TWI824817B - 電子封裝件及其製法 - Google Patents
電子封裝件及其製法 Download PDFInfo
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- TWI824817B TWI824817B TW111143241A TW111143241A TWI824817B TW I824817 B TWI824817 B TW I824817B TW 111143241 A TW111143241 A TW 111143241A TW 111143241 A TW111143241 A TW 111143241A TW I824817 B TWI824817 B TW I824817B
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Abstract
一種電子封裝件,係將電子元件與虛晶片嵌埋於包覆層中,以於大型整版面之製程中,藉由該虛晶片抑制該包覆層與該第一電子元件之間因CTE不匹配所造成的翹曲。
Description
本發明係有關一種半導體裝置,尤指一種覆晶封裝型式之電子封裝件及其製法。
隨著科技的演進,電子產品需求趨勢朝向異質整合邁進,為此,多晶片封裝模組(multi-chip module,MCM)/(multi-chip package,MCP)逐漸興起。
如圖1所示之半導體封裝件1,係將複數半導體晶片11結合至一線路結構16上,且以封裝膠體15包覆該些半導體晶片11,並使該線路結構16藉由複數導電元件17設於一封裝基板10上,且該封裝基板10可藉由複數銲球19接置於一電路板(圖略)上。俾藉由將多顆半導體晶片11封裝成單一結構的特性,使其具有較多的I/O數,且可以大幅增加處理器的運算能力,減少訊號傳遞的延遲時間,以應用於高密度線路/高傳輸速度/高疊層數/大尺寸設計之高階產品。
惟,習知半導體封裝件1於封裝過程中,該封裝膠體15係為晶圓形式(wafer form)版面,其於溫度循環(temperature cycle)或應力變化
時,如通過回銲爐、或經歷落摔等製程或測試時,該封裝膠體15與該半導體晶片11之間容易因熱膨脹係數(Coefficient of thermal expansion,簡稱CTE)差異(Mismatch),而使該封裝膠體15發生翹曲(warpage),造成該半導體晶片11與該封裝膠體15之間發生裂縫,甚至造成該半導體晶片11碎裂,導致產品良率降低。
因此,如何克服上述習知技術的種種問題,實已成目前亟欲解決的課題。
鑑於上述習知技術之種種缺失,本發明係提供一種電子封裝件,係包括:包覆層,係具有相對之第一表面與第二表面;第一電子元件,係嵌埋於該包覆層中,其中,該第一電子元件係具有相對之作用面與非作用面,該作用面上具有複數導電體;第一結合層,係嵌埋於該包覆層中並結合於該非作用面上,以令該第一結合層齊平該包覆層之第二表面;虛晶片,係以間隔該第一電子元件之方式嵌埋於該包覆層中,以令該虛晶片之表面齊平該包覆層之第一表面;第二結合層,係嵌埋於該包覆層中並結合於該虛晶片上,以令該第二結合層齊平該包覆層之第二表面,其中,該第一結合層之厚度係小於該第二結合層之厚度;以及線路結構,係設於該包覆層之第一表面上以電性連接該第一電子元件。
本發明亦提供一種電子封裝件之製法,係包括:將第一電子元件藉由第一結合層設於一承載件上,且將虛晶片藉由第二結合層設於該承載件上,以令該第一電子元件與該虛晶片係相互間隔排設,其中,該第一電子元件係具有相對之作用面與非作用面,該作用面上具有複數導電體,
且該第一電子元件以其非作用面結合該第一結合層,以令該第一結合層之厚度小於該第二結合層之厚度,且該第一電子元件相對該承載件之高度係等於或小於該虛晶片相對該承載件之高度;形成包覆層於該承載件上,以令該包覆層包覆該第一電子元件與該虛晶片,其中,該包覆層係具有相對之第一表面與第二表面,且該包覆層以其第二表面結合至該承載件上,並使該複數導電體之端面與該虛晶片之表面齊平該包覆層之第一表面;形成線路結構於該包覆層之第一表面上,以令該線路結構電性連接該第一電子元件而未電性連接該虛晶片;以及移除該承載件,以令該第一結合層與該第二結合層齊平該包覆層之第二表面。
