US20040226603A1 - Optical fiber assembly - Google Patents
Optical fiber assembly Download PDFInfo
- Publication number
- US20040226603A1 US20040226603A1 US10/870,737 US87073704A US2004226603A1 US 20040226603 A1 US20040226603 A1 US 20040226603A1 US 87073704 A US87073704 A US 87073704A US 2004226603 A1 US2004226603 A1 US 2004226603A1
- Authority
- US
- United States
- Prior art keywords
- optical energy
- recited
- photodetector
- assembly
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N1/00—Electrotherapy; Circuits therefor
- A61N1/16—Screening or neutralising undesirable influences from or using, atmospheric or terrestrial radiation or fields
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B11/00—Communication cables or conductors
- H01B11/02—Cables with twisted pairs or quads
- H01B11/06—Cables with twisted pairs or quads with means for reducing effects of electromagnetic or electrostatic disturbances, e.g. screens
- H01B11/10—Screens specially adapted for reducing interference from external sources
- H01B11/1058—Screens specially adapted for reducing interference from external sources using a coating, e.g. a loaded polymer, ink or print
- H01B11/1083—Screens specially adapted for reducing interference from external sources using a coating, e.g. a loaded polymer, ink or print the coating containing magnetic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/007—Thin magnetic films, e.g. of one-domain structure ultrathin or granular films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
Definitions
- An optical fiber assembly comprised of a photodetector for converting electrical energy to optical energy, transferring such optical energy to a desired site, and then converting such optical energy back into electrical energy.
- the device of U.S. Pat. No. 5,549,642 is comprised of pacemaker/cardioverter/defillibrator 110 and, connected thereto, lead bodies 115 / 116 , each of which is comprised of a conductive material (such as, e.g., copper).
- lead bodies 115 / 116 each of which is comprised of a conductive material (such as, e.g., copper).
- These lead bodies whose primary function is to conduct electricity to an implanted device near or in a heart, also act both as receiving and transmitting antennas. Consequently, when a patient in whom these leads 115 / 116 have been implanted is subjected to nuclear magnetic resonance imaging diagnosis, unwanted electromagnetic radiation will be absorbed, transformed, and/or emitted by leads 115 / 116 .
- a device for providing a combined defibrillation therapy comprising: pacing electrode means for delivering pacing energy pulse bursts to a first chamber of a patient's heart; defibrillation electrode means for delivering high energy pulses to said first chamber of said heart; means for detecting fibrillation in said first chamber of said heart; means for triggering delivery of said combined defibrillation therapy in response to detection of fibrillation in said first chamber of said heart; pacing pulse generator means responsive to said triggering means for delivering pacing energy pulse bursts having a frequency of 20 Hz or greater to said pacing electrode means; defibrillation pulse generator means responsive to said triggering means for generating said high energy pulses for delivering a high energy pulse to said defibrillation electrode means in conjunction with each delivery of
- Pat. No. 5,713,924 also contains conductive RAJSVC lead 140 , and CS lead 130 , each of which is comprised of conductive material, each of which serves to convey electricity to a device within or near a heart, and each of which also has the undesired property of acting as an emitting and/or receiving antenna.
- a shielded assembly comprised of a means for generating an electric current, means for converting said electric current to optical energy, means for converting said optical energy to electrical energy, and means for delivering electrical energy to a load, wherein said means for delivering said electrical energy to a load is coated with a composition comprised of at least about 50 weight percent of nanomagnetic material.
- FIG. 1 is a schematic representation of one optical fiber assembly of the invention
- FIG. 1A is a schematic representation of another optical fiber assembly of the invention.
- FIG. 2 is a partial schematic view of a portion of the optical fiber assembly of FIG. 1;
- FIGS. 3A and 3B are sectional views, taken along lines 3 - 3 ′ of FIG. 2, of the optical fiber assembly of FIG. 1;
- FIG. 3C is a perspective view of the light emitting assembly of the optical fiber assembly of FIG. 1;
- FIG. 3D is a partial perspective view of the proximal end of the optical fiber assembly of FIG. 1;
- FIG. 4 is a perspective view of another optical fiber assembly of the invention.
- optical fiber assembly 10 is comprised of an electrical power source 12 that preferably delivers direct current; in the embodiment depicted, electrical power source 12 has, disposed about it, a layer of nanomagnetic material 15 .
- the nanomagnetic material may be contiguous with the power source 12 ; or a layer of non-nanomagnetic material may be disposed between the power source 12 and the nanomagnetic material layer 15 .
- the layer of nanomagnetic material 15 in one embodiment, is comprised of at least about 50 weight percent of nanomagnetic material. In another embodiment, the layer of nanomagnetic material 15 is comprised of at least about 90 weight percent of nanomagnetic material.
- the power source 12 may, e.g., be a battery, a fuel cell, and the like.
- the power source 12 is a lithium-iodine or a lithium-bromine battery.
- the lithium-halogen batteries patented by Wilson Greatbatch. Reference may be had, e.g., to U.S. Pat. No. 4,385,439 (lithium-iodine cell), U.S. Pat. Nos. 4,203,201; 4,128,703; 4,307,509 (lithium-chlorine cell); U.S. Pat. Nos. 4,210,708; 4,166,158; 4,164,070 (lithium bromine battery); U.S.
- leads 14 and 16 the power from power source 12 is conveyed to leads 14 and 16 to light emitting device 18 .
- the leads 14 and 16 should be relatively short. Thus, e.g., leads 14 and 16 are preferably no longer than about 1 centimeter. In one embodiment, leads 14 and 16 are less than about 1 millimeter.
- each of the leads 14 and 16 is shielded by a layer 15 of nanomagnetic material that may either be contiguous with or not contiguous with the leads 14 and 16 .
- each of the leads 32 and/or 34 are also similarly shielded by a layer 15 of nanomagnetic material.
- leads 14 and/or 16 , and/or battery 12 and/or leads 32 and/or 34 , and/or controller 24 are coated with nanomagnetic material 15 which dissipates any magnetic fields produced by very high frequency radiation.
- this nanomagnetic material absorbs electromagnetic radiation.
- such nanomagnetic material contains iron, cobalt, and/or nickel.
- one may utilize a magnetically shielded conductor assembly comprised of a first conductor disposed within an insulating matrix, and a layer comprised of nanomagentic material disposed around said first conductor, provided that such nanomagnetic material is not contiguous with said first conductor, wherein: (a) said first conductor has a resistively at 20 degrees Centigrade of from about 1 to about 100 micro ohm-centimeters, (b) said insulating matrix is comprised of nana-sized particles wherein at least about 90 weight percent of said particles have a maximum dimension of from about 10 to about 100 nanometers; (c) said insulating matrix has a resistively of from about 1 ⁇ 10 9 to about 1 ⁇ 10 13 ohm-centimeter; (d) said nanomagnetic material has an average particle size of less than about 100 nanometers; (e) said layer of nanmagnetic material has a saturation magnetization of from about 200 to about 26,000 Gauss and a thickness of
- nanomagnetic material is magnetic material which has an average particle size of less than 100 nanometers and, preferably, in the range of from about 2 to 50 nanometers.
- the nanomagnetic materials may be, e.g., nano-sized ferrites such as, e.g., the nanomagnetic ferrites disclosed in U.S. Pat. No. 5,213,851, the entire disclosure of which is hereby incorporated by reference into this specification.
- This patent claims a process for coating a layer of ferritic material with a thickness of from about 0.1 to about 500 microns onto a substrate at a deposition rate of from about 0.01 to about 10 microns per minute per 35 square centimeters of substrate surface, comprising the steps of: (a) providing a solution comprised of a first compound and a second compound, wherein said first compound is an iron compound and said second compound is selected from the group consisting of compounds of nickel, zinc, magnesium, strontium, barium, manganese, lithium, lanthanum, yttrium, scandium, samarium, europium, terbium., dysprosium, holmium, erbium, ytterbium, lutetium, cerium, praseodymium, thulium, neodymium, gadolinium, aluminum, iridium, lead, chromium, gallium, indium, chromium, samarium, cobalt, titanium,
- the voltage required is about 5 volts, and the current required is about 10 milliamperes.
