US20020022298A1 - Process for producing photosensor with color filter - Google Patents
Process for producing photosensor with color filter Download PDFInfo
- Publication number
- US20020022298A1 US20020022298A1 US09/344,762 US34476299A US2002022298A1 US 20020022298 A1 US20020022298 A1 US 20020022298A1 US 34476299 A US34476299 A US 34476299A US 2002022298 A1 US2002022298 A1 US 2002022298A1
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 239000012212 insulator Substances 0.000 claims abstract description 18
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims 3
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a semiconductor device fabrication, and more particularly to a method for forming a photo-sensitive device with color filter.
- FIGS. 1 are schematic representations of structures at last stages during the formulation of photo-sensitive device using the conventional, prior technology.
- a planarized inter-metal dielectric layer 100 with a photo-receiving region 130 is formed.
- a metal layer 114 is deposited and defined to expose the photo-receiving region 130 on the inter-metal dielectric layer 100 .
- a passivation layer 150 is formed on to protect the sensitive device below.
- FIG. 1B because a planar layer is needed for following color filter process, a coated planar film 152 or coated spin-on glass with etching-back process is performed. Both planar film 152 and passivation layer 150 are transparent. Then, a color filter process, comprising coating R G B filters, development, etching and top coating, is performed to form color filter 112 . Next, another passivation layer 120 is coated on to cover the color filter 112 and planar film 152 .
- FIG. 2 is a flow diagram showing the steps of forming color filter according to the above conventional process with six main steps.
- a method for forming photo-sensitive device that substantially reduces the cost comparing to the prior method. This is performed by reducing process steps and raw material due to the process steps are reversible.
- the present invention reduces the cycle time by reducing the planar film and passivation layer for color filter.
- this invention increases the transimittance rate by reducing the planar film and yield.
- a planarized insulator with a photo-receiving region formed in is provided. Then, at least one color filter pattern is formed on the photo-receiving region by using conventional method. Next, a conformal conductive layer is formed on said insulator. A passivation layer over said partially fabricated device is formed.
- FIGS. 1A to 1 B are schematic representations of structures at last stages during the formulation of the photo-sensitive device using conventional, prior technology
- FIG. 2 is a flow diagram showing the steps for forming a photo-sensitive device in accordance with a conventional, prior method
- FIG. 3 is a flow diagram showing the steps for forming a photo-sensitive device in accordance with a method disclosed herein;
- FIGS. 4A to 4 E are schematic representations of structures at last stages during the formulation of the photo-sensitive device in accordance with a method disclosed.
- FIG. 3 is a flow diagram summarizing the steps in one method of forming a photo-sensitive device in accordance with this disclosure.
- a planarized inter-metal dielectric layer is formed on a substrate to expose a photo-receiving region.
- at least one color filer layer is formed on the photo-receiving region of the inter-metal dielectric layer.
- a conformal conductive layer which is the top metal layer of the photo-sensitive device is formed on the inter-metal dielectric layer.
- a passivation layer is formed on the device to protect both color filter and metal layer. Suitable conditions for performing the various steps set forth in FIG. 3 are set forth below and will be explained by reference to FIGS. 4 A-E.
- a substrate useful in forming a layered semiconductor device wherein a planarized insulator layer 10 has a photo-receiving region 30 formed therein.
- This insulator layer 10 is the last inter-metal dielectric layer in photo-sensitive device and can be planarized by using chemical mechanical polishing to reach the global planarization.
- the photo-receiving region 30 is a light receiving region and will have a converter (not shown in FIGS.) to transfer light into current.
- the material of this inter-metal dielectric layer 10 is transparent and can be made from any typical and well-known dielectric material used in sensor device, but is preferably silicon oxide.
- a color filter layer 12 is formed on the planarized insulator layer 10 by using any conventional method.
- one color filter 12 is formed on the photo-receiving region 30 ..
- a conductive layer 14 is deposited on the partially fabricated device.
- the material of this layer 14 can be Al and formed using any known technique such as reactive sputtering process (with or without collimation) wherein sputtering is carried out in Ar+N 2 atmosphere using an Al target.
- the thickness of this conductive layer 14 can be in the range of about 8000 angstroms to about 10000 angstroms.
- a photoresist layer 18 is then formed and patterned on the conductive layer 14 using conventional photolithographic technology, defining a metal area to expose the photo-receiving region 30 over a portion of the insulator layer 10 .