前述之電子封裝件及其製法中,該承載件係藉由介電保護層接觸結合該包覆層之第二表面、該第一結合層與該第二結合層。
前述之電子封裝件及其製法中,該虛晶片與該第二結合層之總厚度係等於該第一電子元件與該第一結合層之總厚度。
前述之電子封裝件及其製法中,復包括將第二電子元件設於該線路結構上並電性連接該線路結構。例如,該第二電子元件係為橋接元件,以藉由該線路結構電性橋接該第一電子元件與另一電性連接該線路結構之電子元件。
進一步,可包括形成導電柱於該線路結構上,並使該導電柱電性連接該線路結構。又包括以封裝層包覆該導電柱與該第二電子元件,以令該導電柱之端面齊平於該封裝層之表面以外露於該封裝層。另包括形成佈線結構於該封裝層上,且該佈線結構係電性連接該導電柱。復包括形成複數導電元件於該佈線結構上。
前述之電子封裝件及其製法中,復包括形成複數導電元件於該線路結構上。
由上可知,本發明之電子封裝件及其製法中,主要藉由該虛晶片之配置,以抑制該包覆層與該第一電子元件之間因CTE不匹配所造成的翹曲,故本發明能防止大型整版面之承載件或該包覆層發生翹曲。
再者,藉由該第二結合層之厚度大於該第一結合層之厚度,以減少該包覆層之用量而縮減該包覆層之體積占比,因而能進一步提升防翹曲之效能。
又,藉由該虛晶片與該第二結合層之總厚度不小於(等於或大於)該第一電子元件與該第一結合層之總厚度,以於該包覆層經整平製程後,使該虛晶片之表面粗糙度較佳的矽材質之表面外露,以改善後續堆疊於上的線路結構的塗佈狀況,因而能有效提高產品信賴性。
1:半導體封裝件
10,40:封裝基板
11:半導體晶片
15:封裝膠體
16,26:線路結構
17,27,29:導電元件
19,42:銲球
2,2a,2b,3,3a:電子封裝件
20:承載件
200:離形層
201:介電保護層
21:第一電子元件
21a:作用面
21b:非作用面
210:電極墊
211:導電體
212:絕緣層
22,32:第二電子元件
220:導電凸塊
23:導電柱
23a:端面
24:封裝層
24a,28a,28b:表面
25:包覆層
25a:第一表面
25b:第二表面
260,300:介電層
261:線路層
262,302:電性接觸墊
28:虛晶片
30:佈線結構
301:線路重佈層
321:導電凸塊
91:第一結合層
92:第二結合層
92:第二結合層
D1,D2:總厚度
d0,d1,d2,t1,t2:厚度
h1,h2:高度
圖1係為習知半導體封裝件之剖面示意圖。
圖2A至圖2D係為本發明之電子封裝件之第一實施例之製法的剖視示意圖。
圖2A-1係為圖2A之另一製作方式的剖視示意圖。
圖2A-2係為圖2A之上視示意圖。
圖2E係為圖2D之後續製程的剖視示意圖。
圖2E-1係為圖2E之其它態樣的剖視示意圖。
圖3A至圖3G係為本發明之電子封裝件之第二實施例之製法的剖視示意圖。
圖3H係為圖3G之後續製程的剖視示意圖。
圖4係為圖2E-1之後續製程的剖視示意圖。
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如「上」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。
圖2A至圖2D係為本發明之電子封裝件2之第一實施例之製法之剖視示意圖。
如圖2A所示,將複數第一電子元件21藉由第一結合層91設於一承載件20上,且將至少一虛晶片(dummy die)28藉由第二結合層92設於該承載件20上(如圖2A-2係顯示在承載件20上設置有複數第一電子元件21與複數虛晶片28),其中,該第一結合層91之厚度t1係小於該第二結合層92之厚度t2,且該第一電子元件21相對該承載件20之高度h1係等於或小於該虛晶片28相對該承載件20之高度h2。
所述之承載件20可選用金屬板或半導體板材(如晶圓或玻璃板)。於本實施例中,其表面可依序形成有一離形層200與一介電保護層201。
所述之第一電子元件21係為主動元件、被動元件或其二者組合,且該主動元件係例如半導體晶片,而該被動元件係例如電阻、電容及電感。