- direct current pulses are delivered with a pulse duration about 0.5 milliseconds and a separation between adjacent pulses of about 0.7 seconds (based upon a pulse rate of about 80 heart beats per minute).
- pulsed energy can be provided to the assembly by means of switch 20 , which is connected by line 22 to controller 24 .
- Information from the assembly 10 is fed to the controller 24 via line 26 .
- the controller may choose to open switch 20 and/or to close switch 20 at a rate or rates designed to produce the desired pulsed energy input to the heart 28 .
- the heart 28 receives electricity from distal end 30 of assembly 10 by means of line 32 .
- the heart 28 returns information to assembly 10 by means of line 34 , which is optically connected to a sensor 36 in or near such heart. Such information is conveyed through such line 34 , to line 26 , and then to controller 24 , wherein it is evaluated.
- the assembly 10 in one embodiment, is comprised of an optical fiber 38 which, preferably, is a low-loss optical fiber.
- the proximal end 40 of the optical fiber 38 is comprised of a platform 42 . Disposed on such platform 42 is emitter 18 .
- the platform 42 typically has a length 44 of less than about 200 microns, and preferably less than about 100 microns.
- the height 46 of platform 42 is generally less than about 100 microns, and more preferably less than about 50 microns.
- the aspect ratio of platform 42 , the ratio of its length 44 divided by its height 46 is generally greater than about 1.5.
- the emitter 18 is preferably a laser diode assembly that is grown on the platform 42 .
- a laser diode assembly may be grown on the platform 42 by conventional means.
- the same device can operate as either an LED or a laser diode, depending upon the amount of current delivered to the device. Below the threshold of the linear region, the device operates as an LED; above such threshold, the device operates as a laser diode.
- FIG. 13.33( a ) a gallium-aluminum-arsenic double heterojunction DFB laser structure is depicted; and a cross-sectional view of this device is presented in FIG. 13.33( b ).
- This device is an edge-emitting laser diode.
- the light-emitting laser diode 18 is preferably comprised of a multiplicity of layers of material, which are shown in better detail in FIG. 3B.
- edge-emitting laser diode 18 in the embodiment depicted, is comprised of active region 50 , from which light is emitted.
- this active region 50 is an InGaAsP material, such as the material depicted, e.g., in FIG. 3.15( b ) of the Agrawal text, supra.
- the active region 50 is preferably contiguous with the core 52 of the optical fiber 38 . This relationship is shown in different detail in FIGS. 3A and 3D.
- device 18 is comprised of base 54 , which preferably contains overdoped negative InP material; layer 56 , which preferably contains negative InP material; layer 58 , which contains positive InP material, layer 60 , which contains negative InP material; mesa layer 62 , which contains positive InP material, and contact 64 , which contains conductive material and makes electrical contact with lead 14 .
- base 54 which preferably contains overdoped negative InP material
- layer 56 which preferably contains negative InP material
- layer 58 which contains positive InP material
- layer 60 which contains negative InP material
- mesa layer 62 which contains positive InP material
- contact 64 which contains conductive material and makes electrical contact with lead 14 .
- edge-emitting laser diodes using other semicondcutive materials also may be constructed.
- the edge-emitting laser diode depicted in FIG. 3C is similar to the diode shown on page 147 of the aforementioned Jones book.
- the edge emitting laser diode 18 consists of four major layers.
- the first layer, layer 70 comprises positive GaAs:Ge material.
- the second layer, layer 72 comprises positive Al 0.3 Ga 0.7 As:Ge material.
- the third layer, layer 74 is a negative (active) layer and comprises Al 0.1 Ga 0.9 As material.
- the fourth layer, layer 76 is a negative layer comprising Al 0.3 Ga 0.7 As:Sn material.
- the edge-emitting laser diode in response to current delivered by power source 12 , will produce light whose intensity and duration varies with the intensity and duration of the electrical input signal(s). This light is then transmitted down the length of optical fiber 38 , through its core 52 .
- the optical fiber 38 preferably has a length 80 of less than about 12 inches when utilized in conjunction with a pacemaker.
- the fiber 38 preferably is flexible; and it is preferably biocompatible with living organisms in which it is implanted.
- the light beams 82 emitted from edge-emitting laser diode 18 travel to the distal end 30 of the fiber 38 , where they contact photodetector assembly 84 .
- the photodetector assembly 84 is adapted to convert photonic energy into electrical energy. It preferably is a photovoltaic sensor. Such photovoltaic sensors are well known to those skilled in the art. Reference may be had, e.g., to U.S. Pat. Nos. 6,274,860; 5,800,631; 5,508,205; 5,474,621; and the like. The entire disclosure of each of these United States patents is hereby incorporated by reference into this specification.
- U.S. Pat. No. 6,331,673 describes a solar cell module which responds to wavelengths over a wide spectrum.
- the photodetector 84 preferably has a peak response to photonic radiation in the wavelength range of from about 400 to about 1,600 nanometers; and the optical radiation 82 preferably is within such range and more preferably has a wavelength either from about 800 to about 900 nanometers, or from about 1250 to about 1400 nanometers, or from about 1500 to about 1600 nanometers. The use of one of these frequency ranges maximizes the efficiency of the process.
- 5,824,566 discloses a method for producing a photovoltaic device which contains a multiplicity of layers. As is the case with U.S. Pat. No. 6,331,773, the input to the photovoltaic device of this patent spans a relatively large range of wavelengths.
- FIG. 2 illustrates the construction of a typical photovoltaic detector 84 .
- detector 84 is comprised of 3 major layers of material.
- Layer 90 is a positive AlGaAs-containing material.
- Layer 92 is a positive GaAs material.
- Layer 94 is a negative GaAs material. Light contacting this detector 84 provides a difference of potential between points 86 and 88 .
- the electrical energy produced by photovoltaic device 84 is transmitted via line 32 to a pacemaker 100 .
- Information from such pacemaker is returned via line 34 to controller 24 in the manner described elsewhere in this specification.
- the return signal from line 34 stimulates a photodetector (not shown) to provide a reverse light pulse 102 which, when it contacts another photodetector (not shown) near the face 104 of the platform 42 , will cause a return electrical signal to be furnished to the controller 24 via line 26 .
- FIG. 1A depicts an arrangement similar to that depicted in FIG. 1, with the exception that the controller 24 is disposed nearer the distal end 30 of the fiber 38 than the proximal end 40 of such fiber. As will be apparent to those skilled in the art, this arrangement utilizes shorter signals paths than the arrangement depicted in FIG. 1.
- FIG. 2 is a sectional view of the assembly of FIG. 1.
- FIG. 4 is a perspective view of an optical fiber assembly 110 which is similar to the configuration depicted in FIG. 1 with the exception that the laser diode 18 is not contiguous with the core 52 of the optical fiber 38 .
- an intermediate region 112 is used to match the index of refraction of the laser diode 18 and the core 52 .
- the photodetector assembly 84 depends upon absorption of light in wavelength bands. Different materials respond best in different ranges of wavelengths. At page 140 of the Agrawal text, the wavelength dependence of the absorption coefficient for several semiconductor materials are shown. Thus, as will be apparent, as the material(s) within the detector 84 changes, the wavelength of the light emitted by emitter 18 also preferably changes to maximize the conversion efficiency. In order to effectuate such a change of emitted wavelengths, one may change the material used to construct emitter 18 .
- an index matching material 112 is disposed between the end of the optical fiber 38 and a separate photodetector 84 . Without such an intermediate material 112 , the air gap that would be present would decrease conversion efficiency.
