TWI802190B - A manufacturing method of a light emitting apparatus - Google Patents
A manufacturing method of a light emitting apparatus Download PDFInfo
- Publication number
- TWI802190B TWI802190B TW110149430A TW110149430A TWI802190B TW I802190 B TWI802190 B TW I802190B TW 110149430 A TW110149430 A TW 110149430A TW 110149430 A TW110149430 A TW 110149430A TW I802190 B TWI802190 B TW I802190B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- adhesive material
- absorbing adhesive
- emitting element
- absorbing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000853 adhesive Substances 0.000 claims abstract description 126
- 230000001070 adhesive effect Effects 0.000 claims abstract description 126
- 238000000034 method Methods 0.000 claims abstract description 46
- 238000003825 pressing Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 114
- 239000000758 substrate Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 15
- 239000003292 glue Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000031700 light absorption Effects 0.000 abstract 5
- 238000001179 sorption measurement Methods 0.000 abstract 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 18
- 241000519995 Stachys sylvatica Species 0.000 description 6
- 238000003475 lamination Methods 0.000 description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 6
- 239000004926 polymethyl methacrylate Substances 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 5
- 239000011358 absorbing material Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
本發明是有關於一種發光裝置的製造方法。The invention relates to a manufacturing method of a light emitting device.
發光二極體顯示裝置具有多個發光二極體(light emitting diode;LED),發光二極體具有高解析度、省電、壽命長的優點,在目前微型發光二極體顯示裝置的製作過程中,需透過巨量轉移將大量的發光二極體轉置至另一基板上,並進行封裝。為了提高顯示裝置的良率,封裝後會進行檢測來移除失效的微型發光二極體,再進行封裝,然而,若使用點膠的方式封裝,會造成平整度差的缺點,並且,若使用的是透明膠,還會造成顯示畫面出現白點。The light emitting diode display device has a plurality of light emitting diodes (light emitting diodes; LEDs), and the light emitting diodes have the advantages of high resolution, power saving, and long life. In this process, a large number of light-emitting diodes need to be transferred to another substrate through mass transfer and packaged. In order to improve the yield rate of the display device, inspection will be carried out after packaging to remove the failed miniature light-emitting diodes before packaging. What is more is transparent glue, it will also cause white spots to appear on the display screen.
本發明提供一種發光裝置的製造方法,其具有平整度佳且可避免顯示畫面有白點。The invention provides a method for manufacturing a light-emitting device, which has good flatness and can avoid white spots on a display screen.
本發明一實施例的發光裝置的製造方法包括以下步驟。於電路基板上放置多個發光元件。形成第一吸光膠材於各發光元件之間,發光元件包括第一發光元件,第一吸光膠材具有第一部分圍繞第一發光元件。執行蝕刻製程,以移除第一吸光膠材的第一部分。以第二發光元件取代第一發光元件。將第二吸光膠材壓向第一吸光膠材,使至少部分的第二吸光膠材圍繞第二發光元件且覆蓋發光元件的兩側。A method for manufacturing a light emitting device according to an embodiment of the present invention includes the following steps. A plurality of light-emitting elements are placed on the circuit substrate. A first light-absorbing adhesive material is formed between each light-emitting element, the light-emitting element includes a first light-emitting element, and the first light-absorbing adhesive material has a first portion surrounding the first light-emitting element. An etching process is performed to remove the first portion of the first light-absorbing adhesive. The first light emitting element is replaced by the second light emitting element. The second light-absorbing adhesive material is pressed against the first light-absorbing adhesive material, so that at least part of the second light-absorbing adhesive material surrounds the second light-emitting element and covers both sides of the light-emitting element.
基於上述,利用執行蝕刻製程,以移除第一吸光膠材的第一部分,將第二吸光膠材壓向第一吸光膠材,使至少部分的第二吸光膠材圍繞第二發光元件且覆蓋發光元件的兩側,可使發光裝置的平整度佳,且由於第一吸光膠材及第二吸光膠材皆為吸光材質,可避免顯示畫面有白點。Based on the above, by performing an etching process to remove the first part of the first light-absorbing adhesive material, press the second light-absorbing adhesive material against the first light-absorbing adhesive material, so that at least part of the second light-absorbing adhesive material surrounds and covers the second light-emitting element The two sides of the light-emitting element can make the flatness of the light-emitting device better, and since the first light-absorbing adhesive material and the second light-absorbing adhesive material are both light-absorbing materials, white spots on the display screen can be avoided.