於本實施例中,該第一電子元件21係為半導體晶片,其基材本體具有相對之作用面21a與非作用面21b,該作用面21a具有複數電極墊210,且該第一電子元件21係以其非作用面21b藉由該第一結合層91黏固於該承載件20之離形層200上,並於該複數電極墊210上結合有複數凸塊狀導電體211,以令該第一電子元件21之厚度d1係定義為自該非作用面21b至該導電體211之端面之間的距離。
再者,該作用面21a上可形成一包覆該複數導電體211之絕緣層212,如圖2A-1所示,以令該絕緣層212之頂表面與該導電體211之端面相互齊平,使該導電體211外露於該絕緣層212。應可理解地,該第一電子元件21之厚度d1亦可定義為自該非作用面21b至該絕緣層212之頂表面之間的距離。
又,形成該絕緣層212之材質係為如聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)或其它介電材。
所述之虛晶片28係為無傳輸訊號功能之半導體材塊體,其厚度d2係小於該第一電子元件21之厚度d1,使該虛晶片28與該第二結合層92之總厚度D2等於或大於該第一電子元件21與該第一結合層91之總厚度D1。
於本實施例中,該虛晶片28之厚度d2係等於該第一電子元件21之基材本體之厚度d0,以利於藉由同一晶圓同時製作該第一電子元件21之基材本體與該虛晶片28。應可理解地,該第一電子元件21之基材本體於後續製程係形成該些導電體211(及該絕緣層212),而該虛晶片28則無需製作該些導電體211(及該絕緣層212)。
再者,該虛晶片28係依據製程中應力分布情況排設,以防止該承載件20及其上之整體結構於後續製程中因應力分布不均而發生翹曲之問題,如圖2A-2所示之排設於該承載件20之邊緣處。
另外,該第一結合層91與該第二結合層92均為置晶膜(Die Attach Film,簡稱DAF)態樣,但無特別限制。
如圖2B所示,接續圖2A所示之製程,形成一包覆層25於該承載件20上,以包覆該第一電子元件21與虛晶片28。
於本實施例中,該包覆層25係具有相對之第一表面25a與第二表面25b,且該包覆層25以其第二表面25b結合至該承載件20之離形層200上。例如,該包覆層25係為絕緣材,如環氧樹脂之封裝膠體,其可用壓合(lamination)或模壓(molding)之方式形成於該承載件20上。
再者,藉由整平製程,如研磨方式,移除該包覆層25之第一表面25a之部分材質,使該包覆層25之第一表面25a齊平該導電體211之端面與該虛晶片28之表面28a,令該導電體211與該虛晶片28外露於該包覆層25。
應可理解地,若接續圖2A-1所示之製程,該包覆層25將包覆該絕緣層212,且該包覆層25之第一表面25a復可齊平該絕緣層212之上表面,令該絕緣層212亦外露於該包覆層25。
如圖2C所示,形成一線路結構26於該包覆層25之第一表面25a上,以令該線路結構26電性連接該導電體211,且該線路結構26並未訊號傳輸至該虛晶片28,因而無需電性連接該虛晶片28。
於本實施例中,該線路結構26係包括複數介電層260、及設於該介電層260上並電性連接該些導電體211之複數線路層261,如線路重佈層(Redistribution layer,簡稱RDL)規格。例如,形成該線路層261之材質係為銅,且形成該介電層260之材質係為如聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)或其它介電材。
再者,該線路結構26於最外層之線路層261上可具有外露於該介電層260之複數電性接觸墊262,以結合如銅柱或錫球之導電元件27,俾供後續接置如封裝結構、電路板或晶片等電子裝置(圖略)。
因此,本發明之製法係藉由該虛晶片28之配置,以抑制該包覆層25與該第一電子元件21之間因熱膨脹係數(Coefficient of thermal expansion,簡稱CTE)不匹配(mismatch)所造成的翹曲,亦即該包覆層25內之應力可分散至該虛晶片28,以改善該包覆層25之翹曲程度,且可針對翹曲嚴重處(如圖2A-2所示之承載件20之圓形版面之邊緣處)配置該虛晶片28,以最佳化翹曲數值,故相較於習知技術,本發明之製法可防止大型整版面之承載件20或該包覆層25發生翹曲。