- This guide presents a series of tables for semiconductor lasers which describes, for any particular desired wavelength, the output power, the threshold current, the laser mode, the rise time, the spectral width, the beam diverge, other special features, and the manufacturer. Thus, for any desired wavelength, one can choose the appropriate manufacturer(s) and the appropriate material(s).
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Health & Medical Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Radiology & Medical Imaging (AREA)
- General Health & Medical Sciences (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
- Animal Behavior & Ethology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Biomedical Technology (AREA)
- Semiconductor Lasers (AREA)
- Electrotherapy Devices (AREA)
Abstract
A shielded assembly that includes a power source for generating electricity, a device for converting the electricity into optical energy, a device for converting the optical energy into electrical energy, and a load connected to the electrical energy. In one embodiment, the assembly comprises nanomagnetic shielding particles.
Description
- This application is a continuation-in-part of applicants' co-pending patent application U.S. Ser. No. 10/336,088, filed on Jan. 3, 2003, which was a continuation of U.S. Ser. No. 10/054,407, filed on Jan. 22, 2002, now U.S. Pat. No. 6,506,972. The Ser. No. 10/054,407 application claimed priority based upon provisional patent application U.S. Ser. No. 60/346,968, filed on Jan. 9, 2002. The content of each of the aforementioned applications is hereby incorporated by reference.
- An optical fiber assembly comprised of a photodetector for converting electrical energy to optical energy, transferring such optical energy to a desired site, and then converting such optical energy back into electrical energy.
- In U.S. Pat. No. 5,549,642 of Xiaoyi Min et al., which is assigned to Medtronic, Inc., there is disclosed and claimed “An apparatus for delivering cardioversion pulses to the atrium of a patient's heart, comprising: means for sensing atrial tachyarrhythria; a first electrode means for location in the coronary sinus of said patient's heart; a second electrode means for location in the right ventricle of said patient's heart; a third electrode means for location in the right atrium/superior vena cava portion of said patient's heart; means for coupling said first electrode means to said second electrode means; an implantable high voltage pulse generator having a housing and coupled to said first, second and third electrode means and including means for delivering a cardioversion pulse between said first and second electrode means while coupled to one another and said third electrode means, in response to a sensed occurrence of atrial tachyarrhythmia.”
- The device of U.S. Pat. No. 5,549,642 is comprised of pacemaker/cardioverter/
defillibrator 110 and, connected thereto, lead bodies 115/116, each of which is comprised of a conductive material (such as, e.g., copper). These lead bodies, whose primary function is to conduct electricity to an implanted device near or in a heart, also act both as receiving and transmitting antennas. Consequently, when a patient in whom these leads 115/116 have been implanted is subjected to nuclear magnetic resonance imaging diagnosis, unwanted electromagnetic radiation will be absorbed, transformed, and/or emitted by leads 115/116. - U.S. Pat. No. 5,713,924 of Xiaoyi Min et al, which is also assigned to Medtronic, Inc., discloses and claims: “A device for providing a combined defibrillation therapy, comprising: pacing electrode means for delivering pacing energy pulse bursts to a first chamber of a patient's heart; defibrillation electrode means for delivering high energy pulses to said first chamber of said heart; means for detecting fibrillation in said first chamber of said heart; means for triggering delivery of said combined defibrillation therapy in response to detection of fibrillation in said first chamber of said heart; pacing pulse generator means responsive to said triggering means for delivering pacing energy pulse bursts having a frequency of 20 Hz or greater to said pacing electrode means; defibrillation pulse generator means responsive to said triggering means for generating said high energy pulses for delivering a high energy pulse to said defibrillation electrode means in conjunction with each delivery of a said pulse burst to said pacing electrode means.” The device of U.S. Pat. No. 5,713,924 also contains conductive RAJSVC lead140, and CS lead 130, each of which is comprised of conductive material, each of which serves to convey electricity to a device within or near a heart, and each of which also has the undesired property of acting as an emitting and/or receiving antenna.
- In order to avoid the problem of using leads with conductive materials, some have proposed the use of an optical fiber delivering optical energy which can be converted into electrical energy prior to being delivered to an implanted device. However, the devices which have been proposed utilizing such optical fiber generally have poor power conversion efficiency.
- It is an object of this invention to provide an optical fiber assembly that will convert electrical energy to optical energy, transfer such optical energy to a desired site, and then convert such optical energy back into electrical energy, all at relatively high overall conversion efficiency.
- In accordance with this invention, there is provided a shielded assembly comprised of a means for generating an electric current, means for converting said electric current to optical energy, means for converting said optical energy to electrical energy, and means for delivering electrical energy to a load, wherein said means for delivering said electrical energy to a load is coated with a composition comprised of at least about 50 weight percent of nanomagnetic material.
- The invention will be described by reference to the following drawings, in which like numerals refer to like elements, and in which:
- FIG. 1 is a schematic representation of one optical fiber assembly of the invention;
- FIG. 1A is a schematic representation of another optical fiber assembly of the invention;
- FIG. 2 is a partial schematic view of a portion of the optical fiber assembly of FIG. 1;
- FIGS. 3A and 3B are sectional views, taken along lines3-3′ of FIG. 2, of the optical fiber assembly of FIG. 1;
- FIG. 3C is a perspective view of the light emitting assembly of the optical fiber assembly of FIG. 1;
- FIG. 3D is a partial perspective view of the proximal end of the optical fiber assembly of FIG. 1; and
- FIG. 4 is a perspective view of another optical fiber assembly of the invention.
- The present invention will be described in connection with a preferred embodiment, however, it will be understood that there is no intent to limit the invention to the embodiment described. On the contrary, the intent is to cover all alternatives, modifications, and equivalents as may be included within the spirit and scope of the invention as defined by the appended claims.
- Referring to FIG. 1,
optical fiber assembly 10 is comprised of anelectrical power source 12 that preferably delivers direct current; in the embodiment depicted,electrical power source 12 has, disposed about it, a layer ofnanomagnetic material 15. The nanomagnetic material may be contiguous with thepower source 12; or a layer of non-nanomagnetic material may be disposed between thepower source 12 and thenanomagnetic material layer 15. - The layer of
nanomagnetic material 15, in one embodiment, is comprised of at least about 50 weight percent of nanomagnetic material. In another embodiment, the layer ofnanomagnetic material 15 is comprised of at least about 90 weight percent of nanomagnetic material. - The
power source 12 may, e.g., be a battery, a fuel cell, and the like. In one embodiment, thepower source 12 is a lithium-iodine or a lithium-bromine battery. By way of illustration and not limitation, one may use one or more of the lithium-halogen batteries patented by Wilson Greatbatch. Reference may be had, e.g., to U.S. Pat. No. 4,385,439 (lithium-iodine cell), U.S. Pat. Nos. 4,203,201; 4,128,703; 4,307,509 (lithium-chlorine cell); U.S. Pat. Nos. 4,210,708; 4,166,158; 4,164,070 (lithium bromine battery); U.S. Pat. No. 4,132,836 (alkali metal-halogen cell); U.S. Pat. No. 4,105,833 (lithium-bromine cell); U.S. Pat. Nos. 3,994,747; 4,324,847 (lithium anode assemblies); U.S. Pat. Nos. 4,166,887; 4,111,721; 4,071,662; 4,058,889; and the like. The entire disclosure of each of these United States patents is hereby incorporated by reference into this specification. - Referring again to FIG. 1, the power from
power source 12 is conveyed to leads 14 and 16 tolight emitting device 18. Theleads - In the embodiment depicted, each of the
leads layer 15 of nanomagnetic material that may either be contiguous with or not contiguous with theleads leads 32 and/or 34 are also similarly shielded by alayer 15 of nanomagnetic material. - In one embodiment, leads14 and/or 16, and/or
battery 12 and/or leads 32 and/or 34, and/orcontroller 24 are coated withnanomagnetic material 15 which dissipates any magnetic fields produced by very high frequency radiation. As is known to those skilled in the art, this nanomagnetic material absorbs electromagnetic radiation. Typically, such nanomagnetic material contains iron, cobalt, and/or nickel. Reference may be had, e.g., to U.S. Pat. Nos. 5,889,091; 5,714,536; 5,667,924; 5,992,241; and the like. The entire disclosure of each of these United States patents is hereby incorporated by reference into this specification. - One may utilize the nanomagnetic material described in U.S. Pat. No. 6,506,972, the entire disclosure of which is hereby incorporated by reference into this specification. Alternatively, or additionally, one may use the assemblies comprised of nanomagnetic material that is described in such patent.