第1圖至第8圖是依照本發明一實施例的發光裝置10的製造方法。請先參照第1圖,於電路基板100上放置多個發光元件102,形成第一吸光膠材104於各發光元件102之間。電路基板100例如可具有多個接墊(未示),發光元件102以覆晶的方式接合於電路基板100。發光元件102可顯示出不同顏色,例如可為紅色、綠色及藍色。1 to 8 are the manufacturing method of the
於本實施例中,在單層膠(例如:第一吸光膠材104)封裝下對發光元件102進行檢測,以確認每一發光元件102具有預期的發光狀態,並對損壞的發光元件102進行修復。舉例來說,發光元件102包括第一發光元件102A,第一吸光膠材104具有第一部分104A圍繞第一發光元件102A。在一實施例中,對第一發光元件102A進行測試後,若認為其不具有預期的發光狀態,則如第2圖所示,執行蝕刻製程1000以移除第一吸光膠材104的第一部分104A。於本實施例中,蝕刻製程1000為電漿製程。舉例來說,蝕刻製程1000是大氣常壓式(Atmospheric Pressure;AP)電漿製程,並利用遮罩MK的開口露出第一發光元件102A,且遮住其餘發光元件102。In this embodiment, the light-emitting
於一實施例中,移除第一吸光膠材104的第一部分104A的步驟使得第一吸光膠材104具有暴露電路基板100的開口OP(如第3圖所示),藉此,可使第一發光元件102A容易被取出。In one embodiment, the step of removing the
接著參照第4圖,以第二發光元件102B取代第一發光元件102A,第二發光元件102B顯示的顏色與第一發光元件102A顯示的顏色相同。將第二吸光膠材106壓向第一吸光膠材104,使至少部分的第二吸光膠材106圍繞第二發光元件102B且覆蓋發光元件102的兩側(如第5圖所示)。舉例而言,於一實施例中,可將電路基板100置於模具112上,以層壓1002的方式將第二吸光膠材106壓向第一吸光膠材104。如此,可使發光裝置10的平整度佳,例如頂面平整度佳,且由於第一吸光膠材104及第二吸光膠材106皆為吸光材質,可避免顯示畫面有白點。Next, referring to FIG. 4 , the first light-
接著,請參照第5圖,於一實施例中,第二吸光膠材106壓向第一吸光膠材104的步驟使得第二吸光膠材106填滿開口OP。舉例來說,第二吸光膠材106更覆蓋第一吸光膠材104,為了清楚說明,第5圖中繪示了虛線L,第二吸光膠材106位於虛線L之上,第一吸光膠材104位於虛線L之下。Next, please refer to FIG. 5 , in one embodiment, the step of pressing the second light-absorbing
於一實施例中,第二吸光膠材106固化後的光學係數與第一吸光膠材104固化後的光學係數相同。此處指的光學係數例如是光密度(optical density;OD)及/或吸光率。於一實施例中,第二吸光膠材106的材料與第一吸光膠材104的材料相同。In one embodiment, the cured optical coefficient of the second light-absorbing
請參照第6圖,移除第二吸光膠材106的頂部,以露出發光元件102及第二發光元件102B。於一實施例中,移除第二吸光膠材106的頂部是採用電漿製程1004。Referring to FIG. 6 , the top of the second light-absorbing
接著請參照第7圖,在移除第二吸光膠材106的頂部後,形成第二透光膠材108於第一吸光膠材104、第二吸光膠材106、發光元件102及第二發光元件102B上。第二透光膠材108覆蓋發光元件102及第二發光元件102B。第二透光膠材108的材料例如是光阻材料、環氧樹脂(epoxy resin)、矽樹脂、聚甲基丙烯酸甲酯(polymethyl methacrylate;PMMA)或其他適宜的可透光材料,而可使發光元件102及第二發光元件102B所發出的光可以透射出去。於一實施例中,第二透光膠材108可利用層壓方式所形成。Next, please refer to FIG. 7, after removing the top of the second light-absorbing
第8圖至第15圖是依照本發明另一實施例的發光裝置10a的製造方法。請先參照第8圖,於一些實施例中,發光裝置10a是在多層膠封裝後進行修復。舉例來說,於電路基板100上放置多個發光元件102,形成第一吸光膠材104於各發光元件102之間,發光元件102包括第一發光元件102A,第一吸光膠材104具有第一部分104A圍繞第一發光元件102A,接著形成第一透光膠材110於第一吸光膠材104上。在本實施例中,在多層膠(例如:第一吸光膠材104、第一透光膠材110)封裝下對發光元件102進行檢測。第一透光膠材110的材料例如是光阻材料、環氧樹脂(epoxy resin)、矽樹脂、聚甲基丙烯酸甲酯(polymethyl methacrylate;PMMA)或其他適宜的可透光材料,而可使發光元件102及第一發光元件102A所發出的光可以透射出去。8 to 15 are the manufacturing method of the
請參照第9圖,以雷射製程1006移除至少部分的第一透光膠材110,雷射製程1006所使用的雷射光例如是UV雷射光。接著請參照第10圖,執行蝕刻製程1008以移除第一吸光膠材104的第一部分104A。也就是說,於本實施例中,是在執行蝕刻製程1008前,形成第一透光膠材110於第一吸光膠材104上(見第8圖),並以雷射製程1006移除至少部分的第一透光膠材110(見第9圖)。於一實施例中,在雷射製程1006之後,第一透光膠材110具有凹部110R,凹部110R位於第一發光元件102A的頂部。由於執行雷射製程1006的過程中,電路基板100仍被第一吸光膠材104所覆蓋,因此,電路基板100可受到第一吸光膠材104的保護,而免於被雷射製程1006的雷射光所損傷,可維持電路基板100的電性,使其可靠度佳。於一實施例中,蝕刻製程1008為電漿製程。於本實施例中,蝕刻製程1008還包括移除第一透光膠材110的底部。Referring to FIG. 9 , at least a portion of the first light-transmitting