例如,當該承載件20之尺寸越大時,由於配置有該虛晶片28,該包覆層25之翹曲程度不會隨之加大,故於製作該線路結構26時,該線路層261與該第一電子元件21之導電體211之間的電性連接能有效對接,因而能避免良率過低及產品可靠度不佳等問題,以降低成本及提高產能。
再者,於配置該虛晶片28之情況下,若縮減該包覆層25之體積占比,亦可進一步降低因該包覆層25與該第一電子元件21之間的CTE不匹配所造成的翹曲程度,以提升防翹曲之效能,故於設置該第一電子元件21與虛晶片28時,將該虛晶片28使用較多結合材結合於該承載件20上,使該第二結合層92之厚度t2大於該第一結合層91之厚度t1(即該第二結合層92之用量多於該第一結合層91之用量),即可減少該包覆層25之用量,以達到縮減該包覆層25之體積占比之目的。換言之,若如習知使用厚度一致的DAF,則無法縮減該包覆層25之體積占比。
因此,藉由調整該第一結合層91或第二結合層92之用量,使該虛晶片28與該第二結合層92之總厚度D2不小於(等於或大於)該第一電子元件21與該第一結合層91之總厚度D1(即該第二結合層92之厚度t2需大於該第一結合層91之厚度t1),即可依需求調整該包覆層25之用量。
如圖2D所示,移除該承載件20及其上之離形層200,以外露該介電保護層201,以獲取一電子封裝件2。
於本實施例中,於後續製程中可依需求進行整平製程,如圖2E所示,以研磨方式移除該介電保護層201及該第一結合層91與第二結合層92,令該第一電子元件21之非作用面21b與該虛晶片28之表面齊平該包覆層25之第二表面25b,使該第一電子元件21之非作用面21b與該虛晶片28之表面外露於該包覆層25之第二表面25b,故可獲取厚度更薄之電子封裝件2a。
應可理解地,若接續圖2A-1所示之製程,將獲取如圖2E-1所示之在第一電子元件21上佈有該絕緣層212之電子封裝件2b。
因此,本發明之製法藉由該虛晶片28與該第二結合層92之總厚度D2不小於(等於或大於)該第一電子元件21與該第一結合層91之總厚度D1,以於該包覆層25進行整平製程時,研磨作業研磨至該虛晶片28處會研磨到矽材質之該虛晶片28,而使表面粗糙度較佳的矽材質之表面28a外露,進而使後續堆疊於該虛晶片28之表面28a之上的該線路結構26之RDL製程的介電層260(如PI材)之塗佈狀況較佳,因而能有效提高產品信賴性。
換言之,若該虛晶片28與該第二結合層92之總厚度小於該第一電子元件21與該第一結合層91之總厚度D1(例如,該第一結合層91之厚度t1等於該第二結合層92之厚度t2),即該虛晶片28之表面28a內埋於該包覆層25之第一表面25a內而不會外露於該包覆層25,故於該包覆層25之第一表面25a進行整平製程時,研磨作業研磨至該虛晶片28處,僅會研磨該包覆層25之絕緣材,而該包覆層25因內部含有大顆粒的填充物(filler)而使該些填充物滾動於該包覆層25與研磨器具之間,導致該包覆層25於研磨後容易於該虛晶片28處的第一表面25a形成凹凸表面,即較差的表面粗糙度,致使後續該線路結構26之RDL製程的介電層260(如PI材)之塗佈狀況不佳,進而影響產品之信賴性。
圖3A至圖3H係為本發明之電子封裝件3之第二實施例之製法之剖視示意圖。本實施例與第一實施例之差異在於圖2C之後續製程,故以下不再贅述相同處。
如圖3A至圖3C所示,係如圖2A至圖2C所示之製程,將第一電子元件21藉由第一結合層91設於承載件20上,且將虛晶片(dummy die)28藉由第二結合層92設於承載件20上,並形成包覆層25於該承載件20上,以包覆該第一電子元件21與虛晶片28,接著形成線路結構26
於該包覆層25之第一表面25a上,該線路結構26於最外層設有複數電性接觸墊262。
如圖3D所示,於該線路結構26上形成複數電性連接該電性接觸墊262之導電柱23,且於該線路結構26上設置至少一(如三個)電性連接該線路層261之第二電子元件22,32。
於本實施例中,形成該導電柱23之材質係為如銅之金屬材或銲錫材,且該導電柱23係以電鍍或其它方式接觸立設於該電性接觸墊262上。
所述之第二電子元件22,32係包含半導體基材,如被動元件、橋接晶片或其它元件。
於本實施例中,若該第二電子元件22為被動元件,其藉由複數導電凸塊220設於該電性接觸墊262上並電性連接該線路層261。
