TWI722615B - Ultraviolet light source apparatus of high-uniformity diode array - Google Patents

Abstract

An apparatus of ultraviolet (UV) light source is provided. The apparatus uses high-uniformity diode array. A set of collimated illumination lenses is used. A light source of UVLED array passes through the lens set to uniformly distribute the light source and obtain a collimated light. The present invention comprises a light source of UVLED array; a collimated-illumination lens set; and a base substrate. The construction is simple. The present invention can be applied in the lithography of a semiconductor. The lithography may have contact lines of widths smaller than or equal to 3 microns; soft-contact lines of widths of 3~30 microns; and short-spaced lines of widths of 30~200 microns. The present invention avoids the mask from contact wear-out for multiple uses, and further reduces the replacement rate.

Description

High uniformity array diode ultraviolet light source device

The present invention relates to a high-uniformity array diode ultraviolet light source device, especially And a kind of use of a set of collimated illumination lens group, especially refers to the UVLED array light source through the lens group, can make the light source distribution can be uniform, and has collimated light, can avoid the photomask due to multiple use of contact wear and reduce its replacement rate By.

The mask aligner (Mask Aligner) of the direct exposure semiconductor exposure machine, its main The important parameter is the uniformity of light intensity. The brief description is as follows: The light-emitting image of the microcircuit mask is reflected on the photoresist wafer with the 365 nm exposure machine lens group. After exposure for a period of time, it undergoes multiple processes such as development, baking, etching, and photoresist removal. , Then go to the wiring, packaging and testing of electronic components. Among them, the line width of the microcircuit determines the minimum size specification of the electronic components, which is also the main indicator of the function of the mask aligner as the host.

Current parallel light exposure machines mostly use mercury lamps as light sources, but high-pressure mercury lamps It has a high calorific value, a large volume, and a very short life span, generally only 800 hours, and the high-power mercury lamp has a high cost. At the same time, its mercury content is 35 mg (equivalent to the lethal dose of a rabbit), which not only pollutes the environment, but also has a large volume. , The service life is short, and the scope of application is still limited. According to the Minamata Convention, by 2020, The production and import and export trade of mercury batteries and fluorescent lamps of more than a certain amount are prohibited. Therefore, such mercury lamps are also Will be restricted.

Due to the disadvantages of the above mercury lamp, with the high-power ultraviolet light-emitting diode The emergence of (UVLED), with the advantages of high efficiency, long life and narrow spectrum, is an ideal light source to replace mercury lamps. The UVLED light source is used in the exposure machine, and the two light source indicators that need to be paid attention to are the optical parallelism and the uniformity of the entire lamp.

However, a single UVLED has little energy and can only be used as a collimated light. The mercury lamp has a comparable energy density, and there must be several UVLED light sources arranged in an array to form a UVLED array to have enough energy. However, the current UVLED has a large divergence angle. At the same time, the dot matrix of multiple UVLEDs is a surface light source, and the luminous efficiency of each UVLED is also different. Therefore, due to the large area distribution of the UVLED array light source, the actual light field distribution is uneven. The shortcomings that make it difficult to use energy effectively, even if it is distributed in a superimposed or probabilistic manner, the expected uniformity cannot be achieved. Therefore, general users cannot meet the needs of users in actual use.

The main purpose of the present invention is to overcome the above-mentioned problems encountered by the prior art and to improve An array diode ultraviolet light source device with a high uniformity of collimated light can be provided by using a set of collimated illumination lens group to make the UVLED array light source pass through the lens group, which can make the light source distribution uniform.

The secondary purpose of the present invention is to provide a simple mechanism and can be applied to semiconductor The direct contact or close pitch and indirect exposure light source in the volume lithography process can avoid the high uniformity array diode ultraviolet light source device that reduces the replacement rate of the photomask due to the contact wear of multiple uses.

In order to achieve the above purpose, the present invention is a high uniformity array diode ultraviolet light source device. The system includes: a UVLED array light source, which is composed of several ultraviolet light-emitting diodes (UVLED), The array diode ultraviolet rays can be emitted through the entrance pupil; a collimating illumination lens group is arranged on the side of the UVLED array light source, which includes a front lens group and a rear lens group, and the front lens group and the rear lens group The focal length ratio of the lens group is 1.3±0.1. The array diode ultraviolet light enters from the entrance pupil, and the light intersects at a mask position, so that the light from a single UVLED in different array positions is parallel to each other under the same viewing angle. , The light intensity distribution on the light exit section is uniform, and the light can achieve the collimation function in each field angle; and a substrate is arranged on one side of the mask, and the light is focused on the light through the collimating illumination lens group. After the cover position is mapped on the substrate.