- In one embodiment, one may utilize a magnetically shielded conductor assembly comprised of a first conductor disposed within an insulating matrix, and a layer comprised of nanomagentic material disposed around said first conductor, provided that such nanomagnetic material is not contiguous with said first conductor, wherein: (a) said first conductor has a resistively at 20 degrees Centigrade of from about 1 to about 100 micro ohm-centimeters, (b) said insulating matrix is comprised of nana-sized particles wherein at least about 90 weight percent of said particles have a maximum dimension of from about 10 to about 100 nanometers; (c) said insulating matrix has a resistively of from about 1×109 to about 1×1013 ohm-centimeter; (d) said nanomagnetic material has an average particle size of less than about 100 nanometers; (e) said layer of nanmagnetic material has a saturation magnetization of from about 200 to about 26,000 Gauss and a thickness of less than about 2 microns; and (f) said magnetically shielded conductor assembly is flexible, having a bend radius of less than 2 centimeters. In general, and as is known to those skilled in the art, nanomagnetic material is magnetic material which has an average particle size of less than 100 nanometers and, preferably, in the range of from about 2 to 50 nanometers. Reference may be had, e.g., to U.S. Pat. No. 5,889,091 (rotationally free nanomagnetic material); U.S. Pat. Nos. 5,714,136; 5,667,924; and the like. The entire disclosure of each of these United States patents is hereby incorporated by reference into this specification.
- The nanomagnetic materials may be, e.g., nano-sized ferrites such as, e.g., the nanomagnetic ferrites disclosed in U.S. Pat. No. 5,213,851, the entire disclosure of which is hereby incorporated by reference into this specification. This patent claims a process for coating a layer of ferritic material with a thickness of from about 0.1 to about 500 microns onto a substrate at a deposition rate of from about 0.01 to about 10 microns per minute per 35 square centimeters of substrate surface, comprising the steps of: (a) providing a solution comprised of a first compound and a second compound, wherein said first compound is an iron compound and said second compound is selected from the group consisting of compounds of nickel, zinc, magnesium, strontium, barium, manganese, lithium, lanthanum, yttrium, scandium, samarium, europium, terbium., dysprosium, holmium, erbium, ytterbium, lutetium, cerium, praseodymium, thulium, neodymium, gadolinium, aluminum, iridium, lead, chromium, gallium, indium, chromium, samarium, cobalt, titanium, and mixtures thereof, and wherein said solution is comprised of from about 0.01 to about 1,000 grams of a mixture consisting essentially of said compounds per liter of said solution; (b) subjecting said solution to ultrasonic sound waves at a frequency in excess of 20,000 hertz, and to an atmospheric pressure of at least about 600 millimeters of mercury, thereby causing said solution to form into an aerosol; (c) providing a radio frequency plasma reactor comprised of a top section, a bottom section, and a radio-frequency coil; (d) generating a hot plasma gas within said radio frequency plasma reactor, thereby producing a plasma region; (e) providing a flame region disposed above said top section of said radio frequency plasma reactor; (f) contacting said aerosol with said hot plasma gas within said plasma reactor while subjecting said aerosol to an atmospheric pressure of at least about 600 millimeters of mercury and to a radio frequency alternating current at a frequency of from about 100 kilohertz to about 30 megahertz, thereby forming a vapor; (g) providing a substrate disposed above said flame region; and (h) contacting said vapor with said substrate, thereby forming said layer of ferritic material.
- By way of further illustration, one may use the techniques described in an article by M. De Marco, X. W. Wang, et al. on “Mossbauer and magnetization studies of nickel ferrites” published in the Journal of Applied Physics 73(10), May 15, 1993, at pages 6287-6289.
- Typically, in a traditional pacemaker, the voltage required is about 5 volts, and the current required is about 10 milliamperes. In general, with such pacemaker, direct current pulses are delivered with a pulse duration about 0.5 milliseconds and a separation between adjacent pulses of about 0.7 seconds (based upon a pulse rate of about 80 heart beats per minute).
- In the
assembly 10 depicted in FIG. 1, pulsed energy can be provided to the assembly by means ofswitch 20, which is connected byline 22 tocontroller 24. Information from theassembly 10 is fed to thecontroller 24 vialine 26. Upon receipt of such information, the controller may choose to openswitch 20 and/or to closeswitch 20 at a rate or rates designed to produce the desired pulsed energy input to theheart 28. - The
heart 28 receives electricity fromdistal end 30 ofassembly 10 by means ofline 32. Theheart 28 returns information toassembly 10 by means ofline 34, which is optically connected to asensor 36 in or near such heart. Such information is conveyed throughsuch line 34, toline 26, and then tocontroller 24, wherein it is evaluated. - The
assembly 10, in one embodiment, is comprised of anoptical fiber 38 which, preferably, is a low-loss optical fiber. Theproximal end 40 of theoptical fiber 38 is comprised of aplatform 42. Disposed onsuch platform 42 isemitter 18. - The
platform 42 typically has alength 44 of less than about 200 microns, and preferably less than about 100 microns. Theheight 46 ofplatform 42 is generally less than about 100 microns, and more preferably less than about 50 microns. The aspect ratio ofplatform 42, the ratio of itslength 44 divided by itsheight 46, is generally greater than about 1.5. - The
emitter 18 is preferably a laser diode assembly that is grown on theplatform 42. Such a laser diode assembly may be grown on theplatform 42 by conventional means. Reference may be had, e.g., to U.S. Pat. Nos. 5,538,918; 5,696,023; 5,567,980; 5,425,043; 5,262,360; 5,185,289; and the like. The entire disclosure of each of these United States patents is hereby incorporated by reference into this specification. - A process for growing an edge-emitting laser diode is described in a book by Govind P. Agrawal entitled “Fiber-Optic Communication Systems,” Second Edition (John Wiley & Sons, Inc., New York, N.Y., 1997). At
page 100 of such text, in FIG. 3.15(b), an etched-mesa buried heterostructure comprised of InGasAsP material is described. - Reference also may be had to William B. Jones Jr.'s “Introduction to Optical Fiber Communication Systems” (Oxford University Press, New York, N.Y., 1998). At page 147 of such book, in FIG. 5.42, a cross-section of an N-n-P double heterostructure edge-emitting LED is presented; and reference is made to “Semiconductor Devices for Optical Communication, H. Krseel, editor, Topics in Applied Physics, volume 39, second edition, Springer-Verlag, Inc., Heidelberg.” At page 146 of such book, in FIG. 5.4.1(b) an edge-emitting LED is depicted. As is known to those skilled in the art, the same device can operate as either an LED or a laser diode, depending upon the amount of current delivered to the device. Below the threshold of the linear region, the device operates as an LED; above such threshold, the device operates as a laser diode.
- By way of further illustration, reference also may be had to Christopher C. Davis' “Lasers and Electro-Optics: Fundamentals and Engineering” (Cambridge University Press, Cambridge, England, 1996). At page 303 of this text, in FIG. 13.33(a), a gallium-aluminum-arsenic double heterojunction DFB laser structure is depicted; and a cross-sectional view of this device is presented in FIG. 13.33(b). This device is an edge-emitting laser diode.