於一實施例中,移除第一吸光膠材104的第一部分104A的步驟使得第一吸光膠材104具有暴露電路基板100的開口OP,藉此,可使第一發光元件102A容易被取出。In one embodiment, the step of removing the
接著,請參照第11圖,以第二發光元件102B取代第一發光元件102A,第二發光元件102B顯示的顏色與第一發光元件102A顯示的顏色相同。Next, please refer to FIG. 11 , the first light-
請一併參照第12圖及第13圖,將第二吸光膠材106壓向第一吸光膠材104,使至少部分的第二吸光膠材106圍繞第二發光元件102B且覆蓋發光元件102的兩側(見第13圖) ,為了清楚說明,第13圖中繪示了虛線L,第二吸光膠材106位於虛線L之上,第一吸光膠材104位於虛線L之下。於一實施例中,可將電路基板100置於模具112上(見第12圖),以層壓1002的方式將第二吸光膠材106壓向第一吸光膠材104。如此,可使發光裝置10a的平整度佳,例如頂面平整度佳,且由於第一吸光膠材104及第二吸光膠材106皆為吸光材質,可避免顯示畫面有白點。Please refer to FIG. 12 and FIG. 13 together, press the second light-absorbing
於一實施例中,第二吸光膠材106壓向第一吸光膠材104的步驟使得第二吸光膠材106填滿開口OP。舉例來說,第二吸光膠材106更覆蓋第一吸光膠材104。In one embodiment, the step of pressing the second light-absorbing
請參照第14圖,移除第二吸光膠材106的頂部,以露出發光元件102及第二發光元件102B。於一實施例中,移除第二吸光膠材106的頂部是採用電漿製程1004。Referring to FIG. 14 , the top of the second light-absorbing
接著請參照第15圖,在移除第二吸光膠材106的頂部後,形成第二透光膠材108於第一吸光膠材104、第二吸光膠材106、發光元件102及第二發光元件102B上。第二透光膠材108覆蓋發光元件102及第二發光元件102B。於一實施例中,第二透光膠材108可利用層壓方式所形成。Next, please refer to FIG. 15, after removing the top of the second light-absorbing
綜上所述,本實施例的發光裝置利用執行蝕刻製程,以移除第一吸光膠材的第一部分,將第二吸光膠材壓向第一吸光膠材,使至少部分的第二吸光膠材圍繞第二發光元件且覆蓋發光元件的兩側,可使發光裝置的平整度佳,且由於第一吸光膠材及第二吸光膠材皆為吸光材質,可避免顯示畫面有白點。In summary, the light-emitting device of this embodiment utilizes an etching process to remove the first part of the first light-absorbing adhesive, and press the second light-absorbing adhesive against the first light-absorbing adhesive, so that at least part of the second light-absorbing adhesive The material surrounds the second light-emitting element and covers both sides of the light-emitting element, so that the flatness of the light-emitting device can be improved, and since the first light-absorbing adhesive material and the second light-absorbing adhesive material are both light-absorbing materials, white spots on the display screen can be avoided.
10、10a:發光裝置
100:電路基板
102:發光元件
102A:第一發光元件
102B:第二發光元件
104:第一吸光膠材
104A:第一部分
106:第二吸光膠材
108:第二透光膠材
110:第一透光膠材
110R:凹部
112:模具
1000:蝕刻製程
1002:層壓
1004:電漿製程
1006:雷射製程
1008:蝕刻製程
L:虛線
MK:遮罩
OP:開口
10, 10a: light emitting device
100: circuit substrate
102:
閱讀以下詳細敘述並搭配對應之圖式,可了解本揭露之多個樣態。需留意的是,圖式中的多個特徵並未依照該業界領域之標準作法繪製實際比例。事實上,所述之特徵的尺寸可以任意的增加或減少以利於討論的清晰性。 第1圖至第8圖是依照本發明一實施例的發光裝置的製造方法。 第9圖至第15圖是依照本發明另一實施例的發光裝置的製造方法。 Read the following detailed description and match the corresponding diagrams to understand the multiple aspects of this disclosure. It should be noted that many features in the drawings are not drawn to scale in accordance with standard practice in this industry. In fact, the dimensions of the described features may be arbitrarily increased or decreased for clarity of discussion. FIG. 1 to FIG. 8 are a manufacturing method of a light emitting device according to an embodiment of the present invention. 9 to 15 are the manufacturing method of the light emitting device according to another embodiment of the present invention.
