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TWM374659U - Capacitive coupling type antenna device - Google Patents

Capacitive coupling type antenna device Download PDF

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Publication number
TWM374659U
TWM374659U TW98218335U TW98218335U TWM374659U TW M374659 U TWM374659 U TW M374659U TW 98218335 U TW98218335 U TW 98218335U TW 98218335 U TW98218335 U TW 98218335U TW M374659 U TWM374659 U TW M374659U
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TW
Taiwan
Prior art keywords
metal
antenna
metal piece
piece
grounding surface
Prior art date
Application number
TW98218335U
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Chinese (zh)
Inventor
Zhong-Hong Luo
jin-long Cai
Yuan-Zhi Lin
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Walsin Technology Corp
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Application filed by Walsin Technology Corp filed Critical Walsin Technology Corp
Priority to TW98218335U priority Critical patent/TWM374659U/en
Publication of TWM374659U publication Critical patent/TWM374659U/en

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Description

M374659 五、新型說明: 【新型所屬之技術領域】 本創作係關於一種應用在無線通訊的微型天線,尤指 一種可設在具金屬接地面之電路板的任何邊緣,而不再侷 - 限設於電路板角落處之電容耦合式天線裝置。 . 【先前技術】 請參考第七圖所示,天線裝置係為無線通訊裝置之必 >備文件,一般而言,在無線通訊裝置之電路板上會形成一 具有較大面積的金屬接地面(8〇),在電路板的其中一角落 處則額外規劃出一淨空區(81),天線(82)即設在該淨空區 (81)内。於淨空區(81)内不可放置其它金屬器件,以避免 天線(82)與電路板上其它元件形成干擾而影響天線的收發 特性。 然而現今無線通訊裝置在研發方向上,除了要求尺寸 輕薄短小以外,更期望具備更多功能,如此一來不僅線路 卜設§十的複雜度大為提高,且使用到的元件數量亦相對增 加,即使是電路板的角落也可能因設計需求,而必須設置 -天線(82)以外的電子零件,如此勢必得改變天線(82)之原 本設置位置,如此改變可能會造成淨空區(81)被迫縮小, 電磁干擾問題更明顯而降低天線(82)的輻射能力,信號收 發效果因此降低。當電路板上的金屬器件(如電池、Lcd 螢幕、丨/〇連接器…等)覆蓋住天線(82)時,不僅會使得該 天線(82)的頻率特性失調,同時,也會對輕射特性產生干 擾’造成天線(82)無法正常操作。 M374659 【新型内容】 • 由前述說明可知,現有天線被返侷限於電路板的角落 處’在貫際6又计無線通訊裝置產品時,不僅限制其它電子 零件之擺設位置,亦有可能干擾天線特性。 為此,本創作之主要目的係提供一種根據電路化架構 設計而成之電容輕合式天線裝置,係具有可調整阻抗匹配 •之機制,該天線可位於設有金屬接地面之電路板的任何邊 緣,而π再佢限於角落4,兼具較大收發頻寬以及高轄射 φ 效能。 為達成前述目的,本創作包含有· 一介質基板’其具有上下表面; …接地面,設置於介質基板上表面,該金屬接 面之邊緣非角落處設置一淨空區;M374659 V. New Description: [New Technology Field] This creation is about a miniature antenna used in wireless communication, especially on any edge of a circuit board with a metal ground plane. A capacitively coupled antenna device at the corner of the board. [Prior Art] Please refer to the seventh figure, the antenna device is a must-have file for the wireless communication device. Generally, a metal ground plane with a large area is formed on the circuit board of the wireless communication device. (8〇), a clearance area (81) is additionally planned at one corner of the circuit board, and the antenna (82) is disposed in the clearance area (81). No other metal devices may be placed in the clearance area (81) to prevent the antenna (82) from interfering with other components on the circuit board and affecting the transmission and reception characteristics of the antenna. However, in the research and development direction of today's wireless communication devices, in addition to requiring a small size and a small size, it is expected to have more functions, so that the complexity of the circuit is greatly improved, and the number of components used is relatively increased. Even the corners of the board may need to be set up outside the antenna (82) due to design requirements, so it is necessary to change the original setting position of the antenna (82). Such a change may cause the clearance area (81) to be forced. As the electromagnetic interference problem is more conspicuous, the radiation capability of the antenna (82) is lowered, and the signal transceiving effect is thus reduced. When the metal device on the board (such as battery, Lcd screen, 丨/〇 connector, etc.) covers the antenna (82), not only will the frequency characteristics of the antenna (82) be out of balance, but also light shots. The characteristic causes interference 'causing the antenna (82) to operate normally. M374659 [New Content] • As can be seen from the above description, the existing antenna is limited to the corner of the circuit board. When the wireless communication device product is used, it not only limits the position of other electronic components, but also may interfere with the antenna characteristics. . To this end, the main purpose of this creation is to provide a capacitive light-weight antenna device designed according to a circuitized architecture, which has an adjustable impedance matching mechanism, which can be located at any edge of a circuit board provided with a metal ground plane. The π-channel is limited to the corner 4, which has a large transmission and reception bandwidth and a high φ efficiency. In order to achieve the foregoing object, the present invention includes a dielectric substrate having an upper and lower surface; a ground plane disposed on an upper surface of the dielectric substrate, and a clearing region at a non-corner edge of the metal interface;

一輻射組件’係設置於金屬接地面上之淨空區内, 輻射組件係由一微波介質基底、第一金屬片與第二金屬 :構成的輕合金屬對及分別位於金屬接地面兩端之二短 成其中,金屬接地面與輻射組件以一饋入部相 接0 孩輻射組件之一側係為饋入部 係為電心饋人部饋人後” ^ 一短鲜 電流路句 曼岌第一金屬片氙入金屬接地s 仫,另—短路部係為電流經第一金屬片耦人至t 金屬片之感摩啻、’月锅〇至弟 = >这應電",L〜入糸統接地面之電流路徑。 效為1孟屬片與第二金屬片所構成之耦合金屬對可 為:電容,該電容值可調整整體天線之共振頻率。 “與饋入部同側之短路部,即電流由饋入部饋入 τ 屬片机入金屬接地面之電流路徑,該電流路徑可 等效為一電感’調整該電感值可調整整體天線之阻抗。 則述相對於饋入部端之另一短路部,即電流經第一金 耗5至第一金屬片之感應電流流入金屬接地面之電流 Χ該電〃 U*路徑可等效為一電感,調整該電感值可調整 天線之共振頻率。 ^错此,經由控制第一金屬片與第二金屬片之間的耦合 I而決疋該耦合電容之大小,並配合適當的共振頻率調整 電感可調整天線共振頻率。另外,亦可藉由變化該阻抗匹 -調正電感之大小,而調整天線之阻抗匹配程度,達成良 好之輻射效能。使本發明之天線裝置具有較佳的阻抗頻寬 特性以及輻射效能。 【實施方式】 請參閱第-圖所示,為本創作之等效電路,包含有一 串聯k路(1)、-並聯共振單元(2)、一輻射電阻(R「)及一共 振頻率調整電感(L3)。 '、 該串聯迴路(1)包含有4合電容(C1)及—串接在該竊 合電容(C1)之接地之間的阻抗匹配 、該並聯共振單元⑺係由一電感(L2)及感二 構成,該並聯共振單元(2)進一步並聯該輻射電阻…。與共 振頻率調整電感(L3)之後再共同連接至耗合電容(ci)的其 中一端。 請參考第二 '三圖所示,本創作係包含有 一微波介質基板(100),係具有上下表面,於其上表面 M374659 係設置一金屬接地面(101),該金屬接地面(1 01)之側邊非 角落處係形成一淨空區(1〇2)及一饋入埠(103),其中該金 屬接地面(101)及位於側邊的淨空區(1〇2)可等效成為第一 圖中的並聯共振單元(2); 一輻射組件,係設於該介質基板(1〇〇)之淨空區(彳〇2) 内,其中該輻射組件係於一微波介質基板(1〇)上設置一耦 合金屬對及兩短路部所構成,輻射組件係電性連接至金屬 接地面(101)及饋入埠(1 03),其耦合金屬對及兩短路部可 等效構成第一圖所示的耦合電容(C1)、阻抗匹配調整電感 (L1)及共振頻率調整電感(L3);該饋入埠(1〇3)係透過一訊 號饋入組件(110)與金屬接地面(101)連接,該訊號饋入組件 (110)可為同軸傳輸線、微帶線、共平面波導或SMA接頭。 該微波介質基板(10)上的耦合金屬對可藉由多種方式 達成’於以下說明中將逐一介紹數種實施方式: 請參考第四圖所示,為採用寬邊耦合(Broadside couple)方式貫現電容耦合,係於該微波介質基板(1〇)之 上、下表面形成有特定圖案的金屬片,再於微波介質基板(10) 中設有連接上、下表面金屬片的導電結構,其中: 該微波介質基板(10)的一側係作為一饋入部側,而上 表面形成有一第一金屬片(2〇),該第—金屬片(2〇)包含一 、’’勺覆蓋在Μ波介質基板(1 〇)上表面中段的第一矩形部 (21)由第一矩形部(21)其中一側邊係向微波介質基板(1〇) 同側的兩角落延伸兩接觸部(22),兩接觸部(22)之間維持 有一未受第一金屬片(2〇)覆蓋之間隔區(23); 該微波介質基板(10)下表面形成有—第二金屬片 M374659 (30),該第二金屬片(30)包含一約覆蓋在微波介質基板(1 〇) 下表面中段的第二矩形部(31),該第二矩形部(31)以相對 於接觸部(22)的其中一邊係朝微波介質基板(1〇)其中一角 落延伸一接地部(32),該接地部(32)之延伸方向係與接觸 部(22)之延伸方向相反且電性連接至金屬接地面(1〇1.); 於該微波介質基板(10)之下表面的兩側進一步形成有 一對端電極(41)(42),分別作為一饋入接點及—導電接點, 該對端電極(41)(42)係形成在微波介質基板(1〇)同側的兩角 落處,分別對應第一金屬片(2〇)的兩接觸部(22),其中一 端電極(41)係與介質基板(1〇〇)上的饋入埠(1〇3)電性連 接,另一端電極(42)係與金屬接地面(i〇«j)連接; 前述兩接觸部(22)與該對端電極(41 )(42)係以導電结構 構成電性連接,例如在本實施例中係以埋設在微波介質°基 板導電柱(抑52)分料接㈣部(22)與端電^ 41=2);除了使用導電柱(51) (52)之外亦可在微波介 質基板(10)側邊形成側面電極來達成電連接目的。 -全饋? _)饋入後,經由導電柱(5”流經第 二屬:),並與第二金屬片(3〇)等效構成輕合電容 ),4射組件之兩端係分別形成短路 部係輻射組件之饋人1彳0|| & # ,、中—紐路 徑,即第-金屬= 屬片(2〇)相連之電流路 上的電流流經導電柱1¾ ί ^ ® 接地面(101),如路4 Α Μ _ (52)而至金屬 匹配調整電感(L1)另::’此段路線可等效為該阻抗 即電流經第-金屬二=係位於饋入部之相對側, 流入金屬接地面(1 —金屬片(30)之感應電流 電,,L路徑,可等效為該共振頻率調 整電感(L3)。 