- Referring again to FIG. 1, and in the embodiment depicted therein, the light-emitting
laser diode 18 is preferably comprised of a multiplicity of layers of material, which are shown in better detail in FIG. 3B. Referring to FIG. 3B, it will be seen that edge-emittinglaser diode 18, in the embodiment depicted, is comprised ofactive region 50, from which light is emitted. In one embodiment, thisactive region 50 is an InGaAsP material, such as the material depicted, e.g., in FIG. 3.15(b) of the Agrawal text, supra. - Referring again to FIG. 3B, the
active region 50 is preferably contiguous with thecore 52 of theoptical fiber 38. This relationship is shown in different detail in FIGS. 3A and 3D. - Referring again to FIG. 3B, it will be seen that
device 18 is comprised ofbase 54, which preferably contains overdoped negative InP material;layer 56, which preferably contains negative InP material;layer 58, which contains positive InP material,layer 60, which contains negative InP material;mesa layer 62, which contains positive InP material, andcontact 64, which contains conductive material and makes electrical contact withlead 14. As will be apparent to those skilled in the art, edge-emitting laser diodes using other semicondcutive materials also may be constructed. Thus, e.g., the edge-emitting laser diode depicted in FIG. 3C is similar to the diode shown on page 147 of the aforementioned Jones book. - Referring to FIG. 3C, and in the embodiment depicted, the edge emitting
laser diode 18 consists of four major layers. The first layer,layer 70, comprises positive GaAs:Ge material. The second layer,layer 72, comprises positive Al0.3Ga0.7As:Ge material. The third layer,layer 74, is a negative (active) layer and comprises Al0.1Ga0.9As material. The fourth layer,layer 76, is a negative layer comprising Al0.3Ga0.7As:Sn material. - Referring again to FIG. 1, the edge-emitting laser diode, in response to current delivered by
power source 12, will produce light whose intensity and duration varies with the intensity and duration of the electrical input signal(s). This light is then transmitted down the length ofoptical fiber 38, through itscore 52. - The
optical fiber 38 preferably has alength 80 of less than about 12 inches when utilized in conjunction with a pacemaker. Thefiber 38 preferably is flexible; and it is preferably biocompatible with living organisms in which it is implanted. - The light beams82 emitted from edge-emitting
laser diode 18 travel to thedistal end 30 of thefiber 38, where they contactphotodetector assembly 84. - The
photodetector assembly 84 is adapted to convert photonic energy into electrical energy. It preferably is a photovoltaic sensor. Such photovoltaic sensors are well known to those skilled in the art. Reference may be had, e.g., to U.S. Pat. Nos. 6,274,860; 5,800,631; 5,508,205; 5,474,621; and the like. The entire disclosure of each of these United States patents is hereby incorporated by reference into this specification. - By way of further illustration, U.S. Pat. No. 6,331,673 describes a solar cell module which responds to wavelengths over a wide spectrum. By comparison, in the embodiment depicted in FIG. 1, the
photodetector 84 preferably has a peak response to photonic radiation in the wavelength range of from about 400 to about 1,600 nanometers; and theoptical radiation 82 preferably is within such range and more preferably has a wavelength either from about 800 to about 900 nanometers, or from about 1250 to about 1400 nanometers, or from about 1500 to about 1600 nanometers. The use of one of these frequency ranges maximizes the efficiency of the process. By way of further illustration, U.S. Pat. No. 5,824,566 discloses a method for producing a photovoltaic device which contains a multiplicity of layers. As is the case with U.S. Pat. No. 6,331,773, the input to the photovoltaic device of this patent spans a relatively large range of wavelengths. - FIG. 2 illustrates the construction of a typical
photovoltaic detector 84. Referring to FIG. 2, and in the embodiment depicted, it will be seen thatdetector 84 is comprised of 3 major layers of material.Layer 90 is a positive AlGaAs-containing material.Layer 92 is a positive GaAs material.Layer 94 is a negative GaAs material. Light contacting thisdetector 84 provides a difference of potential betweenpoints - Referring again to FIG. 1, the electrical energy produced by
photovoltaic device 84 is transmitted vialine 32 to apacemaker 100. Information from such pacemaker is returned vialine 34 tocontroller 24 in the manner described elsewhere in this specification. - In one embodiment, the return signal from
line 34 stimulates a photodetector (not shown) to provide a reverselight pulse 102 which, when it contacts another photodetector (not shown) near theface 104 of theplatform 42, will cause a return electrical signal to be furnished to thecontroller 24 vialine 26. - FIG. 1A depicts an arrangement similar to that depicted in FIG. 1, with the exception that the
controller 24 is disposed nearer thedistal end 30 of thefiber 38 than theproximal end 40 of such fiber. As will be apparent to those skilled in the art, this arrangement utilizes shorter signals paths than the arrangement depicted in FIG. 1. - FIG. 2 is a sectional view of the assembly of FIG. 1. FIG. 4 is a perspective view of an
optical fiber assembly 110 which is similar to the configuration depicted in FIG. 1 with the exception that thelaser diode 18 is not contiguous with thecore 52 of theoptical fiber 38. In this embodiment, in order to maximize the efficiency of the device, anintermediate region 112 is used to match the index of refraction of thelaser diode 18 and thecore 52. - If there were not an
intermediate section 112 betweenlaser diode 18 andfiber core 52, the resulting air gap would not effectively couple the light emitter to the fiber core. In order to effectuate such coupling, one needs either contiguity (see FIG. 1), or an intermediate portion with an index of refraction substantially between the index of refraction of the active region of thelaser diode 18, and the index of refraction of thefiber core 52. In one embodiment, theintermediate portion 112 will have an index of refraction of from about 1.4 to about 3.7. This “source-fiber coupling” is described on pages 123 et seq. of the aforementioned Agrawal text. On page 123, an index-matching liquid is mentioned. In one embodiment, an index-matching epoxy material is used. - Reference also may be had to page 557 of the aforementioned Davis text, which discloses the use of an index matching fluid between two devices to minimize the Fresnel loss.
- Referring again to FIG. 4, the
photodetector assembly 84 depends upon absorption of light in wavelength bands. Different materials respond best in different ranges of wavelengths. At page 140 of the Agrawal text, the wavelength dependence of the absorption coefficient for several semiconductor materials are shown. Thus, as will be apparent, as the material(s) within thedetector 84 changes, the wavelength of the light emitted byemitter 18 also preferably changes to maximize the conversion efficiency. In order to effectuate such a change of emitted wavelengths, one may change the material used to constructemitter 18. - In one embodiment, depicted in FIG. 4, an
index matching material 112 is disposed between the end of theoptical fiber 38 and aseparate photodetector 84. Without such anintermediate material 112, the air gap that would be present would decrease conversion efficiency. Reference may be had, e.g., to the “Laser Focus World Buyer's Guide 2001,”Volume 36,issue 12, published by Laser Focus World of Tulsa, Okla. This guide presents a series of tables for semiconductor lasers which describes, for any particular desired wavelength, the output power, the threshold current, the laser mode, the rise time, the spectral width, the beam diverge, other special features, and the manufacturer. Thus, for any desired wavelength, one can choose the appropriate manufacturer(s) and the appropriate material(s). - It is to be understood that the aforementioned description is illustrative only and that changes can be made in the apparatus, in the ingredients and their proportions, and in the sequence of combinations and process steps, as well as in other aspects of the invention discussed herein, without departing from the scope of the invention as defined in the following claims.