- an anisotropically etching process is performed, using the photoresist layer 18 as a mask.
- any suitable dry etching method is performed to etch this conductive layer 14 .
- Any other solution with high selectivity is capable to etch conductive layer 14 .
- This etching process exposes color filter 12 and a portion of the insulator layer 14 comprising photo-receiving region 30 .
- the photoresist layer 18 is removed by using any well-known technology, as shown in FIG. 4D.
- a passivation layer 20 is conformally formed on the device to protect this device by using any conventional method, as shown in FIG. 4E. Because this layer 20 is the top layer of sensor device, the passivation layer 20 dose not need to be planarized.
- the raw material of this passivation layer 20 is polymer or polyimide.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Filters (AREA)
Abstract
A method for forming photo-sensitive device is disclosed. The method includes providing a substrate with a transparent, planarized insulator. Then, one color filter layer is formed on a photo-receiving region of the substrate. A conductive layer is deposited on the substrate and defined to expose the photo-receiving region. Then, a passivation layer is coated on the partially fabricated device to protect the color filter.
Description
- 1. Field of the Invention
- The present invention relates to a semiconductor device fabrication, and more particularly to a method for forming a photo-sensitive device with color filter.
- 2. Description of the Prior Art
- FIGS. 1 are schematic representations of structures at last stages during the formulation of photo-sensitive device using the conventional, prior technology. Referring to FIG. 1A, a planarized inter-metal
dielectric layer 100 with a photo-receivingregion 130 is formed. Ametal layer 114 is deposited and defined to expose the photo-receivingregion 130 on the inter-metaldielectric layer 100. Then, apassivation layer 150 is formed on to protect the sensitive device below. - Referring to FIG. 1B, because a planar layer is needed for following color filter process, a coated
planar film 152 or coated spin-on glass with etching-back process is performed. Bothplanar film 152 andpassivation layer 150 are transparent. Then, a color filter process, comprising coating R G B filters, development, etching and top coating, is performed to formcolor filter 112. Next, anotherpassivation layer 120 is coated on to cover thecolor filter 112 andplanar film 152. FIG. 2 is a flow diagram showing the steps of forming color filter according to the above conventional process with six main steps. - The above description, however, has a high cost and long cycle time because of many steps in the process. Furthermore, multi-transparent layers will give a low transimittance rate and yield.
- In accordance with the present invention, a method is provided for forming photo-sensitive device that substantially reduces the cost comparing to the prior method. This is performed by reducing process steps and raw material due to the process steps are reversible.
- It is another object that the present invention reduces the cycle time by reducing the planar film and passivation layer for color filter.
- It is still another object that this invention increases the transimittance rate by reducing the planar film and yield.
- In one embodiment, a planarized insulator with a photo-receiving region formed in is provided. Then, at least one color filter pattern is formed on the photo-receiving region by using conventional method. Next, a conformal conductive layer is formed on said insulator. A passivation layer over said partially fabricated device is formed.
- The foregoing aspects and many of the attendant advantages of this invention will become more readily appreciated as the same becomes better understood by reference to the following detailed description, when taken in conjunction with the accompanying drawings, wherein:
- FIGS. 1A to 1B are schematic representations of structures at last stages during the formulation of the photo-sensitive device using conventional, prior technology;
- FIG. 2 is a flow diagram showing the steps for forming a photo-sensitive device in accordance with a conventional, prior method;
- FIG. 3 is a flow diagram showing the steps for forming a photo-sensitive device in accordance with a method disclosed herein;
- FIGS. 4A to 4E are schematic representations of structures at last stages during the formulation of the photo-sensitive device in accordance with a method disclosed.
- FIG. 3 is a flow diagram summarizing the steps in one method of forming a photo-sensitive device in accordance with this disclosure. First, a planarized inter-metal dielectric layer is formed on a substrate to expose a photo-receiving region. Next, at least one color filer layer is formed on the photo-receiving region of the inter-metal dielectric layer. A conformal conductive layer which is the top metal layer of the photo-sensitive device is formed on the inter-metal dielectric layer. Then, a passivation layer is formed on the device to protect both color filter and metal layer. Suitable conditions for performing the various steps set forth in FIG. 3 are set forth below and will be explained by reference to FIGS. 4A-E.