故可經由控制第—今眉 屬片(20)與第二金屬片(30)之間 的輕合量而決定耦合電容(C1 (Ί)之大小,並配合適當的共振 頻率調整電感(L3)而調整天续丑招相.玄, 天線,、振頻率。另外,亦可藉由 調整路線Α之長戶以鍵/μ & 、 又變化該阻抗匹配調整電感(L1)之大 小,進而調整天線之阻抗匹 ^^ α ^配程度,達成良好之輻射效能。A radiating element is disposed in a clearance area on a metal ground plane, and the radiating element is composed of a microwave dielectric substrate, a first metal piece and a second metal: a light metal pair and two ends respectively on the metal ground plane In the short form, the metal ground plane and the radiating component are connected to a feeding part, and one side of the radiation component is fed to the electric feeding part of the feeding part. ^ A short fresh current road The chip breaks into the metal ground s 仫, and the short-circuit is the current through the first metal piece coupled to the metal piece of the t-metal, 'moon pot 〇 to the brother = > this should be electric ", L ~ 糸The current path of the ground plane is as follows: the coupling metal pair formed by the 1st piece and the second metal piece can be: a capacitor, the capacitance value can adjust the resonance frequency of the whole antenna. "The short circuit part on the same side as the feeding part, That is, the current is fed from the feeding portion into the current path of the τ piece machine into the metal ground plane, and the current path can be equivalent to an inductance 'adjusting the inductance value to adjust the impedance of the whole antenna. Referring to the other short-circuit portion of the feed portion, that is, the current flowing through the first gold consumption 5 to the first metal piece into the metal ground plane, the current U* path can be equivalent to an inductance, and the adjustment The inductance value adjusts the resonant frequency of the antenna. In this case, the coupling resonance frequency is controlled by controlling the coupling I between the first metal piece and the second metal piece, and the antenna resonance frequency can be adjusted by adjusting the inductance with an appropriate resonance frequency. In addition, by changing the magnitude of the impedance-correcting inductance, the impedance matching of the antenna can be adjusted to achieve good radiation performance. The antenna device of the present invention has better impedance bandwidth characteristics and radiation efficiency. [Embodiment] Please refer to the figure - figure, the equivalent circuit of this creation, including a series k-way (1), - parallel resonance unit (2), a radiation resistance (R ") and a resonance frequency adjustment inductance (L3) ', the series circuit (1) includes a 4-capacitance capacitor (C1) and - impedance matching between the ground of the stealing capacitor (C1), and the parallel resonance unit (7) is composed of an inductor ( L2) and Sense 2, the parallel resonance unit (2) is further connected in parallel with the radiation resistance.... and the resonance frequency adjustment inductance (L3) is then connected to one end of the consuming capacitance (ci). Please refer to the second 'three As shown in the figure, the present invention comprises a microwave dielectric substrate (100) having upper and lower surfaces, and a metal ground plane (101) is disposed on the upper surface M374659, and the side of the metal ground plane (1 01) is not a corner. Forming a clearance area (1〇2) and a feed port (103), wherein the metal ground plane (101) and the clearance area (1〇2) at the side are equivalent to the parallel resonance in the first