In the above-mentioned embodiment of the present invention, the collimating illumination lens group is composed of a first lens and a second lens. The first lens and the third lens are negative lenses, the second lens and the fourth lens are positive lenses, and the first lens and the second lens are The lens is the front lens group, and its composite focal length is positive, the third lens and the fourth lens are the rear lens group, and its composite focal length is positive.

In the above-mentioned embodiment of the present invention, the collimating illumination lens group is composed of two-sided lenses. For the lens group and the rear lens group, the composite focal length of the front lens group is positive, and the composite focal length of the rear lens group is positive.

In the above embodiment of the present invention, the telecentric deviation of the light at each field angle is less than or equal to 0.3 degrees; the level deviation of the same field angle is less than or equal to 0.3 degrees.

In the above-mentioned embodiment of the present invention, the light intensity of the collimating illumination lens group on the light exit section is The evenness of the distribution is greater than 98%.

In the above-mentioned embodiment of the present invention, it can be applied to the contact type in the semiconductor photolithography process (Less than or equal to 3 microns in line width), soft contact (3 to 30 microns in line width), and short pitch (30 to 200 microns in line width) photolithography process.

In the above-mentioned embodiments of the present invention, it can be applied to direct contact or close spacing, and indirect exposure. The light source.

Please refer to "Figure 1 to Figure 4", which are the high uniformity arrays of the present invention. The schematic diagram of the structure of the diode ultraviolet light source device, the schematic diagram of the output of the simulated light source of the present invention, the schematic cross-sectional view of the first embodiment of the collimating illumination lens group of the present invention, and the schematic cross-sectional view of the second embodiment of the collimating illumination lens group of the present invention. As shown in the figure: the present invention is a high-uniformity array diode ultraviolet light source device, which is composed of a UVLED array light source 1, a collimating illumination lens group 2, and a substrate 5.

The aforementioned UVLED array light source 1 is composed of several ultraviolet light-emitting diodes (UVLED), can emit the ultraviolet light of the array diode through the entrance pupil 11.

The collimating illumination lens group 2 is arranged on the side of the UVLED array light source 1, which includes a The front lens group 21 and a rear lens group 22, and the focal length ratio of the front lens group 21 to the rear lens group 22 is 1.3±0.1, the array diode ultraviolet light enters from the entrance pupil 11, and the light intersects in one The position of the mask 4 makes the light 3 from a single UVLED in different array positions parallel to each other under the same viewing angle, and the light intensity distribution on the light exit section is uniform, and the light 3 achieves the collimation function in each field angle.

The substrate 5 is arranged on one side of the light shield 4, and the light 3 passes through the collimating illumination lens group 2 It is mapped on the substrate 5 after focusing. If so, a brand new high uniformity is formed by the structure disclosed above Array diode ultraviolet light source device.

When used, the ultraviolet light of the array diode can enter from the entrance pupil 11, and the light 3 Pass it at the position of the mask 4, as shown in Figure 1, make the light 3 from a single UVLED in different array positions parallel to each other under the same viewing angle, and the light intensity distribution on the light exit section has a flatness and uniformity greater than 98 %, and make the ray 3 have collimation function at each field angle, and the telecentric deviation of each field angle is less than or equal to 0.3 degrees. The level deviation of the same field angle is less than or equal to 0.3 degrees. The light 3 is focused on the position of the mask 4 through the collimating illumination lens group 2 and then mapped on the substrate 5. The photomask 4 and the substrate 5 can be contact type (line width less than or equal to 3 microns), soft contact type (line width 3 to 30 microns), and short pitch type (line width 30 to 200 microns). Process. As shown in the simulated light source output in Figure 2, it can be used in direct contact or close-spaced, and indirect exposure light sources to avoid contact wear.

The following examples are only examples for understanding the details and connotation of the present invention, but not for limitation The scope of patent application of the present invention.

In the first embodiment, the above-mentioned collimating illumination lens group 2 is composed of a first lens 211 and a Two lenses 212, a third lens 221, and a fourth lens 222 are composed of four-sided lenses, in which the first lens 211 and the third lens 221 are negative lenses, and the second lens 212 and the fourth lens 222 are positive lenses , And the first lens 211 and the second lens 212 have a positive composite focal length of the front lens group 21, the third lens 221 and the fourth lens 222 have a positive composite focal length of the rear lens group 22, and its focal length The ratio is 1.3±0.1, as shown in Figure 3.

In the second embodiment, the above-mentioned collimating illumination lens group 2 is composed of two-sided lenses. The front mirror For group 21 and the rear lens group 22, the composite focal length of the front lens group 21 is positive, and the composite focal length of the rear lens group 22 is positive, and its focal length ratio is 1.3±0.1, as shown in Figure 4.