再者,該第二電子元件32為橋接晶片,其藉由該導電凸塊321設於該電性接觸墊262上並電性連接該線路層261,其中,該導電凸塊321可包含如銅柱之金屬柱或銲錫材料。
因此,依據電路配置需求,該第二電子元件32藉由該線路層261電性橋接該第一電子元件21與另一電性連接該線路結構26之電子元件(圖未示)。
應可理解地,若該第二電子元件22為半導體晶片,其採用覆晶方式藉由複數導電凸塊220設於該電性接觸墊262上並電性連接該線路層261,且以底膠(圖略)包覆該導電凸塊220;或者,該第二電子元件22亦可藉由複數銲線(圖略)以打線方式電性連接該電性接觸墊262。然而,有關該第二電子元件22電性連接該線路層261之方式不限於上述。
如圖3E所示,形成一封裝層24於該線路結構26上,以令該封裝層24包覆該第二電子元件22,32與該些導電柱23。
於本實施例中,該封裝層24係為絕緣材,如聚醯亞胺(polyimide,簡稱PI)、乾膜(dry film)、如環氧樹脂(epoxy)之封裝膠體或封裝材(molding compound)。例如,該封裝層24之製程可選擇液態封膠(liquid compound)、噴塗(injection)、壓合(lamination)或模壓(compression molding)等方式形成於該線路結構26上。應可理解地,該封裝層24與該包覆層25之材質可相同或相異。
再者,可藉由整平製程,使該封裝層24之表面24a齊平該導電柱23之端面23a與該電子元件22,32之上表面,以令該導電柱23之端面23a與該電子元件22,32外露於該封裝層24之表面24a。例如,該整平製程係藉由研磨方式,移除該導電柱23之部分材質與該封裝層24之部分材質。
如圖3F所示,形成一佈線結構30於該封裝層24之表面24a上,且令該佈線結構30電性連接該複數導電柱23與該第二電子元件32。
於本實施例中,該佈線結構30係包括介電層300及設於該介電層300上之線路重佈層(redistribution layer,簡稱RDL)301,其中,最外層之介電層300可作為防銲層,且令最外層之線路重佈層301外露於該防銲層,以作為電性接觸墊302,供結合複數如銲球之導電元件29。
再者,形成該線路重佈層301之材質係為銅,且形成該介電層300之材質係為如聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)等之介電材、或如綠漆、油墨等之防銲材。
如圖3G所示,移除該承載件20及其上之離形層200,以外露該介電保護層201,以獲取一電子封裝件3。
於本實施例中,於後續製程中可依需求進行整平製程,如圖3H所示,以研磨方式移除該介電保護層201及該第一結合層91與第二結合層92,令該第一電子元件21之非作用面21b與該虛晶片28之表面28b齊平該包覆層25之第二表面25b,使該第一電子元件21之非作用面21b與該虛晶片28之表面28b外露於該包覆層25之第二表面25b,故可獲取厚度更薄之電子封裝件3a。
應可理解地,若接續圖2A-1所示之製程,將可獲取在第一電子元件21上佈有絕緣層212之電子封裝件。
因此,同理可知,第二實施例之製法亦藉由該虛晶片28之配置,以抑制該包覆層25與該第一電子元件21之間因CTE不匹配所造成的翹曲,故相較於習知技術,本發明之製法可防止大型整版面之承載件20或該包覆層25發生翹曲。
再者,藉由該第二結合層92之厚度大於該第一結合層91之厚度,以減少該包覆層25之用量而縮減該包覆層25之體積占比,因而能進一步提升防翹曲之效能。
又,藉由該虛晶片28與該第二結合層92之總厚度不小於(等於或大於)該第一電子元件21與該第一結合層91之總厚度,以於該包覆層25經整平製程後,研磨作業研磨至該虛晶片28處會研磨到矽材質之該虛晶片28,而使表面粗糙度較佳的矽材質之表面28a外露,進而使後續堆疊於該虛晶片28之表面28a之上的該線路結構26之RDL製程的介電層260(如PI材)之塗佈狀況較佳,因而能有效提高產品信賴性。
另外,於本發明之第一實施例或第二實施例之後續製程中,可藉由該導電元件27,29接置於一封裝基板40上,如圖4所示。例如,該封裝基板40上側可設置該電子封裝件2,2a,2b,3,3a,且該封裝基板40下側可配置複數銲球42,供結合如電路板之電子裝置(圖略)。