figure. Unit (2); a radiation component disposed on the clearance area of the dielectric substrate (1〇〇)彳〇2), wherein the radiating element is formed on a microwave dielectric substrate (1〇), and is provided with a coupling metal pair and two short-circuit portions, and the radiation component is electrically connected to the metal ground plane (101) and the feeding port. (1 03), the coupling metal pair and the two short-circuit portions can be equivalently configured to form a coupling capacitor (C1), an impedance matching adjustment inductor (L1), and a resonance frequency adjustment inductor (L3) shown in the first figure; 1〇3) is connected to the metal ground plane (101) through a signal feeding component (110), and the signal feeding component (110) can be a coaxial transmission line, a microstrip line, a coplanar waveguide or an SMA joint. The pair of coupled metals on the substrate (10) can be achieved in a variety of ways. Several embodiments will be introduced one by one in the following description: Please refer to the fourth figure for the capacitive coupling of the Broadside couple. a metal sheet having a specific pattern formed on the lower surface of the microwave dielectric substrate (1 〇), and a conductive structure connecting the upper and lower surface metal sheets in the microwave dielectric substrate (10), wherein: the microwave One side of the dielectric substrate (10) a feed portion side, and a first metal piece (2〇) is formed on the upper surface, and the first metal piece (2〇) includes a first cover of the upper surface of the chopper dielectric substrate (1 〇). A rectangular portion (21) has two contact portions (22) extending from one side of the first rectangular portion (21) toward the same side of the microwave dielectric substrate (1), and a contact portion (22) is maintained between the two contact portions (22). a spacer (23) not covered by the first metal piece (2); a lower surface of the microwave dielectric substrate (10) is formed with a second metal piece M374659 (30), and the second metal piece (30) includes an approximately Covering a second rectangular portion (31) of a middle portion of the lower surface of the microwave dielectric substrate (1 〇), the second rectangular portion (31) being directed toward the microwave dielectric substrate (1 相对) with respect to one side of the contact portion (22) a corner extending to a grounding portion (32) extending in a direction opposite to the extending direction of the contact portion (22) and electrically connected to the metal ground plane (1〇1.); (10) A pair of end electrodes (41) (42) are further formed on both sides of the lower surface, respectively as a feed contact and - conductive connection Point, the opposite end electrodes (41) (42) are formed at two corners on the same side of the microwave dielectric substrate (1〇), respectively corresponding to the two contact portions (22) of the first metal piece (2〇), wherein the one end electrode (41) is electrically connected to the feeding port (1〇3) on the dielectric substrate (1〇〇), and the other end electrode (42) is connected to the metal ground plane (i〇«j); the two contact portions ( 22) electrically connecting the opposite end electrode (41) (42) with a conductive structure, for example, in the embodiment, embedding in the microwave medium, the substrate conductive column (52), and the sub-portion (4) (22) And the terminal electrode ^ 41 = 2); in addition to using the conductive pillars (51) (52), side electrodes may be formed on the side