1 (en) | 1999-09-30 | 2006-01-10 | Magnetic head having an antistripping layer for preventing a magnetic layer from stripping |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27856799 | 1999-09-30 | ||
JP2000-145875 | 2000-05-18 | ||
JP2000145875 | 2000-05-18 | ||
JP11-278567 | 2000-05-18 | ||
US67259700A | 2000-09-28 | 2000-09-28 | |
US10/113,608 US6791794B2 (en) | 2000-09-28 | 2002-04-01 | Magnetic head having an antistripping layer for preventing a magnetic layer from stripping |
US10/815,069 US7023659B2 (en) | 1999-09-30 | 2004-03-31 | Magnetic head having an antistripping layer for preventing a magnetic layer from stripping |
US11/329,919 US20060119982A1 (en) | 1999-09-30 | 2006-01-10 | Magnetic head having an antistripping layer for preventing a magnetic layer from stripping |
Related Parent Applications (1)
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US10/815,069 Division US7023659B2 (en) | 1999-09-30 | 2004-03-31 | Magnetic head having an antistripping layer for preventing a magnetic layer from stripping |
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US20060119982A1 true US20060119982A1 (en) | 2006-06-08 |
Family
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Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
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US10/113,608 Expired - Lifetime US6791794B2 (en) | 1999-09-30 | 2002-04-01 | Magnetic head having an antistripping layer for preventing a magnetic layer from stripping |
US10/815,069 Expired - Lifetime US7023659B2 (en) | 1999-09-30 | 2004-03-31 | Magnetic head having an antistripping layer for preventing a magnetic layer from stripping |
US11/329,919 Abandoned US20060119982A1 (en) | 1999-09-30 | 2006-01-10 | Magnetic head having an antistripping layer for preventing a magnetic layer from stripping |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/113,608 Expired - Lifetime US6791794B2 (en) | 1999-09-30 | 2002-04-01 | Magnetic head having an antistripping layer for preventing a magnetic layer from stripping |
US10/815,069 Expired - Lifetime US7023659B2 (en) | 1999-09-30 | 2004-03-31 | Magnetic head having an antistripping layer for preventing a magnetic layer from stripping |
Country Status (1)
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US (3) | US6791794B2 (en) |
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US20070242391A1 (en) * | 2006-04-14 | 2007-10-18 | Tdk Corporation | Magneto-resistive element, thin film magnetic head, magnetic head device, and magnetic recording/reproducing apparatus |
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US8649124B2 (en) * | 2010-12-13 | 2014-02-11 | Seagate Technology Llc | Double shell writers |
US20130321955A1 (en) * | 2012-02-03 | 2013-12-05 | Seagate Technology Llc | Low-Recess Write Pole Coil Near Shield at Media-Facing Surface |
US8873201B2 (en) * | 2012-02-03 | 2014-10-28 | Seagate Technology Llc | Low-recess write pole coil near shield at media-facing surface |
US20140106182A1 (en) * | 2012-10-14 | 2014-04-17 | Headway Technologies, Inc. | High Coercivity Magnetic Film for Use as a Hot Seed in a Magnetic Write Head and Method to Grow It |
US9053713B2 (en) * | 2012-10-14 | 2015-06-09 | Headway Technologies, Inc. | High coercivity magnetic film for use as a hot seed in a magnetic write head and method to grow it |
Also Published As
Publication number | Publication date |
---|---|
US20040190198A1 (en) | 2004-09-30 |
US7023659B2 (en) | 2006-04-04 |
US20030058576A1 (en) | 2003-03-27 |
US6791794B2 (en) | 2004-09-14 |
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Legal Events
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