本發明復提供一種電子封裝件2,2a,2b,3,3a,係包括:一包覆層25、至少一第一電子元件21、一第一結合層91、至少一虛晶片28、一第二結合層92以及一線路結構26。
所述之包覆層25係具有相對之第一表面25a與第二表面25b。
所述之第一電子元件21係嵌埋於該包覆層25中,其中,該第一電子元件21係具有相對之作用面21a與非作用面21b,該作用面21a上具有複數導電體211,以令該複數導電體211之端面齊平該包覆層25之第一表面25a。
所述之第一結合層91係嵌埋於該包覆層25中並結合於該非作用面21b上,以令該第一結合層91齊平該包覆層25之第二表面25b。
所述之虛晶片28係以間隔該第一電子元件21之方式嵌埋於該包覆層25中,以令該虛晶片28之表面28a齊平該包覆層25之第一表面25a。
所述之第二結合層92係嵌埋於該包覆層25中並結合於該虛晶片28上,以令該第二結合層92齊平該包覆層25之第二表面25b,其中,該第一結合層91之厚度t1係小於該第二結合層92之厚度t2。
所述之線路結構26係設於該包覆層25之第一表面25a上以電性連接該第一電子元件21而未電性連接該虛晶片28。
於一實施例中,該包覆層25之第二表面25b上係結合一介電保護層201,以令該介電保護層201接觸該第一結合層91與該第二結合層92。
於一實施例中,該虛晶片28與該第二結合層92之總厚度D2係等於該第一電子元件21與該第一結合層91之總厚度D1。
於一實施例中,所述之電子封裝件3,3a復包括至少一設於該線路結構26上並電性連接該線路結構26之第二電子元件22,32。例如,該第二電子元件22,32係為橋接元件,以藉由該線路結構26電性橋接該第一電子元件21與另一電性連接該線路結構26之電子元件。
進一步,所述之電子封裝件3,3a復包括至少一設於該線路結構26上並電性連接該線路結構26之導電柱23。又包括一包覆該導電柱23與該第二電子元件22,32之封裝層24,以令該導電柱23之端面23a齊平於該封裝層24之表面24a。另可包括形成於該封裝層24上且電性連接該導電柱23之佈線結構30,以形成複數導電元件29於該佈線結構30上。
於一實施例中,所述之電子封裝件2,2a,2b復包括形成於該線路結構26上並電性連接該線路結構26之複數導電元件27。
綜上所述,本發明之電子封裝件及其製法,係藉由該虛晶片之配置,以抑制該包覆層與該第一電子元件之間因CTE不匹配所造成的翹曲,故本發明能防止大型整版面之承載件或該包覆層發生翹曲。
再者,藉由該第二結合層之厚度大於該第一結合層之厚度,以減少該包覆層之用量而縮減該包覆層之體積占比,因而能進一步提升防翹曲之效能。
又,藉由該虛晶片與該第二結合層之總厚度不小於(等於或大於)該第一電子元件與該第一結合層之總厚度,以於該包覆層經整平製程後,研磨作業研磨至該虛晶片處會研磨到矽材質之該虛晶片,而使表面粗糙度較佳的矽材質之表面外露,進而使後續堆疊於該虛晶片之表面之上的該線路結構之RDL製程的介電層(如PI材)之塗佈狀況較佳,因而能有效提高產品信賴性。
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。
2:電子封裝件
201:介電保護層
21:第一電子元件
211:導電體
25:包覆層
26:線路結構
27:導電元件
28:虛晶片
91:第一結合層
92:第二結合層
Claims (18)
- 一種電子封裝件,係包括:包覆層,係具有相對之第一表面與第二表面;第一電子元件,係嵌埋於該包覆層中,其中,該第一電子元件係具有相對之作用面與非作用面,該作用面上具有複數表面齊平該包覆層之第一表面的導電體;第一結合層,係嵌埋於該包覆層中並結合於該非作用面上,以令該第一結合層之外表面齊平該包覆層之第二表面;虛晶片,係以間隔該第一電子元件之方式嵌埋於該包覆層中,以令該虛晶片之一矽材質表面齊平該包覆層之第一表面;第二結合層,係嵌埋於該包覆層中並結合於該虛晶片上,以令該第二結合層之外表面齊平該包覆層之第二表面,其中,該第一結合層之厚度係小於該第二結合層之厚度;以及線路結構,係設於該包覆層之第一表面上以電性連接該第一電子元件。