of the microwave dielectric substrate (10) to achieve electrical connection. - Full feed? _) after feeding, through the conductive column (5" flowing through the second genus:), and equivalent to the second metal piece (3 〇) to form a light-combined capacitor), the two ends of the four-shot component respectively form a short-circuit portion The radiation component feeds 1彳0|| &# , , the middle-new path, that is, the current on the current path connected by the first metal = the piece (2〇) flows through the conductive column 13⁄4 ί ^ ® ground plane (101) , such as road 4 Α Μ _ (52) and metal matching adjustment inductance (L1) Another:: 'This route can be equivalent to the impedance, that is, the current through the first - metal two = system is located on the opposite side of the feed portion, into the metal The grounding surface (1 - the induced current of the metal piece (30), the L path, can be equivalent to the resonant frequency adjusting inductance (L3). Therefore, it can be controlled by the first-eye piece (20) and the second metal piece. (30) The amount of coupling between the capacitors (C1 (Ί) and the appropriate resonant frequency adjustment inductance (L3) to adjust the ugly phase. Xuan, antenna, vibration frequency. In addition, It is also possible to adjust the inductance of the antenna by adjusting the size of the impedance matching key (μ1) by adjusting the distance/μ & ^^ α ^ degree, to achieve good radiation performance.

0月參考附件一,為·4ιϊ >6t 'C 為本創作返回損失之特性曲線;附件二〜 四係本創作X-Y、Y_Z月y 7 τ _Ζ平面之水平極化分量(Η)、垂 直極化分量(V)之特性曲線圖。 >考寸件五所示,當變換該阻抗匹配調整電感(L” 的大小時,天線阻抗亦隨之改變,其中附件五.pH。) 二圖係分別表示該阻抗匹配電感(L2)最大、次之、最小改 變時的史密斯圖。 請參考附件六所示,當蠻拖 田1換5亥共振頻率調整電感(L3) 的大,天線的共振頻率可獲得改變,其中附件六(八)、 ^ C)一圖係刀別表不該共振頻率電感(L3)最大、次之、 最小改變時的返回損失特性。 如第五圖所不’係本創作電容耦合機制第二實施例之 立體圖,其採用邊缝 、 木用違緣耦合(Edge couple)方式,與第一實例 之差異在於s亥第一金屬片(2〇a);5楚_ a θ 喝乃VUa)及第一金屬片(30a)皆是形 ::微波介質基板(1〇)的上表面,惟第二金屬片啊)係與 金屬片(2〇a)之間形成有一中隔區(6〇卜微波介質基板 ()下表面則是在四個角、落分別形成端電極(41)(42),其中 一端電極(41)係作為—饋掊 貝接點以與饋入部(1〇3)連接。 第金屬片(20a)同樣维持有第一矩形部(2叫及兩接 M374659 觸部(22a)’兩接觸部(22a)之間具有—間隔區(23);第二 金屬片(3Ga)係完全為矩形’延伸覆蓋至微波介質基板(10) 的另-側。在微波介質基板(10)的四個角落係形成有導電 結構’例如第二實施例中便是在四個角落形成有四個導電 柱WHM),除了使用導電柱,亦可使用側面電極來達成 電性連接目的。 該第-金屬片(2〇a)及第二金屬片(3〇a)之間係等效構 成麵合電容(C1);圖中所示路徑B料效構絲抗匹配調 整電感㈣,該路徑B代表第一金屬片(2〇a)上的電流亦流 經導電柱(52)而至金屬接地面(1〇1);同樣的,如路徑c所 不,電流耦合至第二金屬片(30a)並經由導電柱(54)而連接 至金屬接地面(101)之路徑可等效為該共振頻率調整電感 (L3)〇 ^ 請參考第六圖所示,係本創作電容耦合機制之第三實 施例,同時採用前述邊緣耦合及寬邊耦合兩種作法,相較 於第二實施例係增加一第三金屬片(7〇),該第三金屬片(7〇) 係形成於微波介質基板(10)内部,該第三金屬片(7〇)呈矩 形,係由第二金屬片(30b)朝第一金屬片(2〇b)之方向延伸, 且其面積大於該第一金屬片(2〇b)及第二金屬片(3〇b)。圖 中所示的傳導路徑D係等效構成阻抗匹配調整電感(L彳); 等效輕合電容(ci)則由第一金屬片(2〇b)及第二金屬片(3〇b) 之間的耦合關係加上第一金屬片(20b)與第三金屬片(7〇)之 間的輕合關係等效構成,如路徑E所示;而圖中之路徑f 係等效構成共振頻率調整電感(L3)。 综上所述,本創作之天線裝置可依據需求調整等效電 感、 該天線 緣, 致能 合等參數,使天線具有阻抗匹配與頻率調節功能, 裝置可位於設有金屬接地面之介質基板的任何邊 不再侷限於角落處,兼具較大收發頻寬以及高輻射 【圖式簡單說明】 第一圖:係本創作之等效電路圖。 圖.係本創作第一實施例之立體圖。 第一圖.係第二圖之局部放大圖。 圖 四圖:係本創作電容耦合機制第一實施例之立體 圖 圖 第 五圖:係本創作電容耦合機制第二實 第圖.係本創作電容耦合機制第三實 施例之立體 施例之示意 圖 第七圖:係一習知天線設於 電路板角落的平面示意 附件 附件 :係本創作返回損失之特性曲線。 直極化分旦二本創作m面之水平極化分量(η)、垂 里(V)之特性曲線圖。 附件=*及丄 直極化分二創作Y_Z平面之水平極化分量(H)、垂 刀里(V)之特性曲線圖。 附件四:在^丄 直極化分旦創作Χ_Ζ平面之水平極化分量⑴)、垂 刀里(V)之特性曲線圖。 附件五:往+ '、創作經由調整電感(L2)獲得不同天線阪 M374659 抗之史密斯圖。 附件六:係本創作經由調整電感(L3)獲得不同共振頻 率之返回損失特性曲線圖。 