The traditional UVLED array light source has a large area distribution, and the light field intensity distribution is uneven. The Ming system uses a set of collimated illumination mirror group to make the UVLED array light source pass through the mirror group, which can make the light source distribution uniform and have collimated light. Because this device only includes three units: UVLED array light source, collimating illumination lens group and substrate platform, the mechanism is simple; and it can be applied in semiconductor photolithography process with contact type less than or equal to 3 microns, soft contact type Lithography process with a line width of 3 to 30 microns and a short-pitch line width of 30 to 200 microns. It can reduce the replacement rate of the photomask due to the wear and tear of multiple use.

In summary, the present invention is a high-uniformity array diode ultraviolet light source device, which can Effectively improve the various shortcomings of conventional use. It includes a collimating illumination lens group, which can pass the ultraviolet light of the array diode from the entrance pupil into the person, and the light is passed at the position of the mask, so that the single ultraviolet light emitting diode in each different array position The light of the UVLED is parallel to each other under the same viewing angle, and the uniformity of the light intensity distribution on the light exit section is greater than 98%, and the light can be collimated in each field angle. It can be used in direct contact or close proximity. The spacing and the light source for indirect exposure make the invention more advanced, more practical, and more in line with the needs of users. It has indeed met the requirements of an invention patent application. A patent application is filed in accordance with the law.

However, the above are only the preferred embodiments of the present invention, and should not be limited by this The scope of implementation of the present invention; therefore, all simple equivalent changes and modifications made in accordance with the scope of the patent application of the present invention and the content of the description of the invention should still fall within the scope of the patent of the present invention.

1: UVLED array light source １１: Entrance pupil 2: Collimation lighting lens group 21: Front mirror group 211: The first lens 212: The second lens 22: Rear mirror group Piece 221: The Third Mirror 222: The fourth lens 3: Light 4: Mask 5: Substrate

Figure 1 is a schematic diagram of the structure of the high-uniformity array diode ultraviolet light source device of the present invention. Figure 2 is a schematic diagram of the analog light source output of the present invention. Figure 3 is a schematic cross-sectional view of the first embodiment of the collimating illumination lens assembly of the present invention. Figure 4 is a schematic cross-sectional view of the second embodiment of the collimating illumination lens assembly of the present invention.

1: UVLED array light source

11: Entrance pupil

2: Collimating illumination lens group

21: Front mirror group

211: The first lens

212: second lens

22: Rear mirror group

221: third lens

222: The fourth lens

3: light

4: photomask

5: Substrate

Claims (6)

A high-uniformity array diode ultraviolet light source device includes: a UVLED array light source, which is composed of several ultraviolet light emitting diodes (UVLED), which can emit the ultraviolet light of the array diode through the entrance pupil; The straight illuminating lens group is set on the side of the UVLED array light source. It includes a front lens group and a rear lens group, and the focal length ratio of the front lens group and the rear lens group is 1.3±0.1. The array diode The ultraviolet light enters from the entrance pupil, and the light passes through a mask position, so that the light from a single UVLED in different array positions is parallel to each other under the same viewing angle, and the light intensity distribution on the light exit section is more than 98%. %, and make the light achieve the collimation function in each field angle; and a substrate is arranged on one side of the light cover, and the light is focused on the position of the light cover through the collimating illumination lens group and then mapped on the substrate. According to the high-uniformity array diode ultraviolet light source device described in item 1 of the scope of patent application, the collimating illumination lens group is composed of four-sided lenses such as the first lens, the second lens, the third lens, and the fourth lens. Composition, the first lens and the third lens are negative lenses, the second lens and the fourth lens are positive lenses, and the first lens and the second lens are the front lens group, the composite focal length of which is positive, The third lens and the fourth lens are the rear lens group, and the composite focal length of the rear lens group is positive. According to the high-uniformity array diode ultraviolet light source device described in item 1 of the scope of patent application, the collimating illumination lens group is composed of two lenses, the front lens group and the rear lens group, and the front lens group The composite focal length is positive, and the composite focal length of the rear lens group is positive. According to the high-uniformity array diode ultraviolet light source device described in item 1 of the scope of patent application, wherein the telecentric deviation of the light at each field angle is less than or equal to 0.3 degrees; the same field The level deviation of the angle is less than or equal to 0.3 degrees. The high-uniformity array diode ultraviolet light source device described in the first item of the scope of patent application can be applied to the contact type (less than or equal to 3 micron line width) and soft contact type (3 to 30 micron) in the semiconductor photolithography process Line width), and short-pitch (30 to 200 micron line width) photolithography process. The high-uniformity array diode ultraviolet light source device described in item 1 of the scope of patent application can be used in direct contact or close spacing, and indirect exposure light sources.

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