Claims (20)
1. An optical energy assembly comprising an electrical power supply, a first photovoltaic sensor, a second photovoltaic sensor, a load, a lead contiguous with said load, a controller, and a shielding composition wherein
a. said electrical power supply is operatively configured to generate a first electrical energy,
b. said first photovoltaic sensor is operatively configured to convert said first electrical energy to optical energy,
c. said second photovoltaic sensor is operatively configured to convert said optical energy to a second electrical energy,
d. said shielding composition is comprised of at least about 50 weight percent of nanomagnetic material, wherein
i. said nanomagnetic material has a particle size of less than about 100 nanometers, and
ii. said shielding composition is coated on a shielded member, wherein said shielded member is selected from the group consisting of said electrical power supply, said first photovoltaic sensor, said second photovoltaic sensor, said load, said lead, said controller, and mixtures thereof.
2. An optical energy assembly as recited in claim 3 , wherein said lead is contiguous with said second photovoltaic sensor.
3. An optical energy assembly as recited in claim 4 , wherein said load is a pacemaker.
4. An optical energy assembly comprising an electrical power supply, a first photodetector, a second photodetector, an optical fiber, and a load, wherein
a. said electrical power supply is operatively configured to generate a first electrical energy,
b. said first photodetector is operatively configured to convert said first electrical energy to optical energy,
c. said second photodetector is operatively configured to convert said optical energy to a second electrical energy, and
d. said first photodetector and said second photodetector are in optical communication through said optical fiber.
5. An optical energy assembly as recited in claim 4 , further comprising a controller.
6. An optical energy assembly as recited in claim 5 , wherein said first photodetector is a photovoltaic sensor.
7. An optical energy assembly as recited in claim 6 , wherein said second photodetector is a photovoltaic sensor.
8. An optical energy assembly as recited in claim 7 , wherein said optical fiber is biocompatible.
9. An optical energy assembly as recited in claim 8 , wherein said optical fiber is flexible.
10. An optical energy assembly as recited in claim 9 , wherein said optical fiber has a length less than about twelve inches.
11. An optical energy assembly as recited in claim 10 , wherein said load is a pacemaker.
12. An optical energy assembly comprising an electrical power supply, a first photodetector, a second photodetector, and a controller wherein
a. said electrical power supply is operatively configured to generate a first electrical energy,
b. said first photodetector is operatively configured to convert said first electrical energy to optical energy, and
c. said second photodetector is operatively configured to convert said optical energy to a second electrical energy.
13. An optical energy assembly as recited in claim 12 , further comprising a shielding composition wherein said composition is comprised of nanomagnetic material which has a particle size of less than about 100 nanometers and is coated on a shielded member selected from the group comprised of said electrical power supply, said first photodetector, said second photodetector, said controller, and mixtures thereof.
14. An optical energy assembly as recited in claim 12 , further comprising a load.
15. An optical energy assembly as recited in claim 14 , further comprising a lead contiguous with said load.
16. An optical energy assembly as recited in claim 15 , further comprising a switch.
17. An optical energy assembly as recited in claim 16 , wherein said controller operates said switch.
18. An optical energy assembly as recited in claim 17 , further comprising a pacemaker.
19. An optical energy assembly as recited in claim 18 , further comprising an optical fiber.
20. An optical energy assembly as recited in claim 19 , further comprising an index matching material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/870,737 US20040226603A1 (en) | 2002-01-09 | 2004-06-17 | Optical fiber assembly |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US34696902P | 2002-01-09 | 2002-01-09 | |
US10/054,407 US6506972B1 (en) | 2002-01-22 | 2002-01-22 | Magnetically shielded conductor |
US10/336,088 US6768053B1 (en) | 2002-01-09 | 2003-01-03 | Optical fiber assembly |
US10/870,737 US20040226603A1 (en) | 2002-01-09 | 2004-06-17 | Optical fiber assembly |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/336,088 Continuation US6768053B1 (en) | 2002-01-09 | 2003-01-03 | Optical fiber assembly |
Publications (1)
Publication Number | Publication Date |
---|---|
US20040226603A1 true US20040226603A1 (en) | 2004-11-18 |
Family
ID=32716568
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/336,088 Expired - Fee Related US6768053B1 (en) | 2002-01-09 | 2003-01-03 | Optical fiber assembly |
US10/870,737 Abandoned US20040226603A1 (en) | 2002-01-09 | 2004-06-17 | Optical fiber assembly |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/336,088 Expired - Fee Related US6768053B1 (en) | 2002-01-09 | 2003-01-03 | Optical fiber assembly |
Country Status (1)
Country | Link |
---|---|
US (2) | US6768053B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112307986A (en) * | 2020-11-03 | 2021-02-02 | 华北电力大学 | Load switch event detection method and system by utilizing Gaussian gradient |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6768053B1 (en) * | 2002-01-09 | 2004-07-27 | Nanoset, Llc | Optical fiber assembly |
US6506972B1 (en) * | 2002-01-22 | 2003-01-14 | Nanoset, Llc | Magnetically shielded conductor |
US20050247472A1 (en) * | 2002-01-22 | 2005-11-10 | Helfer Jeffrey L | Magnetically shielded conductor |
US20050070972A1 (en) * | 2003-09-26 | 2005-03-31 | Wahlstrand Carl D. | Energy shunt for producing an MRI-safe implantable medical device |
US7765005B2 (en) * | 2004-02-12 | 2010-07-27 | Greatbatch Ltd. | Apparatus and process for reducing the susceptability of active implantable medical devices to medical procedures such as magnetic resonance imaging |
US7174219B2 (en) * | 2004-03-30 | 2007-02-06 | Medtronic, Inc. | Lead electrode for use in an MRI-safe implantable medical device |
US7844344B2 (en) | 2004-03-30 | 2010-11-30 | Medtronic, Inc. | MRI-safe implantable lead |
US7877150B2 (en) | 2004-03-30 | 2011-01-25 | Medtronic, Inc. | Lead electrode for use in an MRI-safe implantable medical device |
US7844343B2 (en) | 2004-03-30 | 2010-11-30 | Medtronic, Inc. | MRI-safe implantable medical device |
US8989840B2 (en) * | 2004-03-30 | 2015-03-24 | Medtronic, Inc. | Lead electrode for use in an MRI-safe implantable medical device |
US9155877B2 (en) | 2004-03-30 | 2015-10-13 | Medtronic, Inc. | Lead electrode for use in an MRI-safe implantable medical device |
US8280526B2 (en) | 2005-02-01 | 2012-10-02 | Medtronic, Inc. | Extensible implantable medical lead |
US8027736B2 (en) | 2005-04-29 | 2011-09-27 | Medtronic, Inc. | Lead electrode for use in an MRI-safe implantable medical device |
US7853332B2 (en) * | 2005-04-29 | 2010-12-14 | Medtronic, Inc. | Lead electrode for use in an MRI-safe implantable medical device |
US9044593B2 (en) * | 2007-02-14 | 2015-06-02 | Medtronic, Inc. | Discontinuous conductive filler polymer-matrix composites for electromagnetic shielding |