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none
10:發光裝置 10: Lighting device
100:電路基板 100: circuit substrate
102:發光元件 102: Light emitting element
102B:第二發光元件 102B: the second light emitting element
104:第一吸光膠材 104: The first light-absorbing adhesive
106:第二吸光膠材 106: The second light-absorbing adhesive material
112:模具 112: Mold
1002:層壓 1002: lamination
OP:開口 OP: opening
Claims (10)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW110149430A TWI802190B (en) | 2021-12-29 | 2021-12-29 | A manufacturing method of a light emitting apparatus |
CN202210505797.5A CN114975695A (en) | 2021-12-29 | 2022-05-10 | Method for manufacturing light-emitting device |
KR1020220151489A KR20230101696A (en) | 2021-12-29 | 2022-11-14 | A manufacturing method of a light emitting apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW110149430A TWI802190B (en) | 2021-12-29 | 2021-12-29 | A manufacturing method of a light emitting apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI802190B true TWI802190B (en) | 2023-05-11 |
TW202327146A TW202327146A (en) | 2023-07-01 |
Family
ID=82982152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110149430A TWI802190B (en) | 2021-12-29 | 2021-12-29 | A manufacturing method of a light emitting apparatus |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR20230101696A (en) |
CN (1) | CN114975695A (en) |
TW (1) | TWI802190B (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW202119669A (en) * | 2019-11-05 | 2021-05-16 | 友達光電股份有限公司 | Display panel and method of manufacturing the same |
CN113054070A (en) * | 2019-12-26 | 2021-06-29 | 深圳市洲明科技股份有限公司 | Integrated packaging display module, repairing method thereof and display device |
US11127889B2 (en) * | 2019-10-30 | 2021-09-21 | X Display Company Technology Limited | Displays with unpatterned layers of light-absorbing material |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210027848A (en) * | 2019-09-03 | 2021-03-11 | 삼성전자주식회사 | Micro led display and manufacturing method thereof |
US20210366881A1 (en) * | 2019-11-05 | 2021-11-25 | Beijing Boe Optoelectronics Technology Co., Ltd. | Array substrate, method of manufacturing the same, and display device |
CN110854108B (en) * | 2019-11-06 | 2021-08-27 | 安晟技术(广东)有限公司 | Flip LED chip CSP manufacturing method |
JP7492328B2 (en) * | 2019-11-18 | 2024-05-29 | シャープ福山レーザー株式会社 | Image display element and method for manufacturing the image display element |
-
2021
- 2021-12-29 TW TW110149430A patent/TWI802190B/en active
-
2022
- 2022-05-10 CN CN202210505797.5A patent/CN114975695A/en active Pending