- 如請求項1所述之電子封裝件,其中,該包覆層之第二表面上係結合一介電保護層,以令該介電保護層接觸該第一結合層與該第二結合層。
- 如請求項1所述之電子封裝件,復包括設於該線路結構上並電性連接該線路結構之第二電子元件。
- 如請求項3所述之電子封裝件,其中,該第二電子元件係為橋接元件,以藉由該線路結構電性橋接該第一電子元件與另一電性連接該線路結構之電子元件。
- 如請求項3所述之電子封裝件,復包括設於該線路結構上並電性連接該線路結構之導電柱。
- 如請求項5所述之電子封裝件,復包括包覆該導電柱與該第二電子元件之封裝層,且令該導電柱之端面齊平於該封裝層之表面。
- 如請求項6所述之電子封裝件,復包括形成於該封裝層上之佈線結構,其電性連接該導電柱。
- 如請求項7所述之電子封裝件,復包括形成於該佈線結構上之複數導電元件。
- 如請求項1所述之電子封裝件,復包括形成於該線路結構上之複數導電元件。
- 一種電子封裝件之製法,係包括:將第一電子元件藉由第一結合層設於一承載件上,且將虛晶片藉由第二結合層設於該承載件上,以令該第一電子元件與該虛晶片係相互間隔排設,其中,該第一電子元件係具有相對之作用面與非作用面,該作用面上具有複數導電體,且該第一電子元件以其非作用面結合該第一結合層,以令該第一結合層之厚度小於該第二結合層之厚度,且該第一電子元件相對該承載件之高度係等於或小於該虛晶片相對該承載件之高度;形成包覆層於該承載件上,以令該包覆層包覆該第一電子元件與該虛晶片,其中,該包覆層係具有相對之第一表面與第二表面,且該包覆層以其第二表面結合至該承載件上,並使該複數導電體之端面與該虛晶片之一矽材質表面齊平該包覆層之第一表面; 形成線路結構於該包覆層之第一表面上,以令該線路結構電性連接該第一電子元件之導電體而未電性連接該虛晶片;以及移除該承載件,以令該第一結合層與該第二結合層之外表面齊平該包覆層之第二表面。
- 如請求項10所述之電子封裝件之製法,其中,該承載件係藉由介電保護層接觸結合該包覆層之第二表面、該第一結合層與該第二結合層。
- 如請求項10所述之電子封裝件之製法,復包括將第二電子元件設於該線路結構上並電性連接該線路結構。
- 如請求項12所述之電子封裝件之製法,其中,該第二電子元件係為橋接元件,以藉由該線路結構電性橋接該第一電子元件與另一電性連接該線路結構之電子元件。
- 如請求項12所述之電子封裝件之製法,復包括形成導電柱於該線路結構上,並使該導電柱電性連接該線路結構。
- 如請求項14所述之電子封裝件之製法,復包括以封裝層包覆該導電柱與該第二電子元件,以令該導電柱外露於該封裝層。
- 如請求項15所述之電子封裝件之製法,復包括形成佈線結構於該封裝層上,且該佈線結構係電性連接該導電柱。
- 如請求項16所述之電子封裝件之製法,復包括形成複數導電元件於該佈線結構上。
- 如請求項10所述之電子封裝件之製法,復包括形成複數導電元件於該線路結構上。
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CN202211467906.5A CN118073292A (zh) | 2022-11-11 | 2022-11-22 | 电子封装件及其制法 |
US18/190,344 US20240162101A1 (en) | 2022-11-11 | 2023-03-27 | Electronic package and manufacturing method thereof |
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TWI718314B (zh) * | 2016-11-29 | 2021-02-11 | 台灣積體電路製造股份有限公司 | 具有虛設晶粒的封裝結構、半導體裝置及其形成方法 |
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TWI718314B (zh) * | 2016-11-29 | 2021-02-11 | 台灣積體電路製造股份有限公司 | 具有虛設晶粒的封裝結構、半導體裝置及其形成方法 |
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