- Referring to FIG. 4A, a substrate useful in forming a layered semiconductor device is shown wherein a planarized
insulator layer 10 has a photo-receivingregion 30 formed therein. Thisinsulator layer 10 is the last inter-metal dielectric layer in photo-sensitive device and can be planarized by using chemical mechanical polishing to reach the global planarization. The photo-receivingregion 30 is a light receiving region and will have a converter (not shown in FIGS.) to transfer light into current. Hence, the material of this inter-metaldielectric layer 10 is transparent and can be made from any typical and well-known dielectric material used in sensor device, but is preferably silicon oxide. - A
color filter layer 12 is formed on theplanarized insulator layer 10 by using any conventional method. In this embodiment, onecolor filter 12 is formed on the photo-receivingregion 30.. - Referring to FIG. 4B, a
conductive layer 14 is deposited on the partially fabricated device. The material of thislayer 14 can be Al and formed using any known technique such as reactive sputtering process (with or without collimation) wherein sputtering is carried out in Ar+N2 atmosphere using an Al target. The thickness of thisconductive layer 14 can be in the range of about 8000 angstroms to about 10000 angstroms. - Referring to FIG. 4C, a
photoresist layer 18 is then formed and patterned on theconductive layer 14 using conventional photolithographic technology, defining a metal area to expose the photo-receivingregion 30 over a portion of theinsulator layer 10. - Thereafter, an anisotropically etching process is performed, using the
photoresist layer 18 as a mask. In this embodiment, any suitable dry etching method is performed to etch thisconductive layer 14. Any other solution with high selectivity is capable to etchconductive layer 14. This etching process exposescolor filter 12 and a portion of theinsulator layer 14 comprising photo-receiving region 30. Then, thephotoresist layer 18 is removed by using any well-known technology, as shown in FIG. 4D. - Then, a
passivation layer 20 is conformally formed on the device to protect this device by using any conventional method, as shown in FIG. 4E. Because thislayer 20 is the top layer of sensor device, thepassivation layer 20 dose not need to be planarized. The raw material of thispassivation layer 20 is polymer or polyimide. - From the process of this invention, two passivation layers and one planarization step(one passivation layer on the metal layer and one planarized layer) are reduced, so the cost of raw material reduces about 14US$/wafer while machine is about 5US$/wafer. Moreover, the reduced materials will increase transparent rate about 9%
- Although specific embodiments have been illustrated and described, it will be obvious to those skilled in the art that various modifications may be made without departing from what is intended to be limited solely by the appended claims.
Claims (13)
1. A method for forming photo-sensitive device, said method comprising:
providing a substrate;
forming one color filter layer on a portion of said substrate;
forming a conductive layer on said substrate; and
forming an insulator layer on said partially fabricated device.
2. The method according to claim 1 , wherein said substrate comprises a planarized insulator layer on surface and a photo-receiving region.
3. The method according to claim 2 , wherein said insulator is transparent.
4. The method according to claim 1 , wherein said portion of said substrate a color filter formed on is at least less or equal than a photo-receiving region.
5. The method according to claim 1 , wherein said step of forming a conductive layer on said substrate comprises:
depositing a conformal conductive layer over said partially fabricated device;
forming a photoresist layer over said conductive layer and transferring a pattern at least larger than a photo-receiving region into said photoresist layer;
removing said conductive layer using said photoresist layer as a mask; and
removing said photoresist layer.
6. The method according to claim 1 , wherein said insulator layer is a passivation layer.
7. The method according to claim 1 , wherein said conductive layer is a metal layer.
8. A method for forming photo-sensitive device, said method comprising:
providing a planarized insulator with a photo-receiving region formed in;
forming one color filter pattern on said photo-receiving region;
forming a conductive layer on said insulator;
forming a passivation layer over said partially fabricated device.
9. The method according to claim 8 , wherein said conductive layer is a metal layer.
10. The method according to claim 8 , wherein said step of forming a conductive layer on said insulator comprises:
forming a conformal conductive layer over said partially fabricated device;
forming a photoresist layer on said conductive layer and transferring a pattern at least larger than said photo-sensitive region into said photoresist layer;
removing a portion of said conductive layer being left uncovered by said photoresist layer;
removing said photoresist layer;
11. The method according to claim 8 , wherein said insulator is transparent.
12. A method for forming photosensor device, said method comprising:
providing a substrate with a photo-receiving region formed in;
providing a transparent, planarized insulator layer on said substrate;
forming one color filter pattern on said photo-receiving region of said insulator layer;
depositing a conformal conductive layer on said partially fabricated device;
forming a photoresist layer on said conductive layer and transferring a pattern at least larger than said photo-sensitive region into said photoresist layer;
removing said conductive layer using said photoresist layer as a mask;
removing said photoresist layer; and
depositing a passivation layer on said partially fabricated device.