- 2022-11-14 KR KR1020220151489A patent/KR20230101696A/en not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11127889B2 (en) * | 2019-10-30 | 2021-09-21 | X Display Company Technology Limited | Displays with unpatterned layers of light-absorbing material |
TW202119669A (en) * | 2019-11-05 | 2021-05-16 | 友達光電股份有限公司 | Display panel and method of manufacturing the same |
CN113054070A (en) * | 2019-12-26 | 2021-06-29 | 深圳市洲明科技股份有限公司 | Integrated packaging display module, repairing method thereof and display device |
Also Published As
Publication number | Publication date |
---|---|
CN114975695A (en) | 2022-08-30 |
TW202327146A (en) | 2023-07-01 |
KR20230101696A (en) | 2023-07-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI648871B (en) | Method of manufacturing a light-emitting module | |
US9490398B2 (en) | Manufacturing method of light emitting device in a flip-chip configuration with reduced package size | |
JP5678629B2 (en) | Method for manufacturing light emitting device | |
US6881980B1 (en) | Package structure of light emitting diode | |
US20090224265A1 (en) | LED chip package structure with a high-efficiency heat-dissipating substrate and method for making the same | |
JP5843859B2 (en) | Manufacturing method of semiconductor light emitting device | |
WO2019082759A1 (en) | Inspection method for led chip, inspection device for same and method for manufacturing led display | |
KR20120061376A (en) | Method of applying phosphor on semiconductor light emitting device | |
TW201515279A (en) | Light-emitting diode assembly and manufacturing method thereof | |
US10276547B2 (en) | Image display module and method of manufacturing the same, and display device | |
JP2008130777A (en) | Semiconductor light-emitting device | |
US8455275B2 (en) | Method for making light emitting diode package | |
JP2015207743A (en) | Led light-emitting device and method of manufacturing the same | |
US10026757B1 (en) | Micro-light emitting display device | |
TWI802190B (en) | A manufacturing method of a light emitting apparatus | |
US10141290B2 (en) | Display device and method for manufacturing the same | |
KR101984897B1 (en) | Light emitting diode package and manufacturing method thereof | |
KR101794918B1 (en) | Manufacturing method for reflection layer of substrate of flip chip type light emitting diode | |
US20080009086A1 (en) | Method of packaging light emitting diodes | |
TWI467808B (en) | Light emitting device, method of manufacturing the same and light emitting apparatus | |
TWI843449B (en) | Display module, fabrication method and repair method thereof | |
TWI722835B (en) | Light emitting diode package structure and manufacturing method thereof | |
TWI414089B (en) | Method of packaging light emitting diode | |
JP2011192672A (en) | Light emitting device | |
JP2010171430A (en) | Light emitting diode package structure and method thereof |