US10537730B2 (en) | 2007-02-14 | 2020-01-21 | Medtronic, Inc. | Continuous conductive materials for electromagnetic shielding |
US8483842B2 (en) | 2007-04-25 | 2013-07-09 | Medtronic, Inc. | Lead or lead extension having a conductive body and conductive body contact |
US9037263B2 (en) | 2008-03-12 | 2015-05-19 | Medtronic, Inc. | System and method for implantable medical device lead shielding |
US10086194B2 (en) | 2009-04-30 | 2018-10-02 | Medtronic, Inc. | Termination of a shield within an implantable medical lead |
EP2838609B1 (en) | 2012-04-19 | 2019-03-06 | Medtronic, Inc. | Paired medical lead bodies with braided conductive shields having different physical parameter values |
US9993638B2 (en) | 2013-12-14 | 2018-06-12 | Medtronic, Inc. | Devices, systems and methods to reduce coupling of a shield and a conductor within an implantable medical lead |
US10279171B2 (en) | 2014-07-23 | 2019-05-07 | Medtronic, Inc. | Methods of shielding implantable medical leads and implantable medical lead extensions |
WO2016014816A1 (en) | 2014-07-24 | 2016-01-28 | Medtronic, Inc. | Methods of shielding implantable medical leads and implantable medical lead extensions |
Citations (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3994747A (en) * | 1975-09-29 | 1976-11-30 | Eleanor & Wilson Greatbatch Foundation | Lithium-bromine cell |
US4058889A (en) * | 1975-09-29 | 1977-11-22 | Eleanor & Wilson Greatbatch Foundation | Method of making a lithium-bromine cell |
US4071662A (en) * | 1974-11-19 | 1978-01-31 | Wilson Greatbatch Ltd. | Lithium-iodine battery having coated anode |
US4105833A (en) * | 1976-09-16 | 1978-08-08 | Eleanor & Wilson Greatbatch Foundation | Lithium-bromine cell |
US4111721A (en) * | 1976-06-14 | 1978-09-05 | American Can Company | Strip cast aluminum heat treatment |
US4128703A (en) * | 1977-07-05 | 1978-12-05 | Wilson Greatbatch Ltd. | Lithium-iodine cell |
US4132836A (en) * | 1977-11-21 | 1979-01-02 | Eleanor & Wilson Greatbatch Foundation | Alkali metal-halogen cell having mixed halogen cathode |
US4166158A (en) * | 1977-12-30 | 1979-08-28 | Wilson Greatbatch Ltd. | Lithium-iodine cell |
US4166887A (en) * | 1978-06-19 | 1979-09-04 | Wilson Greatbatch Ltd. | Lithium halogen cell including activated charcoal |
US4203201A (en) * | 1977-07-05 | 1980-05-20 | Wilson Greatbatch Ltd. | Methods for making lithium-iodine cell |
US4210708A (en) * | 1978-03-30 | 1980-07-01 | Wilson Greatbatch Ltd. | Lithium-iodine cell |
US4307509A (en) * | 1977-04-07 | 1981-12-29 | Eleanor & Wilson Greatbatch Foundation | Method for manufacturing a lithium-chlorine cell |
US4324847A (en) * | 1980-09-18 | 1982-04-13 | Medtronic, Inc. | Lithium anode assemblies and cell construction |
US4385439A (en) * | 1977-12-30 | 1983-05-31 | Wilson Greatbatch, Ltd. | Method of making a lithium-iodine cell |
US4893897A (en) * | 1988-03-02 | 1990-01-16 | Dow Chemical Company | Plastic optical fiber for in vivo use having a biocompatible polyurethane cladding |
US4963729A (en) * | 1989-03-03 | 1990-10-16 | Simmonds Precision Products, Inc. | Optically powered sensor system with improved signal conditioning |
US5185289A (en) * | 1988-06-28 | 1993-02-09 | International Business Machines Corporation | Process for the selective growth of GaAs |
US5213851A (en) * | 1990-04-17 | 1993-05-25 | Alfred University | Process for preparing ferrite films by radio-frequency generated aerosol plasma deposition in atmosphere |
US5259051A (en) * | 1992-08-28 | 1993-11-02 | At&T Bell Laboratories | Optical fiber interconnection apparatus and methods of making interconnections |
US5262360A (en) * | 1990-12-31 | 1993-11-16 | The Board Of Trustees Of The University Of Illinois | AlGaAs native oxide |
US5425043A (en) * | 1992-08-10 | 1995-06-13 | The Board Of Trustees Of The University Of Illinois | Semiconductor laser |
US5474621A (en) * | 1994-09-19 | 1995-12-12 | Energy Conversion Devices, Inc. | Current collection system for photovoltaic cells |
US5508205A (en) * | 1994-03-29 | 1996-04-16 | Amoco/Enron Solar | Method of making and utilizing partially cured photovoltaic assemblies |
US5538918A (en) * | 1991-05-15 | 1996-07-23 | Minnesota Mining And Manufacturing Company | Method of fabricating a buried-ridge II-VI laser diode |
US5549642A (en) * | 1994-08-19 | 1996-08-27 | Medtronic, Inc. | Atrial defibrillator and method of use |
US5667924A (en) * | 1996-02-14 | 1997-09-16 | Xerox Corporation | Superparamagnetic image character recognition compositions and processes of making and using |
US5713924A (en) * | 1995-06-27 | 1998-02-03 | Medtronic, Inc. | Defibrillation threshold reduction system |
US5714136A (en) * | 1991-10-22 | 1998-02-03 | Kao Corporation | Hair cosmetic containing a cationic surfactant, fat and oil and an alkyl saccharide surfactant |
US5714536A (en) * | 1996-01-11 | 1998-02-03 | Xerox Corporation | Magnetic nanocompass compositions and processes for making and using |
US5800631A (en) * | 1995-08-24 | 1998-09-01 | Canon Kabushiki Kaisha | Solar cell module having a specific back side covering material and a process for the production of said solar cell module |
US5824566A (en) * | 1995-09-26 | 1998-10-20 | Canon Kabushiki Kaisha | Method of producing a photovoltaic device |
US5992241A (en) * | 1995-05-09 | 1999-11-30 | Magyar Allamvasutak Reszvenytarsasag | Method and device for determining the neutral temperature of welded tracks |
US6274860B1 (en) * | 1999-05-28 | 2001-08-14 | Terrasun, Llc | Device for concentrating optical radiation |
US6331673B1 (en) * | 1995-10-17 | 2001-12-18 | Canon Kabushiki Kaisha | Solar cell module having a surface side covering material with a specific nonwoven glass fiber member |
US6331773B1 (en) * | 1999-04-16 | 2001-12-18 | Storage Technology Corporation | Pinned synthetic anti-ferromagnet with oxidation protection layer |
US6506972B1 (en) * | 2002-01-22 | 2003-01-14 | Nanoset, Llc | Magnetically shielded conductor |
US6768053B1 (en) * | 2002-01-09 | 2004-07-27 | Nanoset, Llc | Optical fiber assembly |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6281489B1 (en) * | 1997-05-02 | 2001-08-28 | Baker Hughes Incorporated | Monitoring of downhole parameters and tools utilizing fiber optics |
JP4189610B2 (en) * | 1998-05-08 | 2008-12-03 | ソニー株式会社 | Photoelectric conversion element and manufacturing method thereof |
US20030080281A1 (en) * | 2001-10-30 | 2003-05-01 | Tai-Her Yang | Light activated optically controlled display unit |
-
2003
- 2003-01-03 US US10/336,088 patent/US6768053B1/en not_active Expired - Fee Related
-
2004
- 2004-06-17 US US10/870,737 patent/US20040226603A1/en not_active Abandoned
Patent Citations (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4071662A (en) * | 1974-11-19 | 1978-01-31 | Wilson Greatbatch Ltd. | Lithium-iodine battery having coated anode |
US4058889A (en) * | 1975-09-29 | 1977-11-22 | Eleanor & Wilson Greatbatch Foundation | Method of making a lithium-bromine cell |
US3994747A (en) * | 1975-09-29 | 1976-11-30 | Eleanor & Wilson Greatbatch Foundation | Lithium-bromine cell |
US4111721A (en) * | 1976-06-14 | 1978-09-05 | American Can Company | Strip cast aluminum heat treatment |
US4105833A (en) * | 1976-09-16 | 1978-08-08 | Eleanor & Wilson Greatbatch Foundation | Lithium-bromine cell |
US4307509A (en) * | 1977-04-07 | 1981-12-29 | Eleanor & Wilson Greatbatch Foundation | Method for manufacturing a lithium-chlorine cell |