13. The method according to claim 12 , wherein said conductive layer is metal layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/344,762 US6376274B1 (en) | 1999-06-25 | 1999-06-25 | Process for producing photosensor with color filter |
| TW088111644A TW411631B (en) | 1999-06-25 | 1999-07-09 | Method for manufacturing photosensor with color filter |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/344,762 US6376274B1 (en) | 1999-06-25 | 1999-06-25 | Process for producing photosensor with color filter |
| TW088111644A TW411631B (en) | 1999-06-25 | 1999-07-09 | Method for manufacturing photosensor with color filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20020022298A1 true US20020022298A1 (en) | 2002-02-21 |
| US6376274B1 US6376274B1 (en) | 2002-04-23 |
Family
ID=26666711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US09/344,762 Expired - Fee Related US6376274B1 (en) | 1999-06-25 | 1999-06-25 | Process for producing photosensor with color filter |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6376274B1 (en) |
| TW (1) | TW411631B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060279649A1 (en) * | 2005-06-09 | 2006-12-14 | Cole Bryan G | Reduced imager crosstalk and pixel noise using extended buried contacts |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4948706A (en) * | 1987-12-30 | 1990-08-14 | Hoya Corporation | Process for producing transparent substrate having thereon transparent conductive pattern elements separated by light-shielding insulating film, and process for producing surface-colored material |
| US5212575A (en) * | 1988-08-30 | 1993-05-18 | Canon Kabushiki Kaisha | Functional substrate for controlling pixels |
| KR920013734A (en) * | 1990-12-31 | 1992-07-29 | 김광호 | Manufacturing method of color filter |
| JP2710292B2 (en) * | 1991-06-12 | 1998-02-10 | シャープ株式会社 | Solid-state imaging device |
| US5143855A (en) * | 1991-06-17 | 1992-09-01 | Eastman Kodak Company | Method for making contact openings in color image sensor passivation layer |
| US5719075A (en) * | 1995-07-31 | 1998-02-17 | Eastman Kodak Company | Method of making a planar charge coupled device with edge aligned implants and electrodes connected with overlying metal |
| US5677202A (en) * | 1995-11-20 | 1997-10-14 | Eastman Kodak Company | Method for making planar color filter array for image sensors with embedded color filter arrays |
| US5711890A (en) * | 1996-03-11 | 1998-01-27 | Eastman Kodak Company | Method for forming cylindrical lens arrays for solid state imager |
| US5718991A (en) * | 1996-12-27 | 1998-02-17 | Industrial Technology Research Institute | Method for making photomasks having regions of different light transmissivities |
| JPH10332920A (en) * | 1997-05-27 | 1998-12-18 | Sony Corp | Formation of color filter for color solid-state imaging device |
| US5914749A (en) * | 1998-03-31 | 1999-06-22 | Intel Corporation | Magenta-white-yellow (MWY) color system for digital image sensor applications |
-
1999
- 1999-06-25 US US09/344,762 patent/US6376274B1/en not_active Expired - Fee Related
- 1999-07-09 TW TW088111644A patent/TW411631B/en not_active IP Right Cessation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060279649A1 (en) * | 2005-06-09 | 2006-12-14 | Cole Bryan G | Reduced imager crosstalk and pixel noise using extended buried contacts |
| WO2006135720A1 (en) * | 2005-06-09 | 2006-12-21 | Micron Technology, Inc. | Reduced imager crosstalk and pixel noise using extended buried contacts |
| US7534982B2 (en) | 2005-06-09 | 2009-05-19 | Micron Technology, Inc. | Reduced imager crosstalk and pixel noise using extended buried contacts |
| US20090200628A1 (en) * | 2005-06-09 | 2009-08-13 | Cole Bryan G | Reduced imager crosstalk and pixel noise using extended buried contacts |
| US7884311B2 (en) | 2005-06-09 | 2011-02-08 | Micron Technology, Inc. | Imaging devices having a layer of pixel component material with discrete constructs for operating electrical pixel components and methods of forming the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW411631B (en) | 2000-11-11 |
| US6376274B1 (en) | 2002-04-23 |
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