【主要元件符號說明】 (100) 介質基板 (101) 金屬接地面 (102) 淨空區 (103) 饋入埠 (110)訊號饋入組件 (10)微波介質基板 (20) (20a)(20b)第一金屬片 (21) (21a)(21b)第一矩形部 (22) (22a)(22b)接觸部 (2 3)間隔區 (30) (30a)(30b)第二金屬片 (31) 第二矩形部 (32) 接地部 (41)(42)端電極 (51)(52)(53)(54)導電柱 (60)中隔區 (70)第三金屬片 (80) 金屬接地面 (81) 淨空區 (82) 天線 11 M374659 (C1)耦合電容 (C2)電容 (L1)阻抗匹配調整電感 (L2)電感 (L3)共振頻率調整電感 (Rr)輻射電阻Refer to Annex 1 for 0, for 4ιϊ >6t 'C is the characteristic curve of the return loss of the creation; Annex II ~ Four series of the XY, Y_Z month y 7 τ _ Ζ plane horizontal polarization component (Η), vertical pole Characteristic curve of the component (V). > As shown in the test piece 5, when the impedance matching adjustment inductance (L" is changed, the antenna impedance also changes, which is shown in Appendix V. pH.) The two figures indicate that the impedance matching inductance (L2) is the largest. Second, the minimum change in the Smith chart. Please refer to Annex VI, when the barley field 1 change 5 Mah resonance frequency adjustment inductance (L3) is large, the antenna resonance frequency can be changed, of which Annex VI (eight) , ^ C) The picture shows the return loss characteristic of the maximum, the second, and the smallest change of the resonant frequency inductance (L3). As shown in the fifth figure, the perspective view of the second embodiment of the capacitive coupling mechanism is It adopts the edge joint and the edge couple method, and the difference from the first example is that the first metal piece (2〇a); 5C_a θ is VUa) and the first metal piece ( 30a) are all shaped:: the upper surface of the microwave dielectric substrate (1 〇), but the second metal sheet) and the metal sheet (2〇a) form a middle partition (6 〇 microwave dielectric substrate () The lower surface is formed at four corners and falls to form a terminal electrode (41) (42), wherein one end electrode (4) 1) is used as a feeding contact to connect with the feeding portion (1〇3). The first metal piece (20a) also maintains the first rectangular portion (2 and two M374659 contact portions (22a)' There is a spacer (23) between (22a); the second metal piece (3Ga) is completely rectangular and extends over the other side of the microwave dielectric substrate (10). In the four corners of the microwave dielectric substrate (10) The conductive structure is formed. For example, in the second embodiment, four conductive pillars WHM are formed at four corners. In addition to the conductive pillars, the side electrodes may be used for electrical connection purposes. 2〇a) and the second metal piece (3〇a) are equivalent to form a surface capacitance (C1); the path B material effect wire is matched with the matching inductance (4), and the path B represents the first metal. The current on the piece (2〇a) also flows through the conductive post (52) to the metal ground plane (1〇1); likewise, as the path c does not, the current is coupled to the second metal piece (30a) and via the conductive The path of the column (54) connected to the metal ground plane (101) can be equivalent to the resonance frequency adjustment inductance (L3) 〇 ^ Please refer to the sixth figure, The third embodiment of the capacitive coupling mechanism of the present invention adopts the foregoing two methods of edge coupling and wide-side coupling, and a third metal piece (7〇) is added compared with the second embodiment, the third metal piece ( 7〇) is formed inside the microwave dielectric substrate (10), the third metal piece (7〇) is rectangular, extending from the second metal piece (30b) toward the first metal piece (2〇b), and The area is larger than the first metal piece (2〇b) and the second metal piece (3〇b). The conduction path D shown in the figure is equivalent to the impedance matching adjustment inductance (L彳); the equivalent light combination capacitance (ci) by the coupling relationship between the first metal piece (2〇b) and the second metal piece (3〇b) plus between the first metal