US4128703A (en) * | 1977-07-05 | 1978-12-05 | Wilson Greatbatch Ltd. | Lithium-iodine cell |
US4203201A (en) * | 1977-07-05 | 1980-05-20 | Wilson Greatbatch Ltd. | Methods for making lithium-iodine cell |
US4132836A (en) * | 1977-11-21 | 1979-01-02 | Eleanor & Wilson Greatbatch Foundation | Alkali metal-halogen cell having mixed halogen cathode |
US4166158A (en) * | 1977-12-30 | 1979-08-28 | Wilson Greatbatch Ltd. | Lithium-iodine cell |
US4385439A (en) * | 1977-12-30 | 1983-05-31 | Wilson Greatbatch, Ltd. | Method of making a lithium-iodine cell |
US4210708A (en) * | 1978-03-30 | 1980-07-01 | Wilson Greatbatch Ltd. | Lithium-iodine cell |
US4166887A (en) * | 1978-06-19 | 1979-09-04 | Wilson Greatbatch Ltd. | Lithium halogen cell including activated charcoal |
US4324847A (en) * | 1980-09-18 | 1982-04-13 | Medtronic, Inc. | Lithium anode assemblies and cell construction |
US4893897A (en) * | 1988-03-02 | 1990-01-16 | Dow Chemical Company | Plastic optical fiber for in vivo use having a biocompatible polyurethane cladding |
US5185289A (en) * | 1988-06-28 | 1993-02-09 | International Business Machines Corporation | Process for the selective growth of GaAs |
US4963729A (en) * | 1989-03-03 | 1990-10-16 | Simmonds Precision Products, Inc. | Optically powered sensor system with improved signal conditioning |
US5213851A (en) * | 1990-04-17 | 1993-05-25 | Alfred University | Process for preparing ferrite films by radio-frequency generated aerosol plasma deposition in atmosphere |
US5262360A (en) * | 1990-12-31 | 1993-11-16 | The Board Of Trustees Of The University Of Illinois | AlGaAs native oxide |
US5696023A (en) * | 1990-12-31 | 1997-12-09 | The Board Of Trustees Of The University Of Illinois | Method for making aluminum gallium arsenide semiconductor device with native oxide layer |
US5567980A (en) * | 1990-12-31 | 1996-10-22 | The Board Of Trustees Of The University Of Illinois | Native oxide of an aluminum-bearing group III-V semiconductor |
US5538918A (en) * | 1991-05-15 | 1996-07-23 | Minnesota Mining And Manufacturing Company | Method of fabricating a buried-ridge II-VI laser diode |
US5714136A (en) * | 1991-10-22 | 1998-02-03 | Kao Corporation | Hair cosmetic containing a cationic surfactant, fat and oil and an alkyl saccharide surfactant |
US5425043A (en) * | 1992-08-10 | 1995-06-13 | The Board Of Trustees Of The University Of Illinois | Semiconductor laser |
US5259051A (en) * | 1992-08-28 | 1993-11-02 | At&T Bell Laboratories | Optical fiber interconnection apparatus and methods of making interconnections |
US5508205A (en) * | 1994-03-29 | 1996-04-16 | Amoco/Enron Solar | Method of making and utilizing partially cured photovoltaic assemblies |
US5549642A (en) * | 1994-08-19 | 1996-08-27 | Medtronic, Inc. | Atrial defibrillator and method of use |
US5474621A (en) * | 1994-09-19 | 1995-12-12 | Energy Conversion Devices, Inc. | Current collection system for photovoltaic cells |
US5992241A (en) * | 1995-05-09 | 1999-11-30 | Magyar Allamvasutak Reszvenytarsasag | Method and device for determining the neutral temperature of welded tracks |
US5713924A (en) * | 1995-06-27 | 1998-02-03 | Medtronic, Inc. | Defibrillation threshold reduction system |
US5800631A (en) * | 1995-08-24 | 1998-09-01 | Canon Kabushiki Kaisha | Solar cell module having a specific back side covering material and a process for the production of said solar cell module |
US5824566A (en) * | 1995-09-26 | 1998-10-20 | Canon Kabushiki Kaisha | Method of producing a photovoltaic device |
US6331673B1 (en) * | 1995-10-17 | 2001-12-18 | Canon Kabushiki Kaisha | Solar cell module having a surface side covering material with a specific nonwoven glass fiber member |
US5714536A (en) * | 1996-01-11 | 1998-02-03 | Xerox Corporation | Magnetic nanocompass compositions and processes for making and using |
US5889091A (en) * | 1996-01-11 | 1999-03-30 | Xerox Corporation | Magnetic nanocompass compositions and processes for making and using |
US5667924A (en) * | 1996-02-14 | 1997-09-16 | Xerox Corporation | Superparamagnetic image character recognition compositions and processes of making and using |
US6331773B1 (en) * | 1999-04-16 | 2001-12-18 | Storage Technology Corporation | Pinned synthetic anti-ferromagnet with oxidation protection layer |
US6274860B1 (en) * | 1999-05-28 | 2001-08-14 | Terrasun, Llc | Device for concentrating optical radiation |
US6768053B1 (en) * | 2002-01-09 | 2004-07-27 | Nanoset, Llc | Optical fiber assembly |
US6506972B1 (en) * | 2002-01-22 | 2003-01-14 | Nanoset, Llc | Magnetically shielded conductor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112307986A (en) * | 2020-11-03 | 2021-02-02 | 华北电力大学 | Load switch event detection method and system by utilizing Gaussian gradient |
Also Published As
Publication number | Publication date |
---|---|
US6768053B1 (en) | 2004-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6768053B1 (en) | Optical fiber assembly | |
US6711440B2 (en) | MRI-compatible medical device with passive generation of optical sensing signals | |
US20020116029A1 (en) | MRI-compatible pacemaker with power carrying photonic catheter and isolated pulse generating electronics providing VOO functionality | |
US6876886B1 (en) | Magnetically shielded conductor | |
Hasenberg et al. | Recent advances in Sb-based midwave-infrared lasers | |
JPS6198130A (en) | Method of transmitting power and constitution thereof | |
US20020116034A1 (en) | Controllable, wearable MRI-compatible pacemaker with power carrying photonic catheter and VOO functionality | |
US20020038138A1 (en) | Transcutaneous energy transfer device with magnetic field protected components in secondary coil | |
CN110036449B (en) | Power supply | |
US20080245407A1 (en) | Power source | |
Pratesi | Diode lasers in photomedicine | |
CN108233180A (en) | A kind of 808nm semiconductor laser structures of AlGaInP structures | |
TW442828B (en) | Light emitting device | |
US8412053B2 (en) | Radioisotope powered light modulating communication devices | |
RU2671418C1 (en) | Device for wireless transcutaneous transmission of optical energy for power supply of implantable medical devices | |
CN206180375U (en) | Reduce laser instrument system of self -mixing interference effect | |
Mitamura et al. | Development of transcutaneous energy transmission system | |
Barnes et al. | Proton irradiation effects in oxide-confined vertical cavity surface emitting laser (VCSEL) diodes | |
Mitamura et al. | Transcutaneous energy transmission for assisted circulation | |
Gorker | MiniMARS power conversion. Viewgraphs | |
CN212679858U (en) | Red light therapeutic device | |
CN101640243B (en) | InAs/InP quantum dot entangled light source and remote optical fiber communication system | |
Choquette et al. | Improved efficiency of small area selectively oxidized VCSELs | |
Lyu et al. | Wireless subcutaneous power supplies for recharging implanted electronic devices | |
Song et al. | Fiber optic guided functional electrical stimulation with microscale photovoltaic neurostimulator devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: NANOSET, LLC, NEW YORK Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:WANG, XINGWU;BIGANG, MIN;REEL/FRAME:015492/0888;SIGNING DATES FROM 20040605 TO 20040615 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |
|
AS | Assignment |
Owner name: BIOPHAN TECHNOLOGIES, INC., NEW YORK Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:NANOSET, LLC;REEL/FRAME:020634/0608 Effective date: 20080215 |