piece (20b) and the third metal piece (7〇) The equivalent structure of the light-combining relationship is shown as path E; and the path f in the figure is equivalent to form the resonant frequency adjusting inductance (L3). In summary, the antenna device of the present invention can adjust the equivalent inductance, the antenna edge, and the coupling parameters according to requirements, so that the antenna has impedance matching and frequency adjustment functions, and the device can be located on the dielectric substrate provided with the metal ground plane. Any side is no longer confined to the corner, and has a large transmission and reception bandwidth and high radiation. [Simple description of the figure] The first picture: the equivalent circuit diagram of this creation. Figure is a perspective view of the first embodiment of the present creation. The first figure is a partial enlarged view of the second figure. Fig. 4 is a perspective view of the first embodiment of the present invention. The fifth diagram is the second embodiment of the capacitive coupling mechanism of the present invention. Figure 7: A schematic attachment attached to a corner of a circuit board. This is the characteristic curve of the return loss of this creation. The linear polarization component (η) and the vertical (V) characteristic curve of the m-plane are created by direct polarization. Attachment = * and 直 Direct polarization is divided into two to create the characteristic curve of the horizontal polarization component (H) and the vertical turret (V) of the Y_Z plane. Annex IV: The characteristic curve of the horizontally polarized component (1)) and the vertical turret (V) of the Χ_Ζ plane is created in the direct polarization of the 丄. Annex 5: Go to + ', create a Smith chart with different antennas by adjusting the inductance (L2). Annex VI: This is the return loss characteristic curve of the different resonant frequencies obtained by adjusting the inductance (L3). [Main component symbol description] (100) Dielectric substrate (101) Metal ground plane (102) Clearance area (103) Feed 埠 (110) Signal feed assembly (10) Microwave dielectric substrate (20) (20a) (20b) First metal piece (21) (21a) (21b) first rectangular portion (22) (22a) (22b) contact portion (23) spacer (30) (30a) (30b) second metal piece (31) Second rectangular portion (32) Ground portion (41) (42) Terminal electrode (51) (52) (53) (54) Conductive column (60) Middle partition (70) Third metal piece (80) Metal ground plane (81) Clearance area (82) Antenna 11 M374659 (C1) Coupling capacitor (C2) Capacitance (L1) Impedance matching Adjusting inductance (L2) Inductance (L3) Resonance frequency adjustment Inductance (Rr) Radiation resistance

1212

Claims (1)

六、申請專利範圍: 1·—種電容耦合式天線裝置,包含: 一介質基板,其具有上下表面; -金屬接地面,設置於介質基板上表面,該金屬接地 面之邊緣非角落處設置一淨空區; 一輻射組件,係設置於金屬接地面上之淨空區内,該 2 件係由—微波介質基底、第一金屬片與第二金屬片 斤構成㈣合金錢及Μ位於金屬接 :所組成,其中,金屬接地面與輕射組件以:二連 2·如中請專利範圍帛彳項所述之電容輕合式天線裝 发該H射組件之-側料饋人㈣,前述其中—短路部 雷二電流由饋入部饋入後經第一金屬片流入金屬接地面之 金机路杈,另一短路部係為電流經第一金屬片耦合至第二 屬片之感應電流流入金屬接地面之電流路徑。 置 為 置 第 3·如申請專利範圍第1項所述之電容耦合式天線裝 第一金屬片與第二金屬片所構成之耦合金屬對可等2 電容,該電容值可調整整體天線之共振頻率。 4·如申請專利範圍第2項所述之電容耦合式天線裝 位於該饋入部側之短路部,即電流由饋入部饋入後經 敦金屬片流入金屬接地面之電流路徑,該電流路徑可 ,為一電感,調整該電感值可調整整體天線之阻抗。 置,5.如申請專利範圍第2項所述之電容耦合式天線裝 耦八相對於饋入部側之另一短路部,即電流經第—金屬^ 合至第二金屬片之感應電流流入金屬接地面 〜电流路 13 M3 74659 徑,該電流路徑可等效為一電感,調整該電感值可調整天 線之共振頻率。 6. 如申請專利範圍第,項所述之電 置’該饋入部係透過'大踝裝 7. 如申請專鮮円 組件與金屬接地面連接。 j範圍第6項所述之電 人 置,該訊號饋入組件係可 耦》式天線裝 波導或SMA接頭。 ^嗥试帶線、共平面Sixth, the scope of application for patents: 1 - a capacitive coupling antenna device, comprising: a dielectric substrate having upper and lower surfaces; - a metal ground plane disposed on the upper surface of the dielectric substrate, the edge of the metal grounding surface is provided at a non-corner a clearing component; a radiating component is disposed in the clearance area of the metal grounding surface, and the two parts are composed of a microwave dielectric substrate, a first metal piece and a second metal piece (4) alloy money and a metal connection: The composition, wherein the metal grounding surface and the light-emitting component are: two-connected. 2. The capacitive light-weight antenna as described in the patent scope of the present invention is equipped with the H-beam component-side material feeder (four), the aforementioned one--short circuit The second lightning current is fed by the feeding portion and flows into the metal grounding path of the metal grounding surface via the first metal piece, and the other short circuit portion is an induced current flowing into the metal grounding surface through which the current is coupled to the second partial piece through the first metal piece. Current path. The third embodiment is as follows: The coupling metal pair of the first metal piece and the second metal piece of the capacitive coupling type antenna according to claim 1 of the patent application scope can be equal to two capacitors, and the capacitance value can adjust the resonance of the whole antenna. frequency. 4. The capacitive coupling antenna according to item 2 of the patent application is located at the short-circuit portion of the feeding portion side, that is, the current path that the current is fed by the feeding portion and flows into the metal grounding surface through the metal piece, and the current path can be As an inductance, adjusting the inductance value can adjust the impedance of the overall antenna. 5. The capacitive coupling antenna assembly 8 described in claim 2 is opposite to the other short-circuit portion on the side of the feed portion, that is, the current flowing through the first metal to the second metal piece flows into the metal. Grounding surface ~ current path 13 M3 74659 diameter, the current path can be equivalent to an inductance, adjust the inductance value to adjust the resonant frequency of the antenna. 6. If the application of the scope of the patent, the electric appliance of the item, is transmitted through the 'large armor. 7. If the application is made, the component is connected to the metal grounding surface. The electrical device described in item 6 of the j range, the signal feeding component is a coupleable antenna-mounted waveguide or SMA connector. ^嗥Test strip line, common plane 七、圖式·(如次頁) 14Seven, schema · (such as the next page) 14
TW98218335U 2009-10-06 2009-10-06 Capacitive coupling type antenna device TWM374659U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI628846B (en) * 2013-11-30 2018-07-01 群邁通訊股份有限公司 Antenna structure and wireless communication device having the same
US11395381B2 (en) 2017-01-10 2022-07-19 Panasonic Holdings Corporation Electromagnetic field distribution adjustment device and microwave heating device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI628846B (en) * 2013-11-30 2018-07-01 群邁通訊股份有限公司 Antenna structure and wireless communication device having the same
US11395381B2 (en) 2017-01-10 2022-07-19 Panasonic Holdings Corporation Electromagnetic field distribution adjustment device and microwave heating device

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